A deep trench capacitor structure and method of manufacturing the same

Abstract

The present application relates to a kind of deep trench capacitor structure and its manufacturing method.Deep trench capacitor structure includes silicon interposer, the silicon interposer is configured as internal arrangement multiple metal tracks;Deep trench capacitor, the deep trench capacitor is configured as attached to the first surface of the silicon interposer;The deep trench capacitor includes wafer, multiple contact vias arranged in the wafer, and first dielectric layer, upper electrode, lower electrode, second dielectric layer and plastic encapsulation layer arranged in the first surface of the wafer;The deep trench capacitor is electrically connected with the multiple metal tracks in the silicon interposer by the contact via.By depositing electrode and dielectric layer on the deep trench array etched, deep trench capacitor is made in the way of plastic encapsulation, integrated to silicon interposer, has better compatibility to through silicon via, and manufacturing process is simpler, and the compatibility of existing process is higher.

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