Impedance matching method, plasma device, electronic device, and storage medium

Abstract

The application discloses an impedance matching method, a plasma device, an electronic device and a storage medium. The method is applied to a plasma device including a radio frequency source. The radio frequency source alternately works in a high level mode and a low level mode. The method comprises the following steps: in the case that the radio frequency source works in the high level mode, controlling the radio frequency source to output power in a first power output mode; in the case that the radio frequency source works in the low level mode, controlling the radio frequency source to output power in a second power output mode; wherein the first power output mode is a forward power mode or a load power mode, the second power output mode is a load power mode or a forward power mode, and the first power output mode is different from the second power output mode. The embodiment realizes the stability of the plasma.

Description

Technical Field

[0001] This application belongs to the field of plasma technology, specifically relating to an impedance matching method, plasma equipment, electronic equipment, and storage medium. Background Technology

[0002] Traditional etching equipment outputs a sinusoidal continuous wave from its radio frequency (RF) source. With the further development of integrated circuits, existing technologies are no longer sufficient to meet the requirements of etching processes at 20nm and below. The application of pulsed plasma technology has achieved a breakthrough in miniaturization. Pulsed plasma technology reduces plasma-induced damage (PID) caused by continuous wave RF energy, improves the loading effect in the etching process, significantly increases etching selectivity, and expands the means and window for process control.

[0003] During radio frequency (RF) energy transfer, the output impedance of the RF source is typically 50 ohms, while the input impedance of the reaction chamber is generally a non-50-ohm impedance value with both real and imaginary parts. Therefore, if energy is directly transferred to the reaction chamber, impedance mismatch in the transmission path may cause RF energy reflection, preventing proper plasma excitation within the reaction chamber. Thus, a matching converter needs to be connected between the RF source and the reaction chamber to ensure the input impedance at the RF source's downstream end is 50 ohms, facilitating proper energy transfer.

[0004] However, when the RF source switches between high-level and low-level modes, the impedance of the plasma is inconsistent in different pulse output modes. The matching device alone cannot cover the range of plasma impedance changes, which leads to plasma instability. Summary of the Invention

[0005] This application provides an impedance matching method, a plasma device, an electronic device, and a storage medium to solve the problem in related technologies where relying solely on a matching device cannot cover the range of plasma impedance variations, thus leading to plasma instability.

[0006] In a first aspect, embodiments of this application provide an impedance matching method applied to a plasma device, the plasma device including a radio frequency (RF) source, the RF source operating alternately in a high-level mode and a low-level mode, including:

[0007] When the radio frequency source is operating in the high-level mode, the radio frequency source is controlled to output power in the first power output mode;

[0008] When the radio frequency source is operating in the low-level mode, the radio frequency source is controlled to output power in the second power output mode;

[0009] The first power output mode is either a forward power mode or a load power mode, the second power output mode is either a load power mode or a forward power mode, and the first power output mode is different from the second power output mode.

[0010] Secondly, embodiments of this application also provide a plasma device, including a processor and a radio frequency source. The processor is configured to control the radio frequency source to output power in a first power output mode when it is determined that the radio frequency source is operating in a high-level mode, and to control the radio frequency source to output power in a second power output mode when it is determined that the radio frequency source is operating in a low-level mode.

[0011] The first power output mode is either a forward power mode or a load power mode, the second power output mode is either a load power mode or a forward power mode, and the first power output mode is different from the second power output mode.

[0012] Thirdly, embodiments of this application provide an electronic device including the processor, a memory, and a program or instructions stored in the memory and executable on the processor, wherein the program or instructions, when executed by the processor, implement the steps of the method described in the first aspect.

[0013] Fourthly, embodiments of this application provide a readable storage medium on which a program or instructions are stored, which, when executed by a processor, implement the steps of the method described in the first aspect.

[0014] The solution provided in this application embodiment controls the RF source to output power in a first power output mode when the RF source is operating in the high-level mode; and controls the RF source to output power in a second power output mode when the RF source is operating in the low-level mode. The first power output mode is either a forward power mode or a load power mode, and the second power output mode is either a load power mode or a forward power mode. The first power output mode is different from the second power output mode. This achieves the RF source outputting power in a forward power mode in the high-level mode and in a load power mode in the low-level mode, or vice versa. This allows the power output in the load power mode to quickly compensate for the reflected power fluctuations caused by the plasma impedance changes during the switching between high-level and low-level modes, thereby quickly compensating for plasma instability caused by reflected power fluctuations. This solves the problem in related technologies where relying solely on a matching device cannot avoid plasma instability caused by the switching between high-level and low-level modes. Attached Figure Description

[0015] Figure 1 This is a flowchart illustrating the impedance matching method in an embodiment of this application;

[0016] Figure 2 This is a pattern matching diagram of the radio frequency source within the same pulse period in the embodiments of this application;

[0017] Figure 3 This is a schematic diagram of the radio frequency source in an embodiment of this application;

[0018] Figure 4 This is a schematic diagram illustrating the effect of power compensation in an embodiment of this application;

[0019] Figure 5 This is a schematic diagram of the plasma device in an embodiment of this application;

[0020] Figure 6 This is a schematic diagram of the structure of the electronic device provided in the embodiments of this application. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0023] In related technologies, during pulsed plasma processes, when the pulsed power supply uses a pulse-to-pulse (level-level) output method, it simultaneously outputs high and low level signals (a high-level signal represents a high-level output, and a low-level signal represents a low-level output). The matching circuit adjusts its operation based on these signals. When the pulsed power supply outputs a high level signal, it simultaneously outputs a high-level signal. Upon receiving this signal, the matching circuit controls the internal motor to rotate for impedance matching. When the pulsed power supply outputs a low level signal, it simultaneously outputs a low-level signal. Upon receiving this signal, the matching circuit controls the internal motor to stop rotating, stopping at the position where the high level ended. Simultaneously, the pulsed power supply initiates a frequency sweep mode for matching during the low-level phase. When the power supply outputs a high level signal again, the RF power supply disables the frequency sweep and outputs a high-level signal. Upon receiving this signal again, the matching circuit controls the internal motor to resume impedance matching from its previous position. This cycle repeats until the pulsed power supply stops outputting, indicating the end of the process.

[0024] However, most power supplies lack frequency sweep technology, and a communication line is required between the RF power supply and the matching unit to receive the voltage level signal emitted by the power supply. Often, the matching unit lacks this interface to receive signals from the pulse power supply. Most importantly, the frequency sweep range of a pulse power supply is limited, typically ±5% of the center frequency. For example, a 13.56MHz power supply has a sweep range of 13.56MHz ±5%, which is insufficient to cover the range of plasma impedance variations, leading to mismatching.

[0025] To address the above problems, this application provides the following embodiments:

[0026] The impedance matching method provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0027] Figure 1 The diagram illustrates a flowchart of an impedance matching method according to an embodiment of the present invention. This method is applied to a plasma device, which includes a radio frequency (RF) source that alternately operates in a high-level mode and a low-level mode. The method includes the following steps:

[0028] Step 101: When the RF source is operating in the high-level mode, control the RF source to output power in the first power output mode; when the RF source is operating in the low-level mode, control the RF source to output power in the second power output mode.

[0029] Specifically, plasma equipment includes a radio frequency (RF) source, and of course, a plasma generation cavity connected to the RF source. The RF source provides a certain amount of RF power to generate a variable electric field in the plasma generation cavity. A certain vacuum level can be maintained in the plasma generation cavity, and the reactant gas introduced into it can be ionized under the influence of the variable electric field, thereby generating plasma.

[0030] Wherein, the first power output mode is either forward power mode or load power mode, and the second power output mode is either load power mode or forward power mode, and the first power output mode is different from the second power output mode. That is, the RF source outputs power in forward power mode in high-level mode and in load power mode in low-level mode, or outputs power in load power mode in high-level mode and in forward power mode in low-level mode.

[0031] Specifically, the internal parameters of the RF source can be set to adjust the power output mode in pulse output mode (high level-low level).

[0032] The forward power mode ensures that the output power of the RF source is equal to the set power, but there are reflections in both the RF transmission path and the plasma matching. In this case, the power absorbed by the plasma is less than the set power. For example, if the output power of the RF source is 100W, and the RF transmission path and plasma matching reflect 10W, the RF source still outputs 100W, then the plasma absorbs 90W.

[0033] Load mode ensures that the output power of the RF source minus the reflected power equals the set power, compensating for the reflection values ​​present in both the RF transmission path and plasma matching, thus stabilizing the plasma absorption power. Ultimately, the plasma impedance is stabilized through RF source power compensation adjustment. For example, assuming the RF source output power is 100W, the RF transmission path and plasma matching reflect 10W, and the RF source still outputs 110W, then the plasma absorption is 100W.

[0034] Thus, when the RF source operates in the high-level mode, it is controlled to output power using a first power output mode; when the RF source operates in the low-level mode, it is controlled to output power using a second power output mode. The first power output mode is either a forward power mode or a load power mode, and the second power output mode is either a load power mode or a forward power mode. The first power output mode is different from the second power output mode, thereby enabling the power in the load power mode to quickly compensate for the reflected power fluctuations caused by the plasma impedance changes due to the switching between high-level and low-level modes. This quickly compensates for the plasma instability caused by the reflected power fluctuations, solving the problem in related technologies where simply relying on a matching device cannot avoid plasma instability caused by the switching between high-level and low-level modes. Furthermore, the adjustment range is not limited by frequency sweep and can cover the range of plasma impedance changes.

[0035] Furthermore, in one embodiment, when the safety factor of the plasma device needs to be greater than a preset value, the first power output mode is a forward power mode and the second power output mode is a load power mode.

[0036] Specifically, plasma devices are difficult to ignite due to process conditions (such as gas type, pressure, and number of free electrons). In such cases, the reflected power is very high. If a load mode is used, the reflected power needs to be compensated, causing the plasma device's chamber to bear high power, which can lead to arcing in the transmission radio frequency components, creating a risk of arcing. Therefore, to ensure the safety of the plasma device, this embodiment, for example, requires that the safety factor of the plasma device be greater than a preset value. The first power output mode is a forward power mode, and the second power output mode is a load power mode, ensuring safe arcing in the high-level mode and preventing the risk of arcing.

[0037] Specifically, such as Figure 2 The diagram shows the matching state between the pulse output mode and the power output mode in this scenario. In this scenario, the RF source outputs power in the Forward mode in High level mode and in the Load mode in Low level mode. This allows the power in Load mode to quickly compensate for the reflected power fluctuation caused by the switching between High level mode and Low level mode, thereby solving the problem of plasma instability caused by reflected power fluctuation. It also enables safe ignition in High level mode without the risk of ignition.

[0038] Furthermore, in one embodiment, when the radio frequency source is operating in the high-level mode, the impedance value in the impedance matching device is adjusted to match the load impedance of the plasma device with the output impedance of the radio frequency source.

[0039] Specifically, when the radio frequency source is operating in high-level mode, the load impedance of the plasma device can be matched with the output impedance of the radio frequency source by adjusting the impedance value in the impedance matching device, thereby ensuring normal energy transmission.

[0040] Furthermore, in one embodiment, when the radio frequency source is operating in the low-level mode and outputting in Load mode, and the reflected power of the plasma device is greater than a preset ratio of the set power of the radio frequency source, the impedance value in the impedance matching device is adjusted so that the load impedance of the plasma device matches the output impedance of the radio frequency source.

[0041] Specifically, the exact value of the preset ratio can be set according to actual needs. As an example, the preset ratio can be 10%, but it can also be any value in the range of 8%-12%. There is no specific limitation on this here.

[0042] When the reflected power of the plasma device is greater than the preset ratio of the set power of the radio frequency source, that is, when the impedance of the plasma changes significantly, the load impedance of the plasma device and the output impedance of the radio frequency source can be matched by a matching device to ensure normal energy transmission.

[0043] It should be noted that this embodiment is applicable to the output of radio frequency sources in any frequency band. For example, in one embodiment, the frequency of the radio frequency source includes at least one of 400K, 2M, 13M, 40M and 60M.

[0044] Furthermore, it should be noted that, in one embodiment, the switching pulse period of the high-level mode and the low-level mode ranges from 0.1 kHz to 10 kHz, and the duty cycle of the high-level mode and the low-level mode varies from 10% to 90%.

[0045] Of course, the sum of the duty cycles of the high-level mode and the low-level mode is equal to 100%.

[0046] Furthermore, in one embodiment, such as Figure 3As shown, the radio frequency source includes a DC power supply VDD, a first inductor L1, a transistor Q, a bandpass filter module M, and a resistor R. The DC power supply VDD and the first inductor L1 are connected in series with the source of the transistor Q. The drain of the transistor Q is grounded, and the gate of the transistor Q is used to input an indication signal to control the switching on and off of the transistor. One end of the bandpass filter module M is connected between the source of the transistor Q and the first inductor L1, and the other end of the bandpass filter module M is connected to the resistor R.

[0047] In the Low level mode, the output power of the radio frequency source is controlled by the on / off time interval and the on / off time length of the transistor, and the output power keeps the power absorbed by the plasma in the plasma device constant.

[0048] It should be noted that, in one embodiment, the indication signal can be a square wave signal; wherein, the on / off time interval and the on / off time length of the transistor are controlled by the duty cycle of the indication signal, and the larger the duty cycle, the greater the output power.

[0049] Furthermore, the square wave signal has the same frequency as the sine wave signal output by the RF source, thus enabling the square wave signal controlling the transistor to match the output changes of the RF source. As an example, the square wave signal could be 13.56MHz, and the sine wave signal output by the RF source could also be 13.56MHz.

[0050] Additionally, in one embodiment, see also... Figure 3 The bandpass filter module M includes a first capacitor C1, a second capacitor C2, and a second inductor L2. The first capacitor C1 and the second inductor L2 are connected in parallel. The first capacitor C1 is connected between the source of the transistor Q and the first inductor L1. The second inductor L2 is connected to the resistor R. One end of the second capacitor C2 is connected between the source and the first inductor L1, and the other end of the second capacitor C2 is grounded.

[0051] Specifically, in Low-level mode, the RF source power output is adjusted by switching transistors on and off, with a response time on the order of microseconds. For example... Figure 3 As shown, when the transistor is turned on, VDD (DC voltage) stores energy in the first inductor L1. When the transistor is turned off, the first inductor L1 releases energy, which is filtered by the first capacitor C1 and the second inductor L2 (allowing the indicator signal to pass through) and the impedance is transformed to a preset value. Specifically, this preset value can be 50Ω.

[0052] Specifically, the second capacitor C2 can store energy, thereby maintaining the continuity of current when the transistor is off; the first capacitor C1 and the second inductor L2 constitute a bandpass filter, enabling a stable 13.56MHz sine wave to be output at the load end.

[0053] Furthermore, the output power of the RF source is controlled by the switching on and off of the transistors, specifically by an indicator signal. The duty cycle of the indicator signal controls the switching time interval and duration of the transistors, thus controlling the output power of the RF source. A larger duty cycle results in a larger output power, and different switching time intervals result in different output powers. In Load mode, when reflected power is present, the transistors can quickly provide feedback adjustment to increase the power output, ensuring stable plasma absorption power and relatively stable plasma impedance.

[0054] It should be noted that in Load mode, the transistor switches on and off as the reflected power changes, while in Forward mode, the transistor switching on and off does not change with the reflected power.

[0055] In addition, such as Figure 4 The diagram illustrates power compensation in scenarios where the RF source outputs in Forward mode in High-level mode and Load mode in Low-level mode. When the RF source switches between High-level and Low-level modes, if the matching circuit is insufficient to respond quickly to changes in plasma impedance, the reflected power of the plasma fluctuates, leading to plasma instability. By employing Load mode, the reflected power fluctuations caused by impedance changes can be compensated. Specifically, the RF source outputs an additional power based on the amount of power reflected by the plasma along the RF transmission path, ensuring that the power absorbed by the plasma remains constant, thus guaranteeing plasma stability. On a microscopic time scale, this means that the RF source can ensure stable plasma impedance in both High-level and Low-level modes. On a macroscopic time scale, this means that the plasma is stable throughout the process, and the reflected power meets the process requirements.

[0056] This embodiment enables the power in the load power mode to quickly compensate for the reflected power fluctuation caused by the change in plasma impedance due to the switching between high-level and low-level modes. This allows for rapid compensation of plasma instability caused by reflected power fluctuations, solving the problem in related technologies where relying solely on a matching device cannot avoid plasma instability caused by the switching between high-level and low-level modes. Furthermore, this embodiment does not require correlation control with other components, saving impedance matching costs.

[0057] like Figure 5The diagram shown is a structural schematic of the plasma device provided in this embodiment. The plasma device includes a processor 51 and a radio frequency source 52. The processor is used to control the radio frequency source to output power in a first power output mode when it is determined that the radio frequency source is operating in a high-level mode, and to control the radio frequency source to output power in a second power output mode when it is determined that the radio frequency source is operating in a low-level mode.

[0058] The first power output mode is either a forward power mode or a load power mode, the second power output mode is either a load power mode or a forward power mode, and the first power output mode is different from the second power output mode.

[0059] In one embodiment, the plasma device further includes a drive unit and an impedance matching device. When the radio frequency source is operating in the high-level mode, the processor is also configured to drive the drive unit to adjust the impedance value in the impedance matching device so that the load impedance of the plasma device matches the output impedance of the radio frequency source.

[0060] The plasma device provided in this application embodiment can achieve... Figure 1-4 The various processes implemented in the method implementation examples will not be described again here to avoid repetition.

[0061] It should be noted that the embodiments of plasma devices in this specification and the embodiments of radio frequency source control methods in this specification are based on the same inventive concept. Therefore, for specific implementation of the plasma device embodiments, please refer to the corresponding implementation of the radio frequency source control method embodiments mentioned above. Repeated descriptions will not be repeated.

[0062] The plasma device in this application embodiment can be an apparatus, or a component, integrated circuit, or chip in a terminal. The apparatus can be a mobile electronic device or a non-mobile electronic device. For example, mobile electronic devices can be mobile phones, tablets, laptops, PDAs, in-vehicle electronic devices, wearable devices, ultra-mobile personal computers (UMPCs), netbooks, or personal digital assistants (PDAs), etc., while non-mobile electronic devices can be servers, network attached storage (NAS), personal computers (PCs), televisions (TVs), ATMs, or self-service machines, etc. This application embodiment does not impose specific limitations.

[0063] The plasma device in this application embodiment can be a device with an operating system. This operating system can be Android, iOS, or other possible operating systems; this application embodiment does not specifically limit the specific operating system used.

[0064] Based on the same technical concept, embodiments of this application also provide an electronic device for executing the above-described radio frequency source control method. Figure 6 This is a schematic diagram of the structure of an electronic device to implement various embodiments of this application. The electronic device can vary significantly due to differences in configuration or performance, and may include a processor 610, a communications interface 620, a memory 630, and a communication bus 640. The processor 610, communications interface 620, and memory 630 communicate with each other via the communication bus 640. The processor 610 can call a computer program stored in the memory 630 and executable on the processor 610 to perform the following steps:

[0065] When the radio frequency source is operating in the high-level mode, the radio frequency source is controlled to output power in the first power output mode;

[0066] When the radio frequency source is operating in the low-level mode, the radio frequency source is controlled to output power in the second power output mode;

[0067] The first power output mode is either a forward power mode or a load power mode, the second power output mode is either a load power mode or a forward power mode, and the first power output mode is different from the second power output mode.

[0068] In one embodiment, when the safety factor of the plasma device needs to be greater than a preset value, the first power output mode is a forward power mode and the second power output mode is a load power mode.

[0069] In one embodiment, when the radio frequency source is operating in the high-level mode, the impedance value in the impedance matching device is adjusted to match the load impedance of the plasma device with the output impedance of the radio frequency source.

[0070] In one embodiment, when the radio frequency source is operating in the low-level mode and the reflected power of the plasma device is greater than a preset ratio of the set power of the radio frequency source, the impedance value in the impedance matching device is adjusted to match the load impedance of the plasma device and the output impedance of the radio frequency source.

[0071] In one embodiment, the switching pulse period of the high-level mode and the low-level mode ranges from 0.1 kHz to 10 kHz, and the duty cycle of the high-level mode and the low-level mode varies from 10% to 90%.

[0072] In one embodiment, the frequency of the radio frequency source includes at least one of 400K, 2M, 13M, 40M and 60M.

[0073] The specific execution steps can be found in the various steps of the above-described embodiment of the radio frequency source control method, and can achieve the same technical effect. To avoid repetition, they will not be described again here.

[0074] It should be noted that the electronic devices in the embodiments of this application include: servers, terminals, or other devices besides terminals.

[0075] The above electronic device structure does not constitute a limitation on the electronic device. An electronic device may include more or fewer components than illustrated, or combine certain components, or arrange them differently. For example, an input unit may include a Graphics Processing Unit (GPU) and a microphone, and a display unit may use a liquid crystal display (LCD), organic light-emitting diode (OLED), or other similar display panels. User input units include at least one of a touch panel and other input devices. A touch panel is also called a touchscreen. Other input devices may include, but are not limited to, physical keyboards, function keys (such as volume control buttons, power buttons, etc.), trackballs, mice, and joysticks, which will not be elaborated further here.

[0076] Memory can be used to store software programs and various data. Memory can primarily include a first storage area for storing programs or instructions and a second storage area for storing data. The first storage area can store the operating system, application programs or instructions required for at least one function (such as sound playback, image playback, etc.). Furthermore, memory can include volatile memory or non-volatile memory, or both. Non-volatile memory can be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. Volatile memory can be random access memory (RAM), static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous linked dynamic random access memory (Synchlink DRAM, SLDRAM), and direct memory bus RAM (DRRAM).

[0077] The processor may include one or more processing units; optionally, the processor integrates an application processor and a modem processor, wherein the application processor mainly handles operations related to the operating system, user interface, and applications, while the modem processor mainly handles wireless communication signals, such as a baseband processor. It is understood that the aforementioned modem processor may also not be integrated into the processor.

[0078] This application also provides a readable storage medium storing a program or instructions. When the program or instructions are executed by a processor, they implement the various processes of the above-described radio frequency source control method embodiments and achieve the same technical effects. To avoid repetition, they will not be described again here.

[0079] The processor is the processor in the electronic device described in the above embodiments. The readable storage medium includes computer-readable storage media, such as computer read-only memory (ROM), random access memory (RAM), magnetic disk, or optical disk.

[0080] It should be understood that the chip mentioned in the embodiments of this application may also be referred to as a system-on-a-chip, system chip, chip system, or system-on-a-chip, etc.

[0081] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. Furthermore, it should be noted that the scope of the methods and apparatuses in the embodiments of this application is not limited to performing functions in the order shown or discussed, but may also include performing functions substantially simultaneously or in the reverse order, depending on the functions involved. For example, the described methods may be performed in a different order than described, and various steps may be added, omitted, or combined. Additionally, features described with reference to certain examples may be combined in other examples.

[0082] Through the above description of the embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus necessary general-purpose hardware platforms. Of course, they can also be implemented by hardware, but in many cases the former is a better implementation method. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes several instructions to cause a terminal (which may be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in the various embodiments of this application.

[0083] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. An impedance matching method applied to a plasma device, the plasma device including a radio frequency (RF) source, the RF source operating alternately in a high-level mode and a low-level mode, characterized in that, include: When the radio frequency source is operating in the high-level mode, the radio frequency source is controlled to output power in the first power output mode; When the radio frequency source is operating in the low-level mode, the radio frequency source is controlled to output power in the second power output mode; Wherein, the first power output mode is either forward power mode or load power mode, the second power output mode is either load power mode or forward power mode, and the first power output mode is different from the second power output mode; The forward power mode refers to the output power of the RF source being equal to the set power, and the load power mode refers to the output power of the RF source minus the reflected power being equal to the set power.

2. The impedance matching method according to claim 1, characterized in that, When the safety factor of the plasma device needs to be greater than a preset value, the first power output mode is the forward power mode, and the second power output mode is the load power mode.

3. The impedance matching method according to claim 2, characterized in that, The impedance matching method further includes: When the radio frequency source is operating in the high-level mode, the impedance value in the impedance matching device is adjusted so that the load impedance of the plasma device matches the output impedance of the radio frequency source.

4. The impedance matching method according to claim 2, characterized in that, The impedance matching method further includes: When the radio frequency source is operating in the low-level mode and the reflected power of the plasma device is greater than a preset ratio of the set power of the radio frequency source, the impedance value in the impedance matching device is adjusted so that the load impedance of the plasma device and the output impedance of the radio frequency source are matched.

5. The impedance matching method according to claim 1, characterized in that, The switching pulse period of the high-level mode and the low-level mode ranges from 0.1kHz to 10kHz, and the duty cycle of the high-level mode and the low-level mode varies from 10% to 90%.

6. The impedance matching method according to claim 1, characterized in that, The frequency of the radio frequency source includes at least one of 400K, 2M, 13M, 40M and 60M.

7. A plasma device, characterized in that, The device includes a processor and an RF source. The processor is configured to control the RF source to output power in a first power output mode when it is determined that the RF source is operating in a high-level mode, and to control the RF source to output power in a second power output mode when it is determined that the RF source is operating in a low-level mode. Wherein, the first power output mode is either forward power mode or load power mode, the second power output mode is either load power mode or forward power mode, and the first power output mode is different from the second power output mode; The forward power mode refers to the output power of the RF source being equal to the set power, and the load power mode refers to the output power of the RF source minus the reflected power being equal to the set power.

8. The plasma device according to claim 7, characterized in that, It also includes a drive unit and an impedance matching device. When the radio frequency source is operating in the high-level mode, the processor is also used to drive the drive unit to adjust the impedance value in the impedance matching device so that the load impedance of the plasma device matches the output impedance of the radio frequency source.

9. An electronic device, characterized in that, It includes a processor, a memory, and a program or instructions stored in the memory and executable on the processor, wherein the program or instructions, when executed by the processor, implement the steps of the impedance matching method as described in any one of claims 1-6.

10. A readable storage medium, characterized in that, The readable storage medium stores a program or instructions that, when executed by a processor, implement the steps of the impedance matching method as described in any one of claims 1-6.

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