Temperature control assembly and display device

Abstract

The application discloses a temperature control assembly and a display device. The temperature control assembly comprises a substrate, an insulating layer, a temperature control unit and a conductive layer. The insulating layer is arranged on one side of the substrate, and an opening is arranged on the surface of the insulating layer away from the substrate. The temperature control unit is at least partially arranged in the opening. The temperature control unit comprises a first electrode, a second electrode, a first semiconductor block and a second semiconductor block. The first semiconductor block is electrically connected with the first electrode, the second semiconductor block is electrically connected with the second electrode, and the first semiconductor block and the second semiconductor block are arranged in a spaced mode and have different polarities. The conductive layer is electrically connected with the first semiconductor block and the second semiconductor block. In this way, the heat conduction efficiency of the temperature control assembly can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a temperature control assembly and a display device. BACKGROUND

[0002] With the economic development, display panels are applied in automobiles more and more widely. In the long-term research and development process, the applicant of the present application finds that the temperature in the car is too high or too low, which will affect the display of the display panel. Therefore, how to control the temperature of the display panel has become one of the technical problems to be solved at present. SUMMARY

[0003] The technical problem solved by the present application is to provide a temperature control assembly and a display device, which can improve the heat conduction efficiency of the temperature control assembly.

[0004] To solve the above technical problem, one technical solution adopted by the present application is to provide a temperature control assembly, comprising: a substrate; an insulating layer arranged on one side of the substrate, the surface of the insulating layer away from the substrate being provided with an opening; a temperature control unit at least partially arranged in the opening, the temperature control unit comprising a first electrode, a second electrode, a first semiconductor block and a second semiconductor block, the first semiconductor block being electrically connected with the first electrode, the second semiconductor block being electrically connected with the second electrode, the first semiconductor block and the second semiconductor block being arranged in a spaced manner and having different polarities; and a conductive layer electrically connecting the first semiconductor block and the second semiconductor block.

[0005] To solve the above technical problem, another technical solution adopted by the present application is to provide a display device, comprising a display panel and the temperature control assembly according to any one of the above, the temperature control assembly being arranged on the backlight side of the display panel.

[0006] The present application has the following beneficial effects: different from the prior art, in the present application, the first semiconductor block is electrically connected with the first electrode, and the second semiconductor block is electrically connected with the second electrode, which can realize the temperature control function. Meanwhile, the current direction in the temperature control unit is parallel to the substrate, and the heat propagation direction is perpendicular to the substrate, that is, the current direction is perpendicular to the heat propagation direction. This setting can make the path of the current flowing through the first electrode and the second electrode shorter, the heat collection area larger, reduce the joule loss caused by the first electrode and the second electrode, and improve the heat exchange speed. BRIEF DESCRIPTION OF DRAWINGS

[0007] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor. Among them:

[0008] Figure 1 is a structural schematic diagram of an embodiment of the temperature control assembly of the present application;

[0009] Figure 2 is an exploded view of Figure 1 ;

[0010] Figure 3 is a schematic diagram of the arrangement of the first semiconductor block and the second semiconductor block in the plurality of temperature control units in an embodiment;

[0011] Figure 4 is a schematic diagram of the arrangement of the first semiconductor block and the second semiconductor block in the plurality of temperature control units in another embodiment;

[0012] Figure 5 is a schematic diagram of the arrangement of the first semiconductor block, the second semiconductor block and the conductive layer in the plurality of temperature control units in an embodiment;

[0013] Figure 6 is a schematic diagram of the arrangement of the first semiconductor block, the second semiconductor block and the conductive layer in the plurality of temperature control units in another embodiment;

[0014] Figure 7 is a structural schematic diagram of an embodiment of the display device of the present application. DETAILED DESCRIPTION

[0015] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.

[0016] Referring to Figure 1 and Figure 2 , the temperature control assembly 100 comprises a substrate 1, an insulating layer 2, a temperature control unit 3 and a conductive layer 4.

[0017] The insulating layer 2 is arranged on one side of the substrate 1, and the surface of the insulating layer 2 away from the substrate 1 is provided with an opening 21. Specifically, the substrate 1 serves as a carrier and can be a flexible substrate or a rigid substrate, wherein the flexible heat-conductive substrate can be a polyimide composite film material prepared by filling silicon carbide and boron nitride or filling graphene oxide with polyimide. The insulating layer 2 is provided with an opening 21 for accommodating the temperature control unit 3, and the insulating layer 2 has a heat insulation function while being insulated. Specifically, when the temperature control assembly 100 is transmitting heat, the temperature control unit 3 is located in the insulating layer 2, so that the insulating layer 2 can constrain the direction of heat propagation, thereby improving the heat propagation efficiency of the temperature control assembly 100.

[0018] The temperature control unit 3 is at least partially arranged in the opening 21, and the temperature control unit 3 comprises a first electrode 31, a second electrode 32, a first semiconductor block 33 and a second semiconductor block 34, the first semiconductor block 33 is electrically connected with the first electrode 31, the second semiconductor block 34 is electrically connected with the second electrode 32, and the first semiconductor block 33 and the second semiconductor block 34 have different polarities. Meanwhile, the conductive layer 4 electrically connects the second semiconductor block 34 and the first semiconductor block 33.

[0019] Specifically, the conductive layer 4 electrically connects the second semiconductor block 34 and the first semiconductor block 33, so that an electric current channel can be formed between the second semiconductor block 34 and the first semiconductor block 33. The electric current channel between the second semiconductor block 34 and the first semiconductor block 33 is parallel to the substrate 1.

[0020] In this embodiment, the temperature control unit 3 can absorb or release heat. For example, when the first electrode 31 is connected to the positive pole of the power supply and the second electrode 32 is connected to the negative pole of the power supply, the temperature control unit 3 releases heat on the side away from the substrate 1, and absorbs heat on the side close to the substrate 1; when the first electrode 31 is connected to the negative pole of the power supply and the second electrode 32 is connected to the positive pole of the power supply, the temperature control unit 3 absorbs heat on the side away from the substrate 1, and releases heat on the side close to the substrate 1. That is, the heat propagation direction of the temperature control unit 3 is perpendicular to the substrate 1.

[0021] In the scheme of this embodiment, the first semiconductor block 33 is electrically connected with the first electrode 31, and the second semiconductor block 34 is electrically connected with the second electrode 32, so that the temperature control function can be realized, and the current direction in the temperature control unit 3 is parallel to the substrate 1, and the heat propagation direction is perpendicular to the substrate 1, that is, the current direction is perpendicular to the heat propagation direction. This arrangement can make the path of the current flowing through the first electrode 31 and the second electrode 32 shorter, and the heat collection area larger, thereby reducing the joule loss caused by the first electrode 31 and the second electrode 32, and improving the heat exchange speed.

[0022] In an embodiment, the first semiconductor block 33 is an N-type semiconductor block, and the second semiconductor block 34 is a P-type semiconductor block, or the first semiconductor block 33 is a P-type semiconductor block, and the second semiconductor block 34 is an N-type semiconductor block. In summary, the polarity of the first semiconductor block 33 and the second semiconductor block 34 is different.

[0023] Referring to Figure 1 and Figure 2 In an embodiment, the conductive layer 4 is at least located between the first semiconductor block 33 and the second semiconductor block 34, that is, the conductive layer 4 is at least filled in the gap between the first semiconductor block 33 and the second semiconductor block 34, so as to realize the electrical connection between the first semiconductor block 33 and the second semiconductor block 34.

[0024] Continuing to refer toFigure 1 and Figure 2 In order to reduce the transmission impedance and improve the heat conduction efficiency, the conductive layer 4 further extends from between the first semiconductor block 33 and the second semiconductor block 34 to the side of the insulating layer 2 facing away from the substrate 1, so that the first semiconductor block 33 and the second semiconductor block 34 are not only electrically connected with the conductive layer 4 on the side surface, but also electrically connected with the conductive layer 4 on the surface facing away from the substrate 1.

[0025] The conductive layer 4 can be a full-surface continuous film layer, that is, the orthogonal projection of the conductive layer 4 on the substrate 1 covers the substrate 1, or the conductive layer 4 can also be a patterned film layer which is patterned. In summary, as long as the conductive layer 4 can electrically connect the first semiconductor block 33 and the second semiconductor block 34. For example, in other embodiments, the conductive layer 4 can also be located only on the side of the insulating layer 2 facing away from the substrate 1, and the conductive layer 4 is only electrically connected with the surface of the first semiconductor block 33 and the second semiconductor block 34 facing away from the substrate 1, and not located in the gap between the first semiconductor block 33 and the second semiconductor block 34, at this time, the electrical connection between the first semiconductor block 33 and the second semiconductor block 34 can also be realized. Continue to refer to Figure 1 The temperature control assembly 100 further comprises a first heat transfer layer 5 arranged between the substrate 1 and the insulating layer 2. Specifically, the first heat transfer layer 5 can not only block the movement of ions in the first electrode 31 and the second electrode 32 to the substrate 1, but also improve the heat conduction efficiency in the temperature control assembly 100.

[0026] In an embodiment, as shown in Figure 2 The surface of the first heat transfer layer 5 facing the substrate 1 is provided with a first concave-convex structure 51, and the surface of the substrate 1 facing the first heat transfer layer 5 is provided with a second concave-convex structure 11, and the first concave-convex structure 51 and the second concave-convex structure 11 are embedded with each other.

[0027] Specifically, the concave-convex structure increases the surface contact area during heat exchange, that is, the concave-convex structure increases the heat collection area during heat exchange, so that the first concave-convex structure 51 and the second concave-convex structure 11 are embedded with each other, which can increase the heat conduction efficiency between the first heat transfer layer 5 and the substrate 1.

[0028] Continue to refer to Figure 2 In an embodiment, the surface of the first electrode 31 and the second electrode 32 facing the substrate 1 is exposed from the insulating layer 2, the surface of the first electrode 31 / second electrode 32 facing the substrate 1 is provided with a third concave-convex structure 311, and the surface of the first heat transfer layer 5 facing away from the substrate 1 is provided with a fourth concave-convex structure 52, and the third concave-convex structure 311 and the fourth concave-convex structure 52 are embedded with each other.

[0029] Specifically, in an application scenario, the first electrode 31 is provided with a third concave-convex structure 311 facing the surface of the substrate 1, so as to increase the contact area of the first electrode 31 and the first heat transfer layer 5, and further increase the heat conduction efficiency between the first electrode 31 and the first heat transfer layer 5; in another application scenario, the second electrode 32 is provided with a third concave-convex structure 311 facing the surface of the substrate 1, so as to increase the contact area of the second electrode 32 and the first heat transfer layer 5, and further increase the heat conduction efficiency between the second electrode 32 and the first heat transfer layer 5; in still another application scenario, the first electrode 31 and the second electrode 32 are both provided with a third concave-convex structure 311 facing the surface of the substrate 1, so as to increase the contact area of the first electrode 31, the second electrode 32 and the first heat transfer layer 5, and further increase the heat conduction efficiency between the first electrode 31, the second electrode 32 and the first heat transfer layer 5.

[0030] In an embodiment, the material of the first heat transfer layer 5 includes at least one of aluminum oxide, aluminum nitride and boron oxide. Specifically, the material of the first heat transfer layer 5 can be one or more of aluminum oxide, aluminum nitride and boron oxide, for example, the material of the first heat transfer layer 5 can be aluminum oxide, or a mixture of aluminum oxide and aluminum nitride. The application does not limit the material of the first heat transfer layer 5.

[0031] Continuing to refer to Figure 1 , the temperature control assembly 100 further includes a second heat transfer layer 6, which is arranged on the side of the conductive layer 4 away from the substrate 1. Specifically, the second heat transfer layer 6 can block the movement of ions in the conductive layer 4 away from the substrate 1, and can also improve the heat conduction efficiency in the temperature control assembly 100.

[0032] In an embodiment, as shown in Figure 2 , the surface of the conductive layer 4 away from the substrate 1 is provided with a fifth concave-convex structure 41, and the surface of the second heat transfer layer 6 facing the substrate 1 is provided with a sixth concave-convex structure 61. The fifth concave-convex structure 41 and the sixth concave-convex structure 61 are embedded with each other. The arrangement of the concave-convex structure can increase the heat collection area of the conductive layer 4 and the second heat transfer layer 6 during heat exchange, thereby improving the heat conduction efficiency.

[0033] In an embodiment, the material of the second heat transfer layer 6 includes at least one of aluminum oxide, aluminum nitride and boron oxide. Specifically, the material of the second heat transfer layer 6 can be one or more of aluminum oxide, aluminum nitride and boron oxide, for example, the material of the second heat transfer layer 6 can be aluminum nitride, or a mixture of aluminum oxide and aluminum nitride. The application does not limit the material of the second heat transfer layer 6.

[0034] Referring to Figure 2, the first side surface 331 of the first semiconductor block 33 is less than 90 degrees with the substrate 1, and / or the first side surface 331 is an arc surface, wherein the first side surface 331 is the side surface of the first semiconductor block 33 in contact with the first electrode 31, or the first side surface 331 is the side surface of the first semiconductor block 33 in contact with the conductive layer 4.

[0035] Specifically, in an embodiment, the first side surface 331 of the first semiconductor block 33 is a plane, and the first side surface 331 is less than 90 degrees with the substrate 1, that is, the first side surface 331 of the N-type semiconductor is not perpendicular to the substrate 1, wherein when the first side surface 331 is the side surface of the first semiconductor block 33 in contact with the first electrode 31, this arrangement can increase the area of the first semiconductor block 33 in contact with the first electrode 31, thereby increasing the heat collection area, reducing the Joule loss caused by the electrode, and accelerating the speed of heat exchange; when the first side surface 331 is the side surface of the first semiconductor block 33 in contact with the conductive layer 4, this arrangement can increase the side surface area of the first semiconductor block 33 in contact with the conductive layer 4, and also increase the heat collection area and accelerate the speed of heat exchange. In other application scenarios, the side surface of the first semiconductor block 33 in contact with the first electrode 31 and the side surface of the first semiconductor block 33 in contact with the conductive layer 4 are collectively referred to as the first side surface 331, that is, at this time, the side surface of the first semiconductor block 33 in contact with the first electrode 31 and the side surface of the first semiconductor block 33 in contact with the conductive layer 4 are both planes, and the angle between each and the substrate 1 is less than 90 degrees. This arrangement not only increases the side surface area of the first semiconductor block 33 in contact with the first electrode 31, but also increases the side surface area of the first semiconductor block 33 in contact with the conductive layer 4, further increasing the heat collection area, reducing the Joule loss caused by the electrode, and accelerating the speed of heat exchange.

[0036] In another embodiment, the first side surface 331 of the first semiconductor block 33 is an arc surface, that is, the first side surface 331 is a curved surface, wherein when the first side surface 331 is the side surface of the first semiconductor block 33 in contact with the first electrode 31, this arrangement can increase the area of the first semiconductor block 33 in contact with the first electrode 31, increase the heat collection area, reduce the Joule loss caused by the electrode, and accelerate the speed of heat exchange; when the first side surface 331 is the side surface of the first semiconductor block 33 in contact with the conductive layer 4, this arrangement can increase the area of the first semiconductor block 33 in contact with the conductive layer 4, increase the heat collection area, reduce the Joule loss caused by the electrode, and accelerate the speed of heat exchange. In other application scenarios, the side surface of the first semiconductor block 33 in contact with the first electrode 31 and the side surface of the first semiconductor block 33 in contact with the conductive layer 4 are collectively referred to as the first side surface 331, and this arrangement not only increases the area of the first semiconductor block 33 in contact with the first electrode 31, but also increases the area of the first semiconductor block 33 in contact with the conductive layer 4, further increasing the heat collection area, reducing the Joule loss caused by the electrode, and accelerating the speed of heat exchange.

[0037] In other embodiments, the first side surface 331 of the first semiconductor block 33 is curved and is also inclined with respect to the substrate 1, which can further increase the heat collecting area and speed up the heat exchange.

[0038] With reference to the drawings again, Figure 2 , the angle between the second side surface 341 of the second semiconductor block 34 and the substrate 1 is less than 90 degrees, and / or the second side surface 341 is curved, wherein the second side surface 341 is the side surface of the second semiconductor block 34 in contact with the second electrode 32, or the second side surface 341 is the side surface of the second semiconductor block 34 in contact with the conductive layer 4.

[0039] Specifically, in an embodiment, the second side surface 341 of the second semiconductor block 34 is planar, and the angle between the second side surface 341 and the substrate 1 is less than 90 degrees, i.e., the second side surface 341 of the P-type semiconductor is not perpendicular to the substrate 1. When the second side surface 341 is the side surface of the second semiconductor block 34 in contact with the second electrode 32, this arrangement can increase the contact area between the second semiconductor block 34 and the second electrode 32, increase the heat collecting area, reduce the Joule loss caused by the electrode, and speed up the heat exchange. When the second side surface 341 is the side surface of the second semiconductor block 34 in contact with the conductive layer 4, this arrangement can increase the contact area between the second semiconductor block 34 and the conductive layer 4, increase the heat collecting area, reduce the Joule loss caused by the electrode, and speed up the heat exchange. In other application scenarios, the side surface of the second semiconductor block 34 in contact with the second electrode 32 and the side surface of the second semiconductor block 34 in contact with the conductive layer 4 are collectively referred to as the second side surface 341, which not only increases the contact area between the second semiconductor block 34 and the second electrode 32, but also increases the contact area between the second semiconductor block 34 and the conductive layer 4, further increases the heat collecting area, reduces the Joule loss caused by the electrode, and speeds up the heat exchange.

[0040] In another embodiment, the second side surface 341 of the second semiconductor block 34 is arc-shaped, i.e. the second side surface 341 is curved, which can increase the contact area between the second semiconductor block 34 and the second electrode 32, increase the heat collecting area, reduce the Joule loss caused by the electrode, and accelerate the heat exchange speed. When the side surface of the second semiconductor block 34 in contact with the conductive layer 4 is the second side surface 341, this arrangement can increase the side surface area of the second semiconductor block 34 in contact with the conductive layer 4, increase the heat collecting area, reduce the Joule loss caused by the electrode, and accelerate the heat exchange speed. In other application scenarios, the side surface of the second semiconductor block 34 in contact with the second electrode 32 and the side surface of the second semiconductor block 34 in contact with the conductive layer 4 are collectively referred to as the second side surface 341, which can increase the contact area between the second semiconductor block 34 and the second electrode 32 and the contact area between the second semiconductor block 34 and the conductive layer 4, further increase the heat collecting area, reduce the Joule loss caused by the electrode, and accelerate the heat exchange speed.

[0041] In other embodiments, the second side surface 341 of the second semiconductor block 34 is arc-shaped and inclined relative to the substrate 1, which can increase the side surface area of the second semiconductor block 34 in contact with the second electrode 32 and the side surface area of the second semiconductor block 34 in contact with the conductive layer 4.

[0042] In an embodiment, the second semiconductor block 34 and the first semiconductor block 33 can be prepared from a silicon wafer through exposure, development, etching, and ion implantation. The first semiconductor block 33 can be implanted with phosphorus or arsenic, and the second semiconductor block 34 can be implanted with boron or gallium. The second semiconductor block 34 and the first semiconductor block 33 are always combined in pairs.

[0043] In an embodiment, the side wall of the first electrode 31 and the second electrode 32 is at least partially exposed in the opening 21, and the first semiconductor block 33 and the second semiconductor block 34 are arranged in a spaced manner between the first electrode 31 and the second electrode 32. Meanwhile, the first semiconductor block 33 is connected to the side wall of the first electrode 31, and the second semiconductor block 34 is connected to the side wall of the second electrode 32, which can increase the contact area between the first semiconductor block 33 and the first electrode 31 and the contact area between the second semiconductor block 34 and the second electrode 32, thereby improving the heat conduction efficiency.

[0044] In an embodiment, the second semiconductor block 34 and the first semiconductor block 33 are symmetrically arranged about a plane perpendicular to the substrate 1, i.e. the second semiconductor block 34 and the first semiconductor block 33 are symmetric about a plane, which is a plane perpendicular to the substrate 1.

[0045] In another embodiment, the first electrode 31 and the second electrode 32 are symmetrically arranged with respect to a plane perpendicular to the substrate 1, i.e. the first electrode 31 and the second electrode 32 are symmetric with respect to a plane which is perpendicular to the substrate 1.

[0046] In an embodiment, as shown in Figure 1 the second semiconductor block 34 is symmetric with respect to a plane with respect to which the first electrode 31 and the second electrode 32 are symmetric.

[0047] In an embodiment, as shown in Figure 1 and Figure 2 the first electrode 31 and the second electrode 32 are arranged on both sides of the opening 21 and the side walls of the first electrode 31 and the second electrode 32 are exposed from the opening 21. Specifically, at this time, the first electrode 31 and the second electrode 32 are not arranged in the opening 21, but the side walls of the first electrode 31 and the second electrode 32 are exposed from the opening 21. Of course, in other embodiments, part of the first electrode 31 and the second electrode 32 can be arranged in the opening 21, or all of the first electrode 31 and the second electrode 32 can be arranged in the opening 21.

[0048] In an embodiment, the material of the first electrode 31 and the second electrode 32 is the same. The advantage of such an arrangement is that the same material can be used, the same processing technology and equipment can be used for processing, simplifying the process and improving production efficiency. In other embodiments, the materials of the first electrode 31 and the second electrode 32 can be different.

[0049] In an embodiment, the material of the first electrode 31 / second electrode 32 includes at least one of aluminum, titanium, molybdenum, silver and copper. Specifically, the material of the first electrode 31 can be one or more of aluminum, titanium, molybdenum, silver and copper, and the material of the second electrode 32 can be one or more of aluminum, titanium, molybdenum, silver and copper.

[0050] In an embodiment, the material of the insulating layer 2 includes at least one of an organic material and an inorganic material. Specifically, the material of the insulating layer 2 can be an organic material, or an inorganic material, and of course can also be a mixture of an organic material and an inorganic material.

[0051] In an embodiment, the material of the conductive layer 4 includes at least one of aluminum, titanium, molybdenum, silver and copper, and specifically, the material of the conductive layer 4 can be one or more of aluminum, titanium, molybdenum, silver and copper.

[0052] In an embodiment, the insulating layer 2 is provided with a plurality of openings 21, and the number of temperature control units 3 is a plurality, and different temperature control units 3 are formed in different openings 21. Among them, the first electrodes 31 in the plurality of temperature control units 3 are electrically connected, and the second electrodes 32 in the plurality of temperature control units 3 are electrically connected.

[0053] Specifically, the first electrodes 31 of the plurality of temperature control units 3 are electrically connected in a certain rule, and the second electrodes 32 of the plurality of temperature control units 3 are electrically connected in a certain rule, so that the plurality of temperature control units 3 can be supplied with power in parallel, the uniformity of refrigeration and heating is realized, and because the plurality of temperature control units 3 are connected in parallel, even if one of the temperature control units 3 is damaged, it will not affect other temperature control units 3, and the stable performance of the temperature control assembly 100 can be ensured.

[0054] It should be noted that in other embodiments, the plurality of temperature control units 3 can be arranged at intervals in the same opening 21.

[0055] Referring to Figure 3 and Figure 4 , the plurality of temperature control units 3 are arranged in multiple rows and multiple columns to ensure the neatness of the arrangement and reduce the process difficulty of preparation.

[0056] In an embodiment, as shown in Figure 3 , the second semiconductor blocks 34 in each temperature control unit 3 are arranged along the column direction, and the first semiconductor blocks 33 in each temperature control unit 3 are arranged along the column direction. In another embodiment, as shown in Figure 4 , the second semiconductor blocks 34 in each temperature control unit 3 are arranged along the row direction, and the first semiconductor blocks 33 in each temperature control unit 3 are arranged along the row direction. In an embodiment, as shown in Figure 3 and Figure 4 , the first electrodes 31 of the temperature control units 3 in the same row are arranged and electrically connected along the row direction, and the second electrodes 32 are arranged and electrically connected along the row direction. That is, all the first electrodes 31 are connected in a row, and all the second electrodes 32 are connected in a row.

[0057] In an embodiment, as shown in Figure 3 and Figure 4 , the first electrodes 31 and the second electrodes 32 of the plurality of temperature control units 3 are alternately arranged in the column direction. In other embodiments, the first electrodes 31 and the second electrodes 32 of the plurality of temperature control units 3 can also be alternately arranged in the row direction.

[0058] In another embodiment, the plurality of temperature control units 3 can also be connected in series. In order to facilitate the description, two adjacent temperature control units 3 are defined as temperature control unit 3A and temperature control unit 3B, at this time the second semiconductor block 34 in the temperature control unit 3A is electrically connected with the first semiconductor block 33 in the temperature control unit 3B, so that the temperature control unit 3A and the temperature control unit 3B are connected in series.

[0059] In combination with Figure 3 and Figure 5 , when the plurality of temperature control units 3 are connected in series, the first electrodes 31 of the plurality of temperature control units 3 are electrically connected in a certain rule, and the second electrodes 32 of the plurality of temperature control units 3 are electrically connected in a certain rule, so that the plurality of temperature control units 3 can be supplied with power in parallel, the uniformity of refrigeration and heating is realized, and because the plurality of temperature control units 3 are connected in parallel, even if one of the temperature control units 3 is damaged, it will not affect other temperature control units 3, and the stable performance of the temperature control assembly 100 can be ensured. Figure 3When arranged in this manner, the conductive layer 4 can be a patterned structure, which is only disposed between the first semiconductor block 33 and the second semiconductor block 34 in the temperature control unit 3, and the conductive layers 4 in multiple temperature control units 3 are disposed at intervals.

[0060] Similarly, combining Figure 4 as well as Figure 6 When multiple temperature control units 3 are used Figure 4 When arranged in this manner, the conductive layer 4 can also be a patterned structure, which is only disposed between the first semiconductor block 33 and the second semiconductor block 34 in the temperature control unit 3, and the conductive layers 4 in multiple temperature control units 3 are disposed at intervals.

[0061] Of course, regardless of whether multiple temperature control units 3 are used Figure 3 Arranged in the same way, or using Figure 5 In this arrangement, the conductive layer 4 in multiple temperature control units 3 can also be shared. At this time, the conductive layer 4 is a continuous film layer on the whole surface. During the preparation, the conductive layer 4 is formed on the insulating layer 2, and there is no need to pattern the conductive layer 4 on the whole surface afterward.

[0062] See Figure 7 The display device 200 includes a display panel 210 and a temperature control component 100 as described in any of the above embodiments, wherein the temperature control component 100 is disposed on the backlight side of the display panel 210.

[0063] Specifically, when the temperature of the display panel 210 is low, the temperature control component 100 is used to heat up the display panel 210, and when the temperature of the display panel 210 is high, the temperature control component 100 is used to cool down the display panel 210, so that the display panel 210 can maintain normal display at high or low temperatures.

[0064] For example, when the display device 200 is used in a vehicle, if the interior temperature is detected to be higher than a first threshold temperature (e.g., 40 degrees Celsius) in summer, a positive voltage is applied to the first electrode 31 and a reverse voltage is applied to the second electrode 32. The temperature control unit 3 absorbs heat on the side closer to the display panel 210 and releases heat on the side farther from the display panel 210, thereby achieving a cooling effect on the side of the temperature control unit 3 closer to the display panel 210 and lowering the temperature of the display panel 210. If the interior temperature is detected to be lower than a second threshold temperature (e.g., 5 degrees Celsius) in winter, a reverse voltage is applied to the first electrode 31 and a positive voltage is applied to the second electrode 32. The temperature control unit 3 absorbs heat on the side farther from the display panel 210 and releases heat on the side closer to the display panel 210, thereby achieving a heating effect on the side of the temperature control unit 3 closer to the display panel 210 and raising the temperature of the display panel 210.

[0065] Continue reading Figure 7The display panel 210 comprises a driving layer 211 and a light-emitting layer 212 which are sequentially stacked, and the light-emitting layer 212 comprises a plurality of light-emitting units (not shown in the figure), wherein the number of the temperature control units 3 is multiple, and each light-emitting unit corresponds to at least one temperature control unit 3.

[0066] Specifically, one or more temperature control units 3 adjust the temperature of the same light-emitting unit, effectively ensuring the normal operation of the light-emitting unit, thereby ensuring the normal operation of the display panel 210.

[0067] Of course, in other embodiments, one temperature control unit 3 can correspond to multiple light-emitting units, that is, one temperature control unit 3 is used to adjust the temperature of multiple light-emitting units at the same time.

[0068] In an embodiment, continuing to refer to Figure 7 The display panel 210 further comprises an encapsulation layer 213 and a protective layer 214 arranged on the side of the light-emitting layer 212 away from the driving layer 211, the encapsulation layer 213 plays a role of isolating water and oxygen from entering the light-emitting layer 212, and the protective layer 214 plays a role of protecting the display panel 210. The encapsulation layer 213 can be a single-layer structure or a laminated structure, for example, in an application scenario, the encapsulation layer 213 comprises a first inorganic layer, an organic layer and a second inorganic layer which are sequentially stacked.

[0069] In an embodiment, the protective layer 214 comprises a flexible glass plate, so that the display device 200 can be bent. Of course, in other embodiments, the protective layer 214 can also comprise a rigid glass plate, and the material of the protective layer 214 is not limited in the present application.

[0070] The above is only an embodiment of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent process transformation using the content of the present application specification and drawings, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A temperature control assembly, characterized by, The temperature control assembly comprises: a substrate; an insulating layer arranged on one side of the substrate, the insulating layer being provided with an opening on a surface thereof facing away from the substrate; a temperature control unit arranged at least partially in the opening, the temperature control unit comprising a first electrode, a second electrode, a first semiconductor block and a second semiconductor block, the first semiconductor block being electrically connected to the first electrode, the second semiconductor block being electrically connected to the second electrode, the first semiconductor block and the second semiconductor block being arranged apart from each other and having different polarities; a conductive layer electrically connecting the first semiconductor block and the second semiconductor block; wherein side walls of the first electrode and the second electrode are exposed at least in the opening, the first semiconductor block and the second semiconductor block are arranged apart from each other between the first electrode and the second electrode, the first semiconductor block is connected to the side wall of the first electrode, the second semiconductor block is connected to the side wall of the second electrode, and the first electrode and the second electrode are arranged on both sides of the opening and the side walls thereof are exposed from the opening.

2. The temperature-controlled assembly of claim 1, wherein, The temperature control assembly further comprises: a first heat transfer layer arranged between the substrate and the insulating layer.

3. The temperature-controlled assembly of claim 2, wherein, a first concave-convex structure is arranged on a surface of the first heat transfer layer facing the substrate, a second concave-convex structure is arranged on a surface of the substrate facing the first heat transfer layer, and the first concave-convex structure and the second concave-convex structure are embedded in each other.

4. The temperature-controlled assembly of claim 2, wherein, the first electrode and the second electrode are exposed from the insulating layer on a surface thereof facing the substrate, a third concave-convex structure is arranged on a surface of the first electrode / second electrode facing the substrate, a fourth concave-convex structure is arranged on a surface of the first heat transfer layer facing away from the substrate, and the third concave-convex structure and the fourth concave-convex structure are embedded in each other.

5. The temperature-controlled assembly of claim 2, wherein, The material of the first heat transfer layer comprises at least one of aluminum oxide, aluminum nitride and boron oxide.

6. The temperature-controlled assembly of claim 1, wherein, The conductive layer is arranged at least between the first semiconductor block and the second semiconductor block.

7. The temperature-controlled assembly of claim 6, wherein, The conductive layer further extends from between the first semiconductor block and the second semiconductor block to a side of the insulating layer facing away from the substrate.

8. The temperature-controlled assembly of claim 6, wherein, A normal projection of the conductive layer on the substrate covers a normal projection of the insulating layer on the substrate.

9. The temperature-controlled assembly of claim 6, wherein, The temperature control assembly further comprises: a second heat transfer layer arranged on a side of the conductive layer facing away from the substrate.

10. The temperature-controlled assembly of claim 9, wherein, a fifth concave-convex structure is arranged on a surface of the conductive layer facing away from the substrate, a sixth concave-convex structure is arranged on a surface of the second heat transfer layer facing the substrate, and the fifth concave-convex structure and the sixth concave-convex structure are embedded in each other.

11. The temperature-controlled assembly of claim 9, wherein, The material of the second heat transfer layer comprises at least one of aluminum oxide, aluminum nitride and boron oxide.

12. The temperature-controlled assembly of claim 1, wherein, An included angle between a first side surface of the first semiconductor block and the substrate is less than 90 degrees, and / or the first side surface is a curved surface, wherein the first side surface is a side surface of the first semiconductor block in contact with the first electrode, or the first side surface is a side surface of the first semiconductor block in contact with the conductive layer. And / or, an included angle between a second side surface of the second semiconductor block and the substrate is less than 90 degrees, and / or, the second side surface is an arc surface, wherein the second side surface is a side surface of the second semiconductor block in contact with the second electrode, or the second side surface is a side surface of the second semiconductor block in contact with the conductive layer.

13. The temperature-controlled assembly of claim 1, wherein, The first semiconductor block is an N-type semiconductor block, and the second semiconductor block is a P-type semiconductor block.

14. The temperature-controlled assembly of claim 13, wherein, The first electrode and the second electrode are made of the same material.

15. The temperature-controlled assembly of claim 13, wherein, The material of the first electrode / the second electrode includes at least one of aluminum, titanium, molybdenum, silver, and copper.

16. The temperature-controlled assembly of claim 13, wherein, The material of the insulating layer includes at least one of an organic material and an inorganic material.

17. The temperature-controlled assembly of claim 13, wherein, The material of the conductive layer includes at least one of aluminum, titanium, molybdenum, silver, and copper.

18. The temperature control assembly according to claim 1, wherein, The insulating layer is provided with a plurality of openings, and a plurality of temperature control units are formed in different openings, wherein the first electrodes of the plurality of temperature control units are electrically connected, and the second electrodes of the plurality of temperature control units are electrically connected.

19. The temperature-controlled assembly of claim 18, wherein, The plurality of temperature control units are arranged in multiple rows and multiple columns.

20. The temperature-controlled assembly of claim 19, wherein, The second semiconductor blocks in each temperature control unit are arranged along a column direction, the first semiconductor blocks in each temperature control unit are arranged along a column direction, or the second semiconductor blocks in each temperature control unit are arranged along a row direction, and the first semiconductor blocks in each temperature control unit are arranged along a row direction.

21. The temperature-controlled assembly of claim 19, wherein, The first electrodes of the temperature control units in the same row are arranged and electrically connected along a row direction, and the second electrodes of the temperature control units in the same row are arranged and electrically connected along a row direction.

22. The temperature-controlled assembly of claim 21, wherein, The first electrodes and the second electrodes of the plurality of temperature control units are alternately arranged in a column direction, or the first electrodes and the second electrodes of the plurality of temperature control units are alternately arranged in a row direction.

23. A display device comprising: The display panel includes a driving layer and a light-emitting layer which are sequentially stacked, and the light-emitting layer includes a plurality of light-emitting units, wherein the number of temperature control units is a plurality, and each of the light-emitting units corresponds to at least one temperature control unit.

24. The display device of claim 23, wherein, The display panel further includes an encapsulation layer and a protective layer disposed on a side of the light-emitting layer away from the driving layer.

25. The display device of claim 24, wherein, The protective layer includes a flexible glass plate.

26. The display device of claim 25, wherein, ​

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