Devices and equipment for auxiliary liquid stirring

Abstract

The present disclosure provides a device for assisting liquid stirring. The device comprises: a frame having a bottom and a side wall, wherein the side wall and the bottom form an angle; a first flexible membrane attached to the frame by a peripheral portion of the first flexible membrane; a first magnetic field generator located on the side wall of the frame and adjacent to the peripheral portion of the first flexible membrane; and a second magnetic field generator located at the bottom of the frame, wherein the first magnetic field generator and the second magnetic field generator are used to provide a magnetic field parallel to at least a portion of the first flexible membrane, and wherein a portion of the frame and the first flexible membrane can be in contact with a solution.

Description

Technical Field

[0001] The embodiments of the present invention relate to devices and equipment for assisting liquid stirring. Background Art

[0002] The integrated circuit (IC) industry has experienced exponential growth. Process advances in IC materials and design have produced successive generations of ICs, each with smaller and more complex circuits than the previous one. Over the course of IC development, functional density (i.e., the number of interconnected components per chip area) has generally increased, while geometry (i.e., the size of the smallest component (or circuit) that can be created using a process technology) has decreased. The advantages of this scaling process generally come from increased production efficiency. However, this scaling process also increases the complexity of IC processing and production. To achieve these advances, improved IC processing and manufacturing equipment are needed.

[0003] Liquid deposition, including electroplating and autocatalytic plating (i.e., electroless plating), is one of the key processes in IC manufacturing. Liquid deposition involves depositing a metal (such as copper) onto a substrate (such as a silicon chip) or a printed circuit board. In the case of electroplating, a seed layer is formed on the area of ​​the substrate where deposition is desired. The cathode terminal of the power supply is connected to the seed layer, and the anode terminal is placed at a certain distance from the substrate. The substrate and the terminal are immersed in the plating solution. In this way, the metal salt in the plating solution and the metal ions provided by the anode terminal can interact and be deposited on the seed layer. On the other hand, electroless plating is also one of the most important metallization processes in the printed circuit board industry. In recent years, electroless plating has been used to process high-density integrated circuit boards with features such as microvias and through-holes. This is because the electroless plating process has better fluid dynamics, allowing the metallization chemicals to reach the bottom of the microvias, especially for microvias with an aspect ratio of 1:1 or higher. Summary of the invention

[0004] Some embodiments of the present disclosure provide a liquid deposition assisting device. The device includes a frame having a bottom and a side wall forming an angle with the bottom surface; a first flexible film attached to the frame by a peripheral portion of the first flexible film; a first magnetic field generator located on the side wall of the frame and adjacent to the peripheral portion of the first flexible film; and a second magnetic field generator adjacent to the bottom of the frame, wherein the first magnetic field generator and the second magnetic field generator are used to provide a magnetic field parallel to at least a portion of the first flexible film, and wherein the first flexible film is in contact with a solution for liquid deposition.

[0005] Some embodiments of the present disclosure provide an apparatus for liquid phase thin film deposition. The apparatus includes a chamber and a vibration module. The chamber is used to accommodate a solution for liquid phase deposition; and the vibration module is adjacent to the side wall of the chamber and in contact with the solution for liquid phase deposition. The vibration module includes: a frame having a bottom and a side wall forming an angle with the bottom surface; a first flexible film, attached to the frame by a peripheral portion of the first flexible film; and a first magnetic field generator, located on the side wall of the frame and adjacent to the peripheral portion of the first flexible film. The apparatus further includes a second magnetic field generator, adjacent to the side wall of the chamber, wherein the first magnetic field generator and the second magnetic field generator are used to provide a magnetic field parallel to at least a portion of the first flexible film. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The present disclosure may be more fully understood by referring to the embodiments and claims together with the accompanying drawings. It should be understood that the various features in the drawings are not drawn to scale, in accordance with standard practice in the art. In fact, the size of some features may be intentionally enlarged or reduced to facilitate discussion.

[0007] Figure 1 This is a top view of a liquid deposition auxiliary device drawn according to some embodiments of the present disclosure.

[0008] Figure 2 According to some embodiments of the present disclosure, Figure 1 Schematic diagram of the cross section drawn along the A-A' tangent line.

[0009] Figure 3A and 3B It is a schematic diagram of the configuration of the conductive coil of the liquid deposition auxiliary device drawn according to some embodiments of the present disclosure.

[0010] Figure 4 The diagram is a schematic diagram of magnetic lines of force established by a liquid deposition auxiliary device, a first magnetic field generator, and a second magnetic field generator according to some embodiments of the present disclosure.

[0011] Figure 5 Schematic diagram of a conductive coil drawn according to some embodiments of the present disclosure, showing the force generated by the interaction between the current flowing through the conductive coil and the magnetic field of the liquid deposition auxiliary device.

[0012] Figure 6 It is a cross-sectional schematic diagram of a liquid deposition auxiliary device drawn according to some embodiments of the present disclosure.

[0013] Figure 7 This is a top view of a liquid deposition auxiliary device drawn according to some embodiments of the present disclosure.

[0014] Figure 8According to some embodiments of the present disclosure, Figure 7 Schematic diagram of the cross section drawn along the B-B' tangent line.

[0015] Fig.9A and 9B It is a schematic diagram of the configuration of the conductive coil of the liquid deposition auxiliary device drawn according to some embodiments of the present disclosure.

[0016] Fig.10 It is a cross-sectional schematic diagram of a liquid deposition auxiliary device drawn according to some embodiments of the present disclosure.

[0017] Fig.11 According to some embodiments of the present disclosure, Fig.10 Schematic diagram of the cross section drawn along the C-C' tangent line.

[0018] Fig.12 It is a cross-sectional schematic diagram of a liquid deposition auxiliary device drawn according to some embodiments of the present disclosure.

[0019] Fig.13 According to some embodiments of the present disclosure, Fig.12 Schematic diagram of the cross section drawn along the D-D' tangent line.

[0020] Fig.14 is a schematic diagram of a conductive coil drawn according to some embodiments of the present disclosure, showing the current flowing through the conductive coil and Fig.13 The force generated by the interaction between the magnetic fields of the device.

[0021] Figures 15 to 19 It is a schematic diagram of different coating equipment drawn according to various embodiments of the present disclosure.

[0022] Fig. 20 This is a schematic diagram of the arrangement and setting of the vibration module on the coating equipment drawn according to some embodiments of the present disclosure.

[0023] Fig.21 is a schematic diagram of the combined forces of vibration modules on a coating device drawn according to some embodiments of the present disclosure.

[0024] Fig. 22 It is a schematic diagram of a coating device drawn according to some embodiments of the present disclosure.

[0025] Fig.23 It is a schematic cross-sectional view of a vibration module drawn according to some implementation methods of the present disclosure.

[0026] Fig.24 It is a schematic diagram of a coating device drawn according to some embodiments of the present disclosure.

[0027] Fig.25It is a schematic cross-sectional view of a vibration module drawn according to some implementation methods of the present disclosure.

[0028] Fig.26 It is a schematic diagram of a coating device drawn according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0029] This disclosure claims priority from U.S. non-provisional patent application No. 18 / 066,055, filed on December 14, 2022, titled "Device and Apparatus for Stirring Liquids," the entire contents of which are incorporated herein by reference.

[0030] For the details of the electroplating process below, please refer to the following U.S. patent applications: U.S. non-provisional patent application No. 17 / 815,613 filed on July 28, 2022, and the name is translated as interconnect structure and manufacturing method thereof, and U.S. non-provisional patent application No. 17 / 697,937 filed on March 18, 2022, and the name is translated as conductive structure comprising phosphorus copper alloy and method for preparing the conductive structure.

[0031] The content disclosed below provides many different embodiments or examples for realizing the different features of the subject matter proposed herein. Specific examples of components and arrangement settings are described below to simplify this disclosure. Of course, these descriptions are only examples and are not intended to limit this disclosure. For example, in the following description, a first feature is formed above or on a second feature, and an embodiment in which the first feature and the second feature are formed to be in direct contact may be included, and an embodiment in which additional features are formed between the first feature and the second feature, so that the first and second features may not be in direct contact. In addition, this disclosure may reuse component numbers and / or symbols in various embodiments. This repetition is based on the purpose of simplicity and clarity, and does not itself determine the various embodiments discussed, and / or the relationship between the configurations.

[0032] In addition, for ease of description, spatially relative terms such as "below", "below", "lower", "above", "higher" and the like may be used herein to describe the relationship between one element or feature shown in the figures and another element or feature. These spatially relative terms may also encompass different orientations of the device shown in use or operation in addition to the orientations depicted in the figures. The device may be configured in other orientations (e.g., rotated 90 degrees or other orientations), and the spatially relative terms used herein may be interpreted accordingly in a similar manner.

[0033] Although the numerical ranges and parameters used to define the broader scope of this disclosure are approximate values, the relevant numerical values ​​in the specific embodiments have been presented as accurately as possible. However, any numerical value inherently inevitably contains standard deviations due to individual testing methods. Here, the words "approximately", "substantially", "substantially" and "about" are used to describe and explain slight variations. When used in conjunction with an event or situation, these terms can refer to the exact situation of the event or situation, as well as the highly approximate situation of the event or situation. For example, when used in conjunction with a numerical value, these terms can be a range of less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, two values ​​may be considered "substantially" the same or equal if the difference between them is less than or equal to ±10% of the mean, e.g., less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, substantially parallel may refer to an angular variation range of less than or equal to ±10° relative to 0°, e.g., less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, substantially vertical can refer to an angle range relative to 90° that is less than or equal to ±10°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. Therefore, unless otherwise stated, the numerical parameters set forth in this disclosure and the attached claims are approximate values ​​that can be varied as needed. At least these numerical parameters should be understood as: the number of significant digits indicated, and the numerical values ​​obtained by applying the general system. Here, the numerical range is expressed as: from one endpoint to another endpoint, or between two endpoints. Unless otherwise stated, the numerical ranges described herein all include the endpoints.

[0034] Plating is a common process in conventional methods for manufacturing semiconductor components or printed circuit boards (PCBs); however, this process often faces the problem of uneven wafer distribution, resulting in defects in advanced process nodes. Electroless plating and electroplating are two common plating processes used when manufacturing thin films on workpieces. Electroless plating (also known as chemical plating or autocatalytic plating) is a process for producing metal or metal alloy coatings on various materials through an autocatalytic chemical reduction reaction of metal cations in a liquid tank, wherein the workpiece to be plated (e.g., a wafer or substrate) is immersed in a reducing agent, which converts metal ions into metals that form a coating on the workpiece under the catalysis of certain materials. In general, the advantages of electroless plating processes include compatibility and product quality; however, for the same thickness of film, the processing time of electroless plating is longer than that of electroplating. In some cases, electroless plating processes can be used for conductive workpieces and non-conductive workpieces, including workpieces with smaller sizes or smaller surface areas. In contrast, electroplating is a process for forming metal coatings on various materials through externally generated electric current. Advantages of electroplating processes include higher efficiency and throughput; however, electroplating may be less compliant and product quality may be lower than with electroless processes.

[0035] The present disclosure provides a liquid deposition auxiliary device and a liquid deposition apparatus, wherein the apparatus includes a device for improving the efficiency of film coating. The apparatus of the present disclosure can be used in electroless plating processes and electroplating processes. In addition, the scheme of the present disclosure can effectively improve the ion distribution in the film coating chamber, and thus form a more uniform film on the workpiece.

[0036] Reference Figure 1 and Figure 2 , Figure 1 FIG. 1 is a top view of a liquid deposition auxiliary device 500 according to some embodiments of the present disclosure, and Figure 2 Draw a mark Figure 1 Schematic cross-sectional view of the device 500 along the line segment A-A'. The device 500 may include a frame 51, a first magnetic field generator 52, a second magnetic field generator 53, a flexible film 54, and a conductive coil 541 located in the flexible film 54. In some embodiments, the frame 51 includes a bottom 511 and a side wall 512, wherein the side wall 512 is connected to the bottom 511 and forms an angle with the bottom 511. In some embodiments, the side wall 512 surrounds the bottom 511. In some embodiments, the appearance of the frame 51 is square or rectangular, such as Figure 1 In some embodiments, the frame 51 has an open box-shaped structure, with its opening facing upward (for example, opening upward along the Z direction), as shown in FIG. Figure 2In some embodiments, the frame 51 comprises polyimide (PI), polytetrafluoroethylene (PTFE, or Teflon), vinyl, polypropylene (PP), polyvinyl chloride (PVC), polyvinylidene difluoride (PVDF), stainless steel, other suitable materials or combinations thereof. In some embodiments, the frame 51 is made of a magnetic conductive material.

[0037] The first magnetic field generator 52 may be disposed at the bottom 511 of the frame 51. In some embodiments, the first magnetic field generator 52 is disposed in the frame 51 and attached to the inner bottom surface 51A of the frame 51. In some embodiments, the first magnetic field generator 52 is disposed at the central portion of the bottom 511 of the frame 51. The configuration of the first magnetic field generator 52 in the top view may be adjusted according to different applications. Figure 1 In the top view shown, the first magnetic field generator 52 is configured as a rectangle. The first magnetic field generator 52 is used to provide a first magnetic field, which is at least partially perpendicular to the bottom 511 of the frame 51. The first magnetic field generator 52 may include one or more magnets. In some embodiments, one or more magnets may be permanent magnets. In some embodiments, the permanent magnets include neodymium (Nd), iron (Fe), boron (B), alloys thereof, or combinations thereof. In some embodiments, the first magnetic field generator 52 includes Figure 1 In other words, the north (N) pole and the south (S) pole of the magnet of the first magnetic field generator 52 are arranged in a direction substantially perpendicular to the bottom 511 (such as the Z direction). In some embodiments, the S pole of the magnet of the first magnetic field generator 52 is attached to the inner bottom surface 51A, the N pole of the magnet of the first magnetic field generator 52 is above the S pole, and the first magnetic field is in an upward direction perpendicular to the inner bottom surface 51A. For ease of description, when the magnetic field generator 52 or 53 includes only one magnet, the magnetic field generator 52 or 53 may be referred to as the magnet 52 or 53.

[0038] The second magnetic field generator 53 may be disposed at the side wall 512 of the frame 51 and adjacent to the flexible membrane 54. In some embodiments, the second magnetic field generator 53 is disposed in the side wall 512 at an end opposite to the bottom 511. It should be noted that, depending on the application, the second magnetic field generator 53 may be located entirely or partially within the side wall 512; therefore, the provided figures are for illustration only and are not intended to limit the present disclosure. The second magnetic field generator 53 may include one or more magnets. In some embodiments, the second magnetic field generator 53 includes magnets 531, 532, 533, and 534, which are disposed in the side wall 512 surrounding the bottom 511. The magnets of the second magnetic field generator 53 may be distributed as evenly as possible to surround the bottom 511 of the frame 51. In some embodiments, from Figure 1 and Figure 2 From the perspective of the embodiment, each magnet 531, 532, 533 and 534 has an elongated structure extending along a portion of the side wall 512. In some embodiments, the magnets 531 and 533 are disposed at two opposite portions 512a and 512b of the side wall 512. In some embodiments, the magnets 532 and 534 are disposed between the magnets 531 and 533 and are located at the other two opposite portions of the side wall 512, such as Figure 1 shown.

[0039] The second magnetic field generator 53 is used to provide a second magnetic field at least partially parallel to the bottom 511 of the frame 51. In some embodiments, the N pole and the S pole of each magnet 531, 532, 533 and 534 of the second magnetic field generator 53 are arranged in a direction substantially parallel to the bottom 511 (e.g., the X direction). In some embodiments, the S pole of each magnet 531, 532, 533 and 534 faces the inside of the frame 51, and the N pole of each magnet 531, 532, 533 and 534 faces the outside of the frame 51.

[0040] The flexible film 54 is attached to the frame 51 via a peripheral portion 543 of the flexible film 54. In some embodiments, the peripheral portion 543 of the flexible film 54 can be fixed to the side wall 512 of the frame 51 in various ways. The flexible film 54 can be substantially parallel to the bottom 511 of the frame 51. In some embodiments, the flexible film 54 completely covers or overlaps the bottom 511 of the frame 51. In some embodiments, the flexible film 54 includes polyimide (PI), polyethylene terephthalate (PET), Ajinomoto Build-up Film (ABF), other suitable materials or combinations thereof. The flexible film 54 is used to provide vibration motion to the plating solution during deposition. The flexible membrane 54 and the frame 51 define a resonant cavity together, and the distance d1 between the flexible membrane 54 and the inner bottom surface 51A defines the height of the resonant cavity. The distance d1 can be adjusted according to the medium filled in the resonant cavity to optimize the efficiency of the coating vibration (or deposition). The following paragraphs will further explain in detail.

[0041] like Figure 1 As shown, in some embodiments, the flexible membrane 54 includes a suspension 542 used as a spring to promote the vibration amplitude of the flexible membrane 54, especially at a low vibration frequency of the flexible membrane 54. In some embodiments, the suspension 542 is an annular structure with an interruption at the coil wiring (such as the lower end) to avoid affecting the reliability of the coil. It should be noted that in different applications, the annular shape of the suspension 542 can be circular, square, hexagonal or other suitable shapes. Figure 1 The circular ring-shaped hanging edge 542 shown is according to an exemplary embodiment, and the present disclosure is not limited thereto.

[0042] The conductive coil 541 is connected to the flexible membrane 54 and forms a spiral with respect to a coil axis that is substantially perpendicular to the bottom 511 of the frame 51. In some embodiments, the conductive coil 541 is disposed within the flexible membrane 54. In some embodiments, the conductive coil 541 is surrounded or sealed by the flexible membrane 54. In some embodiments, the conductive coil 541 is located in the central area of ​​the flexible membrane 54 and is surrounded by the hanging edge 542. In some embodiments, the conductive coil 541 comprises aluminum (Al), copper (Cu) or other suitable conductive materials. In different applications, the conductive coil 541 is Figure 1 The configuration in the top view may be different. For the purpose of understanding and description, the conductive coil 541 may be regarded as a component of the flexible membrane 54 .

[0043] Reference Figure 3A and 3B , Figure 3A and3B FIG. 5 is a top view of a conductive coil 541 for use in an auxiliary liquid deposition apparatus 500 according to various embodiments of the present disclosure. In some embodiments, Figure 3A As shown, the conductive coil 541 is a circular structure in the top view. Figure 3B As shown, the conductive coil 541 is a rectangular structure in the top view. In some embodiments, the conductive coil 541 has a coil center axis 541a perpendicular to the XY plane of the flexible film 54, and the conductive coil 541 is centered on the center axis 541a and extends outward in a spiral shape. It should be noted that Figure 3A and 3B The configuration shown is drawn for illustrative purposes only and is not intended to limit the present disclosure. As described above, the configuration of the conductive coil 541 can be designed according to different applications.

[0044] The two ends of the conductive coil 541 are connected to conductive wires 545a and 545b. The conductive wires 545a and 545b may be made of aluminum (Al), copper (Cu) or other suitable conductive materials as described above. In some embodiments, the conductive wires 545a and 545b may be sealed or encapsulated by the flexible film 54. In some embodiments, the conductive wires 545a and 545b extend to the portion of the flexible film 54 outside the annular hanging edge 542 through the interruption of the hanging edge 542. The conductive wires 545a and 545b are used to conduct the current of the conductive coil 541.

[0045] Refer to previous Figure 1 and Figure 2 , the device 500 may further include a plurality of fixing components 55 (for fixing the second magnetic field generator 53 to the frame 51). The fixing components 55 may include stakes, nails, screws, rivets, and other suitable fasteners or combinations thereof. In some embodiments, the fixing components 55 are made of a magnetically conductive material. The fixing components 55 may be inserted from the upper surface 51C of the frame 51 into the side wall 512 and extend into each magnet 531, 532, 533, and 534 of the second magnetic field generator 53. The fixing components 55 extend into each magnet 531, 532, 533, and 534 along a vertical direction (such as the Z direction), or pass through each magnet 531, 532, 533, and 534. In some embodiments, at least one fixing component 55 passes through at least one of the through magnets 531, 532, 533, and 534, such as Figure 2 In some embodiments, at least one fixing member 55 penetrates the peripheral portion 543 of the flexible membrane 54 .

[0046] Reference Figure 4 , Figure 4A schematic diagram of magnetic field lines established by the first magnetic field generator 52 and the second magnetic field generator 53 of the device 500 according to some embodiments of the present disclosure is shown. The first magnetic field generator 52 (hereinafter also referred to as "magnet") and the magnet 531 of the second magnetic field generator 53 (hereinafter also referred to as "magnet") jointly establish a magnetic field B21 (such as the dotted line with an arrow to represent the magnetic field B21, and the dotted line with an arrow can be understood as the magnetic field lines of the magnetic field B21). Due to the effect of the magnetic field B12 in the magnet 52, the portion of the magnetic field B21 adjacent to the magnet 52 has a magnetic field direction perpendicular to the bottom of the frame 51 (such as the Z direction), and the portion of the magnetic field B21 adjacent to the upper part of the flexible film 54 has a magnetic field direction substantially parallel to the flexible film 54. Then the magnetic field B21 enters the magnet 531 along the horizontal -X direction from the inner wall 51E to the outer wall 51D of the frame 51, as shown by the magnetic field B11 (the magnetic field B11 can be understood as the magnetic field in the magnet 531), and then circulates back to the magnet 52 through the magnetic conduction path in the frame 51 (for example, the frame 51 can be made of magnetic conductive material). The magnetic field in the magnet 52 is marked as B12, which contacts the starting point of the magnetic field B21 to form a closed loop. Figure 4 The magnetic fields B12, B21, and B11 depicted in FIG. 1 can be Figure 1 The magnetic field loop design established by the cross section along the A-A' line segment.

[0047] Similarly, the first magnetic field generator 52 (hereinafter also referred to as "magnet") and the magnet 533 of the second magnetic field generator 53 jointly establish a magnetic field B22 (such as the dotted line with an arrow to represent the magnetic field B22, and the dotted line with an arrow can be understood as the magnetic field line of the magnetic field B22). Due to the effect of the magnetic field B12 in the magnet 52, the part of the magnetic field B22 adjacent to the magnet 52 has a magnetic field direction perpendicular to the bottom of the frame 51 (such as the Z direction), and the part of the magnetic field B22 adjacent to the upper part of the flexible film 54 has a magnetic field direction substantially parallel to the flexible film 54. Then the magnetic field B22 enters the magnet 533 from the inner wall 51E to the outer wall 51D of the frame 51 along the horizontal direction (+X direction), as shown by the magnetic field B13 (the magnetic field B13 can be understood as the magnetic field in the magnet 533), and then circulates back to the magnet 52 through the magnetic conduction path in the frame 51. The magnetic field B12 in the magnet 52 contacts the starting point of the magnetic field B22 and forms a closed loop. Figure 4 The magnetic fields B12, B22, and B13 depicted in FIG. 1 may be Figure 1 The magnetic field loop design established by the cross section along the A-A' line segment.

[0048] Reference Figure 5 , Figure 5 is a schematic diagram of the conductive coil 541, which illustrates the above reference Figure 1The interaction between the current flowing through the conductive coil 541 and the magnetic fields B21 and B22 generates a force applied to the conductive coil 541. At time point T1, the current C can flow along Figure 5 In the counterclockwise direction as indicated by the arrow in the middle, the current C flows in the conductive coil 541. At time point T2, the current C can flow in the conductive coil 541 in the clockwise direction ( Figure 5 (not shown). For example, the magnetic field B21 is substantially parallel to the plane of the conductive coil 541 and points in the -X direction. According to the Lorentz force equation (I), where q is the charge in the coil, V is the velocity of the electron, E is the electric field, B is the magnetic field, and F is the electromagnetic force exerted on the charge in the coil. Figure 5 As shown in the example, when the external magnetic fields B21 and B22 are respectively established at the left and right parts of the conductive coil 541, the force F is applied to the charge in the coil; and therefore, the body of the conductive coil 541 and the flexible film 54 connected thereto, in the absence of an external electric field E, the force F is directed inward or toward the paper (i.e., into the paper surface, or away from the paper surface). Figure 5 direction of the observer).

[0049] F=q(E+V×B)(I)

[0050] Therefore, the flexible film 54 is subjected to a force F directed inward or toward the paper. On the contrary, when the current C flows through the conductive coil 541 in a clockwise direction ( Figure 5 In some embodiments, the current C may be an alternating current or a direct current. When the conductive coil 541 is connected to an AC power source or a DC power source having a duty cycle between 1% and 90%, the flexible membrane 54 will produce a vibrating motion. In some embodiments, the duty cycle of the AC power source or the DC power source is 50%. The vibrating motion of the flexible membrane 54 provides physical agitation to the plating solution, and thus can improve the efficiency of liquid deposition. The vibration of the device 500 provides mechanical agitation of different intensities to the plating solution in the coating chamber, which promotes the movement and collision of the reaction reagents, and thus can improve the efficiency of liquid deposition. In addition, the uniformity of the coating film formed on the workpiece using the coating process can also be improved.

[0051] Refer to previous Figure 2The distance d1 between the flexible membrane 54 and the inner bottom surface 51A defines the height of the resonant cavity of the device 500. The distance d1 can be adjusted according to the material in the resonant cavity to control the vibration efficiency of the flexible membrane 54. When the distance d1 is equal to an integer multiple of the wavelength of the sound wave, the vibration efficiency is optimal, as defined by the following equation (II), where n is an integer, λ is the wavelength of the sound wave, v is the speed of sound, and f is the frequency of the sound wave.

[0052] d1=nλ=nv / f(II)

[0053] In some embodiments, the resonance cavity is filled with air, and the vibration medium of the device 500 is air. Therefore, the speed of sound v should be about 330 meters per second (m / s), which is the propagation speed of sound in air. When n=1 (in order to minimize the thickness of the device 500 and optimize the vibration efficiency), according to different embodiments of the present disclosure, the sound wave frequency f obtained by equation (II) and the corresponding distance d1 (i.e., the height of the resonance cavity) are shown in Table 1 below.

[0054] Table 1

[0055] f(kHz) d1(cm) 1.65 20 3.3 10 6.6 5 13.2 2.5 26.4 1.25

[0056] The device 500 described above can provide vibration to enhance the efficiency of liquid deposition. The thickness of the device 500 can be adjusted by adjusting the distance d1 as described above. However, Figure 1 and Figure 2 The device 500 shown is an exemplary embodiment for illustrating the concepts of the present disclosure and is not intended to limit the present disclosure.

[0057] In this disclosure, multiple embodiments of this disclosure have the same inventive concept as described above. For the sake of clarity and conciseness, element symbols with the same or similar functions are reused in different embodiments. However, this approach is not intended to limit this disclosure to a specific embodiment or a specific element. For the sake of brevity, the following description only focuses on the differences from other embodiments, and omits descriptions of similar or identical components, functions and characteristics. In addition, the conditions or parameters described in different embodiments can be combined or modified to obtain different combinations of embodiments, as long as the parameters or conditions used do not conflict.

[0058] Reference Figure 6 , Figure 6A cross-sectional schematic diagram of a liquid deposition auxiliary device 501 according to some embodiments of the present disclosure is shown. In some embodiments, the flexible membrane 54 is adhered or otherwise fixed to the upper surface 51C of the side wall 512 of the frame 51. In some embodiments, the flexible membrane 54 can be completely disposed above the frame 51. The flexible membrane 54 can be fixed to the frame 51 using adhesive, silicone, a fixing member 55, or other appropriate materials. In some embodiments, the fixing member 55 is used to fix the flexible membrane 54, and the arrangement and setting of the fixing member 55 is the same as that of the fixing member 55. Figure 2 In some embodiments, the fixing member 55 is inserted into the side wall 512 from the upper surface 51C of the frame 51, thereby fixing the flexible membrane 54 on the upper surface 51C (similar to Figure 2 shown, but Figure 6 In some embodiments, the flexible film 54 is fixed to the frame 51 by using adhesive or silicone, and the second magnetic field generator 53 is fixed by using a fixing member 55, such as Figure 6 In some embodiments, the fixing member 55 is inserted from the outer wall surface 51D of the frame 51 into the side wall 512, as shown in FIG. Figure 6 In some embodiments, the fixing member 55 is inserted from the inner side wall 51E of the frame 51 into the side wall 512 (not shown). The fixing member 55 may or may not penetrate the second magnetic field generator 53. In some embodiments, the fixing member 55 extends into the second magnetic field generator 53 and stops therein, such as Figure 6 Similarly, the fixing member 55 may or may not penetrate the side wall 512 of the frame 51. The top view of the device 501 may be the same as Figure 1 The top view of the device 500 is similar and will not be described again. Due to the arrangement of the flexible membrane 54 on the frame 51 , the thickness of the device 501 can be less than the thickness of the device 500 .

[0059] Reference Figure 7 and Figure 8 , Figure 7 A top view of the liquid deposition auxiliary device 502 is shown, and Figure 8 According to some embodiments of the present disclosure, Figure 7 The device 502 is a schematic cross-sectional view along the line segment BB'. The device 502 is similar to the device 500, but includes an annular magnet 52 and an annular conductive coil 541 with a loose center (or hollow). The conductive coil 541 of the device 502 may be similar to the conductive coil 541 of the device 500, but the diameter of the innermost circle of the conductive coil 541 of the device 502 is greater than the diameter of the innermost circle of the conductive coil 541 of the device 500. Fig.9A and Fig. 9B A schematic top view of a configuration of a conductive coil 541 of a device 502 according to some embodiments of the present disclosure is shown. Fig.9A and Fig. 9B The exemplary embodiments are used to illustrate the concepts of the present disclosure and are not intended to limit the present disclosure.

[0060] Reference Fig.10 and Fig.11 , Fig.10 A top view of the liquid deposition auxiliary device 503 is shown, and Fig.11 Some embodiments of the present disclosure are shown. Fig.10 The schematic cross-sectional view of the device 503 shown along the line segment CC'. In some embodiments, the device 503 includes a plurality of flexible membranes (e.g., 54a and 54b) that are vertically arranged and substantially parallel to each other. In some embodiments, the flexible membrane 54a is located above the flexible membrane 54b and is separated from the flexible membrane 54b by a distance d2. The distance d2 defines the height of the resonant cavity of the flexible membrane 54a and is equal to the distance between the flexible membrane 54a and the flexible membrane 54b. In some embodiments, the distance d2 is substantially equal to the distance d1, so that the resonant frequency of the resonant cavity of the flexible membrane 54a is equal to the resonant frequency of the resonant cavity of the flexible membrane 54b, so as to maximize the vibration efficiency of the device 503. In some embodiments, from Fig.10 The top view and Fig.11 As seen from the cross-sectional view, the flexible film 54a and the flexible film 54b are entirely overlapped.

[0061] The flexible film 54a may be similar or identical to the flexible film 54 of the device 500, and the flexible film 54b is disposed between the flexible film 54a and the bottom 511 of the frame 51. The flexible film 54b may be similar or identical to the flexible film 54 of the device 502, but further includes an opening 544, which allows the structure 523 connecting the magnet 521 and the magnet 522 to pass through. The conductive coil 541b connected to the flexible film 54b may also avoid the opening area and allow the connecting structure 523 to pass through (for example, the conductive coil 541b may be similar to the flexible film 54a). Fig.9A and Fig. 9B 541b can be similar or substantially the same as the conductive coil 541 of the device 502. In some embodiments, the conductive coil 541b spirals outward from a point adjacent to the opening 544.

[0062] In order to generate a magnetic field parallel to at least a portion of the flexible film 54a and a portion of the flexible film 54b, the first magnetic field generator 52 may include a plurality of magnets (e.g., 521 and 522), wherein the magnets are arranged vertically along the Z axis. In some embodiments, the magnet 521 of the first magnetic field generator 52 is disposed at the bottom 51 (or the inner bottom surface 51A) of the frame 51. The arrangement of the magnet 521 may be similar to the arrangement of the magnet 52 of the above-mentioned device 500, and will not be repeated here. In some embodiments, the magnet 522 of the first magnetic field generator 52 is arranged between the flexible films 54a and 54b. In some embodiments, the ratio between the distance d21 and the distance d22 is in the range of 1:4 to 3:2, wherein the distance d21 is measured from the flexible film 54a in the vertical direction to the center line of the magnet 522 (indicated by the dotted line), and the distance d22 is measured from the center line of the magnet 522 to the flexible film 54b. Fig.11 The width W1 of the magnet 521 can be less than, substantially equal to, or greater than the width W2 of the magnet 522. In some embodiments, the width of the magnet 522 is less than the width of the magnet 521, such as Fig.11 In order to minimize the negative impact of magnet 522 on the resonance efficiency of device 503 on the solution, the width W1 of magnet 521 is between 1 / 3 and 1 / 2 of the width W3 of chamber frame 51 (or between the corresponding inner sidewall 51E surfaces). Fig.10 The top view and Fig.11 From the cross-sectional view, the magnet 522 is smaller than the magnet 521. It should be noted that in the top view, the shapes of the magnets 521 and 522 are not limited to Fig.10 The circle shown. Fig.10 The circular shape of the magnets 521 and 522 shown in FIG. 5 is an exemplary embodiment for illustration purposes. In addition, the magnets 521 and 522 may have different shapes depending on the application.

[0063] The magnet 522 may be supported by a connection structure 523. In some embodiments, the connection structure 523 is disposed between the magnets 521 and 522 and is magnetically connected to the magnets 521 and 522. In some embodiments, the connection structure 523 passes through the opening 544 of the flexible membrane 54b. In some embodiments, the connection structure 523 includes a magnetically conductive material. When the connection structure 523 includes a magnetically conductive material, the connection structure 523 may be considered as a part of the first magnetic field generator 52.

[0064] The second magnetic field generator 53 may include magnets arranged vertically. The second magnetic field generator 53 may include a plurality of first magnets 53a, which overlap vertically with a plurality of second magnets 53b. In some embodiments, the plurality of first magnets 53a include magnets 531a, 532a, 533a, and 534a, which are arranged similarly to Figure 1 and Figure 2 The device 500 shown in FIG. 5 shows an arrangement of magnets 531, 532, 533, and 534 in the second magnetic field generator 53. In some embodiments, the plurality of second magnets 53b include magnets 531b, 532b, 533b, and 534b that are vertically aligned with the magnets 531a, 532a, 533a, and 534a, respectively. In some embodiments, each magnet 531a, 532a, 533a, and 534a in the plurality of first magnets 53a is fixed to the frame 51 by one or more fixing members 55a. Fig.10 The fixing member 55a can be formed from the upper surface 51C (such as Figure 8 ), inner wall 51E, or outer wall 51D (such as Figure 6 ), extending horizontally or vertically (or inserted) into the side wall 512 of the frame 51. In some embodiments, each magnet 531b, 532b, 533b and 534b in the plurality of second magnets 53b is fixed to the frame 51 by one or more fixing members 55b. Fig.10 The fixing member 55b can be formed from the inner wall surface 51E or the outer wall surface 51D (such as Figure 6 ), extending horizontally (or inserted) into the side wall 512 of the frame 51.

[0065] The plurality of first magnets 53a may be disposed above the flexible film 54a and adjacent to the upper surface 51C of the frame 51. In some embodiments, the magnets 531a, 532a, 533a, and 534a are disposed in a peripheral region 543a adjacent to the flexible film 54a. The magnet 522 and the plurality of first magnets 53a may generate a magnetic field, similar to the above reference. Figure 4 The magnetic fields B21 and B22 described above, when current is provided to the conductive coil 541a of the flexible film 54a, can generate vibration movement of the flexible film 54a.

[0066] The plurality of second magnets 53b may be disposed between the flexible films 54a and 54b and adjacent to the flexible film 54b. In some embodiments, the magnets 531b, 532b, 533b, and 534b are disposed in a peripheral region 543b adjacent to the flexible film 54b. The magnet 521 and the plurality of second magnets 53b may generate a magnetic field, similar to the above reference. Figure 4 The magnetic fields B21 and B22 described above, when current is provided to the conductive coil 541b of the flexible film 54b, can generate vibration movement of the flexible film 54b.

[0067] Reference Fig.12 and 13 , Fig.12 A top view of the liquid deposition auxiliary device 504 is shown, and Fig.13 Some embodiments of the present disclosure are shown. Fig.12 The device 504 is a schematic cross-sectional view along the line segment D-D'. The device 504 may be similar to the device 500, but Fig.12 In the top view of the embodiment of the present invention, the frame 51 has different configurations of the frame 51 and different appearances of the second magnetic field generator 53. In some embodiments, the frame 51 is in a circular configuration in the top view. In some embodiments, the second magnetic field generator 53 includes an annular magnet (the second magnetic field generator 53 may be referred to as the magnet 53 herein). In some embodiments, the magnet 53 extends along the side wall 512 of the frame 51, wherein the side wall 51 is in an annular configuration. In some embodiments, the magnet 53 is sealed and fixed in the side wall 512 without using the fixing member 55.

[0068] In addition, the device 504 may be similar to the device 500, but the polarity configuration of the first and second magnetic field generators 52 and 53 is opposite to that of the above device. Figure 4 The first and second magnetic field generators 52 and 53 of the device 500 are shown. The first magnetic field generator 52 (hereinafter also referred to as "magnet") and a portion 531 of the second magnetic field generator 53 (hereinafter also referred to as "magnet") jointly establish a magnetic field B21 (e.g., the magnetic field lines are represented by dashed lines with arrows). The magnetic field B21 is adjacent to one end of the magnet 52 and has a directivity perpendicular to the bottom of the frame 51, and the other end of the magnetic field B21 is adjacent to the portion 531 of the magnet 53 and has a directivity substantially parallel to the plane defined by the flexible film 54. Then the magnetic field B21 enters the magnet 52, connects with the magnetic field B12 established in the magnet 52, and then circulates back to the portion 531 of the magnet 53 through the magnetic conduction path in the frame 51 (for example, the frame 51 can be made of a magnetically conductive material). The magnetic field in the portion 531 of the magnet 53 is marked as B11, which contacts the starting point of the magnetic field B21 to form a closed loop. Fig.13 The magnetic fields B11, B21 and B12 depicted in FIG. 1 can be Fig.12 The magnetic field loop design established along the cross section of the D-D' line segment.

[0069] Similarly, the first magnetic field generator 52 (hereinafter also referred to as "magnet") and a portion 533 of the second magnetic field generator 53 (hereinafter also referred to as "magnet") jointly establish a magnetic field B22 (e.g., depicted and represented by magnetic lines of force). The magnetic field B22 is adjacent to one end of the magnet 52 and has a directivity perpendicular to the bottom of the frame 51, and the other end of the magnetic field B22 is adjacent to the portion 533 of the magnet 53 and has a directivity substantially parallel to the plane defined by the flexible film 54. The magnetic field B22 then enters the magnet 52, connects with the magnetic field B12 established in the magnet 52, and then circulates back to the portion 533 of the magnet 53 through the magnetic conduction path in the frame 51 (for example, the frame 51 can be made of a magnetically conductive material). The magnetic field in the portion 533 of the magnet 53 is labeled as B13, which contacts the starting point of the aforementioned magnetic field B22 to form a closed loop. Fig.13 The magnetic fields B13, B22 and B12 depicted in Fig.12 The magnetic field loop design established along the cross section of the D-D' line segment.

[0070] Reference Fig.14 , Fig.14 is a schematic diagram of a conductive coil 541 of the device 504, and the force applied to the conductive coil 541 is shown in the figure, which is caused by the current flowing through the conductive coil 541 and the above Fig.13 The interaction between the magnetic fields B21 and B22 generates. According to the Lorentz force equation (I) described above, the flexible film 54 is subjected to a force F that is directed away from the paper (i.e., toward Fig.14 The vibration motion applied by the flexible film 54 to the plating solution provides physical agitation to the plating solution, thereby improving the efficiency of liquid phase deposition. The vibration of the device 504 provides mechanical agitation of different intensities to the plating solution in the plating chamber, promotes the movement and collision of the reaction reagents, and thereby improves the efficiency of liquid phase deposition. In addition, the uniformity of the plating film formed on the workpiece using the plating process can also be improved.

[0071] Reference Fig.15 , Fig.15 A schematic side view of a coating device 201 according to some embodiments of the present disclosure is shown. The coating device 201 includes a liquid deposition device. The coating device 201 includes a chamber 11 and one or more vibration modules 20. The chamber 11 is used to accommodate a coating liquid and a workpiece SB disposed in the chamber 11, which may be a semiconductor substrate, a wafer, a printed circuit board, or the like, so that a coating film can be formed on the workpiece SB. It should be noted that the workpiece SB shown in the figure is only for illustrating its relative position in the chamber 11. In the coating process, the workpiece SB is located in the chamber 11, and it can be disposed on a base, a bracket, or any support member (such as Fig.26The support structure 80 shown in the figure, see the relevant paragraph for details) is used to fix the workpiece SB and expose its surface to be plated. In addition, the number or orientation of the workpiece SB shown in the figure is for illustration only. In some embodiments, a plurality of workpieces SB can be arranged in the chamber 11. The orientation of the workpiece SB can be along the horizontal direction (for example, along the lower wall 114 or the lower wall 115 of the chamber 11). Fig.15 ), or in a vertical direction (e.g., substantially perpendicular to the lower wall 114 or Fig.15 In some embodiments, the workpiece SB shown in the figure may represent an area where one or more substrates are placed, and a coating film may be formed on all exposed surfaces of one or more substrates in the area. In some embodiments, the coating film may be a copper phosphorus film (which may include Cu3P) or a copper film.

[0072] One or more vibration modules 20 are disposed adjacent to at least one of the side walls 111 and 113 of the chamber 11. In some embodiments, the vibration module 20 is partially disposed within the side wall 111 of the chamber 11, or is partially enclosed by it. In some embodiments, the vibration module 20 refers to one or more individual devices 505 or 506. Each device 505 or 506 can be similar to the above figure and one of the devices 500, 501, 502, 503 and 504 shown above. In order to make the flexible membrane of the device 505 or 506 contact the plating solution in the chamber 11, the opening side of the fixed flexible membrane should be adjacent to the inner surface 111A or 113A of the side wall 111 or 113, so as to face and contact the plating solution. In some embodiments, the outer bottom surface of the frame of the device 505 or 506 (for example, Figure 2 , 6 , 8, 11, or 13), adjacent to or facing the outer surface 111B or 113B of the side wall 111 or 113. In some embodiments, the top surface of the device 505 or 506 frame (e.g., Figure 2 , 6 , 8, 11, or 13) near the inner surface 111A or 113A. In some embodiments, electronic components or parts connected to the device 505 or 506 (e.g., wires that provide an electrical path to the conductive coil of the device 505 or 506, or a processing unit that controls the electrical connection to the conductive coil) can be enclosed in the side wall 111 or 113 of the side wall 111, or at least accessible from the outer surface 111B or 113B of the side wall 111 or 113 to facilitate maintenance.

[0073] like Fig.15As shown, the first magnetic field generator of each device 505 or 506, such as the first magnetic field generator 52 of the device 500, 501, 502, 503 and / or 504, together provides a magnetic field B1 along the entire horizontal direction (e.g., X direction) of the chamber 11. In some embodiments, all the first magnetic field generators of the device 505 or 506 have the same polarity and are arranged side by side in the same direction (e.g., the S pole is on the left and the N pole is on the right), so that the direction of the magnetic field B1 is from the side wall 111 of the chamber 11 toward the side wall 113, such as Fig.15 In some other embodiments, all first magnetic field generators of the device 505 or 506 have the same polarity and are arranged side by side in the same direction (e.g., the N pole is on the left and the S pole is on the right), so that the direction of the magnetic field B1 is from the side wall 113 of the chamber 11 toward the side wall 111 ( Fig.15 According to the Lorentz force equation (I) described above, as the vibration module 20 causes the plating solution to vibrate, the presence of the magnetic field B1 generates a force F applied to the charged (positive or negative) ions / positive type reagents in the plating solution, causing the charged ions / reactants to be guided to move along a downward spiral trajectory, increasing the possibility of the positive type reagents colliding with the atoms on the surface of the workpiece SB, and finding sites with lower Gibbs free energy for nucleation, thereby improving the growth efficiency and uniformity of the coating.

[0074] It should be noted that the number of devices in each vibration module 20 is not limited herein. Fig.15 The five devices 50 and five devices 506 shown are for illustration only.

[0075] The coating apparatus 201 may further include a plurality of conduits. In some embodiments, the coating apparatus 201 includes one or more conduits 71 extending through the upper wall 112 of the chamber 11 and providing a liquid path to and from the chamber 11. In some embodiments, the conduit 71 is used to deliver chemicals or plating solutions to the chamber 11. In some embodiments, the coating apparatus 201 includes one or more conduits 72 extending through the lower wall 114 of the chamber 11 and providing a liquid path to and from the chamber 11. In some embodiments, the conduit 72 is used to extract chemicals or plating solutions from the chamber 11.

[0076] The coating equipment proposed in this disclosure includes a plurality of vibration modules, each of which includes at least one liquid deposition auxiliary device. The interaction between the local magnetic field established by the magnetic field generator of the device and the current flowing through the conductive coil of the device generates a force, which causes the vibration of the flexible membrane of the vibration module. The interaction between the magnetic field established by each individual magnetic field generator of the device and the charged ions / reactants in the plating solution generates a force, which causes the spiral trajectory of the charged ions / reactants. In the coating process, vibration helps to stir or agitate the plating solution in the coating chamber, and the magnetic field provides a spiral trajectory for the charged ions / reactants, thereby improving the coating efficiency and uniformity.

[0077] Reference Fig.16 , Fig.16 A schematic side view of a coating apparatus 202 according to some embodiments of the present disclosure is shown. The coating apparatus 202 may be similar to the coating apparatus 201, but the vibration module 20 thereof is disposed on an inner surface 111A of a side wall 111 and an inner surface 113A of a side wall 113 opposite to the side wall 111 of a chamber 11. In some embodiments, each device 505 or 506 of the vibration module 20 is attached or fixed to the inner surface 111A or 113A with silicone or other suitable materials. Fig.16 The illustrated embodiment has the advantage that the apparatus described in the present disclosure can be more easily integrated into a coating chamber.

[0078] Reference Fig.17 , Fig.17 A schematic side view of a coating apparatus 203 according to some embodiments of the present disclosure is shown. The coating apparatus 203 can be an electroless plating apparatus or an electroplating apparatus, and can be similar to the coating apparatus 201, but further includes a pair of electrodes arranged vertically across the coating apparatus 203. For example, the pair of electrodes includes a positive electrode 63 and a negative electrode 64, which are arranged in the chamber 11 and exposed to the plating solution during the coating process. In some embodiments, the coating apparatus 203 further includes a diaphragm 70, which is arranged above the workpiece SB and between the positive electrode 63 and the negative electrode 64. In some embodiments, the diaphragm 70 is a proton exchange membrane or a polymer electrolyte membrane (PEM). In some embodiments, the diaphragm 70 is a perfluorinated membrane (such as a commercially available The diaphragm 70 is only permeable to positive ions (or positive reaction reagents) used for film deposition, or the diaphragm 70 is permeable to water and cations in the plating solution, thereby improving the quality of the film.

[0079] The positive electrode 63 and the negative electrode 64 provide Fig.17In some embodiments, when the coating device 203 is used as an electroplating device, the positive electrode 63 is electrically connected to the power source 13 during the electroplating operation. In some embodiments, in the electroless plating operation, the coating device 203 is used as an electroless plating device, and the positive electrode 63 is not electrically connected to the power source 13.

[0080] In order to facilitate the coating of a metal or metal-containing alloy film on the workpiece SB, a cationic or positive type reaction reagent should be introduced to the workpiece SB, or Fig.17 The downward direction in the plating solution. Due to the existence of the downward electric field E1, a downward force is exerted on the positive reactant in the plating solution. With the interaction between the magnetic field B1 and the electric field E1, according to the above-mentioned Lorentz force equation (I), the positive reactant is guided to move along a downward spiral trajectory, which increases the possibility of the positive reactant colliding with the atoms on the surface of the workpiece SB: kink, and finds sites with lower Gibbs free energy for nucleation, thereby improving the growth efficiency and uniformity of the coating. In addition, in contrast to the downward movement of the positive reactant, the establishment of the magnetic and electric fields described previously also leads to the upward spiral movement of the negative reactant (which can be understood as negative ions or anions) in the plating solution. If the positive and negative reactants do not separate and collide midway, the upward movement of the negative reactant can prevent the reduction of the positive reactant, which is beneficial to the reduction reaction of the cations on the surface of the workpiece SB, thereby improving the efficiency of liquid phase deposition. In some embodiments, a suitable separator 70 (not shown) may be selected to prevent electrons or cations, or negative reactants from moving upward and being deposited on the positive electrode 63, thereby affecting the function of the positive electrode 63 during the liquid phase deposition process. Therefore, the presence of the separator 70 may improve the quality of the deposited film.

[0081] Reference Fig.18 , Fig.18 A schematic side view of a coating apparatus 204 according to some embodiments of the present disclosure is shown. The coating apparatus 204 can be used as an electroless plating apparatus and can be similar to the coating apparatus 203, but in the electroless plating operation, the positive electrode 61 and the negative electrode 62 need to be separated from the plating solution and electrically isolated. In some embodiments, the positive electrode 61 and the negative electrode 62 are only used to establish an electric field E1 vertically across the coating apparatus 203, but do not contact the plating solution.

[0082] In some embodiments, the coating device 204 includes a positive electrode 61 disposed in the upper wall 112, and a negative electrode 62 disposed in the lower wall 114 (corresponding to the upper wall 112). In some embodiments, the electrodes 61 and 62 are encapsulated by polytetrafluoroethylene (PTFE or Teflon), vinyl, polypropylene (PP), polyvinyl chloride (PVC), polyvinylidene fluoride (PVDF), stainless steel, a suitable dielectric material or other suitable materials, or a combination thereof. In the electroless plating process, the positive electrode 61 and the negative electrode 62 are separated from the plating solution and electrically isolated.

[0083] The positive electrode 61 and the negative electrode 62 are used to provide an electric field E1 vertically across the chamber 11. It should be noted that Fig.18 The size of the arrows shown to indicate the magnetic field B1 and the electric field E1 are for illustration only and should not be used to indicate the coverage or strength of the magnetic field B1 and the electric field E1. Fig.18 The arrow size of is different from the arrow size of other icons, which does not mean that the coverage or strength of the magnetic field B1 and the electric field E1 is the same or different from that of other embodiments. The coverage or strength of the magnetic field B1 or the electric field E1 is determined by the first magnetic field generator 52 of the vibration module 20, or the bias applied to the electrodes 61 and 62. In some embodiments, the positive electrode 61 is electrically connected to the power supply 13, and the negative electrode 62 is grounded. The combination of the magnetic field B1 and the electric field E1 causes the spiral motion of the ions in the plating solution, which facilitates the electroless plating process and increases the deposition rate. In addition, the interaction between the magnetic field and the electric field also causes the upward spiral motion of the anions in the plating solution. Therefore, even in the absence of the diaphragm 70, the coating device 204 of the present disclosure can further improve the coating efficiency by separating the cations and anions in the plating solution.

[0084] Reference Fig.19 , Fig.19 A schematic diagram of a coating apparatus 300 according to some embodiments of the present disclosure is shown. The coating apparatus 300 may be similar to any one of the coating apparatuses 201, 202, 203, and 204, but further includes a current phase adjuster 12. For illustrative purposes, the following description will refer to the above description. Fig.15 The same component numbers are used for the coating apparatus 201 shown.

[0085] The current phase adjuster 12 is used to control the current phase of the conductive coil entering each vibration module 20 to provide more diverse control over the movement of the charged (positive or negative) reactants in the plating solution. In some embodiments, the conductive coil of each device of the vibration module 20 is electrically connected to the current phase adjuster 12. Different conductive coils simultaneously provide currents with different phases so as to locally apply forces F in different directions to the charged reactants (e.g., adjacent conductive coils have a specified phase). Each device 211, 212, 213, 214 and 215 can be similar to one of the devices 500, 501, 502, 503 and 504, as long as they have a consistent magnetic field direction. Similarly, each device 221, 222, 223, 224 and 225 can be similar to one of the devices 500, 501, 502, 503 and 504, as long as they have a consistent magnetic field direction.

[0086] In some embodiments, currents with different phases enter the conductive coils of devices 211 to 215 and 221 to 225. Currents of different phases with constant intervals can be applied to conductive coils arranged in a counterclockwise or clockwise direction. For example, adjacent conductive coils arranged in a counterclockwise direction have a constant interval of current phase difference set by the current phase adjuster 12. In some embodiments, the constant interval of the current phase angle assigned to adjacent conductive coils arranged in a counterclockwise direction can be positive or negative, so that the current phase between adjacent conductive coils can increase or decrease in the counterclockwise direction. The resultant force applied to the charged (e.g., positive or negative) reactants can guide the flow of the reactants in the counterclockwise direction. Macroscopically, for example, it will form Fig.19 Center: Flow direction indicated by arrows.

[0087] For example, as shown in Table 2 below, a current with a phase of 0 (or 360) degrees (°) is provided to device 225; a current with a phase of 36° is provided to device 224; a current with a phase of 72° is provided to device 223; a current with a phase of 108° is provided to device 222; a current with a phase of 144° is provided to device 221; a current with a phase of 180° is provided to device 211; a current with a phase of 216° is provided to device 212; a current with a phase of 252° is provided to device 213; a current with a phase of 288° is provided to device 214; and a current with a phase of 324° is provided to device 215. Table 2 also provides the current phases of different conductive coils corresponding to devices 211 to 215 and 221 to 225, and the phases of different resultant forces. The combination of all the resultant forces causes the electroplating solution to: generate counterclockwise motion, which in turn causes the charged reaction reagents therein to: generate counterclockwise motion.

[0088] Table 2

[0089]

[0090] In some embodiments, Fig.19 As shown in the schematic diagram, the vibration modules 20 are disposed on opposite sides of the chamber 11. It should be noted that Fig.19 The figure is only a side view schematic diagram in a certain direction. The vibration module 20 may include Fig.19 Shown: A greater number of devices.

[0091] Reference Fig. 20 , Fig. 201 is a side view diagram of some embodiments according to the present disclosure to illustrate the arrangement of the vibration module 20 facing the side wall 111 of the device 300. The vibration module 20 may include a plurality of devices arranged in an array. In some embodiments, the vibration module 20 includes 9 rows of devices (211-1 to 211-9, 212-1 to 212-9, 213-1 to 213-9, 214-1 to 214-9, or 215-1 to 215-9) arranged along the Y direction on the side wall 111. Fig.19 The devices 211, 212, 213, 214 and 215 shown may be respectively Fig. 20 For ease of explanation, the numbers before the symbol "-" (i.e., 211, 212, 213, 214, and 215) represent devices arranged in different columns along the Z direction, and the numbers after the symbol "-" (i.e., 1, 2, 3, 4, 5, 6, 7, 8, and 9) represent different devices in a row extending along the Y direction. In other words, the vibration module 20 includes 45 devices located on the side wall 111 of the chamber 11.

[0092] The current phase regulator 12 can be applied to Fig. 20 The illustrated embodiment promotes clockwise or counterclockwise motion of the plating solution and the charged reactants therein.

[0093] Reference Fig.21 , Fig.21 is a schematic diagram of the direction of the plating solution vortex drawn according to some embodiments of the present disclosure to illustrate the direction of the resultant force caused by the device. In some embodiments, Fig. 20 Each of the 45 devices in the Fig.19 The current phase adjuster 12 is provided. In some embodiments, each electrical path between the 45 devices and the current phase adjuster 12 can be opened or closed via a corresponding switch. As described above, currents with different phases enter the devices of the vibration module 20 and can provide the plating solution with a desired vortex direction. The current phase adjuster 12 can be adjusted to control the spiral motion of the plating solution.

[0094] In some embodiments, the electrical paths between the devices 211-5, 212-5, 213-5, 214-5 and 215-5 and the current phase adjuster 12 can be closed, and the electrical paths between the devices 211-5, 212-5, 213-5, 214-5 and 215-5 and the current phase adjuster 12 can be closed according to the above concept. Fig.21 Other devices provide currents of different phases. Fig.21 The direction of the resultant force is shown by the arrow in the figure, and when viewed from the direction facing the inner surface 111A of the side wall 111, the combination of these resultant forces causes the plating solution to form vortices in two counterclockwise circles. Fig.21The resultant force shown is for illustration only. The direction or pattern of the resultant force may be adjusted for different applications and designs.

[0095] Based on the above-mentioned inventive concept, the present disclosure further proposes implementation methods of coating equipment and devices as follows:

[0096] Reference Fig. 22 , Fig. 22 4 is a schematic side view of a coating apparatus 400 according to some embodiments of the present disclosure. The coating apparatus 400 may be an electroless coating apparatus, which is similar to the coating apparatus 201, but in the frame of each device 507 or 508, there is no first magnetic field generator.

[0097] The vibration module 20 of the coating device 400 includes a plurality of devices 507 or 508. In some embodiments, the vibration module 20 on the side wall 111 is mirrored or symmetrically arranged relative to the vibration module 20 on the side wall 113. The device 507 or 508 can be similar to the device 500, 501, 502, 503 or 504, but without Figure 2 , 6 , 8, 11 or 13. To provide a magnetic field B1 that laterally crosses the chamber 11 of the coating apparatus 400 along the X direction, one or more magnetic field generators (directions as shown by arrows) 41 or 42 may be attached to the sidewall 111 or 113 of the chamber 11, wherein the sidewall 111 or 113 is at least partially adjacent to the bottom of the frame of the devices 507 and 508.

[0098] In some embodiments, the coating apparatus 400 includes a third magnetic field generator 41 disposed on the sidewall 111 of the chamber 11. In some embodiments, the third magnetic field generator 41 is disposed above the outer surface 111B of the sidewall 111 of the chamber 11 and adjacent to the outer bottom surface of the frame of the device 507. In some embodiments, the third magnetic field generator 41 includes a plurality of magnets 411, 412, 413, 414, and 415. In some embodiments, each of the magnets 411, 412, 413, 414, and 415 is disposed along the Fig. 22aligns with one of the devices 507 in the horizontal direction. In some embodiments, each of the magnets 411, 412, 413, 414, and 415 is fixed to the chamber 11 using silicone. In some embodiments, each of the magnets 411, 412, 413, 414, and 415 is fixed to the chamber 11 using stakes, nails, screws, rivets, other suitable fasteners, or a combination thereof (not shown). The coating apparatus 400 may further include a fourth magnetic field generator 42 disposed on the sidewall 113 of the chamber 11. In some embodiments, the fourth magnetic field generator 42 includes magnets 421, 422, 423, 424, and 425. The arrangement of the magnets 421, 422, 423, 424, and 425 may be similar to the arrangement of the magnets 411, 412, 413, 414, and 415, so it is not repeated.

[0099] In order to provide a magnetic field B1 having a direction from the side wall 111 toward the side wall 113, outside the device 507 or 508: all magnetic field generators 41 and 42 have the same polarity and are oriented in the same direction (for example, the S pole is on the left and the N pole is on the right), so that the magnetic field B1 has a direction from the side wall 111 of the chamber 11 toward the side wall 113, as shown in FIG. Fig. 22 In some other embodiments, outside the device 507 or 508, all magnetic field generators have the same polarity and are oriented in the same direction (e.g., N pole on the left and S pole on the right), so that the magnetic field has a direction from the side wall 113 of the chamber 11 toward the side wall 111 ( Fig. 22 It should be noted that the device 507 and any one of the magnets 411, 412, 413, 414, 415 together form a Figure 4 , and the device 508 and any one of the magnets 421, 422, 423, 424, 425 together form a local magnetic field similar to or substantially the same as shown in Fig.13 In such an arrangement, not only can local magnetic fields B21 and B22 be established at the level of each device, but also a magnetic field B1 can be established laterally across the chamber 11 from a macroscopic perspective.

[0100] The purpose of replacing the first magnetic field generator 52 with the third magnetic field generator 41 and the fourth magnetic field generator 42 is to facilitate maintenance. In addition, the third magnetic field generator 41 and the fourth magnetic field generator 42 are arranged outside the chamber 11, and the advantage is that the strength of the magnetic field B1 can be easily adjusted. As shown above, the spiral motion of the reaction reagent and the film vibration of the vibration module 20 can be affected by the magnetic field B1. For example, the gyration radius of the reaction reagent and the film amplitude of the device 507 or 508 can be adjusted by controlling the strength of the magnetic field B1. Fig. 22The embodiment provides flexibility in performing different deposition operations in the chamber 11 , such as controlling the local magnetic field strength of the magnetic field B1 and the vibration of the flexible membrane 54 .

[0101] As the vibrating module 20 stirs the plating solution, according to the Lorentz force equation (I) described above, the existence of the magnetic field B1 causes the charged (positive or negative) ions / reactants in the plating solution to be subjected to a force F, causing the cations / positive type reactants to generate spiral trajectories and reach the coating surface of the workpiece SB. These spiral trajectories increase the probability of the positive type cations / reactants colliding with the atoms on the surface of the workpiece SB, and finding sites with lower Gibbs free energy for nucleation, thereby improving the growth efficiency and uniformity of the coating.

[0102] The magnetic field generators 41 and 42 may be disposed inside or outside the sidewalls 111 or 113 of the chamber 11. In some embodiments, the magnetic field generators 41 or 42 may be attached to: the outer bottom surface of the frame of the respective device 507 or 508.

[0103] It is noted that the third magnetic field generator 41 or the fourth magnetic field generator 42 may include different numbers of magnets as long as the same purpose as described above can be achieved. In some embodiments, the third magnetic field generator 41 includes a large magnet that overlaps laterally with all devices 507. In addition, the third magnetic field generator 41 or the fourth magnetic field generator 42 may be used as: the first magnetic field generator 52. The purpose of the third magnetic field generator 41 and the fourth magnetic field generator 42 in this case is to: strengthen the magnetic field B1, facilitate the adjustment of the strength of the magnetic field B1, and maintain the magnets 411 to 415 and 421 to 425 from the outside.

[0104] Fig.23 FIG. 4 is a cross-sectional view of a coating apparatus 400: device 507 according to some embodiments of the present disclosure. Device 507 may be similar to device 500, but without Figure 2 As described above, the magnets 411, 412, 413, 414, 415 can be used as the first magnetic field generator 52, which together with the second magnetic field generator 53 form a magnetic field, one end of the magnetic field is perpendicular to the bottom of the frame 51 and adjacent to the magnets 411, 412, 413, 414, 415, and the other end is substantially parallel to the plane of the flexible film 54 and adjacent to the magnets 531 and 533 of the second magnetic field generator 53.

[0105] Reference Fig.24 , Fig.24Schematic diagram of a side view of a coating device 401 according to some embodiments of the present disclosure. Devices 507 and 508 of the vibration module 20, and magnets 411, 412, 413, 414, 415, 421, 422, 423, 424, 425, are substantially the same as Fig. 22 The difference is that the vibration module 20 can be disposed on the inner surfaces 111A and 113A of the side walls 111 and 113, as described above with reference to Fig.16 , and the magnets 411, 412, 413, 414, 415, 421, 422, 423, 424, 425 as the first magnetic field generators are still attached and connected to the outer surfaces 111B and 113B of the chamber 11. Although not illustrated in the present disclosure, it can be understood by those skilled in the art that in some embodiments, the coating apparatus not only includes any device 501, 502, 503, 504, but also includes additional magnetic field generators, such as magnets 411, 412, 413, 414, 415, 421, 422, 423, 424, 425 located outside the device 501, 502, 503, 504 and attached to the coating apparatus, for establishing local magnetic fields B21 and B22, and a macroscopic magnetic field B1 laterally across the coating apparatus: chamber 11.

[0106] Reference Fig.25 , Fig.25 Schematic diagram of a cross-section of a device 507 of a coating apparatus 401 according to some embodiments of the present disclosure. In order to minimize the thickness of the device 507, the Fig.23 The bottom 511 of the middle frame 51. In some embodiments, Fig.25 From the top view shown, the frame 51 of the device 507 is annular in structure. In some embodiments, Fig.25 The annular frame 51 is shown connected or attached to the inner surface 111A of the side wall 111. In some embodiments, the distance d1 between the flexible membrane 54 and the inner surface 111A defines the height of the resonant cavity of the device 507. In some embodiments, a portion of the inner surface 111A is used as the bottom surface 51C of the frame 51. In some embodiments, at least a portion of the inner surface 111A is magnetically conductive.

[0107] Reference Fig.26 , Fig.26is a schematic cross-sectional view of a coating apparatus 410 drawn according to some embodiments of the present disclosure. In some embodiments, a plating solution or chemical for a coating operation is introduced into the chamber 11 through one or more openings in the sidewall of the chamber 11. In some embodiments, one or more liquid chemicals (e.g., a copper-containing solution, a phosphorus-containing solution, sulfuric acid, or other plating solution) are introduced into the chamber 11 through the opening 711. In some embodiments, one or more gaseous chemicals (e.g., phosphine) are injected through the opening 712. In some embodiments, the coating apparatus 410 further includes a conduit 715 extending from the opening 712 to the interior of the chamber 11, wherein the free end of the conduit 715 is designed to be lower than the upper surface 116a of the plating solution 116 during the coating operation. In some embodiments, a plurality of diffusion structures 716 may be disposed adjacent to the free end of the conduit 715 to facilitate diffusion of the gaseous chemical in the coating solution. In some embodiments, the configuration of the diffusion structure 716 may be similar to that of the showerhead.

[0108] During the coating operation, the positive electrode 63 of the coating device 410 may be partially or completely located in the plating solution. The anode 713 may be disposed adjacent to the positive electrode 63. In some embodiments, the anode 713 is connected to the positive electrode 63. During the coating operation, at least a portion of the anode 713 should be located in the plating solution. In some embodiments, the anode 713 is disposed below the positive electrode 63, and the entire anode 713 is located in the plating solution. In some embodiments, the anode 713 is a phosphide copper anode ball (which may include a concentration of phosphorus between about 0.03% and 0.08%). In some embodiments, the anode 713 is a microcrystalline copper anode ball. In some embodiments, the anode 713 is encapsulated or sealed in an anode bag 714. In some embodiments, the anode bag 714 includes Dynel material, polypropylene, or a combination thereof for filtering purposes. In some embodiments, the anode bag 714 is a titanium basket for holding the anode 713. In some embodiments, a portion of the conduit 715 extends below the positive electrode 63 and the anode 713. In some embodiments, the diffusion structure 716 is disposed on a portion of the conduit 715. The negative electrode 64 is disposed in the chamber 11 and is opposite to the positive electrode 63. For example, the positive electrode 63 is disposed near the top (or upper side wall) of the chamber 11 and is separated from the negative electrode 64, wherein the negative electrode 64 is disposed near the bottom (or lower wall) of the chamber 11. In some embodiments, the negative electrode 64 acts as a cathode during the coating operation. During the coating operation, the positive electrode 63 and the negative electrode 64 generate an electric field ( Fig.15 ). The electroplating apparatus 410 may further include a heater 84 disposed in the chamber 11 and adjacent to the bottom of the chamber. In some embodiments, the heater 74 is disposed between the lower wall of the chamber 11 and the negative electrode 64. In some embodiments, during the coating operation, the temperature of the heater 74 is controlled within a range of 50 to 60 degrees Celsius.

[0109] The coating apparatus 410 may further include a support structure 80 for holding a plurality of work pieces SB in the chamber 11. In some embodiments, the support structure 80 includes: one or more beams 81 held or supported by a plurality of columns 82 for holding a plurality of work pieces SB. In some embodiments, each work piece SB is: vertically disposed above the negative electrode 64 between the columns 82. In some embodiments, the work pieces SB are substantially parallel to each other during the coating operation. In some embodiments, each upper clamping structure 83 holds a first peripheral portion of each work piece SB. In some embodiments, the support structure 80 further includes a plurality of lower clamping structures 84. In some embodiments, each lower clamping structure 84 is vertically aligned with each upper clamping structure 83. In some embodiments, each lower clamping structure 84 holds a second peripheral portion opposite to the first peripheral portion of one of the work pieces SB. The support structure 80 can realize the formation of thin films on a plurality of work pieces SB simultaneously through a single coating operation. In some embodiments, the components of the support structure 80 (e.g., the cross beam 81, the column 82, the upper clamping structure 83 and the lower clamping structure 84) can be made of copper or a copper alloy. In some embodiments, the upper clamping structure 83 and the lower clamping structure 84 are coated with a dielectric material, such as plastisol or koroseal. It should be noted that the support structure 80 can be applied to other embodiments as described above (e.g., electroplating apparatus 201, 202, 203, 204, 300, 400 or 401), and the present invention is not limited to the specific embodiments shown in a single figure.

[0110] The coating device 410 may also include a filtration system 73. The purpose of the filtration system 73 is to filter impurities and precipitate metal ions to obtain a better coating effect. In some embodiments, the filtration system 73 includes a conduit 734, a filter 735, and a pump 736. In some embodiments, the conduit 734 provides fluid communication with the chamber through openings 731 and 732. In some embodiments, the filter 735 is arranged across the cross section of the conduit 734 to filter the plating solution flowing therethrough. Under the action of the pump 736, the plating solution is drawn out of the chamber 11 through the opening 731 and flows into the conduit 734, flows through the filter 735, and then returns to the chamber 11 through the opening 732. In some embodiments, the pump 736 can filter the entire plating solution one to three times per hour. In some embodiments, the membrane pore size of the filter 735 can be 1.3 microns or 5 microns.

[0111] In some embodiments, the coating apparatus 410 may further include an exhaust conduit 751 connected to a local scrubber 752 for exhausting gaseous compounds generated during the coating operation, such as hydrogen, chlorine, fluorine, or other gases. The local scrubber 752 may be a hot scrubber, a wet scrubber, a hot-wet scrubber, a combustion scrubber, a dry scrubber, a catalyst scrubber, or a plasma scrubber. Any suitable type of scrubber may be used, without limitation.

[0112] As described above, the coating device 410 should include: at least one magnetic field generator 41 or 42 located on the side wall (or multiple side walls) of the chamber 11, as previously described in Fig. 22 As shown in Fig.26 In some embodiments shown, the magnetic field generator 41 or 42 provides a magnetic field B1 inwardly, toward the paper (i.e., in a direction away from the observer, or in a direction into the paper surface). Therefore, multiple thin films can be formed on multiple workpieces SB respectively, and the conformality and efficiency of the coating operation can be improved by the combination of the electric field and the magnetic field B1.

[0113] Therefore, the present disclosure provides a device for assisting in stirring a liquid or solution in a chamber, and an apparatus including the device. It should be noted that the above embodiments and descriptions focus on deposition operations and deposition apparatuses as illustrative descriptions to facilitate understanding. However, the concepts and apparatus of the present invention can be applied to other types of equipment, such as wafer cleaning equipment in the semiconductor manufacturing industry, or general household applications such as dishwashers or washing machines to assist or promote agitation of water or solutions. The present invention is not limited to the embodiments described in the present disclosure.

[0114] Some embodiments of the present disclosure provide a device for assisting liquid stirring. The device comprises a frame having a bottom and a side wall forming an angle with the bottom surface; a first flexible film attached to the frame by a peripheral portion of the first flexible film; a first magnetic field generator located on the side wall of the frame and adjacent to the peripheral portion of the first flexible film; and a second magnetic field generator adjacent to the bottom of the frame, wherein the first magnetic field generator and the second magnetic field generator are used to provide a magnetic field parallel to at least a portion of the first flexible film, and wherein the first flexible film is in contact with a solution for liquid deposition.

[0115] Some embodiments of the present disclosure: A device for liquid phase thin film deposition is proposed. The device includes a chamber and a vibration module. The chamber is used to accommodate a solution for liquid phase deposition; and the vibration module is adjacent to the side wall of the chamber and in contact with the solution for liquid phase deposition. The vibration module includes: a frame having a bottom and a side wall forming an angle with the bottom surface; a first flexible membrane, attached to the above-mentioned frame by the peripheral portion of the first flexible membrane; and a first magnetic field generator, located on the side wall of the frame and adjacent to the peripheral portion of the first flexible membrane. The device further includes a second magnetic field generator, adjacent to the side wall of the chamber, wherein the first magnetic field generator and the second magnetic field generator are used to provide a magnetic field parallel to at least a portion of the first flexible membrane.

[0116] The features of various embodiments are described above so that those with ordinary knowledge in the art can better understand the aspects of this disclosure. Those with ordinary knowledge in the art can easily use this disclosure as a basis to design or modify other operations and structures to achieve the same purpose as the embodiments described herein, or to achieve the same advantages. Those with ordinary knowledge in the art should understand that these equivalent solutions do not deviate from the spirit and scope of this disclosure, and can be aligned to make various changes, substitutions and modifications without deviating from the spirit and scope of this disclosure.

[0117] Furthermore, the scope of this disclosure is not limited to the specific embodiments of the processes, machines, manufactures, compositions of matter, means, methods, and steps described in the specification. As can be readily understood from this disclosure by those skilled in the art, various existing or later developed processes, machines, manufactures, compositions of matter, means, methods, or steps may be used in accordance with this disclosure, as long as they can perform substantially the same functions as the corresponding embodiments described herein, or can achieve substantially the same results. Therefore, the scope of the attached patent applications covers such processes, machines, manufactures, compositions of matter, devices, methods, and steps.

Claims

1. A device for assisting liquid stirring, comprising: a frame having a bottom and side walls forming an angle with the bottom; a first flexible membrane connected to the frame by a peripheral portion of the first flexible membrane; A first magnetic field generator is located on the side wall of the frame and adjacent to the peripheral portion of the first flexible film; as well as a second magnetic field generator adjacent to the bottom of the frame, wherein the first magnetic field generator and the second magnetic field generator are used to provide a magnetic field parallel to at least a portion of the first flexible membrane at a position adjacent to the side wall, and wherein the first flexible membrane is used to contact the liquid, wherein the device for assisting liquid stirring further comprises a second flexible membrane, the peripheral portion of the second flexible membrane is attached to the frame, and the first flexible membrane is disposed between the second flexible membrane and the bottom of the frame, The device for assisting liquid stirring further comprises: a third magnetic field generator located on the side wall of the frame and adjacent to the peripheral portion of the second flexible film; as well as a fourth magnetic field generator, located between the first flexible film and the second flexible film, The fourth magnetic field generator is connected to the second magnetic field generator via a magnetic conductive material.

2. The device of claim 1, further comprising a first conductive coil connected to the first flexible membrane, wherein the first conductive coil spirally extends outward with a coil axis perpendicular to the bottom of the frame as a center.

3. The device of claim 2, wherein the first conductive coil comprises two terminals for conducting current, and the interaction between the current and the magnetic field parallel to at least a portion of the first flexible membrane causes the first conductive coil and the first flexible membrane to vibrate.

4. The device of claim 3, wherein the electric current is alternating current or direct current.

5. The device of claim 1, wherein the first magnetic field generator comprises a plurality of magnets surrounding the first flexible membrane.

6. The device as claimed in claim 1, wherein at least one of the first magnetic field generator and the second magnetic field generator is a ring magnet. 7 . The device as claimed in claim 1 , wherein the third magnetic field generator and the fourth magnetic field generator are used to provide a magnetic field parallel to at least a portion of the second flexible film.

8. The device of claim 1, wherein the frame is made of a magnetically conductive material.

9. A liquid auxiliary stirring device, comprising: a chamber for containing the liquid; and A plurality of vibration modules are arranged in an array and disposed on the side wall of the chamber and in contact with the liquid, wherein each of the vibration modules comprises: a frame having a bottom and said side walls forming an angle with the bottom; a plurality of first flexible films connected to the frame by peripheral portions of the plurality of first flexible films, wherein the plurality of first flexible films are separated from each other by respective vibration modules; and a first magnetic field generator located on the side wall of the frame and adjacent to the peripheral portion of the plurality of first flexible films; and a second magnetic field generator adjacent to the bottom of the frame, wherein the first magnetic field generator and the second magnetic field generator are used to provide a first magnetic field parallel to at least a portion of the plurality of first flexible films, The device for assisting liquid stirring further comprises a second flexible membrane, the peripheral portion of the second flexible membrane is attached to the frame, and the plurality of first flexible membranes are disposed between the second flexible membrane and the bottom of the frame, The device for assisting liquid stirring further comprises: a third magnetic field generator located on the side wall of the frame and adjacent to the peripheral portion of the second flexible film; and a fourth magnetic field generator, located between the plurality of first flexible films and the second flexible film, The fourth magnetic field generator is connected to the second magnetic field generator via a magnetic conductive material.

10. The apparatus of claim 9, wherein the second magnetic field generator is located at the bottom of the vibration module.

11. The apparatus of claim 9, wherein the second magnetic field generator comprises a plurality of magnets adjacent to the sidewall of the chamber and configured to provide a second magnetic field in the chamber along a horizontal direction.

12. The apparatus of claim 9, further comprising: A pair of electrodes is adjacent to the upper wall and the lower wall of the chamber and is used to provide an electric field in the chamber along a vertical direction.

13. The apparatus of claim 12, wherein the pair of electrodes is in contact with the liquid, and wherein the liquid is a solution for liquid deposition.

14. The apparatus of claim 12, wherein the pair of electrodes comprises a first electrode enclosed in the upper wall of the chamber, and a second electrode enclosed in the lower wall of the chamber.

15. The apparatus of claim 14, wherein the first electrode and the second electrode are enclosed in polytetrafluoroethylene and isolated from the liquid, wherein the liquid is a solution for liquid deposition.

16. The apparatus of claim 9, further comprising a plurality of vibration modules adjacent to the side wall of the chamber and arranged in an array.

17. The device of claim 16, further comprising a current phase adjuster electrically connected to each of the vibration modules and configured to control a current phase entering each of the vibration modules.

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