Pixel structure, display panel and display device

Abstract

Provided are a pixel structure, a display panel, and a display device, belonging to the field of display technology. In the pixel structure, the light-emitting drive circuit can drive the light-emitting device to emit light under the control of a scan signal, a data signal, and a pull-down power supply signal. The photoelectric sensing circuit can control the on-off of the photosensitive device and the photoelectric sensing line under the control of a scan signal, a reset control signal, a reset power supply signal, and a sensing drive signal to realize photoelectric sensing. Based on this structure, the transistors in the pixel structure can all be N-type transistors, which can make the pixel structure simple and the cost low. In addition, because the first pole of the light-emitting device is connected to the pull-down power supply line through the light-emitting drive circuit, the first pole of the light-emitting device and the second pole of the photosensitive device are connected to the same drive power supply line, that is, the light-emitting device is an inverted structure. In this way, it is also possible to prevent the parasitic capacitance / resistance in the light-emitting device from affecting the photosensitivity characteristics of the photosensitive device, thereby ensuring better accuracy of photoelectric sensing.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a pixel structure, a display panel, and a display device. Background Art

[0002] With the development of display technology, the pixel structure in the current display panel often integrates light-emitting functions and photoelectric sensing functions. In other words, it can not only emit light to enable the display panel to display images, but also perform photoelectric sensing to realize the recognition of biometric information (such as fingerprints).

[0003] Currently, pixel structures with the above-mentioned functions typically include a light-emitting driver and a photoelectric sensing component. The light-emitting driver includes multiple light-emitting driver transistors and light-emitting devices. The multiple light-emitting driver transistors are used to drive the light-emitting devices to emit light under the control of signals provided by the connected signal lines. The photoelectric sensing component includes multiple photoelectric sensing transistors and photosensitive devices. The multiple photoelectric sensing transistors are used to collect electrical information from the photosensitive devices under the control of signals provided by the connected signal lines to achieve photoelectric sensing. Furthermore, the multiple photoelectric sensing transistors and the multiple photoelectric sensing transistors generally include P-type transistors and N-type transistors.

[0004] However, the current pixel structure with the above functions is not only complex in structure but also has poor sensing accuracy. Summary of the Invention

[0005] The embodiments of the present disclosure provide a pixel structure, a display panel, and a display device that can solve the problems of complex pixel structures and poor sensing accuracy in related technologies. The technical solution is as follows:

[0006] In one aspect, a pixel structure is provided, comprising: a light-emitting driving circuit, a photoelectric sensing circuit, a light-emitting device, and a photosensitive device;

[0007] The light-emitting driving circuit is respectively connected to a first scan line, a data signal line, a pull-down power line, and a first electrode of the light-emitting device, and a second electrode of the light-emitting device is connected to a driving power line. The light-emitting driving circuit is configured to transmit a light-emitting driving signal to the first electrode of the light-emitting device in response to a first scan signal provided by the first scan line, a data signal provided by the data signal line, and a pull-down power signal provided by the pull-down power line, so as to control the light-emitting device to emit light based on the light-emitting driving signal and the driving power signal provided by the driving power line.

[0008] The photoelectric sensing circuit is respectively connected to the second scan line, the first reset control line, the first reset power line, the sensing drive line, the photoelectric sensing line and the first pole of the photosensitive device, and the second pole of the photosensitive device is connected to the driving power line. The photoelectric sensing circuit is used to control the connection and disconnection of the first reset power line and the first pole of the photosensitive device in response to the first reset control signal provided by the first reset control line, and is used to control the connection and disconnection of the first pole of the photosensitive device and the photoelectric sensing line in response to the second scan signal provided by the second scan line and the sensing drive signal provided by the sensing drive line, so as to realize photoelectric sensing.

[0009] Optionally, the photoelectric sensing circuit includes:

[0010] a first reset sub-circuit, connected to the first reset control line, the first reset power line, and the first sensing node, respectively, and configured to control the connection and disconnection between the first reset power line and the first sensing node in response to the first reset control signal;

[0011] an amplifying sub-circuit, connected to the sensing drive line, the first sensing node, and the second sensing node, respectively, and configured to control the connection and disconnection between the sensing drive line and the second sensing node in response to the potential of the first sensing node;

[0012] an output sub-circuit, connected to the second scan line, the second sensing node, and the photoelectric sensing line, respectively, and configured to control the connection and disconnection between the second sensing node and the photoelectric sensing line in response to the second scan signal;

[0013] Furthermore, the first sensing node is connected to the first electrode of the photosensitive device.

[0014] Optionally, the first reset sub-circuit includes: a reset transistor;

[0015] A gate of the reset transistor is connected to the first reset control line, a first electrode of the reset transistor is connected to the first reset power line, and a second electrode of the reset transistor is connected to the first sensing node.

[0016] Optionally, the amplifying sub-circuit includes: an amplifying transistor;

[0017] A gate of the amplifying transistor is connected to the first sensing node, a first electrode of the amplifying transistor is connected to the sensing driving line, and a second electrode of the amplifying transistor is connected to the second sensing node.

[0018] Optionally, the output sub-circuit includes: an output transistor;

[0019] A gate of the output transistor is connected to the second scan line, a first electrode of the output transistor is connected to the second sensing node, and a second electrode of the output transistor is connected to the photoelectric sensing line.

[0020] Optionally, the photosensitive device includes: a photosensitive diode, and a photosensitive capacitor connected between the positive electrode and the negative electrode of the photosensitive diode;

[0021] Furthermore, the first electrode of the photosensitive device is the anode of the photosensitive diode, and the second electrode of the photosensitive device is the cathode of the photosensitive diode.

[0022] Optionally, the light emitting device includes: an organic light emitting diode;

[0023] Furthermore, the first electrode of the light-emitting device is the cathode of the organic light-emitting diode, and the second electrode of the light-emitting device is the anode of the organic light-emitting diode.

[0024] Optionally, the light-emitting driving circuit is also respectively connected to the second reset control line, the second reset power line, the third reset control line, the initial power line and the light-emitting control line, and is used to transmit a light-emitting driving signal to the first pole of the light-emitting device in response to the first scan signal, the data signal, the pull-down power signal, the second reset control signal provided by the second reset control line, the second reset power signal provided by the second reset power line, the third reset control signal provided by the third reset control line, the initial power signal provided by the initial power line and the light-emitting control signal provided by the light-emitting control line.

[0025] Optionally, the second scan line is shared with the first scan line; the first reset control line is shared with the third reset control line; and / or the first reset power line is shared with the second reset power line.

[0026] Optionally, the light-emitting driving circuit includes:

[0027] a data writing sub-circuit, connected to the first scan line, the data signal line and the first driving node respectively, and configured to control the connection and disconnection between the data signal line and the first driving node in response to the first scan signal;

[0028] a second reset sub-circuit, connected to the second reset control line, the second reset power line, the third reset control line, the initial power line, the first drive node, the second drive node, and the third drive node, respectively, and configured to control the connection and disconnection between the second reset power line and the first drive node, and the connection and disconnection between the second reset power line and the second drive node, in response to the second reset control signal, and to control the connection and disconnection between the initial power line and the third drive node, in response to the third reset control signal;

[0029] a light emitting control subcircuit, connected to the light emitting control line, the third driving node, and the fourth driving node, respectively, and configured to control the on / off switching of the fourth driving node and the third driving node in response to the light emitting control signal;

[0030] a light-emitting driving sub-circuit, connected to the first driving node, the fourth driving node, and the fifth driving node, respectively, and configured to transmit the light-emitting driving signal to the fourth driving node based on the potential of the first driving node and the potential of the fifth driving node;

[0031] a regulating subcircuit, connected to the first driving node, the second driving node, and the fifth driving node, respectively, and configured to regulate the potential of the first driving node, the potential of the second driving node, and the potential of the fifth driving node;

[0032] Furthermore, the third driving node is connected to the first electrode of the light emitting device, and the fifth driving node is connected to the pull-down power line.

[0033] Optionally, the data writing subcircuit includes: a first transistor; the second reset subcircuit includes: a second transistor, a third transistor, and a fourth transistor; the light emitting control subcircuit includes: a fifth transistor; the light emitting drive subcircuit includes: a sixth transistor; the regulating subcircuit includes: a first capacitor and a second capacitor;

[0034] The gate of the first transistor is connected to the first scan line, the first electrode of the first transistor is connected to the data signal line, and the second electrode of the first transistor is connected to the first driving node;

[0035] The gate of the second transistor is connected to the second reset control line, the first electrode of the second transistor is connected to the second reset power line, and the second electrode of the second transistor is connected to the first driving node;

[0036] The gate of the third transistor is connected to the second reset control line, the first electrode of the third transistor is connected to the second reset power line, and the second electrode of the third transistor is connected to the second driving node;

[0037] The gate of the fourth transistor is connected to the third reset control line, the first electrode of the fourth transistor is connected to the initial power line, and the second electrode of the fourth transistor is connected to the third driving node;

[0038] The gate of the fifth transistor is connected to the light emitting control line, the first electrode of the fifth transistor is connected to the fourth driving node, and the second electrode of the fifth transistor is connected to the third driving node;

[0039] The gate of the sixth transistor is connected to the first driving node, the first electrode of the sixth transistor is connected to the fifth driving node, and the second electrode of the sixth transistor is connected to the fourth driving node;

[0040] One end of the first capacitor is connected to the first driving node, and the other end of the first capacitor is connected to the second driving node;

[0041] One end of the second capacitor is connected to the second driving node, and the other end of the second capacitor is connected to the fifth driving node.

[0042] Optionally, the transistors included in the light-emitting driving circuit and the transistors included in the photoelectric sensing circuit are both N-type transistors.

[0043] Optionally, the pixel structure includes: a bottom gate metal layer, an active layer, a top gate metal layer, a source / drain metal layer, an insulating layer, and a pixel defining layer stacked in sequence, wherein the pixel defining layer has a plurality of defining openings spaced apart from each other;

[0044] The light-emitting device and the photosensitive device are located in different defined openings, and the first and second electrodes of the light-emitting device are sequentially stacked in a direction close to the insulating layer, and the first and second electrodes of the photosensitive device are sequentially stacked in a direction away from the insulating layer;

[0045] The driving power line and the source-drain metal layer are located in the same layer, and the first pole and the second pole of the light-emitting device are respectively connected to the source-drain metal layer and the driving power line in the light-emitting driving circuit through different vias passing through the insulating layer, and the first pole and the second pole of the photosensitive device are respectively connected to the source-drain metal layer and the driving power line in the photoelectric sensing circuit through different vias passing through the insulating layer.

[0046] On the other hand, a display panel is provided, comprising: a substrate, and a plurality of pixel structures as described in the above aspect located on one side of the substrate.

[0047] In another aspect, a display device is provided, comprising: a power supply component, and the display panel as described in the above another aspect;

[0048] The power supply component is connected to the display panel and is used to supply power to the display panel.

[0049] In summary, the beneficial effects brought about by the technical solution provided by the present disclosure may include at least:

[0050] A pixel structure, a display panel, and a display device are provided. The pixel structure includes a light-emitting drive circuit, a photoelectric sensing circuit, a light-emitting device, and a photosensitive device. The light-emitting drive circuit can drive the light-emitting device to emit light under the control of a scan signal, a data signal, and a pull-down power signal. The photoelectric sensing circuit can control the on-off connection between the photosensitive device and the photoelectric sensing line under the control of a scan signal, a reset control signal, a reset power signal, and a sensing drive signal to achieve photoelectric sensing. Based on this structure, the transistors in the pixel structure can all be N-type transistors, making the pixel structure simple and low-cost. In addition, because the first electrode of the light-emitting device is connected to the pull-down power line through the light-emitting drive circuit, the first electrode of the light-emitting device and the second electrode of the photosensitive device are connected to the same drive power line, that is, the light-emitting device can be an inverted structure. In this way, it is also possible to prevent the parasitic capacitance / resistance in the light-emitting device from affecting the photosensitivity characteristics of the photosensitive device, thereby ensuring good accuracy of photoelectric sensing. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0052] Figure 1 is a schematic block diagram of a pixel structure provided by an embodiment of the present disclosure;

[0053] Figure 2 is a schematic block diagram of another pixel structure provided by an embodiment of the present disclosure;

[0054] Figure 3 is a schematic block diagram of another pixel structure provided by an embodiment of the present disclosure;

[0055] Figure 4 is a schematic block diagram of another pixel structure provided by an embodiment of the present disclosure;

[0056] Figure 5 is a schematic circuit diagram of a pixel structure provided by an embodiment of the present disclosure;

[0057] Figure 6 This is a signal timing diagram corresponding to a pixel structure provided by an embodiment of the present disclosure;

[0058] Figure 7 is a schematic diagram of a portion of a film layer of a pixel structure provided by an embodiment of the present disclosure;

[0059] Figure 8 is a schematic block diagram of a display panel provided by an embodiment of the present disclosure;

[0060] Figure 9 It is a schematic block diagram of a display device provided by an embodiment of the present disclosure. DETAILED DESCRIPTION

[0061] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0062] It is understood that the transistors used in all embodiments of the present disclosure can be thin-film transistors, field-effect transistors, or other devices with similar characteristics. Based on their function in the circuit, the transistors used in the embodiments of the present disclosure are primarily switching transistors. Since the source and drain of the switching transistors used here are symmetrical, their source and drain are interchangeable. The source is referred to as the first electrode and the drain is referred to as the second electrode, or the drain is referred to as the first electrode and the source is referred to as the second electrode. According to the form in the accompanying drawings, the middle end of the transistor is defined as the gate, the signal input end is defined as the source, and the signal output end is defined as the drain. In addition, the switching transistors used in the embodiments of the present disclosure may include any one of a P-type transistor and an N-type transistor, or a combination thereof. A P-type transistor is turned on when the gate voltage is low and turned off when the gate voltage is high, while an N-type transistor is turned on when the gate voltage is high and turned off when the gate voltage is low. In addition, multiple signals in each embodiment correspond to a first potential and a second potential. The first potential and the second potential merely represent that the potential of the signal has two different state quantities and do not mean that the first potential or the second potential has a specific value.

[0063] Currently, pixel structures with both light-emitting and photoelectric sensing functions are mostly low-temperature polycrystalline silicon oxide (LTPO) structures. Specifically, the transistors in the pixel structure include P-type transistors made of low-temperature polycrystalline silicon (LTPS) and N-type transistors made of oxide materials. The material here refers to the material of the transistor's active layer. However, this LTPO structure is not only expensive but also large in size, making it difficult to achieve narrow bezels.

[0064] In addition, in the current pixel structure described above, the common layer containing the cathode in the light-emitting device is reused with the photosensitive device. For example, in the context where the light-emitting device includes an organic light-emitting diode (OLED) and the photosensitive device includes a photosensitive diode VD, the cathode of the organic light-emitting diode OLED and the negative electrode of the photosensitive diode VD are connected to the same pull-down power supply terminal VSS. In this way, the presence of parasitic capacitance / resistance in the common layer will affect the photosensitivity effect, causing the dark current output to the photosensitive device to increase, that is, affecting the photosensitivity characteristics of the photosensitive device, thereby causing the accuracy of the electrical information collected by the photoelectric sensing circuit 02 to be poor, affecting the accuracy of photoelectric sensing (also known as photosensitivity measurement). Among them, dark current refers to the current flowing through the photosensitive device in the dark state. Correspondingly, it can also be known that the current flowing through the photosensitive device when illuminated can be called photocurrent.

[0065] Based on this, the embodiment of the present disclosure provides a pixel structure that is not only small in size and low in cost, but also can solve the problem of parasitic capacitance / resistance affecting the accuracy of photoelectric sensing, that is, it can also ensure good accuracy of photoelectric sensing. Figure 1 As shown, the pixel structure includes: a light-emitting driving circuit 01, a photoelectric sensing circuit 02, a light-emitting device 03 and a photosensitive device 04.

[0066] The light-emitting driver circuit 01 is connected to the first scan line Gate1, the data signal line Vdata, the pull-down power line VSS, and the first electrode of the light-emitting device 03, respectively. The second electrode of the light-emitting device 03 is connected to the driving power line VDD. In response to the first scan signal provided by the first scan line Gate1, the data signal provided by the data signal line Vdata, and the pull-down power signal provided by the pull-down power line VSS, the light-emitting driver circuit 01 transmits a light-emitting driver signal to the first electrode of the light-emitting device 03, thereby controlling the light-emitting device 03 to emit light based on the light-emitting driver signal and the driving power signal provided by the driving power line VDD. For example, the light-emitting device 03 can emit light in response to the voltage difference between the light-emitting driver signal transmitted by the light-emitting driver circuit 01 and the driving power signal.

[0067] Photoelectric sensing circuit 02 is connected to second scan line Gate2, first reset control line Reset1, first reset power line Vref1, sensing drive line VT, photoelectric sensing line OSL, and the first electrode of photosensor 04. The second electrode of photosensor 04 is connected to driving power line VDD. Photoelectric sensing circuit 02 is configured to control the connection between first reset power line Vref1 and the first electrode of photosensor 04 in response to a first reset control signal provided by first reset control line Reset1. Furthermore, photoelectric sensing circuit 02 is configured to control the connection between the first reset power line Vref1 and the first electrode of photosensor 04 in response to a second scan signal provided by second scan line Gate2 and a sensing drive signal provided by sensing drive line VT, thereby achieving photoelectric sensing.

[0068] For example, the photoelectric sensing circuit 02 can control the first reset power line Vref1 to be connected to the first pole of the photosensitive device 04 when the potential of the first reset control signal provided by the first reset control line Reset1 is a first potential, so that the first reset power signal provided by the first reset power line Vref1 is transmitted to the first pole of the photosensitive device 04 to reset the first pole of the photosensitive device 04; and the photoelectric sensing circuit 02 can control the first reset power line Vref1 to be disconnected from the first pole of the photosensitive device 04 when the potential of the first reset control signal provided by the first reset control line Reset1 is a second potential.

[0069] For example, the photoelectric sensing circuit 02 can control the first electrode of the photosensitive device 04 to be electrically connected to the photoelectric sensing line OSL under the control of the second scan signal provided by the second scan line Gate2 and the sensing drive signal provided by the sensing drive line VT, so as to collect an electrical signal (e.g., a current signal) from the first electrode of the photosensitive device 04 through the photoelectric sensing line OSL to implement photoelectric sensing. Furthermore, the photoelectric sensing circuit 02 can control the first electrode of the photosensitive device 04 to be disconnected from the photoelectric sensing line OSL under the control of the second scan signal provided by the second scan line Gate2 and the sensing drive signal provided by the sensing drive line VT, thereby stopping photoelectric sensing.

[0070] Alternatively, in some embodiments, the photoelectric sensing line OSL may be connected to a photoelectric sensing unit having a photoelectric sensing function, and the photoelectric sensing unit may implement photoelectric sensing based on an electrical signal transmitted by the photoelectric sensing line OSL. For example, the photoelectric sensing unit may be a driver integrated circuit (IC).

[0071] Optionally, in the embodiment of the present disclosure, the first potential may be an effective potential, the second potential may be an ineffective potential, and the first potential may be a higher potential relative to the second potential, that is, the first potential of the effective potential may be a high potential, and the second potential of the ineffective potential may be a low potential. Of course, in some other embodiments, the first potential may also be a lower potential relative to the second potential.

[0072] Furthermore, the potential of the driving power signal provided by the driving power line VDD can be a high potential, and the potential of the pull-down power signal provided by the pull-down power line VSS can be a low potential. Based on this, it can be seen that the light-emitting device 03 has an inverted structure. That is, unlike the traditional light-emitting device 03, where the anode serves as the first electrode and is connected to the driving power line VDD through the light-emitting driving circuit 01, and the cathode of the light-emitting device 03 serves as the second electrode and is connected to the pull-down power line VSS, in the disclosed embodiment, the cathode of the light-emitting device 03 can serve as the first electrode and be connected to the pull-down power line VSS through the light-emitting driving circuit 01, and the anode of the light-emitting device 03 can serve as the second electrode and be connected to the driving power line VDD. In other words, the anode and cathode of the light-emitting device 03 can be interchangeable. Thus, by setting the anode (or positive electrode) of the photosensitive device 04 as the first electrode and connected to the photoelectric sensing circuit 02, and setting the cathode (or negative electrode) of the photosensitive device 04 as the second electrode and connected to the driving power line VDD, the light-emitting device 03 and the photosensitive device 04 no longer share a common layer containing a cathode. Furthermore, the problem of parasitic capacitance / resistance in the common layer affecting the photoelectric sensing accuracy can be avoided, thereby ensuring better photoelectric sensing accuracy. The photosensitive device 04 in this structure can be considered to be in a reverse bias state all the time.

[0073] It is understood that before the light emitted by the light-emitting device 03 is irradiated by a medium such as a user's finger and reflected into the photosensitive device 04, minority carriers still exist, which is the dark current described above. However, in the disclosed embodiment, because the photoelectric sensing circuit 02 can also reset the first electrode of the photosensitive device 04, the photoelectric sensing circuit 02 can be configured to reset the first electrode of the photosensitive device 04 before performing photoelectric sensing to ensure a constant dark current in the photosensitive device 04, thereby further ensuring that the electrical information collected by the photoelectric sensing circuit 02 is more accurate, thereby improving the accuracy of photoelectric sensing.

[0074] Optionally, in some embodiments, the light-emitting driving circuit 01 may also be referred to as a pixel driving circuit or a pixel circuit. The material of the photoelectric sensing circuit 02 may include organic materials. Accordingly, the photoelectric sensing circuit 02 may also be referred to as an organic photodetector (OPD). That is, the pixel structure provided in the embodiment of the present disclosure may include a pixel circuit and an OPD circuit. Figure 1 As can be seen from the foregoing description, the pixel structure provided by the embodiments of the present disclosure connects to fewer signal lines. Furthermore, based on this structure, all transistors in the pixel structure can be configured as N-type transistors, i.e., the pixel circuit and OPD circuit are configured as all-N-type circuits, without P-type transistors. This not only reduces costs and simplifies the structure, but also reduces circuit size, facilitating a narrow-frame design for the display panel.

[0075] In summary, the embodiment of the present disclosure provides a pixel structure, which includes a light-emitting drive circuit, a photoelectric sensing circuit, a light-emitting device and a photosensitive device. Among them, the light-emitting drive circuit can drive the light-emitting device to emit light under the control of a scan signal, a data signal and a pull-down power signal. The photoelectric sensing circuit can control the on and off of the photosensitive device and the photoelectric sensing line under the control of a scan signal, a reset control signal, a reset power signal and a sensing drive signal to realize photoelectric sensing. Based on this structure, the transistors in the pixel structure can all be N-type transistors, so that the structure of the pixel structure is simple and the cost is low. In addition, because the first pole of the light-emitting device is connected to the pull-down power line through the light-emitting drive circuit, the first pole of the light-emitting device and the second pole of the photosensitive device are connected to the same drive power line, that is, the light-emitting device can be an inverted structure. In this way, it is also possible to avoid the parasitic capacitance / resistance in the light-emitting device from affecting the photosensitivity characteristics of the photosensitive device, thereby ensuring better accuracy of photoelectric sensing.

[0076] Optionally, refer to Figure 1 It can be seen that the photosensitive device 04 described in the embodiment of the present disclosure may include: a photosensitive diode VD, and a photosensitive capacitor Co connected between the positive and negative electrodes of the photosensitive diode VD. Here, the photosensitive capacitor Co refers to the capacitance of the photosensitive diode VD itself, so it is called a photosensitive capacitor.

[0077] Furthermore, the first electrode of the photosensitive device 04 may be the anode of the photosensitive diode VD, and the second electrode of the photosensitive device 04 may be the cathode of the photosensitive diode VD. The photosensitive diode VD is also called an optical sensor.

[0078] Optionally, continue to refer to Figure 1 It can be seen that the light emitting device 03 described in the embodiment of the present disclosure may include: an organic light emitting diode OLED.

[0079] Furthermore, the first electrode of the light-emitting device 03 may be the cathode of the organic light-emitting diode OLED, and the second electrode of the light-emitting device 03 may be the anode of the organic light-emitting diode OLED.

[0080] Thus, it can be further determined that the light emitting device 03 in the embodiment of the present disclosure is an inverted OLED. The cathode of the OLED and the anode of the photodiode VD can be connected to the same driving power line VDD.

[0081] Optionally, Figure 2 FIG. 1 is a schematic block diagram of another pixel structure provided by an embodiment of the present disclosure. Figure 2 As shown, the photoelectric sensing circuit 02 may include: a first reset sub-circuit 021 , an amplifying sub-circuit 022 and an output sub-circuit 023 .

[0082] The first reset sub-circuit 021 can be connected to the first reset control line Reset1, the first reset power line Vref1, and the first sensing node P1, respectively. The first reset sub-circuit 021 can be configured to control the connection between the first reset power line Vref1 and the first sensing node P1 in response to a first reset control signal. Furthermore, the first sensing node P1 can be connected to the first electrode of the photosensitive device 04.

[0083] For example, the first reset sub-circuit 021 can control the first reset power line Vref1 to be connected to the first sensing node P1 when the potential of the first reset control signal is the first potential, so that the first reset power signal provided by the first reset power line Vref1 is transmitted to the first sensing node P1 to achieve resetting of the first sensing node P1 (i.e., the first pole of the photosensitive device 04); and the first reset sub-circuit 021 can control the first reset power line Vref1 to be disconnected from the first sensing node P1 when the potential of the first reset control signal is the second potential.

[0084] Optionally, in conjunction with the foregoing description, the first reset subcircuit 021 may control the transmission of a first reset power signal to the first electrode of the photosensitive device 04 before performing photoelectric sensing, so as to reset the potential of the first electrode of the photosensitive device 04, thereby maintaining the potential of the upper and lower electrode plates of the photosensitive device 04 consistent, thereby ensuring that the dark current flowing through the photosensitive device 04 remains constant, thereby ensuring better photoelectric sensing accuracy. The upper and lower electrode plates of the photosensitive device 04 may refer to the upper and lower plates of the photosensitive capacitor Co in the photosensitive device 04, with the upper plate connected to the negative electrode of the photosensitive diode VD in the photosensitive device 04, and the lower plate connected to the positive electrode of the photosensitive diode VD in the photosensitive device 04.

[0085] The amplifier sub-circuit 022 can be connected to the sensing driving line VT, the first sensing node P1, and the second sensing node P2, respectively. The amplifier sub-circuit 022 can be used to control the connection between the sensing driving line VT and the second sensing node P2 in response to the potential of the first sensing node P1.

[0086] For example, the amplifier sub-circuit 022 can control the sensing drive line VT to be connected to the second sensing node P2 when the potential of the first sensing node P1 (i.e., the potential of the first electrode of the photosensitive device 04) is a first potential, so that the sensing drive signal provided by the sensing drive line VT is transmitted to the second sensing node P2; and the amplifier sub-circuit 022 can control the sensing drive line VT to be disconnected from the second sensing node P2 when the potential of the first sensing node P1 is a second potential.

[0087] It is understandable that the amplifying sub-circuit 022 can cooperate with the first resetting sub-circuit 021 to write the photocurrent and dark current flowing through the photosensitive device 04 into the second sensing node P2.

[0088] The output sub-circuit 023 can be connected to the second scan line Gate2, the second sensing node P2 and the photoelectric sensing line OSL respectively and can be used to control the connection between the second sensing node P2 and the photoelectric sensing line OSL in response to the second scan signal.

[0089] For example, when the potential of the second scanning signal is the first potential, the output sub-circuit 023 can control the second sensing node P2 to be connected to the photoelectric sensing line OSL, so that the photocurrent and dark current written to the second sensing node P2 are further transmitted to the photoelectric sensing line OSL, and then transmitted to the photoelectric sensing part similar to the driver IC through the photoelectric sensing line OSL, so that the photoelectric sensing part determines the potential difference of the first electrode of the photosensitive device 04 under the photocurrent and dark current by comparing the photocurrent and the dark current, thereby realizing photoelectric sensing.

[0090] Optionally, Figure 3 This is a schematic block diagram of another pixel structure provided by an embodiment of the present disclosure. Figure 3 As shown, the light-emitting driving circuit 01 can also be connected to the second reset control line Reset2, the second reset power line Vref2, the third reset control line Reset3, the initial power line Vinit and the light-emitting control line EM, respectively, and can be used to transmit a light-emitting driving signal to the first pole of the light-emitting device 03 in response to the first scan signal, the data signal, the pull-down power signal, the second reset control signal provided by the second reset control line Reset2, the second reset power signal provided by the second reset power line Vref2, the third reset control signal provided by the third reset control line Reset3, the initial power signal provided by the initial power line Vinit and the light-emitting control signal provided by the light-emitting control line EM.

[0091] Optionally, in Figure 3 On the basis of Figure 4 FIG. 1 shows a schematic block diagram of another pixel structure provided by an embodiment of the present disclosure. Figure 4 As shown, the light-emitting driving circuit 01 may include: a data writing sub-circuit 011 , a second resetting sub-circuit 012 , a light-emitting control sub-circuit 013 , a light-emitting driving sub-circuit 014 and a regulating sub-circuit 015 .

[0092] The data writing sub-circuit 011 can be connected to the first scan line Gate1, the data signal line Vdata and the first driving node N1 respectively, and can be used to control the connection and disconnection of the data signal line Vdata and the first driving node N1 in response to the first scan signal.

[0093] For example, the data writing sub-circuit 011 can control the data signal line Vdata to be connected to the first driving node N1 when the potential of the first scanning signal is the first potential, so that the data signal provided by the data signal line Vdata is transmitted to the first driving node N1; and the data writing sub-circuit 011 can control the data signal line Vdata to be disconnected from the first driving node N1 when the potential of the first scanning signal is the second potential.

[0094] The second reset sub-circuit 012 can be connected to the second reset control line Reset2, the second reset power line Vref2, the third reset control line Reset3, the initial power line Vinit, the first drive node N1, the second drive node N2, and the third drive node N3, respectively. The second reset sub-circuit 012 is configured to control the connection and disconnection between the second reset power line Vref2 and the first drive node N1, and the connection and disconnection between the second reset power line Vref2 and the second drive node N2, in response to a second reset control signal. Furthermore, the second reset sub-circuit 012 can be configured to control the connection and disconnection between the initial power line Vinit and the third drive node N3, in response to a third reset control signal.

[0095] For example, the second reset sub-circuit 012 can control the second reset power line Vref2 to be conductive with both the first driving node N1 and the second driving node N2 when the potential of the second reset control signal is the first potential, so that the second reset power signal provided by the second reset power line Vref2 is transmitted to the first driving node N1 and the second driving node N2, so as to reset the first driving node N1 and the second driving node N2; and the second reset sub-circuit 012 can control the second reset power line Vref2 to be disconnected from both the first driving node N1 and the second driving node N2 when the potential of the second reset control signal is the second potential.

[0096] Similarly, the second reset sub-circuit 012 can control the initial power line Vinit to be connected to the third driving node N3 when the potential of the third reset control signal is the first potential, so that the initial power signal provided by the initial power line Vinit is transmitted to the third driving node N3 to reset the third driving node N3; and the second reset sub-circuit 012 can control the initial power line Vinit to be disconnected from the third driving node N3 when the potential of the third reset control signal is the second potential.

[0097] The light emitting control subcircuit 013 can be connected to the light emitting control line EM, the third driving node N3 and the fourth driving node N4 respectively. The light emitting control subcircuit 013 can be used to control the connection and disconnection of the fourth driving node N4 and the third driving node N3 in response to the light emitting control signal.

[0098] For example, the light-emitting control sub-circuit 013 can control the fourth driving node N4 and the third driving node N3 to be connected when the potential of the light-emitting control signal is a first potential, so that the signal transmitted to the fourth driving node N4 is further transmitted to the third driving node N3; and the light-emitting control sub-circuit 013 can control the fourth driving node N4 to be disconnected from the third driving node N3 when the potential of the light-emitting control signal is a second potential.

[0099] The light-emitting driver subcircuit 014 can be connected to the first drive node N1, the fourth drive node N4, and the fifth drive node N5, respectively. The light-emitting driver subcircuit 014 can be configured to transmit a light-emitting drive signal to the fourth drive node N4 based on the potential of the first drive node N1 and the potential of the fifth drive node N5. Furthermore, the third drive node N3 can be connected to the first electrode of the light-emitting device 03 (e.g., the cathode of the organic light-emitting diode OLED), and the fifth drive node N5 can be connected to the pull-down power line VSS.

[0100] Thus, when the light-emitting control sub-circuit 013 controls the fourth driving node N4 and the third driving node N3 to be conductive, the light-emitting driving signal transmitted by the light-emitting driving sub-circuit 014 to the fourth driving node N4 can be further transmitted to the third driving node N3, that is, transmitted to the first electrode of the light-emitting device 03. Furthermore, the light-emitting device 03 can emit light under the voltage difference between the light-emitting driving signal and the driving power signal provided by the driving power line VDD connected to the second electrode.

[0101] The regulating subcircuit 015 can be connected to the first driving node N1, the second driving node N2 and the fifth driving node N5 respectively. The regulating subcircuit 015 can be used to regulate the potential of the first driving node N1, the potential of the second driving node N2 and the potential of the fifth driving node N5.

[0102] For example, the regulating sub-circuit 015 can regulate the potentials of the first driving node N1 , the second driving node N2 , and the fifth driving node N5 through coupling.

[0103] Optionally, in Figure 4 On the basis of Figure 5 FIG. 1 shows a circuit diagram of a pixel structure provided by an embodiment of the present disclosure. Figure 5As shown, in this pixel structure, the first reset subcircuit 021 may include a reset transistor ST1. The amplification subcircuit 022 may include an amplification transistor ST2. The output subcircuit 023 may include an output transistor ST3. The data write subcircuit 011 may include a first transistor T1. The second reset subcircuit 012 may include a second transistor T2, a third transistor T3, and a fourth transistor T4. The light emission control subcircuit 013 may include a fifth transistor T5. The light emission drive subcircuit 014 may include a sixth transistor T6 (also referred to as a drive transistor). The regulation subcircuit 015 may include a first capacitor C1 and a second capacitor C2.

[0104] Among them, the gate of the reset transistor ST1 can be connected to the first reset control line Reset1, the first electrode of the reset transistor ST1 can be connected to the first reset power line Vref1, and the second electrode of the reset transistor ST1 can be connected to the first sensing node P1 (that is, the positive electrode of the photosensitive diode VD).

[0105] A gate of the amplifying transistor ST2 may be connected to the first sensing node P1 , a first electrode of the amplifying transistor ST2 may be connected to the sensing driving line VT, and a second electrode of the amplifying transistor ST2 may be connected to the second sensing node P2 .

[0106] A gate of the output transistor ST3 may be connected to the second scan line Gate2 , a first electrode of the output transistor ST3 may be connected to the second sensing node P2 , and a second electrode of the output transistor ST3 may be connected to the photo sensing line OSL.

[0107] A gate of the first transistor T1 may be connected to the first scan line Gate1 , a first electrode of the first transistor T1 may be connected to the data signal line Vdata, and a second electrode of the first transistor T1 may be connected to the first driving node N1 .

[0108] A gate of the second transistor T2 may be connected to the second reset control line Reset2 , a first electrode of the second transistor T2 may be connected to the second reset power line Vref2 , and a second electrode of the second transistor T2 may be connected to the first driving node N1 .

[0109] A gate of the third transistor T3 may be connected to the second reset control line Reset2 , a first electrode of the third transistor T3 may be connected to the second reset power line Vref2 , and a second electrode of the third transistor T3 may be connected to the second driving node N2 .

[0110] A gate of the fourth transistor T4 may be connected to the third reset control line Reset3 , a first electrode of the fourth transistor T4 may be connected to the initial power line Vinit, and a second electrode of the fourth transistor T4 may be connected to the third driving node N3 .

[0111] A gate electrode of the fifth transistor T5 may be connected to the light emission control line EM, a first electrode of the fifth transistor T5 may be connected to the fourth driving node N4, and a second electrode of the fifth transistor T5 may be connected to the third driving node N3.

[0112] A gate of the sixth transistor T6 may be connected to the first driving node N1 , a first electrode of the sixth transistor T6 may be connected to the fifth driving node N5 , and a second electrode of the sixth transistor T6 may be connected to the fourth driving node N4 .

[0113] One end of the first capacitor C1 may be connected to the first driving node N1 , and the other end of the first capacitor C1 may be connected to the second driving node N2 .

[0114] One end of the second capacitor C2 may be connected to the second driving node N2 , and the other end of the second capacitor C2 may be connected to the fifth driving node N5 .

[0115] Optionally, combined Figure 5 and Figure 6 It can also be seen that in the embodiment of the present disclosure, the second scan line Gate2 can be shared with the first scan line Gate1, the first reset control line Reset1 can be shared with the third reset control line Reset3, and / or the first reset power line Vref1 can be shared with the second reset power line Vref2. That is, the second scan line Gate2 connected to the output sub-circuit 023 (i.e., output transistor ST3) in the photoelectric sensing circuit 02 can be the first scan line Gate1 connected to the data write sub-circuit 011 (i.e., first transistor T1) in the light-emitting driver circuit 01; the first reset control line Reset1 connected to the first reset sub-circuit 021 (i.e., reset transistor ST1) in the photoelectric sensing circuit 02 can be the third reset control line Reset3 connected to the second reset sub-circuit 012 (i.e., fourth transistor T4) in the light-emitting driver circuit 01; and / or the first reset power line Vref1 connected to the first reset sub-circuit 021 (i.e., reset transistor ST1) in the photoelectric sensing circuit 02 can be the second reset power line Vref2 connected to the second reset sub-circuit 012 (i.e., second transistor T2) in the light-emitting driver circuit 01. This simplifies wiring, further reduces circuit complexity, and thus facilitates simplified manufacturing processes.

[0116] Optionally, the shared first reset power line Vref1 and the second reset power line Vref2 can also be referred to as a reference power line. Furthermore, the potential of the power signal provided by the reference power line can be slightly lower than the potential of the driving power signal provided by the driving power line VDD. In this way, it can be ensured that the photosensitive device 04 remains in a reverse biased state. In addition, in some embodiments, the reference power line Vref1 and the second reset power line Vref2 can be referred to as a reference power line. Figure 5 and Figure 6It can also be seen that the sensing driving line VT may also be the initial power line Vinit0 which is the same as the initial power line Vinit connected to the light emitting driving circuit 01 .

[0117] It should be noted that, given that each transistor in the pixel structure is an N-type transistor, the potential of the power signal provided by the initial power line Vinit0 connected to the photoelectric sensing circuit 02 can be low, and the potential of the power signal provided by the initial power line Vinit0 can be slightly lower than the potential of the power signal provided by the reference power line (i.e., the first reset power line Vref1 / the second reset power line Vref2). This ensures that the negative bias of the threshold voltage Vth of the amplifier transistor ST2 included in the amplifier sub-circuit 022 is reduced when it is in a long-term on state, that is, the threshold voltage Vth is relatively stable, thereby ensuring reliable output of an electrical signal to the photoelectric sensing line OSL, further ensuring good photoelectric sensing accuracy. The potential of the initial power signal provided by the initial power line Vinit connected to the light-emitting drive circuit 01 can be high, and the potential of the initial power signal provided by the initial power line Vinit can be slightly higher than the potential of the drive power signal provided by the drive power line VDD. This ensures reliable resetting of the third drive node N3 (i.e., the first electrode of the light-emitting device 03), preventing the light-emitting device 03 from erroneously emitting light during the reset phase.

[0118] Optionally, refer to Figure 5 It can also be seen that the transistors included in the light-emitting drive circuit 01 (i.e., the first transistor T1 to the sixth transistor T6) and the transistors included in the photoelectric sensing circuit 02 (i.e., the reset transistor ST1, the amplifying transistor ST2, and the output transistor ST3) can all be N-type transistors. In other words, the circuit structure of the pixel structure described in the embodiment of the present disclosure can be a circuit structure with all N-type transistors. This can simplify the structure and facilitate narrow frame design.

[0119] Optionally, continue to refer to Figure 5 It can be seen that in the embodiment of the present disclosure, the light-emitting drive circuit 01 can be a circuit with a 6T2C structure (i.e., including 6 transistors and 2 capacitors); the photoelectric sensing circuit 02 can be a circuit with a 3T structure (i.e., including 3 transistors). Based on this structure, the flexibility of the layout design can be improved. At the same time, on the basis of sharing signal lines, the circuit complexity can be greatly reduced, which is conducive to simplifying the process technology. The pixel structure provided in the embodiment of the present disclosure can be applied to medium and large-sized display products. Of course, in some other embodiments, the light-emitting drive circuit 01 can also be a circuit with other structures, which is not limited in the embodiment of the present disclosure.

[0120] Optionally, Figure 5 Take the structure shown as an example, Figure 6Shows a signal timing diagram (it can be understood that Figure 6 It only schematically shows the timing of some signal lines connected to the pixel structure).

[0121] Combine Figure 6 , the driving principle of the pixel structure is briefly described as follows:

[0122] In phase t01, the potential of the light-emitting control signal provided by the light-emitting control line EM and the potential of the first scanning signal provided by the first scanning line Gate1 can both be low, while the potential of the first reset control signal provided by the first reset control line Reset1 and the potential of the second reset control signal provided by the second reset control line Reset2 can both be high. Furthermore, because the first scanning line Gate1 and the second scanning line Gate2 are shared, the potential of the second scanning signal provided by the second scanning line Gate2 is also low. Furthermore, because the first reset control line Reset1 and the third reset control line Reset3 are shared, the potential of the third reset control signal provided by the third reset control line Reset3 is also high.

[0123] Accordingly, the first transistor T1 and the fifth transistor T5 in the light-emitting driver circuit 01, as well as the output transistor ST3 in the photoelectric sensing circuit 02, are all turned off, while the second transistor T2, the third transistor T3, and the fourth transistor T4 in the light-emitting driver circuit 01, as well as the reset transistor ST1 in the photoelectric sensing circuit 02, are all turned on. Furthermore, the first reset power signal provided by the first reset power line Vref1 can be transmitted via the turned-on reset transistor ST1 to the first sensing node P1, that is, to the anode of the photosensitive diode VD, thereby resetting the anode of the photosensitive diode VD and turning off the amplifier transistor ST2 in the photoelectric sensing circuit 02. The second reset power signal provided by the second reset power line Vref2 can be transmitted via the turned-on second transistor T2 and the turned-on third transistor T3 to the first driving node N1 and the second driving node N2, respectively, thereby resetting the first driving node N1 and the second driving node N2 and turning off the sixth transistor T6 in the light-emitting driver circuit 01. Because the first reset power line Vref1 and the second reset power line Vref2 share a common voltage, the reset power signal transmitted to the anode of the photodiode VD, or the first drive node N1, and the second drive node N2, have the same potential. Furthermore, the initial power signal provided by the initial power line Vinit is transmitted via the turned-on fourth transistor T4 to the third drive node N3, that is, to the cathode of the organic light-emitting diode OLED, thereby resetting the cathode of the organic light-emitting diode OLED.

[0124] At stage t02, the potential of the first reset control signal provided by the first reset control line Reset1 and the potential of the first scan signal provided by the first scan line Gate1 can both be low, while the potential of the second reset control signal provided by the second reset control line Reset2 and the potential of the light-emission control signal provided by the light-emission control line EM can both be high. Furthermore, because the first scan line Gate1 and the second scan line Gate2 are shared, the potential of the second scan signal provided by the second scan line Gate2 is also low. Furthermore, because the first reset control line Reset1 and the third reset control line Reset3 are shared, the potential of the third reset control signal provided by the third reset control line Reset3 is also low.

[0125] Accordingly, the first transistor T1 and the fourth transistor T4 in the light-emitting driver circuit 01, as well as the reset transistor ST1 and the output transistor ST3 in the photoelectric sensing circuit 02, can all be turned off, while the first transistor T1, the second transistor T2, the third transistor T3, and the fifth transistor T5 in the light-emitting driver circuit 01 can all be turned on. Furthermore, the second reset power supply signal provided by the second reset power supply line Vref2 can be continuously transmitted to the first driving node N1 and the second driving node N2 via the turned-on second transistor T2 and the third transistor T3, thereby resetting the first driving node N1 and the second driving node N2. Furthermore, the signal transmitted to the fourth driving node N4 can be further transmitted to the third driving node N3 via the turned-on fifth transistor T5.

[0126] At stage t03, the potential of the first reset control signal provided by the first reset control line Reset1 can be low, while the potential of the first scan signal provided by the first scan line Gate1, the potential of the second reset control signal provided by the second reset control line Reset2, and the potential of the light-emitting control signal provided by the light-emitting control line EM can all be high. Furthermore, because the first scan line Gate1 and the second scan line Gate2 are shared, the potential of the second scan signal provided by the second scan line Gate2 is also high. Furthermore, because the first reset control line Reset1 and the third reset control line Reset3 are shared, the potential of the third reset control signal provided by the third reset control line Reset3 is also low.

[0127] Accordingly, the fourth transistor T4 in the light-emitting driver circuit 01 and the reset transistor ST1 in the photoelectric sensing circuit 02 are both turned off, while the first transistor T1, second transistor T2, third transistor T3, and fifth transistor T5 in the light-emitting driver circuit 01, as well as the output transistor ST3 in the photoelectric sensing circuit 02, are all turned on. Furthermore, the second reset power supply signal provided by the second reset power supply line Vref2 can be continuously transmitted to the first driving node N1 and the second driving node N2 via the turned-on second transistor T2 and third transistor T3, thereby resetting the first driving node N1 and the second driving node N2. The data signal provided by the data signal line Vdata can be transmitted to the first driving node N1 via the turned-on first transistor T1. The signal transmitted to the fourth driving node N4 can be further transmitted to the third driving node N3 via the turned-on fifth transistor T5. Furthermore, the signal transmitted to the second sensing node P2 can be further transmitted to the photoelectric sensing line OSL via the turned-on output transistor ST3, thereby achieving photoelectric sensing.

[0128] At stage t04, the potential of the first reset control signal provided by the first reset control line Reset1, the potential of the first scan signal provided by the first scan line Gate1, and the potential of the second reset control signal provided by the second reset control line Reset2 can all be low, while the potential of the light-emission control signal provided by the emission control line EM can all be high. Furthermore, because the first scan line Gate1 and the second scan line Gate2 are shared, the potential of the second scan signal provided by the second scan line Gate2 is also low. Furthermore, because the first reset control line Reset1 and the third reset control line Reset3 are shared, the potential of the third reset control signal provided by the third reset control line Reset3 is also low.

[0129] Accordingly, the first transistor T1, the second transistor T2, the third transistor T3, and the fourth transistor T4 in the light-emitting driving circuit 01, as well as the reset transistor ST1 and the output transistor ST3 in the photoelectric sensing circuit 02, are all turned off, and the fifth transistor T5 in the light-emitting driving circuit 01 is turned on. Furthermore, the signal transmitted to the fourth driving node N4 is transmitted to the third driving node N3 via the turned-on fifth transistor T5, thereby driving the organic light-emitting diode OLED to emit light.

[0130] That is, as described above, the transistor ST1 in the photoelectric sensing circuit 02 can be a reset transistor for resetting the first electrode of the photosensitive device 04 before performing photoelectric sensing. Based on resetting the first electrode of the photosensitive device 04, the potentials of the upper and lower electrode plates of the photosensitive device 04 can be kept consistent, ensuring the constant dark current of the photosensitive device 04. The transistor ST2 in the photoelectric sensing circuit 02 can be an amplifying transistor, similar to the driving transistor in the light-emitting driving circuit 01 (that is, Figure 5 The sixth transistor T6 shown in the figure can cooperate with the reset transistor ST1 to realize the input of photocurrent and dark current. Finally, the dark current and photocurrent can be compared through the output transistor ST3 in the photoelectric sensing circuit O2, thereby realizing photoelectric sensing.

[0131] Optionally, Figure 7 The diagram also schematically shows a partial film layer diagram of a pixel structure, which includes a light-emitting device 03, a fifth transistor T5 connected to the light-emitting device 03, a photosensitive device 04, and a reset transistor ST1 connected to the photosensitive device 04.

[0132] refer to Figure 7 It can be seen that the pixel structure may include: a bottom-gate metal layer G1, an active layer Ac1, a top-gate metal layer G2, a source & drain metal layer SD, an insulating layer J1 and a pixel definition layer (PDL) stacked in sequence, and the pixel definition layer PDL may have a plurality of defined openings K0 spaced apart from each other.

[0133] The light-emitting device 03 and the photosensitive device 04 can be located in different defined openings K0. The first and second electrodes of the light-emitting device 03 can be stacked sequentially in a direction approaching the insulating layer J1, while the first and second electrodes of the photosensitive device 04 can be stacked sequentially in a direction away from the insulating layer J1. That is, the light-emitting device 03 can include an anode, a light-emitting layer, and a cathode stacked sequentially in a direction away from the insulating layer J1. The anode is the second electrode of the light-emitting device 03, and the cathode is the first electrode of the light-emitting device 03. The photosensitive device 04 can include an anode, a light-emitting layer, and a cathode stacked sequentially in a direction away from the insulating layer J1. The anode is the first electrode of the photosensitive device 04, also known as the positive electrode of the photodiode; the cathode is the second electrode of the photosensitive device 04, also known as the negative electrode of the photodiode. Furthermore, the fifth transistor T5 and the reset transistor ST1 can respectively include a bottom gate metal layer G1, an active layer Ac1, a top gate metal layer G2, and a source / drain metal layer SD. The driving power line VDD can be located on the same layer as the source / drain metal layer SD. It is understood that being in the same layer can refer to a layer structure formed by forming a film layer with a specific pattern using the same film-forming process, and then patterning the film layer using the same mask through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the resulting layer structure may be continuous or discontinuous. In other words, multiple elements, components, structures, and / or parts located in the "same layer" are composed of the same material and formed through the same patterning process. This can simplify the manufacturing process and save manufacturing costs.

[0134] Correspondingly, such as Figure 7 As shown, the first electrode and the second electrode of the light-emitting device 03 can be respectively connected to the source-drain metal layer SD and the driving power line VDD in the light-emitting driving circuit 01 through different vias K1 penetrating the insulating layer J1, and the first electrode and the second electrode of the photosensitive device 04 can be respectively connected to the source-drain metal layer and the driving power line VDD in the photoelectric sensing circuit 02 through different vias K1 penetrating the insulating layer J1.

[0135] In conjunction with the foregoing, for light-emitting device 03, the cathode of the organic light-emitting diode OLED in light-emitting device 03 may be connected to the source-drain metal layer SD of the fifth transistor T5 in light-emitting driver circuit 01 via a via K1 penetrating insulating layer J1, thereby establishing a connection with the fifth transistor T5. Furthermore, the anode of the organic light-emitting diode OLED in light-emitting device 03 may be connected to the drive power line VDD located on the same layer as the source-drain metal layer SD via a via K1 penetrating insulating layer J1, thereby establishing a connection with the drive power line VDD. For photosensitive device 04, the cathode of the photosensitive diode VD in light-sensitive device 04 may be connected to the drive power line VDD located on the same layer as the source-drain metal layer SD via a via K1 penetrating insulating layer J1, thereby establishing a connection with the drive power line VDD. Furthermore, the anode of the photosensitive diode VD in light-sensitive device 04 may be connected to the source-drain metal layer SD of the reset transistor ST1 in photoelectric sensing circuit 02 via a via K1 penetrating insulating layer J1, thereby establishing a connection with the reset transistor ST1.

[0136] Optionally, the insulating layer J1 may include a planar layer, an etching protection layer, and an inorganic material layer. Furthermore, the pixel structure may further include a substrate 10. Each of the above layers may be located on one side of the substrate 10 and stacked sequentially in a direction away from the substrate 10. The substrate 10 may be a glass substrate or a flexible substrate, which is not limited in the present embodiment. Figure 7 The structure shown is an inverted structure.

[0137] That is, in the embodiment of the present disclosure, if Figure 7 As shown, the driving power line VDD can be set in the source and drain metal layer SD. In addition, in the light-emitting driving circuit 01, the metal material M1 in the same layer as the anode can be etched to form Figure 7 The eaves structure shown in FIG. 1 is used to connect the cathode of the organic light emitting diode OLED to the fifth transistor T5. Similarly, in the photoelectric sensing circuit 02, the metal material M1 in the same layer as the anode can be etched to form a Figure 7 The eaves structure shown is used to connect the cathode of the photodiode VD to the reset transistor ST1. The cathode of the photodiode VD can finally be connected to the first reset power line Vref1 through the reset transistor ST1 to receive the first reset power signal provided by the first reset power line Vref1.

[0138] Optionally, combined Figure 7In some embodiments, because the anodes of adjacent organic light-emitting diodes (OLEDs) are connected to the drive power line VDD, the drive power line VDD can be configured as a grid structure, effectively reducing the resistance on the drive power line VDD and ensuring that the drive power line VDD reliably provides the required drive power signal. Similarly, because the cathode of the photodiode VD and the anode of the organic light-emitting diode OLED are connected to the same drive power line VDD, the drive power line VDD connected to the photodiode VD can also be designed as a grid to reliably reduce the resistance on the drive power line VDD.

[0139] As can be seen from the foregoing, the pixel structure provided by the embodiments of the present disclosure can be an all-N-type circuit structure, which is simple and low-cost. Furthermore, the organic light-emitting diode (OLED) in this pixel structure can be an inverted structure, which can solve the problem of parasitic capacitance / resistance in the organic light-emitting diode (OLED) affecting photoelectric sensing, ensuring better photoelectric sensing accuracy.

[0140] In summary, the embodiment of the present disclosure provides a pixel structure, which includes a light-emitting drive circuit, a photoelectric sensing circuit, a light-emitting device and a photosensitive device. Among them, the light-emitting drive circuit can drive the light-emitting device to emit light under the control of a scan signal, a data signal and a pull-down power signal. The photoelectric sensing circuit can control the on and off of the photosensitive device and the photoelectric sensing line under the control of a scan signal, a reset control signal, a reset power signal and a sensing drive signal to realize photoelectric sensing. Based on this structure, the transistors in the pixel structure can all be N-type transistors, so that the structure of the pixel structure is simple and the cost is low. In addition, because the first pole of the light-emitting device is connected to the pull-down power line through the light-emitting drive circuit, the first pole of the light-emitting device and the second pole of the photosensitive device are connected to the same drive power line, that is, the light-emitting device can be an inverted structure. In this way, it is also possible to avoid the parasitic capacitance / resistance in the light-emitting device from affecting the photosensitivity characteristics of the photosensitive device, thereby ensuring better accuracy of photoelectric sensing.

[0141] The present disclosure also provides a display panel. Figure 8 As shown, the display panel includes: a substrate 10, and a plurality of Figures 1 to 5 Any of the pixel structures 00 shown.

[0142] It is understandable that since the display panel can have substantially the same technical effects as the pixel structure described in the previous embodiment, the technical effects of the display panel will not be repeatedly described here for the purpose of brevity.

[0143] The present disclosure also provides a display device. Figure 9 As shown, the display device includes: a power supply component 100, and Figure 8 Display panel 000 is shown.

[0144] The power supply component 100 is connected to the display panel 000 and is used to supply power to the display panel 000 .

[0145] Optionally, the display device may be an OLED display device or an active-matrix organic light-emitting diode (AMOLED) display device, etc. OLED display technology has been widely recognized by the market due to its advantages such as high resolution and high contrast.

[0146] Optionally, the display device may also include: any product or component with a display function, such as a mobile phone, a tablet computer, a flexible display device, a television, and a monitor.

[0147] It is understandable that since the display device can have substantially the same technical effects as the pixel structure described in the previous embodiment, the technical effects of the display device will not be repeatedly described here for the purpose of brevity.

[0148] It is also understood that the terms used in the examples of this disclosure are only used to explain the examples and are not intended to limit the present disclosure. Unless otherwise defined, technical terms or scientific terms used in the embodiments of this disclosure should have the same common meaning as those understood by persons of ordinary skill in the art to which this disclosure belongs.

[0149] For example, the words "first", "second" or "third" and similar words used in the patent application specification and claims of this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components.

[0150] When we say an element is "connected" or "connected" to another element, it can be directly connected or connected to the other element, or intermediate elements may exist. In addition, "connected" or "connected" used herein may include wireless connection or wireless connection.

[0151] Likewise, the words “a” or “an” and the like do not denote a limitation of quantity, but rather denote the presence of at least one.

[0152] Words such as “include” or “comprising” mean that the elements or objects preceding “include” or “comprising” include the elements or objects listed after “include” or “comprising” and their equivalents, and do not exclude other elements or objects.

[0153] “Up,” “down,” “left,” or “right” are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0154] The above description is merely an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A pixel structure, characterized in that: The pixel structure includes: a light-emitting driving circuit, a photoelectric sensing circuit, a light-emitting device and a photosensitive device; The light-emitting driving circuit is respectively connected to a first scan line, a data signal line, a pull-down power line, and a first electrode of the light-emitting device, and a second electrode of the light-emitting device is connected to a driving power line. The light-emitting driving circuit is configured to transmit a light-emitting driving signal to the first electrode of the light-emitting device in response to a first scan signal provided by the first scan line, a data signal provided by the data signal line, and a pull-down power signal provided by the pull-down power line, so as to control the light-emitting device to emit light based on the light-emitting driving signal and the driving power signal provided by the driving power line. The photoelectric sensing circuit is respectively connected to the second scan line, the first reset control line, the first reset power line, the sensing drive line, the photoelectric sensing line, and the first electrode of the photosensitive device, and the second electrode of the photosensitive device is connected to the driving power line. The photoelectric sensing circuit is used to control the connection and disconnection between the first reset power line and the first electrode of the photosensitive device in response to a first reset control signal provided by the first reset control line, and is used to control the connection and disconnection between the first electrode of the photosensitive device and the photoelectric sensing line in response to a second scan signal provided by the second scan line and a sensing drive signal provided by the sensing drive line, so as to achieve photoelectric sensing; Wherein, the photosensitive device includes: a photosensitive diode, and a photosensitive capacitor connected between the positive electrode and the negative electrode of the photosensitive diode; the light-emitting device includes: an organic light-emitting diode; Furthermore, the first electrode of the photosensitive device is the anode of the photosensitive diode, and the second electrode of the photosensitive device is the cathode of the photosensitive diode; the first electrode of the light-emitting device is the cathode of the organic light-emitting diode, and the second electrode of the light-emitting device is the anode of the organic light-emitting diode; In addition, the pixel structure includes: a bottom gate metal layer, an active layer, a top gate metal layer, a source-drain metal layer, an insulating layer and a pixel definition layer stacked in sequence, and the pixel definition layer has a plurality of defined openings spaced apart from each other; the light-emitting device and the photosensitive device are located in different defined openings, and the first pole and the second pole of the light-emitting device are stacked in sequence in a direction close to the insulating layer, and the first pole and the second pole of the photosensitive device are stacked in sequence in a direction away from the insulating layer; the driving power line and the source-drain metal layer are located in the same layer, and the first pole and the second pole of the light-emitting device are respectively connected to the source-drain metal layer and the driving power line in the light-emitting driving circuit through different vias passing through the insulating layer, and the first pole and the second pole of the photosensitive device are respectively connected to the source-drain metal layer and the driving power line in the photoelectric sensing circuit through different vias passing through the insulating layer.

2. The pixel structure according to claim 1, wherein: The photoelectric sensing circuit includes: a first reset sub-circuit, connected to the first reset control line, the first reset power line, and the first sensing node, respectively, and configured to control the connection and disconnection between the first reset power line and the first sensing node in response to the first reset control signal; an amplifying sub-circuit, connected to the sensing drive line, the first sensing node, and the second sensing node, respectively, and configured to control the connection and disconnection between the sensing drive line and the second sensing node in response to the potential of the first sensing node; an output sub-circuit, connected to the second scan line, the second sensing node, and the photoelectric sensing line, respectively, and configured to control the connection and disconnection between the second sensing node and the photoelectric sensing line in response to the second scan signal; Furthermore, the first sensing node is connected to the first electrode of the photosensitive device.

3. The pixel structure according to claim 2, wherein: The first reset sub-circuit includes: a reset transistor; A gate of the reset transistor is connected to the first reset control line, a first electrode of the reset transistor is connected to the first reset power line, and a second electrode of the reset transistor is connected to the first sensing node.

4. The pixel structure according to claim 2, wherein: The amplifying sub-circuit includes: an amplifying transistor; A gate of the amplifying transistor is connected to the first sensing node, a first electrode of the amplifying transistor is connected to the sensing driving line, and a second electrode of the amplifying transistor is connected to the second sensing node.

5. The pixel structure according to claim 2, wherein: The output sub-circuit includes: an output transistor; A gate of the output transistor is connected to the second scan line, a first electrode of the output transistor is connected to the second sensing node, and a second electrode of the output transistor is connected to the photoelectric sensing line.

6. The pixel structure according to any one of claims 1 to 5, characterized in that: The light-emitting drive circuit is also respectively connected to the second reset control line, the second reset power line, the third reset control line, the initial power line and the light-emitting control line, and is used to transmit a light-emitting drive signal to the first pole of the light-emitting device in response to the first scan signal, the data signal, the pull-down power signal, the second reset control signal provided by the second reset control line, the second reset power signal provided by the second reset power line, the third reset control signal provided by the third reset control line, the initial power signal provided by the initial power line and the light-emitting control signal provided by the light-emitting control line.

7. The pixel structure according to claim 5, wherein: The second scan line is shared with the first scan line; the first reset control line is shared with the third reset control line; and / or the first reset power line is shared with the second reset power line.

8. The pixel structure according to claim 5, wherein: The light-emitting driving circuit includes: a data writing sub-circuit, connected to the first scan line, the data signal line and the first driving node respectively, and configured to control the connection and disconnection between the data signal line and the first driving node in response to the first scan signal; a second reset sub-circuit, connected to the second reset control line, the second reset power line, the third reset control line, the initial power line, the first drive node, the second drive node, and the third drive node, respectively, and configured to control the connection and disconnection between the second reset power line and the first drive node, and the connection and disconnection between the second reset power line and the second drive node, in response to the second reset control signal, and to control the connection and disconnection between the initial power line and the third drive node, in response to the third reset control signal; a light emitting control subcircuit, connected to the light emitting control line, the third driving node, and the fourth driving node, respectively, and configured to control the on / off switching of the fourth driving node and the third driving node in response to the light emitting control signal; a light-emitting driving sub-circuit, connected to the first driving node, the fourth driving node, and the fifth driving node, respectively, and configured to transmit the light-emitting driving signal to the fourth driving node based on the potential of the first driving node and the potential of the fifth driving node; a regulating subcircuit, connected to the first driving node, the second driving node, and the fifth driving node, respectively, and configured to regulate the potential of the first driving node, the potential of the second driving node, and the potential of the fifth driving node; Furthermore, the third driving node is connected to the first electrode of the light emitting device, and the fifth driving node is connected to the pull-down power line.

9. The pixel structure according to claim 8, wherein: The data writing subcircuit includes: a first transistor; the second reset subcircuit includes: a second transistor, a third transistor and a fourth transistor; the light emitting control subcircuit includes: a fifth transistor; the light emitting drive subcircuit includes: a sixth transistor; the regulating subcircuit includes: a first capacitor and a second capacitor; The gate of the first transistor is connected to the first scan line, the first electrode of the first transistor is connected to the data signal line, and the second electrode of the first transistor is connected to the first driving node; The gate of the second transistor is connected to the second reset control line, the first electrode of the second transistor is connected to the second reset power line, and the second electrode of the second transistor is connected to the first driving node; The gate of the third transistor is connected to the second reset control line, the first electrode of the third transistor is connected to the second reset power line, and the second electrode of the third transistor is connected to the second driving node; The gate of the fourth transistor is connected to the third reset control line, the first electrode of the fourth transistor is connected to the initial power line, and the second electrode of the fourth transistor is connected to the third driving node; The gate of the fifth transistor is connected to the light emitting control line, the first electrode of the fifth transistor is connected to the fourth driving node, and the second electrode of the fifth transistor is connected to the third driving node; The gate of the sixth transistor is connected to the first driving node, the first electrode of the sixth transistor is connected to the fifth driving node, and the second electrode of the sixth transistor is connected to the fourth driving node; One end of the first capacitor is connected to the first driving node, and the other end of the first capacitor is connected to the second driving node; One end of the second capacitor is connected to the second driving node, and the other end of the second capacitor is connected to the fifth driving node.

10. The pixel structure according to any one of claims 1 to 5, characterized in that: The transistors included in the light-emitting driving circuit and the transistors included in the photoelectric sensing circuit are both N-type transistors.

11. A display panel, characterized in that: The display panel includes: a substrate, and a plurality of pixel structures according to any one of claims 1 to 10 located on one side of the substrate.

12. A display device, characterized in that: The display device comprises: a power supply component, and the display panel according to claim 11; The power supply component is connected to the display panel and is used to supply power to the display panel.

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