High-temperature-resistant ultraviolet-resistant high-transmittance energy-saving coated glass and manufacturing method thereof

Abstract

The application discloses a high-temperature-resistant, ultraviolet-resistant and high-transparency energy-saving coated glass, which comprises a glass substrate, a layered first isolation layer, an ultraviolet-resistant layer, a Raman scattering energy-saving layer and a first temperature-resistant energy-saving unit arranged on the glass substrate in sequence, wherein the first temperature-resistant energy-saving unit comprises a first dielectric layer, a first metal energy-saving layer, a second dielectric layer and a first anti-oxidation and anti-reflection layer arranged in sequence; the infrared emissivity of the high-temperature-resistant, ultraviolet-resistant and high-transparency energy-saving coated glass is less than about 0.08; and a manufacturing method thereof is also disclosed. The ultraviolet-resistant layer, the Raman scattering energy-saving layer and at least one temperature-resistant energy-saving unit are combined and arranged, so that good energy-saving effect, high transmittance and / or high-temperature resistance are achieved.

Description

TECHNICAL FIELD

[0001] The present application relates to a coated glass and a manufacturing method thereof, in particular to a high-transmittance energy-saving coated glass and a manufacturing method thereof. BACKGROUND

[0002] The existing glass vehicle windows, such as automobile front windshield, vehicle window and awning, high-speed rail vehicle window, bullet train vehicle window, cruise ship vehicle window, etc., need to isolate ultraviolet and additional sunshade curtain in summer when the sun is hot. Most of them currently adopt film pasting to achieve sun protection, but the cost of the film pasting is relatively high. When the infrared rays of sunlight irradiate into the glass, the infrared heat has entered the vehicle; the ultraviolet rays also enter, and the ultraviolet rays have a strong aging function on wood, plastic, screen, human skin, etc. Compared with the existing vehicles, ships, refrigerator glass, etc., blocking a part of the sunlight heat through coating energy saving is an inevitable trend of electric vehicle energy saving, but the ordinary low-e coated glass has problems such as high reflectivity, which easily causes indoor and outdoor light pollution and glare hazards. Therefore, a high-transmittance energy-saving coated glass with high temperature resistance and ultraviolet resistance will gradually replace ordinary automobile glass in the development of front and side windows of electric new energy vehicles. In addition, the existing low-e coated glass cannot completely isolate ultraviolet rays, and the ultraviolet rays have a strong aging function. The ordinary low-e coated glass generally has good energy-saving effect, but the transmittance and high temperature resistance at more than 700 degrees Celsius are not very good. SUMMARY

[0003] The present application aims to propose one or more novel coated glasses for any one of the deficiencies in the prior art or any combination of these deficiencies.

[0004] To this end, some embodiments of the present application provide a high-transmittance energy-saving coated glass with high temperature resistance and ultraviolet resistance, which comprises a glass substrate, a layered first isolation layer, an ultraviolet-resistant layer, a Raman scattering energy-saving layer and a first temperature-resistant energy-saving unit sequentially arranged on the glass substrate, the first temperature-resistant energy-saving unit comprising a first dielectric layer, a first metal energy-saving layer, a second dielectric layer and a first anti-oxidation anti-reflection layer sequentially arranged; the infrared emissivity of the high-transmittance energy-saving coated glass with high temperature resistance and ultraviolet resistance is less than about 0.08.

[0005] In some embodiments, a second temperature-resistant energy-saving unit is further arranged on the first temperature-resistant energy-saving unit, the second temperature-resistant energy-saving unit comprising a third dielectric layer, a second metal energy-saving layer, a fourth dielectric layer and a second anti-oxidation anti-reflection layer sequentially arranged; the infrared emissivity of the high-transmittance energy-saving coated glass with high temperature resistance and ultraviolet resistance is less than about 0.04.

[0006] In some embodiments, a third temperature-resistant energy-saving unit is further included on the second temperature-resistant energy-saving unit, the third temperature-resistant energy-saving unit comprising a fifth dielectric layer, a third metal energy-saving layer, a sixth dielectric layer, and a third anti-oxidation and anti-reflection layer arranged sequentially; and the infrared emissivity of the high-temperature-resistant, anti-ultraviolet and high-transmittance energy-saving coated glass is less than about 0.02.

[0007] In some embodiments, the first temperature-resistant energy-saving unit, the second temperature-resistant energy-saving unit, or the third temperature-resistant energy-saving unit further comprises a second separation layer, and the material of the second separation layer is selected from one or more of silicon aluminum nitride, silicon boron nitride, titanium nitride, boron nitride, aluminum nitride, and zirconium oxide, and the layer thickness is 5-35 nm.

[0008] In some embodiments, the second separation layer further comprises a hardening layer, and the material of the hardening layer is selected from one or more of zirconium oxide and aluminum oxide, and the layer thickness is 35-200 nm.

[0009] Some embodiments of the present application provide a method for manufacturing the above-mentioned high-temperature-resistant, anti-ultraviolet and high-transmittance energy-saving coated glass, which comprises the steps of: providing a glass substrate; a first separation layer forming step; a Raman scattering energy-saving layer forming step; a first dielectric layer forming step; a first metal energy-saving layer forming step; a second dielectric layer forming step; and a first anti-oxidation and anti-reflection layer forming step.

[0010] In some embodiments, the method further comprises a step of forming a second temperature-resistant energy-saving unit on the first temperature-resistant energy-saving unit, which comprises a third dielectric layer forming step; a second metal energy-saving layer forming step; a fourth dielectric layer forming step; and a second anti-oxidation and anti-reflection layer forming step.

[0011] In some embodiments, the method further comprises a step of forming a third temperature-resistant energy-saving unit on the second temperature-resistant energy-saving unit, which comprises a fifth dielectric layer forming step; a third metal energy-saving layer forming step; a sixth dielectric layer forming step; and a third anti-oxidation and anti-reflection layer forming step.

[0012] The present application aims to solve the problem that the existing low-emissivity coated glass cannot completely isolate ultraviolet rays. A high-isolation-capacity anti-ultraviolet layer is added to the separation layer of the glass, which can absorb more than 85% of ultraviolet rays. When the anti-ultraviolet layer is made of transparent oxide films such as indium tin oxide, zinc aluminum oxide, fluorine-doped tin oxide, and zinc boron oxide, it has high transmittance, high ultraviolet absorption, good infrared reflectivity, high carrier concentration, and can also increase the waveguide communication and electromagnetic shielding capacity.

[0013] In addition or alternatively, for the existing low-emissivity coated glass, especially for the use in the vehicle cabin, the windscreen and side window are difficult to deal with the problem of high reflection of light pollution, which is easy to cause eye fatigue. Some embodiments of the present application solve the problem of high reflection of light pollution by adding a Raman scattering energy-saving layer to increase the scattering of the reflected light at the micro-nano scale.

[0014] In addition or alternatively, for the general low-emissivity coated glass, there is a problem that the energy-saving effect is good, but the transmittance and high-temperature resistance of more than 700 degrees Celsius are poor. Some embodiments of the present application propose to combine the ultraviolet-resistant layer, the Raman scattering energy-saving layer, and at least one temperature-resistant energy-saving unit, which achieves good energy-saving effect and realizes high transmittance and / or high-temperature resistance. BRIEF DESCRIPTION OF DRAWINGS

[0015] Further understanding of the nature and advantages of the disclosed technology can be realized by referring to the remaining portions of the specification and the drawings. In the drawings,

[0016] Figure 1 FIG. 1 is a structural schematic diagram of a high-temperature-resistant ultraviolet-resistant high-transmittance energy-saving coated glass according to an embodiment of the present application;

[0017] Figure 2 FIG. 2 is a structural schematic diagram of a high-temperature-resistant ultraviolet-resistant high-transmittance energy-saving coated glass according to another embodiment of the present application;

[0018] Figure 3 FIG. 3 is a structural schematic diagram of a high-temperature-resistant ultraviolet-resistant high-transmittance energy-saving coated glass according to another embodiment of the present application. DETAILED DESCRIPTION

[0019] The present application provides several views as schematic diagrams. It should be understood that these figures are for illustrative purposes only and should not be considered to scale unless specifically stated otherwise. In addition, as a schematic diagram, these figures are provided to help understanding and may not include all aspects or information compared to actual representative figures, and may include exaggerated materials for illustrative purposes.

[0020] The subject matter of embodiments of the present application is described with specificity herein to meet statutory requirements, but this description is not necessarily intended to limit the scope of claims. The claimed subject matter can be embodied in other ways, can include different elements or steps, and can be used in combination with other existing or future technologies. Unless specifically described as being in a particular order, the description should not be interpreted as implying any particular order or arrangement between the various steps or elements.

[0021] The application provides the following scheme: since the existing low-emissivity coated glass cannot completely isolate ultraviolet rays, and the ultraviolet rays have strong aging function, an ultraviolet-resistant layer with high isolation capacity is added on the isolation layer of the glass, which can absorb more than 85% of ultraviolet rays to reduce the influence of ultraviolet rays. In addition, the transparent oxide film such as indium tin oxide (ITO), zinc aluminum oxide (AZO), fluorine-doped tin oxide (FTO), zinc boron oxide (BZO), and the like has high transmittance, high ultraviolet absorption, good infrared reflectivity, high carrier concentration, and can also increase the waveguide communication and electromagnetic shielding capacity.

[0022] Although the existing low-emissivity coated glass has good infrared reflection capacity, at present, the main source of external environmental light pollution, especially when used in the driving cabin of vehicles and ships, the windscreen and side window have high reflection light pollution, which has great safety hazards and eye fatigue. The application can increase scattering at the micro-nano scale by adding a Raman scattering energy-saving layer to solve the reflected light pollution.

[0023] In addition, the ordinary low-emissivity coated glass generally has good energy-saving effect but poor transmittance and high-temperature resistance of more than 700 degrees Celsius. Some embodiments of the application provide that the ultraviolet-resistant layer, the Raman scattering energy-saving layer and at least one temperature-resistant energy-saving unit are combined and arranged, which not only achieves good energy-saving effect but also realizes the effects of high transmittance and / or high-temperature resistance, and solves the urgent needs in the field.

[0024] Some embodiments of the present application provide a high-temperature-resistant, anti-ultraviolet, high-transmittance, energy-saving coated glass, comprising a glass substrate, a layered first separation layer, an anti-ultraviolet layer, a Raman scattering energy-saving layer, and a first temperature-resistant energy-saving unit sequentially arranged on the glass substrate, wherein the first temperature-resistant energy-saving unit comprises a first dielectric layer, a first metal energy-saving layer, a second dielectric layer, and a first anti-oxidation and anti-reflection layer sequentially arranged; the infrared emissivity of the high-temperature-resistant, anti-ultraviolet, high-transmittance, energy-saving coated glass is less than about 0.08; the glass substrate is ordinary glass, colored glass, or ultra-white glass, and the thickness thereof is 3-10 mm; the material of the first separation layer is selected from one or more of silicon aluminum nitride (SiAlNx), silicon boron nitride (SiBNx), titanium nitride (TiNx), boron nitride (BNx), aluminum nitride (AlNx), and zirconium oxide (ZrOx), and the layer thickness is 5-35 nm; the material of the anti-ultraviolet layer is selected from one or more of indium tin oxide (ITO), aluminum zinc oxide (AZO), boron zinc oxide (BZO), zinc tin oxide (ZnSnOx), gallium zinc oxide (GZO), indium gallium zinc oxide (IGZO), and fluorine-doped tin oxide (FTO), and the layer thickness is 10-120 nm, and the resistance is below 100 ohm; the material of the Raman scattering energy-saving layer is selected from one or more of tungsten oxide (WOx), tungsten nickel oxide (WNiOx), vanadium oxide (VxOx), titanium oxide (TiOx), graphene, and aluminum oxide (AlOx). Preferably, the material of the Raman scattering energy-saving layer is tungsten oxide (WOx), and the layer thickness is 50-250 nm; the material of the first dielectric layer is selected from one or more of nickel chromium (NiCr), tungsten iridium (WIr), and titanium aluminum (TiAl), and the layer thickness is 10-50 nm; the material of the first metal energy-saving layer is selected from one or more of silver (Ag), copper (Cu), aluminum (Al), and gold (Au), and the layer thickness is 3-50 nm; the material of the second dielectric layer is selected from one or more of zinc tin (ZnSn), indium tin (InSn), and zinc aluminum (ZnAl), and the layer thickness is 20-80 nm; the material of the first anti-oxidation and anti-reflection layer is selected from one or more of zinc tin oxide (ZnSnOx), zinc tin oxide (ZnSnOX) + silicon oxide (SiOx), zinc tin oxide (ZnSnOx) + titanium oxide (TiOx), indium tin oxide (InSnOx) + silicon oxide (SiOx), indium tin oxide (InSnOx) + titanium oxide (TiOx), aluminum zinc oxide (AZO), and magnesium fluoride (MgFx), and the layer thickness is 30-160 nm.

[0025] In some embodiments, a second temperature-resistant energy-saving unit is further included on the first temperature-resistant energy-saving unit, the second temperature-resistant energy-saving unit including a third dielectric layer, a second metal energy-saving layer, a fourth dielectric layer, and a second anti-oxidation and anti-reflection layer arranged in sequence; the infrared emissivity of the high-temperature-resistant and ultraviolet-resistant high-transmittance energy-saving coated glass is less than about 0.04; the material of the third dielectric layer is selected from one or more of nickel-chromium (NiCr), tungsten-iridium (WIr), titanium-aluminum (TiAl), the layer thickness being 10-50 nm; the material of the second metal energy-saving layer is selected from one or more of silver (Ag), copper (Cu), aluminum (Al), and gold (Au), the layer thickness being 3-50 nm; the material of the third dielectric layer is selected from one or more of zinc-tin (ZnSn), indium-tin (InSn), and zinc-aluminum (ZnAl), the layer thickness being 20-80 nm; the material of the second anti-oxidation and anti-reflection layer is selected from one or more of zinc-tin oxide (ZnSnOx), zinc-tin oxide (ZnSnOx) + silicon oxide (SiOx), zinc-tin oxide (ZnSnOx) + titanium oxide (TiOx), indium-tin oxide (InSnOx) + silicon oxide (SiOx), indium-tin oxide (InSnOx) + titanium oxide (TiOx), zinc-aluminum oxide (AZO), and magnesium fluoride (MgFx), the layer thickness being 30-160 nm.

[0026] In some embodiments, a third temperature-resistant energy-saving unit is further included on the second temperature-resistant energy-saving unit, the third temperature-resistant energy-saving unit including a fifth dielectric layer, a third metal energy-saving layer, a sixth dielectric layer, and a third anti-oxidation and anti-reflection layer arranged in sequence; the infrared emissivity of the high-temperature-resistant and ultraviolet-resistant high-transmittance energy-saving coated glass is less than about 0.02; the material of the fifth dielectric layer is selected from one or more of nickel-chromium (NiCr), tungsten-iridium (WIr), titanium-aluminum (TiAl), the layer thickness being 10-50 nm; the material of the third metal energy-saving layer is selected from one or more of silver (Ag), copper (Cu), aluminum (Al), and gold (Au), the layer thickness being 3-50 nm; the material of the sixth dielectric layer is selected from one or more of zinc-tin (ZnSn), indium-tin (InSn), and zinc-aluminum (ZnAl), the layer thickness being 20-80 nm; the material of the third anti-oxidation and anti-reflection layer is selected from one or more of zinc-tin oxide (ZnSnOx), zinc-tin oxide (ZnSnOx) + silicon oxide (SiOx), zinc-tin oxide (ZnSnOx) + titanium oxide (TiOx), indium-tin oxide (InSnOx) + silicon oxide (SiOx), indium-tin oxide (InSnOx) + titanium oxide (TiOx), zinc-aluminum oxide (AZO), and magnesium fluoride (MgFx), the layer thickness being 30-160 nm.

[0027] In some embodiments, the first temperature-resistant energy-saving unit, the second temperature-resistant energy-saving unit, or the third temperature-resistant energy-saving unit further comprises a second isolation layer, and the material of the second isolation layer is selected from one or more of silicon aluminum nitride (SiAlNx), silicon boron nitride (SiBNx), titanium nitride (TiNx), boron nitride (BNx), aluminum nitride (AlNx), and zirconium oxide (ZrOx), and the thickness of the layer is 5-35 nm.

[0028] In some embodiments, the second isolation layer further comprises a hardening layer, and the material of the hardening layer is selected from one or more of zirconium oxide (ZrOx) and aluminum oxide (AlOx), and the thickness of the layer is 35-200 nm.

[0029] Some embodiments of the present application disclose a method for manufacturing any of the above-mentioned high-temperature-resistant, anti-ultraviolet, and high-transmittance energy-saving coated glass, which comprises the following steps: providing a glass substrate; a first isolation layer forming step, which comprises depositing silicon aluminum nitride (SiAlNx) on the glass substrate by vacuum coating, evaporation coating, or the like, and the thickness of the layer is 5-35 nm; an anti-ultraviolet layer forming step, which comprises depositing indium tin oxide (ITO) on the isolation layer by vacuum coating, evaporation coating, or the like, and the thickness of the layer is 10-120 nm, and the resistance is less than 100 ohm, so as to effectively absorb more than 90% of ultraviolet rays; a Raman scattering energy-saving layer forming step, which comprises depositing tungsten oxide (WOx) on the anti-ultraviolet layer by vacuum coating, evaporation coating, or the like, and the thickness of the layer is 50-250 nm, so as to reduce the direct reflectivity of infrared rays by more than 65% and form the effect of scattering infrared rays; a first temperature-resistant energy-saving unit forming step, which comprises the following steps: a first dielectric layer forming step, which comprises depositing nickel chromium (NiCr) on the Raman scattering energy-saving layer by vacuum coating, evaporation coating, or the like, and the thickness of the layer is 10-50 nm, so as to realize the functions of better oxidation resistance, high film quality, and high adhesion; a first metal energy-saving layer forming step, which comprises depositing silver (Ag) on the first dielectric layer by vacuum coating, evaporation coating, or the like, and the thickness of the layer is 3-50 nm, so as to enhance the infrared energy-saving effect; a second dielectric layer forming step, which comprises depositing zinc tin (ZnSn) on the first metal energy-saving layer by vacuum coating, evaporation coating, or the like, and the thickness of the layer is 20-80 nm; and a first anti-oxidation and anti-fogging layer forming step, which comprises depositing zinc tin oxide (ZnSnOx) on the second dielectric layer by vacuum coating, evaporation coating, or the like, and the thickness of the layer is 30-160 nm, so as to increase the overall transmittance of the film layer to about 78%-82%.

[0030] In some embodiments of the method, the method further includes a step of forming a second temperature-resistant energy-saving unit on the first temperature-resistant energy-saving unit. This step includes a third dielectric layer formation step, which involves depositing nickel-chromium (NiCr) on a first anti-oxidation and anti-reflection layer using methods such as vacuum deposition or evaporation deposition, with a layer thickness of 10 to 50 nm; a second metal energy-saving layer formation step, which involves depositing silver (Ag) on ​​the third dielectric layer using methods such as vacuum deposition or evaporation deposition, with a layer thickness of 3 to 50 nm; a fourth dielectric layer formation step, which involves depositing zinc-tin (ZnSn) on the second metal energy-saving layer using methods such as vacuum deposition or evaporation deposition, with a layer thickness of 20 to 80 nm; and a second anti-oxidation and anti-reflection layer formation step, which involves depositing zinc-tin oxide (ZnSnOx) on the fourth dielectric layer using methods such as vacuum deposition or evaporation deposition, with a layer thickness of 30 to 160 nm; thereby increasing the overall transmittance of the film layer to approximately 76.5% to 78%.

[0031] In some embodiments of the method, the method further includes a step of forming a third temperature-resistant energy-saving unit on the second temperature-resistant energy-saving unit. This step includes a fifth dielectric layer formation step, which involves depositing nickel-chromium (NiCr) on the second anti-oxidation and anti-reflection layer by methods such as vacuum deposition and evaporation deposition, with a layer thickness of 10 to 50 nm; a third metal energy-saving layer formation step, which involves depositing (Ag) on ​​the third dielectric layer by methods such as vacuum deposition and evaporation deposition, with a layer thickness of 3 to 50 nm; a sixth dielectric layer formation step, which involves depositing zinc-tin (ZnSn) on the third metal energy-saving layer by methods such as vacuum deposition and evaporation deposition, with a layer thickness of 20 to 80 nm; and a third anti-oxidation and anti-reflection layer formation step, which involves depositing zinc-tin oxide (ZnSnOx) on the sixth dielectric layer by methods such as vacuum deposition and evaporation deposition, with a layer thickness of 30 to 160 nm, to further enhance infrared light transmission and improve the overall transmittance of the film layer to approximately 74.5% to 76.5%.

[0032]

Example 1

[0033] The high-temperature resistant, UV-resistant, high-transmittance energy-saving coated glass structure in Example 1 is as follows: Figure 1 As shown, it includes a glass substrate 101, and layered first isolation layer 102, anti-ultraviolet layer 103, Raman scattering energy-saving layer 104, and first temperature-resistant energy-saving unit 105 sequentially disposed on the glass substrate 101, including a first dielectric layer 151, a first metal energy-saving layer 152, a second dielectric layer 153, a first anti-oxidation anti-reflection layer 154, a second isolation layer 106, and a hardening layer 107.

[0034] The manufacturing sequence and basic functions of the above layers are as follows: First, an isolation layer, namely the first isolation layer 102, is deposited on the glass substrate 101 to reduce the migration of sodium and potassium ions on the glass surface and prevent mold growth. Then, an anti-ultraviolet layer 103 is deposited on the first isolation layer 102 to fully block ultraviolet rays. After the anti-ultraviolet layer 103 is completed, a Raman scattering energy-saving layer 104 is deposited to give the glass surface a nano-microstructure (or nano-microstructure) infrared scattering function and a certain infrared energy-saving effect. Next, a first dielectric layer 151 is deposited on the Raman scattering energy-saving layer 104, and a first metal energy-saving layer 152 is deposited on the first dielectric layer 151. The metal energy-saving layer 152 has good infrared reflection function, which can achieve low-radiation energy saving and ensure the first metal energy saving. The first metal energy-saving layer 152 has high conductivity and film continuity, and also has a certain anti-oxidation function at high temperatures. A second dielectric layer 153 is then deposited on the first metal energy-saving layer 152 to ensure the high-temperature anti-oxidation protection and tensile ductility of the first metal energy-saving layer. An anti-oxidation and anti-reflection layer, namely the first anti-oxidation and anti-reflection layer 154, is then deposited on the second dielectric layer 153 to ensure the film's high-temperature resistance, such as a temperature resistance of 700 degrees Celsius, and anti-reflection function, i.e., a light transmittance > 74.5%. Optionally, a second isolation layer 106 can be deposited on the first anti-oxidation and anti-reflection layer 154 to improve the overall ability of the film to isolate water vapor and resist oxidation at high temperatures, and to ensure that the porosity of the inorganic film is not too large. Optionally, a hardening layer 107 can be deposited on the outermost layer to ensure the hardness and scratch resistance of the outermost part of the film.

[0035] The material composition and dimensions of each of the above layers are as follows:

[0036] The glass substrate 101 can be ordinary glass, colored glass or ultra-clear glass, and its thickness can be 3 to 10 mm.

[0037] The first isolation layer 102 and the second isolation layer 106 are composed of materials selected from silicon aluminum nitride (SiAlN). x ), silicon boron nitride (SiBN) x Titanium nitride (TiN) x Boron nitride (BNx), aluminum nitride (AlNx), zirconium oxide (ZrO) x One or more of the following, with varying thicknesses. Preferably, silicon aluminum nitride (SiAlN) is used. x The film thickness ranges from 5 to 35 nm.

[0038] The UV-resistant layer 103 consists of materials selected from indium tin oxide (ITO), aluminum zinc oxide (AZO), boron zinc oxide (BZO), and tin zinc oxide (ZnSnO). x One or more of zinc gallium oxide (GZO), zinc indium gallium oxide (IGZO), and fluorine-doped tin oxide (FTO). Indium tin oxide (ITO) is preferred. The film thickness is 10 to 120 nm, and the resistance is below 100 ohms.

[0039] Raman scattering energy-saving layer 104 composition: material selected from one or more of tungsten oxide (WO x ), tungsten nickel oxide (WNiO x ), vanadium oxide (VxOx), titanium oxide (TiOx), graphene, aluminum oxide (AlOx). Preferably tungsten oxide (WO x ). Film thickness is 50 to 250 nm.

[0040] The first dielectric layer 151 composition: material selected from one or more of nickel chromium (NiCr), tungsten iridium (WIr), titanium aluminum (TiAl), one or more. Preferably nickel chromium (NiCr). Film thickness is 10 to 50 nm.

[0041] The first metal energy-saving layer 152 composition: material selected from one or more of silver (Ag), copper (Cu), aluminum (Al), gold (Au). Preferably silver (Ag). Film thickness is 3 to 50 nm.

[0042] The second dielectric layer 153 composition: material selected from one or more of zinc tin (ZnSn), indium tin (InSn), zinc aluminum (ZnAl). Preferably zinc tin (ZnSn). Film thickness is 20 to 80 nm.

[0043] The first anti-oxidation anti-reflection layer 154 composition: material selected from one or more of zinc tin oxide (ZnSnOx), zinc tin oxide (ZnSnOx) + silicon oxide (SiOx), zinc tin oxide (ZnSnOx) + titanium oxide (TiOx), indium tin oxide (InSnOx) + silicon oxide (SiOx), indium tin oxide (InSnOx) + titanium oxide (TiOx), zinc aluminum oxide (AZO), magnesium fluoride (MgFx). Preferably zinc tin oxide (ZnSnOx). Film thickness is 30 to 160 nm.

[0044] Hardening layer 107 composition: material selected from one or more of zirconium oxide (ZrOx), aluminum oxide (AlOx). Preferably zirconium oxide (ZrOx). Film thickness is 35 to 200 nm.

[0045] The high-temperature-resistant ultraviolet-resistant high-transmittance energy-saving coated glass in Example 1 can be made by the following manufacturing process:

[0046] Step S101, providing a common glass substrate;

[0047] Step S102, the first isolation layer 102 formation step: by vacuum coating, evaporation coating and other methods to deposit on the glass substrate 101, film thickness is 5 to 35 nm. Material selected from material selected from silicon aluminum nitride (SiAlN x ).

[0048] Step S103, anti-ultraviolet layer 103 formation step: deposited on the isolation layer by vacuum plating, evaporation plating and other methods, film thickness is 10 to 120 nm, resistance <100 ohm ohm, can effectively absorb more than 90% of ultraviolet rays. Material for indium tin oxide (ITO).

[0049] Step S104, Raman scattering energy-saving layer 104 formation step: deposited on the anti-ultraviolet layer 103 by vacuum plating, evaporation plating and other methods, film thickness is 50 to 250 nm. Material for tungsten oxide (WO x ). Can reduce the infrared direct reflectivity of more than 65%, form the effect of scattering infrared.

[0050] Step S151, the first dielectric layer 151 formation step: deposited on the Raman scattering energy-saving layer 104 by vacuum plating, evaporation plating and other methods, film thickness is 10 to 50 nm. Can realize better oxidation resistance, high film quality, high adhesion. Material for nickel chromium (NiCr).

[0051] Step S152, the first metal energy-saving layer 252 formation step: deposited on the first dielectric layer 151 by vacuum plating, evaporation plating and other methods, film thickness is 3 to 50 nm. Material for silver (Ag). This layer mainly functions in that it has a strong infrared energy-saving effect.

[0052] Step S153, the second dielectric layer 253 formation step: deposited on the first metal energy-saving layer 152 by vacuum plating, evaporation plating and other methods, film thickness is 20 to 80 nm. Material for zinc tin (ZnSn).

[0053] Step S154, the first anti-oxidation anti-reflection layer 254 formation step: deposited on the second dielectric layer 153 by vacuum plating, evaporation plating and other methods, film thickness is 30 to 160 nm. Material for zinc tin oxide (ZnSnOx). The setting of this layer can realize the stability of 700 degrees atmospheric baking, improve the overall transmittance of the film layer to more than 75%, so as to realize the high temperature resistance and oxidation resistance and high transmittance of the film.

[0054] Step S106, the second isolation layer 106 formation step: deposited on the first anti-oxidation anti-reflection layer 254 by vacuum plating, evaporation plating and other methods, film thickness is 35 to 180 nm. Material for silicon aluminum nitride (SiAlN x ). This layer can further improve the water vapor barrier ability and high temperature stability and oxidation resistance of the film layer.

[0055] Step S107, hard layer 107 formation step: deposited on the second isolation layer 106 by vacuum plating, evaporation plating and other methods, film thickness is 35 to 200 nm. Material for zirconium oxide (ZrO xThe surface hardness of the coated film can reach 8H or above, which can meet the wear resistance standard of conventional products, and also meet the wear resistance, acid and alkali resistance and boiling water resistance test standards.

[0056] The coated glass prepared by the method of this embodiment of the present application has the following technical effects: the anti-ultraviolet layer can absorb 90% of ultraviolet rays, preventing the aging of plastics, clothes, electronic products, leather and skin caused by sunlight. The application of the Raman scattering energy-saving layer can reduce at least 65% of light pollution, greatly reducing the safety hazards and eye fatigue. The protection of the high-temperature resistant film layer, the anti-reflection layer and the hardening film layer can ensure the stability of high-temperature performance, the high transmittance, and the wear resistance, acid and alkali resistance and boiling water resistance.

[0057] As the infrared reflection functional layer of the energy-saving glass, the silver layer as the metal energy-saving layer is easily oxidized when it is made to a very low infrared emissivity and a better energy-saving effect, such as a double silver layer (i.e., a metal energy-saving layer including two silver layers) and above. The single thickness of the silver layer is thick, which can cause easy water vapor corrosion and high-temperature oxidation. Therefore, by introducing the anti-ultraviolet layer and the Raman scattering energy-saving layer, the anti-ultraviolet layer has the infrared reflection energy-saving function due to the high carrier concentration, the Raman scattering energy-saving layer has the infrared absorption and scattering functions and also has the energy-saving effect, and the infrared reflection energy-saving function of the silver layer forms a composite infrared energy-saving effect. The low infrared radiation and the improved energy-saving effect can be achieved in the case that the single silver layer is thin, such as less than 20nm, less than 10nm and less than 5nm. At the same time, the anti-ultraviolet layer and the Raman scattering energy-saving layer are both high-transmittance thin films with good high-temperature stability. Therefore, the double silver layer coated glass with the anti-ultraviolet layer and the Raman scattering energy-saving layer has improved film transmittance and high-temperature stability compared with the ordinary double silver layer structure.

[0058]

[0059] A specific implementation of embodiment 1 is shown in Table 1 as follows:

[0060] Table 1

[0061]

[0062] Through experiments, the transmittance of the coated glass of embodiment 1-1 is about 76%, the infrared radiation value is about 0.065, and the direct infrared blocking is about 50%; the transmittance of the coated glass of embodiment 1-2 is about 78%, the infrared radiation value is about 0.065, and the direct infrared blocking is about 50%.

[0063]

Embodiment 2

[0064] Figure 2The high-temperature resistant ultraviolet resistant high-transmittance energy-saving coated glass in Example 2 of the present application is shown in the figure, which shares most of the structure with the structure in Example 1, and the difference is that two temperature-resistant energy-saving units, i.e. the first temperature-resistant energy-saving unit 205 and the second temperature-resistant energy-saving unit 208, are continuously deposited. That is, there are two groups of dielectric layer + metal energy-saving layer + dielectric layer + oxidation-resistant anti-reflection layer structure. Specifically, the high-temperature resistant ultraviolet resistant high-transmittance energy-saving coated glass in the present embodiment comprises a glass substrate 201, and a first separation layer 202, an ultraviolet resistant layer 203, a Raman scattering energy-saving layer 204, a first temperature-resistant energy-saving unit 205 comprising a first dielectric layer 251, a first metal energy-saving layer 252, a second dielectric layer 253, a first oxidation-resistant anti-reflection layer 254, a second temperature-resistant energy-saving unit 208 comprising a third dielectric layer 281, a second metal energy-saving layer 282, a fourth dielectric layer 283, a second oxidation-resistant anti-reflection layer 284, a second separation layer 206 and a hardening layer 207 deposited in sequence on the glass substrate 201.

[0065] Such a structure can further protect the high-temperature stability and oxidation resistance of the metal energy-saving layer, avoiding the failure of the function after high-temperature treatment; the thickness of the second temperature-resistant energy-saving unit can be controlled to be the same as that of the first temperature-resistant energy-saving unit, especially the metal energy-saving layer in the second temperature-resistant energy-saving unit can be controlled to have the same thickness as that of the metal energy-saving layer in the second temperature-resistant energy-saving unit, so as to realize the thickening of the overall metal energy-saving layer, such as the silver layer, thereby improving the energy-saving effect. Of course, it should be understood by those skilled in the art that the first temperature-resistant energy-saving unit and the second temperature-resistant energy-saving unit can also have different thicknesses according to the overall parameters of the coated glass, especially the metal energy-saving layers in the first temperature-resistant energy-saving unit and the second temperature-resistant energy-saving unit can also be determined to have different thicknesses.

[0066] In contrast, if the thickness of the metal energy-saving layer, such as the silver layer, in Example 1 is simply increased, the visible light transmittance will be greatly reduced, therefore, the secondary repeated multilayer film arrangement of the metal energy-saving layer in Example 2 can realize better energy-saving effect with less reduction of visible light transmittance.

[0067] The materials of each layer in the coated glass in Example 2 are as follows:

[0068] The glass substrate 201 can be ordinary glass, colored glass or ultra-white glass, and the thickness can be 3-10 mm.

[0069] The first separation layer 202 and the second separation layer 206 are composed of materials selected from silicon aluminum nitride (SiAlN x ), silicon boron nitride (SiBN x ), titanium nitride (TiN x ), boron nitride (BNx), aluminum nitride (AlNx), zirconium oxide (ZrOx ) one or more of indium tin oxide (ITO), aluminum zinc oxide (AZO), boron zinc oxide (BZO), tin zinc oxide (ZnSnO x ).

[0070] Anti-ultraviolet layer 203 component: material selected from one or more of indium tin oxide (ITO), aluminum zinc oxide (AZO), boron zinc oxide (BZO), tin zinc oxide (ZnSnO x ), gallium zinc oxide (GZO), indium gallium zinc oxide (IGZO), fluorine-doped tin oxide (FTO).

[0071] Raman scattering energy-saving layer 204 component: material selected from one or more of tungsten oxide (WO x ), tungsten nickel oxide (WNiO x ), vanadium oxide (VxOx), titanium oxide (TiOx), graphene, aluminum oxide (AlOx).

[0072] First dielectric layer 251, third dielectric layer 281 component: material selected from one or more of nickel chromium (NiCr), tungsten iridium (WIr), titanium aluminum (TiAl).

[0073] First metal energy-saving layer 252, second metal energy-saving layer 282 component: material selected from one or more of silver (Ag), copper (Cu), aluminum (Al), gold (Au).

[0074] Second dielectric layer 253, fourth dielectric layer 283 component: material selected from one or more of zinc tin (ZnSn), indium tin (InSn), zinc aluminum (ZnAl).

[0075] First anti-oxidation anti-reflection layer 254, second anti-oxidation anti-reflection layer 284 component: material selected from one or more of zinc tin oxide (ZnSnOx), zinc tin oxide (ZnSnOx) + silicon oxide (SiOx), zinc tin oxide (ZnSnOx) + titanium oxide (TiOx), indium tin oxide (InSnOx) + silicon oxide (SiOx), indium tin oxide (InSnOx) + titanium oxide (TiOx), aluminum zinc oxide (AZO), magnesium fluoride (MgFx).

[0076] Hardening layer 207 component: material selected from one or more of zirconium oxide (ZrOx), aluminum oxide (AlOx).

[0077] The high-temperature-resistant anti-ultraviolet high-transmittance energy-saving coated glass in Example 2 can be made by the following manufacturing process:

[0078] Step S201, providing a common glass substrate;

[0079] Step S202, the first isolation layer 202 formation step: by vacuum coating, evaporation coating and other methods such as deposition on the glass substrate 201, film thickness is 5 to 35 nm. Material for silicon aluminum nitride (SiAlN x ).

[0080] Step S203, the anti-ultraviolet layer 203 formation step: by vacuum coating, evaporation coating and other methods such as deposition on the isolation layer, film thickness is 10 to 120 nm, resistance <100 ohm below, can effectively absorb ultraviolet 90% above. Material for indium tin oxide (ITO).

[0081] Step S204, the Raman scattering energy-saving layer 204 formation step: by vacuum coating, evaporation coating and other methods such as deposition on the anti-ultraviolet layer 203, film thickness is 50 to 250 nm. Material for tungsten oxide (WO x ). Can reduce the infrared direct reflectivity 65% above, form the effect of scattering infrared.

[0082] Step S251, the first dielectric layer 251 formation step: by vacuum coating, evaporation coating and other methods such as deposition on the Raman scattering energy-saving layer 204, film thickness is 10 to 50 nm. Can realize the function of good oxidation resistance, high film quality, high adhesion. Material for nickel chromium (NiCr).

[0083] Step S252, the first metal energy-saving layer 252 formation step: by vacuum coating, evaporation coating and other methods such as deposition on the first dielectric layer 251, film thickness is 3 to 50 nm. Material for silver (Ag). This layer mainly functions in that it has a very strong infrared energy-saving effect, and can also achieve single layer / double layer / three layer energy-saving effect through several layers of stacking.

[0084] Step S253, the second dielectric layer 253 formation step: by vacuum coating, evaporation coating and other methods such as deposition on the first metal energy-saving layer 252, film thickness is 20 to 80 nm. Material for zinc tin (ZnSn).

[0085] Step S254, the first oxidation resistance and anti-reflection layer 254 formation step: by vacuum coating, evaporation coating and other methods such as deposition on the second dielectric layer 253, film thickness is 30 to 160 nm. Material for zinc tin oxide (ZnSnOx). Can realize the stability of 700 degrees atmospheric baking, improve the overall transmittance of the film layer to 74.5 % above, so as to realize the high temperature resistance and oxidation resistance of the thin film and high transmittance.

[0086] Step S281, the third dielectric layer 281 formation step: by vacuum coating, evaporation coating and other methods such as deposition on the first oxidation resistance and anti-reflection layer 254, film thickness is 10 to 50 nm. Can realize the function of good oxidation resistance, high film quality, high adhesion. Material for nickel chromium (NiCr).

[0087] Step S282, second metal energy-saving layer 282 forming step: deposited on the third dielectric layer 281 by vacuum plating, evaporation plating and other methods, film thickness is 3 to 50 nm. The material is silver (Ag). The main function of this layer is to have a strong infrared energy-saving effect.

[0088] Step S283, fourth dielectric layer 283 forming step: deposited on the second metal energy-saving layer 282 by vacuum plating, evaporation plating and other methods, film thickness is 20 to 80 nm. The material is zinc tin (ZnSn).

[0089] Step S284, second anti-oxidation and anti-reflection layer 284 forming step: deposited on the fourth dielectric layer 283 by vacuum plating, evaporation plating and other methods, film thickness is 30 to 160 nm. The material is zinc tin oxide (ZnSnOx). The stability of 700 degrees atmospheric baking can be realized, the overall transmittance of the film layer is improved to more than 74.5%, so as to realize the high temperature resistance, oxidation resistance and high transmittance of the film.

[0090] Step S206, second isolation layer 206 forming step: deposited on the second anti-oxidation and anti-reflection layer 284 by vacuum plating, evaporation plating and other methods, film thickness is 35 to 180 nm. The material is silicon aluminum nitride (SiAlN x ). The water vapor barrier ability, high temperature stability and oxidation resistance of the film layer can be further improved.

[0091] Step S207, hard layer 207 forming step: deposited on the second isolation layer 206 by vacuum plating, evaporation plating and other methods, film thickness is 35 to 200 nm. The material is zirconium oxide (ZrO x ). The surface hardness of the plated film surface can be as high as 8H or more, which can meet the wear resistance standard of conventional products, and also meet the wear resistance, acid and alkali resistance and boiling water experiment standard.

[0092] As described above, although only one kind of material is given for a certain layer in the above manufacturing method, it should be understood that this kind of material can be replaced by the material explicitly indicated in the embodiment, the combination of materials, or its equivalent material or combination. The result is that for layers with the same function, for example, the first dielectric layer 251 and the third dielectric layer 281 can be made of the same material, or different materials. Their thicknesses can be the same or different.

[0093] One specific embodiment 2-1, 2-2 of embodiment 2 is shown in Table 2 as follows:

[0094] Table 2

[0095]

[0096] According to experiments, the transmittance of the coated glass of Example 2-1 and 2-2 in Table 2 is about 76.5%, the infrared radiation value is about 0.045, and the direct infrared blocking is about 73%.

[0097] [Example 3]

[0098] Figure 3 As shown in Example 3 of the present application, in Figure 3 As shown, the example is in Figure 2 As shown in Example 2, a third temperature-resistant energy-saving unit 309 is additionally added. The third temperature-resistant energy-saving unit 309 has the same function and effect, and the essential point is to achieve better energy-saving effect and lower infrared radiation on the one hand, and to maintain a certain visible light transmittance on the other hand.

[0099] Specifically, the high-temperature-resistant ultraviolet-resistant high-transmittance energy-saving coated glass in the embodiment includes a glass substrate 301, and a first separation layer 302, an ultraviolet-resistant layer 303, a Raman scattering energy-saving layer 304, a first temperature-resistant energy-saving unit 305 including a first dielectric layer 351, a first metal energy-saving layer 352, a second dielectric layer 353, and a first oxidation-resistant anti-reflective layer 354, deposited in sequence from the glass substrate 301; a second temperature-resistant energy-saving unit 308 including a third dielectric layer 381, a second metal energy-saving layer 382, a fourth dielectric layer 383, and a second oxidation-resistant anti-reflective layer 384; a third temperature-resistant energy-saving unit 309 including a fifth dielectric layer 391, a third metal energy-saving layer 392, a sixth dielectric layer 393, and a third oxidation-resistant anti-reflective layer 394; a second separation layer 306 and a hardening layer 307.

[0100] Such a structure can further protect the high-temperature stability and oxidation resistance of the metal energy-saving layer, and avoid the failure of the function after high-temperature treatment; the thickness of the third temperature-resistant energy-saving unit can be the same as that of the second temperature-resistant energy-saving unit and one or both of the metal energy-saving layer in the first temperature-resistant energy-saving unit, especially the thickness of the metal energy-saving layer in the third temperature-resistant energy-saving unit is the same as that of one or both of the metal energy-saving layer in the second temperature-resistant energy-saving unit and the metal energy-saving layer in the first temperature-resistant energy-saving unit, so as to realize the thickening of the overall metal energy-saving layer, such as the silver layer, thereby improving the energy-saving effect. Of course, it should be understood by those skilled in the art that the first temperature-resistant energy-saving unit, the second temperature-resistant energy-saving unit and the third temperature-resistant energy-saving unit can also have different thicknesses according to the overall parameters of the coated glass, especially the metal energy-saving layer in the first temperature-resistant energy-saving unit, the second temperature-resistant energy-saving unit and the third temperature-resistant energy-saving unit can also be determined to have different thicknesses.

[0101] The materials of each layer of the coated glass in Example 3 are as follows:

[0102] The glass substrate 301 can be ordinary glass, colored glass or super white glass, and the thickness can be 3-10 mm.

[0103] The first isolation layer 302 and the second isolation layer 306 are composed of one or more materials selected from silicon aluminum nitride (SiAlN x ), silicon boron nitride (SiBN x ), titanium nitride (TiN x ), boron nitride (BNx), aluminum nitride (AlNx), zirconium oxide (ZrO x ).

[0104] The anti-ultraviolet layer 303 is composed of one or more materials selected from indium tin oxide (ITO), aluminum zinc oxide (AZO), boron zinc oxide (BZO), tin zinc oxide (ZnSnO x ), gallium zinc oxide (GZO), indium gallium zinc oxide (IGZO), fluorine-doped tin oxide (FTO).

[0105] The Raman scattering energy-saving layer 304 is composed of one or more materials selected from one or more of tungsten oxide (WO x ), tungsten nickel oxide (WNiO x ), vanadium oxide (VxOx), titanium oxide (TiOx), graphene, aluminum oxide (AlOx).

[0106] The first dielectric layer 351, the third dielectric layer 381, and the fifth dielectric layer 391 are composed of one or more materials selected from nickel chromium (NiCr), tungsten iridium (WIr), titanium aluminum (TiAl).

[0107] The first metal energy-saving layer 352, the second metal energy-saving layer 382, and the third metal energy-saving layer 392 are composed of one or more materials selected from silver (Ag), copper (Cu), aluminum (Al), and gold (Au).

[0108] The second dielectric layer 353, the fourth dielectric layer 383, and the sixth dielectric layer 393 are composed of one or more materials selected from zinc tin (ZnSn), indium tin (InSn), and zinc aluminum (ZnAl).

[0109] The first anti-oxidation antireflection layer 354, the second anti-oxidation antireflection layer 384, and the third anti-oxidation antireflection layer 394 are composed of one or more materials selected from zinc tin oxide (ZnSnOx), zinc tin oxide (ZnSnOx) + silicon oxide (SiOx), zinc tin oxide (ZnSnOx) + titanium oxide (TiOx), indium tin oxide (InSnOx) + silicon oxide (SiOx), indium tin oxide (InSnOx) + titanium oxide (TiOx), aluminum zinc oxide (AZO), and magnesium fluoride (MgFx).

[0110] The hardening layer 307 is composed of one or more materials selected from zirconium oxide (ZrOx) and aluminum oxide (AlOx).

[0111] The high-temperature-resistant, anti-ultraviolet, high-transmittance, energy-saving coated glass in Example 3 can be made by the following manufacturing process:

[0112] Step S301, providing a common glass substrate;

[0113] Step S302, first isolation layer 302 forming step: deposited on the glass substrate 201 by vacuum coating, evaporation coating and other methods, film thickness is 5 to 35 nm. The material is silicon aluminum nitride (SiAlN x ).

[0114] Step S303, anti-ultraviolet layer 303 forming step: deposited on the isolation layer by vacuum coating, evaporation coating and other methods, film thickness is 10 to 120 nm, resistance <100 ohm below, can effectively absorb more than 90% of ultraviolet rays. The material is indium tin oxide (ITO).

[0115] Step S304, Raman scattering energy-saving layer 304 forming step: deposited on the anti-ultraviolet layer 303 by vacuum coating, evaporation coating and other methods, film thickness is 50 to 250 nm. The material is tungsten oxide (WO x ). Can reduce the infrared direct reflectivity by more than 65%, form the effect of scattering infrared.

[0116] Step S351, first dielectric layer 351 forming step: deposited on the Raman scattering energy-saving layer 304 by vacuum coating, evaporation coating and other methods, film thickness is 10 to 50 nm. Can realize better oxidation resistance, high film quality, high adhesion. The material is nickel chromium (NiCr).

[0117] Step S352, first metal energy-saving layer 352 forming step: deposited on the first dielectric layer 351 by vacuum coating, evaporation coating and other methods, film thickness is 3 to 50 nm. The material is silver (Ag). The main function of this layer is to have a strong infrared energy-saving effect, and it can also achieve single layer / double layer / three layer energy-saving effect through several layers of stacking.

[0118] Step S353, second dielectric layer 353 forming step: deposited on the first metal energy-saving layer 352 by vacuum coating, evaporation coating and other methods, film thickness is 20 to 80 nm. The material is zinc tin (ZnSn).

[0119] Step S354, first oxidation-resistant anti-reflection layer 354 forming step: deposited on the second dielectric layer 353 by vacuum coating, evaporation coating and other methods, film thickness is 30 to 160 nm. The material is zinc tin oxide (ZnSnOx). Can realize the stability of 700 degrees atmospheric baking, improve the overall transmittance of the film layer to about 74.5% or more, so as to realize the high-temperature resistance, oxidation resistance and high transmittance of the thin film.

[0120] Step S381, the third dielectric layer 381 formation step: vacuum coating, evaporation coating and other methods such as deposition on the first anti-oxidation and anti-reflection layer 354, film thickness is 10 to 50 nm. Can achieve better anti-oxidation, high film quality, high adhesion function. Material for nickel chromium (NiCr).

[0121] Step S382, the second metal energy-saving layer 382 formation step: vacuum coating, evaporation coating and other methods such as deposition on the third dielectric layer 381, film thickness is 3 to 50 nm. Material for silver (Ag), copper (Cu), aluminum (Al), gold (Au) one or more. The main function of this layer is to have a strong infrared energy-saving effect.

[0122] Step S383, the fourth dielectric layer 383 formation step: vacuum coating, evaporation coating and other methods such as deposition on the second metal energy-saving layer 382, film thickness is 20 to 80 nm. Material for zinc tin (ZnSn).

[0123] Step S384, the second anti-oxidation and anti-reflection layer 384 formation step: vacuum coating, evaporation coating and other methods such as deposition on the fourth dielectric layer 383, film thickness is 30 to 160 nm. Material for zinc tin oxide (ZnSnOx). Can be achieved in 700 degrees atmospheric baking stability, improve the overall transmittance of the film layer to 74.5% or more, so as to realize the high temperature resistance and anti-oxidation performance and high transmittance of the film.

[0124] Step S391, the fifth dielectric layer 391 formation step: vacuum coating, evaporation coating and other methods such as deposition on the second anti-oxidation and anti-reflection layer 384, film thickness is 10 to 50 nm. Can achieve better anti-oxidation, high film quality, high adhesion function. Material for nickel chromium (NiCr).

[0125] Step S392, the third metal energy-saving layer 392 formation step: vacuum coating, evaporation coating and other methods such as deposition on the fifth dielectric layer 391, film thickness is 3 to 50 nm. Material for silver (Ag). The main function of this layer is to have a strong infrared energy-saving effect.

[0126] Step S393, the sixth dielectric layer 393 formation step: vacuum coating, evaporation coating and other methods such as deposition on the third metal energy-saving layer 392, film thickness is 20 to 80 nm. Material for zinc tin (ZnSn).

[0127] Step S394, third anti-oxidation and anti-reflection layer 394 forming step: deposited on the sixth dielectric layer 393 by vacuum plating, evaporation plating and other methods, the film thickness is 30 to 160 nm. The material is zinc tin oxide (ZnSnOx). The stability of 700 degrees atmospheric baking can be realized, the overall transmittance of the film layer is improved to more than 74.5%, so as to realize the high temperature resistance, oxidation resistance and high transmittance of the film.

[0128] Step S306, second isolation layer 306 forming step: deposited on the third anti-oxidation and anti-reflection layer 394 by vacuum plating, evaporation plating and other methods, the film thickness is 35 to 180 nm. The material is silicon aluminum nitride (SiAlN x ). The water vapor barrier ability, high temperature stability and oxidation resistance of the film layer can be further improved.

[0129] Step S307, hard layer 307 forming step: deposited on the second isolation layer 306 by vacuum plating, evaporation plating and other methods, the film thickness is 35 to 200 nm. The material is zirconium oxide (ZrO x ). The surface hardness of the plated film surface can be as high as 8H or more, which can meet the wear resistance standard of conventional products, and also meet the wear resistance, acid and alkali resistance and boiling water experiment standard.

[0130] As described above, although only one kind of material is given for a certain layer in the manufacturing method, it should be understood that this kind of material can be replaced by the material explicitly indicated in the embodiment, the combination of materials, or its equivalent material or combination. The result is that for layers with the same function, such as the first dielectric layer 351, the third dielectric layer 381, and the fifth dielectric layer 391, the same material can be used, or different materials can be used. The thickness can be the same or different.

[0131] In contrast, if the thickness of the metal energy-saving layer of Embodiment 1 and Embodiment 2 is simply increased, such as the thickness of the silver layer, the transmittance of visible light will be greatly reduced. Therefore, the three repeated multilayer film settings of the metal energy-saving layer in Embodiment 3 can achieve further better energy-saving effect while further reducing the transmittance of visible light.

[0132] A specific implementation of Embodiment 3 is shown in Table 3 as follows:

[0133] Table 3

[0134]

[0135] Through experiments, the transmittance of the plated glass of Embodiment 3-1 and 3-2 in Table 3 is about 74.5%, the infrared radiation value is about 0.015, and the direct infrared blocking is about 85%.

[0136] As can be seen from the above embodiments, the above embodiments of the present application adopt innovative processes, and each layer has its independent or combined role, for example, by introducing an ultraviolet-resistant film in the structure to absorb more than 90% of ultraviolet rays; the scattering and energy-saving properties of the Raman scattering energy-saving layer are introduced to reduce light pollution and improve the ability of partial infrared regulation, for example, more than 65% of direct infrared reflection can be directly reduced. The energy-saving function of the metal energy-saving layer and the high-temperature-resistant and high-transmittance functional layer including the first electrolyte layer, the second electrolyte layer and the oxidation-resistant and anti-reflection layer are fused to form a temperature-resistant energy-saving unit, a single temperature-resistant energy-saving unit can reduce direct infrared reflection by more than 85%, and the value of infrared emissivity E is less than 0.08; two temperature-resistant energy-saving units can reduce direct infrared reflection by more than 80%, and the value of infrared emissivity E is less than 0.04; three temperature-resistant energy-saving units can reduce direct infrared reflection by more than 74.5%, and the value of infrared emissivity E is less than 0.02; four temperature-resistant energy-saving units can reduce direct infrared reflection by more than 70%, and the value of infrared emissivity E is less than 0.01. In addition, the high-temperature-resistant layer and the hardening layer make the high-temperature-resistant performance of the thin film reach more than 700 degrees Celsius and greatly improve the wear-resistant and other use performances.

[0137]

[0138] In the present application, some terms can use abbreviations, for example, "plating" can refer to a vacuum plating process or an evaporation plating process unless otherwise defined.

[0139] It should be noted that the devices and methods discussed above are intended only as examples. It must be emphasized that various embodiments can appropriately omit, replace, or add various procedures or components. Furthermore, features described with respect to certain embodiments can be combined in various other embodiments. Different aspects and elements of the embodiments can be combined in a similar manner. Furthermore, it should be emphasized that technology is constantly progressing, and therefore many elements are examples and should not be interpreted as limiting the scope of the present application.

[0140] In the description, specific details are given to provide a thorough understanding of the embodiments. However, one of ordinary skill in the art will understand that the embodiments can be practiced without these specific details. For example, in order not to obscure the embodiments, well-known structures and technologies have been shown without unnecessary details. The description provides only exemplary embodiments and is not intended to limit the scope, applicability or configuration of the present application. On the contrary, the foregoing description of the embodiments will provide an enabling description for a person skilled in the art to implement the embodiments of the present application. Various changes can be made to the function and configuration of the elements without departing from the spirit and scope of the present application.

[0141] Furthermore, as used in the specification and the appended claims, the terms "comprise", "comprising", "include", "including", "contain", "containing" or variations thereof do not exclude the presence of other features, integers, steps, actions, or groups but rather mean "comprising", "including", "containing" or "having" those features, integers, steps, actions, or groups.

[0142] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. As used herein, the article "a" is intended to refer to one or more than one (i.e., at least one) of the grammatical object of the article. By way of example, "an element" means one element or more than one element. "About" and / or "approximately," as used herein when referring to a measurable value such as an amount, a duration, and the like, encompasses variations that can exist in the values that can occur due to experimental error, measurement techniques, as well as the nature of the quantities being measured with deviations of ±20% or ±10%, ±5%, or +0.1% from the specified values in suitable circumstances, as such variations are within the context and the scope of the systems, apparatuses, circuits, methods, and other implementations described herein. "Substantially," as used herein when referring to a measurable value such as an amount, a duration, a physical property (such as frequency), and the like, also encompasses variations of ±20% or ±10%, ±5%, or +0.1% from the specified value, as such variations are within the context and the scope of the systems, apparatuses, circuits, methods, and other implementations described herein.

[0143] Where a range of values is provided, it is understood that each intervening value, to the minimum resolvable value, between the upper and lower limit values of that range is also contemplated. Any narrower range, or any other range, within the specified range is also contemplated. The upper and lower limits of these narrower ranges and other ranges can independently be included in or excluded from the range, and each narrower range is also encompassed within the technology, subject to any specifically excluded limit or value. Where the stated range includes one or both of the limits, ranges excluding either or both of the limits are also included.

[0144] As used herein, including in the claims, the use of "and", "or", "and / or", "at least one of, "one or more of", and "and / or", "comprising at least one of", "comprising one or more of", and "at least one of the following... and / or one or more of the following" means "one, two, three, four, five, six, seven, eight, nine, or all ten of the recited items are present", unless otherwise restricted by the context. For example, if the use of "and / or" is used in the context of a list, such as "A and / or B", then "A" and "B" are present, but not necessarily at the same time.

Claims

1. A high-temperature-resistant, ultraviolet-resistant, high-transmittance, energy-saving coated glass, characterized in that: The energy-saving coated glass comprises a glass substrate, a first isolation layer, an anti-ultraviolet layer, a Raman scattering energy-saving layer, and a first temperature-resistant energy-saving unit arranged on the glass substrate in sequence, wherein the first temperature-resistant energy-saving unit comprises a first dielectric layer, a first metal energy-saving layer, a second dielectric layer, and a first anti-oxidation and anti-reflection layer arranged in sequence; and the infrared emissivity of the high-temperature-resistant, anti-ultraviolet and high-transmittance energy-saving coated glass is less than 0.

08. ​ The glass substrate is ordinary glass, colored glass or ultra-white glass, and the thickness is 3-10 mm. The material of the first isolation layer is selected from one or more of silicon aluminum nitride SiAlNx, silicon boron nitride SiBNx, titanium nitride TiNx, boron nitride BNx, aluminum nitride AlNx, and zirconium oxide ZrOx, and the layer thickness is 5-35 nm. The material of the anti-ultraviolet layer is selected from one or more of indium tin oxide ITO, aluminum zinc oxide AZO, boron zinc oxide BZO, zinc tin oxide ZnSnOx, gallium zinc oxide GZO, indium gallium zinc oxide IGZO, and fluorine-doped tin oxide FTO, and the layer thickness is 10-120 nm, and the resistance is below 100 ohm. The material of the Raman scattering energy-saving layer is selected from one or more of tungsten oxide WOx, tungsten nickel oxide WNiOx, vanadium oxide VOx, titanium oxide TiOx, graphene, and aluminum oxide AlOx, and the layer thickness is 50-250 nm. The material of the first dielectric layer is selected from one or more of nickel chromium NiCr, tungsten iridium WIr, and titanium aluminum TiAl, and the layer thickness is 10-50 nm. The material of the first metal energy-saving layer is selected from one or more of silver Ag, copper Cu, aluminum Al, and gold Au, and the layer thickness is 3-50 nm. The material of the second dielectric layer is selected from one or more of zinc tin ZnSn, indium tin InSn, and zinc aluminum ZnAl, and the layer thickness is 20-80 nm. The material of the first anti-oxidation and anti-reflection layer is selected from one or more of zinc tin oxide ZnSnOx, zinc tin oxide ZnSnOx+silicon oxide SiOx, zinc tin oxide ZnSnOx+ titanium oxide TiOx, indium tin oxide InSnOx+ silicon oxide SiOx, indium tin oxide InSnOx+ titanium oxide TiOx, aluminum zinc oxide AZO, and magnesium fluoride MgFx, and the layer thickness is 30-160 nm. 2.The high-temperature-resistant, ultraviolet-resistant, high-transmittance, energy-saving coated glass according to claim 1, characterized in that: The energy-saving coated glass further comprises a second temperature-resistant energy-saving unit arranged on the first temperature-resistant energy-saving unit, wherein the second temperature-resistant energy-saving unit comprises a third dielectric layer, a second metal energy-saving layer, a fourth dielectric layer, and a second anti-oxidation and anti-reflection layer arranged in sequence; and the infrared emissivity of the high-temperature-resistant, anti-ultraviolet and high-transmittance energy-saving coated glass is less than 0.

04. The material of the third dielectric layer is selected from one or more of nickel chromium NiCr, tungsten iridium WIr, and titanium aluminum TiAl, and the layer thickness is 10-50 nm. The material of the second metal energy-saving layer is selected from one or more of silver Ag, copper Cu, aluminum Al, and gold Au, and the layer thickness is 3-50 nm. The material of the third dielectric layer is selected from one or more of zinc tin ZnSn, indium tin InSn, and zinc aluminum ZnAl, and the layer thickness is 20-80 nm. The material of the second anti-oxidation and anti-reflection layer is selected from one or more of zinc tin oxide ZnSnOx, zinc tin oxide ZnSnOx+silicon oxide SiOx, zinc tin oxide ZnSnOx+ titanium oxide TiOx, indium tin oxide InSnOx+ silicon oxide SiOx, indium tin oxide InSnOx+ titanium oxide TiOx, zinc aluminum oxide AZO, and magnesium fluoride MgFx, and the layer thickness is 30-160 nm. 3.The high-temperature-resistant, ultraviolet-resistant, high-transmittance, energy-saving coated glass according to claim 2, characterized in that: The third temperature-resistant and energy-saving unit is further arranged on the second temperature-resistant and energy-saving unit, and the third temperature-resistant and energy-saving unit comprises a fifth dielectric layer, a third metal energy-saving layer, a sixth dielectric layer, and a third anti-oxidation and anti-reflection layer arranged in sequence. The material of the fifth dielectric layer is selected from one or more of nickel-chromium NiCr, tungsten-iridium WIr, and titanium-aluminum TiAl, and the layer thickness is 10-50 nm. The material of the third metal energy-saving layer is selected from one or more of silver Ag, copper Cu, aluminum Al, and gold Au, and the layer thickness is 3-50 nm. The material of the sixth dielectric layer is selected from one or more of zinc tin ZnSn, indium tin InSn, and zinc aluminum ZnAl, and the layer thickness is 20-80 nm. The material of the third anti-oxidation and anti-reflection layer is selected from one or more of zinc tin oxide ZnSnOx, zinc tin oxide ZnSnOx+silicon oxide SiOx, zinc tin oxide ZnSnOx+ titanium oxide TiOx, indium tin oxide InSnOx+ silicon oxide SiOx, indium tin oxide InSnOx+ titanium oxide TiOx, zinc aluminum oxide AZO, and magnesium fluoride MgFx, and the layer thickness is 30-160 nm. 4.The high-temperature-resistant, ultraviolet-resistant, high-transmittance, energy-saving coated glass according to any one of claims 1 to 3, characterized in that: The first temperature-resistant and energy-saving unit, the second temperature-resistant and energy-saving unit, or the third temperature-resistant and energy-saving unit further comprises a second isolation layer, and the material of the second isolation layer is selected from one or more of silicon aluminum nitride SiAlNx, silicon boron nitride SiBNx, titanium nitride TiNx, boron nitride BNx, aluminum nitride AlNx, and zirconium oxide ZrOx, and the layer thickness is 5-35 nm. 5.The high-temperature-resistant, ultraviolet-resistant, high-transmittance, energy-saving coated glass according to claim 4, characterized in that: The second isolation layer further comprises a hardening layer, and the material of the hardening layer is selected from one or more of zirconium oxide ZrOx and aluminum oxide AlOx, and the layer thickness is 35-200 nm.

6. The method for manufacturing the high-temperature-resistant and ultraviolet-resistant high-transmittance energy-saving coated glass according to any one of the preceding claims, characterized in that The method comprises the following steps: S101, providing a glass substrate; S102, the first isolation layer forming step comprises depositing silicon aluminum nitride SiAlNx on the glass substrate by vacuum coating or evaporation coating, and the layer thickness is 5-35 nm; S103, the anti-ultraviolet layer forming step comprises depositing indium tin oxide ITO on the isolation layer by vacuum coating or evaporation coating, and the layer thickness is 10-120 nm, and the resistance is less than 100 ohm, so as to effectively absorb more than 90% of ultraviolet rays; S104, the Raman scattering energy-saving layer forming step comprises depositing tungsten oxide WOx on the anti-ultraviolet layer by vacuum coating or evaporation coating, and the layer thickness is 50-250 nm; so as to reduce the direct infrared reflectivity by more than 65%, and form the effect of scattering infrared rays; S105, the first temperature-resistant and energy-saving unit forming step comprises: Step S151, the first dielectric layer forming step includes depositing nickel-chromium NiCr on the Raman scattering energy-saving layer by vacuum plating, evaporation plating, with a layer thickness of 10-50 nm; to achieve the functions of oxidation resistance, high film quality, and high adhesion; Step S152, the first metal energy-saving layer forming step includes depositing silver Ag on the first dielectric layer by vacuum plating, evaporation plating, with a layer thickness of 3-50 nm; to enhance the infrared energy-saving effect; Step S153, the second dielectric layer forming step includes depositing zinc-tin ZnSn on the first metal energy-saving layer by vacuum plating, evaporation plating, with a layer thickness of 20-80 nm; Step S154, the first anti-oxidation and anti-reflection layer forming step includes depositing zinc-tin oxide ZnSnOx on the second dielectric layer by vacuum plating, evaporation plating, with a layer thickness of 30-160 nm, and the overall transmittance of the film layer reaches 78-82%.

7. The method for manufacturing high-temperature-resistant, ultraviolet-resistant, high-transmittance, and energy-saving coated glass according to claim 6, characterized in that: It also includes the step S208 of forming a second temperature-resistant energy-saving unit on the first temperature-resistant energy-saving unit, which includes: Step S281, the third dielectric layer forming step includes depositing nickel-chromium NiCr on the first anti-oxidation and anti-reflection layer by vacuum plating, evaporation plating, with a layer thickness of 10-50 nm; Step S282, the second metal energy-saving layer forming step includes depositing silver Ag on the third dielectric layer by vacuum plating, evaporation plating, with a layer thickness of 3-50 nm; Step S283, the fourth dielectric layer forming step includes depositing zinc-tin ZnSn on the second metal energy-saving layer by vacuum plating, evaporation plating, with a layer thickness of 20-80 nm; Step S284, the second anti-oxidation and anti-reflection layer forming step includes depositing zinc-tin oxide ZnSnOx on the fourth dielectric layer by vacuum plating, evaporation plating, with a layer thickness of 30-160 nm; the overall transmittance of the film layer reaches 76.5-78%. 8.The method of claim 7, wherein the method further comprises: coating the glass substrate with a layer of silicon dioxide; and coating the layer of silicon dioxide with a layer of titanium dioxide. It also includes the step S309 of forming a third temperature-resistant energy-saving unit on the second temperature-resistant energy-saving unit, which includes: Step S391, the fifth dielectric layer forming step includes depositing nickel-chromium NiCr on the second anti-oxidation and anti-reflection layer by vacuum plating, evaporation plating, with a layer thickness of 10-50 nm; Step S392, the third metal energy-saving layer forming step includes depositing Ag on the third dielectric layer by vacuum plating, evaporation plating, with a layer thickness of 3-50 nm; Step S393, the sixth dielectric layer forming step includes depositing zinc-tin ZnSn on the third metal energy-saving layer by vacuum plating, evaporation plating, with a layer thickness of 20-80 nm; Step S394, the third anti-oxidation and anti-reflection layer forming step includes depositing zinc-tin oxide ZnSnOx on the sixth dielectric layer by vacuum plating, evaporation plating, with a layer thickness of 30-160 nm, and the overall transmittance of the film layer reaches 74.5-76.5%.

Images