Semiconductor device and package structure with stress variation compensation control

Abstract

Embodiments of the present application relate to a semiconductor device and packaging structure with stress change compensation control. The semiconductor device packaging structure comprises: a packaging shell for packaging a semiconductor chip in the packaging shell; a pressure sensitive layer arranged on the upper surface and / or lower surface of the semiconductor chip; the pressure sensitive layer senses the stress change of the semiconductor chip caused by temperature change and outputs a pressure signal; a signal processing module comprising a signal preprocessing circuit and a pressure signal processing circuit; the pressure signal is amplified, filtered and converted by the signal preprocessing circuit, and is sent to the pressure signal processing circuit; comparison processing and feedback adjustment are performed in the pressure signal processing circuit to generate a dynamic compensation signal; a refrigeration and heating control circuit receives the dynamic compensation signal and generates a heating control signal or a refrigeration control signal accordingly, and sends the signal to a heater to heat the semiconductor chip or to a refrigerator to cool the semiconductor chip.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor devices, and particularly relates to a semiconductor device with stress change compensation control and a packaging structure. BACKGROUND

[0002] With the development of science and technology, semiconductor devices have been widely used in electronic, communication, automobile, aerospace and other fields. In the application process of semiconductor devices, temperature changes often affect the performance and stability of the devices. Especially with the expansion of its application field and application environment, the working requirements of semiconductor devices in high temperature or low temperature environment have also gradually increased. In addition to the possibility of performance decline or even failure in device performance, temperature changes also have an impact on the device itself from the perspective of stress changes. Therefore, temperature compensation control technology for semiconductor devices has attracted much attention.

[0003] In the traditional packaging structure of semiconductor devices, there is a problem of mismatching of the thermal expansion coefficients between the packaging material and the semiconductor chip, which causes thermal stress caused by temperature changes to affect the performance and reliability of the device. In order to solve this problem, the existing technology usually selects a packaging material with similar thermal expansion coefficients of the material or relieves the stress change problem through structural design.

[0004] However, the method of selecting the thermal expansion coefficient of the material can only alleviate the impact of temperature changes to a certain extent. The structural design to relieve stress changes is usually static, and once the design is determined and implemented, it cannot be adjusted during operation. In addition, structural design can only be applied to temperature changes within a certain range, and may not provide effective compensation for temperature changes within a larger range. Due to the uncertainty and complexity of temperature changes, the flexibility of relieving stress changes through structural design is limited. Moreover, the above-mentioned methods of existing technology cannot achieve dynamic stress adjustment for real-time temperature changes during device operation. SUMMARY

[0005] The purpose of the present application is to provide a semiconductor device with stress change compensation control and a packaging structure to overcome the defects of the prior art. By using a pressure-sensitive layer and a processing circuit for processing pressure signals and a refrigeration and heating control circuit to achieve dynamic temperature compensation control of the semiconductor device, real-time monitoring and adjustment of temperature changes can be achieved, thereby improving the performance and stability of the device.

[0006] To achieve the above purpose, in a first aspect, the present application provides a semiconductor device packaging structure with stress change compensation control, comprising:

[0007] The semiconductor device packaging structure comprises:

[0008] a packaging shell for packaging a semiconductor chip in the packaging shell;

[0009] a pressure sensitive layer arranged on the upper surface and / or the lower surface of the semiconductor chip; the pressure sensitive layer senses stress change of the semiconductor chip caused by temperature change and outputs a pressure sensitive signal;

[0010] a signal processing module including a signal pre-processing circuit and a pressure sensitive signal processing circuit; the pressure sensitive signal is subjected to signal amplification, filtering and conversion processing by the signal pre-processing circuit and is sent to the pressure sensitive signal processing circuit, in which comparison processing and feedback adjustment are performed to generate a dynamic compensation signal;

[0011] a refrigeration and heating control circuit receiving the dynamic compensation signal and correspondingly generating a heating control signal or a refrigeration control signal to be sent to a heater or a refrigeration device;

[0012] the heater receiving the heating control signal to heat the packaging shell and the semiconductor chip packaged in the packaging shell;

[0013] the refrigeration device receiving the refrigeration control signal to refrigerate the packaging shell and the semiconductor chip packaged in the packaging shell.

[0014] Preferably, the signal pre-processing circuit includes an amplification circuit, a filtering circuit and an analog-to-digital conversion processing circuit.

[0015] The amplification circuit increases the signal amplitude of the pressure sensitive signal to obtain an amplified pressure sensitive signal.

[0016] The filtering circuit removes noise from the amplified pressure sensitive signal to obtain a de-noised pressure sensitive signal.

[0017] The analog-to-digital conversion processing circuit converts the de-noised pressure sensitive signal from an analog signal to a digital signal and sends it to the pressure sensitive signal processing circuit.

[0018] Preferably, the pressure sensitive signal processing circuit includes a comparator and a feedback adjustment controller.

[0019] The comparator compares the voltage value of the pressure sensitive signal processed by the signal pre-processing circuit with a set target value to obtain an error signal.

[0020] The feedback adjustment controller generates a dynamic compensation signal according to the size and / or rate of change of the error signal.

[0021] Further preferably, the feedback adjustment controller is a proportional-integral-derivative (PID) controller.

[0022] Preferably, the pressure sensitive layer is made of pressure sensitive glue, pressure sensitive film or pressure sensitive ceramic; the pressure sensitive layer generates piezoelectric effect under force to generate voltage output, and the pressure sensitive signal is output.

[0023] Preferably, the semiconductor device packaging structure further comprises a temperature sensor and a compensation correction circuit.

[0024] The temperature sensor is used to monitor the surface temperature of the semiconductor chip, generate a temperature sensing signal, and send it to the compensation correction circuit.

[0025] The compensation correction circuit is arranged before the signal preprocessing circuit, and the compensation correction circuit corrects the pressure sensitive signal according to the temperature sensing signal, so as to eliminate the output deviation of the pressure sensitive signal caused by the temperature change of the pressure sensitive layer, and sends the corrected pressure sensitive signal to the signal preprocessing circuit.

[0026] Further preferably, the compensation correction circuit determines the correction parameters corresponding to different temperatures according to the material of the pressure sensitive layer used in the packaging structure, and corrects the pressure sensitive signal in real time according to the temperature sensing signal.

[0027] Preferably, the heater is arranged below the packaging shell.

[0028] Preferably, the refrigerator is arranged above and / or around the packaging shell.

[0029] In the second aspect, the embodiments of the present application provide a semiconductor device with stress change compensation control, comprising the semiconductor device packaging structure of the first aspect.

[0030] The embodiments of the present application provide a semiconductor device packaging structure with stress change compensation control. The packaging structure senses the stress change caused by temperature change through the pressure sensitive layer arranged on the surface of the semiconductor chip, and outputs the pressure sensitive signal. The dynamic compensation signal is generated by signal preprocessing and comparison processing and feedback adjustment of the pressure sensitive signal, and then the heating control signal or the refrigeration control signal is generated by the refrigeration and heating control circuit, so as to heat or refrigerate the semiconductor chip. The technical scheme of the present application effectively realizes real-time monitoring of the stress change of the semiconductor device caused by temperature change and feedback adjustment of the temperature, so as to effectively feedback control the stress change of the chip, effectively improve the performance and stability of the device, and provide more reliable guarantee for the application of the semiconductor device. The packaging structure can be conveniently applied to various types of existing semiconductor device packaging structures, has good applicability, and has wide application prospect. BRIEF DESCRIPTION OF DRAWINGS

[0031] Figure 1This is a diagram of a semiconductor device packaging structure with stress compensation control provided for an embodiment of the present invention. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0033] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0034] The semiconductor device packaging structure with stress compensation control provided in this embodiment of the invention has the following structure: Figure 1 As shown below, in conjunction with Figure 1 The technical solution of the present invention will be described with reference to specific embodiments.

[0035] The semiconductor device packaging structure with stress compensation control proposed in this invention includes:

[0036] The package housing 1 is used to encapsulate the semiconductor chip 100 within the package housing 1.

[0037] A pressure-sensitive layer 2 is disposed on the upper surface and / or lower surface of the semiconductor chip 100; the pressure-sensitive layer 2 senses the stress change of the semiconductor chip 100 caused by temperature change and outputs a pressure-sensitive signal.

[0038] Specifically, the pressure-sensitive layer 2 is made of one of pressure-sensitive adhesive, pressure-sensitive film, or pressure-sensitive ceramic, and its electrical properties change with external force. This invention adds a pressure-sensitive layer 2 to the device structure. When the semiconductor chip 100 is affected by external temperature changes and undergoes stress changes resulting in deformation, the pressure-sensitive layer 2 is subjected to force and deforms accordingly. The pressure-sensitive layer 2 generates a piezoelectric effect, producing a voltage output, and the output pressure-sensitive signal is sent to the signal preprocessing circuit 6 of the signal processing module 5.

[0039] Preferably, considering that the electrical properties of the pressure-sensitive layer 2, such as its resistance or capacitance, will change when subjected to temperature changes, the semiconductor device packaging structure provided in this embodiment also includes a temperature sensor 3 and a compensation and correction circuit 4.

[0040] Pressure-sensitive adhesives and films are typically made of polymer or flexible materials, and their electrical properties change with temperature. Specifically, their electrical characteristics, such as resistance or capacitance, change. This change causes a change in voltage output.

[0041] The piezoelectric ceramic is usually made of zirconium oxide or lead oxide, and the crystal structure of the piezoelectric ceramic changes under temperature change, resulting in changes in the piezoelectric coefficient or dielectric constant of the piezoelectric ceramic. This change causes the piezoelectric ceramic to produce a voltage output drift, the size and direction of which depend on the direction and amplitude of the temperature change.

[0042] Therefore, in the present embodiment, the temperature sensor 3 and the compensation correction circuit 4 are used to correct the voltage drift of the piezoelectric layer 2 itself caused by temperature, so that the pressure signal finally processed by the signal processing module 5 is truly caused by the stress change of the semiconductor chip 100.

[0043] The temperature sensor 3 is used to monitor the surface temperature of the semiconductor chip 100 and generate a temperature sensing signal, which is sent to the compensation correction circuit 4. The compensation correction circuit 4 is arranged before the signal preprocessing circuit 6, and the compensation correction circuit 4 corrects the pressure sensing signal according to the temperature sensing signal, so as to eliminate the output deviation of the pressure sensing signal caused by the temperature change of the piezoelectric layer 2, and sends the corrected pressure sensing signal to the signal preprocessing circuit 6.

[0044] In specific implementation, the compensation correction circuit 4 can determine the correction parameters corresponding to different temperatures according to the material of the piezoelectric layer 2 used in the packaging structure, and correct the pressure sensing signal in real time according to the temperature sensing signal.

[0045] The correction parameters corresponding to different piezoelectric layer materials at different temperatures can be obtained by first obtaining a series of data according to experiments, and then performing data fitting on the obtained data to obtain a smooth curve of piezoelectric layer material-temperature-correction parameter, so as to obtain the correction parameters corresponding to different piezoelectric layer materials at different temperatures.

[0046] The signal processing module 5 includes a signal preprocessing circuit 6 and a pressure sensing signal processing circuit 7. The signal preprocessing circuit 6 is used for signal amplification, filtering and conversion processing of the pressure sensing signal, and the pressure sensing signal processing circuit 7 is used for comparison processing and feedback adjustment of the pressure sensing signal, to generate a dynamic compensation signal.

[0047] Specifically, the signal preprocessing circuit 6 includes an amplification circuit 61, a filtering circuit 62 and an analog-to-digital conversion processing circuit 63.

[0048] The amplification circuit 61 amplifies the signal amplitude of the pressure sensing signal to obtain an amplified pressure sensing signal.

[0049] The filtering circuit 62 removes noise from the amplified pressure sensing signal through filtering to obtain a de-noised pressure sensing signal.

[0050] The analog-to-digital conversion processing circuit 63 converts the de-noised pressure sensing signal from an analog signal to a digital signal and sends it to the pressure sensing signal processing circuit 7.

[0051] The pressure sensing signal processing circuit 7 comprises a comparator 71 and a feedback adjustment controller 72.

[0052] The comparator 71 compares the voltage value of the pressure sensing signal processed by the signal preprocessing circuit 6 with a set target value to obtain an error signal. For example, if the device is required to be kept within a specific temperature range, the measured temperature can be compared with the voltage value corresponding to the pressure on the pressure sensitive layer 2 caused by the deformation of the semiconductor chip 100 at the set target temperature, and an error signal is generated according to the comparison result, indicating the difference between the actual voltage value and the expected voltage value.

[0053] The feedback adjustment controller 72 generates a dynamic compensation signal according to the size and / or rate of change of the error signal. The feedback adjustment controller can be a proportional-integral-derivative (PID) controller. The PID controller will adjust the dynamic compensation signal output by the feedback adjustment controller 72 according to the size and / or rate of change of the error signal. In the case of temperature control required in the present embodiment, the dynamic compensation signal can be the voltage or current controlling the heater or the cooler, so as to adjust the temperature of the semiconductor chip 100 in the semiconductor device through the heater or the cooler, thereby changing the stress, so as to reduce or eliminate the deformation.

[0054] The refrigeration and heating control circuit 8 receives the dynamic compensation signal and correspondingly generates a heating control signal or a cooling control signal, which is sent to the heater 91 or the cooler 92.

[0055] The heater 91 receives the heating control signal to heat the packaging shell 1 and the semiconductor chip 100 packaged in the packaging shell 1. The heater is preferably arranged below the packaging shell 1.

[0056] The cooler 92 receives the cooling control signal to cool the packaging shell 1 and the semiconductor chip 100 packaged in the packaging shell 1. The cooler is preferably arranged above and / or around the packaging shell 1.

[0057] The adjustment of the heater 91 or the cooler 92 can be the adjustment of the power of the heater 91 or the cooler 92, so as to keep the temperature of the semiconductor chip 100 within the desired range, i.e. to control the stress change of the semiconductor chip 100 within the desired moderate range.

[0058] After the heating or cooling is controlled, the temperature of the semiconductor chip 100 changes correspondingly, the stress change is reduced, the deformation is reduced, and the force acting on the pressure sensitive layer 2 is correspondingly reduced. During the operation of the semiconductor device, the pressure sensitive layer 2 senses the force in real time, and the temperature sensor 3 detects the surface temperature of the semiconductor chip 100 in real time, so that the temperature compensation control is continuously performed during the operation of the semiconductor device, and dynamic stress adjustment is realized.

[0059] The semiconductor device packaging structure with stress change compensation control provided by the embodiment of the present application can effectively realize real-time monitoring of stress change of the semiconductor device caused by temperature change and feedback adjustment of the temperature, thereby effectively feeding back and controlling the stress change of the chip, effectively improving the performance and stability of the device, and providing more reliable guarantee for the application of the semiconductor device.

[0060] Those skilled in the art will further appreciate that the functions explained herein can be implemented in hardware, software, or combination thereof. The order in which the components of the functions are presented is merely exemplary and is not meant to be limiting as the functions can be performed in any order, and not all functions can be performed. The various exemplary methods described herein can be implemented in hardware, software, or any combination thereof. The various features and steps described herein can be used separately or in any combination.

[0061] The steps of methods or algorithms described in connection with the embodiments disclosed herein can be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module can reside in RAM, flash memory, ROM, electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.

[0062] The above detailed description has further explained the purpose, technical scheme and beneficial effects of the present application, and it should be understood that the above description is only a specific embodiment of the present application and is not used to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A semiconductor device package structure with stress variation compensation control, characterized by, The semiconductor device packaging structure comprises: a packaging shell for packaging a semiconductor chip in the packaging shell; a pressure-sensitive layer arranged on the upper surface and / or lower surface of the semiconductor chip; the pressure-sensitive layer senses stress changes of the semiconductor chip caused by temperature changes and outputs a pressure signal; a signal processing module comprising a signal preprocessing circuit and a pressure signal processing circuit; the pressure signal is amplified, filtered and converted by the signal preprocessing circuit and then sent to the pressure signal processing circuit for comparison and feedback adjustment to generate a dynamic compensation signal; a refrigeration and heating control circuit receiving the dynamic compensation signal and generating a heating control signal or a refrigeration control signal accordingly and sending the signal to a heater or a refrigeration device; the heater receiving the heating control signal to heat the packaging shell and the semiconductor chip packaged in the packaging shell; the refrigeration device receiving the refrigeration control signal to refrigerate the packaging shell and the semiconductor chip packaged in the packaging shell; the stress changes of the semiconductor device in the packaging shell caused by temperature changes are controlled by heating or refrigerating the semiconductor chip.

2. The semiconductor device package structure of claim 1, wherein, The signal preprocessing circuit comprises an amplification circuit, a filtering circuit and an analog-to-digital conversion processing circuit; the amplification circuit increases the signal amplitude of the pressure signal to obtain an amplified pressure signal; the filtering circuit removes noise from the amplified pressure signal to obtain a denoised pressure signal; the analog-to-digital conversion processing circuit converts the denoised pressure signal from an analog signal to a digital signal and sends it to the pressure signal processing circuit.

3. The semiconductor device package structure of claim 1, wherein, The pressure signal processing circuit comprises a comparator and a feedback adjustment controller; the comparator compares the voltage value of the pressure signal processed by the signal preprocessing circuit with a set target value to obtain an error signal; the feedback adjustment controller generates a dynamic compensation signal according to the size and / or rate of change of the error signal.

4. The semiconductor device package structure of claim 3, wherein, The feedback adjustment controller is a proportional-integral-derivative (PID) controller.

5. The semiconductor device package structure of claim 1, wherein, The pressure-sensitive layer is made of one of pressure-sensitive glue, pressure-sensitive film and pressure-sensitive ceramic; the pressure-sensitive layer generates a voltage output by piezoelectric effect under force to output the pressure signal.

6. The semiconductor device package structure of claim 1, wherein, The semiconductor device packaging structure further comprises a temperature sensor and a compensation correction circuit; the temperature sensor is used to monitor the surface temperature of the semiconductor chip and generate a temperature sensing signal sent to the compensation correction circuit; the compensation correction circuit is arranged before the signal preprocessing circuit; the compensation correction circuit corrects the pressure signal according to the temperature sensing signal to eliminate the output deviation of the pressure signal caused by temperature changes of the pressure-sensitive layer and sends the corrected pressure signal to the signal preprocessing circuit.

7. The semiconductor device package structure of claim 6, wherein, The compensation correction circuit determines the correction parameters corresponding to different temperatures according to the material of the pressure-sensitive layer of the packaging structure and corrects the pressure signal in real time according to the temperature sensing signal.

8. The semiconductor device package structure of claim 1, wherein, The heater is arranged below the packaging shell.

9. The semiconductor device package structure of claim 1, wherein, The refrigeration device is arranged above and / or around the packaging shell.

10. A semiconductor device having stress variation compensation control, characterized by, The semiconductor device includes the semiconductor device package structure according to any one of claims 1 to 9.

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