A method and device for adjusting phase bias point of an MZ silicon optical modulator

Abstract

The application provides a method and device for adjusting a phase bias point of a MZ silicon optical modulator, which is used for improving the accuracy of adjusting the phase bias point of the MZ silicon optical modulator. The method specifically comprises the following steps: applying different bias voltages to the MZ silicon optical modulator respectively, and obtaining at least one first voltage obtained at an output end of the MZ silicon optical modulator under the influence of the different bias voltages; the first voltage is used for indicating a voltage obtained when a light signal split to a photodetector at the output end is converted into an electric current and then flows through a sampling resistor; taking a maximum value in the at least one first voltage as a first threshold value; and adjusting the phase bias point of the MZ silicon optical modulator based on the first threshold value, so that the phase bias point is at a standard working point.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optical communication technology, in particular to a method and device for adjusting phase bias point of MZ silicon optical modulator. BACKGROUND

[0002] With the development of data center network, its power consumption is also rising year by year in the case of expanding scale. Reducing energy consumption has become one of the focuses of each data center, and the data communication optical module (hereinafter referred to as optical module) as one of the important components of fiber optical communication is also included in the scope of energy consumption control.

[0003] Traditional optical modules have large power consumption, and silicon photonics technology is currently widely recognized by the optical communication industry as the core technology of the next generation of optical communication devices and module systems, and is one of the most promising solutions to solve the problems of data center interconnection rate limitation, cost, and power consumption.

[0004] The silicon optical chip used by the optical module is one of the representatives of silicon photonics technology, which integrates spot size converter (SSC), waveguide (WG), direct coupled (DC) / multimode interference (MMI), Mach-Zehnder (MZ) silicon optical modulator, heater, photo-diode (PD) (also known as photodetector) and other devices, has the characteristics of low power consumption and high integration, and is one of the preferred devices for optical module power reduction and miniaturization.

[0005] Among them, the MZ silicon optical modulator included in the optical module needs to be externally biased with a direct current voltage to ensure that it works at a suitable operating point, that is, the value of the corresponding phase bias point of the MZ silicon optical modulator when working needs to be a preset value. For example, when the MZ silicon optical modulator works in intensity modulation mode, the phase bias point needs to be set to 90°, i.e. Quad point; when the MZ silicon optical modulator works in phase modulation mode, the phase bias point needs to be set to 180°, i.e. Null point. The phase bias point of the MZ silicon optical modulator when working will drift with the change of time, environmental temperature, external electric field, stress and other factors, causing the quality of the modulation signal to deteriorate and the bit error rate of the transmission system to rise. Therefore, in order to ensure that the MZ silicon optical modulator can work at its appropriate phase bias point, the phase bias point of the MZ silicon optical modulator when working needs to be adjusted in time.

[0006] Typically, the method for correcting the phase offset of an MZ silicon photonics modulator mainly involves judging the error between the phase offset and the standard operating point based on the input and output optical signals, and then adjusting the phase offset accordingly. Specifically, this involves judging the error based on the optical signals received by the PD at the input and output ends. However, this method of judging the phase offset of the MZ silicon photonics modulator has too low accuracy and cannot meet the requirements for adjusting the operating point of the MZ silicon photonics modulator. Summary of the Invention

[0007] This application provides an apparatus for adjusting the phase bias point of an MZ silicon photonic modulator, which improves the accuracy of the phase bias point adjustment of the MZ silicon photonic modulator.

[0008] In a first aspect, this application provides a method for adjusting the phase bias point of an MZ silicon photonic modulator. The method specifically includes: applying different bias voltages to the MZ silicon photonic modulator to obtain at least one first voltage at the output terminal of the MZ silicon photonic modulator under the influence of the different bias voltages; the first voltage is used to indicate the voltage obtained when the optical signal split at the output terminal onto the photodetector is converted into current and flows through a sampling resistor; the maximum value among the at least one first voltage is used as a first threshold; and the phase bias point of the MZ silicon photonic modulator is adjusted based on the first threshold so that the phase bias point is at a standard operating point.

[0009] In this scheme, the first voltage obtained from the output terminal is used as the criterion for determining the phase bias point of the MZ silicon photonic modulator. This avoids system errors caused by different detection devices. Furthermore, using the first voltage obtained from the output terminal to determine the phase bias point of the MZ silicon photonic modulator is closer to the true value corresponding to the device, and the determination result is more reliable. After determining the phase bias point of the MZ silicon photonic modulator based on the first voltage, the accuracy of the adjusted result is improved because the determination criterion is more reliable.

[0010] Optionally, the different bias voltages include bias voltages with different values ​​within a preset voltage range.

[0011] In this approach, a preset voltage range is set for the bias voltage, ensuring that the voltage input to the MZ silicon photonic modulator does not exceed the device's safe voltage range, thus improving the reliability of the solution. Simultaneously, using different bias voltage values ​​within this range maximizes the reliability of the subsequently obtained first voltage value, making it closer to the true value.

[0012] Optionally, the first threshold corresponding to the MZ silicon photonic modulator under different ambient temperatures is obtained; the correspondence between the different ambient temperatures and the first threshold is saved; based on the correspondence, a target first threshold corresponding to the ambient temperature of the MZ silicon photonic modulator in operation is determined; and the phase bias point of the MZ silicon photonic modulator in operation is adjusted based on the target first threshold.

[0013] In this approach, the relationship between ambient temperature and the standard operating point of the MZ silicon photonic modulator is obtained. Therefore, when adjusting the operating point of the MZ silicon photonic modulator, the target standard operating point corresponding to different ambient temperatures can be selected in a targeted manner. This can eliminate the influence of the phase offset point of the device caused by ambient temperature on the modulation operation of the MZ silicon photonic modulator, thereby improving the applicability of this solution.

[0014] Optionally, adjusting the phase bias point of the MZ silicon photonic modulator based on the first threshold includes: acquiring a second voltage at the output terminal of the MZ silicon photonic modulator in operation; comparing the second voltage with a target threshold to determine whether the error between the second voltage and the target threshold is less than a first preset error range; wherein the target threshold is the product of a preset coefficient and the first threshold; if the error between the second voltage and the target threshold is less than the first preset error range, then determining that the phase bias point of the MZ silicon photonic modulator in operation is at a standard operating point.

[0015] In this method, the second voltage obtained from the output terminal is compared with the target threshold to determine the error between the phase bias point and the standard operating point of the MZ silicon photonic modulator. This reduces the complexity of the comparison process and improves the accuracy of the operating point determination.

[0016] Optionally, it is determined that the error between the phase bias point and the standard operating point of the MZ silicon photonics modulator is greater than the first preset error range; a target difference value is obtained, wherein the target difference value is the difference between the second voltage and the target threshold; if the target difference value is determined to be positive, the bias voltage input to the MZ silicon photonics modulator is reduced so that the error between the phase bias point and the standard operating point of the MZ silicon photonics modulator is less than the first preset error range; or, if the target difference value is determined to be negative, the bias voltage input to the MZ silicon photonics modulator is increased so that the error between the phase bias point and the standard operating point of the MZ silicon photonics modulator is less than the first preset error range.

[0017] In this approach, the operating point of the MZ silicon photonic modulator is adjusted based on the adjusted second voltage at the output terminal, thereby achieving closed-loop control of the operating point of the MZ silicon photonic modulator and improving the reliability of the implementation of this scheme.

[0018] Optionally, adjusting the phase bias point of the MZ silicon photonics modulator based on the first threshold includes: determining the value of the bias voltage input to the MZ silicon photonics modulator; if the value of the bias voltage input to the MZ silicon photonics modulator is determined to be greater than a second threshold, then adjusting the value of the bias voltage to the second threshold; wherein the second threshold is greater than or equal to the bias voltage corresponding to the first threshold; or, if the value of the bias voltage input to the MZ silicon photonics modulator is determined to be less than a third threshold, then adjusting the value of the bias voltage to the third threshold; wherein the third threshold is less than or equal to the bias voltage corresponding to the first voltage with the smallest value.

[0019] In this approach, the bias voltage input to the MZ silicon photonic modulator is ensured to be within the normal range acceptable to the device, thus avoiding damage to the device caused by the device receiving voltages beyond its tolerance due to possible fault conditions.

[0020] Optionally, the value of the target bias voltage within the voltage range included by the second threshold and the third threshold is less than any other target bias voltage, wherein the target bias voltage is the bias voltage corresponding to the phase bias point of the MZ silicon photonic modulator when it is at the standard operating point.

[0021] In this approach, by limiting the range of the second and third thresholds, the bias voltage required for the MZ silicon photonic modulator to operate at the standard operating point is minimized. This method effectively reduces the energy consumption of the MZ silicon photonic modulator during operation.

[0022] Optionally, the MZ silicon photonic modulator includes at least two thermo-optical phase shifters, which are respectively disposed in the optical paths of the two arms of the MZ silicon photonic modulator. The thermo-optical phase shifters are used to modulate the phase bias point of the MZ silicon photonic modulator according to the received bias voltage. The method further includes: determining the bias voltage corresponding to the at least two thermo-optical phase shifters when the error between the phase bias point of the MZ silicon photonic modulator and the standard operating point is less than the first preset error range; determining the target thermo-optical phase shifter with the smallest bias voltage among the at least two thermo-optical phase shifters; and disabling other thermo-optical phase shifters among the at least two thermo-optical phase shifters except for the target thermo-optical phase shifter.

[0023] In this approach, switching between multiple thermo-optical phase shifters is achieved based on the corresponding bias voltage, ensuring that the activated thermo-optical phase shifter is the device with the lowest corresponding bias voltage, thereby reducing the power consumption of the MZ silicon photonic modulator.

[0024] Optionally, the output terminal of the MZ silicon photonic modulator includes at least two photodetectors, and the at least two photodetectors correspond one-to-one with at least two optical signals at the output terminal of the MZ silicon photonic modulator; the method further includes: acquiring at least two third voltages corresponding to the at least two photodetectors included in the output terminal of the MZ silicon photonic modulator; if the error between any two of the at least two third voltages is less than a second preset error range, then the phase bias point of the MZ silicon photonic modulator is determined to be at the standard operating point.

[0025] In this approach, the phase bias point of the MZ silicon photonic modulator is determined based on the third voltage corresponding to the two optical signals at the output end, which improves the flexibility of the implementation of this scheme.

[0026] Secondly, this application provides a phase bias point adjustment device for an MZ silicon photonic modulator. The device includes: a processing module, configured to apply different bias voltages to the MZ silicon photonic modulator respectively, and obtain at least one first voltage obtained at the output terminal of the MZ silicon photonic modulator under the influence of the different bias voltages; the first voltage is used to indicate the voltage obtained when the optical signal split at the output terminal onto the photodetector is converted into current and flows through the sampling resistor; the maximum value of the at least one first voltage is used as a first threshold; and an adjustment module, configured to adjust the phase bias point of the MZ silicon photonic modulator based on the first threshold, so that the phase bias point is at a standard operating point.

[0027] Optionally, the different bias voltages include bias voltages with different values ​​within a preset voltage range.

[0028] Optionally, the first threshold corresponding to the MZ silicon photonic modulator under different ambient temperatures is obtained; the correspondence between the different ambient temperatures and the first threshold is saved; a target first threshold corresponding to the ambient temperature of the MZ silicon photonic modulator in operation is determined based on the correspondence; the adjustment module is further configured to adjust the phase bias point of the MZ silicon photonic modulator in operation based on the target first threshold.

[0029] Optionally, when the adjustment module adjusts the phase bias point of the MZ silicon photonic modulator based on the first threshold, it is specifically used to: obtain the second voltage at the output terminal of the MZ silicon photonic modulator in operation; compare the second voltage with a target threshold, and determine whether the error between the second voltage and the target threshold is less than a first preset error range; wherein, the target threshold is the product of a preset coefficient and the first threshold; if the error between the second voltage and the target threshold is less than the first preset error range, then it is determined that the phase bias point of the MZ silicon photonic modulator in operation is at the standard operating point.

[0030] Optionally, the adjustment module is further configured to: determine that the error between the phase bias point of the MZ silicon photonics modulator and the standard operating point is greater than the first preset error range; obtain a target difference value, wherein the target difference value is the difference between the second voltage and the target threshold; if the target difference value is determined to be positive, decrease the bias voltage input to the MZ silicon photonics modulator so that the error between the phase bias point of the MZ silicon photonics modulator and the standard operating point is less than the first preset error range; or, if the target difference value is determined to be negative, increase the bias voltage input to the MZ silicon photonics modulator so that the error between the phase bias point of the MZ silicon photonics modulator and the standard operating point is less than the first preset error range.

[0031] Optionally, when the adjustment module adjusts the phase bias point of the MZ silicon photonics modulator based on the first threshold, it is specifically configured to: determine the value of the bias voltage input to the MZ silicon photonics modulator; if the value of the bias voltage input to the MZ silicon photonics modulator is determined to be greater than a second threshold, then adjust the value of the bias voltage to the second threshold; wherein the second threshold is greater than or equal to the bias voltage corresponding to the first threshold; or, if the value of the bias voltage input to the MZ silicon photonics modulator is determined to be less than a third threshold, then adjust the value of the bias voltage to the third threshold; wherein the third threshold is less than or equal to the bias voltage corresponding to the first voltage with the smallest value.

[0032] Optionally, the value of the target bias voltage within the voltage range included by the second threshold and the third threshold is less than any other target bias voltage, wherein the target bias voltage is the bias voltage corresponding to the phase bias point of the MZ silicon photonic modulator when it is at the standard operating point.

[0033] Optionally, the MZ silicon photonic modulator includes at least two thermo-optical phase shifters, which are respectively disposed in the two optical paths of the MZ silicon photonic modulator. The thermo-optical phase shifters are used to modulate the phase bias point of the MZ silicon photonic modulator according to the received bias voltage. The adjustment module is further configured to: determine the bias voltage corresponding to the at least two thermo-optical phase shifters when the error between the phase bias point of the MZ silicon photonic modulator and the standard operating point is less than the first preset error range; determine the target thermo-optical phase shifter with the smallest bias voltage among the at least two thermo-optical phase shifters; and disable other thermo-optical phase shifters among the at least two thermo-optical phase shifters except for the target thermo-optical phase shifter.

[0034] Optionally, the output terminal of the MZ silicon photonic modulator includes at least two photodetectors, and the at least two photodetectors correspond one-to-one with at least two optical signals at the output terminal of the MZ silicon photonic modulator; the adjustment module is further configured to: acquire at least two third voltages corresponding to the at least two photodetectors included in the output terminal of the MZ silicon photonic modulator; if the error between any two of the at least two third voltages is less than a second preset error range, then determine that the phase bias point of the MZ silicon photonic modulator is at the standard operating point.

[0035] Thirdly, this application provides an electronic device, including: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, and the at least one processor, by executing the instructions stored in the memory, causes the at least one processor to perform the method described in the first aspect or any optional embodiment of the first aspect.

[0036] Fourthly, this application provides a computer-readable storage medium for storing instructions that, when executed, cause a method as described in the first aspect or any optional embodiment of the first aspect to be implemented.

[0037] The technical effects or advantages of one or more technical solutions provided in the second, third and fourth aspects of this application can all be explained by the corresponding technical effects or advantages of one or more technical solutions provided in the first aspect. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 A schematic diagram of a possible MZ silicon photonic modulator provided in this application embodiment;

[0040] Figure 2 A flowchart illustrating a method for adjusting the phase bias point of an MZ silicon photonic modulator, provided in this application embodiment;

[0041] Figure 3 This is a control block diagram of the MZ silicon photonic modulator provided in an embodiment of this application;

[0042] Figure 4 A flowchart illustrating another method for adjusting the phase bias point of an MZ silicon photonic modulator provided in this application embodiment;

[0043] Figure 5 Another possible schematic diagram of an MZ silicon photonic modulator provided for embodiments of this application;

[0044] Figure 6 A flowchart illustrating a method for determining the phase bias point of an MZ silicon photonic modulator, provided in an embodiment of this application;

[0045] Figure 7 A schematic diagram of another possible MZ silicon photonic modulator provided for embodiments of this application;

[0046] Figure 8 A schematic diagram of another possible MZ silicon photonic modulator provided for embodiments of this application;

[0047] Figure 9 A schematic diagram of another possible MZ silicon photonic modulator provided for embodiments of this application;

[0048] Figure 10 A schematic diagram of the structure of an MZ silicon photonic modulator phase bias point adjustment device provided in this application embodiment;

[0049] Figure 11 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. Detailed Implementation

[0050] The technical solution of this application will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the embodiments and specific features in the embodiments are detailed descriptions of the technical solution of this application, rather than limitations thereof. In the absence of conflict, the embodiments and technical features in the embodiments can be combined with each other.

[0051] It should be understood that in the description of the embodiments of this application, terms such as "first" and "second" are used only for the purpose of distinguishing descriptions and should not be construed as indicating or implying relative importance, nor should they be construed as indicating or implying order. In the description of the embodiments of this application, "multiple" refers to two or more.

[0052] The term "and / or" in the embodiments of this application is merely a description of the association relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0053] See Figure 1This diagram illustrates a possible MZ silicon photonic modulator according to an embodiment of this application. The diagram includes devices such as a WG (Glass Window), PD (Digital Photonic Modulator), MMI (Mechanical Media Unit), modulator, and Heater. After entering the MZ silicon photonic modulator, the optical signal undergoes the required modulation through these devices. Specifically, the optical signal is modulated in the MZ silicon photonic modulator as follows:

[0054] like Figure 1 As shown, when the MZ silicon photonic modulator modulates the optical signal, the optical signal enters WG at the input end. In WG, a portion of the optical signal is split and sent to PD1 (the specific splitting value is set according to the actual situation of the device, and this application does not limit it. For ease of explanation, this application uses a 5% splitting as an example to describe the splitting process of the MZ silicon photonic modulator. Different values ​​can be used in actual use). The remaining light is split into two (50% each) by MMI and enters the two arms WG of the MZ silicon photonic modulator. There is a modulator on each of the two arms WG of the MZ silicon photonic modulator. There is also a Heater in the optical path of one arm. Under the action of the Heater, the optical signals in the two arms WG have a phase difference. The two optical signals with phase difference are combined into one of the output WGs after entering MMI at the output end. Then, 5% of the light is split to PD2, and the remaining light enters the optical fiber through WG. This represents the completion of the MZ silicon photonic modulator's modulation of the optical signal.

[0055] In the process of optical modulation using the MZ silicon photonics modulator described above, a crucial prerequisite is that the phase bias point of the operating MZ silicon photonics modulator is a preset value. This ensures that the MZ silicon photonics modulator can effectively and with high quality modulate the optical signal. It should be noted that the phase bias point of the operating MZ silicon photonics modulator is usually referred to as the operating point, and the operating point corresponding to the preset value mentioned above is the standard operating point.

[0056] However, the method of using the signals detected by PD2 and PD1 as the basis for judgment usually results in a lot of uncertainty, which makes the adjustment of the phase bias point of the MZ silicon photonic modulator less effective than expected.

[0057] Therefore, this application provides a method for adjusting the phase offset point of an MZ silicon photonic modulator, which abandons the common method of using the detection value obtained at the input terminal PD1 as the judgment basis, and instead chooses to use the detection value obtained at the output terminal PD2 as the judgment basis for the phase offset point. See Figure 2 The flowchart below shows a method for adjusting the phase bias point of an MZ silicon photonic modulator according to an embodiment of this application. The specific implementation steps of this method are as follows:

[0058] Step S201: Apply different bias voltages to the MZ silicon photonic modulator and obtain at least one first voltage at the output terminal of the MZ silicon photonic modulator under the influence of different bias voltages. The first voltage is used to indicate the voltage obtained when the optical signal split at the output terminal onto the photodetector PD is converted into current and flows through the sampling resistor.

[0059] Before detailing the above steps, it should be noted that the execution entity of this method can be a microcontroller unit (MCU) connected to the MZ silicon photonic modulator, such as... Figure 3 As shown, the MCU is connected to the Heater and PD in the MZ silicon photonic modulator so that the MCU can apply an offset voltage to the Heater and receive signals detected from the PD.

[0060] Therefore, for step S201, the specific implementation process can be that the MCU, through its connection with the Heater, applies different bias voltages to the MZ silicon photonic modulator, thereby obtaining at least one first voltage at the output terminal of the MZ silicon photonic modulator under the influence of different applied bias voltages. The acquisition of the first voltage is related to PD2 at the output terminal of the MZ silicon photonic modulator. PD refers to the aforementioned photodiode, also known as a photodetector. Its working principle is that when light shines on the PD, a current flows through the PD due to the photoelectric effect. Based on this principle, this embodiment utilizes the current flowing through the PD to pass through a sampling resistor. Thus, the voltage formed by the current generated by the PD flowing through the sampling resistor is the first voltage proposed in this application.

[0061] Optionally, when the MCU applies different bias voltages to the MZ silicon photonic modulator, the different bias voltages applied by the MCU include bias voltages with different values ​​within a preset voltage range. For example, the output step of the bias voltage can be appropriately adjusted within the preset voltage range according to the accuracy required for actual use, and different bias voltages can be applied to the MZ silicon photonic modulator in sequence.

[0062] In this method, by setting the bias voltage to different values ​​within a preset voltage range, it is ensured that the applied bias voltage will not exceed the maximum safe voltage of the device.

[0063] After obtaining at least one of the above-mentioned first voltages, the correspondence between the first voltages and the bias voltages applied to the device can be saved in different ways, such as text, tables, images, or characteristic curves.

[0064] The following uses the characteristic curve as an example to illustrate how the MCU acquires and saves at least one of the aforementioned first voltages and its correspondence with the bias voltage:

[0065] First, the MCU determines the numerical interval of the bias voltage based on the obtained preset voltage range and accuracy requirements. The preset voltage range and accuracy requirements can be either preset conditions directly stored in the MCU or calculated in real-time by the MCU based on the parameters of the MZ silicon photonic modulator device; this application does not impose any restrictions.

[0066] Secondly, when applying the bias voltage, the MCU applies a bias voltage starting from 0V to the Heater in the MZ silicon photonics modulator, increasing by a numerical interval each time. This increases the bias voltage from 0V up to the Heater's maximum safe operating voltage (typically 2.5V). Correspondingly, because the applied voltage to the Heater is constantly changing, the phase bias point of the MZ silicon photonics modulator changes accordingly, and the value of the first voltage at its output also changes. Therefore, each time the applied voltage to the Heater increases by a numerical interval, the MCU needs to simultaneously sample the first voltage at the output of the MZ silicon photonics modulator.

[0067] Next, by taking the bias voltage applied to the Heater as the X-axis and the first voltage obtained at the output of the MZ silicon photonic modulator as the Y-axis, the transmission characteristic curve of the MZ silicon photonic modulator can be obtained.

[0068] In summary, the MCU can obtain the transmission characteristic curve of the MZ silicon photonic modulator by scanning the relationship between the bias voltage applied to the Heater and the first voltage at the output of the MZ silicon photonic modulator. Then, the bias voltage applied to the Heater corresponding to the standard operating point of the MZ silicon photonic modulator can be obtained through the transmission characteristic curve.

[0069] After obtaining the first voltage of the MZ silicon photonic modulator under different bias voltages based on the above operations, the MCU can execute the following steps:

[0070] Step S202: Take the maximum value of at least one first voltage obtained above as the first threshold.

[0071] Let's take the transmission characteristic curve obtained above as an example to illustrate this step:

[0072] After obtaining the transmission characteristic curve corresponding to the MZ silicon photonic modulator, the MCU can determine the maximum value of the possible first voltage under the influence of different bias voltages from the transmission characteristic curve, and record it as the first threshold.

[0073] Furthermore, when multiple bias voltages can enable the MZ silicon photonic modulator to operate at the standard operating point, the bias voltage with the smallest value among the multiple bias voltages is selected as the operating voltage of the Heater to reduce the power consumption of the MZ silicon photonic modulator and thus save the power consumption of the device.

[0074] The above describes how the MCU scans the transmission characteristic curve of the MZ silicon photonic modulator to obtain the first threshold.

[0075] Furthermore, to conserve the MCU's computing power, the process of determining the first threshold can be pre-completed by the production debugging program, rather than by the MCU itself. The obtained first threshold is then directly written into the MCU as a characteristic parameter of the Heater. In this way, when the MCU subsequently adjusts the operating point of the MZ silicon photonics modulator, it can directly call the saved first threshold without consuming computing power, thus determining the transmission characteristic curve of the MZ silicon photonics modulator in real time.

[0076] Optionally, when adjusting the phase bias point of the MZ silicon photonics modulator, the ambient temperature corresponding to the operating MZ silicon photonics modulator can be included in the adjustment conditions, thereby improving the accuracy of the phase bias point adjustment. For example, the corresponding first threshold for the MZ silicon photonics modulator at different ambient temperatures can be determined in advance. In this way, when the MZ silicon photonics modulator is operating, the phase bias point of the MZ silicon photonics modulator can be adjusted more accurately based on its ambient temperature and the corresponding first threshold.

[0077] Specifically, the correspondence between ambient temperature and the first threshold corresponding to the MZ silicon photonic modulator can be determined using the following method:

[0078] First, the MZ silicon photonic modulator is placed under different ambient temperatures. The range and interval of these different ambient temperatures can be determined according to the user's accuracy requirements, and this application does not impose any restrictions. Second, at different ambient temperatures, the corresponding first threshold of the MZ silicon photonic modulator is recorded, thereby obtaining the correspondence between the ambient temperature and the first threshold.

[0079] Optionally, after obtaining the correspondence between the ambient temperature and the first threshold corresponding to the MZ silicon photonic modulator, the correspondence can be saved using tables, text, images, or characteristic curves, so that the MZ silicon photonic modulator can obtain the basis for adjusting the phase offset point more quickly when it is used.

[0080] When saving the above correspondence using a characteristic curve, the ambient temperature can be used as the X-axis and the first threshold as the Y-axis. The method for obtaining this characteristic curve can refer to the method used to obtain the transmission characteristic curve of the MZ silicon photonics modulator: the MZ silicon photonics modulator is subjected to different ambient temperatures, and the first threshold is determined, thereby obtaining the characteristic curve of the MZ silicon photonics modulator between ambient temperature and the first threshold. The specific implementation method can be found in the steps described above, and will not be repeated here.

[0081] The above describes different methods for obtaining the first threshold. After obtaining the first threshold, the MCU can adjust the phase bias point of the MZ silicon photonic modulator based on this first threshold, that is, complete the following steps:

[0082] Step S203: Adjust the phase bias point of the MZ silicon photonic modulator based on the first threshold so that the phase bias point is at the standard operating point.

[0083] In this scheme, the first voltage obtained from the output terminal is used as the criterion for determining the operating point of the MZ silicon photonic modulator, avoiding system errors caused by different detection devices. Furthermore, using the first voltage obtained from the output terminal to determine the operating point of the MZ silicon photonic modulator is closer to the actual value corresponding to the device, resulting in more reliable judgment. After determining the operating point based on the first voltage, the operating point of the MZ silicon photonic modulator is adjusted; because the criterion is more reliable, the accuracy of the adjusted result is improved.

[0084] Optionally, the MCU can adjust the operating point of the MZ silicon photonics modulator using methods such as... Figure 4 The method shown is complete. The specific steps of this method are as follows:

[0085] Step S401: Obtain the second voltage at the output terminal of the MZ silicon photonic modulator that is in operation.

[0086] The second voltage is similar to the first voltage; both are voltages generated when the current from the optical signal acquired by the output PD flows through the same sampling resistor. The difference is that the first voltage refers to the voltage sample value obtained from the output when acquiring the first threshold, while the second voltage refers to the voltage value obtained in real-time from the output by the MCU when the MZ silicon photonic modulator is working.

[0087] Step S402: Compare the second voltage with the target threshold to determine whether the error between the second voltage and the target threshold is less than a first preset error range; wherein the target threshold is the product of a preset coefficient and the first threshold. If yes, proceed to step S403; if no, proceed to step S404.

[0088] After obtaining the second voltage corresponding to the output terminal of the operating MZ silicon photonics modulator, the MCU needs to use this second voltage and the target threshold to determine whether the phase offset point of the MZ silicon photonics modulator is at the standard operating point. The preset coefficient for determining the target threshold can be set according to usage requirements and can include different values. For example, for an MZ silicon photonics modulator operating normally in intensity modulation mode, its phase offset point is 90°. At this time, the ratio of the detected second voltage to the maximum first voltage (i.e., the first threshold) is 0.5, so 0.5 can be used as one value for the preset coefficient. As another example, for an MZ silicon photonics modulator operating normally in phase modulation mode, its phase offset point is 180°. At this time, the ratio of the detected second voltage to the first threshold is 0, so 0 can be used as another value for the preset coefficient.

[0089] Based on this, when the MZ silicon photonic modulator is operating in intensity modulation mode, the preset coefficient can be set to 0.5; when the MZ silicon photonic modulator is operating in phase modulation mode, the preset coefficient can be set to 0; or, the preset coefficient can be directly set to include both 0 and 0.5 values, so that it is not necessary to determine the operating mode of the MZ silicon photonic modulator in advance and then determine its phase offset point, but directly determine whether the phase offset point of the MZ silicon photonic modulator is 90° or 180°.

[0090] Step S403: If it is determined that the error between the second voltage and the target threshold is less than the first preset error range, then it is determined that the phase bias point of the MZ silicon photonic modulator in operation is at the standard operating point.

[0091] The first preset error range can be set to different values ​​according to the user's accuracy requirements. For example, if higher accuracy is required, it can be set such that when the second voltage is equal to the target threshold, the phase bias point of the MZ silicon photonic modulator in operation is determined to be at the standard operating point, i.e., 90° or 180°.

[0092] For example, in practical applications, if there are other accuracy requirements, then the judgment can be made without strictly adhering to the requirement of being equal to the target threshold. Instead, a range that meets the requirements can be set. For example, the preset coefficient can be set to 0.5±0.05. In this way, it is only necessary to determine that the error between the second voltage and the target threshold is within the preset error range to determine that the phase bias point of the MZ silicon photonic modulator meets the requirements.

[0093] Step S404: If it is determined that the error between the phase bias point and the standard operating point of the MZ silicon photonic modulator is greater than the first preset error range, then obtain the target difference value obtained by subtracting the target threshold from the real-time detected second voltage, and determine whether the target difference value is positive. If yes, proceed to step S405; if no, proceed to step S406.

[0094] Step S405: If the target difference is determined to be positive, the bias voltage input to the MZ silicon photonic modulator is reduced so that the error between the phase bias point of the MZ silicon photonic modulator and the standard operating point is less than the first preset error range.

[0095] Step S406: If the target difference is determined to be negative, increase the bias voltage input to the MZ silicon photonic modulator so that the error between the phase bias point of the MZ silicon photonic modulator and the standard operating point is less than the first preset error range.

[0096] By adjusting the phase bias point of the MZ silicon photonic modulator in a closed loop as described above, it can be ensured that the phase bias point of the MZ silicon photonic modulator meets the usage requirements.

[0097] During the aforementioned closed-loop adjustment process, it is also necessary to limit the bias voltage applied to the MZ silicon photonics modulator during adjustment to prevent it from exceeding the safe voltage range acceptable to the MZ silicon photonics modulator. Specifically, the limitation of the bias voltage can be implemented as follows:

[0098] Optionally, when the MCU adjusts the bias voltage input to the MZ silicon photonic modulator, it is first necessary to determine the value of the bias voltage input to the MZ silicon photonic modulator.

[0099] If it is determined that the value of the bias voltage input to the MZ silicon photonic modulator is greater than the second threshold, then the value of the bias voltage is adjusted to the second threshold, wherein the second threshold is greater than or equal to the bias voltage corresponding to the first threshold.

[0100] If it is determined that the bias voltage input to the MZ silicon photonic modulator is less than the third threshold, the value of the bias voltage is adjusted to the third threshold, wherein the third threshold is less than or equal to the bias voltage corresponding to the first voltage with the smallest value.

[0101] In this way, the bias voltage input to the MZ silicon photonic modulator is limited between the second threshold and the third threshold, avoiding the danger of the bias voltage being too large and exceeding the safe voltage that the device can accept, or the problem of the bias voltage being too small and causing the device to malfunction.

[0102] In the above method, the second threshold can be directly the first threshold (i.e., the bias voltage corresponding to the largest first voltage), and the third threshold is the bias voltage corresponding to the smallest first voltage obtained when scanning the MZ silicon photonic modulation and making its transmission characteristic curve.

[0103] It should be understood that in the above method, when the bias voltage exceeds the range of the second and third thresholds, it indicates that the closed-loop control parameters are incorrect, the transmission characteristic curve scan of the MZ silicon photonic modulator is incorrect, or there is a hardware circuit malfunction. At this time, the MCU can issue an alarm to alert the user to the abnormal situation, facilitating subsequent troubleshooting.

[0104] Optionally, the range of the second and third thresholds can be further narrowed to include only one target bias voltage; wherein the target bias voltage can make the phase bias point of the MZ silicon photonic modulator at the standard operating point, and the value of the target bias voltage determined according to the range of the narrowed second and third thresholds is less than the value of any other target bias voltage.

[0105] In other words, the phase bias point of the MZ silicon photonics modulator can be limited during adjustment, ensuring that the input to the MZ silicon photonics modulator does not exceed a second threshold and is not lower than a third threshold. Furthermore, since there can be more than one bias voltage at the same standard operating point for the MZ silicon photonics modulator's phase bias point, to reduce the power consumption of the MZ silicon photonics modulator, the second and third thresholds can be further limited during phase bias point adjustment. This ensures that the voltage range corresponding to the second and third thresholds contains only one target bias voltage, and that this target bias voltage is the smallest among all target bias voltages.

[0106] For example, assuming that within the safe voltage range of the MZ silicon photonics modulator, 0.2V, 0.3V, and 0.35V may all result in the MZ silicon photonics modulator's phase bias point being at the standard operating point. In this case, the second threshold can be set to 0.25V, and the third threshold can be set to 0.15V. This way, the bias voltage input to the MZ silicon photonics modulator will only include the target bias voltage of 0.2V, which is the smallest among all target bias voltages and will ensure the MZ silicon photonics modulator's phase bias point is at the standard operating point.

[0107] The above introduces, for example Figure 1 The method for adjusting the operating point of the MZ silicon photonic modulator shown is described in detail. However, in reality, there are MZ silicon photonic modulators with slightly different structures. The following describes the method for adjusting the operating point of these slightly different MZ silicon photonic modulators.

[0108] See Figure 5 This is another possible schematic diagram of an MZ silicon photonic modulator provided in the embodiments of this application, in which... Figure 5In the MZ silicon photonic modulator shown, the multimode interferometer (MMI) at the output is a 2-input 2-output (2x2) MMI, meaning it simultaneously outputs two optical signals from two inputs. Correspondingly, this output also includes two photodetectors (PD2 and PD3), each corresponding one-to-one with the two output optical signals. Specifically, as shown... Figure 5 As shown, the input end and the two middle modulation optical paths are... Figure 1 The schematic diagrams shown are the same, except that the output end uses a 2X2MMI. Thus, there are two output optical paths at the output end. One WG will split 5% of the light to PD2, and the remaining optical signal of this optical path will enter the optical fiber as output light. The other WG will split 5% of the light to PD3.

[0109] It should be noted that, in cases such as Figure 5 In the schematic diagram shown, the output terminal only includes two optical paths and two corresponding photodetectors. However, in actual use, the MZ silicon photonic modulator may include more optical paths and corresponding photodetectors, which is not limited in this application.

[0110] Optional, in such Figure 5 When adjusting the operating point of the MZ silicon photonic modulator corresponding to the schematic diagram shown, the determination of the phase offset point of the MZ silicon photonic modulator can also be achieved by, for example... Figure 6 The method shown below has the following specific steps:

[0111] Step S601: Obtain at least two third voltages corresponding to at least two photodetectors included in the output terminal of the MZ silicon photonic modulator.

[0112] The third voltage is similar to the first and second voltages mentioned above; it is the voltage corresponding to the current flowing through the sampling resistor after the light signal collected by the photodetector is converted into current. The difference is that the third voltage refers to at least two voltages obtained from at least two photodetectors when there are at least two photodetectors at the output terminal.

[0113] Step S602: Determine whether the error between any two of the obtained third voltages is less than the second preset error range; if yes, determine that the phase bias point of the MZ silicon photonic modulator is at the standard operating point; if no, proceed to step S603.

[0114] The second preset error range is similar to the first preset error range and can be set differently according to the required accuracy. For example, when high accuracy is required, this error range can be set to 0, meaning that at least two third voltages must be equal. This ensures that the phase bias point of the MZ silicon photonic modulator meets the requirements, i.e., it is at the standard operating point. Alternatively, the error range can be set to fluctuate by 5% to...Figure 5 Taking the MZ silicon photonic modulator as an example, if the third voltage corresponding to PD2 is within 5% above and below the third voltage corresponding to PD3, it can be determined that the phase bias point of the MZ silicon photonic modulator is at the standard operating point.

[0115] Step S603: If it is determined that the phase bias point of the MZ silicon photonic modulator is not at the standard operating point, then the phase bias point of the MZ silicon photonic modulator is adjusted according to the error between each pair so that it operates at the standard operating point.

[0116] Similarly, as mentioned above Figure 5 The following explanation uses the MZ silicon photonic modulator as an example to illustrate this step. Figure 5 In this process, the third voltage corresponding to PD2 is denoted as PD2_ADC and the third voltage corresponding to PD3 is denoted as PD3_ADC. In this case, the difference obtained by subtracting PD3_ADC from PD2_ADC is taken as the target difference, and the sign of the target difference is judged. The adjustment method after the judgment is the same as the above steps S405 and S406. For details, please refer to these two steps, which will not be repeated here.

[0117] The above method provides another way to adjust the operating point of an MZ silicon photonic modulator with at least two optical signals at the output, thus improving the flexibility of this solution.

[0118] Optionally, some MZ silicon photonic modulators include at least two thermo-optical phase shifters (Heats). These Heaters are respectively positioned in the two optical arms of the MZ silicon photonic modulator and are used to adjust the phase bias point of the MZ silicon photonic modulator according to the received bias voltage. During normal operation, the MZ silicon photonic modulator will only select one of the Heaters to perform the phase biasing function. Which Heater is selected to perform the phase biasing operation can be determined using the following method:

[0119] First, determine the bias voltages corresponding to at least two Heaters included in the MZ silicon photonic modulator when the error between the phase bias point and the standard operating point of the MZ silicon photonic modulator is less than a first preset error range.

[0120] Then, the target Heater with the smallest bias voltage is determined from these at least two Heaters.

[0121] Next, disable all Heaters other than the target Heater among at least two Heaters included in the MZ silicon photonic modulator. In other words, the MZ silicon photonic modulator only enables the target Heater when it is working normally.

[0122] This application enables the switching of the Heater in the MZ silicon photonic modulator using this method, ensuring that the Heater with a lower operating voltage is enabled, thereby reducing the energy consumption required by the MZ silicon photonic modulator and saving power.

[0123] Optionally, when implementing the above-mentioned Heater switching function, a method similar to scanning the transmission characteristic curve of the MZ silicon photonic modulator can also be adopted. That is, the relationship between the bias voltage and the first voltage of each Heater included in the MZ silicon photonic modulator is scanned in advance, and the Heater with the lowest bias voltage when the first voltage is the maximum is determined. This information is used as a parameter configuration and directly saved to the MCU, thereby saving the computing power of the MCU and improving the efficiency of adjusting the phase bias point of the MZ silicon photonic modulator.

[0124] The above describes the specific implementation steps of the phase bias point adjustment method for MZ silicon photonic modulators provided in this application, as well as the implementation process of some optional schemes. It should be understood that this scheme is also applicable to some MZ silicon photonic modulators with different structures. The following describes how to determine the operating point (i.e., the phase bias point of the MZ silicon photonic modulator when it is working) for some MZ silicon photonic modulators with different structures.

[0125] Example 1, for example Figure 1 Determining the operating point of the MZ silicon photonic modulator shown.

[0126] like Figure 1 As shown, 5% of the light entering WG goes to PD1, and then is split in two by the MMI at the input end into the two arms WG of the MZ silicon photonic modulator. Each arm WG has a modulator, and one of the arms WG also has a heater. Under the action of the heater, a phase difference appears in the light between the two arms WG. After entering the MMI at the output end, the light from both arms WG is combined into a single WG, and then 5% of the light is split to PD2. Finally, the light from WG enters the optical fiber. The MCU collects the second voltage of PD2. When PD2 detects the second voltage target threshold, the phase bias point of the MZ silicon photonic modulator is determined to be the Quad point; or, when the second voltage detected by PD2 is zero, the phase bias point of the MZ silicon photonic modulator is determined to be the Null point.

[0127] Example 2, for example Figure 5 Determining the operating point of the MZ silicon photonic modulator shown.

[0128] like Figure 5As shown, 5% of the light entering the input WG is sent to PD1, and then split in two by the input MMI into the two arms WG of the MZ silicon photonic modulator. Each arm WG has a modulator, and one of the arms also has a Heater. Under the influence of the Heater, a phase difference appears in the light between the two arms WG. After the two arms WG enter the output 2x2 MMI (2-input 2-output multimode interferometer), they are combined. One output WG sends 5% of the light to PD2, and the remaining light is sent as output light into the optical fiber. The other WG sends 5% of the light to PD3. The MCU collects the second voltages of PD2 and PD3. When PD2 detects that the second voltage equals the target threshold, the phase bias point of the MZ silicon photonic modulator is determined to be the Quad point; or, when the second voltage detected by PD2 equals the second voltage detected by PD3, the phase bias point of the MZ silicon photonic modulator is also determined to be the Quad point; or, when the second voltage detected by PD2 is zero, the phase bias point of the MZ silicon photonic modulator is determined to be the Null point.

[0129] Example 3, for example Figure 7 Determining the operating point of the MZ silicon photonic modulator shown.

[0130] like Figure 7 As shown, the light entering the input WG is split in two by the MMI at the input end and enters the two arms WG of the MZ silicon photonic modulator. Each arm WG has a modulator, and one of the arms WG also has a Heater. Under the action of the Heater, a phase difference appears in the light between the two arms WG. After the two arms WG enter the 2x2 MMI (2-input 2-output multimode interferometer) at the output end, they are combined. One output WG sends 5% of the light to PD2, and the remaining light enters the optical fiber as the output light. The other WG sends 5% of the light to PD3. The MCU collects the second voltages of PD2 and PD3. When the second voltage detected by PD2 is equal to the second voltage detected by PD3, the phase bias point of the MZ silicon photonic modulator can be determined as the Quad point; or, when the second voltage detected by PD2 is zero, the phase bias point of the MZ silicon photonic modulator can be determined as the Null point.

[0131] Example 4, for example Figure 8 Determining the operating point of the MZ silicon photonic modulator shown.

[0132] like Figure 8As shown, the light entering the input WG is split in two by the MMI at the input end and enters the two arms WG of the MZ silicon photonic modulator. Each arm WG has a modulator, and each arm WG has a Heater1 and a Heater2, but only one Heater1 or Heater2 needs to operate. Under the action of the Heaters, a phase difference appears in the light between the two arms WG. After the two arms WG enter the 2x2 MMI at the output end, they are combined. One output WG sends 5% of the light to PD2, and the remaining light enters the optical fiber as the output light. The other WG sends 5% of the light to PD3. The MCU collects the second voltages of PD2 and PD3. When the second voltage detected by PD2 is equal to the second voltage detected by PD3, the phase bias point of the MZ silicon photonic modulator can be determined as the Quad point; or, when the second voltage detected by PD2 is zero, the phase bias point of the MZ silicon photonic modulator can be determined as the Null point.

[0133] Example 5, for example Figure 9 Determining the operating point of the MZ silicon photonic modulator shown.

[0134] like Figure 9 As shown, 5% of the light entering the WG is sent to PD1, and then split in two by the MMI at the input end, entering the two arms WG of the MZ silicon photonic modulator. Each arm WG has a modulator, and each arm WG has a Heater1 and a Heater2, but only one Heater1 or Heater2 needs to operate. Under the action of the Heaters, a phase difference appears in the light between the two arms WG. After the two arms WG enter the 2x2 MMI, they are combined. One WG sends 5% of the light to PD2, and the remaining light is sent as output light into the optical fiber. The other WG sends 5% of the light to PD3. The MCU collects the second voltage of PD2 and PD3. When PD2 detects that the second voltage equals the target threshold, the phase offset point of the MZ silicon photonic modulator is determined to be the Quad point; or, when the second voltage detected by PD2 equals the second voltage detected by PD3, the phase offset point of the MZ silicon photonic modulator is also determined to be the Quad point; or, when the second voltage detected by PD2 is zero, the phase offset point of the MZ silicon photonic modulator is determined to be the Null point.

[0135] It should be noted that in the example mentioned above, the output MMI uses a 2x2 MMI MZ silicon photonic modulator. In actual use, the 2x2 MMI can be replaced by a direct coupler (DC), and the operating point adjustment of the replaced MZ silicon photonic modulator is also applicable to the operating point adjustment method provided in this application.

[0136] After determining the operating point of the MZ silicon photonics modulator, the MCU can choose to adjust the operating point or re-determine it based on the determination result. The adjustment process is the same as the scheme mentioned above, and can be referred to the adjustment process above, which will not be repeated here.

[0137] Based on the same inventive concept, this application also provides an MZ silicon photonic modulator phase bias point adjustment device.

[0138] See Figure 10 This application provides an MZ silicon photonics modulator phase bias point adjustment device. The device may be the microcontroller or a chip or integrated circuit in the device. The device includes modules / units / technical means for performing the method executed by the microcontroller in the above method embodiment.

[0139] For example, the device 1000 includes:

[0140] Processing module 1001 is used to apply different bias voltages to the MZ silicon photonic modulator respectively, and to obtain at least one first voltage obtained at the output terminal of the MZ silicon photonic modulator under the influence of the different bias voltages; the first voltage is used to indicate the voltage obtained when the optical signal split at the output terminal onto the photodetector is converted into current and flows through the sampling resistor; the maximum value of the at least one first voltage is used as a first threshold.

[0141] The adjustment module 1002 is used to adjust the phase bias point of the MZ silicon photonic modulator based on the first threshold, so that the phase bias point is at the standard operating point.

[0142] As one example, Figure 10 The device described can be used to perform Figure 2 The method described in the illustrated embodiment is therefore relevant to the functions that each functional module of the device can achieve. Figure 2 The description of the embodiments shown will not be repeated here.

[0143] It should be noted that although several modules or sub-modules of the device have been mentioned in the detailed description above, this division is merely exemplary and not mandatory. In fact, according to embodiments of the present invention, the features and functions of two or more units described above can be embodied in a single module. Conversely, the features and functions of a module described above can be further divided and embodied by multiple modules.

[0144] As one possible product form of the aforementioned device, see [link to product description]. Figure 11 This application also provides an electronic device 1100, comprising:

[0145] At least one processor 1101; and a communication interface 1103 communicatively connected to the at least one processor 1101; the at least one processor 1101 causes the electronic device 1100 to execute the method steps performed by any device in the above method embodiments through the communication interface 1103 by executing instructions stored in the memory 1102.

[0146] Optionally, the memory 1102 is located outside the electronic device 1100.

[0147] Optionally, the electronic device 1100 includes the memory 1102, which is connected to the at least one processor 1101. The memory 1102 stores instructions that can be executed by the at least one processor 1101. (Appendix) Figure 11 The dashed line indicates that memory 1102 is optional for electronic device 1100.

[0148] The processor 1101 and the memory 1102 can be coupled through an interface circuit or integrated together; no restriction is imposed here.

[0149] This application embodiment does not limit the specific connection medium between the processor 1101, memory 1102, and communication interface 1103. This application embodiment... Figure 11 The processor 1101, memory 1102, and communication interface 1103 are connected via a bus 1104. Figure 11 The connections between other components are shown in bold and are for illustrative purposes only, not as limiting information. The bus can be divided into address bus, data bus, control bus, etc. For ease of illustration, Figure 11 The text uses only a single thick line to represent a bus, but this does not imply that there is only one bus or one type of bus. It should be understood that the processor mentioned in the embodiments of this application can be implemented in hardware or software. When implemented in hardware, the processor can be a logic circuit, integrated circuit, etc. When implemented in software, the processor can be a general-purpose processor, implemented by reading software code stored in memory.

[0150] For example, the processor can be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor can be a microprocessor or any conventional processor.

[0151] It should be understood that the memory mentioned in the embodiments of this application can be volatile memory or non-volatile memory, or may include both volatile and non-volatile memory. The non-volatile memory can be read-only memory (ROM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), or flash memory. The volatile memory can be random access memory (RAM), which is used as an external cache. By way of example, but not limitation, many forms of RAM are available, such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM), Double Data Rate SDRAM (DDR SDRAM), Enhanced SDRAM (ESDRAM), Synchlink DRAM (SLDRAM), and Direct RAM (DR RAM).

[0152] It should be noted that when the processor is a general-purpose processor, DSP, ASIC, FPGA, or other programmable logic device, discrete gate or transistor logic device, or discrete hardware component, the memory (storage module) can be integrated into the processor.

[0153] It should be noted that the memories described herein are intended to include, but are not limited to, these and any other suitable types of memories.

[0154] As another possible product form, this application embodiment also provides a computer-readable storage medium for storing instructions that, when executed, cause a computer to perform the method steps performed by any of the devices in the above method examples.

[0155] Those skilled in the art will understand that embodiments of this application can be provided as methods, systems, or computer program products. Therefore, this application can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, this application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0156] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (systems), and computer program products according to this application. It should be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0157] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0158] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0159] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A method for adjusting the phase bias point of an MZ silicon photonic modulator, characterized in that, include: Different bias voltages are applied to the MZ silicon photonic modulator, and at least one first voltage is obtained at the output terminal of the MZ silicon photonic modulator under the influence of the different bias voltages. The first voltage is used to indicate the voltage obtained when the optical signal split at the output end onto the photodetector is converted into current and flows through the sampling resistor; The maximum value among the at least one first voltage is used as the first threshold; The phase bias point of the MZ silicon photonic modulator is adjusted based on the first threshold so that the phase bias point is at the standard operating point.

2. The method as described in claim 1, characterized in that, The different bias voltages include bias voltages with different values ​​within a preset voltage range.

3. The method as described in claim 1, characterized in that, The method further includes: Obtain the first threshold value of the MZ silicon photonic modulator at different ambient temperatures; Save the correspondence between the different ambient temperatures and the first threshold; Based on the correspondence, the target first threshold corresponding to the ambient temperature of the MZ silicon photonic modulator that is in operation is determined; The phase bias point of the MZ silicon photonic modulator in operation is adjusted based on the target first threshold.

4. The method as described in claim 1, characterized in that, Adjusting the phase bias point of the MZ silicon photonic modulator based on the first threshold includes: Obtain the second voltage at the output terminal of the MZ silicon photonic modulator that is in operation; The second voltage is compared with a target threshold to determine whether the error between the second voltage and the target threshold is less than a first preset error range; wherein the target threshold is the product of a preset coefficient and the first threshold. If the error between the second voltage and the target threshold is less than the first preset error range, then the phase bias point of the MZ silicon photonic modulator in operation is determined to be at the standard operating point.

5. The method as described in claim 4, characterized in that, The method further includes: The error between the phase offset point and the standard operating point of the MZ silicon photonic modulator is determined to be greater than the first preset error range; Obtain the target difference, which is the difference between the second voltage and the target threshold; If the target difference is determined to be positive, then the bias voltage input to the MZ silicon photonics modulator is reduced so that the error between the phase bias point of the MZ silicon photonics modulator and the standard operating point is less than a first preset error range; or... If the target difference is determined to be negative, the bias voltage input to the MZ silicon photonic modulator is increased so that the error between the phase bias point of the MZ silicon photonic modulator and the standard operating point is less than the first preset error range.

6. The method as described in claim 1, characterized in that, The step of adjusting the phase bias point of the MZ silicon photonic modulator based on the first threshold includes: Determine the value of the bias voltage input to the MZ silicon photonic modulator; If the bias voltage input to the MZ silicon photonic modulator is determined to be greater than a second threshold, then the bias voltage is adjusted to the second threshold; wherein the second threshold is greater than or equal to the bias voltage corresponding to the first threshold; or, If it is determined that the value of the bias voltage input to the MZ silicon photonic modulator is less than a third threshold, then the value of the bias voltage is adjusted to the third threshold; wherein the third threshold is less than or equal to the bias voltage corresponding to the first voltage with the smallest value.

7. The method as described in claim 6, characterized in that, The target bias voltage within the voltage range included by the second threshold and the third threshold is less than any other target bias voltage, wherein the target bias voltage is the bias voltage corresponding to the phase bias point of the MZ silicon photonic modulator when it is at the standard operating point.

8. The method according to any one of claims 1-7, characterized in that, The MZ silicon photonic modulator includes at least two thermo-optical phase shifters, which are respectively disposed in the two optical paths of the MZ silicon photonic modulator. The thermo-optical phase shifters are used to modulate the phase bias point of the MZ silicon photonic modulator according to the received bias voltage. The method further includes: When the error between the phase bias point of the MZ silicon photonic modulator and the standard operating point is less than a first preset error range, the bias voltage corresponding to the at least two thermo-optical phase shifters; Determine the target thermo-optical phase shifter with the smallest bias voltage from the at least two thermo-optical phase shifters; Disable the other thermo-optical phase shifters among the at least two thermo-optical phase shifters except for the target thermo-optical phase shifter.

9. The method according to any one of claims 1-3, characterized in that, The output terminal of the MZ silicon photonic modulator includes at least two photodetectors, and the at least two photodetectors correspond one-to-one with at least two optical signals at the output terminal of the MZ silicon photonic modulator; the method further includes: Obtain at least two third voltages corresponding to the at least two photodetectors included at the output terminal of the MZ silicon photonic modulator; If the error between any two of the at least two third voltages is less than the second preset error range, then the phase bias point of the MZ silicon photonic modulator is determined to be at the standard operating point.

10. A phase bias point adjustment device for an MZ silicon photonic modulator, characterized in that, include: The processing module is used to apply different bias voltages to the MZ silicon photonic modulator and obtain at least one first voltage at the output terminal of the MZ silicon photonic modulator under the influence of the different bias voltages; the first voltage is used to indicate the voltage obtained when the optical signal split at the output terminal onto the photodetector is converted into current and flows through the sampling resistor; the maximum value of the at least one first voltage is used as a first threshold. The adjustment module is used to adjust the phase bias point of the MZ silicon photonic modulator based on the first threshold, so that the phase bias point is at the standard operating point.

11. The apparatus as claimed in claim 10, characterized in that, The different bias voltages include bias voltages with different values ​​within a preset voltage range.

12. The apparatus as claimed in claim 10, characterized in that, The processing module is also used for: Obtain the first threshold corresponding to the MZ silicon photonic modulator under different ambient temperatures; save the correspondence between the different ambient temperatures and the first threshold; determine the target first threshold corresponding to the ambient temperature of the MZ silicon photonic modulator that is in operation based on the correspondence. The adjustment module is also used to adjust the phase bias point of the MZ silicon photonic modulator that is in operation based on the target first threshold.

13. The apparatus as claimed in claim 10, characterized in that, When the adjustment module is used to adjust the phase bias point of the MZ silicon photonic modulator based on the first threshold, it is specifically used for: Obtain the second voltage at the output terminal of the MZ silicon photonic modulator that is in operation; The second voltage is compared with a target threshold to determine whether the error between the second voltage and the target threshold is less than a first preset error range; wherein the target threshold is the product of a preset coefficient and the first threshold. If the error between the second voltage and the target threshold is less than the first preset error range, then the phase bias point of the MZ silicon photonic modulator in operation is determined to be at the standard operating point.

14. The apparatus as claimed in claim 13, characterized in that, The adjustment module is also used for: The error between the phase offset point and the standard operating point of the MZ silicon photonic modulator is determined to be greater than the first preset error range; Obtain the target difference, which is the difference between the second voltage and the target threshold; If the target difference is determined to be positive, the bias voltage input to the MZ silicon photonic modulator is reduced so that the error between the phase bias point of the MZ silicon photonic modulator and the standard operating point is less than the first preset error range. or, If the target difference is determined to be negative, the bias voltage input to the MZ silicon photonic modulator is increased so that the error between the phase bias point of the MZ silicon photonic modulator and the standard operating point is less than the first preset error range.

15. The apparatus as claimed in claim 10, characterized in that, When the adjustment module is used to adjust the phase bias point of the MZ silicon photonic modulator based on the first threshold, it is specifically used for: Determine the value of the bias voltage input to the MZ silicon photonic modulator; If the bias voltage input to the MZ silicon photonic modulator is determined to be greater than a second threshold, then the bias voltage is adjusted to the second threshold; wherein the second threshold is greater than or equal to the bias voltage corresponding to the first threshold; or, If it is determined that the value of the bias voltage input to the MZ silicon photonic modulator is less than a third threshold, then the value of the bias voltage is adjusted to the third threshold; wherein the third threshold is less than or equal to the bias voltage corresponding to the first voltage with the smallest value.

16. The apparatus as claimed in claim 15, characterized in that, The target bias voltage within the voltage range included by the second threshold and the third threshold is less than any other target bias voltage, wherein the target bias voltage is the bias voltage corresponding to the phase bias point of the MZ silicon photonic modulator when it is at the standard operating point.

17. The apparatus according to any one of claims 10-16, characterized in that, The MZ silicon photonic modulator includes at least two thermo-optical phase shifters, which are respectively disposed in the two optical paths within the MZ silicon photonic modulator. The thermo-optical phase shifters are used to modulate the phase bias point of the MZ silicon photonic modulator according to the received bias voltage. The adjustment module is further used for: When the error between the phase bias point of the MZ silicon photonic modulator and the standard operating point is less than a first preset error range, the bias voltage corresponding to the at least two thermo-optical phase shifters; Determine the target thermo-optical phase shifter with the smallest bias voltage from the at least two thermo-optical phase shifters; Disable the other thermo-optical phase shifters among the at least two thermo-optical phase shifters except for the target thermo-optical phase shifter.

18. The apparatus according to any one of claims 10-12, characterized in that, The output of the MZ silicon photonic modulator includes at least two photodetectors, each photodetector corresponding one-to-one with at least two optical signals at the output of the MZ silicon photonic modulator; the adjustment module is further used for: Obtain at least two third voltages corresponding to the at least two photodetectors included at the output terminal of the MZ silicon photonic modulator; If the error between any two of the at least two third voltages is less than the second preset error range, then the phase bias point of the MZ silicon photonic modulator is determined to be at the standard operating point.

19. An electronic device, characterized in that, include: At least one processor; and a memory communicatively connected to the at least one processor; The memory stores instructions executable by the at least one processor, which executes the instructions stored in the memory to perform the method as described in any one of claims 1-9.

20. A computer-readable storage medium, characterized in that, The computer-readable storage medium is used to store instructions that, when executed, cause the method as described in any one of claims 1-9 to be implemented.

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