A novel silicon-on-insulator wafer and its fabrication method

By fabricating TRL or porous silicon on silicon wafers and injecting hydrogen, combined with low-temperature bonding and high-temperature stripping methods, the problems of large back gate leakage current and poor SiO2 step coverage in radio frequency circuits were solved, resulting in lower back gate leakage current and a smoother surface.

CN117594522BActive Publication Date: 2026-06-30INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
Filing Date
2023-12-25
Publication Date
2026-06-30

AI Technical Summary

Technical Problem

Existing RF circuits suffer from large back-gate leakage current, which affects the back-gate control capability. At the same time, the SiO2 grown by the deposition process has poor step coverage, low surface flatness, and slow yield.

Method used

A novel silicon-on-insulator (SiO2) wafer is prepared by fabricating TRL or porous silicon on a silicon wafer and implanting hydrogen to form a hydrogen-implanted silicon wafer. Then, a novel silicon-on-insulator wafer is prepared by low-temperature bonding and high-temperature peeling, including growing SiO2 as a BOX on the substrate and forming a smoother interface by thermal oxidation.

Benefits of technology

It achieves lower back gate leakage current capability, improves back gate control capability, and forms a smoother, flatter, and more uniform bonding surface.

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Abstract

This invention provides a novel silicon-on-insulator (SOI) wafer and its fabrication method. The fabrication method of the novel SOI wafer of this invention includes the following steps: S1: Fabricating a TRL or porous silicon on a silicon wafer and implanting hydrogen to form a hydrogen-implanted silicon wafer; S2: Growing SiO2 on a substrate as BOX2, flipping the hydrogen-implanted silicon wafer and bonding it to BOX2 at low temperature; S3: After high-temperature peeling, growing SiO2 on the TRL or porous silicon as BOX1; S4: Implanting hydrogen into the silicon wafer, then flipping it and bonding it to BOX1 at low temperature, followed by high-temperature peeling to form SOI, thus obtaining the novel SOI wafer. The novel SOI wafer of this invention has a lower back-gate leakage current capability.
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