Display device using semiconductor light emitting device and manufacturing method thereof

Abstract

The present application relates to the technical field of display devices, for example, display devices using micro LEDs (Light Emitting Diodes) and methods of manufacturing the same. Such a present application can include a substrate including a pixel region and a pad region located at a periphery of the pixel region; a separation wall layer located on the substrate and defining a plurality of unit pixel regions within the pixel region; a stress separation line located between the unit pixel regions on the separation wall layer; a first electrode located on the unit pixel region; a semiconductor light emitting device disposed within the unit pixel region such that a first type electrode is electrically connected to the first electrode; a coating layer formed on the semiconductor light emitting device and the separation wall layer; and a second electrode electrically connected to a second type electrode of the semiconductor light emitting device on the coating layer.

Description

Technical Field

[0001] The present invention can be applied to the technical field related to display devices, for example, to a display device using a micro LED (Light Emitting Diode) and a manufacturing method thereof. Background Art

[0002] In recent years, the field of display technology has seen the development of display devices with superior characteristics such as thinness and flexibility. Meanwhile, the main commercially available displays are LCDs (Liquid Crystal Displays) and OLEDs (Organic Light Emitting Diodes).

[0003] On the other hand, light-emitting diodes (LEDs) are well-known semiconductor light-emitting devices that convert electric current into light. Starting with the commercialization of red LEDs using GaAsP (gallium arsenide phosphide) compound semiconductors in 1962, they have been used, along with GaP:N series green LEDs, as light sources for displaying images in electronic devices, including information and communication equipment.

[0004] In recent years, such light emitting diodes (LEDs) have been gradually miniaturized into micrometer-sized LEDs and used as pixels in display devices.

[0005] Compared to other display devices / panels, Micro LED technology exhibits low power consumption, high brightness, and high reliability, and is suitable for flexible devices. Therefore, research institutions and companies have been actively researching it in recent years.

[0006] Regarding micro-LEDs, the technology for transferring LEDs to panels has been a hot topic in recent years. To manufacture a display device using micro-LEDs, many LEDs are required, but attaching them one by one is a difficult and time-consuming process.

[0007] On the other hand, when assembling micro LEDs, there may be a case where the micro LEDs are assembled to be deviated from the position of the unit device area.

[0008] The position of the assembly hole for the transfer of micro-LEDs can be formed and defined by a partition wall layer. To this end, a partition wall layer and assembly holes can be formed on the substrate, and then a curing process of the partition wall layer is performed. Such a curing process can generally include a thermal curing or ultraviolet curing process. Since the above-mentioned curing process is a high-temperature process, the partition wall layer may expand. As a result, the installation space (assembly hole pattern) formed at the position for the light-emitting device to be installed may move.

[0009] Therefore, depending on the position of the display device, the pattern used to display the mounting position formed on the partition wall layer and the unit pixel area defined by the actual electrodes may be misaligned. In other words, the unit pixel area defined by the electrodes and the pixel area formed on the partition wall layer may not match each other.

[0010] As described above, in the panel process of the display device, after forming the metal wiring electrodes for mounting the light-emitting device (transfer chip), when forming the partition wall layer, patterning errors of the wiring and assembly holes in the outer contour position may occur due to the bending of the substrate.

[0011] Such patterning errors may become greater as the area moves further away from the central area of ​​the display device toward the outer periphery.

[0012] Due to the aforementioned patterning errors, the brightness of the micro-LEDs may deviate, or depending on the circumstances, the micro-LEDs may not light up.

[0013] Therefore, a solution is needed to solve the problem that occurs when manufacturing a display using micro LEDs. Summary of the Invention

[0014] Problems to be solved by the invention

[0015] The technical problem to be solved by the present invention is to provide a display device using a semiconductor light emitting device and a method for manufacturing the same, which can minimize alignment tolerance that may occur in a panel process.

[0016] Furthermore, a display device using a semiconductor light emitting device and a method for manufacturing the same are provided, which can prevent a structure formed by a substrate and a partition wall layer from being bent or a position of an assembly hole formed in a unit pixel region from being changed during a panel process.

[0017] Furthermore, a display device using a semiconductor light emitting device and a method for manufacturing the same are provided, which are capable of effectively blocking stress that acts substantially in a radial direction from the center of a substrate during a panel manufacturing process.

[0018] Furthermore, the present invention provides a display device using a semiconductor light-emitting device and a method for manufacturing the same, which can effectively block stress that may be generated during thermal curing or cooling of a partition wall layer in a panel process.

[0019] In addition, a display device using a semiconductor light emitting device and a method for manufacturing the same are provided, which are capable of reducing the number of steps for connecting the semiconductor light emitting device and an upper wiring.

[0020] In addition, a display device using a semiconductor light emitting device and a manufacturing method thereof are provided, which can ensure a maximum contact area between a semiconductor light emitting device chip electrode and a second electrode (upper wiring; lighting electrode) by minimizing alignment errors in a panel post-process.

[0021] Means used to solve problems

[0022] As a first perspective for achieving the purpose, the present invention may include: a substrate, including a pixel area and a pad area located around the pixel area; a partition wall layer, located on the substrate, defining a plurality of unit pixel areas within the pixel area; a stress separation line, located between the unit pixel areas on the partition wall layer; a first electrode, located in the unit pixel area; a semiconductor light-emitting device, arranged in the unit pixel area to electrically connect a first-type electrode to the first electrode; a coating layer, formed on the semiconductor light-emitting device and the partition wall layer; and a second electrode, on the coating layer, electrically connected to the second-type electrode of the semiconductor light-emitting device.

[0023] In addition, the substrate may have a rectangular shape defined by long sides and short sides, and the stress separation line may be formed in a direction parallel to the short side direction.

[0024] In addition, the stress separation line may be formed continuously in the short side direction.

[0025] In addition, a plurality of the stress separation lines may be formed in a direction parallel to the short side direction.

[0026] In addition, the plurality of stress separation lines may be formed symmetrically with respect to a line passing through the center of the substrate.

[0027] In addition, the plurality of stress separation lines may be formed at predetermined intervals relative to a line passing through the center of the substrate.

[0028] In addition, the stress separation line may include a compensation line, and the compensation line is inclined with respect to the short side direction in the pad region.

[0029] In addition, the pad area may include a first area and a second area, the connection wiring connecting the pixel area and the driver chip is located in the first area, and the second area is located outside the driver chip.

[0030] In addition, the stress separation line may include a compensation line, and the compensation line is inclined with respect to the short side direction in the first region.

[0031] In addition, the stress separation line may include an extension line connected to the compensation line and formed in a direction parallel to the short side direction.

[0032] In addition, the stress separation line can separate transmission of at least one of stress generated due to a difference in thermal expansion coefficient between the partition wall layer and the substrate and stress generated when the partition wall layer is thermally cured.

[0033] As a second viewpoint for achieving the purpose, the present invention may include: a substrate having a rectangular shape defined by a long side and a short side, including a pixel area and a pad area located around the pixel area; a partition wall layer located on the substrate, defining a plurality of unit pixel areas within the pixel area; a stress separation line located between the unit pixel areas on the partition wall layer; and a semiconductor light-emitting device arranged in the unit pixel area; the stress separation line may have different inclinations from each other in the pixel area and the pad area.

[0034] Effects of the Invention

[0035] According to one embodiment of the present invention, the following effects are achieved.

[0036] First, according to an embodiment of the present invention, the stress separation line located between unit pixel regions (assembly holes) of the display device can prevent the phenomenon caused by the stress generated by the difference in thermal expansion coefficient between the partition wall layer and the substrate.

[0037] In addition, according to an embodiment of the present invention, it is possible to prevent the structure formed by the substrate and the partition wall layer from being bent or the position of the assembly hole formed in the unit pixel region from being changed.

[0038] In addition, according to an embodiment of the present invention, the compensation line included in the stress separation line can effectively block the stress actually acting in a radial direction from the center of the substrate.

[0039] In addition, according to an embodiment of the present invention, the stress separation line including the compensation line can effectively block stress that may be generated during thermal curing or cooling of the partition wall layer.

[0040] Furthermore, according to another embodiment of the present invention, those skilled in the art can understand the additional technical effects not mentioned herein through the entire subject matter of the specification and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 This is a conceptual diagram showing an example of a display device using a semiconductor light-emitting device according to the present invention.

[0042] Figure 2 yes Figure 1 A partial enlarged view of part A.

[0043] Figure 3a and Figure 3b It is along Figure 2 Cross-sectional view taken along lines BB and CC.

[0044] Figure 4 is a conceptual diagram illustrating the flip-chip type semiconductor light emitting device in FIG. 3 .

[0045] Figures 5a to 5c is a conceptual diagram showing various forms of realizing colors related to a flip-chip type semiconductor light emitting device.

[0046] Figure 6 This is a cross-sectional view showing an example of a method for manufacturing a display device using a semiconductor light-emitting device according to the present invention.

[0047] Figure 7 This is a perspective view showing another example of a display device using a semiconductor light-emitting device according to the present invention.

[0048] Figure 8 It is along Figure 7 A cross-sectional view taken along line DD in FIG.

[0049] Figure 9 It shows Figure 8 Conceptual diagram of a vertical semiconductor light-emitting device.

[0050] Figure 10 A top view of a display device using a semiconductor light emitting device according to an embodiment of the present invention is shown.

[0051] Figure 11 FIG. 1 is a schematic top view illustrating stress separation lines of a display device using a semiconductor light emitting device according to an embodiment of the present invention.

[0052] Figure 12 This is a schematic plan view showing an example of stress separation lines in a display device using a semiconductor light emitting device according to an embodiment of the present invention.

[0053] Figure 13 FIG. 1 is a schematic plan view showing another example of stress separation lines in a display device using a semiconductor light emitting device according to an embodiment of the present invention.

[0054] Figure 14 FIG. 1 is a cross-sectional view showing a unit pixel region of a display device using a semiconductor light emitting device according to an embodiment of the present invention.

[0055] Figure 15 This is a schematic plan view showing stress applied to a display device applicable to the present invention.

[0056] Figure 16 This is a schematic cross-sectional view illustrating the generation of stress and the resulting phenomenon in a display device to which the present invention can be applied.

[0057] Figure 17 This is a schematic plan view showing the movement direction of a pattern according to a curing step in a display device to which the present invention can be applied.

[0058] Figure 18 It shows that according to Figure 17 A photograph of the phenomenon of movement of the patterns produced by the various parts.

[0059] Figure 19 This is a graph showing changes in the thermal expansion coefficient of an organic film as a material for a partition wall layer that can be applied to one embodiment of the present invention.

[0060] Figure 20 1 is a schematic cross-sectional view illustrating a process of forming a partition wall layer in a display device using a semiconductor light emitting device according to an embodiment.

[0061] Figure 21 This is a schematic diagram showing an actual implementation example of a display device using a semiconductor light-emitting device according to an embodiment.

[0062] Figure 22 It shows Figure 21 Photos of the (1) area.

[0063] Figure 23 It shows Figure 21 Photos of the (5) area.

[0064] Figure 24 It shows Figure 21 Photos of the (9) area. DETAILED DESCRIPTION

[0065] Hereinafter, the embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings. Regardless of the figure numbers, the same or similar structural elements are given the same figure numbers, and their repeated descriptions are omitted. The suffixes "module" and "section" of the constituent elements used in the following description are only given or mixed for the convenience of writing the description, and they themselves do not have mutually distinguishable meanings or functions. In addition, in the process of describing the embodiments disclosed in this specification, when it is judged that the specific description of the relevant known technology will confuse the gist of the embodiments disclosed in this specification, the detailed description of the known technology is omitted. In addition, it should be understood that the drawings are provided to facilitate the understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited to the drawings.

[0066] Furthermore, although the drawings are described separately for the convenience of explanation, those skilled in the art can implement other embodiments by combining at least two or more drawings, which also fall within the scope of the present invention.

[0067] In addition, it will be understood that when elements such as a layer, a region or a substrate are described as being “on” different constituent elements, this means that they are directly on the other elements or intervening elements may be present therebetween.

[0068] The display device described in this specification is a concept that covers all display devices that display information in unit pixels or in sets of unit pixels. Therefore, it is not limited to finished products, and can also be applied to components. For example, the panel itself that is equivalent to a component of a digital TV is also equivalent to the display device in this specification. As finished products, they can include mobile phones, smartphones, laptop computers, digital broadcasting terminals, PDAs (personal digital assistants), PMPs (portable multimedia players), navigators, slate PCs, tablet PCs, ultrabooks, digital TVs, desktop computers, etc.

[0069] However, it is obvious to those skilled in the art that the configurations according to the embodiments described in this specification can also be applied to display devices of new product forms developed later.

[0070] In addition, the semiconductor light-emitting devices involved in this specification include concepts such as LED and micro LED, which can be used interchangeably.

[0071] Figure 1 This is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device according to the present invention.

[0072] like Figure 1 As shown, information processed in a control unit (not shown) of the display device 100 can be displayed using a flexible display.

[0073] Flexible displays include, for example, displays that can be bent, folded, twisted, folded, or rolled up by an external force.

[0074] Furthermore, a flexible display may be a display manufactured on a thin and flexible substrate that can be bent, folded, or rolled up like a piece of paper, while maintaining the display characteristics of an existing flat panel display.

[0075] In a state where the flexible display is not bent (e.g., a state with an infinite radius of curvature, hereinafter referred to as the first state), the display area of ​​the flexible display becomes a plane. In such a first state, in a state where the flexible display is bent due to an external force (e.g., a state with a finite radius of curvature, hereinafter referred to as the second state), the display area may become a curved surface. Figure 1 As shown, the information displayed in the second state can be visual information output on the curved surface. This visual information is achieved by independently controlling the light emission of unit pixels (sub-pixels) arranged in a matrix shape. For example, the unit pixel here represents the smallest unit for realizing a color.

[0076] The unit pixel of this flexible display can be implemented using a semiconductor light-emitting device. In the present invention, a light-emitting device is exemplified as a type of semiconductor light-emitting device that converts current into light. An example of a light-emitting device is a light-emitting diode (LED). Because such a light-emitting diode is small in size, it can function as a unit pixel even in the second state.

[0077] The flexible display implemented by using light emitting diodes as described above will be described in detail with reference to the following drawings.

[0078] Figure 2 yes Figure 1 A partial enlarged view of part A.

[0079] Figure 3a and Figure 3b It is along Figure 2 Cross-sectional view taken along line BB and line CC.

[0080] like Figure 2 、 Figure 3a as well as Figure 3b As shown, a display device 100 using a passive matrix (PM) semiconductor light emitting device is exemplified. However, the following examples are also applicable to active matrix (AM) semiconductor light emitting devices.

[0081] like Figure 2 As shown, the display device 100 includes a substrate 110 , a first electrode 120 , a conductive adhesive layer 130 , a second electrode 140 , and at least one semiconductor light emitting device 150 .

[0082] Substrate 110 can be a flexible substrate. For example, to achieve a flexible display device, substrate 110 can include glass or polyimide (PI). Alternatively, any insulating, flexible material can be used, such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). Furthermore, substrate 110 can be either transparent or opaque.

[0083] The substrate 110 may be a wiring substrate provided with the first electrode 120 , and thus the first electrode 120 may be located on the substrate 110 .

[0084] like Figure 3a As shown, the insulating layer 160 can be disposed on the substrate 110 provided with the first electrode 120, and the auxiliary electrode 170 can be located on the insulating layer 160. In this case, the insulating layer 160 stacked on the substrate 110 can form a wiring substrate. More specifically, the insulating layer 160 can be made of an insulating and flexible material such as polyimide (PI), PET, PEN, etc., and can be formed integrally with the substrate 110 to form a substrate.

[0085] The auxiliary electrode 170 serves as an electrode electrically connecting the first electrode 120 to the semiconductor light-emitting device 150. It is located on the insulating layer 160 and is arranged corresponding to the position of the first electrode 120. For example, the auxiliary electrode 170 has a dot shape and can be electrically connected to the first electrode 120 via an electrode hole 171 that penetrates the insulating layer 160. The electrode hole 171 can be formed by filling a via hole with a conductive material.

[0086] like Figure 2 or Figure 3a As shown, although conductive adhesive layer 130 is formed on one side of insulating layer 160, the present invention is not limited to this. For example, a layer performing a specific function may be formed between insulating layer 160 and conductive adhesive layer 130, or the conductive adhesive layer 130 may be disposed on substrate 110 without insulating layer 160. In the case where conductive adhesive layer 130 is disposed on substrate 110, conductive adhesive layer 130 may function as an insulating layer.

[0087] The conductive adhesive layer 130 may be a layer having both adhesive and conductive properties. To this end, a conductive substance and an adhesive substance may be mixed in the conductive adhesive layer 130. In addition, since the conductive adhesive layer 130 has ductility, it is possible to realize a flexible function in the display device.

[0088] As an example, the conductive adhesive layer 130 can be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 can be configured to allow electrical connection in the Z direction through the thickness of the substrate, while being electrically insulating in the horizontal XY directions. Therefore, the conductive adhesive layer 130 can be referred to as a Z-axis conductive layer (however, hereinafter referred to as the "conductive adhesive layer").

[0089] An anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and / or pressure are applied, only specific portions of the film become conductive due to the anisotropic conductive medium. Although the following description uses the state where heat and / or pressure are applied to the anisotropic conductive film, other methods can also be used to make a portion of the anisotropic conductive film conductive. For example, the other methods mentioned above may include applying only heat or pressure, or UV curing, etc.

[0090] In addition, for example, the anisotropic conductive medium can be a conductive ball or a conductive particle. For example, the anisotropic conductive film is a film in the form of conductive balls mixed in an insulating base component. If heat and pressure are applied, only a specific part has conductivity due to the conductive balls. The anisotropic conductive film can be in a state containing a plurality of particles, wherein the particles are a core of a conductive material coated with an insulating film of a polymer material. In this case, as the insulating film of the part to which heat and / or pressure is applied is destroyed, the core has conductivity. At this time, the shape of the core is deformed and layers that are in contact with each other in the thickness direction of the film can be formed. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and an electrical connection in the Z-axis direction is locally formed due to the height difference of the relative objects bonded by the anisotropic conductive film.

[0091] As another example, the anisotropic conductive film may be in a state containing a plurality of particles, wherein the particles are an insulating core coated with a conductive material. In this case, the conductive material in the portion to which heat and pressure are applied is deformed (pressed and adhered), and has conductivity along the thickness direction of the film. As another example, it may be a form in which the conductive material penetrates the insulating base member along the Z-axis direction and has conductivity along the thickness direction of the film. In this case, the conductive material may have a pointed end.

[0092] Anisotropic conductive film can be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one side of an insulating base member. More specifically, the insulating base member is formed of an adhesive material, and the conductive balls are concentrated at the bottom of the insulating base member. When heat or pressure is applied to the base member, the conductive balls deform along with the conductive balls, becoming conductive in the perpendicular direction.

[0093] However, the present invention is not limited thereto, and the anisotropic conductive film may be in a form in which conductive balls are randomly mixed in an insulating base member, or in a form consisting of a plurality of layers with conductive balls arranged in one layer (double-ACF), or the like.

[0094] Anisotropic conductive paste, as a combination of paste and conductive balls, can be a paste in which conductive balls are mixed with an insulating and adhesive base material. Alternatively, the solution containing conductive particles can be a solution containing conductive microparticles or nanoparticles.

[0095] Refer again Figure 3a The second electrode 140 is located on the insulating layer 160 in a state of being separated from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located.

[0096] When the auxiliary electrode 170 and the second electrode 140 are located on the insulating layer 160, after forming the conductive adhesive layer 130, if the semiconductor light-emitting device 150 is brought into contact in the form of a flip chip by applying heat and pressure, the semiconductor light-emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

[0097] Figure 4 is a conceptual diagram illustrating the flip-chip type semiconductor light emitting device of FIG. 3 .

[0098] Reference Figure 4 , the semiconductor light emitting device may be a flip chip type light emitting device.

[0099] For example, the semiconductor light emitting device includes: a p-type electrode 156, a p-type semiconductor layer 155 for forming the p-type electrode 156, an active layer 154 formed on the p-type semiconductor layer 155, an n-type semiconductor layer 153 formed on the active layer 154, and an n-type electrode 152 arranged on the n-type semiconductor layer 153 and spaced apart from the p-type electrode 156 in the horizontal direction. In this case, the p-type electrode 156 can be formed by Figure 3a and Figure 3b The auxiliary electrode 170 is shown electrically connected to the conductive adhesive layer 130 , and the n-type electrode 152 may be electrically connected to the second electrode 140 .

[0100] Refer again Figure 2 、 Figure 3a as well as Figure 3b The auxiliary electrode 170 is formed long in one direction, so that one auxiliary electrode can be electrically connected to a plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the semiconductor light emitting devices on the left and right sides of the auxiliary electrode can be electrically connected to one auxiliary electrode.

[0101] More specifically, due to heat and pressure, the semiconductor light-emitting device 150 is pressed into the conductive adhesive layer 130. This makes only the portion between the p-type electrode 156 of the semiconductor light-emitting device 150 and the auxiliary electrode 170, and the portion between the n-type electrode 152 of the semiconductor light-emitting device 150 and the second electrode 140 conductive. The remaining portions, not pressed into the semiconductor light-emitting device, are non-conductive. Similarly, the conductive adhesive layer 130 not only bonds the semiconductor light-emitting device 150 to the auxiliary electrode 170, and to the second electrode 140, but also creates electrical connections.

[0102] In addition, a plurality of semiconductor light emitting devices 150 constitute a light emitting device array, and a phosphor layer 180 is formed on the light emitting device array.

[0103] The light-emitting device array may include a plurality of semiconductor light-emitting devices having different brightness values. Each semiconductor light-emitting device 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, there may be a plurality of first electrodes 120. For example, the plurality of semiconductor light-emitting devices may be arranged in a plurality of columns, and the semiconductor light-emitting devices in each column may be electrically connected to any one of the plurality of first electrodes.

[0104] Furthermore, since multiple semiconductor light-emitting devices are connected in a flip-chip configuration, multiple semiconductor light-emitting devices grown on a transparent dielectric substrate can be utilized. Furthermore, the multiple semiconductor light-emitting devices can be, for example, nitride semiconductor light-emitting devices. Since the semiconductor light-emitting device 150 has excellent brightness, even a small size can constitute a single unit pixel.

[0105] like Figure 3a and Figure 3b As shown, partition walls 190 may be provided between the semiconductor light-emitting devices 150. In this case, the partition walls 190 may function to separate individual unit pixels from each other and may be formed integrally with the conductive adhesive layer 130. For example, the semiconductor light-emitting devices 150 may be inserted into an anisotropic conductive film, with the base member of the anisotropic conductive film forming the partition walls.

[0106] In addition, if the base member of the anisotropic conductive film is black, even without an additional black insulator, the partition wall 190 can have a reflective property while increasing contrast.

[0107] As another example, a reflective partition wall may be provided as partition wall 190. In this case, partition wall 190 may include a black or white insulator, depending on the purpose of the display device. A white insulator partition wall may improve reflectivity, while a black insulator partition wall may provide reflective properties while increasing contrast.

[0108] Phosphor layer 180 may be located on the outer surface of semiconductor light-emitting device 150. For example, if semiconductor light-emitting device 150 is a blue semiconductor light-emitting device that emits blue B light, phosphor layer 180 may convert the blue B light into the hue of a unit pixel. Phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 that constitutes a single pixel.

[0109] That is, at the position constituting the red unit pixel, a red phosphor 181 capable of converting blue light into red R light can be stacked on the blue semiconductor light-emitting device, and at the position constituting the green unit pixel, a green phosphor 182 capable of converting blue light into green G light can be stacked on the blue semiconductor light-emitting device. In addition, at the portion constituting the blue unit pixel, only the blue semiconductor light-emitting device can be used alone. In this case, the unit pixels of red R, green G, and blue B can constitute one pixel. More specifically, phosphors of one hue can be stacked along each line of the first electrode 120. Therefore, in the first electrode 120, one line can be an electrode that controls one hue. That is, red R, green G, and blue B can be arranged in sequence along the second electrode 140, thereby realizing a unit pixel.

[0110] However, the present invention is not limited thereto, and unit pixels of red R, green G, and blue B may be realized by combining the semiconductor light emitting device 150 and quantum dots (QD) instead of the phosphor.

[0111] In addition, in order to improve contrast, a black matrix 191 may be disposed between the phosphor layers. In other words, the black matrix 191 may improve the contrast between light and dark.

[0112] However, the present invention is not limited thereto, and other structures for realizing blue, red, and green may be used.

[0113] Figures 5a to 5cThis is a conceptual diagram showing various forms of realizing colors related to a flip-chip semiconductor light-emitting device.

[0114] Reference Figure 5a Each semiconductor light emitting device 150 can be made of gallium nitride (GaN) as a main material and doped with indium (In) and / or aluminum (Al), thereby realizing a high-output light emitting device that emits various lights including blue.

[0115] In this case, to form a sub-pixel, the semiconductor light-emitting devices 150 may be red R, green G, and blue B semiconductor light-emitting devices. For example, red R, green G, and blue B semiconductor light-emitting devices are alternately arranged, and the red (Red), green (Green), and blue (Blue) unit pixels of the red, green, and blue semiconductor light-emitting devices form one pixel, thereby realizing a full-color display.

[0116] Reference Figure 5b , the semiconductor light-emitting device 150a may be provided with white light-emitting devices W each having a yellow phosphor layer. In this case, to constitute a unit pixel, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light-emitting device W. In addition, on such a white light-emitting device W, a unit pixel may be constituted by repeating red, green, and blue color filters.

[0117] Reference Figure 5c The semiconductor light emitting device 150b may also have a structure in which a red phosphor layer 184, a green phosphor layer 185, and a blue phosphor layer 186 are provided on an ultraviolet light emitting device UV. As described above, the semiconductor light emitting device can be used in the entire range from visible light to ultraviolet light UV, and thus can be expanded to a form of semiconductor light emitting device that can use ultraviolet light UV as an excitation source for the upper phosphor.

[0118] Referring again to this example, a semiconductor light emitting device is positioned on the conductive adhesive layer to form a unit pixel in a display device. Since the semiconductor light emitting device has excellent brightness, a single unit pixel can be formed even in a small size.

[0119] For example, the size of a single semiconductor light emitting device 150, 150a, 150b can be a rectangular or square device with a side length of 80 μm or less. If it is a rectangle, the size can be 20×80 μm or less.

[0120] Furthermore, even when the semiconductor light emitting devices 150 , 150 a , and 150 b each having a regular quadrilateral shape and a side length of 10 μm are used as unit pixels, sufficient brightness for constituting a display device can be displayed.

[0121] Therefore, taking the case where the size of a unit pixel is a rectangular pixel with one side being 600 μm and the remaining side being 300 μm as an example, the pitch between the semiconductor light emitting devices 150 , 150 a , and 150 b is relatively large enough.

[0122] Therefore, in such a case, a flexible display device having high image quality equal to or higher than HD can be realized.

[0123] The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Figure 6 , the manufacturing method is described.

[0124] Figure 6 This is a cross-sectional view showing an example of a method for manufacturing a display device using a semiconductor light-emitting device according to the present invention.

[0125] like Figure 6 As shown, first, a conductive adhesive layer 130 is formed on the insulating layer 160 where the auxiliary electrode 170 and the second electrode 140 are located. By stacking the insulating layer 160 on the first substrate 110, a substrate (or wiring substrate) is formed, on which the first electrode 120, the auxiliary electrode 170, and the second electrode 140 are arranged. In this case, the first electrode 120 and the second electrode 140 can be arranged in mutually orthogonal directions. Furthermore, to achieve a flexible display device, the first substrate 110 and the insulating layer 160 can each include glass or polyimide (PI).

[0126] For example, the conductive adhesive layer 130 may be implemented by an anisotropic conductive film. To this end, the anisotropic conductive film may be coated on the substrate where the insulating layer 160 is located.

[0127] Then, the second substrate 112 where the plurality of semiconductor light emitting devices 150 constituting a single pixel are located corresponding to the positions of the auxiliary electrode 170 and the second electrode 140 is arranged so that the semiconductor light emitting devices 150 face the auxiliary electrode 170 and the second electrode 140 .

[0128] In this case, the second substrate 112 serves as a growth substrate for growing the semiconductor light emitting device 150 , and may be a sapphire substrate or a silicon substrate.

[0129] When semiconductor light-emitting devices are formed in wafer units, they have a spacing and size that can be used to form a display device, thereby being effectively used in the display device.

[0130] Then, the wiring substrate and the second substrate 112 are thermocompression bonded. For example, the wiring substrate and the second substrate 112 can be thermocompression bonded using an ACF press head. Through thermocompression bonding, the wiring substrate and the second substrate 112 are bonded. Through thermocompression bonding, due to the characteristics of the conductive anisotropic conductive film, only the portion between the semiconductor light-emitting device 150 and the auxiliary electrode 170 and between the semiconductor light-emitting device 150 and the second electrode 140 has conductivity, thereby electrically connecting the electrodes and the semiconductor light-emitting device 150. At this time, the semiconductor light-emitting device 150 is inserted into the interior of the anisotropic conductive film, thereby forming a partition wall between the semiconductor light-emitting devices 150.

[0131] Then, the second substrate 112 is removed. For example, the second substrate 112 can be removed by using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

[0132] Finally, the semiconductor light emitting device 150 is exposed to the outside by removing the second substrate 112. As needed, silicon oxide (SiO x ) etc. to form a transparent insulating layer (not shown).

[0133] In addition, the process may further include forming a phosphor layer on one side of the semiconductor light-emitting device 150. For example, if the semiconductor light-emitting device 150 is a blue semiconductor light-emitting device that emits blue B light, a red phosphor or a green phosphor for converting the blue B light into the hue of the unit pixel may be formed as a layer on one side of the blue semiconductor light-emitting device.

[0134] The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified in various ways. For example, the display device described above can also be applied to a vertical semiconductor light emitting device.

[0135] In the modifications or embodiments described below, the same or similar components as those in the above-described embodiment are denoted by the same or similar reference numerals, and the above description is used for the description of the same or similar components.

[0136] Figure 7 is a perspective view showing another embodiment of a display device using a semiconductor light emitting device according to the present invention, Figure 8 It is along Figure 7 The cross-sectional view taken along line DD, Figure 9 It shows Figure 8 Conceptual diagram of a vertical semiconductor light-emitting device.

[0137] Referring to this drawing, the display device may be a display device using a vertical semiconductor light emitting device of a passive matrix (PM) method.

[0138] Such a display device includes a substrate 210 , a first electrode 220 , a conductive adhesive layer 230 , a second electrode 240 , and at least one semiconductor light emitting device 250 .

[0139] The substrate 210 is a wiring substrate provided with the first electrode 220 and may include polyimide (PI) to realize a flexible display device. Alternatively, any other insulating and flexible material may be used.

[0140] The first electrode 220 is located on the substrate 210 and may be formed as a bar-shaped electrode elongated in one direction. The first electrode 220 may be configured to function as a data electrode.

[0141] The conductive adhesive layer 230 is formed on the substrate 210 where the first electrode 220 is located. Similar to a display device using a flip-chip light-emitting device, the conductive adhesive layer 230 can be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. However, this embodiment also illustrates the case where the conductive adhesive layer 230 is implemented by an anisotropic conductive film.

[0142] With the first electrode 220 positioned on the substrate 210, an anisotropic conductive film is provided, and then the semiconductor light emitting device 250 is connected by applying heat and pressure, thereby electrically connecting the semiconductor light emitting device 250 to the first electrode 220. At this time, the semiconductor light emitting device 250 is preferably positioned on the first electrode 220.

[0143] As described above, this electrical connection is achieved because, when heat and pressure are applied to the anisotropic conductive film, it becomes partially conductive in the thickness direction. Therefore, the anisotropic conductive film is divided into conductive portions and non-conductive portions in the thickness direction.

[0144] In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 not only realizes the electrical connection between the semiconductor light emitting device 250 and the first electrode 220, but also realizes the mechanical connection.

[0145] As described above, the semiconductor light-emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming a single pixel in the display device. Due to the excellent brightness of the semiconductor light-emitting device 250, even a small-sized device can form a single unit pixel. For example, the size of a single semiconductor light-emitting device 250 can be 80 μm or less on a side, and can be rectangular or square. In the case of a rectangular device, for example, the size can be 20 × 80 μm or less.

[0146] Such a semiconductor light emitting element 250 may form a vertical structure.

[0147] A plurality of second electrodes 240 are provided between the vertical semiconductor light emitting devices. The second electrodes 240 are arranged in a direction intersecting the length direction of the first electrodes 220 and are electrically connected to the vertical semiconductor light emitting devices 250 .

[0148] Reference Figure 9 Such a vertical semiconductor light-emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255, an n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom can be electrically connected to the first electrode 220 via the conductive adhesive layer 230, and the n-type electrode 252 located at the top can be electrically connected to the second electrode 240 described later. Such a vertical semiconductor light-emitting device 250 can have electrodes arranged at the top and bottom, thus having the significant advantage of reducing chip size.

[0149] Refer again Figure 8 A phosphor layer 280 may be formed on one side of the semiconductor light-emitting device 250. For example, if the semiconductor light-emitting device 250 is a blue semiconductor light-emitting device 251 that emits blue B light, a phosphor layer 280 may be provided to convert the blue B light into the hue of a unit pixel. In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 that constitute a single pixel.

[0150] Specifically, a red phosphor 281 capable of converting blue light into red (R) light can be stacked on a blue semiconductor light-emitting device at the location where the red unit pixel is formed. A green phosphor 282 capable of converting blue light into green (G) light can be stacked on a blue semiconductor light-emitting device at the location where the green unit pixel is formed. Alternatively, a blue semiconductor light-emitting device alone can be used at the location where the blue unit pixel is formed. In this case, the red (R), green (G), and blue (B) unit pixels can form a single pixel.

[0151] However, the present invention is not limited thereto. As described above, in a display device using a flip-chip type light-emitting device, other structures for realizing blue, red, and green may be used.

[0152] Referring again to this embodiment, the second electrode 240 is located between the semiconductor light emitting devices 250 and is electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be arranged in a plurality of columns, and the second electrode 240 is located between the columns of the semiconductor light emitting devices 250.

[0153] Since the distance between the semiconductor light emitting devices 250 constituting a single pixel is sufficiently large, the second electrode 240 may be located between the semiconductor light emitting devices 250 .

[0154] The second electrode 240 may be formed as a long bar-shaped electrode that is long in one direction, and may be arranged in a direction perpendicular to the first electrode.

[0155] In addition, the second electrode 240 and the semiconductor light-emitting device 250 can be electrically connected via a connecting electrode protruding from the second electrode 240. More specifically, the connecting electrode can be an n-type electrode of the semiconductor light-emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode 240 covers at least a portion of the ohmic electrode by printing or evaporation. In this way, the second electrode 240 and the n-type electrode of the semiconductor light-emitting device 250 can be electrically connected.

[0156] Refer again Figure 8 The second electrode 240 may be located on the conductive adhesive layer 230. According to circumstances, a layer containing silicon oxide (SiO x ) or a transparent insulating layer (not shown). If the second electrode 240 is to be provided after the transparent insulating layer is formed, the second electrode 240 can be located on the transparent insulating layer. Alternatively, the second electrode 240 can be formed separately from the conductive adhesive layer 230 or the transparent insulating layer.

[0157] If a transparent electrode such as ITO (Indium Tin Oxide) is used to position the second electrode 240 above the semiconductor light-emitting device 250, poor adhesion between the ITO material and the n-type semiconductor layer is a problem. Therefore, in the present invention, the second electrode 240 is positioned between the semiconductor light-emitting devices 250, eliminating the need for a transparent electrode such as ITO. This eliminates the need for transparent materials and allows the use of conductive materials with good adhesion to the n-type semiconductor layer as the horizontal electrode, thereby improving light extraction efficiency.

[0158] Refer again Figure 8 , partition walls 290 may be located between the semiconductor light-emitting devices 250. Specifically, partition walls 290 may be disposed between the vertical semiconductor light-emitting devices 250 to separate the semiconductor light-emitting devices 250 that constitute individual pixels. In this case, the partition walls 290 may function to separate the individual unit pixels from each other and may be integrally formed with the conductive adhesive layer 230. For example, the semiconductor light-emitting devices 250 may be inserted into an anisotropic conductive film, with the base member of the anisotropic conductive film forming the partition walls 290.

[0159] In addition, if the base member of the anisotropic conductive film is black, the partition wall 290 can increase the contrast while having a reflective property even without an additional black insulator.

[0160] As another example, an additional reflective partition wall may be provided as the partition wall 290. The partition wall 290 may include a black or white insulator according to the purpose of the display device.

[0161] If the second electrode 240 is located on the conductive adhesive layer 230 between the semiconductor light-emitting devices 250, the partition wall 290 can be located between the vertical semiconductor light-emitting devices 250 and the second electrode 240. Therefore, a single unit pixel can be formed with a small size using the semiconductor light-emitting devices 250. Since the spacing between the semiconductor light-emitting devices 250 is relatively wide enough, the second electrode 240 can be located between the semiconductor light-emitting devices 250, which has the effect of realizing a flexible display device with HD image quality.

[0162] In addition, if Figure 8 As shown, in order to improve contrast, a black matrix 291 can be disposed between each phosphor. In other words, the black matrix 291 can improve the contrast between light and dark.

[0163] In the display device using the semiconductor light emitting device of the present invention described above, the semiconductor light emitting device is arranged on the wiring substrate in a flip-chip type so as to function as a single pixel.

[0164] Figure 10 FIG. 1 is a top view showing a display device using a semiconductor light emitting device according to an embodiment of the present invention. Figure 11 FIG. 1 is a schematic top view illustrating stress separation lines of a display device using a semiconductor light emitting device according to an embodiment of the present invention.

[0165] Reference Figure 10 and Figure 11The display device 300 may include a pixel region 301 and a pad region surrounding the pixel region. The pixel region 301 and the pad region may be set on a substrate 310.

[0166] As an example, Figure 10 and Figure 11 The display device 300 shown in FIG. 3 may be a portion of the entire display device. For example, Figure 10 and Figure 11 The display device 300 shown in FIG. 3 may be a module of a display device in which a plurality of modules are combined to form the entire display device.

[0167] A plurality of unit pixel regions may be provided within the pixel region 301. A pad region located around the pixel region 301 may include a pad 410, a driver chip 400, and a connection wiring 420. The pad 410 is located on the frame side of the pixel region 301, and the connection wiring 420 connects the pad 410 and the driver chip 400.

[0168] The substrate 310 may have a rectangular shape defined by long and short sides. Figure 10 , the long side H can be the height direction, and the short side W can be the width direction. In this case, the driver chip 400 can be arranged along the long side H at a predetermined distance from the frame side of the pixel area 301. That is, the driver chip 400 can be arranged parallel to the long side H.

[0169] The length of the driving chip 400 may be smaller than the length (long side; H) of the pixel region 301. Therefore, the connection pads 410 and the connection wiring 420 of the driving chip 400 may be arranged to be inclined relative to the short side W.

[0170] On such a substrate 310, a partition wall layer 360 (see FIG. 3 ) defining a plurality of unit pixel regions within the pixel region 301 may be provided. Figure 13 and Figure 14 That is, the partition wall layer 360 may define a plurality of unit pixel regions (assembly holes; formed at locations where the semiconductor light emitting devices are assembled), and such unit pixel regions may be located within the pixel region 301 .

[0171] The unit pixel regions (assembly holes) can be arranged at predetermined intervals in the pixel region 301 (see Figure 13 and Figure 14 ). Therefore, the plurality of unit pixel regions located within the pixel region 301 can form a plurality of lines along the long side H on the substrate 310. Alternatively, such a plurality of unit pixel regions can also form a plurality of lines along the short side W. In this case, the plurality of unit pixel regions formed along each line can be arranged at predetermined intervals.

[0172] On such a partition wall layer 360, stress separation lines 390 located between unit pixel areas can be formed. Such stress separation lines 390 can be located between each pixel. In addition, they can also be set at set intervals between pixel lines of a plurality of lines. For example, a stress separation line 390 is set for every two pixel lines. However, the present invention is not limited to this. As described above, the stress separation line 390 can be formed in a direction that crosses the pixel line. Below, with reference to the accompanying drawings, the relationship between such stress separation lines 390 and pixels is explained.

[0173] Hereinafter, the stress separation line 390 will be described in detail.

[0174] As described above, the substrate 310 has a rectangular shape defined by the long side H and the short side W, and the stress separation line 390 may be formed in a direction parallel to the short side direction W.

[0175] In addition, the stress separation line 390 may be formed continuously with respect to the short side direction W. That is, the stress separation line 390 may be formed across the entire width W of the substrate 310 .

[0176] A plurality of stress separation lines 390 may be formed in a direction parallel to the short side direction W. Figure 10 and Figure 11 , shows an embodiment in which the stress separation lines 390 are centered on the center line C that crosses the substrate, with two stress separation lines 390 formed on the upper side and two on the lower side.

[0177] Such a plurality of stress separation lines 390 may be formed symmetrically with respect to a line (center line; C) passing through the center of the substrate 310. Figure 10 and Figure 11 It can be seen that the stress separation lines 390 , two of which are formed on the upper side and two on the lower side, are symmetrical with respect to the center line C that crosses the substrate.

[0178] Furthermore, such a plurality of stress separation lines 390 may be formed at predetermined intervals relative to a center line C that passes through the center of the substrate 310. For example, of the stress separation lines 390 formed on the upper side and on the lower side with respect to the center line C that passes through the substrate, the two upper stress separation lines 390 and the two lower stress separation lines 390 may be formed at predetermined intervals.

[0179] Reference Figure 10 and Figure 11 , the stress separation line 390 may include a compensation line 392 inclined with respect to the short side direction W in the pad region.

[0180] The pad area may include a first area c and a second area a. The first area c is provided with a connection wiring 420 connected to the pixel area 301 and the driver chip 400. The second area a is located outside the driver chip 400. Figure 11 In FIG. 3 , the pixel area 301 is marked as “b” relative to the short side W.

[0181] The compensation line 392 may be located in the first region c where the connection wiring 420 is disposed.

[0182] The inclination of the compensation line 392 may be set so that the compensation line 392 intersects with a radial direction from the center of the substrate 310 .

[0183] As an example, the inclination of the compensation line 392 may be set to be perpendicular to the radial direction from the center of the substrate 310 .

[0184] Therefore, the stress separation line 390 including such a compensation line 392 can effectively block stress that may be generated when the partition wall layer 360 is thermally cured or cooled.

[0185] The stress separation line 390 may include a first line 391 located in the pixel region 301. In addition, the stress separation line 390 may include an extension line 393 connected to the compensation line 392 and formed in a parallel direction with respect to the short side W direction.

[0186] The stress separation line 390 described above can separate the transmission of stress caused by the difference in thermal expansion coefficient between the partition wall layer 360 and the substrate 310. This will be described in detail below with reference to the accompanying drawings.

[0187] Figure 12 This is a schematic plan view showing an example of stress separation lines in a display device using a semiconductor light emitting device according to an embodiment of the present invention. Figure 13 FIG. 1 is a schematic plan view showing another example of stress separation lines in a display device using a semiconductor light emitting device according to an embodiment of the present invention.

[0188] As described above, stress separation lines 390 located between unit pixel regions may be formed on the partition wall layer 360. Such stress separation lines 390 may be provided between each pixel.

[0189] Reference Figure 12 The unit pixel regions defined by the pair of first electrodes 320 may be spaced apart at a predetermined interval, and a stress separation line 390 may be formed between the unit pixel regions.

[0190] Such a stress separation line 390 may be located at the center of adjacent unit pixel regions, that is, the stress separation line 390 may be provided at the center portion of a pair of adjacent first electrodes 320 .

[0191] Reference Figure 12 The stress separation line 390 may be formed in a form where the partition wall layer 360 is cut. In other words, the stress separation line 390 may be formed in a form of a groove that is located on the partition wall layer 360 and completely separates the partition wall layers 360 from each other.

[0192] When the partition wall layer 360 is formed on the substrate 310, due to the stress generated by the difference in thermal expansion coefficient between the partition wall layer 360 and the substrate 310, the structure forming the substrate 310 and the partition wall layer 360 may bend, or the position of the assembly hole formed in the unit pixel area may be changed.

[0193] However, the stress separation line 390 provided between the unit pixel regions defined by the pair of first electrodes 320 can prevent phenomena caused by stress generated by the difference in thermal expansion coefficients between the partition wall layer 360 and the substrate 310. For example, the stress separation line 390 can prevent the structure formed by the substrate 310 and the partition wall layer 360 from warping or the position of the assembly hole formed in the unit pixel region from changing.

[0194] At this time, the compensation line 392 included in the stress separation line 390 can actually effectively block the stress acting in a radial direction from the center of the substrate 310 .

[0195] As described above, the stress separation line 390 including the compensation line 392 can effectively block stress that may be generated during thermal curing or cooling of the partition wall layer 360 .

[0196] Reference Figure 13 , the stress separation line 390 may be formed in a form where the partition wall layer 360 is partially cut. In other words, the stress separation line 390 may be formed in the form of a groove located on the partition wall layer 360 and partially separating the partition wall layers 360 from each other. In other words, the stress separation line 390 may be formed in the form of a groove formed in a portion of the thickness of the partition wall layer 360.

[0197] Although Figure 12 and Figure 13 , the embodiment in which a stress separation line 390 is provided between each adjacent unit pixel region is shown, but the present invention is not limited to such an embodiment. That is, the stress separation line 390 can be formed at a predetermined interval between adjacent unit pixel regions.

[0198] Figure 14 FIG. 1 is a cross-sectional view showing a unit pixel region of a display device using a semiconductor light emitting device according to an embodiment of the present invention.

[0199] Reference Figure 14A first electrode 320 may be provided in the unit pixel region. A semiconductor light-emitting device 350 may be mounted on the first electrode 320. The semiconductor light-emitting device 350 is electrically connected to a first-type electrode (for example, an n-type electrode). The first electrode 320 may also be formed to form a pair with an assembly electrode 340. At least one of the first electrode 320 and the assembly electrode 340 may be covered by a coating layer 330.

[0200] A coating layer 370 may be provided on the semiconductor light emitting device 350 and the partition wall layer 360 . A second electrode 380 electrically connected to the second-type electrode (for example, a p-type electrode) of the semiconductor light emitting device 350 may be provided on the coating layer 370 .

[0201] On the other hand, although the above description describes an example in which the stress separation line 390 is formed in the partition wall layer 360, the stress separation line 390 may be formed in any layer provided on the substrate 310 and having different thermal expansion coefficients. That is, for example, the stress separation line 390 may be formed in at least one of the coating layer 330, the partition wall layer 360, and the coating layer 370 formed on the substrate 310.

[0202] Figure 15 This is a schematic plan view showing stress applied to a display device to which the present invention can be applied. Figure 16 This is a schematic cross-sectional view illustrating the generation of stress and the resulting phenomenon in a display device to which the present invention can be applied.

[0203] Reference Figure 15 , the display device can generate stress in the direction indicated by the arrow according to the position. As described above, such stress can be generated due to the difference in thermal expansion coefficient between the partition wall layer and the substrate. As an example, when the partition wall layer is formed on the substrate, thermal expansion occurs, and then when cooled, the thermal expansion shrinks and generates stress between the substrate and the partition wall layer. As another example, after the partition wall layer is formed by an organic film, stress may be generated during the thermal curing process.

[0204] Generally, the partition wall layer 360 has greater thermal expansion than the substrate 310 made of glass or the like, and thus stress may be generated between the substrate 310 and the partition wall layer 360. The direction of such stress is the same as that indicated by the thick arrow in a single module, and is generally directed toward the center of the display device as indicated by the thin arrow.

[0205] Reference Figure 16In (A), the state in which the electrode 32 and the partition wall layer 36 are formed on the substrate 31 is set on the fixture or the lower cover 50. In this state, the installation space (pattern) can be formed by the slit 40 and the exposure process at the position for installing the light-emitting device.

[0206] Then, refer to Figure 16 Step (B) in the figure may constitute a curing step for the partition wall layer 36. This curing step may typically include a thermal curing step or a UV curing step. Since the above-described process is a high-temperature step, the partition wall layer 36 may expand. As a result, the mounting space (pattern) formed at the location where the light-emitting device is mounted may shift.

[0207] Therefore, a phenomenon may occur in which the pattern (assembly hole pattern) indicating the mounting position formed in the partition wall layer 36 according to the position of the display device is inconsistent with the unit pixel area actually defined by the electrode 32. In other words, the unit pixel area defined by the electrode 32 and the pattern of the pixel area formed in the partition wall layer 36 may be inconsistent.

[0208] As described above, in the panel process of the display device, after forming the metal wiring electrode for mounting the light-emitting device (chip transfer), when forming the partition wall layer, the wiring (first electrode) and the assembly hole may be patterned at the outer contour position due to the bending of the substrate.

[0209] The degree of patterning error may increase as the display device moves farther from its center toward its periphery. Specifically, the degree of error in the direction radially from the center of the substrate may increase. In other words, the effect of stress in the direction radially from the center of the substrate may increase.

[0210] Figure 17 This is a schematic plan view showing the movement direction of a pattern according to a curing step in a display device to which the present invention can be applied. Figure 18 It shows Figure 17 The various parts of the photograph produce a phenomenon according to the movement of the pattern.

[0211] The display device can be divided into a plurality of areas (groups), and such a plurality of areas can also correspond to a module of the modular display as described above.

[0212] Figure 17 The display device is divided into 25 regions in total. In this case, the pattern position in the central region ① of group 13 is likely to remain unchanged. In other words, the pattern of the unit pixel region defined by electrode 32 and the pixel region formed on partition wall layer 36 is unlikely to differ.

[0213] However, the pattern shift may increase as it moves further from the center. For example, the pattern shift may increase at position ②, which is closer to group 1, position ③, which is closer to group 5, position ④, which is closer to group 21, and position ⑤, which is closer to group 25, on the display device.

[0214] Figure 18 The photographs show the occurrence of such pattern movement. Figure 18 (A) shows a photo in the position of ②, (B) shows a photo in the position of ①, (C) shows a photo in the position of ③, (D) shows a photo in the position of ④, and (E) shows a photo in the position of ⑤.

[0215] Reference Figure 18 As can be seen from the image (B) in position ①, the pattern and the unit pixel area are consistent. However, in (A), (C), (D), and (E), the pattern and the unit pixel area are inconsistent. This inconsistency may be caused by the pattern shift of the partition wall layer 36 during the curing process as described above. In other words, it may be caused by the difference in thermal expansion coefficient between the substrate 31 and the partition wall layer 36.

[0216] This misalignment between the pattern and the unit pixel area can be exacerbated by the various alignment steps used during display device manufacturing, which may utilize various masks. This can lead to cumulative errors caused by alignment tolerances across various steps. Therefore, preventing this pattern shift is beneficial during display device manufacturing.

[0217] Figure 19 This is a graph showing changes in the thermal expansion coefficient of an organic film as a material for a partition wall layer that can be applied to one embodiment of the present invention.

[0218] The coating layers of the display device 300, including the partition wall layer 360, can be formed using an organic film. Such an organic film is first formed on the substrate 310, and then subjected to a patterning process and cured by heat or ultraviolet light.

[0219] Reference Figure 19 , showing the degree of expansion of the organic film according to the temperature. In addition, it is known that the coefficient of thermal expansion (CTE) of the organic film changes at the glass transition temperature (glass transition temperature; (Tg)).

[0220] That is, it is known that when an organic film is heated, it solidifies like a glass film at a temperature above the glass transition temperature (Tg), and at this time, the thermal expansion coefficient at the glass transition temperature (Tg) changes.

[0221] Therefore, after forming the partition wall layer 360 using an organic film, a pattern is formed at the position where the light emitting device is mounted in the unit pixel region. Then, during the thermal curing process, stress is generated as the thermal expansion coefficient changes, and the pattern may move as described above.

[0222] However, the stress separation line 390 as described above can block such a change in thermal expansion coefficient or stress caused by the difference in thermal expansion coefficient from the substrate 310. Therefore, the pattern formed at the position where the light emitting device is mounted can be formed at an accurate position without moving during the thermal curing process or the cooling process.

[0223] Figure 20 1 is a schematic cross-sectional view illustrating a process of forming a partition wall layer in a display device using a semiconductor light emitting device according to an embodiment.

[0224] First, refer to Figure 20 In (A), the partition wall layer 360 may be formed on the substrate 310 using an organic film.

[0225] Then, refer to Figure 20 In (B), a stress separation line 390 may be formed in the partition wall layer 360 formed on the substrate 310 .

[0226] At this time, although not shown separately, a pattern for mounting a light-emitting device may be formed on the partition wall layer 360. Such a pattern and the stress separation line 390 may also be formed simultaneously. During this process, the substrate 310 and the partition wall layer 360 may be bent as a whole.

[0227] Then, refer to Figure 20 In step (C), after the partition wall layer 360 is cured, the substrate 310 and the partition wall layer 360 can be restored to a flat state. During this process, the stress separation lines 390 can separate or disperse stress during the curing of the partition wall layer 360. Therefore, stress is prevented from being applied to the pattern for mounting the light-emitting device.

[0228] As described above, the direction of stress generated during the panel process is the same as the direction indicated by the thick arrow in a single module, and is directed toward the center of the display device as a whole as indicated by the thin arrow.

[0229] Therefore, in practice, the stress separation line 390 including the compensation line 392 can effectively block the stress acting in the radial direction from the center of the substrate 310 .

[0230] As described above, the stress separation line 390 including the compensation line 392 can effectively block stress that may be generated during thermal curing or cooling of the partition wall layer 360 .

[0231] Figure 21 This is a schematic diagram showing an actual implementation example of a display device using a semiconductor light-emitting device according to an embodiment. Figure 22 It shows Figure 21 Photos of the (1) area. Figure 23 It shows Figure 21 Photos of the (5) area. Figure 24 It shows Figure 21 Photos of the (9) area.

[0232] Reference Figure 21 , pixel areas are shown as numbers 1 to 9. The remaining areas show at least a portion of the aforementioned pad area.

[0233] The implementation example of such a display device shows a case where the pixel area of ​​the display device is divided into nine areas. These nine areas can also be composed of nine unit modules.

[0234] Although not in Figure 21 shown in Figures 22 to 24 3 shows the state of each region when the stress separation line 390 is formed.

[0235] Reference Figures 22 to 24 , we can know that, with the above Figure 18 Unlike the case of FIG. 1 , in all areas including area ①, area ⑤, and area ⑨, each unit pixel area is not biased to one side but is formed at an accurate position.

[0236] As described above, the stress separation lines 390 located between the unit pixel regions (assembly holes) of the display device can prevent the phenomenon caused by the stress generated by the difference in thermal expansion coefficient between the partition wall layer 360 and the substrate 310 .

[0237] For example, the stress separation line 390 can prevent the structure formed by the substrate 310 and the partition wall layer 360 from being bent or the position of the assembly hole formed in the unit pixel region from being changed.

[0238] At this time, the compensation line 392 included in the stress separation line 390 can actually and effectively block the stress acting in a radial direction from the center of the substrate 310 .

[0239] As described above, the stress separation line 390 including the compensation line 392 can effectively block stress that may be generated during thermal curing or cooling of the partition wall layer 360 .

[0240] The above description is only for the purpose of illustrating the technical concept of the present invention. A person skilled in the art to which the present invention pertains may make various modifications and variations without departing from the essential characteristics of the present invention.

[0241] Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of ​​the present invention but to explain the technical idea, and the scope of the technical idea of ​​the present invention is not limited by these embodiments.

[0242] The protection scope of the present invention should be interpreted by the appended claims, and all technical ideas within the scope equivalent thereto should be interpreted as being included in the right scope of the present invention.

[0243] Industrial Applicability

[0244] According to the present invention, a display device using a semiconductor light emitting device such as a micro LED and a method of manufacturing the same can be provided.

Claims

1. A display device using a semiconductor light emitting device, characterized in that: include: A substrate comprising a pixel area and a pad area located around the pixel area; a partition wall layer, located on the substrate, defining a plurality of unit pixel regions within the pixel region; a stress separation line located between the unit pixel regions on the partition wall layer; A first electrode is located in the unit pixel area; a semiconductor light emitting device, arranged in the unit pixel region so that the first-type electrode is electrically connected to the first electrode; a coating layer formed on the semiconductor light emitting device and the partition wall layer; as well as a second electrode electrically connected to the second-type electrode of the semiconductor light-emitting device on the coating layer; The stress separation line extends from one side of the substrate to the other side of the substrate, The stress separation line includes a compensation line, and the compensation line is inclined relative to the short side direction of the substrate in the pad area. The compensation line blocks the stress acting in the radial direction from the center of the substrate. The stress separation lines are formed in the form of grooves located on the partition wall layers and partially separating the partition wall layers from each other.

2. The display device using the light emitting device according to claim 1, wherein: The substrate has a rectangular shape defined by long sides and short sides, and the stress separation lines are formed in the pixel region in a direction parallel to the short sides.

3. The display device using a semiconductor light emitting device according to claim 2, wherein: The stress separation line is formed continuously in the short side direction.

4. The display device using a semiconductor light emitting device according to claim 2, wherein: A plurality of stress separation lines are formed in a direction parallel to the short side direction.

5. The display device using a semiconductor light emitting device according to claim 4, characterized in that: The plurality of stress separation lines are formed symmetrically with respect to a line passing through the center of the substrate and parallel to the long side of the substrate.

6. The display device using a semiconductor light emitting device according to claim 1, wherein: The pad area includes a first area and a second area. The connection wiring connecting the pixel area and the driver chip is located in the first area, and the second area is located outside the driver chip.

7. The display device using a semiconductor light emitting device according to claim 6, wherein: The compensation line is inclined with respect to the short side direction in the first region.

8. The display device using a semiconductor light emitting device according to claim 7, wherein: The stress separation line includes an extension line connected to the compensation line at a side away from the pixel area and formed in a direction parallel to the short side direction.

9. The display device using a semiconductor light emitting device according to claim 1, wherein: The stress separation line separates transmission of at least one of stress generated due to a difference in thermal expansion coefficient between the partition wall layer and the substrate and stress generated when the partition wall layer is thermally cured.

10. A display device using a semiconductor light emitting device, characterized in that: include: A substrate having a rectangular shape defined by a long side and a short side, comprising a pixel area and a pad area located around the pixel area; a partition wall layer, located on the substrate, defining a plurality of unit pixel regions within the pixel region; a stress separation line located between the unit pixel regions on the partition wall layer; as well as A semiconductor light emitting device is disposed in the unit pixel area; The stress separation line has different inclinations in the pixel region and the pad region. The stress separation line extends from one side of the substrate to the other side of the substrate, The stress separation line includes a compensation line, and the compensation line is inclined relative to the short side direction of the substrate in the pad area. The compensation line blocks the stress acting in the radial direction from the center of the substrate. The stress separation lines are formed in the form of grooves located on the partition wall layers and partially separating the partition wall layers from each other.

11. The display device using a semiconductor light emitting device according to claim 10, wherein: The stress separation line is formed continuously in the short side direction.

12. The display device using a semiconductor light emitting device according to claim 10, wherein: A plurality of stress separation lines are formed in a direction parallel to the short side direction.

13. The display device using a semiconductor light emitting device according to claim 12, wherein: The plurality of stress separation lines are formed symmetrically with respect to a line passing through the center of the substrate and parallel to the long side of the substrate.

14. The display device using a semiconductor light emitting device according to claim 10, wherein: The pad area includes a first area and a second area. The connection wiring connecting the pixel area and the driver chip is located in the first area, and the second area is located outside the driver chip.

15. The display device using a semiconductor light emitting device according to claim 14, wherein: The compensation line is inclined with respect to the short side direction in the first region.

16. The display device using a semiconductor light emitting device according to claim 15, wherein: The stress separation line includes an extension line connected to the compensation line at a side away from the pixel area and formed in a direction parallel to the short side direction.

17. The display device using a semiconductor light emitting device according to claim 10, wherein: The stress separation line separates transmission of at least one of stress generated due to a difference in thermal expansion coefficient between the partition wall layer and the substrate and stress generated when the partition wall layer is thermally cured.

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