Packaging structure and power module
By integrating a temperature sensor into the packaging structure, the problem of inaccurate temperature monitoring of power devices in existing technologies is solved, achieving accurate temperature monitoring and high reliability. This improves the performance and output power of the packaging structure and is suitable for fields such as electric vehicles, photovoltaic power generation, and wind power generation.
Patent Information
- Application Number
- CN202410675839.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-28
- Publication Date
- 2025-12-26
- Estimated Expiration
- 2044-05-28
AI Technical Summary
Existing packaging structures cannot accurately monitor the temperature of power devices, resulting in large errors, which affects the performance of the packaging structure and cannot effectively improve output power.
Integrating a temperature sensor into the packaging structure allows for precise monitoring of the power device's temperature by creating a groove in the molding compound and embedding the temperature sensor within the groove, or by integrating it into the power device itself.
It enables precise monitoring of power device temperature, improves the maximum junction temperature and output power of the package structure, and maintains the small size and high reliability of the package structure, making it suitable for electric vehicles, photovoltaic power generation, wind power generation and other fields.
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Figure CN118645477B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor, more particularly, to a packaging structure and a power module. BACKGROUND
[0002] The packaging structure integrates and packages power electronic devices such as metal oxide semiconductor field effect transistor (MOS), SiC (silicon carbide) metal oxide semiconductor field effect transistor, insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and the like together. Due to the advantages of high integration, high reliability and the like, the packaging structure and the power module win a larger and larger market in the fields of electric vehicles, photovoltaic power generation, wind power generation, industrial frequency conversion and the like. With the rapid development and popularization of new energy vehicles, it is necessary to develop packaging structures with higher reliability, higher heat dissipation capacity and higher power density to meet market demand.
[0003] The existing packaging structure cannot be built-in temperature sensor due to the limitation of the size and the number of pins of the packaging structure. Therefore, the junction temperature of the power device is inversely calculated by monitoring the water temperature of the inlet and outlet of the heat dissipation channel, or the junction temperature of the power device is indirectly monitored by hot sticking thermocouple on the surface of the plastic package of the packaging structure. This method leads to large and untimely error in monitoring the junction temperature of the power device, thereby affecting the maximum junction temperature allowed to be used by the packaging structure. It is necessary to leave a temperature rise allowance of 20%-40% for the packaging structure, which leads to the fact that the output power of the packaging structure cannot be effectively exerted and improved.
[0004] Therefore, there is an urgent need for a packaging structure that can more accurately reflect the temperature of the power device to reduce temperature error and fully exert the performance of the packaging structure. SUMMARY
[0005] Therefore, the present application provides a packaging structure and a power module, which realizes accurate detection and feedback of the temperature of the power device, and can fully exert the performance of the packaging structure.
[0006] To achieve the above object, according to one aspect of the present application, a packaging structure is provided, comprising: a first substrate; a power device located on a first surface of the first substrate; a plastic package covering the first substrate and the power device, the plastic package comprising opposite first and third side edges and opposite second and fourth side edges, the first and third side edges being perpendicular; a first power terminal located on the first side edge of the plastic package, the first power terminal being electrically connected to the power device in the plastic package; a second power terminal located on the second side edge of the plastic package, the second power terminal being electrically connected to the power device in the plastic package; a signal terminal located on the first side edge of the plastic package, the signal terminal being electrically connected to the power device in the plastic package; a temperature sensor located in the plastic package; and a pin of the temperature sensor being electrically connected to the temperature sensor.
[0007] Optionally, the pin of the temperature sensor and the portion of the signal terminal parallel to the plastic package are located in different planes respectively.
[0008] Optionally, the pin of the temperature sensor does not exceed the outline of the packaging structure, the length of the outline of the packaging structure being the distance between the first and second power terminals, and the width of the outline of the packaging structure being the distance between the third and fourth side edges of the plastic package.
[0009] Optionally, the pin of the temperature sensor does not exceed the outline of the plastic package.
[0010] Optionally, the width of the first power terminal accounts for 50% to 80% of the width of the plastic package, and the width of the second power terminal accounts for 90% to 100% of the width of the plastic package.
[0011] Optionally, the first power terminal and the signal terminal are located in the same plane.
[0012] Optionally, the signal terminal comprises a Kelvin pin and a gate, the Kelvin pin being connected to the first power terminal, and the gate being connected to the power device.
[0013] Optionally, the power device is one of a silicon-based, silicon carbide-based and gallium nitride-based power device.
[0014] Optionally, when the power device is a MOS, the first power terminal is a source, and the second power terminal is a drain.
[0015] Optionally, when the power device is an IGBT, the first power terminal is an emitter, and the second power terminal is a collector.
[0016] Optionally, the length of the outline of the packaging structure is 40mm-50mm, the width of the outline of the packaging structure is 15mm-20mm, and the thickness of the plastic package is 3mm-8mm.
[0017] Optionally, the thickness of the plastic package is 3mm-5mm.
[0018] Optionally, the pin of the temperature sensor comprises a second part, the second part of the pin of the temperature sensor is parallel to the surface of the plastic package, and the second part of the pin of the temperature sensor is connected to the surface of the plastic package by glue or buckle.
[0019] Optionally, the pin of the temperature sensor further comprises a third part connected to the second part, and the third part of the pin of the temperature sensor is perpendicular to the first substrate.
[0020] Optionally, the pin of the temperature sensor further comprises a first part connected to the second part, and the first part of the pin of the temperature sensor extends into the plastic package and is connected to the temperature sensor.
[0021] Optionally, the signal end comprises a part extending out of the first side edge of the plastic package and parallel to the plastic package and a bend, the bend of the signal end is perpendicular to the first substrate, and the second part of the pin of the temperature sensor and the part of the signal end extending out of the first side edge of the plastic package and parallel to the plastic package are located in different planes respectively.
[0022] Optionally, the temperature sensor comprises at least one of a positive temperature coefficient thermistor and a negative temperature coefficient thermistor.
[0023] Optionally, the thickness of the pin of the temperature sensor is 0.1mm-1.0mm, and the width of the pin of the temperature sensor is 0.4mm-2.5mm.
[0024] Optionally, the thickness of the pin of the temperature sensor is 0.3mm-0.8mm, and the width of the pin of the temperature sensor is 1.2mm-1.6mm.
[0025] Optionally, the pin of the temperature sensor comprises two pins, and the distance between the two pins of the temperature sensor is 0.3mm-1.2mm.
[0026] Optionally, the distance between the two pins of the temperature sensor is 0.8mm.
[0027] Optionally, the third part of the pin of the temperature sensor is parallel to the bend of the signal end.
[0028] Optionally, a distance between the third part of the pin of the temperature sensor and the bending of the signal end is 1mm-5mm.
[0029] Optionally, a distance between the third part of the pin of the temperature sensor and the bending of the signal end is not less than 3.3mm.
[0030] Optionally, a second surface of the first substrate is exposed from the plastic package, the first surface is opposite to the second surface, a creepage distance between the pin of the temperature sensor and the second surface of the first substrate is not less than 5mm, and an electrical spacing between the pin of the temperature sensor and the second surface of the first substrate is not less than 2mm.
[0031] Optionally, a side surface of the plastic package is provided with a groove, and the temperature sensor is located in the groove.
[0032] Optionally, the temperature sensor is integrated in the power device, the pin of the temperature sensor only includes one, and a bottom surface of the groove exposes the first substrate.
[0033] Optionally, the groove is located above the power device.
[0034] Optionally, the temperature sensor and the pin of the temperature sensor are electrically connected by welding or a bonding wire.
[0035] Optionally, a protective layer is further included, the protective layer fills the groove, and the protective layer covers the temperature sensor and a connection between the pin of the temperature sensor and the temperature sensor.
[0036] Optionally, the groove corresponds to the power device, and a bottom surface of the groove is the plastic package.
[0037] Optionally, a distance between the bottom surface of the groove and the power device is 0.1mm-2mm.
[0038] Optionally, a bottom surface of the groove exposes a first surface of the first substrate, and the temperature sensor is located on the first surface of the first substrate.
[0039] Optionally, a second substrate is further included, the first power end is connected to the power device inside the plastic package to form a connection part, the second substrate is located on the connection part, a bottom surface of the groove exposes the second substrate, and the temperature sensor is located on the second substrate.
[0040] Optionally, the power device includes an IGBT device and an FRD device, or the power device includes a MOS device, or the power device includes an RC-IGBT device.
[0041] Optionally, the first substrate and the second substrate are DBC ceramic insulating substrates or AMB ceramic insulating substrates.
[0042] According to another aspect of the present application, a power module is provided, comprising a third substrate and a plurality of packaging structures, each of the plurality of packaging structures being located on the third substrate, each of the packaging structures comprising: a first substrate; a power device located on a first surface of the first substrate; a plastic package covering the first substrate and the power device, the plastic package comprising opposite first and third sides and opposite second and fourth sides, the first and third sides being perpendicular; a first power terminal located on the first side of the plastic package, the first power terminal being electrically connected to the power device in the plastic package; a second power terminal located on the second side of the plastic package, the second power terminal being electrically connected to the power device in the plastic package; a signal terminal located on the first side of the plastic package, the signal terminal being electrically connected to the power device in the plastic package; a temperature sensor located in the plastic package; and a pin of the temperature sensor being electrically connected to the temperature sensor.
[0043] Optionally, the pin of the temperature sensor and the portion of the plastic package where the signal terminal is located are located in different planes.
[0044] Optionally, the pin of the temperature sensor of the packaging structure does not exceed the outline of the packaging structure, the length of the outline of the packaging structure being the distance between the first power terminal and the second power terminal, and the width of the outline of the packaging structure being the distance between the third side and the fourth side of the plastic package.
[0045] Optionally, the pin of the temperature sensor of the packaging structure does not exceed the outline of the corresponding plastic package.
[0046] Optionally, the width of the first power terminal of the packaging structure accounts for 50% to 80% of the width of the plastic package, and the width of the second power terminal of the packaging structure accounts for 90% to 100% of the width of the plastic package.
[0047] Optionally, the first power terminal and the signal terminal of the packaging structure are located in the same plane.
[0048] Optionally, the signal terminal of the packaging structure comprises a Kelvin pin and a gate, the Kelvin pin being connected to the first power terminal, and the gate being connected to the power device.
[0049] Optionally, the power device is one of a silicon-based power device, a silicon carbide-based power device, and a gallium nitride-based power device.
[0050] Optionally, when the power device is a MOS, the first power terminal is a source, and the second power terminal is a drain.
[0051] Optionally, when the power device is an IGBT, the first power terminal is an emitter, and the second power terminal is a collector.
[0052] Optionally, the outline of the packaging structure has a length of 40-50 mm and a width of 15-20 mm, and the plastic package of the packaging structure has a thickness of 3-8 mm.
[0053] Optionally, the plastic package of the packaging structure has a thickness of 3-5 mm.
[0054] Optionally, the pin of the temperature sensor of the packaging structure comprises a second part parallel to the surface of the plastic package, and the second part of the pin of the temperature sensor is connected to the surface of the plastic package by glue or a buckle.
[0055] Optionally, the pin of the temperature sensor of the packaging structure further comprises a third part connected to the second part, and the third part of the pin of the temperature sensor is perpendicular to the first substrate.
[0056] Optionally, the pin of the temperature sensor of the packaging structure further comprises a first part connected to the second part, and the first part of the pin of the temperature sensor extends into the plastic package corresponding to the temperature sensor.
[0057] Optionally, the signal terminal of the packaging structure comprises a part extending out of a first side of the plastic package and parallel to the plastic package and a bent part, the bent part of the signal terminal is perpendicular to the first substrate, and the second part of the pin of the temperature sensor and the part of the signal terminal extending out of the first side of the plastic package and parallel to the plastic package are located in different planes, respectively.
[0058] Optionally, the temperature sensor comprises at least one of a positive temperature coefficient thermistor and a negative temperature coefficient thermistor.
[0059] Optionally, the pin of the temperature sensor has a thickness of 0.1-1.0 mm and a width of 0.4-2.5 mm.
[0060] Optionally, the pin of the temperature sensor has a thickness of 0.3-0.8 mm and a width of 1.2-1.6 mm.
[0061] Optionally, the pin of the temperature sensor of the packaging structure comprises two, and the distance between the two pins of the temperature sensor is 0.3mm-1.2mm.
[0062] Optionally, the distance between the two pins of the temperature sensor is 0.8mm.
[0063] Optionally, the third part of the pin of the temperature sensor of the packaging structure is parallel to the bending of the signal end.
[0064] Optionally, the distance between the third part of the pin of the temperature sensor of the packaging structure and the bending of the signal end is 1mm-5mm.
[0065] Optionally, the distance between the third part of the pin of the temperature sensor of the packaging structure and the bending of the signal end is not less than 3.3mm.
[0066] Optionally, the second surface of the first substrate of the packaging structure is exposed from the plastic package, the first surface is opposite to the second surface, the creepage distance between the pin of the temperature sensor and the second surface of the first substrate is not less than 5mm, and the electrical spacing between the pin of the temperature sensor and the second surface of the first substrate is not less than 2mm.
[0067] Optionally, one side surface of the plastic package of the packaging structure is provided with a groove, and the temperature sensor is located in the groove.
[0068] Optionally, the temperature sensor is integrated in the power device, the pin of the temperature sensor comprises only one, and the bottom surface of the groove exposes the first substrate.
[0069] Optionally, the groove is located above the power device.
[0070] Optionally, the temperature sensor and the pin of the temperature sensor are electrically connected by welding or bonding wire.
[0071] Optionally, the packaging structure further comprises a protective layer, the protective layer fills the groove, and the protective layer covers the temperature sensor and the connection between the pin of the temperature sensor and the temperature sensor.
[0072] Optionally, the groove corresponds to the power device, and the bottom surface of the groove is the plastic package.
[0073] Optionally, the distance between the bottom surface of the groove and the power device is 0.1mm-2mm.
[0074] Optionally, the bottom surface of the groove exposes the first surface of the first substrate, and the temperature sensor is located on the first surface of the first substrate.
[0075] Optionally, the packaging structure further comprises a second substrate, the first power terminal is connected with the power device inside the plastic package to form a connecting part, the second substrate is located on the connecting part, the bottom surface of the groove exposes the second substrate, and the temperature sensor is located on the second substrate.
[0076] Optionally, the power device comprises an IGBT device and an FRD device, or the power device comprises an MOS device, or the power device comprises an RC-IGBT device.
[0077] Optionally, the first substrate and the second substrate are DBC ceramic insulating substrates or AMB ceramic insulating substrates.
[0078] The application has the beneficial technical effects that the scheme provided by the application increases the temperature sensor in the limited space of the packaging structure, does not need an external temperature sensor, and can realize accurate monitoring of the temperature of the power device, thereby improving the maximum junction temperature and output power allowed by the packaging structure.
[0079] Further, the pin of the temperature sensor and the signal terminal are designed on different planes, which can avoid occupying the first power terminal on the first side of the plastic package and the second power terminal on the second side of the plastic package, ensure that the area of the first power terminal and the second power terminal is not reduced, and will not adversely affect the current output capacity and heat dissipation capacity of the first power terminal and the second power terminal.
[0080] The packaging structure and the power module of the application obtain the packaging structure with the temperature sensor by opening the groove on the plastic package and embedding the temperature sensor in the groove and fixing and protecting the temperature sensor through the protective layer, or by integrating the temperature sensor in the power device; since the temperature sensor is embedded in the plastic package, it is closer to the power device, can better reflect the actual temperature of the power device, and can effectively enhance the accuracy of temperature control, thereby improving the maximum junction temperature and output power allowed by the packaging structure.
[0081] Further, the second part of the pin of the temperature sensor corresponding to the temperature sensor is fixed to the surface of the plastic package by means of glue or buckles, which can ensure the stability of the pin of the temperature sensor, and the pin of the temperature sensor does not exceed the outline range of the packaging structure, so that the temperature sensing function is added without increasing the occupied area of the packaging structure, and the size of the power module formed by parallel connection of multiple packaging structures is not affected.
[0082] The packaging structure also has small size, high reliability and strong heat dissipation capacity, and can meet the needs of various application scenarios such as electric or hybrid vehicles, photovoltaic power generation, wind power generation, industrial frequency conversion and the like. BRIEF DESCRIPTION OF DRAWINGS
[0083] The above and other objects, features and advantages of the present application will become more apparent from the following description of embodiments of the present application, taken in conjunction with the accompanying drawings, in which:
[0084] Figure 1 is a top view schematic diagram of the packaging structure of the first embodiment of the present application;
[0085] Figure 2 is a sectional view schematic diagram of the packaging structure of the first embodiment of the present application;
[0086] Figure 3 is a top view schematic diagram of the packaging structure of the second embodiment of the present application;
[0087] Figure 4 is a sectional view schematic diagram of the packaging structure of the second embodiment of the present application;
[0088] Figure 5 is a top view schematic diagram of the packaging structure of the third embodiment of the present application;
[0089] Figure 6 is a sectional view schematic diagram of the packaging structure of the third embodiment of the present application;
[0090] Figure 7 is a top view schematic diagram of the packaging structure of the fourth embodiment of the present application;
[0091] Figure 8 is a sectional view schematic diagram of the packaging structure of the fourth embodiment of the present application;
[0092] Figure 9 is a top view schematic diagram of the packaging structure of the fifth embodiment of the present application;
[0093] Figure 10 is a sectional view schematic diagram of the packaging structure of the fifth embodiment of the present application;
[0094] Figure 11 is a top view schematic diagram of the packaging structure of the sixth embodiment of the present application;
[0095] Figure 12 is a sectional view schematic diagram of the packaging structure of the sixth embodiment of the present application;
[0096] Figure 13 is a top view schematic diagram of the power module of the first embodiment of the present application. DETAILED DESCRIPTION
[0097] The present application will be described in detail below based on the embodiments, but the present application is not limited to these embodiments only. In the following detailed description of the present application, some specific details are described in detail. The present application can also be fully understood without the description of these details. In order to avoid confusion of the essence of the present application, the well-known methods, processes, procedures, elements are not described in detail.
[0098] In the description of the present application, it should be understood that the orientation or position relationship indicated by the terms "up", "down", "left", "right", "inner", "outer", "transverse", "longitudinal" and the like is based on the orientation or position relationship shown in the corresponding drawings, which is for the purpose of facilitating the description of the shape, position and connection relationship of the components in the present application, and does not indicate or imply that the components must be located in a specific orientation and shape structure in the whole, and should not be understood as a limitation of the present application.
[0099] In order to better show the structure of the present application, the plastic package 210 used for covering is processed in perspective in the drawings, and the structure of the signal end inside the plastic package and the bonding wire are omitted in 11. Since the present application includes a stacked structure, part of the structure is depicted in non-black color to avoid confusion and difficulty in distinguishing. Figure 3 、 7 , 11. Since the present application includes a stacked structure, part of the structure is depicted in non-black color to avoid confusion and difficulty in distinguishing.
[0100] Figure 1 is a top view of the packaging structure of the first embodiment of the present application, Figure 2 is a cross-sectional view of the packaging structure of the first embodiment of the present application; it can be seen from it that the packaging structure of the first embodiment includes: a first substrate 110, a power device 120, a plastic package 210, a first power terminal 220, a second power terminal 230, a signal terminal 240, a temperature sensor 150 and a pin of the temperature sensor. Among them, the plastic package 210 is, for example, rectangular, which covers the power device 120, which includes, for example, MOS (Metal-Oxide Semiconductor Field Effect Transistor), RC-IGBT (Reverse-Conducting Insulated Gate Bipolar Transistor), IGBT (Insulated Gate Bipolar Transistor) and FRD (Fast Recovery Diode) and the like, wherein the MOS device, RC-IGBT device, FRD device can be silicon-based, silicon carbide-based or gallium nitride-based device, but not limited to this; the first power terminal 220 and the second power terminal 230 are respectively arranged at the first side edge and the second side edge of the plastic package 210, and the first side edge and the second side edge are arranged opposite to each other; the signal terminal 240 is, for example, arranged at the first side edge of the plastic package 210 as the first power terminal 220, and the signal terminal 240 is, for example, located on one side of the first power terminal 220 (for example Figure 1The signal terminal 240 is connected to the power device 120, and is located on the right side of the power device 120 in the figure, of course, the position of the signal terminal 240 and the first power terminal 220 can be interchanged. The signal terminal 240, for example, comprises a Kelvin pin 241 and a gate 242, specifically, the Kelvin pin 241 is close to the first power terminal 220, and the gate 242 is far away from the first power terminal 220. When the power device 120 is a MOS, the first power terminal 220 is a source, and the second power terminal 230 is a drain; when the power device is an IGBT, the first power terminal 220 is an emitter, and the second power terminal 230 is a collector.
[0101] The first substrate 110, for example, is a ceramic insulating substrate, for example, a DBC ceramic substrate (Direct Bond Copper) or an AMB ceramic substrate (Active Metal Brazing); the power device 120 is arranged on the upper surface (the first surface) of the first substrate 110, and the first power terminal 220, the second power terminal 230 and the signal terminal 240 are arranged above the upper surface of the substrate 110 and the power device 120, specifically, the second power terminal 230 is connected to the first substrate 110 and extends from the upper side (the second side) of the plastic package 210; the first power terminal 220 is connected to the power device 120 inside the plastic package 210 to form a connection part 221, the first power terminal 220 extends from the lower side (the first side) of the plastic package 210, and the connection part 221, for example, is a metal sheet (such as a copper sheet); the Kelvin pin 241 in the signal terminal 240, for example, is connected to the first power terminal 220, and the Kelvin pin 241 comprises a part extending from the first side of the plastic package 210 and parallel to the plastic package 210 and a bend, the bend is perpendicular to the first substrate 110; the gate 242 in the signal terminal 240, for example, is connected to the power device 120 through a bonding wire, and the gate 242 comprises a part extending from the first side of the plastic package 210 and parallel to the plastic package 210 and a bend, the bend is perpendicular to the first substrate 110. The positions of the first power terminal 220 and the signal terminal 240 extending from the plastic package 210 are located in the same plane. The plastic package 210, for example, covers the first substrate 110 and the power device 120; the first power terminal 220, the second power terminal 230 and the signal terminal 240 extend from the plastic package 210 to be electrically connected to the outside, specifically, in order to obtain better heat dissipation effect, the lower surface (the second surface) of the first substrate 110, for example, is at least partially exposed from the plastic package 210.
[0102] The upper surface of the plastic package 210 is also provided with a groove 211, specifically, the position of the groove 211 corresponds to the hottest part of the power device 120 for example, the bottom surface of the groove 211 is the plastic package 210, and the distance between the bottom surface of the groove 211 and the power device 120 is 0.1mm-2mm, that is, to ensure that the bottom surface of the groove 211 and the power device 120 have 0.1mm-2mm thick plastic sealing material, to ensure insulation effect. The temperature sensor 150 is located in the groove 211, the first part 161 of the pin of the temperature sensor extends into the groove 211 and is connected to the temperature sensor 150 by welding to realize electrical connection, the second part 162 of the pin of the temperature sensor is connected to the first part 161, extends from the groove 211 to the upper surface of the plastic package 210 and is parallel to the upper surface of the plastic package 210, and the third part 163 of the pin of the temperature sensor is connected to the second part 162 and is bent to form a connection end for external electrical connection. The pin of the temperature sensor is located above the plastic package 210 and does not exceed the outline of the plastic package 210, for example, and the second part 162 of the pin of the temperature sensor is fixed to the upper surface of the plastic package 210 by glue or buckle. The part of the pin of the temperature sensor parallel to the plastic package 210 and the part of the signal end 240 parallel to the plastic package 210 are located in different planes respectively, specifically, the second part 162 of the pin of the temperature sensor and the part of the signal end 240 extending out of the first side edge of the plastic package 210 and parallel to the plastic package 210 are located in different planes respectively. The width of the first power end 220 accounts for 50%-80% of the width of the plastic package 210; the width of the second power end 230 accounts for 90%-100% of the width of the plastic package 210. After the temperature sensor 150 and the pin of the temperature sensor are set, the groove 211 is filled with a protective layer 151, which is a plastic sealing material such as epoxy resin or silicone, to fix and protect the temperature sensor 150 and the first part 161 of the pin of the temperature sensor connected thereto. Specifically, the temperature sensor 150 is a positive temperature coefficient thermistor (PTC) or a negative temperature coefficient thermistor (NTC) for example, the pin of the temperature sensor includes two pins corresponding thereto, which are electrically connected to the positive and negative electrodes of the thermistor respectively, the third part 163 of the two pins of the temperature sensor is perpendicular to the first surface of the first substrate 110 for example, and the top of the third part 163 of the pin of the temperature sensor is flush with the top of the signal end 240; the thickness of the pin of the temperature sensor is 0.1mm-1.0mm for example, preferably 0.3mm-0.8mm, and the width is 0.4mm-2.5mm for example, preferably 1.2mm-1.6mm.In order to avoid the signal of the temperature sensor 150 being interfered, the distance between the two pins of the temperature sensor is 0.3mm-1.2mm, preferably 0.8mm, the third part 163 of the pin of the temperature sensor is parallel to the bending of the signal end 240, and the distance between the third part 163 of the pin of the temperature sensor and the bending of the signal end 240 is, for example, 1mm-5mm, preferably not less than 3.3mm, the creepage distance between the pin of the temperature sensor and the second surface of the first substrate 110 is not less than 5mm, and the electrical spacing is not less than 2mm.
[0103] Figure 3 is a top view of the packaging structure of the second embodiment of the present application, Figure 4 is a sectional view of the packaging structure of the second embodiment of the present application; the second embodiment is similar to the first embodiment, and the same parts are not described again. The difference between the second embodiment and the first embodiment is that, in the second embodiment, the pin of the temperature sensor no longer has the bending structure (the first part 161) extending into the groove 211, the temperature sensor 150 is electrically connected with the second part 162 of the pin of the temperature sensor through the bonding wire 152, and correspondingly, in order to protect the bonding wire 152 and the corresponding electrical connection, the protective layer 151 not only fills the groove 211 to fix and protect the temperature sensor 150, but also needs to coat the corresponding bonding wire 152 and the electrical connection area on the upper surface of the plastic package 210. Of course, the bonding wire can also be partially exposed.
[0104] Figure 5 is a top view of the packaging structure of the third embodiment of the present application, Figure 6is a cross-sectional schematic view of the packaging structure of the third embodiment of the present application; the third embodiment is similar to the first embodiment, and the same parts are not described again. The difference between the third embodiment and the first embodiment is that, in the third embodiment, the bottom surface of the recess 211 exposes the connecting part 221 of the first power terminal 220, and the second substrate 111 is arranged on the connecting part 221 of the bottom surface of the recess 211 (i.e., the bottom surface of the recess 211 exposes the second substrate 111); the second substrate 111 is also a ceramic insulating substrate (e.g., DBC or AMB), for example; the second substrate 111 is arranged on the connecting part 221 of the first power terminal 220 and is welded to the connecting part 221 of the first power terminal 220; the temperature sensor 150 is arranged on the second substrate 111 by welding; specifically, the upper surface of the second substrate 111 has a patterned pad, the positive and negative electrodes of the temperature sensor 150 are welded to the corresponding pads, respectively, the first part 161 of the pin of the temperature sensor extends into the recess 211 and is electrically connected to the corresponding pad of the second substrate 111 (which can be connected by welding or a bonding wire), and the signal of the temperature sensor is led out through the pin of the temperature sensor. The protective layer 151 fills the recess 211 to fix the second substrate 111, the temperature sensor 150, and the first part 161 of the pin of the temperature sensor; the second part 162 of the pin of the temperature sensor on the upper surface of the plastic package 210 is connected and fixed to the upper surface of the plastic package 210 by means of glue or a buckle. In other embodiments, the pin of the temperature sensor can also have no first part 161, and the temperature sensor 150 is electrically connected to the second part 162 of the pin of the temperature sensor by a bonding wire.
[0105] Figure 7 is a top view of the packaging structure of the fourth embodiment of the present application, Figure 8Fig. 6 is a cross-sectional view of the packaging structure of the fourth embodiment of the present application; the fourth embodiment is similar to the third embodiment, and the same parts are not described again. The difference between the fourth embodiment and the third embodiment is that the shape of the pin of the temperature sensor in the fourth embodiment is different from that in the third embodiment. In the fourth embodiment, the third part 163 of the pin of the temperature sensor is close to the right side (third side) of the plastic package 210 instead of the lower side (first side). Further, the pin of the temperature sensor can be arranged in any area in the outline 10 of the packaging structure according to the requirement, for example, the third part 163 of the pin of the temperature sensor can also be close to the left side (fourth side) of the plastic package 210. The third side and the fourth side are arranged oppositely, and the third side is perpendicular to the first side. The length of the outline 10 of the packaging structure is the distance between the first power terminal 220 and the second power terminal 230, and the width of the outline 10 of the packaging structure is the distance between the left side (third side) and the right side (fourth side) of the plastic package. In this embodiment, the length of the outline of the packaging structure is 40-50 mm, the width of the outline of the packaging structure is 15-20 mm, the thickness of the plastic package 210 is 3-8 mm, and preferably 3-5 mm. Since the third part 163 of the pin of the temperature sensor is perpendicular to the first substrate 110, in order to obtain better support, preferably, the pin of the temperature sensor is located in the outline of the plastic package 210. It can be understood that in all embodiments, the pin of the temperature sensor can extend in any direction, as long as the pin of the temperature sensor does not exceed the outline 10 of the packaging structure.
[0106] Figure 9 Fig. 7 is a top view of the packaging structure of the fifth embodiment of the present application, Figure 10 Fig. 8 is a cross-sectional view of the packaging structure of the fifth embodiment of the present application; the fifth embodiment is similar to the first embodiment, and the same parts are not described again. The difference between the fifth embodiment and the first embodiment is that in the fifth embodiment, there is a reserved position on the first substrate 110, the temperature sensor 150 is arranged on the reserved position of the first substrate 110 and is welded to the solder pad on the reserved position, the groove 211 corresponds to the reserved position, the bottom surface of the groove 211 exposes the first surface of the first substrate 110 to expose the temperature sensor 150, the first part 161 of the pin of the temperature sensor extends into the groove 211 and is electrically connected to the solder pad on the first substrate 110 (which can be connected by welding or bonding wire), and the temperature signal of the temperature sensor 150 is led out from the upper surface of the plastic package 210 through the second part 162 and the third part 163 of the pin of the temperature sensor; similarly, the protective layer 151 fills the groove 211.
[0107] Figure 11 Fig. 9 is a top view of the packaging structure of the sixth embodiment of the present application, Figure 12is a cross-sectional schematic view of the packaging structure of the sixth embodiment of the present application; the sixth embodiment is similar to the first embodiment, and the same parts will not be described again. The difference between the sixth embodiment and the first embodiment is that, in the sixth embodiment, the temperature sensor 150 is integrated in the power device 120, for example, in the interior of an IGBT device, the pads of the temperature sensor 150 in the power device 120 are electrically connected with the pins of the temperature sensor through the bonding wires 152, and the temperature sensor in this embodiment has only one pin. Specifically, the upper surface of the first substrate 110 is provided with a pad for electrical connection with the pin of the temperature sensor, the pad on the first substrate 110 is electrically connected with the pad of the temperature sensor 150 in the power device 120 through the bonding wires 152, a recess 211 is provided on the upper surface of the plastic package 210, the recess 211 corresponds to the pad on the first substrate 110, the size of the pad is greater than the size of the recess 211, for example, the bottom of the recess 211 exposes the upper surface of the first substrate 110 and exposes part of the surface of the pad, the first part 161 of the pin of the temperature sensor extends into the recess 211 and is electrically connected (which can be connected through welding or bonding wires) with the pad, thereby realizing electrical connection with the temperature sensor 150.
[0108] Figure 13 A top view schematic diagram of the power module of the first embodiment of the present application is shown, by parallel, series or series-parallel connection of a plurality of packaging structures 100 as described above on the third substrate 1, a high-integration power module with a plurality of packaging structures can be formed, which can better meet the market demand for high power density and high reliability. It can be understood that there can be only one packaging structure 100 as described above in the power module, and other packaging structures can adopt other structures, that is, the power module includes at least one packaging structure 100 as described above, and the number, position and arrangement of the packaging structures in the power module can be designed according to the requirements, and are not limited to Figure 13 the number, position and arrangement.
[0109] The beneficial technical effects of the present application are that the scheme provided by the present application increases the temperature sensor in the limited space of the packaging structure, without external temperature sensor, and can realize accurate monitoring of the temperature of the power device, thereby improving the maximum junction temperature and output power allowed by the packaging structure.
[0110] Further, the pins of the temperature sensor and the signal end are designed on different planes, respectively, which can avoid the occupation of the first power end of the first side edge and the second power end of the second side edge of the plastic package, ensure that the area of the first power end and the second power end is not reduced, and will not adversely affect the current output capacity and heat dissipation capacity of the first power end and the second power end.
[0111] The packaging structure and the power module of the present application, the packaging structure is obtained by opening a groove on the plastic package body, embedding the temperature sensor in the groove and fixing the temperature sensor through the protective layer, or integrating the temperature sensor in the power device; since the temperature sensor is embedded in the plastic package body, it is closer to the power device, can better reflect the actual temperature of the power device, and can effectively enhance the accuracy of temperature control, thereby improving the maximum junction temperature and output power allowed by the packaging structure.
[0112] Further, the second part of the pin of the temperature sensor corresponding to the temperature sensor is fixed to the surface of the plastic package body by means of glue or buckle, which can ensure the stability of the pin of the temperature sensor, and the pin of the temperature sensor does not exceed the outline range of the packaging structure, so that the temperature sensing function is added without increasing the occupied area of the packaging structure, and the size of the power module formed by the parallel connection of multiple packaging structures is not affected.
[0113] The packaging structure also has small size, high reliability and strong heat dissipation capacity, and can meet the needs of various application scenarios such as electric or hybrid vehicles, photovoltaic power generation, wind power generation and industrial frequency conversion.
[0114] In addition, those skilled in the art should understand that the drawings provided herein are for illustrative purposes only, and the drawings are not necessarily drawn to scale.
[0115] At the same time, it should be understood that the example embodiments are provided to make the present disclosure comprehensive and fully convey its scope to those skilled in the art. Many specific details (such as examples of specific components, devices and methods) are given to provide a comprehensive understanding of the present disclosure. Those skilled in the art will understand that the specific details need not be used, and the example embodiments can be implemented in many different forms, and the example embodiments should not be understood as limiting the scope of the present disclosure. In some example embodiments, well-known device structures and well-known techniques are not described in detail.
[0116] When an element or layer is referred to as being "on", "engaged to", "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer, engaged, connected or coupled to the other element or layer, or there can be an intermediate element or layer. In contrast, when an element is referred to as being "directly on", "directly engaged to", "directly connected to" or "directly coupled to" another element or layer, there can be no intermediate element or layer. Other words of relation between elements should be interpreted in a similar manner (e.g., "between" versus "directly between", "adjacent" versus "directly adjacent", etc.). As used herein, the term "and / or" includes any or all combinations of one or more of the associated listed items.
[0117] Although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can be only used to distinguish one element, component, region, layer or section from another element, region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not necessarily denote any sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments. Also, in the description of the present application, the meaning of "a plurality" is two or more unless otherwise specified.
[0118] The preferred embodiments of the present application are described above in detail. The present application, however, is not limited to the precise embodiments, and various modifications and changes can be made to these embodiments by those skilled in the art without departing from the scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the present application.
Claims
1. A package structure, characterized by, The application relates to a packaging structure of a power device, which comprises the following parts: a first substrate; a power device on a first surface of the first substrate; a plastic package covering the first substrate and the power device, wherein the plastic package comprises opposite first and third side edges and opposite second and fourth side edges, and the first and third side edges are perpendicular; a first power terminal on the first side edge of the plastic package, which is electrically connected with the power device in the plastic package; a second power terminal on the second side edge of the plastic package, which is electrically connected with the power device in the plastic package; a signal terminal on the first side edge of the plastic package, which is electrically connected with the power device in the plastic package; a temperature sensor in the plastic package, wherein one side surface of the plastic package is provided with a groove above the power device, and the temperature sensor is arranged in the groove; a pin of the temperature sensor, which is electrically connected with the temperature sensor and does not exceed the outline of the plastic package; a protective layer, which fills the groove and covers the temperature sensor and the connection between the pin of the temperature sensor and the temperature sensor; the pin of the temperature sensor and the part of the signal terminal parallel to the plastic package are arranged in different planes; the pin of the temperature sensor comprises a second part parallel to the surface of the plastic package; the pin of the temperature sensor further comprises a third part connected with the second part, which is perpendicular to the first substrate; the pin of the temperature sensor further comprises a first part connected with the second part, which extends into the plastic package and is connected with the temperature sensor; a second substrate, wherein the first power terminal is connected with the power device to form a connecting part inside the plastic package, the second substrate is arranged on the connecting part, the bottom surface of the groove exposes the second substrate, the temperature sensor is arranged on the second substrate, and the first part of the pin of the temperature sensor is connected with the temperature sensor through the second substrate. The pin of the temperature sensor does not exceed the outline of the packaging structure, the length of the outline of the packaging structure is the distance between the first power terminal and the second power terminal, and the width of the outline of the packaging structure is the distance between the third side edge and the fourth side edge of the plastic package. The width of the first power terminal accounts for 50-80% of the width of the plastic package, and the width of the second power terminal accounts for 90-100% of the width of the plastic package. The first power terminal and the signal terminal are arranged in the same plane. The signal terminal comprises a Kelvin foot and a gate, the Kelvin foot is connected with the first power terminal, and the gate is connected with the power device. The power device is one of a silicon-based, silicon carbide-based and gallium nitride-based power device. When the power device is a MOS, the first power terminal is a source, and the second power terminal is a drain. 2. The package structure of claim 1, wherein, 3. The package structure of claim 1, wherein, 4. The package structure of claim 1, wherein, 5. The package structure of claim 1, wherein, 6. The package structure of claim 1, wherein, 7. The package structure of claim 1, wherein, 8. The package structure of claim 1, wherein, When the power device is an IGBT, the first power terminal is an emitter, and the second power terminal is a collector.
9. The package structure of claim 1, wherein, The outline of the packaging structure has a length of 40-50 mm and a width of 15-20 mm, and the thickness of the plastic package is 3-8 mm.
10. The package structure of claim 9, wherein, The thickness of the plastic package is 3-5 mm.
11. The package structure of claim 1, wherein, The second part of the pin of the temperature sensor is connected to the surface of the plastic package by glue or a buckle.
12. The package structure of claim 1, wherein, The signal terminal includes a part protruding from the first side of the plastic package and parallel to the plastic package and a bent part, the bent part of the signal terminal is perpendicular to the first substrate, and the second part of the pin of the temperature sensor is located in different planes, respectively.
13. The package structure of claim 1, wherein, The temperature sensor includes at least one of a positive temperature coefficient thermistor and a negative temperature coefficient thermistor.
14. The package structure of claim 1, wherein, The thickness of the pin of the temperature sensor is 0.1-1.0 mm, and the width of the pin of the temperature sensor is 0.4-2.5 mm.
15. The package structure of claim 13, wherein, The thickness of the pin of the temperature sensor is 0.3-0.8 mm, and the width of the pin of the temperature sensor is 1.2-1.6 mm.
16. The package structure of claim 1, wherein, The pin of the temperature sensor includes two pins, and the distance between the two pins of the temperature sensor is 0.3-1.2 mm.
17. The package structure of claim 16, wherein, The distance between the two pins of the temperature sensor is 0.8 mm.
18. The package structure of claim 12, wherein, The third part of the pin of the temperature sensor is parallel to the bent part of the signal terminal.
19. The package structure of claim 18, wherein, The distance between the third part of the pin of the temperature sensor and the bent part of the signal terminal is 1-5 mm.
20. The package structure of claim 19, wherein, The distance between the third part of the pin of the temperature sensor and the bent part of the signal terminal is not less than 3.3 mm.
21. The package structure of claim 1, wherein, The second surface of the first substrate is exposed from the plastic package, the first surface is opposite to the second surface, the creepage distance between the pin of the temperature sensor and the second surface of the first substrate is not less than 5 mm, and the electrical spacing between the pin of the temperature sensor and the second surface of the first substrate is not less than 2 mm.
22. The package structure of claim 1, wherein, The temperature sensor and the pin of the temperature sensor are electrically connected by welding or a bonding wire.
23. The package structure of claim 1, wherein, The power device includes an IGBT device and an FRD device, or the power device includes an MOS device, or the power device includes an RC-IGBT device.
24. The package structure of claim 1, wherein, The first substrate and the second substrate are DBC ceramic insulating substrates or AMB ceramic insulating substrates.
25. A power module, characterized by The packaging structure includes a third substrate and a plurality of packaging structures as claimed in claim 1, the plurality of packaging structures are located on the third substrate, and the packaging structure includes: a first substrate; a power device located on a first surface of the first substrate; a plastic package covering the first substrate and the power device, the plastic package including opposite first and third sides and opposite second and fourth sides, the first and third sides being perpendicular; a first power terminal located on the first side of the plastic package, the first power terminal being electrically connected to the power device in the plastic package; a second power terminal located at a second side of the plastic package, the second power terminal being electrically connected with the power device in the plastic package; a signal terminal located at a first side of the plastic package, the signal terminal being electrically connected with the power device in the plastic package; a temperature sensor located in the plastic package, one side surface of the plastic package of the packaging structure being provided with a groove, the groove being located above the power device, the temperature sensor being located in the groove; a pin of the temperature sensor, the pin being electrically connected with the temperature sensor, the pin of the temperature sensor of the packaging structure not exceeding the outline of the corresponding plastic package; a protective layer, the protective layer filling the groove, the protective layer covering the temperature sensor and the connection between the pin of the temperature sensor and the temperature sensor; the pin of the temperature sensor and the part of the signal terminal parallel to the plastic package are located in different planes respectively; the pin of the temperature sensor comprises a second part, the second part of the pin of the temperature sensor being parallel to the surface of the plastic package; the pin of the temperature sensor further comprises a third part connected with the second part, the third part of the pin of the temperature sensor being perpendicular to the first substrate; the pin of the temperature sensor further comprises a first part connected with the second part, the first part of the pin of the temperature sensor extending into the plastic package corresponding to the first part and being connected with the temperature sensor; a second substrate, the first power terminal being connected with the power device inside the plastic package to form a connection part, the second substrate being located on the connection part, the bottom surface of the groove exposing the second substrate, the temperature sensor being located on the second substrate, the first part of the pin of the temperature sensor being connected to the temperature sensor via the second substrate.
26. The power module of claim 25, wherein, the pin of the temperature sensor of the packaging structure does not exceed the outline of the packaging structure, the length of the outline of the packaging structure being the distance between the first power terminal and the second power terminal, the width of the outline of the packaging structure being the distance between the third side of the plastic package and the fourth side of the plastic package.
27. The power module of claim 25, wherein, the width of the first power terminal of the packaging structure accounts for 50% to 80% of the width of the plastic package; the width of the second power terminal of the packaging structure accounts for 90% to 100% of the width of the plastic package.
28. The power module of claim 25, wherein, the positions of the first power terminal and the signal terminal of the packaging structure leading out of the plastic package are located in the same plane.
29. The power module of claim 25, wherein, the signal terminal of the packaging structure comprises a Kelvin pin and a gate, the Kelvin pin being connected with the first power terminal, the gate being connected with the power device.
30. The power module of claim 25, wherein, the power device is one of a silicon-based, silicon carbide-based, and gallium nitride-based power device.
31. The power module of claim 25, wherein, when the power device is a MOS, the first power terminal is a source, and the second power terminal is a drain.
32. The power module of claim 25, wherein, when the power device is an IGBT, the first power terminal is an emitter, and the second power terminal is a collector.
33. The power module of claim 25, wherein, The outline of the packaging structure has a length of 40-50 mm and a width of 15-20 mm, and the plastic package of the packaging structure has a thickness of 3-8 mm.
34. The power module of claim 33, wherein, The plastic package of the packaging structure has a thickness of 3-5 mm.
35. The power module of claim 25, wherein, The second part of the pin of the temperature sensor is connected to the surface of the plastic package corresponding to the second part by glue or a buckle.
36. The power module of claim 25, wherein, The signal end of the packaging structure includes a part protruding from the first side of the plastic package and parallel to the plastic package and a bent part, the bent part of the signal end is perpendicular to the first substrate, and the second part of the pin of the temperature sensor and the part of the signal end protruding from the first side of the plastic package and parallel to the plastic package are located in different planes, respectively.
37. The power module of claim 25, wherein, The temperature sensor includes at least one of a positive temperature coefficient thermistor and a negative temperature coefficient thermistor.
38. The power module of claim 25, wherein, The pin of the temperature sensor has a thickness of 0.1-1.0 mm and a width of 0.4-2.5 mm.
39. The power module of claim 25, wherein, The pin of the temperature sensor has a thickness of 0.3-0.8 mm and a width of 1.2-1.6 mm.
40. The power module of claim 25, wherein, The packaging structure includes two pins of the temperature sensor, and the distance between the two pins of the temperature sensor is 0.3-1.2 mm.
41. The power module of claim 40, wherein, The distance between the two pins of the temperature sensor is 0.8 mm.
42. The power module of claim 36, wherein, The third part of the pin of the temperature sensor is parallel to the bent part of the signal end.
43. The power module of claim 42, wherein, The distance between the third part of the pin of the temperature sensor and the bent part of the signal end is 1-5 mm.
44. The power module of claim 43, wherein, The distance between the third part of the pin of the temperature sensor and the bent part of the signal end is not less than 3.3 mm.
45. The power module of claim 25, wherein, The second surface of the first substrate of the packaging structure is exposed from the plastic package, the first surface is opposite to the second surface, the creepage distance between the pin of the temperature sensor and the second surface of the first substrate is not less than 5 mm, and the electrical spacing between the pin of the temperature sensor and the second surface of the first substrate is not less than 2 mm.
46. The power module of claim 25, wherein, The temperature sensor and the pin of the temperature sensor are electrically connected by welding or a bonding wire.
47. The power module of claim 25, wherein, The power device includes an IGBT device and an FRD device, or the power device includes an MOS device, or the power device includes an RC-IGBT device.
48. The power module of claim 25, wherein, The first substrate and the second substrate are DBC ceramic insulating substrates or AMB ceramic insulating substrates.
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