Method and apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum-packaged devices

Abstract

This application relates to a method and apparatus for determining the outgassing characteristics of internal materials in wafer-level vacuum-packaged devices. The method includes: with the original test sample placed in a temperature test chamber, adjusting the temperature of the test chamber to obtain a first quality factor of the original test sample at each test temperature; wherein the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device; with an open-hole test sample placed in a vacuum chamber at a target pressure, adjusting the temperature of the vacuum chamber to obtain a second quality factor of the open-hole test sample at each test temperature; and determining the outgassing characteristics of the internal materials of the original test sample based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature. This method can accurately obtain the outgassing characteristics of internal materials in wafer-level vacuum-packaged devices.

Description

Technical Field

[0001] This application relates to the field of microelectromechanical systems (MEMS) packaging technology, and in particular to a method and apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices. Background Technology

[0002] With the development of Micro-Electro-Mechanical Systems (MEMS) packaging technology, wafer-level packaging technology has emerged. However, after wafer-level vacuum packaging of MEMS devices, the stability of the internal pressure of the packaging cavity fluctuates due to the outgassing of the internal materials. These pressure variations within the tiny cavities of the wafer-level hermetically sealed MEMS devices can lead to performance degradation. Therefore, accurately assessing the outgassing characteristics of the internal materials of wafer-level vacuum-packaged devices is crucial.

[0003] High-temperature stress can cause gas outgassing within the wafer-level vacuum packaging cavity of MEMS devices, leading to performance drift and affecting device stability. To clarify the performance drift characteristics of vacuum-packaged MEMS devices at high temperatures, various technologies have been developed to address the testing needs for gas pressure and pressure changes within the micro-cavities of MEMS, such as quality factor monitoring, IR transmission, Raman spectroscopy, and residual gas analysis. However, quality factor monitoring derives the amount of gas outgassing caused by the wafer-level vacuum packaging process by measuring the pressure changes within the cavity; IR transmission and Raman spectroscopy obtain relevant information about the gas inside the cavity by testing its composition and quantity; and residual gas analysis obtains relevant information about the gas inside the cavity by puncturing the micro-cavity, sampling the gas, and then analyzing it using a mass spectrometer.

[0004] These methods all directly consider the outgassing of the internal materials, without taking into account other changes that occur in vacuum-sealed MEMS devices at high temperatures. For example, high temperatures can cause residual stress in the internal material structure and alter the structure's stiffness. Therefore, the test results of these methods on the outgassing characteristics of the internal material after vacuum sealing are inaccurate. Summary of the Invention

[0005] Therefore, it is necessary to provide a method and apparatus for determining the outgassing characteristics of the internal material of a wafer-level vacuum packaging device, which can accurately determine the outgassing characteristics of the internal material of the vacuum packaging device cavity, in order to address the above-mentioned technical problems.

[0006] In a first aspect, this application provides a method for determining the outgassing characteristics of internal materials of wafer-level vacuum-packaged devices, including:

[0007] With the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature was obtained by adjusting the temperature in the temperature test chamber; wherein, the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0008] With the perforation test sample placed in a vacuum chamber and the air pressure in the vacuum chamber at the target air pressure, the second quality factor of the perforation test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber. The perforation test sample is obtained by perforating the original test sample. The target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforation test sample in the vacuum chamber is the standard quality factor.

[0009] Based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0010] In one embodiment, the first quality factor of the original test sample at each test temperature is obtained by adjusting the temperature in the temperature test chamber, including:

[0011] For each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; with the temperature of the temperature test chamber stable at that test temperature, the quality factor of the original test sample is tested at least twice to obtain at least two quality factors of the original test sample at that test temperature; based on the at least two quality factors of the original test sample at that test temperature, the first quality factor of the original test sample at that test temperature is determined.

[0012] In one embodiment, the second quality factor of the opening test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber device, including:

[0013] For each test temperature, the temperature in the vacuum chamber is adjusted to that test temperature; with the temperature of the vacuum chamber stable at that test temperature, the quality factor of the opening test sample is tested at least twice to obtain at least two quality factors of the opening test sample at that test temperature; based on the at least two quality factors of the opening test sample at that test temperature, the second quality factor of the opening test sample at that test temperature is determined.

[0014] In one embodiment, the outgassing characteristics of the internal material of the original test sample are determined based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-pore test sample at each test temperature, including:

[0015] For each test temperature, the difference between the first quality factor of the original test sample at that test temperature and the second quality factor of the open-hole test sample at that test temperature is taken as the new quality factor of the original test sample at that test temperature; based on the new quality factor of the original test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0016] In one embodiment, the outgassing characteristics of the internal materials of the original test sample are determined based on the new quality factors of the original test sample at various test temperatures, including:

[0017] Based on the new quality factors of the original test sample at various test temperatures, construct the relationship curve between temperature and quality factor; based on the relationship curve, determine the outgassing characteristics of the internal materials of the original test sample.

[0018] In one embodiment, the method further includes:

[0019] With the opening test sample placed in the vacuum chamber, the temperature in the vacuum chamber is adjusted to the standard temperature. Once the temperature in the vacuum chamber is stable at the standard temperature, the gas pressure in the vacuum chamber is adjusted, and the quality factor of the opening test sample is detected. When the quality factor of the opening test sample is detected to be the standard quality factor, the gas pressure in the vacuum chamber is taken as the target gas pressure.

[0020] In one embodiment, the standard quality factor is the quality factor of the original test sample at a standard temperature.

[0021] Secondly, this application also provides a device for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices, comprising:

[0022] The first acquisition module is used to acquire the first quality factor of the original test sample at each test temperature by adjusting the temperature in the temperature test chamber when the original test sample is placed in the temperature test chamber; wherein the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0023] The second acquisition module is used to acquire the second quality factor of the perforated test sample at each test temperature by adjusting the temperature in the vacuum chamber when the perforated test sample is placed in the vacuum chamber and the air pressure in the vacuum chamber is the target air pressure; wherein, the perforated test sample is obtained by perforating the original test sample; the target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforated test sample in the vacuum chamber is the standard quality factor;

[0024] The determination module is used to determine the outgassing characteristics of the internal material of the original test sample based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature.

[0025] Thirdly, this application also provides a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0026] With the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature was obtained by adjusting the temperature in the temperature test chamber; wherein, the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0027] With the perforation test sample placed in a vacuum chamber and the air pressure in the vacuum chamber at the target air pressure, the second quality factor of the perforation test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber. The perforation test sample is obtained by perforating the original test sample. The target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforation test sample in the vacuum chamber is the standard quality factor.

[0028] Based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0029] Fourthly, this application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the following steps:

[0030] With the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature was obtained by adjusting the temperature in the temperature test chamber; wherein, the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0031] With the perforation test sample placed in a vacuum chamber and the air pressure in the vacuum chamber at the target air pressure, the second quality factor of the perforation test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber. The perforation test sample is obtained by perforating the original test sample. The target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforation test sample in the vacuum chamber is the standard quality factor.

[0032] Based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0033] Fifthly, this application also provides a computer program product, including a computer program that, when executed by a processor, performs the following steps:

[0034] With the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature was obtained by adjusting the temperature in the temperature test chamber; wherein, the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0035] With the perforation test sample placed in a vacuum chamber and the air pressure in the vacuum chamber at the target air pressure, the second quality factor of the perforation test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber. The perforation test sample is obtained by perforating the original test sample. The target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforation test sample in the vacuum chamber is the standard quality factor.

[0036] Based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0037] The aforementioned method and apparatus for determining the outgassing characteristics of internal materials in wafer-level vacuum-packaged devices determine the outgassing characteristics of the internal materials of the original test sample by combining the first quality factor of the original test sample (i.e., the wafer-level vacuum-packaged microelectromechanical system (MEMS) device) at various test temperatures and the second quality factor of the open-hole test sample at various test temperatures. Since the first quality factor is obtained under normal conditions, i.e., without eliminating the influence of residual stress at high temperatures, structural stiffness, the quality factor test circuit board, and internal material outgassing on the quality factor; and the second quality factor is obtained with the original test sample having an open hole, i.e., without eliminating residual stress at high temperatures, structural stiffness, and the quality factor test circuit board, but eliminating the influence of internal material outgassing on the quality factor, combining the first and second quality factors can eliminate or mitigate the influence of residual stress at high temperatures, changes in structural stiffness, and the quality factor test circuit board on the quality factor, ultimately making the determination of the outgassing characteristics of the internal materials of the wafer-level vacuum-packaged device more accurate. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a flowchart illustrating a method for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device provided in this application embodiment;

[0040] Figure 2 This is a schematic diagram of a process for obtaining the first quality factor of the original test sample at various test temperatures, provided in an embodiment of this application.

[0041] Figure 3 This is a schematic diagram of a process for obtaining the second quality factor of an opening test sample at various test temperatures, provided in an embodiment of this application.

[0042] Figure 4 This is a schematic diagram of a process for determining the venting characteristics of internal materials provided in an embodiment of this application;

[0043] Figure 5 This is a flowchart illustrating another method for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device provided in this application embodiment;

[0044] Figure 6 This is a structural block diagram of a device for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device provided in this application embodiment;

[0045] Figure 7 This is a structural block diagram of another device for determining the outgassing characteristics of the internal material of a wafer-level vacuum packaging device provided in this application embodiment;

[0046] Figure 8 This is an internal structural diagram of a computer device provided in an embodiment of this application. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0048] Wafer-level packaging is an advanced packaging technology that has seen rapid development in recent years due to its advantages such as small size, excellent electrical performance, good heat dissipation, and low cost. However, after wafer-level vacuum packaging of MEMS devices, the stability of the internal pressure of the packaging cavity will fluctuate due to the release of gas from the internal materials. And the pressure changes in the tiny cavity of MEMS wafer-level hermetically sealed packaging can lead to the degradation of MEMS device performance.

[0049] High-temperature stress can cause gas release from the internal materials of MEMS wafer-level vacuum packaging cavities, and can also cause residual stress and changes in the structural stiffness of the internal materials, thereby causing performance drift of MEMS wafer-level vacuum packaging devices and affecting the stability of device performance.

[0050] Currently, various technologies are being researched to address the testing needs of gas pressure and pressure changes within micro-cavities of MEMS, such as quality factor monitoring, IR transmission, Raman spectroscopy, and residual gas analysis. However, these methods directly consider the gas within the cavity and do not account for other changes that occur in vacuum-sealed MEMS devices at high temperatures, such as residual stress generated by the structure of the internal materials and changes in structural stiffness. Therefore, the test results of these methods for the gas outgassing characteristics of the internal materials after vacuum sealing are inaccurate.

[0051] Based on this, in order to more accurately test the gas release characteristics of the internal material after vacuum packaging, this application provides a method for determining the gas release characteristics of the internal material of a wafer-level vacuum-packaged device, which can be applied to computer equipment, such as a server or a terminal with powerful computing capabilities.

[0052] It should be noted that, before describing the embodiments of this application in detail, the embodiments of this application will be described in detail using a wafer-level vacuum-packaged capacitive Z-axis dual decoupled tuning fork gyroscope as an example.

[0053] The structure of a capacitive Z-axis dual-decoupled tuning fork gyroscope is typically fabricated using SOG (Spin-On Glass) technology. Its driving mode includes driving comb teeth and driving-detecting comb teeth for closed-loop drive control; the detection mode includes detection comb teeth and force feedback comb teeth for detection-based closed-loop control; and the mode matching comb teeth are used for real-time mode matching control. The natural frequency w of the structure's driving mode... d and the natural frequency w of the detection mode s It can be represented as:

[0054] (1)

[0055] (2)

[0056] Where, m dk d To drive the mass and stiffness of the mode, m s k s To detect the quality and stiffness of the modal.

[0057] As can be seen from formulas (1) and (2), the stiffness and mass of the structure determine its natural frequency. The stiffness is affected by the residual stress in the structure and changes accordingly. The residual stress is generated by the high temperature of the bonding process, such as in the bonding process of MEMS wafer-level vacuum packaging. After bonding under high temperature conditions, when the temperature of the device structure returns to room temperature, residual stress will be generated in the structure due to the mismatch of the thermal expansion coefficients of the heterogeneous materials at the bonding interface, which will affect the stiffness of the structure. The high temperature will also directly lead to the change in the stiffness of the structure. That is, the change in temperature and the change in residual stress will both lead to the change in the stiffness of the structure, thereby leading to the change in the natural frequency of the structure.

[0058] Damping ratio of driving mode Damping ratio of the detection mode It can be represented as:

[0059] (3)

[0060] (4)

[0061] Among them, c d and c s These are the damping force coefficients for the driving mode and the detection mode, respectively.

[0062] As can be seen from formulas (3) and (4), the structure's mass, natural frequency, and damping force coefficient determine the structure's damping ratio. Among these, changes in the gas pressure inside the vacuum-sealed cavity will cause changes in the damping force coefficient; the higher the gas pressure, the greater the damping force coefficient. Changes in both the structure's natural frequency and damping force coefficient will cause changes in the damping ratio. For example, the high-temperature bonding during the wafer-level vacuum sealing process may cause gas release from the material inside the cavity, leading to an increase in the gas pressure inside the structure's cavity, which in turn leads to an increase in the damping force coefficient.

[0063] Quality factor Q of the driving mode d and the quality factor Q of the detection mode s It can be represented as:

[0064] (5)

[0065] (6)

[0066] As can be seen from formulas (1) to (6), the damping ratio of a structure determines its quality factor, and the damping ratio is affected by the natural frequency and damping force coefficient of the structure. Therefore, changes in both the natural frequency and the damping force coefficient will cause changes in the quality factor. Among them, changes in temperature will cause changes in residual stress and structural stiffness, and residual stress will further cause changes in structural stiffness, ultimately leading to changes in the natural frequency of the structure; changes in the damping force coefficient mainly come from changes in the gas pressure inside the vacuum-sealed cavity.

[0067] Therefore, high temperatures can cause changes in residual stress, structural stiffness, and internal gas pressure within the vacuum packaging cavity, leading to variations in the quality factor. Simultaneously, high temperatures may also alter the parameters of the test circuit board, resulting in changes to the quality factor.

[0068] Furthermore, in order to determine the outgassing characteristics of the internal materials of the vacuum-sealed device, embodiments of this application eliminate or reduce the influence of factors such as residual stress, structural stiffness, and test circuit boards on the quality factor through drilling operations.

[0069] Figure 1 This is a flowchart illustrating a method for determining the outgassing characteristics of internal materials in a wafer-level vacuum packaging device, as provided in this application embodiment. The method is explained using an example of it being executed by a server. Figure 1 As shown, the method for determining the outgassing characteristics of the internal material of this wafer-level vacuum-packaged device includes the following steps S101 to S103. Wherein:

[0070] S101, with the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature is obtained by adjusting the temperature in the temperature test chamber.

[0071] The original test samples were microelectromechanical systems (MEMS) devices in wafer-level vacuum packaging. The quality factor is a characteristic parameter that characterizes the outgassing properties of the internal materials of wafer-level vacuum-packaged devices.

[0072] For example, a test circuit board containing the original test sample is fixed in a temperature test chamber, and the electrical leads of the test circuit board are connected and led out to the outside of the temperature test chamber to be connected to an external power supply and related testing instruments; then, by controlling the testing instruments, the first quality factor Q1 of the original test sample at each test temperature in the temperature test chamber can be obtained.

[0073] For example, there are n test temperatures, namely T1, T2, ..., Tn. n The relationship between the test temperatures is T1. <T1<…<T nIn this embodiment, the temperature of the temperature test chamber can be adjusted sequentially in ascending order. During the test, for each test temperature, the original test sample is tested using a testing instrument to determine the first quality factor Q1 of the original test sample at that test temperature. After all test temperatures are tested, n first quality factors Q1 are obtained.

[0074] S102, with the hole-opening test sample placed in a vacuum chamber and the air pressure in the vacuum chamber being the target air pressure, the second quality factor of the hole-opening test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber.

[0075] The open-hole test sample is obtained by drilling holes in the original test sample, for example, using FIB (focused-ion-beam) or laser etching methods. It should be noted that the drilling location on the original test sample should avoid stress concentration areas of the entire packaging structure and the device area inside the cavity, and the hole diameter should be minimized as much as possible.

[0076] A vacuum chamber is a device whose temperature and pressure are adjustable and whose interior is in a vacuum state. The target pressure is the pressure in the vacuum chamber when the temperature is at the standard temperature and the quality factor of the open-hole test sample in the vacuum chamber is at the standard quality factor. Here, the standard temperature refers to the temperature set to standardize the measurement conditions of the test; optionally, in the embodiments of this application, the standard temperature can be room temperature (i.e., 25°C).

[0077] The standard quality factor can be a pre-set quality factor or the quality factor of the original test sample at a standard temperature. For example, the original test sample is placed on a test circuit board, and the test circuit board is connected to a test instrument. At a standard temperature, the quality factor of the original test sample is tested by controlling the test instrument, and the quality factor of the original test sample at the standard temperature is obtained from the test instrument, which is the standard quality factor.

[0078] For example, the original test sample after the hole is opened, i.e., the hole-opening test sample, is still installed on the test circuit. Then, the test circuit board containing the hole-opening test sample can be fixed in the vacuum chamber equipment, and the electrical leads of the test circuit board are connected and led out to the outside of the vacuum chamber equipment, connecting to an external power supply and related testing instruments. The temperature in the vacuum chamber equipment is adjusted to the standard temperature, while the gas pressure in the vacuum chamber equipment is continuously adjusted until the gas pressure is adjusted to the standard quality factor of the hole-opening test sample. At this point, the gas pressure in the vacuum chamber equipment is the target gas pressure. Then, keeping the gas pressure in the vacuum chamber equipment constant, the second quality factor Q2 of the hole-opening test sample at each test temperature is obtained by controlling the testing instruments.

[0079] S103. Based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, determine the gas release characteristics of the internal material of the original test sample.

[0080] For example, after obtaining the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, the second quality factor can be removed from the first quality factor to eliminate or reduce the influence of residual stress, structural stiffness and test circuit board on the quality factor, so as to accurately calculate the change in quality factor caused by material outgassing, thereby accurately determining the outgassing characteristics of the internal material of the original test sample.

[0081] The aforementioned method for determining the outgassing characteristics of internal materials in wafer-level vacuum-packaged devices combines the first quality factor of the original test sample (i.e., the wafer-level vacuum-packaged microelectromechanical system (MEMS) device) at various test temperatures with the second quality factor of the open-hole test sample at various test temperatures to determine the outgassing characteristics of the internal materials of the original test sample. Since the first quality factor is obtained under normal conditions, i.e., without eliminating the influence of residual stress at high temperatures, structural stiffness, the quality factor test circuit board, and internal material outgassing on the quality factor; and the second quality factor is obtained with the original test sample having an open hole, i.e., without eliminating residual stress at high temperatures, structural stiffness, and the quality factor test circuit board, but eliminating the influence of internal material outgassing on the quality factor, combining the first and second quality factors can eliminate or mitigate the influence of residual stress at high temperatures, changes in structural stiffness, and the quality factor test circuit board on the quality factor, ultimately making the determination of the outgassing characteristics of internal materials in wafer-level vacuum-packaged devices more accurate.

[0082] Optionally, based on the above embodiments, this application provides an alternative method for determining the target gas pressure. For example, the temperature in the vacuum chamber can be adjusted to a standard temperature; when the temperature in the vacuum chamber is stable at the standard temperature, the gas pressure in the vacuum chamber is adjusted, and the quality factor of the opening test sample is detected; when the quality factor of the opening test sample is detected to be the standard quality factor, the gas pressure in the vacuum chamber is taken as the target gas pressure.

[0083] Specifically, this can involve issuing a temperature adjustment command, including a standard temperature, to the vacuum chamber equipment to adjust its temperature to the standard temperature. Once the temperature of the vacuum chamber equipment stabilizes at the standard temperature, the gas pressure of the vacuum chamber equipment is continuously adjusted. The testing instrument is controlled to test the quality factor of the open-hole test samples under each vacuum chamber equipment's gas pressure. When the quality factor of the open-hole test sample is detected to be the standard quality factor, the gas pressure of the vacuum chamber equipment at that time is determined as the target gas pressure. By introducing a standard quality factor and using it as a reference to adjust the gas pressure of the vacuum chamber equipment, the determined target gas pressure can be made more reasonable and accurate.

[0084] In one exemplary embodiment, such as Figure 2 As shown, by adjusting the temperature in the temperature test chamber, the first quality factor of the original test sample at each test temperature is obtained, including the following S201 to S203. Wherein:

[0085] S201, for each test temperature, adjust the temperature in the temperature test chamber to that test temperature.

[0086] For example, for each test temperature, a temperature adjustment command including that test temperature can be issued to the temperature test chamber so that the temperature test chamber adjusts its temperature to that test temperature.

[0087] S202, with the temperature of the temperature test chamber stable at the test temperature, the quality factor of the original test sample is tested at least twice to obtain at least two quality factors of the original test sample at the test temperature.

[0088] Taking test temperature T1 as an example, after the temperature of the test chamber stabilizes at the test temperature T1, the temperature of the test chamber is kept constant at T1 for a holding time of Δh (generally, 0h < Δh ≤ 24h). During the temperature holding period, the original test sample is tested multiple times using testing instruments to obtain the quality factor of the original test sample at test temperature T1. For example, if the original test sample is tested 3 times during the temperature holding period, the quality factor of the original test sample is tested according to the average time interval (time interval = holding time / n, where n is the number of tests), and finally, the three quality factors of the original test sample at test temperature T1 are obtained.

[0089] S203, based on at least two quality factors of the original test sample at this test temperature, determine the first quality factor of the original test sample at this test temperature.

[0090] Taking test temperature T1 as an example, the original test sample is tested three times at an average time interval at test temperature T1. The three quality factors obtained can be selected as the first quality factor Q1 of the original test sample at test temperature T1, or the maximum (or minimum) value of the three quality factors can be selected as the first quality factor Q1 of the original test sample at test temperature T1.

[0091] To ensure the accuracy of the test, the average of at least two quality factors of the original test sample at the test temperature can be used as the first quality factor of the original test sample at that test temperature. For example, the average of three quality factors can be taken as the first quality factor Q1 of the original test sample at test temperature T1.

[0092] In this embodiment, by conducting multiple tests on the original test sample, the accuracy of the first quality factor is improved, thereby making the determination of the gas release characteristics of the internal material of the vacuum-sealed device more accurate.

[0093] In one exemplary embodiment, such as Figure 3 As shown, by adjusting the temperature in the vacuum chamber, the second quality factor of the opening test sample at each test temperature is obtained, including the following S301 to S302. Wherein:

[0094] S301, for each test temperature, adjust the temperature in the vacuum chamber equipment to that test temperature.

[0095] For example, for each test temperature, a temperature adjustment command including that test temperature can be issued to the vacuum chamber device so that the vacuum chamber device adjusts its temperature to that test temperature.

[0096] S302, with the temperature of the vacuum chamber equipment stable at the test temperature, the quality factor of the opening test sample is tested at least twice to obtain at least two quality factors of the opening test sample at the test temperature.

[0097] Taking test temperature T1 as an example, after the temperature of the vacuum chamber equipment stabilizes at the test temperature T1, the temperature of the vacuum chamber equipment is kept constant at T1 for a holding time of Δh (generally, 0h < Δh ≤ 24h). During the temperature holding time, the open-hole test sample is tested multiple times using testing instruments to obtain the quality factor of the open-hole test sample at test temperature T1. For example, if the open-hole test sample is tested 3 times during the temperature holding time, the quality factor of the open-hole test sample is tested according to the average time interval (time interval = holding time / n, where n is the number of tests), and finally, the three quality factors of the open-hole test sample at test temperature T1 are obtained.

[0098] S303, based on at least two quality factors of the open-hole test sample at the test temperature, determine the second quality factor of the open-hole test sample at the test temperature.

[0099] Taking test temperature T1 as an example, the sample with the opening is tested three times at an average time interval at test temperature T1. The three quality factors obtained can be selected as the second quality factor Q2 of the sample with the opening at test temperature T1, or the maximum (or minimum) value of the three quality factors can be selected as the second quality factor Q2 of the sample with the opening at test temperature T1.

[0100] To ensure the accuracy of the test, the average of at least two quality factors of the open-hole test sample at the test temperature can be used as the second quality factor of the open-hole test sample at that test temperature. For example, the average of three quality factors can be taken as the second quality factor Q2 of the open-hole test sample at test temperature T1.

[0101] In this embodiment, by conducting multiple tests on the open-hole test sample, the accuracy of the second quality factor is improved, thereby making the determination of the gas release characteristics of the internal material of the vacuum-sealed device more accurate.

[0102] In one exemplary embodiment, such as Figure 4 As shown, based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-pore test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined as follows: S401 to S402. Wherein:

[0103] S401, for each test temperature, the difference between the first quality factor of the original test sample at that test temperature and the second quality factor of the open-hole test sample at that test temperature is taken as the new quality factor of the original test sample at that test temperature.

[0104] Taking test temperature T1 as an example, the difference between the first quality factor Q1 and the second quality factor Q2 at test temperature T1, i.e., |Q1-Q2|, is taken as the new quality factor of the original test sample at that test temperature.

[0105] S402, based on the new quality factors of the original test sample at each test temperature, determine the outgassing characteristics of the internal materials of the original test sample.

[0106] Optionally, a comprehensive analysis of the new quality factors of the original test sample at various test temperatures can be performed to determine the outgassing characteristics of the internal materials of the original test sample. For example, a relationship curve between temperature and quality factor can be constructed based on the new quality factors of the original test sample at various test temperatures; the outgassing characteristics of the internal materials of the original test sample can then be determined based on the relationship curve.

[0107] Specifically, based on the new quality factors of the original test sample at various test temperatures, multiple sets of temperature-to-new quality factor correspondences can be obtained, and then a relationship curve with temperature as the horizontal axis and new quality factor as the vertical axis can be obtained; the relationship curve is used to describe the gas release characteristics of the internal material of the test sample.

[0108] In this embodiment, by subtracting the second quality factor from the first quality factor, the influence of residual stress at high temperature, structural stiffness, and test circuit board on the quality factor change is eliminated, and the quality factor change caused by the gas release of the internal material of the original test sample is obtained, thereby inferring the gas release characteristics of the internal material of the wafer-level vacuum packaging device.

[0109] Based on the above embodiments, this embodiment provides an optional example of a method for determining the outgassing characteristics of internal materials in wafer-level vacuum packaging devices. For example... Figure 5 As shown, the specific implementation process is as follows:

[0110] S501, with the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature is obtained by adjusting the temperature in the temperature test chamber.

[0111] The original test sample was a microelectromechanical system (MEMS) device with wafer-level vacuum packaging.

[0112] Optionally, for each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; with the temperature of the temperature test chamber stable at that test temperature, the quality factor of the original test sample is tested at least twice to obtain at least two quality factors of the original test sample at that test temperature; based on the at least two quality factors of the original test sample at that test temperature, the first quality factor of the original test sample at that test temperature is determined.

[0113] S502, when the sample for the hole-opening test is placed in the vacuum chamber equipment, adjust the temperature in the vacuum chamber equipment to the standard temperature.

[0114] Among them, the hole-punch test sample is obtained by punching holes in the original test sample.

[0115] S503, with the temperature in the vacuum chamber equipment stable at the standard temperature, adjusts the gas pressure in the vacuum chamber equipment and detects the quality factor of the open-hole test sample.

[0116] S504, when the quality factor of the tested sample with an open hole is detected to be the standard quality factor, the gas pressure in the vacuum chamber is used as the target gas pressure.

[0117] The standard quality factor is the quality factor of the original test sample at the standard temperature.

[0118] S505, with the gas pressure in the vacuum chamber equipment at the target gas pressure, obtains the second quality factor of the opening test sample at each test temperature by adjusting the temperature in the vacuum chamber equipment.

[0119] Optionally, with the gas pressure in the vacuum chamber equipment being the target gas pressure, the temperature in the vacuum chamber equipment is adjusted to the test temperature for each test temperature; with the temperature of the vacuum chamber equipment stable at the test temperature, the quality factor of the opening test sample is tested at least twice to obtain at least two quality factors of the opening test sample at the test temperature; based on the at least two quality factors of the opening test sample at the test temperature, a second quality factor of the opening test sample at the test temperature is determined.

[0120] S506, the difference between the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature shall be used as the new quality factor of the original test sample at each test temperature.

[0121] S507, based on the new quality factors of the original test samples at various test temperatures, construct the relationship curve between temperature and quality factor.

[0122] S508, based on the relationship curve, determine the gas release characteristics of the internal material of the original test sample.

[0123] The specific processes of S501-S508 described above can be referred to the description of the above method embodiments. Their implementation principles and technical effects are similar, and will not be repeated here.

[0124] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0125] Based on the same inventive concept, this application also provides an apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices, used to implement the method for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices described above. The solution provided by this apparatus is similar to the solution described in the above method. Therefore, the specific limitations of one or more embodiments of the apparatus for determining the outgassing characteristics of internal materials of wafer-level vacuum packaging devices provided below can be found in the limitations of the characteristic determination method above, and will not be repeated here.

[0126] In one exemplary embodiment, such as Figure 6 As shown, a device 1 for determining the outgassing characteristics of internal materials of a wafer-level vacuum packaging device is provided, comprising: a first acquisition module 10, a second acquisition module 20, and a determination module 30, wherein:

[0127] The first acquisition module 10 is used to acquire the first quality factor of the original test sample at each test temperature by adjusting the temperature in the temperature test chamber when the original test sample is placed in the temperature test chamber; wherein the original test sample is a microelectromechanical system (MEMS) device with wafer-level vacuum packaging.

[0128] The second acquisition module 20 is used to acquire the second quality factor of the perforated test sample at each test temperature by adjusting the temperature in the vacuum chamber when the perforated test sample is placed in the vacuum chamber and the air pressure in the vacuum chamber is the target air pressure; wherein, the perforated test sample is obtained by perforating the original test sample; the target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforated test sample in the vacuum chamber is the standard quality factor.

[0129] The determination module 30 is used to determine the gas release characteristics of the internal material of the original test sample based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature.

[0130] In one embodiment, such as Figure 7 As shown, the determining module 30 includes:

[0131] The factor update unit 31 is used to, for each test temperature, take the difference between the first quality factor of the original test sample at that test temperature and the second quality factor of the opening test sample at that test temperature as the new quality factor of the original test sample at that test temperature.

[0132] The characteristic determination unit 32 is used to determine the outgassing characteristics of the internal materials of the original test sample based on the new quality factor of the original test sample at each test temperature.

[0133] In one embodiment, the characteristic determination unit 32 is specifically used for:

[0134] Based on the new quality factors of the original test sample at various test temperatures, construct the relationship curve between temperature and quality factor; based on the relationship curve, determine the outgassing characteristics of the internal materials of the original test sample.

[0135] In one embodiment, the first acquisition module 10 is specifically used for:

[0136] For each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; with the temperature of the temperature test chamber stable at that test temperature, the quality factor of the original test sample is tested at least twice to obtain at least two quality factors of the original test sample at that test temperature; based on the at least two quality factors of the original test sample at that test temperature, the first quality factor of the original test sample at that test temperature is determined.

[0137] In one embodiment, the second acquisition module 20 is specifically used for:

[0138] For each test temperature, the temperature in the vacuum chamber is adjusted to that test temperature; with the temperature of the vacuum chamber stable at that test temperature, the quality factor of the opening test sample is tested at least twice to obtain at least two quality factors of the opening test sample at that test temperature; based on the at least two quality factors of the opening test sample at that test temperature, the second quality factor of the opening test sample at that test temperature is determined.

[0139] In one embodiment, the device 1 for determining the outgassing characteristics of the internal material of a wafer-level vacuum packaging device further includes a pressure determination module, which is used for:

[0140] With the opening test sample placed in the vacuum chamber, the temperature in the vacuum chamber is adjusted to the standard temperature. Once the temperature in the vacuum chamber is stable at the standard temperature, the gas pressure in the vacuum chamber is adjusted, and the quality factor of the opening test sample is detected. When the quality factor of the opening test sample is detected to be the standard quality factor, the gas pressure in the vacuum chamber is taken as the target gas pressure.

[0141] In one embodiment, the standard quality factor is the quality factor of the original test sample at a standard temperature. Each module in the aforementioned device for determining the outgassing characteristics of the internal material of a wafer-level vacuum-sealed device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in or independent of the processor in a computer device in hardware form, or stored in the memory of a computer device in software form, so that the processor can call and execute the operations corresponding to each module.

[0142] In one exemplary embodiment, a computer device is provided, which may be a server, and its internal structure diagram may be as follows: Figure 8 As shown, the computer device includes a processor, memory, input / output (I / O) interfaces, and a communication interface. The processor, memory, and I / O interfaces are connected via a system bus, and the communication interface is also connected to the system bus via the I / O interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and a database. The internal memory provides the environment for the operation of the operating system and computer programs in the non-volatile storage media. The database stores experimental data. The I / O interfaces are used for exchanging information between the processor and external devices. The communication interface is used for communication with external terminals via a network connection. When executed by the processor, the computer program implements a method for determining the outgassing characteristics of the internal material of a wafer-level vacuum-packaged device.

[0143] Those skilled in the art will understand that Figure 8 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0144] In one exemplary embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0145] With the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature was obtained by adjusting the temperature in the temperature test chamber; wherein, the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0146] With the perforation test sample placed in a vacuum chamber and the air pressure in the vacuum chamber at the target air pressure, the second quality factor of the perforation test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber. The perforation test sample is obtained by perforating the original test sample. The target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforation test sample in the vacuum chamber is the standard quality factor.

[0147] Based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0148] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0149] For each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; with the temperature of the temperature test chamber stable at that test temperature, the quality factor of the original test sample is tested at least twice to obtain at least two quality factors of the original test sample at that test temperature; based on the at least two quality factors of the original test sample at that test temperature, the first quality factor of the original test sample at that test temperature is determined.

[0150] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0151] For each test temperature, the temperature in the vacuum chamber is adjusted to that test temperature; with the temperature of the vacuum chamber stable at that test temperature, the quality factor of the opening test sample is tested at least twice to obtain at least two quality factors of the opening test sample at that test temperature; based on the at least two quality factors of the opening test sample at that test temperature, the second quality factor of the opening test sample at that test temperature is determined.

[0152] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0153] For each test temperature, the difference between the first quality factor of the original test sample at that test temperature and the second quality factor of the open-hole test sample at that test temperature is taken as the new quality factor of the original test sample at that test temperature; based on the new quality factor of the original test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0154] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0155] Based on the new quality factors of the original test sample at various test temperatures, construct the relationship curve between temperature and quality factor; based on the relationship curve, determine the outgassing characteristics of the internal materials of the original test sample.

[0156] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0157] With the opening test sample placed in the vacuum chamber, the temperature in the vacuum chamber is adjusted to the standard temperature. Once the temperature in the vacuum chamber is stable at the standard temperature, the gas pressure in the vacuum chamber is adjusted, and the quality factor of the opening test sample is detected. When the quality factor of the opening test sample is detected to be the standard quality factor, the gas pressure in the vacuum chamber is taken as the target gas pressure.

[0158] In one embodiment, the standard quality factor is the quality factor of the original test sample at a standard temperature.

[0159] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0160] With the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature was obtained by adjusting the temperature in the temperature test chamber; wherein, the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0161] With the perforation test sample placed in a vacuum chamber and the air pressure in the vacuum chamber at the target air pressure, the second quality factor of the perforation test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber. The perforation test sample is obtained by perforating the original test sample. The target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforation test sample in the vacuum chamber is the standard quality factor.

[0162] Based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0163] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0164] For each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; with the temperature of the temperature test chamber stable at that test temperature, the quality factor of the original test sample is tested at least twice to obtain at least two quality factors of the original test sample at that test temperature; based on the at least two quality factors of the original test sample at that test temperature, the first quality factor of the original test sample at that test temperature is determined.

[0165] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0166] For each test temperature, the temperature in the vacuum chamber is adjusted to that test temperature; with the temperature of the vacuum chamber stable at that test temperature, the quality factor of the opening test sample is tested at least twice to obtain at least two quality factors of the opening test sample at that test temperature; based on the at least two quality factors of the opening test sample at that test temperature, the second quality factor of the opening test sample at that test temperature is determined.

[0167] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0168] For each test temperature, the difference between the first quality factor of the original test sample at that test temperature and the second quality factor of the open-hole test sample at that test temperature is taken as the new quality factor of the original test sample at that test temperature; based on the new quality factor of the original test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0169] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0170] Based on the new quality factors of the original test sample at various test temperatures, construct the relationship curve between temperature and quality factor; based on the relationship curve, determine the outgassing characteristics of the internal materials of the original test sample.

[0171] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0172] With the opening test sample placed in the vacuum chamber, the temperature in the vacuum chamber is adjusted to the standard temperature. Once the temperature in the vacuum chamber is stable at the standard temperature, the gas pressure in the vacuum chamber is adjusted, and the quality factor of the opening test sample is detected. When the quality factor of the opening test sample is detected to be the standard quality factor, the gas pressure in the vacuum chamber is taken as the target gas pressure.

[0173] In one embodiment, the standard quality factor is the quality factor of the original test sample at a standard temperature.

[0174] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, performs the following steps:

[0175] With the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature was obtained by adjusting the temperature in the temperature test chamber; wherein, the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device.

[0176] With the perforation test sample placed in a vacuum chamber and the air pressure in the vacuum chamber at the target air pressure, the second quality factor of the perforation test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber. The perforation test sample is obtained by perforating the original test sample. The target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforation test sample in the vacuum chamber is the standard quality factor.

[0177] Based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0178] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0179] For each test temperature, the temperature in the temperature test chamber is adjusted to that test temperature; with the temperature of the temperature test chamber stable at that test temperature, the quality factor of the original test sample is tested at least twice to obtain at least two quality factors of the original test sample at that test temperature; based on the at least two quality factors of the original test sample at that test temperature, the first quality factor of the original test sample at that test temperature is determined.

[0180] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0181] For each test temperature, the temperature in the vacuum chamber is adjusted to that test temperature; with the temperature of the vacuum chamber stable at that test temperature, the quality factor of the opening test sample is tested at least twice to obtain at least two quality factors of the opening test sample at that test temperature; based on the at least two quality factors of the opening test sample at that test temperature, the second quality factor of the opening test sample at that test temperature is determined.

[0182] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0183] For each test temperature, the difference between the first quality factor of the original test sample at that test temperature and the second quality factor of the open-hole test sample at that test temperature is taken as the new quality factor of the original test sample at that test temperature; based on the new quality factor of the original test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

[0184] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0185] Based on the new quality factors of the original test sample at various test temperatures, construct the relationship curve between temperature and quality factor; based on the relationship curve, determine the outgassing characteristics of the internal materials of the original test sample.

[0186] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0187] With the opening test sample placed in the vacuum chamber, the temperature in the vacuum chamber is adjusted to the standard temperature. Once the temperature in the vacuum chamber is stable at the standard temperature, the gas pressure in the vacuum chamber is adjusted, and the quality factor of the opening test sample is detected. When the quality factor of the opening test sample is detected to be the standard quality factor, the gas pressure in the vacuum chamber is taken as the target gas pressure.

[0188] In one embodiment, the standard quality factor is the quality factor of the original test sample at a standard temperature.

[0189] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments described above. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0190] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0191] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for determining the outgassing characteristics of internal materials in a wafer-level vacuum-packaged device, characterized in that, The method includes: With the original test sample placed in a temperature test chamber, the first quality factor of the original test sample at each test temperature is obtained by adjusting the temperature in the temperature test chamber; wherein, the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device. With the perforated test sample placed in a vacuum chamber and the air pressure in the vacuum chamber at the target air pressure, the second quality factor of the perforated test sample at each test temperature is obtained by adjusting the temperature in the vacuum chamber. The perforated test sample is obtained by perforating the original test sample. The target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforated test sample in the vacuum chamber is the standard quality factor. The standard quality factor is the quality factor of the original test sample at the standard temperature. Based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature, the outgassing characteristics of the internal material of the original test sample are determined.

2. The method according to claim 1, characterized in that, The step of obtaining the first quality factor of the original test sample at each test temperature by adjusting the temperature in the temperature test chamber includes: For each test temperature, adjust the temperature in the temperature test chamber to that test temperature; With the temperature of the temperature test chamber stable at the test temperature, the quality factor of the original test sample is tested at least twice to obtain at least two quality factors of the original test sample at the test temperature. The first quality factor of the original test sample at the test temperature is determined based on at least two quality factors of the original test sample at the test temperature.

3. The method according to claim 1, characterized in that, The step of obtaining the second quality factor of the opening test sample at each test temperature by adjusting the temperature in the vacuum chamber device includes: For each test temperature, the temperature in the vacuum chamber is adjusted to that test temperature; With the temperature of the vacuum chamber equipment stable at the test temperature, the quality factor of the opening test sample is tested at least twice to obtain at least two quality factors of the opening test sample at the test temperature. The second quality factor of the open-hole test sample at the test temperature is determined based on at least two quality factors of the open-hole test sample at the test temperature.

4. The method according to claim 1, characterized in that, The step of determining the outgassing characteristics of the internal material of the original test sample based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-pore test sample at each test temperature includes: For each test temperature, the difference between the first quality factor of the original test sample at that test temperature and the second quality factor of the open-hole test sample at that test temperature is taken as the new quality factor of the original test sample at that test temperature. Based on the new quality factors of the original test sample at various test temperatures, the outgassing characteristics of the internal materials of the original test sample are determined.

5. The method according to claim 4, characterized in that, The step of determining the outgassing characteristics of the internal materials of the original test sample based on the new quality factor of the original test sample at each test temperature includes: Based on the new quality factors of the original test samples at various test temperatures, construct the relationship curve between temperature and quality factor. Based on the relationship curve, the gas release characteristics of the internal material of the original test sample are determined.

6. The method according to claim 1, characterized in that, The method further includes: With the sample for the hole-opening test placed in the vacuum chamber, the temperature in the vacuum chamber is adjusted to the standard temperature; With the temperature in the vacuum chamber equipment stabilized at the standard temperature, the air pressure in the vacuum chamber equipment was adjusted, and the quality factor of the opening test sample was detected. When the quality factor of the open-hole test sample is detected to be the standard quality factor, the air pressure in the vacuum chamber device is taken as the target air pressure.

7. The method according to claim 1, characterized in that, The standard quality factor is the quality factor of the original test sample at the standard temperature.

8. A device for determining the outgassing characteristics of internal materials of a wafer-level vacuum-packaged device, characterized in that, The device includes: The first acquisition module is used to acquire the first quality factor of the original test sample at each test temperature by adjusting the temperature in the temperature test chamber when the original test sample is placed in the temperature test chamber; wherein the original test sample is a wafer-level vacuum-packaged microelectromechanical system (MEMS) device. The second acquisition module is used to acquire the second quality factor of the perforated test sample at various test temperatures by adjusting the temperature in the vacuum chamber when the perforated test sample is placed in a vacuum chamber and the air pressure in the vacuum chamber is the target air pressure; wherein the perforated test sample is obtained by perforating the original test sample; the target air pressure is the air pressure in the vacuum chamber when the temperature in the vacuum chamber is the standard temperature and the quality factor of the perforated test sample in the vacuum chamber is the standard quality factor; the standard quality factor is the quality factor of the original test sample at the standard temperature; The determination module is used to determine the outgassing characteristics of the internal material of the original test sample based on the first quality factor of the original test sample at each test temperature and the second quality factor of the open-hole test sample at each test temperature.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 7.

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