Semiconductor waste gas treatment apparatus and semiconductor waste gas treatment method

Abstract

The application relates to the technical field of semiconductor waste gas treatment, and provides a semiconductor waste gas treatment device and a semiconductor waste gas treatment method, wherein the semiconductor waste gas treatment device comprises a washing tower and a waste gas treatment assembly connected with the washing tower; the waste gas treatment assembly comprises multiple waste gas treatment units connected in sequence; each waste gas treatment unit comprises a shell assembly and a waste gas treatment device; a channel communicated with the waste gas treatment device is arranged through the inside of the shell assembly; the shell assembly is provided with a branch connecting component communicated with the channel; the shell assembly is provided with a first partition part and a second partition part at intervals; the first partition part and the second partition part are located on the same side of the branch connecting component; and the waste gas treatment device is connected to the shell assembly between the first partition part and the second partition part. The semiconductor waste gas treatment method provided by the application can improve the waste gas treatment efficiency of the semiconductor waste gas treatment device according to the requirement, and the device is convenient for equipment installation and later maintenance.

Description

Technical Field

[0001] This invention relates to the field of semiconductor waste gas treatment technology, and in particular to a semiconductor waste gas treatment device and a semiconductor waste gas treatment method. Background Technology

[0002] In the semiconductor manufacturing process, a large amount of harmful waste gas is generated. The treatment of harmful waste gas is an indispensable part of the production process. Therefore, the existing technology provides a waste gas treatment device for treating the harmful waste gas generated in the semiconductor manufacturing process.

[0003] The aforementioned waste gas treatment equipment includes a reaction chamber and a scrubbing tower connected to each other. Waste gas is passed into the reaction chamber and heated to remove harmful substances from the waste gas. The waste gas passing through the reaction chamber is further passed into the scrubbing tower for washing. After washing, the gas is discharged into the air, thereby achieving the purification treatment of the waste gas.

[0004] However, the existing waste gas treatment equipment has at least the following drawbacks:

[0005] 1) During the waste gas treatment process, all the gases containing harmful substances to be treated enter the same reaction chamber, resulting in a high gas flow rate and uneven reaction temperature in the reaction chamber, which reduces the waste gas treatment efficiency.

[0006] 2) The large size of the same reaction chamber equipment not only occupies a lot of space and affects the space utilization rate, but also requires the entire device to be stopped when the reaction chamber equipment needs maintenance, which is very inconvenient. Summary of the Invention

[0007] This invention provides a semiconductor waste gas treatment device and a semiconductor waste gas treatment method to solve at least one of the technical defects mentioned above. It can reduce the volume of each waste gas treatment device, ensure uniform reaction temperature within the waste gas treatment device, reduce the airflow velocity within the waste gas treatment device, improve waste gas treatment efficiency, reduce the complexity of the semiconductor waste gas treatment device, and facilitate subsequent installation and maintenance.

[0008] This invention provides a semiconductor waste gas treatment device, comprising:

[0009] Scrubber tower;

[0010] An exhaust gas treatment assembly is connected to the scrubbing tower. The exhaust gas treatment assembly includes multiple exhaust gas treatment units connected in sequence. Each exhaust gas treatment unit includes a housing assembly and an exhaust gas treatment device. The housing assembly has a channel that communicates with the exhaust gas treatment device. The housing assembly has a branch connection component that communicates with the channel. The housing assembly has a first partition and a second partition spaced apart. The first partition and the second partition are located on the same side of the branch connection component. The exhaust gas treatment device is located between the first partition and the second partition.

[0011] According to a semiconductor waste gas treatment device provided by the present invention, the housing assembly includes a first housing and a second housing connected to each other, the first housing defining a first channel segment, and the second housing defining a second channel segment communicating with the first channel segment;

[0012] The branch connection component is disposed in the first housing and communicates with the first channel section;

[0013] Both the first partition and the second partition are located in the second housing; or, the first partition is located in the first housing, the second partition is located in the second housing, and the waste gas treatment equipment is connected to the second housing and communicates with the second channel section.

[0014] According to a semiconductor waste gas treatment device provided by the present invention, the branch connection component includes a branch connection port opened in the housing assembly and a branch connection baffle blocking the branch connection port.

[0015] According to a semiconductor waste gas treatment device provided by the present invention, the branch connection component includes a branch connection housing protruding from the surface of the housing assembly, and the branch connection port is disposed in the branch connection housing.

[0016] According to a semiconductor waste gas treatment device provided by the present invention, the branch connection housing is provided with a third partition.

[0017] According to the semiconductor waste gas treatment device provided by the present invention, the first partition, the second partition and the third partition are all partition grooves suitable for inserting corresponding partition plates, and each partition groove is provided with a corresponding sealing cover plate.

[0018] According to the present invention, a semiconductor waste gas treatment device is characterized in that the waste gas treatment device comprises:

[0019] Equipment body;

[0020] A cover is placed over the equipment body and together with the equipment body, forms a reaction chamber. The cover is connected to an exhaust gas pipeline and an auxiliary gas pipeline.

[0021] A heater is located at the center of the cover and extends into the reaction chamber.

[0022] According to the present invention, a semiconductor waste gas treatment device is provided, wherein a spraying mechanism is provided in the channel.

[0023] According to a semiconductor waste gas treatment device provided by the present invention, the scrubbing tower includes a tower body and a scrubbing chamber disposed in the tower body, wherein the scrubbing chamber is provided with a first spray zone, a first adsorption zone and a cooling and dehumidification zone from bottom to top.

[0024] According to a semiconductor waste gas treatment device provided by the present invention, the washing chamber is further provided with a second spray zone and a second adsorption zone, the second spray zone and the second adsorption zone being located between the first adsorption zone and the cooling and dehumidification zone.

[0025] The present invention also provides a semiconductor waste gas treatment method, which is based on the semiconductor waste gas treatment device described in any of the foregoing embodiments, and includes the following steps:

[0026] The waste gases generated during semiconductor manufacturing are processed simultaneously by multiple waste gas treatment devices from different areas.

[0027] The high-temperature, high-humidity mixture containing particulate dust generated by the corresponding waste gas treatment equipment enters the scrubbing tower simultaneously through the channels inside the shell assembly.

[0028] The mixture generated by the reaction first passes through the first spray zone, causing larger solid particles to settle, then passes through the first adsorption zone, where dust is captured, and finally passes through the second spray zone, the second adsorption zone, and the cooling and dehumidification zone in sequence before being discharged.

[0029] According to a semiconductor waste gas treatment method provided by the present invention, when maintaining part of the waste gas treatment equipment:

[0030] The third partition section at the connection point of two branch lines adjacent to part of the exhaust gas treatment equipment on the sealing housing assembly;

[0031] An additional pipeline is used to connect two branch connection ports adjacent to a portion of the exhaust gas treatment equipment to isolate a portion of the exhaust gas treatment equipment;

[0032] Open the third partition section at the two branch connection ports adjacent to part of the exhaust gas treatment equipment on the housing assembly;

[0033] The first and second partitions on the sealing housing assembly, which are adjacent to a portion of the exhaust gas treatment equipment, are used to isolate a portion of the exhaust gas treatment equipment.

[0034] This invention provides a semiconductor waste gas treatment device. By configuring the waste gas treatment components as multiple waste gas treatment units connected sequentially, and connecting these units to a scrubbing tower, the waste gas containing harmful substances can be divided into zones and treated separately in each of the multiple waste gas treatment units. The treated waste gas is then collected and fed into the scrubbing tower. Essentially, multiple waste gas treatment units use the same scrubbing tower, which reduces the number of scrubbing towers required and increases their volume. Concentrating the gases produced by the reactions in all waste gas treatment units into a single scrubbing tower facilitates dust adsorption and reduces gas humidity, thereby reducing scrubbing difficulty, improving scrubbing efficiency, and saving waste gas treatment costs.

[0035] Furthermore, each exhaust gas treatment unit includes a housing assembly and an exhaust gas treatment device. The housing assembly has a through-hole channel communicating with the exhaust gas treatment device. The housing assembly also has branch connection components communicating with the channel. The housing assembly is spaced apart by a first partition and a second partition, located on the same side of the branch connection components. The exhaust gas treatment device is connected between the first and second partitions. This reduces the volume of each exhaust gas treatment device, ensures uniform reaction temperature within the device, reduces airflow velocity, and, due to the reduced size, improves the spray cooling effect for rapid cooling of the reacted gas. Meanwhile, this configuration allows for the isolation of any waste gas treatment equipment within the waste gas treatment unit when it malfunctions or requires inspection and cleaning. This isolation can be achieved through the first and second partitions, and by connecting the equipment to two adjacent branch connections via additional pipes. This enables the isolation of individual or partial waste gas treatment equipment while the remaining equipment continues to operate. This ensures uninterrupted operation during maintenance of the semiconductor waste gas treatment device, improves its efficiency in treating waste gas, reduces its complexity, and facilitates subsequent installation and maintenance.

[0036] In a semiconductor waste gas treatment method provided in this embodiment of the invention, the semiconductor waste gas is simultaneously fed into multiple waste gas treatment units for processing. This disperses the large volume of waste gas for treatment, unitizing the waste gas treatment into smaller units, thus improving the waste gas treatment efficiency. When the amount of waste gas entering the system increases, the efficiency of the semiconductor waste gas treatment device can be further improved by adding more waste gas treatment units. Furthermore, the layout of the waste gas treatment units is flexible and can be adjusted as needed, improving space utilization efficiency. The high-temperature, high-humidity mixture containing particulate dust generated by the reaction in the waste gas treatment units is simultaneously fed into a scrubbing tower. It undergoes spraying in the first and second spraying zones, adsorption in the first and second adsorption zones, and discharge after cooling and dehumidification. This scrubbing tower effectively adsorbs and washes impurities in the waste gas, bringing it up to emission standards and achieving waste gas treatment. Additionally, the large-scale design of the scrubbing tower reduces the requirements for washing the waste gas after the high-temperature reaction, reducing costs and improving the efficiency of the semiconductor waste gas treatment device.

[0037] Compared to existing technologies, the semiconductor waste gas treatment device and method provided by this invention achieve unitization of the waste gas treatment device through multiple waste gas treatment units, thereby increasing the upper limit of waste gas treatment capacity, simplifying the semiconductor waste gas treatment device, making its installation flexible and easy to maintain, and allowing for adaptive adjustments as needed. It can be used in more working environments, improving the utilization efficiency of installation space. By connecting the waste gas treatment equipment to the internal channels of the shell assembly, it facilitates the large-scale design of the scrubbing tower, reduces the scrubbing tower's requirements for high-temperature reaction waste gas scrubbing, reduces costs, and improves the efficiency of the semiconductor waste gas treatment device in treating waste gas. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0039] Figure 1 This is a schematic diagram of the overall structure of the semiconductor waste gas treatment device provided in an embodiment of the present invention;

[0040] Figure 2 This is a schematic diagram of the overall structure of the waste gas treatment component of the semiconductor waste gas treatment device provided in an embodiment of the present invention;

[0041] Figure 3This is a partial structural diagram of the channel of the semiconductor waste gas treatment device provided in an embodiment of the present invention;

[0042] Figure 4 This is another overall structural schematic diagram of the waste gas treatment component of the semiconductor waste gas treatment device provided in this embodiment of the invention;

[0043] Figure 5 yes Figure 4 A schematic cross-sectional view along the middle AA section;

[0044] Figure 6 yes Figure 5 A magnified view of a portion of point B in the middle;

[0045] Figure 7 This is a schematic diagram of the overall structure of the waste gas treatment equipment in the semiconductor waste gas treatment device provided in the embodiment of the present invention;

[0046] Figure 8 This is a schematic diagram of the overall structure of the waste gas treatment equipment in the semiconductor waste gas treatment device provided in an embodiment of the present invention from another perspective;

[0047] Figure 9 yes Figure 8 A cross-sectional view along the CC direction;

[0048] Figure 10 This is a schematic diagram of the internal structure of the scrubbing tower in the semiconductor waste gas treatment device provided in an embodiment of the present invention;

[0049] Figure 11 This is a schematic diagram of the process steps of the semiconductor waste gas treatment method provided in the embodiment of the present invention.

[0050] Figure label:

[0051] 1: Scrubber tower;

[0052] 10: Tower body; 101: Washing chamber; 1011: First spray zone; 1012: Second spray zone; 1013: First adsorption zone; 1014: Second adsorption zone; 1015: Cooling and dehumidification zone; 1016: Heating and dehumidification zone;

[0053] 2: Exhaust gas treatment components;

[0054] 20: Exhaust gas treatment unit;

[0055] 21: Housing assembly; 22: Exhaust gas treatment equipment;

[0056] 210: Air intake component; 211: Channel; 212: Branch connection component; 213: First partition; 214: Second partition; 215: First housing; 216: Second housing; 217: First channel section; 218: Second channel section; 219: Spraying mechanism; 2121: Branch connection port; 2122: Branch connection baffle; 2123: Branch connection housing; 2124: Third partition;

[0057] 221: Equipment body; 222: Cover; 223: A heater; 224: Exhaust gas pipeline; 225: Scraper assembly; 226: Exhaust component; 2211: Reaction chamber; 2241: First pipe section; 2242: Second pipe section; 2251: Scraper body; 2252: Drive component. Detailed Implementation

[0058] The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and should not be construed as limiting the scope of the invention.

[0059] In the description of the embodiments of the present invention, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0060] In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of the present invention based on the specific circumstances.

[0061] In embodiments of the present invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0062] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0063] Figure 1 This is a schematic diagram of the overall structure of the semiconductor waste gas treatment device provided in an embodiment of the present invention; Figure 2 This is a schematic diagram of the overall structure of the waste gas treatment component of the semiconductor waste gas treatment device provided in an embodiment of the present invention; Figure 3 This is a partial structural diagram of the channel of the semiconductor waste gas treatment device provided in an embodiment of the present invention; Figure 4 This is another overall structural schematic diagram of the waste gas treatment component of the semiconductor waste gas treatment device provided in an embodiment of the present invention.

[0064] Reference Figure 1 and Figure 2 The present invention provides a semiconductor waste gas treatment device, comprising: a scrubbing tower 1 and a waste gas treatment component 2.

[0065] like Figure 1 As shown, the exhaust gas treatment component 2 is connected to the scrubbing tower 1, wherein, as Figure 2 As shown, the exhaust gas treatment assembly 2 includes multiple exhaust gas treatment units 20 connected in sequence. The multiple exhaust gas treatment units 20 are connected in sequence, that is, the exhaust gas treated by each exhaust gas treatment unit 20 can be collected together and introduced into the scrubbing tower 1 for further treatment.

[0066] Specifically, exhaust gas can be simultaneously introduced into multiple exhaust gas treatment units 20. Each exhaust gas treatment unit 20 performs high-temperature treatment on the exhaust gas to remove harmful substances mixed in it. The high-temperature treated exhaust gas is then cooled by each exhaust gas treatment unit 20. The exhaust gas treated by each exhaust gas treatment unit 20 can be collected by the exhaust gas treatment assembly 2 and further fed into the scrubbing tower 1 for further treatment. Once the scrubbing tower 1 has treated the exhaust gas to meet the standards, it can be discharged into the atmosphere. It should be noted that at least one scrubbing tower 1 is provided, but it can be increased as needed. This embodiment of the invention uses one scrubbing tower 1 as an example for explanation. Because this embodiment of the invention collects the exhaust gas treated by multiple exhaust gas treatment units 20 and feeds it into the scrubbing tower 1, the scrubbing tower 1 is characterized by its large size.

[0067] like Figure 2 and Figure 4 As shown, each exhaust gas treatment unit 20 includes a housing assembly 21 and an exhaust gas treatment device 22, that is, each exhaust gas treatment unit 20 includes at least one set of housing assemblies 21 and exhaust gas treatment devices 22 that are connected to each other.

[0068] In an optional embodiment of the present invention, each exhaust gas treatment unit 20 may further include a housing assembly 21 and a corresponding exhaust gas treatment device 22. The exhaust gas treatment device 22 may be configured as at least one, for example, one, two or three exhaust gas treatment devices 22 may be connected to a housing assembly 21. In this embodiment of the present invention, each exhaust gas treatment unit 20 is exemplified by including a set of mutually corresponding and connected housing assemblies 21 and exhaust gas treatment devices 22.

[0069] like Figure 2 and Figure 3 As shown, a channel 211 is provided through the interior of the housing assembly 21, and at least one exhaust gas treatment device 22 is connected to the channel 211 so that the mixture formed by the reaction of at least one exhaust gas treatment device 22 enters the scrubbing chamber 1 through the channel 211. That is, the housing assembly 21 is provided with a hollow cavity for gas circulation. Specifically, the channel 211 can be integrally formed with the housing assembly 21. For example, the raw material can be bent and welded on a machine tool to form a housing assembly 21 with a hollow channel 211. The specific manufacturing method is not limited in this embodiment of the invention.

[0070] Additionally, the housing assembly 21 is provided with a branch connection component 212 communicating with the channel 211. This branch connection component 212 can be connected to an additional pipe, allowing gas to be drawn out from the channel 211 of the housing assembly 21. It is understood that since the exhaust gas passing through the exhaust gas treatment device 22 is high-temperature gas, the material used to manufacture the housing assembly 21 needs to possess high-temperature resistance properties. Specific materials can be selected adaptively, and this embodiment of the invention does not impose specific limitations on this. The cross-section of the housing assembly 21 can be circular, triangular, quadrilateral, or other polygonal. This embodiment of the invention uses a quadrilateral cross-section, such as... Figure 2 As shown, the housing assembly 21 is an example of a cuboid and is illustrated below.

[0071] Among them, continue to refer to Figure 2 The housing assembly 21 is provided with a first partition 213 and a second partition 214 at intervals. The first partition 213 and the second partition 214 are located on the same side of the branch connection component 212, that is, the first partition 213 and the second partition 214 are located between two adjacent branch connection components 212. It should be noted that the exhaust gas treatment device 22 is located in the housing assembly 21 between the first partition 213 and the second partition 214, that is, the first partition 213 and the second partition 214 are not located on the same side of the exhaust gas treatment device 22.

[0072] It should be noted that one or more exhaust gas treatment devices 22 may be installed on the housing assembly 21 between the first partition 213 and the second partition 214. When the channel 211 is blocked by the first partition 213 and the second partition 214, a single exhaust gas treatment device 22 may be isolated, or a portion of two or more exhaust gas treatment devices 22 may be isolated.

[0073] Specifically, the first partition 213 and the second partition 214 can be integrally manufactured with the housing assembly 21. For example, molten material is placed in a preset mold, cooled, and then peeled off from the mold to obtain the housing assembly 21 with the first partition 213 and the second partition 214. In an optional embodiment of the present invention, the first partition 213 and the second partition 214 can also be obtained by secondary processing on the housing assembly 21. For example, the manufactured housing assembly 21 is placed on a machine tool and processed by planing or grinding to remove part of the housing assembly 21 to obtain the first partition 213 and the second partition 214.

[0074] Specifically, the connection between the exhaust gas treatment device 22 and the housing assembly 21 can be fixed by clamps or screws; in addition, a sealing ring can be added to its connection to improve the sealing performance of the device. It is understood that since the exhaust gas passing through the exhaust gas treatment device 22 is a high-temperature gas, the sealing ring needs to have high-temperature resistance properties, such as sealing rings made of high-temperature resistant rubbers such as silicone rubber, various fluororubbers, polysulfide rubber, chlorohydrin rubber, nitrile rubber, polyacrylate rubber, polyurethane rubber and butyl rubber.

[0075] It is understood that the semiconductor waste gas treatment device provided in this embodiment of the invention configures the waste gas treatment component 2 as multiple waste gas treatment units 20 connected in sequence, and connects the multiple waste gas treatment units 20 to the scrubbing tower 1. This allows the gas containing harmful substances to be treated to enter the multiple waste gas treatment units 20 in different areas for separate treatment, and the treated waste gas is then collected and fed into the scrubbing tower 1. Essentially, multiple waste gas treatment units 20 use the same scrubbing tower 1, which reduces the number of scrubbing towers 1, increases the volume of the scrubbing tower 1, and concentrates the gas generated after the reaction of all waste gas treatment units 20 into the same scrubbing tower 1 for washing. This facilitates dust adsorption and reduces gas humidity, thereby reducing washing difficulty, improving washing efficiency, and saving waste gas treatment costs.

[0076] Furthermore, each exhaust gas treatment unit 20 includes a housing assembly 21 and an exhaust gas treatment device 22. The housing assembly 21 has a through-hole channel 211 communicating with the exhaust gas treatment device 22. The housing assembly 21 also has a branch connection component 212 communicating with the channel 211. The housing assembly 21 is spaced apart by a first partition 213 and a second partition 214, located on the same side of the branch connection component 212. The exhaust gas treatment device 22 is connected between the first partition 213 and the second partition 214. This reduces the volume of each exhaust gas treatment device 22, ensuring uniform reaction temperature within the device. Furthermore, the reduced volume of the exhaust gas treatment device 22 enhances the spray cooling effect, rapidly cooling the reacted gas. Meanwhile, with this configuration, when a certain waste gas treatment device 22 in the waste gas treatment assembly 2 malfunctions or needs inspection and cleaning, the waste gas treatment device 22 in the waste gas treatment unit 20 can be isolated through the first isolation part 213 and the second isolation part 214. The two branch connection parts 212 adjacent to the waste gas treatment device 22 are connected by an additional pipe, so that the waste gas treatment device 22 can be isolated individually or partially, while the remaining waste gas treatment devices continue to operate. This ensures that the semiconductor waste gas treatment device can be maintained without stopping, improves the efficiency of the semiconductor waste gas treatment device in treating waste gas, reduces the complexity of the semiconductor waste gas treatment device, and facilitates later installation and maintenance.

[0077] Compared to existing technologies, the semiconductor waste gas treatment device provided by this invention achieves modularization of the waste gas treatment device through multiple waste gas treatment units 20, thereby increasing the upper limit of waste gas treatment capacity, simplifying the semiconductor waste gas treatment device, making its installation method flexible and easy to maintain later, and allowing for adaptive adjustment as needed. It can be used in more working environments, improving the utilization efficiency of installation space. By connecting the waste gas treatment equipment 22 to the internal channel 211 of the housing assembly 21, it facilitates the large-scale design of the scrubbing tower 1, reduces the scrubbing tower 1's requirements for scrubbing waste gas after high-temperature reaction, reduces costs, and improves the efficiency of the semiconductor waste gas treatment device in treating waste gas.

[0078] like Figure 2 As shown, in some embodiments of the present invention, the housing assembly 21 includes a first housing 215 and a second housing 216 connected to each other. In optional embodiments of the present invention, the housing assembly 21 may also include only one integral housing, that is, the aforementioned first housing 215 and second housing 216 are an integral structure, referring to... Figure 2 In this embodiment of the invention, the housing assembly 21 includes a first housing 215 and a second housing 216 that are connected to each other as a specific example for illustration.

[0079] Specifically, in this embodiment of the invention, the housing assembly 21 is composed of two separate parts, namely a first housing 215 and a second housing 216. The manufacturing method of the first housing 215 and the second housing 216 is similar to that of the housing assembly 21 described above, and will not be repeated here.

[0080] The first housing 215 and the second housing 216 are fixedly connected. This connection can be achieved through fasteners such as screws or bolts, or through interlocking snap-fit ​​mechanisms. In optional embodiments of the invention, the two housings can also be fixedly connected by welding. A sealing element, such as a sealing ring, can be added to the connection between the first housing 215 and the second housing 216 to improve the sealing performance and safety of the device. It is easy to understand that this sealing element is similar to the sealing ring described above, both requiring high-temperature resistance. Specific material selection can be referenced from the sealing ring description above and will not be repeated here.

[0081] The first housing 215 defines a first channel segment 217, and the second housing 216 defines a second channel segment 218 that communicates with the first channel segment 217. In other words, the first housing 215 is provided with the first channel segment 217, and the second housing 216 is provided with the second channel segment 218 that communicates with the first channel segment 217. Specifically, the formation of the first channel segment 217 and the second channel segment 218 is similar to the formation of the channel 211 described above, and will not be repeated here.

[0082] The branch connection component 212 is located in the first housing 215 and communicates with the first channel segment 217. The connection method between the branch connection component 212 and the first channel segment 217 of the first housing 215 is similar to the connection method between the branch connection component 212 and the housing assembly 21 described above, and will not be repeated here.

[0083] Among them, such as Figure 2 As shown, the first partition 213 is disposed on the first housing 215, and the second partition 214 is disposed on the second housing 216. In an optional embodiment of the present invention, the first partition 213 and the second partition 214 may also be disposed on the second housing 216. In an embodiment of the present invention, the manufacturing method of the first partition 213 and the second partition 214 is similar to the manufacturing method of the first partition 213 and the second partition 214 being disposed on the housing assembly 21 as described above, and will not be repeated here.

[0084] The exhaust gas treatment device 22 is connected to the second housing 216 and communicates with the second channel section 218, that is, as mentioned above, the exhaust gas treatment device 22 is located between the first partition part 213 and the second partition part 214. The connection method between the exhaust gas treatment device 22 and the second housing 216 is similar to the connection method between the exhaust gas treatment device 22 and the housing assembly 21 described above, and will not be repeated here.

[0085] It is understood that the semiconductor exhaust gas treatment device provided by the present invention is assembled into a housing assembly 21 by combining a first housing 215 and a second housing 216 that are interconnected. This allows the housing assembly 21 to be disassembled, breaking it down into smaller parts, which facilitates the manufacturing, installation, and subsequent maintenance of the semiconductor exhaust gas treatment device. By placing the branch connection component 212 on the first housing 215 and connecting the exhaust gas treatment device 22 to the second housing 216, the first housing 215 and the second housing 216 can be designed and manufactured separately for the branch connection component 212 and the exhaust gas treatment device 22, simplifying the manufacturing process of the housing assembly 21 and facilitating its transportation. Furthermore, the adaptive placement of the first partition 213 and the second partition 214 on the first housing 215 and the second housing 216 makes the manufacturing of the first partition 213 and the second partition 214 more flexible, facilitating the manufacturing of the semiconductor exhaust gas treatment device and improving its usability and versatility.

[0086] Based on the above embodiments, unlike the above embodiments, in the semiconductor waste gas treatment device provided by the present invention, the branch connection component 212 includes a branch connection port 2121 opened in the housing assembly 21 and a branch connection baffle 2122 sealing the branch connection port 2121.

[0087] Specifically, the branch connection port 2121 can be integrally manufactured with the housing component 21. For example, molten material is placed in a pre-set mold, cooled, and the mold is peeled off to obtain the housing component 21 with the branch connection port 2121. In an optional embodiment of the present invention, the branch connection port 2121 can also be obtained by placing the housing component 21 on a machine tool for secondary processing after the housing component 21 is manufactured. For example, part of the housing component 21 is removed by cutting to obtain the branch connection port 2121.

[0088] The branch connection baffle 2122 can be manufactured by removing a portion of the housing assembly 21 to obtain the branch connection port 2121, as described above. That is, the material cut off from the housing assembly 21 is processed to obtain the branch connection baffle 2122. In an optional embodiment of the present invention, the branch connection baffle 2122 can also be obtained directly by processing raw materials. For example, the sheet metal is placed on a machine tool, and the size of the branch connection port 2121 corresponding to the branch connection baffle 2122 is measured in advance. Based on this size, a suitable branch connection baffle 2122 corresponding to the branch connection port 2121 is processed. In this case, the processing of the branch connection baffle 2122 can be streamlined, that is, mass production. Specific implementation methods will not be described in detail in this embodiment of the present invention.

[0089] It is understood that in the semiconductor exhaust gas treatment device provided by the present invention, by providing a branch connection port 2121 and a branch connection baffle 2122 sealing the branch connection port 2121 in the branch connection component 212, when the branch connection component 212 needs to exhaust gas from the channel 211, the branch connection baffle 2122 can be removed, and the gas in the channel 211 can be led out through the branch connection port 2121; when the branch connection component 212 does not need to function, that is, when it needs to be closed, the branch connection baffle 2122 and the branch connection port 2121 can cooperate to achieve the sealing of the branch connection component 212, ensuring the sealing and safety of the device. In addition, the branch connection and the branch connection baffle 2122 can simplify the branch connection component 212, improve its operability, facilitate the manufacture, installation and use of the semiconductor exhaust gas treatment device, and make the semiconductor exhaust gas treatment device adaptable to more working scenarios, improving its dissemination and versatility.

[0090] Based on the above embodiments, unlike the above embodiments, in the semiconductor waste gas treatment device provided by the present invention, the branch connection component 212 includes a branch connection housing 2123 protruding from the surface of the housing assembly 21, and a branch connection port 2121 is disposed in the branch connection housing 2123. In an optional embodiment of the present invention, the branch connection housing 2123 may also protrude from the first housing 215, in which case the branch connection port 2121 is disposed in the branch connection housing 2123.

[0091] The branch connection housing 2123 has a hollow cavity, that is, the branch connection housing 2123 is hollow and allows gas to pass through. It has openings at both ends, the opening near the first housing 215 is the first opening, the opening away from the first housing 215 is the second opening, and the first housing 215 has a third opening corresponding to the first opening.

[0092] Specifically, the branch connection housing 2123 can be integrally manufactured with the first housing 215. For example, molten material is placed in a pre-set mold, cooled, and the mold is peeled off to obtain the first housing 215 with the branch connection housing 2123. At this time, the first opening and the third opening overlap as one.

[0093] In an optional embodiment of the present invention, the branch connection housing 2123 can also be fixedly connected to the fabricated first housing 215. Specifically, the branch connection housing 2123 is fabricated separately and then fixedly connected to the first housing 215. The fixed connection can be achieved by welding, fastening with screws or bolts, or by snap-fit ​​connections. Taking welding as an example, the end face of the branch connection housing 2123 can be welded to the outer wall of the first housing 215. In this case, the third opening is smaller than or equal to the size of the first opening. Alternatively, a portion of the branch connection housing 2123 can be inserted into the first housing 215 through the third opening, and the outer wall of the branch connection housing 2123 can be welded to the first housing 215. In this case, the size of the first opening is smaller than the third opening. Other connection methods are similar and will not be described in detail here.

[0094] It should be noted that the cross-sectional shape of the branch connection shell can be circular, triangular, quadrilateral, or other polygonal. In this embodiment of the invention, the cross-section is quadrilateral, such as... Figure 2 As shown, the branch connection shell is a cuboid as an example and explanation. The material of the branch connection shell can be the same as or different from that of the first shell 215. For specific selection, please refer to the material selection of shell assembly 21 above, which will not be repeated here.

[0095] It should also be noted that the second opening and the first opening of the branch connection housing 2123 can have different shapes, that is, the two end faces of the branch connection housing 2123 can be different. For example, the cross-section of the branch connection housing 2123 gradually decreases in the extension direction of the branch connection housing 2123, that is, the second opening is smaller than the first opening.

[0096] It is understood that in the semiconductor waste gas treatment device provided in the embodiments of the present invention, the branch connecting housing 2123 is provided by protruding from the surface of the first housing 215. This facilitates the connection between the branch connecting component 212 and the additional pipe, increases the operating space, improves the operability of the device, and makes the device more rational.

[0097] Based on the above embodiments, unlike the above embodiments, in the semiconductor waste gas treatment device provided by the present invention, the branch connection housing 2123 is provided with a third partition 2124.

[0098] The arrangement of the third partition 2124 is similar to that of the first partition 213 and the second partition 214 described above, and will not be repeated here.

[0099] It is understood that in the semiconductor waste gas treatment device provided in the embodiments of the present invention, by providing a third partition 2124 in the branch connection housing 2123, when the branch connection component 212 is connected to the corresponding additional pipe, the branch connection housing 2123 can be sealed by the third partition 2124. When the branch connection baffle 2122 is opened to connect the additional pipe, the leakage of waste gas is reduced, the safety of the device is improved, the device can adapt to more working requirements, the ease of operation of the device is improved, and the device is more rational.

[0100] Figure 6 yes Figure 5 A magnified view of a portion of point B in the middle.

[0101] Based on the above embodiments, the semiconductor waste gas treatment device provided by the present invention differs from the above embodiments in that, referring to... Figure 2 and Figure 3 The first partition 213, the second partition 214 and the third partition 2124 are all partition grooves suitable for inserting corresponding partition plates (not shown in the figure), and each partition groove is provided with a corresponding sealing cover plate.

[0102] The partition groove can be integrally manufactured with its corresponding shell, as described above, by casting molten material into a pre-set mold and allowing it to cool to obtain the corresponding shell with the partition groove. In an optional embodiment of the invention, the partition groove can also be obtained by placing the corresponding shell on a machine tool and cutting off a portion of it after the corresponding shell has been manufactured. The sealing cover plate and partition plate corresponding to the partition groove can be obtained by casting molten material into a mold, or by placing raw material, such as sheet metal, on a machine tool and processing it by planing or grinding to obtain the sealing cover plate and partition plate.

[0103] Specifically, in an optional embodiment of the present invention, the partition groove adopts a wrap-around slot, and the partition plate is wrapped with rubber on all four sides. When the partition plate is needed, it is simply inserted into the slot; it should be noted here that, Figure 5 and Figure 6 As shown, the bottom of the slot is opened to ensure that the partition plate can reach the bottom of the channel 211, thereby achieving the isolation of the channel 211. The rubber covering the partition plate is similar to the material of the sealing ring mentioned above, both of which need to have high temperature resistance. For specific material selection, please refer to the material selection of the sealing ring mentioned above, which will not be repeated here.

[0104] It is understood that in the semiconductor waste gas treatment device provided in the embodiments of the present invention, by setting up a partition groove, a partition plate and a sealing cover, and by using the cooperation of the three, when it is necessary to seal the channel 211, the sealing cover connected to the partition groove can be removed, and the partition plate can be inserted into the channel 211 along the partition groove to achieve sealing of the channel 211, or to achieve control of the gas flow rate in the channel 211. This makes the device applicable to more working environments, facilitates the later maintenance of the device, and improves the efficiency of the device in treating waste gas.

[0105] Figure 7 This is a schematic diagram of the overall structure of the waste gas treatment device 22 in the semiconductor waste gas treatment apparatus provided in this embodiment of the invention; Figure 8 This is a schematic diagram of the overall structure of the waste gas treatment device 22 in the semiconductor waste gas treatment apparatus provided in this embodiment of the invention from another perspective; Figure 9 yes Figure 8 A cross-sectional view along the CC direction.

[0106] Based on the above embodiments, the semiconductor waste gas treatment device provided by the present invention differs from the above embodiments in that, referring to... Figure 7 , Figure 8 and Figure 9 The waste gas treatment equipment 22 includes a main body 221, a cover 222, and a heater 223.

[0107] The cover 222 is placed on the equipment body 221 and together with the equipment body 221, forms a reaction chamber 2211. The cover 222 is connected to an exhaust gas pipeline 224 and an auxiliary gas pipeline. A heater 223 is located at the center of the cover 222 and extends into the reaction chamber 2211.

[0108] Specifically, harmful waste gas enters the reaction chamber 2211 through the waste gas pipeline 224, and auxiliary gas enters the reaction chamber 2211 through the auxiliary gas pipeline. The harmful waste gas and auxiliary gas mix in the reaction chamber 2211 to form a mixed gas. A heater in the reaction chamber 2211 is controlled by the control component to heat the mixed gas evenly. When the temperature in the reaction chamber 2211 reaches the reaction temperature required by the mixed gas, that is, the environment meets the conditions for the mixed gas to undergo a chemical reaction, the mixed gas undergoes a chemical reaction, and the harmful substances in the mixed gas are converted into harmless substances through the chemical reaction. Further, the waste gas treated by the waste gas treatment equipment 22 is introduced into the scrubbing tower 1 through the shell assembly 21. The waste gas is further treated by the scrubbing tower 1, and the purpose of waste gas treatment can be achieved.

[0109] The hazardous waste gas mentioned above refers to the mixture of hazardous gases generated during the semiconductor manufacturing process. This mixture of gases can undergo a chemical reaction under certain environmental conditions to remove the hazardous substances in the mixture. After auxiliary treatment by scrubbing tower 1, it can meet the standards for safe emission. The specific process and conditions of the mixed gas reaction can be referred to the existing technology, which will not be elaborated here.

[0110] The device body 221 is made of a high-temperature resistant material, such as a high-temperature resistant metal or high-temperature resistant glass. The device body 221 can be manufactured by a one-piece molding method such as injection molding or casting, or it can be manufactured by secondary processing, such as welding sheet metal to obtain the device body 221. The shape of the device body 221 can be cylindrical. In optional examples of the present invention, the shape of the device body 221 can also be cuboid or conical, etc. This embodiment of the present invention uses a cylindrical device body 221 as an example.

[0111] The cover 222 and the device body 221 are connected by a fixed connection. The cover 222 and the device body 221 can be fixedly connected by a threaded connection or by fasteners such as screws or bolts. In an optional embodiment of the present invention, a sealing element, such as a high-temperature resistant sealing ring, is also provided between the cover 222 and the device body 221. The high-temperature resistant sealing ring can improve the sealing performance and safety of the device and prevent the leakage of harmful gases.

[0112] The cover 222 and the device body 221 can be connected by the cover 222 wrapping the device body 221. For example, a groove can be made on the cover 222 to cover the device body 221, that is, the side wall and bottom wall of the cover 222 form a semi-enclosed structure, wrapping the end of the device body 221. In an optional embodiment of the present invention, the device body 221 can also wrap the cover 222, that is, the side wall of the device body 221 wraps the cover 222. In this case, the connection between the two can be a threaded connection. Furthermore, the inner wall surface of the side wall of the device body 221 can be recessed in the direction away from the end of the device body 221 to form an inner recessed platform. The inner recessed platform can serve as a blocking structure, that is, the cover 222 is supported on the recessed platform to prevent the cover 222 from falling into the interior of the device body 221, that is, into the reaction chamber 2211.

[0113] One of the heaters 223 includes a heating rod and an insulating section connected to the end of the heating rod. The heating rod passes through the center of the cover 222 and is installed in the reaction chamber 2211 enclosed by the equipment body 221 and the cover 222. The insulating section is fixedly connected to the cover 222. That is, the heater is suspended in the center of the reaction chamber 2211 by connecting to the cover 222. Uniform heating in the reaction chamber 2211 can be achieved by one heater 223.

[0114] One method of fixing the heater 223 to the cover 222 is through a threaded connection. For example, a mounting hole is made in the center of the cover 222, and corresponding threads are made on the insulating section of the heater 223. When the heating rod of the heater 223 is inserted into the reaction chamber 2211 through the threaded hole, the threads on the insulating section mate with the mounting hole, thus fixing the heater 223 to the cover 222. In other words, the insulating section is equivalent to a bolt that mates with the mounting hole. By providing a mounting hole on the cover 222 and fixing the heater 223 to the cover 222 through a threaded connection, when the heater is damaged, it can be easily disassembled and replaced, improving the operability of the device and enabling it to adapt to more working environments.

[0115] One alternative method for fixing a heater 223 to a cover 222 is to install a flange between the heater 223 and the cover 222, connecting them together. For example, a first flange can be installed on the insulating section of the heater 223, and a second flange can be installed on the cover 222. The first flange is detachably connected to the second flange, and the two flanges are fixedly connected by bolts and nuts. This method of fixing the heater to the cover 222 via the first flange simplifies assembly and disassembly and extends its service life.

[0116] The insulating section is connected to the first flange, so that the insulating section is connected to the second flange of the cover 222 through the first flange. The insulating section does not need to be directly connected to the cover 222, which reduces the wear on the insulating section and can extend the life of the insulating section, thereby extending the service life of the heater.

[0117] It should be noted that a gasket is required between the first and second flanges to improve the sealing of the device and enhance its safety. The first flange is a high-temperature resistant insulating flange, and the material of the second flange can be the same as or different from that of the first flange. Since the environment inside the reaction chamber 2211 is a high-temperature environment, the material of the second flange must be a high-temperature resistant material.

[0118] It is understood that the present invention provides a semiconductor waste gas treatment device. By covering the device body 221 with a cover 222, a reaction chamber 2211 is formed by the hollow device body 221 and the cover 222, providing a reaction environment for waste gas treatment. Furthermore, by connecting a waste gas pipeline 224 and an auxiliary gas pipeline to the cover 222, the waste gas and auxiliary gas can be introduced into the reaction chamber 2211, providing a suitable gaseous environment for the waste gas reaction. Further, a heater 223 is disposed at the center of the cover 222 and extends into the reaction chamber 2211. Thus, since the heater is located within the cover 222... The heater 223 penetrates into the reaction chamber 2211, with its axis coinciding with the center line of the reaction chamber 2211. Through the operation of a single heater 223, heat is evenly transferred from the center of the reaction chamber 2211 to its surroundings, achieving uniform heating of the mixed gas within the chamber. This provides a uniform heating environment for waste gas treatment, thereby improving reaction efficiency. Furthermore, the waste gas treatment equipment 22 is modularly designed; each unit is lightweight and compact, allowing for flexible placement based on available space. For example, it can be laid flat (0°) or vertically. Figure 2 As shown, its placement angle can be between 0° and 90°, and it can be reasonably arranged according to the space. In this way, the device can adapt to more working environments and improve space utilization.

[0119] Compared to existing technologies, the semiconductor waste gas treatment device provided by this invention miniaturizes the device body 221 by incorporating a heater 223, thus reducing the complexity of the equipment. The waste gas pipeline 224 is arranged around the heater 223, which is positioned at the center of the cover 222. This ensures that after the waste gas enters the reaction chamber 2211 through the waste gas pipeline 224, it is evenly heated around the heater 223, thereby improving the waste gas treatment efficiency and production efficiency. Furthermore, the device is simple and movable, facilitating maintenance and allowing for efficient placement based on available space, thus improving space utilization.

[0120] Based on the above embodiments, unlike the above embodiments, in the semiconductor waste gas treatment device provided by the present invention, at least two waste gas pipelines 224 are provided. The at least two waste gas pipelines 224 are arranged around the circumference of the heater, that is, at least two waste gas pipelines 224 are arranged around a heater 223. In this way, after the waste gas is introduced into the reaction chamber 2211, the at least two waste gas pipelines 224 can guide the waste gas entering the reaction chamber 2211. The waste gas can be evenly distributed around the heater in the reaction chamber 2211, so that the heater can evenly heat the waste gas, thereby improving the waste gas treatment efficiency.

[0121] Based on the above embodiments, unlike the above embodiments, in the semiconductor waste gas treatment device provided by the present invention, each waste gas pipeline 224 includes a first pipe section 2241 and a second pipe section 2242 connected to each other, the first pipe section 2241 and the second pipe section 2242 are arranged at an angle to each other; the first pipe section 2241 passes through the cover 222, the second pipe section 2242 is located in the reaction chamber 2211, that is, part of the first pipe section 2241 is inside the reaction chamber 2211, part of the first pipe section 2241 is outside the reaction chamber 2211, and the second pipe section 2242 is entirely located inside the reaction chamber 2211.

[0122] The first pipe segment 2241 and the second pipe segment 2242 can be manufactured as a single piece. For example, a mold is set in advance, molten metal is poured into the mold, and after the molten metal cools, the exhaust pipe 224 with the first pipe segment 2241 and the second pipe segment 2242 can be peeled off from the mold. In an optional embodiment of the present invention, the first pipe segment 2241 and the second pipe segment 2242 can also be used as components, that is, the first pipe segment 2241 and the second pipe segment 2242 are combined together to form the exhaust pipe 224.

[0123] The included angle between the first pipe segment 2241 and the second pipe segment 2242 can be pre-designed during the mold making process, that is, corresponding to the aforementioned method of manufacturing the exhaust pipe 224 by using a mold; the included angle between the first pipe segment 2241 and the second pipe segment 2242 can also be obtained by changing the splicing angle between the first pipe segment 2241 and the second pipe segment 2242 when assembling the first pipe segment 2241 and the second pipe segment 2242 as parts.

[0124] The angle between the first pipe segment 2241 and the second pipe segment 2242 is greater than 90° and less than 180°. For example, the angle between the first pipe segment 2241 and the second pipe segment 2242 can be set to 90°, 120°, 150° or 180°. This embodiment of the invention does not make a specific limitation on this.

[0125] The first pipe segment 2241 is inserted into the cover 222. An opening can be made in the cover 222, through which the first pipe segment 2241 is inserted into the cover 222. The connection between the first pipe segment 2241 and the cover 222 can be a threaded connection or a welding connection.

[0126] The first pipe segment 2241 is inserted into the cover 222. Alternatively, the first pipe segment 2241 or the exhaust pipe 224 can be integrally manufactured with the cover 222 as part of the cover 222. For example, a mold is set up in advance, molten metal is poured into the mold, and after the molten metal cools, the cover 222 with the first pipe segment 2241 or the exhaust pipe 224 can be peeled off from the mold.

[0127] It should be noted that the angled opening between the first pipe section 2241 and the second pipe section 2242 can face the heater inside the reaction chamber 2211 or it can face away from the heater. This embodiment of the invention does not specifically limit this.

[0128] It is understood that the present invention provides a semiconductor waste gas treatment device, which ensures that the waste gas rotates into the reactor in the reaction chamber 2211 by setting the first pipe section 2241 and the second pipe section 2242 of the waste gas pipeline 224 at an angle to each other, thereby increasing the gas turbulence kinetic energy and improving the reaction efficiency.

[0129] In an optional embodiment of the present invention, the exhaust gas pipeline 224 may also be provided on the side wall of the equipment body 221, that is, the first pipeline is located outside the reaction chamber 2211, and the second pipeline passes through the side wall of the equipment body 221. In this case, the included angle between the first pipeline and the second pipeline can be 0°-180°.

[0130] Based on the above embodiments, unlike the above embodiments, the semiconductor waste gas treatment device provided in this embodiment of the invention further includes a scraper assembly 225, such as... Figure 9 As shown, the scraper assembly 225 is arranged around the inner wall of the reaction chamber 2211 along the axial direction of the device body 221.

[0131] The scraper assembly 225 may include a scraper body 2251 and a drive component 2252. The scraper body 2251 is spiral-shaped and is rotatably disposed on the device body 221. The scraper body 2251 is arranged around the device body 221 along the axial direction. The blade of the scraper body 2251 is adapted to contact the inner wall of the reaction chamber 2211 to scrape away the dirt deposited on the inner wall of the reaction chamber 2211.

[0132] It should be noted that during the reaction process, the mixed gas will produce particulate matter that deposits and adheres to the inner wall of the reaction chamber 2211. In order to improve the service life of the equipment, the inner wall of the reaction chamber 2211 needs to be cleaned regularly.

[0133] The driving component 2252 is located on the equipment body 221 and is connected to the scraper body 2251 for driving the scraper body 2251 to rotate. The driving component 2252 can be located inside the equipment body 221, i.e., inside the reaction chamber 2211, or it can be located outside the equipment body 221.

[0134] The connection between the drive component 2252 and the device body 221 can be achieved by fastening with fasteners such as bolts or screws, or by interlocking with clips and slots. Specifically, this embodiment of the invention does not impose any specific limitations on this method.

[0135] In an optional embodiment of the present invention, when the driving member 2252 is located outside the device body 221, a connecting member can be provided between the driving member 2252 and the scraper body 2251. An opening is made at the bottom center of the device body 221, and the connecting member passes through the opening. The driving member 2252 can drive the scraper body 2251 to rotate through the connecting member. This allows the driving member 2252 to not contact the device body 221, reducing heat transfer and improving the life of the driving component.

[0136] Specifically, the drive unit 2252 is connected to the scraper body 2251 to drive the scraper body 2251 to rotate. The blade of the scraper body 2251 contacts the inner wall of the reaction chamber 2211. During the rotation of the scraper body 2251, the dirt on the inner wall of the reaction chamber 2211 can be scraped off by the scraper body 2251. Since the scraper body 2251 is spiral, after the dirt leaves the inner wall of the reaction chamber 2211, it can be rotated out of the reaction chamber 2211 along the spiral trend of the scraper body 2251 and fall into the collection component at the bottom of the device body 221. This prevents the dirt from adhering to the inner wall of the reaction chamber 2211 again and improves the cleaning efficiency of the scraper assembly 225 for the inside of the reaction chamber 2211.

[0137] In an optional embodiment of the present invention, the scraper assembly 225 may further include a scraper body 2251 and a rotating rod (not shown in the figure). The scraper body 2251 and the rotating rod are connected by a drive mechanism. By manually rotating the rotating rod, the rotating rod can drive the scraper body 2251 to rotate within the reaction chamber 2211, thereby achieving the purpose of removing dirt. In other words, the driving action of the drive component 2252 on the scraper body 2251 is replaced by manually rotating the rotating rod. Thus, when it is necessary to clean the inner wall of the reaction chamber 2211, it can be done simply by manually rotating the rotating rod, eliminating the need for the drive component 2252 and saving costs.

[0138] Based on the above embodiments, the semiconductor waste gas treatment device provided in this embodiment of the invention is provided with a flow control valve in the waste gas pipeline 224 and a temperature sensor in the reaction chamber 2211.

[0139] By passing the exhaust gas through the exhaust gas pipeline 224 equipped with a flow control valve, the amount of gas entering the reaction chamber 2211 can be controlled. By incorporating a temperature sensor inside the reaction chamber 2211, the heating power of the heater can be controlled according to the internal temperature of the reaction chamber 2211, ensuring a stable temperature inside the reaction chamber 2211. Through the above settings, the volume of exhaust gas to be treated can be changed in real time, and the temperature inside the reaction chamber 2211 can be maintained within the optimal reaction temperature range, thereby improving the exhaust gas treatment efficiency.

[0140] Figure 5 yes Figure 4 A schematic cross-sectional view along the middle AA.

[0141] Based on the above embodiments, unlike the above embodiments, in the semiconductor waste gas treatment device provided by the present invention, the waste gas treatment device 22 further includes an exhaust component 226, and the second housing 216 further includes a gas collection component 210 that matches the exhaust component 226. Specifically, as shown... Figure 5As shown, the exhaust component 226 protrudes from the side wall of the equipment body 221, and the gas collecting component 210 protrudes from the side wall of the second housing 216. The exhaust component 226 and the gas collecting component 210 are connected in a cooperative manner. The connection between the two can be fixed by clamps or screws. In this way, after the exhaust gas is treated in the exhaust gas treatment equipment 22, it can be introduced into the channel 211 through the exhaust component 226 and the gas collecting component 210 to realize the collection of the treated exhaust gas. Furthermore, the collected exhaust gas can be introduced into the scrubbing tower 1 through the housing assembly 21 for further treatment, which facilitates the scaling up of the scrubbing tower 1 and improves the efficiency of the semiconductor exhaust gas treatment device in treating exhaust gas.

[0142] Based on the above embodiments, the semiconductor waste gas treatment device provided in this embodiment of the invention differs from the above embodiments in that, for example... Figure 5 As shown, a spraying mechanism 219 is provided in the channel 211. Specifically, for example, a spray head can be selected as the spraying mechanism 219 and placed on the top wall, side wall or bottom wall of the channel 211. This embodiment of the invention does not make specific limitations on this. The angle between the spraying mechanism 219 and the wall of the channel 211 can also be adjusted as needed.

[0143] The gas temperature after being treated by the waste gas treatment equipment 22 is relatively high and needs to be cooled down. The temperature of the gas after passing through the reaction chamber 2211 can be cooled down by the spray device. In addition, the small diameter of the channel 211 can improve the spray cooling effect, quickly cool down the gas after the reaction, improve the process flow, and improve the efficiency of waste gas treatment. It should be noted that the exhaust gas treatment component 2 includes a channel 211. The exhaust gas treated by multiple exhaust gas treatment units 20 must pass through this channel 211 before entering the scrubbing tower 1. In other words, this channel 211 is the channel closest to the scrubbing tower 1. In this case, only one spray mechanism 219 is needed. This single spray mechanism 219 can achieve the cooling treatment of the exhaust gas treated by multiple exhaust gas treatment units 20, simplifying the device and saving costs. In an optional embodiment of the present invention, multiple spray mechanisms 219 can also be provided. The specific number and layout can be adapted as needed. For example, multiple spray mechanisms 219 can be arranged at intervals along the extension direction of the channel 211. The detailed layout method will not be described here. It should also be noted that the spray mechanism 219 can also serve as a cleaning mechanism for the channel 211. That is, during device maintenance, the spray mechanism 219 can be used to assist manual cleaning of the inside of the channel 211.

[0144] like Figure 5 As shown, a drain outlet can also be provided at the bottom of the channel wall. Specifically, before disassembly and maintenance, a partition plate can be inserted into the corresponding partition groove on the channel that needs maintenance to isolate the channel section. The liquid in the channel can be drained through the drain outlet to facilitate further disassembly and maintenance.

[0145] Figure 10 This is a schematic diagram of the internal structure of the scrubbing tower 1 in the semiconductor waste gas treatment device provided in this embodiment of the invention.

[0146] Based on the above embodiments, the semiconductor waste gas treatment device provided in this embodiment of the invention differs from the above embodiments in that, for example... Figure 10 As shown, the washing tower 1 includes a tower body 10 and a washing chamber 101 disposed in the tower body 10. The washing chamber 101 is provided with a first spray zone 1011, a first adsorption zone 1013 and a cooling and dehumidification zone 1015 from bottom to top.

[0147] The first spray zone 1011 may include multiple spray heads or multiple spray pipes. This embodiment of the invention does not specifically limit the specific application of this method. The first spray zone 1011 can spray and cool the gas entering the scrubbing tower 1. It should be noted that the gas treated by the waste gas treatment component 2 is a high-temperature, high-humidity, gas-liquid-solid mixture containing particulate dust. The first spray zone 1011 at the bottom of the scrubbing tower 1 sprays the gas for the first time, causing larger solid particles to adhere to more liquid, increasing their weight. Due to gravity, the larger solid particles will sink to the bottom of the scrubbing tower 1, improving the efficiency of the scrubbing tower 1 in treating the gas. Figure 10 As shown, the bottom of the scrubbing tower 1 is provided with a drain port. The mixture that has been separated and precipitated in the mixed gas can be discharged out of the scrubbing tower 1 through the drain port to solve the problem of sediment deposition inside the scrubbing chamber 101.

[0148] The material of the first adsorption zone 1013 can be a polypropylene mesh (PP mesh), Pall rings, polyurethane cotton, or other materials that can stabilize flow and adsorb moisture and dust. This embodiment of the invention does not specifically limit the material used. The first adsorption zone 1013 can further process the gas passing through the first spray zone 1011, capturing dust particles from the gas-liquid-solid mixture.

[0149] The cooling and dehumidification zone 1015 is located above the first spray zone 1011 and the first adsorption zone 1013. It can cool and dehumidify the gas after it has been treated by the first spray zone 1011 and the first adsorption zone 1013. In an optional embodiment of the present invention, the cooling and dehumidification zone 1015 can be specifically selected as a cooling and dehumidification plate. Its temperature can be set to a low temperature, such as 0 degrees or 1 degree. After the gas passes through the cooling and dehumidification zone 1015, the temperature is further reduced and the absolute humidity of the gas is also reduced. The mixture becomes a gas with low moisture content close to 0 degrees. Furthermore, the treated gas is discharged through a pipe connected to the scrubbing tower 1. Since the pipe temperature is the lowest that of the ambient temperature, the relative humidity of the gas is reduced again. In this way, the phenomenon of condensation in the pipe can be reduced.

[0150] In an optional embodiment of the present invention, a heating and dehumidifying belt 1016 can also be installed at the top of the washing tower 1 before the discharge pipeline. The heating and dehumidifying belt 1016 further heats and dehumidifies the gas, reduces the relative humidity of the gas, and reduces the formation of condensate.

[0151] Based on the above embodiments, the semiconductor waste gas treatment device provided in this embodiment of the invention differs from the above embodiments in that, for example... Figure 10 As shown, the washing chamber 101 is also provided with a second spray zone 1012 and a second adsorption zone 1014, which are located between the first adsorption zone 1013 and the cooling and dehumidification zone 1015.

[0152] The arrangement of the second spray zone 1012 and the second adsorption zone 1014 is similar to that of the first spray zone 1011 and the first adsorption zone 1013, and will not be described again here. By setting the second spray zone 1012 and the second adsorption zone 1014, the gas passing through the first spray zone 1011 and the first adsorption zone 1013 can be further cooled and adsorbed a second time. After the mixed gas undergoes secondary cooling and adsorption, it becomes a high-humidity, medium-low temperature gas-liquid mixture. In this way, the impurities in the gas mixture can be further reduced to meet the emission standards, ensuring the effectiveness of the semiconductor waste gas treatment device in treating waste gas and improving the safety of the device.

[0153] Figure 11 This is a schematic diagram of the process steps of the semiconductor waste gas treatment method provided in the embodiment of the present invention.

[0154] The present invention also provides a semiconductor waste gas treatment method, which performs treatment based on the semiconductor waste gas treatment apparatus of any of the foregoing embodiments, with reference to... Figure 11 The semiconductor waste gas treatment method includes the following steps:

[0155] Step 301: Waste gas generated during semiconductor manufacturing enters multiple waste gas treatment devices 22 from different areas for simultaneous treatment.

[0156] In step 302, the high-temperature, high-humidity mixture containing particulate dust generated by the reaction of the corresponding waste gas treatment equipment 22 enters the scrubbing tower 1 through the channel 211 inside the shell assembly 21.

[0157] In step 303, the mixture generated by the reaction first passes through the first spray zone 1011 to cause larger solid particles to sink, and then passes through the first adsorption zone 1013 to capture the dust.

[0158] Step 304, and finally the product passes through the second spray zone 1012, the second adsorption zone 1014, and finally through the cooling and dehumidification zone 1015 before being discharged.

[0159] It is understood that in the semiconductor waste gas treatment method provided in this embodiment of the invention, by simultaneously introducing the semiconductor waste gas into multiple waste gas treatment units 20 for treatment, a large amount of waste gas can be dispersed for treatment, and the waste gas treatment units 20 can be divided into smaller units, thus improving the waste gas treatment efficiency. When the amount of waste gas introduced increases, the upper limit of the semiconductor waste gas treatment device can be increased by adding more waste gas treatment units 20, thereby improving the waste gas treatment efficiency. In addition, the layout of the waste gas treatment units 20 is flexible and can be freely adjusted as needed, improving the space utilization efficiency. By simultaneously introducing the high-temperature, high-humidity mixture containing particulate dust generated by the reaction in the waste gas treatment units 20 into the scrubbing tower 1, and spraying it through the first spray zone and the second spray zone 1012, and adsorbing it through the first adsorption zone 1013 and the second adsorption zone 1014, and discharging it through the cooling and dehumidification zone 1015, the scrubbing tower 1 can adsorb and wash the impurities in the waste gas, so that the waste gas meets the emission standards, thereby achieving waste gas treatment. In addition, by making the scrubbing tower 1 larger, the requirements for scrubbing the exhaust gas after the high-temperature reaction are reduced, the cost is reduced, and the efficiency of the semiconductor exhaust gas treatment device in treating exhaust gas is improved.

[0160] Based on the above embodiments, unlike the above embodiments, in the semiconductor waste gas treatment method provided by the present invention, when maintaining part of the waste gas treatment equipment 22, the third partition 2124 at the two branch connection ports 2121 adjacent to part of the waste gas treatment equipment 22 on the housing assembly 21 is blocked.

[0161] An additional pipeline is used to connect two branch connection ports 2121 adjacent to a portion of the exhaust gas treatment equipment 22 to isolate a portion of the exhaust gas treatment equipment 22;

[0162] Open the third partition 2124 at the two branch connection ports 2121 adjacent to part of the exhaust gas treatment device 22 on the housing assembly 21;

[0163] The first partition 213 and the second partition 214 on the housing assembly 21, which are adjacent to part of the exhaust gas treatment equipment 22, are blocked to isolate part of the exhaust gas treatment equipment.

[0164] Specifically, such as Figure 2 As shown, taking some of the multiple exhaust gas treatment units 20, namely exhaust gas treatment units 20 M1, M2, and M3, as examples, when the equipment is operating normally, the sealing cover in each exhaust gas treatment unit 20 will seal its corresponding partition groove. When maintenance or replacement of the exhaust gas treatment equipment 22 and the channel 211 is required, the following steps can be taken:

[0165] First, open the sealing cover of the third partition 2124 of M1 and M3, insert the corresponding partition plate along the partition groove into the branch connection housing 2123, and seal it.

[0166] The second step is to remove the branch connection baffle 2122 of the branch connection housing 2123 of M1 and M3, and connect M1 and M3 through an additional pipe.

[0167] The third step is to open the sealing cover of the first partition 213 in M1, insert the corresponding partition plate into the partition groove, and seal the area.

[0168] The fourth step is to open the sealing cover of the first partition 213 in M2, insert the corresponding partition plate into the partition groove, and seal the area. In this way, the exhaust gas treatment equipment 22 in M1 and the channel 211 located between the first partition 213 in M1 and the first partition 213 in M2 can be maintained.

[0169] Alternatively, the sealing cover of the second partition 214 in M2 can be opened, and the corresponding partition plate can be inserted into the partition groove to seal the area. In this way, the exhaust gas treatment equipment 22 in M1 and M2, as well as the passage 211 located between the first partition 213 in M1 and the second partition 214 in M2, can be maintained simultaneously.

[0170] It is understood that, in the semiconductor waste gas treatment method provided in the embodiments of the present invention, the above steps can realize the maintenance of a single waste gas treatment device 22 or multiple waste gas treatment devices 22 at the same time, and can also realize modular targeted maintenance of the channel 211, thereby improving the maintenance efficiency of the semiconductor waste gas treatment device, reducing the maintenance difficulty of the semiconductor waste gas treatment device, and improving the usability and usability of the semiconductor waste gas treatment device.

[0171] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor waste gas treatment device, characterized in that, include: Scrubber (1); The exhaust gas treatment assembly (2) is connected to the scrubbing tower (1). The exhaust gas treatment assembly (2) includes a plurality of exhaust gas treatment units (20) connected in sequence. Each exhaust gas treatment unit (20) includes a housing assembly (21) and an exhaust gas treatment device (22). The housing assembly (21) has a channel (211) that communicates with the exhaust gas treatment device (22) through its interior. The housing assembly (21) has a branch connection component (212) that communicates with the channel (211). The housing assembly (21) has a first partition (213) and a second partition (214) spaced apart. The first partition (213) and the second partition (214) are located on the same side of the branch connection component (212). The exhaust gas treatment device (22) is located between the first partition (213) and the second partition (214).

2. The semiconductor waste gas treatment device according to claim 1, characterized in that, The housing assembly (21) includes a first housing (215) and a second housing (216) connected to each other, the first housing (215) defining a first channel segment (217) and the second housing (216) defining a second channel segment (218) communicating with the first channel segment (217); The branch connection component (212) is disposed on the first housing (215) and communicates with the first channel section (217); The first partition (213) and the second partition (214) are both located in the second housing (216); or, the first partition (213) is located in the first housing (215), the second partition (214) is located in the second housing (216), and the waste gas treatment device (22) is connected to the second housing (216) and communicates with the second channel section (218).

3. The semiconductor waste gas treatment device according to claim 1, characterized in that, The branch connection component (212) includes a branch connection port (2121) opened in the housing assembly (21) and a branch connection baffle (2122) blocking the branch connection port (2121).

4. The semiconductor waste gas treatment device according to claim 3, characterized in that, The branch connection component (212) includes a branch connection housing (2123) protruding from the surface of the housing assembly (21), and the branch connection port (2121) is provided on the branch connection housing (2123).

5. The semiconductor waste gas treatment device according to claim 4, characterized in that, The branch connection housing (2123) is provided with a third partition (2124).

6. The semiconductor waste gas treatment device according to claim 5, characterized in that, The first partition (213), the second partition (214) and the third partition (2124) are all partition grooves suitable for inserting corresponding partition plates, and each partition groove is provided with a corresponding sealing cover plate.

7. The semiconductor waste gas treatment apparatus according to any one of claims 1 to 6, characterized in that, The waste gas treatment equipment (22) includes: Equipment body (221); A cover (222) is placed on the equipment body (221) and together with the equipment body (221) encloses a reaction chamber (2211). The cover (222) is connected to an exhaust gas pipeline (224) and an auxiliary gas pipeline. A heater (223) is located at the center of the cover (222) and extends into the reaction chamber (2211).

8. The semiconductor waste gas treatment apparatus according to any one of claims 1 to 6, characterized in that, The channel (211) is equipped with a spraying mechanism (219).

9. The semiconductor waste gas treatment apparatus according to any one of claims 1 to 6, characterized in that, The washing tower (1) includes a tower body (10) and a washing chamber (101) disposed in the tower body (10). The washing chamber (101) is provided with a first spray zone (1011), a first adsorption zone (1013) and a cooling and dehumidification zone (1015) from bottom to top.

10. The semiconductor waste gas treatment device according to claim 9, characterized in that, The washing chamber (101) is further provided with a second spray zone (1012) and a second adsorption zone (1014), which are located between the first adsorption zone (1013) and the cooling and dehumidification zone (1015).

11. A method for treating semiconductor waste gas, wherein the treatment is performed using the semiconductor waste gas treatment apparatus according to any one of claims 1 to 9, characterized in that, Includes the following steps: The waste gas generated during the semiconductor manufacturing process enters multiple waste gas treatment devices (22) from different areas for simultaneous treatment; The high-temperature, high-humidity mixture containing particulate dust generated by the corresponding waste gas treatment equipment (22) enters the scrubbing tower (1) through the channel (211) inside the shell assembly (21); The mixture generated by the reaction first passes through the first spray zone (1011) to cause larger solid particles to settle, then passes through the first adsorption zone (1013) to capture dust, and finally passes through the second spray zone (1012), the second adsorption zone (1014) and the cooling and dehumidification zone (1015) in sequence before being discharged.

12. The semiconductor waste gas treatment method according to claim 11, characterized in that, When maintaining the exhaust gas treatment equipment (22) described above: The third partition (2124) on the sealing housing assembly (21) at the two branch connection ports (2121) adjacent to part of the exhaust gas treatment equipment (22); An additional pipeline is used to connect the two branch connection ports (2121) adjacent to part of the exhaust gas treatment equipment (22); Open the third partition (2124) on the housing assembly (21) at the two branch connection ports (2121) adjacent to part of the exhaust gas treatment equipment (22); The first partition (213) and the second partition (214) on the sealing housing assembly (21) are adjacent to a portion of the exhaust gas treatment equipment (22) to isolate a portion of the exhaust gas treatment equipment (22).

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