A side focus detection device and method

Abstract

The application discloses a kind of side face focus-pursuing detection device and detection method.Therein, the detection device includes: bearing structure, for fixing silicon wafer and driving silicon wafer to rotate;Imaging unit, for imaging the side face of silicon wafer;Compensation structure, opposite fixedly arranged with imaging unit, for driving imaging unit to move;Control unit, respectively with imaging unit and compensation structure communication connection, for in the different rotation of bearing structure, control compensation structure moves while real-time acquisition imaging image of imaging unit, and according to the movement of compensation structure under preset imaging requirement determines the eccentricity of silicon wafer;According to the demand rotation, the size of silicon wafer, the position information of imaging unit and eccentricity determines the compensation of compensation structure, and according to the compensation amount control compensation structure moves, and controls imaging unit to detect the side face of silicon wafer.The technical scheme of the application improves the precision of the side face detection of silicon wafer, and realizes the function of focus-pursuing simultaneously.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor detection, and in particular to a side surface focus-pursuing detection device and method. BACKGROUND

[0002] Silicon wafer side surface detection is one of the important links of silicon wafer full detection. Since the silicon wafer side surface is a curved surface, there is a problem of difficult focus surface positioning when the silicon wafer side surface is detected.

[0003] A conventional solution is to have a camera facing the silicon wafer side surface, rotate the silicon wafer, and adjust the focus surface by moving the camera forward and backward to take a photo for detection. However, this solution can only move the focus surface in a single direction. In fact, due to the eccentricity of the wafer, the error between the actual focus surface and the theoretical focus surface is not only the distance d but also the angle θ. The change of the focus surface is two-dimensional. In a high-precision scenario, not compensating for the angle θ will have a great impact on the image quality and affect the final detection result. SUMMARY

[0004] The present application provides a side surface focus-pursuing detection device and method to solve the problem of inaccurate camera focus surface positioning when detecting the silicon wafer side surface in the prior art, thereby affecting the silicon wafer side surface detection result.

[0005] According to an aspect of the present application, a side surface focus-pursuing detection device is provided, which comprises:

[0006] A bearing structure for fixing and rotating the silicon wafer;

[0007] An imaging unit for imaging the silicon wafer side surface;

[0008] A compensation structure fixed opposite to the imaging unit for moving the imaging unit;

[0009] A control unit in communication with the imaging unit and the compensation structure for moving the compensation structure while real-time acquiring the imaging image of the imaging unit at different rotation amounts of the bearing structure, determining the eccentricity of the silicon wafer according to the movement amount of the compensation structure under the preset imaging requirement, determining the compensation amount of the compensation structure according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit, and the eccentricity, and controlling the compensation structure to move according to the compensation amount and controlling the imaging unit to detect the silicon wafer side surface.

[0010] Optionally, the compensation structure comprises a translation compensation structure and a rotation compensation structure.

[0011] The translation compensation structure is used to move the imaging unit, and the rotation compensation structure is used to rotate the imaging unit.

[0012] Optionally, the translation compensation structure comprises a sliding block, a guide rail, and a first driving module.

[0013] The sliding block is in sliding connection with the guide rail and is fixedly connected with the first driving module;

[0014] The rotation compensation structure comprises a first rotary table;

[0015] The first rotary table is fixedly connected with the first driving module;

[0016] The control unit is in communication connection with the first driving module, and is configured to control the first driving module to move, so as to drive the sliding block to move along the guide rail and / or drive the first rotary table to rotate.

[0017] Optionally, the bearing structure comprises a second rotary table and a second driving module;

[0018] The second rotary table is fixedly connected with the second driving module;

[0019] The control unit is in communication connection with the second driving module, and is configured to control the second driving module to move, so as to drive the second rotary table to rotate.

[0020] Optionally, the imaging unit comprises a light source, a semi-transmissive lens and a camera;

[0021] The light source is configured to emit detection light, the semi-transmissive lens is configured to receive the detection light and to make the detection light incident on a side surface of the silicon wafer, the side surface of the silicon wafer is configured to reflect the detection light to the camera, and the camera is configured to image the side surface of the silicon wafer according to the detection light.

[0022] According to another aspect of the present application, a detection method for side surface focus tracking is provided, which is applied to a detection device for side surface focus tracking, and the detection method comprises the following steps:

[0023] At different rotation amounts of the bearing structure, the imaging image of the imaging unit is acquired in real time while the compensation structure is controlled to move;

[0024] The eccentricity of the silicon wafer is determined according to the movement amount of the compensation structure under the preset imaging requirement;

[0025] The compensation amount of the compensation structure is determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity, and the compensation structure is controlled to move according to the compensation amount;

[0026] The imaging unit is controlled to detect the side surface of the silicon wafer.

[0027] Optionally, at different rotation amounts of the bearing structure, the imaging image of the imaging unit is acquired in real time while the compensation structure is controlled to move, and the acquiring comprises the following steps:

[0028] At a first rotation amount of the bearing structure, a first imaging image of the imaging unit corresponding to the first rotation amount is acquired while the compensation structure is controlled to move;

[0029] Under the second rotation amount of the bearing structure, the second imaging image of the imaging unit corresponding to the second rotation amount is acquired while the movement of the compensation structure is controlled;

[0030] Under the third rotation amount of the bearing structure, the third imaging image of the imaging unit corresponding to the third rotation amount is acquired while the movement of the compensation structure is controlled;

[0031] The eccentricity of the silicon wafer is determined according to the movement amount of the compensation structure under the preset imaging requirement, comprising:

[0032] The first movement amount of the compensation structure under the first rotation amount is determined according to the first imaging image and the preset imaging requirement;

[0033] The second movement amount of the compensation structure under the second rotation amount is determined according to the second imaging image and the preset imaging requirement;

[0034] The third movement amount of the compensation structure under the third rotation amount is determined according to the third imaging image and the preset imaging requirement;

[0035] The eccentricity of the silicon wafer is determined according to the first movement amount, the second movement amount and the third movement amount.

[0036] Optionally, the compensation structure comprises a translation compensation structure and a rotation compensation structure;

[0037] The compensation amount of the compensation structure is determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity, and the movement of the compensation structure is controlled according to the compensation amount, comprising:

[0038] The translation amount of the translation compensation structure and the rotation amount of the rotation compensation structure are determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity;

[0039] The translation of the translation compensation structure is controlled according to the translation amount, and the rotation of the rotation compensation structure is controlled according to the rotation amount.

[0040] Optionally, the translation amount of the translation compensation structure is determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity, comprising:

[0041] The eccentricity angle is determined according to the eccentricity, and the imaging angle is determined according to the position information of the imaging unit;

[0042] The translation amount d is determined according to the required rotation amount T, the radius r of the silicon wafer, the eccentricity angle rz, the eccentricity C and the imaging angle T C The translation amount d satisfies

[0043]

[0044] Optionally, the rotation amount of the rotation compensation structure is determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity, comprising:

[0045] The eccentricity angle is determined according to the eccentricity, and the imaging angle is determined according to the position information of the imaging unit;

[0046] The imaging angle T is determined according to the required rotation amount T, the radius r of the silicon wafer, the eccentricity angle rz, the eccentricity C and the imaging angle T C The rotation amount θ is determined, and the rotation amount θ satisfies

[0047]

[0048] The technical scheme of the present application, by setting the bearing structure, imaging unit, compensation structure and control unit in the side surface detection device, fixing the imaging unit on the compensation structure, so that the compensation structure can drive the imaging unit to move, thereby having the moving compensation ability of the focal plane, improving the precision of the side surface detection of the silicon wafer; at the same time, the control unit is respectively connected with the imaging unit and the compensation structure, so that the control unit can determine the eccentricity of the silicon wafer according to the moving amount of the compensation unit, and then determine the compensation amount of the compensation structure under different required rotation amounts, and drive the compensation module to move, realize the focus tracking.

[0049] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present application, nor is it used to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0050] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0051] Figure 1 is a structure schematic diagram of a side surface focus tracking detection device provided by an embodiment of the present application;

[0052] Figure 2 is a connection schematic diagram of a side surface focus tracking detection device provided by an embodiment of the present application;

[0053] Figure 3 is a compensation principle schematic diagram of a side surface focus tracking provided by an embodiment of the present application;

[0054] Figure 4 is a focus tracking schematic diagram of a translational compensation structure provided by an embodiment of the present application;

[0055] Figure 5 is a focus tracking schematic diagram of a rotational compensation structure provided by an embodiment of the present application;

[0056] Figure 6 is a flow chart of a first side focus detection method according to an embodiment of the present application;

[0057] Figure 7 is a flow chart of a second side focus detection method according to an embodiment of the present application;

[0058] Figure 8 is a flow chart of a third side focus detection method according to an embodiment of the present application;

[0059] Figure 9 is a flow chart of a fourth side focus detection method according to an embodiment of the present application;

[0060] Figure 10 is a flow chart of a fifth side focus detection method according to an embodiment of the present application. DETAILED DESCRIPTION

[0061] In order to make the personnel in the art better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work should belong to the scope of protection of the present application.

[0062] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0063] Figure 1 is a structural schematic diagram of a side focus detection device according to an embodiment of the present application, Figure 2 is a connection schematic diagram of a side focus detection device according to an embodiment of the present application, Figure 3 is a compensation principle schematic diagram of a side focus detection device according to an embodiment of the present application, which can be applied to the side detection of a silicon wafer in a semiconductor process flow. In combination with Figure 1 、 Figure 2 and Figure 3 , the detection device comprises:

[0064] a bearing structure 1 for fixing and rotating the silicon wafer 4;

[0065] An imaging unit 2 is arranged to image the side of the silicon wafer 4.

[0066] A compensation structure 3 is arranged opposite to the imaging unit 2 to drive the imaging unit 2 to move.

[0067] A control unit 5 is communicatively connected to the imaging unit 2 and the compensation structure 3 to control the compensation structure 3 to move while the imaging unit 2 is imaging in real time when the carrier structure 1 is rotating, and determine the eccentricity of the silicon wafer 4 according to the movement of the compensation structure 3 under the preset imaging requirement. The compensation amount of the compensation structure 3 is determined according to the required rotation amount, the size of the silicon wafer 4, the position information of the imaging unit 2 and the eccentricity, and the compensation structure 3 is controlled to move according to the compensation amount, and the imaging unit 2 is controlled to detect the side of the silicon wafer 4.

[0068] The carrier structure 1 is used to fix the silicon wafer 4, and the silicon wafer 4 is placed on the carrier structure 1, and the carrier structure 1 can fix the silicon wafer 4 by vacuum adsorption. At the same time, the carrier structure 1 is used to drive the silicon wafer 4 to rotate, and it can be understood that since the carrier structure 1 is fixed relative to the silicon wafer 4, the rotation amount of the carrier structure 1 is the rotation amount of the silicon wafer 4. During the rotation of the carrier structure 1 driving the silicon wafer 4, the side of the silicon wafer 4 can be imaged in the imaging unit 2 one by one.

[0069] The imaging unit 2 is used to image the side of the silicon wafer 4, and the control unit 5 is communicatively connected to the imaging unit 2. The control unit 5 can control the imaging unit 2 to obtain the image of the side of the silicon wafer 4, and the imaging image in the imaging unit 2 can also be transmitted to the control unit 5. In some embodiments, the imaging unit 2 includes a light source 21, a half lens 22 and a camera 23. The light source 21 is used to emit detection light, the half lens 22 receives the detection light and reflects the detection light to the side of the silicon wafer 4, and the side of the silicon wafer 4 reflects the detection light to the camera 23, and the camera 23 images the side of the silicon wafer 4 according to the detection light. The light source 21 is used to emit detection light, the detection light emitted by the light source 21 is projected to the side of the silicon wafer 4 through the half lens 22, and the detection light reflected by the side of the silicon wafer 4 is imaged in the camera 23 through the half lens 22. The light source 21, the half lens 22 and the camera 23 are all arranged opposite to the compensation structure 3 to realize the consistency of the imaging light path.

[0070] The compensation structure 3 is fixedly arranged opposite to the imaging unit 2, and the compensation structure 3 is used to drive the imaging unit 2 to move. It can be understood that when the silicon wafer 4 is placed on the bearing structure 1, since it cannot be ensured that the center of each silicon wafer 4 is consistent with the set center of the bearing structure 1, that is, there is a problem of eccentricity when the silicon wafer 4 is placed, the compensation structure 3 is arranged, and the imaging unit 2 is fixedly arranged on the compensation structure 3, so that when the silicon wafer 4 is eccentric, the compensation structure 3 is moved, and then the imaging unit 2 is driven to move, the focal plane of the imaging unit 2 is adjusted to be tangent to the side surface of the silicon wafer 4, so that the imaging unit 2 obtains a clear image of the side surface of the silicon wafer 4, and the accuracy of detection of the side surface of the silicon wafer 4 is improved.

[0071] The preset imaging requirement can be an imaging image obtained when the focal plane of the imaging unit 2 is tangent to the side surface of the silicon wafer 4, as shown in FIG. 1B. Figure 3 The F' is a theoretical focal plane of the imaging unit 2 before the imaging unit 2 is moved, and the F is an actual focal plane of the imaging unit 2 after the imaging unit 2 is moved. It can be seen that the focal plane of the imaging unit 2 is tangent to the side surface of the silicon wafer 4. It can be understood that the contrast of the image in the imaging image under this condition is the largest. The eccentricity can be a vector from the set center of the bearing structure 1 to the center of the silicon wafer 4 after the silicon wafer 4 is placed, as shown in FIG. 1C. Figure 3 The O point in FIG. 1C points to the C point. The required rotation amount is the rotation angle of the current bearing structure 1 relative to the initial bearing structure 1. It can be understood that the side surface imaging image of the silicon wafer 4 corresponding to different rotation amounts is different. The position information of the imaging unit 2 can be an included angle between a detected light ray in the imaging unit 2 and the x direction, that is, an installation position of the imaging unit 2.

[0072] Specifically, the silicon wafer 4 is placed on the bearing structure 1, the bearing structure 1 fixes the silicon wafer 4 and rotates by a first rotation amount, the control unit 5 controls the compensation structure 3 to move and obtains a first imaging image of the imaging unit 2 under the first rotation amount of the bearing structure 1 in real time, the control unit 5 judges the first imaging image with the maximum pattern contrast in the imaging image according to the preset imaging requirement, and determines the first movement amount of the corresponding compensation structure 3 according to the first imaging image with the maximum pattern contrast; the bearing structure 1 fixes the silicon wafer 4 and rotates by a second rotation amount, the control unit 5 controls the compensation structure 3 to move and obtains a second imaging image of the imaging unit 2 under the second rotation amount of the bearing structure 1 in real time, the control unit 5 judges the second imaging image with the maximum pattern contrast in the imaging image according to the preset imaging requirement, and determines the second movement amount of the corresponding compensation structure 3 according to the second imaging image with the maximum pattern contrast; the bearing structure 1 fixes the silicon wafer 4 and rotates by a third rotation amount, the control unit 5 controls the compensation structure 3 to move and obtains a third imaging image of the imaging unit 2 under the third rotation amount of the bearing structure 1 in real time, the control unit 5 judges the third imaging image with the maximum pattern contrast in the imaging image according to the preset imaging requirement, and determines the third movement amount of the corresponding compensation structure 3 according to the third imaging image with the maximum pattern contrast. The eccentricity of the silicon wafer 4 is determined according to the first movement amount, the second movement amount and the third movement amount. The compensation amount of the compensation structure 3 under the required rotation amount of the silicon wafer 4 is determined according to the required rotation amount of the silicon wafer 4, the size of the silicon wafer 4, the position information of the imaging unit 2 and the eccentricity, and the compensation structure 3 is controlled to move according to the compensation amount, and the imaging unit 2 is controlled to detect the side surface of the silicon wafer 4.

[0073] The technical scheme of the embodiment of the present application has the following beneficial effects. The bearing structure, the imaging unit, the compensation structure and the control unit are arranged in the side surface detection device, the imaging unit is fixed on the compensation structure, so that the compensation structure can drive the imaging unit to move, thereby having the movement compensation capability of the focal plane and improving the precision of the side surface detection of the silicon wafer. Meanwhile, the control unit is in communication connection with the imaging unit and the compensation structure, so that the control unit can determine the eccentricity of the silicon wafer according to the movement amount of the compensation unit, further determine the compensation amount of the compensation structure under different required rotation amounts, and drive the compensation module to move, thereby realizing the focus pursuit.

[0074] Optionally, Figure 4 is a focus pursuit schematic diagram of a translational compensation structure according to the embodiment of the present application, Figure 5 is a focus pursuit schematic diagram of a rotational compensation structure according to the embodiment of the present application, which is combined with reference Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 , the compensation structure 3 includes a translational compensation structure 31 and a rotational compensation structure 32.

[0075] The translation compensation structure 31 is used to drive the translation of the imaging unit 2, and the rotation compensation structure 32 is used to drive the rotation of the imaging unit 2.

[0076] The translation compensation structure 31 can move along the x direction and is used to drive the translation of the imaging unit 2 in the x direction, so that the focal plane of the imaging unit 2 coincides with the side surface of the silicon wafer 4, and then the side surface of the silicon wafer 4 is clearly imaged in the camera 23.

[0077] The rotation compensation structure 32 is used to drive the rotation of the imaging unit 2, so that the focal plane of the imaging unit 2 is perpendicular to the side surface of the silicon wafer 4.

[0078] It can be understood that, by controlling the movement of the translation compensation structure 31, the focal plane of the imaging unit 2 can be translated in the x direction, and by controlling the rotation compensation structure 32, the focal plane of the imaging unit 2 can be rotated, and the two are combined to adjust the focal plane of the imaging unit 2 to be tangent to the side surface of the silicon wafer 4, so as to obtain the side surface image of the silicon wafer 4 with the maximum image contrast in the imaging image.

[0079] For example, as shown in the figure, d is the required translation amount of the silicon wafer 4, the movement distance d of the translation compensation structure 31 is controlled, so that the focal plane of the imaging unit 2 is translated in the x direction to be in contact with the side surface of the silicon wafer 4; θ is the required rotation amount of the silicon wafer 4, the rotation angle θ of the rotation compensation structure 32 is controlled, so that the focal plane of the imaging unit 2 is tangent to the side surface of the silicon wafer 4, and the focusing of the focal plane of the imaging unit 2 to the side surface of the silicon wafer 4 is realized. Figure 3

[0080] In some embodiments, the translation compensation structure 31 includes a sliding block 311, a guide rail 312 and a first driving module 313; the sliding block 311 is slidingly connected with the guide rail 312 and is fixedly connected with the first driving module 313; the rotation compensation structure 32 includes a first rotary table 321; the first rotary table 321 is fixedly connected with the first driving module 313; a control unit 5 is in communication connection with the first driving module 313 and is used to control the movement of the first driving module 313 to drive the sliding block 311 to move along the guide rail 312 and / or drive the first rotary table 321 to rotate. The guide rail 312 extends along the x direction, and by controlling the first driving module 313, the sliding block 311 can drive the imaging unit 2 to slide along the guide rail 312, so that the focal plane of the imaging unit 2 is translated in the x direction; the first rotary table 321 can be fixed on the sliding block 311, and the first driving module 313 can be controlled to drive the imaging unit 2 to rotate and make rotational compensation while the sliding block 311 is translated.

[0081] The technical scheme of the embodiment of the application sets the translation compensation structure and the rotation compensation structure, so that the imaging unit can have the translation focusing ability and the rotation focusing ability, the focusing plane can be compensated in real time, and the precision of the side surface detection of the silicon wafer is improved. ​

[0082] Optionally, with reference to Figure 1 and Figure 2 As shown in the figure, the bearing structure 1 includes a second rotary table 11 and a second driving module 12;

[0083] The second rotary table 11 is fixedly connected with the second driving module 12.

[0084] The control unit 5 is in communication connection with the second driving module 12, and is used to control the second driving module 12 to move, so as to drive the second rotary table 11 to rotate.

[0085] The second rotary table 11 realizes the functions of fixing and driving the silicon wafer 4, the second rotary table 11 is fixedly connected with the second driving module 12, and when the control unit 5 controls the second driving module 12 to move, the second rotary table 11 is driven to rotate, and then the silicon wafer 4 is driven to rotate.

[0086] It can be understood that the control unit 5 can control the second rotary table 11 to rotate to a required angle according to a required rotation amount, and then an imaging image of a required rotation angle of the silicon wafer 4 is obtained.

[0087] The technical scheme of the embodiment of the application, by arranging the second rotary table and the second driving module in the bearing structure, controlling the second driving module to control the second rotary table to rotate, so that the imaging unit can image the side of the silicon wafer one by one in the movement process of the silicon wafer.

[0088] Based on the same inventive concept, the embodiment of the application also provides a detection method for side focus tracking, which is applied to the detection device for side focus tracking, Figure 6 is a flowchart of the first detection method for side focus tracking provided by the embodiment of the application, combined with Figure 1 、 Figure 2 and Figure 6 As shown in the figure, the detection method includes:

[0089] S10, under different rotation amounts of the bearing structure, the imaging image of the imaging unit is acquired in real time while the compensation structure is controlled to move.

[0090] Wherein, the side focus tracking of the silicon wafer 4 first needs to determine the position of the center of the silicon wafer 4. Based on the principle of geometry, three points define a circle, so the different rotation amounts of the bearing structure 1 need to be at least three. Under different rotation amounts of the bearing structure 1, the compensation structure 3 needs to be controlled to move to track the focus and the imaging image of the imaging unit 2 is acquired in real time, and then whether the side of the silicon wafer 4 is imaged on the focal plane position is judged by using the imaging image.

[0091] S11, according to the movement amount of the compensation structure under the preset imaging requirement, the eccentricity of the silicon wafer is determined.

[0092] The preset imaging requirement can be an imaging image obtained when the focal plane of the imaging unit 2 is tangent to the side surface of the silicon wafer 4, and it can be understood that the pattern contrast in the imaging image in this case is the largest. The imaging image with the largest pattern contrast is determined according to the preset imaging requirement, and the movement amount of the compensation structure 3 corresponding to the imaging image is obtained. The eccentricity can be a vector from the set center direction to the center of the silicon wafer 4 after the wafer is placed.

[0093] It can be understood that since the different rotation amounts of the bearing structure 1 are at least three, the movement amount of the compensation structure 3 obtained according to the preset imaging requirement also corresponds to at least three, and the eccentricity of the silicon wafer 4 is determined.

[0094] S12, determine the compensation amount of the compensation structure according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit, and the eccentricity, and control the compensation structure to move according to the compensation amount.

[0095] The required rotation amount is the rotation angle of the current bearing structure 1 relative to the initial bearing structure 1 position, and it can be understood that the side imaging image of the silicon wafer 4 under different rotation amounts is different. The position information of the imaging unit 2 can be the angle between the detected light in the imaging unit 2 and the x direction, that is, the installation position of the imaging unit 2.

[0096] Since the position of the center of the silicon wafer 4 is known, the compensation amount of the compensation structure 3 under the required rotation amount can be determined according to the required rotation amount, the size of the silicon wafer 4, the position information of the imaging unit 2, and the eccentricity, and the compensation structure 3 is controlled to move, so as to realize the focus pursuit for the side detection of the silicon wafer 4.

[0097] S13, control the imaging unit to detect the side surface of the silicon wafer.

[0098] The technical scheme of the embodiment of the present application obtains the imaging image through the control unit, determines the movement amount of the compensation unit according to the imaging image, and then determines the eccentricity of the silicon wafer, calculates the compensation amount of the compensation structure under different required rotation amounts according to the eccentricity, and drives the compensation module to move, so as to realize the focus pursuit and improve the precision of the side detection of the silicon wafer.

[0099] On the basis of the above embodiment, Figure 7 is a flow chart of a second side focus pursuit detection method provided by the embodiment of the present application, as shown in Figure 1 、 Figure 2 、 Figure 3 and Figure 7 , the detection method comprises:

[0100] S20, acquiring a first imaging image of the imaging unit corresponding to the first rotation amount of the bearing structure while controlling the movement of the compensation structure under the first rotation amount of the bearing structure, acquiring a second imaging image of the imaging unit corresponding to the second rotation amount of the bearing structure while controlling the movement of the compensation structure under the second rotation amount of the bearing structure, and acquiring a third imaging image of the imaging unit corresponding to the third rotation amount of the bearing structure while controlling the movement of the compensation structure under the third rotation amount of the bearing structure.

[0101] S21, determining a first movement amount of the compensation structure under the first rotation amount according to the first imaging image and the preset imaging requirement, determining a second movement amount of the compensation structure under the second rotation amount according to the second imaging image and the preset imaging requirement, and determining a third movement amount of the compensation structure under the third rotation amount according to the third imaging image and the preset imaging requirement.

[0102] S22, determining the eccentricity of the silicon wafer according to the first movement amount, the second movement amount and the third movement amount.

[0103] Specifically, taking three different rotation amounts as an example, the silicon wafer 4 is placed on the bearing structure 1, the bearing structure 1 fixes the silicon wafer 4 and rotates a first rotation amount, the control unit 5 controls the movement of the compensation structure 3 and acquires a first imaging image of the imaging unit 2 under the first rotation amount of the bearing structure 1 in real time, the control unit 5 judges the first imaging image with the maximum pattern contrast in the imaging image according to the preset imaging requirement, and determines the first movement amount (d1, θ1) of the corresponding compensation structure 3 according to the first imaging image with the maximum pattern contrast. The bearing structure 1 fixes the silicon wafer 4 and rotates a second rotation amount, the control unit 5 controls the movement of the compensation structure 3 and acquires a second imaging image of the imaging unit 2 under the second rotation amount of the bearing structure 1 in real time, the control unit 5 judges the second imaging image with the maximum pattern contrast in the imaging image according to the preset imaging requirement, and determines the second movement amount (d2, θ2) of the corresponding compensation structure 3 according to the second imaging image with the maximum pattern contrast. The bearing structure 1 fixes the silicon wafer 4 and rotates a third rotation amount, the control unit 5 controls the movement of the compensation structure 3 and acquires a third imaging image of the imaging unit 2 under the third rotation amount of the bearing structure 1 in real time, the control unit 5 judges the third imaging image with the maximum pattern contrast in the imaging image according to the preset imaging requirement, and determines the third movement amount (d3, θ3) of the corresponding compensation structure 3 according to the third imaging image with the maximum pattern contrast. The eccentricity (Cx, Cy) of the silicon wafer 4 is determined according to the first movement amount (d1, θ1), the second movement amount (d2, θ2) and the third movement amount (d3, θ3).

[0104] S23, determining the compensation amount of the compensation structure according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity, and controlling the movement of the compensation structure according to the compensation amount.

[0105] S24, controlling the imaging unit to detect the side surface of the silicon wafer.

[0106] The technical scheme of the embodiment of the present application acquires a first imaging image under a first rotation amount of a bearing structure, a second imaging image under a second rotation amount, and a third imaging image under a third rotation amount, determines a first movement amount of the first imaging image, a second movement amount of the second imaging image, and a third movement amount of the third imaging image under a preset imaging requirement, and determines an eccentricity according to the first movement amount, the second movement amount, and the third movement amount, and then determines a compensation amount of a compensation structure to perform focus tracking.

[0107] On the basis of the above embodiment, the compensation structure 3 includes a translational compensation structure 31 and a rotational compensation structure 32, Figure 8 The flow chart of a third side focus tracking detection method according to the embodiment of the present application is shown in FIG. 3, which includes the following steps: Figure 1 、 Figure 2 、 Figure 3 and Figure 8 The flow chart of a third side focus tracking detection method according to the embodiment of the present application is shown in FIG. 3, which includes the following steps:

[0108] S30, acquiring imaging images of the imaging unit in real time while moving the compensation structure under different rotation amounts of the bearing structure.

[0109] S31, determining an eccentricity of the silicon wafer according to movement amounts of the compensation structure under a preset imaging requirement.

[0110] S32, determining a translational amount of the translational compensation structure and a rotation amount of the rotational compensation structure according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit, and the eccentricity.

[0111] The translational amount of the translational compensation structure 31 can determine the movement amount of the compensation structure 3 along the x direction, so that the focal plane of the imaging unit 2 coincides with the side surface of the silicon wafer 4, and then the side surface of the silicon wafer 4 is clearly imaged in the camera 23.

[0112] The rotation amount of the rotational compensation structure 32 can determine the rotation angle of the compensation structure 3, so that the focal plane of the imaging unit 2 is perpendicular to the side surface of the silicon wafer 4.

[0113] S33, controlling the translational compensation structure to translate according to the translational amount, and controlling the rotational compensation structure to rotate according to the rotation amount.

[0114] The translational compensation structure 31 can make the focal plane of the imaging unit 2 translate along the x direction, and the rotational compensation structure 32 can make the focal plane of the imaging unit 2 rotate, and the two together adjust the focal plane of the imaging unit 2 to be tangent to the side surface of the silicon wafer 4 to obtain the silicon wafer 4 side surface image with the maximum image contrast in the imaging image.

[0115] S34, control the imaging unit to detect the side surface of the silicon wafer.

[0116] The technical scheme of the embodiment of the present application determines the translation amount of the translation compensation structure and the rotation amount of the rotation compensation structure, so that the imaging unit has translation focus pursuit capability and rotation focus pursuit capability, the focus surface is compensated in real time, and the precision of the silicon wafer side surface detection is improved.

[0117] On the basis of the above embodiment, the compensation structure 3 includes a translation compensation structure 31 and a rotation compensation structure 32, Figure 9 is a flow chart of a fourth side surface focus pursuit detection method according to an embodiment of the present application, as shown in Figure 1 、 Figure 2 、 Figure 3 and Figure 9 , the detection method comprises:

[0118] S40, while moving the compensation structure, the imaging image of the imaging unit is acquired in real time under different rotation amounts of the bearing structure.

[0119] S41, the eccentric amount of the silicon wafer is determined according to the movement amount of the compensation structure under the preset imaging requirement.

[0120] S42, the eccentric angle is determined according to the eccentric amount, and the imaging angle is determined according to the position information of the imaging unit.

[0121] The eccentric angle can be the angle between the eccentric amount and the x direction, and the imaging angle can be the angle between the detection light in the imaging unit 2 and the x direction.

[0122] S43, the translation amount d is determined according to the required rotation amount T, the radius r of the silicon wafer, the eccentric angle rz, the eccentric amount C and the imaging angle T C The translation amount d satisfies

[0123]

[0124] The required rotation amount is the rotation angle of the current bearing structure 1 relative to the initial bearing structure 1 position. It can be understood that the side surface imaging image of the silicon wafer 4 is different under different rotation amounts. According to The focus surface error of the imaging unit 2 under different required rotation amounts of the silicon wafer 4 is calculated, and then the focus surface of the imaging unit 2 is adjusted to coincide with the side surface of the silicon wafer 4.

[0125] S44, the rotation amount of the rotation compensation structure is determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentric amount.

[0126] S45, the translation compensation structure is controlled to translate according to the translation amount, and the rotation compensation structure is controlled to rotate according to the rotation amount.

[0127] S46, control the imaging unit to detect the side surface of the silicon wafer.

[0128] The technical scheme of the embodiment of the present application determines the translational amount according to the required rotation amount, the radius of the silicon wafer, the eccentric angle, the eccentric amount and the imaging angle, and then controls the movement of the compensation structure to eliminate the error of the silicon wafer eccentricity and improve the precision of the silicon wafer detection.

[0129] On the basis of the above embodiment, Figure 10 The flow chart of the fifth side surface focus-pursuing detection method provided by the embodiment of the present application is shown in FIG. 5, which comprises the following steps: Figure 1 、 Figure 2 and Figure 10 The flow chart of the fifth side surface focus-pursuing detection method provided by the embodiment of the present application is shown in FIG. 5, which comprises the following steps:

[0130] S50, control the movement of the compensation structure while real-time acquiring the imaging image of the imaging unit under different rotation amounts of the bearing structure.

[0131] S51, determine the eccentric amount of the silicon wafer according to the movement amount of the compensation structure under the preset imaging requirement.

[0132] S52, determine the translational amount of the translational compensation structure according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentric amount.

[0133] S53, determine the eccentric angle according to the eccentric amount and determine the imaging angle according to the position information of the imaging unit.

[0134] The eccentric angle can be the angle between the eccentric amount and the x direction, and the imaging angle can be the angle between the detection light in the imaging unit 2 and the x direction.

[0135] S54, determine the rotation amount θ according to the required rotation amount T, the radius r of the silicon wafer, the eccentric angle rz, the eccentric amount C and the imaging angle T C The rotation amount θ satisfies

[0136]

[0137] The required rotation amount is the rotation angle of the current bearing structure 1 relative to the initial bearing structure 1 position, and it can be understood that the side surface imaging image of the silicon wafer 4 under different rotation amounts is different. According to Calculate the focal surface error of the imaging unit 2 under different required rotation amounts of the silicon wafer 4, and then adjust the focal surface of the imaging unit 2 to coincide with the side surface of the silicon wafer 4.

[0138] S55, control the translational movement of the translational compensation structure according to the translational amount, and control the rotational movement of the rotational compensation structure according to the rotation amount.

[0139] S56, control the imaging unit to detect the side surface of the silicon wafer.

[0140] The technical scheme of the embodiment of the present application determines the rotation amount according to the required rotation amount, the radius of the silicon wafer, the eccentric angle, the eccentric amount and the imaging angle, and then controls the rotation of the compensation structure by the rotation amount, so as to eliminate the error of the silicon wafer eccentricity and improve the precision of the silicon wafer detection.

[0141] It should be understood that the various forms of flow shown above can be used to reorder, add or delete steps. For example, each step described in the present application can be executed in parallel, sequentially or in a different order, as long as the desired results of the technical scheme of the present application can be achieved, which is not limited herein.

[0142] The above detailed description does not constitute a limitation on the protection scope of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent replacement and improvement within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A detection device for lateral focus pursuit, characterized by, The detection device comprises: a bearing structure for fixing a silicon wafer and rotating the silicon wafer; an imaging unit for imaging a side surface of the silicon wafer; a compensation structure fixed opposite to the imaging unit for moving the imaging unit; a control unit in communication with the imaging unit and the compensation structure for acquiring imaging images of the imaging unit in real time while moving the compensation structure under at least three different rotating amounts of the bearing structure, determining an eccentricity of the silicon wafer according to a moving amount of the compensation structure under a preset imaging requirement, and determining a compensation amount of the compensation structure according to a required rotating amount, a size of the silicon wafer, position information of the imaging unit, and the eccentricity, and moving the compensation structure according to the compensation amount and controlling the imaging unit to detect the side surface of the silicon wafer. The compensation structure comprises a translational compensation structure and a rotational compensation structure.

2. The detection device of claim 1, wherein, The translational compensation structure is used for moving the imaging unit, and the rotational compensation structure is used for rotating the imaging unit. The translational compensation structure comprises a sliding block, a guide rail, and a first driving module.

3. The detection device of claim 2, wherein, The sliding block is in sliding connection with the guide rail and fixed connection with the first driving module. The rotational compensation structure comprises a first rotary table. The first rotary table is fixedly connected with the first driving module. The control unit is in communication with the first driving module for controlling the first driving module to move, so as to move the sliding block along the guide rail and / or rotate the first rotary table. The bearing structure comprises a second rotary table and a second driving module.

4. The detection device of claim 1, wherein, The second rotary table is fixedly connected with the second driving module. The control unit is in communication with the second driving module for controlling the second driving module to move, so as to rotate the second rotary table. The imaging unit comprises a light source, a semi-transparent lens, and a camera.

5. The detection device of claim 1, wherein, The light source is used for emitting detection light, the semi-transparent lens is used for receiving the detection light and making the detection light incident on the side surface of the silicon wafer, the side surface of the silicon wafer is used for reflecting the detection light to the camera, and the camera is used for imaging the side surface of the silicon wafer according to the detection light. The detection method is applied to the detection device of any one of claims 1-5, and the detection method comprises:

6. A method of detecting lateral focus chasing, characterized by, acquiring imaging images of the imaging unit in real time while moving the compensation structure under different rotating amounts of the bearing structure; determining an eccentricity of the silicon wafer according to a moving amount of the compensation structure under a preset imaging requirement; determining a compensation amount of the compensation structure according to a required rotating amount, a size of the silicon wafer, position information of the imaging unit, and the eccentricity, and moving the compensation structure according to the compensation amount; controlling the imaging unit to detect the side surface of the silicon wafer. The method of acquiring imaging images of the imaging unit in real time while moving the compensation structure under different rotating amounts of the bearing structure comprises:

7. The detection method according to claim 6, characterized in that, acquiring a first imaging image of the imaging unit corresponding to a first rotating amount of the bearing structure while moving the compensation structure under the first rotating amount of the bearing structure. ​ Under a second rotation amount of the bearing structure, a second imaging image of the imaging unit corresponding to the second rotation amount is acquired while the compensation structure is controlled to move; Under a third rotation amount of the bearing structure, a third imaging image of the imaging unit corresponding to the third rotation amount is acquired while the compensation structure is controlled to move; The eccentricity of the silicon wafer is determined according to the movement of the compensation structure under a preset imaging requirement, and the method comprises the steps of: A first movement of the compensation structure under the first rotation amount is determined according to the first imaging image and the preset imaging requirement; A second movement of the compensation structure under the second rotation amount is determined according to the second imaging image and the preset imaging requirement; A third movement of the compensation structure under the third rotation amount is determined according to the third imaging image and the preset imaging requirement; The eccentricity of the silicon wafer is determined according to the first movement, the second movement and the third movement.

8. The detection method of claim 6, wherein, The compensation structure comprises a translational compensation structure and a rotational compensation structure; The compensation amount of the compensation structure is determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity, and the compensation structure is controlled to move according to the compensation amount, and the method comprises the steps of: The translational amount of the translational compensation structure and the rotational amount of the rotational compensation structure are determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity; The translational compensation structure is controlled to move according to the translational amount, and the rotational compensation structure is controlled to rotate according to the rotational amount.

9. The detection method according to claim 8, characterized in that, The translational amount of the translational compensation structure is determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity, and the method comprises the steps of: An eccentricity included angle is determined according to the eccentricity, and an imaging included angle is determined according to the position information of the imaging unit; determined according to a rotation amount T, a radius r of the silicon wafer, an eccentric angle rz, an eccentric amount C, and an imaging angle T C determined according to a rotation amount T, a radius r of the silicon wafer, an eccentric angle rz, an eccentric amount C, and an imaging angle T determined according to a rotation amount T, a radius r of the silicon wafer, an eccentric angle rz, an eccentric amount C, and an imaging angle T 10. The method of claim 8, wherein, The rotational amount of the rotational compensation structure is determined according to the required rotation amount, the size of the silicon wafer, the position information of the imaging unit and the eccentricity, and the method comprises the steps of: An eccentricity included angle is determined according to the eccentricity, and an imaging included angle is determined according to the position information of the imaging unit; determining a rotation amount θ, the rotation amount θ satisfying C determining a rotation amount θ, the rotation amount θ satisfying .

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