Carbon nanotube composition, catalyst for carbon nanotube production, method for producing carbon nanotube, and carbon nanotube
By using Ni and Sn or Sb alloy particle catalysts, and heating the carbon supply source in the presence of the catalyst, high-purity and highly uniform semiconducting carbon nanotubes are generated, solving the problems of uneven and unstable generation in existing technologies. This method is suitable for applications such as transistors and sensors.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TOHOKU UNIV
- Filing Date
- 2022-09-27
- Publication Date
- 2026-06-09
AI Technical Summary
Existing technologies struggle to generate carbon nanotubes with both semiconductor and chiral properties, and existing methods cannot guarantee stable yield and quality.
Using alloy particles containing Ni and Sn or Sb as catalysts, carbon supply sources are heated in the presence of the catalysts to generate carbon nanotubes via chemical vapor deposition. The specific steps include preparation and generation processes, and an annealing process can be selected to adjust the chiral properties.
The generated carbon nanotubes exhibit high uniformity and purity, making them suitable for transistors, sensors, and coated semiconductor materials.
Smart Images
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Abstract
Claims
1. A carbon nanotube composition comprising a metal and carbon nanotubes, The metal comprises alloy particles containing any one of Ni-Sn, Ni-Sn-Fe, Ni-Sb, and Ni-Sn-Fe containing Ni3Sn. The carbon nanotubes are single-walled and have semiconductor properties of any one of (6, 5) chiral carbon nanotubes, (8, 7) chiral carbon nanotubes, and (7, 5) chiral carbon nanotubes.
2. The carbon nanotube composition according to claim 1, wherein, At least one end of the carbon nanotube is attached to the surface of the particle.
3. The carbon nanotube composition according to claim 1 or 2, wherein, The carbon nanotube composition contains more than 1 ppm by mass of Ni, more than 1 ppm by mass of Sn, and one or more of Sb.
4. The carbon nanotube composition according to claim 1 or 2, wherein, The purity of the (6, 5) chiral carbon nanotubes is above 60%.
5. The carbon nanotube composition according to claim 1 or 2, wherein, The purity of the (8, 7) chiral carbon nanotubes is above 60%.
6. The carbon nanotube composition according to claim 1 or 2, wherein, The purity of the (7, 5) chiral carbon nanotubes is above 60%.
7. A catalyst for manufacturing carbon nanotubes, said catalyst comprising alloy particles containing any one of Ni-Sn, Ni-Sn-Fe, Ni-Sb, and Ni-Sn-Fe containing Ni3Sn. The carbon nanotubes are any of the following: (6, 5) chiral carbon nanotubes, (8, 7) chiral carbon nanotubes, and (7, 5) chiral carbon nanotubes.
8. The catalyst for manufacturing carbon nanotubes according to claim 7, wherein, The content of Ni in the alloy particles is in the range of 0.5 parts by mass or more and 10.0 parts by mass or less per part by mass relative to the total content of Sn and Sb.
9. The catalyst for manufacturing carbon nanotubes according to claim 7 or 8, wherein, The alloy particles also contain Fe.
10. The catalyst for manufacturing carbon nanotubes according to claim 9, wherein, The Fe content of the alloy particles is in the range of 0.1 parts by mass or more and 5.0 parts by mass or less per part by mass relative to the total content of Sn and Sb.
11. The catalyst for manufacturing carbon nanotubes according to claim 7 or 8, wherein, The alloy particles are supported on porous particles.
12. A method for manufacturing carbon nanotubes, the method comprising: The preparation process involves preparing a catalyst containing alloy particles, wherein the alloy particles contain any one of Ni-Sn, Ni-Sn-Fe, Ni-Sb, and Ni-Sn-Fe containing Ni3Sn; and In the generation process, a carbon supply source is heated in the presence of the catalyst to generate any one of (6, 5) chiral carbon nanotubes, (8, 7) chiral carbon nanotubes, and (7, 5) chiral carbon nanotubes.
13. The method for manufacturing carbon nanotubes according to claim 12, wherein, In the production process, the heating temperature when heating the carbon supply source in the presence of a catalyst is below 650°C.
14. The method for manufacturing carbon nanotubes according to claim 12, wherein, In the production process, the heating temperature when heating the carbon supply source in the presence of a catalyst is above 700°C and below 750°C.
15. The method for manufacturing carbon nanotubes according to claim 12, wherein, The process includes an annealing step after the preparation step and before the generation step, wherein the carbon supply source is annealed in the presence of the catalyst.
16. The method for manufacturing carbon nanotubes according to claim 12, wherein, In the generation process, the carbon supply source is a carbon-containing gas, which is plasma-enhanced and brought into contact with the catalyst.
17. The method for manufacturing carbon nanotubes according to claim 12, wherein, In the generation process, the carbon supply source is heated in the presence of porous particles carrying the catalyst to generate carbon nanotubes.