Preparation method and application of ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst

Abstract

This invention discloses a method for preparing an ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst: Step 1, a certain amount of ZnCl2, InCl3·4H2O and oleylamine are mixed and subjected to a first deoxygenation treatment. A mixed solution of 1-dodecanethiol and tert-dodecylmercaptan is rapidly injected under nitrogen conditions and reacted at a certain temperature for a certain time to obtain ultrathin zinc indium sulfide nanosheets. After centrifugation and washing, the nanosheets are redissolved in a certain amount of n-hexane. Step 2, zincacetate, oleic acid and 1-octadecene are mixed and subjected to a second deoxygenation treatment. The mixture is then heated to a certain temperature under nitrogen conditions, reacted for a certain time, and cooled. A certain amount of the solution obtained in step S1 is rapidly injected and subjected to a third deoxygenation treatment. The mixture is then heated under nitrogen conditions, and a certain amount of a mixed solution of Se and TOP is slowly injected at a certain rate. The mixture is then kept at a certain temperature and reacted for a certain time. After the injection process is completed, the reaction is allowed to continue. Finally, the solution is cooled to room temperature and centrifuged to obtain ZIS / ZnSeHNSs.

Description

Technical Field

[0001] This invention relates to the field of photocatalysts, specifically to a method for preparing and applying an ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst. Background Technology

[0002] Hydrogen, as a sustainable energy source with high energy density, possesses advantages in alleviating the energy crisis and sustaining global population and economic growth. Therefore, it can be considered the best alternative to fossil fuels. Photocatalytic water splitting for hydrogen production cleverly converts renewable solar energy into hydrogen energy through semiconductor photocatalysts, and the entire process emits no pollutants, aligning with the concept of sustainable development. However, the rapid recombination of photogenerated electron-hole pairs in the photocatalytic hydrogen evolution reaction (HER) by a simple photocatalyst leads to low HER conversion efficiency, becoming a serious obstacle to its development. Therefore, the rational design and construction of heterojunction nanocrystals (HNCs) with multifunctional properties to mitigate this unnecessary carrier recombination process and improve photocatalytic efficiency is of paramount importance.

[0003] In recent years, metal polysulfide semiconductor photocatalysts, such as cadmium sulfide (CdS), copper indium sulfide (CuInS2), and zinc indium sulfide (ZnIn2S4, ZIS), have attracted much attention due to their excellent visible light response. Among them, ZIS is a promising layered transition metal sulfide with tunable band structure. Its band gap is typically 2.06–2.85 eV, and its conduction band (CB) position is approximately -1.20 eV, indicating that its photogenerated electrons have strong reducing power, making it suitable for photocatalytic hydrogen desorption from water. Furthermore, its unique layered structure, significant photostability, and environmental friendliness have attracted increasing attention from researchers. However, the severe recombination of photogenerated electron-hole pairs results in unsatisfactory photocatalytic activity of individual ZIS nanosheets (NSs) in HER. To improve its photocatalytic activity, it can be enhanced through elemental doping, morphology control, and the construction of heterojunction structures with efficient charge transfer pathways. Zinc selenide (ZnSe) is a non-toxic nanoparticle (NP) with a suitable band gap (2.8 eV). Its appropriate CB positions can provide sufficient driving force for the decomposition of water into hydrogen. In addition, it is a stable and inexpensive semiconductor with excellent visible light absorption, so it is suitable as a semiconductor cocatalyst.

[0004] Typically, composite photocatalysts formed by growing semiconductor nanoparticles with high band gaps around nanocrystals can effectively improve the chemical stability of colloidal nanomaterials through photoinduced carrier separation. The S-scheme charge transfer mechanism proposed by researchers involves the directional transfer of photogenerated electrons from the conduction band of a low-Fermi level semiconductor to the valence band of a high-Fermi level semiconductor under the influence of an internal electric field. This achieves effective separation of photogenerated electron-hole pairs in the two semiconductors while preserving reaction sites with superior redox properties, thus enhancing photocatalytic activity. Therefore, good photocatalytic activity can be obtained by rationally designing and constructing the S-scheme.

[0005] The above-mentioned methods, which rely solely on elemental doping and morphology control to modulate the band gap of ZIS and thus improve its photocatalytic activity, are highly random and difficult to control. They cannot significantly improve the inherent rapid recombination of photogenerated electron-hole pairs in ZIS, and therefore cannot substantially compensate for its inherent defects. Consequently, they cannot significantly improve its photocatalytic activity and conversion rate.

[0006] Furthermore, ZIS exhibits poor photocatalytic hydrogen evolution activity due to the rapid recombination of photogenerated electron-hole pairs. Materials prepared through elemental doping and morphology manipulation exhibit excessive randomness and are difficult to control. Summary of the Invention

[0007] This invention is made to solve the above-mentioned problems, and aims to provide a method for preparing and applying an ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst.

[0008] This invention provides a method for preparing an ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst, characterized by the following steps: Step 1, mixing a certain amount of zinc chloride, indium trichloride tetrahydrate, and oleylamine and performing a first deoxygenation treatment to obtain a first mixed solution; rapidly injecting a mixed solution of 1-dodecyl mercaptan and tert-dodecyl mercaptan into the first mixed solution under nitrogen conditions, and reacting at a first predetermined temperature for a first predetermined time to obtain ultrathin zinc indium sulfide nanosheets; after centrifugation and washing, redissolving the ultrathin zinc indium sulfide nanosheets in a certain amount of n-hexane to obtain a second mixed solution; Step 2, mixing zinc acetate, oleic acid, and 1- Octadene was mixed and subjected to a second deoxygenation treatment. Then, under nitrogen conditions, the mixture was heated to a second predetermined temperature and reacted for a second predetermined time. After cooling, a certain amount of the second mixed solution was rapidly injected and subjected to a third deoxygenation treatment to obtain a third mixed solution. Then, under nitrogen conditions, the mixture was heated to a third predetermined temperature. A certain amount of a mixed solution of selenium powder and tri-n-octylphosphine was slowly injected into the third mixed solution at a certain rate. The third predetermined temperature was then maintained and the reaction was continued for a third predetermined time. After the injection process was completed, the reaction was allowed to continue for a fourth predetermined time. Finally, the solution was cooled to room temperature and centrifuged to obtain indium zinc sulfide / zinc selenide heterojunction nanosheets.

[0009] The preparation method of the ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst provided by the present invention may also have the following characteristics: in step 1, the temperature of the first deoxygenation treatment is 60℃-80℃, the time is 0.5h-1.5h, the first mixed solution is heated to 200℃-250℃ under nitrogen conditions, and the amount of the mixed solution of 1-dodecathiol and tert-dodecathiol is 5mL-10mL, with a volume ratio of 1-dodecathiol: tert-dodecathiol = 1:10.

[0010] The preparation method of the ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst provided by the present invention may also have the following characteristics: in step 1, the first predetermined temperature is 230℃-250℃, the first predetermined time is 5min-15min, and the amount of n-hexane used is 4mL-6mL.

[0011] The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst provided by the present invention may also have the following characteristics: in step 2, the temperature of the second deoxygenation treatment is 100℃-200℃, the time is 20min-40min, the second predetermined temperature is 240℃-260℃, and the second predetermined time is 0.5h-1.5h.

[0012] The preparation method of the ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst provided by the present invention may also have the following characteristics: in step 2, the injection volume of the second mixed solution is 0.5 mL-2 mL, the temperature of the third deoxygenation treatment is 60℃-80℃, the time is 20 min-40 min, and the third predetermined temperature is 240℃-260℃.

[0013] The preparation method of the ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst provided by the present invention may also have the following characteristics: in step 2, the amount of selenium powder is 0.5 mmol-1 mmol, the amount of tri-n-octylphosphine is 1 mL-3 mL, and the injection rate of the mixed solution of selenium powder and tri-n-octylphosphine is 0.05 mL / min-0.2 mL / min.

[0014] The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst provided by the present invention may also have the following characteristics: in step 2, the third predetermined time is 10 min-30 min, and the fourth predetermined time is 30 min-50 min.

[0015] The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst provided by the present invention may also have the following feature: wherein the indium zinc sulfide / zinc selenide heterojunction nanosheets are sunflower-shaped.

[0016] This invention provides an ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst, characterized in that: the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst is prepared by the preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst of this invention.

[0017] This invention provides an application of an ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst in photocatalytic hydrogen production, characterized in that: the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst is prepared by the preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst of this invention.

[0018] The role and effect of invention

[0019] According to the preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst of the present invention, the specific process is as follows: Step 1, a certain amount of zinc chloride, indium trichloride tetrahydrate and oleylamine are mixed and subjected to a first deoxygenation treatment to obtain a first mixed solution. Under nitrogen conditions, a mixed solution of 1-dodecyl mercaptan and tert-dodecyl mercaptan is rapidly injected into the first mixed solution, and the reaction is carried out at a first predetermined temperature for a first predetermined time to obtain ultrathin indium zinc sulfide nanosheets. After centrifugation and washing, the ultrathin indium zinc sulfide nanosheets are redissolved in a certain amount of n-hexane to obtain a second mixed solution; Step 2, zinc acetate, oleic acid and 1-octadecene are mixed... The mixture is mixed and subjected to a second deoxygenation treatment. Then, under nitrogen conditions, it is heated to a second predetermined temperature and reacted for a second predetermined time before cooling. A certain amount of the second mixed solution is rapidly injected and subjected to a third deoxygenation treatment to obtain a third mixed solution. Then, under nitrogen conditions, it is heated to a third predetermined temperature. A certain amount of the mixed solution of selenium powder and tri-n-octylphosphine is slowly injected into the third mixed solution at a certain rate. Then, the third predetermined temperature is maintained and the reaction is continued for a third predetermined time. After the injection process is completed, the reaction is allowed to continue for a fourth predetermined time. Finally, the solution is cooled to room temperature and centrifuged to obtain indium zinc sulfide / zinc selenide heterojunction nanosheets.

[0020] Therefore, the method for synthesizing composite multi-component heterojunction photocatalyst materials by colloidal chemistry in this invention improves the photocatalytic activity of ZIS by constructing heterojunction nanocrystals by loading ZnSe nanoparticles on ultrathin ZIS nanosheets. By testing the hydrogen production rate of the photocatalyst, it is proposed that the S-scheme (S-type charge transfer mechanism) formed between ZIS and ZnSe greatly improves the carrier separation efficiency compared with pure ZIS nanosheets. The constructed ultrathin ZIS / ZnSe heterojunction nanosheets (HNSs) have higher photocatalytic activity and stability. Attached Figure Description

[0021] Figure 1 This is a schematic diagram illustrating the preparation of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst material in an embodiment of the present invention;

[0022] Figure 2 These are TEM images of the synthesized materials in embodiments of the present invention, wherein... Figure 2 (a) is a TEM image of the synthesized material ZnIn2S4NSs; Figure 2 (b) is a TEM image of the synthesized material ZIS / ZnSeHNSs;

[0023] Figure 3 This is a graph showing the hydrogen production rate of the photocatalyst in an embodiment of the present invention;

[0024] Figure 4 This is a cyclic hydrogen production activity diagram of ZIS / ZnSeHNSs in an embodiment of the present invention. Detailed Implementation

[0025] To make the technical means, creative features, objectives and effects of this invention easy to understand, the following embodiments, in conjunction with the accompanying drawings, specifically illustrate the preparation method and application of an ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst of this invention.

[0026] <Example 1>

[0027] In this embodiment, a method for preparing an ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst is provided.

[0028] The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst involved in this embodiment includes the following steps:

[0029] In step S1, 1 mmol of zinc chloride (ZnCl2), 2 mmol of indium trichloride tetrahydrate (InCl3·4H2O) and 20 mL of oleylamine were added to a 50 mL three-necked flask. The solution was first deoxygenated at 70 °C for 40 min, then heated to 120 °C for another 20 min of deoxygenation, and then heated to 180 °C under nitrogen. Subsequently, 7.5 mL (volume ratio 1:10) of a mixture of 1-dodecanethiol and tert-dodecylmercaptan was rapidly injected into the above solution. The solution was then heated to 240 °C and reacted for 10 min. Finally, the synthesized ultrathin ZnIn2S4 nanosheets were centrifuged, washed, and redissolved in 5 mL of n-hexane.

[0030] In step S2, 1.8 mmol of zinc acetate, 2 mL of oleic acid, and 6 mL of 1-octadecene were added to a 50 mL three-necked flask. The mixture was first deoxygenated at 150 °C for 30 minutes, then heated to 250 °C under nitrogen and reacted for 1 hour. After cooling to 70 °C, 1 mL of the prepared ZISNSs in n-hexane was rapidly injected. After deoxygenation at 70 °C for 30 minutes, the temperature was raised to 250 °C under nitrogen. Then, a mixed solution of 0.9 mmol of selenium powder (Se) and 2 mL of trioctylphosphine (TOP) was slowly injected into the solution at a rate of 0.1 mL / min. The temperature was maintained for approximately 20 minutes. After the injection process, the reaction was allowed to continue for 40 minutes. Finally, the solution was cooled to room temperature, and after centrifugation and washing, zinc indium sulfide / zinc selenide (ZIS / ZnSeHNSs) heterojunction nanosheets were obtained.

[0031] Figure 1This is a schematic diagram illustrating the preparation of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst material in this embodiment.

[0032] like Figure 1 As shown, ultrathin ZnIn2S4 nanosheets were first synthesized by colloidal chemistry, and then ZnSe nanoparticles were loaded onto ZIS by thermal injection to prepare a multi-component heterojunction nanocrystalline photocatalyst ZIS / ZnSeHNSs.

[0033] Figure 2 These are TEM images of the synthesized materials in embodiments of the present invention, wherein... Figure 2 (a) is a TEM image of the synthesized material ZnIn2S4NSs; Figure 2 (b) is a TEM image of the synthesized material ZIS / ZnSeHNSs.

[0034] Figure 3 This is a graph showing the hydrogen production rate of the photocatalyst in this embodiment.

[0035] like Figure 3 As shown, the optimal ratio of ZIS / ZnSeHNSs (with 0.9 mmol of selenium powder and 1.8 mmol of zinc acetate) resulted in a 6.34-fold increase in hydrogen production rate compared to pure ZISNSs. Therefore, the S-scheme formed by ZIS and ZnSe facilitates the separation of photogenerated electron-hole pairs, effectively improving the photocatalytic hydrogen production activity.

[0036] Figure 4 This is a cyclic hydrogen production activity diagram of ZIS / ZnSeHNSs in this embodiment.

[0037] like Figure 4 As shown, after three photocatalytic hydrogen production cycles, the ZIS / ZnSeHNSs photocatalyst still retains approximately 94% of its original catalytic activity, indicating that the material has good stability in photocatalytic hydrogen production cycles.

[0038] This embodiment demonstrates that the S-scheme formed by ZIS and ZnSe effectively improves the defect of rapid recombination of photogenerated electron-hole pairs in pure ZIS. Furthermore, by comparing the hydrogen evolution activity of different supported semiconductor cocatalysts, it is proposed that the S-scheme formed by ZIS and ZnSe promotes efficient carrier separation compared to pure ZIS nanosheets. The constructed ultrathin ZIS / ZnSeHNSs exhibit higher photocatalytic activity and stability. These characteristics result in the prepared composite photocatalyst exhibiting superior photocatalytic hydrogen evolution performance compared to pure ZIS.

[0039] This embodiment can improve the poor electron-hole pair separation effect of pure ZIS, realize hydrogen production of composite photocatalyst under visible light, and maintain good cyclic hydrogen production activity.

[0040] The method described in this embodiment for synthesizing ultrathin composite heterojunction nanocrystalline materials via colloidal chemistry produces a composite photocatalyst suitable for hydrogen production from water splitting under visible light. Furthermore, the loading of ZnSe enhances the relatively low hydrogen production rate of pure ZIS. Hydrogen production rate testing demonstrates that the S-scheme formed between ZIS and ZnSe promotes more efficient carrier separation compared to pure ZIS nanosheets. This composite photocatalyst is environmentally friendly, uses readily available raw materials, and has a simple preparation process, making it highly valuable for applications and potentially providing further direction for research on other multi-component heterojunction structures.

[0041] <Example 2>

[0042] In this embodiment, a method for preparing an ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst is provided. The specific steps are basically the same as those in Example 1, except that in step S2, the amount of zinc acetate and selenium powder added is 1.2 mmol and 0.6 mmol, respectively.

[0043] <Example 3>

[0044] In this embodiment, a method for preparing an ultrathin zinc indium sulfide / zinc selenide heterojunction photocatalyst is provided. The specific steps are basically the same as those in Example 1, except that in step S2, the amount of zinc acetate and selenium powder added is 2.4 mmol and 1.2 mmol, respectively.

[0045] The role and effect of the embodiments

[0046] According to the preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst involved in this embodiment, the specific process is as follows: Step 1, a certain amount of zinc chloride, indium trichloride tetrahydrate and oleylamine are mixed and subjected to a first deoxygenation treatment to obtain a first mixed solution. Under nitrogen conditions, a mixed solution of 1-dodecyl mercaptan and tert-dodecyl mercaptan is rapidly injected into the first mixed solution, and the reaction is carried out at a first predetermined temperature for a first predetermined time to obtain ultrathin indium zinc sulfide nanosheets. After centrifugation and washing, the ultrathin indium zinc sulfide nanosheets are redissolved in a certain amount of n-hexane to obtain a second mixed solution; Step 2, zinc acetate, oleic acid and 1-octadecene are mixed... The mixture is mixed and subjected to a second deoxygenation treatment. Then, under nitrogen conditions, it is heated to a second predetermined temperature and reacted for a second predetermined time before cooling. A certain amount of the second mixed solution is rapidly injected and subjected to a third deoxygenation treatment to obtain a third mixed solution. Then, under nitrogen conditions, it is heated to a third predetermined temperature. A certain amount of the mixed solution of selenium powder and tri-n-octylphosphine is slowly injected into the third mixed solution at a certain rate. Then, the third predetermined temperature is maintained and the reaction is continued for a third predetermined time. After the injection process is completed, the reaction is allowed to continue for a fourth predetermined time. Finally, the solution is cooled to room temperature and centrifuged to obtain indium zinc sulfide / zinc selenide heterojunction nanosheets.

[0047] Therefore, the method for synthesizing composite multi-component heterojunction photocatalyst materials by colloidal chemistry in the above embodiments improves the photocatalytic activity of ZIS by constructing heterojunction nanocrystals by loading ZnSe nanoparticles on ultrathin ZIS nanosheets. By testing the hydrogen production rate of the photocatalyst, it is proposed that the S-scheme (S-type charge transfer mechanism) formed between ZIS and ZnSe greatly improves the carrier separation efficiency compared with pure ZIS nanosheets. The constructed ultrathin ZIS / ZnSe heterojunction nanosheets (HNSs) have higher photocatalytic activity and stability.

[0048] The above embodiments are preferred embodiments of the present invention and are not intended to limit the scope of protection of the present invention.

Claims

1. A method for preparing an ultrathin sulfur-indium-zinc / zinc selenide heterojunction photocatalyst, characterized in that, Includes the following steps: Step 1: A certain amount of zinc chloride, indium trichloride tetrahydrate, and oleylamine are mixed and subjected to a first deoxygenation treatment to obtain a first mixed solution. Under nitrogen conditions, a mixed solution of 1-dodecyl mercaptan and tert-dodecyl mercaptan is rapidly injected into the first mixed solution, and the reaction is carried out at a first predetermined temperature for a first predetermined time to obtain ultrathin zinc indium sulfide nanosheets. After centrifugation and washing, the ultrathin zinc indium sulfide nanosheets are redissolved in a certain amount of n-hexane to obtain a second mixed solution. Step 2: Zinc acetate, oleic acid, and 1-octadecene are mixed and subjected to a second deoxygenation treatment. Then, under nitrogen conditions, the mixture is heated to a second predetermined temperature and reacted for a second predetermined time. After cooling, a certain amount of the second mixed solution is rapidly injected and subjected to a third deoxygenation treatment to obtain a third mixed solution. Then, under nitrogen conditions, the mixture is heated to a third predetermined temperature. A certain amount of a mixed solution of selenium powder and tri-n-octylphosphine is slowly injected into the third mixed solution at a certain rate. The third predetermined temperature is then maintained and the reaction is continued for a third predetermined time. After the injection process is completed, the reaction is allowed to continue for a fourth predetermined time. Finally, the solution is cooled to room temperature and centrifuged to obtain the indium zinc sulfide / zinc selenide heterojunction nanosheets.

2. The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst according to claim 1, characterized in that: wherein In step 1, the temperature of the first deoxygenation treatment is 60℃-80℃, and the time is 0.5h-1.5h. The first mixed solution was heated to 200℃-250℃ under nitrogen atmosphere. The volume of the mixed solution of 1-dodecathiol and tert-dodecathiol is 5 mL to 10 mL, and the volume ratio is 1-dodecathiol: tert-dodecathiol = 1:

10.

3. The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst according to claim 1, characterized in that: wherein In step 1, the first predetermined temperature is 230℃-250℃. The first predetermined time is 5 min-15 min. The amount of n-hexane used is 4 mL to 6 mL.

4. The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst according to claim 1, characterized in that: wherein In step 2, the temperature of the second deoxygenation treatment is 100℃-200℃, and the time is 20min-40min. The second predetermined temperature is 240℃-260℃. The second scheduled time is 0.5h-1.5h.

5. The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst according to claim 1, characterized in that: wherein In step 2, the injection volume of the second mixed solution is 0.5 mL to 2 mL. The third deoxygenation treatment is performed at a temperature of 60℃-80℃ for 20-40 minutes. The third predetermined temperature is 240℃-260℃.

6. The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst according to claim 1, characterized in that: wherein In step 2, the amount of selenium powder used is 0.5 mmol-1 mmol, and the amount of tri-n-octylphosphine used is 1 mL-3 mL. The injection rate of the mixed solution of selenium powder and tri-n-octylphosphine is 0.05 mL / min to 0.2 mL / min.

7. The preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst according to claim 1, characterized in that: wherein, In step 2, the third predetermined time is 10-30 minutes. The fourth predetermined time is 30-50 minutes.

8. The method for preparing the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst according to claim 1, characterized in that: wherein, The indium sulfide / zinc selenide heterojunction nanosheets are sunflower-shaped.

9. An ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst, characterized in that: The ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst is prepared by the preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst according to any one of claims 1-8.

10. The application of an ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst in photocatalytic hydrogen production, characterized in that: The ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst is prepared by the preparation method of the ultrathin indium zinc sulfide / zinc selenide heterojunction photocatalyst according to any one of claims 1-8.

Images