Display panel and display device

Abstract

A display panel and a display device, wherein the display panel comprises a substrate, a first electrode layer, a pixel definition layer, a light-emitting pattern, a light-absorbing pattern and a second electrode layer. The first electrode layer comprises a first anode and a second anode, and the first anode and the second anode are respectively configured to transmit different anode signals. The pixel definition layer is provided with a first opening and a second opening, the first opening corresponds to the position of the first anode, and the second opening corresponds to the position of the second anode. At least part of the light-emitting pattern is located in the first opening. At least part of the light-absorbing pattern is located in the second opening. The second electrode layer covers the light-emitting pattern and the light-absorbing pattern. The display panel comprises a plurality of sub-pixels and at least one photosensor, and each photosensor is arranged adjacent to at least one sub-pixel. The sub-pixel comprises the light-emitting pattern, and the photosensor comprises the light-absorbing pattern.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of display, and in particular, to a display panel and a display device. BACKGROUND

[0002] Fingerprint identification technology refers to identifying fingerprint information by sensing and analyzing the valley and ridge signals of the fingerprint through a fingerprint identification module, and has the advantages of high security and convenient and fast operation, and is widely applied to electronic products. The implementation modes of fingerprint imaging technology include optical imaging, capacitive imaging, ultrasonic imaging and other technologies. Among them, optical fingerprint identification technology gradually becomes the mainstream of fingerprint identification technology because of its strong penetration ability, support for full-screen placement, simple product structure design and other characteristics, and is widely applied to electronic products.

[0003] At present, the optical fingerprint sensor in the display device is arranged under the screen, that is, arranged on the non-display side of the display panel. The fingerprint identification process of the optical fingerprint sensor under the screen is that the light emitted by the display panel irradiates on the finger located on the display side surface of the display panel, the light forms return light with fingerprint information after being reflected by the finger, and the return light irradiates on the optical fingerprint sensor under the screen after passing through the display panel to perform fingerprint identification detection. SUMMARY

[0004] In one aspect, a display panel is provided, comprising a substrate, a first electrode layer, a pixel definition layer, a light emitting pattern, a light absorbing pattern, and a second electrode layer.

[0005] The first electrode layer is arranged on one side of the substrate; the first electrode layer comprises a first anode and a second anode, and the first anode and the second anode are respectively configured to transmit different anode signals. The pixel definition layer is arranged on the side of the first electrode layer away from the substrate; the pixel definition layer is provided with a first opening and a second opening, the first opening corresponds to the position of the first anode, and the second opening corresponds to the position of the second anode. At least part of the light emitting pattern is located in the first opening. At least part of the light absorbing pattern is located in the second opening. The second electrode layer is arranged on the side of the pixel definition layer away from the first electrode layer, and covers the light emitting pattern and the light absorbing pattern.

[0006] Among them, the display panel comprises a plurality of sub-pixels and at least one photoelectric sensor, each photoelectric sensor is arranged adjacent to at least one sub-pixel. The sub-pixel comprises the first anode, the light emitting pattern and the part of the second electrode layer covering the light emitting pattern, and the photoelectric sensor comprises the second anode, the light absorbing pattern and the part of the second electrode layer covering the light absorbing pattern.

[0007] In some embodiments, the light-absorbing pattern comprises a plurality of sub-light-absorbing patterns stacked along a direction perpendicular to the substrate, each of the sub-light-absorbing patterns being capable of absorbing light of at least one color.

[0008] In some embodiments, the light-absorbing pattern comprises a first sub-light-absorbing pattern and a second sub-light-absorbing pattern, the first sub-light-absorbing pattern being capable of absorbing light of a same color as the second sub-light-absorbing pattern.

[0009] In some embodiments, the first sub-light-absorbing pattern and the second sub-light-absorbing pattern are capable of absorbing light in substantially the same wavelength range.

[0010] In some embodiments, the first sub-light-absorbing pattern and the second sub-light-absorbing pattern are of the same material.

[0011] In some embodiments, the light-absorbing pattern comprises a first sub-light-absorbing pattern and a second sub-light-absorbing pattern, the first sub-light-absorbing pattern being capable of absorbing light of a color different from the second sub-light-absorbing pattern.

[0012] In some embodiments, one of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern is capable of absorbing red light and blue light, and the other of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern is capable of absorbing green light; or, one of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern is capable of absorbing red light and green light, and the other of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern is capable of absorbing blue light; or, one of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern is capable of absorbing blue light and green light, and the other of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern is capable of absorbing red light.

[0013] In some embodiments, the display panel further comprises a second heterojunction disposed between the first sub-light-absorbing pattern and the second sub-light-absorbing pattern.

[0014] In some embodiments, the light-emitting pattern comprises a first sub-light-emitting pattern and a second sub-light-emitting pattern stacked along a direction perpendicular to the substrate. The display panel further comprises a first heterojunction disposed between the first sub-light-emitting pattern and the second sub-light-emitting pattern; the first heterojunction is connected to and integrally disposed with the second heterojunction.

[0015] In some embodiments, one of the light-absorbing patterns of the photoelectric sensor is capable of absorbing light of one color. The photoelectric sensor capable of absorbing light of the target color is disposed adjacent to the sub-pixel capable of emitting light of the target color.

[0016] In some embodiments, the light absorption pattern of one of the photoelectric sensors is capable of absorbing two colors of light. The photoelectric sensor capable of absorbing a first target color of light and a second target color of light is disposed between a sub-pixel capable of emitting the first target color of light and a sub-pixel capable of emitting the second target color of light.

[0017] In some embodiments, the light absorption pattern of one of the photoelectric sensors is capable of absorbing three colors of light, including red light, blue light, and green light. The photoelectric sensor capable of absorbing the three colors of light is disposed adjacent to a sub-pixel capable of emitting green light.

[0018] In some embodiments, the material of the light absorption pattern includes a perovskite-based semiconductor material. The light absorption patterns capable of absorbing different colors of light correspond to different band gaps of the materials.

[0019] In some embodiments, the material of the light absorption pattern has a molecular formula of RNH3BY 3-m X m wherein R is C n H 2n+1 , B is a metal element, X and Y are different halogen elements, and m and n are integers. The light absorption patterns capable of absorbing different colors of light correspond to different mass ratios of X and Y of the materials.

[0020] In some embodiments, the display panel further includes a first light shielding pattern and a cover plate. The first light shielding pattern is disposed on a side of the second electrode layer away from the substrate; the first light shielding pattern is provided with a third opening and a fourth opening, the third opening is disposed corresponding to the light emitting pattern, and the fourth opening is disposed corresponding to the light absorption pattern. The cover plate is disposed on a side of the first light shielding pattern away from the substrate.

[0021] wherein the ratio between the vertical distance from the surface of the first light shielding pattern away from the substrate to the surface of the cover plate away from the substrate and the vertical distance from the surface of the first light shielding pattern away from the substrate to the light absorption pattern is substantially 1.8-2.8.

[0022] In some embodiments, the line between the sidewall of the fourth opening and the corresponding light absorption pattern of the fourth opening and the smallest included angle between the light absorption patterns are substantially 40°-60°.

[0023] In some embodiments, the display panel further comprises a second light shielding pattern disposed between the substrate and the second electrode layer. The second light shielding pattern is located between the light absorbing pattern and the light emitting pattern adjacent to the light absorbing pattern, and a vertical distance from a surface of the substrate to the second light shielding pattern is greater than or equal to a vertical distance from the surface of the substrate to the light absorbing pattern and the light emitting pattern.

[0024] In some embodiments, a ratio of an area of the first opening to an area of the second opening is approximately 1-3.5.

[0025] In some embodiments, the display panel further comprises an encapsulation layer disposed on a side of the second electrode layer away from the substrate, and a refractive index of the encapsulation layer is 1.5-1.8.

[0026] In some embodiments, the display panel further comprises a driving signal line, one end of the driving signal line is electrically connected to the second anode, and the other end is electrically connected to an external processor. The driving signal line is configured to transmit a second anode signal to the second anode.

[0027] In some embodiments, the display panel further comprises a circuit layer disposed between the substrate and the first electrode layer. The circuit layer comprises a pixel circuit and a light sensing driving circuit, the pixel circuit is electrically connected to the first anode, and the light sensing driving circuit is electrically connected to the second anode.

[0028] In some embodiments, the circuit layer comprises an active layer, a gate insulating layer, a gate conductive layer, an interlayer dielectric layer, and a source-drain conductive layer arranged in a direction perpendicular to the substrate and away from the substrate.

[0029] Each pixel circuit comprises a first active layer pattern, a scan signal line, and a first power supply line, the first active layer pattern is located in the active layer, the scan signal line is located in the gate conductive layer, and the first power supply line is located in the source-drain conductive layer. An overlapping portion of the first active layer pattern and the scan signal line forms a transistor, at least one transistor is electrically connected to the first anode, and the first power supply line is electrically connected to at least one transistor.

[0030] In some embodiments, the light sensing driving circuit comprises a diode and a second power supply line, the second power supply line is located in the source-drain conductive layer, one end of the diode is electrically connected to the second anode, and the other end is electrically connected to the second power supply line.

[0031] In some embodiments, the diode includes a second active layer pattern located on the active layer. The second active layer pattern includes a first component and a second component electrically connected, the first component being a hole-type semiconductor, and the second component being an electron-type semiconductor. The first component is electrically connected to the second anode, and the second component is electrically connected to the second power line.

[0032] In some embodiments, the display panel further includes a second hole transport pattern located between the second anode and the light absorption pattern.

[0033] In some embodiments, the display panel further includes a first hole transport pattern located between the first anode and the light emitting pattern. The material of the first hole transport pattern is different from the material of the second hole transport pattern.

[0034] In some embodiments, the display panel further includes a first common layer and / or a second common layer. The first common layer is located between the first anode and the light emitting pattern, and between the second anode and the light absorption pattern. The first common layer includes a hole transport layer and / or a hole injection layer. The second common layer is located between the light emitting pattern and the second electrode layer, and between the light absorption pattern and the second electrode layer. The second common layer includes an electron transport layer and / or an electron injection layer.

[0035] In some embodiments, the second electrode layer includes a first cathode corresponding to the position of the light emitting pattern, and a second cathode corresponding to the position of the light absorption pattern. The first cathode and the second cathode are integrally arranged, or the first cathode and the second cathode are insulated from each other, and the first cathode and the second cathode are respectively configured to transmit different cathode signals.

[0036] In some embodiments, the voltage between the first anode and the second electrode layer ranges from 8V to 16V, and the voltage between the second anode and the second electrode layer ranges from -2V to 8V.

[0037] In another aspect, a display panel is provided, including a substrate, a first electrode layer, a pixel definition layer, a light emitting pattern, a light absorption pattern, a second electrode layer, a first light shielding pattern, and a cover plate.

[0038] The first electrode layer is arranged on one side of the substrate; the first electrode layer comprises a first anode and a second anode, and the first anode and the second anode are respectively configured to transmit different anode signals. The pixel defining layer is arranged on the side of the first electrode layer away from the substrate; the pixel defining layer is provided with a first opening and a second opening, the first opening corresponds to the position of the first anode, and the second opening corresponds to the position of the second anode. At least part of the light-emitting pattern is located in the first opening. At least part of the light-absorbing pattern is located in the second opening. The second electrode layer is arranged on the side of the pixel defining layer away from the first electrode layer, and covers the light-emitting pattern and the light-absorbing pattern. The first light-shielding pattern is arranged on the side of the second electrode layer away from the substrate. The cover plate is arranged on the side of the first light-shielding pattern away from the substrate.

[0039] The ratio between the vertical distance from the surface of the first light-shielding pattern away from the substrate to the surface of the cover plate away from the substrate and the vertical distance from the surface of the first light-shielding pattern away from the substrate to the light-absorbing pattern is substantially 1.8-2.8.

[0040] In another aspect, a display device is provided, comprising a housing and a display panel as described in any one of the preceding embodiments. The housing is arranged at least partially around the display panel. BRIEF DESCRIPTION OF DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the present disclosure, the following will briefly introduce the drawings needed to be used in some embodiments of the present disclosure. Obviously, the drawings described in the following description are only some drawings of the embodiments of the present disclosure, and other drawings can also be obtained by those skilled in the art according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limited to the actual size, actual process, actual timing of signals, etc. of the products involved in the embodiments of the present disclosure.

[0042] Figure 1 A top view of a display device provided according to some embodiments;

[0043] Figure 2 An exploded view of a display device provided according to some embodiments;

[0044] Figure 3 A sectional view along the section line A-A' in Figure 1

[0045] Figure 4 A top view of a display panel provided according to some embodiments;

[0046] Figure 5 Another top view of a display panel provided according to some embodiments;​

[0047] Figure 6 is a cross-sectional view along section line B-B' in Figure 2 ;

[0048] Figure 7 is a top view of a functional device region provided in accordance with some embodiments;

[0049] Figure 8 is another top view of a functional device region provided in accordance with some embodiments;

[0050] Figure 9 is another top view of a functional device region provided in accordance with some embodiments;

[0051] Figure 10 is another top view of a functional device region provided in accordance with some embodiments;

[0052] Figure 11 is another top view of a functional device region provided in accordance with some embodiments;

[0053] Figure 12 is another top view of a functional device region provided in accordance with some embodiments;

[0054] Figure 13 is another top view of a functional device region provided in accordance with some embodiments;

[0055] Figure 14 is another cross-sectional view along section line B-B' in Figure 2 ;

[0056] Figure 15 is another cross-sectional view along section line B-B' in Figure 2 ;

[0057] Figure 16 is another cross-sectional view along section line B-B' in Figure 2 ;

[0058] Figure 17 is another top view of a display panel provided in accordance with some embodiments;

[0059] Figure 18 is another cross-sectional view along section line B-B' in Figure 2 ;

[0060] Figure 19 is another cross-sectional view along section line B-B' in Figure 2 ;

[0061] Figure 20 is another top view of a display panel provided in accordance with some embodiments;

[0062] Figure 21 Another top view of a display panel provided according to some embodiments;

[0063] Figure 22 Another sectional view along the section line B-B' in Figure 2

[0064] Figure 23 Another sectional view along the section line B-B' in Figure 2

[0065] Figure 24 Another sectional view along the section line B-B' in Figure 2

[0066] Figure 25 A display diagram of a picture to be scanned provided according to some embodiments;

[0067] Figure 26 A display diagram of a picture scanned by a display device provided according to some embodiments. DETAILED DESCRIPTION

[0068] The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by a person of ordinary skill in the art belong to the scope of protection of the present disclosure.

[0069] Unless otherwise required by context, the term “comprise” and other forms such as “comprises”, “comprising”, “includes”, “including” and “includes” are to be construed as open, inclusive meaning, i.e. “including, but not limited to”. In the description of the specification, the terms “one embodiment”, “some embodiments”, “exemplary embodiments”, “example”, “specific example” or “some examples” are intended to mean that the specific features, structures, materials or characteristics related to the embodiment or example are included in at least one embodiment or example of the present disclosure. The illustrative representation of the above terms does not necessarily mean the same embodiment or example. In addition, the specific features, structures, materials or characteristics described can be included in any one or more embodiments or examples in any appropriate manner.

[0070] ​​​The terms "first", "second", etc. are used herein only to describe one implementation, and do not imply "relational" or "logical" significance, unless otherwise noted. Thus, the features defined by "first", "second", etc. can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, the meaning of "a plurality" is two or more, unless otherwise specified.

[0071] In describing some embodiments, "electrically connected" and "connected" and variations thereof can be used. For example, the term "electrically connected" can be used in describing some embodiments to indicate that two or more components have direct physical or electrical contact with each other. The embodiments disclosed herein are not necessarily limited in this context.

[0072] "A, B, and C at least one of" has the same meaning as "at least one of A, B, or C", both of which include the following combinations: only A, only B, only C, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B, and C.

[0073] "A and / or B" includes the following three combinations: only A, only B, and a combination of A and B.

[0074] As used herein, "about", "approximately", or "around" includes the recited value and the average value within an acceptable range of deviation from the specific value, as determined by a person of ordinary skill in the art taking into account the measurement being discussed and the error associated with the measurement of the specific quantity (i.e., limitations of the measurement system).

[0075] In the description of the present disclosure, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present disclosure and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present disclosure.

[0076] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or there can be an intermediate layer between the layer or element and the other layer or substrate.

[0077] Exemplary embodiments are described herein with reference to cross-sectional and / or plan view illustrations that are schematic illustrations of idealized embodiments. Variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated as a rectangle will, typically, have rounded or curved features. Thus, the regions illustrated in the figures are schematic and their shapes are not intended to illustrate the precise shape of a region that would be formed in a device and are not intended to limit the scope of the exemplary embodiments.

[0078] Figure 1 A top view of a display device 1000 is provided for some embodiments of the disclosure. The display device 1000 can be any device that displays whether in motion (e.g., video) or stationary (e.g., still images) and whether textual or graphical. More specifically, it is contemplated that embodiments can be implemented in or in association with a variety of electronic devices, such as (but not limited to), mobile telephones, wireless devices, personal data assistants (PDAs), virtual reality (VR) displays, hand-held or portable computers, global positioning system (GPS) receivers / navigators, cameras, MP4 video players, camcorders, game consoles, wrist watches, clocks, calculators, television monitors, flat panel displays, computer monitors, auto displays (e.g., odometer display, etc.), cockpit controls and / or displays, camera view displays (e.g., display of a rear view camera in a vehicle), electronic photographs, electronic billboards or signs, projections, architectural structures, packaging, and aesthetic structures (e.g., display of images on a piece of jewelry) and the like.

[0079] As shown in FIGS. 1A and IB, the display device 1000 can include a display panel 100. Figure 1 and Figure 2 As shown in FIGS. 1A and IB, the display device 1000 can include a display panel 100.

[0080] The display panel 100 can be a liquid crystal display (LCD) panel. The display panel 100 can also be an electroluminescent display panel or a photoluminescent display panel. When the display panel 100 is an electroluminescent display panel, the electroluminescent display panel can be an organic light-emitting diode (OLED) display panel or a quantum dot light emitting diode (QLED) display panel. When the display panel 100 is a photoluminescent display panel, the photoluminescent display panel can be a quantum dot photoluminescent display panel.

[0081] The display panel 100 includes a display side and a non-display side. The display side is a side of the display panel 100 on which light emitting display is performed. The non-display side is a side of the display panel 100 that faces away from the display side.

[0082] In some embodiments, as shown in FIG. 1, the display device 1000 can further include a flexible circuit board 200. Figure 2

[0083] The flexible circuit board 200 is configured to be connected to the display panel 100. Referring to FIG. 2, the flexible circuit board 200 can be folded along the dashed line L toward the non-display side of the display panel 100, so that the flexible circuit board 200 is located on the back of the display panel 100. Figure 2

[0084] In some embodiments, the display device 1000 can further include a touch chip, a driving chip, and the like.

[0085] The touch chip can be disposed on the flexible circuit board 200. The touch chip is configured to be electrically connected to a touch structure in the display panel 100, so as to transmit a touch signal to the touch structure and realize a touch function.

[0086] The driving chip can be disposed on the display panel 100. The driving chip is configured to be electrically connected to a signal line in the display panel 100, so as to transmit a light emitting control signal to a sub-pixel electrically connected to the signal line and realize a light emitting display function.

[0087] In some embodiments, the display device 1000 can further include a housing that at least partially surrounds the display panel 100. The housing can be a U-shaped groove, and the display panel 100, the flexible circuit board 200 after being folded, and the like are disposed in the U-shaped groove.

[0088] In the related art, as shown in FIG. 3, a display device 3000 includes a display panel 3100, a flexible circuit board 3200, and a housing 3300. Figure 3 ​​As shown, the display device 1000' further includes an optical fingerprint sensor M'.

[0089] Referring to Figure 3 The optical fingerprint sensor M' is arranged under the screen, i.e., arranged on the non-display side of the display panel 100'. During fingerprint recognition by placing a finger on the display side surface of the display panel 100', the light emitted by the display panel 100' is irradiated on the finger, and the fingerprint on the finger reflects the light to form return light with fingerprint information. The return light passes through the display panel 100' and finally reaches the optical fingerprint sensor M' on the non-display side of the display panel 100' and is received by the optical fingerprint sensor M', so as to realize recognition and detection of the fingerprint.

[0090] The present inventors have found that the return light needs to pass through a plurality of film layer structures before reaching the optical fingerprint sensor M'.

[0091] For example, with the development of display technology, display devices 1000' with flexible display panels 100' have been rapidly developed. In the flexible display device, a rigid support structure is arranged on the non-display side of the display panel 100' to support the flexible component such as the display panel 100' and avoid flexible deformation. The support layer is mostly stainless steel, which has poor light transmittance and greatly affects the transmission of the return light, which easily leads to a linear decrease in the fingerprint recognition accuracy and recognition efficiency of the optical fingerprint sensor M'.

[0092] Alternatively, for example, referring to Figure 3 The non-display side of the display panel 100' is further provided with a back film 300, a buffer 400, an adhesive layer 500, and a heat dissipation layer 600, etc. These film layer structures result in low light transmittance of the display device, thereby reducing the intensity of the return light received by the optical fingerprint sensor M' and affecting the functional implementation effect of the optical fingerprint sensor M'.

[0093] To solve the above technical problems, the display panel 100 is provided.

[0094] As shown in Figure 4 and Figure 5 The display panel 100 includes a plurality of sub-pixels P.

[0095] Exemplarily, each sub-pixel P can emit one of blue light, green light, red light, or white light.

[0096] For example, referring to Figure 4 and Figure 5The plurality of sub-pixels P can include a first sub-pixel P1, a second sub-pixel P2, and a third sub-pixel P3, wherein the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 respectively emit light of different colors. For example, the first sub-pixel P1 can emit red light, the second sub-pixel P2 can emit green light, and the third sub-pixel P3 can emit blue light.

[0097] Exemplarily, the plurality of sub-pixels P can be arranged in different arrangements.

[0098] For example, referring to Figure 4 The plurality of sub-pixels P are arranged in a Real RGB arrangement. The plurality of sub-pixels P are divided into a plurality of first pixel columns S1 and a plurality of second pixel columns S2, the first pixel columns S1 and the second pixel columns S2 both extend along the second direction Y, and the plurality of first pixel columns S1 and the plurality of second pixel columns S2 are alternately arranged along the first direction X.

[0099] The first pixel column S1 includes a plurality of first sub-pixels P1 and a plurality of third sub-pixels P3 alternately arranged along the second direction Y, and the second pixel column S2 includes a plurality of second sub-pixels P2 arranged in sequence along the second direction Y.

[0100] For example, referring to Figure 5 The plurality of sub-pixels P are arranged in a diamond arrangement. In the plurality of sub-pixels P, the first sub-pixels P1 and the second sub-pixels P2 are alternately arranged along the second direction Y, and the first sub-pixels P1 and the second sub-pixels P2 are also alternately arranged along the first direction X; the third sub-pixels P3 are arrayed along the first direction X and the second direction Y.

[0101] Exemplarily, in the plurality of sub-pixels P arranged in the diamond arrangement, the sub-pixels P are rectangular, and one diagonal of the rectangle extends along the first direction X, and the other diagonal extends along the second direction Y.

[0102] Exemplarily, in the plurality of sub-pixels P arranged in the diamond arrangement, the sub-pixels P are substantially rectangular, for example, four corners of the rectangle are arc-shaped corners.

[0103] Exemplarily, in the plurality of sub-pixels P arranged in the diamond arrangement, at least one type of sub-pixel P is substantially fan-shaped.

[0104] For example, the plurality of sub-pixels P can also be arranged in a GGRB arrangement.

[0105] It should be noted that the arrangement of the plurality of sub-pixels P in the foregoing embodiments is exemplary and does not limit the arrangement of the plurality of sub-pixels P in the display device 1000 provided by the embodiments of the present disclosure.

[0106] The first direction X and the second direction Y intersect each other. For example, referring to Figure 4The first direction X and the second direction Y can be perpendicular to each other.

[0107] It should be noted that the first direction X can be a horizontal direction of the display device 1000, and the second direction Y can be a vertical direction of the display device 1000; or the first direction X can be a row direction in the arrayed arrangement of the plurality of sub-pixels P, and the second direction Y can be a column direction in the arrayed arrangement of the plurality of sub-pixels P.

[0108] In the drawings of the present disclosure, only the first direction X is taken as the row direction and the second direction Y is taken as the column direction as an example. In the embodiments of the present disclosure, the technical solutions obtained by rotating the drawings by a certain angle (for example, 30 degrees, 45 degrees, or 90 degrees, etc.) are also within the protection scope of the present disclosure.

[0109] As shown in FIG. 1, the display panel 100 includes a plurality of sub-pixels P arranged in an array. Figure 4 and Figure 5 The display panel 100 further includes at least one photoelectric sensor M, each of which is arranged adjacent to at least one sub-pixel P.

[0110] The photoelectric sensor M is configured to receive return light formed by light emitted by the sub-pixel P after being reflected on a target object, so as to realize identification, detection, or scanning imaging of the target object.

[0111] The aforementioned “target object” can be a finger, a face, or a picture, etc., which is an object to be identified, detected, or scanned by the photoelectric sensor M.

[0112] For example, in the case where the target object is a finger, the photoelectric sensor M is configured to receive return light formed by light emitted by the sub-pixel P after being reflected by the finger, and analyze the return light, so as to realize detection and identification of the fingerprint of the finger. For example, in the case where the target object is a face, the photoelectric sensor M is configured to receive return light formed by light emitted by the sub-pixel P after being reflected by the face, and analyze the return light, so as to realize face detection or face identification. For example, in the case where the target object is a picture, the photoelectric sensor M is configured to receive return light and form an image according to the return light, i.e., realize scanning imaging of the picture.

[0113] It should be noted that the aforementioned embodiments of the present disclosure only exemplify the target object, and do not limit the specific shape and type of the target object, and the function of the photoelectric sensor M. For example, the photoelectric sensor M can also be configured to perform identification and detection of palm prints, irises, etc.

[0114] For example, referring to FIG. 2, the photoelectric sensor M is configured to receive return light formed by light emitted by the sub-pixel P after being reflected by a finger, and analyze the return light, so as to realize detection and identification of the fingerprint of the finger. Figure 4The photoelectric sensor M is located in the functional device area S (the area in the display panel 100 where the photoelectric sensor M is located). This functional device area S occupies only a small portion of the display panel 100, meaning the photoelectric sensor M is locally located. For example, the photoelectric sensor M is only located in a position on the display panel 100 that is convenient for the thumb to press. By locally setting the photoelectric sensor M, the corresponding function (such as fingerprint recognition) can be achieved while avoiding the excessive cost caused by setting the photoelectric sensor M across the entire screen.

[0115] For example, see Figure 5 The photoelectric sensor M is located in the functional device area S, and the area of ​​the functional device area S is approximately equal to the total screen area of ​​the display panel 100, meaning that the photoelectric sensor M is set across the entire screen. By setting the photoelectric sensor M across the entire screen of the display panel 100, the effective area of ​​the display panel 100 for recognition, detection, or scanning imaging is increased, thereby expanding the application scenarios of the display panel 100 equipped with the photoelectric sensor M. For example, the display panel 100 equipped with the photoelectric sensor M can be used for the detection, recognition, or scanning of large-sized targets.

[0116] It should be noted that the location and area of ​​the aforementioned functional device area S, as well as the location, density, and number of photoelectric sensors M, are all set according to requirements. The aforementioned embodiments only illustrate the location of the photoelectric sensors M and do not impose any limitations on it.

[0117] Figure 6 The edge of the display panel 100 is shown. Figure 2 Cross-sectional view along section line B-B'. (See figure) Figure 6 As shown, the display panel 100 includes a substrate 21, a first electrode layer 301, a pixel defining layer 302, a light-emitting pattern 303A, a light-absorbing pattern 303B, and a second electrode layer 304.

[0118] The substrate 21 can be a single-layer structure or a multi-layer structure. For example, the substrate 21 may include a flexible base layer and a buffer layer stacked sequentially. Alternatively, the substrate 21 may include multiple flexible base layers and multiple buffer layers arranged alternately. The flexible base layer may be made of polyimide, and the buffer layer may be made of silicon nitride and / or silicon oxide to achieve the effects of blocking water and oxygen and blocking alkaline ions.

[0119] See Figure 6 The first electrode layer 301 is disposed on one side of the substrate 21. The first electrode layer 301 includes a first anode 301A and a second anode 301B, which are respectively configured to transmit different anode signals.

[0120] Exemplarily, the first anode 301A and the second anode 301B are both configured to transmit a high-level voltage, for example, configured to transmit a power supply voltage.

[0121] Exemplarily, the materials of the first anode 301A and the second anode 301B can both include indium tin oxide, indium zinc oxide or zinc oxide.

[0122] Referring to Figure 6 The pixel defining layer 302 is disposed on the side of the first electrode layer 301 away from the substrate 21. The pixel defining layer 302 is provided with a first opening K1 and a second opening K2. The first opening K1 corresponds to the position of the first anode 301A, and the second opening K2 corresponds to the position of the second anode 301B.

[0123] It should be noted that the aforementioned “the first opening K1 corresponds to the position of the first anode 301A” means that the orthographic projection of the first opening K1 on the substrate 21 is located within the orthographic projection of the first anode 301A on the substrate 21, and similarly, “the second opening K2 corresponds to the position of the second anode 301B” means that the orthographic projection of the second opening K2 on the substrate 21 is located within the orthographic projection of the second anode 301B on the substrate 21. After the pixel defining layer 302 is disposed on the side of the first electrode layer 301, the first opening K1 can expose the first anode 301A, and the second opening K2 can expose the second anode 301B.

[0124] Each first opening K1 is used to define an effective light-emitting area of a sub-pixel P. Each second opening K2 is used to define an effective light-absorbing area of a photosensor M.

[0125] Exemplarily, the shape of the first opening K1 along a cross section parallel to the substrate 21 can be rectangular, circular or elliptical, and the shape of the second opening K2 along a cross section parallel to the substrate 21 can also be rectangular, circular or elliptical.

[0126] Referring to Figure 6 At least part of the light-emitting pattern 303A is disposed in the first opening K1.

[0127] Exemplarily, the part of the light-emitting pattern 303A disposed in the first opening K1 is in electrical contact with the first anode 301A.

[0128] Exemplarily, the light-emitting pattern 303A can be plated in the first opening K1 by a plating process.

[0129] Exemplarily, the material of the light-emitting pattern 303A can be a fluorescent light-emitting material or a phosphorescent light-emitting material, which can emit red light, green light, blue light or white light, etc.

[0130] Exemplarily, the evaporation of the light-emitting pattern 303A can be performed in sequence according to the different colors of the light that can be emitted, for example, evaporating all the light-emitting patterns 303A capable of emitting green light first, then evaporating all the light-emitting patterns 303A capable of emitting blue light, and then evaporating all the light-emitting patterns 303A capable of emitting red light.

[0131] Referring to Figure 6 , at least part of the light-absorbing pattern 303B is arranged in the second opening K2.

[0132] Exemplarily, the part of the light-absorbing pattern 303B arranged in the second opening K2 is in electrical contact with the second anode 301B.

[0133] Exemplarily, the light-absorbing pattern 303B can be plated in the second opening K2 by an evaporation process.

[0134] Exemplarily, the light-absorbing pattern 303B can be plated in the second opening K2 after all the light-emitting patterns 303A capable of emitting red light, blue light and green light are completely evaporated.

[0135] Exemplarily, the light-absorbing pattern 303B can absorb the light emitted by the light-emitting pattern 303A. For example, the light-absorbing pattern 303B can absorb the light directly emitted by the light-emitting pattern 303A, and the light reflected by the target object or other structures after being emitted by the light-emitting pattern 303A.

[0136] Referring to Figure 6 , the second electrode layer 304 is arranged on the side of the pixel electrode layer 302 away from the substrate 21, and covers the light-emitting pattern 303A and the light-absorbing pattern 303B.

[0137] Exemplarily, the material of the second electrode layer 304 can include lithium (Li), aluminum (Al), magnesium (Mg), silver (Ag), etc.

[0138] Exemplarily, the second electrode layer 304 is configured to transmit a low-level voltage.

[0139] Referring to Figure 6 , the sub-pixel P includes the first anode 301A, the light-emitting pattern 303A, and the part of the second electrode layer 304 covering the light-emitting pattern 303A.

[0140] The high-level voltage transmitted by the first anode 301A and the low-level voltage transmitted by the part of the second electrode layer 304 covering the light-emitting pattern 303A jointly form an electric field, under the drive of the electric field, the holes in the first anode 301A and the electrons in the second electrode layer 304 are both transmitted to the light-emitting pattern 303A located in the first opening K1, and the holes and the electrons combine in the light-emitting pattern 303A to form excitons to emit light.

[0141] The light emitted by the light-emitting pattern 303A is emitted through the first opening K1, i.e., the area where the first opening K1 is located is the effective light-emitting area of the sub-pixel P.

[0142] Referring to Figure 6 , the photoelectric sensor M includes a second anode 301B, a light-absorbing pattern 303B, and a portion of the second electrode layer 304 covering the light-absorbing pattern 303B.

[0143] After the light-absorbing pattern 303B absorbs light (e.g., light emitted by the sub-pixel P and reflected by the target object), photo-generated carriers are generated. The high-level voltage transmitted by the second anode 301B and the low-level voltage transmitted by the portion of the second electrode layer 304 covering the light-absorbing pattern 303B jointly form an electric field, under the action of which the aforementioned photo-generated carriers are transported and analyzed, thereby realizing optical detection, optical recognition, and scanning imaging.

[0144] After the light emitted by the light-emitting pattern 303A is irradiated to the target object and reflected by the target object, it is incident on the light-absorbing pattern 303B through the second opening K2, i.e., the area where the second opening K2 is located is the effective light-absorbing area of the photoelectric sensor M.

[0145] By arranging the photoelectric sensor M and arranging the light-absorbing pattern 303B of the photoelectric sensor M between the first electrode layer 301 and the second electrode layer 304, i.e., arranging the photoelectric sensor M in the display panel 100, on the one hand, compared with under-screen arrangement, the in-screen arrangement of the photoelectric sensor M can effectively shorten the vertical distance between the photoelectric sensor M and the target object, thereby reducing the loss of return light in the transmission process, improving the functional implementation effect of the photoelectric sensor M, for example, improving the accuracy and sensitivity of fingerprint recognition; on the other hand, effectively applying the photoelectric sensor M to the display device 1000, so that the display device 1000 can realize multiple functions such as recognition, detection, and scanning imaging of the target object, and compared with the traditional optical fingerprint sensor, the photoelectric sensor M is fast in response, high in sensitivity, and long in service life.

[0146] In some embodiments, as shown in Figure 4 and Figure 5 , the display panel 100 can include a plurality of sub-pixels P and at least one photoelectric sensor M. The at least one photoelectric sensor M can absorb at least one of red light, blue light, or green light.

[0147] For example, the at least one photoelectric sensor M can only absorb one color, thereby realizing the recognition and detection of the target object such as a fingerprint, and realizing functions such as monochrome scanning imaging.

[0148] For example, referring to Figure 7In the functional device area S, among the multiple photoelectric sensors M, each photoelectric sensor M can only absorb blue light (i.e., the third photoelectric sensor M3), thereby enabling the identification and detection of the target object, or achieving blue scanning imaging, that is, the image obtained by scanning imaging is blue.

[0149] For example, the at least one photoelectric sensor M can absorb two colors, thereby enabling the identification and detection of targets such as fingerprints, as well as the scanning imaging of specific colors (e.g., blue-green).

[0150] For example, see Figure 8 Among the multiple photoelectric sensors M in the functional device area S, some photoelectric sensors M can only absorb red light (i.e., the first photoelectric sensor M1), and other photoelectric sensors M can only absorb green light (i.e., the second photoelectric sensor M2). This allows the multiple photoelectric sensors M in the functional device area S to absorb both red and green light, thereby enabling the identification and detection of the target object, or to achieve yellow (a mixture of red and green) scanning imaging, that is, the image obtained by scanning imaging is yellow.

[0151] Or, for example, see Figure 9 In the functional device region S, among the multiple photoelectric sensors M, each photoelectric sensor M can simultaneously absorb red light and green light (i.e., Figure 9 The fourth photoelectric sensor M4 can also identify and detect targets, or achieve yellow (a mixture of red and green) scanning imaging, that is, the image obtained by scanning imaging is yellow.

[0152] For example, the at least one photoelectric sensor M can absorb three colors, thereby enabling the identification and detection of targets such as fingerprints, as well as full-color scanning imaging and other functions.

[0153] For example, see Figure 10 Among the multiple photoelectric sensors M in the functional device area S, some photoelectric sensors M can only absorb red light (i.e., the first photoelectric sensor M1), some photoelectric sensors M can only absorb green light (i.e., the second photoelectric sensor M2), and some photoelectric sensors M can only absorb blue light (i.e., the third photoelectric sensor M3). This allows the multiple photoelectric sensors M in the functional device area S to absorb red, green, and blue light, thereby enabling the identification and detection of target objects, or to achieve full-color scanning imaging. That is, the image obtained by scanning imaging can display all the colors of the scanned image, and the realism of the scanning imaging is high.

[0154] Or, for example, see Figure 11 Among the multiple photoelectric sensors M within the functional device region S, some photoelectric sensors M are capable of simultaneously absorbing blue light and green light (i.e., ...Figure 11 In other words, in the case that the light absorption pattern 303B of one photoelectric sensor M is capable of absorbing three colors of light (i.e., the fifth photoelectric sensor M5 in FIG. 3B), or in the case that only part of the photoelectric sensors M are capable of absorbing red light (i.e., the first photoelectric sensor M1 in FIG. 3B), the multiple photoelectric sensors M in the functional device area S can be capable of absorbing red, green and blue light, so that the identification and detection of the target object can be achieved, or full-color scanning imaging can be achieved.

[0155] Alternatively, for example, referring to Figure 12 , each of the multiple photoelectric sensors M in the functional device area S can be capable of simultaneously absorbing red, green and blue light (i.e., the sixth photoelectric sensor M6 in FIG. 3B), so that the identification and detection of the target object can be achieved, or full-color scanning imaging can be achieved. Figure 12

[0156] According to the foregoing description, it can be known that, in the display device 1000 provided by the embodiments of the present disclosure, the photoelectric sensor M can perform full-color scanning imaging, and in the case that the light absorption pattern 303B of one photoelectric sensor M is capable of absorbing three colors of light, the simultaneous shooting of red, blue and green light of the target object can be achieved in the scanning imaging process, so that the shooting of different colors in a time-division manner and then the synthesis of a color image can be avoided, and the efficiency of scanning imaging is greatly improved.

[0157] In some embodiments, as Figure 7 indicated, in the case that the light absorption pattern 303B of one photoelectric sensor M is capable of absorbing one color of light, the photoelectric sensor M capable of absorbing the target color of light is arranged adjacent to the sub-pixel P capable of emitting the target color of light.

[0158] It should be noted that the foregoing target color of light can be one of red light, blue light and green light.

[0159] For example, the photoelectric sensor M capable of absorbing red light is arranged adjacent to the sub-pixel P capable of emitting red light, the photoelectric sensor M capable of absorbing green light is arranged adjacent to the sub-pixel P capable of emitting green light, and the photoelectric sensor M capable of absorbing blue light is arranged adjacent to the sub-pixel P capable of emitting blue light.

[0160] For example, referring to Figure 10 , the multiple sub-pixels P can include a first sub-pixel P1, a second sub-pixel P2 and a third sub-pixel P3, the first sub-pixel P1 can emit red light, the second sub-pixel P2 can emit green light, and the third sub-pixel P3 can emit blue light. The multiple photoelectric sensors M can include a first photoelectric sensor M1, a second photoelectric sensor M2 and a third photoelectric sensor M3, the first photoelectric sensor M1 can absorb red light, the second photoelectric sensor M2 can absorb green light, and the third photoelectric sensor M3 can absorb blue light. ​

[0161] The first photoelectric sensor M1 is arranged adjacent to the first sub-pixel P1, the second photoelectric sensor M2 is arranged adjacent to the second sub-pixel P2, and the third photoelectric sensor M3 is arranged adjacent to the third sub-pixel P3.

[0162] By arranging the photoelectric sensor M capable of absorbing the target color light adjacent to the sub-pixel P capable of emitting the target color light, the absorption efficiency of the photoelectric sensor M for the target color light is enhanced, the photoelectric sensor M is prevented from being disturbed by light other than the target color light, and the function implementation effect of the photoelectric sensor M is optimized, for example, the speed and accuracy of fingerprint recognition are improved.

[0163] In some embodiments, as shown in Figure 9 , in the case that the light absorption pattern 303B of one photoelectric sensor M can absorb two colors of light, the photoelectric sensor M capable of absorbing the first target color light and the second target color light is arranged between the sub-pixel P capable of emitting the first target color light and the sub-pixel P capable of emitting the second target color light.

[0164] It should be noted that the aforementioned first target color light can be one of red light, blue light and green light, and the aforementioned second target color light can be another one of red light, blue light and green light.

[0165] For example, referring to Figure 9 , the photoelectric sensor M can absorb red light and green light at the same time, and the photoelectric sensor M is arranged between the first sub-pixel P1 (which can emit red light) and the second sub-pixel P2 (which can emit green light).

[0166] By the foregoing arrangement, the absorption efficiency of the photoelectric sensor M for the first target color light and the second target color light is enhanced, the photoelectric sensor M is prevented from being disturbed by light other than the first target color light and the second target color light, and the function implementation effect of the photoelectric sensor M is optimized, for example, the speed and accuracy of fingerprint recognition are improved.

[0167] In some embodiments, referring to Figure 12 , the light absorption pattern 303B of one photoelectric sensor M can absorb three colors of light, and the three colors of light include red light, blue light and green light. The photoelectric sensor M capable of absorbing the three colors of light is arranged adjacent to any one sub-pixel P.

[0168] For example, as shown in Figure 12 , the light absorption pattern 303B of one photoelectric sensor M can absorb three colors of light, and the three colors of light include red light, blue light and green light. The photoelectric sensor M capable of absorbing the three colors of light is arranged adjacent to the sub-pixel P capable of emitting green light (i.e., the second sub-pixel P2).

[0169] For example, the photoelectric sensor M can simultaneously absorb red light, blue light and green light, and the photoelectric sensor M is arranged between the first sub-pixel P1 (which can emit red light) and the second sub-pixel P2 (which can emit green light) (see Figure 12 ). Alternatively, the photoelectric sensor M is arranged between the third sub-pixel P3 (which can emit blue light) and the second sub-pixel P2 (which can emit green light).

[0170] Through the foregoing arrangement, the absorption efficiency of the photoelectric sensor M for green light can be enhanced while full-color scanning imaging is achieved, and the functional implementation effect of the photoelectric sensor M is optimized, for example, the color accuracy of the image after scanning imaging by the photoelectric sensor M is improved.

[0171] In some embodiments, the arrangement of the plurality of sub-pixels P is different, and the arrangement position of the photoelectric sensor M is different.

[0172] For example, referring to Figure 13 , the plurality of sub-pixels P are arranged in Real RGB, and the photoelectric sensor M can be arranged between the adjacent first sub-pixel P1, second sub-pixel P2 and third sub-pixel P3.

[0173] In the case that the photoelectric sensor M can simultaneously absorb red light, blue light and green light (i.e., the sixth photoelectric sensor M6), arranging the photoelectric sensor M between the adjacent first sub-pixel P1, second sub-pixel P2 and third sub-pixel P3 can ensure that the photoelectric sensor M uniformly absorbs red light, blue light and green light, and avoid the problem that the photoelectric sensor M does not sufficiently absorb one of red light, blue light and green light, resulting in color deviation of the image after imaging, thereby facilitating the photoelectric sensor M to realize color imaging in the scanning imaging process, and improving the color accuracy of the image after scanning imaging.

[0174] In some embodiments, the photoelectric sensor M can be arranged around the sub-pixel P, for example, four photoelectric sensors M are arranged around one sub-pixel P, and the four photoelectric sensors M are arranged in an array along the first direction and the second direction. For example, the photoelectric sensor M needs to absorb red light, and a plurality of photoelectric sensors M are arranged around the sub-pixel P which can emit red light, thereby improving the intensity of the red light that the photoelectric sensor M can absorb.

[0175] With the development of display technology, the requirements for various functions of the display device 1000 are becoming higher and higher, for example, the requirements for the response speed and accuracy of the fingerprint identification of the display device 1000 are becoming higher and higher. Therefore, the various performances of the photoelectric sensor M provided in the foregoing embodiments are severely challenged.

[0176] In order to improve the performance of the photoelectric sensor M, some embodiments of this disclosure have made the following design to the structure of the aforementioned display panel 100.

[0177] In some embodiments, such as Figure 6 As shown, the light-absorbing pattern 303B includes a sub-light-absorbing pattern 303B', which is capable of absorbing light of at least one color.

[0178] For example, the sub-absorbent pattern 303B' can absorb one of red, blue, and green light. For instance, it can absorb only green light, so that a photoelectric sensor M absorbs only one color of light.

[0179] When the light-absorbing pattern 303B can only absorb one color, the photoelectric sensor M is configured to realize the recognition function of fingerprints, palm prints, irises or faces, or to realize the scanning imaging function of a single color.

[0180] For example, the sub-absorbent pattern 303B' can absorb two of the following: red light, blue light, and green light. For instance, it can absorb both red and blue light simultaneously, thus enabling a photoelectric sensor M to absorb both colors of light at the same time.

[0181] When the light-absorbing pattern 303B can absorb two colors simultaneously, the photoelectric sensor M is configured to realize the recognition function of fingerprints, palm prints, irises or faces, or to realize the scanning imaging function of specific colors.

[0182] For example, the sub-absorbent pattern 303B' can absorb red light, blue light and green light at the same time, so that a photoelectric sensor M can absorb three colors of light at the same time.

[0183] When the light-absorbing pattern 303B can simultaneously absorb red light, blue light and green light, the photoelectric sensor M is configured to realize the recognition function of fingerprint, palm print, iris or face, or realize the full-color scanning imaging function.

[0184] In some embodiments, such as Figure 14 As shown, the light-absorbing pattern 303B includes a plurality of sub-light-absorbing patterns 303B' stacked along a direction perpendicular to the substrate 21, and each sub-light-absorbing pattern 303B' is capable of absorbing light of at least one color.

[0185] For example, the sub-light-absorbing patterns 303B' arranged adjacently in a direction perpendicular to the substrate 21 are electrically contacted directly or indirectly to realize the series connection between multiple sub-light-absorbing patterns 303B', thereby ensuring that the photoelectric sensor M is in the conducting state.

[0186] By setting the multiple layers of the sub-light-absorbing patterns 303B', the light-absorbing intensity of the photoelectric sensor M to the returned light can be greatly improved under a relatively small current drive, which can improve the functional implementation effect of the photoelectric sensor M, and on the other hand, the driving current in the photoelectric sensor M is small, which can prolong the service life.

[0187] In some embodiments, as shown in FIG. 3B, the light-absorbing pattern 303B includes two sub-light-absorbing patterns 303B' stacked in a direction perpendicular to the substrate 21. Figure 14 Figure 14 The light-absorbing pattern 303B includes a first sub-light-absorbing pattern 303B1 and a second sub-light-absorbing pattern 303B2.

[0188] Exemplarily, the light-absorbing pattern 303B can absorb one of red light, blue light, and green light.

[0189] In this case, the color of the light that the first sub-light-absorbing pattern 303B1 can absorb is the same as the color of the light that the second sub-light-absorbing pattern 303B2 can absorb. For example, the first sub-light-absorbing pattern 303B1 and the second sub-light-absorbing pattern 303B2 can both only absorb blue light, or both only absorb green light.

[0190] Exemplarily, the light-absorbing pattern 303B can absorb two of red light, blue light, and green light.

[0191] In this case, the color of the light that the first sub-light-absorbing pattern 303B1 can absorb is the same as the color of the light that the second sub-light-absorbing pattern 303B2 can absorb.

[0192] For example, the light-absorbing pattern 303B can absorb green light and red light, wherein the first sub-light-absorbing pattern 303B1 can simultaneously absorb green light and red light, and the second sub-light-absorbing pattern 303B2 can also simultaneously absorb green light and red light.

[0193] Alternatively, exemplarily, in the case where the light-absorbing pattern 303B can absorb two of red light, blue light, and green light, the color of the light that the first sub-light-absorbing pattern 303B1 can absorb is not completely the same as the color of the light that the second sub-light-absorbing pattern 303B2 can absorb.

[0194] For example, the first sub-light-absorbing pattern 303B1 can absorb green light, and the second sub-light-absorbing pattern 303B2 can absorb red light. Alternatively, for example, the first sub-light-absorbing pattern 303B1 can absorb green light, and the second sub-light-absorbing pattern 303B2 can absorb red light.

[0195] ​Exemplarily, the light-absorbing pattern 303B can absorb red light, blue light, and green light.

[0196] Exemplarily, in a case where the light-absorbing pattern 303B can absorb red light, blue light, and green light, the color of light that the first sub light-absorbing pattern 303B1 can absorb and the color of light that the second sub light-absorbing pattern 303B2 can absorb are the same.

[0197] For example, the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can each simultaneously absorb red light, blue light, and green light.

[0198] Alternatively, exemplarily, in a case where the light-absorbing pattern 303B can absorb red light, blue light, and green light, the color of light that the first sub light-absorbing pattern 303B1 can absorb and the color of light that the second sub light-absorbing pattern 303B2 can absorb are not completely the same.

[0199] For example, one of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb red light and blue light, and the other of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb green light.

[0200] For example, one of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb red light and green light, and the other of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb blue light.

[0201] For example, one of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb blue light and green light, and the other of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb red light.

[0202] For example, one of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb green light and red light, and the other of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb green light and blue light.

[0203] For example, one of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb green light, and the other of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb red light, blue light, and green light.

[0204] For example, one of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb green light and blue light, and the other of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can absorb red light, blue light, and green light.

[0205] It should be noted that the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can be replaced with each other, for example, the second sub light-absorbing pattern 303B2 can be arranged closer to the substrate 21 or farther away from the substrate 21 relative to the first sub light-absorbing pattern 303B1.

[0206] Exemplarily, the absorbable light of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 are complementary to each other, that is, the absorbable light of the first sub light-absorbing pattern 303B1 and the absorbable light of the second sub light-absorbing pattern 303B2 mixed together can be white light. For example, the first sub light-absorbing pattern 303B1 can absorb blue-green light, and the second sub light-absorbing pattern can absorb red light.

[0207] By arranging the absorbable light of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 to be complementary to each other, the light-absorbing pattern 303B formed by the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can realize full-color scanning imaging.

[0208] In some embodiments, the wavelength ranges of the absorbable light of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 are substantially the same. Thus, the colors of the absorbable light of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 are substantially the same.

[0209] For example, the wavelength ranges of the absorbable light of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 are both substantially 510nm-560nm, for example, the wavelength is 530nm. That is, the colors of the absorbable light of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 are both green light.

[0210] For example, the wavelength ranges of the absorbable light of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 are both substantially 430nm-560nm. That is, the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can both absorb blue light and green light at the same time.

[0211] For example, the wavelength ranges of the absorbable light of the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 are both substantially 393nm-763nm, that is, the first sub light-absorbing pattern 303B1 and the second sub light-absorbing pattern 303B2 can both absorb red light, blue light and green light at the same time.

[0212] In some embodiments, the first sub-light-absorbing pattern 303B1 and the second sub-light-absorbing pattern 303B2 can absorb light in different wavelength ranges. Thus, the first sub-light-absorbing pattern 303B1 and the second sub-light-absorbing pattern 303B2 can absorb light of different colors.

[0213] For example, the first sub-light-absorbing pattern 303B1 can absorb light in a wavelength range of about 430 nm to 560 nm, and the second sub-light-absorbing pattern 303B2 can absorb light in a wavelength range of about 510 nm to 660 nm. Thus, the first sub-light-absorbing pattern 303B1 can absorb blue light and green light, and the second sub-light-absorbing pattern 303B2 can absorb red light and green light.

[0214] In some embodiments, the light-absorbing pattern 303B that can absorb light of different colors corresponds to different bandgaps of the material.

[0215] For example, the light-absorbing pattern 303B that can absorb red light can correspond to a bandgap of 1.92, the light-absorbing pattern 303B that can absorb blue light can correspond to a bandgap of 2.61, and the light-absorbing pattern 303B that can absorb green light can correspond to a bandgap of 2.3. By adjusting the bandgap of the light-absorbing pattern 303B, the wavelength range of light that can be absorbed by the light-absorbing pattern 303B can be controlled, thereby obtaining a light-absorbing pattern 303B that can absorb light of different colors.

[0216] In addition, by reducing the bandgap of the light-absorbing pattern 303B, for example, the light-absorbing pattern 303B can absorb green light, and reducing the bandgap of the light-absorbing pattern 303B during absorption of green light can reduce the absorption of stray light other than green light, thereby improving the purity and efficiency of absorption of green light.

[0217] For example, in the case where the light-absorbing pattern 303B includes a plurality of sub-light-absorbing patterns 303B', the bandgaps of different sub-light-absorbing patterns 303B' can be the same. For example, in the case where the plurality of sub-light-absorbing patterns 303B' each absorb light of only one color, the bandgaps of the plurality of sub-light-absorbing patterns 303B' are the same, thereby improving the purity of the light absorbed by each sub-light-absorbing pattern 303B' and avoiding interference from stray light.

[0218] Exemplarily, in a case where the light-absorbing pattern 303B includes a plurality of sub light-absorbing patterns 303B', the bandgaps of different sub light-absorbing patterns 303B' can not be completely same. For example, in a case where the light-absorbing pattern 303B can absorb red light and green light, the bandgap of one of the plurality of sub light-absorbing patterns 303B' can be a wide bandgap, which can simultaneously absorb red light and green light, and the other can be a narrow bandgap, which can only absorb green light, so as to improve the absorption rate of green light in a case where the light-absorbing pattern 303B absorbs red light and green light, thereby realizing a small range adjustment of the color of the absorbable light.

[0219] In some embodiments, the material of the light-absorbing pattern 303B can include a perovskite-based semiconductor material. For example, the light-absorbing pattern 303B is a halide perovskite material. For example, the material of the light-absorbing pattern 303B includes an organic-inorganic hybrid perovskite and an all-inorganic perovskite.

[0220] The perovskite material has the characteristic of adjustable bandgap, and the wavelength range of the absorbable light of the light-absorbing pattern 303B can be controlled by adjusting the bandgap of the perovskite material, so as to obtain a light-absorbing pattern 303B capable of absorbing light of different colors.

[0221] In some embodiments, the molecular formula of the material of the light-absorbing pattern 303B is RNH3BY 3-m X m .

[0222] Wherein, R is C n H 2n+1 , for example, can be CH3. B is a metal element, for example, can be Pb, Sn and other metal elements. X and Y are different halogen elements, for example, can be Cl, Br, I and the like. m and n are integers.

[0223] For example, the molecular formula of the material of the light-absorbing pattern 303B can be C3H7NH3SnICl2, C4H9NH3PbBrCl2, C5H 11 NH3SnI2Cl, C3H7NH3SnCl3 or C6H 13 NH3PbIBr2.

[0224] Exemplarily, the material of the light-absorbing pattern 303B can be synthesized by a double-source co-evaporation method in one step, and the equation is as follows:

[0225] RNH3X+BY→RNH3BY 3-m X m

[0226] Wherein, the evaporation temperature of RNH3X is about 120°C, and the melting point temperature of BY is about 420°C. The co-evaporation method has no by-product, and only generates RNH3BY 3-m Xm .

[0227] The light-absorbing pattern 303B capable of absorbing different colors of light corresponds to different mass ratios of X and Y of the corresponding material.

[0228] Exemplarily, by controlling the mass ratio of X and Y, the adjustable range of the band gap of the light-absorbing pattern 303B can be 1.15eV-3.1eV, so that the range of the maximum absorption wavelength of the light-absorbing pattern 303B is 393nm-763nm, that is, the light-absorbing pattern 303B can satisfy the separate absorption or simultaneous absorption of red light, blue light, and green light, which is beneficial to realize full-color scanning imaging of the photoelectric sensor M.

[0229] Exemplarily, the adjustment of the aforementioned band gap can be realized by controlling the bond length and bond angle of the perovskite material, or adjusting the chemical bond, or adjusting the proportion of atoms in the perovskite.

[0230] For example, other organic cations can be used instead of the cation RNH3 + , so as to change the bond length and bond angle in the perovskite molecular structure, and further change the band gap. Alternatively, by adjusting the chemical bond, for example, replacing part of Pb 2+ in CH3NH3PbI3 with Sn 2+ , so that the band gap is reduced from 1.55 to 1.17, etc. Alternatively, by changing the proportion of atoms in RNH3BY 3-m X m , the adjustment of the band gap is realized.

[0231] It should be noted that the foregoing embodiments of the present disclosure only exemplify the materials of the light-absorbing pattern 303B, and do not limit the specific material components thereof. Any material that can realize the effects (including wavelength, gap, color of absorbable light, etc.) of the light-absorbing pattern 303B described in any one of the foregoing embodiments is within the protection scope of the present disclosure.

[0232] In some embodiments, as shown in Figure 14 , the display panel 100 further includes a second heterojunction 305B.

[0233] The second heterojunction 305B is arranged between two adjacent sub-light-absorbing patterns 303B', and the second heterojunction 305B is configured to improve the conduction efficiency of carriers between the two adjacent sub-light-absorbing patterns 303B', and enhance the light absorption intensity and reaction speed of the photoelectric sensor M.

[0234] Exemplarily, in the case where the light-absorbing pattern 303B includes a plurality of sub-light-absorbing patterns 303B', the second heterojunction 305B is arranged between each two adjacent sub-light-absorbing patterns 303B'.

[0235] Exemplarily, as shown in Figure 14 In the case where the light-absorbing pattern 303B includes a first sub-light-absorbing pattern 303B1 and a second sub-light-absorbing pattern 303B2, the second heterojunction 305B is arranged between the first sub-light-absorbing pattern 303B1 and the second sub-light-absorbing pattern 303B2.

[0236] In some embodiments, as shown in Figure 15 The light-emitting pattern 303A includes a first sub-light-emitting pattern 303A1 and a second sub-light-emitting pattern 303A2 arranged in a stacking manner along a direction perpendicular to the substrate 21.

[0237] Exemplarily, the first sub-light-emitting pattern 303A1 and the second sub-light-emitting pattern 303A2 are directly or indirectly electrically connected, i.e., the first sub-light-emitting pattern 303A1 and the second sub-light-emitting pattern 303A2 are connected in series.

[0238] By arranging the first sub-light-emitting pattern 303A1 and the second sub-light-emitting pattern 303A2 in series, the light-emitting current of the sub-pixel P can be greatly reduced under the same light-emitting intensity, the service life of the sub-pixel P is improved, and the development and production of high-service-life new technologies such as vehicle-mounted devices are facilitated.

[0239] Exemplarily, referring to Figure 15 The display panel 100 further includes a first heterojunction 305A arranged between the first sub-light-emitting pattern 303A1 and the second sub-light-emitting pattern 303A2.

[0240] The first heterojunction 305A is configured to improve the conduction efficiency of the carriers between the first sub-light-emitting pattern 303A1 and the second sub-light-emitting pattern 303A2, thereby optimizing the light-emitting display effect of the display panel 100.

[0241] Exemplarily, referring to Figure 15 In the case where the display panel 100 includes both the first heterojunction 305A and the second heterojunction 305B, the first heterojunction 305A is connected with and integrally arranged with the second heterojunction 305B. For example, the first heterojunction 305A is integrally formed with the second heterojunction 305B.

[0242] Exemplarily, the aforementioned heterojunction (including the first heterojunction 305A and the second heterojunction 305B) includes at least two layers of semiconductor thin films. For example, referring to Figure 14 and Figure 15 The aforementioned heterojunction includes a first semiconductor thin film P-CGL and a second semiconductor thin film N-CGL.

[0243] Exemplarily, the materials of the first semiconductor thin film P-CGL and the second semiconductor thin film N-CGL can be compounds such as gallium arsenide, or semiconductor alloys such as silicon-germanium.

[0244] By setting the first heterojunction 305A and the second heterojunction 305B, the conduction efficiency of the carriers in the photoelectric sensor M is improved, thereby enhancing the sensing sensitivity of the photoelectric sensor M, so that the light absorption effect of the photoelectric sensor M and the light emission effect of the sub-pixel P in the display panel 100 are both optimized.

[0245] In the light absorption process of the photoelectric sensor M, the absorption amount of stray light will affect the absorption efficiency of the effective return light. Among them, the stray light refers to other light except the return light emitted by the sub-pixel P and reflected by the target object. For example, the stray light can be light outside the display device 1000, or light reflected by the second electrode layer 304 after the light emitted by the sub-pixel P, or light directly irradiated into the light absorption pattern 303B after the light emitted by the sub-pixel P without being reflected by the target object. The more the stray light, the greater the influence on the accuracy of detection, identification or scanning imaging of the photoelectric sensor M. In order to solve the above technical problems, the following embodiments are provided in the present disclosure.

[0246] In some embodiments, the ratio of the area of the first opening K1 to the area of the second opening K2 is approximately 1-3.5. For example, the ratio of the area of the first opening K1 to the area of the second opening K2 is approximately 1.75-2. For example, the ratio of the area of the first opening K1 to the area of the second opening K2 is approximately 1, 1.3, 1.75, 2, 2.05, 2.987, 3 or 3.5.

[0247] It should be noted that the aforementioned "area of the first opening K1" is the area of the cross section of the first opening K1 in the direction parallel to the substrate 21, and the aforementioned "area of the second opening K2" is the area of the cross section of the second opening K2 in the direction parallel to the substrate 21.

[0248] For example, the area of the first opening K1 can be 64 μm 2 -196 μm 2 , for example 64 μm 2 , 70 μm 2 , 85 μm 2 , 90.12 μm 2 , 150.5 μm 2 or 196 μm 2 .

[0249] For example, the area of the second opening K2 can be 16 μm 2 -64 μm 2 , for example 16 μm 2 , 20 μm 2 , 35 μm 2 , 40.5 μm 2 , 51.65 μm 2 or 64 μm2 .

[0250] By setting the ratio of the area of the first opening K1 to the area of the second opening K2 to be approximately 1-3.5, the second opening K2 is limited in area while achieving sufficient absorption of the return light by the light-absorbing pattern 303B, thereby maximizing the avoidance of absorption of stray light, for example, by avoiding excessive entry of stray light from outside the display device 1000 into the second opening K2, thereby reducing the interference of stray light with the function of the photosensor M.

[0251] In some embodiments, as shown in Figure 16 , the display panel 100 further includes a first light-shielding pattern 401 and a cover plate 402.

[0252] Referring to Figure 16 , the cover plate 402 is disposed on the side of the second electrode layer 304 away from the substrate 21.

[0253] The cover plate 402 is configured to form a protective shell with the U-shaped groove-shaped housing of the display device 1000, and all structural components in the display device 1000 are disposed in the protective shell.

[0254] Referring to Figure 16 , the first light-shielding pattern 401 is disposed on the side of the second electrode layer 304 away from the substrate 21. The first light-shielding pattern 401 is disposed between the second electrode layer 304 and the cover plate 402.

[0255] Exemplarily, the first light-shielding pattern 401 and the cover plate 402 are attached together by optical glue.

[0256] Exemplarily, the first light-shielding pattern 401 is configured to shield stray light from outside the display device 1000 from entering the display device 1000, thereby reducing the interference of stray light with the light emission of the sub-pixel P and reducing the interference of stray light with the light absorption of the photosensor M.

[0257] Exemplarily, the material of the first light-shielding pattern 401 can be a material that can absorb visible light.

[0258] Exemplarily, the material of the first light-shielding pattern 401 can include a metal material, or can include a resin material doped with a pigment (such as carbon black) or a dye, thereby achieving the purpose of light shielding.

[0259] Exemplarily, the first light-shielding pattern 401 can further include a red filter, a green filter, and a blue filter stacked in a direction perpendicular to the substrate 21, thereby achieving the shielding of external visible light.

[0260] Exemplarily, referring to Figure 17, the first light-shielding pattern 401 is arranged on the entire display panel 100, i.e., the first light-shielding pattern 401 is arranged on the entire display panel 100 except for the functional device area S where the photosensor M is arranged, effectively improving the ability of the first light-shielding pattern 401 to shield external light of the display device 1000 and improving the light-emitting display effect of the display device 1000.

[0261] With reference to Figure 16 and Figure 17 , the first light-shielding pattern 401 is provided with a third opening K3 and a fourth opening K4, the third opening K3 is arranged corresponding to the light-emitting pattern 303A, and the fourth opening K4 is arranged corresponding to the light-absorbing pattern 303B.

[0262] That is, the third opening K3 exposes the sub-pixel P, avoiding the first light-shielding pattern 401 from blocking the light-emitting path of the sub-pixel P, and the fourth opening K4 exposes the photosensor M, avoiding the first light-shielding pattern 401 from blocking the path of the return light (light reflected by the target object after being emitted by the sub-pixel P) absorbed by the photosensor M.

[0263] Through the foregoing arrangement, the first light-shielding pattern 401 can shield external light of the display device 1000 from entering the display panel 100 while satisfying the light-emitting of the sub-pixel P and the light-absorbing of the photosensor M, reducing the interference of stray light on the sub-pixel P and the photosensor M, thereby improving the absorption efficiency of the effective light, i.e., the return light, of the light-absorbing pattern 303B and improving the sensitivity of the photosensor M.

[0264] On the basis of the foregoing embodiment, with reference to Figure 18 , the ratio between the vertical distance d1 from the surface of the substrate 21 to the surface of the cover plate 402 of the first light-shielding pattern 401 and the vertical distance d2 from the surface of the substrate 21 to the light-absorbing pattern 303B is about 1.8-2.8. For example, the ratio is 1.8, 2, 2.56, or 2.8.

[0265] Exemplarily, the vertical distance d1 from the surface of the substrate 21 to the surface of the cover plate 402 of the first light-shielding pattern 401 can be 756 μm, 800.5 μm, 953.75 μm, or 1176 μm.

[0266] Exemplarily, the vertical distance d2 from the surface of the substrate 21 to the light-absorbing pattern 303B of the first light-shielding pattern 401 can be 420 μm, 500.5 μm, or 653.33 μm.

[0267] According to the structure in the foregoing embodiments, the target object is placed on the side of the cover plate 402 away from the substrate 21, the light emitted by the sub-pixel P passes through the first opening K1, the third opening K3 and the cover plate 402 in sequence to reach the target object, and the return light is formed after being reflected by the target object, the return light passes through the cover plate 402, the fourth opening K4 and the second opening K2 in sequence to reach the light absorption pattern 303B, and the light absorption of the photosensor M is realized.

[0268] By setting the ratio between the vertical distance d1 and the vertical distance d2 to be about 1.8-2.8, that is, controlling the ratio of the distance between the target object and the first light shielding pattern 401 to the distance between the light absorption pattern 303B and the first light shielding pattern 401, the number of return lights that can reach the light absorption pattern 303B can be controlled, and the area of the effective region of the target object that can be scanned or recognized by the photosensor M can be controlled, without changing the size of the fourth opening K4.

[0269] In some embodiments, as shown in Figure 18 , the smallest included angle θ1 between the side wall of the fourth opening K4 and the line connecting the fourth opening K4 and the light absorption pattern 303B corresponding to the fourth opening K4 is about 40°-60°. For example, the smallest included angle θ1 is about 40°, 45°, 53.5°, 57.85° or 60°.

[0270] Exemplarily, there can be multiple lines between the side wall of the fourth opening K4 and the light absorption pattern 303B corresponding to the fourth opening K4, and the line that can form the smallest included angle θ1 with the light absorption pattern 303B can be the line between the side wall of the fourth opening K4 and the position of the light absorption pattern 303B that is in contact with the side wall of the second opening K2 (see Figure 18 ).

[0271] By the foregoing setting, the ratio of the distance between the first light shielding pattern 401 and the target object to the distance between the first light shielding pattern 401 and the light absorption pattern 303B can be limited, so that the number of return lights that can reach the light absorption pattern 303B can be controlled, and the area of the effective region of the target object that can be scanned or recognized by the photosensor M can be controlled, without changing the size of the fourth opening K4.

[0272] In some embodiments, as shown in Figure 19 , the display panel 100 further comprises a second light shielding pattern 403.

[0273] Referring to Figure 19 , the second light shielding pattern 403 is arranged between the substrate 21 and the second electrode layer 304.

[0274] The second light shielding pattern 403 can be configured to absorb light emitted by the sub-pixel P and reflected by the second electrode layer 304, which does not pass through the target object and thus does not carry information about the target object, and when the light is incident on the light absorption pattern 303B, it will interfere with the identification process of the photosensitive sensor M. By arranging the second light shielding pattern 403, the amount of stray light can be effectively reduced, thereby improving the identification accuracy of the photosensitive sensor M.

[0275] Referring to Figure 19 , the second light shielding pattern 403 is located between the light absorption pattern 303B and the light emission pattern 303A adjacent to the light absorption pattern 303B.

[0276] The second light shielding pattern 403 can also be configured to prevent light emitted by the sub-pixel P from directly reaching the light absorption pattern 303B without reflection, thereby interfering with the identification detection process of the photosensitive sensor M. By arranging the second light shielding pattern 403 between the light absorption pattern 303B and the light emission pattern 303A, the second light shielding pattern 403 can block light emitted by the sub-pixel P from directly illuminating the light absorption pattern 303B in a direction parallel to the substrate 21, thereby reducing the amount of stray light and improving the functional implementation effect of the photosensitive sensor M.

[0277] Referring to Figure 19 , the vertical distance from the surface of the substrate 21 to the second light shielding pattern 403 is greater than or equal to the vertical distance from the surface of the substrate 21 to the light absorption pattern 303B and the light emission pattern 303A. Specifically, the vertical distance from the surface of the substrate 21 to the second light shielding pattern 403 is greater than or equal to the vertical distance from the surface of the substrate 21 to the part of the light absorption pattern 303B located in the second opening K2, and greater than or equal to the vertical distance from the surface of the substrate 21 to the part of the light emission pattern 303A located in the first opening K1.

[0278] That is, in a direction perpendicular to the substrate 21, the second light shielding pattern 403 is higher than the plane where the light absorption pattern 303B and the light emission pattern 303A are located, so that light emitted by the sub-pixel P and transmitted in a direction approximately parallel to the substrate 21 can be sufficiently blocked by the second light shielding pattern 403, thereby reducing the interference of stray light with the photosensitive sensor M.

[0279] It should be noted that the second light shielding pattern 403 is arranged between the substrate 21 and the second electrode layer 304, and the present disclosure does not limit the specific arrangement of the film layer position of the second light shielding pattern 403.

[0280] For example, the second light shielding pattern 403 is arranged between the pixel defining layer 302 and the second electrode layer 304.

[0281] Alternatively, the second light-shielding pattern 403 is disposed in the film layer in which the pixel defining layer 302 is disposed, i.e., the second light-shielding pattern 403 is embedded in the pixel defining layer 302.

[0282] Alternatively, as shown in Figure 19 , the second light-shielding pattern 403 is disposed between the first electrode layer 301 and the second electrode layer 304 on the side of the first electrode layer 301 close to the substrate 21, i.e., the second light-shielding pattern 403 penetrates the second electrode layer 304 and the pixel defining layer 302, thereby further enhancing the blocking effect of the second light-shielding pattern 403 on the light emitted by the sub-pixel P and propagating in a direction substantially parallel to the substrate 21, and reducing the interference of stray light with the photosensor M.

[0283] In some embodiments, as shown in Figure 20 , the aforementioned second light-shielding pattern 403 is disposed in the functional device area S of the display panel 100 in which the photosensor M is disposed, thereby ensuring the blocking ability of the second light-shielding pattern 403 to stray light and improving the functional implementation effect of the photosensor M.

[0284] In some embodiments, as shown in Figure 20 , the orthographic projection of the second light-shielding pattern 403 on the substrate 21 avoids the orthographic projection of the first opening K1 and the second opening K2 on the substrate 21, i.e., avoids blocking the path of the light emitted by the sub-pixel P and the path of the return light absorbed by the photosensor M.

[0285] For example, as shown in Figure 20 , the second light-shielding pattern 403 can be integrally formed, and the second light-shielding pattern 403 is provided with a plurality of fifth openings K5, which are disposed corresponding to the first openings K1 or the second openings K2, thereby achieving the blocking effect of the second light-shielding pattern 403 to stray light while avoiding blocking the light emitting path of the sub-pixel P and the light absorbing path of the photosensor M.

[0286] For example, as shown in Figure 21 , the display panel 100 includes a plurality of second light-shielding patterns 403, each of which is disposed between the photosensor M and the sub-pixel P.

[0287] In some embodiments, as shown in Figure 14 , Figure 15 , the display panel 100 further includes an encapsulation layer 24 disposed on the side of the second electrode layer 304 away from the substrate 21.

[0288] The refractive index of the encapsulation layer 24 is 1.5-1.8. For example, the refractive index of the encapsulation layer 24 is 1.5, 1.56, 1.652, 1.7, or 1.8.

[0289] Exemplarily, the encapsulation layer 24 can include a first encapsulation sub-layer, a second encapsulation sub-layer and a third encapsulation sub-layer which are sequentially stacked away from the substrate 21. Exemplarily, the materials of the first encapsulation sub-layer and the third encapsulation sub-layer include inorganic materials, and the material of the second encapsulation sub-layer includes an organic material. The first encapsulation sub-layer and the third encapsulation sub-layer have the function of blocking water vapor and oxygen, and the second encapsulation sub-layer has the functions of certain flexibility and water vapor absorption, etc.

[0290] Exemplarily, as shown in FIG. 4A, the first light shielding pattern 401 can be disposed in the encapsulation layer 24. Figure 16

[0291] In some embodiments, as shown in FIG. 4B, the display panel 100 further includes a second hole transport pattern 306B disposed between the second anode 301B and the light absorption pattern 303B. The second hole transport pattern 306B is configured to enhance the conduction efficiency of the carriers in the light absorption pattern 303B in the electric field formed by the second anode 301B and the second electrode layer 304. Figure 22

[0292] Exemplarily, in the case where the light absorption pattern 303B includes a plurality of sub-light absorption patterns 303B', the side of each sub-light absorption pattern 303B' close to the substrate 21 is provided with the second hole transport pattern 306B.

[0293] For example, referring to FIG. 4B, in the case where the light absorption pattern 303B includes a first sub-light absorption pattern 303B1 and a second sub-light absorption pattern 303B2, and the first sub-light absorption pattern 303B1 is closer to the substrate 21 than the second sub-light absorption pattern 303B2, the display panel 100 includes two second hole transport patterns 306B, one of which is disposed between the first sub-light absorption pattern 303B1 and the second sub-light absorption pattern 303B2, and the other of which is disposed between the first sub-light absorption pattern 303B1 and the second anode 301B. The conduction efficiency of the carriers in the light absorption pattern 303B can be further improved, thereby improving the functional implementation effect of the photoelectric sensor M, for example, improving the fingerprint recognition speed. Figure 22

[0294] In some embodiments, as shown in FIG. 4C, the display panel 100 further includes a first hole transport pattern 306A disposed between the first anode 301A and the light emission pattern 303A. The first hole transport pattern 306A is configured to enhance the conduction efficiency of the carriers in the light emission pattern 303A in the electric field formed by the first anode 301A and the second electrode layer 304. Figure 22

[0295] ​​​​Exemplarily, in a case where the light-absorbing pattern 303B includes a plurality of sub-light-absorbing patterns 303B', each of the sub-light-absorbing patterns 303B' is provided with the second hole transport pattern 306B on a side close to the substrate 21.

[0296] For example, referring to Figure 22 In a case where the light-emitting pattern 303A includes a first sub-light-emitting pattern 303A1 and a second sub-light-emitting pattern 303A2, and the first sub-light-emitting pattern 303A1 is closer to the substrate 21 than the second sub-light-emitting pattern 303A2, the display panel 100 includes two first hole transport patterns 306A, one of which is arranged between the first sub-light-emitting pattern 303A1 and the second sub-light-emitting pattern 303A2, and the other of which is arranged between the first sub-light-emitting pattern 303A1 and the first anode 301A. The conduction efficiency of the carriers in the light-emitting pattern 303A can be further improved, thereby improving the light-emitting display effect of the sub-pixel P.

[0297] Exemplarily, the sub-pixels P capable of emitting light of different colors correspond to different first hole transport patterns 306A respectively, thereby realizing control of the transport characteristics of the carriers in the sub-pixels P capable of emitting light of different colors.

[0298] The material of the first hole transport pattern 306A and the material of the second hole transport pattern 306B are different. Thus, the carriers in the sub-pixel P and the carriers in the photoelectric sensor M are controlled respectively.

[0299] In some embodiments, as Figure 23 shown, the display panel 100 further includes a first common layer 306, or the display panel 100 further includes a second common layer 307, or the display panel 100 includes both the first common layer 306 and the second common layer 307.

[0300] For example, referring to Figure 23 , the first common layer 306 is arranged between the first anode 301A and the light-emitting pattern 303A, and between the second anode 301B and the light-absorbing pattern 303B.

[0301] The first common layer 306 includes a hole transport layer and / or a hole injection layer. The first common layer 306 is configured to enhance the conduction efficiency of the carriers (e.g., holes) between the first anode 301A and the light-emitting pattern 303A, and to enhance the conduction efficiency of the carriers (e.g., holes) between the second anode 301B and the light-absorbing pattern 303B, thereby enhancing the light-emitting display effect of the sub-pixel P and the function implementation effect of the photoelectric sensor M.

[0302] For example, referring to Figure 23The second common layer 307 is arranged between the light-emitting pattern 303A and the second electrode layer 304, and between the light-absorbing pattern 303B and the second electrode layer 304.

[0303] The second common layer 307 includes an electron transport layer and / or an electron injection layer. The second common layer 307 is configured to enhance the conduction efficiency of carriers (e.g., electrons) between the light-emitting pattern 303A and the second electrode layer 304, and to enhance the conduction efficiency of carriers (e.g., electrons) between the light-absorbing pattern 303B and the second electrode layer 304, thereby enhancing the light-emitting display effect of the sub-pixel P and the function implementation effect of the photoelectric sensor M.

[0304] In some embodiments, the display panel 100 further includes a driving signal line, one end of the driving signal line being electrically connected to the second anode 301B, and the other end being electrically connected to an external processor. The driving signal line is configured to transmit a second anode signal to the second anode 301B.

[0305] The aforementioned processor is configured to be electrically connected to the photoelectric sensor M through the driving signal line, so as to drive the photoelectric sensor M to implement light absorption and to identify or image the information carried by the absorbed light. That is, the information carried by the returned light received by the photoelectric sensor M is analyzed and processed by an external structure.

[0306] In other embodiments, the structure for driving the photoelectric sensor M to implement light absorption and to analyze and process the information carried by the absorbed light can also be arranged inside the display panel 100.

[0307] In some embodiments, as shown in FIGS. Figure 14 Figure 15 or Figure 24 , the display panel 100 further includes a circuit layer 20 arranged between the substrate 21 and the first electrode layer 301.

[0308] The circuit layer 20 includes a pixel circuit 20A and a light-sensing driving circuit 20B. The pixel circuit 20A is electrically connected to the first anode 301A, and the light-sensing driving circuit 20B is electrically connected to the second anode 301B. The pixel circuit 20A is configured to drive the sub-pixel P to perform light-emitting display, and the light-sensing driving circuit 20B is configured to drive the photoelectric sensor M to perform light absorption.

[0309] By arranging the structure for driving the photoelectric sensor M to implement light absorption, i.e., the light-sensing driving circuit 20B, inside the screen, the utilization rate of the internal space of the display panel 100 can be improved, the driving speed of the photoelectric sensor M can be improved, and the function implementation effect of the photoelectric sensor M can be optimized.

[0310] In some embodiments, as shown in FIGS. Figure 24 ​As shown, the aforementioned circuit layer 20 includes an active layer 201, a gate insulating layer 202, a gate conductive layer 203, an interlayer dielectric layer 204, and a source-drain conductive layer 205 arranged in a direction perpendicular to and away from the substrate 21.

[0311] Exemplarily, the gate conductive layer 203 can include at least one layer, and correspondingly, the gate insulating layer 202 can also include at least one layer. For example, referring to Figure 24 The gate conductive layer 203 includes a first gate conductive layer 203A and a second gate conductive layer 203B, and correspondingly, the gate insulating layer 202 includes a first gate insulating layer 202A and a second gate insulating layer 202B.

[0312] Exemplarily, the source-drain conductive layer 205 can include multiple layers. For example, the source-drain conductive layer 205 includes a first source-drain conductive layer and a second source-drain conductive layer.

[0313] Exemplarily, referring to Figure 24 The circuit layer 20 can further include a planarization layer 206 arranged between the source-drain conductive layer 205 and the first electrode layer 301.

[0314] Exemplarily, in the case where the source-drain conductive layer 205 includes a first source-drain conductive layer and a second source-drain conductive layer, the planarization layer 206 includes a first planarization layer and a second planarization layer. The first planarization layer is arranged as an insulating medium between the first source-drain conductive layer and the second source-drain conductive layer, and the second planarization layer is arranged between the second source-drain conductive layer and the first electrode layer 301.

[0315] Exemplarily, the circuit layer 20 can further include a passivation layer arranged on the side of the source-drain conductive layer away from the substrate 21, which is configured to avoid corrosion and damage to the metal structure in the source-drain conductive layer.

[0316] Referring to Figure 24 The circuit layer 20 is provided with a plurality of transistors TFT and a plurality of capacitor structures Cst. The pixel circuit 20A corresponding to each sub-pixel P includes at least one transistor TFT and at least one capacitor structure Cst. Figure 24 Only one transistor TFT and one corresponding capacitor structure Cst are exemplarily shown in the figure.

[0317] The capacitor structure Cst can include a first plate Cst1 and a second plate Cst2, wherein the first plate Cst1 is located at the first gate conductive layer 203A, and the second plate Cst2 is located at the second gate conductive layer 203B.

[0318] The transistor TFT includes a gate Ta, a source Tb, a drain Tc, and an active layer pattern Td. The source Tb, the drain Tc, and the active layer pattern Td are electrically connected.

[0319] The active layer pattern Td is configured to form a channel under the control of the gate Ta, so that the source Tb and the drain Tc connected with the active layer pattern Td are conducted, thereby turning on the transistor TFT. Exemplarily, the transistor TFT further includes a portion of the first gate insulating layer 202 located between the film layer where the gate Ta is located and the film layer where the active layer pattern Td is located.

[0320] It should be noted that the control electrode of each transistor TFT is the gate Ta of the transistor, the first electrode is one of the source Tb and the drain Tc of the transistor TFT, and the second electrode is the other of the source Tb and the drain Tc of the transistor TFT. Since the source Tb and the drain Tc of the transistor TFT can be symmetrical in structure, the source Tb and the drain Tc of the transistor TFT can be indistinguishable in structure.

[0321] Exemplarily, as shown in Figure 24 , the pixel circuit 20A includes a first active layer pattern Td1, a scan signal line L1, and a first power supply line VDD1.

[0322] The first active layer pattern Td1 is located in the active layer 201, and the scan signal line L1 is located in the gate conductive layer 203, for example, in the first gate conductive layer 203A.

[0323] The overlapping part of the first active layer pattern Td1 and the scan signal line L1 forms a transistor TFT. The part of the scan signal line L1 overlapping with the first active layer pattern Td1 serves as the gate Ta of the transistor TFT, and the two ends of the part of the scan signal line L1 overlapping with the first active layer pattern Td1 serve as the source Tb and the drain Tc of the transistor TFT, respectively.

[0324] Exemplarily, the pixel circuit 20A can further include other signal lines, for example, an enable signal line or an initialization signal line, which overlap with the active layer pattern Td located in the active layer 201 to form transistors that can transmit different signals.

[0325] The at least one transistor TFT is electrically connected with the first anode 301A. The first anode 301A can be electrically connected with the source Tb or the drain Tc of the transistor TFT, so that the light-emitting pattern 303A realizes light emission under the control of the transistor TFT.

[0326] Referring to Figure 24 , the first power supply line VDD1 is located in the source-drain conductive layer 205. The first power supply line VDD1 is configured to provide a first power supply signal for the sub-pixel P, so as to drive the sub-pixel P to realize light emission display.

[0327] The first power line VDD1 is electrically connected with the at least one transistor TFT, so as to provide a power signal to the transistor TFT, and finally transmit the power signal to the first anode 301A through the transistor TFT, to realize the light-emitting display of the sub-pixel P.

[0328] In some embodiments, as shown in Figure 24 The light-sensing driving circuit 20B in the circuit layer 20 includes a diode Q and a second power line VDD2.

[0329] Referring to Figure 24 , the second power line VDD2 is located in the source-drain conductive layer 205. The second power line VDD2 is configured to provide a second power signal for the photoelectric sensor M, so as to drive the photoelectric sensor M to realize the functions of identification, detection or scanning imaging.

[0330] One end of the diode Q is electrically connected with the second anode 301B, and the other end is electrically connected with the second power line VDD2. Thus, the second power line VDD2 can successfully transmit the second power signal to the second anode 301B, to realize the light absorption of the photoelectric sensor M.

[0331] Exemplarily, the diode Q is a reverse current prevention diode. The problem of heat generation or even damage of the structure in the photoelectric sensor M caused by reverse current transmission can be avoided.

[0332] In some embodiments, as shown in Figure 24 The diode Q includes a second active layer pattern Td2, which is located in the active layer 201.

[0333] Referring to Figure 24 , the second active layer pattern Td2 includes a first component Q1 and a second component Q2 which are electrically connected, the first component Q1 is a hole type semiconductor, and the second component Q2 is an electron type semiconductor. For example, the material of the first component Q1 is P-type silicon (P-Si), and the material of the second component Q2 is N-type silicon (N-Si).

[0334] The first component Q1 is electrically connected with the second anode 301B, and the second component Q2 is electrically connected with the second power line VDD2. On the one hand, the second power line VDD2 can transmit the second power signal to the second anode 301B, so that the photoelectric sensor M realizes the functions of identification, detection or scanning identification. On the other hand, by electrically connecting the second power line VDD2 with the second component Q2, the reverse current prevention function is realized.

[0335] In some embodiments, as shown in Figure 23 and Figure 24As shown, the second electrode layer 304 may include a first cathode 304A and a second cathode 304B. The first cathode 304A corresponds to the aforementioned light-emitting pattern 303A, and the second cathode 304B corresponds to the aforementioned light-absorbing pattern 303B.

[0336] For example, such as Figure 24 As shown, the first cathode 304A and the second cathode 304B are insulated from each other, and the first cathode 304A and the second cathode 304B are respectively configured to transmit different cathode signals.

[0337] By setting the second electrode layer 304 to include a first cathode 304A and a second cathode 304B that are insulated from each other, the second electrode layer 304 can transmit different cathode signals to the sub-pixel P and the photoelectric sensor M respectively, thereby realizing independent control of the sub-pixel P and the photoelectric sensor M.

[0338] For example, the voltage difference between the first anode 301A and the first cathode 304A is approximately 8V to 16V, such as 8V, 10.5V, 13.56V, or 16V. The voltage difference between the first anode 301A and the first cathode 304A can be adjusted by setting the voltage in the first cathode 304A.

[0339] For example, the voltage difference between the second anode 301B and the second cathode 304B is approximately -2V to 8V, such as -2V, 0V, 1.5V, 4.75V, or 8V. The voltage difference between the second anode 301B and the second cathode 304B can be adjusted by setting the voltage in the second cathode 304B.

[0340] For example, such as Figure 23 As shown, the first cathode 304A and the second cathode 304B are integrally disposed, that is, the second electrode layer 304 is a single layer. In this case, the sub-pixel P and the photoelectric sensor M share the second electrode layer 304, that is, the cathode voltage signals of the sub-pixel P and the photoelectric sensor M are the same.

[0341] Based on this, by controlling the magnitude of the power signals transmitted by the first power line VDD1 and the second power line VDD2, the first anode 301A and the second anode 301B can be made to have different voltages, that is, the sub-pixel P and the photoelectric sensor M can have different voltages, thereby realizing the individual control of the sub-pixel P and the photoelectric sensor M respectively.

[0342] For example, when the second electrode layer 304 is integrally formed and the cathode voltage is 0V, the voltage of the first anode 301A can be controlled to be 8V and the voltage of the second anode 301B can be controlled to be 1V, thereby realizing individual control of the voltage across the sub-pixel P and the photoelectric sensor M.

[0343] For example, the voltage range between the first anode 301A and the second electrode layer 304 can be 8V to 16V, such as 8V, 10.5V, 13.56V or 16V. The voltage range between the second anode 301B and the second electrode layer 304 can be -2V to 8V, such as -2V, 0V, 1.5V, 4.75V or 8V.

[0344] The inventors of this disclosure have analyzed the functional effects of the display device 1000 provided in the embodiments of this disclosure, and the analysis results are as follows:

[0345] Table 1

[0346] Identification item Value Imaging item Value Imaging test product Identification resolution > 600 ppi Sensor resolution > 1302 dpi 4334 dpi Effective imaging angle 38° Θ1 52° Identification size About 1423 μm Imaging size 656 μm Ridge valley line width About 500 μm Pixel size < 19.3 μm 5.86 μm Identification ridge valley line pair About 2.8 pairs Containing pixels > 33 About 120

[0347] Referring to Table 1, the inventors of this disclosure have analyzed the fingerprint recognition and scanning imaging aspects of the photoelectric sensor M. "Recognition aspect" refers to simply detecting and identifying the target object. For example, light emitted by sub-pixel P shines on a finger and is reflected back by the finger, forming a return light. The photoelectric sensor M absorbs this return light and compares the fingerprint information carried by the return light to achieve fingerprint recognition. "Imaging aspect" refers to scanning the target object and displaying the scanned information as an image. For example, light emitted by sub-pixel P shines on an image and is reflected back by the image, forming a return light. This return light carries the position and color information of the image. The photoelectric sensor M absorbs this return light and displays the position and color information carried by the return light as an image, thereby completing the scanning imaging of the image.

[0348] As shown in Table 1, the photoelectric sensor M of the display device 1000 provided in this embodiment of the present disclosure can achieve a recognition resolution of over 600ppi in the recognition project. With an effective imaging angle of 38°, the recognition size (e.g., the side length of the area of ​​a finger that can be recognized by the photoelectric sensor M) is approximately 1423μm. In the fingerprint recognition project, approximately 2.8 pairs of ridge lines can be recognized.

[0349] As shown in Table 1, in the identification project, the photoelectric sensor M of the display device 1000 provided in this embodiment can achieve a resolution of 1302 dpi or higher when performing scanning imaging, for example, 4334 dpi. Finally, the side length of the image after scanning imaging by the photoelectric sensor M can reach 656 μm, each pixel can be less than 19.3 μm, for example, 5.86 μm, and the number of pixels can reach more than 33, for example, 120.

[0350] The inventors of this disclosure have analyzed the scanning imaging function of the display device 1000 provided in the embodiments of this disclosure.

[0351] Figure 25 For an image serving as the target object, the display device 1000 provided in this embodiment scans and images the image. For example, with the display side of the display device 1000 facing the image, the light emitted by the sub-pixel P is used as a light source to capture the image, and the photoelectric sensor M receives the capturing result and performs imaging to obtain an image as shown. Figure 26 The image shown.

[0352] See Figure 26 It can be seen that the image obtained after scanning and imaging by the display device 1000 provided in this embodiment has high resolution, high color saturation, and high color accuracy. Figure 25 The images in the images are roughly the same, that is, the scanning imaging effect of the display device 1000 provided in the embodiments of this disclosure is realistic.

[0353] In another aspect, embodiments of this disclosure also provide a display panel 100.

[0354] like Figure 16 As shown, the display panel 100 includes a substrate 21, a first electrode layer 301, a pixel defining layer 302, a light-emitting pattern 303A, a light-absorbing pattern 303B, a second electrode layer 304, a first light-shielding pattern 401, and a cover plate 402.

[0355] The substrate 21 can be a single-layer structure or a multi-layer structure. For example, the substrate 21 may include a flexible base layer and a buffer layer stacked sequentially. Alternatively, the substrate 21 may include multiple flexible base layers and multiple buffer layers arranged alternately. The flexible base layer may be made of polyimide, and the buffer layer may be made of silicon nitride and / or silicon oxide to achieve the effects of blocking water and oxygen and blocking alkaline ions.

[0356] See Figure 16 The first electrode layer 301 is disposed on one side of the substrate 21.

[0357] The first electrode layer 301 includes a first anode 301A and a second anode 301B. The first anode 301A and the second anode 301B are respectively configured to transmit different anode signals.

[0358] For example, both the first anode 301A and the second anode 301B are configured to transmit a high-level voltage, for example, to transmit a power supply voltage.

[0359] See Figure 16The pixel defining layer 302 is disposed on the side of the first electrode layer 301 away from the substrate 21. The pixel defining layer 302 has a first opening K1 and a second opening K2, the first opening K1 corresponding to the position of the first anode 301A, and the second opening K2 corresponding to the position of the second anode 301B.

[0360] See Figure 16 At least a portion of the luminescent pattern 303A is disposed within the first opening K1.

[0361] For example, the portion of the luminescent pattern 303A located within the first opening K1 is in electrical contact with the first anode 301A.

[0362] The material of the luminescent pattern 303A can be a fluorescent luminescent material or a phosphorescent luminescent material, thereby emitting red light, blue light, green light or white light.

[0363] The luminescent pattern 303A is configured as the luminescent material of the sub-pixel P in the display panel 100, so that the display panel 100 can achieve luminescent display.

[0364] See Figure 16 At least a portion of the light-absorbing pattern 303B is disposed within the second opening K2.

[0365] For example, the portion of the light-absorbing pattern 303B located within the second opening K2 is in electrical contact with the second anode 301B.

[0366] For example, the light-absorbing pattern 303B is capable of absorbing light.

[0367] For example, when the light-absorbing pattern 303B is configured to form the photoelectric sensor M described in the foregoing embodiment, the light-absorbing pattern 303B can absorb the light emitted by the light-emitting pattern 303A. For example, the light-absorbing pattern 303B can absorb the light directly emitted by the light-emitting pattern 303A, as well as the light emitted by the light-emitting pattern 303A and then reflected by the target object or other structure.

[0368] When the light-absorbing pattern 303B forms the photoelectric sensor M, its characteristics and effects are roughly the same as those of the display panel 100 provided in any of the foregoing embodiments, and will not be described again here.

[0369] Alternatively, for example, when the light-absorbing pattern 303B is configured as a light-shielding material to absorb stray light and prevent stray light from affecting the light-emitting effect of sub-pixel P, the light-absorbing pattern 303B can absorb ambient light entering the display panel 100 from outside the display panel 100, thereby preventing ambient light from affecting the light-emitting accuracy of sub-pixel P. Alternatively, the light-absorbing pattern 303B can absorb stray light emitted by sub-pixel P that is repeatedly reflected inside the display panel 100, which can also improve the light-emitting effect of sub-pixel P, for example, improving the accuracy of the color of the light emitted by sub-pixel P.

[0370] See Figure 16 The second electrode layer 304 is disposed on the side of the pixel electrode layer 302 away from the substrate 21, and covers the light-emitting pattern 303A and the light-absorbing pattern 303B.

[0371] For example, the second electrode layer 304 is configured to transmit a low-level voltage.

[0372] The high-level voltage transmitted by the first anode 301A and the low-level voltage transmitted by the part of the second electrode layer 304 covering the light-emitting pattern 303A work together to form an electric field. Driven by this electric field, holes in the first anode 301A and electrons in the second electrode layer 304 are transmitted to the light-emitting pattern 303A located in the first opening K1. Holes and electrons combine in the light-emitting pattern 303A to form excitons and thus emit light.

[0373] The light emitted by the light-emitting pattern 303A is emitted through the first opening K1, that is, the area where the first opening K1 is located is the effective light-emitting area of ​​the sub-pixel P.

[0374] When the light-absorbing pattern 303B is configured to form the photoelectric sensor M described in the aforementioned embodiment, the light-absorbing pattern 303B absorbs light (e.g., light emitted by the light-emitting pattern 303A and reflected by the target object), generating photogenerated carriers. The high-level voltage transmitted by the second anode 301B, together with the low-level voltage transmitted by the portion of the second electrode layer 304 covering the light-absorbing pattern 303B, forms an electric field. Under the action of this electric field, the transmission and analysis of the aforementioned photogenerated carriers are realized, thereby achieving optical detection, optical recognition, and scanning imaging.

[0375] The light emitted by the luminescent pattern 303A illuminates the target object and is reflected by the target object, and then enters the light-absorbing pattern 303B through the second opening K2. That is, the area where the second opening K2 is located is the effective light-absorbing area of ​​the photoelectric sensor M.

[0376] See Figure 16 The first light-shielding pattern 401 is disposed on the side of the second electrode layer 304 away from the substrate 21.

[0377] The material of the first light-shielding pattern 401 is a light-shielding material. For example, it can be a material that absorbs visible light, or it can be a metallic material, or it can include a resin material doped with pigments (such as carbon black) or dyes, thereby achieving the purpose of light shielding.

[0378] The first light-shielding pattern 401 is configured to block stray light from outside the display panel 100 from entering the display panel 100, thereby reducing the interference of stray light on the light emission pattern 303A in the display panel 100 and reducing the interference of stray light on the light absorption pattern 303B in the display panel 100.

[0379] For example, when the light-absorbing pattern 303B is configured to form the photoelectric sensor M described in the foregoing embodiments, see [reference]. Figure 17 and Figure 18 The first light-blocking pattern 401 has a third opening K3 and a fourth opening K4. The third opening K3 is set to correspond with the light-emitting pattern 303A, and the fourth opening K4 is set to correspond with the light-absorbing pattern 303B.

[0380] That is, the sub-pixel P is exposed through the third opening K3 to prevent the first light-blocking pattern 401 from blocking the light-emitting pattern 303A in the sub-pixel P, and the photoelectric sensor M is exposed through the fourth opening K4 to prevent the first light-blocking pattern 401 from blocking the path of the light-absorbing pattern 303B in the photoelectric sensor M from absorbing the reflected light (the light emitted by the sub-pixel P and reflected by the target object).

[0381] By opening a third opening K3 and a fourth opening K4 on the first light-shielding pattern 401, the first light-shielding pattern 401 can block stray light from outside the display panel 100, preventing stray light from entering the display panel 100 and interfering with the light-emitting effect of the light-emitting pattern 303A and the light-absorbing effect of the light-absorbing pattern 303B. At the same time, it can also prevent the first light-shielding pattern 401 from blocking the light-emitting path of the light-emitting pattern 303A and the light-absorbing path of the light-absorbing pattern 303B, thus satisfying the light-emitting display function and light-absorbing function of the display panel 100, improving the light-emitting display effect of the sub-pixel P, and realizing the function of the photoelectric sensor M (such as scanning imaging, recognition, detection, etc.).

[0382] The cover plate 402 is located on the side of the first light-shielding pattern 401 away from the substrate 21.

[0383] That is, the cover plate 402 is disposed on the display side of the display panel 100. The cover plate 402 is configured to protect the display screen of the display panel 100 and reduce the degree of damage to the display screen after it is subjected to external impact.

[0384] Among them, see ​The ratio between the vertical distance d1 from the surface of the first light-shielding pattern 401 away from the substrate 21 to the surface of the cover plate 402 away from the substrate 21 and the vertical distance d2 from the surface of the first light-shielding pattern 401 away from the substrate 21 to the light-absorbing pattern 303B is approximately 1.8 to 2.8. For example, the ratio is 1.8, 2, 2.56 or 2.8.

[0385] For example, the vertical distance d1 between the surface of the first light-shielding pattern 401 away from the substrate 21 and the surface of the cover plate 402 away from the substrate 21 can be 756 μm, 800.5 μm, 953.75 μm or 1176 μm.

[0386] For example, the vertical distance d2 from the surface of the first light-shielding pattern 401 away from the substrate 21 to the light-absorbing pattern 303B can be 420 μm, 500.5 μm or 653.33 μm.

[0387] When the light-absorbing pattern 303B is configured to form the photoelectric sensor M described in the foregoing embodiment, the target object is placed on the side of the cover plate 402 away from the substrate 21. The light emitted by the light-emitting pattern 303A passes through the first opening K1, the third opening K3 and the cover plate 402 in sequence and reaches the target object. After being reflected by the target object, it forms a return light. The return light passes through the cover plate 402, the fourth opening K4 and the second opening K2 in sequence and reaches the light-absorbing pattern 303B, thereby realizing the light absorption of the photoelectric sensor M.

[0388] By setting the ratio between the vertical distance d1 and the vertical distance d2 to approximately 1.8 to 2.8, that is, controlling the ratio between the distance between the target object and the first light-blocking pattern 401 and the distance between the light-absorbing pattern 303B and the first light-blocking pattern 401, the amount of reflected light that can reach the light-absorbing pattern 303B can be controlled, and the area of ​​the effective region of the target object that the photoelectric sensor M can scan or identify can be controlled, while keeping the size of the fourth opening K4 unchanged.

[0389] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A display panel, comprising: Substrate; A first electrode layer is disposed on one side of the substrate; the first electrode layer includes a first anode and a second anode, the first anode and the second anode being respectively configured to transmit different anode signals; A pixel defining layer is disposed on the side of the first electrode layer away from the substrate; the pixel defining layer has a first opening and a second opening, the first opening corresponding to the position of the first anode and the second opening corresponding to the position of the second anode; A light-emitting pattern, at least a portion of which is located within the first opening; A light-absorbing pattern, at least a portion of which is located within the second opening, the light-absorbing pattern comprising a plurality of sub-light-absorbing patterns stacked along a direction perpendicular to the substrate, each sub-light-absorbing pattern being capable of absorbing light of at least one color; The second electrode layer is disposed on the side of the pixel defining layer away from the first electrode layer, and covers the light-emitting pattern and the light-absorbing pattern; The display panel includes a plurality of sub-pixels and at least one photoelectric sensor, each photoelectric sensor being disposed adjacent to at least one sub-pixel; the sub-pixel includes a first anode, the light-emitting pattern, and a portion of the second electrode layer covering the light-emitting pattern, and the photoelectric sensor includes a second anode, the light-absorbing pattern, and a portion of the second electrode layer covering the light-absorbing pattern.

2. The display panel according to claim 1, wherein, The light-absorbing pattern includes a first sub-light-absorbing pattern and a second sub-light-absorbing pattern. The color of light absorbed by the first sub-light-absorbing pattern is the same as the color of light absorbed by the second sub-light-absorbing pattern.

3. The display panel according to claim 2, wherein, The first and second sub-light-absorbing patterns can absorb light with approximately the same wavelength range.

4. The display panel according to claim 2 or 3, wherein, The first sub-light-absorbing pattern and the second sub-light-absorbing pattern are made of the same material.

5. The display panel according to claim 1, wherein, The light-absorbing pattern includes a first sub-light-absorbing pattern and a second sub-light-absorbing pattern. The color of light absorbed by the first sub-light-absorbing pattern is not exactly the same as the color of light absorbed by the second sub-light-absorbing pattern.

6. The display panel according to claim 5, wherein, One of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern can absorb red light and blue light, and the other of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern can absorb green light; or, One of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern can absorb red light and green light, and the other of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern can absorb blue light; or, One of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern can absorb blue light and green light, and the other of the first sub-light-absorbing pattern and the second sub-light-absorbing pattern can absorb red light.

7. The display panel according to any one of claims 2, 3, 5, and 6, further comprising: The second heterojunction is disposed between the first sub-light-absorbing pattern and the second sub-light-absorbing pattern.

8. The display panel according to claim 7, wherein, The light-emitting pattern includes a first sub-light-emitting pattern and a second sub-light-emitting pattern stacked along a direction perpendicular to the substrate; The display panel also includes: A first heterojunction is disposed between the first sub-light-emitting pattern and the second sub-light-emitting pattern; the first heterojunction and the second heterojunction are connected and integrally disposed.

9. The display panel according to any one of claims 1 to 3, 5, 6, and 8, wherein, The light-absorbing pattern of one of the photoelectric sensors is capable of absorbing light of a certain color; A photoelectric sensor capable of absorbing target color light is disposed adjacent to a sub-pixel capable of emitting the target color light.

10. The display panel according to any one of claims 1 to 3, 5, 6, and 8, wherein, The light absorption pattern of one of the photoelectric sensors is capable of absorbing two colors of light; A photoelectric sensor capable of absorbing a first target color light and a second target color light is disposed between a sub-pixel capable of emitting the first target color light and a sub-pixel capable of emitting the second target color light.

11. The display panel according to any one of claims 1 to 3, 5, 6, and 8, wherein, The light-absorbing pattern of one of the photoelectric sensors is capable of absorbing three colors of light, namely red light, blue light and green light; A photoelectric sensor capable of absorbing light of the three colors is disposed adjacent to a sub-pixel capable of emitting green light.

12. The display panel according to any one of claims 1 to 3, 5, 6, and 8, wherein, The material of the light-absorbing pattern includes perovskite-based semiconductor materials; Light-absorbing patterns that can absorb different colors of light correspond to different band gaps in the materials.

13. The display panel according to claim 12, wherein, The molecular formula of the material of the light-absorbing pattern is RNH3BY. 3- m X m Where R is C n H 2n+1 B is a metallic element, X and Y are different halogen elements, and m and n are integers; Light-absorbing patterns that can absorb different colors of light correspond to different mass ratios of X and Y in the material.

14. The display panel according to any one of claims 1 to 3, 5, 6, 8, and 13, further comprising: A first light-shielding pattern is disposed on the side of the second electrode layer away from the substrate; The first light-blocking pattern has a third opening and a fourth opening, the third opening being corresponding to the light-emitting pattern and the fourth opening being corresponding to the light-absorbing pattern; A cover plate is disposed on the side of the first light-shielding pattern away from the substrate; The ratio between the vertical distance from the surface of the first light-shielding pattern away from the substrate to the surface of the cover plate away from the substrate and the vertical distance from the surface of the first light-shielding pattern away from the substrate to the light-absorbing pattern is approximately 1.8 to 2.

8.

15. The display panel according to claim 14, wherein, The minimum angle between the line connecting the sidewall of the fourth opening and the light-absorbing pattern corresponding to the fourth opening and the light-absorbing pattern is approximately 40°~60°.

16. The display panel according to any one of claims 1 to 3, 5, 6, 8, 13, and 15, further comprising: A second light-shielding pattern is disposed between the substrate and the second electrode layer; The second light-shielding pattern is located between the light-absorbing pattern and the light-emitting pattern adjacent to the light-absorbing pattern, and the vertical distance from the surface of the second light-shielding pattern away from the substrate to the substrate is greater than or equal to the vertical distance from the surface of the light-absorbing pattern away from the substrate to the substrate of the light-emitting pattern and the surface of the light-emitting pattern away from the substrate.

17. The display panel according to any one of claims 1 to 3, 5, 6, 8, 13, and 15, wherein, The ratio of the area of ​​the first opening to the area of ​​the second opening is approximately 1 to 3.

5.

18. The display panel according to any one of claims 1 to 3, 5, 6, 8, 13, and 15, further comprising: An encapsulation layer is disposed on the side of the second electrode layer away from the substrate, and the refractive index of the encapsulation layer is 1.5 to 1.

8.

19. The display panel according to any one of claims 1 to 3, 5, 6, 8, 13, and 15, further comprising: A drive signal line, one end of which is electrically connected to the second anode and the other end of which is electrically connected to an external processor; The drive signal line is configured to transmit a second anode signal to the second anode.

20. The display panel according to any one of claims 1 to 3, 5, 6, 8, 13, and 15, further comprising: A circuit layer is disposed between the substrate and the first electrode layer; the circuit layer includes a pixel circuit and a photosensitive driving circuit, the pixel circuit is electrically connected to the first anode, and the photosensitive driving circuit is electrically connected to the second anode.

21. The display panel according to claim 20, wherein, The circuit layer includes: an active layer, a gate insulating layer, a gate conductive layer, an interlayer dielectric layer, and a source / drain conductive layer disposed along a direction perpendicular to the substrate and away from the substrate; Each pixel circuit includes a first active layer pattern, a scan signal line, and a first power line. The first active layer pattern is located in the active layer, the scan signal line is located in the gate conductive layer, and the first power line is located in the source-drain conductive layer. The overlapping portion of the first active layer pattern and the scan signal line forms a transistor, and at least one transistor is electrically connected to the first anode. The first power line is electrically connected to at least one transistor.

22. The display panel according to claim 21, wherein, The photosensitive driving circuit includes a diode and a second power line. The second power line is located in the source-drain conductive layer. One end of the diode is electrically connected to the second anode, and the other end is electrically connected to the second power line.

23. The display panel according to claim 22, wherein, The diode includes a second active layer pattern, the second active layer pattern being located in the active layer; The second active layer pattern includes a first component and a second component that are electrically connected. The first component is a hole-type semiconductor, and the second component is an electron-type semiconductor. The first component is electrically connected to the second anode, and the second component is electrically connected to the second power line.

24. The display panel according to any one of claims 1 to 3, 5, 6, 8, 13, 15, 21 to 23, further comprising: A second hole transport pattern is disposed between the second anode and the light-absorbing pattern.

25. The display panel according to claim 24, further comprising: A first hole transport pattern is disposed between the first anode and the light-emitting pattern; The materials of the first hole transmission pattern and the second hole transmission pattern are different.

26. The display panel according to any one of claims 1 to 3, 5, 6, 8, 13, 15, 21 to 23, and 25, further comprising: A first common layer is disposed between the first anode and the light-emitting pattern, and between the second anode and the light-absorbing pattern; the first common layer includes a hole transport layer and / or a hole injection layer; And / or, A second common layer is disposed between the light-emitting pattern and the second electrode layer, and between the light-absorbing pattern and the second electrode layer; the second common layer includes an electron transport layer and / or an electron injection layer.

27. The display panel according to any one of claims 1 to 3, 5, 6, 8, 13, 15, 21 to 23, and 25, wherein, The second electrode layer includes a first cathode and a second cathode, wherein the first cathode corresponds to the position of the light-emitting pattern and the second cathode corresponds to the position of the light-absorbing pattern; Wherein, the first cathode and the second cathode are integrally disposed; or, the first cathode and the second cathode are insulated from each other, and the first cathode and the second cathode are respectively configured to transmit different cathode signals.

28. The display panel according to any one of claims 1 to 3, 5, 6, 8, 13, 15, 21 to 23, and 25, wherein, The voltage range between the first anode and the second electrode layer is 8V to 16V; the voltage range between the second anode and the second electrode layer is -2V to 8V.

29. A display panel, comprising: Substrate; A first electrode layer is disposed on one side of the substrate; the first electrode layer includes a first anode and a second anode, the first anode and the second anode being respectively configured to transmit different anode signals; A pixel defining layer is disposed on the side of the first electrode layer away from the substrate; the pixel defining layer has a first opening and a second opening, the first opening corresponding to the position of the first anode and the second opening corresponding to the position of the second anode; A light-emitting pattern, at least a portion of which is located within the first opening; A light-absorbing pattern, at least a portion of which is located within the second opening, the light-absorbing pattern comprising a plurality of sub-light-absorbing patterns stacked along a direction perpendicular to the substrate, each of the sub-light-absorbing patterns being capable of absorbing light of at least one color; The second electrode layer is disposed on the side of the pixel defining layer away from the first electrode layer, and covers the light-emitting pattern and the light-absorbing pattern; A first light-shielding pattern is disposed on the side of the second electrode layer away from the substrate; A cover plate is disposed on the side of the first light-shielding pattern away from the substrate; The ratio between the vertical distance from the surface of the first light-shielding pattern away from the substrate to the surface of the cover plate away from the substrate and the vertical distance from the surface of the first light-shielding pattern away from the substrate to the light-absorbing pattern is approximately 1.8 to 2.

8.

30. A display device, comprising: The display panel as described in any one of claims 1 to 29; The casing is at least partially disposed around the display panel.

Images