A method for preparing a patterned platinum-based thin film blade and a hot knife cutter integrated

Abstract

The present invention discloses a method for preparing a patterned platinum-based thin film blade and an integrated hot knife cutter, which relates to the technical field of micro-heaters. The patterned platinum-based thin film blade comprises a silicon nitride substrate, and titanium bonding coatings are symmetrically provided on the bottom and top surfaces of the silicon nitride substrate, and platinum resistor coatings are symmetrically provided on the two titanium bonding coatings. The platinum resistor coatings include a linear resistor coating area and lead coating areas respectively connected to both ends of the linear resistor coating area, and each linear resistor coating area is covered with a silicon dioxide insulating coating. The present invention adopts a template method combined with magnetron sputtering to prepare a patterned platinum-based thin film blade. The integrated hot knife cutter device comprises the patterned platinum-based thin film blade described above, and also comprises a hot knife seat, a pressure plate, a T-shaped slider, a compression spring, a knife holder rod and a heavy-duty connector cold pressing needle. The present invention can improve the heating stability of the patterned platinum-based thin film blade and ensure the cutting effect of the blade.

Description

Technical Field

[0001] The invention relates to the technical field of micro heaters, and in particular to a method for preparing a patterned platinum-based thin film blade and an integrated hot knife cutter. Background Art

[0002] The switch release mechanism is a device that provides compression constraints for spacecraft components and releases the constraints according to instructions. It is a mechanical device used to achieve a firm connection between the main body and accessories or between components during spacecraft launch, and release the constraints according to regulations after entering orbit. It is one of the most critical mechanisms to ensure the safety and reliability of satellites, and one of the important factors affecting the reliability of the entire spacecraft. Therefore, a reusable flexible deployment device for spacecraft is studied as a controlled unlocking device. The device has the advantages of repeated use and the characteristics of small separation force and no impact when unlocking the controlled device, and is pollution-free. At the same time, it uses double-blade unlocking, which has a higher fault tolerance rate and can effectively ensure the launch mission of spacecraft such as micro-satellites. This reusable flexible deployment device for spacecraft can enhance the safe and reliable launch of satellites and reduce costs.

[0003] In recent years, metal film resistor units coated with circuit patterns have been widely used to prepare hot knife core electric heating components. Platinum film is widely used in micro-heaters such as hot knives due to its stable resistance temperature coefficient, ability to withstand large current density, and high melting point. At present, a platinum-based thin film electric heating blade is made by setting a platinum coating on a ceramic substrate such as silicon nitride. Due to the poor adhesion of platinum to ceramic substrates such as silicon nitride, the heating stability of the platinum-based thin film electric heating blade deteriorates after repeated heating and use, affecting the cutting effect of the blade. Therefore, how to design and prepare a platinum-based thin film electric heating blade structure with good heating stability is a technical problem that we urgently need to solve. Summary of the invention

[0004] The purpose of the present invention is to provide a method for preparing a patterned platinum-based thin film blade and an integrated hot knife cutter to solve the problems existing in the above-mentioned prior art, thereby improving the heating stability of the patterned platinum-based thin film blade and ensuring the cutting effect of the blade.

[0005] To achieve the above object, the present invention provides the following solutions:

[0006] The present invention provides a patterned platinum-based thin film blade, comprising a silicon nitride substrate, wherein titanium bonding coatings are symmetrically provided on the bottom surface and the top surface of the silicon nitride substrate, platinum resistance coatings are symmetrically provided on the two titanium bonding coatings, the platinum resistance coatings comprise a linear resistance coating area and lead coating areas respectively connected to both ends of the linear resistance coating area, and each of the linear resistance coating areas is covered with a silicon dioxide insulating coating.

[0007] Preferably, the titanium bonding coating includes a linear bonding coating area and a lead bonding coating area respectively connected to both ends of the linear bonding coating area, the linear resistance coating area is arranged on the linear bonding coating area and the two completely overlap, and the lead coating area is arranged on the lead bonding coating area and the two completely overlap.

[0008] Preferably, the thickness of the titanium bonding coating is 100-3000 nm, the thickness of the platinum resistance coating is 20-200 nm, and the thickness of the silicon dioxide insulating coating is 200-400 nm.

[0009] The present invention also provides a method for preparing the patterned platinum-based thin film blade described above, comprising the following steps:

[0010] A titanium bonding coating is symmetrically prepared on the bottom and top surfaces of a silicon nitride substrate by a first hollow template using a physical vapor deposition method; the hollow pattern of the first hollow template is the same as the shape of the titanium bonding coating;

[0011] A symmetrical platinum resistance coating is prepared on two titanium bonding coatings by a second hollow template using a physical vapor deposition method; the hollow pattern of the second hollow template is the same as the shape of the platinum resistance coating;

[0012] A symmetrical silicon dioxide insulating coating is prepared on the linear resistance coating area of ​​two platinum resistance coatings through a third hollow template by a physical vapor deposition method; the hollow pattern of the third hollow template is the same as the shape of the linear resistance coating area.

[0013] Preferably, the target material for preparing the titanium bonding coating is a Ti target, and the working parameters for preparing the titanium bonding coating include: an argon gas flow rate of 40 sccm, an argon plasma working pressure of 0.65 Pa, a deposition temperature of 150°C, a Ti target power of 390 W, and a deposition time of 7 to 200 min;

[0014] The target material for preparing the platinum resistance coating is a Pt target, and the working parameters for preparing the platinum resistance coating include: an argon gas flow rate of 40 sccm, an argon plasma working pressure of 0.65 Pa, a deposition temperature of 150° C., a Pt target power of 280 W, and a deposition time of 2 to 20 min;

[0015] The target material for preparing the silicon dioxide insulating coating is a SiO2 target, and the working parameters for preparing the silicon dioxide insulating coating include: an argon gas flow rate of 40 sccm, an argon plasma working pressure of 0.65 Pa, a deposition temperature of 150°C, a SiO2 target power of 200W, and a deposition time of 40 to 80 minutes.

[0016] Preferably, the surface roughness of the silicon nitride substrate is less than 10 nm.

[0017] The present invention also provides a hot knife cutter integrated device, comprising the patterned platinum-based film blade described above, and also comprising a hot knife seat, a pressure plate, a T-shaped slide block, a compression spring, a knife holder rod and a heavy-duty connector cold pressing pin;

[0018] The pressure plate is fixedly connected to one end of the hot knife seat, one end of the pressure plate extends into the hot knife seat, and the other end is fixedly connected to a pre-tightened rope for a fastening component. One end of the T-shaped head of the T-shaped slider is slidably arranged in the pressure plate, and the other end passes through the hot knife seat in a direction away from the pressure plate. The compression spring is arranged in the hot knife seat and sleeved outside the T-shaped slider. The two ends of the compression spring are respectively in contact with the inner bottom surface of the hot knife seat and the T-shaped head of the T-shaped slider. Two tool holder rods are fixedly installed in the T-shaped slider, and one end of the two tool holder rods close to the pressure plate extends out of the T-shaped slider. The block is fixedly connected to the patterned platinum-based film blade, and the two tool holder rods are respectively conductively connected to the lead plating areas at both ends, the patterned platinum-based film blade and the rope are cross-distributed and abutted against each other, under the action of the pre-tightened rope, the patterned platinum-based film blade is flush with the end surface of the pressure plate, and the compression spring is in a compressed state, the other ends of the two tool holder rods extend out of the T-shaped slider and are respectively fixedly connected to the two heavy-load connector cold-pressing pins, the two heavy-load connector cold-pressing pins are respectively connected with external wires, and the two external wires are respectively used to connect the two poles of the power supply.

[0019] Preferably, an open groove is provided at the end of the tool holder rod, the patterned platinum-based film blade is inserted into the open groove and pressed into the open groove by screws and nuts, and the two side surfaces of the same open groove are respectively in conductive contact with the two lead plating areas at the same end.

[0020] Preferably, a first fixing plate and a second fixing plate are respectively provided on both sides of the heavy-loaded connector cold-pressed needle, and the first fixing plate and the second fixing plate are fastened together by screws and nuts. The first fixing plate and the second fixing plate press the heavy-loaded connector cold-pressed needle to the tool holder rod and press the heavy-loaded connector cold-pressed needle to the external wire.

[0021] Preferably, the surface of the cold pressing pin of the heavy-duty connector is gold-plated, the pressure plate is solid-lubricated after anodizing, the hot knife seat is anodized, the T-shaped slider and the compression spring are solid-lubricated, and the hot knife seat is insulated from various components of the conductive circuit.

[0022] Compared with the prior art, the present invention has achieved the following technical effects:

[0023] The patterned platinum-based thin film blade, its preparation method and hot knife cutter integrated device provided by the present invention provide a titanium bonding coating on a silicon nitride substrate, and a platinum resistor coating on the titanium bonding coating, and improve the adhesion between the platinum resistor coating and the silicon nitride substrate through the titanium bonding coating, thereby improving the heating stability of the patterned platinum-based thin film blade and ensuring the cutting effect of the blade. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 It is a schematic diagram of the patterned platinum-based resistor film by vapor deposition using the template method in the present invention;

[0026] Figure 2 Schematic diagram of double-sided high-temperature patterned platinum-based resistor film by magnetron sputtering vapor deposition in the present invention;

[0027] Figure 3 Four structural schematic diagrams of hollow templates for patterning platinum-based resistor films in the present invention;

[0028] Figure 4 A top view of a patterned platinum resistor coating on a silicon nitride substrate in the present invention;

[0029] Figure 5 This is a scanning electron microscope image of the patterned platinum-based thin film blade of the present invention;

[0030] Figure 6 It is a schematic diagram of the connection structure between the patterned platinum-based film blade and the blade holder rod in the present invention;

[0031] Figure 7 It is a schematic diagram of the structure of the hot knife cutter integrated device in the present invention;

[0032] Figure 8 A side view of the hot knife cutter integrated device of the present invention;

[0033] Fig. 9 for Figure 8 Middle AA section view;

[0034] Fig.10 for Figure 8 Middle BB section view;

[0035] Fig.11 The FESEM and XRD spectra of the platinum-based film corresponding to the patterned shape (I) in the present invention;

[0036] Fig.12 The heating temperature curve of the patterned platinum-based thin film blade corresponding to the patterned shape (I) in the present invention;

[0037] Fig.13 The heating temperature curve of the patterned platinum-based thin film blade corresponding to the patterned shape (II) in the present invention;

[0038] Fig.14 The heating temperature curve of the patterned platinum-based thin film blade corresponding to the patterned shape (III) in the present invention;

[0039] Fig.15 The heating temperature curve of the patterned platinum-based thin film blade corresponding to the patterned shape (IV) in the present invention;

[0040] Fig.16 The graph of the life of the patterned platinum-based thin film blade when heated by electricity corresponding to the patterned shape (I) in the present invention;

[0041] Fig.17 The cyclic power-on heating life curve of the patterned platinum-based thin film blade corresponding to the patterned shape (I) in the present invention;

[0042] Fig.18 This is a curve diagram of the voltage biasing and heating of the patterned platinum-based thin film blade corresponding to the patterned shape (I) in the present invention.

[0043] In the figure: 100-patterned platinum-based film blade, 200-hot knife cutter integrated device, 1-silicon nitride substrate, 2-titanium bonding coating, 3-platinum resistor coating, 301-linear resistor coating area, 302-lead coating area, 4-silicon dioxide insulation coating, 5-hot knife seat, 6-pressure plate, 7-T-shaped slider, 8-compression spring, 9-knife holder rod, 901-open slot, 10-heavy-load connector cold pressing needle, 11-rope, 12-external wire, 13-first fixing plate, 14-second fixing plate. DETAILED DESCRIPTION

[0044] like Figure 1-Figure 5 As shown, the present invention provides a patterned platinum-based thin film blade 100, including a silicon nitride substrate 1, titanium bonding coatings 2 are symmetrically provided on the bottom and top surfaces of the silicon nitride substrate 1, platinum resistance coatings 3 are symmetrically provided on the two titanium bonding coatings 2, the platinum resistance coatings 3 include linear resistance coating areas 301 and lead coating areas 302 respectively connected to both ends of the linear resistance coating areas 301, and each linear resistance coating area 301 is covered with a silicon dioxide insulating coating 4.

[0045] In the present invention, the titanium bonding coating 2 includes a linear bonding coating area and lead bonding coating areas respectively connected to both ends of the linear bonding coating area, the linear resistance coating area 301 is arranged on the linear bonding coating area and the two are completely overlapped, and the lead coating area 302 is arranged on the lead bonding coating area and the two are completely overlapped.

[0046] In a specific embodiment of the present invention, the thickness of the titanium bonding coating 2 is preferably 100 to 3000 nm, and is preferably 100 nm, 800 nm, 1500 nm or 3000 nm. The thickness of the platinum resistance coating 3 is preferably 20 to 200 nm, and is preferably 200 nm, 150 nm, 100 nm or 20 nm. The thickness of the silicon dioxide insulating coating 4 is preferably 200 to 400 nm, and is preferably 200 nm, 250 nm, 300 nm or 400 nm.

[0047] like Figure 2 The schematic diagram of the preparation of the patterned platinum-based thin film blade 100 is shown. Figure 2 It only shows the order of deposition of each coating layer, and does not limit the patterned shape of each coating layer. The present invention preferably adopts a template method combined with magnetron sputtering to prepare a patterned platinum-based thin film blade 100.

[0048] The present invention provides a method for preparing the patterned platinum-based thin film blade 100 described above, comprising the following steps:

[0049] A titanium bonding coating 2 is symmetrically prepared on the bottom and top surfaces of a silicon nitride substrate 1 by a first hollow template using a physical vapor deposition method; the hollow pattern of the first hollow template is the same as the shape of the titanium bonding coating 2;

[0050] A symmetrical platinum resistance coating 3 is prepared on two titanium bonding coatings 2 by a second hollow template using a physical vapor deposition method; the hollow pattern of the second hollow template is the same as the shape of the platinum resistance coating 3;

[0051] A symmetrical silicon dioxide insulating coating 4 is prepared on the linear resistor coating areas 301 of the two platinum resistor coatings 3 by a third hollow template using a physical vapor deposition method; the hollow pattern of the third hollow template has the same shape as the linear resistor coating area 301 .

[0052] In the present invention, the specific implementation method of the physical vapor deposition is preferably magnetron sputtering deposition. In a specific embodiment of the present invention, the present invention preferably prepares a titanium bonding coating 2, a platinum resistance coating 3 and a silicon dioxide insulating coating 4 in sequence on the bottom surface or the top surface of the silicon nitride substrate 1, and then prepares a titanium bonding coating 2, a platinum resistance coating 3 and a silicon dioxide insulating coating 4 in sequence on the other symmetrical side of the silicon nitride substrate 1. The material of the first hollow template, the second hollow template and the third hollow template is preferably stainless steel. Among them, the first hollow template, the second hollow template and the third hollow template can use the same hollow template, so that the titanium bonding coating 2 and the platinum resistance coating 3 are completely overlapped, and when the silicon dioxide insulating coating 4 is deposited, the lower part of the hollow area of ​​the hollow template (i.e. Figure 3 The silicon dioxide insulating coating 4 is thus only deposited on the linear resistance coating area 301 of the platinum resistance coating 3.

[0053] In the present invention, the target material for preparing the titanium bonding coating 2 is preferably a Ti target, and the purity of the Ti target is preferably 99.99%. The diameter of the Ti target is preferably 75 mm. The working parameters of the magnetron sputtering for preparing the titanium bonding coating 2 preferably include: the argon gas flow rate is preferably 40 sccm, the argon plasma working pressure is preferably 0.65 Pa, the deposition temperature is preferably 150°C, the Ti target power is preferably 390 W, and the deposition time is preferably 7 to 200 min, specifically preferably 7 min, 53 min, 100 min or 200 min. In the present invention, when the deposition time is preferably 7 min, the thickness of the titanium bonding coating 2 is 100 nm. When the deposition time is preferably 53 min, the thickness of the titanium bonding coating 2 is 800 nm. When the deposition time is preferably 100 min, the thickness of the titanium bonding coating 2 is 1500 nm. When the deposition time is preferably 200 min, the thickness of the titanium bonding coating 2 is 3000 nm.

[0054] In the present invention, the target material for preparing the platinum resistance coating 3 is preferably a Pt target, and the purity of the Pt target is preferably 99.99%. The diameter of the Pt target is preferably 75 mm. The working parameters of the magnetron sputtering for preparing the platinum resistance coating 3 preferably include: the argon gas flow rate is preferably 40 sccm, the argon plasma working pressure is preferably 0.65 Pa, the deposition temperature is preferably 150 ° C, the Pt target power is preferably 280 W, and the deposition time is preferably 2 to 20 min, specifically preferably 2 min, 10 min, 15 min or 20 min. In the present invention, when the deposition time is preferably 2 min, the thickness of the platinum resistance coating 3 is 20 nm. When the deposition time is preferably 10 min, the thickness of the platinum resistance coating 3 is 100 nm. When the deposition time is preferably 15 min, the thickness of the platinum resistance coating 3 is 150 nm. When the deposition time is preferably 20 min, the thickness of the platinum resistance coating 3 is 200 nm.

[0055] In the present invention, the target material for preparing the silicon dioxide insulating coating 4 is preferably a SiO2 target, and the purity of the SiO2 target is preferably 99.99%. The diameter of the SiO2 target is preferably 75mm. The working parameters of the magnetron sputtering for preparing the silicon dioxide insulating coating 4 preferably include: the argon gas flow rate is preferably 40sccm, the argon plasma working pressure is preferably 0.65Pa, the deposition temperature is preferably 150°C, the SiO2 target power is preferably 200W, and the deposition time is preferably 40 to 80min, specifically preferably 40min, 50min, 60min or 80min. In the present invention, when the deposition time is preferably 40min, the thickness of the silicon dioxide insulating coating 4 is 200nm. When the deposition time is preferably 50min, the thickness of the silicon dioxide insulating coating 4 is 250nm. When the deposition time is preferably 60min, the thickness of the silicon dioxide insulating coating 4 is 300nm. When the deposition time is preferably 80min, the thickness of the silicon dioxide insulating coating 4 is 400nm.

[0056] In a specific embodiment of the present invention, the present invention preferably uses a magnetron sputtering device to prepare the patterned platinum-based thin film blade 100. The magnetron sputtering device preferably includes three independently controllable magnetron target sputtering sources. The present invention preferably installs a Ti target, a Pt target and a SiO2 target on the three independently controllable magnetron target sputtering sources of the magnetron sputtering device. Before preparing the titanium bonding coating 2 on the bottom and top surfaces of the silicon nitride substrate 1, the present invention preferably performs a pre-treatment on the silicon nitride substrate 1; the pre-treatment preferably includes: etching the bottom and top surfaces of the silicon nitride substrate 1 with argon plasma. The bias voltage of the argon plasma used for the etching is preferably -500V; and the etching time is preferably 10min. The present invention preferably removes the natural oxide layer and the impurity contamination layer on the bottom and top surfaces of the silicon nitride substrate 1 by pre-treatment.

[0057] In the present invention, the resistance value of the linear resistor plating area 301 is regulated by regulating the line width, line length and plating thickness of the linear resistor plating area 301 .

[0058] In the present invention, in order to ensure the working stability of the patterned platinum-based thin film blade 100, the surface roughness of the silicon nitride substrate 1 is less than 10 nm.

[0059] like Figure 6-Figure 10 As shown, a hot knife cutter integrated device 200 including the patterned platinum-based film blade 100 described above, further comprising a hot knife seat 5, a pressure plate 6, a T-shaped slide block 7, a compression spring 8, a knife holder rod 9 and a heavy-duty connector cold pressing needle 10;

[0060] The pressure plate 6 is fixedly connected to one end of the hot knife seat 5, one end of the pressure plate 6 extends into the hot knife seat 5, and the other end is fixedly connected to a pre-tightened rope 11 for fastening components. One end of the T-shaped head of the T-shaped slider 7 is slidably set in the pressure plate 6, and the other end passes through the hot knife seat 5 in a direction away from the pressure plate 6. The compression spring 8 is set in the hot knife seat 5 and sleeved on the outside of the T-shaped slider 7. The two ends of the compression spring 8 are respectively in contact with the inner bottom surface of the hot knife seat 5 and the T-shaped head of the T-shaped slider 7. Two tool holder rods 9 are fixedly installed in the T-shaped slider 7. One end of the two tool holder rods 9 close to the pressure plate 6 extends out of the T-shaped slider 7 and contacts the patterned platinum-based film The blade 100 is fixedly connected, and the two tool holder rods 9 are conductively connected to the lead plating areas 302 at both ends respectively. The patterned platinum-based film blade 100 and the rope 11 are cross-distributed and abutted against each other. Under the action of the pre-tightened rope 11, the patterned platinum-based film blade 100 is flush with the end surface of the pressure plate 6, and the compression spring 8 is in a compressed state. The other ends of the two tool holder rods 9 extend out of the T-shaped slider 7 and are fixedly connected to the two heavy-loaded connector cold-pressing needles 10 respectively. The two heavy-loaded connector cold-pressing needles 10 are respectively connected to external wires 12, and the two external wires 12 are respectively used to connect the two poles of the power supply.

[0061] In a specific embodiment of the present invention, the rope 11 is a Kevlar rope or a Dyneema rope, and the pre-tightening force of the Kevlar rope is adjustable to 500-5000N according to the diameter.

[0062] In a specific embodiment of the present invention, an open slot 901 is provided at the end of the tool holder rod 9, and the patterned platinum-based film blade 100 is inserted into the open slot 901 and pressed into the open slot 901 by means of a screw (M1 screw) and a nut. Two through holes are punched on the patterned platinum-based film blade 100 by laser, and the M1 screw passes through the hole on the side wall of the opening slot 901 and the through hole on the patterned platinum-based film blade 100 and is connected to the nut to press the patterned platinum-based film blade 100 into the opening slot 901. The two side surfaces of the same opening slot 901 are respectively in conductive contact with the two lead plating areas 302 at the same end.

[0063] In a specific embodiment of the present invention, a first fixing plate 13 and a second fixing plate 14 are respectively provided on both sides of the heavy-duty connector cold-pressed needle 10, and the first fixing plate 13 and the second fixing plate 14 are fastened together by screws and nuts. The first fixing plate 13 and the second fixing plate 14 press the heavy-duty connector cold-pressed needle 10 and the tool holder rod 9 together, and press the heavy-duty connector cold-pressed needle 10 and the external wire 12 together.

[0064] In a specific embodiment of the present invention, the surface of the cold pressing pin 10 of the heavy-duty connector is gold-plated, the pressure plate 6 is solid-lubricated after anodizing, the hot knife seat 5 is anodized, the T-shaped slider 7 and the compression spring 8 are solid-lubricated, and the hot knife seat 5 is insulated from the components of the conductive circuit, with good insulation performance and a resistance of up to tens of megohms.

[0065] The hot knife cutter integrated device provided by the present invention realizes the assembly and integration of hot knife cutting devices through the dimensional chain control of key components.

[0066] In the reusable hot knife cutter integrated device provided by the present invention, the patterned platinum-based film blade 100 is fixed in the open groove 901 of the tool holder rod 9 by M1 screws and M1 nuts, and the tool holder rod 9 is installed on the T-shaped slider 7 by clearance fit.

[0067] In the reusable hot knife cutter integrated device provided by the present invention, the large end of the T-shaped slider 7 (one end of the T-shaped head) is clearance-matched with the pressure plate 6, and the pressure plate 6 is mechanically fixed to the hot knife seat 5 by M2.5 screws.

[0068] In the reusable hot knife cutter integrated device provided by the present invention, the compression spring 8 cooperates with the T-shaped slider 7 and makes the patterned platinum-based film blade 100 flush with the end surface of the pressure plate 6 through the pre-tightened rope 11, and is compressed to a certain distance inside the hot knife seat 5 together with the T-shaped slider 7 and the knife holder rod 9, and maintains a certain pushing action effect under the action of the elastic force of the compression spring 8.

[0069] In the reusable hot knife cutter integrated device provided by the present invention, the other end of the knife holder rod 9 is connected to the heavy-duty connector cold pressing pin 10, the heavy-duty connector cold pressing pin 10 and the external wire 12 are connected by a pit-pressing crimping method, and the external wire 12 is externally connected to a power supply to stabilize the power supply.

[0070] In the reusable hot knife cutter integrated device provided by the present invention, the spring of the heavy-duty connector cold-pressed needle 10 contacts the raised portion of the second fixing plate 14, and the reverse side of the spring of the heavy-duty connector cold-pressed needle 10 contacts the groove of the first fixing plate 13. The first fixing plate 13 and the second fixing plate 14 mechanically connect the heavy-duty connector cold-pressed needle 10 and the tool holder rod 9 through M2 screws and M2 nuts.

[0071] In the above reusable hot knife cutter integrated device, after the external wire 12 is powered on, the rope 11 is cut off under the high temperature of the end surface of the patterned platinum-based film blade 100 and the elastic force of the compression spring 8. The patterned platinum-based film blade 100 and the T-shaped slider 7 move forward under the elastic force of the compression spring 8 to cut the rope 11 used for fastening components.

[0072] The above-mentioned hot knife cutter integrated device 200 weighs no more than 60g, can be powered on repeatedly, and can be used in the atmosphere or in a vacuum condition, and has a longer service life in a vacuum condition.

[0073] The hot knife cutter integrated device 200 is used in conjunction with mechanical connections at multiple locations, and has the characteristics of high output temperature, large preload force, high connection strength, stable and reliable connection quality, simple operation, no pollution, small separation force, no impact, and light overall weight. The patterned platinum-based film blade 100 is reusable, highly operable, cost-effective, and stable in performance. If two sets of patterned platinum-based film blades 100 are equipped at the same time, the fault tolerance rate can be improved, and it can be applied to the flexible release mechanism when large and small satellites are deployed.

[0074] Physical properties: The surface morphology and structure of the patterned platinum-based resistor film on the blade were observed using a FESEM field emission scanning electron microscope to evaluate the film density characteristics. The crystal structure of the patterned platinum-based resistor film was tested using an X-ray diffraction spectrum to evaluate the crystallinity of the patterned platinum-based resistor film. The resistance value of the patterned film blade was tested using a DC low resistance tester. The heating temperature of the patterned film blade was tested using an infrared thermal imager.

[0075] For the platinum-based resistor film deposited on the patterned platinum-based film blade, the FESEM image of the film shows that the platinum-based film particles are evenly distributed and the film is relatively dense. The XRD spectrum shows that the film is a platinum (111) crystal type. The FESEM and XRD data are as follows Fig.11 shown.

[0076] For patterned platinum-based thin film blades with different patterned structures, the resistance value test results show that the film can be adjusted to the required resistance value by combining the line width and line length of the patterned linear resistor plating area with the film thickness design, and the actual tested resistance value is not much different from the theoretical calculation result. According to the data listed in Table 1, it can be seen that under the same resistance value and line width, the larger the film line length, the larger the required film thickness. At the same time, according to calculations, under the same resistance value and line length, the larger the film line width, the smaller the required film thickness.

[0077] Table 1 Linear design of patterned linear resistor plating area, platinum layer thickness, design and actual resistance value

[0078] Line Type Line width mm Line length mm Film thickness nm Design resistor Actual resistance (one) 2.0 4 20 20Ω 20±2Ω (two) 1.0 10 100 20Ω 20±2Ω (three) 1.0 15 150 20Ω 20±2Ω (Four) 1.0 20 200 20Ω 20±2Ω

[0079] For thin film blades with different pattern structures, when the actual resistance value of the blade is within the range of 20±2Ω, the infrared thermal imaging test results show that when the blade is heated at a constant voltage of 28V, the maximum heating temperature rises to above 850℃ within 15 seconds, and within 60 seconds of power-on, the maximum temperature of the blade is above 1000℃. Figures 12 to 15 As shown, as the length of the blade patterning line increases, the blade heating temperature increases from 1020°C to 1060°C, 1120°C and 1130°C.

[0080] Taking the patterned shape (I) structure as an example, the patterned platinum-based film blade can work continuously for more than 300 seconds under the 28V constant voltage power-on mode, and the maximum temperature is maintained above 1000℃ within 300 seconds. Fig.16 As shown in the figure, the number of cycles used is as follows: Fig.17 As shown in the figure, the number of times the patterned platinum-based film blade is powered on is >20 times, the maximum heating temperature within 10 times is >1000℃, and the maximum heating temperature within 20 times is >950℃. Fig.18 As shown, the patterned platinum-based thin film blade can meet the heating temperature requirement of rising to above 850°C within 15 seconds when the power-on voltage is 24V, 26V, 28V, 30V and 32V, that is, the patterned platinum-based thin film blade can work normally in the 24-32V range.

[0081] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0082] Example 1

[0083] Physical vapor deposition equipment: A magnetron sputtering equipment, consisting of 3 independently controllable magnetron target sputtering sources, on which Ti target, Pt target and SiO2 target are installed respectively. The purity of Ti target is 99.99%, the purity of Pt target is 99.99%, and the purity of SiO2 target is 99.99%. The diameter of the three targets is 75mm. Before depositing the coating, the Si3N4 substrate is etched with argon plasma with a bias voltage of -500V for 10 minutes to remove the natural oxide layer and impurity contamination layer on the substrate surface.

[0084] Physical vapor deposition process: First, select a hollow stainless steel template with patterned shape (I) and deposit a Ti bonding layer on the Si3N4 substrate: the argon flow rate is 40sccm, the argon plasma working pressure is 0.65Pa, the deposition temperature is 150℃, the titanium target power is 390W, and the deposition time is 7min; the thickness of the Ti bonding is about 100nm. Then, deposit a Pt resistance layer on the Ti bonding layer: the argon flow rate is 40sccm, the plasma working pressure is 0.65Pa, the deposition temperature is 150℃, the Pt target power is 280W, the deposition time is 2min, and the thickness of the Pt layer is about 20nm. Finally, deposit a SiO2 layer on the Pt layer in the patterned linear resistance area: the argon flow rate is 40sccm, the plasma working pressure is 0.65Pa, the deposition temperature is 150℃, the SiO2 target power is 200W, the deposition time is 40min, and the thickness of the SiO2 layer is about 200nm. According to the above process, a Ti bonding layer, a Pt resistance layer and a SiO2 insulation layer with the same parameters are deposited on the reverse side of the Si3N4 substrate, and finally a patterned platinum-based resistance film with a thickness of about 320 nm is obtained on the Si3N4 substrate.

[0085] Electrical heating performance: Performance of patterned film blades based on patterned shape (a): Fig.12 As shown, when the patterned platinum-based film blade is powered on in 28V DC constant voltage mode for 60s, the heating temperature rises to 905°C after 15 seconds of power-on, and the maximum heating temperature rises to 1031°C within 60 seconds of power-on.

[0086] Example 2

[0087] Physical vapor deposition equipment: same as in Example 1.

[0088] Physical vapor deposition process: Same as Example 1, except that a hollow stainless steel template of patterned shape (II) is used in the coating process, the Ti bonding layer deposition time is 53 min, corresponding to a Ti bonding layer thickness of about 800 nm, the Pt resistance layer deposition time is 10 min, corresponding to a Pt resistance layer thickness of about 100 nm, and the SiO2 insulation layer deposition time is 50 min, corresponding to a SiO2 insulation layer thickness of about 250 nm. According to the above process, a Ti bonding layer, a Pt resistance layer, and a SiO2 insulation layer with the same parameters are deposited on the reverse side of the Si3N4 substrate. Finally, a patterned platinum-based resistance film with a thickness of about 1150 nm is obtained on the Si3N4 substrate.

[0089] Electrical heating performance: Performance of patterned film blades based on patterned shape (ii): Fig.13 As shown, when the patterned platinum-based film blade is powered on for 60 seconds in 28V DC constant voltage mode, the heating temperature rises to 1031°C after 15 seconds of power-on, and the maximum heating temperature rises to 1068°C within 60 seconds of power-on.

[0090] Example 3

[0091] Physical vapor deposition equipment: same as in Example 1.

[0092] Physical vapor deposition process: Same as Example 1, except that a hollow stainless steel template of patterned shape (three) is used in the coating process, the Ti bonding layer deposition time is 100 min, corresponding to a Ti bonding layer thickness of about 1500 nm, the Pt resistance layer deposition time is 15 min, corresponding to a Pt resistance layer thickness of about 150 nm, and the SiO2 insulation layer deposition time is 60 min, corresponding to a SiO2 insulation layer thickness of about 300 nm. According to the above process, a Ti bonding layer, a Pt resistance layer, and a SiO2 insulation layer with the same parameters are deposited on the reverse side of the Si3N4 substrate. Finally, a patterned platinum-based resistance film with a thickness of about 1950 nm is obtained on the Si3N4 substrate.

[0093] Electrical heating performance: Performance of patterned film blades based on patterned shape (iii): Fig.14 As shown, when the patterned platinum-based film blade is powered on in 28V DC constant voltage mode for 60s, the heating temperature rises to 1120°C within 15 seconds of power-on, and the maximum heating temperature rises to 1130°C within 60 seconds of power-on.

[0094] Example 4

[0095] Physical vapor deposition equipment: same as in Example 1.

[0096] Physical vapor deposition process: Same as Example 1, except that a hollow stainless steel template of patterned shape (four) is used in the coating process, the Ti bonding layer deposition time is 200 min, corresponding to a Ti bonding layer thickness of about 3000 nm, the Pt resistance layer deposition time is 20 min, corresponding to a Pt resistance layer thickness of about 200 nm, and the SiO2 insulation layer deposition time is 80 min, corresponding to a SiO2 insulation layer thickness of about 400 nm. According to the above process, a Ti bonding layer, a Pt resistance layer, and a SiO2 insulation layer with the same parameters are deposited on the reverse side of the Si3N4 substrate. Finally, a patterned platinum-based resistance film with a thickness of about 3600 nm is obtained on the Si3N4 substrate.

[0097] Electrical heating performance: Performance of patterned film blades based on patterned shape (IV): Fig.15 As shown, when the patterned platinum-based film blade is powered on for 60 seconds in 28V DC constant voltage mode, the heating temperature rises to 1121°C after 15 seconds of power-on, and the maximum heating temperature rises to 1136°C within 60 seconds of power-on.

[0098] In summary, the present invention: (1) adjusts the thickness of the patterned platinum film during the physical vapor deposition process to control the resistance value of the patterned film blade so as to adapt it to higher input power conditions.

[0099] (2) By designing the length of the patterned structure resistance wire, the resistance value of the patterned film blade can be further controlled.

[0100] (3) A patterned platinum-based resistor film was prepared by a template method based on a hollow stainless steel template combined with a magnetron sputtering physical vapor deposition method.

[0101] (4) The heating temperature of the patterned thin film blade is increased through a double-sided coating process.

[0102] (5) By designing the laser punching structure of the patterned film blade and combining it with the M1 screw and nut fastening design, the electrical contact stability between the patterned film blade and the blade holder rod can be enhanced.

[0103] (6) Based on the above scheme, the present invention prepares a high-temperature patterned platinum-based film blade 100, and provides a hot knife cutter integrated device including the patterned platinum-based film blade 100. The blade can work stably for multiple times under an input power of 28V-45W, and output a heating temperature exceeding 1000°C when powered on for 60-100s each time. In the hot knife cutter integrated device, after the external wire is connected to the power supply, the patterned platinum-based film blade 100 generates heat under a specific voltage, and the temperature can reach up to 850°C or more, and the Dyneema rope (melting point 120°C) can be melted within 2 to 3 seconds.

[0104] The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A hot knife cutter integrated device, characterized in that: Includes patterned platinum-based film blades, as well as a hot knife holder, a pressure plate, a T-shaped slide, a compression spring, a knife holder rod, and a heavy-duty connector cold press pin; The patterned platinum-based thin film blade comprises a silicon nitride substrate, the bottom surface and the top surface of the silicon nitride substrate are symmetrically provided with titanium bonding coatings, two titanium bonding coatings are symmetrically provided with platinum resistance coatings, the platinum resistance coatings comprise a linear resistance coating area and lead coating areas respectively connected to both ends of the linear resistance coating area, and each of the linear resistance coating areas is covered with a silicon dioxide insulation coating; The pressure plate is fixedly connected to one end of the hot knife seat, one end of the pressure plate extends into the hot knife seat, and the other end is fixedly connected to a pre-tightened rope for a fastening component. One end of the T-shaped head of the T-shaped slider is slidably arranged in the pressure plate, and the other end passes through the hot knife seat in a direction away from the pressure plate. The compression spring is arranged in the hot knife seat and sleeved outside the T-shaped slider. The two ends of the compression spring are respectively in contact with the inner bottom surface of the hot knife seat and the T-shaped head of the T-shaped slider. Two tool holder rods are fixedly installed in the T-shaped slider, and one end of the two tool holder rods close to the pressure plate extends out of the T-shaped slider. The block is fixedly connected to the patterned platinum-based film blade, and the two tool holder rods are respectively conductively connected to the lead plating areas at both ends, the patterned platinum-based film blade and the rope are cross-distributed and abutted against each other, under the action of the pre-tightened rope, the patterned platinum-based film blade is flush with the end surface of the pressure plate, and the compression spring is in a compressed state, the other ends of the two tool holder rods extend out of the T-shaped slider and are respectively fixedly connected to the two heavy-load connector cold-pressing pins, the two heavy-load connector cold-pressing pins are respectively connected with external wires, and the two external wires are respectively used to connect the two poles of the power supply.

2. The hot knife cutter integrated device according to claim 1, characterized in that: The titanium bonding coating includes a linear bonding coating area and lead bonding coating areas respectively connected to both ends of the linear bonding coating area, the linear resistance coating area is arranged on the linear bonding coating area and the two are completely overlapped, and the lead coating area is arranged on the lead bonding coating area and the two are completely overlapped.

3. The hot knife cutter integrated device according to claim 1, characterized in that: The thickness of the titanium bonding coating is 100-3000 nm, the thickness of the platinum resistance coating is 20-200 nm, and the thickness of the silicon dioxide insulation coating is 200-400 nm.

4. The hot knife cutter integrated device according to claim 1, characterized in that: An open slot is provided at the end of the tool holder rod, the patterned platinum-based film blade is inserted into the open slot and pressed into the open slot by screws and nuts, and the two side surfaces of the same open slot are respectively in conductive contact with the two lead plating areas at the same end.

5. The hot knife cutter integrated device according to claim 1, characterized in that: A first fixing plate and a second fixing plate are respectively provided on both sides of the heavy-loaded connector cold-pressed needle, and the first fixing plate and the second fixing plate are fastened together by screws and nuts. The first fixing plate and the second fixing plate press the heavy-loaded connector cold-pressed needle to the tool holder rod and press the heavy-loaded connector cold-pressed needle to the external wire.

6. The hot knife cutter integrated device according to claim 1, characterized in that: The surface of the cold pressing pin of the heavy-duty connector is gold-plated, the pressure plate is solid-lubricated after anodizing, the hot knife seat is anodized, the T-shaped slider and the compression spring are solid-lubricated, and the hot knife seat is insulated from various components of the conductive circuit.

7. The hot knife cutter integrated device according to claim 1, characterized in that: The patterned platinum-based thin film blade is prepared by the following method: A titanium bonding coating is symmetrically prepared on the bottom and top surfaces of a silicon nitride substrate by a first hollow template using a physical vapor deposition method; the hollow pattern of the first hollow template is the same as the shape of the titanium bonding coating; A symmetrical platinum resistance coating is prepared on two titanium bonding coatings by a second hollow template using a physical vapor deposition method; the hollow pattern of the second hollow template is the same as the shape of the platinum resistance coating; A symmetrical silicon dioxide insulating coating is prepared on the linear resistance coating area of ​​two platinum resistance coatings through a third hollow template by a physical vapor deposition method; the hollow pattern of the third hollow template is the same as the shape of the linear resistance coating area.

8. The hot knife cutter integrated device according to claim 7, characterized in that: The target material for preparing the titanium bonding coating is a Ti target, and the working parameters for preparing the titanium bonding coating include: an argon gas flow rate of 40 sccm, an argon plasma working pressure of 0.65 Pa, a deposition temperature of 150° C., a Ti target power of 390 W, and a deposition time of 7 to 200 min; The target material for preparing the platinum resistance coating is a Pt target, and the working parameters for preparing the platinum resistance coating include: an argon gas flow rate of 40 sccm, an argon plasma working pressure of 0.65 Pa, a deposition temperature of 150° C., a Pt target power of 280 W, and a deposition time of 2 to 20 min; The target material for preparing the silicon dioxide insulating coating is a SiO2 target, and the working parameters for preparing the silicon dioxide insulating coating include: an argon gas flow rate of 40 sccm, an argon plasma working pressure of 0.65 Pa, a deposition temperature of 150°C, a SiO2 target power of 200W, and a deposition time of 40 to 80 minutes.

9. The hot knife cutter integrated device according to claim 7, characterized in that: The surface roughness of the silicon nitride substrate is less than 10 nm.

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