Method for aligning a microchip inductive device with a waveguide by reflected wave intensity measurement

Abstract

The application provides a method for aligning a microchip sensing device and a waveguide by measuring the intensity of reflected waves. Electromagnetic waves with different reflectivity on the sensing device and the chip structure adjacent to the sensing device are selected, and the electromagnetic waves are incident on the surface of the microchip through the waveguide. The position, angle and distance of the output port of the waveguide relative to the surface of the microchip are adjusted, so that the electromagnetic waves are vertically incident on the surface of the microchip and are reflected, and then re-enter the output port of the waveguide and propagate reversely in the waveguide. The method uses a waveguide element to separate the reflected waves from the incident waves, and measures the intensity of the reflected waves relative to the incident waves. By adjusting the horizontal position of the output port of the waveguide relative to the sensing device, and observing the jump of the intensity of the reflected waves when the incident area of the electromagnetic waves transitions from the sensing device to the chip structure adjacent to the sensing device, the boundary of the sensing device can be determined, and the electromagnetic waves output by the waveguide can be incident on the sensing device. The application can reduce the alignment cost and improve the signal coupling efficiency.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electromagnetic wave detection, and particularly relates to a method for aligning a microchip sensor device and a waveguide by measuring reflected wave intensity. BACKGROUND

[0002] Electromagnetic wave detection technology is applied in modern industry and daily life everywhere, covering a wide waveband from radio wave, microwave, to visible light, infrared light, and even high-energy rays such as X-ray and β-ray. According to Planck's principle, electromagnetic wave signals are composed of photons with energy proportional to frequency, so electromagnetic wave detection is also called photon detection. A large category of modern electromagnetic wave detection technology is realized by integrated photon sensor devices prepared on a microchip. The significant feature of these sensor devices is that their size can be very small, only microns or even smaller. In order to detect electromagnetic wave signals by using the sensor devices, the detected signals must be irradiated on the sensor devices. When the detected signals are transmitted by a waveguide, the sensor device and the waveguide must be aligned to ensure that the signals are irradiated on the sensor device and thus detected. In many application scenarios, the size of the waveguide transmitting the detected signals is also very small, for example, the core diameter of a single-mode optical fiber for transmitting near-infrared light signals is only about 9 microns. In these application scenarios, since both the sensor device and the waveguide have only micron size, how to accurately align them is a significant technical problem. In recent years, with the development of optical quantum detectors such as superconducting transition edge sensors, it is particularly important and urgent to solve the alignment problem, because the optical field detected by the optical quantum detector may contain only one or a few photons, and any photon loss in the measurement process will have a significant impact on the measurement result. Therefore, it is crucial to improve the detection efficiency of the sensor device, and the precondition is that the sensor device must be accurately aligned with the waveguide transmitting the detected electromagnetic wave signals, so that all the photons output by the waveguide fall on the sensor device, and any photons falling outside the sensor device will not be detected.

[0003] In order to solve the alignment problem of the photon sensor device and the waveguide transmitting the signals to improve the detection efficiency of the sensor device, a simple solution is to use visual alignment under a microscope.

[0004] In L. Lolli, E. Taralli, C. Portesi, D. Alberto, M. Rajteri, E. Monticone,

[0005] "Ti / Autransi transition-edgesensors coupled to single mode optical fibers aligned by Si V-groove", IEEE Trans. Appl. Supercond. 21 vol, 215-218 pages (2011) uses a V-groove made of silicon material to guide and fix the optical fiber, and then the position of the light spot output by the sensor device and the fiber is observed under a microscope, and the position of the microchip is moved until they are aligned. This method is simple and easy to implement, but because the microscope cannot be located directly above the fiber when viewed from the front of the microchip, it must be viewed from the side, and the parallax generated at this time limits its alignment accuracy. Another serious disadvantage of this method is that the output port of the fiber cannot be too close to the sensor device chip, otherwise the fiber cladding will block the sensor device and the light spot, making it impossible to observe and align under the microscope. In the aforementioned reference, the distance between the output port of the fiber and the surface of the sensor device microchip is more than 100 microns, and the consequence is that the signal from the fiber output has significant diffusion in the process of propagating to the surface of the microchip, so that the spot size of the signal is larger than the sensor device, and part of the photons cannot be illuminated on the sensor device, thereby causing photon loss and reducing the detection efficiency of the sensor device. In order to avoid the shortcomings of the above alignment scheme, other researchers have adopted a method that avoids observing from the front of the sensor device microchip. In D. Fukuda et al., "Titanium based transition-edge photon number resolving detector with 98% detection efficiency with index-matched small-gap fiber coupling," Opt. Express 19 vol, 870 pages (2011), an infrared light super mirror that can penetrate the substrate of the sensor device microchip is used, and the input fiber is then observed from the back of the microchip using an inverted infrared microscope to observe the image of the sensor device and the light spot output by the fiber, and the relative position of the fiber and the microchip is adjusted until the images of the two are superimposed to complete the alignment. This method avoids the parallax when viewed from the front, and the alignment accuracy is significantly improved. Moreover, when viewed from the back, the fiber will not block the sensor device and the light spot, so there is no minimum distance limitation between the output port of the fiber and the surface of the microchip, so that the distance can be adjusted to be very small to prevent the divergence of the light spot, effectively avoiding the illumination of the light spot to the area outside the sensor device, and improving its detection efficiency. However, this alignment method must use an inverted infrared microscope to observe from the back of the microchip under infrared light, and the dependence on this special imaging equipment limits the application range of this alignment method.In view of the various difficulties in the technical scheme of aligning the inductive device by observing the light spot output by the waveguide, a method called "self-alignment" is proposed in A. J. Miller, A. E. Lita, B. Calkins, I. Vayshenker, S. M. Gruber, S. W. Nam, "Compact cryogenic self-aligning fiber-to-detector coupling with losses below one percent", Opt. Express 19, article number 143645 (2011). In this scheme, the optical fiber is inserted into a commercial optical fiber sleeve assembly, the inner diameter of which is the same as the outer diameter of the optical fiber, and after the optical fiber is inserted, the fiber core is located at the center position of the sleeve. At the same time, by using the deep silicon etching process in semiconductors, the substrate around the inductive device and the inner diameter of the optical fiber sleeve are etched to the same size and shape, and the inductive device is removed from the microchip together with the substrate, and then placed in the optical fiber sleeve with the help of a carefully designed and manufactured support and fixing device. Since the inductive device is also located at the center position of the sleeve at this time, it is naturally aligned with the fiber core of the optical fiber inserted into the optical fiber sleeve. This method does not require visual observation of the positions of the inductive device and the optical fiber, and can achieve micron-level precision of the photolithography and etching process used in sample processing. However, in order to perform deep silicon etching process on the inductive device chip, an expensive deep silicon etching machine must be used, which not only has high process requirements, but also has a high cost of special gases and other consumables required during the process. In order to overcome these shortcomings, in P-S. Ma, H-F. Zhang, X. Zhou, "Fiber-sensor alignment based on surface microstructures", Opt. Express 31, 737-744 (2023), a method of aligning the inductive device and the waveguide by preparing an alignment structure that the waveguide can be inserted into on the surface of the microchip, and a limiting distance structure that controls the vertical distance from the waveguide output port to the inductive device, is proposed. This scheme only needs to use photolithography to prepare the appropriate photoresist into the alignment structure and the limiting distance structure, and does not involve other complex processes and expensive professional equipment, so the technical difficulty and implementation cost are greatly reduced. However, this scheme still requires the use of photolithography and other microelectronic processes, which involves professional fields and preparation processes beyond the scope of electromagnetic wave technology, and still has a certain technical threshold.

[0006] In summary, the existing alignment schemes have the disadvantages of high equipment requirements, great technical difficulty, and high implementation cost, and it is necessary to seek new methods with lower threshold, simple implementation, and low cost to more easily achieve accurate alignment of the inductive device and the waveguide and improve its detection efficiency. SUMMARY

[0007] To solve one or more of the above problems in the prior art alignment schemes, the present invention provides a method for aligning a microchip inductive device and a waveguide by measuring the intensity of reflected waves.

[0008] The method provided by the present invention selects a proper electromagnetic wave for the alignment operation, which can be a monochromatic wave with the same or different wavelength as the probing wavelength of the inductive device, or a complex wave composed of monochromatic waves with different wavelengths, but the electromagnetic wave should be able to propagate in the waveguide that transmits the probing signal, and its reflectivity on the material of the inductive device and the material of the area surrounding the inductive device must be different. The electromagnetic wave is vertically incident on the microchip of the inductive device through the output port of the waveguide, and after the electromagnetic wave is vertically reflected on the surface of the microchip of the inductive device, it re-enters the waveguide from the output port of the waveguide and propagates reversely in the waveguide. Further, an electromagnetic wave element is used to separate the reflected wave and the incident electromagnetic wave that propagate reversely in the waveguide, which can be an isolator or a circulator that allows only one-way propagation of electromagnetic waves, and its operating wavelength should cover the wavelength range of the electromagnetic wave used for the alignment operation. After the reflected wave and the incident electromagnetic wave are separated, a power meter is used to measure the intensity of the reflected wave relative to the incident electromagnetic wave, and the operating wavelength of the power meter should cover the wavelength range of the electromagnetic wave used for the alignment operation. Since the reflectivity of the electromagnetic wave on the inductive device and the material of the area surrounding the inductive device is different, it can be determined from the intensity of the reflected wave whether the reflected wave is reflected by the inductive device or the area surrounding the inductive device, and the inductive device and the waveguide are aligned by monitoring the intensity of the reflected wave when adjusting the relative position of the output port of the waveguide and the inductive device.

[0009] Further, the method provided by the present invention uses a positioning device to adjust the position, angle, and vertical distance of the output port of the waveguide relative to the surface of the microchip of the inductive device. The alignment device can fix the inductive device chip and only adjust the position and angle of the waveguide, or fix the waveguide and only adjust the position and angle of the inductive device chip. The position of the waveguide and the angle of the inductive device chip can be adjusted, or the angle of the waveguide and the position of the inductive device chip can be adjusted, or the position and angle of the waveguide and the inductive device can be adjusted simultaneously, and all these possibilities should be considered within the scope of the present invention. Using the positioning device, the output port of the waveguide and the surface of the inductive device chip are adjusted to be close enough and in a perpendicular direction to each other, so that after the electromagnetic wave is vertically incident on the surface of the inductive device chip and vertically reflected, it can re-couple reversely into the waveguide from the output port of the waveguide.

[0010] Further, the method provided by the present application adjusts the horizontal relative position of the waveguide output port and the sensing device, and measures the intensity of the reflected wave in the process. Since the electromagnetic wave output from the waveguide is vertically incident on the surface of the sensing device microchip, the light spot formed thereby has the same horizontal position relative to the sensing device as the waveguide output port. When the waveguide output port moves horizontally relative to the surface of the microchip, the light spot moves with the waveguide output port. Since the reflectivity of the electromagnetic wave is different in the sensing device and the surrounding area of the sensing device, the intensity of the reflected wave is different when the light spot is on the sensing device and outside the sensing device. Moreover, when the light spot moves from outside the sensing device to the sensing device, when the light spot crosses the boundary between the sensing device and other chip structures around the sensing device, the light spot will be partially on the sensing device and partially outside the sensing device, and the intensity of the reflected wave will gradually change from the value outside the sensing device to the value on the sensing device. By observing the jump in the intensity of the reflected wave, the boundary of the sensing device can be determined, and the waveguide output port is positioned to one side of the sensing device, thereby completing the alignment of the sensing device and the waveguide.

[0011] After the sensing device on the microchip and the waveguide output port are aligned by the method provided by the present application, in order to keep them in the aligned state, glue can be used between the waveguide output port and the sensing device and the surface of the microchip to stick the waveguide output port to the surface of the microchip, thereby fixing it in the position aligned with the sensing device. Glue can also be dropped on the surface of the microchip to cover the sensing device before alignment, and then the method provided by the present application is used to align the sensing device and the output port of the waveguide, and after the alignment process is completed, the output port of the waveguide is immersed in the glue.

[0012] Commonly used glue includes but is not limited to ultraviolet glue based on photosensitive resin, which is cured by irradiation of ultraviolet rays.

[0013] In summary, in order to overcome the shortcomings of the prior art solutions, such as dependence on special imaging equipment or advanced microfabrication processes, high technical difficulty, and high implementation cost, the present application provides a new method for accurately aligning an electromagnetic wave sensing device prepared on a microchip with a waveguide for transmitting an electromagnetic wave signal by measuring the intensity of a reflected wave, which only uses mature and reliable electromagnetic wave elements, and can align the electromagnetic wave sensing device on the microchip with the waveguide for propagating an electromagnetic wave signal through simple optical operation and intensity measurement. The sensing device includes but is not limited to a photonic or microwave detector based on semiconductor or superconducting materials, and the scope of application of the present application is not limited by the working principle of the sensing device.

[0014] Compared with the prior art, the method for aligning a microchip sensing device and a waveguide based on reflected wave intensity measurement provided by the present application has the following advantages:

[0015] 1. The requirement for equipment is greatly reduced compared with the prior art. The method provided by the present application only uses conventional electromagnetic wave devices such as circulators, power meters, displacement stages, tilt stages, etc., and does not involve special imaging equipment such as inverted infrared microscopes or high-end equipment such as deep silicon etching machines for microprocessing, which are relied on by the prior art alignment technology.

[0016] 2. The technical difficulty of the alignment operation is significantly reduced compared with the prior art. Unlike the prior art solution, the alignment method provided by the present application does not involve the operation of special imaging equipment or the use of professional microprocessing equipment, but only uses simple electromagnetic wave technology, including positioning the waveguide using a displacement stage, transmitting and coupling electromagnetic wave signals using a circulator, and measuring the intensity of reflected waves using a power meter. These mature and reliable electromagnetic wave basic technologies are widely used and well known to ordinary skilled persons in the field, so ordinary skilled persons in the field who master related technologies can complete the alignment of microchip sensing devices and waveguides using the method provided by the present application.

[0017] 3. The implementation cost is much lower than the prior art solution. The electromagnetic wave devices used in the method provided by the present application are inexpensive, much cheaper than the expensive special imaging equipment and professional microprocessing equipment relied on by the prior art. In the alignment process, no special process gas or other high-priced consumables are required, so the total implementation cost is much lower than the prior art solution. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 Fig. 1 is a schematic diagram of the sensing device microchip, optical fiber, circulator, power meter, and positioning device including a displacement stage and a tilt stage in an embodiment of the present application;

[0019] Figure 2 Fig. 2 is the intensity distribution of the optical field mode in a single-mode optical fiber in a plane perpendicular to the optical fiber axis, where w is the mode field radius of the single-mode optical fiber, and the origin of the xy plane is the optical fiber axis position, and the optical intensity is normalized to the intensity at the axis;

[0020] Figure 3 Fig. 3 is a graph showing the change of reflected wave intensity with the distance x between the center of the light spot of a single-mode optical fiber with a mode field radius w and the center of a square sensing device with a side length of 4w when the light spot is scanned along the center line of the sensing device, and (b) is a graph showing the change of reflected wave intensity with the horizontal distances x and y between the center of the light spot and the center of the sensing device in two perpendicular directions when the optical fiber is moved horizontally relative to the sensing device in any direction, where I is the reflected wave intensity, and I0 is the average value of the reflected wave intensity when the light spot is incident on the sensing device and the substrate, respectively. DETAILED DESCRIPTION

[0021] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments of the present application.

[0022] Figure 1 A schematic diagram of one embodiment of the method provided by the present application is shown, which aligns the sensing device on a microchip and the optical signal propagating in an optical waveguide, i.e. an optical fiber. In the diagram, 1 is a sensing device microchip, 11 is its substrate, which is a silicon nitride material, and 12 is a rectangular metal thin film sensing device prepared on the substrate, the uppermost layer of which is titanium. 2 is an optical fiber for transmitting the detected optical signal, which is of the type G.652D, and 21 is its core, i.e. the area where the optical signal propagates, the core diameter and the mode field diameter of which are about 9.2 microns, and the outer diameter of the cladding is 125 microns. 3 is an optical circulator, which has three ports 31, 32 and 33. Since the optical signal can only propagate in the optical circulator in an anticlockwise direction, the light input from the port 31 will be output from the port 32, and the light input from the port 32 will be output from the port 33, and then the optical intensity of the optical signal output from the port 33 is measured by a power meter 4. The port 32 of the optical circulator is connected to the optical fiber 2, and the optical signal input from the port 31 propagates in the optical circulator to the port 32, and then is coupled into the optical fiber 2 after being output from the optical circulator, and then propagates along the optical fiber, and is incident on the surface of the sensing device microchip 1 through the output port of the optical fiber 2. In Figure 1 In the shown embodiment, monochromatic laser of the wavelength of 1310 nm is selected to be input from the port 31 of the optical circulator, and the reflectivity of the light of the wavelength on the surface layer material titanium of the sensing device and the substrate material silicon nitride around the sensing device has a significant difference. Corresponding to the selected laser wavelength, Figure 1 The working wavelength of the optical circulator 3 in the shown embodiment is also 1310 nm, and the working wavelength range of the power meter 4 should cover 1310 nm. For the laser of 1310 nm, Figure 1 The G.652D optical fiber used in the shown embodiment is a single-mode optical fiber, and only the optical field of one spatial distribution mode can be coupled into the optical fiber and propagate in the optical fiber, which is approximately a Gaussian mode, and the half-width of the optical intensity of the Gaussian mode is the mode field diameter of the optical fiber. In Figure 2 In the shown embodiment, the optical intensity distribution of the mode in the vertical plane of the optical fiber is shown, from which it can be seen that the optical intensity distribution in the single-mode optical fiber is uniform along the circumferential direction of the optical fiber, and is concentrated in the center of the optical fiber along the radial direction, and the optical intensity rapidly decreases outward, and the energy of most of the light is distributed within the mode field diameter of the optical fiber. After the optical signal is coupled into the optical fiber 2 through the optical circulator, the light propagates in the optical fiber 2 without diffusion due to the limitation of the single-mode optical fiber, and still maintains the mode shown in Figure 2 the shown embodiment when reaching the output port of the optical fiber 2 facing the sensing device microchip. In Figure 1In the embodiment shown, the optical signal must be incident normal to the surface of the microchip 1 to be coupled back into the fiber 2 after reflection. In this embodiment, a positioning device 5 is used to achieve this. The positioning device includes a tilt stage 51 on which the sensor chip 1 is mounted. By adjusting the tilt stage 51, the output port of the microchip 1 and the fiber 2 can be brought to a mutual normal orientation. For the sake of convenience, the plane parallel to the surface of the microchip will be referred to as the xy-plane, and the direction in which the output port of the fiber 2 faces will be referred to as the z-direction. In addition to the tilt stage 51, the positioning device 5 includes a 3-axis or more axis translation stage 52. The fiber 2 is mounted on the translation stage 52, and by moving the translation stage 52 in the x, y, and z directions, the output port of the fiber 2 can be adjusted to the normal distance from the surface of the microchip 1, as well as the horizontal position of the output port relative to the sensor 12. When the optical signal travels from the output port of the fiber 2 to the sensor microchip, and after reflection from the surface of the microchip to the output port of the fiber 2, the beam can diverge due to the lack of confinement by the fiber, resulting in a larger spot size. If the reflected beam has a significant divergence when it reaches the output port of the fiber 2, i.e., the spot size is significantly larger than the mode field diameter of the fiber, then there will be a significant loss when the beam is coupled back into the fiber 2 from the opposite direction. Assuming the normal distance between the output port of the fiber 2 and the surface of the microchip 1 is d, the beam travels a distance of 2d in free space from the output port of the fiber 2 to the point where it is coupled back into the fiber 2. The degree of divergence of the beam during this process depends on the size of 2d relative to the Rayleigh length πw 2 / λ, where w is the mode field radius of the single mode fiber 2, and λ is the wavelength of the light. When 2d is much smaller than the Rayleigh length, the beam does not diverge significantly. For the fiber 2 in Figure 1 , w ~ 4.6 microns, and λ = 1310 nm, the corresponding Rayleigh length is about 50 microns. Therefore, by using the positioning device 52 to adjust the output port of the fiber 2 to be within 5 microns of the surface of the microchip 1 in the z-direction, the loss due to beam divergence can be avoided. At such close distances, the sensor 12 will be blocked by the fiber 2, since the cladding diameter of the fiber 2 is 125 microns, and the sensor 12 cannot be aligned by looking at it from the front of the microchip using a microscope. Instead, the reflected wave intensity must be measured.

[0023] In Figure 1In the embodiment shown, after the output port of the optical fiber 2 has been adjusted to be perpendicular to the microchip 1 and the distance between them is much smaller than the Rayleigh length, the light signal which is vertically incident on the surface of the microchip 1 and then vertically reflected will be coupled into the optical fiber 2 again and propagate in the fiber in the direction opposite to the incident wave until it enters the circulator through the port 32. Since the light signal can only propagate in the counterclockwise direction in the circulator 3, the reflected wave entering from the port 32 can only propagate to the port 33 for output, and its intensity can be measured by the power meter 4. At this time, the horizontal position of the output port of the optical fiber 2 relative to the sensing device is adjusted near the sensing device by moving the displacement stage 52 in the xy plane, and the change of the reflected wave intensity measured by the power meter 4 with the position of the optical fiber 2 is observed in the process. Since the reflectivity of the incident wave at the wavelength of 1310 nm on the sensing device and the silicon nitride substrate around the sensing device is significantly different, when the spot of the incident wave is completely illuminated on the sensing device, the reflected wave intensity measured by the power meter 4 will be significantly different from the reading when the spot is completely illuminated on the substrate around the sensing device. Furthermore, in the process of moving the horizontal position of the output port of the optical fiber 2 from the substrate outside the sensing device to the sensing device, when the spot of the light signal output by the optical fiber crosses the boundary between the sensing device 12 and the substrate around it, the reflected wave intensity measured by the power meter 4 will gradually change from the value when the spot is completely illuminated on the sensing device to the value when the spot is illuminated on the substrate around it. In Figure 3 In (a), the change of the reflected wave intensity with the distance between the center of the spot and the center of the sensing device is shown when the spot is scanned along the midline of the square sensing device, which represents the deviation of the alignment between the optical fiber and the sensing device. When the distance is small enough for the spot to be completely illuminated on the sensing device, they are in the state of alignment. From Figure 3 As can be seen in (a), when the spot crosses the boundary of the sensing device, there is a jump in the reflected wave intensity, and according to this jump, the position of the boundary of the sensing device can be determined. However, since the reflected wave intensity is gradually changing, there is an uncertainty in locating the boundary of the sensing device, and the size of this uncertainty is the width of the transition of the reflected wave intensity.

[0024] For the single-mode fiber mode shown in Figure 2 The width of the transition is about the mode field radius of the fiber. In Figure 3 In (b), the change of the reflected wave intensity is shown when the horizontal position of the output port of the optical fiber relative to the sensing device is arbitrarily adjusted in the xy plane by the displacement stage 52. At this time, the center of the spot and the center of the sensing device can be deviated in both directions, so Figure 3(b) is a function of the deviation in the two perpendicular directions. As can be seen from the figure, there is a jump in the reflected wave intensity measured by the power meter when the spot moves from on the sensing device to outside the sensing device across the boundary of the sensing device during the adjustment of the horizontal position of the optical fiber relative to the sensing device using the displacement stage 52. The position of the boundary of the sensing device can be determined by this jump. Inside its boundary, the reflected wave intensity hardly changes with the horizontal position of the optical fiber because the spot is almost completely reflected by the sensing device, and thus the reflected wave intensity is almost constant in the region inside the boundary of the sensing device. Figure 3 (b) is a function of the deviation in the two perpendicular directions. As can be seen from the figure, there is a jump in the reflected wave intensity measured by the power meter when the spot moves from on the sensing device to outside the sensing device across the boundary of the sensing device during the adjustment of the horizontal position of the optical fiber relative to the sensing device using the displacement stage 52. The position of the boundary of the sensing device can be determined by this jump. Inside its boundary, the reflected wave intensity hardly changes with the horizontal position of the optical fiber because the spot is almost completely reflected by the sensing device, and thus the reflected wave intensity is almost constant in the region inside the boundary of the sensing device.

[0025] In one embodiment of the alignment method provided by the present application, after the sensing device has been aligned with the waveguide, an ultraviolet glue based on photosensitive resin is dropped between the output port of the waveguide and the sensing device microchip, and then the glue is cured by irradiation with ultraviolet light, so as to fix the output port of the waveguide at the position aligned with the sensing device.

[0026] In another embodiment, an ultraviolet glue based on photosensitive resin is first dropped on the surface of the microchip, and then the sensing device is immersed in the glue, and the sensing device and the waveguide are aligned using the method provided by the present application, during which the output port of the waveguide is also immersed in the glue. After the alignment process is completed, the glue is cured by irradiation with ultraviolet light, so as to fix the output port of the waveguide at the position aligned with the sensing device.

[0027] The above embodiments are only used to illustrate the technical solutions of the present application, but not limit the present application; although the present application has been described in detail with reference to the foregoing embodiments, those ordinarily skilled in the art should understand that they can still make modifications to the technical solutions recorded in the foregoing embodiments, or make equivalent replacements to some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method of aligning a microchip inductive device with a waveguide by reflected wave intensity measurement, characterized by, comprising the steps of: inputting a monochromatic or polychromatic electromagnetic wave signal that can be transmitted in a waveguide into said waveguide and through an output port of said waveguide to be incident on the surface of said microchip, the reflectivity of the sensing device and other chip structures adjacent to said sensing device including the substrate and the leads to said sensing device should be different for said electromagnetic wave signal; adjusting the relative position, orientation, and vertical distance of said waveguide output port and said microchip using a positioning device so that the electromagnetic wave signal output from said waveguide is normally incident on and reflected from the surface of said microchip and returns to said waveguide and is back-transmitted in said waveguide; using a waveguide element to separate the reflected electromagnetic wave from the incident electromagnetic wave that is back-transmitted in said waveguide and measuring the intensity of the reflected electromagnetic wave using an electromagnetic wave power meter; adjusting the horizontal relative position of the waveguide output port and the sensing device in a direction parallel to the surface of said microchip using said positioning device, measuring the intensity of the reflected electromagnetic wave in this process, and observing the jump in the intensity of the reflected wave relative to the intensity of the incident wave when the incident range of the electromagnetic wave output from the waveguide on the surface of the microchip crosses the boundary between the sensing device and the other chip structures adjacent to it, thereby determining the boundary between the sensing device and the other chip structures adjacent to it; adjusting the horizontal relative position of the waveguide output port and the sensing device using said positioning device according to the boundary between the sensing device and the other chip structures adjacent to it that is determined above, so that the incident range of the electromagnetic wave output from the waveguide on the surface of the microchip is on the sensing device.

2. The method of aligning a microchip inductive device with a waveguide by measuring reflected wave intensity according to claim 1, wherein: The waveguide element used to separate the reflected electromagnetic wave from the incident wave is an electromagnetic wave isolator or an electromagnetic wave circulator.

3. The method of aligning a microchip inductive device with a waveguide by measuring reflected wave intensity according to claim 1, wherein: The electromagnetic wave is light, and the waveguide is an optical fiber.

4. The method of aligning a microchip inductive device with a waveguide by measuring reflected wave intensity according to claim 1, wherein: The waveguide element used to separate the reflected light from the incident light is an optical isolator or an optical circulator.

5. The method of aligning a microchip inductive device with a waveguide by measuring reflected wave intensity according to claim 1, wherein: The electromagnetic wave sensing device is a photonic or microwave detector based on semiconductor or superconducting materials.

6. The method of aligning a microchip inductive device with a waveguide by measuring reflected wave intensity according to claim 1, wherein: The electromagnetic wave sensing device is a superconducting transition edge sensor.

7. The method of aligning a microchip inductive device with a waveguide by measuring reflected wave intensity according to claim 1, wherein: The positioning device comprises at least one 3-axis or more-axis displacement stage for adjusting the vertical and horizontal positions of the waveguide output port relative to the microchip and the sensing device.

8. The method of aligning a microchip inductive device with a waveguide by measuring reflected wave intensity according to claim 1, wherein: The positioning device comprises at least one tilting stage for adjusting the angle of the waveguide output port relative to the surface of the microchip.

9. The method of aligning a microchip inductive device with a waveguide by measuring reflected wave intensity according to claim 1, wherein: It further comprises, after the alignment of the sensing device and the waveguide is completed, bonding the waveguide output port to the surface of the microchip at the position where the sensing device is aligned using glue.

10. A method of aligning a microchip inductive device with a waveguide by reflected wave intensity measurement, characterized by: comprising the steps of: dropping glue on the surface of the microchip to immerse the sensing device; aligning the sensing device and the waveguide using the method of any one of claims 1-9, and after the alignment is completed, the output port of the waveguide is also immersed in the glue; allowing the glue to solidify, thereby fixing the output port of the waveguide at the position where the sensing device is aligned on the surface of the microchip.

11. A method of aligning a microchip inductive device with a waveguide by measuring the intensity of a reflected wave as claimed in claim 9 or 10, characterized in that: The glue is ultraviolet light-sensitive glue, which is solidified by ultraviolet irradiation.

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