Cooling systems, process chambers and semiconductor processing equipment

Abstract

The present invention provides a heat dissipation system, a process chamber and a semiconductor processing equipment. The heat dissipation system includes a heat sink and a support. The heat sink is provided with a heat dissipation surface on the side of the heat sink facing the heating disk carrying the wafer. The heat dissipation surface is divided into a plurality of heat dissipation areas, a first heat dissipation area with a higher first heat dissipation efficiency is aligned with the high temperature area of ​​the heating disk, and a second heat dissipation area with a lower second heat dissipation efficiency is aligned with the low temperature area of ​​the heating disk. The first end of the support is connected to the heat sink, and the second end is connected to the lifting base of the heating disk to drive the heat sink to rise and fall synchronously with the heating disk. The present invention can be provided by arranging a heat dissipation control plate under the heating disk, and differentially designing heat dissipation areas with different efficiencies according to the temperature distribution of the heating disk, so as to meet the heat dissipation requirements of different areas of the heating disk without changing the structure of the heating disk, thereby improving the temperature uniformity of the surface of the heating disk.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a heat dissipation system, a process chamber, and a semiconductor processing equipment. Background Art

[0002] In existing semiconductor processing equipment, such as chemical vapor deposition equipment (CVD), the performance of the heating disk assembly has a great influence on the performance of the thin film deposition process, especially the temperature uniformity of the wafer. With the development of process requirements, the requirements for wafer temperature uniformity are getting higher and higher. Therefore, there are higher requirements for the temperature uniformity of the surface of the heating disk assembly. However, in the actual production and research and development process, it is relatively difficult to optimize the structure of the heating disk itself, and there are disadvantages such as high research and development costs and long cycles. In addition, the method of dissipating heat from the heating disk only by setting up a liquid cooling device has the disadvantages of uneven heat dissipation, high cost, and complex process, and it is impossible to design heat dissipation according to the heat dissipation requirements of different areas of the heating disk.

[0003] In order to overcome the above-mentioned defects of the prior art, an improved heat dissipation system is urgently needed in the art to meet the heat dissipation requirements of different areas of the heating plate without changing the structure of the heating plate, thereby improving the temperature uniformity of the surface of the heating plate. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects of the prior art, the present invention provides a heat dissipation system, a process chamber and a semiconductor processing equipment. A heat dissipation control plate is arranged under the heating disk, and heat dissipation areas with different efficiencies are differentially designed according to the temperature distribution of the heating disk. The system is used to meet the heat dissipation requirements of different areas of the heating disk without changing the structure of the heating disk, thereby improving the temperature uniformity of the surface of the heating disk.

[0006] Specifically, the heat dissipation system provided according to the first aspect of the present invention includes a heat sink and a support. The heat sink is provided with a heat dissipation surface on one side of the heating plate that carries the wafer. The heat dissipation surface is divided into a plurality of heat dissipation areas, a first heat dissipation area with a higher first heat dissipation efficiency is aligned with the high temperature area of ​​the heating plate, and a second heat dissipation area with a lower second heat dissipation efficiency is aligned with the low temperature area of ​​the heating plate. The first end of the support is connected to the heat sink, and the second end thereof is connected to the lifting base of the heating plate, so as to drive the heat sink to rise and fall synchronously with the heating plate.

[0007] Further, in some embodiments of the present invention, the plurality of heat dissipation regions have different heights. The first heat dissipation region has a larger first height to maintain a smaller first heat dissipation distance with the high temperature region of the heating plate. The second heat dissipation region has a smaller second height to maintain a larger second heat dissipation distance with the low temperature region of the heating plate.

[0008] Furthermore, in some embodiments of the present invention, the first heat dissipation region contacts the high temperature region of the heating plate to dissipate heat for the high temperature region by heat conduction, and the second heat dissipation region does not contact the low temperature region of the heating plate to dissipate heat for the low temperature region by heat radiation.

[0009] Furthermore, in some embodiments of the present invention, the first heat dissipation region has a larger first roughness to improve the heat dissipation efficiency of the high temperature area of ​​the heating plate, while the second heat dissipation region has a smaller second roughness to reduce the heat dissipation efficiency of the low temperature area of ​​the heating plate.

[0010] Furthermore, in some embodiments of the present invention, a plurality of bosses and / or recessed holes are provided in the first heat dissipation region, and the bosses and / or recessed holes are used to increase the first roughness of the first heat dissipation region.

[0011] Further, in some embodiments of the present invention, the high temperature area is located at the center of the heating plate. The low temperature area is located at the outer edge of the heating plate. The plurality of bosses and / or recessed holes are arranged uniformly or unevenly in the first heat dissipation area located at the center of the heat dissipation plate along the circumference of the heat dissipation plate.

[0012] Furthermore, in some embodiments of the present invention, the plurality of bosses and / or recessed holes are evenly divided into a plurality of concentric circles along the radial direction of the heat sink. The first bosses and / or first recessed holes located in the center circle of the first heat dissipation region along the radial direction have a larger first distribution density to improve the heat dissipation efficiency of the corresponding area of ​​the heating plate, while the second bosses and / or second recessed holes located in the edge circle of the first heat dissipation region along the radial direction have a smaller second distribution density to reduce the heat dissipation efficiency of the corresponding area of ​​the heating plate.

[0013] Further, in some embodiments of the present invention, the handle of the heating plate passes through the center of the heat sink and connects to the lifting base. The two low-temperature areas are respectively located at the center and outer edge of the heating plate. The high-temperature area is located at the sub-center of the heating plate. At least one of the second heat dissipation areas is aligned with the outer edge of the heating plate. At least one of the first heat dissipation areas is aligned with the sub-center of the heating plate.

[0014] Furthermore, in some embodiments of the present invention, another second heat dissipation area is aligned with the center of the heating plate. And / or the diameter of the heat dissipation plate is larger than the diameter of the wafer carried on the heating plate, and the second heat dissipation area aligned with the outer edge of the wafer is located at the secondary outer edge of the heat dissipation plate. Another first heat dissipation area is also provided at the outermost edge of the heat dissipation plate.

[0015] Further, in some embodiments of the present invention, each of the first heat dissipation regions has the same or different heights along the circumference according to the temperature distribution of the high temperature region along the circumference. And / or each of the first heat dissipation regions has the same or different heights according to the temperature of the corresponding high temperature region. And / or each of the second heat dissipation regions has the same or different heights along the circumference according to the temperature distribution of the low temperature region along the circumference. And / or each of the second heat dissipation regions has the same or different heights according to the temperature of the corresponding low temperature region.

[0016] Further, in some embodiments of the present invention, the first heat dissipation region is composed of a plurality of heat dissipation sub-regions. The heat dissipation sub-regions have the same or different heights according to the temperature of the corresponding high-temperature sub-region, the heat dissipation sub-region aligned with the high-temperature sub-region with a higher temperature has a larger third height, and the heat dissipation sub-region aligned with the low-temperature sub-region with a lower temperature has a smaller fourth height.

[0017] Furthermore, in some embodiments of the present invention, the first heat dissipation region is composed of a plurality of heat dissipation sub-regions. The heat dissipation sub-regions have the same or different materials according to the temperature of the corresponding high-temperature sub-region, and the heat dissipation sub-regions with higher temperatures are selected from the first material with greater thermal conductivity, while the heat dissipation sub-regions with lower temperatures are selected from the second material with lower thermal conductivity.

[0018] Furthermore, in some embodiments of the present invention, the material of each heat dissipation sub-area is selected from at least one of Al2O3, AlN, SiC, and Hastelloy.

[0019] Furthermore, in some embodiments of the present invention, the plurality of heat dissipation regions are made of different materials. The first heat dissipation region is made of a third material with a larger thermal conductivity, while the second heat dissipation region is made of a fourth material with a smaller thermal conductivity. The material of the first heat dissipation region and / or the second heat dissipation region is selected from at least one of Al2O3, AlN, SiC, and Hastelloy.

[0020] Furthermore, in some embodiments of the present invention, the support member includes a support plate and a support sleeve. Both the support plate and the support sleeve are made of heat-conducting materials. The support plate is thermally connected to and supports the side of the heat sink facing away from the heating plate. The support sleeve surrounds the handle of the heating plate, and its first end is connected to the lifting base, while its second end is thermally connected to the support plate, so that the heat sink is driven to rise and fall synchronously with the heating plate through the support plate, and the heat sink is thermally connected to an external cold source.

[0021] In addition, the process chamber provided according to the second aspect of the present invention comprises a heating plate and a heat dissipation system as provided in the first aspect of the present invention. The heating plate is used to carry and heat the wafer to be processed. The heat dissipation system is used to perform differentiated heat dissipation in different zones according to the temperature distribution on the surface of the heating plate.

[0022] In addition, the semiconductor processing equipment provided according to the third aspect of the present invention includes at least one chamber, wherein the chamber is provided with a heating plate for carrying and heating the wafer, and a heat dissipation system as provided in the first aspect of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0024] Figure 1 A schematic structural diagram of a process chamber provided according to some embodiments of the present invention is shown.

[0025] Figure 2 A schematic diagram showing temperature regions of a heating plate provided according to some embodiments of the present invention.

[0026] Figure 3A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown.

[0027] Figure 4 A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown.

[0028] Figure 5 A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown.

[0029] Figure 6 A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown.

[0030] Figure 7 A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown.

[0031] Figure 8 A schematic structural diagram of a process chamber provided according to some embodiments of the present invention is shown.

[0032] Fig. 9 A temperature distribution diagram of the surface of a heating plate provided according to some embodiments of the present invention is shown.

[0033] Fig.10 A temperature distribution diagram of the surface of a heating plate provided according to some embodiments of the present invention is shown. DETAILED DESCRIPTION

[0034] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0035] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0037] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0038] As mentioned above, with the development of process requirements, the requirements for wafer temperature uniformity are getting higher and higher. Therefore, there are higher requirements for the temperature uniformity of the surface of the heating plate assembly. However, in the actual production and research and development process, it is relatively difficult to optimize the structure of the heating plate itself, and there are disadvantages such as high research and development costs and long cycles. In addition, the method of dissipating heat from the heating plate only by setting up a liquid cooling device has the disadvantages of uneven heat dissipation, high cost, and complex process, and it is impossible to design heat dissipation according to the heat dissipation requirements of different areas of the heating plate.

[0039] In order to overcome the above-mentioned defects of the prior art, the present invention provides a heat dissipation system, a process chamber and a semiconductor processing equipment. A heat dissipation control plate is arranged under the heating disk, and heat dissipation areas with different efficiencies are differentially designed according to the temperature distribution of the heating disk. The system is used to meet the heat dissipation requirements of different areas of the heating disk without changing the structure of the heating disk, thereby improving the temperature uniformity of the surface of the heating disk.

[0040] In some non-limiting embodiments, the semiconductor processing equipment provided in the third aspect of the present invention includes at least one chamber. Here, the chamber includes but is not limited to a load lock chamber (Lock Load, LL) with a wafer preheating function, a transfer chamber (Transfer Module, TM) and / or a process chamber (Processing Module, PM) with a wafer heating function. The chamber is equipped with a heating plate that carries and heats the wafer, and a heat dissipation system as provided in the first aspect of the present invention.

[0041] In addition, the heat dissipation system provided in the first aspect of the present invention may be configured and implemented in the process chamber provided in the second aspect of the present invention.

[0042] Please refer to the reference for details Figure 1 to Figure 4 . Figure 1 A schematic structural diagram of a process chamber provided according to some embodiments of the present invention is shown. Figure 2 A schematic diagram showing temperature regions of a heating plate provided according to some embodiments of the present invention. Figure 3 A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown. Figure 4 A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown.

[0043] exist Figure 1 In the illustrated embodiment, the process chamber provided by the second aspect of the present invention includes a heating plate 20 and a heat dissipation system. Here, the heating plate 20 is used to carry and heat the wafer to be processed. The heat dissipation system is used to perform differentiated heat dissipation on the heating plate 20 according to the temperature distribution on the surface of the heating plate 20.

[0044] like Figure 2 to Figure 4 As shown, the heat dissipation system provided by the first aspect of the present invention includes a heat dissipation plate 11 and a support member 12. Here, the distance between the heat dissipation plate 11 and the heating disk 20 ranges from 0.3mm to 3mm, the diameter ranges from 200mm to 380mm, and the thickness ranges from 5mm to 100mm. The heat dissipation plate 11 is provided with a heat dissipation surface on the side of the heating disk 20 that carries the wafer. The heat dissipation surface is divided into a plurality of heat dissipation areas, a first heat dissipation area 111 with a higher first heat dissipation efficiency is aligned with the high temperature area 21 of the heating disk 20, and a second heat dissipation area 112 with a lower second heat dissipation efficiency is aligned with the low temperature area 22 of the heating disk 20. Here, the outer diameter range of the second heat dissipation area 112 is 300 to 360mm, and the inner diameter range is 180 to 300mm. The first end of the support member 12 is connected to the heat dissipation plate 11, and the second end thereof is connected to the lifting base 23 of the heating disk 20, so as to drive the heat dissipation plate 11 to rise and fall synchronously with the heating disk 20.

[0045] Further, in some preferred embodiments, the above-mentioned multiple heat dissipation areas have different heights. Here, the first heat dissipation area 111 has a larger first height to maintain a smaller first heat dissipation spacing with the high temperature area 21 of the heating plate 20. The second heat dissipation area 112 has a smaller second height to maintain a larger second heat dissipation spacing with the low temperature area 22 of the heating plate 20. Here, the difference between the first heat dissipation spacing and the second heat dissipation spacing ranges from 0.1mm to 100mm. In this way, the heat dissipation system can improve the heat dissipation efficiency of the high temperature area 21 of the heating plate 20 by reducing the heat conduction path between the first heat dissipation area 111 and the high temperature area 21 of the heating plate 20, and reduce the heat dissipation efficiency of the low temperature area 22 of the heating plate 20 by increasing the heat conduction path between the second heat dissipation area 112 and the low temperature area 22 of the heating plate 20, thereby improving the temperature uniformity of the surface of the heating plate 20.

[0046] In addition, in some preferred embodiments, the above-mentioned multiple heat dissipation areas are made of different materials. Here, the first heat dissipation area 111 uses a third material with a larger thermal conductivity, and the second heat dissipation area 112 uses a fourth material with a smaller thermal conductivity. The material of the first heat dissipation area 111 and / or the second heat dissipation area 112 is selected from at least one of Al2O3, AlN, SiC, and Hastelloy. In this way, the heat dissipation system can increase the thermal conductivity of the first heat dissipation area 111 to improve the heat dissipation efficiency of the high temperature area 21 of the heating plate 20, and reduce the thermal conductivity of the second heat dissipation area 112 to reduce the heat dissipation efficiency of the low temperature area 22 of the heating plate 20, thereby further improving the temperature uniformity of the surface of the heating plate 20.

[0047] Those skilled in the art will appreciate that the above-mentioned embodiments of setting multiple heat dissipation areas of different heights and different materials are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concepts of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit the scope of protection of the present invention.

[0048] Optionally, those skilled in the art may also provide a plurality of heat dissipation areas with the same height and different materials to reduce the difficulty of processing the heat dissipation plate 11 .

[0049] In addition, in some embodiments, the first heat dissipation region 111 contacts the high temperature region 21 of the heating plate 20 to dissipate heat from the high temperature region 21 by heat conduction, thereby improving the heat transfer efficiency to the high temperature region 21 of the heating plate 20. The second heat dissipation region 112 does not contact the low temperature region 22 of the heating plate 20 to dissipate heat from the low temperature region 22 by heat radiation, thereby reducing the heat transfer efficiency to the low temperature region 22 of the heating plate 20.

[0050] Alternatively, in some embodiments, the first heat dissipation region 111 and the second heat dissipation region 112 do not contact the heating plate 20 , but dissipate heat with different efficiencies to the high temperature region 21 and the low temperature region 22 through heat radiation at different intervals.

[0051] Furthermore, in some preferred embodiments, the first heat dissipation region 111 has a larger first roughness to improve the heat dissipation efficiency of the high temperature region 21 of the heating plate 20, and the second heat dissipation region 112 has a smaller second roughness to reduce the heat dissipation efficiency of the low temperature region of the heating plate 20, thereby further improving the temperature uniformity of the surface of the heating plate 20. Here, the roughness range of the first roughness is 4 to 5, and the second roughness can be optionally 0.2.

[0052] In addition, Figure 3 and Figure 4In the illustrated embodiment, a plurality of bosses and / or recesses are provided in the first heat dissipation region 111. Here, the bosses and / or recesses are used to increase the first roughness of the first heat dissipation region 111 and improve the heat transfer efficiency of the heat radiation to the high temperature region 21 of the heating disk 20, so as to further increase the heat dissipation efficiency of the high temperature region 21 of the heating disk 20. In addition, for the embodiment in which a boss is provided in the first heat dissipation region 111, the first heat dissipation spacing between the first heat dissipation region 111 and the high temperature region 21 of the heating disk 20 refers to the distance from the boss surface to the heating disk 20. Here, the boss has a diameter range of 0.5 mm to 5 mm and a height range of 0.1 to 2 mm. The recess can be a complete through hole with an aperture range of 1 mm to 11 mm and a number range of 50 to 3000.

[0053] Please refer to Figure 2 to Figure 5 . Figure 5 A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown.

[0054] like Figure 2 to Figure 4 As shown, the high temperature area 21 is located at the center of the heating plate 20, and the low temperature area 22 is located at the outer edge of the heating plate 20. A plurality of bosses and / or recesses are evenly or unevenly arranged in the first heat dissipation area 111 located at the center of the heat dissipation plate 11 along the circumference of the heat dissipation plate 11.

[0055] In addition, Figure 5 In the illustrated embodiment, the plurality of bosses and / or recesses are evenly divided into a plurality of concentric circles along the radial direction of the heat sink 11. Here, the first bosses and / or first recesses located in the center circle of the first heat dissipation region 111 along the radial direction have a larger first distribution density to improve the heat dissipation efficiency of the corresponding area of ​​the heating disk 20, while the second bosses and / or second recesses located in the edge circle of the first heat dissipation region 111 along the radial direction have a smaller second distribution density to reduce the heat dissipation efficiency of the corresponding area of ​​the heating disk 20. In this way, the heat dissipation system can control the corresponding positions of the first heat dissipation region 111 to have different heat dissipation efficiencies according to the different temperature distributions at different positions of the heating disk 20, thereby making the temperature of the heating disk 20 evenly distributed.

[0056] For example, a plurality of concave holes are arranged circumferentially on the first heat dissipation area 111 aligned with the secondary center of the heating plate 20, with a hole diameter of 3.5 mm and a hole number of 500. The concave holes are evenly divided into 9 concentric circles along the radial direction of the heat dissipation plate 11. In the area with a radius range of 60 to 70 mm, the distribution density of the concave holes is 50 equal divisions / circle, in the area with a radius range of 90-100 mm, the distribution density of the concave holes is 80 equal divisions / circle, and in the area with a radius range of 70 to 90 mm and the area with a radius range of 100 to 120 mm, the distribution density of the concave holes is 60 equal divisions / circle.

[0057] Those skilled in the art will understand that Figure 5 The embodiments shown in which multiple bosses and / or recessed holes are evenly divided into multiple concentric circles along the radial direction of the heat sink 11 are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit the scope of protection of the present invention.

[0058] Optionally, those skilled in the art may also arrange the plurality of bosses and / or recessed holes in an uneven arrangement based on the above concept to reduce the difficulty of processing the heat dissipation plate 11 .

[0059] Please continue to refer to Figure 1 to Figure 5 The handle of the heating plate 20 passes through the center of the heat dissipation plate 11 and connects to the lifting base 23. The two low-temperature areas 22 are respectively located at the center and the outer edge of the heating plate, and the high-temperature area 21 is located at the sub-center of the heating plate. At least one second heat dissipation area 112 is aligned with the outer edge of the heating plate 20, and at least one first heat dissipation area 111 is aligned with the sub-center of the heating plate 20.

[0060] In addition, in some embodiments, another second heat dissipation area 112 is aligned with the center of the heating disk 20. The diameter of the heat sink 11 is larger than the diameter of the wafer carried on the heating disk 20, and the second heat dissipation area 112 aligned with the outer edge of the wafer is located at the secondary outer edge of the heat sink 11. Here, the outer diameter range of the second heat dissipation range 112 aligned with the center of the heating disk 20 is 90 to 179 mm, and the inner diameter range is 60 to 120 mm. In addition, the diameter of the heat sink 11 is equal to the diameter of the heating disk 20, and the outermost edge of the heat sink 11 is also provided with another first heat dissipation area 111 aligned with the outer edge of the heating disk 20. Here, the first heat dissipation area 111 is kept at a distance of about 1 mm from the heating disk to prevent plasma from entering the back of the heating disk 20 through the gap to react and generate deposits, thereby contaminating the wafer to be processed.

[0061] Further, each first heat dissipation region has the same or different heights along the circumferential direction according to the temperature distribution of the high temperature region 21 along the circumferential direction. Alternatively, each first heat dissipation region has the same or different heights according to the temperature of the corresponding high temperature region. Similarly, each second heat dissipation region has the same or different heights along the circumferential direction according to the temperature distribution of the low temperature region along the circumferential direction. Alternatively, each second heat dissipation region has the same or different heights according to the temperature of the corresponding low temperature region.

[0062] For example, in Figure 3In the illustrated embodiment, the heat sink 11 has a diameter of 363 mm and a thickness of 22 mm. Two first heat sink areas 111 and two second heat sink areas 112 are provided on the heat sink 11. Here, the outer diameter of the second heat sink area 112 aligned with the center of the heating disk 20 is 120 mm, and the inner diameter is 82 mm. The height difference between the first heat sink area 111 aligned with the sub-center of the heating disk 20 and the second heat sink area 112 is 2 mm. The outer diameter of the second heat sink area 112 aligned with the outer edge of the heating disk 20 is 330 mm, and the inner diameter is 240 mm, and the height difference between it and the first heat sink area 111 is also 2 mm. The first heat sink area 111 located at the edge of the heat sink 11 is provided with cylindrical bosses arranged in a circumferential direction, with a diameter of 2 mm and a height of 0.13 mm.

[0063] Please refer to further Figure 6 and Figure 7 . Figure 6 A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown. Figure 7 A schematic structural diagram of a heat sink provided according to some embodiments of the present invention is shown.

[0064] exist Figure 6 and Figure 7 In the illustrated embodiment, the first heat dissipation region 111 is composed of a plurality of heat dissipation sub-regions, and each heat dissipation sub-region can be optionally divided into fan-shaped structural parts at an angle. Here, the heat dissipation sub-regions have the same or different heights according to the temperature of the corresponding high-temperature sub-region, and the heat dissipation sub-region aligned with the high-temperature sub-region with a higher temperature has a larger third height, while the heat dissipation sub-region aligned with the low-temperature sub-region with a lower temperature has a smaller fourth height.

[0065] For example, the first heat dissipation area 11 on the heat dissipation plate 11 may be equally divided into sector-shaped structural parts at an angle of 20°, and the height difference between the third height and the fourth height is 1 mm.

[0066] In addition, in some preferred embodiments, the heat dissipation sub-regions have the same or different materials according to the temperature of the corresponding high temperature sub-region, and the heat dissipation sub-region with a higher temperature is selected from a first material with a larger thermal conductivity, while the heat dissipation sub-region with a lower temperature is selected from a second material with a smaller thermal conductivity. Here, the material of each heat dissipation sub-region can be selected from at least one of Al2O3, AlN, SiC, and Hastelloy.

[0067] Please refer to Figure 8 . Figure 8 A schematic structural diagram of a process chamber provided according to some embodiments of the present invention is shown.

[0068] In addition, Figure 8In the illustrated embodiment, the support member 12 includes a support plate 121 and a support sleeve 122. Here, the support plate 121 and the support sleeve are both made of heat-conducting materials. The support plate is heat-conductingly connected to and supports the side of the heat sink facing away from the heating plate. The support sleeve surrounds the handle of the heating plate, and its first end is connected to the lifting base, while its second end is heat-conductingly connected to the support plate, so that the heat sink is driven to rise and fall synchronously with the heating plate via the support plate, and the heat sink is heat-conductingly connected to an external cold source (for example: a water cooling module or an air cooling module). In this way, the heat dissipation system provided by the first aspect of the present invention can reuse the support member 12 to export heat, so as to achieve a compact design of the heat dissipation control system.

[0069] In addition, in some embodiments, the heat dissipation system may further include a heat conducting device from the handle of the heating plate 20, the inside of the support member 12, or the outside of the support member 12 to conduct heat from the heat dissipation control plate.

[0070] Please refer to Fig. 9 and Fig.10 . Fig. 9 A temperature distribution diagram of the surface of a heating plate provided according to some embodiments of the present invention is shown. Fig.10 A temperature distribution diagram of the surface of a heating plate provided according to some embodiments of the present invention is shown.

[0071] like Fig. 9 As shown in FIG. 1 , in a process chamber without a heat dissipation system, the average surface temperature of the heating plate is 586.8°C, and the difference between the highest and lowest temperatures is 21°C. Fig.10 As shown, in the process chamber provided with the heat dissipation system provided by the first aspect of the present invention, the average temperature of the surface of the heating disk is 588.2°C, and the difference between the highest temperature and the lowest temperature is 12.7°C. In this way, the heat dissipation system provided by the first aspect of the present invention can improve the temperature uniformity of the surface of the heating disk without affecting the thin film deposition process.

[0072] In summary, the above-mentioned heat dissipation system, process chamber and semiconductor processing equipment provided by the present invention can all be configured by setting a heat dissipation plate 11 under the heating disk 20 and differentially designing heat dissipation areas with different efficiencies according to the temperature distribution of the heating disk 20, so as to meet the heat dissipation requirements of different areas of the heating disk 20 without changing the structure of the heating disk 20, thereby improving the temperature uniformity on the surface of the heating disk 20.

[0073] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0074] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A heat dissipation system, characterized in that: include: A heat dissipation plate, wherein a heat dissipation surface is provided on a side facing the heating plate carrying the wafer, wherein the heat dissipation surface is divided into a plurality of heat dissipation regions, a first heat dissipation region with a higher first heat dissipation efficiency is aligned with a high temperature region of the heating plate, and a second heat dissipation region with a lower second heat dissipation efficiency is aligned with a low temperature region of the heating plate; as well as A support member has a first end connected to the heat sink and a second end connected to a lifting base of the heating plate, so as to drive the heat sink to be lifted and lowered synchronously with the heating plate.

2. The heat dissipation system according to claim 1, characterized in that: The multiple heat dissipation areas have different heights, wherein the first heat dissipation area has a larger first height to maintain a smaller first heat dissipation distance with the high temperature area of ​​the heating plate, and the second heat dissipation area has a smaller second height to maintain a larger second heat dissipation distance with the low temperature area of ​​the heating plate.

3. The heat dissipation system according to claim 2, characterized in that: The first heat dissipation area contacts the high temperature area of ​​the heating plate to dissipate heat for the high temperature area by heat conduction. The second heat dissipation area does not contact the low-temperature area of ​​the heating plate, so as to dissipate heat for the low-temperature area by heat radiation.

4. The heat dissipation system according to claim 3, characterized in that: The first heat dissipation region has a larger first roughness to improve the heat dissipation efficiency of the high temperature region of the heating plate, while the second heat dissipation region has a smaller second roughness to reduce the heat dissipation efficiency of the low temperature region of the heating plate.

5. The heat dissipation system according to claim 4, characterized in that: A plurality of bosses and / or recessed holes are provided in the first heat dissipation region, wherein the bosses and / or the recessed holes are used to increase a first roughness of the first heat dissipation region.

6. The heat dissipation system according to claim 5, characterized in that: The high temperature area is located at the center of the heating plate, the low temperature area is located at the outer edge of the heating plate, and the multiple bosses and / or recessed holes are evenly or unevenly arranged along the circumference of the heat sink in a first heat sink area located at the center of the heat sink.

7. The heat dissipation system according to claim 6, characterized in that: The multiple bosses and / or recessed holes are evenly divided into multiple concentric circles along the radial direction of the heat dissipation plate, wherein the first bosses and / or first recessed holes located in the center circle along the radial direction of the first heat dissipation area have a larger first distribution density to improve the heat dissipation efficiency of the corresponding area of ​​the heating plate, while the second bosses and / or second recessed holes located in the edge circle along the radial direction of the first heat dissipation area have a smaller second distribution density to reduce the heat dissipation efficiency of the corresponding area of ​​the heating plate.

8. The heat dissipation system according to claim 6, characterized in that: The handle of the heating plate passes through the center of the heat sink and is connected to the lifting base. The two low-temperature areas are respectively located at the center and the outer edge of the heating plate, and the high-temperature area is located at the secondary center of the heating plate. At least one of the second heat dissipation areas is aligned with the outer edge of the heating plate, and at least one of the first heat dissipation areas is aligned with the secondary center of the heating plate.

9. The heat dissipation system according to claim 8, characterized in that: Another second heat dissipation area is aligned with the center of the heating plate, and / or The diameter of the heat sink is larger than the diameter of the wafer carried on the heating plate, the second heat sink area aligned with the outer edge of the wafer is located at the secondary outer edge of the heat sink, and another first heat sink area is also provided at the outermost edge of the heat sink.

10. The heat dissipation system according to claim 9, characterized in that: Each of the first heat dissipation regions has the same or different heights along the circumferential direction according to the temperature distribution of the high temperature region along the circumferential direction, and / or The first heat dissipation regions have the same or different heights according to the temperature of the corresponding high temperature region, and / or Each of the second heat dissipation regions has the same or different heights along the circumference according to the temperature distribution of the low temperature region along the circumference, and / or The second heat dissipation regions have the same or different heights according to the temperature of the corresponding low-temperature region.

11. The heat dissipation system according to claim 6, characterized in that: The first heat dissipation area is composed of a plurality of heat dissipation sub-areas, wherein the heat dissipation sub-areas have the same or different heights according to the temperature of the corresponding high-temperature sub-areas, the heat dissipation sub-area aligned with the high-temperature sub-area with a higher temperature has a larger third height, and the heat dissipation sub-area aligned with the low-temperature sub-area with a lower temperature has a smaller fourth height.

12. The heat dissipation system according to claim 6 or 11, characterized in that: The first heat dissipation area is composed of multiple heat dissipation sub-areas, wherein the heat dissipation sub-areas have the same or different materials according to the temperature of the corresponding high-temperature sub-area, and the heat dissipation sub-area aimed at the high-temperature sub-area with a higher temperature is selected from a first material with a larger thermal conductivity, while the heat dissipation sub-area aimed at the low-temperature sub-area with a lower temperature is selected from a second material with a smaller thermal conductivity.

13. The heat dissipation system according to claim 12, characterized in that: The material of each heat dissipation sub-area is selected from at least one of Al2O3, AlN, SiC, and Hastelloy.

14. The heat dissipation system according to claim 1 or 2, characterized in that: The multiple heat dissipation areas are made of different materials, wherein the first heat dissipation area is made of a third material with greater thermal conductivity, and the second heat dissipation area is made of a fourth material with less thermal conductivity, wherein the material of the first heat dissipation area and / or the second heat dissipation area is selected from at least one of Al2O3, AlN, SiC, and Hastelloy.

15. The heat dissipation system according to claim 1, characterized in that: The support member includes a support plate and a support sleeve, wherein the support plate and the support sleeve are both made of heat-conducting materials, the support plate is thermally connected to and supports the side of the heat sink facing away from the heating plate, the support sleeve surrounds the handle of the heating plate, a first end of which is connected to the lifting base, and a second end of which is thermally connected to the support plate, so that the heat sink is driven to rise and fall synchronously with the heating plate via the support plate, and the heat sink is thermally connected to an external cold source.

16. A process chamber, characterized in that: include: A heating plate, used to carry and heat the wafer to be processed; as well as The heat dissipation system according to any one of claims 1 to 15 is used to perform differentiated heat dissipation in different zones according to the temperature distribution on the surface of the heating plate.

17. A semiconductor processing equipment, characterized in that: The semiconductor processing equipment comprises at least one chamber, wherein a heating plate for carrying and heating a wafer and a heat dissipation system as claimed in any one of claims 1 to 15 are arranged in the chamber.

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