Patterned vanadium-doped molybdenum disulfide nanosheet array, preparation method thereof and device

Abstract

The application relates to a patterned vanadium-doped molybdenum disulfide nanosheet array and a preparation method and a device thereof, the method comprising the following steps: obtaining a first substrate, the surface of the first substrate being provided with a patterned metal vanadium film; performing oxygen plasma treatment on the first substrate, so that the metal vanadium film is converted into a vanadium oxide film, and the wettability of the first substrate is enhanced, thereby obtaining a second substrate; coating a molybdenum source on the surface of the second substrate, thereby obtaining a third substrate; and performing chemical vapor deposition reaction on the third substrate and sulfur powder, thereby obtaining the patterned vanadium-doped molybdenum disulfide nanosheet array. The application solves the technical problem that the existing molybdenum disulfide is difficult to realize the regulation of a majority of carrier types.

Description

Technical Field

[0001] This application relates to the field of nanomaterials technology, and in particular to a patterned vanadium-doped molybdenum disulfide nanosheet array and its preparation method and device. Background Technology

[0002] Molybdenum disulfide (MoS2) is considered an ideal channel material for electronic and optoelectronic devices due to its monolayer direct bandgap, high carrier mobility, and environmental stability. However, the inherent n-type conductivity of molybdenum disulfide limits its diverse applications. To achieve its integration with modern electronic and optoelectronic technologies, it is necessary to realize a controllable majority carrier type and device polarity (n-type or p-type).

[0003] In recent years, much work has been done to control the electronic structure and carrier concentration of MoS2, and substitution doping has proven to be one of the more stable and efficient methods. However, existing synthesis and doping methods are complex and have limited control over the spatial position and size of the material, making them unsuitable for scalable electronic and optoelectronic integration. Summary of the Invention

[0004] This application provides a patterned vanadium-doped molybdenum disulfide nanosheet array and its preparation method and device, in order to solve the technical problem that existing molybdenum disulfide is difficult to control the majority carrier type.

[0005] In a first aspect, this application provides a method for preparing a patterned vanadium-doped molybdenum disulfide nanosheet array, the method comprising:

[0006] A first substrate is obtained, the surface of which has a patterned vanadium metal film.

[0007] The first substrate is subjected to oxygen plasma treatment to transform the vanadium metal film into a vanadium oxide film and to enhance the wettability of the first substrate, thereby obtaining a second substrate.

[0008] A molybdenum source is coated onto the surface of the second substrate to obtain a third substrate;

[0009] The third substrate was subjected to a chemical vapor deposition reaction with sulfur powder to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array.

[0010] Optionally, the power of the oxygen plasma treatment is 50W to 60W.

[0011] Optionally, the molybdenum source includes one of the following: sodium molybdate or ammonium molybdate.

[0012] Optionally, the substrate may include one of the following: silicon wafer or sapphire.

[0013] Optionally, obtaining the first substrate, wherein the surface of the first substrate has a patterned vanadium metal film, includes:

[0014] A custom mask of the same size is attached to the substrate surface, and then thermal evaporation is performed under vacuum conditions to deposit a patterned vanadium metal film on the substrate surface, thus obtaining the first substrate.

[0015] Optionally, the third substrate is subjected to a chemical vapor deposition reaction with sulfur powder to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array, comprising:

[0016] The third substrate and sulfur powder are placed in different temperature zones of heat treatment, and the spacing between the third substrate and the sulfur powder is set to perform a chemical vapor deposition reaction to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array.

[0017] Optionally, placing the third substrate and sulfur powder in different temperature zones of heat treatment, and setting the spacing between the third substrate and the sulfur powder, to perform a chemical vapor deposition reaction to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array, includes:

[0018] The third substrate is placed in a third temperature zone, and the sulfur powder is placed in a first temperature zone. The third temperature zone is separated from the first temperature zone by a second temperature zone, and the distance between the third substrate and the sulfur powder is set to 40-50 cm for chemical vapor deposition to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array; wherein,

[0019] The temperature of the first temperature zone is 180-200℃, the temperature of the second temperature zone is 350-500℃, and the temperature of the third temperature zone is 750-800℃.

[0020] Optionally, the temperature in the third temperature zone is maintained for 8 to 10 minutes.

[0021] In a second aspect, this application provides a patterned vanadium-doped molybdenum disulfide nanosheet array, which is prepared by the method described in any embodiment of the first aspect.

[0022] Thirdly, this application provides a device comprising the patterned vanadium-doped molybdenum disulfide nanosheet array described in any embodiment of the second aspect.

[0023] The technical solutions provided in this application have the following advantages compared with the prior art:

[0024] The method for preparing the patterned vanadium-doped molybdenum disulfide nanosheet array provided in this application embodiment involves a patterned vanadium film on the surface of a first substrate. Using the patterned vanadium film as a dopant source, the vanadium film is transformed into a vanadium oxide film through oxygen plasma treatment, effectively improving the wettability between the molybdenum source and the first substrate. After coating the molybdenum source, a chemical vapor deposition reaction is performed with sulfur powder to obtain the patterned vanadium-doped molybdenum disulfide nanosheet array. The preparation process is simple, and the patterning makes the material more suitable for electronic and optoelectronic integration. It achieves the substitution doping of molybdenum disulfide by the transition element vanadium, and realizes a controllable majority carrier type (by doping molybdenum disulfide with vanadium, the majority carrier type changes from electrons to holes). Attached Figure Description

[0025] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0026] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a simplified flowchart illustrating a method for preparing a patterned vanadium-doped molybdenum disulfide nanosheet array according to an embodiment of this application.

[0028] Figure 2 This is a detailed flowchart illustrating a method for preparing a patterned vanadium-doped molybdenum disulfide nanosheet array according to an embodiment of this application.

[0029] Figure 3 This is an optical photograph of a patterned vanadium-doped molybdenum disulfide nanosheet array according to an embodiment of this application; wherein, Figure 3 a-Example 1; Figure 3 b-Example 2;

[0030] Figure 4 Raman spectra of the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide of Comparative Example 1.

[0031] Figure 5 The photoluminescence spectra of the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide of Comparative Example 1 are shown below.

[0032] Figure 6 XPS data images of the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide in Comparative Example 1, showing the elemental molybdenum (Mo) content.

[0033] Figure 7 XPS data images of S element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide of Comparative Example 1 are shown.

[0034] Figure 8 This is an XPS data image of the V element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application;

[0035] Figure 9 This is a low-magnification TEM image of the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application;

[0036] Figure 10 This is a TEM-ED Selemental mapping image of Mo in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application;

[0037] Figure 11 This is a TEM-ED Selemental mapping image of the S element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application;

[0038] Figure 12 This is a TEM-ED Selemental mapping image of the V element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application;

[0039] Figure 13 The following are the EDS energy spectra and elemental contents of each element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application;

[0040] Figure 14 The transfer curves are those of the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide field-effect transistor of Comparative Example 1. Detailed Implementation

[0041] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0042] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0043] In this application, unless otherwise stated, directional terms such as "upper" and "lower" specifically refer to the drawing directions in the accompanying drawings. Furthermore, in the description of this application, terms such as "comprising" and "including" mean "including but not limited to." In this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. In this document, "and / or" describes the relationship between related objects, indicating that three relationships can exist; for example, A and / or B can represent: A alone, A and B simultaneously, or B alone. A and B can be singular or plural. In this document, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be a single or multiple.

[0044] Unless otherwise specified, all raw materials, reagents, instruments and equipment used in this application can be purchased from the market or prepared by existing methods.

[0045] Figure 1 This is a simplified flowchart illustrating a method for preparing a patterned vanadium-doped molybdenum disulfide nanosheet array according to an embodiment of this application.

[0046] Figure 2 This is a detailed flowchart illustrating a method for preparing a patterned vanadium-doped molybdenum disulfide nanosheet array according to an embodiment of this application; please refer to [link / reference]. Figures 1-2 ,

[0047] This application provides a method for preparing a patterned vanadium-doped molybdenum disulfide nanosheet array, the method comprising:

[0048] S1. A first substrate is obtained, wherein the surface of the first substrate has a patterned vanadium metal film.

[0049] In some embodiments, obtaining a first substrate, the surface of which has a patterned vanadium metal film, includes:

[0050] A custom mask of the same size is attached to the substrate surface, and then thermal evaporation is performed under vacuum conditions to deposit a patterned vanadium metal film on the substrate surface, thus obtaining the first substrate.

[0051] In some embodiments, the substrate includes one of the following: silicon wafer or sapphire.

[0052] In this embodiment, a patterned vanadium metal film pre-deposited on a substrate is used as a doping source. The substrate can be either a silicon wafer or sapphire.

[0053] S2. The first substrate is subjected to oxygen plasma treatment to transform the metal vanadium film into a vanadium oxide film and to enhance the wettability of the first substrate, thereby obtaining a second substrate.

[0054] In some embodiments, the power of the oxygen plasma treatment is 50W to 60W.

[0055] In this embodiment, oxygen plasma treatment transforms the vanadium metal film into a vanadium oxide film and effectively improves the wettability of the sodium molybdate solution with the substrate. If the treatment power is too low, the change in substrate wettability is not significant, which is detrimental to the lateral growth of the material. If the power is too high, material can grow even in uncoated areas of the substrate, which is not conducive to patterning. For example, the power can be 50W, 51W, 52W, 53W, 54W, 55W, 56W, 57W, 58W, 59W, 60W, etc.

[0056] S3. Coat the surface of the second substrate with a molybdenum source to obtain a third substrate;

[0057] In some embodiments, the molybdenum source includes one of the following: sodium molybdate or ammonium molybdate.

[0058] In this embodiment, sodium molybdate or ammonium molybdate can be selected as the molybdenum source without introducing impurities. The molybdenum source solution is prepared by dissolving sodium molybdate or ammonium molybdate in deionized water at a concentration of 0.8 mg / ml to 1.0 mg / ml.

[0059] S4. The third substrate and sulfur powder are subjected to chemical vapor deposition reaction to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array.

[0060] In some embodiments, the third substrate is subjected to a chemical vapor deposition reaction with sulfur powder to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array, including:

[0061] The third substrate and sulfur powder are placed in different temperature zones of heat treatment, and the spacing between the third substrate and the sulfur powder is set to perform a chemical vapor deposition reaction to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array.

[0062] In some embodiments, placing the third substrate and sulfur powder in different temperature zones of heat treatment, and setting the spacing between the third substrate and the sulfur powder, to perform a chemical vapor deposition reaction to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array, includes:

[0063] The third substrate is placed in a third temperature zone, and the sulfur powder is placed in a first temperature zone. The third temperature zone is separated from the first temperature zone by a second temperature zone, and the distance between the third substrate and the sulfur powder is set to 40-50 cm for chemical vapor deposition to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array; wherein,

[0064] The temperature of the first temperature zone is 180-200℃, the temperature of the second temperature zone is 350-500℃, and the temperature of the third temperature zone is 750-800℃.

[0065] In this embodiment, the spacing between the third substrate and the sulfur powder is set to ensure that the substrate and the sulfur powder are located in the middle of the third temperature zone and the first temperature zone, respectively, which is conducive to the chemical vapor deposition reaction to obtain a patterned vanadium-doped molybdenum disulfide nanosheet array. The temperature of the first temperature zone is conducive to the full sublimation of the sulfur powder; the temperature of the second temperature zone serves as a transition zone between the first and third temperature zones to prevent cross-temperature. The temperature of the third temperature zone is suitable for the growth of molybdenum disulfide. For example, the spacing between the third substrate and the sulfur powder can be 40cm, 42cm, 44cm, 46cm, 48cm, 50cm, etc.; the temperature of the first temperature zone can be 180℃, 190℃, 200℃, etc.; the temperature of the second temperature zone can be 350℃, 400℃, 450℃, 500℃, etc.; and the temperature of the third temperature zone can be 750℃, 760℃, 770℃, 780℃, 790℃, 800℃, etc.

[0066] In one embodiment, a tube furnace with a diameter of 25 mm and a length of 66 cm is used for the above heat treatment. In the above chemical vapor deposition process, the treated substrate is placed flat in a quartz boat with the front side facing up and placed in the third temperature zone of the three-temperature zone tube furnace; at the same time, a ceramic boat containing sulfur powder is placed in the first temperature zone on the upstream side; after evacuation and gas washing, the flow rate of the carrier gas (argon) is controlled at 30 sccm and the gas pressure is maintained at atmospheric pressure.

[0067] In some embodiments, the temperature of the third temperature zone is maintained for 8 to 10 minutes.

[0068] In this embodiment, the duration of temperature maintenance in the third temperature zone is conducive to the full growth of molybdenum disulfide. Too short a time may prevent molybdenum disulfide from completing the nucleation and growth process; too long a time may cause molybdenum disulfide to grow vertically. For example, the duration of temperature maintenance in the third temperature zone can be 8 minutes, 9 minutes, 10 minutes, etc.

[0069] The above method yields patterned vanadium-doped molybdenum disulfide nanosheet arrays, achieving in-situ vanadium metal doping of molybdenum disulfide nanosheets and patterned growth of P-type molybdenum disulfide nanosheet arrays. This enables the control of the majority carrier type of molybdenum disulfide, laying the foundation for integrated electronic and optoelectronic applications.

[0070] Based on a general inventive concept, this application provides a patterned vanadium-doped molybdenum disulfide nanosheet array, which is prepared by the method described in any embodiment of the first aspect.

[0071] The patterned vanadium-doped molybdenum disulfide nanosheet array is realized based on the above-described preparation method of the patterned vanadium-doped molybdenum disulfide nanosheet array. The specific steps of the preparation method of the patterned vanadium-doped molybdenum disulfide nanosheet array can be referred to the above embodiments. Since the patterned vanadium-doped molybdenum disulfide nanosheet array adopts some or all of the technical solutions of the above embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above embodiments, which will not be elaborated here.

[0072] Based on a general inventive concept, this application provides a device comprising the patterned vanadium-doped molybdenum disulfide nanosheet array described in any embodiment of the second aspect.

[0073] In the embodiments of this application, the above-mentioned device includes a patterned vanadium-doped molybdenum disulfide nanosheet array, which realizes its integration with modern electronic and optoelectronic technologies. The above-mentioned device can be an electronic device, an optical device, an optoelectronic device, a chemical and biological sensor, or an electrochemical catalytic device.

[0074] The present application is further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the application. Experimental methods in the following embodiments that do not specify specific conditions are generally determined according to national standards. If there is no corresponding national standard, then general international standards, conventional conditions, or conditions recommended by the manufacturer are followed.

[0075] Example 1

[0076] 1) Dissolve 90 mg of sodium molybdate in 100 ml of deionized water to obtain a molybdenum source solution;

[0077] 2) Cut a 1.2cm × 1.2cm silicon substrate, and ultrasonically clean it in acetone, isopropanol and deionized water for 15 minutes in sequence, and blow it dry with an air gun; after attaching a custom mask of the same size, place it in a thermal evaporation equipment, and deposit a 0.5nm patterned vanadium film on the surface of the silicon substrate under vacuum conditions; then treat the silicon substrate with the vanadium film deposited in an oxygen plasma treatment machine at 50W power for 5 minutes; drop the prepared molybdenum source solution on it, spin coat it at 6000rpm for 60s and let it air dry naturally;

[0078] 3) Place the treated silicon substrate face up in a quartz boat and place it in the third temperature zone of a 25mm three-temperature zone tube furnace; at the same time, place a ceramic boat containing 100mg of sulfur powder in the first temperature zone on the upstream side, with a distance of 40-50cm between the two; after evacuation and gas purging, control the carrier gas (argon) flow rate to 30sccm and maintain the gas pressure at atmospheric pressure. Heat the three temperature zones from room temperature to 200℃, 350℃ and 800℃ respectively, and maintain the third temperature zone at 800℃ for 10min for growth.

[0079] Example 2

[0080] 1) Dissolve 90 mg of sodium molybdate in 100 ml of deionized water to obtain a molybdenum source solution;

[0081] 2) Cut a 1.2cm × 1.2cm sapphire substrate, and ultrasonically clean it in acetone, isopropanol and deionized water for 15 minutes in sequence, and blow it dry with an air gun; after attaching a custom mask of the same size, place it in a thermal evaporation equipment, and deposit a 0.5nm patterned vanadium film on the surface of the sapphire substrate under vacuum conditions; then treat the sapphire substrate with the vanadium film on it in an oxygen plasma treatment machine at 50W power for 5 minutes; drop the prepared molybdenum source solution on it, spin coat it at 6000rpm for 60s and let it air dry naturally;

[0082] 3) Place the treated sapphire substrate face up in a quartz boat and place it in the third temperature zone of a 25mm three-temperature zone tube furnace; at the same time, place a ceramic boat containing 100mg of sulfur powder in the first temperature zone on the upstream side, with a distance of 40-50cm between the two; after evacuation and gas purging, control the carrier gas (argon) flow rate to 30sccm and maintain the gas pressure at atmospheric pressure. Heat the three temperature zones from room temperature to 200℃, 350℃ and 800℃ respectively, and maintain the third temperature zone at 800℃ for 8min for growth.

[0083] Comparative Example 1

[0084] 1) Dissolve 90 mg of sodium molybdate in 100 ml of deionized water to obtain a molybdenum source solution;

[0085] 2) Cut a 1.2cm×1.2cm silicon substrate, and ultrasonically clean it in acetone, isopropanol and deionized water for 15 minutes in sequence, and blow it dry with an air gun; then treat it in an oxygen plasma treatment machine at 70W power for 5 minutes; drop the prepared molybdenum source solution on it, spin coat it at 6000rpm for 60s and then let it air dry naturally.

[0086] 3) Place the treated silicon substrate face up in a quartz boat and place it in the third temperature zone of a 25mm three-temperature zone tube furnace; at the same time, place a ceramic boat containing 100mg of sulfur powder in the first temperature zone on the upstream side, with a distance of 40-50cm between the two; after evacuation and gas purging, control the flow rate of the carrier gas (argon) to 30sccm and maintain the gas pressure at atmospheric pressure. Heat the three temperature zones from room temperature to 200℃, 350℃ and 800℃ respectively, and maintain the third temperature zone at 800℃ for 10min for growth.

[0087] Figure 3 This is an optical photograph of a patterned vanadium-doped molybdenum disulfide nanosheet array according to an embodiment of this application; wherein, Figure 3 a-Example 1; Figure 3 b-Example 2; see also Figure 3 This indicates that the patterned vanadium-doped molybdenum disulfide nanosheet array prepared in the embodiments of this application can be applied to the growth of various substrates. Compared with Example 1, the molybdenum disulfide nanosheets grown in Example 2 have a lower proportion of multilayers and larger sizes. This is because the sapphire substrate has better wettability to sodium molybdate solution than the silicon substrate, making it more suitable for the growth of large-sized molybdenum disulfide.

[0088] Figure 4 The images show the Raman spectra of the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide of Comparative Example 1; please refer to [link to relevant documentation]. Figure 4 The Raman spectrum of the patterned vanadium-doped molybdenum disulfide nanosheet array in Example 1 showed a slight red shift, and at 158 ​​cm⁻¹... -1 188cm -1 226cm -1 325cm -1 352cm -1 New peaks appear at these locations, and these changes are due to the disruption of lattice symmetry caused by vanadium atoms.

[0089] Figure 5 The photoluminescence spectra of the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide of Comparative Example 1 are shown below; please refer to [link to Comparative Example 1]. Figure 5 This indicates that vanadium doping significantly reduces photoluminescence compared to undoped monolayer molybdenum disulfide.

[0090] Figure 6XPS data images of the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide in Comparative Example 1, showing the elemental molybdenum (Mo) content. Figure 7 XPS data images of S element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide of Comparative Example 1 are shown. Figure 8 This is an XPS data plot of the V element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application; please refer to [link to example]. Figures 6-8 Through comparative data analysis, vanadium atoms successfully entered the molybdenum disulfide lattice and formed VS bonds.

[0091] Figure 9 This is a low-magnification TEM image of the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application; Figure 10 This is a TEM-EDS elemental mapping image of the Mo element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application; Figure 11 This is a TEM-ED Selemental mapping image of the S element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application; Figure 12 This is a TEM-EDS elemental mapping image of the V element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application; please refer to [link to example image]. Figures 9-12 This provides a more intuitive demonstration of the distribution of vanadium in vanadium-doped monolayer molybdenum disulfide.

[0092] Figure 13 The following are the EDS spectra and elemental contents of each element in the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 of this application; please refer to [link to relevant documentation]. Figure 13 The vanadium doping content is approximately 3.87%.

[0093] Figure 14 The transfer curves are shown for the patterned vanadium-doped molybdenum disulfide nanosheet array of Example 1 and the monolayer molybdenum disulfide field-effect transistor of Comparative Example 1; please refer to [link to Comparative Example 1]. Figure 14 Typical n-type conduction behavior was observed in the molybdenum disulfide field-effect transistor, while the transfer curve of the vanadium-doped monolayer molybdenum disulfide field-effect transistor showed p-type conduction, proving that the majority carrier type of molybdenum disulfide was regulated by vanadium doping.

[0094] The above description is merely a specific embodiment of this application, enabling those skilled in the art to understand or implement this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A method for preparing a patterned vanadium-doped molybdenum disulfide nanosheet array, characterized in that, The method includes: A first substrate is obtained, the surface of which has a patterned vanadium metal film. The first substrate is subjected to oxygen plasma treatment to transform the vanadium metal film into a vanadium oxide film and to enhance the wettability of the first substrate, thereby obtaining a second substrate. The power of the oxygen plasma treatment is 50W~60W. A molybdenum source is coated onto the surface of the second substrate to obtain a third substrate; The third substrate is placed in a third temperature zone, and the sulfur powder is placed in a first temperature zone. The third temperature zone and the first temperature zone are connected. A second temperature zone is defined, and the distance between the third substrate and the sulfur powder is set to 40-50 cm to perform a chemical vapor deposition reaction, thereby obtaining a patterned vanadium-doped molybdenum disulfide nanosheet array; wherein, The temperature of the first temperature zone is 180~200℃, the temperature of the second temperature zone is 350~500℃, the temperature of the third temperature zone is 750~800℃, and the temperature of the third temperature zone is maintained for 8~10 minutes. In the chemical vapor deposition process, the carrier gas atmosphere is controlled to be argon, the carrier gas flow rate is 30 sccm, and the gas pressure is maintained at atmospheric pressure.

2. The method according to claim 1, characterized in that, The molybdenum source includes one of the following: sodium molybdate or ammonium molybdate.

3. The method according to claim 1, characterized in that, The substrate includes one of the following: silicon wafer or sapphire.

4. The method according to claim 1, characterized in that, The first substrate is obtained, the first substrate The surface has a patterned vanadium metal film, including: A custom-made photomask of the same size is attached to the substrate surface, followed by thermal evaporation under vacuum conditions to make the substrate... A patterned vanadium metal film is deposited on the surface to obtain the first substrate.

5. A patterned vanadium-doped molybdenum disulfide nanosheet array, characterized in that, The patterned vanadium-doped disulfide The molybdenum nanosheet array was prepared by the method described in any one of claims 1 to 4.

6. A device, characterized in that, The device includes the patterned vanadium-doped disulfide as described in claim 5. Molybdenum nanosheet array.

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