Display screen body and display screen body manufacturing method

Abstract

The display screen body and the display screen body manufacturing method provided by the embodiment of the present application relate to the technical field of display. The display screen body comprises a wafer substrate, and the wafer substrate comprises a plurality of metal bonding areas distributed at intervals. The display screen body further comprises a driving layer, a metal layer, an epitaxial layer and a light emitting device layer which are sequentially stacked on the wafer substrate, wherein the light emitting device layer comprises a plurality of display chips, and the orthographic projection of the epitaxial layer and the light emitting device layer on the wafer substrate is located in the metal bonding area. There are independent epitaxial layers in different metal bonding areas, and the stress in the epitaxial layer is not easy to accumulate. Compared with the case that the epitaxial layer is located on the entire wafer substrate in the prior art, the structure of the epitaxial layer in the embodiment is more stable and is not easy to be damaged, so that the yield of the display chips in the light emitting device layer manufactured on the epitaxial layer is higher.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to a display screen body and a method for manufacturing the display screen body. Background Technology

[0002] When manufacturing display chips (such as Mic-LED), a display body containing a certain number of display chips can be fabricated first, and then individual display chips can be obtained from the display body through cutting. However, the display bodies manufactured in the prior art suffer from a low yield rate of display chips. Summary of the Invention

[0003] In order to overcome the technical problems mentioned in the above technical background, this application provides a display screen body and a method for manufacturing the display screen body.

[0004] A first aspect of this application provides a display screen body, the display screen body including a wafer substrate having a plurality of spaced-apart metal bonding regions;

[0005] The display screen further includes a driving layer, a metal layer, an epitaxial layer, and a light-emitting device layer sequentially stacked on the wafer substrate. The metal layer is metal-bonded to the driving layer, and the light-emitting device layer includes a display chip.

[0006] The orthogonal projections of the epitaxial layer and the light-emitting device layer onto the wafer substrate are located in the metal bonding region.

[0007] In one possible embodiment of this application, each of the metal bonding regions has the same shape and size;

[0008] The sum of the areas of all the metal bonding regions accounts for 65% to 85% of the area of ​​the wafer substrate.

[0009] In one possible embodiment of this application, the plurality of said metal bonding regions are axially symmetrically distributed about the symmetry axis of the wafer substrate; or,

[0010] The plurality of said metal bonding regions are centrally symmetrically distributed about the geometric center of said wafer substrate.

[0011] In one possible embodiment of this application, the shape of the metal bonding region is any one of a circle, rectangle, triangle, ellipse, and rhombus.

[0012] In one possible embodiment of this application, the shape of the metal bonding region is circular, and the plurality of metal bonding regions include a first metal bonding region whose center coincides with the geometric center of the wafer substrate, and a plurality of second metal bonding regions uniformly distributed around the first metal bonding region and equidistant from the first metal bonding region.

[0013] The ratio of the diameter of the second metal bonding region to the distance between adjacent second metal bonding regions is 2:1 to 5:1.

[0014] In one possible embodiment of this application, the shape of the metal bonding region is rectangular, and the plurality of metal bonding regions include at least one third metal bonding region whose geometric center is located on the axis of symmetry of the wafer substrate, and a plurality of fourth metal bonding regions located on both sides of the axis of symmetry of the wafer substrate and axially symmetrical with respect to the axis of symmetry.

[0015] In one possible embodiment of this application, the orthogonal projection of the metal layer on the wafer substrate is located in the metal bonding region, and the orthogonal projection of the metal layer on the wafer substrate is located within the orthogonal projection of the driving layer on the wafer substrate.

[0016] In one possible embodiment of this application, in the light-emitting device layers corresponding to different metal bonding regions, at least one of the following three factors is different: the fabrication density of the display chip, the size of the display chip, and the structure of the display chip. The structure of the display chip includes a vertical structure, a forward-rotating structure, and a flip-chip structure.

[0017] A second aspect of this application provides a method for manufacturing a display screen, the method comprising:

[0018] A transfer substrate and a driving substrate are provided, wherein the transfer substrate includes a transfer substrate, an epitaxial layer and a metal layer stacked sequentially, and the driving substrate includes a wafer substrate and a driving layer located on the wafer substrate;

[0019] The metal layer in the transfer substrate is patterned to form multiple spaced patterned regions on the transfer substrate.

[0020] The metal layer in the patterned transfer substrate is aligned and bonded to the driving layer in the driving substrate to form a metal bonding area at the position corresponding to the patterned area.

[0021] The transfer substrate in the transfer substrate is peeled off from the epitaxial layer to expose the epitaxial layer;

[0022] A display chip is fabricated on the epitaxial layer corresponding to the metal bonding region to obtain a light-emitting device layer.

[0023] In one possible embodiment of this application, the transfer substrate is a sapphire substrate, and the number of metal bonding regions is plurality of. The step of peeling the transfer substrate from the epitaxial layer in the transfer substrate to expose the epitaxial layer includes:

[0024] Based on the distance between the metal bonding region and the geometric center of the wafer substrate, the epitaxial layers corresponding to the multiple metal bonding regions are irradiated sequentially with laser in order of decreasing distance, and the epitaxial layers corresponding to the multiple metal bonding regions are peeled off from the transfer substrate one after another.

[0025] The step of fabricating a display chip on the epitaxial layer corresponding to the metal bonding region to obtain a light-emitting device layer includes:

[0026] Different display chips are fabricated on epitaxial layers corresponding to different metal bonding regions to obtain light-emitting device layers located in different metal bonding regions. The different display chips refer to at least one difference in the density, size, and structure of the display chips.

[0027] The display screen body and its fabrication method provided in this application include a wafer substrate with multiple metal bonding regions spaced apart from each other. The display screen body also includes a driving layer, a metal layer, an epitaxial layer, and a light-emitting device layer sequentially stacked on the wafer substrate. The light-emitting device layer includes multiple display chips. The orthographic projections of the epitaxial layer and the light-emitting device layer onto the wafer substrate are located within the metal bonding regions. Different metal bonding regions contain independent epitaxial layers. Compared to the prior art where the epitaxial layer is located throughout the entire wafer substrate, in this embodiment, stress is less likely to accumulate in the epitaxial layer, and the structure of the epitaxial layer is more stable and less prone to damage. This ensures a higher yield for the display chips fabricated in the light-emitting device layer on the epitaxial layer. Attached Figure Description

[0028] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0029] Figure 1 A schematic diagram illustrating the distribution of metal bonding regions on the wafer substrate provided in this embodiment is shown.

[0030] Figure 2 Example of display body edge Figure 1 Cross-sectional view along the AA' direction;

[0031] Figure 3 A schematic diagram illustrating the peeling sequence of the epitaxial layer in the metal bonding region provided in this embodiment is illustrated.

[0032] Figure 4 This example illustrates a possible distribution of metal bonding regions on a wafer substrate provided in this embodiment;

[0033] Figure 5 This example illustrates another possible distribution of the metal bonding regions on the wafer substrate provided in this embodiment;

[0034] Figure 6 A schematic diagram illustrating a film layer structure of the display screen body provided in this embodiment is shown;

[0035] Figure 7 This embodiment illustrates the distribution of the display chip in different metal bonding regions.

[0036] Figure 8 A flowchart illustrating the display screen manufacturing method provided in this embodiment is shown.

[0037] Figures 9A-9B Example Figure 8 The corresponding process flow diagram.

[0038] Icons: 10-Display body; 100-Driver substrate; 110-Wafer substrate; 1101-Metal bonding region; 1101a-First metal bonding region; 1101b-Second metal bonding region; 1101c-Third metal bonding region; 1101d-Fourth metal bonding region; 120-Driver layer; 130-Metal layer; 140-Epipolar layer; 150-Light-emitting device layer; 1501-Display chip; 200-Transfer substrate; 210-Transfer substrate. Detailed Implementation

[0039] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0040] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0041] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0042] In the description of this application, it should be noted that the terms "upper," "lower," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0043] It should be noted that, where there is no conflict, different features in the embodiments of this application can be combined with each other.

[0044] Through analysis, the inventors discovered that display chips are generally fabricated on epitaxial layers (such as GaN layers). Since epitaxial layers cannot be directly fabricated on metal layers, the display body can be fabricated in the following way: First, an epitaxial layer and a metal layer are sequentially fabricated on a transfer substrate (such as a sapphire substrate). Next, the metal layer on the epitaxial layer is bonded to the driving layer in the driving backplane. Then, the transfer substrate and the epitaxial layer are peeled off, and the epitaxial layer is transferred to the driving backplane. Finally, the display chip is fabricated on the epitaxial layer to obtain the display body. After structural analysis of the above display body, the inventors found that this fabrication method is prone to epitaxial layer cracking, resulting in a low yield of display chips fabricated on epitaxial layers.

[0045] Further analysis of the causes of epitaxial layer cracking revealed that, because the epitaxial layer covers the entire transfer substrate, stress tends to accumulate in the epitaxial layer during the separation of the transfer substrate and the epitaxial layer. This results in the epitaxial layer being subjected to significant stress, making it prone to cracking at thinner locations and allowing cracks to propagate along the epitaxial layer. For example, when the transfer substrate is sapphire, laser irradiation can be used to separate the transfer substrate from the epitaxial layer (GaN layer). Under laser irradiation, the epitaxial layer generates gas (N2). As the separation process progresses, the amount of gas increases, and the stress caused by the gas moving into the separated epitaxial layer continuously increases, making it prone to cracking at thinner locations.

[0046] To address the aforementioned technical problems, the inventors have innovatively designed the following technical solutions, which will be described in detail below with reference to the accompanying drawings. It should be noted that the deficiencies in the existing solutions are the result of the inventors' practical experience and careful research. Therefore, the discovery process of the aforementioned technical problems and the solutions proposed in this embodiment below are contributions made by the inventors to this application during the invention process, and should not be construed as technical content known to those skilled in the art.

[0047] Please refer to Figure 1 and Figure 2 , Figure 1 A schematic diagram illustrating the distribution of metal bonding regions on a wafer substrate is shown. Figure 2 It shows the edge of the display screen. Figure 1 In this embodiment, the display screen body 10 may include a wafer substrate 110, which has a plurality of spaced-apart metal bonding regions 1101. The display screen body 10 may also include a driving layer 120, a metal layer 130, an epitaxial layer 140, and a light-emitting device layer 150 sequentially stacked on the wafer substrate 110. The metal layer 130 is metal-bonded to the driving layer 120. A display chip (e.g., a MicroLED) is fabricated in the light-emitting device layer 150. The orthographic projections of the epitaxial layer 140 and the light-emitting device layer 150 onto the wafer substrate 110 are located in the metal bonding regions 1101. Metal traces in the metal layer 130 can be bonded to metal electrodes in the driving layer 120 under high temperature and high pressure conditions to transmit display driving signals to the display chip located in the light-emitting device layer 150 via the metal traces. After the display chip in the display screen body 10 is cut, each cut display chip includes a driving circuit for driving the display chip. In this embodiment, the light-emitting device layer 150 corresponding to each metal bonding region 1101 can be used to fabricate multiple display chips.

[0048] In the above structure, there are independent epitaxial layers 140 in different metal bonding regions 1101. Compared with the case in the prior art where the epitaxial layer 140 is located in the entire wafer substrate 110, stress is less likely to accumulate in the epitaxial layer 140, and the structure of the epitaxial layer 140 is more stable and less prone to damage. For example, when the transfer substrate is a sapphire substrate, when the transfer substrate is peeled off from the epitaxial layer 140 by laser irradiation, the generated gas can also be discharged through the gas channel formed between adjacent metal bonding regions 1101, and will not move along the peeled epitaxial layer 140. This can also avoid the epitaxial layer 140 from cracking due to stress, and can ensure that the yield of the display chip fabricated in the light-emitting device layer 150 on the epitaxial layer 140 is higher.

[0049] Furthermore, the shapes and sizes of the different metal bonding regions 1101 can be the same or different. The inventors have found that designing the metal bonding regions 1101 to have the same shape and size can increase the yield of display chips per unit area. The sum of the areas of all metal bonding regions 1101 can account for 65% to 85% of the wafer substrate area. Therefore, in this embodiment, it is preferred that the metal bonding regions 1101 have the same shape and size.

[0050] Furthermore, to avoid significant stress differences in the epitaxial layer 140 corresponding to different metal bonding regions 1101 during the fabrication of the display screen body 10 provided in this embodiment, thereby increasing the risk of potential cracking of the epitaxial layer 140, in this embodiment, the multiple metal bonding regions 1101 can be axially symmetrically distributed about the axis of symmetry of the wafer substrate 110, or centrally symmetrically distributed about the geometric center of the wafer substrate 110. For example, with... Figure 3 Taking the axisymmetric (symmetry axis A1A2) metal bonding regions 1101 shown as an example, the epitaxial layer 140 in the first metal bonding region 1101 on the left can be peeled off first, then the epitaxial layer 140 in the first metal bonding region 1101 on the right can be peeled off, then the epitaxial layer 140 in the second metal bonding region 1101 on the right can be peeled off, then the epitaxial layer 140 in the second metal bonding region 1101 on the left can be peeled off, and finally the epitaxial layer 140 in the middle metal bonding region 1101 can be peeled off. This distribution design can balance the stress on the epitaxial layer 140 during the peeling process between the epitaxial layer 140 and the transfer substrate 210.

[0051] In this embodiment, the shape of the metal bonding region 1101 may include, but is not limited to, any one of a circle, rectangle, triangle, ellipse and rhombus.

[0052] Please refer to Figure 4 In one possible implementation of this embodiment, the metal bonding region 1101 can be circular in shape. The plurality of metal bonding regions 1101 include a first metal bonding region 1101a whose center coincides with the geometric center O of the wafer substrate, and a plurality of second metal bonding regions 1101b uniformly distributed around the first metal bonding region 1101a and equidistant from it. The centers of the plurality of second metal bonding regions 1101b lie on a circle centered at the geometric center O of the wafer substrate. As shown in the figure, there are six second metal bonding regions 1101b. The distribution of the metal bonding regions 1101 on the wafer substrate 110 is centrally symmetrical about the geometric center O of the wafer substrate, and also axially symmetrical about axes A1 and A2 in the figure. In this embodiment, the ratio of the diameter d1 of the second metal bonding region 1101b to the distance d2 between adjacent second metal bonding regions 1101b is 2:1 to 5:1. The distance d2 between adjacent second metal bonding regions 1101b refers to the arc length between the intersection points (intersection points M1 and M2 in the figure) formed by the intersection of the circles containing the centers of the plurality of second metal bonding regions 1101b and adjacent second metal bonding regions 1101b.

[0053] Please refer to Figure 5In one possible implementation of this embodiment, the shape of the metal bonding region 1101 can be rectangular. The plurality of metal bonding regions 1101 may include at least one third metal bonding region 1101c whose geometric center O is located on the axis of symmetry (A1A2 in the figure) of the wafer substrate 110, and a plurality of fourth metal bonding regions 1101d located on both sides of the axis of symmetry of the wafer substrate 110 and axially symmetrical with respect to the axis of symmetry.

[0054] It is understood that the above are merely examples. In other embodiments, the shape, number, and distribution of the metal bonding regions 1101 can also be adjusted accordingly, and will not be listed here. In this embodiment, the orthographic projection of the metal layer 130 on the wafer substrate 110 lies within the orthographic projection of the driving layer 120 on the wafer substrate 110. In one embodiment of this invention, please refer again to... Figure 2 The orthographic projection of the metal layer 130 onto the wafer substrate 110 is located in the metal bonding region 1101, and the orthographic projection of the driving layer 120 onto the wafer substrate 110 is also located in the metal bonding region 1101, that is, the orthographic projections of the metal layer 130 and the driving layer 120 onto the wafer substrate 110 coincide. In another embodiment of this invention, please refer to... Figure 6 The orthographic projection of the metal layer 130 onto the wafer substrate 110 lies in the metal bonding region 1101, and the orthographic projection of the driving layer 120 onto the wafer substrate 110 covers the metal bonding region 1101. The metal layers 130 corresponding to different metal bonding regions 1101 can have different film structures or the same film structure. When the metal layers 130 corresponding to different metal bonding regions 1101 can have different film structures, the metal layers 130 corresponding to different metal bonding regions 1101 have the same film thickness.

[0055] Further, please refer to Figure 7 , Figure 7 The example illustrates the distribution of the display chip 1501 in different metal bonding regions 1101 after fabricating the light-emitting device layer 150 on the metal bonding region 1101. In different application scenarios, such as augmented reality display devices, display chips of different shapes or structures are used. In this embodiment, in the light-emitting device layer 150 corresponding to the same metal bonding region 1101, the fabrication size and structure of the display chip 1501 can be the same or different. In the light-emitting device layers 150 corresponding to different metal bonding regions 1101, at least one of the three factors—fabrication density, size, and structure of the display chip 1501—can be different. The structure of the display chip 1501 includes, but is not limited to, vertical structure, forward rotation structure, and flip-chip structure.

[0056] Based on the above, this embodiment also provides a method for manufacturing the above-mentioned display screen body. Please refer to... Figure 8 , Figure 9A and Figure 9B ,in, Figure 8 A schematic diagram of the display screen manufacturing process is shown. Figure 9A and Figure 9B Corresponding to Figure 8 The process flow diagram is shown below. Figure 8 Figure 9 provides a detailed description of the manufacturing method of the display screen.

[0057] Step S11: Provide a transfer substrate and a driving substrate.

[0058] In this step, the transfer substrate 200 may include a transfer substrate 210, an epitaxial layer 140, and a metal layer 130 stacked sequentially. The driving substrate 100 may include a wafer substrate 110 and a driving layer 120 located on the wafer substrate 110.

[0059] Step S12: The metal layer or the metal layer and epitaxial layer in the transfer substrate are patterned to form multiple spaced patterned regions on the transfer substrate.

[0060] In this step, patterning can be performed on only the metal layer 130 in the transfer substrate 200, or both the metal layer 130 and the epitaxial layer 140 in the transfer substrate 200 can be patterned. The general patterning process is as follows: First, a photoresist layer is coated on the metal layer 130 in the transfer substrate 200; then, the desired pattern is formed by exposure using a photomask; finally, the patterned area is formed on the metal layer 130 or on both the metal layer 130 and the epitaxial layer 140 by etching.

[0061] In this embodiment, a mask that patterns the transfer substrate 200 can be used to pattern the driving layer 120 in the driving substrate 100, or the driving layer 120 in the driving substrate 100 can be left unpatterned.

[0062] Step S13: Align and bond the metal layer in the patterned transfer substrate with the driving layer in the driving substrate to form a metal bonding area at the position corresponding to the pattern area.

[0063] In this step, pressure can be applied after aligning the metal layer 130 in the transfer substrate 200 with the driving layer 120 in the driving substrate 100, and the ambient temperature can be increased to accelerate metal bonding between the metal in the metal layer 130 and the metal in the driving layer 120. In this embodiment, the metal layers 130 corresponding to different metal bonding regions 1101 can have different film structures or the same film structure. When the metal layers 130 corresponding to different metal bonding regions 1101 have different film structures, the metal layers 130 corresponding to different metal bonding regions 1101 have the same film thickness. This design ensures that the metal layers 130 corresponding to different metal bonding regions in the transfer substrate 200 can all be bonded to the driving layer 120 in the driving substrate 100.

[0064] Step S14: The transfer substrate in the transfer substrate is peeled off from the epitaxial layer to expose the epitaxial layer.

[0065] In this step, different methods can be used to peel the transfer substrate 210 from the epitaxial layer 140 depending on the material of the transfer substrate 210. For example, taking a sapphire substrate as the transfer substrate 210, step S14 can be achieved as follows: based on the distance between the metal bonding regions 1101 and the geometric center of the wafer substrate 110, the epitaxial layers 140 corresponding to multiple metal bonding regions 1101 are sequentially irradiated with a laser in descending order of distance, thereby peeling the epitaxial layers 140 corresponding to the multiple metal bonding regions 1101 from the transfer substrate 210 one after another. Please refer again... Figure 3 The symmetry axis A1A2 passes through the geometric center of the wafer substrate. The epitaxial layer 140 in the first metal bonding region 1101 on the left can be peeled off first, followed by the epitaxial layer 140 in the first metal bonding region 1101 on the right, then the epitaxial layer 140 in the second metal bonding region 1101 on the right, then the epitaxial layer 140 in the second metal bonding region 1101 on the left, and finally the epitaxial layer 140 in the middle metal bonding region 1101. This peeling sequence balances the stress on the epitaxial layer 140 during the peeling process from the transfer substrate 210.

[0066] Step S15: Fabricate a display chip on the epitaxial layer corresponding to the metal bonding region to obtain the light-emitting device layer.

[0067] In this embodiment, if only the metal layer 130 in the transfer substrate 200 is patterned in step S12, a step of etching the epitaxial layer 140 to etch away the portion located outside the metal bonding region 1101 may be included before step S15.

[0068] In this step, different display chips can be fabricated in the light-emitting device layers 150 corresponding to different metal bonding regions 1101 as needed. For example, different display chips 1501 can be fabricated on the epitaxial layers 140 corresponding to different metal bonding regions 1101 to obtain light-emitting device layers 150 located in different metal bonding regions 1101. Here, different display chips 1501 refer to at least one difference in the density, size and structure of the display chips. When fabricating the light-emitting device layer 150, the fabrication can be carried out according to whether the structures of the display chips 1501 on different metal bonding regions 1101 are the same. For example, when the structures of the display chips 1501 on different metal bonding regions 1101 are the same, different display chips 1501 can be fabricated on the epitaxial layer 140 corresponding to different metal bonding regions 1101 by controlling the shape of the mask pattern (e.g., the opening shape or the opening density) in the mask corresponding to the different metal bonding regions 1101. Or, for example, when the structures of the display chips 1501 on different metal bonding regions 1101 are not the same, different display chips 1501 can be fabricated sequentially on the epitaxial layer 140 corresponding to different metal bonding regions 1101.

[0069] The display screen body and its fabrication method provided in this application include a wafer substrate with multiple metal bonding regions spaced apart from each other. The display screen body also includes a driving layer, a metal layer, an epitaxial layer, and a light-emitting device layer sequentially stacked on the wafer substrate. The light-emitting device layer includes multiple display chips, and the orthographic projections of the epitaxial layer and the light-emitting device layer onto the wafer substrate are located within the metal bonding regions. Different metal bonding regions contain independent epitaxial layers, making stress less likely to accumulate in the epitaxial layers. Compared to the prior art where the epitaxial layer is located throughout the entire wafer substrate, the structure of the epitaxial layer in this embodiment is more stable and less prone to damage, thus ensuring a higher yield for the display chips fabricated in the light-emitting device layer on the epitaxial layer.

[0070] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A display screen body, characterized in that, The display screen body includes a wafer substrate, the wafer substrate having a plurality of spaced-apart metal bonding regions; The display screen further includes a driving layer, a metal layer, an epitaxial layer, and a light-emitting device layer sequentially stacked on the wafer substrate. The metal layer is metal-bonded to the driving layer. The light-emitting device layer includes a display chip. The metal layer and the epitaxial layer are patterned structures formed by the same patterning process. The orthogonal projections of the epitaxial layer and the light-emitting device layer onto the wafer substrate are located in the metal bonding region.

2. The display screen body as described in claim 1, characterized in that, Each of the aforementioned metal bonding regions has the same shape and size; The sum of the areas of each of the metal bonding regions accounts for 65% to 85% of the area of ​​the wafer substrate.

3. The display screen body as described in claim 2, characterized in that, The plurality of said metal bonding regions are axially symmetrically distributed about the symmetry axis of the wafer substrate; or, The plurality of said metal bonding regions are centrally symmetrically distributed about the geometric center of said wafer substrate.

4. The display screen body as described in claim 3, characterized in that, The shape of the metal bonding region can be any one of a circle, rectangle, triangle, ellipse, or rhombus.

5. The display screen body as described in claim 4, characterized in that, The metal bonding region is circular in shape, and the plurality of metal bonding regions include a first metal bonding region whose center coincides with the geometric center of the wafer substrate, and a plurality of second metal bonding regions that are evenly distributed around the first metal bonding region and are equidistant from the first metal bonding region. The ratio of the diameter of the second metal bonding region to the distance between adjacent second metal bonding regions is 2:1 to 5:

1.

6. The display screen body as described in claim 4, characterized in that, The metal bonding region is rectangular in shape, and the plurality of metal bonding regions include at least one third metal bonding region whose geometric center is located on the axis of symmetry of the wafer substrate, and a plurality of fourth metal bonding regions located on both sides of the axis of symmetry of the wafer substrate and symmetrical with respect to the axis of symmetry.

7. The display screen body according to any one of claims 1-6, characterized in that, The orthographic projection of the metal layer on the wafer substrate is located in the metal bonding region, and the orthographic projection of the metal layer on the wafer substrate is located within the orthographic projection of the driving layer on the wafer substrate.

8. The display screen body according to any one of claims 1-6, characterized in that, In the light-emitting device layers corresponding to different metal bonding regions, at least one of the following three factors is different: the fabrication density of the display chip, the size of the display chip, and the structure of the display chip. The structure of the display chip includes a vertical structure, a forward-rotating structure, and a flip-chip structure.

9. A method for manufacturing a display screen, characterized in that, The method includes: A transfer substrate and a driving substrate are provided, wherein the transfer substrate includes a transfer substrate, an epitaxial layer and a metal layer stacked sequentially, and the driving substrate includes a wafer substrate and a driving layer located on the wafer substrate; The metal layer and epitaxial layer in the transfer substrate are patterned to form multiple spaced patterned regions on the transfer substrate. The metal layer in the patterned transfer substrate is aligned and bonded to the driving layer in the driving substrate to form a metal bonding area at the position corresponding to the patterned area. The transfer substrate in the transfer substrate is peeled off from the epitaxial layer to expose the epitaxial layer; A display chip is fabricated on the epitaxial layer corresponding to the metal bonding region to obtain a light-emitting device layer.

10. The method for manufacturing a display screen as described in claim 9, characterized in that, The transfer substrate is a sapphire substrate, and the step of peeling the transfer substrate from the epitaxial layer in the transfer substrate to expose the epitaxial layer includes: Based on the distance between the metal bonding region and the geometric center of the wafer substrate, the epitaxial layers corresponding to the multiple metal bonding regions are irradiated sequentially with laser in order of decreasing distance, and the epitaxial layers corresponding to the multiple metal bonding regions are peeled off from the transfer substrate one after another. The step of fabricating a display chip on the epitaxial layer corresponding to the metal bonding region to obtain a light-emitting device layer includes: Different display chips are fabricated on epitaxial layers corresponding to different metal bonding regions to obtain light-emitting device layers located in different metal bonding regions. The different display chips refer to at least one difference in the density, size, and structure of the display chips.

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