An ultra-thin sharpening blade for processing semiconductor materials and its manufacturing process.

Abstract

This invention relates to an ultra-thin sharpening blade for processing semiconductor materials and its manufacturing process, comprising: providing a raw material; homogenizing and slicing the raw material to obtain a sheet; grinding the sheet to obtain a substrate of uniform thickness; and sharpening and polishing one end of the substrate to obtain a cutting edge; wherein, during the process of sharpening and polishing one end of the substrate to obtain the cutting edge, the substrate is vacuum-adsorbed onto a fixture, and the cutting edge and cutting surface are gradually formed by symmetrical polishing and cutting on both sides of one end of the substrate through the end face of a fine-pile polishing wheel, so that the cutting edge is an isosceles triangle and the cutting surface is smooth, thereby making the cutting edge sharp for cutting semiconductor materials, and the cutting surface makes smooth contact with the surface of the semiconductor product to prevent surface scratching and cracking.

Description

Technical Field

[0001] This invention relates to the technical field of cutting tool processing, and in particular to an ultra-thin sharpening blade for processing semiconductor materials and its manufacturing process. Background Technology

[0002] Existing cutting tools are prone to causing scratches and cracks when cutting semiconductor materials. In particular, when the cutting edge of the tungsten carbide blade used for cutting semiconductor materials is not sharp or the cutting surface is not smooth, scratches and cracks are easily caused on the product surface. This phenomenon is not only related to the sharpness of the tungsten carbide blade edge and the luster of the cutting surface, but also closely related to the cutting edge angle, transition section, and blade thickness. Generally, cutting tools consist of a cutting edge and a base. When cutting semiconductor materials, the blade edge is prone to scratches and cracks due to contact between the base and the product surface. Therefore, it is necessary to change the structure of the cutting tool itself. In addition, the thickness of the cutting tool itself for cutting semiconductor materials needs to be thin. Since the thickness of the tungsten carbide blade body is between a few micrometers and a dozen micrometers, it is very difficult to process the cutting edge of the thin blade while taking into account the structural strength of the thin blade. This can easily lead to problems such as breakage or chipping of the cutting edge during grinding. Therefore, it is necessary to improve the processing technology of ultra-thin blades.

[0003] In the prior art, patent number CN 113510764 A discloses a method and blade for improving the tilting during cutting of chip components. This method involves using a blade to cut chip component sheets, ensuring that the resultant force F of the two cutting surfaces of the blade in the horizontal direction is less than a predetermined value. Here, F = F1(cosα - u·sinα) - F2(cosβ - u·sinβ), where α and β are the angles between the two cutting surfaces of the blade and the blade's centerline, F1 and F2 are the expulsion forces exerted by the component on the two cutting surfaces of the blade, and u represents the coefficient of dynamic friction between the blade and the product during cutting. This method can quickly and effectively improve the blade's bending condition during cutting, eliminating the problem of poor product appearance caused by blade skew and deformation. However, this blade is prone to causing surface scratches and cracks when cutting semiconductor materials. Summary of the Invention

[0004] The first objective of this invention is to provide a process for manufacturing ultra-thin sharpening blades, which aims to solve the problem that ultra-thin blade manufacturing processes cannot achieve smooth and sharpened blades.

[0005] To solve the above-mentioned technical problems, a process for preparing an ultra-thin sharpened blade is provided, including providing raw materials; homogenizing and slicing the raw materials to obtain a sheet-like body; grinding the sheet-like body to obtain a substrate; and sharpening and polishing one end of the substrate to obtain a cutting edge; wherein, during the process of sharpening and polishing one end of the substrate to obtain the cutting edge, the substrate is vacuum-adsorbed onto a fixture, and the two sides of one end of the substrate are symmetrically polished by the end face of a fine-pile polishing wheel to obtain a cutting edge and a cutting surface, so that the cutting edge is an isosceles triangle and the cutting surface is smooth.

[0006] Furthermore, the step of symmetrically polishing the two sides of one end of the substrate with the end face of the fine-pile polishing wheel to obtain the cutting edge and the cutting edge surface includes polishing the two sides of the substrate near the end with the fine-pile polishing wheel to obtain a first transition portion, and the first transition portion is concave arc; polishing the blade with the fine-pile polishing wheel to form the cutting edge and the cutting edge surface.

[0007] Furthermore, the step of symmetrically polishing both sides of one end of the substrate with the end face of the fine-pile polishing wheel to obtain the cutting edge and the cutting edge also includes polishing the connection between the first transition portion and the cutting edge with the fine-pile polishing wheel to obtain a second transition portion, so that the second transition portion forms a convex arc, and the convex arc is smoothly connected to the concave arc.

[0008] The second objective of this invention is to provide an ultra-thin sharpening blade for processing semiconductor materials, aiming to solve the problem of cracking when cutting semiconductor materials with an ultra-thin sharpening blade.

[0009] An ultra-thin sharpening blade for processing semiconductor materials includes a substrate, a first transition portion, a second transition portion, and a cutting edge. One end of the first transition portion is connected to the substrate. One end of the second transition portion is connected to the other end of the first transition portion away from the substrate. The cutting edge includes a blade body and a cutting edge connected to one end of the blade body. The other end of the blade body is connected to the other end of the second transition portion. The first transition portion is connected between the substrate and the second transition portion in a bilaterally symmetrical concave arc. The second transition portion is connected between the first transition portion and the blade body in a bilaterally symmetrical convex arc. A first transition line is formed at the connection between the blade body and the second transition portion. A second transition line is formed at the connection between the first transition portion and the substrate. The semiconductor material is cut only through the cutting edge, and the semiconductor material deviates from the substrate between the first transition line and the second transition line.

[0010] Further, let the angle between the cutting edge and the blade body be α, the distance from the cutting edge to the first transition line be L1, the distance from the cutting edge to the second transition line be L2, the length of the first transition line be S1, and the length of the second transition line be S2;

[0011] Satisfying the relation:

[0012] 13°≤a≤15°;

[0013] 0.395mm≤S2≤0.405mm;

[0014] 12.06 L2 / L1 18.69;

[0015] 6.58 S2 / S1≤6.75;

[0016] 3.16 L1 / S1 4.84.

[0017] Furthermore, the radius of the convex arc of the second transition portion is R2, where R2 = 0.03 mm; and the radius of the concave arc of the first transition portion is R1, where R1 = 5.5 mm.

[0018] Furthermore, the angle between the first transition portion and the substrate is b, where b = 4°.

[0019] Furthermore, the shortest distance of the cross section of the first transition portion is l, l = 0.05 mm.

[0020] Furthermore, the length of the substrate is S, and the distance from the end of the substrate to the cutting edge is L, wherein 84.9mm≤S≤85.1mm, 22.3mm≤L≤22.5mm.

[0021] Furthermore, the blade is made of tungsten steel, and the connection between the cutting edge and the blade body forms an isosceles triangle. Let F be the reverse cutting force exerted on the cutting edge by the semiconductor material, and let the direction of F be along the angle bisector of the isosceles triangle. Let M1 be the torque between the blade body and one side of the second transition portion, and let M2 be the torque between the base body and one side of the first transition portion. Let M be the bending strength of the tungsten steel. The following relationships are satisfied: M1 = F * S1 / 4, M2 = F * S2 / 4, M1 < M2 < M.

[0022] Further, the isosceles triangle includes a leg. Let F1 be the cutting force exerted by the semiconductor material on the cutting edge, and let F1 be directed along the leg. At this point, the cutting body on the side away from the leg forms a first intersection point with the second transition portion. The first intersection point generates a torque M3, and the distance from the first intersection point perpendicular to the leg is d1. The substrate on the side away from the leg forms a second intersection point with the first transition portion. The second intersection point generates a torque M4, and the distance from the second intersection point perpendicular to the leg is d2. The first transition portion has a midpoint, which generates a torque M5, and the distance from the midpoint perpendicular to the leg is d3. This satisfies the following relationship:

[0023] d1 = S1 * cos(a / 2);

[0024] d2=L2*sin(a / 2)+[S2*cos(a / 2)] / 2;

[0025] d3 = [L2*sin(a / 2)] / 2;

[0026] M3 = F1 * d1;

[0027] M4 = F1 * d2;

[0028] M5 = F1 * d3;

[0029] M3 < M5 < M4 < M.

[0030] Implementing the embodiments of the present invention will have the following beneficial effects:

[0031] 1. The ultra-thin sharpened blade for processing semiconductor materials in this embodiment has a cutting edge at one end of the blade body and the other end of the blade body is connected to the other end of the second transition part. The first transition part is a concave arc with two sides symmetrical on both sides connected between the substrate and the second transition part. The second transition part is a convex arc with two sides symmetrical on both sides connected between the first transition part and the blade body. A first transition line is formed at the connection between the blade body and the second transition part, and a second transition line is formed at the connection between the first transition part and the substrate. This makes the cutting edge sharp for cutting semiconductor materials, and a fluid shape is formed between the blade body, the first transition part and the second transition part, which makes the cutting of semiconductor materials smooth and prevents the surface of the semiconductor product after cutting from scratching and cracking. This overcomes the problem that ordinary blades in the prior art are prone to scratching and cracking when cutting semiconductor materials.

[0032] 2. In this embodiment, the ultra-thin sharpening insert for processing semiconductor materials has the following characteristics: the angle between the cutting edge and the insert body is α, the distance from the cutting edge to the first transition line is L1, the distance from the cutting edge to the second transition line is L2, the length of the first transition line is S1, and the length of the second transition line is S2. These characteristics satisfy the following relationships: 13°≤a≤15°, 0.395mm≤S2≤0.405mm, 12.06<L2 / L1<18.69, 6.58<S2 / S1≤6.75, 3.16<L1 / S1<4.84. Therefore, the range of each required parameter can be calculated based on these relationships, and a suitable ultra-thin sharpening insert for processing semiconductor materials can be designed.

[0033] 3. In this embodiment, the ultra-thin sharpened blade for processing semiconductor materials is made of tungsten steel. The connection between the cutting edge and the blade body forms an isosceles triangle. When the cutting edge is subjected to a reverse cutting force of semiconductor material, F, and the direction of F is along the angle bisector of the isosceles triangle, the torque between the blade body and one side of the second transition part is M1, and the torque between the base body and one side of the first transition part is M2. Let the bending strength of tungsten steel be M. The following relationships are satisfied: M1 = F * S1 / 4, M2 = F * S2 / 4, M1 < M2 < M. Thus, the feasibility of cutting semiconductor materials under ideal conditions can be verified by calculating the parameters of the blade.

[0034] 4. In this embodiment, the ultra-thin sharpening blade for processing semiconductor materials has an isosceles triangular blade body with a waist edge. The side of the blade body away from the waist edge forms a first intersection point with the second transition section. The first intersection point generates a torque of M3, and the distance between the first intersection point and the waist edge is d1. The side of the substrate away from the waist edge forms a second intersection point with the first transition section. The second intersection point generates a torque of M4, and the distance between the second intersection point and the waist edge is d2. The first transition section has a midpoint, which generates a torque of M5, and the distance between the midpoint and the waist edge is... When the cutting edge is subjected to a cutting bias force of semiconductor material F1, and the direction of F1 is along the waist, the following relationships are satisfied: d1=S1*cos(a / 2), d2=L2*sin(a / 2)+[S2*cos(a / 2)] / 2, d3=[L2*sin(a / 2)] / 2, M3=F1*d1, M4=F1*d2, M5=F1*d3, M3<M5<M4<M, thus verifying the feasibility of the cutting tool's bending strength under extreme cutting bias force;

[0035] 5. The ultra-thin sharpening blade manufacturing process in this embodiment includes providing raw materials, slicing, grinding, and polishing. During the polishing process, the blade is vacuum-adsorbed onto the fixture and polished by the end face of the fine-pile polishing wheel to make the cutting edge an isosceles triangle. The cutting edge is formed by repeatedly polishing the end of the blade body, thereby realizing the manufacturing of ultra-thin sharpening blades for processing semiconductor materials. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a front view of the ultra-thin sharpening blade for processing semiconductor materials according to an embodiment of the present invention;

[0038] Figure 2 This is a left view of the ultra-thin sharpening blade for processing semiconductor materials according to an embodiment of the present invention;

[0039] Figure 3 for Figure 2 A magnified view of a section at point A in the middle;

[0040] Figure 4 for Figure 3 A magnified view of a section at point B in the middle;

[0041] Figure 5 This is a front view of the isosceles triangle formed by the blade body and the cutting edge as described in an embodiment of the present invention;

[0042] Figure 6 This is a torque analysis diagram of the cutting edge subjected to a positive cutting force according to an embodiment of the present invention;

[0043] Figure 7 This is a torque analysis diagram of the cutting edge subjected to a biased cutting force as described in an embodiment of the present invention;

[0044] Figure 8 This is a flowchart of the thin-sharpened blade manufacturing process described in an embodiment of the present invention.

[0045] Wherein: 100, ultra-thin sharpening blade for processing semiconductor materials; 110, substrate; 120, first transition section; 121, concave arc; 122, second transition line; 123, second intersection point; 124, midpoint; 130, second transition section; 131, convex arc; 132, first transition line; 133, first intersection point; 140, cutting edge; 141, blade body; 142, cutting edge; 143, isosceles triangle; 1431, waist edge. Detailed Implementation

[0046] To facilitate understanding of the present invention, a more complete description will be given below with reference to the accompanying drawings. Preferred embodiments of the invention are shown in the drawings. However, the invention can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a thorough and complete understanding of the disclosure of the invention.

[0047] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly attached to the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0048] Example 1

[0049] Please refer to Figures 1-7 Embodiment 1 of the present invention provides an ultra-thin sharpening blade 100 for processing semiconductor materials, including a substrate 110, a first transition portion 120, a second transition portion 130, and a cutting edge 140; one end of the first transition portion 120 is connected to the substrate 110; one end of the second transition portion 130 is connected to the other end of the first transition portion 120 away from the substrate 110; the cutting edge 140 includes a blade body 141 and a cutting edge 142 connected to one end of the blade body 141, the other end of the blade body 141 is connected to the other end of the second transition portion 130, and the first transition portion 120... The first transition portion 120 is connected to the second transition portion 130 by a concave arc 121 with bilateral symmetry. The second transition portion 130 is connected to the first transition portion 120 and the cutting edge 141 by a convex arc 131 with bilateral symmetry. A first transition line 132 is formed at the connection between the cutting edge 141 and the second transition portion 130, and a second transition line 122 is formed at the connection between the first transition portion 120 and the base 110, so that the semiconductor material is cut only by the cutting edge 142, and the semiconductor material is deviated from the base between the first transition line 132 and the second transition line 122. In specific applications, since one end of the blade 141 is provided with a cutting edge 142, and the other end of the blade 141 is connected to the other end of the second transition portion 130, the first transition portion 120 is connected between the base 110 and the second transition portion 130 by a concave arc 121 with bilateral symmetry, and the second transition portion 130 is connected between the first transition portion 120 and the blade 141 by a convex arc 131 with bilateral symmetry, a first transition line 132 is formed at the connection between the blade 141 and the second transition portion 130, and a second transition line 122 is formed at the connection between the first transition portion 120 and the base 110, so that the cutting edge 142 can cut semiconductor materials sharply, and a fluid shape is formed between the blade 141, the first transition portion 120 and the second transition portion 130, thereby making the cutting of semiconductor materials smooth and preventing the surface of the semiconductor product after cutting from scratching and cracking.

[0050] In one possible implementation, let the angle between the cutting edge 142 and the blade body be α, the distance from the cutting edge 142 to the first transition line 132 be L1, the distance from the cutting edge 142 to the second transition line 122 be L2, the length of the first transition line 132 be S1, and the length of the second transition line 122 be S2; satisfying the following relationships: 13°≤a≤15°, 0.395mm≤S2≤0.405mm, 12.06 L2 / L1 = 18.69, 6.58 S2 / S1 ≤ 6.75, 3.16 L1 / S1 = 4.84. After extensive experimental research and verification, given that the angle between the cutting edge 142 and the tool body is α, the distance from the cutting edge 142 to the first transition line 132 is L1, the distance from the cutting edge 142 to the second transition line 122 is L2, the length of the first transition line 132 is S1, and the length of the second transition line 122 is S2, the following relationships need to be satisfied: 13°≤a≤15°, 0.395mm≤S2≤0.405mm, 12.06L2 / L1 ≤ 18.69, 6.58S2 / S1≤6.75, 3.16L1 / S1 ≤ 4.84. Based on these relationships, the ranges of the required parameters can be calculated, leading to the design of a suitable ultra-thin sharpening insert 100 for processing semiconductor materials. After repeated verification and correction of the insert parameters, the experimental results are as follows:

[0051] knives a L1 L2 S1 S2 Sharpness Scratch line Blade 1 20° 0.27mm 4.05mm 0.075mm 0.5mm Low Deeper Blade 2 18° 0.25mm 3.68mm 0.068mm 0.45mm Low deep Blade 3 16° 0.23mm 3.44mm 0.064mm 0.42mm medium generally blade n ... ... ... ... ... ... ... Blade n+1 15° 0.29mm 3.5mm 0.06mm 0.4005mm high shallower blade n+2 14° 0.24mm 3.5mm 0.06mm 0.4mm Super high none

[0052] The experimental results in the table above show that when the blade parameters are a = 14°, L1 = 0.24 mm, L2 = 3.5 mm, S1 = 0.06 mm, and S2 = 0.4 mm, the ultra-thin sharpened blade 100 for processing semiconductor materials has extremely high sharpness in cutting semiconductor materials, and there are no scratches from particles after cutting.

[0053] In one possible implementation, the radius of the convex arc 131 of the second transition portion 130 is R2, R2 = 0.03 mm; the radius of the concave arc 121 of the first transition portion 120 is R1, R1 = 5.5 mm; the angle between the first transition portion 120 and the base 110 is b, b = 4°; the shortest distance across the cross-section of the first transition portion 120 is l, l = 0.05 mm; the length of the base 110 is S, and the distance from the end of the base 110 to the cutting edge 142 is L, wherein 84.9 mm ≤ S ≤ 85.1 mm. 22.3mm≤L≤22.5mm; The blade material is tungsten steel. The connection between the cutting edge 142 and the cutting body 141 forms an isosceles triangle 143. Let F be the reverse cutting force of the semiconductor material on the cutting edge 142, and let F be the direction along the angle bisector of the isosceles triangle 143. Let M1 be the torque on one side of the cutting body 141 and the second transition part 130, and M2 be the torque on one side of the base 110 and the first transition part 120. Let M be the bending strength of the tungsten steel. The following relationships are satisfied: M1=F*S1 / 4, M2=F*S2 / 4, M1 M2M. In practical applications, since the blade is made of tungsten steel, the connection between the cutting edge 142 and the blade body 141 forms an isosceles triangle 143. When the cutting edge 142 is subjected to a reverse cutting force F from the semiconductor material, and the direction of F is along the angle bisector of the isosceles triangle 143, the torque on one side of the blade body 141 and the second transition portion 130 is M1, and the torque on one side of the base body 110 and the first transition portion 120 is M2. Let M be the bending strength of the tungsten steel, where the tungsten steel (hard alloy) grade is YS2T; density g / cm2: 14.4-14.6; bending strength not less than N / cm2: 2200; hardness not less than HRA:

[0054] 91.5, satisfying the relationship: M1=F*S1 / 4, M2=F*S2 / 4, M1 M2 M, thus the feasibility of cutting semiconductor materials by each parameter of the blade under ideal conditions can be verified. When M1 M2 M is satisfied, the blade body 141 will not crack along the direction of the first transition line 132 or the second transition line 122, thereby improving the service life of the blade body 141.

[0055] In one possible implementation, the isosceles triangle 143 includes a leg 1431. Let F1 be the cutting bias force exerted on the cutting edge 142 by the semiconductor material, and let F1 be in the direction along the leg 1431. At this time, the cutting body 141 on the side away from the leg 1431 forms a first intersection point 133 with the second transition portion 130. The first intersection point 133 generates a torque M3, and the distance between the first intersection point 133 and the leg 1431 is d1. The base 110 on the side away from the leg 1431 forms a second intersection point 123 with the first transition portion 120. The second intersection point 123 generates... The torque generated is M4, and the distance between the second intersection point 123 and the waist side 1431 is d2. The first transition part 120 forms a midpoint 124. The torque generated by the midpoint 124 is M5, and the distance between the midpoint 124 and the waist side 1431 is d3. The following relationships are satisfied: d1=S1*cos(a / 2), d2=L2*sin(a / 2)+[S2*cos(a / 2)] / 2, d3=[L2*sin(a / 2)] / 2, M3=F1*d1, M4=F1*d2, M5=F1*d3, M3M5M4M.In practical applications, since the blade body 141 is an isosceles triangle 143, it includes a waist side 1431. The side of the blade body 141 away from the waist side 1431 forms a first intersection point 133 with the second transition section 130. The first intersection point 133 generates a torque of M3, and the distance between the first intersection point 133 and the waist side 1431 is d1. The side of the base body 110 away from the waist side 1431 forms a second intersection point 123 with the first transition section 120. The second intersection point 123 generates a torque of M4, and the distance between the second intersection point 123 and the waist side 1431 is d2. The first transition section... A midpoint 124 is formed at point 120. The midpoint 124 generates a torque M5, and the distance between the midpoint 124 and the waist edge 1431 is d3. When the cutting edge 142 is subjected to a cutting bias force of semiconductor material F1, and the direction of F1 is along the waist edge 1431, the following relationships are satisfied: d1=S1*cos(a / 2), d2=L2*sin(a / 2)+[S2*cos(a / 2)] / 2, d3=[L2*sin(a / 2)] / 2, M3=F1*d1, M4=F1*d2, M5=F1*d3, M3 M5 M4 M, thus verifying the feasibility of the cutting tool's bending strength under extreme cutting bias force. Specifically, when the cutting edge 142 is subjected to a cutting bias force F1 from the semiconductor material, and this cutting bias force F1 is along the direction of the waist edge 1431, the cutting body 141 on the side away from the waist edge 1431 forms a first intersection point 133 with the second transition portion 130. When the first intersection point 133 generates a torque M3 = F1 * S1 * cos(a / 2)M, it proves that the cutting body 141 will not bend at the first intersection point 133. The base 110 on the side away from the waist edge 1431... When the first transition section 120 forms a second intersection point 123, and the second intersection point 123 generates a torque of M4 = F1 * [L2 * sin(a / 2) + [S2 * cos(a / 2)] / 2]M, it proves that the first transition section 120 will not bend at the second intersection point 123. The distance from the midpoint 124 formed by the first transition section 120 to the waist 1431 is d3, and the midpoint 124 generates a torque of M5 = F1 * [L2 * sin(a / 2)] / 2, it proves that the first transition section 120 will not bend at the midpoint 124.

[0056] Example 2

[0057] This embodiment differs from the subject matter protected in Embodiment 1, specifically in the following ways:

[0058] Please refer to Figure 1-8Embodiment 2 of the present invention provides a process for preparing an ultra-thin sharpened blade, including providing raw materials; homogenizing and slicing the raw materials to obtain a sheet-like body; grinding the sheet-like body to obtain a substrate 110 of equal thickness; and sharpening and polishing one end of the substrate 110 to obtain a cutting edge 140. In the process of sharpening and polishing one end of the substrate 110 to obtain the cutting edge 140, the substrate 110 is vacuum-adsorbed onto a fixture, and the two sides of one end of the substrate 110 are symmetrically polished by the end face of a fine-pile polishing wheel to obtain a cutting edge 142 and a cutting surface, so that the cutting edge 142 is an isosceles triangle and the cutting surface is smooth. In specific applications, tungsten steel raw materials are provided. These raw materials are sliced ​​to obtain sheet-like bodies. These sheets are then ground to a thickness of 0.4 mm to obtain a substrate 110. During polishing, the substrate 110 is vacuum-adsorbed onto a fixture. A fine-particle polishing wheel is used to symmetrically polish both sides of one end of the substrate 110 to obtain a cutting edge 142 and a cutting face. This ensures that the cutting edge 142 forms an ideal isosceles triangle 143, with the included angle α of the isosceles triangle 143 equal to 14°. The cutting face is smoothed by the fine-particle polishing wheel. This allows the cutting edge 142 to cut the semiconductor material, and when the processed surface of the semiconductor material contacts the smooth cutting face, it prevents… The cutting edge prevents scratching of the semiconductor material's processing surface. Furthermore, the gradual cutting of the substrate 110 via a fine-polishing wheel ensures a more precise angle α of 14° in the isosceles triangle 143, placing the cutting edge 142 centered below the substrate 110, with the cutting surfaces located on either side of the cutting edge 142. This allows the cutting edge 142 to cut the semiconductor material more sharply, and the processed surface of the cut semiconductor material slides smoothly against the cutting surfaces, preventing scratching and cracking caused by contact between the substrate 110 and the product surface. Simultaneously, the polishing of the substrate 110 with a fine-polishing wheel to obtain the cutting edge 142 and cutting surfaces effectively prevents breakage or chipping during processing.

[0059] In one possible implementation, the cutting edge 142 and the cutting edge surface are obtained by symmetrically polishing both sides of one end of the substrate 110 with the end face of the fine-pile polishing wheel. This includes polishing both sides of the substrate 110 near the end with the fine-pile polishing wheel to obtain a first transition portion 120, and the first transition portion 120 is shaped like a concave arc 121. The cutting edge 140 is polished with the fine-pile polishing wheel to form the cutting edge 142 and the cutting edge surface. In specific applications, in order to enhance the smoothness of the cutting edge 140 in cutting semiconductors, the waste generated by the cutting edge 142 in cutting semiconductor materials needs to be discharged in a timely manner to avoid the accumulated material chips scratching the processed semiconductor material when they come into contact with the cutting edge surface. Therefore, the first transition portion 120 is obtained by polishing both sides of the substrate 110 near the end with the fine-pile polishing wheel, and the first transition portion 120 is shaped like a concave arc 121. In this way, the waste after cutting can be discharged through the fluid-type concave arc 121. Polishing the cutting edge 140 with the fine-pile polishing wheel can obtain the cutting edge 142 and the cutting edge surface, so that the cutting edge 140 can avoid problems such as breakage or chipping during processing.

[0060] In one possible implementation, the cutting edge 142 and the cutting edge are obtained by symmetrically polishing the two sides of one end of the substrate 110 with the end face of the fine polishing wheel. The second transition portion 130 is obtained by polishing the connection between the first transition portion 120 and the cutting edge with the fine polishing wheel, so that the second transition portion 130 forms a convex arc 131, and the convex arc 131 is smoothly connected to the concave arc 121. In specific applications, since the chipping generated when cutting semiconductor material by the cutting edge 142 is stuck at the corner between the cutting edge and the first transition section 120, some chipping still cannot be discharged through the first transition section 120. Therefore, the connection between the first transition section 120 and the cutting edge is polished by a fine polishing wheel to obtain the second transition section 130, thereby forming a convex arc 131 in the second transition section 130. The convex arc 131 and the concave arc 121 form a smooth, wavy, fluid shape. It is worth noting that the convex arc 131 is a short arc, while the concave arc 121 is a long arc. This is beneficial for discharging a small amount of residual chipping, while not affecting the chip removal speed of the concave arc 121 of the first transition section 120 per unit time, thus avoiding affecting the efficiency of the cutting edge 142 in cutting semiconductor material.

[0061] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the scope of protection of the present invention. Therefore, the scope of protection of this patent should be determined by the appended claims.

Claims

1. An ultra-thin sharpening blade for processing semiconductor materials, characterized in that, include: Matrix; A first transition section, one end of which is connected to the substrate; A second transition section, one end of which is connected to the other end of the first transition section away from the substrate; The blade includes a blade body and a cutting edge connected to one end of the blade body. The other end of the blade body is connected to the other end of the second transition portion. The first transition portion is a bilaterally symmetrical concave arc connected between the base and the second transition portion. The second transition portion is a bilaterally symmetrical convex arc connected between the first transition portion and the blade body. A first transition line is formed at the connection between the blade body and the second transition portion. A second transition line is formed at the connection between the first transition portion and the base, so that the semiconductor material is cut only by the cutting edge, and the semiconductor material deviates from the base between the first transition line and the second transition line. Let the angle between the cutting edge and the blade body be α, the distance from the cutting edge to the first transition line be L1, the distance from the cutting edge to the second transition line be L2, the length of the first transition line be S1, and the length of the second transition line be S2. Satisfying the relation: 13°≤a≤15°； 0.395mm≤S2≤0.405mm; 12.06 <L2 / L1<18.69; 6.58 <S2 / S1≤6.75; 3.16 <L1 / S1<4.84。 2. The ultra-thin sharpening blade for processing semiconductor materials according to claim 1, characterized in that, The radius of the convex arc of the second transition part is R2, R2 = 0.03 mm; the radius of the concave arc of the first transition part is R1, R1 = 5.5 mm.

3. The ultra-thin sharpening blade for processing semiconductor materials according to claim 1 or 2, characterized in that, The angle between the first transition portion and the substrate is b, where b = 4°.

4. The ultra-thin sharpening blade for processing semiconductor materials according to claim 3, characterized in that, The shortest distance between the cross sections of the first transition section is l, where l = 0.05 mm.

5. The ultra-thin sharpening blade for processing semiconductor materials according to claim 1, characterized in that, The length of the base is S, and the distance from the end of the base to the cutting edge is L, wherein 84.9mm≤S≤85.1mm and 22.3mm≤L≤22.5mm.

6. The ultra-thin sharpening blade for processing semiconductor materials according to claim 1, characterized in that, The blade is made of tungsten steel. The connection between the cutting edge and the blade body forms an isosceles triangle. Let F be the reverse cutting force of the semiconductor material on the cutting edge, and let F be the direction along the angle bisector of the isosceles triangle. Let M1 be the torque between the blade body and one side of the second transition part, and let M2 be the torque between the base body and one side of the first transition part. Let M be the bending strength of the tungsten steel. The following relationships are satisfied: M1 = F * S1 / 4, M2 = F * S2 / 4, M1 < M2 < M.

7. The ultra-thin sharpening blade for processing semiconductor materials according to claim 6, characterized in that, The isosceles triangle includes a leg. Let F1 be the cutting force exerted by the semiconductor material on the cutting edge, and let F1 be directed along the leg. At this point, the cutting body on the side furthest from the leg forms a first intersection point with the second transition section. This first intersection point generates a torque M3, and the distance from the first intersection point perpendicular to the leg is d1. The substrate on the side furthest from the leg forms a second intersection point with the first transition section. This second intersection point generates a torque M4, and the distance from the second intersection point perpendicular to the leg is d2. The first transition section has a midpoint, which generates a torque M5, and the distance from the midpoint perpendicular to the leg is d3. The following relationship is satisfied: d1 = S1 * cos(a / 2); d2=L2*sin(a / 2)+[S2*cos(a / 2)] / 2; d3 = [L2*sin(a / 2)] / 2; M3 = F1 * d1; M4 = F1 * d2; M5 = F1 * d3; M3 < M5 < M4 < M.

8. A process for manufacturing ultra-thin sharpening blades, characterized in that, The ultra-thin sharpening blade for processing semiconductor materials according to any one of claims 1 to 7 comprises: Provide raw materials; The raw material is homogenized and sliced ​​to obtain sheet-like bodies; The sheet-like body is ground to obtain a matrix of equal thickness; One end of the substrate is sharpened and polished to obtain a cutting edge; In the process of sharpening and polishing one end of the substrate to obtain the cutting edge, the substrate is vacuum-adsorbed onto the fixture, and the cutting edge and the cutting surface are obtained by symmetrical polishing of both sides of one end of the substrate by the end face of the fine polishing wheel, so that the cutting edge is an isosceles triangle and the cutting surface is smooth.

9. The ultra-thin sharpening blade manufacturing process according to claim 8, characterized in that, The process of symmetrically polishing both sides of one end of the substrate using the end face of a fine-particle polishing wheel to obtain the cutting edge and cutting surface includes: The first transition portion is obtained by polishing the two sides of the substrate near the end with a fine-particle polishing wheel, and the first transition portion is in the shape of a concave arc. The blade is polished by a fine-pile polishing wheel to form the cutting edge and the cutting face.

10. The ultra-thin sharpening blade manufacturing process according to claim 9, characterized in that, The process of symmetrically polishing both sides of one end of the substrate using the end face of a fine-particle polishing wheel to obtain the cutting edge and cutting surface also includes: The second transition portion is obtained by polishing the connection between the first transition portion and the blade surface with a fine-pile polishing wheel, so that the second transition portion forms a convex arc, and the convex arc is smoothly connected to the concave arc.

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