Method and apparatus for determining outgassing characteristics of materials inside a wafer-level vacuum-packaged device

Abstract

The application relates to a method and device for determining the outgassing characteristics of internal materials of wafer-level vacuum packaged devices. The method comprises the following steps: obtaining a first quality factor and a first resonant frequency of a test sample at a standard temperature; adjusting the temperature in a temperature test chamber, and obtaining a second quality factor and a second resonant frequency of the test sample at each test temperature under the condition that the test sample is placed in the temperature test chamber; determining the frequency variation amplitude of the test sample at each test temperature according to the first resonant frequency and the second resonant frequencies; determining the quality factor variation amplitude of the test sample at each test temperature according to the first quality factor and the second quality factors; and determining the outgassing characteristics of the internal materials of the test sample according to the frequency variation amplitude and the quality factor variation amplitude of the test sample at each test temperature. The method can accurately obtain the outgassing characteristics of the internal materials of wafer-level vacuum packaged devices.

Description

Technical Field

[0001] This application relates to the field of microelectromechanical systems (MEMS) packaging technology, and in particular to a method and apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices. Background Technology

[0002] With the development of micro-electro-mechanical systems (MEMS) packaging technology, wafer-level packaging technology has emerged. However, after wafer-level vacuum packaging of MEMS devices, the stability of the gas pressure inside the packaging cavity will fluctuate due to the release of gas from the material inside the cavity. Furthermore, the change in gas pressure inside the tiny cavity of the MEMS wafer-level hermetically sealed packaging will lead to the degradation of MEMS device performance.

[0003] High-temperature stress can cause gas outgassing within the wafer-level vacuum packaging cavity of MEMS devices, leading to performance drift and affecting device stability. To clarify the performance drift characteristics of vacuum-packaged MEMS devices at high temperatures, various technologies have been developed to address the testing needs for gas pressure and pressure changes within the micro-cavities of MEMS, such as quality factor monitoring, IR transmission, Raman spectroscopy, and residual gas analysis. However, quality factor monitoring derives the amount of gas outgassing caused by the wafer-level vacuum packaging process by measuring the pressure changes within the cavity; IR transmission and Raman spectroscopy obtain relevant information about the gas inside the cavity by testing its composition and quantity; and residual gas analysis obtains relevant information about the gas inside the cavity by puncturing the micro-cavity, sampling the gas, and then analyzing it using a mass spectrometer.

[0004] These methods all directly consider the outgassing of the internal materials, without taking into account other changes that occur in vacuum-sealed MEMS devices at high temperatures. For example, high temperatures can cause residual stress in the internal material structure and alter the structure's stiffness. Therefore, the test results of these methods on the outgassing characteristics of the internal material after vacuum sealing are inaccurate. Summary of the Invention

[0005] Therefore, it is necessary to provide a method and apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices to address the above-mentioned technical problems.

[0006] In a first aspect, this application provides a method for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices, including:

[0007] The first quality factor and first resonant frequency of the test sample at standard temperature were obtained; wherein the test sample was a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0008] With the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber.

[0009] The frequency variation amplitude of the test sample at each test temperature is determined based on the first resonant frequency and each of the second resonant frequencies.

[0010] Based on the first quality factor and each of the second quality factors, determine the range of factor variation of the test sample at each test temperature;

[0011] The outgassing characteristics of the internal materials of the test sample are determined based on the frequency variation amplitude and factor variation amplitude of the test sample at each test temperature.

[0012] In one embodiment, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber, including:

[0013] For each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; when the temperature of the temperature test chamber is stable at that test temperature, the quality factor and resonant frequency of the test sample are tested at least twice to obtain at least two quality factors and at least two resonant frequencies of the test sample at that test temperature; based on the at least two quality factors and at least two resonant frequencies of the test sample at that test temperature, the second quality factor and the second resonant frequency of the test sample at that test temperature are determined.

[0014] In one embodiment, determining the second quality factor and second resonant frequency of the test sample at the test temperature based on at least two quality factors and at least two resonant frequencies of the test sample at the test temperature includes:

[0015] The average of at least two quality factors of the test sample at the test temperature shall be taken as the second quality factor of the test sample at the test temperature; the average of at least two resonant frequencies of the test sample at the test temperature shall be taken as the second resonant frequency of the test sample at the test temperature.

[0016] In one embodiment, determining the frequency variation amplitude of the test sample at each test temperature based on the first resonant frequency and each of the second resonant frequencies includes:

[0017] For each test temperature, the frequency difference between the first resonant frequency and the second resonant frequency of the test sample at that test temperature is determined; the ratio of the frequency difference to the first resonant frequency is taken as the frequency variation amplitude of the test sample at that test temperature.

[0018] In one embodiment, the variation range of the factors of the test sample at each test temperature is determined based on the first quality factor and each of the second quality factors, including:

[0019] For each test temperature, determine the factor difference between the first quality factor and the second quality factor of the test sample at that test temperature; the ratio of the factor difference to the first quality factor is taken as the factor variation range of the test sample at that test temperature.

[0020] In one embodiment, the outgassing characteristics of the internal material of the test sample are determined based on the frequency variation amplitude and factor variation amplitude of the test sample at various test temperatures, including:

[0021] For each test temperature, the difference between the frequency change amplitude and the factor change amplitude of the test sample at that test temperature is taken as the new factor change amplitude of the test sample at that test temperature; based on the new factor change amplitude of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0022] Secondly, this application also provides a device for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices, comprising:

[0023] The first acquisition module is used to acquire the first quality factor and the first resonant frequency of the test sample at a standard temperature; wherein the test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0024] The second acquisition module is used to acquire the second quality factor and the second resonant frequency of the test sample at each test temperature by adjusting the temperature in the temperature test chamber when the test sample is placed in the temperature test chamber.

[0025] The first determining module is used to determine the frequency variation amplitude of the test sample at each test temperature based on the first resonant frequency and each of the second resonant frequencies.

[0026] The second determining module is used to determine the factor variation range of the test sample at each test temperature based on the first quality factor and each second quality factor.

[0027] The third determination module is used to determine the gas release characteristics of the internal materials of the test sample based on the frequency change amplitude and factor change amplitude of the test sample at each test temperature.

[0028] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0029] The first quality factor and first resonant frequency of the test sample at standard temperature were obtained; wherein the test sample was a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0030] With the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber.

[0031] The frequency variation amplitude of the test sample at each test temperature is determined based on the first resonant frequency and each of the second resonant frequencies.

[0032] Based on the first quality factor and each of the second quality factors, determine the range of factor variation of the test sample at each test temperature;

[0033] The outgassing characteristics of the internal materials of the test sample are determined based on the frequency variation amplitude and factor variation amplitude of the test sample at each test temperature.

[0034] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the following steps:

[0035] The first quality factor and first resonant frequency of the test sample at standard temperature were obtained; wherein the test sample was a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0036] With the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber.

[0037] The frequency variation amplitude of the test sample at each test temperature is determined based on the first resonant frequency and each of the second resonant frequencies.

[0038] Based on the first quality factor and each of the second quality factors, determine the range of factor variation of the test sample at each test temperature;

[0039] The outgassing characteristics of the internal materials of the test sample are determined based on the frequency variation amplitude and factor variation amplitude of the test sample at each test temperature.

[0040] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, performs the following steps:

[0041] The first quality factor and first resonant frequency of the test sample at standard temperature were obtained; wherein the test sample was a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0042] With the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber.

[0043] The frequency variation amplitude of the test sample at each test temperature is determined based on the first resonant frequency and each of the second resonant frequencies.

[0044] Based on the first quality factor and each of the second quality factors, determine the range of factor variation of the test sample at each test temperature;

[0045] The outgassing characteristics of the internal materials of the test sample are determined based on the frequency variation amplitude and factor variation amplitude of the test sample at each test temperature.

[0046] The aforementioned method and apparatus for determining the outgassing characteristics of internal materials in wafer-level vacuum-packaged devices analyze the first quality factor and the second quality factor of the test sample (i.e., the wafer-level vacuum-packaged microelectromechanical system MEMS device) at a standard temperature and at each test temperature to determine the factor variation amplitude of the test sample at each test temperature. Furthermore, by analyzing the first resonant frequency of the test sample at a standard temperature and the second resonant frequency at each test temperature, the frequency variation amplitude of the test sample at each test temperature can be determined. Since the frequency variation amplitude can characterize the changes in residual stress and structural stiffness at high temperatures, determining the outgassing characteristics of the internal materials of the test sample based on the frequency variation amplitude and factor variation amplitude can eliminate or mitigate the influence of changes in residual stress and structural stiffness at high temperatures on the quality factor, ultimately making the determination of the outgassing characteristics of internal materials in wafer-level vacuum-packaged devices more accurate. Attached Figure Description

[0047] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0048] Figure 1 This is a flowchart illustrating a method for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device provided in this application embodiment;

[0049] Figure 2 This is a schematic diagram of a process for obtaining the second quality factor and second resonant frequency of a test sample at various test temperatures, as provided in an embodiment of this application.

[0050] Figure 3 This is a schematic diagram of a process for determining the venting characteristics of internal materials provided in an embodiment of this application;

[0051] Figure 4 This is a flowchart illustrating another method for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device provided in this application embodiment;

[0052] Figure 5 This is a structural block diagram of a device for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device provided in this application embodiment;

[0053] Figure 6 This is a structural block diagram of another device for determining the outgassing characteristics of the internal material of a wafer-level vacuum packaging device provided in this application embodiment;

[0054] Figure 7 This is an internal structural diagram of a computer device provided in an embodiment of this application. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0056] Wafer-level packaging is an advanced packaging technology that has seen rapid development in recent years due to its advantages such as small size, excellent electrical performance, good heat dissipation, and low cost. However, after wafer-level vacuum packaging of MEMS devices, the stability of the internal pressure of the packaging cavity will fluctuate due to the release of gas from the internal materials. And the pressure changes in the tiny cavity of MEMS wafer-level hermetically sealed packaging can lead to the degradation of MEMS device performance.

[0057] High-temperature stress can cause gas release from the internal materials of MEMS wafer-level vacuum packaging cavities, and can also cause residual stress and changes in the structural stiffness of the internal materials, thereby causing performance drift of MEMS wafer-level vacuum packaging devices and affecting the stability of device performance.

[0058] Currently, various technologies are being researched to address the testing needs of gas pressure and pressure changes within microcavities of MEMS, such as quality factor monitoring, IR transmission, Raman spectroscopy, and residual gas analysis. However, these methods directly consider the outgassing of the internal materials and do not account for other changes that occur in vacuum-sealed MEMS devices at high temperatures, such as residual stress generated by the internal material structure and changes in structural stiffness. Therefore, the test results of these methods for the outgassing characteristics of the internal materials after vacuum sealing are inaccurate.

[0059] Based on this, in order to more accurately test the gas release characteristics of the internal material after vacuum packaging, this application provides a method for determining the gas release characteristics of the internal material of a wafer-level vacuum-packaged device, which can be applied to computer equipment, such as a server or a terminal with powerful computing capabilities.

[0060] It should be noted that, before detailing the embodiments of this application, the resonant frequency introduced in the embodiments of this application will be explained using a wafer-level vacuum-packaged capacitive Z-axis dual decoupled tuning fork gyroscope as an example of the internal structure of the MEMS device.

[0061] The structure of a capacitive Z-axis dual-decoupled tuning fork gyroscope is typically fabricated using SOG (Spin-On Glass) technology. Its driving mode includes driving comb teeth and driving-detecting comb teeth for closed-loop drive control; the detection mode includes detection comb teeth and force feedback comb teeth for detection-based closed-loop control; and the mode matching comb teeth are used for real-time mode matching control. The natural frequency w of the structure's driving mode... d and the natural frequency w of the detection mode s It can be represented as:

[0062] (1)

[0063] (2)

[0064] Where, m d k d To drive the mass and stiffness of the mode, m s k s To detect the quality and stiffness of the modal.

[0065] Damping ratio of driving mode Damping ratio of the detection mode It can be represented as:

[0066] (3)

[0067] (4)

[0068] Among them, c d and c s These are the damping force coefficients for the driving mode and the detection mode, respectively.

[0069] Quality factor Q of the driving mode d And the quality factor Q of the detection mode s It can be represented as:

[0070] (5)

[0071] (6)

[0072] As can be seen from formulas (1) and (2), the natural frequency of a structure is mainly determined by its stiffness and mass. The stiffness, however, is affected by residual stress within the structure. For example, in the bonding process of MEMS wafer-level vacuum packaging, after bonding at high temperatures, when the device structure's temperature returns to room temperature, residual stress will be generated in the structure due to the mismatch in the thermal expansion coefficients of the heterogeneous materials at the bonding interface, thus affecting the structure's stiffness. For instance, the presence of tensile residual stress in the structure will lead to an increase in the structure's stiffness, thereby increasing its natural frequency.

[0073] From formulas (3) to (6), it can be seen that the quality factor is represented by the damping ratio, which can be represented by the natural frequency and the damping force coefficient. The change in the damping force coefficient mainly comes from the change in the gas pressure inside the vacuum-sealed cavity. The higher the gas pressure, the greater the damping force coefficient. Therefore, the high-temperature bonding in the wafer-level vacuum sealing process may cause gas release of the material inside the cavity, which in turn leads to an increase in the cavity gas pressure, an increase in the damping force coefficient, and finally a decrease in the quality factor. At the same time, it can also be seen that the change in the natural frequency of the structure will also cause a change in the quality factor. With the increase of tensile residual stress, the natural frequency of the structure will also increase under the same gas pressure environment.

[0074] Therefore, changes in both the natural frequency and the damping coefficient will cause changes in the quality factor. Specifically, changes in residual stress and structural stiffness both lead to changes in the structure's natural frequency; while changes in the damping coefficient mainly originate from changes in the internal gas pressure of the vacuum-sealed cavity—the higher the gas pressure, the larger the damping coefficient. Thus, changes in residual stress, structural stiffness, and the internal gas pressure of the vacuum-sealed cavity all cause changes in the quality factor. To determine the outgassing characteristics of the internal materials of the vacuum-sealed device, embodiments of this application introduce frequency to eliminate or reduce the impact of changes in residual stress and structural stiffness on the quality factor.

[0075] Figure 1 This is a flowchart illustrating a method for determining the outgassing characteristics of internal materials in a wafer-level vacuum packaging device, as provided in this application embodiment. The method is explained using an example of it being executed by a server. Figure 1 As shown, the method for determining the outgassing characteristics of the internal material of this wafer-level vacuum packaging device includes the following steps S101 to S105. Wherein:

[0076] S101, obtain the first quality factor and first resonant frequency of the test sample at standard temperature.

[0077] The test samples are wafer-level vacuum-packaged microelectromechanical systems (MEMS) devices. The standard temperature is a temperature set to standardize the test measurement conditions, allowing for comparison with the test temperature; optionally, in this embodiment, the standard temperature can be room temperature (i.e., 25°C). The quality factor is a characteristic parameter characterizing the outgassing properties of the internal material of the wafer-level vacuum-packaged device; the resonant frequency refers to the vibration frequency of the internal material of the wafer-level vacuum-packaged device during the test.

[0078] For example, the test sample is placed on the test circuit board and the test circuit board is connected to the test instrument; at the standard temperature, the quality factor and resonant frequency of the test sample are tested by controlling the test instrument, and then the first quality factor Q1 and the first resonant frequency W1 of the test sample at the standard temperature can be obtained from the test instrument.

[0079] S102, with the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber.

[0080] For example, a test circuit board containing the test sample is fixed in a temperature test chamber, and the electrical leads of the test circuit board are connected and led out to the outside of the temperature test chamber and connected to an external power supply and related testing instruments; then, the test sample can be tested at various test temperatures by controlling the testing instruments.

[0081] For example, there are n test temperatures, namely T1, T2, ..., Tn. n The relationship between the test temperatures is T1. <T1<…<T n In this embodiment, the temperature of the temperature test chamber can be adjusted sequentially in ascending order. During the test, for each test temperature, the test sample is tested using a testing instrument to determine the second quality factor Q2 and the second resonant frequency W2 of the test sample at that test temperature. After all test temperatures are tested, n second quality factors Q2 and n second resonant frequencies W2 are obtained.

[0082] S103, based on the first resonant frequency and each of the second resonant frequencies, determine the frequency variation amplitude of the test sample at each test temperature.

[0083] Specifically, for each test temperature, the frequency change amplitude is the ratio of the increase or decrease of the second resonant frequency value at that test temperature compared to the first resonant frequency value at the standard temperature. Optionally, for each test temperature, the frequency difference between the first resonant frequency and the second resonant frequency of the test sample at that test temperature is determined; the ratio of the frequency difference to the first resonant frequency is taken as the frequency change amplitude of the test sample at that test temperature. That is, frequency change amplitude = (|second resonant frequency value - first resonant frequency value|) / first resonant frequency value * 100%.

[0084] For example, complete all test temperatures (T1, T2, ..., T1). n After testing, the first resonant frequency W1 at the standard temperature and the second resonant frequency W2 at each test temperature are obtained. The difference between the first resonant frequency W1 and each second resonant frequency W2 is calculated as |W1 - W2|, resulting in n frequency differences; one test temperature corresponds to one frequency difference. The ratio of each frequency difference to the first resonant frequency is taken as the frequency variation amplitude at each test temperature, i.e., f. w = (W2 - W1) / W1.

[0085] S104. Based on the first quality factor and each of the second quality factors, determine the range of factor variation of the test sample at each test temperature.

[0086] Specifically, for each test temperature, the factor change amplitude at that test temperature is the ratio of increase or decrease of the second quality factor value at that test temperature compared to the first quality factor value at the standard temperature. Optionally, for each test temperature, the factor difference between the first quality factor and the second quality factor of the test sample at that test temperature is determined; the ratio of the factor difference to the first quality factor is taken as the factor change amplitude of the test sample at that test temperature. That is, factor change amplitude = (|second quality factor value - first quality factor value|) / first quality factor value * 100%.

[0087] For example, complete all test temperatures (T1, T2, ..., T1). n After testing, the first quality factor Q1 at the standard temperature and the second quality factor Q2 at each test temperature are obtained. The difference between the first quality factor Q1 and each second quality factor Q2 is calculated as |Q1 - Q2|, resulting in n factor differences; one factor difference corresponds to one test temperature. The ratio of each factor difference to the first quality factor is taken as the factor variation amplitude at each test temperature, i.e., f. Q = (Q2 - Q1) / Q1.

[0088] S105, determine the gas release characteristics of the internal material of the test sample based on the frequency change amplitude and factor change amplitude of the test sample at each test temperature.

[0089] For example, after obtaining the frequency variation amplitude and factor variation amplitude of the test sample at each test temperature, the frequency variation amplitude can be removed from the factor variation amplitude to eliminate or reduce the influence of residual stress and structural stiffness on the quality factor, thereby achieving accurate calculation of the quality factor change caused by material outgassing and thus accurately determining the outgassing characteristics of the internal material of the test sample.

[0090] The aforementioned method for determining the outgassing characteristics of the internal materials of wafer-level vacuum-packaged devices analyzes the first quality factor and the second quality factor of the test sample (i.e., the wafer-level vacuum-packaged microelectromechanical system MEMS device) at a standard temperature and at each test temperature to determine the factor variation amplitude of the test sample at each test temperature. Furthermore, by analyzing the first resonant frequency of the test sample at the standard temperature and the second resonant frequency at each test temperature, the frequency variation amplitude of the test sample at each test temperature can be determined. Since the frequency variation amplitude can characterize the changes in residual stress and structural stiffness at high temperatures, determining the outgassing characteristics of the internal materials of the test sample based on the frequency variation amplitude and factor variation amplitude can eliminate or mitigate the influence of changes in residual stress and structural stiffness at high temperatures on the quality factor, ultimately making the determination of the outgassing characteristics of the internal materials of wafer-level vacuum-packaged devices more accurate.

[0091] In one exemplary embodiment, such as Figure 2 As shown, by adjusting the temperature in the temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained, including S201 to S203. Wherein:

[0092] S201, for each test temperature, adjust the temperature in the temperature test chamber to that test temperature.

[0093] For example, for each test temperature, a temperature adjustment command including that test temperature can be issued to the temperature test chamber so that the temperature test chamber adjusts its temperature to that test temperature.

[0094] S202, with the temperature of the temperature test chamber stable at the test temperature, the quality factor and resonant frequency of the test sample are tested at least twice to obtain at least two quality factors and at least two resonant frequencies of the test sample at the test temperature.

[0095] Taking test temperature T1 as an example, after the temperature of the test chamber stabilizes at the test temperature T1, the temperature of the test chamber is kept constant at T1 for a holding time of Δh (generally, 0h < Δh ≤ 24h). During the temperature holding period, the test sample is tested multiple times using testing instruments to obtain the characteristic parameters of the test sample at the test temperature T1. For example, if the test sample is tested 3 times during the temperature holding period, the characteristic parameters of the test sample are tested according to the average time interval (time interval = holding time / n, where n is the number of tests), and finally, the three quality factors and three resonant frequencies of the test sample at the test temperature T1 are obtained.

[0096] S203, based on at least two quality factors and at least two resonant frequencies of the test sample at the test temperature, determine the second quality factor and the second resonant frequency of the test sample at the test temperature.

[0097] Taking test temperature T1 as an example, the test sample is tested three times at an average time interval at test temperature T1. The resulting three quality factors and three resonant frequencies can be used as the second quality factor Q2 of the test sample at test temperature T1, or the maximum (or minimum) value of the three quality factors can be used as the second quality factor Q2 of the test sample at test temperature T1. The second resonant frequency W2 of the test sample at test temperature T1 is determined in the same way.

[0098] To ensure the accuracy of the test, the average of at least two quality factors of the test sample at the test temperature can be used as the second quality factor of the test sample at that test temperature; the average of at least two resonant frequencies of the test sample at the test temperature can be used as the second resonant frequency of the test sample at that test temperature. For example, the averages of the three quality factors and three resonant frequencies can be taken respectively, and the obtained averages can be used as the second quality factor Q2 and the second resonant frequency W2 of the test sample at the test temperature T1.

[0099] In this embodiment, by conducting multiple tests on the test sample, the accuracy of the second quality factor and the second resonant frequency is improved, thereby making the determination of the gas release characteristics of the internal material of the vacuum-sealed device more accurate.

[0100] In one exemplary embodiment, such as Figure 3 As shown, based on the frequency variation amplitude and factor variation amplitude of the test sample at each test temperature, the outgassing characteristics of the internal material of the test sample are determined, including S301 to S302. Wherein:

[0101] S301, for each test temperature, the difference between the frequency change amplitude and the factor change amplitude of the test sample at that test temperature is taken as the new factor change amplitude of the test sample at that test temperature.

[0102] Taking test temperature T1 as an example, the difference between the factor change amplitude |Q1-Q2| / Q1 and the frequency change amplitude |W1-W2| / W1 at test temperature T1 is calculated as |(|Q1-Q2| / Q1)-(|W1-W2| / W1)|, which gives the new factor change amplitude of the test sample at test temperature T1.

[0103] S302, based on the new factor change range of the test sample at each test temperature, determine the gas release characteristics of the internal material of the test sample.

[0104] For example, based on the new factor change range of the test sample at each test temperature, multiple sets of correspondences between temperature and new factor change range can be obtained, and then a curve with temperature as the horizontal axis and new factor change range as the vertical axis can be obtained; the curve is used to describe the gas release characteristics of the internal material of the test sample.

[0105] In this embodiment, by subtracting the frequency variation amplitude, the influence of residual stress and stiffness changes at high temperature on the quality factor variation amplitude is eliminated, and the quality factor change caused by the gas release of the internal material of the test sample is obtained, thereby inferring the gas release characteristics of the internal material of the wafer-level vacuum packaging device.

[0106] Based on the above embodiments, this embodiment provides an optional example of a method for determining the outgassing characteristics of internal materials in wafer-level vacuum packaging devices. For example... Figure 4 As shown, the specific implementation process is as follows:

[0107] S401, obtain the first quality factor and first resonant frequency of the test sample at standard temperature.

[0108] The test samples were microelectromechanical systems (MEMS) devices in wafer-level vacuum packaging.

[0109] S402, with the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber.

[0110] Optionally, for each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; with the temperature of the temperature test chamber stable at that test temperature, the quality factor and resonant frequency of the test sample are tested at least twice to obtain at least two quality factors and at least two resonant frequencies of the test sample at that test temperature; the average of the at least two quality factors of the test sample at that test temperature is taken as the second quality factor of the test sample at that test temperature; the average of the at least two resonant frequencies of the test sample at that test temperature is taken as the second resonant frequency of the test sample at that test temperature.

[0111] S403, determine the frequency difference between the first resonant frequency and the second resonant frequency of the test sample at each test temperature.

[0112] S404, the ratio between each frequency difference and the first resonant frequency is used as the frequency variation amplitude of the test sample at each test temperature.

[0113] S405, determine the factor difference between the first quality factor and the second quality factor of the test sample at each test temperature.

[0114] S406, the ratio between the differences of each factor and the first quality factor is used as the factor variation range of the test sample at each test temperature.

[0115] S407, the difference between the frequency variation amplitude and the factor variation amplitude of the test sample at each test temperature is taken as the new factor variation amplitude of the test sample at each test temperature.

[0116] S408, based on the new factor change range of the test sample at each test temperature, determine the gas release characteristics of the internal material of the test sample.

[0117] The specific processes of S401-S408 described above can be referred to the description of the above method embodiments. Their implementation principles and technical effects are similar, and will not be repeated here.

[0118] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0119] Based on the same inventive concept, this application also provides an apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices, used to implement the method for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices described above. The solution provided by this apparatus is similar to the solution described in the above method. Therefore, the specific limitations of one or more embodiments of the apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices provided below can be found in the limitations of the characteristic determination method above, and will not be repeated here.

[0120] In one exemplary embodiment, such as Figure 5 As shown, a device 1 for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device is provided, comprising: a first acquisition module 10, a second acquisition module 20, a first determination module 30, a second determination module 40, and a third determination module 50, wherein:

[0121] The first acquisition module 10 is used to acquire the first quality factor and the first resonant frequency of the test sample at a standard temperature; wherein the test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging.

[0122] The second acquisition module 20 is used to acquire the second quality factor and the second resonant frequency of the test sample at each test temperature by adjusting the temperature in the temperature test chamber when the test sample is placed in the temperature test chamber.

[0123] The first determining module 30 is used to determine the frequency change amplitude of the test sample at each test temperature based on the first resonant frequency and each of the second resonant frequencies.

[0124] The second determining module 40 is used to determine the factor variation range of the test sample at each test temperature based on the first quality factor and each second quality factor.

[0125] The third determining module 50 is used to determine the gas release characteristics of the internal material of the test sample based on the frequency change amplitude and factor change amplitude of the test sample at each test temperature.

[0126] In one embodiment, such as Figure 6 As shown, the second acquisition module 20 includes:

[0127] Temperature control unit 21 is used to adjust the temperature in the temperature test chamber to the test temperature for each test temperature;

[0128] The parameter acquisition unit 22 is used to perform at least two tests on the quality factor and resonant frequency of the test sample when the temperature of the temperature test chamber is stable at the test temperature, so as to obtain at least two quality factors and at least two resonant frequencies of the test sample at the test temperature.

[0129] The parameter determination unit 23 is used to determine the second quality factor and the second resonant frequency of the test sample at the test temperature based on at least two quality factors and at least two resonant frequencies of the test sample at the test temperature.

[0130] In one embodiment, the parameter determination unit 23 is specifically used for:

[0131] The average of at least two quality factors of the test sample at the test temperature shall be taken as the second quality factor of the test sample at the test temperature; the average of at least two resonant frequencies of the test sample at the test temperature shall be taken as the second resonant frequency of the test sample at the test temperature.

[0132] In one embodiment, the first determining module 30 is specifically used for:

[0133] For each test temperature, the frequency difference between the first resonant frequency and the second resonant frequency of the test sample at that test temperature is determined; the ratio of the frequency difference to the first resonant frequency is taken as the frequency variation amplitude of the test sample at that test temperature.

[0134] In one embodiment, the second determining module 40 is specifically used for:

[0135] For each test temperature, determine the factor difference between the first quality factor and the second quality factor of the test sample at that test temperature; the ratio of the factor difference to the first quality factor is taken as the factor variation range of the test sample at that test temperature.

[0136] In one embodiment, the third determining module 50 is specifically used for:

[0137] For each test temperature, the difference between the frequency change amplitude and the factor change amplitude of the test sample at that test temperature is taken as the new factor change amplitude of the test sample at that test temperature; based on the new factor change amplitude of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0138] The various modules in the aforementioned device for determining the outgassing characteristics of the internal material of a wafer-level vacuum-sealed device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device, or stored in the memory of a computer device as software, so that the processor can call and execute the operations corresponding to each module.

[0139] In one exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 7As shown, the computer device includes a processor, memory, input / output (I / O) interfaces, and a communication interface. The processor, memory, and I / O interfaces are connected via a system bus, and the communication interface is also connected to the system bus via the I / O interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and a database. The internal memory provides the environment for the operation of the operating system and computer programs in the non-volatile storage media. The database stores experimental data. The I / O interfaces are used for exchanging information between the processor and external devices. The communication interface is used for communication with external terminals via a network connection. When executed by the processor, the computer program implements a method for determining the outgassing characteristics of the internal material of a wafer-level vacuum-sealed device.

[0140] Those skilled in the art will understand that Figure 7 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0141] In one exemplary embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0142] The first quality factor and first resonant frequency of the test sample at standard temperature were obtained; wherein the test sample was a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0143] With the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber.

[0144] The frequency variation amplitude of the test sample at each test temperature is determined based on the first resonant frequency and each of the second resonant frequencies.

[0145] Based on the first quality factor and each of the second quality factors, determine the range of factor variation of the test sample at each test temperature;

[0146] The outgassing characteristics of the internal materials of the test sample are determined based on the frequency variation amplitude and factor variation amplitude of the test sample at each test temperature.

[0147] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0148] For each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; when the temperature of the temperature test chamber is stable at that test temperature, the quality factor and resonant frequency of the test sample are tested at least twice to obtain at least two quality factors and at least two resonant frequencies of the test sample at that test temperature; based on the at least two quality factors and at least two resonant frequencies of the test sample at that test temperature, the second quality factor and the second resonant frequency of the test sample at that test temperature are determined.

[0149] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0150] The average of at least two quality factors of the test sample at the test temperature shall be taken as the second quality factor of the test sample at the test temperature; the average of at least two resonant frequencies of the test sample at the test temperature shall be taken as the second resonant frequency of the test sample at the test temperature.

[0151] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0152] For each test temperature, the frequency difference between the first resonant frequency and the second resonant frequency of the test sample at that test temperature is determined; the ratio of the frequency difference to the first resonant frequency is taken as the frequency variation amplitude of the test sample at that test temperature.

[0153] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0154] For each test temperature, determine the factor difference between the first quality factor and the second quality factor of the test sample at that test temperature; the ratio of the factor difference to the first quality factor is taken as the factor variation range of the test sample at that test temperature.

[0155] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0156] For each test temperature, the difference between the frequency change amplitude and the factor change amplitude of the test sample at that test temperature is taken as the new factor change amplitude of the test sample at that test temperature; based on the new factor change amplitude of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0157] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0158] The first quality factor and first resonant frequency of the test sample at standard temperature were obtained; wherein the test sample was a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0159] With the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber.

[0160] The frequency variation amplitude of the test sample at each test temperature is determined based on the first resonant frequency and each of the second resonant frequencies.

[0161] Based on the first quality factor and each of the second quality factors, determine the range of factor variation of the test sample at each test temperature;

[0162] The outgassing characteristics of the internal materials of the test sample are determined based on the frequency variation amplitude and factor variation amplitude of the test sample at each test temperature.

[0163] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0164] For each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; when the temperature of the temperature test chamber is stable at that test temperature, the quality factor and resonant frequency of the test sample are tested at least twice to obtain at least two quality factors and at least two resonant frequencies of the test sample at that test temperature; based on the at least two quality factors and at least two resonant frequencies of the test sample at that test temperature, the second quality factor and the second resonant frequency of the test sample at that test temperature are determined.

[0165] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0166] The average of at least two quality factors of the test sample at the test temperature shall be taken as the second quality factor of the test sample at the test temperature; the average of at least two resonant frequencies of the test sample at the test temperature shall be taken as the second resonant frequency of the test sample at the test temperature.

[0167] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0168] For each test temperature, the frequency difference between the first resonant frequency and the second resonant frequency of the test sample at that test temperature is determined; the ratio of the frequency difference to the first resonant frequency is taken as the frequency variation amplitude of the test sample at that test temperature.

[0169] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0170] For each test temperature, determine the factor difference between the first quality factor and the second quality factor of the test sample at that test temperature; the ratio of the factor difference to the first quality factor is taken as the factor variation range of the test sample at that test temperature.

[0171] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0172] For each test temperature, the difference between the frequency change amplitude and the factor change amplitude of the test sample at that test temperature is taken as the new factor change amplitude of the test sample at that test temperature; based on the new factor change amplitude of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0173] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, performs the following steps:

[0174] The first quality factor and first resonant frequency of the test sample at standard temperature were obtained; wherein the test sample was a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0175] With the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber.

[0176] The frequency variation amplitude of the test sample at each test temperature is determined based on the first resonant frequency and each of the second resonant frequencies.

[0177] Based on the first quality factor and each of the second quality factors, determine the range of factor variation of the test sample at each test temperature;

[0178] The outgassing characteristics of the internal materials of the test sample are determined based on the frequency variation amplitude and factor variation amplitude of the test sample at each test temperature.

[0179] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0180] For each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; when the temperature of the temperature test chamber is stable at that test temperature, the quality factor and resonant frequency of the test sample are tested at least twice to obtain at least two quality factors and at least two resonant frequencies of the test sample at that test temperature; based on the at least two quality factors and at least two resonant frequencies of the test sample at that test temperature, the second quality factor and the second resonant frequency of the test sample at that test temperature are determined.

[0181] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0182] The average of at least two quality factors of the test sample at the test temperature shall be taken as the second quality factor of the test sample at the test temperature; the average of at least two resonant frequencies of the test sample at the test temperature shall be taken as the second resonant frequency of the test sample at the test temperature.

[0183] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0184] For each test temperature, the frequency difference between the first resonant frequency and the second resonant frequency of the test sample at that test temperature is determined; the ratio of the frequency difference to the first resonant frequency is taken as the frequency variation amplitude of the test sample at that test temperature.

[0185] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0186] For each test temperature, determine the factor difference between the first quality factor and the second quality factor of the test sample at that test temperature; the ratio of the factor difference to the first quality factor is taken as the factor variation range of the test sample at that test temperature.

[0187] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0188] For each test temperature, the difference between the frequency change amplitude and the factor change amplitude of the test sample at that test temperature is taken as the new factor change amplitude of the test sample at that test temperature; based on the new factor change amplitude of the test sample at each test temperature, the gas release characteristics of the internal material of the test sample are determined.

[0189] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0190] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0191] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for determining the outgassing characteristics of internal materials in a wafer-level vacuum-packaged device, characterized in that, The method includes: The first quality factor and first resonant frequency of the test sample at a standard temperature are obtained; wherein the test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device. With the test sample placed in a temperature test chamber, the second quality factor and second resonant frequency of the test sample at each test temperature are obtained by adjusting the temperature in the temperature test chamber. The frequency variation amplitude of the test sample at each test temperature is determined based on the first resonant frequency and each of the second resonant frequencies. Based on the first quality factor and each of the second quality factors, determine the variation range of the quality factor of the test sample at each test temperature; For each test temperature, the difference between the frequency variation amplitude and the quality factor variation amplitude of the test sample at that test temperature is taken as the new quality factor variation amplitude of the test sample at that test temperature; based on the new quality factor variation amplitude of the test sample at each test temperature, the outgassing characteristics of the internal material of the test sample are determined.

2. The method according to claim 1, characterized in that, The step of obtaining the second quality factor and second resonant frequency of the test sample at various test temperatures by adjusting the temperature in the temperature test chamber includes: For each test temperature, adjust the temperature in the temperature test chamber to that test temperature; With the temperature of the temperature test chamber stable at the test temperature, the quality factor and resonant frequency of the test sample are tested at least twice to obtain at least two quality factors and at least two resonant frequencies of the test sample at the test temperature. Based on at least two quality factors and at least two resonant frequencies of the test sample at the test temperature, determine the second quality factor and the second resonant frequency of the test sample at the test temperature.

3. The method according to claim 2, characterized in that, The step of determining the second quality factor and second resonant frequency of the test sample at the test temperature based on at least two quality factors and at least two resonant frequencies of the test sample at the test temperature includes: The average of at least two quality factors of the test sample at the test temperature is taken as the second quality factor of the test sample at the test temperature. The average of at least two resonant frequencies of the test sample at the test temperature is taken as the second resonant frequency of the test sample at the test temperature.

4. The method according to claim 1, characterized in that, The step of determining the frequency variation amplitude of the test sample at each test temperature based on the first resonant frequency and each of the second resonant frequencies includes: For each test temperature, determine the frequency difference between the first resonant frequency and the second resonant frequency of the test sample at that test temperature; The ratio between the frequency difference and the first resonant frequency is taken as the frequency change amplitude of the test sample at the test temperature.

5. The method according to claim 1, characterized in that, The step of determining the variation range of the quality factor of the test sample at each test temperature based on the first quality factor and each of the second quality factors includes: For each test temperature, determine the factor difference between the first quality factor and the second quality factor of the test sample at that test temperature; The ratio between the factor difference and the first quality factor is taken as the magnitude of the quality factor change of the test sample at the test temperature.

6. The method according to claim 1, characterized in that, The step of determining the outgassing characteristics of the internal material of the test sample based on the new quality factor changes of the test sample at various test temperatures includes: Based on the new factor change range of the test sample at each test temperature, a curve is obtained with test temperature as the horizontal axis and the new factor change range as the vertical axis. The curve is used to describe the gas release characteristics of the internal material of the test sample.

7. A device for determining the outgassing characteristics of internal materials of a wafer-level vacuum-packaged device, characterized in that, The device includes: The first acquisition module is used to acquire the first quality factor and the first resonant frequency of the test sample at a standard temperature; wherein the test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device. The second acquisition module is used to acquire the second quality factor and the second resonant frequency of the test sample at each test temperature by adjusting the temperature in the temperature test chamber when the test sample is placed in the temperature test chamber. The first determining module is used to determine the frequency variation amplitude of the test sample at each test temperature based on the first resonant frequency and each of the second resonant frequencies; The second determining module is used to determine the variation range of the quality factor of the test sample at each test temperature based on the first quality factor and each second quality factor. The third determining module is used to, for each test temperature, take the difference between the frequency change amplitude and the quality factor change amplitude of the test sample at that test temperature as the new quality factor change amplitude of the test sample at that test temperature; and determine the outgassing characteristics of the internal material of the test sample based on the new quality factor change amplitude of the test sample at each test temperature.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

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