Research method for spiral migration of thyristor-based micro-nano spherical cavity in alternating electric field

Abstract

The present invention relates to a research method for spiral migration of thyristor-based micro-nano spherical cavities under an alternating electric field, comprising: processing the interior of a silicon substrate using a laser processing method; applying a thermal field, a constant electric field, and an alternating electric field to the silicon substrate, setting different temperatures, electric field strengths, and directions, to establish mathematical models for the microcavity to be morphologically stable and undergo spatial spiral migration under the action of the thermal field and the constant electric field, and mathematical models for the microcavity to be morphologically stable and undergo spatial spiral migration under the action of the thermal field and the alternating electric field; and simulating the above mathematical models in COMSOL software. The present invention can achieve stable directional migration of the silicon-based micro-nano spherical cavity shape by applying a thermal field and a uniform electric field, can achieve three-dimensional movement of the silicon-based micro-nano spherical cavity, can achieve and control the three-dimensional movement of the cavity by applying an alternating electric field, and can effectively obtain micro-nano devices with higher quality and better performance.

Description

Technical Field

[0001] The invention belongs to the technical field of micron structure manufacturing, and particularly relates to a research method for spiral migration of a thyristor-based micro-nano spherical cavity in an alternating electric field. Background Art

[0002] Silicon-based micro-nano spherical cavities exhibit unique properties in optics, biology, and other fields. For example, the application of silicon-based micro-nano spherical cavity photonic crystals in optical sensors has effectively improved the sensing performance of micro-nano devices and has extremely high application value. By combining micro-nano structures with information such as optoelectronics and biochemistry, the performance of micro-nano sensors can be achieved and improved, which has a broader application prospect. However, the current common methods for processing silicon-based micro-nano spherical cavities are usually affected by problems such as processing depth, lattice defects of the material itself, and internal stress, resulting in the quality and performance of the device being unable to reach a good state. Therefore, the introduction of alternating electric fields and thermal fields to achieve multi-dimensional regulation of silicon-based micro-nano spherical cavities also provides a new idea and method for obtaining micro-nano devices with higher quality and performance.

[0003] In recent years, research on the use of electric fields to achieve micro- and nano-spherical cavity migration has received considerable attention. Research groups at home and abroad have investigated how specific electric field intensities can induce pore migration in metals and control pore morphology, demonstrating that specific electric fields can induce pore migration within materials. Other research groups have established two-dimensional mathematical models of cavity migration related to temperature gradients and elastic stresses, exploring the relationship between cavity migration speed, elastic stress, and temperature gradients. Still others have demonstrated the important role of surface tension and electron wind in driving cavity formation. Surface tension is temperature-dependent, and the relationship between surface tension and electron wind at different temperatures affects cavity shape and migration.

[0004] Therefore, the use of alternating electric fields to achieve multi-dimensional movement of the spherical cavity to reach a specific position, the ability of the spherical cavity to achieve spiral motion in silicon-based materials and to regulate it has important academic value and theoretical research significance. Summary of the Invention

[0005] This invention provides a method for effectively controlling the spiral migration of silicon-based micro-nano spherical cavities under the influence of an alternating electric field. Based on a temperature field, this method introduces an alternating electric field and modulates parameters such as its intensity, magnitude, frequency, and duration to achieve control over the multi-dimensional spiral motion of the spherical cavity within the silicon-based material. This invention also aims to break through the current limitations of spherical cavities, which can only migrate along a line or plane, by enabling the spherical cavity to maintain its shape and perform three-dimensional spiral motion within the silicon-based material, thereby achieving micro-nano devices with higher quality and performance.

[0006] To achieve the above-mentioned purpose, the present invention is implemented through the following technical solutions:

[0007] The research method of spiral migration of thyristor-based micro-nano spherical cavity under alternating electric field includes the following steps:

[0008] S1. Processing the interior of the silicon substrate using a laser processing method to form a micro-nano spherical cavity on the silicon substrate;

[0009] S2. Applying a thermal field, a constant electric field, and an alternating electric field to the silicon substrate treated in step S1, setting different temperatures and electric field strengths and directions, establishing mathematical models for the stable morphology of the micro-nano spherical cavity and the occurrence of spatial spiral migration under the action of the thermal field and the constant electric field, and establishing mathematical models for the stable morphology of the micro-nano spherical cavity and the occurrence of spatial spiral migration under the action of the thermal field and the alternating electric field, analyzing the distribution of atoms around the silicon-based micro-nano spherical cavity, and exploring the energy exchange between atoms and electrons on the surface of the spherical cavity, thereby obtaining the trajectory of the spatial spiral migration of the thyristor-based micro-nano spherical cavity under the alternating electric field;

[0010] S3. The mathematical models of the micro-nano spherical cavity with stable morphology and spatial spiral migration under the action of thermal field and constant electric field, and the mathematical models of the micro-nano spherical cavity with stable morphology and spatial spiral migration under the action of thermal field and alternating electric field are simulated in COMSOL software respectively.

[0011] As a preferred solution, the target parameter β of the micro-nano spherical cavity morphology stability is c :

[0012]

[0013] Among them, r is the radius of the micro-nano spherical cavity, Z * is the effective charge number of silicon-based materials, e is the charge of electrons, V c is the applied voltage, Ω a is the volume of the atom, γ s is the surface energy.

[0014] As a preferred solution, the mathematical model of the microcavity morphology being stable and spatial spiral migration occurring under the action of the thermal field and the constant electric field is: That is, the sum of the diffusion flux of atoms caused by the electric field and the diffusion flux of atoms caused by the thermal field;

[0015]

[0016]

[0017] Where N is the atomic density, ρ is the resistivity, D0 is the self-diffusion coefficient of the silicon-based material, K is the Boltzmann constant, T is the absolute temperature, and E A is the activation energy of silicon-based materials, Q * is the Mohr heat flow, is the current density of the electric field, and grad is the grad function.

[0018] As a preferred solution, after applying an alternating electric field, the speed of the silicon-based micro-nano spherical cavity during the spatial spiral migration is defined as v. The time t is divided into n equal parts, and the speed of the spherical cavity per unit time τ = t / n is integrated to finally obtain the speed of the time period t;

[0019] The speed of spatial spiral migration of silicon-based micro-nano spherical cavity is:

[0020] v=v1+v2+v3+…+v n

[0021] in, i=1,2,…,n;τ0 is 0;

[0022] D0 is the self-diffusion coefficient of silicon-based materials.

[0023] As a preferred solution, the mathematical model of the micro-nano spherical cavity being stable in shape and undergoing spatial spiral migration under the action of the thermal field and the alternating electric field is:

[0024]

[0025] in,

[0026] And so on;

[0027] And so on;

[0028] Where N is the atomic density, is the current density of the electric field, ρ is the resistivity, D0 is the self-diffusion coefficient of the silicon-based material, K is the Boltzmann constant, T is the absolute temperature, E A is the activation energy of silicon-based materials, Q * is the Mohr heat flow, and grad is the grad function.

[0029] As a preferred solution, the silicon base is an N-type silicon base.

[0030] As a preferred solution, in step S1, a laser with a wavelength of 1.064 μm and a pulse duration of 0.5 ns is selected.

[0031] As a preferred solution, in step S2, the silicon substrate treated in step S1 is placed in a high temperature environment of 800-1000°C for 2-6 hours.

[0032] As a preferred solution, the conditions under the action of thermal field and constant electric field are: placing in a uniform electric field environment with a temperature of 1000-1200° C. and an intensity of 100-300 V for a treatment time of 3-4 hours.

[0033] As a preferred solution, the conditions under the action of thermal field and alternating electric field are:

[0034] The uniform electric field is removed and an alternating electric field is introduced with a frequency of 100-300 Hz and an intensity of 100-300 V, and the treatment time is 5-8 hours.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] (1) The present invention can achieve stable directional migration of silicon-based micro-nano spherical cavities by applying a thermal field and a uniform electric field;

[0037] (2) The present invention can realize the three-dimensional motion of the silicon-based micro-nano spherical cavity, and can realize and control the three-dimensional motion of the spherical cavity by applying an alternating electric field;

[0038] (3) This method can effectively obtain micro-nano devices with higher quality and better performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 Schematic diagram of the silicon-based micro-nano spherical cavity device for laser processing of a certain depth according to the present invention;

[0040] Figure 2 This is a schematic diagram of the migration experiment device of the silicon-based micro-nano spherical cavity of the present invention;

[0041] Figure 3 Schematic diagram of silicon-based micro-nano spherical cavity migration under uniform electric field and alternating electric field respectively;

[0042] Figure 4 Schematic diagram of the migration trajectory of the silicon-based micro-nano spherical cavity under the action of an alternating electric field;

[0043] Figure 5 The present invention introduces an alternating electric field to illustrate the distribution of atoms around the silicon-based micro-nano spherical cavity and a schematic diagram of the energy exchange principle between atoms and electrons on the surface of the spherical cavity. DETAILED DESCRIPTION

[0044] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. Those skilled in the art will be able to implement the present invention based on these descriptions. Furthermore, the embodiments of the present invention described below are generally only a portion of the embodiments of the present invention, rather than all of the embodiments. Therefore, all other embodiments derived by those skilled in the art based on the embodiments of the present invention without inventive effort should fall within the scope of protection of the present invention.

[0045] like Figure 1As shown, an experimental device for processing an N-type silicon-based internal spherical cavity using a laser method in an embodiment of the present invention includes a laser 1, a microscope objective 2, a spectrometer 3, a laser reflector 4, an N-type silicon sample 5, and a mobile test platform 6.

[0046] like Figure 2 As shown, the experimental device for the two-dimensional / three-dimensional migration of silicon-based micro-nano spherical cavities under the action of electric and thermal fields includes a computer 7, a confocal microscope 8, an N-type silicon sample 9, a molybdenum plate 10, an adjustable power supply 11, a heating device 12, and a liftable platform 13.

[0047] The research method for realizing effective and controllable spiral motion of a silicon-based micro-nano spherical cavity under an alternating electric field in an embodiment of the present invention includes the following steps:

[0048] S1. Select laser processing method to directly process inside the silicon substrate to produce micro-nano spherical cavity;

[0049] S2. By applying a thermal field, a constant electric field, and an alternating electric field to the silicon substrate, setting different temperatures and electric field strengths and directions, mathematical models are established for the stable morphology of the microcavity and the occurrence of spatial spiral migration under the action of the thermal field and the constant electric field, as well as the stable morphology of the microcavity and the occurrence of spatial spiral migration under the action of the thermal field and the alternating electric field. The distribution of atoms around the silicon-based micro-nano spherical cavity is analyzed, and the energy exchange between atoms and electrons on the surface of the spherical cavity is explored, thereby obtaining the trajectory of the effective spatial spiral migration of the thyristor-based micro-nano spherical cavity under the action of the alternating electric field;

[0050] S3. Simulating the mathematical models of the microcavity morphology being stable and undergoing spatial spiral migration under the action of thermal field and constant electric field, and the mathematical models of the microcavity morphology being stable and undergoing spatial spiral migration under the action of thermal field and alternating electric field in COMSOL software respectively;

[0051] Specifically, the above steps S1 and S2 include the following steps:

[0052] S1.1. Select a laser with a specific wavelength and pulse duration to directly process a spherical cavity inside the silicon substrate.

[0053] S1.2. Add a specific thermal field to the environment described in S1.1 to compensate for the defects generated during the laser processing; then, by adding a uniform electric field with stable direction and intensity, the spherical cavity can migrate along the direction of the electric field under the action of the uniform electric field. After a period of time, the uniform electric field is removed and an alternating electric field of a certain frequency and intensity is introduced. After a period of time, the migration path of the spherical cavity is observed using a specific microscope.

[0054] Existing technology allows microcavities in metals to migrate in a direction opposite to the electric field under the influence of an electric field. The principle behind this is that when a uniform electric field of constant direction and magnitude is applied within a silicon substrate, free electrons are affected by the electric field, causing a large number of electrons to drift, forming an "electron wind" in the opposite direction of the electric field. Under the influence of this electron wind, electrons collide with atoms, transferring some energy to the atoms, driving their motion and exchanging momentum. The electron wind forces the spherical cavity to migrate in the opposite direction of the electric field. The strength of this electron wind is primarily influenced by the number of free electrons in the silicon substrate and the strength of the electric field.

[0055] The migration process is often accompanied by deformation. Although the electric field can cause the microcavity to migrate to a certain position, this deformation directly affects the quality of the silicon-based microcavity, and thus the quality and performance of the micro-nano device. Therefore, the present invention introduces a thermal field and an alternating electric field to maintain shape stability during migration and regulate three-dimensional spiral motion, thus breaking through the current limitations of silicon-based micro-nanocavities, which are limited to single-direction or planar motion.

[0056] In order to keep the shape of the silicon-based micro-nano spherical cavity stable during migration, it is mainly necessary to calculate the thermal field, spherical cavity size and electric field size.

[0057] Applying a thermal field to the migration of silicon-based micro-nanosphere cavities requires molecular dynamics methods to calculate the bulk free energy. This involves studying how the bulk free energy of the silicon substrate changes with temperature and exploring the optimal range for solid-to-gas phase transitions within the cavity. Bulk free energy is a key function in thermodynamics used to determine the direction of material transformation, characterizing the tendency of the same substance to undergo reversible transformations at different temperatures under closed conditions. Assuming the cavity is filled with a saturated gas composed of the same particles as the silicon substrate, the bulk free energy difference Δg represents the difference in bulk free energy per unit atom between the gaseous and solid silicon substrates.

[0058] A change in temperature will cause a change in the bulk free energy Δg.

[0059] If Δg>0, the atoms will tend to transition from the gaseous state to the solid state, causing the cavity to shrink;

[0060] If Δg<0, the atoms will tend to transition from solid to gaseous state, causing the cavity to expand.

[0061] The size of the spherical cavity inside the silicon-based material under the action of the electric field has a great relationship with whether it can migrate stably in shape, that is, there is a ratio between the electron wind force and the surface energy of the spherical cavity, which is defined as the key parameter β for the stability of the spherical cavity shape. c :

[0062]

[0063] β cBy using C language to compile and simulate, we can obtain the relationship between the size of the spherical cavity inside the silicon base and the electric field strength. The simulation results can be used to determine the range of the spherical cavity size, laying the foundation for the smooth progress of the experiment.

[0064] Under the action of a uniform electric field, mass exchange occurs between atoms and electrons on the surface of the spherical cavity to form an electron wind. The temperature gradient will also cause mass exchange. The sum of the atomic diffusion flux caused by the electric field and the atomic diffusion flux caused by the thermal field is expressed as follows:

[0065]

[0066]

[0067] Taking all factors into consideration, the overall expression of spherical cavity migration in this model (i.e., the mathematical model of the stable microcavity morphology and spatial spiral migration under the action of thermal field and constant electric field) is:

[0068] The theoretical speed at which the spherical cavity maintains a stable shape during migration is:

[0069]

[0070] Where N is the atomic density, Z * is the effective charge number of silicon-based materials, e is the charge of electrons; V c is the applied voltage; Ω a is the volume of the atom; r is the radius of the spherical cavity; γ s is the surface energy; is the current density of the electric field, ρ is the resistivity, D0 is the self-diffusion coefficient of the silicon-based material, K is the Boltzmann constant, T is the absolute temperature, E A is the activation energy of silicon-based materials, Q * is the Mohr heat flow. It can be seen that current density is one of the decisive factors for atomic electromigration. The greater the current density, the easier it is for atoms to migrate.

[0071] The above method is used to solve the temperature range in which the silicon-based micro-nano spherical cavity maintains a stable shape under the action of an electric field. An alternating electric field is introduced and realized by alternating voltage. The direction and intensity of the electric field will change periodically over time. During the migration process, the temperature remains unchanged and the volume free energy remains unchanged, so the shape of the silicon-based micro-nano spherical cavity remains stable. The periodic change in the direction of the alternating electric field causes the migration of the spherical cavity to change periodically, and the migration path of the spherical cavity will also change accordingly.

[0072] After applying an alternating electric field, the speed of the silicon-based micro-nano spherical cavity during migration is defined as v. Divide the time t into n equal parts, solve the speed of the spherical cavity per unit time τ = t / n, and integrate it to finally obtain the speed in time period t. The speed of the alternating electric field is:

[0073] v=v1+v2+v3+…+v n

[0074]

[0075] The overall expression of the spherical cavity migration under the alternating electric field (i.e., the mathematical model of the micro-nano spherical cavity morphology being stable and spatial spiral migration occurring under the action of thermal field and alternating electric field) is:

[0076]

[0077] in,

[0078] The above model was compiled and simulated, and a large amount of data was processed to obtain the temperature and alternating electric field intensity range for the silicon-based micro-nano spherical cavity to undergo shape-stable spatial multi-dimensional spiral motion migration.

[0079] As a preferred embodiment, the silicon-based material is extrinsic N-type silicon that is mainly electronically conductive.

[0080] As a preferred embodiment, in the above step S1 , a laser with a wavelength of 1.064 μm and a pulse duration of 0.5 ns is selected to process the interior of the selected N-silicon (300 μm×300 μm) based material, wherein the processing depth is 65 μm.

[0081] As a preferred embodiment, in the above step S2, the processed silicon-based material is placed in a high temperature environment of 800 to 1000° C. for 2 to 6 hours.

[0082] As a preferred embodiment, in the above step S2, the treated silicon-based material is placed in a uniform electric field environment with a temperature of 1000° C. to 1200° C. and an intensity of 100 to 300 V for a treatment time of 3 to 4 hours.

[0083] As a preferred embodiment, the uniform electric field is removed in the above step S2, and the silicon-based micro-nano spherical cavity material processed based on the above step is placed in an alternating electric field environment with a temperature of 1000°C to 1200°C, a frequency of 100 to 300 Hz, and an intensity of 100 to 300 V for 5 to 8 hours.

[0084] As a preferred embodiment, after the silicon-based material is processed through the above steps, the movement path of the spherical cavity and the position of the spherical cavity are observed under a confocal microscope.

[0085] Confocal microscopy is widely used in materials science, providing high-resolution, three-dimensional imaging and real-time observation capabilities. Confocal microscopy can adjust the depth of focus, enabling local three-dimensional observation. In this experimental method, confocal microscopy was well suited to observing the motion paths of silicon-based micro- and nano-spherical cavities.

[0086] Example 1:

[0087] like Figure 3 As shown in the figure, the experimental method and steps for realizing the multi-dimensional spiral motion migration of silicon-based micro-nano spherical cavity under the action of alternating electric field and thermal field are as follows:

[0088] Place the selected N-type silicon on Figure 1 On the mobile test bench in the experiment, the relevant parameters of the laser are adjusted so that the emitted laser wavelength is 1.064μm and the pulse duration is 0.5ns. The angle of the laser reflector and the position of the mobile test bench are adjusted so that the laser can better focus on the sample. A microcavity can be formed at a position of about 65μm inside the N-type silicon, but it may have defects.

[0089] After the microcavity is machined, the sample is carefully moved to Figure 2 In the experimental device, a thermal field was introduced based on the principle of minimum surface energy, and the relevant parameters of the high-temperature heating device were adjusted to keep the silicon-based microcavity in an environment of 1000℃ for 3 hours. Figure 3 As shown, the microcavity with certain defects processed by laser is based on the principle of minimum surface energy and gradually becomes a spherical cavity with a regular shape under the action of the thermal field.

[0090] After high-temperature treatment, the microcavity transformed into a spherical cavity. While maintaining the sample's ambient temperature at 1000°C, the power supply parameters were adjusted to apply a uniform downward electric field of 300V to the silicon sample for 3 hours. Within this environment, a confocal microscope recorded the shape and position of the microcavity every 10 minutes. Real-time confocal microscopy revealed that the spherical cavity migrated along the direction of the electric field.

[0091] like Figure 3 As shown in the figure, under the action of thermal and electric fields, the silicon-based micro-nano spherical cavity can maintain a stable shape and migrate along the direction of the electric field. The schematic diagram of its migration principle is shown in the figure. Figure 4 and Figure 5 As shown in the figure, free electrons under the action of an electric field are affected by the electric force, causing a large number of electrons to drift and form an "electron wind" in the direction opposite to the electric field. Under the influence of the electron wind, electrons collide with atoms, transferring some energy to the atoms, driving their motion and exchanging momentum.

[0092] Based on the above steps, if Figure 3As shown in the figure, the ambient temperature of the silicon-based micro-nano spherical cavity was maintained at a constant 1000°C. The uniform electric field was removed and an alternating electric field with a frequency of 100Hz and an intensity of 200V was introduced for 5 hours. In this environment, a confocal microscope recorded the shape and position of the microcavity every 5 minutes. The real-time recording showed that the silicon-based micro-nano spherical cavity underwent multi-dimensional directional motion (spiral motion), and its migration path was roughly in the direction of a spiral line.

[0093] Example 2:

[0094] like Figure 3 As shown in the figure, the experimental method and steps for realizing the multi-dimensional spiral motion migration of silicon-based micro-nano spherical cavity under the action of alternating electric field and thermal field are as follows:

[0095] Place the selected N-type silicon on Figure 1 On the mobile test bench in the experiment, the relevant parameters of the laser are adjusted so that the emitted laser wavelength is 1.064μm and the pulse duration is 0.5ns. The angle of the laser reflector and the position of the mobile test bench are adjusted so that the laser can better focus on the sample. A microcavity can be formed at a position of about 65μm inside the N-type silicon, but it may have defects.

[0096] After the microcavity is machined, the sample is carefully moved to Figure 2 In the experimental device, a thermal field was introduced based on the principle of minimum surface energy, and the relevant parameters of the high-temperature heating device were adjusted to keep the silicon-based microcavity in an environment of 950°C for 3 hours. Figure 3 As shown, the microcavity with certain defects processed by laser is based on the principle of minimum surface energy and gradually becomes a spherical cavity with a regular shape under the action of the thermal field.

[0097] After high-temperature treatment, the microcavity transformed into a spherical cavity. While the sample's ambient temperature remained at 950°C, a uniform electric field with a downward direction and a strength of 250V was applied to the silicon-based sample under controlled power supply parameters for 3 hours. Within this environment, a confocal microscope recorded the shape and position of the microcavity every 10 minutes. Real-time confocal microscopy revealed that the spherical cavity migrated along the direction of the electric field.

[0098] like Figure 3 As shown in the figure, under the action of thermal and electric fields, the silicon-based micro-nano spherical cavity can maintain a stable shape and migrate along the direction of the electric field. The schematic diagram of its migration principle is shown in the figure. Figure 4 and Figure 5 As shown in the figure, free electrons under the action of an electric field are affected by the electric force, causing a large number of electrons to drift and form an "electron wind" in the direction opposite to the electric field. Under the influence of the electron wind, electrons collide with atoms, transferring some energy to the atoms, driving their motion and exchanging momentum.

[0099] Based on the above steps, if Figure 3 As shown in the figure, the ambient temperature of the silicon-based micro-nano spherical cavity was controlled at 1050°C. The uniform electric field was removed and an alternating electric field with a frequency of 150Hz and an intensity of 250V was introduced for 6 hours. In this environment, a confocal microscope recorded the shape and position of the microcavity every 5 minutes. Real-time recording showed that the silicon-based micro-nano spherical cavity underwent multi-dimensional directional motion (spiral motion), and its migration path was roughly in the direction of a spiral line.

[0100] Example 3:

[0101] like Figure 3 As shown in the figure, the experimental method and steps for realizing the multi-dimensional spiral motion migration of silicon-based micro-nano spherical cavity under the action of alternating electric field and thermal field are as follows:

[0102] Place the selected N-type silicon on Figure 1 On the mobile test bench in the experiment, the relevant parameters of the laser were adjusted so that the emitted laser wavelength was 1.064μm and the pulse duration was 0.5ns. The angle of the laser reflector and the position of the mobile test bench were adjusted so that the laser could better focus on the sample. A microcavity was formed at a position of about 65μm inside the N-type silicon, but it may have defects.

[0103] After the microcavity is machined, the sample is carefully moved to Figure 2 In the experimental device, a thermal field was introduced based on the principle of minimum surface energy, and the relevant parameters of the high-temperature heating device were adjusted to keep the silicon-based microcavity in an environment of 900°C for 5 hours. Figure 3 As shown, the microcavity with certain defects processed by laser is based on the principle of minimum surface energy and gradually becomes a spherical cavity with a regular shape under the action of the thermal field.

[0104] After high-temperature treatment, the microcavity transformed into a spherical cavity. While maintaining the sample's ambient temperature at 900°C, the power supply parameters were adjusted to apply a uniform downward electric field of 200V to the silicon sample for four hours. Within this environment, a confocal microscope recorded the shape and position of the microcavity every 10 minutes. Real-time confocal microscopy revealed that the spherical cavity migrated along the direction of the electric field.

[0105] like Figure 3 As shown in the figure, under the action of thermal and electric fields, the silicon-based micro-nano spherical cavity can maintain a stable shape and migrate along the direction of the electric field. The schematic diagram of its migration principle is shown in the figure. Figure 4 and Figure 5 As shown in the figure, free electrons under the action of an electric field are affected by the electric force, causing a large number of electrons to drift and form an "electron wind" in the direction opposite to the electric field. Under the influence of the electron wind, electrons collide with atoms, transferring some energy to the atoms, driving their motion and exchanging momentum.

[0106] Based on the above steps, if Figure 3 As shown in the figure, the ambient temperature of the silicon-based micro-nano spherical cavity was kept constant at 1100°C. The uniform electric field was removed and an alternating electric field with a frequency of 200Hz and an intensity of 200V was introduced for 7 hours. In this environment, a confocal microscope recorded the shape and position of the microcavity every 5 minutes. Real-time recording revealed that the silicon-based micro-nano spherical cavity underwent multi-dimensional directional motion (spiral motion), and its migration path was roughly in the direction of a spiral line.

[0107] Example 4:

[0108] like Figure 3 As shown in the figure, the experimental method and steps for realizing the multi-dimensional spiral motion migration of silicon-based micro-nano spherical cavity under the action of alternating electric field and thermal field are as follows:

[0109] Place the selected N-type silicon on Figure 1 On the mobile test bench in the experiment, the relevant parameters of the laser are adjusted so that the emitted laser wavelength is 1.064μm and the pulse duration is 0.5ns. The angle of the laser reflector and the position of the mobile test bench are adjusted so that the laser can better focus on the sample. A microcavity can be formed at a position of about 65μm inside the N-type silicon, but it may have defects.

[0110] After the microcavity is machined, the sample is carefully moved to Figure 2 In the experimental device, a thermal field was introduced based on the principle of minimum surface energy, and the relevant parameters of the high-temperature heating device were adjusted to keep the silicon-based microcavity in an environment of 800℃ for 6 hours. Figure 3 As shown, the microcavity with certain defects processed by laser is based on the principle of minimum surface energy and gradually becomes a spherical cavity with a regular shape under the action of the thermal field.

[0111] After high-temperature treatment, the microcavity transformed into a spherical cavity. While maintaining the sample's ambient temperature at 800°C, the power supply parameters were adjusted to apply a uniform downward electric field of 300V to the silicon sample for four hours. Within this environment, a confocal microscope recorded the shape and position of the microcavity every 10 minutes. Real-time confocal microscopy revealed that the spherical cavity migrated along the direction of the electric field.

[0112] like Figure 3 As shown in the figure, under the action of thermal and electric fields, the silicon-based micro-nano spherical cavity can maintain a stable shape and migrate along the direction of the electric field. The schematic diagram of its migration principle is shown in the figure. Figure 4 and Figure 5As shown in the figure, free electrons under the action of an electric field are affected by the electric force, causing a large number of electrons to drift and form an "electron wind" in the direction opposite to the electric field. Under the influence of the electron wind, electrons collide with atoms, transferring some energy to the atoms, driving their motion and exchanging momentum.

[0113] Based on the above steps, if Figure 3 As shown in the figure, the ambient temperature of the silicon-based micro-nano spherical cavity was kept constant at 1200°C. The uniform electric field was removed and an alternating electric field with a frequency of 100Hz and an intensity of 300V was introduced for 8 hours. In this environment, a confocal microscope recorded the shape and position of the microcavity every 5 minutes. Real-time recording revealed that the silicon-based micro-nano spherical cavity underwent multi-dimensional directional motion (spiral motion), and its migration path was roughly in the direction of a spiral line.

[0114] The above description is only a detailed description of the preferred embodiments and principles of the present invention. For ordinary technicians in this field, based on the ideas provided by the present invention, there will be changes in the specific implementation methods, and these changes should also be considered as the scope of protection of the present invention.

Claims

1. A method for studying spiral migration of thyristor-based micro-nano spherical cavities under an alternating electric field, characterized by comprising the following steps: S1. Processing the interior of the silicon substrate using a laser processing method to form a micro-nano spherical cavity on the silicon substrate; S2. Applying a thermal field, a constant electric field, and an alternating electric field to the silicon substrate treated in step S1, setting different temperatures and electric field strengths and directions, establishing mathematical models for the stable morphology of the micro-nano spherical cavity and the occurrence of spatial spiral migration under the action of the thermal field and the constant electric field, and establishing mathematical models for the stable morphology of the micro-nano spherical cavity and the occurrence of spatial spiral migration under the action of the thermal field and the alternating electric field, analyzing the distribution of atoms around the silicon-based micro-nano spherical cavity, and exploring the energy exchange between atoms and electrons on the surface of the spherical cavity, thereby obtaining the trajectory of the spatial spiral migration of the thyristor-based micro-nano spherical cavity under the alternating electric field; S3. Simulating the mathematical models of the micro-nano spherical cavity with stable morphology and spatial spiral migration under the action of thermal field and constant electric field, and the mathematical models of the micro-nano spherical cavity with stable morphology and spatial spiral migration under the action of thermal field and alternating electric field in COMSOL software respectively; The target parameters for the morphological stability of the micro-nano spherical cavity : ； in, is the radius of the micro-nano spherical cavity, is the effective charge number of silicon-based materials, e is the charge of electrons, is the applied voltage, is the volume of the atom, is the surface energy; The mathematical model of the microcavity morphology being stable and spatial spiral migration occurring under the action of the thermal field and the constant electric field is: , that is, the sum of the diffusion flux of atoms caused by the electric field and the diffusion flux of atoms caused by the thermal field; ； ； in, is the atomic density, is the resistivity, is the self-diffusion coefficient of silicon-based materials, is the Boltzmann constant, is the absolute temperature, is the activation energy of silicon-based materials, is the Mohr heat flow, is the current density of the electric field, grad is the grad function; The mathematical model of the micro-nano spherical cavity being stable in shape and undergoing spatial spiral migration under the action of the thermal field and alternating electric field is: ； in, ; ; , And so on; , And so on; in, is the atomic density, is the current density of the electric field, is the resistivity, is the self-diffusion coefficient of silicon-based materials, is the Boltzmann constant, is the absolute temperature, is the activation energy of silicon-based materials, is the Mohr heat flow, and grad is the grad function.

2. The research method according to claim 1, characterized in that After applying an alternating electric field, the speed of the silicon-based micro-nano spherical cavity during spatial spiral migration is defined as , divide the time t into n equal parts, and for unit time Integrate the velocity of the spherical cavity to obtain the velocity of time period t; The speed of spatial spiral migration of silicon-based micro-nano spherical cavity is: ； in, ; i = 1, 2, …, n; is 0; is the self-diffusion coefficient of silicon-based materials.

3. The research method according to any one of claims 1-2, characterized in that: The silicon base is an N-type silicon base.

4. The research method according to any one of claims 1-2, characterized in that In step S1, a laser with a wavelength of 1.064 μm and a pulse duration of 0.5 ns is selected.

5. The research method according to any one of claims 1-2, characterized in that: In step S2, the silicon substrate processed in step S1 is placed in a high temperature environment of 800-1000° C. for 2-6 hours.

6. The research method according to claim 5, characterized in that The conditions under the action of thermal field and constant electric field are: placing in a uniform electric field environment with a temperature of 1000-1200°C and an intensity of 100-300V for a processing time of 3-4 hours.

7. The research method according to claim 6, characterized in that The conditions under the action of thermal field and alternating electric field are: The uniform electric field is removed and an alternating electric field is introduced with a frequency of 100-300 Hz and an intensity of 100-300 V, and the treatment time is 5-8 hours.

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