Electrostatic discharge protection system for micro devices

Abstract

The present disclosure discloses an electrostatic discharge (ESD) protection system for micro devices. The ESD protection system includes a pixel driver circuit electrically connected to at least one micro LED pixel for controlling the turn-on or turn-off of the micro LED pixel, and a first ESD protection unit configured in an external circuit outside the pixel driver circuit. The first ESD protection unit includes at least one unidirectional transient voltage suppressor. The cathode of the unidirectional transient voltage suppressor is connected to a first level voltage (Vdd), and the anode of the unidirectional transient voltage suppressor is connected to a second level voltage (Vcom). The micro LED pixel is connected to the second level voltage (Vcom). The present disclosure can protect the micro LED pixel from damage by electrostatic discharge. Various embodiments include an ESD protection system for a display panel having an array of micro LED pixels.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to display devices and techniques, and more particularly to electrostatic discharge protection systems for micro devices. BACKGROUND

[0002] Display technology is becoming increasingly important in today's commercial electronic devices. These display panels are widely used in fixed large screens, such as liquid crystal televisions (LCD TVs) and organic light emitting diode televisions (OLED TVs), as well as portable electronic devices, such as laptop personal computers, smart phones, tablets, and wearable electronic devices.

[0003] Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability of electronic components. An ESD-related event occurs when a finite amount of charge is transferred from one object to another, such as from a human body to a micro device. This process will cause very high current to pass through the micro device in a very short period of time. In fact, more than 35% of chip damage can be attributed to ESD-related events. Common failures caused by ESD are contact damage, current leakage, short circuit, gate oxide rupture, and burnout, among others. ESD failures are unpredictable or not easily diagnosed after their occurrence.

[0004] In addition, designing on-chip ESD structures to protect integrated circuits from ESD stress is a high-priority task in the semiconductor industry. Continued advances in metal-oxide-semiconductor and other processing technologies make ESD-induced failures even more prominent. In fact, many semiconductor companies worldwide are having difficulties in meeting the increasingly stringent ESD protection requirements of various electronic applications, and it can be confidently predicted that the availability of effective and robust ESD protection solutions will be a key and necessary factor for the well-being and commercialization of the electronics industry.

[0005] Furthermore, micro light emitting diode (LED) panels are being widely researched worldwide. However, micro LEDs lack ESD protection, which will lead to damage of the micro LED panels and will also limit their implementation and reliability. SUMMARY

[0006] There is a need for improved display designs that improve and help address the shortcomings of conventional display systems, such as those described above. In particular, there is a need for display panels with improved stability and reliability and better images.

[0007] In some embodiments, integrated circuit (IC) chips need to protect against ESD at all pins of the packaged device. The ESD clamp circuit is ideally in a high impedance state with tolerable capacitive load and only triggers upon detection of an ESD pulse, thereby protecting the input / output (I / O) circuitry. As an ESD pulse appears on the IC pad, the protection device clamps a major portion of the ESD current energy to the ground bus. The clamp device needs to be fully compatible with the I / O function.

[0008] Various embodiments include display panels having integrated micro-LED arrays. The display panels generally include an array of pixel light sources (e.g., LEDs, OLEDs) electrically coupled to corresponding pixel driver circuits (e.g., FETs). Micro-LED panels include an IC backplane and a micro-LED array electrically formed on the IC backplane.

[0009] In some embodiments, the present disclosure provides an ESD protection system for micro devices, particularly for micro-LED panels, to solve the problem that micro-LED panels are always damaged by external electrostatic discharge.

[0010] To achieve the above object, some exemplary embodiments of the present disclosure provide an electrostatic discharge (ESD) protection system of a micro device, comprising: a pixel driver circuit electrically connected to at least one micro-LED pixel for controlling the turn-on or turn-off of the micro-LED pixel, wherein the pixel driver circuit is formed in a semiconductor substrate; and a first ESD protection unit formed in an external circuit outside the semiconductor substrate.

[0011] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, a first end of the first ESD protection unit is connected to a first level voltage (Vdd), a second end of the first ESD protection unit is connected to a second level voltage (Vcom), and the micro-LED pixel is connected to the second level voltage (Vcom).

[0012] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, a cathode of the micro-LED pixel is connected to the second level voltage (Vcom).

[0013] In some exemplary embodiments or any combination of exemplary embodiments of the ESD protection system of the micro device, the system further comprises one or more pad units, and each pad unit comprises a first pad and a second pad electrically connected to the first pad, wherein a first pad unit of the pad unit is connected to the second level voltage (Vcom) and the second end of the first ESD protection unit. A second pad unit of the pad unit is connected to the first voltage (Vdd) and the first end of the first ESD protection unit.

[0014] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the pixel drive circuit is in an integrated circuit (IC) substrate, and the first pad of each pad cell is in the IC substrate, and the second pad of each pad cell is in an external circuit.

[0015] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the external circuit is in a flexible printed circuit board.

[0016] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the first level voltage (Vdd) is greater than the second level voltage (Vcom).

[0017] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the first level voltage (Vdd) is a positive voltage, and the second level voltage (Vcom) is a negative voltage.

[0018] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the at least one micro LED pixel is a micro LED pixel array, and the pixel driver circuit controls turning on or off each micro LED pixel in the micro LED pixel array.

[0019] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the micro pixel driver circuit is connected to the first level voltage (Vdd) and the micro LED pixel.

[0020] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the system further comprises a second ESD protection unit electrically connected to a third level voltage (Vss) and the first level voltage (Vdd).

[0021] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the second ESD protection unit is a power rail ESD clamp circuit.

[0022] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the second ESD protection unit comprises a plurality of second ESD sub-clamp circuits, a first end of each second ESD sub-clamp circuit is connected to the third level voltage (Vss), a second end of each second ESD sub-clamp circuit is connected to the first level voltage (Vdd), and the second ESD sub-clamp circuits are connected in parallel to each other.

[0023] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the first level voltage (Vdd) is greater than the second level voltage (Vcom), and the third level voltage (Vss) is greater than the second level voltage (Vcom).

[0024] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the second level voltage (Vcom) is a negative voltage, the first level voltage (Vdd) is a positive voltage, and the third level voltage (Vss) is zero.

[0025] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the micro device is selected from a micro inorganic LED device or a micro organic LED device, and the micro LED pixel is selected from an inorganic micro LED or an organic micro LED.

[0026] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the system further comprises a third ESD protection unit, and a first end of the third ESD protection unit is connected to the first level voltage (Vdd), and a second end of the third ESD protection unit is connected to a fourth level voltage (Vss).

[0027] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the third ESD protection unit is connected to an input / output (IO) circuit.

[0028] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the third ESD protection unit comprises at least two third ESD sub-clamp circuits, and the third ESD sub-clamp circuits are connected in series to each other.

[0029] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, a first end of the micro pixel driver circuit is connected to a fourth level voltage (Vdd”), and a second end of the micro pixel driver circuit is connected to the micro LED pixel.

[0030] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the system further comprises a fourth ESD protection unit, and a first end of the fourth ESD protection unit is connected to the fourth level voltage (Vdd”), and a second end of the fourth ESD protection unit is connected to the third level voltage (Vss).

[0031] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the third level voltage (Vss) is less than the fourth level voltage (Vdd”).

[0032] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the pixel driver circuit includes at least one switch.

[0033] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the first ESD protection unit includes at least a unidirectional transient voltage suppressor.

[0034] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the cathode of the unidirectional transient voltage suppressor is connected to a first level voltage (Vdd) and the anode of the unidirectional transient voltage suppressor is connected to a second level voltage (Vcom).

[0035] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the system further includes one or more pad units, and each pad unit includes a first pad and a second pad electrically connected to the first pad, wherein the first pad of the pad unit is connected to the second level voltage (Vcom) and the anode of the unidirectional transient voltage suppressor. The second pad of the pad unit is connected to the first voltage (Vdd) and the cathode of the unidirectional transient voltage suppressor.

[0036] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the first ESD protection unit includes at least a bidirectional transient voltage suppressor.

[0037] Some example embodiments of the present disclosure provide an electrostatic discharge (ESD) protection system for micro devices, comprising: a pixel driver circuit electrically connected to at least one micro LED pixel for controlling the turning on or off of the micro LED pixel, the pixel driver circuit formed in a semiconductor substrate; and a first ESD protection unit formed in an external circuit outside the semiconductor substrate, wherein a first end of the first ESD protection unit is connected to a third level voltage (Vss) and a second end of the first ESD protection unit is connected to a second level voltage (Vcom), and the micro LED pixel is connected to the second level voltage (Vcom).

[0038] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the cathode of the micro LED pixel is connected to the second level voltage (Vcom).

[0039] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the system further comprises one or more pad cells, and each pad cell comprises a first pad and a second pad electrically connected to the first pad, wherein the first pad of the pad cell is connected to a third level voltage (Vss) and the first end of the first ESD protection cell. The second pad of the pad cell is connected to a second level voltage (Vcom) and the second end of the first ESD protection cell.

[0040] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the pixel driver circuit is in an integrated circuit (IC) backplane, and the first pad of each pad cell is in the IC backplane, and the second pad of each pad cell is in an external circuit.

[0041] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the external circuit is in a flexible printed circuit board.

[0042] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the third level voltage (Vss) is greater than the second level voltage (Vcom).

[0043] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the second level voltage (Vcom) is a negative voltage, and the third level voltage (Vss) is zero.

[0044] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the at least one micro LED pixel is a micro LED pixel array, and the pixel driver circuit controls turning on or off each micro LED pixel in the micro LED pixel array.

[0045] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the first ESD protection cell comprises at least two unidirectional transient voltage suppressors, and each unidirectional transient voltage suppressor is connected to each micro LED pixel, respectively.

[0046] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the micro pixel driver circuit is connected to a first level voltage (Vdd) and the micro LED pixel.

[0047] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the system further comprises a second ESD protection cell electrically connected to the third level voltage (Vss) and the first level voltage (Vdd).

[0048] In some example embodiments of, or any combination of example embodiments of, the ESD protection system for micro-scale devices, the second ESD protection unit is a power rail ESD clamp circuit.

[0049] In some example embodiments of, or any combination of example embodiments of, the ESD protection system for micro-scale devices, the second ESD protection unit includes a plurality of second ESD sub-clamp circuits, wherein a first end of each second ESD sub-clamp circuit is connected to a third level voltage (Vss), a second end of each second ESD sub-clamp circuit is connected to a first level voltage (Vdd), and the second ESD sub-clamp circuits are connected in parallel to each other.

[0050] In some example embodiments of, or any combination of example embodiments of, the ESD protection system for micro-scale devices, the first level voltage (Vdd) is greater than the second level voltage (Vcom), the third level voltage (Vss) is greater than the second level voltage (Vcom), and the first level voltage (Vdd) is greater than the third level voltage (Vss).

[0051] In some example embodiments of, or any combination of example embodiments of, the ESD protection system for micro-scale devices, the second level voltage (Vcom) is a negative voltage, the first level voltage (Vdd) is a positive voltage, and the third level voltage (Vss) is zero.

[0052] In some example embodiments of, or any combination of example embodiments of, the ESD protection system for micro-scale devices, the micro-scale device is selected from a micro-scale inorganic LED device or a micro-scale organic LED device, and the micro-scale LED pixel is selected from a micro-scale inorganic LED or a micro-scale organic LED.

[0053] In some example embodiments of, or any combination of example embodiments of, the ESD protection system for micro-scale devices, the system further includes a third ESD protection unit, and a first end of the third ESD protection unit is connected to the first level voltage (Vdd) and a second other end of the third ESD protection unit is connected to the third level voltage (Vss).

[0054] In some example embodiments of, or any combination of example embodiments of, the ESD protection system for micro-scale devices, the third ESD protection unit is connected to an IO circuit.

[0055] In some example embodiments of, or any combination of example embodiments of, the ESD protection system for micro-scale devices, the third ESD protection unit includes at least two third ESD sub-clamp circuits, and the third ESD sub-clamp circuits are connected in series to each other.

[0056] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the first end of the micro pixel driver circuit is connected to a fourth level voltage (Vdd”) and the second end of the micro pixel driver circuit is connected to the micro LED pixel.

[0057] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the system further comprises a fourth ESD protection unit and the first end of the fourth ESD protection unit is connected to the fourth level voltage (Vdd”) and the second end of the fourth ESD protection unit is connected to the third level voltage (Vss).

[0058] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the third level voltage (Vss) is less than the fourth level voltage (Vdd”).

[0059] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the pixel driver circuit comprises at least one switch.

[0060] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the first ESD protection unit comprises at least a unidirectional transient voltage suppressor.

[0061] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the cathode of the unidirectional transient voltage suppressor is connected to the third level voltage (Vss) and the anode of the unidirectional transient voltage suppressor is connected to the second level voltage (Vcom).

[0062] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the system further comprises one or more pad units and each pad unit comprises a first pad and a second pad electrically connected to the first pad, wherein the first pad of the pad unit is connected to the third level voltage (Vss) and the cathode of the unidirectional transient voltage suppressor. The second pad of the pad unit is connected to the second level voltage (Vcom) and the anode of the unidirectional transient voltage suppressor.

[0063] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the first ESD protection unit comprises at least a bidirectional transient voltage suppressor.

[0064] Some example embodiments of this disclosure provide an electrostatic discharge (ESD) protection system for micro devices, comprising: a pixel driver circuit electrically connected to at least one micro LED pixel for controlling the turn-on or turn-off of the micro LED pixel, the pixel driver circuit formed in a semiconductor substrate; and a first ESD protection unit formed in an external circuit outside the semiconductor substrate, wherein the first ESD protection unit comprises at least a first ESD protection element and a second ESD protection element; a first end of the first ESD protection element is connected to a first voltage level (Vdd), a second end of the first ESD protection element is connected to a second voltage level (Vcom); a first end of the second ESD protection element is connected to a third voltage level (Vss), a second end of the second ESD protection element is connected to the second voltage level (Vcom); and the micro LED pixel is connected to the second voltage level (Vcom).

[0065] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, a cathode of the micro LED pixel is connected to the second voltage level (Vcom).

[0066] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the system further comprises one or more pad units, each pad unit comprises a first pad and a second pad electrically connected to the first pad, and the pad units comprise a first pad unit, a second pad unit, and a third pad unit, wherein the first pad unit is connected to the third voltage (Vss) and the first end of the second ESD protection element. The second pad unit is connected to the second voltage level (Vcom) and the second end of the second ESD protection element, the second pad unit is further connected to the second end of the first ESD protection element, and the third pad unit is further connected to the first voltage (Vdd) and the first end of the first ESD protection element.

[0067] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the pixel driver circuit is in an IC backplane, and the first pad of each pad unit is in the IC backplane, and the second pad of each pad unit is in the external circuit.

[0068] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the external circuit is in a flexible printed circuit board.

[0069] In some example embodiments or any combination of the example embodiments of the ESD protection system for micro devices, the first voltage level (Vdd) is greater than the second voltage level (Vcom), and the third voltage level (Vss) is greater than the second voltage level (Vcom), and the first voltage level (Vdd) is greater than the third voltage level (Vss).

[0070] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the second level voltage (Vcom) is a negative voltage, the first level voltage (Vdd) is a positive voltage, and the third level voltage (Vss) is zero.

[0071] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the at least one micro LED pixel is a micro LED pixel array, and the pixel driver circuit controls turning on or off each micro LED pixel in the micro LED pixel array.

[0072] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the micro pixel driver circuit is connected to the first level voltage (Vdd) and the micro LED pixel.

[0073] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the system further comprises a second ESD protection unit electrically connected to the third level voltage (Vss) and the first level voltage (Vdd).

[0074] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the second ESD protection unit is a power rail ESD clamp circuit.

[0075] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the second ESD protection unit comprises a plurality of second ESD sub-clamp circuits, wherein a first end of each second ESD sub-clamp circuit is connected to the third level voltage (Vss), a second end of each second ESD sub-clamp circuit is connected to the first level voltage (Vdd), and the second ESD sub-clamp circuits are connected in parallel to each other.

[0076] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the micro device is selected from a micro inorganic LED device or a micro organic LED device, and the micro LED pixel is selected from an inorganic micro LED or an organic micro LED.

[0077] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the system further comprises a third ESD protection unit, a first end of the third ESD protection unit is connected to the first level voltage (Vdd), and a second end of the third ESD protection unit is connected to a fourth level voltage (Vss).

[0078] In some example embodiments of the ESD protection system for micro devices, or any combination of example embodiments, the third ESD protection unit is connected to the IO circuit.

[0079] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the third ESD protection unit includes at least two third ESD sub-clamp circuits, and the third ESD sub-clamp circuits are connected in series to each other.

[0080] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the first end of the micro-pixel driver circuit is connected to a fourth level voltage (Vdd”), and the second end of the micro-pixel driver circuit is connected to the micro-LED pixel.

[0081] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the system further includes a fourth ESD protection unit, and the first end of the fourth ESD protection unit is connected to the fourth level voltage (Vdd”), and the second end of the fourth ESD protection unit is connected to the third level voltage (Vss).

[0082] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the third level voltage (Vss) is less than the fourth level voltage (Vdd”).

[0083] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the pixel driver circuit includes at least one switch.

[0084] In some example embodiments or any combination of example embodiments of the ESD protection system for micro devices, the first ESD protection unit includes at least a first unidirectional transient voltage suppressor and at least a second unidirectional transient voltage suppressor, the cathode of the first unidirectional transient voltage suppressor is connected to the first level voltage (Vdd), and the anode of the first unidirectional transient voltage suppressor is connected to the second level voltage (Vcom). The cathode of the second unidirectional transient voltage suppressor is connected to the third level voltage (Vss), and the anode of the second unidirectional transient voltage suppressor is connected to the second level voltage (Vcom).

[0085] In some example embodiments or any combination of example embodiments of the ESD protection system for a micro device, the system further includes one or more pad cells, each pad cell including a first pad and a second pad electrically connected to the first pad, and the pad cells include a first pad cell, a second pad cell, and a third pad cell, wherein the first pad cell is connected to a third voltage (Vss) and a cathode of the second unidirectional transient voltage suppressor. The second pad cell is connected to a second level voltage (Vcom) and an anode of the second unidirectional transient voltage suppressor, the second pad cell is further connected to an anode of the first unidirectional transient voltage suppressor, and the third pad cell is further connected to a first voltage (Vdd) and a cathode of the first unidirectional transient voltage suppressor.

[0086] In some example embodiments or any combination of example embodiments of the ESD protection system for a micro device, the first ESD protection cell includes at least a first bidirectional transient voltage suppressor and a second bidirectional transient voltage suppressor.

[0087] The designs of the display devices and systems disclosed herein result in reduced ESD damage, which improves the light emission efficiency and overall performance of the display systems. Thus, the implementation of the display systems with the microlens array can better meet the display requirements of augmented reality (AR) and virtual reality (VR), head-up displays (HUD), mobile device displays, wearable device displays, high-definition projectors, and automotive displays, as compared to using conventional displays.

[0088] Note that the various embodiments described above can be combined with any of the other embodiments described herein. The features and advantages described in the specification are not all inclusive and, in particular, many additional features and advantages will be apparent to one of ordinary skill in the art in view of the drawings, specification, and claims. Moreover, it should be noted that the language used in the specification has been principally selected for readability and instructional purposes and can not have been selected to delineate or circumscribe the inventive subject matter. BRIEF DESCRIPTION OF DRAWINGS

[0089] For a more detailed understanding of the present disclosure, reference can be made to the more particular descriptions after a brief description of the various embodiments from which some draw illustrations. The drawings, however, should not be thought to be limiting in any respect as the specification can permit further effective features.

[0090] For convenience, "up" is used to refer to away from the substrate of the light emitting structure, "down" refers to toward the substrate, and other directional terms such as top, bottom, above, below, under, beneath, etc. are interpreted accordingly.

[0091] Figure 1A schematic block diagram of an electrostatic discharge (ESD) protection system for a micro display according to some embodiments of the disclosure, such as the first embodiment, is shown.

[0092] Figure 2 A circuit diagram of an ESD protection system for a micro display according to some embodiments of the disclosure, such as the first embodiment, is shown.

[0093] Figure 3 A circuit diagram of an ESD system according to some embodiments of the disclosure, such as the first embodiment, is shown.

[0094] Figure 4 A schematic block diagram of an ESD system according to some embodiments of the disclosure, such as the second embodiment, is shown.

[0095] Figure 5 A circuit diagram of an ESD protection system according to some embodiments of the disclosure, such as the second embodiment, is shown.

[0096] Figure 6 A circuit diagram of an ESD protection system according to some embodiments of the disclosure, such as the second embodiment, is shown.

[0097] Figure 7 A schematic block diagram of an ESD protection system according to some embodiments of the disclosure, such as the third embodiment, is shown.

[0098] Figure 8 A circuit diagram of an ESD protection system according to some embodiments of the disclosure, such as the third embodiment, is shown.

[0099] Figure 9 A circuit diagram of an ESD system according to some embodiments of the disclosure, such as the third embodiment, is shown.

[0100] Figure 10 A circuit diagram of an ESD protection system according to some embodiments of the disclosure, such as the fourth embodiment, is shown.

[0101] Figure 11 A circuit diagram of an ESD system according to some embodiments of the disclosure, such as the fourth embodiment, is shown.

[0102] Figure 12 A circuit diagram of an ESD protection system according to some embodiments of the disclosure, such as the fifth embodiment, is shown.

[0103] Figure 13 A circuit diagram of an ESD system according to some embodiments of the disclosure, such as the fifth embodiment, is shown.

[0104] Figure 14A circuit diagram of an ESD protection system according to some embodiments of the disclosure, e.g., the sixth embodiment, is shown.

[0105] Figure 15 A circuit diagram of an ESD system according to some embodiments of the disclosure, e.g., the sixth embodiment, is shown.

[0106] Figure 16 A circuit diagram of an ESD protection unit according to some embodiments of the disclosure is shown.

[0107] Accordingly, the dimensions of the various features in the drawings can not be to scale. Furthermore, some of the drawings can not depict all of the components of a given system, method or device. Finally, like reference numerals can be used to denote like features throughout the specification and figures. DETAILED DESCRIPTION

[0108] Many details are described in order to provide a thorough understanding of the example embodiments shown in the drawings. However, some embodiments can be practiced without many of the details given, and the scope of the claims is not limited to those details or aspects specifically recited. Additionally, well-known processes, components, and materials are not described in detail in order to avoid unnecessarily obscuring aspects of the described embodiments.

[0109] As discussed above, to solve the problems in the related art, an ESD protection system for micro devices is provided in some embodiments of the disclosure. The ESD protection system for micro devices includes a pixel driver circuit electrically connected to at least one micro LED pixel for controlling the turning on or off of the micro LED pixel. The pixel driver circuit is formed in a semiconductor substrate; and a first ESD protection unit is formed in an external circuit outside the semiconductor substrate. The first ESD protection unit and the relationship between the first ESD protection unit and the pixel driver will be described below.

[0110] Embodiment 1

[0111] To solve the problems in the related art, an ESD protection system for micro devices is provided in embodiments of the disclosure. Figure 1 A schematic block diagram of an electrostatic discharge (ESD) protection system for micro displays according to some embodiments of the disclosure, e.g., the first embodiment, is shown. Figure 2 A circuit diagram of an ESD protection system for micro displays according to some embodiments of the disclosure, e.g., the first embodiment and Figure 1 A circuit diagram of an ESD protection system for micro displays according to some embodiments of the disclosure, e.g., the first embodiment, is shown. Figure 3 A circuit diagram of an ESD system according to some embodiments of the disclosure, e.g., the first embodiment, is shown.

[0112] Referring to Figure 1 , the ESD protection system of the micro device includes a pixel driver circuit 01 and a first ESD protection unit 021. In some embodiments, the ESD protection system of the micro device further includes a second ESD protection unit 022, which will be further described below. The pixel driver circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, for controlling the turning on or off of the at least one micro LED pixel 00. The pixel driver circuit 01 is connected to the first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driver circuit 01 is connected to the first level voltage 03 (Vdd), and the other end of the micro pixel driver circuit 01 is connected to the micro LED pixel 00. Referring to Figure 3 , in another embodiment, the pixel driver circuit 01 further includes at least one switch, for example, switches 011, 012, and 013. Preferably, the switches 011, 012, and / or 013 are formed by transistors. The switches 011, 012, and 013 are connected in series to achieve three-level control of the turning on or off of the micro LED pixel, thereby controlling the light emission intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series, respectively, for controlling the turning on or off of the current of the micro pixel driver circuit 01, controlling the turning on or off of the PWM signal from the external circuit, and controlling the turning on or off of the scanning signal from the outside. In some embodiments, in Figure 3 , the pixel driver can be connected to the fourth level voltage 07 (Vdd”) instead of being connected to the first level voltage 03 (Vdd).

[0113] Referring to Figure 2 and Figure 1 , in some embodiments, the first ESD protection unit 021 is configured in an external circuit outside the pixel driver circuit. The first ESD protection unit 021 includes at least one unidirectional transient voltage suppressor. The cathode of the unidirectional transient voltage suppressor is connected to the first level voltage 03 (Vdd), and the anode of the unidirectional transient voltage suppressor is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 can include at least two unidirectional transient voltage suppressors, wherein each unidirectional transient voltage suppressor is independently connected to each micro LED pixel.

[0114] Referring to Figure 3In some embodiments, the system further comprises at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 comprises a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. The first pad unit 061 is connected to the third voltage 05 (Vss). The second pad unit 062 is connected to the second level voltage 04 (Vcom). In addition, the second pad unit 062 is also connected to the anode of the unidirectional transient voltage suppressor in the first ESD protection unit 021. The third pad unit 063 is also connected to the first voltage 03 (Vdd) and the cathode of the unidirectional transient voltage suppressor. Furthermore, the pixel driver circuit 01 is in a semiconductor substrate such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300 and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. In addition, the external circuit can be in a flexible or non-flexible printed circuit board (FPC). In some embodiments, the pad units 063, 064 are connected to the third level voltage 05 (Vss) and the fourth level voltage 07 (Vdd”) respectively. The second pads 0632 and 0642 are configured for connecting another electrical element connection outside the pixel driver circuit 01, such as outside the IC substrate 300.

[0115] Embodiment 2

[0116] Figure 4 A schematic block diagram of an ESD system according to some embodiments of the disclosure, for example, the second embodiment, is shown. Figure 5 A circuit diagram of an ESD protection system according to some embodiments of the disclosure, for example, the second embodiment, and Figure 4 A circuit diagram of an ESD protection system according to some embodiments of the disclosure, for example, the second embodiment, is shown. Figure 6 A circuit diagram of an ESD protection system according to some embodiments of the disclosure, for example, the second embodiment, is shown.

[0117] Referring to Figure 4 , the ESD protection system of the micro device comprises a pixel driver circuit 01 and a first ESD protection unit 021. The pixel driver circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, for controlling the turning on or off of the micro LED pixel 00. The pixel driver circuit 01 is connected to the first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driver circuit 01 is connected to the first level voltage 03 (Vdd) and the other end of the micro pixel driver circuit 01 is connected to the micro LED pixel 00. Referring to Figure 6In another embodiment, the pixel driving circuit 01 further comprises at least one switch, such as switches 011, 012 and 013. Preferably, the switches 011, 012 and / or 013 are formed by transistors. The switches 011, 012 and 013 are connected in series to achieve three-stage control of the micro-LED pixel on or off, thereby controlling the light emission intensity and light emission time. For example, the switches 011, 012 and 013 are connected in series to control the on or off of the current of the micro-pixel driver circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scanning signal from the outside, respectively. In some embodiments, the switches 011, 012 and 013 are connected in series to control the on or off of the current of the micro-pixel driver circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scanning signal from the outside, respectively. Figure 6 In another embodiment, the pixel driver can be connected to the fourth level voltage 07 (Vdd”) instead of being connected to the first level voltage 03 (Vdd).

[0118] Referring to Figure 5 and Figure 4 , the first ESD protection unit 021 is configured in an external circuit outside the pixel driver circuit. The first ESD protection unit 021 comprises at least one unidirectional transient voltage suppressor. The cathode of the unidirectional transient voltage suppressor is connected to the third level voltage 05 (Vss), and the anode of the unidirectional transient voltage suppressor is connected to the second level voltage 04 (Vcom). The micro-LED pixel 00 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 can comprise at least two unidirectional transient voltage suppressors, wherein each unidirectional transient voltage suppressor is independently connected to each micro-LED pixel.

[0119] Referring to Figure 6The system further comprises at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 comprises a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. One of the pad units 061 is connected to the cathode of the unidirectional transient voltage suppressor in the ESD protection unit 021 and the third voltage 05 (Vss); another pad unit 062 is connected to the anode of the unidirectional transient voltage suppressor in the ESD protection unit 021 and the second level voltage 04 (Vcom). In addition, the pixel driver circuit 01 is in a semiconductor substrate such as an IC substrate. The first pad 0611, 0621, 0631, 0641 is in the IC substrate 300 and the second pad 0612, 0622, 0632, 0642 is in an external circuit outside the IC substrate 300. In addition, the external circuit can be in a flexible or non-flexible printed circuit board (FPC). In some embodiments, the pad units 063, 064 are connected to the third level voltage 05 (Vss) and the fourth level voltage 07 (Vdd”), respectively. The second pads 0632 and 0642 are configured to be connected to another electrical element outside the pixel driver circuit.

[0120] Embodiment 3

[0121] Figure 7 A schematic block diagram of an ESD protection system according to some embodiments of the present disclosure, for example, the third embodiment, is shown. Figure 8 A circuit diagram of an ESD protection system according to some embodiments of the present disclosure, for example, the third embodiment and Figure 7 A circuit diagram of an ESD system according to some embodiments of the present disclosure, for example, the third embodiment, is shown. Figure 9 A circuit diagram of an ESD system according to some embodiments of the present disclosure, for example, the third embodiment, is shown.

[0122] Referring to Figure 7 , the ESD protection system of the micro device comprises a pixel driver circuit 01 and a first ESD protection unit 021. The pixel driver circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, for controlling the turning on or off of the micro LED pixel 00. The pixel driver circuit 01 is connected to a first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driver circuit 01 is connected to the first level voltage 03 (Vdd) and the other end of the micro pixel driver circuit 01 is connected to the micro LED pixel 00. Referring to Figure 9In another embodiment, the pixel driver circuit 01 further comprises at least one switch, such as switches 011, 012, and 013. Preferably, the switches 011, 012, and / or 013 are formed by transistors. The switches 011, 012, and 013 are connected in series to achieve three-stage control of the micro-LED pixel on or off, thereby controlling the light intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the on or off of the current of the micro-pixel driver circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scan signal from the outside, respectively. In some embodiments, the switches 011, 012, and 013 are connected in series to control the on or off of the current of the micro-pixel driver circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scan signal from the outside, respectively. Figure 3 In some embodiments, the pixel driver can be connected to a fourth level voltage 07 (Vdd”) instead of being connected to the first level voltage 05 (Vdd).

[0123] Referring to Figure 8 and Figure 7 , the first ESD protection unit 021 is configured in an external circuit outside the pixel driver circuit. The first ESD protection unit 021 comprises at least one first unidirectional transient voltage suppressor 0211 and at least one second unidirectional transient voltage suppressor 0212. The cathode of the first unidirectional transient voltage suppressor 0211 is connected to the first level voltage 03 (Vdd), and the anode of the first unidirectional transient voltage suppressor 0211 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 can comprise at least two first unidirectional transient voltage suppressors 0211, wherein each unidirectional transient voltage suppressor 0211 is individually connected to each micro-LED pixel 00. In addition, the cathode of the second unidirectional transient voltage suppressor 0212 is connected to the third level voltage 05 (Vss), and the anode of the second unidirectional transient voltage suppressor 0212 is connected to the second level voltage 04 (Vcom). The micro-LED pixel 00 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 can comprise at least two second unidirectional transient voltage suppressors 0212, wherein each second unidirectional transient voltage suppressor 0212 is individually connected to each micro-LED pixel 00.

[0124] Referring to Figure 9The system further comprises at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 comprises a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. The first pad unit 061 is connected to a third voltage 05 (Vss) and a cathode of the second unidirectional transient voltage suppressor 0212. The second pad unit 062 is connected to a second voltage level 04 (Vcom) and an anode of the second unidirectional transient voltage suppressor 0212. In addition, the second pad unit 062 is further connected to an anode of the first unidirectional transient voltage suppressor 0211. The third pad unit 063 is further connected to a first voltage level 03 (Vdd) and a cathode of the first unidirectional transient voltage suppressor 0211. In some embodiments, the pad units 063, 064 are connected to a third voltage level 05 (Vss) and a fourth voltage level (Vdd”), respectively. The second pads 0632 and 0642 are configured to be connected to another electrical element outside the pixel driver circuit. Furthermore, the pixel driver circuit 01 is in a semiconductor substrate such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300 and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. In addition, the external circuit can be in a flexible or non-flexible printed circuit board (FPC).

[0125] Embodiment 4

[0126] Figure 10 A circuit diagram of an ESD protection system according to some embodiments of the present disclosure, for example, the fourth embodiment, is shown. Figure 11 A circuit diagram of an ESD system according to some embodiments of the present disclosure, for example, the fourth embodiment, is shown.

[0127] Referring to Figure 10 The ESD protection system of the micro device comprises a pixel driver circuit 01 and a first ESD protection unit 021. The pixel driver circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, for controlling the turning on or off of the micro LED pixel 00. The pixel driver circuit 01 is connected to a first voltage level 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driver circuit 01 is connected to the first voltage level 03 (Vdd) and the other end of the micro pixel driver circuit 01 is connected to the micro LED pixel 00. Referring to Figure 11In another embodiment, the pixel driver circuit 01 further comprises at least one switch, such as switches 011, 012, 013. Preferably, the switches 011, 012, and / or 013 are formed by transistors. The switches 011, 012, and 013 are connected in series to achieve three-stage control of the micro-LED pixel on or off, thereby controlling the light emission intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the on or off of the current of the micro-pixel driver circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scanning signal from the outside, respectively. In some embodiments, the switches 011, 012, and 013 are connected in series to control the on or off of the current of the micro-pixel driver circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scanning signal from the outside, respectively. Figure 11 In some embodiments, the pixel driver can be connected to a fourth level voltage 07 (Vdd”) instead of being connected to the first level voltage 03 (Vdd).

[0128] Referring to Figure 10 , the first ESD protection unit 021 is configured in an external circuit outside the pixel driver circuit. The first ESD protection unit 021 comprises at least one bidirectional transient voltage suppressor. One end of the bidirectional transient voltage suppressor is connected to the first level voltage 03 (Vdd), and the other end of the bidirectional transient voltage suppressor is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 can comprise at least two bidirectional transient voltage suppressors, wherein each bidirectional transient voltage suppressor is individually connected to each micro-LED pixel. In some embodiments, the bidirectional transient can be conductive at both ends of the bidirectional transient. The bidirectional transient can be selected from conventional bidirectional transients, which can be understood by those skilled in the art and will not be further described here.

[0129] Referring to Figure 11The system further comprises at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 comprises a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. The first pad unit 061 is connected to a third voltage 05 (Vss). The second pad unit 062 is connected to a second level voltage 04 (Vcom). In addition, the second pad unit 062 is further connected to one end of the bidirectional transient voltage suppressor in the first ESD protection unit 021. The third pad unit 063 is further connected to the first voltage 03 (Vdd) and the other end of the bidirectional transient voltage suppressor. Furthermore, the pixel driver circuit 01 is in a semiconductor substrate such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300 and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. In addition, the external circuit can be in a flexible or non-flexible printed circuit board (FPC). In some embodiments, the pad units 063, 064 are connected to a third level voltage 05 (Vss) and a fourth level voltage 07 (Vdd”) respectively. The second pads 0632 and 0642 are configured for connecting another electrical element outside the pixel driver circuit 01, such as outside the IC substrate 300.

[0130] Embodiment 5

[0131] Figure 12 A circuit diagram of an ESD protection system according to some embodiments of the disclosure, for example, the fifth embodiment, is shown. Figure 13 A circuit diagram of an ESD system according to some embodiments of the disclosure, for example, the fifth embodiment, is shown.

[0132] Referring to Figure 12 The ESD protection system of the micro device comprises a pixel driver circuit 01 and a first ESD protection unit 021. The pixel driver circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, for controlling the turning on or off of the micro LED pixel 00. The pixel driver circuit 01 is connected to a first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driver circuit 01 is connected to the first level voltage 03 (Vdd) and the other end of the micro pixel driver circuit 01 is connected to the micro LED pixel 00. Referring to Figure 13In another embodiment, the pixel driver circuit 01 further comprises at least one switch, such as switches 011, 012, and 013. Preferably, the switches 011, 012, and / or 013 are formed by transistors. The switches 011, 012, and 013 are connected in series to achieve three-stage control of the micro-LED pixel on or off, thereby controlling the light emission intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the on or off of the current of the micro-pixel driver circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scan signal from the outside, respectively. In some embodiments, the switches 011, 012, and 013 are connected in series to control the on or off of the current of the micro-pixel driver circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scan signal from the outside, respectively. Figure 13 In another embodiment, the pixel driver can be connected to a fourth level voltage 07 (Vdd”) instead of being connected to the first level voltage 03 (Vdd).

[0133] Referring to Figure 12 , the first ESD protection unit 021 is configured in an external circuit outside the pixel driver circuit. The first ESD protection unit 021 comprises at least one bidirectional transient voltage suppressor. One end of the bidirectional transient voltage suppressor is connected to the third level voltage 05 (Vss), and the other end of the bidirectional transient voltage suppressor is connected to the second level voltage 04 (Vcom). The micro-LED pixel 00 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 can comprise at least two bidirectional transient voltage suppressors, wherein each bidirectional transient voltage suppressor is individually connected to each micro-LED pixel.

[0134] Referring to Figure 13The system further comprises at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 comprises a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641, respectively. One of the pad units 061 is connected to one end of the bidirectional transient voltage suppressor in the ESD protection unit 021 and the third voltage 05 (Vss); another pad unit 062 is connected to the other end of the bidirectional transient voltage suppressor in the ESD protection unit 021 and the second level voltage 04 (Vcom). In addition, the pixel driver circuit 01 is in a semiconductor substrate such as an IC substrate. The first pad 0611, 0621, 0631, 0641 is in the IC substrate 300, and the second pad 0612, 0622, 0632, 0642 is in an external circuit outside the IC substrate 300. In addition, the external circuit can be in a flexible or non-flexible printed circuit board (FPC). In some embodiments, the pad units 063, 064 are connected to the third level voltage 05 (Vss) and the fourth level voltage 07 (Vdd”), respectively. The second pads 0632 and 0642 are configured to be connected to another electrical element outside the pixel driver circuit.

[0135] Embodiment 6

[0136] Figure 14 A circuit diagram of an ESD protection system according to some embodiments of the present disclosure, for example, the sixth embodiment, is shown. Figure 15 A circuit diagram of an ESD system according to some embodiments of the present disclosure, for example, the sixth embodiment, is shown.

[0137] Referring to Figure 14 The ESD protection system of the micro device comprises a pixel driver circuit 01 and a first ESD protection unit 021. The pixel driver circuit 01 is electrically connected to at least one micro LED pixel 00, such as a micro LED pixel array, for controlling the turning on or off of the micro LED pixel 00. The pixel driver circuit 01 is connected to the first level voltage 03 (Vdd) and the micro LED pixel 00. One end of the micro pixel driver circuit 01 is connected to the first level voltage 03 (Vdd), and the other end of the micro pixel driver circuit 01 is connected to the micro LED pixel 00. Referring to Figure 15In another embodiment, the pixel driving circuit 01 further comprises at least one switch, for example, switches 011, 012, and 013. Preferably, the switches 011, 012, and / or 013 are formed by transistors. The switches 011, 012, and 013 are connected in series to achieve three-level control of the micro-LED pixel on or off, thereby controlling the light intensity and light emission time. For example, the switches 011, 012, and 013 are connected in series to control the on or off of the current of the micro-pixel driving circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scan signal from the outside, respectively. In some embodiments, the switches 011, 012, and 013 are connected in series to control the on or off of the current of the micro-pixel driving circuit 01, the on or off of the PWM signal from the external circuit, and the on or off of the scan signal from the outside, respectively. Figure 15 In some embodiments, the pixel driver can be connected to the fourth level voltage 07 (Vdd”) instead of being connected to the first level voltage 05 (Vdd).

[0138] Referring to Figure 14 , the first ESD protection unit 021 is configured in an external circuit outside the pixel driver circuit. The first ESD protection unit 021 comprises at least one first ESD protection element and one second ESD protection element; here, the first ESD protection element is a first bidirectional transient voltage suppressor 0211, and the second ESD protection element is a second bidirectional transient voltage suppressor 0212. One end of the first bidirectional transient voltage suppressor 0211 is connected to the first level voltage 03 (Vdd), and the other end of the first bidirectional transient voltage suppressor 0211 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 can comprise at least two first bidirectional transient voltage suppressors 0211, wherein each bidirectional transient voltage suppressor 0211 is individually connected to each micro-LED pixel. In addition, one end of the second bidirectional transient voltage suppressor 0212 is connected to the third level voltage 05 (Vss), and the other end of the second bidirectional transient voltage suppressor 0212 is connected to the second level voltage 04 (Vcom). The micro-LED pixel 00 is connected to the second level voltage 04 (Vcom). In some embodiments, the first ESD protection unit 021 can comprise at least two second bidirectional transient voltage suppressors 0212, wherein each second bidirectional transient voltage suppressor 0212 is individually connected to each micro-LED pixel.

[0139] Referring to Figure 15The system further includes at least one pad unit 061, 062, 063, 064. Each pad unit 061, 062, 063, 064 includes a first pad 0611, 0621, 0631, 0641 and a second pad 0612, 0622, 0632, 0642 electrically connected to the first pad 0611, 0621, 0631, 0641. The first pad unit 061 is connected to a third voltage 05 (Vss) and one end of a second bidirectional transient voltage suppressor 0212. The second pad unit 062 is connected to a second level voltage 04 (Vcom) and another end of the second bidirectional transient voltage suppressor 0212. In addition, the third pad unit 063 is further connected to a first voltage 03 (Vdd) and one end of a first bidirectional transient voltage suppressor 0211; and, the second pad unit 062 is further connected to another end of the first bidirectional transient voltage suppressor 0211. In some embodiments, the pad units 063, 064 are connected to a third level voltage 05 (Vss) and a fourth level voltage (Vdd”), respectively. The second pads 0632 and 0642 are configured to be connected to another electrical element outside the pixel driver circuit. In addition, the pixel driver circuit 01 is in a semiconductor substrate such as an IC substrate. The first pads 0611, 0621, 0631, 0641 are in the IC substrate 300, and the second pads 0612, 0622, 0632, 0642 are in an external circuit outside the IC substrate 300. In addition, the external circuit can be in a flexible or non-flexible printed circuit board (FPC).

[0140] According to the foregoing embodiments 1 to 6, in some embodiments, the ESD protection system further includes a second ESD protection unit, a third ESD protection unit, and a fourth ESD protection unit.

[0141] In addition, with reference to Figures 1 to 15 The system includes a second ESD protection unit 022 electrically connected to a third level voltage 05 (Vss) and a first level voltage 03 (Vdd). The second ESD protection unit 022 is a power rail ESD clamp circuit. With reference to Figure 3 , 6 , 9, 11, 13, and 15, the second ESD protection unit 022 includes at least two second ESD sub-clamp circuits. Preferably, the second ESD sub-clamp circuits are connected in parallel to each other. Here, one end of each second ESD sub-clamp circuit is connected to the third level voltage 05 (Vss), and another end of each second ESD sub-clamp circuit is connected to the first level voltage 03 (Vdd).

[0142] Preferably, the first level voltage 03 (Vdd) is greater than the second level voltage 04 (Vcom). The third level voltage 05 (Vss) is greater than the second level voltage 04 (Vcom); and, the first level voltage 03 (Vdd) is greater than the first level voltage 03 (Vss). Since the micro-LED pixel 00 cannot work at a high voltage value, the second level voltage 04 (Vcom) is a negative voltage applied to the micro-LED pixel 00. In some embodiments, preferably, the second level voltage (Vcom) 04 is a negative voltage, the third level voltage (Vss) 05 is zero and the first level voltage (Vdd) 03 is a positive voltage. For example, the voltage of Vdd can be 1V to 3V, the voltage of Vdd" can be 1V to 2V, the voltage of Vss can be 0V and the voltage of Vcom can be -5V to 0V.

[0143] With reference to Figure 3 , 6 , 9, 11, 13 and 15, the system further comprises a third ESD protection unit 023. One end of the third ESD protection unit 023 is connected to the first level voltage 03 (Vdd), and the other end of the third ESD protection unit 023 is connected to the third level voltage 05 (Vss).

[0144] In some embodiments, an input / output (IO) circuit 06 is formed beside the pixel driver circuit 01 for receiving signals from the outside. The third ESD protection unit 023 is connected to the IO circuit 06 for performing ESD protection on the IO circuit 06. In another embodiment, the IO circuit 06 can be formed around the pixel driver circuit 01 or around the micro-LED pixel 00. The third ESD protection unit 023 comprises at least two third ESD sub-clamp circuits 0231 and 0232 connected in series to each other, for example as shown in Figure 3 In some examples, the third ESD sub-clamp circuit 0231 is a PMOS, and the third ESD sub-clamp circuit 0232 is an NMOS. One end of one third ESD sub-clamp circuit 0231 is connected to the first level voltage 03 (Vdd), the other end of the third ESD sub-clamp circuit 0231 is connected to the other third ESD sub-clamp circuit 0232, and the third ESD sub-clamp circuit 0232 is connected to the third level voltage 05 (Vss). In addition, the gate and source of the third ESD sub-clamp circuit 0231 are connected to the first level voltage 03 (Vdd), the drain of the third ESD sub-clamp circuit 0231 is connected to the source of the third ESD sub-clamp circuit 0232, and the gate and drain of the third ESD sub-clamp circuit 0232 are connected to the third level voltage 05 (Vss). The IO circuit 06 is connected to the drain of the third ESD sub-clamp circuit 0231 and the source of the third ESD sub-clamp circuit 0232.

[0145] With reference toFigure 3 、 6 , 9, 11, 13 and 15, in another embodiment, the ESD protection system further comprises a fourth ESD protection unit 024. One end of the fourth ESD protection unit 024 is connected to the fourth level voltage 07 (Vdd”), and the other end of the fourth ESD protection unit 024 is connected to the third level voltage 05 (Vss).

[0146] Preferably, in some embodiments, the first level voltage 03 (Vdd) is greater than the second level voltage 04 (Vcom). The first level voltage 03 (Vdd) is greater than the fourth level voltage 07 (Vdd”). The third level voltage 05 (Vss) is greater than the second level voltage 04 (Vcom). And, the first level voltage 03 (Vdd) is greater than the third level voltage 05 (Vss). Since the micro-LED pixel 00 cannot work at high voltage values, the second level voltage 04 (Vcom) is preferably a negative voltage applied to the micro-LED pixel 00. In addition, preferably, the first level voltage 03 (Vdd) is a positive voltage, the fourth level voltage 07 (Vdd”) is a positive voltage and the third level voltage 05 (Vss) is zero. For example, the voltage of Vdd can be 1V to 3V, the voltage of Vdd” can be 1V to 2V, the voltage of Vss can be 0V and the voltage of Vcom can be -5V to 0V.

[0147] Figure 16 A circuit diagram of an ESD protection unit is shown in accordance with some embodiments of the present disclosure. In some embodiments, the second ESD protection unit 022, the third ESD protection unit 023, the fourth ESD protection unit 024 are power rail ESD clamp circuits, which can be referred to Figure 16 . Figure 16 is an exemplary illustration of a power pin ESD network consisting of grounded-gate n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) devices. In some embodiments, Figure 16 the left structure 022L in FIG. 22 is the actual power clamp circuit, while Figure 16The right structure 022R in FIG. 22 is a diagram showing the principle of a power clamp ESD protection system. A ground grid N-type metal oxide semiconductor (NMOS) ESD network, such as 022L, is a network used for complementary metal oxide semiconductor (CMOS) technology. Typically, it is an n-channel MOSFET with a MOSFET drain connected to a power pin 1602 with V’DD, the n-channel MOSFET also having a source and gate connected to a ground power rail 1604. The circuit remains “off’ in normal operation. When the signal pin 1602 exceeds the MOSFET snapback, the circuit discharges to the V’SS power rail. In some examples, snapback is the voltage applied to a transistor when an avalanche breakdown or impact ionization in the transistor provides enough base current to turn on the transistor. When the voltage of the signal pin 1602 is below ground potential, the MOSFET drain is forward biased to the p-well or p-substrate region for the purpose of electrostatic protection.

[0148] In embodiments, the micro-LED pixel 00 can be replaced by a micro-LED pixel array, and the pixel driver circuit 01 controls the turn-on or turn-off of each micro-LED pixel in the micro-LED pixel array. Preferably, the first ESD protection unit 021 is connected to each micro-LED pixel.

[0149] In some embodiments, for example as Figure 3 , 6The micro device with one or more ESD protection units shown in FIGS. 9, 11, 13, and 15 is selected from one of a micro inorganic LED device, and / or a micro organic LED device. In some embodiments, the micro LED pixel 00 is selected from an inorganic micro LED or an organic micro LED. For example, the micro device can be a micro display panel. The micro LED display panel includes a micro LED array forming a pixel array, such as a 640*480 pixel array. In some embodiments, the length of the micro LED display panel cannot be greater than 100, 200, 300, 400, or 500 microns and the width of the micro LED display panel cannot be greater than 100, 200, 300, 400, or 500 microns. In some embodiments, the length of the micro LED display panel cannot exceed 1 cm and the width of the micro LED display panel cannot exceed 1 cm. In some embodiments, the length of the micro LED display panel cannot exceed 2 cm and the width of the micro LED display panel cannot exceed 2 cm. In some embodiments, the length of the micro LED display panel cannot exceed 10 cm and the width of the micro LED display panel cannot exceed 10 cm. In some embodiments, the length of the micro LED display panel cannot exceed 20 cm and the width of the micro LED display panel cannot exceed 20 cm. The micro LED display panel also includes an IC backplane. The micro LED display panel includes a micro LED array that includes a plurality of inorganic micro LEDs to show a display image. The micro LED array is electrically connected and bonded to the IC backplane. The second ESD protection unit 022, the third ESD protection unit 023, the fourth ESD protection unit 024, and the pixel driver circuit 01 are formed in the IC backplane. The first ESD protection unit 021 is formed in an external circuit board outside the IC backplane 300, which is independent of the IC backplane, for example, an external FPC board. In some embodiments, the first ESD protection unit 021 is configured to protect the micro LED pixel and the pixel driver circuit in an electrostatic discharge state. The first ESD protection unit 021 can avoid current leakage of the pixel driver circuit and another circuit in the IC backplane, and avoid damage to the micro LED pixel.

[0150] In some embodiments, the ESD protection unit is part of an IC circuit to protect the IC circuit in an electrostatic discharge state. The ESD protection unit can avoid current leakage of the IC circuit in the IC backplane.

[0151] Here, the micro-LEDs can be selected from inorganic LEDs or organic LEDs. On the IC backplane, an electrode connection area is electrically connected to the micro-LED array, and a signal line area is formed around the electrode connection area. The IC backplane acquires a signal such as image data from the outside through the signal line to control the corresponding micro-LED to emit light. The IC backplane generally employs an 8-bit digital-to-analog converter (DAC). The 8-bit DAC has a representation of 256 levels, and each level corresponds to one gray level, i.e., the 8-bit DAC can provide 256 different gray levels. Since any one of the 256 gray levels can be applied to the micro-LED, a range from 0 to 255 of the gray levels can be displayed by one pixel. Alternatively, the luminance value of the micro-LED can be controlled by the voltage amplitude or the current amplitude of the signal acquired by the IC backplane, and the gray level can be shown by the time interval of the signal, e.g., the pulse width.

[0152] Those skilled in the art will appreciate that the micro display panel is not limited by the above-described structure, and can include more or fewer components than those illustrated, or can combine some components, or can use different components.

[0153] Those skilled in the art will appreciate that all or part of the steps for implementing the foregoing embodiments can be implemented by hardware, or can be implemented by a program instructing the related hardware. The program can be stored in a flash memory, a conventional computer device, a central processing module, an adjustment module, etc.

[0154] The above description is merely an embodiment of the present disclosure, and the present disclosure is not limited thereto. Modifications, equivalent replacements, and improvements made without departing from the concepts and principles of the present disclosure will fall within the scope of protection of the present disclosure.

[0155] Other embodiments also include various subsets of the above-described embodiments of the embodiments shown in Figures 1-16 Various subsets of the above-described embodiments of the embodiments shown in

[0156] While the specific description contains many details, these should not be construed as limiting the scope of the application but merely as illustrating the different examples and aspects of the application. It should be appreciated that the scope of the application encompasses other embodiments not discussed in detail above. For example, the above-described methods can be applied to the integration of functional devices other than LEDs and OLEDs with control circuits other than pixel drivers. Examples of non-LED devices include vertical cavity surface emitting lasers (VCSELs), photodetectors, microelectromechanical systems (MEMS), silicon photonic devices, power electronic devices, and distributed feedback lasers (DFB). Examples of other control circuits include current drivers, voltage drivers, transimpedance amplifiers, and logic circuits.

[0157] The foregoing description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the embodiments described herein and variants thereof. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other embodiments without departing from the spirit or scope of the subject matter disclosed herein. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0158] Features of the present application can be realized by or with the aid of a computer program product, such as a storage medium (a plurality of media) or a computer readable storage medium (a plurality of media) having store therein or thereon instructions which can be used to program a processing system to perform any of the features presented herein. The storage medium can include, but is not limited to, high-speed random access memory such as DRAM, SRAM, DDR RAM, or other random access solid state memory devices; and can include non-volatile memory, such as one or more magnetic disk storage devices, optical disk storage devices, flash memory devices, or other non-volatile solid state storage devices. The storage can optionally include one or more storage devices remotely located from the CPU. The storage, or optionally the non-volatile storage device(s) within the storage, comprises a non-transitory computer readable storage medium.

[0159] Features of the present application, which are stored on any machine readable medium (a plurality of media), can be incorporated in software and / or firmware for controlling the hardware of a processing system, and for enabling a processing system to interact with other mechanisms utilizing the results of the present application. Such software or firmware can include, but is not limited to, application code, device drivers, operating systems, and / or execution environments / containers.

[0160] It should be understood that although the terms “first,” “second,” etc. can be used herein to describe various elements or steps, these elements or steps should not be limited by these terms. These terms are only used to distinguish one element or step from another.

[0161] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the claims. As used in the description of the embodiments and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will also be understood that the term “and / or” as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items. It will be further understood that the terms “comprises” and / or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0162] As used herein, the term "if' can be construed to mean "when" or "upon" or "in response to determining" or "in response to detecting," that a stated condition precedent has been met, according to context. Similarly, the phrase "if it is determined [that a stated condition precedent has been met]" or "if [a stated condition precedent is true]" or "when [a stated condition precedent is true]" can be construed to mean "when" or "upon" or "in response to determining" or "in response to detecting," that a stated condition precedent has been met, according to context.

[0163] The foregoing description, for purposes of explanation, has been made in the context of a specific implementation. However, the illustrative discussion of specific implementations is not intended to be exhaustive or to limit the claims to the precise forms disclosed. Many modifications and variations are possible in light of the above teachings. It is, therefore, to be understood that within the scope of the claims, the disclosure and specific examples can be practiced otherwise than as specifically described. The implementations have been chosen and described in order to provide the best illustration of the principles of the application and the practical application to thereby enable one of ordinary skill in the art to best utilize the application and various implementations.

Claims

1. An electrostatic discharge (ESD) protection system for micro devices, comprising: a pixel driver circuit electrically connected to at least one micro LED pixel for controlling turning on or off of the micro LED pixel, wherein the pixel driver circuit is formed in a semiconductor substrate; and a first electrostatic discharge (ESD) protection unit formed in an external circuit outside of the semiconductor substrate, wherein the first electrostatic discharge (ESD) protection unit comprises at least one unidirectional transient voltage suppressor, wherein a cathode of the unidirectional transient voltage suppressor is connected to a first voltage level and an anode of the unidirectional transient voltage suppressor is connected to a second voltage level.

2. The electrostatic discharge (ESD) protection system for micro devices of claim 1, wherein a first end of the first electrostatic discharge (ESD) protection unit is connected to the first voltage level and a second end of the first electrostatic discharge (ESD) protection unit is connected to the second voltage level, wherein the micro LED pixel is connected to the second voltage level.

3. The electrostatic discharge (ESD) protection system for micro devices of claim 2, wherein a cathode of the micro LED pixel is connected to the second voltage level.

4. The electrostatic discharge (ESD) protection system for micro devices of claim 2, wherein the electrostatic discharge (ESD) protection system for micro devices further comprises one or more pad units, and each of the pad units comprises a first pad and a second pad electrically connected to the first pad, wherein a first pad unit of the pad units is connected to the second voltage level and the second end of the first electrostatic discharge (ESD) protection unit, and a second pad unit of the pad units is connected to the first voltage level and the first end of the first electrostatic discharge (ESD) protection unit.

5. The electrostatic discharge (ESD) protection system for micro devices of claim 4, wherein the pixel driver circuit is in an integrated circuit (IC) substrate, and the first pad of each of the pad units is in the integrated circuit (IC) substrate and the second pad of each of the pad units is in the external circuit.

6. The electrostatic discharge (ESD) protection system for micro devices of claim 5, wherein the external circuit is in a flexible printed circuit board.

7. The electrostatic discharge (ESD) protection system for micro devices of claim 2, wherein the first voltage level is higher than the second voltage level.

8. The electrostatic discharge (ESD) protection system for micro devices of claim 7, wherein the first voltage level is a positive voltage and the second voltage level is a negative voltage.

9. The electrostatic discharge (ESD) protection system for micro devices of claim 2, wherein the at least one micro LED pixel is a micro LED pixel array, and the pixel driver circuit controls turning on or off of each of the micro LED pixels in the micro LED pixel array.

10. The electrostatic discharge (ESD) protection system for micro devices of claim 2, wherein the pixel driver circuit is connected to the first voltage level and the micro LED pixel.

11. The micro-device electrostatic discharge (ESD) protection system of claim 2, wherein the micro-device electrostatic discharge (ESD) protection system further comprises a second electrostatic discharge (ESD) protection unit electrically connected to a third voltage level and the first voltage level.

12. The micro-device electrostatic discharge (ESD) protection system of claim 11, wherein the second electrostatic discharge (ESD) protection unit is a power rail electrostatic discharge (ESD) clamp circuit.

13. The micro-device electrostatic discharge (ESD) protection system of claim 11, wherein the second electrostatic discharge (ESD) protection unit comprises a plurality of second electrostatic discharge (ESD) sub-clamp circuits, wherein a first end of each of the second electrostatic discharge (ESD) sub-clamp circuits is connected to the third voltage level, wherein a second end of each of the second electrostatic discharge (ESD) sub-clamp circuits is connected to the first voltage level, and wherein the second electrostatic discharge (ESD) sub-clamp circuits are connected in parallel to each other.

14. The micro-device electrostatic discharge (ESD) protection system of claim 11, wherein the first voltage level is higher than the second voltage level and the third voltage level is higher than the second voltage level.

15. The micro-device electrostatic discharge (ESD) protection system of claim 14, wherein the second voltage level is a negative voltage, the first voltage level is a positive voltage and the third voltage level is zero.

16. The micro-device electrostatic discharge (ESD) protection system of claim 1, wherein the micro-device is selected from a micro inorganic LED device or a micro organic LED device, and the micro LED pixel is selected from an inorganic micro LED or an organic micro LED.

17. The micro-device electrostatic discharge (ESD) protection system of claim 2, wherein the micro-device electrostatic discharge (ESD) protection system further comprises a third electrostatic discharge (ESD) protection unit, wherein a first end of the third electrostatic discharge (ESD) protection unit is connected to the first voltage level and a second end of the third electrostatic discharge (ESD) protection unit is connected to a fourth voltage level.

18. The micro-device electrostatic discharge (ESD) protection system of claim 17, wherein the third electrostatic discharge (ESD) protection unit is connected to an input / output (IO) circuit.

19. The micro-device electrostatic discharge (ESD) protection system of claim 17, wherein the third electrostatic discharge (ESD) protection unit comprises at least two third electrostatic discharge (ESD) sub-clamp circuits, wherein the third electrostatic discharge (ESD) sub-clamp circuits are connected in series to each other.

20. The micro-device electrostatic discharge (ESD) protection system of claim 2, wherein a first end of the pixel driver circuit is connected to a fourth voltage level, and a second end of the pixel driver circuit is connected to the micro LED pixel.

21. The micro-device electrostatic discharge (ESD) protection system of claim 20, wherein the micro-device electrostatic discharge (ESD) protection system further comprises a fourth electrostatic discharge (ESD) protection unit, and a first end of the fourth electrostatic discharge (ESD) protection unit is connected to the fourth level voltage and a second end of the fourth electrostatic discharge (ESD) protection unit is connected to a third level voltage.

22. The micro-device electrostatic discharge (ESD) protection system of claim 21, wherein the third level voltage is lower than the fourth level voltage.

23. The micro-device electrostatic discharge (ESD) protection system of claim 1, wherein the pixel driver circuit comprises at least one switch.

24. The micro-device electrostatic discharge (ESD) protection system of claim 1, wherein the micro-device electrostatic discharge (ESD) protection system further comprises one or more pad units, and each of the pad units comprises a first pad and a second pad electrically connected to the first pad, wherein a first one of the pad units is connected to the second level voltage and an anode of the unidirectional transient voltage suppressor, and a second one of the pad units is connected to the first level voltage and a cathode of the unidirectional transient voltage suppressor.

25. The micro-device electrostatic discharge (ESD) protection system of claim 2, wherein the first electrostatic discharge (ESD) protection unit comprises at least one bidirectional transient voltage suppressor.

26. A micro-device electrostatic discharge (ESD) protection system, comprising: a pixel driver circuit electrically connected to at least one micro-LED pixel for controlling turning on or off of the micro-LED pixel, wherein the pixel driver circuit is formed in a semiconductor substrate; and, a first electrostatic discharge (ESD) protection unit formed in an external circuit outside of the semiconductor substrate, wherein a first end of the first electrostatic discharge (ESD) protection unit is connected to a third level voltage and a second end of the first electrostatic discharge (ESD) protection unit is connected to a second level voltage, wherein the micro-LED pixel is connected to the second level voltage, wherein the first electrostatic discharge (ESD) protection unit comprises at least one unidirectional transient voltage suppressor, wherein a cathode of the unidirectional transient voltage suppressor is connected to the third level voltage and an anode of the unidirectional transient voltage suppressor is connected to the second level voltage.

27. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein a cathode of the micro-LED pixel is connected to the second level voltage.

28. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein the micro-device electrostatic discharge (ESD) protection system further comprises one or more pad units, and each of the pad units comprises a first pad and a second pad electrically connected to the first pad, wherein a first one of the pad units is connected to the third level voltage and the first end of the first electrostatic discharge (ESD) protection unit, and a second one of the pad units is connected to the second level voltage and the second end of the first electrostatic discharge (ESD) protection unit. ​ The pad unit is connected to the second level voltage and a second end of the first electrostatic discharge (ESD) protection unit.

29. The micro-device electrostatic discharge (ESD) protection system of claim 28, wherein the pixel driver circuit is in an integrated circuit (IC) substrate and the first pad of each of the pad units is in the integrated circuit (IC) substrate and the second pad of each of the pad units is in the external circuit.

30. The micro-device electrostatic discharge (ESD) protection system of claim 29, wherein the external circuit is in a flexible printed circuit board.

31. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein the third level voltage is higher than the second level voltage.

32. The micro-device electrostatic discharge (ESD) protection system of claim 31, wherein the second level voltage is a negative voltage and the third level voltage is zero.

33. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein the at least one micro-LED pixel is an array of micro-LED pixels and the pixel driver circuit controls turning on or off each of the micro-LED pixels in the array of micro-LED pixels.

34. The micro-device electrostatic discharge (ESD) protection system of claim 33, wherein the first electrostatic discharge (ESD) protection unit comprises at least two unidirectional transient voltage suppressors and each of the unidirectional transient voltage suppressors is independently connected to each of the micro-LED pixels.

35. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein the pixel driver circuit is connected to a first level voltage and the micro-LED pixel.

36. The micro-device electrostatic discharge (ESD) protection system of claim 26, further comprising a second electrostatic discharge (ESD) protection unit electrically connected to the third level voltage and a first level voltage.

37. The micro-device electrostatic discharge (ESD) protection system of claim 36, wherein the second electrostatic discharge (ESD) protection unit is a power rail electrostatic discharge (ESD) clamp circuit.

38. The micro-device electrostatic discharge (ESD) protection system of claim 36, wherein the second electrostatic discharge (ESD) protection unit comprises a plurality of second electrostatic discharge (ESD) sub-clamp circuits, wherein a first end of each of the second electrostatic discharge (ESD) sub-clamp circuits is connected to the third level voltage and a second end of each of the second electrostatic discharge (ESD) sub-clamp circuits is connected to the first level voltage, and wherein the second electrostatic discharge (ESD) sub-clamp circuits are connected to each other in parallel.

39. The micro-device electrostatic discharge (ESD) protection system of claim 36, wherein the first level voltage is higher than the second level voltage, the third level voltage is higher than the second level voltage, and the first level voltage is higher than the third level voltage.

40. The micro-device electrostatic discharge (ESD) protection system of claim 39, wherein the second level voltage is a negative voltage, the first level voltage is a positive voltage and the third level voltage is zero.

41. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein the micro-device is selected from a micro-inorganic LED device or a micro-organic LED device, and the micro-LED pixel is selected from an inorganic micro-LED or an organic micro-LED.

42. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein the micro-device electrostatic discharge (ESD) protection system further comprises a third electrostatic discharge (ESD) protection unit, wherein a first end of the third electrostatic discharge (ESD) protection unit is connected to a first level voltage and a second other end of the third electrostatic discharge (ESD) protection unit is connected to the third level voltage.

43. The micro-device electrostatic discharge (ESD) protection system of claim 42, wherein the third electrostatic discharge (ESD) protection unit is connected to an input / output (IO) circuit.

44. The micro-device electrostatic discharge (ESD) protection system of claim 42, wherein the third electrostatic discharge (ESD) protection unit comprises at least two third electrostatic discharge (ESD) sub-clamp circuits, wherein the third electrostatic discharge (ESD) sub-clamp circuits are connected in series to each other.

45. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein a first end of the pixel driver circuit is connected to a fourth level voltage, wherein a second end of the pixel driver circuit is connected to the micro-LED pixel.

46. The micro-device electrostatic discharge (ESD) protection system of claim 45, wherein the micro-device electrostatic discharge (ESD) protection system further comprises a fourth electrostatic discharge (ESD) protection unit, wherein a first end of the fourth electrostatic discharge (ESD) protection unit is connected to the fourth level voltage and a second end of the fourth electrostatic discharge (ESD) protection unit is connected to the third level voltage.

47. The micro-device electrostatic discharge (ESD) protection system of claim 46, wherein the third level voltage is lower than the fourth level voltage.

48. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein the pixel driver circuit comprises at least one switch.

49. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein the micro-device electrostatic discharge (ESD) protection system further comprises one or more pad units, and each of the pad units comprises a first pad and a second pad electrically connected to the first pad, wherein a first one of the pad units is connected to the third level voltage and a cathode of the unidirectional transient voltage suppressor, and a second one of the pad units is connected to the second level voltage and an anode of the unidirectional transient voltage suppressor.

50. The micro-device electrostatic discharge (ESD) protection system of claim 26, wherein the first electrostatic discharge (ESD) protection unit comprises at least one bidirectional transient voltage suppressor.

51. The electrostatic discharge (ESD) protection system for microdevices of claim 26, wherein the first ESD protection unit comprises at least one first ESD protection element and one second ESD protection element. a first end of the first electrostatic discharge (ESD) protection element is connected to a first voltage level and a second end of the first electrostatic discharge (ESD) protection element is connected to a second voltage level; a first end of the second electrostatic discharge (ESD) protection element is connected to a third voltage level and a second end of the second electrostatic discharge (ESD) protection element is connected to the second voltage level; and, the micro-LED pixel is connected to the second voltage level.

52. The micro-device electrostatic discharge (ESD) protection system of claim 51, wherein the micro-device electrostatic discharge (ESD) protection system further comprises one or more pad units, each of the pad units comprises a first pad and a second pad electrically connected to the first pad, and the pad units comprise a first pad unit, a second pad unit, and a third pad unit, wherein the first pad unit is connected to the third voltage level and the first end of the second electrostatic discharge (ESD) protection element, the second pad unit is further connected to the second end of the first electrostatic discharge (ESD) protection element, and the third pad unit is further connected to the first voltage level and the first end of the first electrostatic discharge (ESD) protection element.

53. The micro-device electrostatic discharge (ESD) protection system of claim 51, wherein the first electrostatic discharge (ESD) protection unit comprises at least one first unidirectional transient voltage suppressor and at least one second unidirectional transient voltage suppressor, a cathode of the first unidirectional transient voltage suppressor is connected to the first voltage level and an anode of the first unidirectional transient voltage suppressor is connected to the second voltage level, and a cathode of the second unidirectional transient voltage suppressor is connected to the third voltage level and an anode of the second unidirectional transient voltage suppressor is connected to the second voltage level.

54. The micro-device electrostatic discharge (ESD) protection system of claim 53, wherein the micro-device electrostatic discharge (ESD) protection system further comprises one or more pad units, each of the pad units comprises a first pad and a second pad electrically connected to the first pad, and the pad units comprise a first pad unit, a second pad unit, and a third pad unit, wherein the first pad unit is connected to the third voltage level and the cathode of the second unidirectional transient voltage suppressor, the second pad unit is connected to the second voltage level and the anode of the second unidirectional transient voltage suppressor, the second pad unit is further connected to the anode of the first unidirectional transient voltage suppressor, and the third pad unit is further connected to the first voltage level and the cathode of the first unidirectional transient voltage suppressor.

55. The micro device electrostatic discharge (ESD) protection system of claim 53, wherein the first electrostatic discharge (ESD) protection unit comprises at least one first bidirectional transient voltage suppressor and one second bidirectional transient voltage suppressor.

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