Display module, control method thereof, and display device

Abstract

The application discloses a display module, a control method thereof and a display device, and belongs to the technical field of display. Since the control component is connected to the array substrate in the display module, and the control component can detect the size of the leakage current through the light detection transistor, and adjust the size of the off voltage applied to the gate of the driving transistor based on the size of the leakage current. In this way, even if the driving transistor in the array substrate has the undesirable phenomenon of transistor characteristic drift, the off voltage applied to the driving transistor can be adjusted through the light detection transistor, and the driving transistor can be turned off. Therefore, after integrating the display module in the liquid crystal projection device, the probability of residual image phenomenon in the projection picture projected by the projection device can be reduced, and the display effect of the projection picture projected by the projection device is better.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a display module and its control method and display device. Background Technology

[0002] An LCD projector is a device that can project images or videos onto a screen or wall for display. It is widely used in homes, offices, schools, and entertainment venues.

[0003] Generally, a liquid crystal projection device can include a display module, a light source component, and an imaging component. The light source component provides an illumination beam to the display module, enabling the display module to modulate the illumination beam into a projection beam and direct it onto the imaging component. The imaging component, also known as a projection lens, projects the projection beam onto a screen or wall.

[0004] However, the illumination beam provided by the light source component is usually a strong light beam. After the illumination beam shines on the display module, the driving transistor inside the display module is prone to characteristic drift, which makes it easy for ghosting to appear in the projected image of the LCD projector, resulting in poor display effect of the projected image. Summary of the Invention

[0005] This application provides a display module and its control method, as well as a display device. It can solve the problem of poor display quality of projected images from liquid crystal projection devices. The technical solution is as follows:

[0006] On the one hand, a display module is provided, including:

[0007] An array substrate, and a control component bonded to the array substrate;

[0008] The array substrate includes: a substrate, a plurality of driving transistors located on one side of the substrate, a plurality of pixel electrodes electrically connected to the plurality of driving transistors in a one-to-one correspondence, and a photodetector transistor disposed on the same layer as the driving transistors.

[0009] The photodetector transistor and the plurality of driving transistors are all electrically connected to the control component;

[0010] The control component is configured to detect the magnitude of the leakage current through the photodetector transistor and adjust the magnitude of the turn-off voltage applied to the gate of the driving transistor based on the magnitude of the leakage current.

[0011] Optionally, the photodetector transistor includes: a first electrode, a second electrode, and a gate;

[0012] The first electrode and gate of the photodetector transistor are both connected to the test current supply terminal, and the second electrode of the photodetector transistor is electrically connected to the control component.

[0013] Specifically, after the test current supply terminal provides a preset turn-off voltage to the gate of the photodetector transistor and provides a detection current to the first electrode of the photodetector transistor, the control component receives the leakage current through the second electrode of the photodetector transistor and detects the magnitude of the leakage current.

[0014] Optionally, the array substrate further includes: an auxiliary pixel electrode electrically connected to the second electrode of the photodetector transistor, and a first signal trace electrically connected to the auxiliary pixel electrode;

[0015] The end of the first signal trace that is away from the auxiliary pixel electrode is electrically connected to the control component.

[0016] Optionally, the display module has a display area and a non-display area located around the display area;

[0017] The plurality of driving transistors and the plurality of pixel electrodes are all located within the display area, the photodetector transistor is located within the non-display area or within the display area, and the auxiliary pixel electrode is located within the non-display area or within the display area.

[0018] Optionally, when both the photodetector transistor and the auxiliary pixel electrode are located within the non-display area, the array substrate further includes: a first test pin, a second test pin, and a third test pin located within the non-display area;

[0019] The first test pin is electrically connected to the gate of the photodetector transistor; the second test pin is electrically connected to the first electrode of the photodetector transistor; the auxiliary pixel electrode is electrically connected to the third test pin and the control component, respectively.

[0020] Both the first test pin and the second test pin are used to connect to the external test current supply terminal.

[0021] Optionally, when both the photodetector transistor and the auxiliary pixel electrode are located within the display area, the photodetector transistor and the plurality of driving transistor arrays are arranged in multiple rows and columns, and the auxiliary pixel electrode and the plurality of pixel electrodes are also arranged in multiple rows and columns.

[0022] Optionally, both the photodetector transistor and the auxiliary pixel electrode are located in the display area near the edge of the non-display area.

[0023] Optionally, when the photodetector transistor is located in the display area and the auxiliary pixel electrode is located in the non-display area, the array substrate further includes: a plurality of virtual transistors, wherein at least some of the virtual transistors and some of the driving transistors are arranged in at least one row;

[0024] Wherein, for a row of transistors in the array substrate that simultaneously contains the virtual transistor and the driving transistor, at least one of the virtual transistors in the row of transistors is the photodetector transistor.

[0025] Optionally, for a row of transistors in the array substrate that simultaneously contains the virtual transistor and the driving transistor, the virtual transistor and the driving transistor in the row of transistors are arranged alternately.

[0026] Optionally, the array substrate further includes: multiple gate lines and multiple data lines electrically connected to the control component;

[0027] For a row of transistors in the array substrate that includes the photodetector transistor, the gate of the photodetector transistor is electrically connected to the gate of each of the driving transistors in the same row of transistors through the same gate line.

[0028] For a column of transistors containing the photodetector transistor in the array substrate, the first electrode of the photodetector transistor is electrically connected to the first electrode of each of the driving transistors in the same column via the same data line.

[0029] Optionally, the test current supply terminal is integrated into the control component. The test current supply terminal provides the preset turn-off voltage to the gate of the photodetector transistor through a corresponding gate line, and provides the detection current to the first electrode of the photodetector transistor through a corresponding data line.

[0030] Optionally, the auxiliary pixel electrode and the first connecting trace are both disposed in the same layer as the pixel electrode and are made of the same material.

[0031] Optionally, the display module further includes: a color filter substrate disposed opposite to the array substrate, and a liquid crystal layer located between the array substrate and the color filter substrate.

[0032] On the other hand, a display device is provided, the display device comprising: a light source component and any of the above-described display modules, the light source component being used to provide an illumination beam for the display module.

[0033] On the other hand, a control method for a display module is provided, including:

[0034] The magnitude of the leakage current is detected by the photodetector transistor;

[0035] Based on the magnitude of the leakage current, the control component adjusts the magnitude of the turn-off voltage applied to the gate of the driving transistor.

[0036] The beneficial effects of the technical solutions provided in this application include at least the following:

[0037] Because a control component is bonded to the array substrate in the display module, and this control component can detect the magnitude of leakage current using a photodetector transistor, and adjust the turn-off voltage applied to the gate of the driving transistor based on the magnitude of the leakage current, even if the driving transistor in the array substrate exhibits characteristic drift, the turn-off voltage applied to the driving transistor can be adjusted via the photodetector transistor, thereby enabling the driving transistor to be turned off. Thus, integrating this display module into a liquid crystal projection device reduces the probability of image retention in the projected image, resulting in a better display effect. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This is a top view of a display module provided in an embodiment of this application;

[0040] Figure 2 yes Figure 1 The diagram shows the film structure of the display module at point A-A'.

[0041] Figure 3 This is a structural block diagram of a display module provided in an embodiment of this application;

[0042] Figure 4 This is a top view of a photodetector transistor provided in an embodiment of this application;

[0043] Figure 5 yes Figure 4 A schematic diagram of the film structure of the photodetector transistor at B-B' is shown.

[0044] Figure 6 This is a top view of an array substrate in a display module provided in an embodiment of this application;

[0045] Figure 7This is a top view of an array substrate in another display module provided in this application embodiment;

[0046] Figure 8 This is a schematic diagram of the arrangement of driving transistors and pixel electrodes in a display area provided in an embodiment of this application. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0048] Please refer to Figure 1 , Figure 1 This is a top view of a display module provided in an embodiment of this application. The display module 000 may include: an array substrate 100, and a control component 200 bonded and connected to the array substrate 100.

[0049] To see the internal structure of display module 000 more clearly, please refer to... Figure 2 , Figure 2 yes Figure 1 The diagram shows the film layer structure of the display module at point A-A'. The array substrate 100 in the display module 000 may include: a substrate 101, a plurality of driving transistors 102 located on one side of the substrate 101, and a plurality of pixel electrodes 103 electrically connected to the plurality of driving transistors 102 in a one-to-one correspondence.

[0050] Here, each driving transistor 102 in the array substrate 101 can be electrically connected to the control component 200. In this way, the control component 200 can apply a pixel voltage to the corresponding pixel electrode 103 through the driving transistor 102.

[0051] In this application, as Figure 1 and Figure 2As shown, the display module 000 may further include: a color filter substrate 300 disposed opposite to the array substrate 100, and a liquid crystal layer 400 located between the array substrate 100 and the color filter substrate 300. In one possible implementation, a common electrode layer may be integrated within the color filter substrate 300; in another possible implementation, a common electrode layer may be integrated within the array substrate 100, and the common electrode layer may be located on the side of the pixel electrode 103 facing away from the substrate 101, and the two may be insulated from each other by a passivation layer 109. Here, the common electrode layer is also electrically connected to the control component 200. In this way, after the control component 200 applies a pixel voltage to the pixel electrode 103 and applies a common voltage to the common electrode layer, a voltage difference can be generated between the pixel electrode 103 and the common electrode layer. The liquid crystal molecules in the liquid crystal layer 400 corresponding to the pixel electrode 103 can be deflected under the action of this voltage difference, so that these deflected liquid crystal molecules can adjust the corresponding light in the illumination beam directed towards the display module, thereby enabling the display module to modulate the illumination beam into an image beam.

[0052] Please refer to Figure 3 , Figure 3 This is a structural block diagram of a display module provided in an embodiment of this application. The array substrate 100 in the liquid crystal display panel 000 may further include a photodetector transistor 104 disposed on the same layer as the driving transistor 102. It should be noted that the photodetector transistor 104 and the driving transistor 102 being disposed on the same layer means that the corresponding film structure in the photodetector transistor 104 and the corresponding film structure in the driving transistor 102 are disposed on the same layer and made of the same material. For example, the gate of the photodetector transistor 104 and the gate of the driving transistor 102 are disposed on the same layer and made of the same material, that is, they are formed simultaneously through the same patterning process; the source and drain of the photodetector transistor 104 and the source and drain of the driving transistor 102 are disposed on the same layer and made of the same material, that is, they are formed simultaneously through the same patterning process; the active layer of the photodetector transistor 104 and the active layer of the driving transistor 102 are disposed on the same layer and made of the same material, that is, they are formed simultaneously through the same patterning process.

[0053] Here, the photodetector transistor 104 in the array substrate 100 can also be electrically connected to the control component 200 in the display module 000.

[0054] In this application, the control component 200 in the display module 000 can be configured to: detect the magnitude of the leakage current through the photodetector transistor 104, and adjust the magnitude of the turn-off voltage applied to the gate of the drive transistor 102 based on the magnitude of the leakage current.

[0055] In this embodiment, when the active layer of the driving transistor 102 in the array substrate 100 is exposed to strong light for a long time, photogenerated carriers are generated inside the active layer. Even after applying a normal turn-off voltage to the gate of the driving transistor 102, a large leakage current still exists within the active layer, preventing the driving transistor 102 from being properly turned off. This phenomenon of the driving transistor 102 failing to turn off properly is commonly referred to as transistor characteristic drift. Therefore, the control component 200 in this application can detect the magnitude of the leakage current using a photodetector transistor 104 and adjust the magnitude of the turn-off voltage applied to the gate of the driving transistor 102 based on this leakage current. Thus, even if the driving transistor 102 in the array substrate 100 exhibits transistor characteristic drift, the turn-off voltage applied to the driving transistor 102 can be adjusted using the photodetector transistor 104, thereby enabling the driving transistor 102 to be turned off. In this way, by integrating this display module 000 into the LCD projector, the probability of ghosting in the projected image is reduced, resulting in a better display effect.

[0056] In summary, the display module provided in this application includes an array substrate and a control component bonded to the array substrate. Because the control component is bonded to the array substrate in the display module, and the control component can detect the magnitude of leakage current through a photodetector transistor and adjust the magnitude of the turn-off voltage applied to the gate of the driving transistor based on the magnitude of the leakage current, even if the driving transistor in the array substrate exhibits characteristic drift, the turn-off voltage applied to the driving transistor can be adjusted through the photodetector transistor, thereby enabling the driving transistor to be turned off. Thus, integrating this display module into a projection device can reduce the probability of image retention in the projected image, thereby improving the display effect of the projected image.

[0057] In the embodiments of this application, please refer to Figure 4 and Figure 5 , Figure 4 This is a top view of a photodetector transistor provided in an embodiment of this application. Figure 5 yes Figure 4 The diagram shows the film structure of the photodetector transistor at point B-B'. The photodetector transistor 104 in the array substrate 100 may include a first electrode 1041, a second electrode 1042, and a gate 1043. It should be noted that the first electrode 1041 in the photodetector transistor 104 refers to one of the source and drain electrodes, and the second electrode 1042 in the photodetector transistor 104 refers to the other of the source and drain electrodes.

[0058] In this application, the first electrode 1041 and the gate 1043 of the photodetector transistor 104 can both be connected to the test current supply terminal, and the second electrode 1042 of the photodetector transistor 104 can be electrically connected to the control component 200.

[0059] Specifically, after providing a preset turn-off voltage to the gate 1043 of the photodetector transistor 104 at the test current supply terminal and providing a detection current to the first terminal 1041 of the photodetector transistor 104, the control component 200 can receive leakage current through the second terminal 1042 of the photodetector transistor 104 and detect the magnitude of the leakage current. Here, the preset turn-off voltage refers to the turn-off voltage applied to the gate of the transistor before the transistor's characteristics drift.

[0060] It should be noted that the photodetector transistor 104 in the array substrate 100 may further include an active layer 1044. The two ends of the active layer 1044 can be electrically connected to the first electrode 1041 and the second electrode 1042, respectively. Here, after the test current supply terminal provides a detection current to the first electrode 1041 of the photodetector transistor 104, the first electrode 1041 can transmit the detection current to the second electrode 1042 through the active layer 1041, and the current received through the second electrode 1042 can be referred to as leakage current.

[0061] The active layer 1044 of the photodetector transistor 104 can be insulated from the gate 1043. For example, the active layer 1044 and the gate 1043 of the photodetector transistor 104 can be insulated from each other by a gate insulating layer 106. Furthermore, the orthographic projection of the gate 1043 onto the substrate 101 can overlap with the orthographic projection of the active layer 1044 onto the substrate 101. Thus, the voltage applied to the gate 1043 can control the conduction and cutoff of the active layer 1044. For example, after applying a preset cutoff voltage to the gate 1043, the active layer 1044 is theoretically in a cutoff state. That is, the first electrode 1041 cannot transmit detection current to the second electrode 1042 through the active layer 1044. When the active layer 1044 is exposed to strong light for a prolonged period, photogenerated carriers will be generated inside the active layer 1044. After applying a preset turn-off voltage to the gate 1043, the leakage current inside the active layer 1044 will increase, causing the active layer 1044 to fail to be turned off. That is, the first electrode 1041 can still transmit detection current to the second electrode 1042 through the active layer 1041.

[0062] Here, the active layer 1044 in the photodetector transistor 104 and the active layer in the driving transistor 102 need to be in the same illumination environment. This ensures that the degree of light exposure to the active layer 1044 in the photodetector transistor 104 is the same as that to the active layer in the driving transistor 102. Therefore, the magnitude of the leakage current detected by the photodetector transistor 104 can be used to reflect the magnitude of the leakage current inside the active layer of the driving transistor 102. Thus, after the control component 200 determines that the leakage current inside the active layer of the driving transistor 102 is large, the control component 200 can adjust the magnitude of the turn-off voltage applied to the gate of the driving transistor 102 to reduce the magnitude of the leakage current inside the active layer of the driving transistor 102, allowing the active layer of the driving transistor 102 to be normally turned off.

[0063] For example, the control component 200 can store a correspondence table that maps various leakage currents to multiple compensation values. After determining that the leakage current inside the active layer of the driving transistor 102 is large, the control component 200 can determine the corresponding compensation value based on the magnitude of the leakage current and the correspondence table. Then, the control component 200 can add the corresponding compensation value to a preset turn-off voltage to obtain a new turn-off voltage. Subsequently, the control component 200 can apply this new turn-off voltage to the gate of the driving transistor 102, thus allowing the active layer of the driving transistor 102 to turn off normally.

[0064] In the embodiments of this application, such as Figure 4 and Figure 5 As shown, the array substrate 100 in the display module 000 may further include: an auxiliary pixel electrode 105 electrically connected to the second electrode 1042 of the photodetector transistor 104, and a first signal trace L1 electrically connected to the auxiliary pixel electrode 105. The end of the first signal trace L1 facing away from the auxiliary pixel electrode 105 may be electrically connected to the control component 200. Thus, the second electrode 1042 of the photodetector transistor 104 can be electrically connected to the control component 200 through the auxiliary pixel electrode 105 and the first signal trace L1.

[0065] In this application, after a preset turn-off voltage is provided to the gate 1043 of the photodetector transistor 104 at the test current supply terminal and a detection current is provided to the first electrode 1041 of the photodetector transistor 104, the current received through the active layer 1044 and the second electrode 1042 of the photodetector transistor 104 can be called the leakage current of the photodetector transistor 104, and the leakage current can be transmitted to the control component 200 in sequence through the auxiliary pixel electrode 105 and the first signal line L1.

[0066] In this embodiment, since the photodetector transistor 104 and the driving transistor 102 in the array substrate 100 are disposed on the same layer, the auxiliary pixel electrode 105 connected to the photodetector transistor 104 can also be disposed on the same layer and made of the same material as the pixel electrode 103 connected to the driving transistor 102. That is, the auxiliary pixel electrode 105 and the pixel electrode 103 are formed using the same patterning process. It should be noted that the patterning process here may include: photoresist coating, exposure, development, etching, and photoresist stripping.

[0067] Optionally, the auxiliary pixel electrode 105 can also be disposed on the same layer as the first signal trace L1 and made of the same material. In this case, the auxiliary pixel electrode 105, the first signal trace L1, and the pixel electrode 103 are formed using the same patterning process. Thus, the auxiliary pixel electrode 105, the first signal trace L1, and the pixel electrode 103 can be formed simultaneously in the same process, which can effectively simplify the manufacturing difficulty of the liquid crystal display panel and reduce the manufacturing cost of the display panel.

[0068] It should be noted that the conductive layer containing the pixel electrode 103 and the auxiliary pixel electrode 105, as well as the second electrode in the driving transistor 102 and the second electrode 1042 in the photodetector transistor 104, are all located on the side of the gate insulating layer 106 facing away from the substrate 101. Therefore, the second electrode in the driving transistor 102 can be directly electrically connected to the pixel electrode 103 via an overlap, and the second electrode 1042 in the photodetector transistor 104 can also be directly electrically connected to the auxiliary pixel electrode 105 via an overlap.

[0069] In this embodiment, the display module 000 may have a display area and a non-display area located around the display area. Here, after integrating the display module 000 into a liquid crystal projection device, the non-display area in the display module 000 can be blocked by a mechanical light-shielding structure in the liquid crystal projection device. Multiple driving transistors 102 and multiple pixel electrodes 103 can all be located within the display area. The light detection transistor 104 can be located in the non-display area or within the display area, and the auxiliary pixel electrode 105 can also be located in the non-display area or within the display area. Therefore, this embodiment will illustrate the following optional implementation methods as examples:

[0070] In one optional implementation, where both the photodetector transistor 104 and the auxiliary pixel electrode 105 can be located within the non-display area, the photodetector transistor 104 can be a test transistor used to test the array substrate 100. For example, after the array substrate 100 is fabricated, electrical testing of the test transistors in the array substrate 100 is required to determine whether the driving transistors 102 within the fabricated array substrate 100 meet design specifications.

[0071] In this case, such as Figure 4 As shown, the array substrate 100 in the display module 000 may further include: a first test pin S1, a second test pin S2 and a third test pin S3 located in the non-display area.

[0072] The first test pin S1 can be electrically connected to the gate 1043 of the photodetector transistor 104, the second test pin S2 can be electrically connected to the first electrode 1041 of the photodetector transistor 104, and the auxiliary pixel electrode 105 can be electrically connected to the third test pin S3 and the control component 200 respectively.

[0073] Here, since the second electrode 1042 of the photodetector transistor 104 is electrically connected to the auxiliary pixel electrode 105, the third test pin S3 can be electrically connected to the second electrode 1042 of the photodetector transistor 104 through the auxiliary pixel electrode 105.

[0074] For example, such as Figure 4 As shown, the array substrate 100 may further include: a second signal line L2, a third signal line L3, and a fourth signal line L4. The two ends of the second signal line L2 can be electrically connected to the first test pin S1 and the gate 1043 of the photodetector transistor 104, respectively; the two ends of the third signal line L3 can be electrically connected to the second test pin S2 and the first electrode 1041 of the photodetector transistor 104, respectively; and the two ends of the fourth signal line L4 can be electrically connected to the auxiliary pixel electrode 105 and the third test pin S3, respectively. It should be noted that one side of the auxiliary pixel electrode 105 can be electrically connected to the second electrode 1042 of the photodetector transistor 104, and the other side of the auxiliary pixel electrode 105 can be electrically connected to the first signal line L1 and the fourth signal line L4, respectively. Therefore, the second electrode 1042 of the photodetector transistor 104 can be electrically connected to the control component 200 through the auxiliary pixel electrode 105 and the first signal line L1. The second electrode 1042 of the photodetector transistor 104 can also be electrically connected to the third test pin S3 through the auxiliary pixel electrode 105 and the fourth signal line L4.

[0075] In this embodiment, after the array substrate 100 is fabricated, it is necessary to perform electrical tests on the test transistors (i.e., photodetector transistors 104) in the array substrate 100. For example, three probes from a testing device can be connected to the first test pin S1, the second test pin S2, and the third test pin S3, respectively. The testing device can apply corresponding test signals to the test transistors through the first test pin S1 and the second test pin S2, and receive feedback signals from the test transistors through the third test pin S3. This feedback signal can then be used to determine whether the test transistors meet the design specifications, thereby determining whether the driving transistors 102 in the array substrate 100 meet the design specifications.

[0076] It should be noted that, since the control component 200 has not yet been bonded to the array substrate 100 during the process of fabricating the array substrate 100 and performing electrical tests on the test transistors, the feedback signal for testing the test transistors can be transmitted to the test equipment through the third test pin S3.

[0077] In this application, after the driving transistor 102 in the array substrate 100 conforms to the design specifications, the array substrate 100 can be coupled with the color filter substrate 300, and the control component 200 can be bound to the array substrate 100, thereby obtaining the display module 000. Since the display module 000 needs to undergo extensive lamp-on testing before leaving the factory, during the lamp-on testing process, the active layer of the driving transistor 102 may experience transistor characteristic drift under prolonged exposure to strong light. Therefore, after the lamp-on testing of the display module 000 is completed, the test transistor in the array substrate 100 needs to be used as a photodetector transistor 104 to detect the leakage current of the driving transistor 102 in the array substrate 100.

[0078] In this case, both the first test pin S1 and the second test pin S2 can be used as an external test current supply terminal. That is, the test current supply terminal belongs to a device outside the display module 000, and the test current supply terminal can be connected to the first test pin S1 and the second test pin S2 respectively through two probes. This allows the test current supply terminal to provide a preset turn-off voltage to the gate 1043 of the photodetector transistor 104 through one probe and the first test pin S1, and to provide detection current to the first electrode 1041 of the photodetector transistor 104 through the other probe and the second test pin S2.

[0079] Furthermore, in this configuration, the second electrode 1042 of the photodetector transistor 104 can be electrically connected to the control component 200 bonded to the array substrate 100 via the auxiliary pixel electrode 105 and the first signal trace L1, while no external probe needs to be connected to the third test pin S3 of the second electrode 1041 of the photodetector transistor 104. Therefore, the control component 200 can receive the leakage current transmitted through the second electrode 1042 of the photodetector transistor 104, detect the magnitude of the leakage current, and adjust the magnitude of the turn-off voltage applied to the gate of the driving transistor 102 based on the magnitude of the leakage current.

[0080] It should be noted that, before the display module 000 leaves the factory, the non-display area of ​​the display module 000 is not blocked by the mechanical light-shielding structure. Therefore, during the lamp-on test of the display module 000, the active layer 1044 of the photodetector transistor 104 and the active layer of the driving transistor 102 in the array substrate 100 can be in the same illumination environment. The magnitude of the leakage current detected by the photodetector transistor 104 can be used to reflect the magnitude of the leakage current inside the active layer of the driving transistor 102. Therefore, by means of the above method, the magnitude of the turn-off voltage applied to the gate of the driving transistor 102 can be adjusted before the display module 000 leaves the factory, so that the display effect of the image presented by the display module 000 after leaving the factory is better.

[0081] Another alternative implementation, where both the photodetector transistor 104 and the auxiliary pixel electrode 105 are located within the display area 00a, please refer to... Figure 6 , Figure 6 This is a top view of an array substrate in a display module provided in this application embodiment. The photodetector transistor 104 can be arranged in multiple rows and columns with multiple driving transistors 102, and the auxiliary pixel electrode 105 can also be arranged in multiple rows and columns with multiple pixel electrodes 103. Thus, whether before or after the display module 000 leaves the factory, the active layer 1044 of the photodetector transistor 104 and the active layer of the driving transistor 102 can be in the same illumination environment. The magnitude of the leakage current detected by the photodetector transistor 104 can be used to reflect the magnitude of the leakage current inside the active layer of the driving transistor 102. Therefore, the control component 200 can adjust the turn-off voltage of the driving transistor 102 according to the magnitude of the leakage current received from the photodetector transistor 104 to ensure that the driving transistor 102 can be turned off.

[0082] In the embodiments of this application, such as Figure 6As shown, both the photodetector transistor 104 and the auxiliary pixel electrode 105 can be located in the display area 00a near the edge of the non-display area 00b. This ensures that the auxiliary pixel electrode 105 has a minimal impact on the arrangement of the multiple pixel electrodes 103 distributed within the display area 00a, thus minimizing the impact of the auxiliary pixel electrode 105 within the display area 00a on the image presented by the display module 000.

[0083] Another alternative implementation, where the photodetector transistor 104 is located within display area 00a and the auxiliary pixel electrode is located within non-display area 00b, please refer to [reference needed]. Figure 7 , Figure 7 This is a top view of an array substrate in another display module provided in this application embodiment. The array substrate 100 may further include a plurality of virtual transistors 108. At least some of the virtual transistors 108 may be arranged in at least one row with some of the driving transistors 102. For a row of transistors in the array substrate 100 that simultaneously includes virtual transistors 108 and driving transistors 102, at least one virtual transistor 108 in this row may be a photodetector transistor 104.

[0084] In this configuration, since a row of transistors containing both virtual transistors 108 and driving transistors 102 can be located within the display area 00a of the display module 000, when at least one virtual transistor 108 in this row is a photodetector transistor 104, the active layer 1044 of the photodetector transistor 104 and the active layer of the driving transistor 102 can be in the same illumination environment, whether the display module 000 is manufactured before or after its manufacture. Thus, the magnitude of the leakage current detected by the photodetector transistor 104 can be used to reflect the magnitude of the leakage current within the active layer of the driving transistor 102. Therefore, the control component 200 can adjust the turn-off voltage of the driving transistor 102 based on the received leakage current magnitude of the photodetector transistor 104 to ensure that the driving transistor 102 can be turned off.

[0085] In the embodiments of this application, such as Figure 8 As shown, Figure 8 This is a schematic diagram illustrating the arrangement of driving transistors and pixel electrodes in a display area according to an embodiment of this application. For driving transistors 102 arranged in the same row in the array substrate 100, two adjacent driving transistors 102 in this row can be electrically connected to two pixel electrodes 103 respectively, and these two pixel electrodes 103 belong to two adjacent rows of pixel electrodes 103 respectively. That is, the pixel electrodes 103 connected to a row of driving transistors 102 are arranged in a top-bottom configuration.

[0086] In this case, for a row of transistors in the array substrate 100 that simultaneously contains both virtual transistors 108 and driving transistors 102, this row of transistors can be either the first row of transistors in the display area 00a or the last row of transistors. Within this row of transistors, the virtual transistors 108 and driving transistors 102 can also be arranged alternately. This ensures that when a virtual transistor 108 is used as a light-detecting transistor 104, that light-detecting transistor 104 can be arranged within the display area 00a.

[0087] In this application, the auxiliary pixel electrode 105, which is electrically connected to the second electrode 1042 of the photodetector transistor 104, can be distributed within the non-display area 00b. Therefore, the auxiliary pixel electrode 105 will not affect the arrangement of the multiple pixel electrodes 105 distributed within the display area 00a, and the auxiliary pixel electrode 105 will not affect the image displayed by the display module 000.

[0088] Optionally, a portion of the multiple virtual transistors 108 can be arranged in at least one row with a portion of the multiple driving transistors 102, while another portion of the multiple virtual transistors 108 can be arranged in at least two rows, and the at least two rows of virtual transistors 108 can be distributed on opposite sides of the display area 00a. Here, since the virtual transistors 108 can be arranged on the same layer as the driving transistors 102, by setting at least two rows of virtual transistors 108 on both sides of the display area 00a, it is possible to ensure a high degree of uniformity in the pattern structures of the multiple driving transistors 102 formed by the patterning process.

[0089] In the alternative implementation described above, after integrating the display module 000 into the liquid crystal projection device, during the operation of the liquid crystal projection device, the illumination beam emitted by the light source component will always illuminate the display module 000. The driving transistors 102 in the display module 000 are highly susceptible to characteristic drift under strong light. Therefore, the driving component 200 can adjust the magnitude of the turn-off voltage applied to the gate of the driving transistors 102 at fixed intervals via the photodetector transistor 104 to ensure that these driving transistors 102 can be normally turned off.

[0090] For example, in the second and third optional implementations described above, the test current supply terminal can be integrated into the control component 200. Thus, during the process of adjusting the turn-off voltage applied to the gate of the driving transistor 102 via the control component 200, the test current supply terminal within the control component 200 can apply a preset turn-off voltage to the gate 1043 of the photodetector transistor 104, and can apply a detection current to the first electrode 1041 of the photodetector transistor 104. In this way, leakage current is transmitted to the control component 200 through the active layer 1044, the second electrode 1021, the auxiliary pixel electrode 105, and the first signal trace L1 of the photodetector transistor 104, enabling the control component 200 to adjust the magnitude of the turn-off voltage applied to the gate of the driving transistor 102 based on the magnitude of the leakage current. Therefore, by means of the above method, the magnitude of the turn-off voltage applied to the gate of the driving transistor 102 can be adjusted after the display module 000 leaves the factory, so that the display effect of the image presented by the display module 000 during normal use is better.

[0091] In the embodiments of this application, such as Figure 6 , Figure 7 and Figure 8 As shown, the array substrate 100 in the display module 000 may further include multiple gate lines G and multiple data lines D electrically connected to the control component 200. Here, the multiple gate lines G can be arranged in parallel, and the multiple data lines D can also be arranged in parallel, with the extension direction of the gate lines G perpendicular to the extension direction of the data lines D. Here, any two adjacent gate lines G and any two adjacent data points D can form a sub-pixel region, and the pixel electrode 103 can be distributed within this sub-pixel region.

[0092] Specifically, for a row of transistors in the array substrate 100 that includes photodetector transistors 104, the gate 1043 of the photodetector transistor 104 and the gates of each driving transistor 102 in the same row can be electrically connected through the same gate line. For a column of transistors in the array substrate 100 that includes photodetector transistors 104, the first terminal 1041 of the photodetector transistor 104 and the first terminal of each driving transistor 102 in the same column are electrically connected through the same data line D.

[0093] In this application, both the gate line G and the data line D in the array substrate 100 can be electrically connected to the control component 200. In this case, the test current supply terminal integrated in the control component 200 can provide a preset turn-off voltage to the gate 1043 of the photodetector transistor 104 through the corresponding gate line G, and provide a detection current to the first electrode 1041 of the photodetector transistor 104 through the corresponding data line D.

[0094] In summary, the display module provided in this application includes an array substrate and a control component bonded to the array substrate. Since the control component is bonded to the array substrate in the display module, and the control component can detect the magnitude of leakage current through a photodetector transistor and adjust the magnitude of the turn-off voltage applied to the gate of the driving transistor based on the magnitude of the leakage current, even if the driving transistor in the array substrate exhibits characteristic drift, the turn-off voltage applied to the driving transistor can be adjusted through the photodetector transistor, thereby enabling the driving transistor to be turned off. Thus, integrating this display module into a liquid crystal projection device can reduce the probability of image retention in the projected image, thereby improving the display effect of the projected image.

[0095] This application also provides a display device, which can be any product or component with display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or LCD projector. When the display device is a projection device, it can include a light source component, an imaging component, and any of the aforementioned display modules. Here, the light source component can provide an illumination beam to the display module, enabling the display module to modulate the illumination beam into a projection beam and project it onto the imaging component. The imaging component, also known as a projection lens, can project the projection beam onto a screen or wall.

[0096] This application also provides a control method for a display module. This control method is used to control the display module in the above embodiments. The control method may include the following steps:

[0097] Step S1: Detect the magnitude of leakage current using a photodetector transistor.

[0098] Step S2: Based on the magnitude of the leakage current, adjust the magnitude of the turn-off voltage applied to the gate of the driving transistor through the control component.

[0099] In the embodiments of this application, the structural principles of the display module can be referred to the embodiments described above for the structure of the display module, and will not be repeated here.

[0100] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0101] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.

[0102] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A display module, characterized in that, include: An array substrate, and a control component bonded to the array substrate; The array substrate includes: a substrate, a plurality of driving transistors located on one side of the substrate, a plurality of pixel electrodes electrically connected to the plurality of driving transistors in a one-to-one correspondence, and a photodetector transistor disposed on the same layer as the driving transistors. The photodetector transistor and the plurality of driving transistors are all electrically connected to the control component; The control component is configured to: detect the magnitude of the leakage current through the photodetector transistor, and adjust the magnitude of the turn-off voltage applied to the gate of the driving transistor based on the magnitude of the leakage current; The array substrate further includes: an auxiliary pixel electrode electrically connected to the second electrode of the photodetector transistor, and a first signal trace electrically connected to the auxiliary pixel electrode; one end of the first signal trace away from the auxiliary pixel electrode is electrically connected to the control component; The second electrode of the photodetector transistor is used to receive the leakage current, which is transmitted to the control component sequentially through the auxiliary pixel electrode and the first signal trace.

2. The display module according to claim 1, characterized in that, The photodetector transistor includes: a first electrode, a second electrode, and a gate; The first electrode and gate of the photodetector transistor are both connected to the test current supply terminal, and the second electrode of the photodetector transistor is electrically connected to the control component. Specifically, after the test current supply terminal provides a preset turn-off voltage to the gate of the photodetector transistor and provides a detection current to the first electrode of the photodetector transistor, the control component receives the leakage current through the second electrode of the photodetector transistor and detects the magnitude of the leakage current.

3. The display module according to claim 2, characterized in that, The display module has a display area and a non-display area located around the display area; The plurality of driving transistors and the plurality of pixel electrodes are all located within the display area, the photodetector transistor is located within the non-display area or within the display area, and the auxiliary pixel electrode is located within the non-display area or within the display area.

4. The display module according to claim 3, characterized in that, When both the photodetector transistor and the auxiliary pixel electrode are located within the non-display area, the array substrate further includes: a first test pin, a second test pin, and a third test pin located within the non-display area; The first test pin is electrically connected to the gate of the photodetector transistor; the second test pin is electrically connected to the first electrode of the photodetector transistor; the auxiliary pixel electrode is electrically connected to the third test pin and the control component, respectively. Both the first test pin and the second test pin are used to connect to the external test current supply terminal.

5. The display module according to claim 3, characterized in that, When both the photodetector transistor and the auxiliary pixel electrode are located within the display area, the photodetector transistor and the plurality of driving transistor arrays are arranged in multiple rows and columns, and the auxiliary pixel electrode and the plurality of pixel electrodes are also arranged in multiple rows and columns.

6. The display module according to claim 5, characterized in that, Both the photodetector transistor and the auxiliary pixel electrode are located in the display area near the edge of the non-display area.

7. The display module according to claim 3, characterized in that, When the photodetector transistor is located in the display area and the auxiliary pixel electrode is located in the non-display area, the array substrate further includes: a plurality of virtual transistors, wherein at least a portion of the virtual transistors and a portion of the driving transistors are arranged in at least one row; Wherein, for a row of transistors in the array substrate that simultaneously contains the virtual transistor and the driving transistor, at least one of the virtual transistors in the row of transistors is the photodetector transistor.

8. The display module according to claim 7, characterized in that, For a row of transistors in the array substrate that simultaneously contains the virtual transistor and the driving transistor, the virtual transistor and the driving transistor in the row of transistors are arranged alternately.

9. The display module according to any one of claims 5 to 8, characterized in that, The array substrate further includes: multiple gate lines and multiple data lines electrically connected to the control component; For a row of transistors in the array substrate that includes the photodetector transistor, the gate of the photodetector transistor is electrically connected to the gate of each of the driving transistors in the same row of transistors through the same gate line. For a column of transistors containing the photodetector transistor in the array substrate, the first electrode of the photodetector transistor is electrically connected to the first electrode of each of the driving transistors in the same column via the same data line.

10. The display module according to claim 9, characterized in that, The test current supply terminal is integrated within the control component. The test current supply terminal provides the preset turn-off voltage to the gate of the photodetector transistor through a corresponding gate line, and provides the detection current to the first electrode of the photodetector transistor through a corresponding data line.

11. The display module according to claim 1, characterized in that, The auxiliary pixel electrode and the first signal trace are both disposed on the same layer as the pixel electrode and are made of the same material.

12. The display module according to any one of claims 1 to 8, characterized in that, The display module further includes: a color filter substrate disposed opposite to the array substrate, and a liquid crystal layer located between the array substrate and the color filter substrate.

13. A display device, characterized in that, include: The light source component and the display module according to any one of claims 1 to 12, wherein the light source component is used to provide an illumination beam for the display module.

14. A control method for a display module, characterized in that, Applied to the display module according to any one of claims 1 to 12, the method includes: The magnitude of the leakage current is detected by the photodetector transistor; Based on the magnitude of the leakage current, the control component adjusts the magnitude of the turn-off voltage applied to the gate of the driving transistor.

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