A pulse capacitor

Abstract

The application provides a pulse capacitor, which comprises a base, a primary device, a transformer, a heat dissipation part, a secondary device, a support capacitor, a connecting frame, a first pouring layer and a second pouring layer, the base is formed with a first pouring compartment, a second pouring compartment and a middle compartment between the first and second pouring compartments, the transformer and the heat dissipation part are arranged in the middle compartment, the primary device is suspended in the first pouring compartment through the connecting frame and the output end of the primary device is connected with the primary of the transformer, the first pouring layer is arranged between the primary device and the first pouring compartment, the secondary device and the support capacitor are suspended in the second pouring compartment through the connecting frame, and the second pouring layer is arranged between the secondary device, the support capacitor and the second pouring compartment. The application has the advantages of modular design, reliable welding, smaller volume, higher structural strength, better mechanical performance, less adverse effect on other components on the circuit board, more application occasions and the like.

Description

Technical Field

[0001] This invention relates to a pulse capacitor. Background Technology

[0002] In fields such as detonation devices, stroboscopic circuits, or lasers, there is a need for devices capable of providing instantaneous super-high currents. Current technology typically achieves this by soldering components onto a circuit board to form a boost circuit. However, this method has drawbacks: inconsistent soldering quality leads to low circuit reliability and mechanical reliability. Furthermore, to save space, more effort is required to design the placement of transformers, capacitors, and other components, often without achieving optimal results, resulting in a still excessively large space requirement for the boost circuit. Moreover, to obtain instantaneous super-high currents, capacitors with larger capacitance values ​​are usually needed. However, capacitors are prone to expansion, breakdown, or explosion when heated or subjected to changes in ambient temperature. This can easily damage other components on the circuit board, leading to even more serious problems. Summary of the Invention

[0003] The purpose of this invention is to propose a pulse capacitor with a modular design, reliable welding, smaller size, higher structural strength, better mechanical properties, less likelihood of adversely affecting other components on the circuit board, and wider applicability.

[0004] This invention is achieved through the following technical solution:

[0005] A pulse capacitor includes a base, a primary device, a transformer, a heat sink, a secondary device, a support capacitor, a connecting frame, a first potting layer, and a second potting layer. The base has a first potting chamber, a second potting chamber, and a central chamber located between the first and second potting chambers. The transformer and the heat sink are both disposed in the central chamber. The primary device is suspended in the first potting chamber via the connecting frame, and its output terminal is connected to the primary winding of the transformer. The first potting layer is disposed between the primary device and the first potting chamber. The secondary device and the support capacitor are both suspended in the second potting chamber via the connecting frame. The second potting layer is disposed between the secondary device, the support capacitor, and the second potting chamber. The input terminal of the secondary device is connected to the secondary winding of the transformer via the connecting frame, and its output terminal is connected to one end of the support capacitor via the connecting frame. The connecting frame has an input pad located at the front end of the base and an output pad located at the rear end of the base. The input pad is connected to the input terminal of the primary device, and the output pad is connected to the support capacitor. In use, the pulse capacitor is fixed as a whole on the circuit board. Users only need to allocate appropriate space for the pulse capacitor when designing the circuit board, greatly reducing the design difficulty. Only the input and output pads require soldering, effectively avoiding adverse consequences due to soldering quality. This invention incorporates a boost module composed of a built-in transformer, support capacitor, and other components. Low-voltage input is converted to high-voltage output by the boost module and used to charge the support capacitor. After charging, the support capacitor releases a massive instantaneous current, ensuring its functionality. This invention achieves the functionality and reliability of the pulse capacitor through a connecting frame, better adapting to high-temperature, high-voltage, and high-overload operating environments and meeting the requirements for capacitor insulation reliability. It facilitates product adaptation and optimizes product size, resulting in a small size and high space utilization. The potting and frame design increases the product's structural strength and improves its mechanical properties, providing strong shock resistance and environmental adaptability. Furthermore, the transformer is placed in the central compartment, isolated from other components to prevent heat transfer, and the transformer is not potted to facilitate heat dissipation. The primary components, secondary components, and support capacitors are arranged in a suspended manner, which can better cope with various impact stresses.

[0006] Furthermore, the primary device includes a first resistor, a second resistor, a first capacitor, a first transistor, and a second transistor. The input pad includes a positive input terminal and a negative input terminal. One end of the first resistor is connected to the positive input terminal, and the other end is connected to one end of the second resistor. The first capacitor is connected between the other end of the second resistor and one end of the primary coil of the transformer. The base of the first transistor is connected between the first and second resistors, the collector is connected to the base of the second transistor, and the emitter is connected to the negative input terminal. The emitter of the second transistor is connected to the positive input terminal, and the collector is connected to one end of the primary coil of the transformer. The other end of the primary coil of the transformer is connected to the negative input terminal.

[0007] Furthermore, the connecting frame also includes a primary section, which comprises two first horizontally spaced sections, a first vertical section extending downward from one end of one of the first horizontally spaced sections, a first resistor mounting section, a second resistor mounting section, and a third resistor mounting section arranged horizontally at intervals, a vertical capacitor mounting section positioned vertically above the third resistor mounting section, a second transistor mounting section connected to the upper end of the vertical capacitor mounting section and extending horizontally at intervals, a first connecting section connected to the upper end of the vertical capacitor mounting section and connected to one end of the transformer primary, a first transistor mounting section, and a section connected to one end of the other first horizontally spaced section and the other end of the transformer primary. The second connecting section has a first resistor positioned between the first resistor mounting section and the second resistor mounting section, a second resistor positioned between the second resistor mounting section and the third resistor mounting section, a first capacitor positioned between the third resistor mounting section and the vertical capacitor mounting section, a second transistor positioned between the second transistor mounting section and the first transistor mounting section, and the second transistor also connected to the first resistor mounting section via the third connecting section, and the first transistor positioned between the first transistor mounting section and the second resistor mounting section, and the first transistor also connected to the second connecting section via the fourth connecting section. The positive and negative input terminals are respectively located at the other ends of the two first horizontal sections. The primary section design is more reasonable, realizing the connection of primary devices while making the overall size of the pulse capacitor smaller.

[0008] Furthermore, the secondary device includes a first diode, a second diode, a Zener diode, a second capacitor, and a third resistor. The output pad includes a positive output terminal and a negative output terminal. The cathode of the first diode is connected to one end of the transformer secondary coil, and the anode is connected to one end of the second capacitor and one end of the third resistor, respectively. The cathode of the second diode is connected to the other end of the third resistor, and the anode is connected to one end of the support capacitor and serves as the positive output terminal. The cathode of the Zener diode is connected between the other end of the third resistor and the cathode of the second diode, and the anode is connected to the other end of the transformer secondary coil, the other end of the second capacitor, and the other end of the support capacitor, respectively, and serves as the negative output terminal.

[0009] Furthermore, the connecting frame also includes a secondary section, which comprises two spaced-apart spanning sections, a first diode mounting section disposed at one end of one spanning section, a vertically arranged integrated mounting section whose upper end is connected to one end of the other spanning section, two chip group mounting sections respectively connected to both ends of the support capacitor, a second diode mounting section connected to one end of one chip group mounting section, and vertically spaced upper and lower resistor mounting sections. The other chip group mounting section is connected to the lower end of the integrated mounting section. The other ends of the two spanning sections are respectively connected to the transformer secondary winding. The first diode is disposed between the first diode mounting section and the upper resistor mounting section; the second capacitor is disposed between the upper resistor mounting section and the upper end of the integrated mounting section; the second diode is disposed between the chip group mounting section and the lower resistor mounting section; the Zener diode is disposed between the lower resistor mounting section and the lower end of the integrated mounting section; and the third resistor is disposed between the upper and lower resistor mounting sections. This secondary section design is more rational, achieving both the connection of secondary devices and reducing the overall size of the pulse capacitor.

[0010] Furthermore, the two spanning sections extend forward and cross the base between the central compartment and the second potting compartment before connecting to the transformer, and the two first transverse horizontal sections extend out of the first potting layer and extend towards the front end of the base.

[0011] Furthermore, the heat dissipation component includes two heat dissipation blocks located on both sides of the transformer. The heat dissipation blocks are rectangular blocks made of aluminum alloy material. The rectangular blocks have horizontally penetrating grids and multiple longitudinally penetrating, spaced-apart through holes, which can quickly dissipate heat from the transformer.

[0012] Furthermore, the bracket capacitor includes a metal bracket and multiple horizontally spaced chip groups. The bracket includes an edge group and a middle group arranged horizontally. The edge group includes two vertically opposite edge frames, which are close to the outer side of the chip group ends located at the edge. The middle group includes two vertically opposite middle frames, which are close to the outer side of the ends of two adjacent chip groups. The lower ends of both the edge frames and the middle frames have horizontal wrapping sections, which are close to the lower side of the corresponding chip group ends. The chip group mounting section is located at the lower end of each wrapping section. The height of both the edge frames and the middle frames is not less than the height of the chip group. This design can reduce the overall height of the pulse capacitor. The wrapping sections are close to the lower side of the chip group ends, which can effectively isolate the impact stress acting on the chip. The segmented design of the bracket can alleviate the local stress caused by uneven thermal matching of the metal material at the ends, thereby mitigating the deformation of the metal material in the length direction at high temperatures.

[0013] Furthermore, both sides of the base have horizontally extending mounting portions, and the mounting portions are provided with multiple mounting holes at intervals, which facilitates the installation of pulse capacitors on the circuit board.

[0014] Furthermore, the base is made of high-temperature resistant insulating plastic material, which can ensure the external strength of the pulse capacitor. Attached Figure Description

[0015] The present invention will now be described in further detail with reference to the accompanying drawings.

[0016] Figure 1 This is the circuit schematic diagram of the present invention.

[0017] Figure 2 This is a schematic diagram of the structure of the present invention.

[0018] Figure 3 This is a schematic diagram of the base of the present invention.

[0019] Figure 4 This is a schematic diagram of the structure of the present invention after removing the base, the first potting layer, and the second potting layer.

[0020] Figure 5 This is another structural diagram of the present invention after removing the base, the first potting layer, and the second potting layer.

[0021] Figure 6 This is a schematic diagram of the primary section of the connecting frame of the present invention.

[0022] Figure 7 This is a schematic diagram of the secondary section of the connecting frame of the present invention.

[0023] Figure 8 This is another structural schematic diagram of the secondary segment of the connecting frame of the present invention.

[0024] Figure 9 This is a schematic diagram of the heat sink component of the present invention.

[0025] Figure 10 This is a schematic diagram of the structure of the support capacitor of the present invention.

[0026] Figure 11 This is another structural schematic diagram of the bracket capacitor of the present invention.

[0027] The components are as follows: 1. Base; 11. First potting chamber; 12. Second potting chamber; 13. Middle chamber; 14. Mounting part; 15. Mounting hole; R1. First resistor; R2. Second resistor; C1. First capacitor; VT1. First transistor; VT2. Second transistor; 3. Transformer; 4. Heat sink; 41. Heat sink block; 42. Grid; 43. Through hole; VD1. First diode; VD2. Second diode; VD3. Zener diode; C2. Second capacitor; R3. Third resistor; 6. Support capacitor; 61. Chip; 611. End; 62. Support; 621. Edge support; 622. Middle support; 623. Wrapping section; 624. First stress hole; 625. Second stress hole; 63. Buffer pad; 7. Connecting frame; 711. Positive input terminal; 712. Negative input terminal. Terminals; 72. Primary segment; 721. First horizontal segment; 722. First vertical segment; 723. First resistor mounting segment; 724. Second resistor mounting segment; 725. Third resistor mounting segment; 726. Vertical capacitor mounting segment; 727. Second transistor mounting segment; 728. First connection segment; 729. Second connection segment; 7210. First transistor mounting segment; 7211. Third connection segment; 7212. Fourth connection segment; 73. Secondary segment; 731. Crossover segment; 732. First diode mounting segment; 733. Integrated mounting segment; 734. Chipset mounting segment; 735. Second diode mounting segment; 736. Upper resistor mounting segment; 737. Lower resistor mounting segment; 741. Positive output terminal; 742. Negative output terminal; 8. First potting layer; 9. Second potting layer. Detailed Implementation

[0028] like Figures 1 to 11As shown, the pulse capacitor includes a base 1, a primary component, a transformer 3, a heat sink 4, a secondary component, a support capacitor 6, a connecting frame 7, a first potting layer 8, and a second potting layer 9. The base 1 is made of high-temperature resistant insulating plastic material and includes a rectangular block and two mounting portions 14 arranged on both sides of the rectangular block and extending horizontally outward. Multiple mounting holes 15 are spaced apart on the mounting portions 14 to facilitate fixing the pulse capacitor to the circuit board. A first potting chamber 11, a second potting chamber 12, and a central chamber 13 located between the first potting chamber 11 and the second potting chamber 12 are formed on the rectangular block of the base 1. Transformer 3 and heat sink 4 are both located in the middle chamber 13. The primary device is suspended in the first potting chamber 11 via the connecting frame 7 and its output end is connected to the primary of transformer 3. The first potting layer 8 is located between the primary device and the first potting chamber 11. The secondary device and the support capacitor 6 are both suspended in the second potting chamber 12 via the connecting frame 7. The second potting layer 9 is located between the secondary device and the support capacitor 6 and the second potting chamber 12. The input end of the secondary device is connected to the secondary of transformer 3 via the connecting frame 7, and the output end is connected to one end of support capacitor 6 via the connecting frame 7. The connecting frame 7 has an input pad located at the front end of the base 1 and an output pad located at the rear end of the base 1. The input pad is connected to the input end of the primary device, and the output pad is connected to support capacitor 6.

[0029] In this embodiment, the primary components include a first resistor R1, a second resistor R2, a first capacitor C1, a first transistor VT1, and a second transistor VT2. The input pads include a positive input terminal 711 and a negative input terminal 712. One end of the first resistor R1 is connected to the positive input terminal 711, and the other end is connected to one end of the second resistor R2. The first capacitor C1 is connected between the other end of the second resistor R2 and one end of the primary coil of the transformer 3. The first transistor VT1 is an NPN transistor, and the second transistor VT2 is a PNP transistor. The base of the first transistor VT1 is connected between the first resistor R1 and the second resistor R2, the collector is connected to the base of the second transistor VT2, and the emitter is connected to the negative input terminal 712. The emitter of the second transistor VT2 is connected to the positive input terminal 711, and the collector is connected to one end of the primary coil of the transformer 3. The other end of the primary coil of the transformer 3 is connected to the negative input terminal 712. The secondary components include a first diode VD1, a second diode VD2, a Zener diode VD3, a second capacitor C2, and a third resistor R3. The output pads include a positive output terminal 742 and a negative output terminal 742. The cathode of the first diode VD1 is connected to one end of the secondary coil of transformer 3, and its anode is connected to one end of the second capacitor C2 and one end of the third resistor R3. The cathode of the second diode VD2 is connected to the other end of the third resistor R3, and its anode is connected to one end of the support capacitor 6, serving as the positive output terminal 742. The cathode of the Zener diode VD3 is connected between the other end of the third resistor R3 and the cathode of the second diode VD2, and its anode is connected to the other end of the secondary coil of transformer 3, the other end of the second capacitor C2, and the other end of the support capacitor 6, serving as the negative output terminal 742.

[0030] The connecting frame 7 also includes a primary section 72 and a secondary section 73. The primary section 72 includes two first horizontal sections 721 spaced apart, a first vertical section 722 extending downward from one end of one of the first horizontal sections, a first resistor mounting section 723 spaced horizontally, a second resistor mounting section 724 and a second resistor mounting section 725 spaced horizontally, a vertical capacitor mounting section 726 spaced vertically above the second resistor mounting section 725, a second transistor mounting section 727 connected to the upper end of the vertical capacitor mounting section 726 and extending horizontally horizontally, a first connecting section 728 connected to the upper end of the vertical capacitor mounting section 726 and connected to one end of the primary winding of the transformer 3, a first transistor mounting section 7210, and a second connecting section 729 connected from one end of the other first horizontal section 721 to the other end of the primary winding of the transformer 3. A first resistor R1 is located at the first resistor... Between mounting section 723 and second resistor mounting section 724, second resistor R2 is located between second resistor mounting section 724 and second resistor mounting section 725, first capacitor C1 is located between second resistor mounting section 725 and vertical capacitor mounting section 726, second transistor VT2 is located between second transistor mounting section 727 and first transistor mounting section 7210, second transistor VT2 is also connected to first resistor mounting section 723 through third connecting section 7211, first transistor VT1 is located between first transistor mounting section 7210 and second resistor mounting section 724, first transistor VT1 is also connected to second connecting section 729 through fourth connecting section 7212, positive input terminal 711 and negative input terminal 712 are respectively located at the other end of the two first horizontal sections 721.

[0031] The secondary segment 73 includes two spanning segments 731 arranged at intervals, a first diode mounting segment 732 disposed at one end of one spanning segment 731, a vertically arranged integrated mounting segment 733 whose upper end is connected to one end of the other spanning segment 731, two chip group mounting segments 734 respectively connected to both ends of the support capacitor 6, a second diode mounting segment 735 connected to one end of one chip group mounting segment 734, and an upper resistor mounting segment 736 and a lower resistor mounting segment 737 arranged vertically at intervals. The other chip group mounting segment 734 is connected to the lower end of the integrated mounting segment 733. The other end of the cross section 731 is connected to the secondary winding of transformer 3. A first diode VD1 is positioned between the first diode mounting section 732 and the upper resistor mounting section 736. A second capacitor C2 is positioned between the upper resistor mounting section 736 and the upper end of the integrated mounting section 733. A second diode VD2 is positioned between a chipset mounting section 734 and the lower resistor mounting section 737. A Zener diode VD3 is positioned between the lower resistor mounting section 737 and the lower end of the integrated mounting section 733. A third resistor R3 is positioned between the upper resistor mounting section 736 and the lower resistor mounting section 737. The cross section 731 extends forward and crosses the base 1 between the middle chamber 13 and the second potting chamber 12 before connecting to transformer 3. Two first horizontal sections 721 extend beyond the first potting layer 8 and extend towards the front end of the base 1. Two chipset mounting sections 734 extend upward beyond the second potting layer 9 and extend backward to the rear end of the base 1. Positive output terminal 742 and negative output terminal 742 are respectively positioned at the ends of the two chipset mounting sections 734 extending to the rear end of the base 1.

[0032] The heat sink 4 includes two heat sink blocks 41 located on both sides of the transformer 3. The heat sink block 41 is a rectangular block made of aluminum alloy material. The rectangular block has a horizontally penetrating grid 42 and a plurality of longitudinally penetrating, spaced through holes 43.

[0033] The bracket capacitor 6 includes a metal bracket 62 and two horizontally spaced chip groups. The bracket 62 is made of metal and includes two horizontally spaced edge groups and a middle group. The edge group includes two vertically opposite edge frames 621, which are close to the outer side of the end 611 of the chip group located at the edge. The middle group includes two vertically opposite middle frames 622, which are close to the outer side of the end 611 of two adjacent chip groups. The lower ends of the edge frames 621 and the middle frames 622 each have a horizontally bent wrapping section 623, which is close to the lower side of the end 611 of the corresponding chip group. Chip group mounting sections 734 are provided at the lower end of each wrapping section 623. The height of the edge frames 621 and the middle frames 622 is the same as the height of the chip group.

[0034] The chipset includes two stacked chips 61, with a buffer pad 63 between them. To meet the capacity requirements, the chips 61 are large-size ceramic capacitor chips.

[0035] Multiple first stress holes 624 are spaced apart on both the edge frame 621 and the middle frame 622. A second stress hole 625 is provided on the middle frame 622 corresponding to the gap between two adjacent chipsets. The area of ​​the second stress hole 625 is larger than that of the first stress hole 624.

[0036] In use, the pulse capacitor is mounted on the circuit board through the mounting holes 15 of the base 1. The parts that need to be soldered are limited to the input pads and the output pads. When designing the circuit board, the user only needs to reserve the space corresponding to the size of the pulse capacitor, which effectively reduces the difficulty of circuit board design and can avoid adverse effects on other components on the circuit board when the capacitor or transformer 3 fails.

[0037] The above description is merely a preferred embodiment of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made in accordance with the scope of the patent application and the contents of the specification of the present invention should still fall within the scope of the patent of the present invention.

Claims

1. A pulse capacitor, characterized in that: The system includes a base, primary components, a transformer, a heat sink, secondary components, a support capacitor, a connecting frame, a first potting layer, and a second potting layer. The base forms a first potting chamber, a second potting chamber, and a central chamber located between the first and second potting chambers. The transformer and heat sink are both housed in the central chamber. The primary components are suspended within the first potting chamber via the connecting frame, and their output terminals are connected to the primary winding of the transformer. The first potting layer is located between the primary components and the first potting chamber. The secondary components and support capacitor are suspended within the second potting chamber via the connecting frame. The second potting layer is located between the secondary components, support capacitor, and the second potting chamber. The input terminals of the secondary components are connected to the secondary winding of the transformer via the connecting frame, and their output terminals are connected to the secondary winding via the connecting frame. The connector is connected to one end of the support capacitor. The connector has an input pad at the front end of the base and an output pad at the rear end of the base. The input pad is connected to the input terminal of the primary device, and the output pad is connected to the support capacitor. The primary device includes a first resistor, a second resistor, a first capacitor, a first transistor, and a second transistor. The input pad includes a positive input terminal and a negative input terminal. One end of the first resistor is connected to the positive input terminal, and the other end is connected to one end of the second resistor. The first capacitor is connected between the other end of the second resistor and one end of the primary coil of the transformer. The base of the first transistor is connected between the first and second resistors, the collector is connected to the base of the second transistor, and the emitter is connected to the negative input terminal. The second transistor emitter... The positive input terminal is connected to the collector, and the other end of the primary coil of the transformer is connected to the negative input terminal. The connecting frame also includes a primary section, which includes two first horizontally spaced sections, a first vertical section extending downward from one end of one of the first horizontally spaced sections, a first resistor mounting section, a second resistor mounting section, and a third resistor mounting section arranged horizontally and longitudinally, a vertical capacitor mounting section positioned above the third resistor mounting section, a second transistor mounting section connected to the upper end of the vertical capacitor mounting section and extending horizontally and longitudinally, a first connecting section connected to the upper end of the vertical capacitor mounting section and connected to one end of the primary winding of the transformer, a first transistor mounting section, and a section connected to the... Another first horizontal segment has a second connection segment at one end to the other end of the transformer primary. A first resistor is set between the first resistor mounting segment and the second resistor mounting segment. A second resistor is set between the second resistor mounting segment and the third resistor mounting segment. A first capacitor is set between the third resistor mounting segment and the vertical capacitor mounting segment. A second transistor is set between the second transistor mounting segment and the first transistor mounting segment. The second transistor is also connected to the first resistor mounting segment through a third connection segment. A first transistor is set between the first transistor mounting segment and the second resistor mounting segment. The first transistor is also connected to the second connection segment through a fourth connection segment. The positive input terminal and the negative input terminal are respectively set at the other end of the two first horizontal segments.

2. A pulse capacitor according to claim 1, characterized in that: The secondary devices include a first diode, a second diode, a Zener diode, a second capacitor, and a third resistor. The output pad includes a positive output terminal and a negative output terminal. The cathode of the first diode is connected to one end of the transformer secondary coil, and the anode is connected to one end of the second capacitor and one end of the third resistor, respectively. The cathode of the second diode is connected to the other end of the third resistor, and the anode is connected to one end of the support capacitor and serves as the positive output terminal. The cathode of the Zener diode is connected between the other end of the third resistor and the cathode of the second diode, and the anode is connected to the other end of the transformer secondary coil, the other end of the second capacitor, and the other end of the support capacitor, respectively, and serves as the negative output terminal.

3. A pulse capacitor according to claim 2, characterized in that: The connecting frame also includes a secondary section, which includes two spanning sections arranged at intervals, a first diode mounting section disposed at one end of one spanning section, a vertically arranged integrated mounting section whose upper end is connected to one end of the other spanning section, two chip group mounting sections respectively connected to both ends of the support capacitor, a second diode mounting section connected to one end of one chip group mounting section, and a vertically spaced upper resistor mounting section and a lower resistor mounting section. The other chip group mounting section is connected to the lower end of the integrated mounting section, and the other ends of the two spanning sections are respectively connected to the secondary winding of the transformer. The first diode is disposed between the first diode mounting section and the upper resistor mounting section, the second capacitor is disposed between the upper resistor mounting section and the upper end of the integrated mounting section, the second diode is disposed between the chip group mounting section and the lower resistor mounting section, the Zener diode is disposed between the lower resistor mounting section and the lower end of the integrated mounting section, and the third resistor is disposed between the upper resistor mounting section and the lower resistor mounting section.

4. A pulse capacitor according to claim 3, characterized in that: The two spanning sections extend forward and cross the base between the middle compartment and the second potting compartment before connecting to the transformer. The two first transverse horizontal sections extend out of the first potting layer and extend towards the front end of the base.

5. A pulse capacitor according to any one of claims 1 to 3, characterized in that: The heat sink includes two heat sinks located on both sides of the transformer. The heat sinks are rectangular blocks made of aluminum alloy and have horizontally penetrating grids and multiple longitudinally penetrating, spaced-apart through holes.

6. A pulse capacitor according to claim 5, characterized in that: The support capacitor includes a metal support and multiple horizontally spaced chip groups. The support includes an edge group and a middle group arranged horizontally. The edge group includes two vertically opposite edge frames that are close to the outer side of the end of the chip group located at the edge. The middle group includes two vertically opposite middle frames that are close to the outer side of the end of two adjacent chip groups. The lower ends of the edge frames and middle frames each have a horizontal wrapping section that is close to the lower side of the end of the corresponding chip group. The chip group mounting section is located at the lower end of each wrapping section. The height of the edge frames and middle frames is not less than the height of the chip group.

7. A pulse capacitor according to any one of claims 1 to 3, characterized in that: Both sides of the base have horizontally extending mounting portions, and multiple mounting holes are spaced apart on the mounting portions.

8. A pulse capacitor according to any one of claims 1 to 3, characterized in that: The base is made of high-temperature resistant insulating plastic material.

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