Low power high power low noise amplifier circuit based on gain expansion effect

Abstract

The application relates to the fields of microelectronic, semiconductor and communication technology, and particularly relates to a low-power high-power low-noise amplifier circuit based on a gain expansion effect, which comprises a bias circuit with a gain expansion effect; in the case of keeping low power consumption, the output power is linearly increased with the increase of input power due to the gain expansion effect, so that the output 1dB compression point is improved; wherein a radio frequency signal enters from a radio frequency signal input end, is amplified by an amplifier module, and is finally output from a radio frequency signal output end; the bias circuit with the gain expansion effect provides bias for the amplifier module, so that compared with the prior art, the application can provide a high output 1dB compression point while ensuring the low power consumption performance of the circuit.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of microelectronic, semiconductor and communication technology, in particular to a low-power high-power low-noise amplifier circuit based on gain expansion effect. BACKGROUND

[0002] Output 1dB compression point (OP1dB, Output 1dB Compression Point, hereinafter OP1dB) is an important linearity indicator of low-noise amplifier, which indicates the compression of output power of low-noise amplifier with the increase of input power. The conventional radio frequency system requires low-noise amplifier to have low noise, low power consumption, high OP1dB and other performances. Generally, the high OP1dB and low power consumption of low-noise amplifier are contradictory, that is, high OP1dB means high power consumption. The OP1dB of general low-noise amplifier is related to its static bias point, and the conventional method to improve the OP1dB of low-noise amplifier is to improve the static bias point of the circuit, that is, to improve the OP1dB by increasing the power consumption of the circuit.

[0003] For handheld communication devices, the system needs to provide high power output while maintaining the longest standby time of the system. Therefore, a circuit is needed to provide high output 1dB compression point while ensuring low power consumption of the circuit. SUMMARY

[0004] The embodiment of the present application provides a low-power high-power low-noise amplifier circuit based on gain expansion effect, which uses the gain expansion effect to improve the gain of the circuit under high input condition through the bias circuit, improves the output linearity, and thus improves the OP1dB.

[0005] According to an embodiment of the present application, a low-power high-power low-noise amplifier circuit based on gain expansion effect is provided, comprising:

[0006] A radio frequency signal input end for inputting radio frequency signals;

[0007] An amplifier module connected with the radio frequency signal input end for amplifying radio frequency signals;

[0008] A radio frequency signal output end connected with the amplifier module for outputting amplified radio frequency signals;

[0009] A bias circuit module connected with the radio frequency signal output end and the amplifier module respectively for making the working state of the amplifier circuit module at a preset static bias point.

[0010] Preferably, the low-power high-power low-noise amplifier circuit further comprises:

[0011] The first power supply end is connected with the bias circuit module and the amplifier module, and is used for supplying power for the low-power high-power low-noise amplifier circuit.

[0012] Preferably, the low-power high-power low-noise amplifier circuit further comprises a feedback circuit module, and the bias circuit module is connected with the radio frequency signal output end through the feedback circuit module.

[0013] Preferably, the feedback circuit module comprises a seventh resistor and a first capacitor, one end of the seventh resistor is connected with one end of the first capacitor and the bias circuit module, and the other end of the seventh resistor is connected with the radio frequency signal input end; the other end of the first capacitor is connected with the radio frequency signal output end.

[0014] Preferably, the low-power high-power low-noise amplifier circuit further comprises a load inductor and a second power supply end, one end of the load inductor is connected with the second power supply end, and the other end of the load inductor is connected with the amplifier module, one end of the first capacitor away from the sixth resistor and the radio frequency signal output end respectively.

[0015] Preferably, the amplifier module is a third field effect tube, the drain of the third field effect tube is connected with the load inductor, the gate of the third field effect tube is connected with the radio frequency signal input end and one end of the seventh resistor away from the first capacitor respectively, and the source of the third field effect tube is grounded.

[0016] Preferably, the bias circuit module comprises a first field effect tube, a second field effect tube, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and an eighth resistor; wherein,

[0017] The second resistor, the third resistor and the fourth resistor are connected in series, one end of the second resistor away from the third resistor is connected to the first power supply end, and one end of the fourth resistor away from the third resistor is connected between the fifth resistor and the sixth resistor in series;

[0018] One end of the sixth resistor away from the fifth resistor is connected with the radio frequency signal output end; one end of the fifth resistor away from the sixth resistor is connected with the gate of the second field effect tube, the source of the second field effect tube is grounded, and the drain of the second field effect tube is connected with the gate of the first field effect tube;

[0019] The gate of the first field effect tube is connected between the second resistor and the third resistor, the source of the first field effect tube is connected between the third resistor and the fourth resistor, and the source of the first field effect tube is grounded through the eighth resistor, and the drain of the first field effect tube is connected with the first power supply end and one end of the second resistor away from the third resistor through the first resistor.

[0020] Preferably, the bias circuit module comprises a first field effect tube, a second field effect tube, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and a fourth field effect tube; wherein,

[0021] The second resistor, the third resistor and the fourth resistor are connected in series, one end of the second resistor away from the third resistor is connected to the first power terminal, and one end of the fourth resistor away from the third resistor is connected between the fifth resistor and the sixth resistor in series;

[0022] One end of the sixth resistor away from the fifth resistor is connected to the radio frequency signal output terminal, one end of the fifth resistor away from the sixth resistor is connected to the gate of the second field effect transistor, the source of the second field effect transistor is grounded, and the drain of the second field effect transistor is connected to the gate of the first field effect transistor.

[0023] The gate of the first field effect transistor is connected between the second resistor and the third resistor, the source of the first field effect transistor is connected between the third resistor and the fourth resistor, the source of the first field effect transistor is connected to the gate of the fourth field effect transistor, the source and the drain of the fourth field effect transistor are both grounded, and the drain of the first field effect transistor is connected to the first power terminal and one end of the second resistor away from the third resistor through the first resistor.

[0024] Preferably, the bias circuit module comprises a first field effect transistor, a second field effect transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and a fourth field effect transistor; wherein,

[0025] The second resistor, the fourth field effect transistor and the fourth resistor are connected in series, the gate of the fourth field effect transistor is connected to one end of the second resistor, and the source and the drain of the fourth field effect transistor are both connected to the fourth resistor; one end of the second resistor away from the fourth field effect transistor is connected to the first power terminal, and one end of the fourth resistor away from the fourth field effect transistor is connected between the fifth resistor and the sixth resistor in series.

[0026] One end of the sixth resistor away from the fifth resistor is connected to the radio frequency signal output terminal, one end of the fifth resistor away from the sixth resistor is connected to the gate of the second field effect transistor, the source of the second field effect transistor is grounded, and the drain of the second field effect transistor is connected to the gate of the first field effect transistor.

[0027] The gate of the first field effect transistor is connected between the second resistor and the gate of the fourth field effect transistor, the source of the first field effect transistor is connected between the fourth resistor and the fourth field effect transistor, and the source of the first field effect transistor is grounded through the third resistor.

[0028] Preferably, the bias circuit module comprises a first field effect transistor, a second field effect transistor, a first resistor, a second resistor, a fourth resistor, a fifth resistor, a sixth resistor, a fourth field effect transistor and a fifth field effect transistor; wherein,

[0029] The second resistor, the fifth field effect tube and the fourth resistor are connected in series, the gate of the fifth field effect tube is connected with one end of the second resistor, and the drain and the source of the fifth field effect tube are connected with the fourth resistor; one end of the second resistor away from the fifth field effect tube is connected to the first power supply end, and one end of the fourth resistor away from the fifth field effect tube is connected between the fifth resistor and the sixth resistor in series;

[0030] One end of the sixth resistor away from the fifth resistor is connected with the radio frequency signal output end; one end of the fifth resistor away from the sixth resistor is connected with the gate of the second field effect tube, the source of the second field effect tube is grounded, and the drain of the second field effect tube is connected with the gate of the first field effect tube;

[0031] The gate of the first field effect tube is connected between the second resistor and the gate of the fifth resistor, the source of the first field effect tube is connected between the fourth resistor and the fifth field effect tube, and the source of the first field effect tube is grounded through the fourth field effect tube;

[0032] The gate of the fourth field effect tube is connected with the source of the first field effect tube, and the drain and the source of the fourth field effect tube are grounded.

[0033] The low-power high-power low-noise amplifier circuit based on gain expansion effect in the embodiment of the application adopts the bias circuit with gain expansion effect, the output power linearly increases with the increase of the input power due to the gain expansion effect, thereby the output 1dB compression point is improved. The radio frequency signal enters from the radio frequency signal input end, is amplified by the amplifier module, and is finally output from the radio frequency signal output end. The bias circuit module with gain expansion effect provides bias for the amplifier module, so that the low-power performance of the circuit is ensured while the high output 1dB compression point is provided compared with the prior art. BRIEF DESCRIPTION OF DRAWINGS

[0034] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and serve to explain the principles of the application. In the drawings:

[0035] Figure 1 It is a schematic diagram of the low-power high-power low-noise amplifier circuit based on gain expansion effect of the application;

[0036] Figure 2 It is a circuit diagram of the specific embodiment one of the bias circuit module of the application;

[0037] Figure 3 It is a circuit diagram of the specific embodiment two of the bias circuit module of the application;

[0038] Figure 4 It is a circuit diagram of the specific embodiment three of the bias circuit module of the application;

[0039] Figure 5 Circuit diagram for the fourth embodiment of the bias circuit module of the present application;

[0040] Figure 6 Effect diagram of the present application - gate voltage vgg curve under different input power;

[0041] Figure 7 Effect diagram of the present application - gate current idd curve under different input power;

[0042] Figure 8 Effect diagram of the present application - output power RFout curve under different input power.

[0043] Reference signs:

[0044] 1 - bias circuit module, 2 - amplifier module, 3 - feedback circuit module;

[0045] IN - radio frequency signal input end, OUT - radio frequency signal output end, Vb - first power supply end, VD - second power supply end, M1 - first field effect tube, M2 - second field effect tube, M3 - third field effect tube, M4 - fourth field effect tube, M5 - fifth field effect tube, R1 - first resistor, R2 - second resistor, R3 - third resistor, R4 - fourth resistor, R5 - fifth resistor, R6 - sixth resistor, R7 - seventh resistor, R8 - eighth resistor, C1 - first capacitor, L1 - load inductance. DETAILED DESCRIPTION

[0046] In order to make the personnel in the art better understand the present application scheme, the technical scheme in the embodiments of the present application will be described clearly and completely below in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by the person skilled in the art without creative labor should belong to the scope of protection of the present application.

[0047] It should be noted that the terms "first", "second", and the like in the description and in the claims of the present application and the above-described drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the application described herein can be implemented in an order other than that illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to only those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0048] According to an embodiment of the present application, a low-power high-power low-noise amplifier circuit based on gain expansion effect is provided, referring to Figure 1 and Figure 2 , comprising:

[0049] A radio frequency signal input end IN for inputting a radio frequency signal;

[0050] An amplifier module 2 connected with the radio frequency signal input end IN for amplifying the radio frequency signal;

[0051] A radio frequency signal output end OUT connected with the amplifier module 2 for outputting the amplified radio frequency signal;

[0052] A bias circuit module 1 connected with the radio frequency signal output end OUT and the amplifier module 2 respectively for making the working state of the amplifier circuit module at a preset static bias point.

[0053] Specifically, the present application adopts a low-power high-power low-noise amplifier circuit based on gain expansion technology, which includes an amplifier module 2, a bias circuit module 1, a feedback circuit module 3, and a load inductor L1. The radio frequency signal enters from the radio frequency signal input end IN, is amplified by the amplifier module 2, and is output from the radio frequency signal output end OUT. The bias circuit module 1 is connected with the feedback circuit module 3 through the sixth resistor R6 and provides bias for the amplifier module 2 through the seventh resistor R7.

[0054] The present application adopts a bias circuit with gain expansion effect, and the output power increases linearly with the increase of the input power due to the gain expansion effect, thereby improving the output 1dB compression point. Among them, the radio frequency signal enters from the radio frequency signal input end IN, is amplified and processed by the amplifier module 2, and is finally output from the radio frequency signal output end OUT. The bias circuit module 1 with gain expansion effect provides bias for the amplifier module 2, so that the present application, compared with the prior art, not only provides high output 1dB compression point, but also guarantees the low-power performance of the circuit.

[0055] In an embodiment, referring to Figure 1 and Figure 2 , the low-power high-power low-noise amplifier circuit further comprises:

[0056] A first power supply terminal Vb is connected with the bias circuit module 1 and the amplifier module 2, and is used to supply power for the low-power high-power low-noise amplifier circuit.

[0057] The static bias point of the low-power high-power low-noise amplifier circuit is provided by the bias circuit module 1. The voltage of the bias circuit module 1 is provided by the first power supply terminal Vb, and the power supply voltage of the amplifier module 2 is provided by the second power supply terminal VD.

[0058] Further, the amplifier module 2 is provided as a third field effect transistor M3, wherein the bias circuit module 1 is connected with a feedback circuit module 3, and the feedback circuit module 3 is connected with the radio frequency signal output terminal OUT and the amplifier module 2 respectively.

[0059] Specifically, the bias circuit module 1 is connected with the radio frequency signal output terminal OUT through the feedback circuit module 3. The feedback circuit module 3 comprises a seventh resistor R7 and a first capacitor C1, one end of the seventh resistor R7 is connected with one end of the first capacitor C1 and with one end of the sixth resistor R6 away from the fifth resistor R5, the other end of the seventh resistor R7 is connected with the radio frequency signal input terminal IN; the other end of the first capacitor C1 is connected with the radio frequency signal output terminal OUT.

[0060] In an embodiment, referring to Figure 1 and Figure 2 , the bias circuit module 1 is connected with the radio frequency signal output terminal OUT through the feedback circuit module 3.

[0061] Specifically, the feedback circuit module 3 comprises a seventh resistor R7 and a first capacitor C1, one end of the seventh resistor R7 is connected with one end of the first capacitor C1 and with the bias circuit module 1, the other end of the seventh resistor R7 is connected with the radio frequency signal input terminal IN; the other end of the first capacitor C1 is connected with the radio frequency signal output terminal OUT.

[0062] The feedback circuit module 3 is composed of the seventh resistor R7 and the first capacitor C1 in series, wherein point B is connected with the gate G3 of the third field effect transistor M3, and point A is connected with the output terminal of the bias circuit module 1, i.e. one end of the sixth resistor R6 away from the fifth resistor R5.

[0063] In an embodiment, referring to Figure 1 and Figure 2The low-power high-power low-noise amplifier circuit further comprises a second power supply end VD, one end of a load inductor L1 is connected to the second power supply end VD, and the other end of the load inductor L1 is connected to the amplifier module 2, one end of the first capacitor C1 away from the sixth resistor R6, and the radio frequency signal output end OUT respectively.

[0064] Further, the drain of the third field effect transistor M3 is connected to the load inductor L1, the gate of the third field effect transistor M3 is connected to the radio frequency signal input end IN and one end of the seventh resistor R7 away from the first capacitor C1 respectively, and the source of the third field effect transistor M3 is grounded.

[0065] The source of the third field effect transistor M3 is grounded, and the gate is connected to MN-in and one end of the seventh resistor R7 respectively, wherein MN-in is an input matching circuit, and MN-out is an output matching circuit.

[0066] Figure 6 FIG. 1 is a graph of the gate voltage vgg curve under different input powers for the effect of the present application; Figure 7 FIG. 2 is a graph of the gate current idd curve under different input powers for the effect of the present application; Figure 8 FIG. 3 is a graph of the output power RFout curve under different input powers for the effect of the present application.

[0067] Reference Figures 2 to 5 The following provides several specific embodiments of the bias circuit of the present application:

[0068] Specific embodiment one, reference Figure 2 The bias circuit module 1 comprises a first field effect transistor M1, a second field effect transistor M2, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, and an eighth resistor R8; wherein,

[0069] The second resistor R2, the third resistor R3, and the fourth resistor R4 are connected in series, one end of the second resistor R2 away from the third resistor R3 is connected to the first power supply end Vb, and one end of the fourth resistor R4 away from the third resistor R3 is connected between the fifth resistor R5 and the sixth resistor R6 in series;

[0070] One end of the sixth resistor R6 away from the fifth resistor R5 is connected to the radio frequency signal output end OUT; one end of the fifth resistor R5 away from the sixth resistor R6 is connected to the gate of the second field effect transistor M2, the source of the second field effect transistor M2 is grounded, and the drain of the second field effect transistor M2 is connected to the gate of the first field effect transistor M1;

[0071] The gate of the first field effect transistor is connected between the second resistor R2 and the third resistor R3, the source of the first field effect transistor M1 is connected between the third resistor R3 and the fourth resistor R4, and the source of the first field effect transistor M1 is grounded through the eighth resistor R8, and the drain of the first field effect transistor M1 is connected with the first power terminal Vb and the end of the second resistor R2 away from the third resistor R3 through the first resistor R1 respectively.

[0072] Specific implementation two, refer to Figure 3 , the bias circuit module 1 includes the first field effect transistor M1, the second field effect transistor M2, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6 and the fourth field effect transistor M4;Wherein,

[0073] The second resistor R2, the third resistor R3 and the fourth resistor R4 are connected in series, the end of the second resistor R2 away from the third resistor R3 is connected to the first power terminal Vb, and the end of the fourth resistor R4 away from the third resistor R3 is connected between the fifth resistor R5 and the sixth resistor R6 connected in series;

[0074] The end of the sixth resistor R6 away from the fifth resistor R5 is connected with the radio frequency signal output terminal OUT;The end of the fifth resistor R5 away from the sixth resistor R6 is connected with the gate of the second field effect transistor M2, the source of the second field effect transistor M2 is grounded, and the drain of the second field effect transistor M2 is connected with the gate of the first field effect transistor M1;

[0075] The gate of the first field effect transistor is connected between the second resistor R2 and the third resistor R3, the source of the first field effect transistor M1 is connected between the third resistor R3 and the fourth resistor R4, and the source of the first field effect transistor M1 is connected with the gate of the fourth field effect transistor, the source and the drain of the fourth field effect transistor M4 are grounded, and the drain of the first field effect transistor M1 is connected with the first power terminal Vb and the end of the second resistor R2 away from the third resistor R3 through the first resistor R1 respectively.

[0076] Specific implementation three, refer to Figure 4 , the bias circuit module 1 includes the first field effect transistor M1, the second field effect transistor M2, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6 and the fourth field effect transistor M4;Wherein,

[0077] The second resistor R2, the fourth field effect transistor and the fourth resistor R4 are connected in series, the gate of the fourth field effect transistor M4 is connected with one end of the second resistor R2, and the source and the drain of the fourth field effect transistor M4 are connected with the fourth resistor R4;The end of the second resistor R2 away from the fourth field effect transistor is connected to the first power terminal Vb, and the end of the fourth resistor R4 away from the fourth field effect transistor is connected between the fifth resistor R5 and the sixth resistor R6 connected in series;

[0078] The sixth resistor R6 has one end away from the fifth resistor R5 connected to the radio frequency signal output terminal OUT; the fifth resistor R5 has one end away from the sixth resistor R6 connected to the gate of the second field effect transistor M2, the source of the second field effect transistor M2 is grounded, and the drain of the second field effect transistor M2 is connected to the gate of the first field effect transistor M1;

[0079] The gate of the first field effect transistor is connected between the second resistor R2 and the gate of the fourth field effect transistor, the source of the first field effect transistor M1 is connected between the fourth resistor R4 and the fourth field effect transistor, and the source of the first field effect transistor M1 is grounded through the third resistor R3.

[0080] Specific implementation four, referring to Figure 5 , the bias circuit module 1 includes the first field effect transistor M1, the second field effect transistor M2, the first resistor R1, the second resistor R2, the fourth resistor R4, the fifth resistor R5, the sixth resistor R6, the fourth field effect transistor and the fifth field effect transistor; wherein,

[0081] The second resistor R2, the fifth field effect transistor and the fourth resistor R4 are connected in series, the gate of the fifth field effect transistor is connected to one end of the second resistor R2, the drain and the source of the fifth field effect transistor are both connected to the fourth resistor R4; one end of the second resistor R2 away from the fifth field effect transistor is connected to the first power supply terminal Vb, and one end of the fourth resistor R4 away from the fifth field effect transistor is connected between the fifth resistor R5 and the sixth resistor R6 connected in series;

[0082] The sixth resistor R6 has one end away from the fifth resistor R5 connected to the radio frequency signal output terminal OUT; the fifth resistor R5 has one end away from the sixth resistor R6 connected to the gate of the second field effect transistor M2, the source of the second field effect transistor M2 is grounded, and the drain of the second field effect transistor M2 is connected to the gate of the first field effect transistor M1;

[0083] The gate of the first field effect transistor is connected between the second resistor R2 and the gate of the fifth field effect transistor R5, the source of the first field effect transistor M1 is connected between the fourth resistor R4 and the fifth field effect transistor, and the source of the first field effect transistor M1 is grounded through the fourth field effect transistor;

[0084] The gate of the fourth field effect transistor M4 is connected to the source of the first field effect transistor M1, and the drain and the source of the fourth field effect transistor M4 are both grounded.

[0085] The principle of the low noise amplifier using gain expansion technology is to use low voltage bias technology, so that the amplifier module 2 works at a lower static bias point. At this time, according to the nonlinear theory of voltage and current, the Taylor series expansion formula of the voltage or current output of the circuit is y=a1x+a2x 2 +a3x 3 +…, wherein, the output of the circuit is y, x 1, x 2 ,x 3 are the first, second, third order components of the circuit, a1 is the first order coefficient, i.e. the transconductance gm1, a2 is the second order coefficient, and a3 is the third order coefficient. According to the theory of Behzad Razavi's RF microelectronics, a3 is negative is gain compression, a3 is gain expansion. Most of the cases in the prior art are negative, a3 can be positive when the amplifier module 2 bias point is close to class C, at this time the gain expansion effect can be used to improve the output change with the input.

[0086] The above is only the preferred embodiment of the present application, it should be noted that for those skilled in the art, without departing from the principles of the present application, can make a number of improvements and refinements, these improvements and refinements should also be considered as the protection scope of the present application.

Claims

1. A low power high power low noise amplifier circuit based on gain expansion effect, characterized by, The application relates to a radio frequency signal input terminal for inputting a radio frequency signal; an amplifier module connected with the radio frequency signal input terminal and used for amplifying the radio frequency signal; a radio frequency signal output terminal connected with the amplifier module and used for outputting the amplified radio frequency signal; and a bias circuit module connected with the radio frequency signal output terminal and the amplifier module respectively and used for making the working state of the amplifier circuit module be at a preset static bias point. The bias circuit module comprises a first field effect tube, a second field effect tube, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and an eighth resistor; wherein the second resistor, the third resistor and the fourth resistor are connected in series, one end of the second resistor away from the third resistor is connected to a first power supply end, and one end of the fourth resistor away from the third resistor is connected between the fifth resistor and the sixth resistor connected in series; one end of the sixth resistor away from the fifth resistor is connected with the radio frequency signal output terminal through a first capacitor and an output matching circuit; one end of the fifth resistor away from the sixth resistor is connected with the gate of the second field effect tube, the source of the second field effect tube is grounded, and the drain of the second field effect tube is connected with the gate of the first field effect tube; the gate of the first field effect tube is connected between the second resistor and the third resistor, the source of the first field effect tube is connected between the third resistor and the fourth resistor, the source of the first field effect tube is grounded through the eighth resistor, and the drain of the first field effect tube is connected with the first power supply end and one end of the second resistor away from the third resistor through the first resistor. The application relates to a radio frequency signal input terminal for inputting a radio frequency signal; an amplifier module connected with the radio frequency signal input terminal and used for amplifying the radio frequency signal; a radio frequency signal output terminal connected with the amplifier module and used for outputting the amplified radio frequency signal; and a bias circuit module connected with the radio frequency signal output terminal and the amplifier module respectively and used for making the working state of the amplifier circuit module be at a preset static bias point. The bias circuit module comprises a first field effect tube, a second field effect tube, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and a fourth field effect tube; wherein the second resistor, the third resistor and the fourth resistor are connected in series, one end of the second resistor away from the third resistor is connected to a first power supply end, and one end of the fourth resistor away from the third resistor is connected between the fifth resistor and the sixth resistor connected in series; one end of the sixth resistor away from the fifth resistor is connected with the radio frequency signal output terminal through a first capacitor and an output matching circuit; one end of the fifth resistor away from the sixth resistor is connected with the gate of the second field effect tube, the source of the second field effect tube is grounded, and the drain of the second field effect tube is connected with the gate of the first field effect tube; ​ ​ ​ ​ ​ 2. A low power high power low noise amplifier circuit based on gain expansion effect, characterized by, ​ ​ ​ ​ ​ ​ ​ ​ The gate of the first field effect transistor is connected between the second resistor and the third resistor, the source of the first field effect transistor is connected between the third resistor and the fourth resistor, and the source of the first field effect transistor is connected with the gate of the fourth field effect transistor, the source and the drain of the fourth field effect transistor are both grounded, and the drain of the first field effect transistor is connected with the first power supply end and the end of the second resistor away from the third resistor through the first resistor.

3. A low power high power low noise amplifier circuit based on gain expansion effect, characterized by, It comprises: a radio frequency signal input end for inputting radio frequency signals; an amplifier module connected with the radio frequency signal input end for amplifying the radio frequency signals; a radio frequency signal output end connected with the amplifier module for outputting the amplified radio frequency signals; a bias circuit module connected with the radio frequency signal output end and the amplifier module respectively for making the working state of the amplifier circuit module be at a preset static bias point; the bias circuit module comprises a first field effect transistor, a second field effect transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a sixth resistor and a fourth field effect transistor; wherein, the second resistor, the fourth field effect transistor and the fourth resistor are connected in series, the gate of the fourth field effect transistor is connected with one end of the second resistor, the source and the drain of the fourth field effect transistor are both connected with the fourth resistor; one end of the second resistor away from the fourth field effect transistor is connected with a first power supply end, and one end of the fourth resistor away from the fourth field effect transistor is connected between the fifth resistor and the sixth resistor in series; one end of the sixth resistor away from the fifth resistor is connected with the radio frequency signal output end through a first capacitor and an output matching circuit; one end of the fifth resistor away from the sixth resistor is connected with the gate of the second field effect transistor, the source of the second field effect transistor is grounded, and the drain of the second field effect transistor is connected with the gate of the first field effect transistor; the gate of the first field effect transistor is connected between the second resistor and the gate of the fourth field effect transistor, the source of the first field effect transistor is connected between the fourth resistor and the fourth field effect transistor, and the source of the first field effect transistor is grounded through the third resistor.

4. A low power high power low noise amplifier circuit based on gain expansion effect, characterized by, It comprises: a radio frequency signal input end for inputting radio frequency signals; an amplifier module connected with the radio frequency signal input end for amplifying the radio frequency signals; a radio frequency signal output end connected with the amplifier module for outputting the amplified radio frequency signals; a bias circuit module connected with the radio frequency signal output end and the amplifier module respectively for making the working state of the amplifier circuit module be at a preset static bias point; the bias circuit module comprises a first field effect transistor, a second field effect transistor, a first resistor, a second resistor, a fourth resistor, a fifth resistor, a sixth resistor, a fourth field effect transistor and a fifth field effect transistor; wherein, The second resistor, the fifth field effect tube and the fourth resistor are connected in series, the gate of the fifth field effect tube is connected with one end of the second resistor, and the drain and the source of the fifth field effect tube are both connected with the fourth resistor; one end of the second resistor away from the fifth field effect tube is connected with a first power supply end, and one end of the fourth resistor away from the fifth field effect tube is connected between the fifth resistor and the sixth resistor in series connection; One end of the sixth resistor away from the fifth resistor is connected with the radio frequency signal output end through a first capacitor and an output matching circuit; one end of the fifth resistor away from the sixth resistor is connected with the gate of the second field effect tube, the source of the second field effect tube is grounded, and the drain of the second field effect tube is connected with the gate of the first field effect tube; The gate of the first field effect tube is connected between the gates of the second resistor and the fifth resistor, the source of the first field effect tube is connected between the fourth resistor and the fifth field effect tube, and the source of the first field effect tube is grounded through the fourth field effect tube; The gate of the fourth field effect tube is connected with the source of the first field effect tube, and the drain and the source of the fourth field effect tube are both grounded.

5. A low-power high-power low-noise amplifier circuit based on gain expansion effect according to any one of claims 1-4, characterized in that, The low-power high-power low-noise amplifier circuit further comprises: A first power supply end connected with the bias circuit module and the amplifier module for supplying power to the low-power high-power low-noise amplifier circuit.

6. A low-power high-power low-noise amplifier circuit based on gain expansion effect according to claim 5, characterized in that, The low-power high-power low-noise amplifier circuit further comprises a feedback circuit module, and the bias circuit module is connected with the radio frequency signal output end through the feedback circuit module.

7. A low-power high-power low-noise amplifier circuit based on gain expansion effect according to claim 6, characterized in that, The feedback circuit module comprises a seventh resistor and a first capacitor, one end of the seventh resistor is connected with one end of the first capacitor and the bias circuit module, and the other end of the seventh resistor is connected with the radio frequency signal input end; the other end of the first capacitor is connected with the radio frequency signal output end.

8. A low-power high-power low-noise amplifier circuit based on gain expansion effect according to claim 7, characterized in that, The low-power high-power low-noise amplifier circuit further comprises a load inductor and a second power supply end, one end of the load inductor is connected with the second power supply end, and the other end of the load inductor is respectively connected with one end of the amplifier module, the first capacitor away from the bias circuit module and the radio frequency signal output end.

9. A low-power high-power low-noise amplifier circuit based on gain expansion effect according to claim 8, characterized in that, The amplifier module is a third field effect tube, the drain of the third field effect tube is connected with the load inductor, the gate of the third field effect tube is respectively connected with the radio frequency signal input end and one end of the seventh resistor away from the first capacitor, and the source of the third field effect tube is grounded.

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