A double-light-transmitting non-planar perovskite solar cell and preparation method thereof

Abstract

The present invention provides a double-light-transmitting non-planar perovskite solar cell and a preparation method, belonging to the technical field of solar cells. The method comprises: providing a substrate with an arc or curvature; preparing a first, second, third and fourth stamps according to the arc or curvature of the substrate; forming a hole blocking layer on the substrate; forming an electron transport layer on the hole blocking layer, and the electron transport layer is transferred to the hole blocking layer through the first stamp; forming an insulating spacer layer on the electron transport layer, and the insulating spacer layer is transferred to the electron transport layer through the second stamp; forming a hole transport layer on the insulating spacer layer, and the hole transport layer is transferred to the insulating spacer layer through the third stamp; forming a light-transmitting conductive film electrode on the hole transport layer to obtain a double-light-transmitting non-planar perovskite solar cell, and the conductive film is transferred to the hole transport layer through the fourth stamp. This scheme realizes the deposition preparation of thin films on non-planar surfaces and the efficient preparation of double-light-transmitting non-planar solar cells.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a double-light-transmitting non-planar perovskite solar cell and a preparation method thereof. Background Art

[0002] At present, in the preparation process of perovskite solar cells, the process methods for depositing nano- or micron-sized thin films are often used but cannot meet the requirements of practical applications. For example, the deposition of thin films is affected by the material, shape, and size of the substrate; traditional thin film preparation processes, such as spray pyrolysis, vapor deposition technology, atomic layer deposition technology, solution spin coating, slit coating, and screen printing, all require that the deposited substrate has a small curvature to ensure the uniformity of thin film preparation; at the same time, the preparation of oxide semiconductor thin films usually requires a subsequent high-temperature sintering process, which requires the substrate to have a certain rigidity and high-temperature stability. Therefore, the above method is difficult to achieve the preparation of devices with fixed curvature. In practical applications, such as photovoltaic glass, automotive photovoltaic roofs, street light photovoltaic cells, etc., various types of non-planar solar cells are required due to different application scenarios. This requires innovative process preparation methods to meet the production applications of substrates with different curvatures. At the same time, in order to ensure full utilization of photons, most existing solar cells adopt a unidirectional light-transmitting structure to ensure maximum absorption of incident sunlight by the photosensitive material, that is, one side electrode is a transparent electrode, and the counter electrode is a metal or carbon electrode. This will result in all sunlight being unable to pass through the solar cell device. For specific occasions, such as photovoltaic buildings, photovoltaic glass, etc., a certain degree of light transmittance is required to ensure indoor lighting, so further improvements are needed to the electrode materials of solar cell devices. Summary of the invention

[0003] The present invention provides a dual-light-transmitting non-planar perovskite solar cell and a preparation method thereof, which solves the problem that the existing solar cell preparation method is difficult to realize the preparation of devices with fixed curvature and the solar cell device is not light-transmitting.

[0004] In order to solve the above technical problems, the technical solution of the present invention is as follows:

[0005] An embodiment of the present invention provides a method for preparing a dual-light-transmitting non-planar perovskite solar cell, comprising:

[0006] Providing a substrate having an arc or curvature;

[0007] According to the arc or curvature of the substrate, a first stamp, a second stamp, a third stamp and a fourth stamp are prepared;

[0008] forming a hole blocking layer on the substrate;

[0009] forming an electron transport layer on the hole blocking layer, wherein the electron transport layer is obtained by transferring the electron transport layer slurry onto the hole blocking layer through the first stamp, followed by drying and sintering;

[0010] forming an insulating spacer layer on the electron transport layer, wherein the insulating spacer layer is obtained by transferring the insulating spacer layer slurry onto the electron transport layer through the second stamp, and then drying and sintering the slurry;

[0011] forming a hole transport layer on the insulating spacer layer, wherein the hole transport layer is obtained by transferring hole transport layer slurry onto the insulating spacer layer through the third stamp, followed by drying and sintering;

[0012] A light-transmitting conductive film electrode is formed on the hole transport layer to obtain a double-light-transmitting non-planar perovskite solar cell, wherein the conductive film is transferred to the hole transport layer through the fourth stamp.

[0013] Optionally, the substrate is a rigid transparent conductive substrate, and is made of any one of glass, quartz and transparent ceramics.

[0014] Optionally, forming a hole blocking layer on the substrate includes: preparing a hole blocking layer on the transparent conductive substrate using a spraying process, wherein the hole blocking layer is any one of a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline organic polymer layer (BCP), a TiO2 dense nanocrystalline layer, and an Al2O3 dense nanocrystalline layer.

[0015] Optionally, forming an electron transport layer on the hole blocking layer comprises:

[0016] Depositing an electron transport layer slurry of a preset pattern and thickness on the first stamp, and transferring it onto the hole blocking layer;

[0017] Drying the electron transport layer slurry to obtain an electron transport layer dry film;

[0018] The conductive substrate with the electron transport layer dry film is sintered to form the electron transport layer on the hole blocking layer.

[0019] Optionally, the first stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil, and the electron transport layer slurry is titanium dioxide, zirconium dioxide, titanium nitride, tin dioxide, cerium dioxide, strontium titanate, zinc stannate, barium stannate, tungsten trioxide, cadmium selenide, silicon dioxide, aluminum trioxide, silicon dioxide, 6,6-phenyl-C61-butyric acid isomethyl ester (PCBM), 2-(4-tert-butylphenyl)-5-(4-biphenyl)-1,3,4-oxadiazole (PBD), 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole] One or more of organic polymers and their derivatives such as (OXD-7), 5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) or 2,4,6-tris[3-(diphenylphosphinoyl)phenyl]-1,3,5-triazole (PO-T2T).

[0020] Optionally, forming an insulating spacer layer on the electron transport layer comprises:

[0021] Depositing an insulating spacer layer slurry of a preset pattern and thickness on the second stamp, and transferring it onto the electron transport layer;

[0022] Drying the insulating spacer layer slurry to obtain an insulating spacer layer dry film;

[0023] The conductive substrate with the insulating spacer layer dry film is sintered to form an insulating spacer layer on the electron transport layer.

[0024] Optionally, the second stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil, and the insulating spacer layer slurry is one or more of zirconium dioxide, aluminum oxide, and silicon dioxide.

[0025] Optionally, forming a hole transport layer on the insulating spacer layer comprises:

[0026] Depositing a hole transport layer slurry of a preset pattern and a preset thickness on the third stamp, and transferring it to the insulating spacer layer;

[0027] Drying the hole transport layer slurry to obtain a hole transport layer dry film;

[0028] Sintering the conductive substrate with the hole transport layer dry film to form a hole transport layer on the insulating spacer layer;

[0029] The third stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil; the hole transport layer slurry is 2,2",7,7"-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), 2,2',7,7'-tetrakis-(N,N,-di-p-methylphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), 9,9′-spirobifluorene (Spiro-TTB), poly (3,4-ethylenedioxythiophene / polystyrene sulfonate (PEDOT:PSS), poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), poly (3-hexylthiophene) (P3HT), p-hexyltrimethylammonium bromide (HTAB), poly (methyl methacrylate): 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (PMMA: F4-TCNQ), poly [N, N'-bis(4-butylphenyl)-N, N'-bis(phenyl)-benzidine] (polyTPD), N,N'-diphenyl-N,N'-bis(1-naphthyl-phenyl 1)-1,1'-biphenyl-4,4'-diamine (NPB), tri(4-carbazolyl-9-ylphenyl)amine (TCTA), 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,4,5,8,9,11-hexaazatribenzohexanecarbonitrile (HAT-CN), 4,4',4''-tri{N-(3-methylphenyl)-N-phenylamino}triphenylamine (m-MTDATA), CuI, CuSCN, NiO, MoO3 or one or more thereof.

[0030] Optionally, a light-transmitting conductive thin film electrode is formed on the hole transport layer to obtain a double-light-transmitting non-planar perovskite solar cell, comprising:

[0031] Depositing a transparent film with a preset pattern on the fourth stamp, and transferring it to the hole transport layer to form the light-transmitting conductive film electrode;

[0032] Drop-coating a perovskite precursor solution on the light-transmitting conductive film electrode, and growing a photosensitive material perovskite crystal by annealing to obtain the dual-light-transmitting non-planar perovskite solar cell;

[0033] Among them, the fourth seal material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chrome foil.

[0034] An embodiment of the present invention further provides a dual-light-transmitting non-planar perovskite solar cell, wherein the dual-light-transmitting non-planar perovskite solar cell is obtained by the following method:

[0035] Providing a substrate having an arc or curvature;

[0036] According to the arc or curvature of the substrate, a first stamp, a second stamp, a third stamp and a fourth stamp are prepared;

[0037] forming a hole blocking layer on the substrate;

[0038] forming an electron transport layer on the hole blocking layer, wherein the electron transport layer is obtained by transferring the electron transport layer slurry onto the hole blocking layer through the first stamp, followed by drying and sintering;

[0039] forming an insulating spacer layer on the electron transport layer, wherein the insulating spacer layer is obtained by transferring the insulating spacer layer slurry onto the electron transport layer through the second stamp, and then drying and sintering the slurry;

[0040] forming a hole transport layer on the insulating spacer layer, wherein the hole transport layer is obtained by transferring hole transport layer slurry onto the insulating spacer layer through the third stamp, followed by drying and sintering;

[0041] A light-transmitting conductive film electrode is formed on the hole transport layer to obtain a double-light-transmitting non-planar perovskite solar cell, wherein the conductive film is transferred to the hole transport layer through the fourth stamp.

[0042] The technical solution of the present invention includes at least the following effects:

[0043] The above scheme of the present invention provides a substrate with an arc or curvature; prepares a first stamp, a second stamp, a third stamp and a fourth stamp according to the arc or curvature of the substrate; forms a hole blocking layer on the substrate; forms an electron transport layer on the hole blocking layer, wherein the electron transport layer is obtained by transferring the electron transport layer slurry onto the hole blocking layer through the first stamp, and then drying and sintering; forms an insulating spacer layer on the electron transport layer, wherein the insulating spacer layer is obtained by transferring the insulating spacer layer slurry onto the electron transport layer through the second stamp, and then drying and sintering; A hole transport layer is formed on the spacer, wherein the hole transport layer is obtained by transferring the hole transport layer slurry to the insulating spacer layer through the third stamp, and then drying and sintering; a light-transmitting conductive film electrode is formed on the hole transport layer to obtain a double-light-transmitting non-planar perovskite solar cell, wherein the conductive film is transferred to the hole transport layer through the fourth stamp, and a stamp with a specific material and pattern can be used to transfer the required film to the target substrate, so that the deposition preparation of various films on the non-planar surface can be achieved in a shorter time, and at the same time, the electrode material can be changed to achieve efficient preparation of light-transmitting non-planar perovskite solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 is a flow chart of a method for preparing a double-light-transmitting non-planar perovskite solar cell provided by an embodiment of the present invention;

[0045] Figure 2 This is a flow chart of transfer preparation of the electron transport layer of a planar mesoscopic perovskite solar cell provided by an embodiment of the present invention;

[0046] Figure 3 It is a flow chart of transfer preparation of electron transport layer of curved mesoscopic perovskite solar cell provided by an embodiment of the present invention;

[0047] Figure 4 It is a flow chart of transfer preparation of electron transport layer of non-planar mesoscopic perovskite solar cell provided by an embodiment of the present invention;

[0048] Figure 5 It is a flow chart of the preparation of a planar light-transmitting mesoscopic perovskite solar cell transparent electrode transfer provided by an embodiment of the present invention;

[0049] Figure 6 It is a flow chart of transfer printing preparation of electrodes for a curved light-transmitting mesoscopic perovskite solar cell provided by an embodiment of the present invention;

[0050] Figure 7 It is a flow chart of transfer printing preparation of electrodes for a non-planar perovskite solar cell without a hole transport layer provided by an embodiment of the present invention;

[0051] Among them, 1. polydimethylsiloxane film; 2. SnO2 mesoporous film; 3. FTO conductive film; 4. quartz substrate; 5. epoxy resin film; 6. TiO2 mesoporous film; 7. glass substrate; 8. polystyrene-polymethyl methacrylate film; 9. WO3 mesoporous film; 10. PE conductive film; 11. silicate gel film; 12. ITO transparent conductive film; 13. ZrO2 mesoporous film; 14. SrTiO3 mesoporous film; 15. transparent ceramic substrate; 16. polyethylene terephthalate film; 17. PI transparent conductive film; 18. Al2O3 mesoporous film; 19. BaSnO3 mesoporous film; 20. ITO conductive film; 21. incident light; 22. transmitted light; 23. polycarbonate film; 24. graphene oxide electrode; 25. Spiro-OMeTAD; 26. SiO2 mesoporous film; 27. CeO2 mesoporous film. DETAILED DESCRIPTION

[0052] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present invention and to enable the scope of the present invention to be fully communicated to those skilled in the art.

[0053] like Figure 1 As shown, an embodiment of the present invention provides a method for preparing a dual-light-transmitting non-planar perovskite solar cell, comprising:

[0054] Step 11, providing a substrate having an arc or curvature;

[0055] Step 12, preparing a first stamp, a second stamp, a third stamp and a fourth stamp according to the arc or curvature of the substrate;

[0056] Step 13, forming a hole blocking layer on the substrate;

[0057] Step 14, forming an electron transport layer on the hole blocking layer, wherein the electron transport layer is obtained by transferring the electron transport layer slurry onto the hole blocking layer through a first stamp, followed by drying and sintering;

[0058] Step 15, forming an insulating spacer layer on the electron transport layer, wherein the insulating spacer layer is obtained by transferring the insulating spacer layer slurry onto the electron transport layer through a second stamp, and then drying and sintering;

[0059] Step 16, forming a hole transport layer on the insulating spacer layer, wherein the hole transport layer is obtained by transferring the hole transport layer slurry onto the insulating spacer layer through the third stamp, and then drying and sintering.

[0060] Step 17, forming a light-transmitting conductive film electrode on the hole transport layer to obtain a double-light-transmitting non-planar perovskite solar cell, wherein the conductive film is transferred to the hole transport layer through the fourth stamp.

[0061] In this example, a rigid transparent conductive substrate with a certain curvature or curvature is designed according to actual needs. The rigid transparent conductive substrate includes glass, quartz, transparent ceramics, etc., taking glass as an example (the curvature ranges from 0 to 2π, and the curvature can be any value); at the same time, corresponding transfer stamps are prepared according to the obtained conductive substrate (i.e., the first, second, third and fourth stamps, which are tools used to transfer specific materials or structures from one substrate to another in the solar cell manufacturing process), and the curvature or curvature of the transfer stamp is consistent with the curvature or curvature of the substrate, that is, the curvature ranges from 0 to 2π, and the curvature can also be any value; a hole blocking layer is formed on the substrate, and the electron transport layer slurry, the insulating spacer layer slurry, and the transparent film are transferred to the substrate in turn by the transfer stamp in a transfer manner to form an electron transport layer, an insulating spacer layer, a hole transport layer and a conductive film, and finally a double-transmittance non-planar perovskite solar cell is obtained. This method for preparing dual-light-transmitting non-planar perovskite solar cells is based on transfer printing, which uses a stamp of specific material and pattern to transfer the required film to the target substrate. It can achieve the deposition and preparation of various thin films on a non-planar surface in a relatively short time, and at the same time change the electrode material to achieve efficient preparation of light-transmitting non-planar perovskite solar cells.

[0062] In an optional embodiment, the embodiment of the present invention provides that step 13 may include:

[0063] Step 131, preparing a hole blocking layer on the transparent conductive substrate by a spraying process, wherein the hole blocking layer is any one of a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline organic polymer layer (BCP), a TiO2 dense nanocrystalline layer, and an Al2O3 dense nanocrystalline layer.

[0064] Specifically, a transparent conductive substrate is placed on a high-temperature hot stage for heating, and a hole blocking layer is prepared on the FTO film of the conductive substrate by solution spraying. The hole blocking layer is any one of a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline organic polymer layer (BCP), a TiO2 dense nanocrystalline layer, and an Al2O3 dense nanocrystalline layer.

[0065] In an optional embodiment, the embodiment of the present invention provides that step 14 may include:

[0066] Step 141, depositing an electron transport layer slurry with a preset pattern and thickness on the first stamp, and transferring it to the hole blocking layer;

[0067] Step 142, drying the electron transport layer slurry to obtain an electron transport layer dry film;

[0068] Step 143 , sintering the conductive substrate with the electron transport layer dry film to form an electron transport layer on the hole blocking layer.

[0069] Specifically, using mesoporous TiO2 slurry, the first stamp material is polydimethylsiloxane, first depositing a mesoporous electron transport layer (TiO2) slurry of the required pattern and thickness on the first stamp, then transferring it to the conductive substrate corresponding to the deposited hole blocking layer and using an oven to dry the slurry to obtain the required dry film, and finally transferring the substrate with the dry film to a sintering furnace for high-temperature sintering to finally obtain the required mesoporous electron transport layer; the mesoporous electron transport layer slurry includes titanium dioxide , zirconium dioxide, titanium nitride, tin dioxide, cerium dioxide, strontium titanate, zinc stannate, barium stannate, tungsten trioxide, cadmium selenide, silicon dioxide, aluminum oxide, silicon dioxide, 6,6-phenyl-C61-butyric acid isomethyl ester (PCBM), 2-(4-tert-butylphenyl)-5-(4-biphenyl)-1,3,4-oxadiazole (PBD), 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole] (OXD-7), 5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) or 2,4,6-tris[3-(diphenylphosphinoyl)phenyl]-1,3,5-triazole (PO-T2T) and their derivatives; the first stamp material may also include one or more of epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, chrome foil.

[0070] In an optional embodiment, the embodiment of the present invention provides that step 15 may include:

[0071] Step 151, depositing an insulating spacer layer slurry with a preset pattern and thickness on the second stamp, and transferring it to the electron transport layer deposited thereon;

[0072] Step 152, drying the insulating spacer layer slurry to obtain an insulating spacer layer dry film;

[0073] Step 153, sintering the conductive substrate with the insulating spacer layer dry film to form an insulating spacer layer on the electron transport layer.

[0074] Specifically, with mesoporous ZrO2 slurry, the second stamp material is epoxy resin, and the insulating spacer (mesoporous ZrO2) layer slurry of the required pattern and thickness is first deposited on the second stamp, and then transferred to the corresponding electron transport layer and the slurry is dried in an oven. After the insulating spacer (mesoporous ZrO2) layer slurry is dried, the substrate of the deposited dry film is transferred to a sintering furnace for high-temperature sintering, and finally the required mesoporous film frame is successfully prepared; wherein the insulating spacer layer slurry is one or more of zirconium dioxide, aluminum oxide, and silicon dioxide; the second stamp material can also include one or more of polydimethylsiloxane, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil.

[0075] In an optional embodiment, the embodiment of the present invention provides that step 16 may include:

[0076] Step 161, depositing a hole transport layer slurry of a preset pattern on the third stamp, and transferring it to the insulating spacer layer;

[0077] Step 162 , drying or sintering the hole transport layer slurry to obtain a hole transport layer.

[0078] Specifically, the third stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil, and the hole transport layer slurry is 2,2",7,7"-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), 2,2',7,7'-tetrakis-(N,N,-di-p-methylphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), amino)-9,9′-spirobifluorene (Spiro-TTB), poly 3,4-ethylenedioxythiophene / polystyrene sulfonate (PEDOT:PSS), poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), poly (3-hexylthiophene) (P3HT), p-hexyltrimethylammonium bromide (HTAB), poly (methyl methacrylate): 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (PMMA: F4-TCNQ), poly [N, N'-bis(4-butylphenyl)-N, N'-bis(phenyl)-benzidine] (polyTPD), N,N'-diphenyl-N,N'-bis(1-naphthyl-phenyl 1)-1,1'-biphenyl-4,4'-diamine (NPB), tri(4-carbazolyl-9-ylphenyl)amine (TCTA), 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,4,5,8,9,11-hexaazatribenzohexanecarbonitrile (HAT-CN), 4,4',4''-tri{N-(3-methylphenyl)-N-phenylamino}triphenylamine (m-MTDATA), CuI, CuSCN, NiO, MoO3 or one or more thereof.

[0079] In an optional embodiment, the embodiment of the present invention provides that step 17 may include:

[0080] Step 171, depositing a transparent film with a preset pattern on the fourth stamp, and transferring it to the hole transport layer to form a light-transmitting conductive film electrode;

[0081] Step 172, dripping a perovskite precursor solution on the conductive film electrode, and growing a photosensitive material perovskite crystal by annealing to obtain a double-light-transmitting non-planar perovskite solar cell.

[0082] Specifically, the transparent film is a transparent ITO conductive film, the fourth stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil, an ITO conductive film of the required pattern is deposited on the fourth stamp, and then transferred to the corresponding hole transport layer to finally obtain a light-transmitting non-planar perovskite solar cell; the transparent conductive film is a hybrid electrode integrated with transparent conductive metal oxides, carbon-based materials (such as carbon nanotubes and graphene), conductive polymers, metal materials (metal nanowires, ultra-thin metal films and metal meshes) and composite materials. Metal oxides include aluminum-doped zinc oxide, FTO, ITO, WO3, Al2O3, NiO, TiN, TiO2, etc.; carbon-based materials include one-dimensional carbon nanotubes, two-dimensional graphene materials, graphene and its derivatives (such as graphene oxide and reduced graphene oxide) and carbon nanofibers, etc.; conductive polymers include polyaniline (PANI), polypyrrole (PPY), polythiophene (PTH), poly (3,4-ethylenedioxythiophene) (PEDOT), poly (m-phenylenediamine) (PMPD), polyphenylene diamine (P The materials include poly(vinyl terephthalate), poly(ethylene terephthalate), poly(ethylene glycol) (PD), polynaphthylamine (PNA), polyethylene terephthalate (PPS), polyethylene terephthalate (PPV), polyacetylene (PAC), polyfluorene (PF), polyethylene terephthalate (PET), polynaphthalene (PN), polyacetylene (PA) and poly(3-hexylthiophene) (P3HT); metal nanowires include precious metal nanowires such as gold and silver; ultra-thin metal films include gold, silver, copper, aluminum, chromium, nickel and other metal films; metal meshes include gold metal meshes, silver metal meshes, copper metal meshes, etc.

[0083] The embodiment of the present invention further provides a dual-light-transmitting non-planar perovskite solar cell, and the dual-light-transmitting non-planar perovskite solar cell is obtained by the following method:

[0084] Providing a substrate having an arc or curvature;

[0085] According to the arc or curvature of the substrate, a first stamp, a second stamp, a third stamp and a fourth stamp are prepared;

[0086] forming a hole blocking layer on the substrate;

[0087] forming an electron transport layer on the hole blocking layer, wherein the electron transport layer is obtained by transferring the electron transport layer slurry onto the hole blocking layer through the first stamp, followed by drying and sintering;

[0088] forming an insulating spacer layer on the electron transport layer, wherein the insulating spacer layer is obtained by transferring the insulating spacer layer slurry onto the electron transport layer through the second stamp, and then drying and sintering the slurry;

[0089] forming a hole transport layer on the insulating spacer layer, wherein the hole transport layer is obtained by transferring hole transport layer slurry onto the insulating spacer layer through the third stamp, followed by drying and sintering;

[0090] A light-transmitting conductive film electrode is formed on the hole transport layer to obtain a double-light-transmitting non-planar perovskite solar cell, wherein the conductive film is transferred to the hole transport layer through the fourth stamp.

[0091] Optionally, the substrate is a rigid transparent conductive substrate, and is made of any one of glass, quartz and transparent ceramics.

[0092] Optionally, forming a hole blocking layer on the substrate includes: preparing a hole blocking layer on the transparent conductive substrate using a spraying process, wherein the hole blocking layer is any one of a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline organic polymer layer (BCP), a TiO2 dense nanocrystalline layer, and an Al2O3 dense nanocrystalline layer.

[0093] Optionally, forming an electron transport layer on the hole blocking layer comprises:

[0094] Depositing an electron transport layer slurry of a preset pattern and thickness on the first stamp, and transferring it onto the hole blocking layer;

[0095] Drying the electron transport layer slurry to obtain an electron transport layer dry film;

[0096] The conductive substrate with the electron transport layer dry film is sintered to form the electron transport layer on the hole blocking layer.

[0097] Optionally, the first stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil, and the electron transport layer slurry is titanium dioxide, zirconium dioxide, titanium nitride, tin dioxide, cerium dioxide, strontium titanate, zinc stannate, barium stannate, tungsten trioxide, cadmium selenide, silicon dioxide, aluminum trioxide, silicon dioxide, 6,6-phenyl-C61-butyric acid isomethyl ester (PCBM), 2-(4-tert-butylphenyl)-5-(4-biphenyl)-1,3,4-oxadiazole (PBD), 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole] One or more of organic polymers and their derivatives such as (OXD-7), 5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) or 2,4,6-tris[3-(diphenylphosphinoyl)phenyl]-1,3,5-triazole (PO-T2T).

[0098] Optionally, forming an insulating spacer layer on the electron transport layer comprises:

[0099] Depositing an insulating spacer layer slurry of a preset pattern and thickness on the second stamp, and transferring it onto the electron transport layer;

[0100] Drying the insulating spacer layer slurry to obtain an insulating spacer layer dry film;

[0101] The conductive substrate with the insulating spacer layer dry film is sintered to form an insulating spacer layer on the electron transport layer.

[0102] Optionally, the second stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil, and the insulating spacer layer slurry is one or more of zirconium dioxide, aluminum oxide, and silicon dioxide.

[0103] Optionally, forming a hole transport layer on the insulating spacer layer comprises:

[0104] Depositing a hole transport layer slurry of a preset pattern and a preset thickness on the third stamp, and transferring it to the insulating spacer layer;

[0105] Drying the hole transport layer slurry to obtain a hole transport layer dry film;

[0106] Sintering the conductive substrate with the hole transport layer dry film to form a hole transport layer on the insulating spacer layer;

[0107] The third stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil; the hole transport layer slurry is 2,2",7,7"-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), 2,2',7,7'-tetrakis-(N,N,-di-p-methylphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), 9,9′-spirobifluorene (Spiro-TTB), poly (3,4-ethylenedioxythiophene / polystyrene sulfonate (PEDOT:PSS), poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), poly (3-hexylthiophene) (P3HT), p-hexyltrimethylammonium bromide (HTAB), poly (methyl methacrylate): 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (PMMA:F4-TCNQ), poly [N, N'-bis(4-butylphenyl)-N, N'-bis(phenyl)-benzidine] (polyTPD), N,N'-diphenyl-N,N'-bis(1-naphthyl-phenyl 1)-1,1'-biphenyl-4,4'-diamine (NPB), tri(4-carbazolyl-9-ylphenyl)amine (TCTA), 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,4,5,8,9,11-hexaazatribenzohexanecarbonitrile (HAT-CN), 4,4',4''-tri{N-(3-methylphenyl)-N-phenylamino}triphenylamine (m-MTDATA), CuI, CuSCN, NiO, MoO3 or one or more thereof.

[0108] Optionally, a light-transmitting conductive thin film electrode is formed on the hole transport layer to obtain a double-light-transmitting non-planar perovskite solar cell, comprising:

[0109] Depositing a transparent film with a preset pattern on the fourth stamp, and transferring it to the hole transport layer to form the light-transmitting conductive film electrode;

[0110] Drop-coating a perovskite precursor solution on the light-transmitting conductive film electrode, and growing a photosensitive material perovskite crystal by annealing to obtain the dual-light-transmitting non-planar perovskite solar cell;

[0111] Among them, the fourth seal material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chrome foil.

[0112] The technical solution of the present invention can utilize a stamp of specific material and pattern to transfer the desired thin film to a target substrate, and can realize the deposition preparation of various thin films on a non-planar surface in a relatively short time, while changing the electrode material to realize the efficient preparation of a light-transmitting non-planar perovskite solar cell.

[0113] Example 1

[0114] This embodiment 1 provides a method for preparing a non-planar perovskite solar cell, comprising the following steps:

[0115] Step 101, take a specially shaped FTO conductive glass as a substrate, the arc is π / 6, the substrate size is 100mm×100mm, such as Figure 3 As shown; according to the selected glass substrate shape, a suitable and matching transfer stamp is prepared. In this embodiment, the first stamp material is epoxy resin, the second stamp material is polystyrene, the third stamp material is polymethyl methacrylate, and the fourth stamp material is polybutadiene-styrene.

[0116] Step 102, placing the FTO conductive glass on a high temperature hot stage, heating it to 450°C, and preparing a hole blocking layer on the FTO film of the conductive substrate by solution spraying, wherein the hole blocking layer is dense titanium dioxide with a thickness of 5 nm.

[0117] Step 103, preparing an electron transport layer on the hole blocking layer obtained in step 102, wherein the electron transport layer is TiO2; firstly, using a first stamp to pick up the TiO2 slurry, and then transferring it to the FTO conductive glass to obtain a TiO2 wet film with a fixed pattern and uniform thickness (500nm), and then transferring the substrate to an oven to dry the obtained wet film, and finally entering a sintering furnace to sinter at a high temperature of 500°C for 40 minutes to obtain a mesoporous electron transport layer.

[0118] Step 104, preparing an insulating spacer layer on the mesoporous electron transport layer obtained in step 103, wherein the insulating spacer layer is ZrO2; firstly using a second stamp to pick up the ZrO2 slurry, and then transferring it to the TiO2 electron transport layer to obtain a ZrO2 wet film with a fixed pattern and uniform thickness (3µm), and then transferring the substrate with the printed ZrO2 wet film to an oven for drying.

[0119] Step 105, preparing a hole transport layer on the insulating spacer layer obtained in step 104, wherein the hole transport layer is NiO; firstly using a third stamp to pick up NiO slurry, and then transferring it to the ZrO2 insulating spacer layer to obtain a NiO wet film with a fixed pattern and uniform thickness (150nm), and then transferring the substrate with the printed NiO wet film to an oven for drying.

[0120] Step 106, preparing a counter electrode layer on the hole transport layer obtained in step 105, wherein the counter electrode layer slurry is nanosilver; firstly, the nanosilver is picked up with the fourth stamp, and then transferred to the NiO dry film to obtain a nanosilver wet film with a fixed pattern and uniform thickness (30µm), and then the substrate with the printed nanosilver wet film is transferred to an oven for drying, and finally the substrate and the film are placed in a sintering furnace and sintered at 400°C for 40 minutes to obtain a mesoporous insulating spacer layer, a hole transport layer and a nanosilver counter electrode layer.

[0121] Step 107, coating a perovskite precursor solution on the mesoporous carbon counter electrode layer obtained in step 106, wherein the perovskite precursor solution enters the mesoporous electron transport layer, the insulating spacer layer, the hole transport layer and the silver counter electrode layer having a mesoporous structure through capillary action, and grows and crystallizes, thereby obtaining a transfer-printed non-planar mesoporous perovskite solar cell; wherein the solute of the perovskite precursor solution is iodine lead methylamine.

[0122] Comparative Example 1

[0123] This comparative example 1 provides a method for preparing a dual-light-transmitting non-planar perovskite solar cell, comprising the following steps:

[0124] Step 201, take a specially shaped ITO conductive glass as a substrate, the arc is π / 8, the substrate size is 100mm×100mm, such as Figure 6 As shown; according to the selected glass substrate shape, a suitable and matching transfer stamp is prepared, wherein the first stamp material is polydimethylsiloxane, the second stamp material is silica gel, the third stamp material is polyethylene terephthalate, and the fourth stamp material is epoxy resin.

[0125] Step 202, placing the ITO conductive glass on a high temperature hot stage, heating it to 380°C, and preparing a hole blocking layer on the ITO film of the conductive substrate by solution spraying, wherein the hole blocking layer is dense aluminum oxide with a thickness of 2nm.

[0126] Step 203, preparing an electron transport layer on the hole blocking layer obtained in step 202, wherein the electron transport layer is BaSnO3; firstly, using a first stamp to pick up BaSnO3 slurry, and then transferring it to the ITO conductive glass to obtain a BaSnO3 wet film with a fixed pattern and uniform thickness (800nm), and then transferring the substrate to an oven to dry the obtained wet film, and finally entering a sintering furnace to sinter at a high temperature of 400°C for 30 minutes to obtain a mesoporous electron transport layer.

[0127] Step 204, preparing an insulating spacer layer on the mesoporous electron transport layer obtained in step 203, wherein the insulating spacer layer is Al2O3; firstly, using a second stamp to pick up Al2O3 slurry, and then transferring it to the BaSnO3 electron transport layer to obtain an Al2O3 wet film with a fixed pattern and uniform thickness (2µm), and then transferring the substrate with the printed Al2O3 wet film to an oven for drying, and finally placing the substrate in a sintering furnace and sintering at 400°C for 40 minutes to obtain the mesoporous insulating spacer layer.

[0128] Step 205, preparing a hole transport layer on the mesoporous insulating spacer layer obtained in step 204, wherein the hole transport layer is 2,2",7,7"-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD); first use the third stamp to pick up the Spiro-OMeTAD slurry, and then transfer it to the Al2O3 insulating spacer layer to obtain a Spiro-OMeTAD wet film with a fixed pattern and uniform thickness (100nm), and then transfer the substrate printed with the Spiro-OMeTAD wet film to an oven for drying.

[0129] Step 206, coating the hole transport layer obtained in step 205 with a perovskite precursor solution, wherein the perovskite precursor solution enters the mesoporous electron transport layer and the insulating spacer layer having a mesoporous structure through capillary action and grows and crystallizes; wherein the solute of the perovskite precursor solution is iodine lead formamidine.

[0130] Step 207, covering the hole transport layer obtained in step 206 with a transparent electrode, wherein the transparent electrode is a PI transparent conductive film; firstly using a third stamp to adhere the PI transparent conductive film with a fixed pattern, and then transferring it to the insulating spacer layer, thereby obtaining a transfer-printed curved light-transmitting perovskite solar cell.

[0131] Comparative Example 2

[0132] This comparative example 2 provides a method for preparing a non-planar perovskite solar cell without a hole transport layer, comprising the following steps:

[0133] Step 301, take a specially shaped FTO conductive glass as a substrate, the arc is π / 6, the substrate size is 100mm×100mm, such as Figure 7 As shown; according to the selected glass substrate shape, a suitable and matching transfer stamp is prepared, wherein the first stamp material is polymethyl methacrylate, the second stamp material is chrome foil, and the third stamp material is polycarbonate.

[0134] Step 302, placing the FTO conductive glass on a high temperature hot stage, heating it to 450°C, and preparing a hole blocking layer on the FTO film of the conductive substrate by solution spraying, wherein the hole blocking layer is dense aluminum oxide with a thickness of 3nm.

[0135] Step 303, preparing an electron transport layer on the hole blocking layer obtained in step 302, wherein the electron transport layer is CeO2; firstly, using a first stamp to pick up CeO2 slurry, and then transferring it to FTO conductive glass to obtain a CeO2 wet film with a fixed pattern and uniform thickness (300nm), and then transferring the substrate to an oven to dry the obtained wet film, and finally entering a sintering furnace to sinter at 300°C for 30 minutes to obtain a mesoporous electron transport layer.

[0136] Step 304, preparing an insulating spacer layer on the mesoporous electron transport layer obtained in step 303, wherein the insulating spacer layer is SiO2; firstly, using a second stamp to pick up SiO2 slurry, and then transferring it to the SiO2 electron transport layer to obtain a SiO2 wet film with a fixed pattern and uniform thickness (4µm), and then transferring the substrate with the printed SiO2 wet film to an oven for drying, and finally placing the substrate in a sintering furnace and sintering at 550°C for 30 minutes to obtain the mesoporous insulating spacer layer.

[0137] Step 305, coating a perovskite precursor solution on the mesoporous insulating spacer layer obtained in step 304, wherein the perovskite precursor solution enters the mesoporous electron transport layer and the insulating spacer layer having a mesoporous structure through capillary action and grows and crystallizes; wherein the solute of the perovskite precursor solution is iodine lead methylamine.

[0138] Step 306, preparing a counter electrode layer on the insulating spacer layer obtained in step 305, wherein the counter electrode layer slurry is graphene oxide; firstly, the graphene oxide slurry is picked up with a third stamp, and then transferred to the SiO2 dry film to obtain a graphene oxide wet film with a fixed pattern and uniform thickness (20µm), and then the substrate with the printed graphene oxide wet film is transferred to an oven for drying, thereby obtaining a non-planar mesoporous perovskite solar cell without a hole transport layer.

[0139] Comparative Example 3

[0140] This comparative example 3 comprises the following steps:

[0141] Step 401, taking a conventional standard flat conductive glass as a substrate, the substrate size is 100mm×100mm; wherein the conductive substrate is one of FTO conductive glass and ITO conductive glass.

[0142] Step 402, placing the FTO conductive glass on a high temperature hot stage, heating it to 450°C, and preparing a hole blocking layer on the FTO film of the conductive substrate by solution spraying, wherein the hole blocking layer is dense titanium dioxide with a thickness of 4 nm.

[0143] Step 403, preparing an electron transport layer on the hole blocking layer obtained in step 402, wherein the electron transport layer is TiO2; screen printing the electron transport layer slurry onto the hole blocking layer through a 200-mesh screen to obtain a TiO2 wet film with a fixed pattern and uniform thickness (500nm), and then transferring the substrate to an oven to dry the obtained wet film, and finally entering a sintering furnace for high-temperature sintering at 500°C for 40 minutes to obtain a mesoporous electron transport layer.

[0144] Step 404, preparing an insulating spacer layer on the mesoporous electron transport layer obtained in step 403, wherein the insulating spacer layer is ZrO2; screen-printing the insulating spacer layer slurry onto the mesoporous electron transport layer through a 250-mesh screen to obtain a ZrO2 wet film with a fixed pattern and uniform thickness (4µm), and then transferring the substrate with the printed ZrO2 wet film to an oven for drying.

[0145] Step 405, preparing a hole transport layer on the mesoporous insulating spacer layer obtained in step 404, wherein the hole transport layer in this comparative example is CuSCN; screen printing the hole transport layer slurry onto the mesoporous insulating spacer layer through a 200-mesh screen to obtain a CuSCN wet film with a fixed pattern and uniform thickness (200 nm), and then transferring the substrate with the printed CuSCN wet film to an oven for drying.

[0146] Step 406, preparing a carbon counter electrode layer on the hole transport layer obtained in step 405, wherein the counter electrode layer is a carbon slurry; screen printing the carbon slurry onto the insulating spacer layer through a 150-mesh screen to obtain a carbon wet film with a fixed pattern and uniform thickness (30µm), and then transferring the substrate of the printed carbon wet film to an oven for drying, and finally placing the substrate and the film into a sintering furnace and sintering at 400°C for 40 minutes to simultaneously obtain a mesoporous insulating spacer layer, a hole transport layer and a mesoporous carbon counter electrode layer.

[0147] Step 407, coating a perovskite precursor solution on the mesoporous carbon counter electrode layer obtained in step 406, the perovskite precursor solution enters the mesoporous electron transport layer, the insulating spacer layer, the hole transport layer and the carbon counter electrode layer having a mesoporous structure through capillary action, and grows and crystallizes, thereby obtaining a transfer-printed double-transmittance non-planar perovskite solar cell; wherein the solute of the perovskite precursor solution is iodine lead methylamine.

[0148] The difference between Example 1 and Comparative Examples 1 to 3 is that: the substrate of Comparative Example 1 is a standard plane (radian is π); the area is 100cm 2The photoelectric performance of Example 1 and Comparative Examples 1 to 3 were tested, and the test results are shown in Table 1.

[0149] Table 1 Comparison of photoelectric performance test results

[0150]

[0151] It can be seen from Table 1 that for Example 1 and Comparative Example 3, in Example 1, due to the curvature of the substrate, the electron transport layer, the insulating spacer layer, the hole transport layer and the counter electrode layer are prepared by transfer printing, and the non-planar substrate can improve the utilization rate of light, thereby reducing the transmittance of the device.

[0152] For Example 1 and Comparative Example 1, the introduction of the transparent electrode in Comparative Example 1 can effectively improve the overall light transmittance of the device and realize the preparation of a curved double-light-transmitting perovskite solar cell.

[0153] For Example 1 and Comparative Example 2, the hole transport layer is one of the core transport layers of the perovskite battery, and plays an important role in regulating the defect chemistry and charge carrier dynamics at the interface. In Comparative Example 2, there is no hole transport layer as a functional layer. Since perovskite has bipolar transport characteristics, the device structure without a hole transport layer can still work effectively. The addition of the hole transport layer in Example 1 helps to regulate the crystallization and growth of the perovskite photoactive material, optimize the device band structure to achieve energy level alignment, and promote efficient extraction and directional transmission of carriers (i.e., extracting holes from the photoactive layer and transmitting the holes to the corresponding electrodes, while blocking the leakage, entry and transmission of electrons), and ultimately achieves an improvement in the energy conversion efficiency of the mesoporous device.

[0154] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific implementation", or "some implementations" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example.

[0155] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A method for preparing a double-transmittance non-planar perovskite solar cell, characterized in that: include: Providing a substrate having an arc or curvature; According to the arc or curvature of the substrate, a first stamp, a second stamp, a third stamp and a fourth stamp are prepared; forming a hole blocking layer on the substrate; forming an electron transport layer on the hole blocking layer, wherein the electron transport layer is obtained by transferring the electron transport layer slurry onto the hole blocking layer through the first stamp, followed by drying and sintering; forming an insulating spacer layer on the electron transport layer, wherein the insulating spacer layer is obtained by transferring the insulating spacer layer slurry onto the electron transport layer through the second stamp, and then drying and sintering the slurry; forming a hole transport layer on the insulating spacer layer, wherein the hole transport layer is obtained by transferring hole transport layer slurry onto the insulating spacer layer through the third stamp, followed by drying and sintering; A light-transmitting conductive film electrode is formed on the hole transport layer, wherein the conductive film is transferred onto the hole transport layer through the fourth stamp.

2. The method for preparing a dual-light-transmitting non-planar perovskite solar cell according to claim 1, characterized in that: The substrate is a rigid transparent conductive substrate.

3. The method for preparing a dual-light-transmitting non-planar perovskite solar cell according to claim 2, characterized in that: Forming a hole blocking layer on the substrate comprises: preparing the hole blocking layer on the rigid transparent conductive substrate by a spraying process, wherein the hole blocking layer is any one of a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline organic polymer layer (BCP), a TiO2 dense nanocrystalline layer and an Al2O3 dense nanocrystalline layer.

4. The method for preparing a dual-light-transmitting non-planar perovskite solar cell according to claim 1, characterized in that: Forming an electron transport layer on the hole blocking layer, comprising: Depositing an electron transport layer slurry of a preset pattern and thickness on the first stamp, and transferring it onto the hole blocking layer; Drying the electron transport layer slurry to obtain an electron transport layer dry film; The conductive substrate with the electron transport layer dry film is sintered to form the electron transport layer on the hole blocking layer.

5. The method for preparing a dual-light-transmitting non-planar perovskite solar cell according to claim 4, characterized in that: The first stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil. The electron transport layer slurry includes titanium dioxide, zirconium dioxide, titanium nitride, tin dioxide, cerium dioxide, strontium titanate, zinc stannate, barium stannate, tungsten trioxide, cadmium selenide, silicon dioxide, aluminum trioxide, silicon dioxide, 6,6-phenyl-C61-butyric acid isomethyl ester (PCBM), 2-(4-tert-butylphenyl)-5-(4-biphenyl)-1,3,4-oxadiazole (PBD), 2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole] (OXD-7), 5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) or 2,4,6-tris[3-(diphenylphosphinoyl)phenyl]-1,3,5-triazole (PO-T2T).

6. The method for preparing a dual-light-transmitting non-planar perovskite solar cell according to claim 1, characterized in that: Forming an insulating spacer layer on the electron transport layer, comprising: Depositing an insulating spacer layer slurry of a preset pattern and thickness on the second stamp, and transferring it onto the electron transport layer; Drying the insulating spacer layer slurry to obtain an insulating spacer layer dry film; The conductive substrate with the insulating spacer layer dry film is sintered to form an insulating spacer layer on the electron transport layer.

7. The method for preparing a dual-light-transmitting non-planar perovskite solar cell according to claim 6, characterized in that: The second seal material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil; the insulating spacer layer slurry is one or more of zirconium dioxide, aluminum oxide, and silicon dioxide.

8. The method for preparing a dual-light-transmitting non-planar perovskite solar cell according to claim 1, characterized in that: Forming a hole transport layer on the insulating spacer layer, comprising: Depositing a hole transport layer slurry of a preset pattern and a preset thickness on the third stamp, and transferring it to the insulating spacer layer; Drying the hole transport layer slurry to obtain a hole transport layer dry film; Sintering the conductive substrate with the hole transport layer dry film to form a hole transport layer on the insulating spacer layer; The third stamp material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chromium foil; the hole transport layer slurry is 2,2",7,7"-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), 2,2',7,7'-tetrakis-(N,N,-di-p-methylphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), 9,9′-spirobifluorene (Spiro-TTB), poly (3,4-ethylenedioxythiophene / polystyrene sulfonate (PEDOT:PSS), poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), poly (3-hexylthiophene) (P3HT), p-hexyltrimethylammonium bromide (HTAB), poly (methyl methacrylate): 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (PMMA: F4-TCNQ), poly [N, N'-bis(4-butylphenyl)-N, N'-bis(phenyl)-benzidine] (polyTPD), N,N'-diphenyl-N,N'-bis(1-naphthyl-phenyl 1)-1,1'-biphenyl-4,4'-diamine (NPB), tri(4-carbazolyl-9-ylphenyl)amine (TCTA), 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,4,5,8,9,11-hexaazatribenzohexanecarbonitrile (HAT-CN), 4,4',4''-tri{N-(3-methylphenyl)-N-phenylamino}triphenylamine (m-MTDATA), CuI, CuSCN, NiO, MoO3 or one or more thereof.

9. The method for preparing a dual-light-transmitting non-planar perovskite solar cell according to claim 1, characterized in that: A light-transmitting conductive film electrode is formed on the hole transport layer to obtain a double-light-transmitting non-planar perovskite solar cell, comprising: Depositing a transparent film with a preset pattern on the fourth stamp, and transferring it to the hole transport layer to form the light-transmitting conductive film electrode; Drop-coating a perovskite precursor solution on the light-transmitting conductive film electrode, and growing a photosensitive material perovskite crystal by annealing to obtain the dual-light-transmitting non-planar perovskite solar cell; Among them, the fourth seal material includes one or more of polydimethylsiloxane, epoxy resin, polystyrene, polymethyl methacrylate, silica gel, polyethylene terephthalate, polyetherimide, polybutadiene-styrene, polycarbonate, copper foil, and chrome foil.

10. A dual-light-transmitting non-planar perovskite solar cell, characterized in that: The dual-light-transmitting non-planar perovskite solar cell is obtained by the following method: Providing a substrate having an arc or curvature; According to the arc or curvature of the substrate, a first stamp, a second stamp, a third stamp and a fourth stamp are prepared; forming a hole blocking layer on the substrate; forming an electron transport layer on the hole blocking layer, wherein the electron transport layer is obtained by transferring the electron transport layer slurry onto the hole blocking layer through the first stamp, followed by drying and sintering; forming an insulating spacer layer on the electron transport layer, wherein the insulating spacer layer is obtained by transferring the insulating spacer layer slurry onto the electron transport layer through the second stamp, and then drying and sintering the slurry; forming a hole transport layer on the insulating spacer layer, wherein the hole transport layer is obtained by transferring hole transport layer slurry onto the insulating spacer layer through the third stamp, followed by drying and sintering; A light-transmitting conductive film electrode is formed on the hole transport layer, wherein the conductive film is transferred onto the hole transport layer through the fourth stamp.

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