Mask device and thin film deposition equipment

Abstract

This application relates to the field of display device manufacturing technology, specifically a mask apparatus. The mask body includes a non-deposition region and a perforated deposition region. The non-deposition region corresponds to a non-coating region of a workpiece to be deposited, and the non-deposition region has a first airflow channel communicating with the non-coating region of the workpiece. This application also relates to a thin-film deposition apparatus. By providing a first airflow channel in the non-deposition region, this application ensures that gas flowing between the non-deposition region of the mask body and the non-coating region of the workpiece is discharged through the first airflow channel, thereby preventing gas deposition on the non-coating region of the workpiece and thus avoiding shadowing.

Description

Technical Field

[0001] This application relates to the field of display device manufacturing technology, and in particular to a masking device and a thin film deposition apparatus. Background Technology

[0002] Currently, in the thin film deposition process, a mask body is placed on the workpiece to be deposited. The non-deposition area on the mask body masks the non-coated area of ​​the workpiece, and the deposition area on the mask body allows gas to be deposited onto the coated area of ​​the workpiece. However, due to the high fluidity of the gas, it is easy for the gas to enter from the connection gap between the mask body and the workpiece and deposit on the non-coated area of ​​the workpiece, resulting in a shadowing effect. Summary of the Invention

[0003] At least one embodiment of this application provides a masking device and a thin film deposition apparatus to solve the problem of shadowing effect during thin film deposition in the prior art.

[0004] To address the aforementioned technical problems, at least one embodiment of this application provides a masking device, employing the technical solution described below:

[0005] A masking device includes a mask body;

[0006] The mask body has a non-deposition area and a hollowed-out deposition area;

[0007] The non-deposition area is used to correspond to the non-coating area of ​​the part to be deposited, and the non-deposition area has a first airflow channel, which is used to communicate with the non-coating area of ​​the part to be deposited.

[0008] Furthermore, the mask body includes a deposition partition and a first mask plate and a second mask plate disposed at intervals;

[0009] The deposition baffle is disposed between the non-deposition area and the deposition area;

[0010] Both the first mask and the second mask are disposed in the non-deposition area, and the deposition partition is also disposed between the first mask and the second mask; the first airflow channel is formed by the first mask, the second mask, and the deposition partition.

[0011] The second mask plate has a channel communicating with the first airflow channel. The channel is used to connect the first airflow channel and the non-coating area of ​​the part to be deposited.

[0012] Furthermore, the channel is located at one end of the second mask plate near the deposition area; or,

[0013] The channel is located in the middle of the second mask plate.

[0014] Furthermore, the masking device also includes a support member;

[0015] The support member is disposed in the first airflow channel, and both ends of the support member abut against the first mask plate and the second mask plate, respectively.

[0016] Furthermore, the number of the support members is one, and the longitudinal cross-sectional area of ​​the support member is smaller than the longitudinal cross-sectional area of ​​the first airflow channel; or,

[0017] The number of the support members is at least two, and the two adjacent support members are spaced apart.

[0018] Furthermore, the number of the support members is at least two, and the spacing between two adjacent support members is 1 mm to 9 mm.

[0019] Furthermore, the longitudinal height of the support member is 50 micrometers to 200 micrometers.

[0020] Furthermore, the masking device also includes a mask frame;

[0021] Both the first mask plate and the second mask plate are connected to the mask frame, and the mask frame has at least one second airflow channel communicating with the first airflow channel.

[0022] Furthermore, the second airflow channel is a longitudinal channel; or,

[0023] The second airflow channel is a guide channel, which is used to guide the gas in the first airflow channel into the guide channel.

[0024] To address the aforementioned technical problems, at least one embodiment of this application also provides a thin film deposition apparatus, which employs the technical solution described below:

[0025] A thin film deposition apparatus, comprising:

[0026] Deposition chamber;

[0027] A stage, which is disposed in the deposition chamber and is used to support the part to be deposited;

[0028] The masking device described above is disposed on the stage and is used to mask the part to be deposited on the stage;

[0029] A pressure regulating device, the output end of which is connected to the first airflow channel to regulate the air pressure in the first airflow channel.

[0030] Furthermore, the thin film deposition apparatus also includes a position adjustment device;

[0031] The position adjustment device includes a position guide and a drive component;

[0032] One end of the position guide is connected to the mask body;

[0033] The output end of the drive unit is connected to the other end of the position guide, and is used to adjust the position of the mask body through the position guide.

[0034] Furthermore, the position guide is provided with a third airflow channel, one end of which is connected to the first airflow channel;

[0035] The output end of the air pressure regulating device is connected to the other end of the third airflow channel, so as to regulate the air pressure in the first airflow channel through the third airflow channel.

[0036] Compared with the prior art, the embodiments of this application have the following advantages: In the reactive gas deposition process of thin film deposition, by setting a first airflow channel in the non-deposition area, the gas flowing into the non-deposition area of ​​the mask body and the non-coating area of ​​the workpiece to be deposited will be discharged from the first airflow channel, thereby preventing the gas from being deposited on the non-coating area of ​​the workpiece to be deposited, and thus avoiding the generation of shadow phenomenon. Attached Figure Description

[0037] To more clearly illustrate the solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0038] Figure 1 This is a schematic diagram of the mask device according to Embodiment 1 of this application;

[0039] Figure 2 This is a schematic diagram of the structure of the first airflow channel and the support member in the mask device of Embodiment 1 of this application;

[0040] Figure 3 This is a schematic diagram of the mask device and the part to be deposited according to Embodiment 1 of this application;

[0041] Figure 4 This is a schematic diagram of the thin film deposition apparatus according to Embodiment 2 of this application.

[0042] Figure label:

[0043] 100. Mask body; 110. Non-deposition area; 120. Deposition area; 130. First airflow channel; 140. Contact area; 150. Deposition partition; 160. First mask plate; 170. Second mask plate; 171. Channel; 180. Support; 190. Mask frame; 191. Second airflow channel; 192. Fixing groove; 300. Stage; 400. Pressure regulating device; 410. Vacuum pump; 420. Positive pressure chamber; 430. Negative pressure chamber; 440. Positive pressure valve; 450. Negative pressure valve; 500. Position adjusting device; 510. Position guide; 511. Third airflow channel; 600. Part to be deposited; 610. Non-coating area; 620. Coating area. Detailed Implementation

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0045] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0046] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0047] To facilitate understanding, the terminology mentioned in the specific implementation methods will be explained below:

[0048] (1) Longitudinal, perpendicular to the length direction of the mask body 100;

[0049] (2) Lateral, parallel to the length direction of the mask body 100.

[0050] (3) The contact area 140 is formed between the non-deposition area 110 of the mask body 100 and the non-coating area of ​​the part to be deposited 600.

[0051] Example 1:

[0052] See Figure 1 Embodiment 1 of this application provides a masking device, including a mask body 100;

[0053] The mask body 100 has a non-deposition area 110 and a hollowed-out deposition area 120;

[0054] The non-deposition area 110 is used to correspond to the non-coating area of ​​the part to be deposited 600, and the non-deposition area 110 has a first airflow channel 130, which is used to communicate with the non-coating area of ​​the part to be deposited 600.

[0055] In this embodiment, the non-deposition area 110 is the area where the mask body 100 blocks deposition, so as to prevent gas from being deposited on the non-coated area of ​​the workpiece 600.

[0056] The aforementioned deposition area 120 is a non-blocking deposition area of ​​the mask body 100, used for gas deposition on the coating area of ​​the workpiece 600 to be deposited.

[0057] The aforementioned deposition object 600 is a substrate or substrate for which thin film deposition is to be performed; wherein, the deposition object 600 has a coated area and a non-coated area, and when the mask body 100 is placed on the deposition object 600, the coated area on the deposition object 600 corresponds to the deposition area 120 of the mask body 100, and the non-coated area on the deposition object 600 corresponds to the non-deposition area 110 of the mask body 100.

[0058] Initially, the mask body 100 is placed on the workpiece 600 to be deposited, so that the non-deposition area 110 corresponds to the non-coating area of ​​the workpiece 600, and the deposition area 120 corresponds to the coating area of ​​the workpiece 600. During the reactive gas deposition process of thin film deposition, by setting a first airflow channel 130 in the non-deposition area 110, the airflow flowing into the contact area 140 formed between the non-deposition area 110 of the mask body 100 and the non-coating area of ​​the workpiece 600 will be discharged from the first airflow channel 130, thereby preventing gas from being deposited on the non-coating area of ​​the workpiece 600 and thus avoiding the generation of shadows.

[0059] In some embodiments, during the introduction of precursor gas for thin film deposition, the first airflow channel 130 is also used to allow external inert gas to be introduced into the contact area 140 to prevent precursor gas in the deposition chamber from entering the contact area 140.

[0060] In some embodiments, the mask body 100 in the non-deposition region 110 is made of one or an alloy of at least two of aluminum, steel, iron, and chromium. This results in a mask body 100 with good mechanical properties and minimal deformation under heat, making it suitable for use in thin film deposition equipment with high process temperatures.

[0061] Preferably, the mask body 100 in the non-deposition region 110 is made of Invar steel, which gives the mask body 100 in the non-deposition region 110 excellent mechanical properties while its deformation caused by heat is very small, making it suitable for thin film deposition processing at various process temperatures.

[0062] In some embodiments, the number of deposition regions 120 is one, and the non-deposition regions 110 surround the deposition region 120; in this case, the masking device is suitable for a single coating region on the part 600 to be deposited. In other embodiments, the number of deposition regions 120 is at least two, with some of the non-deposition regions 110 surrounding the deposition region 120 and others located between two adjacent deposition regions 120; in this case, the masking device is suitable for at least two coating regions on the part 600 to be deposited. In practical applications, the masking device for the corresponding deposition region 120 can be selected for processing according to the number of coating regions on the part 600 to be deposited.

[0063] Further, see Figure 1 The mask body 100 includes a deposition partition 150 and a first mask plate 160 and a second mask plate 170 disposed at intervals.

[0064] The deposition baffle 150 is disposed between the non-deposition region 110 and the deposition region 120;

[0065] The first mask plate 160 and the second mask plate 170 are both disposed in the non-deposition area 110, and the deposition partition plate 150 is also disposed between the first mask plate 160 and the second mask plate 170; the first airflow channel 130 is formed by the first mask plate 160, the second mask plate 170 and the deposition partition plate 150.

[0066] The second mask plate 170 has a channel 171 communicating with the first airflow channel 130; when the second mask plate 170 contacts the workpiece 600 to be deposited, the second mask plate 170 has a channel 171 communicating with the first airflow channel 130, and the channel 171 is used to connect the first airflow channel 130 and the non-coating area of ​​the workpiece 600 to be deposited.

[0067] In this embodiment, the deposition partition 150 is used to divide the mask body 100 into a non-deposition area 110 and a deposition area 120. The deposition partition 150 is also used to block the gas in the deposition area 120 from entering the non-deposition area 110 during the film deposition process, so that the gas is concentrated in the deposition area 120 for deposition, while also preventing the gas from being deposited on the non-deposition area 110, thereby avoiding the generation of shadow effect.

[0068] In practical applications, when the mask body 100 is placed on the part to be deposited 600, the second mask plate 170 abuts against the part to be deposited 600. At this time, the deposition area 120 of the mask body 100 corresponds to the coating area of ​​the part to be deposited 600, so that when the thin film is deposited, the gas is deposited on the coating area of ​​the part to be deposited 600. At the same time, the non-deposition area 110 of the mask body 100 corresponds to the non-coating area of ​​the part to be deposited 600, so as to prevent the gas from being deposited on the non-coating area of ​​the part to be deposited 600.

[0069] During the thin film deposition process, due to the flow of gas, gas may enter the non-deposition area 110 from the connection gap between the end of the second mask plate 170 near the deposition area 120 and the workpiece 600 to be deposited. At this time, due to the arrangement of the channel 171 on the second mask plate 170, the gas entering the contact area 140 can be discharged after passing through the channel 171 and the first gas flow channel 130 in sequence, thereby avoiding the deposition of gas on the non-coating area to be deposited, and thus avoiding the generation of shadow effect.

[0070] In some embodiments, the non-deposition region 110 and the deposition region 120 are respectively disposed on the left and right sides of the deposition partition 150 in the transverse direction, and the first mask plate 160 and the second mask plate 170 are respectively disposed on the upper and lower sides of the deposition partition 150 in the longitudinal direction. In this way, the deposition partition 150 separates the non-deposition region 110 and the deposition region 120, and the deposition partition 150, the first mask plate 160 and the second mask plate 170 cooperate to form the first airflow channel 130.

[0071] In some embodiments, the deposition partition 150 is formed by bending one end of the first mask 160 near the deposition region 120 along the direction of the first mask 160 near the second mask 170, that is, the deposition partition 150 is integrally formed with the first mask 160, thus effectively ensuring the structural strength of the deposition partition 150. In other embodiments, the deposition partition 150 is detachably connected to the first mask 160 and / or the second mask 170, thereby facilitating the processing of the deposition partition 150 and reducing the processing difficulty.

[0072] In some embodiments, the longitudinal height of the deposition partition 150 and the longitudinal distance between it and the first mask 160 and the second mask 170 are equal. This ensures that when the mask body 100 is placed on the workpiece 600 to be deposited, the end of the deposition partition 150 near the second mask 170 abuts against the workpiece 600, while the second mask 170 abuts against the workpiece 600. This ensures a good fit between the mask body 100 and the workpiece 600, thereby reducing the amount of gas entering from the connection between the mask body 100 and the workpiece 600 during the thin film deposition process.

[0073] In some embodiments, the outer surfaces of the first mask 160 and / or the second mask 170 are provided with a protective coating. This protective coating is used to prevent the first mask 160 and the second mask 170 from being corroded and damaged during the thin film deposition process; in addition, the protective coating is insulating, which can prevent the first mask 160 and the second mask 170 from forming easily discharged charge concentration points in the plasma thin film deposition environment.

[0074] In some embodiments, the material of the above-mentioned thin film protective layer is any one of the following: cobalt or nickel electroplating coating, magnesium or aluminum electroplating and its surface-modified coating, fluorinated asphalt, n-dodecyl mercaptan, organooxysilane nanocoating, polytetrafluoroethylene, polyvinylidene fluoride and other organic coatings, alumina, zirconium oxide and other anodic oxide layers, and plasma arc sputtering coating.

[0075] Preferably, the material of the above-mentioned thin film protective layer is an alumina sputtered coating. During the preparation process, the roughness, density and insulation of the alumina sputtered coating are easy to control, reducing the processing difficulty.

[0076] In some embodiments, the aforementioned channel 171 may be located at one end of the second mask plate 170 near the deposition region 120. This allows gas to be discharged once it enters from the connection gap between the end of the second mask plate 170 near the deposition region 120 and the workpiece 600 to be deposited, through the gas path structure formed by the channel 171 and the first airflow channel 130, effectively improving the gas discharge efficiency at the contact region 140. In other embodiments, the aforementioned channel 171 may also be located at one end of the second mask plate 170 near the deposition region 120, or in the middle of the second mask plate 170. In this case, both ends of the deposition partition plate 150 in the longitudinal direction can be connected and fixed to the first mask plate 160 and the second mask plate 170 respectively. This allows gas entering the contact region 140 to enter the first airflow channel 130 while also increasing the connection strength of the deposition partition plate 150, thereby improving the stability of the deposition partition plate 150 in use.

[0077] In some embodiments, the number of the aforementioned channels 171 is one, which is arranged around the deposition region 120 to ensure that it can be used in all directions to allow gas entering the contact region 140 to enter the first airflow channel 130. In other embodiments, the number of the aforementioned channels 171 is at least two, which are sequentially arranged around the deposition region 120, thereby ensuring the structural strength of the second mask plate 170 while also allowing gas entering the contact region 140 to enter the first airflow channel 130.

[0078] Further, see Figure 1 and Figure 2 The masking device further includes a support member 180;

[0079] The support member 180 is disposed in the first airflow channel 130, and the two ends of the support member 180 abut against the first mask plate 160 and the second mask plate 170 respectively.

[0080] In this embodiment, the support member 180 is used to support the first mask plate 160 and the second mask plate 170 respectively, so that the first mask plate 160 and the second mask plate 170 are kept apart. At the same time, the support member 180 also improves the impact resistance of the first mask plate 160 and the second mask plate 170 to avoid deformation of the first mask plate 160 and / or the second mask plate 170 after being hit.

[0081] In some embodiments, the transverse cross-section of the support member 180 is circular, polygonal, etc., and no specific limitation is made here.

[0082] In some embodiments, the number of the aforementioned support members 180 is one, and the longitudinal cross-sectional area of ​​the support member 180 is smaller than the longitudinal cross-sectional area of ​​the first airflow channel 130; this is to avoid the support member 180 blocking the flow of gas within the first airflow channel 130. In other embodiments, the number of the support members 180 is at least two, with adjacent support members 180 spaced apart; thus, at least two support members 180 can support the first mask plate 160 and the second mask plate 170 in multiple orientations, making the structure formed by the first mask plate 160, the second mask plate 170, and the deposition partition 150 stable and reliable.

[0083] In some embodiments, when the number of supports 180 is at least two, each support 180 is arranged in an array within the first airflow channel 130, thereby making the supporting force on the first mask plate 160 and the second mask plate 170 uniform, thereby further improving the supporting effect.

[0084] In some embodiments, when the number of supports 180 is at least two, the spacing between two adjacent supports 180 is 1 mm to 9 mm. This avoids the situation where the spacing between two supports 180 is less than 1 mm, resulting in insufficient gas flow between two adjacent supports 180 in the first airflow channel 130, causing exhaust difficulties and making it difficult for gas to be discharged between the second mask 170 and the plate to be deposited; at the same time, it also avoids the situation where the spacing between supports 180 is greater than 9 mm, causing the portions of the first mask 160 and the second mask 170 lacking support 180 to be easily deformed due to excessive or insufficient air pressure in the first airflow channel 130.

[0085] Optionally, the spacing between two adjacent support members 180 is selected from one or a range formed by two of the following: 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm, 5 mm, 5.5 mm, 6 mm, 6.5 mm, 7 mm, 7.5 mm, 8 mm, 8.5 mm, and 9 mm.

[0086] In some embodiments, the longitudinal height of the support member 180 is between 50 micrometers and 200 micrometers. This is to avoid the longitudinal height within the first airflow channel 130 being too small due to the longitudinal height of the support member 180 being less than 50 micrometers, resulting in a low flow rate per unit time; at the same time, it also avoids the first airflow channel 130 being stretched longitudinally due to the longitudinal height of the support member 180 being greater than 200 micrometers, which would make the first mask plate 160 and the second mask plate 170 more susceptible to large deformation caused by excessive or insufficient air pressure within the first airflow channel 130, thus causing the support member 180 to break.

[0087] Optionally, the longitudinal height of the support member 180 is selected from one or a range of 50 micrometers, 60 micrometers, 70 micrometers, 80 micrometers, 90 micrometers, 100 micrometers, 110 micrometers, 120 micrometers, 130 micrometers, 140 micrometers, 150 micrometers, 160 micrometers, 170 micrometers, 180 micrometers, 190 micrometers, and 200 micrometers.

[0088] In some embodiments, the lateral dimension of the support member 180 is 0.5 mm to 3 mm.

[0089] When the cross-sectional shape of the support member 180 is circular, the cross-sectional dimension of the support member 180 is the diameter; when the cross-sectional shape of the support member 180 is square, the cross-sectional dimension of the support member 180 is the length.

[0090] This is to avoid the structural strength of the support member 180 being poor due to its lateral dimension being less than 0.5 mm, resulting in poor support effect on the first mask plate 160 and the second mask plate 170, which would make the first mask plate 160 and the second mask plate 170 susceptible to deformation due to excessive or insufficient air pressure in the first airflow channel 130. At the same time, it also avoids the situation where the lateral dimension of the support member 180 is greater than 3 mm, resulting in the support member 180 occupying too much space in the first airflow channel 130, compressing the space in the first airflow channel 130, and causing a small flow rate that can pass through the first airflow channel 130 per unit time.

[0091] Optionally, the lateral dimension of the support member 180 is selected from one or a range of 0.5 mm, 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, or both.

[0092] Further, see Figure 1 The masking device further includes a mask frame 190;

[0093] The first mask plate 160 and the second mask plate 170 are both connected to the mask frame 190, and the mask frame 190 has at least one second airflow channel 191 that communicates with the first airflow channel 130.

[0094] In this embodiment, the mask frame 190 serves to fix the first mask plate 160 and the second mask plate 170; at the same time, a second airflow channel 191 is provided inside the mask frame 190. In actual application, the gas located in the contact area 140 will be discharged after passing through the first airflow channel 130 and the second airflow channel 191 in sequence.

[0095] In some embodiments, the mask frame 190 is a metal frame, and its material may be any one of aluminum, steel, iron, chromium, nickel, copper and their alloys.

[0096] Preferably, the mask frame 190 is made of aluminum alloy, which makes it easy to connect and fix with the first mask plate 160 and the second mask plate 170, and provides good adhesion.

[0097] In some embodiments, the edges and corners of the mask frame 190 are chamfered or rounded. This is to prevent the mask frame 190 from scratching the thin film deposition equipment during movement. Furthermore, if the mask device with the mask frame 190 is used in equipment that generates plasma, such as PECVD or PEALD, the chamfered or rounded edges and corners of the mask frame 190 can prevent excessive plasma accumulation in these areas, thereby preventing the hazards of plasma discharge.

[0098] In some embodiments, the first mask plate 160 is fixed to the mask frame 190 by bonding and / or welding; in this way, the connection stability between the first mask plate 160 and the mask frame 190 is ensured.

[0099] In some embodiments, the second mask 170 is fixed to the mask frame 190 by adhesive bonding and / or welding. This ensures the stability of the connection between the first mask 160 and the mask frame 190.

[0100] In some embodiments, the mask frame 190 is provided with a fixing groove 192, and the end of the first mask plate 160 away from the deposition area 120 is mounted on the fixing groove 192. The fixing groove 192 is provided to facilitate the connection and fixation of the first mask plate 160 and the mask frame 190. At the same time, the longitudinal height of the fixing groove 192 is the same as the thickness of the first mask plate 160, so that after the first mask plate 160 is connected and fixed to the mask frame 190, the outer surface of the first mask plate 160 is flush with the outer surface of the mask frame 190, so as to avoid the phenomenon that the first mask plate 160 protrudes outside the mask frame 190 and is easily scratched by other equipment.

[0101] In some embodiments, the second airflow channel 191 is a longitudinal channel; the longitudinally arranged second airflow channel 191 is easy to process and form on the mask frame 190, reducing processing difficulty. In other embodiments, the second airflow channel 191 is a guide channel; the guide channel plays a guiding role, used to guide the gas in the first airflow channel 130 into the second airflow channel 191, thereby increasing the flow rate of the gas in the first airflow channel 130, and thus improving the gas discharge efficiency at the contact area 140.

[0102] In some embodiments, when the second airflow channel 191 is a guide channel, the angle between the guide channel and the longitudinal plane is an acute angle, so that the guide channel is inclined to the longitudinal plane, thereby realizing the guiding function of the guide channel.

[0103] Preferably, the acute angle range is (0, 90).

[0104] In some embodiments, the number of the second airflow channels 191 is one, so that while ensuring the structural strength of the mask frame 190, the second airflow channel 191 assists the first airflow channel 130 in discharging gas from the contact area 140. In other embodiments, the number of the second airflow channels 191 is at least two. At least two second airflow channels 191 can effectively improve the gas discharge efficiency in the first airflow channel 130, thereby improving the gas discharge efficiency in the contact area 140.

[0105] Example 2

[0106] See Figure 4 Embodiment 2 of this application provides a thin film deposition apparatus, comprising:

[0107] Deposition chamber;

[0108] A stage 300 is disposed in the deposition chamber and is used to support the part 600 to be deposited.

[0109] The masking device described above is disposed on the stage 300 and is used to mask the part 600 to be deposited on the stage 300.

[0110] A pressure regulating device 400, the output end of which is connected to the first airflow channel 130 for regulating the air pressure in the first airflow channel 130.

[0111] In practical applications, the object to be deposited 600 is first placed on the stage 300 in the deposition chamber. When the reaction gas is deposited on the object to be deposited 600, the pressure regulating device 400 can be controlled to exhaust gas so that the pressure in the first airflow channel 130 is lower than the pressure in the deposition chamber, thereby achieving the purpose of depressurizing the first airflow channel 130. This makes it easier for the gas entering the contact area 140 to be guided into the first airflow channel 130, thereby improving the gas discharge efficiency in the contact area 140.

[0112] Thus, during the reactive gas deposition process of thin film deposition, by providing a first airflow channel 130 in the non-deposition area 110, the gas flowing into the contact area 140 will be discharged from the first airflow channel 130, thereby preventing gas from depositing on the non-coating area of ​​the workpiece 600 and thus avoiding the generation of shadowing. In addition, the air pressure of the first airflow channel 130 can be adjusted by the air pressure regulating device 400 to solve the problem of blockage in the first airflow channel 130.

[0113] In some embodiments, the first airflow channel 130 is also used to control the pressure regulating device 400 to make the pressure of the first airflow channel 130 lower than the pressure of the deposition chamber and higher than the pressure of the deposition chamber when the precursor gas is introduced into the deposition chamber, so as to pressurize the first airflow channel 130 and prevent the precursor gas in the deposition chamber from entering the contact area 140.

[0114] In some embodiments, the gas introduced into the pressure regulating device 400 during the pressurization process is an inert gas, such as helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), or argon (Og). Using an inert gas can avoid affecting the deposition material 600 in the film deposition stage and ensure the quality of the finished film.

[0115] In some embodiments, the pressure regulating device 400 includes a vacuum pump 410, a positive pressure chamber 420, a negative pressure chamber 430, a positive pressure valve 440, and a negative pressure valve 450.

[0116] One end of the positive pressure chamber 420 and the negative pressure chamber 430 are connected to the vacuum pump 410; the other end of the positive pressure chamber 420 and the negative pressure chamber 430 are connected to the first airflow channel 130.

[0117] In practical applications, the positive pressure chamber 420 can be started or stopped by controlling the positive pressure valve 440. At this time, the first airflow channel 130 is pressurized by the cooperation of the vacuum pump 410 and the positive pressure chamber 420; or, the first airflow channel 130 is depressurized by the cooperation of the vacuum pump 410 and the negative pressure chamber 430.

[0118] Further, see Figure 4 The thin film deposition apparatus further includes a position adjustment device 500;

[0119] The position adjustment device 500 includes a position guide 510 and a drive component;

[0120] One end of the position guide 510 is connected to the mask body 100;

[0121] The output end of the drive is connected to the other end of the position guide 510, and is used to adjust the position of the mask body 100 through the position guide 510.

[0122] In this embodiment, the position guide 510 is moved by the driving component, thereby moving the mask body 100 connected to the position guide 510 to meet the mask requirements of the mask body 100 on the substrate 600 of different specifications, and has wide applicability.

[0123] In some embodiments, the position guide 510 may be at least one of an X-guide, a Y-guide, a Z-guide, and a rotation guide; thus, the mask body 100 can be moved in multiple directions, further improving the applicability of the mask body 100.

[0124] In some embodiments, the driving component may be a motor, a cylinder, a hydraulic cylinder, etc., and no specific limitation is made here.

[0125] Preferably, the driving component is a motor, which can transmit power to the position guide 510 through one of the following: synchronous belt transmission structure, gear transmission structure, or lead screw transmission structure, so that the mask body 100 driven by the position guide 510 can move in the guiding direction of the position guide 510.

[0126] In some embodiments, the position guide 510 has a third airflow channel 511, one end of which is connected to the first airflow channel 130;

[0127] The output end of the air pressure regulating device 400 is connected to the other end of the third airflow channel 511 so as to regulate the air pressure in the first airflow channel 130 through the third airflow channel 511.

[0128] In practical applications, the third airflow channel 511 assists the first airflow channel 130 in discharging the gas located in the contact area 140; thus, the third airflow channel 511 is opened on the position guide 510, eliminating the need to set up a separate third airflow channel 511, thereby improving the integrity of the thin film deposition equipment of this application.

[0129] In some embodiments, when the mask device includes a mask frame 190, one end of the first airflow channel 130 is connected to a hole 171 on the second mask plate 170, and the two ends of the second airflow channel 191 on the mask frame 190 are connected to the other end of the first airflow channel 130 and one end of the third airflow channel 511, respectively. The other end of the third airflow channel 511 is connected to the air pressure regulating device 400.

[0130] Obviously, the embodiments described above are only some embodiments of this application, not all embodiments. The accompanying drawings show preferred embodiments of this application, but do not limit the patent scope of this application. This application can be implemented in many different forms; rather, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the disclosure of this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing specific embodiments, or make equivalent substitutions for some of the technical features. Any equivalent structures made using the content of this application's specification and drawings, directly or indirectly applied to other related technical fields, are similarly within the scope of patent protection of this application.

Claims

1. A masking device, characterized in that, Includes the mask body; The mask body has a non-deposition area and a hollowed-out deposition area; The non-deposition area is used to correspond to the non-coating area of ​​the part to be deposited, and the non-deposition area has a first airflow channel, which is used to communicate with the non-coating area of ​​the part to be deposited. The mask body includes a deposition partition and a first mask plate and a second mask plate arranged at intervals; The deposition baffle is disposed between the non-deposition area and the deposition area; Both the first mask and the second mask are disposed in the non-deposition area, and the deposition partition is also disposed between the first mask and the second mask; the first airflow channel is formed by the first mask, the second mask, and the deposition partition. The second mask plate has a channel communicating with the first airflow channel, and the channel is used to connect the first airflow channel and the non-coating area of ​​the part to be deposited; The masking device also includes a support and a mask frame; The support member is disposed in the first airflow channel, and both ends of the support member abut against the first mask plate and the second mask plate respectively; Both the first mask plate and the second mask plate are connected to the mask frame, and the mask frame has at least one second airflow channel communicating with the first airflow channel.

2. The masking device according to claim 1, characterized in that, The channel is located at one end of the second mask plate near the deposition area; or... The channel is located in the middle of the second mask plate; or, The channels are arranged around the deposition area.

3. The masking device according to claim 1, characterized in that, The number of the support members is one, and the longitudinal cross-sectional area of ​​the support member is smaller than the longitudinal cross-sectional area of ​​the first airflow channel; or, The number of the support members is at least two, and the two adjacent support members are spaced apart, with the spacing between the two adjacent support members being 1 mm to 9 mm; The longitudinal height of the support member is 50 micrometers to 200 micrometers; or, The lateral dimension of the support member is 0.5 mm to 3 mm.

4. The masking device according to claim 1, characterized in that, The outer surface of the first mask and / or the second mask is provided with a protective coating; or, The second airflow channel is a longitudinal channel.

5. The masking device according to claim 1, characterized in that, The longitudinal height of the deposition partition is equal to the longitudinal distance between the first mask and the second mask.

6. The masking device according to claim 1, characterized in that, The mask frame is a metal frame, and its material is selected from any one of aluminum, steel, iron, chromium, nickel, copper and their alloys; The edges and corners of the mask frame are chamfered or rounded.

7. The masking device according to claim 1, characterized in that, The mask frame has a fixing groove, and the end of the first mask plate away from the deposition area is mounted on the fixing groove; The angle between the second airflow channel and the longitudinal plane is an acute angle.

8. A thin film deposition apparatus, characterized in that, include: Deposition chamber; A stage, which is disposed in the deposition chamber and is used to support the part to be deposited; The masking apparatus as described in any one of claims 1 to 7, wherein the masking apparatus is disposed on the stage, and the masking apparatus is used to mask the part to be deposited on the stage; A pressure regulating device, the output end of which is connected to the first airflow channel to regulate the air pressure in the first airflow channel.

9. The thin film deposition apparatus according to claim 8, characterized in that, The thin film deposition equipment also includes a position adjustment device; The position adjustment device includes a position guide and a drive component; One end of the position guide is connected to the mask body; The output end of the drive unit is connected to the other end of the position guide, and is used to adjust the position of the mask body through the position guide.

10. The thin film deposition apparatus according to claim 9, characterized in that, The position guide is provided with a third airflow channel, one end of which is connected to the first airflow channel; The output end of the air pressure regulating device is connected to the other end of the third airflow channel, so as to regulate the air pressure in the first airflow channel through the third airflow channel.

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