A method for extracting parameters of a GaNHEMT-based high and low temperature noise model

Abstract

The application discloses a GaN HEMT physical-based high and low temperature noise model parameter extraction method, a GaN HEMT high and low temperature model based on a region division model, and establishes a physical-based noise model considering high and low temperature effects. The model is combined by high and low temperature pinch-off voltage model parameters, mobility model parameters, high and low temperature current model parameters, and high and low temperature model parameters of other key parameters, and a special high and low temperature noise characteristic calculation method is adopted. Compared with the existing noise modeling and parameter extraction technology, the noise model does not have fitting parameters, greatly simplifies the noise parameter extraction process, and can be applied to different environmental temperatures, and has high precision, so that more accurate and flexible guidance can be provided for low-noise amplifier circuit design in a complex working environment and device optimization.

Description

Technical Field

[0001] This invention relates to the field of microelectronic integrated circuit technology, and in particular to a method for extracting high and low temperature noise model parameters of GaN HEMT (gallium nitride high electron mobility transistor) physical basis. Background Technology

[0002] Low-noise amplifiers (LNAs) are a crucial component of the receiver system's front-end, and their performance significantly impacts the overall system performance. Transistors are the core of LNAs; therefore, accurate modeling of their noise characteristics is critical to their design. To achieve precise LNA design while meeting design requirements under varying ambient temperatures, research is urgently needed on transistor noise modeling techniques that accurately characterize noise at high and low temperatures, along with efficient parameter extraction techniques.

[0003] Transistor noise models can be divided into empirical-based models and physical-based models. Empirical-based models are usually established by introducing noise fitting parameters on the basis of small-signal models. Physical-based noise models are usually established based on nonlinear models, and the expressions of gate and drain noise power spectral densities in the model are derived from the carrier transport equation. Therefore, compared with empirical-based noise models, they have the advantage of fewer fitting parameters, which greatly reduces the complexity of noise model parameter extraction and is of great significance for high and low temperature noise modeling of transistors. There are three main physical-based noise models: Van der Ziel model, Brookes model and surface potential model. Van der Ziel model is a physical-based noise model proposed by A. van der Ziel of the University of South Florida in 1983 for silicon-based MOSFET devices (Van Der Ziel A. Gatenoise in field effect transistors at moderately high frequencies, Proceedings of the IEEE, 1963, 51(3): 461-467.). This model is based on a long-channel drain current model and is derived using a simplified channel potential. However, this method is mainly for silicon-based MOSFET devices and is difficult to apply to noise modeling of HEMT devices. The Brookes model is a physical-based noise model for HEMT devices proposed by Tom M. Brookes of the National Radio Astronomy Observatory in 1986 (Brookes T M. The noise properties of high electron mobility transistors, IEEE Transactions on Electron Devices, 1986, 33(1): 52-57.). This model uses a transistor partitioning method to solve for the noise power spectrum. However, some fitting parameters still exist in its gate and drain noise and their correlation coefficients, which need to be extracted by combining more measured transistor noise data.The development of the surface potential noise model mainly combines surface potential model theory and Klaassen–Prins noise theory, forming a modeling theory that includes channel thermal noise of HEMT devices (Dasgupta A, Khandelwal S, Chauhan Y S. Surface potential based modeling of thermal noise for HEMT circuit simulation, IEEE Microwave and Wireless Components Letters, 2015, 25(6):376-378.), gate induced noise, and gate-drain noise correlation coefficient (Dasgupta A, Chauhan Y S. Modeling of induced gate thermal noise in HEMTs, IEEE Microwave and Wireless Components Letters, 2016, 26(6):428-430.). However, because this model ignores the influence of the space charge region, its noise power spectral density model still needs to introduce many fitting parameters to ensure model accuracy, which brings great challenges to the parameter extraction of high and low temperature noise models.

[0004] The above model can be applied to RF integrated circuit design, but due to the large number of fitting parameters, further consideration of the influence of ambient temperature will greatly increase the complexity of model parameter extraction. In response, in 2023, S. Mao and Y. Xu et al. from the University of Electronic Science and Technology of China developed a transistor physical basis noise power spectral density model without fitting parameters based on transistor region division theory (S. Mao, R. Xu, B. Yan and Y. Xu. An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN / GaN HEMTs, IEEE Transactions on Electron Devices, 2023, 70(4): 1835-1842.), which solved the problem of excessive fitting parameters in traditional noise models, and the model has the ability to characterize high and low temperature noise characteristics. However, how to achieve efficient high and low temperature noise model parameter extraction based on this model still needs further research.

[0005] Currently, there is a lack of a physical-based noise model parameter extraction method that can accurately characterize noise properties at high and low temperatures, enabling high-efficiency transistor noise modeling that takes into account ambient temperature effects. Therefore, developing a fast and accurate physical-based high and low temperature noise model parameter extraction method is of great significance for improving the simulation accuracy and design efficiency of RF circuits such as low-noise amplifiers, simplifying the design process, and meeting the needs of more complex application scenarios. Summary of the Invention

[0006] The purpose of this invention is to provide a method for extracting high and low temperature noise model parameters of GaN HEMT physical basis. It is a method for extracting high and low temperature model parameters based on transistor region partitioning physical basis noise model parameter extraction method, which solves at least the problems of excessive fitting parameters and lack of efficient high and low temperature model parameter extraction methods in the existing technology.

[0007] This invention provides a method for extracting parameters of a GaN HEMT physical-based high and low temperature noise model, characterized by comprising the following steps:

[0008] S1. High and low temperature voltage-current characteristic curves and multi-bias S-parameter tests; for GaN HEMT devices from which parameters need to be extracted, static DC IV tests and S-parameter tests were performed at different ambient temperatures to obtain the gate-source bias voltage V at different ambient temperatures. gs and drain-source bias voltage V ds The drain-source current I under ds Characteristic curves, and different gate-source bias voltages V gs and drain-source bias voltage V ds The S-parameters are as follows;

[0009] S2, Extraction of high and low temperature pinch-off voltage model parameters; from high and low temperature V off The high and low temperature voltage-current characteristic curves obtained from the model test were used to plot the curves of drain current versus gate voltage under different drain voltages, with a drain current of 10... -6 The gate voltage corresponding to A is used as the pinch-off voltage, and V is extracted at each ambient temperature. off ;

[0010] S3. Extraction of mobility model parameters; the mobility is inversely proportional to the ambient temperature.

[0011] S4. Parameter extraction for high and low temperature current models; using the temperature correlation of the pinch-off voltage and mobility models from steps 2 and 3, the equivalent critical electric field E is calculated. ceff Based on the correlation with ambient temperature, a high and low temperature current model was established.

[0012] S5. Extraction of environmental temperature model parameters for specific parameters; the specific parameter is R. dR s C gs and C gd ;

[0013] S6. Calculation of high and low temperature noise characteristics; including the intrinsic drain-channel noise power spectral density of the transistor. Id Gate-induced noise power spectral density S Ig Calculation of the correlation coefficient C between gate-induced noise and drain-channel noise;

[0014] S7. Model Validation.

[0015] Furthermore, in the static DC IV test, the gate-source bias voltage range is V. gs = -3.2~0V, drain-source bias voltage range is V ds =0~30V;

[0016] The bias test was performed using the same DC IV bias method. The S-parameter frequency range at each bias point was 8-30 GHz.

[0017] Further, in step 201, establish high and low temperature V off Model; the high and low temperature V off The model uses the height of the Schottky barrier. Conduction band discontinuity ΔE in AlGaN and GaN materials c The temperature correlation, based on preset conditions, is used to characterize V. off Environmental temperature effect;

[0018] High and low temperature V off Model expression:

[0019]

[0020] In the formula, N d d represents the doping concentration of the AlGaN layer. d d represents the thickness of the undoped barrier layer. i σ is the thickness of the doped barrier layer, σ is the polarization surface charge density, and ε is the polarization surface charge density. AlGaN T is the relative permittivity of AlGaN material. amb The ambient temperature.

[0021] Further, in step 202, establish... and ΔE c An ambient temperature model is established by combining the Schottky barrier height at room temperature, the ambient temperature modulation coefficient, the ambient temperature model of the AlGaN bandgap, and the bandgap of AlGaN at room temperature.

[0022] and ΔE c The equations for the ambient temperature model are as follows:

[0023]

[0024]

[0025] In the formula, The corresponding Schottky barrier height at room temperature, α corresponds to the ambient temperature-dependent modulation coefficient, E g-AlGaN (T amb ) and E g-AlGaN (T0) corresponds to the environmental temperature-dependent model of AlGaN bandgap and the bandgap of AlGaN at room temperature, respectively.

[0026] Furthermore, the mobility is inversely proportional to the ambient temperature, using T -γ Its temperature correlation is described in functional form, and the expression is as follows:

[0027]

[0028] In the formula, μ(T0) is the mobility at room temperature, and γ is the temperature-dependent modulation coefficient of the mobility.

[0029] Further, in step 401, a region partitioning current model is established, which is obtained from the transistor's external drain-source voltage, channel modulation coefficient, electric field-electron velocity relationship order, transistor source and drain access region length, transistor gate length, equivalent critical electric field model of transistor self-heating effect, and maximum saturation current model.

[0030] The master equation of the region partitioning current model is:

[0031]

[0032] In the formula, V ds The external drain-source voltage is λ, the channel modulation coefficient is β, and the order of the electric field-electron velocity relationship is l. s and l d These are the lengths of the source and drain access regions of the transistor, l g E is the gate length of the transistor. ceff An equivalent critical electric field model considering the self-heating effect of transistors; I max For the maximum saturation current model, satisfying I max =Wqn s (V gs )v max Where W is the total gate width of the transistor, q is the electron charge, and n s (V gs ) is an electron concentration model related to the gate-source voltage, v max This represents the maximum electron saturation velocity.

[0033] Further, in step 402, high and low temperature modeling of the current model is performed, which is achieved through the pinch-off voltage in step 2, the temperature correlation of the mobility model in step 3, and the equivalent critical electric field E. ceff The correlation between ambient temperature and temperature is established, and its expression is as follows:

[0034] E ceff (T amb ) = E ceff (T0)[1+E t1 (T amb -T0) 2 +E t2 (T amb -T0)] (11)

[0035] In the above formula, E ceff (T0) represents the equivalent critical electric field E at room temperature. ceff E t1 and E t2 All of these are temperature correlation coefficients, which can be extracted by fitting the voltage-current characteristic curves at different ambient temperatures obtained in step 1 using the least squares method.

[0036] Furthermore, the environmental temperature model expression for the specific parameter mentioned in step 5 is as follows:

[0037] P(T amb )=P(T0)[1+B(T amb -T0)] (12)

[0038] In the formula, P(T) amb P(T0) is the ambient temperature model with specific parameters, P(T0) is the extraction result of the corresponding parameters at room temperature, and B is the ambient temperature correlation coefficient of the specific parameters.

[0039] Further, in step 601, the intrinsic drain-channel noise power spectral density S of the transistor... Id The calculation is performed using the following expression:

[0040]

[0041] In the formula, k is the Boltzmann constant, and T ch The channel temperature of the transistor during operation is expressed as T. ch =T0+V ds I ds R th V ds R is the drain-source voltage. th Where W is the thermal resistance, C is the total gate width, and W is the total gate width. gLet I be the gate capacitance per unit area, μ be the electron mobility, and the high and low temperature mobility model from step 3 be used. ds For the drain-source current of the transistor, the high and low temperature current model from step 4 is used. g This is the gate length of the transistor. A id The expression is as follows:

[0042]

[0043] In the formula, V go =V gs -V off V off The pinch-off voltage of the transistor is determined using the high and low temperature pinch-off voltage model from step 2, V. si E represents the boundary potential of the source access region. f For the Fermi level, V L This represents the boundary potential near the drain of the gate.

[0044] Further, in step 602, the transistor gate-induced noise power spectral density S Ig The calculation is performed using the following expression:

[0045]

[0046] In the formula, ω is the angular frequency, ω=2πf, f is the operating frequency of the transistor, and A ig B ig C ig The expressions are as follows:

[0047]

[0048]

[0049]

[0050] This invention proposes a method for extracting parameters for high and low temperature models based on a transistor region partitioning physical base noise model. This method can accurately predict high and low temperature noise characteristics based on the nonlinear model of high and low temperature transistors, avoiding the process of repeatedly extracting noise model parameters at various ambient temperatures, and effectively improving the modeling efficiency of high and low temperature noise models. Attached Figure Description

[0051] Figure 1 This is a flowchart of an embodiment of the present invention;

[0052] Figure 2 Verification of high and low temperature current characteristics of 4×125μm AlGaN / GaN HEMT;

[0053] Figure 3 Verification of high and low temperature S-parameters for 4×125μm AlGaN / GaN HEMT;

[0054] Figure 4 Comparison of experimental and simulation results of high and low temperature noise model of 4×125μm AlGaN / GaN HEMT, (a) bias A(V gs = -1.6V, V ds (a) High and low temperature verification results of 10V; (b) Bias B (V) gs = -2V, V ds High and low temperature verification results (=10V). Detailed Implementation

[0055] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0056] It should be noted that the terms "first," "second," etc., in the specification, claims, and drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0057] Example: A method for extracting parameters of a high and low temperature noise model on a GaN HEMT physical basis. The specific steps are as follows:

[0058] Step 1: High and low temperature voltage-current characteristic curves and multi-bias S-parameter testing

[0059] For GaN HEMT devices requiring parameter extraction, static DC IV and S-parameter tests were conducted under different ambient temperatures to obtain the gate-source bias voltage V at each ambient temperature. gs and drain-source bias voltage V ds The drain-source current I under ds Characteristic curves refer to the voltage-current characteristic curves of a transistor, as well as the gate-source bias voltages V at different conditions. gs and drain-source bias voltage V ds The S-parameters are as follows.

[0060] During static DC IV testing, the gate-source bias voltage range is V. gs = -3.2~0V, drain-source bias voltage range is V ds =0~30V); When the bias is the same as the DC IV test, the S-parameter frequency range at each bias point is 8-30GHz.

[0061] Step 2: Extraction of parameters for high and low temperature pinch-off voltage model

[0062] In step 201, a high and low temperature V is established. off The model, which uses the height of the Schottky barrier, Conduction band discontinuity ΔE in AlGaN and GaN materials c The temperature correlation, based on preset conditions, is used to characterize V. off The effect of ambient temperature.

[0063] Specifically, high and low temperature V off Model expression:

[0064]

[0065] In the formula, N d d represents the doping concentration of the AlGaN layer. d d represents the thickness of the undoped barrier layer. i σ is the thickness of the doped barrier layer, σ is the polarization surface charge density, and ε is the polarization surface charge density. AlGaN T is the relative permittivity of AlGaN material. amb The ambient temperature.

[0066] Step 202, establish and ΔE c An ambient temperature model is established by combining the Schottky barrier height at room temperature, the ambient temperature-related modulation coefficient, the ambient temperature-related model of the AlGaN bandgap, and the bandgap of AlGaN at room temperature.

[0067] and ΔE c The equations for the ambient temperature model are as follows:

[0068]

[0069] ΔE c (T amb ) = 0.7[E g-AlGaN (T amb )-E g-GaN (T amb (3)

[0070] In the formula, The corresponding Schottky barrier height at room temperature, α corresponds to the ambient temperature-dependent modulation coefficient, E g-AlGaN (T amb ) and E g-AlGaN (T0) corresponds to the environmental temperature-dependent model of AlGaN bandgap and the bandgap of AlGaN at room temperature, respectively.

[0071] Where E g-AlGaN (T amb The expression for ) is:

[0072] E g-AlGaN (T amb )=mE g-AlN (T amb )+(1-m)E g-GaN (T amb )-m(1-m) (4)

[0073] In the formula, m is the aluminum content; E g-AlN (T amb ) and E g-GaN (T amb () is an environmental temperature-dependent model for AlN and GaN;

[0074] The E g-GaN (T amb The model is obtained from the bandgap of GaN at room temperature and the ambient temperature-dependent modulation coefficient of GaN, E g-GaN (T amb The model expression is:

[0075]

[0076] In the formula, E g-GaN (T0) is the bandgap of GaN at room temperature, α GaN and β GaN The ambient temperature-dependent modulation coefficient for GaN has a typical value of 9.09 × 10⁻⁶. -4 And 830.

[0077] The E g-AlN (T amb The model is obtained from the bandgap of AlN at room temperature and the ambient temperature-dependent modulation coefficient of AlN.

[0078] E g-GaN (T amb The model expression is:

[0079]

[0080] In the formula, E g-AlN (T0) is the band gap of AlN at room temperature, α AlN and β AlN The ambient temperature-dependent modulation coefficient for AlN has a typical value of 1.799 × 10⁻⁶. -3and 1462. (Huque MA, Elizaa SA, Rahmana T, et al. Temperature dependent analytical model for current–voltage characteristics of AlGaN / GaN power HEMT, Solid-State Electronics, 2009, 53(3): 341-348.).

[0081] In the above expressions, the model parameters under normal temperature conditions can be determined by combining the methods in the literature (S.Mao, R.Xu, B.Yan and Y.Xu. An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN / GaN HEMTs, IEEE Transactions on Electron Devices, 2023, 70(4): 1835-1842.).

[0082] Step 203: Obtain the pinch-off voltage V at various ambient temperatures. off The pinch-off voltage V at each ambient temperature in equation (1) off Based on the high and low temperature voltage-current characteristic curves obtained in step 1, plot the curves of drain current versus gate voltage under different drain voltages, with drain current 10 -6 The gate voltage corresponding to A is used as the pinch-off voltage, and the pinch-off voltage V at each ambient temperature is extracted. off .

[0083] For the environmental temperature correlation coefficient α in equation (2), it can be determined based on V under different environmental temperatures. off The extracted values ​​are obtained by curve fitting using the least squares method, combined with equation (1).

[0084] After this step is completed, the extracted α is substituted into equation (2), and combined with equations (1) and (3)-(6), the ambient temperature-related pinch-off voltage V can be obtained. off The model is used for subsequent high and low temperature current model calculations.

[0085] Step 3, Mobility Model Parameter Extraction

[0086] The mobility is inversely proportional to the ambient temperature, using T... -γ Its temperature correlation is described in functional form, and the expression is as follows:

[0087]

[0088] In the formula, μ(T0) is the mobility at room temperature, and γ is the temperature-dependent modulation coefficient of the mobility.

[0089] The mobility μ(T) at various ambient temperatures in equation (7) amb γ can be obtained by combining the high and low temperature measured voltage-current characteristic curves in step 1 with the method in the literature (Q.Wu et al. AScalable Multiharmonic Surface-Potential Model of AlGaN / GaN HEMTs, IEEE Transactions on Microwave Theory and Techniques, 2018, 66(3): 1192-1200.). γ can be obtained by curve fitting using the least squares method.

[0090] After this step is completed, the extracted γ is substituted into equation (7) to obtain the ambient temperature-related mobility μ(T). amb The model is used for subsequent calculation of noise power spectral density.

[0091] Step 4: Extraction of parameters for high and low temperature current models

[0092] Step 401: Establish the region partitioning current model, which is obtained by the transistor's applied drain-source voltage, channel modulation coefficient, electric field-electron velocity relationship order, transistor source and drain access region length, transistor gate length, equivalent critical electric field model of transistor self-heating effect, and maximum saturation current model.

[0093] The master equation of the current model used for region partitioning is:

[0094]

[0095] In the formula, V ds The external drain-source voltage is λ, the channel modulation coefficient is β, and the order of the electric field-electron velocity relationship is l. s and l d These are the lengths of the source and drain access regions of the transistor, l g E represents the gate length of the transistor. ceff The equivalent critical electric field model that takes into account the transistor's self-heating effect is expressed as equation (9). max For the maximum saturation current model, satisfying I max =Wqn s (V gs )v max Where W is the total gate width of the transistor, q is the electron charge, and n s (V gsThe electron concentration model related to the gate-source voltage is given by equation (10), v max This represents the maximum electron saturation velocity.

[0096] E ceff =(a0+a1V) gs (b0+b1T) ch +b2T ch 2 (9)

[0097] In the formula, a0, a1, b0, b1, and b2 are all extracted from measured data, and V gs For the applied gate-source voltage, T ch This represents the transistor channel temperature.

[0098] n s =A n tanh[α n (V gs -V off )+b n ]+B n (10)

[0099] In the formula, A n B n and α n and b n All data were extracted from actual measured data, V off The pinch-off voltage model for the transistor is obtained from step 2.

[0100] Equivalent critical electric field model E ceff and electron concentration model n s (V gs The model parameters in the paper were all extracted using the method described in the Chinese invention patent (“A method and system for extracting nonlinear current model parameters for microwave gallium nitride devices”, ZL201810096978.0).

[0101] Step 402, high and low temperature modeling of the current model, wherein the high and low temperature modeling of the current model is achieved through the pinch-off voltage in step 2, the temperature correlation of the mobility model in step 3, and the equivalent critical electric field E. ceff The correlation between ambient temperature and temperature is established, and its expression is as follows:

[0102] E ceff (T amb ) = E ceff (T0)[1+E t1 (T amb -T0) 2 +E t2 (T amb -T0)] (11)

[0103] In the above formula, E ceff (T0) represents the equivalent critical electric field E at room temperature. ceff E t1 and E t2 All of these are temperature correlation coefficients, which can be extracted by fitting the voltage-current characteristic curves at different ambient temperatures obtained in step 1 using the least squares method.

[0104] After this step is completed, substitute the extracted parameters into equations (9)-(11) respectively to obtain the ambient temperature-related current I. ds The model is used for subsequent calculations of the noise power spectral density. ds Comparison and verification of the measured simulation results of the model show that the established model can accurately predict the transistor current characteristics under different ambient temperatures, such as... Figure 2 As shown.

[0105] Step 5: R d R s C gs and C gd High and low temperature model extraction of parameters

[0106] In addition to the parameters involved in steps 2, 3, and 4, the transistor model also includes an ambient temperature model with other specific parameters, specifically R. d R s C gs and C gd It is obtained by extracting the corresponding parameters at room temperature and the correlation coefficient between the parameters and the ambient temperature of the specific parameters.

[0107] The environmental temperature model expression for specific parameters is:

[0108] P(T amb )=P(T0)[1+B(T amb -T0)] (12)

[0109] In the formula, P(T) amb P(T0) is the ambient temperature model with specific parameters, P(T0) is the extraction result of the corresponding parameters at room temperature, and B is the ambient temperature correlation coefficient of the specific parameters.

[0110] The extraction of model parameters under different ambient temperatures can be performed using the method described in Chinese invention patent (“Method for Extracting Small-Signal Model Parameters of Gallium Nitride High Electron Mobility Transistor”, ZL201510444419.0). Based on this, least squares curve fitting is used, and the ambient temperature correlation coefficient B is extracted by combining the model parameter values ​​at each temperature.

[0111] After this step is completed, the temperature correlation coefficients of each extracted parameter are substituted into equation (12) to obtain the R related to the ambient temperature. d R s C gs and C gd A parametric model is used for subsequent calculation of noise power spectral density. The temperature-dependent models of each parameter are substituted into the transistor model, and its S-parameter characteristics are simulated under different ambient temperatures. Comparison of experimental and simulation results verifies that the established model can accurately predict the S-parameter characteristics under different ambient temperatures, such as... Figure 3 This further validates R d R s C gs and C gd The accuracy of high and low temperature models.

[0112] Step 6: Calculation of high and low temperature noise characteristics

[0113] Step 601: For a field-effect transistor, different output characteristics can be obtained by adjusting the gate voltage. Essentially, this is achieved by changing the channel resistance of the device through altering the gate voltage. Therefore, the noise within the channel should be considered thermal noise. In this invention, the intrinsic drain-channel noise power spectral density S of the transistor... Id The calculation is performed using the following expression:

[0114]

[0115] In the formula, k is the Boltzmann constant, and T ch The channel temperature of the transistor during operation is expressed as T. ch =T0+V ds I ds R th V ds R is the drain-source voltage. th For thermal resistance, the method in Chinese invention patent (“A method and system for extracting thermal resistance”, ZL201810096948.X) is used for extraction, where W is the total grid width and C is the thermal resistance. g Let I be the gate capacitance per unit area, μ be the electron mobility, and the high and low temperature mobility model from step 3 be used. ds For the drain-source current of the transistor, the high and low temperature current model from step 4 is used. g A is the gate length of the transistor. id The expression is as follows:

[0116]

[0117] In the formula, V go =V gs -V off V offThe pinch-off voltage of the transistor is determined using the high and low temperature pinch-off voltage model from step 2, V. si E represents the boundary potential of the source access region. f For the Fermi level, V L The boundary potential near the drain of the gate is given by the following method (S.Mao, R.Xu, B.Yan and Y.Xu. An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN / GaN HEMTs, IEEE Transactions on Electron Devices, 2023, 70(4): 1835-1842).

[0118] Step 602: Due to the presence of the gate capacitance of the field-effect transistor, during transistor operation, the current and potential fluctuations caused by the Brownian motion of charge carriers in the channel will be coupled to the gate of the transistor through the gate capacitance, generating gate-induced noise. In this invention, the power spectral density S of the transistor gate-induced noise is... Ig The calculation is performed using the following expression:

[0119]

[0120] In the formula, ω is the angular frequency, ω=2πf, f is the operating frequency of the transistor, and A ig B ig C ig The expressions are as follows:

[0121]

[0122]

[0123]

[0124] Step 603, the correlation coefficient C between gate-induced noise and drain-channel noise is calculated using the following expression:

[0125]

[0126] After this step is completed, the intrinsic drain-channel noise power spectral density S of the transistor can be obtained. Id Transistor gate induced noise power spectral density S Ig The correlation coefficient C between gate-induced noise and drain-channel noise is used for noise simulation and model verification.

[0127] Step 7: Model Validation

[0128] To verify the accuracy of the model parameter extraction methods in the above steps, 4×125μm GaN devices using 0.25μm AlGaN / GaNHEMT technology were used. Measured data at ambient temperatures of -55℃, 25℃, 75℃, and 125℃ were used to verify the DC-IV and S-parameter characteristics of the model. The comparison between the measured and simulated results is shown below. Figure 2 , 3 As shown.

[0129] To verify the accuracy of the high and low temperature noise models, tests were conducted at V... gs = -1.6V, V ds =10V (bias A) and V gs = -2V, V ds At two static bias points of 10V (bias B), the simulation and experimental results were compared. Each bias group included results for four ambient temperatures: -55℃, 25℃, 75℃, and 125℃. Figure 4 As shown.

[0130] Figure 4 The results show that the established high and low temperature noise model can accurately simulate the transistor noise characteristics at different ambient temperatures in the two bias settings. To evaluate... Figure 4 The accuracy of the noise model at medium, high and low temperatures is based on Equation (20). The accuracy of the noise figure corresponding to each temperature point in the two sets of bias conditions is calculated in the range of 8-30 GHz. The results are shown in the table below.

[0131]

[0132] Table 1. Accuracy of the high and low temperature noise model established in this embodiment.

[0133]

[0134] As shown in the table above, the noise model established in this embodiment exhibits good accuracy under different bias conditions. Specifically, under bias A, the model's simulation accuracy for all four noise parameters is higher than 83.69%; under bias B, the model's simulation accuracy for all four noise parameters is higher than 86.04%. This verifies the accuracy and effectiveness of the high and low temperature noise model parameter extraction method of this embodiment.

[0135] This invention modifies the sub-models (such as V) of the original current model (i.e., the master equation of the domain partitioning current model). off ,μ(T amb E ceffThis paper establishes a physical noise model that considers the effects of high and low temperatures by modeling current at various temperatures. The model focuses on extracting parameters for high and low temperature pinch-off voltage, mobility, and current, as well as combining these parameters with specific high and low temperature noise characteristic calculation formulas. Compared to existing noise modeling and parameter extraction techniques, this noise model eliminates the need for fitting parameters, significantly simplifying the noise parameter extraction process. Furthermore, it is applicable to various ambient temperatures with high accuracy, providing more precise and flexible guidance for low-noise amplifier circuit design and device optimization in complex operating environments.

[0136] The implementation of this invention is based on programmed processing by a device with processor functionality. Therefore, in practical engineering, the technical solutions and functions of this invention can be encapsulated into various modules. Based on this reality, and building upon the above embodiments, this invention provides a GaN HEMT physical basis high and low temperature noise model parameter extraction device based on region partitioning. This device is used to perform the GaN HEMT physical basis high and low temperature noise model parameter extraction in the above method embodiments. The device includes: a first main module for high and low temperature voltage-current characteristic curve and multi-bias S-parameter testing; a second main module for high and low temperature pinch-off voltage model parameter extraction; a third main module for mobility model parameter extraction; a fourth main module for high and low temperature current model parameter extraction; and a fifth main module for high and low temperature model extraction of other key parameters, including R... d R s C gs and C gd The sixth module is used for high and low temperature noise characteristic calculations, etc.

[0137] The methods in the embodiments of the present invention are implemented using electronic devices; therefore, it is necessary to describe the relevant electronic devices. For this purpose, embodiments of the present invention provide an electronic device comprising: at least one processor, a communication interface, at least one memory, and a communication bus, wherein the at least one processor, the communication interface, and the at least one memory communicate with each other via the communication bus. The at least one processor can invoke logical instructions in the at least one memory to execute all or part of the steps of the methods provided in the foregoing method embodiments.

[0138] Furthermore, when the logical instructions in at least one of the aforementioned memories can be implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various method embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0139] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0140] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present invention. Based on this understanding, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order than those shown in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, or sometimes in reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0141] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that after reading this application specification, they can still modify or make equivalent substitutions to the specific implementation of the present invention, but these modifications or changes do not depart from the protection scope of the pending claims of the present invention.

Claims

1. A method for extracting parameters of a GaN HEMT physical-based high and low temperature noise model, characterized in that, Includes the following steps: S1. High and low temperature voltage-current characteristic curves and multi-bias S-parameter tests; for GaN HEMT devices from which parameters need to be extracted, static DC IV tests and S-parameter tests were performed at different ambient temperatures to obtain the gate-source bias voltage V at different ambient temperatures. gs and drain-source bias voltage V ds The drain-source current I under ds Characteristic curves, and different gate-source bias voltages V gs and drain-source bias voltage V ds The S-parameters are as follows; S2. Extraction of parameters for high and low temperature pinch-off voltage model; Step 201, establish high and low temperature V off The model, which uses the height of the Schottky barrier, φ B The conduction band discontinuity ΔE in AlGaN and GaN materials c The temperature correlation, based on preset conditions, is used to characterize V. off Environmental temperature effect; Specifically, high and low temperature V off Model expression: （1） In the formula, N d d represents the doping concentration of the AlGaN layer. d d represents the thickness of the undoped barrier layer. i σ is the thickness of the doped barrier layer, σ is the polarization surface charge density, and ε is the polarization surface charge density. AlGaN T is the relative permittivity of AlGaN material. amb The ambient temperature; Step 202, establish φ B and ΔE c An ambient temperature model is established by combining the Schottky barrier height at room temperature, the ambient temperature-related modulation coefficient, the ambient temperature-related model of AlGaN bandgap width, and the bandgap width of AlGaN at room temperature. φ B and ΔE c The equations for the ambient temperature model are as follows: （2） （3） In the formula, φ B (T0) corresponds to the Schottky barrier height at room temperature, α corresponds to the ambient temperature-dependent modulation coefficient, and E g-AlGaN (T amb ) and E g-AlGaN (T0) corresponds to the environmental temperature-dependent model of AlGaN bandgap and the bandgap of AlGaN at room temperature, respectively. Where E g-AlGaN (T amb The expression for ) is: （4） In the formula, m is the aluminum content; E g-AlN (T amb ) and E g-GaN (T amb () is an environmental temperature-dependent model for AlN and GaN; The E g-GaN (T amb The model is obtained from the bandgap of GaN at room temperature and the ambient temperature-dependent modulation coefficient of GaN. E g-GaN (T amb The model expression is: （5） In the formula, E g-GaN (T0) is the bandgap of GaN at room temperature, α GaN and β GaN The ambient temperature-dependent modulation coefficients for GaN are 9.09 × 10⁻⁶. -4 and 830; The E g-AlN (T amb The model is obtained from the bandgap of AlN at room temperature and the ambient temperature-dependent modulation coefficient of AlN. E g-GaN (T amb The model expression is: （6） In the formula, E g-AlN (T0) is the band gap of AlN at room temperature, α AlN and β AlN The ambient temperature-dependent modulation coefficient of AlN has a value of 1.799 × 10⁻⁶. -3 and 1462; Step 203: Based on the high and low temperature voltage-current characteristic curves obtained in Step 1, plot the curves of drain current versus gate voltage under different drain voltages, with drain current 10... -6 The gate voltage corresponding to A is used as the pinch-off voltage, and the pinch-off voltage V at each ambient temperature is extracted. off ; The environmental temperature correlation coefficient α in equation (2) is based on V under different environmental temperatures. off The extracted values ​​are obtained by combining equation (1) and using least squares curve fitting. S3. Extraction of mobility model parameters; the mobility is inversely proportional to the ambient temperature. S4. Parameter extraction for high and low temperature current models; using the temperature correlation of the pinch-off voltage and mobility models from steps 2 and 3, the equivalent critical electric field E is calculated. ceff Based on the correlation with ambient temperature, a high and low temperature current model was established. S5. Extraction of environmental temperature model parameters with specific parameters; the specific parameters are Rd, Rs, Cgs, and Cgd; S6. Calculation of high and low temperature noise characteristics; including the intrinsic drain-channel noise power spectral density of the transistor. Id Gate-induced noise power spectral density S Ig Calculation of the correlation coefficient C between gate-induced noise and drain-channel noise; S7. Model Validation.

2. The method for extracting parameters of a GaN HEMT physical-based high and low temperature noise model according to claim 1, characterized in that, The static DC IV test has a gate-source bias voltage range of V. gs = -3.2~0 V, drain-source bias voltage range is V ds = 0~30 V; The bias test was performed using the same DC IV bias method. The S-parameter frequency range at each bias point was 8-30 GHz.

3. The method for extracting parameters of a GaN HEMT physical-based high and low temperature noise model according to claim 1, characterized in that, The mobility is inversely proportional to the ambient temperature. Its temperature correlation is described in functional form, and the expression is as follows: （4） In the formula, μ(T0) is the mobility at room temperature, and γ is the temperature-dependent modulation coefficient of the mobility.

4. The method for extracting parameters of a GaN HEMT physical-based high and low temperature noise model according to claim 1, characterized in that, Step 401: Establish the region partitioning current model, which is obtained from the transistor's external drain-source voltage, channel modulation coefficient, electric field-electron velocity relationship order, transistor source and drain connection region length, transistor gate length, equivalent critical electric field model of transistor self-heating effect, and maximum saturation current model. The master equation of the region partitioning current model is: （5） In the formula, V ds The external drain-source voltage is λ, the channel modulation coefficient is β, and the order of the electric field-electron velocity relationship is l. s and l d These are the lengths of the source and drain access regions of the transistor, l g E is the gate length of the transistor. ceff An equivalent critical electric field model considering the self-heating effect of transistors; I max For the maximum saturation current model, satisfying I max =Wqn s (V gs )v max Where W is the total gate width of the transistor, q is the electron charge, and n s (V gs ) is an electron concentration model related to the gate-source voltage, v max This represents the maximum electron saturation velocity.

5. The method for extracting parameters of a GaN HEMT physical-based high and low temperature noise model according to claim 4, characterized in that, Step 402, high and low temperature modeling of the current model, wherein the high and low temperature modeling of the current model is achieved through the pinch-off voltage in step 2, the temperature correlation of the mobility model in step 3, and the equivalent critical electric field E. ceff The correlation between ambient temperature and temperature is established, and its expression is as follows: （11） In the above formula, E ceff (T0) represents the equivalent critical electric field E at room temperature. ceff E t1 and E t2 All are temperature correlation coefficients, which are extracted by fitting the voltage-current characteristic curves at different ambient temperatures obtained in step 1 using the least squares method.

6. The method for extracting parameters of a GaN HEMT physical-based high and low temperature noise model according to claim 1, characterized in that, The environmental temperature model expression for the specific parameters mentioned in step 5 is as follows: （12） In the formula, P(T) amb P(T0) is the ambient temperature model with specific parameters, P(T0) is the extraction result of the corresponding parameters at room temperature, and B is the ambient temperature correlation coefficient of the specific parameters.

7. The method for extracting parameters of a GaN HEMT physical-based high and low temperature noise model according to claim 1, characterized in that, Step 601, transistor intrinsic drain-channel noise power spectral density S Id The calculation is performed using the following expression: （13） In the formula, k is the Boltzmann constant, and T ch The channel temperature of the transistor during operation is expressed as T. ch =T0+V ds I ds R th V ds R is the drain-source voltage. th Where W is the thermal resistance, C is the total gate width, and W is the total gate width. g Let I be the gate capacitance per unit area, μ be the electron mobility, and the high and low temperature mobility model from step 3 be used. ds For the drain-source current of the transistor, the high and low temperature current model from step 4 is used. g A is the gate length of the transistor. id The expression is as follows: （14） In the formula, V go =V gs -V off V off The pinch-off voltage of the transistor is determined using the high and low temperature pinch-off voltage model from step 2, V. si E represents the boundary potential of the source access region. f For the Fermi level, V L This represents the boundary potential near the drain of the gate.

8. The method for extracting parameters of a GaN HEMT physical-based high and low temperature noise model according to claim 1, characterized in that, Step 602, transistor gate induced noise power spectral density S Ig The calculation is performed using the following expression: （15） In the formula, ω is the angular frequency, ω = 2πf, f is the operating frequency of the transistor, and A ig B ig C ig The expressions are as follows: （16） （17） （18）。

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