Ceramic material, method for producing the same, and electronic device

Abstract

The application relates to the field of electronic components, in particular to a ceramic material, a preparation method thereof and an electronic component. The ceramic material comprises the following components in percentage by mass: SiO2: 80.3%-91.2%, B2O3: 0.5%-1.7%, ZrO2: 7.2%-12.4%, Al2O3: 0.8%-3.2%, alkali metal oxide: 0.3%-2.4%. The application is beneficial to reducing the dielectric constant of the ceramic material and improving the strength of the ceramic material while inhibiting the migration of silver in the electronic component, and is more suitable for electronic components with high-frequency inhibition characteristics and high reliability.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of electronic components, in particular to a ceramic material, a preparation method thereof and an electronic component. BACKGROUND

[0002] With the development of electronic communication technology, the demand for data transmission is increasing. While improving the speed of data transmission, the integrity of the signal also needs to be protected, which requires electronic components to have good high-frequency suppression effect.

[0003] To improve the high-frequency suppression characteristics of electronic components, low-dielectric ceramic materials and high-conductivity metal materials are widely used in the manufacture of electronic components. In the preparation of electronic components containing the above-mentioned materials, usually involves co-firing of multiple types of materials. Among them, the conductive material is usually a low-resistivity metal, such as silver, and the low-dielectric ceramic material is usually a glass + ceramic system. However, during the co-firing of the above two types of materials, the metal elements in the metal conductive material are prone to migrate in the ceramic material, which can cause the metal elements to migrate directionally under the driving of the electric field during the subsequent use of the electronic component, resulting in failure of the electronic component. SUMMARY

[0004] To solve the above technical problems, the present application discloses a ceramic material, a preparation method thereof and an electronic component. The ceramic material can inhibit the migration of metal elements in the ceramic material when used in electronic components, thereby improving the reliability of the electronic component.

[0005] In a first aspect, the present application provides a ceramic material, comprising the following components in mass percentage:

[0006]

[0007] In an embodiment, the content of ZrO2 is 8.2% to 11.4% and the content of SiO2 is 83.5% to 86.5% by mass percentage.

[0008] In an embodiment, the alkali metal oxide is selected from at least one of Li2O, Na2O and K2O.

[0009] In an embodiment, the dielectric constant of the ceramic material is 3.5 to 7.

[0010] In a second aspect, the present application provides a preparation method of the ceramic material according to the first aspect, comprising the following steps:

[0011] After mixing SiO2, B2O3, Al2O3 and alkali metal oxide uniformly, melting is carried out, and then quenching treatment is carried out to obtain a high borosilicate glass body;

[0012] crushing the high borosilicate glass body into high borosilicate glass powder;

[0013] mixing the high borosilicate glass powder and the ZrO2 powder uniformly to obtain the ceramic material.

[0014] In one embodiment, the melting temperature is 1200-1500℃, and the melting time is 2-6h.

[0015] In one embodiment, the D50 of the high borosilicate glass powder is 1.5-2μm, and the D50 of the ZrO2 powder is 0.2-2μm.

[0016] In a third aspect, the application provides an electronic component comprising the ceramic material of the first aspect or the ceramic material prepared by the preparation method of the second aspect.

[0017] In one embodiment, the electronic component further comprises silver.

[0018] In one embodiment, the electronic component comprises a common mode filter.

[0019] Compared with the prior art, the application has at least the following beneficial effects:

[0020] The ceramic material, the preparation method thereof and the electronic component provided by the application can effectively improve the viscosity of the glass body in the ceramic material, increase the thermal stability of the ceramic material, and inhibit the migration of metal elements in the electronic component by regulating the content of ZrO2. And by synergistically regulating the contents of SiO2, B2O3, Al2O3 and fluxing agent alkali metal oxide, a ceramic material with low dielectric constant and high strength can be obtained. In summary, by synergistically regulating the above components and contents in the ceramic material, the migration of metal elements (such as silver) in the electronic component is inhibited, and the dielectric constant of the ceramic material is reduced and its strength is improved, so that the ceramic material of the application is more suitable for electronic components with high frequency suppression characteristics and high reliability. BRIEF DESCRIPTION OF DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the application, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative labor.

[0022] Figure 1 FIG. 1 is a structural schematic diagram of a common mode filter in one embodiment of the application;

[0023] Figure 2 FIG. 2 is an equivalent circuit diagram of the internal coil of the common mode filter in one embodiment of the application;

[0024] Figure 3 Pin connection diagram for load aging test in the present application.

[0025] Legend: 11 ceramic layer, 21-ferrite layer, 31-first pin, 32-second pin, 33-third pin, 34-fourth pin, 41-load power supply. DETAILED DESCRIPTION

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0027] In the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate the orientation or positional relationship shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not intended to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0028] In addition, in addition to being used to indicate the orientation or positional relationship, the above-mentioned partial terms can also be used to indicate other meanings, for example, the term "upper" can also be used to indicate a certain dependent relationship or connection relationship in some cases. For those skilled in the art, the specific meaning of these terms in the present application can be understood according to the specific circumstances.

[0029] In addition, the terms "mount", "set", "provided with", "connect", "connected" should be broadly understood. For example, it can be fixedly connected, detachably connected, or integrally constructed; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium, or internal communication between two devices, elements or components. For those skilled in the art, the specific meaning of the above-mentioned terms in the present application can be understood according to the specific circumstances.

[0030] In addition, the terms "first", "second", and the like are mainly used to distinguish different devices, elements or components (the specific types and structures can be the same or different), and are not intended to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise stated, the meaning of "multiple" is two or more.

[0031] Currently, electronic components are typically manufactured through the following process: a low-dielectric ceramic material is made into a precisely thick and dense green ceramic tape, which serves as the circuit board material; then, using processes such as laser drilling and slurry injection, a high-conductivity metallic conductive material is used to create precise circuit patterns on the green ceramic tape through printing or photolithography; subsequently, multiple of the above circuit patterns are stacked to form a complete passive component, which is then sintered at high temperature (e.g., 800℃~1000℃) to densify it, thus creating an electronic component with a three-dimensional circuit network.

[0032] In the electronic components industry, to ensure high-frequency suppression, electronic components typically involve the co-firing of multiple materials. Conductive materials are usually low-resistivity metals (such as silver), while low-dielectric ceramic materials are typically glass-ceramic systems. However, during the co-firing process, metal elements in the conductive metal material can easily migrate into the ceramic material. This can lead to directional migration of metal elements under the influence of an electric field during subsequent use, causing electronic component failure and posing a reliability risk during operation.

[0033] In view of this, this application provides a ceramic material comprising, by weight percentage, the following components:

[0034]

[0035] Among the above components, SiO2, B2O3, and Al2O3 are the main materials for forming high borosilicate glass, which can be used as the main material for ceramic materials.

[0036] Zr4 in ZrO2 + With its large ionic radius, ZrO2 acts as an extracellular matrix in glass structures and has low solubility, making it a commonly used nucleating agent in glass-ceramics. When added in appropriate amounts, it significantly increases the viscosity of the glass structure, thereby enhancing the thermal stability of the ceramic material. The inventors discovered that when the ZrO2 content is too low (e.g., below 7.2%), its effect on the viscosity of the glass structure is insufficient, leading to inadequate material strength and difficulty in suppressing the migration of metal elements in electronic components. Conversely, when the ZrO2 content is too high (e.g., above 12.4%), it reduces the internal density of the ceramic material, making complete sintering difficult. This application addresses this issue by controlling the ZrO2 content within the aforementioned range, achieving both complete sintering of the ceramic material and suppression of metal element migration in electronic components.

[0037] Al2O3 can improve the mechanical strength and stability of the ceramic material. When the content of Al2O3 is too low (for example, less than 0.8%), the ceramic material is prone to deformation due to insufficient strength; when the content of Al2O3 is too high (for example, higher than 3.2%), the sintering temperature of the ceramic material is too high, which is not suitable for low-temperature co-firing process. By adjusting the content of Al2O3 within the above range, the ceramic material is not prone to deformation and is suitable for low-temperature co-firing process, thereby preparing an electronic component meeting the requirements.

[0038] B2O3 mainly plays a fluxing role in glass materials. When the content of B2O3 is too low (for example, less than 0.5%), B2O3 is difficult to play a fluxing role; when the content of B2O3 is too high (for example, higher than 1.7%), the stability of the glass material is poor and the structural strength of the glass is reduced. By adjusting the content of B2O3 within the above range, the liquid phase viscosity is reduced during high-temperature sintering, the formation of a uniform and dense microstructure is promoted, the glass material maintains good low-dielectric properties, and the structural strength is improved.

[0039] SiO2 is the main component of glass materials. By adjusting the content of SiO2 within the above range, a ceramic material suitable for low-temperature co-firing and low-dielectric is obtained.

[0040] As an additive, alkali metal oxide mainly plays a fluxing role. The inventors have found that when the content of alkali metal oxide is too low (for example, less than 0.3%), alkali metal oxide is difficult to play a fluxing role; when the content of alkali metal oxide is too high (for example, higher than 2.4%), the silicon-oxygen tetrahedral structure is destroyed, the thermal stability of the ceramic material is reduced, and internal structural defects are prone to form in the ceramic material. By adjusting the content of alkali metal oxide within the above range, the fluxing role of alkali metal oxide is played, and the risk of reducing the thermal stability of the ceramic material is reduced.

[0041] In an alternative embodiment, the content of ZrO2 is 8.2% to 11.4%, and the content of SiO2 is 83.5% to 86.5%. The dielectric constant of the ceramic material generally increases with the increase of the content of ZrO2. By adjusting the content of ZrO2 and SiO2 within the above range, the migration of silver in the electronic component is inhibited, and the dielectric constant of the ceramic material is reduced and the strength is improved.

[0042] In an alternative embodiment, the alkali metal oxide is selected from at least one of Li2O, Na2O, and K2O. By selecting the above alkali metal oxide, the fluxing role of the alkali metal oxide is played.

[0043] In an alternative embodiment, the ceramic material has a dielectric constant of 3.5-7. The ceramic material of the present application has a dielectric constant within the above range, which is beneficial to make the electronic component comprising the ceramic material have good high-frequency suppression performance.

[0044] The ceramic material provided by the present application can effectively improve the viscosity of the glass body in the ceramic material, increase the thermal stability of the ceramic material, and inhibit the migration of metal elements in the electronic component by regulating the content of ZrO2. And by synergistically regulating the contents of SiO2, B2O3, Al2O3 and fluxing agent alkali metal oxide, it is beneficial to obtain a ceramic material with low dielectric constant and high strength. In summary, by synergistically regulating the above components and contents in the ceramic material, the present application can inhibit the migration of metal elements (such as silver) in the electronic component, while also reducing the dielectric constant of the ceramic material and increasing its strength, making the ceramic material of the present application more suitable for electronic components with high-frequency suppression characteristics and high reliability.

[0045] In a second aspect, the present application provides a preparation method of the ceramic material according to the first aspect, comprising the following steps:

[0046] Step A, uniformly mix SiO2, B2O3, Al2O3 and alkali metal oxide, then melt and quench to obtain a high borosilicate glass body;

[0047] Step B, crushing the high borosilicate glass body into high borosilicate glass powder;

[0048] Step C, uniformly mixing the high borosilicate glass powder and ZrO2 powder to obtain the ceramic material.

[0049] In step A of the present application, the raw materials can be physically mixed by a three-dimensional mixer to mix uniformly. In the melting process, the melting temperature is 1200-1500°C, preferably 1300-1400°C, and further preferably 1330-1370°C; the melting time is 2-6h, preferably 3-5h, and further preferably 3.5-4.5h. After melting, quenching treatment is performed to obtain a high borosilicate glass body. The quenching method is not particularly limited in the present application as long as it achieves the purpose of the present application, for example, water quenching treatment. The three-dimensional mixer is not particularly limited in the present application and can be a commercially available three-dimensional mixer.

[0050] In step B of the present application, the high borosilicate glass body can be crushed into high borosilicate glass powder by ball milling. Specifically, the high borosilicate glass body can be first broken into blocks and then ball milled for 6-10h to obtain high borosilicate glass powder with the desired particle size range.

[0051] In step C of the present application, the high borosilicate glass powder and the ZrO2 powder can be mixed uniformly by a three-dimensional mixer to obtain the ceramic material.

[0052] In an alternative embodiment, the D50 of the high borosilicate glass powder is 1.5 μm to 2 μm, and the D50 of the ZrO2 powder is 0.2 μm to 2 μm. By adjusting the D50 of the high borosilicate glass powder and the ZrO2 powder within the above range, the ceramic material with excellent pressure resistance can be obtained.

[0053] The present application provides a method for preparing a ceramic material. The method comprises the following steps: uniformly mixing SiO2, B2O3, Al2O3 and alkali metal oxide, melting, quenching, obtaining a high borosilicate glass, and uniformly mixing the high borosilicate glass powder obtained by crushing and ZrO2 powder to obtain the ceramic material. The method has the characteristics of simple preparation process. The ceramic material prepared by the method can effectively inhibit the migration of metal elements (such as silver) in the ceramic material, thereby improving the reliability of the electronic component when the ceramic material is applied to the electronic component.

[0054] In a third aspect, the present application provides an electronic component, which comprises the ceramic material of any one of the embodiments of the first aspect, or the ceramic material prepared by the method of any one of the embodiments of the second aspect.

[0055] In an alternative embodiment, the electronic component further comprises silver, which serves as a conductive material in the electronic component. Since the ceramic material of the present application can effectively inhibit the migration of silver in the ceramic material when the ceramic material is used in the electronic component, the electronic component with good high-frequency suppression characteristics and reliability can be obtained.

[0056] In an alternative embodiment, the electronic component comprises a common mode filter. When the ceramic material of the present application is applied to the electronic component, the electronic component with good high-frequency suppression characteristics and reliability can be obtained.

[0057] Reference Figure 1 , Figure 1 FIG. 1 is a schematic view of the structure of a common mode filter in an embodiment of the present application. The common mode filter comprises a ceramic layer 11, a ferrite layer 21, a first pin 31, a second pin 32, a third pin 33 and a fourth pin 34. The ceramic layer 11 can be prepared from the ceramic material of the present application; the ferrite layer 21 can be prepared from a magnetic ferrite material, for example, Fe3O4; the ceramic body and the ferrite layer can be stacked and can be a multi-layer structure. The first pin 31, the second pin 32, the third pin 33 and the fourth pin 34 are external conductive pins, each pin is electrically connected to a conductive coil in the common mode filter.

[0058] The manufacturing method of the electronic component is not particularly limited. The electronic component of the present application can be manufactured, for example, by the following method:

[0059] Step a, the above prepared ceramic material is mixed with dispersant, adhesive and organic solvent, stirred by planetary ball mill, to form a uniform and flowable ceramic slurry;

[0060] Step b, the above ceramic slurry is cast, cut, coated with conductive material, laminated with magnetic material, isostatic pressing, then cut, and by degassing, co-sintering, the ceramic material and conductive material and magnetic material form a multi-material co-sintering, to obtain a densified ceramic body with complete conductive coil inside.

[0061] Step c, the ceramic body is transferred with conductive electrode by pad printing, and plated with nickel-tin, to make a complete electronic component.

[0062] In step a of the present application, the dispersant can include silane coupling agent, for example, KH-550 silane coupling agent; the adhesive can include vinyl polymer, for example, PVB (polyvinyl butyral) resin; the organic solvent includes at least one of ethyl acetate, ethanol and isobutyl alcohol. Based on the mass fraction of the ceramic material, the addition amount of dispersant is 1-4 parts, the addition amount of adhesive is 15-30 parts, and the addition amount of organic solvent is 80-125 parts. The planetary ball mill is stirred at a speed of 150 rpm-250 rpm for 12 h-20 h.

[0063] In step b of the present application, the casting, cutting, conductive material coating process, isostatic pressing, degassing and co-sintering process are not particularly limited, as long as the corresponding ceramic body can be obtained. The present application can use low temperature co-sintering process, and the co-sintering temperature is 850℃-920℃.

[0064] In step c of the present application, the pad printing of conductive electrode and the process of electroplating nickel-tin are not particularly limited, as long as the corresponding electronic component can be obtained.

[0065] The ceramic material, electronic component and its manufacturing method of the present application will be further described in combination with more specific examples.

[0066] Example 1-1

[0067] <Preparation of ceramic material>

[0068] The following raw materials are weighed according to the following mass percentage: SiO2:B2O3:ZrO2:Al2O3:Na2O = 87.41%:1.27%:7.21%:2.44%:1.67%; the SiO2, B2O3, Al2O3 and Na2O are mixed uniformly by a three-dimensional mixer, then melted, the melting temperature is 1350℃, the melting time is 4h, and a high-boron silica glass body is obtained after water quenching; the high-boron silica glass body is ball milled for 8h to obtain a high-boron silica glass powder with a D50 of 1.8μm; the ball-milled high-boron silica glass powder and ZrO2 powder with a D50 of 1.0μm are mixed uniformly to obtain a ceramic material.

[0069] <Preparation of ceramic slurry>

[0070] The following materials are weighed according to the following mass percentage: ceramic material: silane coupling agent KH550 (dispersant): organic solvent: PVB resin (binder) = 100:3:105:23; the prepared ceramic material, silane coupling agent KH550 and organic solvent are mixed, stirred by a planetary ball mill for 4h, then the PVB resin is added, and the stirring is continued by the planetary ball mill for 11h to obtain a ceramic slurry.

[0071] <Preparation of common mode filter>

[0072] The ceramic slurry is taken, and after casting, cutting, surface coating of conductive material silver paste, lamination of ferric oxide magnetic material, isostatic pressing, and then after slitting, the ceramic material, conductive material and magnetic material are formed into a multi-material co-sintering by glue removal and co-sintering at a temperature of 900℃, to obtain a densified ceramic body with a complete conductive coil formed inside; the ceramic body is subjected to external transfer printing of conductive electrode and nickel-tin electroplating to form a complete electronic component common mode filter. The size is: L (length) * W (width) * T (thickness) = 0.85mm*0.65mm*0.4mm, and the structure of the common mode filter is shown in Figure 1 , and the internal coil equivalent circuit is shown in Figure 2 .

[0073] Examples 1-2 to 1-12

[0074] Except that in the <Preparation of ceramic material>, the types and contents of the components in the ceramic material are adjusted according to Table 1, the rest is the same as Example 1-1.

[0075] Examples 2-1 to 2-4

[0076] Except that in the <Preparation of ceramic material>, the related preparation parameters are adjusted according to Table 2, the rest is the same as Example 1-1.

[0077] Comparative Examples 1 to 4

[0078] Except for adjusting the kind and content of each component in the ceramic material according to Table 1 in the preparation of the ceramic material, the rest is the same as Example 1-1.

[0079] Table 1 Preparation parameters of Examples 1-1 to 1-12 and Comparative Examples 1 to 4

[0080]

[0081] Table 2 Preparation parameters of Examples 1-1, 2-1 to 2-4

[0082]

[0083] Performance test:

[0084] Failure ratio test:

[0085] For each of the examples and comparative examples, 100 common mode filters were extracted, and load aging experiments were performed under the following conditions: temperature 85°C, humidity 85% RH, and current 130mA. Referring to Figure 3 After 1000h of load aging experiments, the third pin 33 and the fourth pin 34 were disconnected, and the insulation resistance value between the first pin 31 connected to the positive electrode of the load power supply 41 and the second pin 32 was measured. If the insulation resistance value is ≥10MΩ, it is determined to be qualified, and if the insulation resistance value is <10MΩ, it is determined to be failed. The statistical data are recorded in Table 3.

[0086] Pressure capacity test:

[0087] The ceramic material powder prepared in each of the examples and comparative examples was mixed with 10wt% PVA (polyvinyl alcohol) solution (the PVA solution was formed by mixing and stirring 10wt% ethyl cellulose and 90wt% ethyl acetate) to obtain a mixture. The mixture was ground and granulated, dry-pressed, and sintered (900°C / 40min) to form a dense ceramic body in the shape of a 0.86mm*0.65mm*0.4mm cuboid. The ceramic body was then subjected to strength pressure test until the ceramic body was damaged, and the maximum pressure measured was recorded as the maximum pressure capacity of the ceramic material.

[0088] Dielectric constant test:

[0089] The ceramic materials prepared in each of the examples and the comparative examples were mixed by adding 10 wt% of a PVA solution (the PVA solution was formed by mixing and stirring 10% by mass of ethyl cellulose and 90% by mass of ethyl acetate) into the powder. The mixture was formed into a dense ceramic body by milling and granulating, dry pressing, and de-binding and sintering (900°C / 40 min) to form a disc with a diameter D = 12 mm and a thickness H = 5 mm. A layer of metal conductor material was coated on each of the two circular faces of the disc, and the capacitance value was measured. The relative dielectric constant of the ceramic material was calculated by the formula for a parallel-plate capacitor.

[0090] Table 3: Performance parameters of each of the examples and the comparative examples

[0091]

[0092] As can be seen from Examples 1-1 to 1-12 and Comparative Examples 1 to 4, the common mode filters prepared in each of the examples of the present application have a failure rate of 0, while the common mode filters prepared in Comparative Examples 1 to 4 all have a failure rate. In the electronic component industry, because the number of applications of electronic components is usually huge, even if only a small number of electronic components tested fail, the batch of electronic components is usually considered to be unusable. The electronic components prepared in each of the examples of the present application have a failure rate of 0, indicating that the electronic components containing the ceramic materials of the present application have excellent reliability.

[0093] As can also be seen from Comparative Examples 1 to 4, when the content of ZrO2 in the ceramic material is too low (for example, Comparative Examples 1 and 2), the common mode filters begin to fail, and the failure rate increases as the content of ZrO2 in the ceramic material decreases; when the content of ZrO2 in the ceramic material is too high (for example, Comparative Examples 3 and 4), the common mode filters also begin to fail, and the failure rate increases as the content of ZrO2 in the ceramic material increases. This indicates that by adjusting the content of ZrO2 within the range of the present application, the migration of silver in the electronic component can be effectively inhibited, which is conducive to obtaining electronic components with excellent reliability.

[0094] The content and proportion of other components in the ceramic material will also generally affect the performance of the ceramic material. As can be seen from Examples 1-1 to 1-12, by adjusting the content of the components in the ceramic material within the range of the present application, ceramic materials with excellent pressure resistance and low dielectric constant can be obtained, which makes the ceramic materials more suitable for preparing electronic components with high-frequency suppression characteristics and high reliability.

[0095] It can also be seen from the examples 1-2 to 1-5 that by further regulating the content of ZrO2 in the ceramic material, the pressure resistance of the ceramic material can be improved, and the ceramic material can maintain a low dielectric constant, so that the ceramic material is more suitable for preparing electronic components with high frequency suppression characteristics and high reliability.

[0096] The type of metal oxide, the melting temperature and melting time of the ceramic material, the D50 of the high borosilicate glass body and the D50 of the ZrO2 powder generally also affect the performance of the ceramic material. As can be seen from the examples 1-1 and 2-1 to 2-4, by regulating the above parameters within the scope of the present application, a ceramic material with excellent pressure resistance and low dielectric constant can be obtained, so that the ceramic material is more suitable for preparing electronic components with high frequency suppression characteristics and high reliability.

[0097] The above describes in detail a ceramic material and a preparation method thereof disclosed in the embodiments of the present application. In this paper, specific examples are applied to explain the principles and implementation modes of the present application. The above examples are only used to help understand the technical solutions and core invention points of the embodiments of the present application. At the same time, for those skilled in the art, according to the idea of the present application, the specific implementation modes and application ranges will be changed. In summary, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A ceramic material for low temperature co-firing, characterized by, comprises the following components by mass percentage: SiO2 80.3%~91.2% B2O3 0.5%~1.7% ZrO2 7.2%~12.4% Al2O3 0.8%~3.2% alkali metal oxide 0.3%~2.4%; the alkali metal oxide is selected from at least one of Li2O, Na2O and K2O; the ceramic material is obtained by uniformly mixing high borosilicate glass powder and ZrO2 powder, wherein the high borosilicate glass powder is obtained by uniformly mixing SiO2, B2O3, Al2O3 and alkali metal oxide, melting, quenching treatment and crushing.

2. The low temperature co-fired ceramic material of claim 1, wherein, the content of ZrO2 is 8.2%~11.4% by mass percentage, and the content of SiO2 is 83.5%~86.5% by mass percentage.

3. The low temperature co-fired ceramic material of claim 1, wherein, the dielectric constant of the ceramic material is 3.5~7.

4. A method for the preparation of a low temperature co-fired ceramic material according to any one of claims 1 to 3, characterized in that comprises the following steps: uniformly mixing SiO2, B2O3, Al2O3 and alkali metal oxide, melting, quenching treatment and crushing to obtain high borosilicate glass body; crushing the high borosilicate glass body into high borosilicate glass powder; uniformly mixing the high borosilicate glass powder and ZrO2 powder to obtain the ceramic material.

5. The preparation method according to claim 4, characterized in that, the melting temperature is 1200℃~1500℃, and the melting time is 2h~6h.

6. The production method according to claim 4 or 5, characterized by, the D50 of the high borosilicate glass powder is 1.5μm~2μm, and the D50 of the ZrO2 powder is 0.2μm~2μm.

7. An electronic component, characterized by comprising: the raw material for preparing the electronic component comprises the ceramic material for low temperature co-firing according to any one of claims 1~3 or the ceramic material prepared by the preparation method according to any one of claims 4~6.

8. The electronic component of claim 7, wherein the electronic component further comprises silver.

9. The electronic component according to any one of claims 7 to 8, characterized in that, the electronic component comprises common mode filter.

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