Micro-nano infrared resonant sensor with integrated optical path switch structure and preparation method thereof

Abstract

The present invention relates to the field of infrared sensor technology, and in particular to a micro-nano infrared resonant sensor with an integrated optical path switch structure and a preparation method thereof, wherein the infrared resonant sensor comprises a resonant structure and a substrate, wherein the resonant structure is located above the substrate and there is a gap between the substrate and the resonant structure, wherein a light-incoming amount control structure is arranged above the resonant structure, wherein the resonant structure comprises a resonant plate, wherein a piezoelectric layer is arranged above the resonant plate, wherein a metal electrode layer is arranged above the piezoelectric layer, wherein an infrared sensitive layer is arranged above the metal electrode layer, wherein the light-incoming amount control structure comprises a light-blocking plate supported by a light-blocking plate support beam, wherein the light-blocking plate is displaced by driving the light-blocking plate support beam. By adopting the structure proposed by the present invention, the light-blocking plate is moved to block the irradiation of the sensor by light, thereby reducing the temperature of the sensing material of each pixel of the sensor and restoring it to the sensing linear region, thereby improving the sensitivity and dynamic response characteristics of the sensor.

Description

Technical Field

[0001] The present invention relates to the technical field of infrared sensors, and in particular to a micro-nano infrared resonant sensor with an integrated optical path switch structure and a preparation method thereof. Background Art

[0002] Uncooled infrared MEMS sensors mainly detect temperature changes by detecting infrared radiation emitted by the object itself. According to the sensing mechanism of infrared sensitive materials, they can be divided into photoelectric type (photon type) and thermal detection type. Photon type infrared sensors sense objects by receiving and detecting infrared photons, and have high accuracy and sensitivity. Thermal detection type infrared sensors work by sensing the temperature difference of objects and can detect the thermal radiation of objects. Infrared sensors can be divided into static sensors and dynamic sensors based on the working mode when obtaining sensitive material sensing signals. Among them, static sensor chips can be divided into sensing principles based on thermocouples, thermopiles, etc. When infrared radiation enters the sensor, it causes temperature changes in the detector, which in turn generates weak electrical signals. The chip also includes signal amplifiers and processing circuits for amplifying and processing weak signals from the detector and converting them into digital signals or analog outputs. Dynamic sensors are infrared sensors implemented using MEMS resonant structures. They are sensors that use MEMS technology and resonance principles to detect infrared radiation. The sensor contains a miniaturized resonant structure, which is usually made by micromachining technology. This miniaturized mechanical vibration device has a specific resonant frequency. There is an infrared sensitive absorption layer in the resonant structure. When infrared radiation enters the sensor, infrared radiation of a specific wavelength will be converted into heat by the infrared sensitive absorption layer, causing the resonant structure to produce a slight resonant frequency change, making it highly sensitive to infrared radiation of a specific wavelength. The sensor determines the absorbed infrared radiation energy by detecting the resonant frequency change of the resonant structure, thereby realizing the detection of infrared radiation.

[0003] Infrared sensors usually measure by sensing the infrared radiation radiated by the target object. The infrared detection sensitive layer on the sensor receives the infrared radiation and converts it into a corresponding electrical signal. The strength of this electrical signal is related to the radiation intensity of the target object. When the infrared intensity radiated by the target object is small or far away from the sensor, the sensor can linearly convert the infrared radiation to an electrical signal and output a corresponding voltage or current. However, when the infrared intensity radiated by the target object exceeds the design range of the sensor, the infrared sensitive layer reaches its saturation point and can no longer convert higher infrared intensities into larger electrical signals. At this point, the output of the sensor will remain at a fixed maximum value and can no longer reflect the actual changes of the target object. Therefore, the infrared sensor will produce a nonlinear signal saturation phenomenon.

[0004] Different infrared sensitive materials have different response characteristics to infrared radiation of a specific wavelength. The upper limit of the sensor is usually affected by the material's own absorption saturation effect on infrared radiation. The structure and morphology of infrared sensitive materials will also affect their upper limit of sensing. For example, thin-film infrared sensitive materials may produce saturation when receiving a large amount of infrared radiation, thereby limiting their upper limit of sensing. When the amount of infrared radiation is too large, the output of the infrared sensor does not change linearly in relation to the input signal being measured, that is, sensor nonlinearity occurs. At this time, the relationship between the input and output of the sensor is not a straight line, and this nonlinearity will affect the accuracy and precision of the measurement when using the sensor.

[0005] At present, infrared sensors are mainly large-scale infrared focal plane array sensors, which realize infrared imaging by micron-scale sensing pixel arrays. Large pixel size leads to reduced spatial resolution. Even if there is a larger radiation change within the sensor range, the sensor cannot provide fine spatial details due to the large size of each pixel. Smaller pixel size can provide higher spatial resolution, allowing the sensor to detect more subtle infrared radiation changes. Smaller pixel size can also improve the sensor's detail capture ability, making it suitable for applications that require high-precision infrared images. Therefore, infrared sensors are constantly moving towards large-scale sensor arrays with smaller pixels. But when the pixel size becomes smaller, the infrared radiation received by each pixel comes from a smaller area, which may cause the dynamic range of the signal to decrease. When the pixel size becomes smaller, the infrared radiation received by each pixel is relatively small, which means that higher infrared radiation intensity may more easily lead to nonlinear saturation of the sensor.

[0006] When an infrared sensor is subjected to a high infrared radiation intensity and reaches nonlinear saturation, the output signal of the sensor will be distorted. This means that the sensor cannot accurately reflect the intensity changes of the infrared radiation, resulting in distortion of the measurement results. Nonlinear saturation limits the dynamic range of the infrared sensor, that is, the range of radiation that the sensor can measure. Once the sensor reaches the saturation point, it cannot distinguish higher radiation intensities and therefore cannot provide accurate measurements beyond the saturation point. Nonlinear saturation will also cause the dynamic performance of the infrared sensor to degrade. When the sensor measurement reaches its nonlinear saturation state, it will not be able to respond in time to changes in the infrared signal intensity of the detection target. It must wait for the infrared radiation intensity to decrease and the temperature of the infrared sensitive material to decrease before it can return to the linear region and respond to the external infrared signal. This time will not be able to respond in time for high-dynamic, high-intensity infrared detection targets, thereby reducing the response frame rate of the sensor's real imaging.

[0007] Therefore, solving the problem of infrared detectors entering a nonlinear saturation state and improving the sensitivity of the sensor are currently important challenges in improving sensor performance. Under the condition that the performance of infrared sensitive materials is certain, how to prevent the infrared sensor from entering the nonlinear response area and reduce the time when the sensor enters the infrared response nonlinear area due to high-intensity infrared radiation is the key to improving the sensitivity of infrared sensors and improving the sensor's detection performance for high-intensity, high-dynamic detection targets. Summary of the invention

[0008] The object of the present invention is to provide a micro-nano infrared resonant sensor with an integrated optical path switch structure and a preparation method thereof, which can solve the above-mentioned technical problems.

[0009] The present invention provides a micro-nano infrared resonant sensor with an integrated optical path switch structure, comprising a resonant structure and a substrate, wherein the resonant structure is located above the substrate and there is a gap between the resonant structure and the substrate, a light input amount control structure is arranged above the resonant structure, the resonant structure comprises a resonant plate, a piezoelectric layer is arranged above the resonant plate, a metal electrode layer is arranged above the piezoelectric layer, an infrared sensitive layer is arranged above the metal electrode layer, the light input amount control structure comprises a light baffle supported by a light baffle support beam, and the light baffle is displaced by driving the light baffle support beam.

[0010] Preferably, the resonant structure is supported by a supporting structure with a gap between the structure and the substrate to achieve resonant vibration.

[0011] Preferably, the substrate is made of one of silicon and diamond.

[0012] Preferably, the infrared sensitive layer is made of one of vanadium oxide, indium selenide, indium antimonide, and indium cadmium mercury.

[0013] Preferably, the resonance plate is made of one of silicon and silicon oxide.

[0014] Preferably, the resonance plate is made of polycrystalline silicon.

[0015] Preferably, the material of the piezoelectric layer is one of zinc oxide, lead zirconate titanate and aluminum nitride.

[0016] Preferably, the metal electrode layer is made of one of gold, silver, copper and aluminum.

[0017] Preferably, the light blocking plate is made of one of silicon and silicon oxide.

[0018] Preferably, the light blocking plate is made of polycrystalline silicon.

[0019] Preferably, the driving mode of the support beam is one of a piezoelectric driving mode, an electrostatic driving mode and a thermal driving mode.

[0020] The present invention also provides a method for preparing a micro-nano infrared resonant sensor with an integrated optical path switch structure, comprising the following steps:

[0021] Step 1, growing a sacrificial silicon dioxide layer on a substrate;

[0022] Step 2, CVD depositing a silicon material layer on the silicon dioxide layer;

[0023] Step 3, sputtering and depositing a layer of piezoelectric material on the silicon material layer;

[0024] Step 4, depositing a metal electrode layer on the upper surface of the piezoelectric material;

[0025] Step 5, photolithography and patterning the metal electrode layer, and etching to form a metal electrode structure;

[0026] Step 6: depositing a silicon dioxide layer on the surface of the metal electrode layer as an insulating layer;

[0027] Step 7: growing an infrared sensitive material on the surface of the silicon dioxide layer as an infrared sensitive layer, and etching the sensitive material;

[0028] Step 8, growing a spacer layer of silicon dioxide on the infrared sensitive layer;

[0029] Step 9, then growing a polysilicon layer, an aluminum nitride piezoelectric layer and a metal layer;

[0030] Step 10, realizing the metal electrode of the light input control structure by photolithography;

[0031] Step 11, then respectively etch the piezoelectric driving structure of the light quantity control structure, the polysilicon light shielding plate and the light shielding plate supporting beam structure, the silicon dioxide spacer layer, and the infrared sensitive layer, the piezoelectric layer, and the resonant plate of the resonant structure;

[0032] Step 12: Finally, release the silicon dioxide sacrificial layer to realize a micro-nano infrared resonant sensor with an integrated optical path switch structure.

[0033] Working principle of the present invention:

[0034] Through the adjustable light input control structure, the infrared signal in the infrared light path can be irradiated on the sensitive material of the sensor for a certain time, which can reduce the infrared radiation energy received by the sensor, thereby preventing the output signal of the sensor material from entering the nonlinear saturation region. This principle can effectively reduce the nonlinear saturation state of the sensor material signal, improve the sensitivity and reliability of the output signal, reduce the time for the sensor material to recover from the nonlinear saturation state to the linear state, and improve the effective detection frame rate of the infrared sensor. It has the advantage of greatly improving the performance of the infrared sensor and has a good market value.

[0035] Beneficial effects:

[0036] The infrared resonant sensor of the present invention can realize the control of the amount of infrared light entering, avoiding the problem of decreased sensing sensitivity of the infrared sensor in the nonlinear sensitive area. In the use scenario where the external infrared radiation is strong, the detection performance of the sensitive material of the resonant infrared sensor is easy to enter a nonlinear saturation state. At this time, it will be difficult to achieve a high-precision response to the irradiation of external infrared light, or even no response signal. By adopting the non-cooled infrared sensor structure with a light intake control structure proposed by the present invention, the light intake control structure can be opened after the sensitive material enters the nonlinear saturation state, and the light baffle can be moved to the top of the sensitive material to block the irradiation of the sensor by light, thereby reducing the temperature of the sensing material on each pixel of the sensor and restoring it to the sensing linear area, thereby improving the sensitivity and dynamic response characteristics of the sensor, and greatly improving the performance of the infrared sensor in high sensitivity and high frame rate detection.

[0037] The preparation method of the present invention realizes the integrated preparation of the micromechanical switch structure and the sensor in the infrared optical path. Through the micro-nano processing technology, the semiconductor monolithic integrated preparation of the infrared sensor and the optical path controllable switch structure is realized, and there is no need to separately manufacture the optical switch device and the infrared sensor device for system integration, which greatly reduces the size of the device and reduces power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0039] Figure 1 A schematic side view of the infrared resonant sensor provided in Example 1 of the present invention;

[0040] Figure 2 A top view of the structure of the infrared resonant sensor provided in Example 1 of the present invention;

[0041] Figure 3 A top view of the structure of the infrared resonant sensor provided by Embodiment 1 of the present invention when the light shielding plate is closed;

[0042] Figure 4 A schematic diagram of a circular resonant structure and a circular light-blocking plate structure in the infrared resonant sensor provided in Embodiment 2 of the present invention;

[0043] Figure 5It is a schematic diagram of the circular light blocking plate in Embodiment 2 of the present invention being moved to the top of the resonant structure under the control of the driving voltage to block the infrared signal in the infrared light path from irradiating the upper surface of the infrared sensitive layer;

[0044] Figure 6 This is a micro-machining process flow chart of the infrared resonant sensor provided by the present invention. The dark black is the silicon wafer substrate, the gray is the silicon oxide layer, the light blue is the grown silicon layer, the dark green is the piezoelectric layer, the pink is the electrode structure, and the bright green is the infrared sensitive layer;

[0045] Figure 7 It is a schematic diagram of the linear region and the nonlinear region mentioned in the background technology of the present invention.

[0046] Explanation of the accompanying drawings: 1-resonance structure, 101-resonance plate, 102-piezoelectric layer, 103-metal electrode layer, 104-infrared sensitive layer, 2-substrate, 3-gap, 4-light input control structure, 401-light baffle, 402-piezoelectric drive structure, 403-light baffle support beam, 5-support structure, 6-support columns around the sensor. DETAILED DESCRIPTION

[0047] The technical solution of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0048] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0049] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. In addition, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal connection of two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] Example 1

[0051] A micro-nano infrared resonant sensor with an integrated optical path switch structure, such as Figure 1-5 As shown, it includes a resonant structure 1 and a substrate 2. The resonant structure 1 is located above the substrate 2 and there is a gap 3 between the resonant structure 1 and the substrate 2. Specifically, the resonant structure 1 is supported by a support structure 5 and there is a gap between the resonant structure 1 and the substrate 2 to achieve resonant vibration. A light-incoming amount control structure 4 is provided above the resonant structure 1. The resonant structure 1 is square as a whole and includes a resonant plate 101. A piezoelectric layer 102 is provided above the resonant plate 101. A metal electrode layer 103 is provided above the piezoelectric layer 102. An infrared sensitive layer 104 is provided above the metal electrode layer 103. The resonant structure 1 works at a certain resonant frequency. When the infrared sensitive layer 104 on the surface is irradiated by infrared light, heat is generated and deformation occurs, thereby causing the frequency of the resonant structure 1 to change. By detecting the change in the resonant frequency, information about the intensity of the infrared signal received by the infrared sensor can be obtained. The light-incoming amount control structure 4 is located above the resonant structure 1. The piezoelectric drive structure 402 drives the light-blocking plate support beam 403 to cause the light-blocking plate 401 to move, thereby realizing the opening and blocking of the infrared light path.

[0052] The light-incoming amount control structure 4 includes a light-blocking plate 401 supported by a light-blocking plate support beam 403 (composed of two square light-blocking plate structures supported by the light-blocking plate support beam). The light-blocking plate support beam 403 is driven to displace the light-blocking plate 401, and the driving method is driven by a piezoelectric driving structure. The substrate material is silicon, the infrared sensitive layer is made of vanadium oxide, the resonant plate is made of silicon, the piezoelectric layer is made of zinc oxide, the metal electrode layer is made of silver, and the light-blocking plate is made of silicon material. The light-incoming amount control structure is composed of a movable light-blocking plate, a light-blocking plate support beam, and an electrode structure. Under the action of a control voltage, the light-blocking plate is displaced to the top of the resonant structure and acts as an optical switch in the optical path. By controlling the light blocking time, the infrared signal energy sensed by the sensor is controlled. When the sensitive layer of the infrared sensor enters the nonlinear saturation state, the light input control switch structure is turned on to block the infrared light in the light path, thereby causing the temperature of the infrared sensitive material to drop and leave the nonlinear saturation sensing state area. At this time, the optical switch is turned on again and the infrared light is irradiated on the infrared sensitive material again, thereby achieving high dynamic and high frame rate detection response of the infrared detector.

[0053] Example 2

[0054] The basic structure is the same as that of Example 1, except that the resonant structure is circular as a whole, and the light input control structure includes a light blocking plate supported by a light blocking plate support beam, and the light blocking plate is a circular plate.

[0055] Working and use process:

[0056] When the system detects that the output of the infrared sensor has entered a nonlinear saturation state, it will open the light-input control structure, drive the light baffle to block the infrared light in the infrared light path from irradiating the infrared sensitive layer, temporarily reduce the temperature of the infrared sensitive material, and allow the sensor sensitive material to return to the linear sensing area. Then the light-input control structure will be closed, that is, the light baffle will be removed, allowing the infrared light to continue to irradiate the infrared sensing material, so as to sense and acquire infrared images. For the infrared focal plane sensor array structure, a corresponding light-input control microstructure is integrated above the sensing pixel of each sensor, which can achieve high-precision control of the large-scale pixel array of the entire focal plane infrared sensor, and reduce the impact of the pixel entering a nonlinear saturation state on the sensor sensitivity and dynamic characteristics.

[0057] The present invention provides a method for manufacturing a micro-nano infrared resonant sensor with an integrated optical path switch structure, comprising the following process steps: Figure 6 shown.

[0058] Step 1, growing a SiO2 silicon dioxide sacrificial layer on a substrate silicon wafer;

[0059] Step 2, depositing a silicon material layer on the silicon dioxide layer by CVD;

[0060] Step 3, sputtering and depositing a layer of piezoelectric material on the silicon material layer;

[0061] Step 4, depositing a metal electrode layer on the upper surface of the piezoelectric material;

[0062] Step 5, photolithography and patterning the metal electrode, and etching to form a metal electrode structure;

[0063] Step 6: depositing a silicon dioxide layer on the surface of the metal electrode layer as an insulating layer;

[0064] Step 7: growing an infrared sensitive material on the surface of the silicon dioxide layer as an infrared sensitive layer, and etching the infrared sensitive material;

[0065] Step 8, growing a spacer layer of silicon dioxide on the infrared sensitive material;

[0066] Step 9, then growing a polysilicon layer, an aluminum nitride piezoelectric material layer and a metal layer;

[0067] Step 10, realizing the metal electrode of the light input control structure by photolithography;

[0068] Step 11, then respectively etch the piezoelectric driving structure of the light quantity control structure, the polysilicon light shielding plate and the light shielding plate supporting beam structure, the silicon dioxide spacer layer, and the infrared sensitive layer, the piezoelectric layer, and the resonant plate of the resonant structure;

[0069] Step 12: Finally, release the silicon dioxide sacrificial layer to realize a micro-nano infrared resonant sensor with an integrated optical path switch structure.

[0070] Optionally, the substrate substrate material may include silicon, diamond and other substrate materials.

[0071] Optionally, the sacrificial layer material may be a material that is easily corroded and released, such as silicon dioxide and silicon nitride.

[0072] Optionally, the piezoelectric material may be lead zirconate titanate PZT, aluminum nitride AlN or other piezoelectric materials.

[0073] Optionally, the infrared sensitive material includes infrared sensitive materials such as vanadium oxide VOx, indium selenide InSb, indium antimonide InSb, indium cadmium mercury IHgCdTe, etc.

[0074] Optionally, the metal electrode material includes gold Au, silver Ag, copper Cu, aluminum Al, etc.

[0075] Optionally, the light shielding plate structure of the light input amount control structure may be a circular, square, rectangular, polygonal or other structure.

[0076] In summary, the present invention provides a micro-nano infrared resonant sensor with an integrated optical path switch structure and a preparation method thereof. The method and device structure of the present invention can realize the integration of infrared sensor pixels and input light switch structures. It is prepared using an IC-compatible process and has the advantages of high sensitivity, miniaturization, low power consumption, high reliability, etc., and has good market application prospects.

[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A micro-nano infrared resonant sensor with an integrated optical path switch structure, characterized in that: It includes a resonance structure and a substrate, wherein the resonance structure is located above the substrate and there is a gap between the resonance structure and the substrate, a light input amount control structure is provided above the resonance structure, the resonance structure includes a resonance plate, a piezoelectric layer is provided above the resonance plate, a metal electrode layer is provided above the piezoelectric layer, an infrared sensitive layer is provided above the metal electrode layer, and the light input amount control structure includes a light baffle supported by a light baffle support beam, and the light baffle is displaced by driving the light baffle support beam.

2. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 1, characterized in that: The resonant structure is supported by a supporting structure, and there is a gap between the resonant structure and the substrate to achieve resonant vibration.

3. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 1, characterized in that: The substrate is made of silicon or diamond.

4. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 1, characterized in that: The infrared sensitive layer is made of one of vanadium oxide, indium selenide, indium antimonide, and indium cadmium mercury.

5. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 1, characterized in that: The resonance plate is made of one of silicon and silicon oxide.

6. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 5, characterized in that: The resonance plate is made of polysilicon.

7. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 1, characterized in that: The material of the piezoelectric layer is one of zinc oxide, lead zirconate titanate and aluminum nitride.

8. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 1, characterized in that: The metal electrode layer is made of one of gold, silver, copper and aluminum.

9. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 1, characterized in that: The light blocking plate is made of one of silicon and silicon oxide.

10. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 9, characterized in that: The light blocking plate is made of polycrystalline silicon.

11. The micro-nano infrared resonant sensor with an integrated optical path switch structure according to claim 1, characterized in that: The driving mode of the support beam is one of a piezoelectric driving mode, an electrostatic driving mode and a thermal driving mode.

12. A method for preparing an infrared resonant sensor according to any one of claims 1 to 11, characterized in that: The following steps are involved: Step 1, growing a sacrificial silicon dioxide layer on a substrate; Step 2, CVD depositing a silicon material layer on the silicon dioxide layer; Step 3, sputtering and depositing a layer of piezoelectric material on the silicon material layer; Step 4, depositing a metal electrode layer on the upper surface of the piezoelectric material; Step 5, photolithography and patterning the metal electrode layer, and etching to form a metal electrode structure; Step 6: depositing a silicon dioxide layer on the surface of the metal electrode layer as an insulating layer; Step 7: growing an infrared sensitive material on the surface of the silicon dioxide layer as an infrared sensitive layer, and etching the sensitive material; Step 8, growing a spacer layer of silicon dioxide on the infrared sensitive layer; Step 9, then growing a polysilicon layer, an aluminum nitride piezoelectric layer and a metal layer; Step 10, realizing the metal electrode of the light input control structure by photolithography; Step 11, then respectively etch the piezoelectric driving structure of the light quantity control structure, the polysilicon light shielding plate and the light shielding plate supporting beam structure, the silicon dioxide spacer layer, and the infrared sensitive layer, the piezoelectric layer, and the resonant plate of the resonant structure; Step 12: Finally, release the silicon dioxide sacrificial layer to realize a micro-nano infrared resonant sensor with an integrated optical path switch structure.

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