Frequency sources, chips, RF transceivers, systems and equipment for dual-frequency fusion multiplexing

Abstract

The present invention discloses a frequency source, chip, radio frequency transceiver, system and equipment for dual-frequency fusion multiplexing, which belongs to the technical field of wireless communication and radar system. The system includes: a full-function millimeter wave CMOS 4+1 phased array chip, connected to the antenna end, used to realize signal processing and frequency conversion between millimeter wave signals and C-band intermediate frequency signals, phase control and gain adjustment of millimeter wave signals, and provide internal frequency source and calibration functions; C-band front end, connected to the antenna end, used to receive or transmit C-band signals; C-band / intermediate frequency transceiver multiplexing chip, which is used to perform frequency conversion between C-band or intermediate frequency signals and baseband signals in a multiplexing manner, and perform signal processing and gain control on C-band intermediate frequency signals; dual-frequency fusion multiplexing frequency source, used to provide local oscillator signals; all-digital control logic circuit, used to provide control instructions. The present invention improves the efficiency and performance of dual-frequency joint communication.

Description

Technical Field

[0001] The present invention relates to the field of wireless communication and radar systems, and in particular to a frequency source, chip, radio frequency transceiver, system and equipment for dual-frequency fusion multiplexing. Background Art

[0002] With the rapid development of Internet technology, wireless communication plays an increasingly important role in modern society. Traditional wireless communication technology has made great progress, but there are still some limitations in achieving high-speed, low-latency and large-bandwidth communications. In order to meet the needs of 5G communication technology, C-band 5G chip technology has made significant progress and has gradually been put into large-scale commercial use. Although the C-band has good coverage performance, due to limited bandwidth, data capacity and transmission rate are still subject to certain constraints. In this context, millimeter wave communication has attracted much attention due to its advantages such as large bandwidth, low latency and high rate, and has become a key technical means to achieve high-speed communication. However, millimeter wave communication faces huge challenges such as large transmission attenuation and limited coverage distance. In order to overcome the problems of millimeter waves, phased array systems have emerged, which can achieve precise phase control and beamforming, reduce interference and improve signal-to-noise ratio, thereby optimizing communication quality. At present, the C-band RF front-end system and millimeter wave phased array system for 5G communication work independently, which limits the flexible allocation of transceiver channel resources in the two communication frequency bands, has limited functions and low integration. Therefore, how to achieve efficient collaboration between C-band and millimeter wave is the biggest challenge for the practical application of 5G.

[0003] Traditional phased array systems usually consist of multiple RF channels, each of which includes components such as amplifiers, phase shifters, attenuators, and input / output switches. However, traditional systems have some limitations, such as the variable gain module and amplifier module are usually designed separately and lack integrated calibration channels and frequency sources. These factors limit the system's integration, overall performance, and flexibility. In contrast, a higher level of integration is achieved by integrating the independent components of the system into a multiplexing design. This design approach can not only reduce the cost and power consumption of the system, but also improve the performance and stability of the system, and can better adapt to different communication needs and application scenarios, reducing costs.

[0004] In general, the existing technical solutions still have the following problems: 1) The phased array system is not integrated enough. The traditional phased array system lacks the full functional integration of calibration channels, frequency sources and mixers. The inconsistency of amplitude and phase characteristics between the channels of the phased array system will have a great impact on the gain and sidelobe level of the phased array antenna, deteriorate the communication quality, and limit the system's automatic adjustment and optimization capabilities. 2) The RF front-end system architecture lacks resource reuse and functional independence. In the prior art, the 5G millimeter wave phased array system and the C-band system are designed and operated independently, lacking effective circuit reuse and functional integration. The integration is low, the function is single, and the dual-frequency fusion design is complex. This has led to limitations on the overall performance of the system, increased architecture costs, and limited the commercial application of the system. Summary of the invention

[0005] In order to solve at least one of the technical problems existing in the prior art to a certain extent, the purpose of the present invention is to provide a frequency source, chip, radio frequency transceiver, system and equipment for dual-frequency fusion multiplexing.

[0006] The first technical solution adopted by the present invention is:

[0007] A dual-frequency fusion multiplexing frequency source comprises a phase-locked loop, a first frequency multiplier, a second frequency multiplier, a frequency divider, a first single-pole double-throw switch and a second single-pole double-throw switch;

[0008] The signal output end of the phase-locked loop is connected to the first active end of the first single-pole double-throw switch and to the input end of the first frequency multiplier, the fixed end of the first single-pole double-throw switch is connected to the input end of the second frequency multiplier, and the output end of the first frequency multiplier and the output end of the second frequency multiplier respectively output millimeter-wave local oscillator signals;

[0009] The phase-locked loop is multiplexed and connected in series with the frequency divider; the output end of the frequency divider is connected to the first active end of the second single-pole double-throw switch, and the fixed end of the second single-pole double-throw switch outputs the C-band local oscillator signal;

[0010] The phase-locked loop, the first frequency multiplier, the second frequency multiplier and the first single-pole double-throw switch form a millimeter wave frequency source; the phase-locked loop is multiplexed to form a C-band frequency source with the frequency divider and the second single-pole double-throw switch to achieve the function of outputting a millimeter wave local oscillator signal and a C-band dual-frequency local oscillator signal.

[0011] Further, the operating frequency of the phase-locked loop is between the C-band and the millimeter wave band;

[0012] The second active end of the first single-pole double-throw switch is connected to the external millimeter-wave signal source, and the switching with the external millimeter-wave signal source input is realized through the first single-pole double-throw switch;

[0013] The second active end of the second single-pole double-throw switch is connected to the external C-band signal source, and the switching between the phase-locked loop and the external C-band signal source is achieved through the second single-pole double-throw switch.

[0014] The second technical solution adopted by the present invention is:

[0015] A full-function millimeter-wave CMOS 4+1 phased array chip, including:

[0016] Millimeter wave mixers, including millimeter wave up-mixers and millimeter wave down-mixers; each mixer has three ports: a radio frequency end, an intermediate frequency end, and a local oscillator end;

[0017] A combiner, an output end of which is connected to the radio frequency end of the millimeter wave down-mixer;

[0018] A splitter, an input end of which is connected to the radio frequency end of the millimeter wave up-mixer;

[0019] A phased array front end, comprising a plurality of first-class radio frequency channels; the first-class radio frequency channels include a receiving channel and a transmitting channel, and each channel includes an antenna end and a common end; the common end of the receiving channel is connected to the combining end of the combiner, and the common end of the transmitting channel is connected to the splitting end of the splitter;

[0020] A calibration channel, comprising a second type of radio frequency channel, a calibration single-pole double-throw switch, a calibration antenna terminal, a calibration signal terminal and a calibration local oscillator terminal; the calibration antenna terminal is coupled and connected to the antenna terminal of the first type of radio frequency channel;

[0021] A dual-frequency fusion multiplexing frequency source as described above, wherein the output end of the first frequency multiplier is connected to the calibration local oscillator end, and the output end of the second frequency multiplier is connected to the local oscillator end of the millimeter wave mixer.

[0022] Furthermore, the antenna end of the first type of radio frequency channel is used to connect to a millimeter wave phased array antenna;

[0023] The receiving channel of the first type of radio frequency channel includes a millimeter wave variable gain low noise amplifier and a receiving phase shifter in sequence from the antenna end to the common end;

[0024] The transmitting channel of the first type of radio frequency channel includes a millimeter wave variable gain power amplifier and a transmitting phase shifter in sequence from the antenna end to the common end.

[0025] Further, the second type of radio frequency channel of the calibration channel includes a calibration receiving channel and a calibration transmitting channel;

[0026] The calibration receiving channel includes a low noise amplifier and a calibration down mixer, and the calibration transmitting channel includes a power amplifier and a calibration up mixer; the calibration down mixer and the calibration up mixer both include a radio frequency end, an intermediate frequency end and a local oscillator end, and the local oscillator end serves as a calibration signal end, and the intermediate frequency end serves as a calibration signal end;

[0027] The output end of the power amplifier is connected to the first active end of the calibration single-pole double-throw switch, the input end of the low-noise amplifier is connected to the second active end of the calibration single-pole double-throw switch, and the fixed end of the calibration single-pole double-throw switch serves as the calibration antenna end; the calibration antenna end is coupled and connected to the antenna ends of the receiving channel and the transmitting channel of each first-class radio frequency channel of the phased array front end to achieve amplitude and phase calibration between multiple channels; the calibration signal end inputs / outputs the calibration signal through a balun.

[0028] Furthermore, the output end of the first frequency multiplier of the millimeter wave frequency source is connected to the local oscillator end of the calibration up-mixer and the calibration down-mixer; the output end of the second frequency multiplier of the millimeter wave frequency source is connected to the local oscillator end of the millimeter wave down-mixer, and is simultaneously input to the orthogonal signal generator to generate multiple orthogonal local oscillator signals connected to the local oscillator end of the millimeter wave up-mixer;

[0029] The intermediate frequency signal is connected to the intermediate frequency end of the millimeter wave up-mixer through the multiple orthogonal intermediate frequency signals output by the orthogonal signal generator. The millimeter wave up-mixer mixes the multiple orthogonal local oscillator signals with the multiple orthogonal intermediate frequency signals to output an upper sideband millimeter wave signal to suppress the image interference signal of the lower sideband.

[0030] Furthermore, the phased array front end is used to receive / transmit millimeter wave signals and control the amplitude and phase of the millimeter wave signals; the phased array front end includes four radio frequency channels, any of which includes a receiving channel and a transmitting channel, and is respectively connected to the millimeter wave phased array antenna; the receiving channel includes a millimeter wave variable gain low noise amplifier and a receiving phase shifter, which are used to amplify the received signal and reduce noise, and have the function of adjusting the amplitude and phase of the received signal; the transmitting channel includes a millimeter wave variable gain power amplifier and a transmitting phase shifter to enhance the power of the signal, which is used to increase the transmitting power so as to effectively transmit it to the target, and has the function of adjusting the amplitude and phase of the transmitting signal;

[0031] A calibration channel, used to calibrate the amplitude and phase of each transceiver channel in the phased array front end, so that the amplitude and phase of each transceiver channel are highly consistent, thereby improving system performance and signal quality;

[0032] A millimeter wave frequency source, used for providing a millimeter wave local oscillator signal;

[0033] The mixer is used to mix the received / transmitted signal using the millimeter wave local oscillator signal to obtain a mixed signal.

[0034] Furthermore, the receiving channels of the four RF channels are output to the millimeter wave down-mixer through a combiner, and the millimeter wave up-mixer output signal is input to a splitter, and four signals are output through the splitter and connected to the transmitting channels of the four RF channels respectively.

[0035] Further, the calibration channel includes a calibration low noise amplifier, a calibration power amplifier, a calibration down mixer and a calibration up mixer;

[0036] Among them, the calibration low noise amplifier input end and the calibration power amplifier output end are connected through a calibration single-pole double-throw switch, and the calibration single-pole double-throw switch has a switching selection function for calibrating a receiving channel and a transmitting channel; the fixed end of the calibration single-pole double-throw switch is coupled with each receiving channel input end and transmitting channel output end of the four channels of the phased array front end to achieve amplitude and phase calibration between the four channels.

[0037] Furthermore, the millimeter wave frequency source is composed of a phase-locked loop, a first frequency multiplier, a second frequency multiplier and a first single-pole double-throw switch, wherein the first single-pole double-throw switch is used to select and switch the use of an internal frequency source and an external frequency source; the millimeter wave frequency source provides a calibration local oscillator signal for calibration up-mixing and calibration down-mixing through the first frequency multiplier, and the millimeter wave frequency source provides a local oscillator signal for the millimeter wave down-mixer through the second frequency multiplier, and the local oscillator signal generates four orthogonal local oscillator signals through an orthogonal signal generator to provide an orthogonal local oscillator signal for the millimeter wave up-mixer.

[0038] Furthermore, the intermediate frequency signal is output through an orthogonal signal generator to form four orthogonal intermediate frequency signals and the orthogonal local oscillator signal, which are mixed by the millimeter wave up-mixer to output an upper sideband millimeter wave signal, thereby suppressing the image interference signal of the lower sideband.

[0039] Furthermore, the full-function millimeter wave CMOS 4+1 phased array chip can expand the number of channels, such as 8 channels, 16 channels or 32 channels.

[0040] The third technical solution adopted by the present invention is:

[0041] A C-band / intermediate frequency transceiver multiplexing chip, comprising:

[0042] C-band / IF transceiver channel, including C-band / IF receiving channel and C-band / IF transmitting channel;

[0043] Transceiver single-pole double-throw switch, including a receiving single-pole double-throw switch and a transmitting single-pole double-throw switch;

[0044] A dual-frequency fusion multiplexing frequency source as described above, wherein the C-band frequency source output end, i.e., the fixed end of the second single-pole double-throw switch, is connected to the local oscillator end of the C-band / intermediate frequency transceiver channel;

[0045] The intermediate frequency end of the C-band / intermediate frequency transceiver channel is connected to the fixed end of the transceiver single-pole double-throw switch;

[0046] By controlling the connection relationship between the fixed end and the active end of the transceiver single-pole double-throw switch, the C-band / intermediate frequency transceiver multiplexing chip is reused to achieve the selection and switching of different signal paths.

[0047] Further, the C-band / intermediate frequency receiving channel comprises a C-band / intermediate frequency variable gain low noise amplifier and a C-band / intermediate frequency down mixer connected in series in sequence; the C-band / intermediate frequency transmitting channel comprises a C-band / intermediate frequency up mixer and a C-band / intermediate frequency variable gain power amplifier connected in series in sequence;

[0048] The C-band / intermediate frequency variable gain low noise amplifier is connected to the fixed end of the receiving single-pole double-throw switch, and the C-band / intermediate frequency variable gain power amplifier is connected to the fixed end of the transmitting single-pole double-throw switch;

[0049] By controlling the connection relationship between the fixed end and the active end of the transceiver single-pole double-throw switch, the C-band / intermediate frequency transceiver multiplexing chip is reused to achieve the gating and switching of different signal paths.

[0050] The fourth technical solution adopted by the present invention is:

[0051] A dual-frequency fusion radio frequency transceiver, comprising:

[0052] A fully functional mmWave CMOS 4+1 phased array chip as described above;

[0053] A C-band / intermediate frequency transceiver multiplexing chip as described above is called a first C-band / intermediate frequency transceiver multiplexing chip;

[0054] a C-band front end, including a power amplifier and a low noise amplifier, referred to as a first C-band front end;

[0055] The intermediate frequency end of the full-function millimeter wave CMOS 4+1 phased array chip is connected to the first active end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip, and the signal end of the first C-band front end is connected to the second active end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip;

[0056] The switching between the intermediate frequency signal path and the C-band signal path is achieved by controlling the connection relationship between the fixed end and the active end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip.

[0057] Further, the fixed end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip is controlled to be connected to the first active end, and the first active end is connected in series with the balun and the intermediate frequency end of the full-function millimeter wave CMOS 4+1 phased array chip to achieve the connection between the first C-band / intermediate frequency transceiver multiplexing chip and the full-function millimeter wave CMOS 4+1 phased array chip, and is disconnected from the first C-band front end, thereby forming a millimeter wave phased array transceiver;

[0058] The fixed end of the transceiver single-pole double-throw switch controlling the first C-band / intermediate frequency transceiver multiplexing chip is connected to the second active end, the first C-band / intermediate frequency transceiver multiplexing chip is multiplexed to be connected to the first C-band front end, and is disconnected from the full-function millimeter wave CMOS 4+1 phased array chip to realize the first C-band transceiver.

[0059] The fifth technical solution adopted by the present invention is:

[0060] A full-function dual-band fusion radio frequency transceiver system, comprising:

[0061] A dual-band fusion radio frequency transceiver as described above;

[0062] A C-band / intermediate frequency transceiver multiplexing chip as described above is called a second C-band / intermediate frequency transceiver multiplexing chip;

[0063] a C-band front end, including a power amplifier and a low noise amplifier, referred to as a second C-band front end;

[0064] Fully digital control logic circuit;

[0065] The second C-band front-end signal terminal is connected to one active terminal of the transceiver single-pole double-throw switch of the second C-band / intermediate frequency transceiver multiplexing chip, and the other active terminal is left floating, so as to realize the second C-band transceiver;

[0066] The full-function dual-band fusion RF transceiver system has three working modes: the concurrent working mode of the millimeter-wave phased array transceiver and the C-band transceiver; the C-band / intermediate frequency transceiver multiplexing chip supports the independent working mode of the full-function millimeter-wave CMOS 4+1 phased array chip; and the multiplexed C-band / intermediate frequency transceiver multiplexing chip realizes the coordinated working mode of two C-band transceivers.

[0067] Furthermore, control instructions are sent through a fully digital control logic circuit to control the connection relationship between the fixed end and the active end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip, that is, the connection relationship between the first C-band / intermediate frequency transceiver multiplexing chip and the full-function millimeter-wave CMOS4+1 phased array chip and the first C-band front end, thereby realizing the working switching of the millimeter-wave transceiver and the first C-band transceiver.

[0068] Furthermore, for the millimeter-wave phased array transceiver and C-band transceiver fusion concurrent working mode, the all-digital control logic circuit provides control instructions to the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip, so that the fixed end is connected to the first active end, and the dual-frequency fusion RF transceiver and the second C-band transceiver are controlled to work simultaneously, and the first C-band front end is controlled to stop working, so as to finally realize the millimeter-wave phased array transceiver and C-band transceiver fusion concurrent working mode.

[0069] Furthermore, for the C-band / intermediate frequency transceiver multiplexing chip that supports the full-function millimeter wave CMOS 4+1 phased array chip independent working mode, the all-digital control logic circuit provides a control instruction to the second C-band transceiver to stop the operation of the C-band transceiver, and at the same time provides a control instruction to the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip to connect the fixed end with the first active end, so as to realize the first C-band / intermediate frequency transceiver multiplexing chip as an intermediate frequency module to support the millimeter wave phased array transceiver independent working mode.

[0070] Furthermore, for the multiplexed C-band / intermediate frequency transceiver multiplexing chip to realize the collaborative working mode of two C-band transceivers, the all-digital control logic circuit provides control instructions to the full-function millimeter wave CMOS 4+1 phased array chip to stop the operation of the full-function millimeter wave CMOS 4+1 phased array chip, and at the same time controls the first C-band transceiver and the second C-band transceiver to work together, thereby forming an independent working mode of a two-input / two-output C-band transceiver to achieve doubling of the transmission rate.

[0071] Furthermore, the full-function dual-band fusion RF transceiver system also includes an ESD protection circuit, which is electrically connected to the full-function millimeter-wave CMOS 4+1 phased array chip, C-band front end and C-band / intermediate frequency transceiver multiplexing chip to prevent or reduce damage to electronic equipment and circuits caused by electrostatic discharge.

[0072] Furthermore, the millimeter wave phased array transceiver and C-band transceiver in the full-function dual-frequency fusion RF transceiver system can expand channels to form communication equipment for transmitting more data streams.

[0073] The sixth technical solution adopted by the present invention is:

[0074] A communication device, comprising the frequency source of dual-frequency fusion multiplexing as described above; or, comprising the full-function millimeter wave CMOS 4+1 phased array chip as described above; or, comprising the C-band / intermediate frequency transceiver multiplexing chip as described above; or, comprising the dual-frequency fusion RF transceiver as described above; or, comprising a full-function dual-frequency fusion RF transceiver system architecture as described above and its multiple operating modes.

[0075] Compared with the prior art, the beneficial effects of the present invention include:

[0076] (1) The present invention introduces the frequency synthesis technology of dual-frequency fusion, and solves the problem of large frequency difference output between millimeter wave and C band through frequency multiplication and division circuits. It realizes the reliable fusion and output of dual-frequency local oscillator signal sources with large frequency difference supporting millimeter wave (18-27GHz) and C band (2-3GHz). The phase-locked loop, the core component of the frequency source of dual-frequency fusion multiplexing, has a wide frequency range of 6-9GHz, phase noise <-117dBc / Hz@1MHz, and jitter of 400-500fs;

[0077] (2) The present invention proposes a full-function millimeter wave CMOS 4+1 phased array chip, which integrates a calibration channel, a millimeter wave frequency source, has a large bandwidth characteristic, and is compatible with C-band fusion communication. It solves the problem of inconsistent amplitude and phase characteristics of each channel due to the lack of a calibration channel in the traditional phased array system, and overcomes the technical difficulties of integrating a dual-frequency fusion frequency source circuit, thereby significantly improving the communication quality. The working bandwidth of the full-function millimeter wave CMOS 4+1 phased array chip can cover 24.25~29.5GHz, covering multiple frequency bands of 5G millimeter wave communication, including n258 (24.25~27.5GHz), n257 (26.5~29.5GHz), and n261 (27.5~28.35GHz). The error vector magnitude (EVM) under the conditions of 64QAM and 600MHz symbol rate is <7%. In addition, the chip has high-performance and high-precision phase shifting performance, which can effectively improve the sidelobe suppression capability of the phased array, thereby improving the system performance. The phase shifter has a phase shift accuracy of 5.625°, a phase shift range of 360°, an RMS phase error of less than 3.5°, and an RMS gain error of less than 1dB;

[0078] (4) The present invention integrates transceivers of the C-band and millimeter-wave frequency bands and supports multiple working modes. It not only has the long-distance transmission capability of the C-band communication system, but also has the advantages of large bandwidth, low latency and high speed of millimeter-wave communication. It solves the problems of insufficient resource reuse and functional independence of the RF front-end system architecture. It supports the optimal dual-frequency joint communication mode, and the system can be flexibly deployed in different working modes, thereby improving the efficiency and performance of dual-frequency joint communication. Among them, the bandwidth of the C-band / intermediate frequency transceiver multiplexing chip is 3.3~3.85GHz, covering the n78 (3.3-3.6GHz) frequency band of 5G mobile communications, the noise figure is 6.3dB, and it has a saturated output power of 10dBm and a transceiver variable gain range of 32dB.

[0079] (5) The dual-frequency fusion transceiver system and communication equipment of the present invention have high integration and strong scalability. The full-function millimeter wave CMOS 4+1 phased array chip is not limited to 4 channels, but can be further expanded to more channels. For C-band transceivers, the number of channels can also be expanded to achieve more data stream transmission and higher communication rates.

[0080] These technical features and advantages make the present invention have important applications and commercial value in the fields of millimeter wave and C-band communications, and bring innovation and breakthroughs to the development of communication equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0081] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the embodiments of the present invention or the drawings of related technical solutions in the prior art are introduced below. It should be understood that the drawings introduced below are only for the convenience of clearly describing some embodiments of the technical solutions of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0082] Figure 1 This is a system block diagram of a full-function dual-frequency fusion radio frequency transceiver system and a communication device in Embodiment 1 of the present invention;

[0083] Figure 2 is a circuit diagram of a millimeter wave CMOS 4+1 phased array chip in an embodiment of the present invention;

[0084] Figure 3 This is a circuit diagram of a C-band / intermediate frequency transceiver multiplexing chip in an embodiment of the present invention;

[0085] Figure 4 is a C-band front-end circuit diagram in an embodiment of the present invention;

[0086] Figure 5 is a schematic diagram of a concurrent working mode of a C-band transceiver and a millimeter-wave phased array transceiver in an embodiment of the present invention;

[0087] Figure 6 It is a schematic diagram of the C-band / intermediate frequency transceiver multiplexing chip supporting the independent working mode of the full-function millimeter wave CMOS4+1 phased array chip in an embodiment of the present invention;

[0088] Figure 7 It is a schematic diagram of a multiplexing C-band / intermediate frequency transceiver multiplexing chip to realize a collaborative working mode of two C-band transceivers in an embodiment of the present invention.

[0089] Figure 8 It is a system block diagram of a full-function dual-frequency fusion radio frequency transceiver system and a communication device in Embodiment 2 of the present invention;

[0090] Fig. 9This is a system block diagram of a full-function dual-frequency fusion radio frequency transceiver system and a communication device in Embodiment 3 of the present invention;

[0091] Fig.10 It is a system block diagram of a full-function dual-frequency fusion radio frequency transceiver system and communication equipment in Example 4 of the present invention. DETAILED DESCRIPTION

[0092] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and are not to be construed as limitations of the present invention. For the step numbers in the following embodiments, they are only provided for the convenience of explanation, and the order between the steps is not limited in any way, and the execution order of each step in the embodiment can be adaptively adjusted according to the understanding of those skilled in the art.

[0093] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0094] In the description of the present invention, the meaning of "several" is one or more, the meaning of "more" is two or more, and the meanings of "greater than", "less than", "exceed" and the like are understood as not including the number itself, and the meanings of "above", "below", "within" and the like are understood as including the number itself. If there is a description of the first and the second, it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features. In addition, "and / or" describes the association relationship of the associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. The character " / " generally indicates that the related objects before and after are in an "or" relationship.

[0095] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0096] In response to the existing technical problems, this embodiment proposes a full-function dual-frequency fusion RF transceiver system and communication equipment architecture, including a full-function millimeter-wave CMOS 4+1 phased array chip with highly integrated frequency source and calibration channel, a C-band / intermediate frequency transceiver multiplexing chip, and a C-band RF front end, aiming to solve the insufficient integration of the phased array system. Traditional phased array systems lack a series of problems such as the full-function integration of calibration channels, frequency sources, and mixers, insufficient resource multiplexing of the RF front-end system architecture, and functional independence. The following is a detailed explanation of the full-function dual-frequency fusion RF transceiver system and communication equipment in conjunction with the accompanying drawings.

[0097] Embodiment 1:

[0098] (1) Circuit structure description

[0099] like Figure 1 As shown, this embodiment provides a full-function dual-band fusion RF transceiver system, which mainly includes a millimeter-wave CMOS 4+1 phased array chip, a C-band / intermediate frequency transceiver multiplexing chip and a C-band front end.

[0100] The millimeter wave CMOS 4+1 phased array chip integrates four millimeter wave receiving channels (including a millimeter wave variable gain low noise amplifier 101 and a millimeter wave receiving phase shifter 102), four millimeter wave transmitting channels (including a millimeter wave variable gain power amplifier 103 and a millimeter wave transmitting phase shifter 104), a combiner 105, a power divider 106, a millimeter wave down mixer 107, a millimeter wave orthogonal up mixer 108, orthogonal signal generators 109 and 110, a transceiver calibration channel, a millimeter wave frequency source composed of a phase-locked loop 119, a first frequency multiplier 118 and a second frequency multiplier 121, a fully digital control unit and an ESD protection circuit, such as Figure 2 shown.

[0101] The C-band / IF transceiver multiplexing chip mainly includes a receiving single-pole double-throw switch 122 (1), a transmitting single-pole double-throw switch 122 (2), a second single-pole double-throw switch 127, a C-band / IF variable low noise amplifier 123, a C-band / IF variable gain power amplifier 125, a C-band / IF down-mixer 124, a C-band / IF up-mixer 126, and a C-band frequency source composed of a phase-locked loop 119 and a frequency divider 128, as shown in FIG. Figure 3 shown.

[0102] The C-band front end mainly includes a C-band power amplifier 129, a C-band low noise amplifier 130 and a C-band front end switch 131. Figure 4 shown.

[0103] The specific circuit structure is connected as follows: the receiving input end of the millimeter wave variable gain low noise amplifier 101 in each millimeter wave receiving channel is connected to the millimeter wave phased array antenna end to receive the millimeter wave frequency signal RF1, and the receiving output end of the millimeter wave variable gain low noise amplifier 101 is connected to the input end of the receiving phase shifter 102. The output ends of the receiving phase shifters 102 of the four receiving channels are respectively connected to the corresponding combining ports on the combiner 105. The output end of the combiner 105 is connected to the signal input end of the millimeter wave down mixer 107, and the local oscillator input end of the millimeter wave down mixer 107 is connected to the output end LO of the second frequency multiplier 121 in the millimeter wave frequency source. 1 The millimeter wave down mixer 107 outputs a first intermediate frequency C-band signal IF 1 Each millimeter wave transmission channel first converts the first intermediate frequency C-band signal IF 1 An input terminal of an intermediate frequency quadrature signal generator 109 is input, and an output terminal of the intermediate frequency quadrature signal generator 109 is connected to a signal input terminal of a millimeter wave quadrature up-mixer 108. A local oscillator input terminal of the millimeter wave quadrature up-mixer 108 is connected to an output terminal of a quadrature signal generator 110.

[0104] The input terminal of the orthogonal signal generator 110 is connected to the output terminal LO of the second frequency multiplier 121 in the millimeter wave frequency source. 1 The output end of the orthogonal mixer 109 is connected to the input end of the power divider 106. The four RF transmission channel transmission phase shifters 104 are respectively connected to the corresponding branch ports on the power divider. The transmission phase shifter 104 of the RF transmission channel is connected to the input end of the power amplifier 103 of the transmission channel. The transmission output port of the high power amplifier 103 in each millimeter wave receiving channel is connected to the millimeter wave phased array antenna to transmit the millimeter wave frequency signal RF1.

[0105] The millimeter wave frequency source is composed of a phase-locked loop 119, a first frequency multiplier 118, a second frequency multiplier 121 and a first single-pole double-throw switch 120. The input end of the phase-locked loop 119 is connected to the reference clock signal, and the output is connected to port 1 of the first single-pole double-throw switch 120 and the input end of the first frequency multiplier 118 respectively. The calibration local oscillator signal LO at the output end of the first frequency multiplier 118 1C It is connected to the local oscillator end of the calibration channel up-mixer 116 and down-mixer 115. Port 2 of the first single-pole double-throw switch 120 is connected to the millimeter-wave off-chip frequency source, and port 3 of the first single-pole double-throw switch 120 is connected to the input of the second frequency multiplier 121.

[0106] The calibration channel is composed of a calibration variable gain low noise amplifier 113, a calibration variable gain power amplifier 114, a calibration down mixer 115, a calibration up mixer 116 and an antenna end calibration single-pole double-throw switch 117. For the transmission channel of the calibration channel, a calibration signal is input to the calibration up mixer 116, and the local oscillator end of the calibration up mixer 116 is connected to the calibration local oscillator signal LO at the output end of the first frequency multiplier 118 in the millimeter wave frequency source. 1C The calibration up-mixer output terminal 116 is connected to the calibration variable gain power amplifier 114 input terminal, and the calibration power amplifier output terminal is connected to port 1 of the calibration single-pole double-throw switch 117. For the receiving channel of the calibration channel, the input terminal of the calibration variable gain low noise amplifier 113 is connected to port 2 of the calibration single-pole double-throw switch 117, and the output terminal of the calibration variable gain low noise amplifier 113 is connected to the input terminal of the calibration down-mixer 115. The output terminal of the calibration down-mixer 115 outputs a calibration signal. The calibration channel is coupled and connected to the output terminals of the power amplifiers 103 of the four transmitting channels and the input terminals of the millimeter-wave variable gain low noise amplifiers 101 of the four receiving channels at port 3 of the calibration single-pole double-throw switch 117.

[0107] The differential first intermediate frequency signal IF1 output by the millimeter wave down-mixer 107 of the millimeter wave CMOS 4+1 phased array chip is connected to the differential input end of the balun 112 for the receiving path of the C-band / intermediate frequency transceiver multiplexing chip (1), and the single-ended output end of the balun 112 is connected to the port 1 of the single-pole double-throw switch 122 (1) in the C-band / intermediate frequency transceiver multiplexing chip (1). The port 2 of the single-pole double-throw switch 122 (1) in the C-band / intermediate frequency transceiver multiplexing chip (1) is connected to the output end of the C-band low noise amplifier 130 of the C-band front end (1). The port 3 of the single-pole double-throw switch 122 (1) receiving the C-band / intermediate frequency transceiver multiplexing chip (1) is connected to the input end of the C-band / intermediate frequency variable low noise amplifier 123 of the C-band / intermediate frequency transceiver multiplexing chip (1). The output end of the C-band / IF variable low noise amplifier 123 is connected to the input end of the C-band / IF down mixer 124. The local oscillator end of the C-band / IF down mixer 124 is connected to the port 3 of the second single-pole double-throw switch 127, and finally the first IF signal IF1 is converted into the second IF signal IF2.

[0108] For the transmission path of the C-band / IF transceiver multiplexing chip (1), the second IF signal IF2 is connected to the input end of the C-band / IF up-mixer 126, the local oscillator end of the C-band / IF up-mixer 126 is connected to the port 3 of the second single-pole double-throw switch 127, and the ports 1 and 2 of the second single-pole double-throw switch are respectively connected to the internal frequency source LO C and external frequency source LO 2The output end of the C-band / IF up-mixer 126 is connected to the input end of the C-band / IF variable gain power amplifier 125, and the output of the C-band / IF variable gain power amplifier 125 is connected to the port 3 of the transmitting single-pole double-throw switch 122 (2) of the C-band / IF transceiver multiplexing chip (1). The port 1 of the single-pole double-throw switch 122 (2) in the C-band / IF transceiver multiplexing chip (1) is connected to the single-ended input end of the balun 111, and the differential output end of the balun 111 outputs the differential first IF signal IF1 and is connected to the input end of the orthogonal signal generator 109. The port 2 of the single-pole double-throw switch 122 (2) in the C-band / IF transceiver multiplexing chip (1) is connected to the input end of the C-band power amplifier 129 of the C-band front end (1). Port 1 of the C-band front-end switch 131 of the C-band front-end (1) is connected to the input of the C-band low noise amplifier 130, and port 2 of the C-band front-end switch 131 of the C-band front-end (1) is connected to the output of the C-band power amplifier 129. Port 3 of the C-band front-end switch 131 is connected to the C-band antenna to transmit or receive the C-band radio frequency signal RF2. The local oscillator inputs of the C-band / intermediate frequency down-mixer 124 and the up-mixer 126 in the C-band / intermediate frequency transceiver multiplexing chip (1) are connected.

[0109] Port 2 of the single-pole double-throw switch 122 (1) and port 2 of the single-pole double-throw switch 122 (2) of the C-band / intermediate frequency transceiver multiplexing chip (2) are respectively connected to the output port of the C-band low noise amplifier 130 and the input end of the C-band power amplifier 129 of the C-band front end (2), and port 1 of the single-pole double-throw switch 122 (1) and port 1 of the single-pole double-throw switch 122 (2) of the C-band / intermediate frequency transceiver multiplexing chip (2) are suspended. The circuit connection structure of the C-band front end (2) is the same as that of the C-band front end (1). The internal connection of the C-band / intermediate frequency transceiver multiplexing chip (2) is the same as that of the C-band / intermediate frequency transceiver multiplexing chip (1).

[0110] (2) Circuit working principle description

[0111] The working principle of the circuit is mainly divided into the following three parts for explanation: the working principle of the millimeter wave CMOS 4+1 phased array chip; the working principle of the C-band / intermediate frequency transceiver multiplexing chip and the C-band RF front-end; the working principle of the dual-band fusion RF transceiver system.

[0112] 1) Working principle of millimeter wave CMOS 4+1 phased array chip

[0113] The structure of the millimeter wave CMOS 4+1 phased array chip is as follows Figure 2As shown. The chip is a full-featured transceiver chip with built-in calibration channels and internal frequency sources, designed for transmitting and receiving millimeter-wave frequency wireless signals. By integrating the calibration channel, the amplitude and phase calibration of the millimeter-wave phased array front end is realized, thereby improving the system performance and signal quality. At the same time, the integration of the internal frequency source provides the chip with a stable local oscillator signal, further enhancing its application reliability in the field of millimeter-wave communications. The millimeter-wave CMOS 4+1 phased array chip can control the amplitude and phase of each channel to achieve the amplitude and phase control of each antenna unit, and realize the dynamic control of the beam shape of the transmitted or received signal. For the receiver, receiving channels 1 to 4 receive millimeter-wave frequency RF1 signals through phased array antennas, and realize noise suppression and cancellation through the low-noise amplifier 101 of the receiving channel, perform signal amplification and noise suppression, and realize the change and control of the gain of the receiving channel at the same time, and then perform 360° high-precision phase control through the broadband millimeter-wave receiving phase shifter 102. The signals received by the four receiving channels are power synthesized by the combiner 105, and finally the millimeter wave frequency signal RF1 is mixed with the local oscillator signal LO1 by the millimeter wave down mixer 107 to realize the frequency conversion of the millimeter wave frequency RF1 signal to the first intermediate frequency IF1 signal. The local oscillator signal LO1 of the millimeter wave down mixer 107 is provided by the millimeter wave frequency source. For the transmitter, the millimeter wave CMOS 4+1 phased array chip can receive the first intermediate frequency IF1 signal, and the input signal generates four orthogonal intermediate frequency signals as the orthogonal intermediate frequency input signals of the millimeter wave orthogonal up mixer 108 through the orthogonal signal generator 109. The local oscillator signal LO output by the millimeter wave frequency source 1 The orthogonal signal generator 110 generates four-way orthogonal local oscillator signals LO 1 The millimeter wave orthogonal up-mixer 108 uses the orthogonal intermediate frequency input signal and the orthogonal local oscillator signal LO as the orthogonal local oscillator input signal of the millimeter wave orthogonal up-mixer 108. 1 The mixing can output the millimeter wave frequency signal, and then the four balanced power output signals are input into the four transmission channels respectively through the splitter. The input signals of transmission channels 1 to 4 are firstly subjected to 360° high-precision phase control by the broadband millimeter wave transmission phase shifter 104. Then the signal is amplified with high quality and high power by the millimeter wave variable gain power amplifier 103. Finally, the millimeter wave frequency signal RF1 is transmitted through the millimeter wave phased antenna.

[0114] The calibration channel of the millimeter-wave CMOS 4+1 phased array chip is a simple transceiver. Its main function is to calibrate the amplitude and phase of each transceiver channel in the phased array system, so that the amplitude and phase of each transceiver channel are highly consistent. It is mainly through the coupling of the 3 ports of the calibration single-pole double-throw switch 117 with the input of the low-noise amplifier 101 of the four receiving channels and the output of the power amplifier 103 of the transmitting channel, so as to realize the connection between the calibration channel and the phased array transceiver path and monitor the phased array system. The working principle is as follows:

[0115] Receive calibration: First, take receive channel 1 as the reference, and mix the calibration signal with the calibration local oscillator signal LO provided by the millimeter wave frequency source through the calibration up-mixer 116. 1C Mixing is performed to generate a reference signal with the same frequency as the millimeter wave frequency RF1 signal. The signal power is then amplified by the calibration variable gain power amplifier 114, and port 1 of the calibration single-pole double-throw switch 117 is connected to port 3 of the calibration single-pole double-throw switch 117. At this time, the calibration channel receiving path is not working. The transmission signal of port 3 of the calibration single-pole double-throw switch 117 is coupled to the receiving channel 1, and the reference amplitude and phase signal is obtained through the receiving channel 1. Then, the relative phase and amplitude of each remaining receiving channel and the reference channel are detected in turn. Finally, the calibration parameters of the amplitude and phase of each receiving channel are obtained, and the amplitude and phase of each receiving channel are adjusted by controlling the fully digital control logic circuit to achieve internal calibration of receiving channels 1 to 4.

[0116] Transmit calibration: First, take transmit channel 1 as the reference, and couple the transmit signal of transmit channel 1 to port 3 of the calibration single-pole double-throw switch 117 through the output end of the millimeter-wave variable gain power amplifier 103 in transmit channel 1. The calibration single-pole double-throw switch 117 connects the received signal to port 2 of the calibration single-pole double-throw switch 117 through switch control, that is, inputs the receiving path in the calibration channel, and the transmit path does not work. The noise coefficient is reduced, the signal is amplified, and the gain is adjusted through the calibration variable gain low noise amplifier 113. Subsequently, the calibration down-mixer 115 combines the millimeter-wave frequency RF1 signal with the calibration local oscillator signal LO provided by the millimeter-wave frequency source. 1CMixing is performed to generate a reference signal with the same frequency as the first intermediate frequency signal. Then, the relative phase and amplitude of each remaining transmission channel and the reference channel are detected in turn. Finally, the calibration parameters of the amplitude and phase of each transmission channel are obtained, and the amplitude and phase of each transmission channel are adjusted by controlling the full digital control logic circuit to achieve the transmission calibration of transmission channel 1 to transmission channel 4. The advantage of this calibration is that the calibration is implemented inside the chip, the implementation is simple, and the design is easy to implement. It can provide the amplitude and phase calibration data of all system errors between each receiving and transmitting channel to the antenna unit, but the calibration data does not include the antenna unit manufacturing tolerance, installation error and mutual coupling caused by the amplitude and phase inconsistency between the antenna array units. The manufacturing tolerance, processing accuracy and installation tolerance of the antenna array must be strictly controlled, or the calibration values ​​of its amplitude and phase must be obtained through secondary calibration.

[0117] The frequency source of the millimeter wave CMOS 4+1 phased array chip mainly provides the local oscillator LO for the millimeter wave down mixer 107. 1 The signal is input to the orthogonal signal generator to provide the orthogonal local oscillator signal orthogonal LO for the millimeter wave orthogonal up-mixer 108. 1 , providing a calibration local oscillator signal LO for the calibration down-mixer 115 and calibration up-mixer 116 of the calibration channel 1C . The frequency source input signal is divided into two modes: internal frequency source and external frequency source output. The internal and external frequency sources are switched mainly through the first single-pole double-throw switch 120. The internal frequency source is the external input reference clock that is frequency-locked and phase-locked by the phase-locked loop 119 to generate the desired clock signal. When the switch is switched to the internal frequency source, that is, port 1 and port 3 of the first single-pole double-throw switch 120 are connected, the clock signal generated by the phase-locked loop 119 is used as the input signal of the first frequency multiplier 118 and the second frequency multiplier 121; when the switch is switched to the external frequency source, that is, port 2 and port 3 of the first single-pole double-throw switch 120 are connected, the clock signal generated by the external signal source is used as the input signal of the second frequency multiplier 121, and finally the clock signal generated by the phase-locked loop 119 and the millimeter-wave off-chip frequency source input is frequency-multiplied to generate the local oscillator signal required by the millimeter-wave mixer and the calibration mixer. The system flexibly selects internal and external frequency sources in different working modes to meet specific application requirements.

[0118] All controls of the phase control, amplitude change, switching of single-pole double-throw switches, etc. of the millimeter-wave CMOS 4+1 phased array chip are controlled by a fully digital control logic circuit. The millimeter-wave CMOS 4+1 phased array chip contains an ESD protection circuit, which is a circuit design used to prevent or reduce the damage of electrostatic discharge to electronic components and circuits and improve circuit robustness. Electrostatic discharge is a sudden discharge caused by an imbalance of charge, which may cause damage to electronic components and integrated circuits. The working principle of the ESD protection circuit is mainly to protect sensitive electronic components by guiding, absorbing or dispersing the energy of electrostatic discharge.

[0119] 2) Working principle of C-band / IF transceiver multiplexing chip and C-band RF front end

[0120] The structure of C-band / IF transceiver multiplexing chip is as follows: Figure 3 As shown. The chip is a C-band and intermediate frequency transceiver multiplexing chip, which can be used as a C-band transceiver alone, and can also be multiplexed as an intermediate frequency module of a millimeter wave phased array transceiver to achieve conversion between baseband and C-band frequencies. For the receiving path of the C-band / intermediate frequency transceiver multiplexing chip, the C-band front end and millimeter wave phased array front end signal channels are selected and switched through the receiving single-pole double-throw switch 122 (1), and the output signal is amplified and noise suppressed by the C-band / intermediate frequency variable low noise amplifier 123, and has a variable gain function. Finally, the frequency of the C-band / intermediate frequency signal is changed to the baseband signal through the C-band / intermediate frequency down mixer 124. For the transmitting path of the C-band / intermediate frequency transceiver multiplexing chip, the C-band / intermediate frequency down mixer 126 realizes the conversion of the baseband signal to the C-band / intermediate frequency signal, and the input signal is power amplified through the C-band / intermediate frequency variable gain power amplifier 125, and has a gain adjustment function. Finally, the C-band front-end and millimeter-wave phased array front-end signal channels are selected and switched through the transmitting single-pole double-throw switch 122 (2). The C-band / intermediate frequency transceiver multiplexing chip multiplexing phase-locked loop 119 integrates the C-band frequency source.

[0121] The C-band frequency source output signal is divided into two modes: internal frequency source and external frequency source output, which are mainly switched by the second single-pole double-throw switch 127. The internal frequency source generates a clock signal after the external reference clock is frequency-locked and phase-locked by the phase-locked loop 119. The clock signal is divided by the divider 128 to provide the required local oscillator signal (LO) for the C-band / IF down-mixer 124 and the C-band / IF up-mixer 126. C ). When the internal frequency source is switched, that is, port 1 and port 3 of the second single-pole double-throw switch 127 are connected, the clock signal generated by the phase-locked loop 119 becomes the input signal of the frequency divider 118. When the external frequency source is switched, that is, port 2 and port 3 of the second single-pole double-throw switch 127 are connected, and finally the phase-locked loop 119 generates the LOC and the input LO from an off-chip C-band frequency source 2 , a channel is selected by a second single-pole double-throw switch 127 to provide a local oscillator signal for the local oscillator input of the C-band / IF down-mixer 124 and the up-mixer 126. The system flexibly selects internal and external frequency sources in different working modes to meet specific application requirements.

[0122] C-band RF front end Figure 4 As shown, the main work is to transmit and receive C-band frequency wireless signals. A high-performance C-band low noise amplifier 130 and a C-band power amplifier 129 with a C-band front-end switch 131 are integrated and connected to a C-band / intermediate frequency transceiver multiplexing chip, thereby improving the C-band communication performance and signal quality. The RF2 signal end transmits or receives signals through a C-band array antenna and is connected to port 3 of the C-band front-end switch. The C-band transmission or receiving channel is flexibly selected through the C-band front-end switch. Port 1 or port 2 of the C-band front-end switch is respectively connected to the input end of the C-band low noise amplifier 130 and the output end of the C-band power amplifier. When port 1 and port 3 of the C-band front-end switch are connected, that is, working in the receiving channel, the C-band low noise amplifier 130 amplifies the received RF2 signal and suppresses the noise, providing a high-quality C-band signal input to port 1 of the receiving single-pole double-throw switch 122 (1) of the C-band / intermediate frequency transceiver multiplexing chip. When port 2 and port 3 of the C-band front-end switch are connected and work in the transmission channel, the C-band power amplifier amplifies the power of the signal output from port 1 of the transmission single-pole double-throw switch 122 (2) of the C-band / intermediate frequency transceiver multiplexing chip, and finally transmits the wireless signal through the C-band array antenna.

[0123] 3) Working principle of dual-frequency fusion RF transceiver system

[0124] 1) Concurrent working mode of millimeter wave phased array transceiver and C-band transceiver fusion; 2) C-band / intermediate frequency transceiver multiplexing chip supports independent working mode of full-function millimeter wave CMOS 4+1 phased array chip; 3) Multiplexing C-band / intermediate frequency transceiver multiplexing chip realizes the collaborative working mode of two C-band transceivers.

[0125] The first working mode is Figure 5 As shown. Figure 5In the embodiment, the receiving single-pole double-throw switch 122 (1) of the C-band / intermediate frequency transceiver multiplexing chip (1) and the port 1 and port 3 of the transmitting single-pole double-throw switch 122 (2) are connected. At this time, the C-band front end (1) is in a non-working state. The C-band / intermediate frequency transceiver multiplexing chip (1) serves as an intermediate frequency amplification and intermediate frequency conversion module of the millimeter wave CMOS 4+1 phased array chip, connecting the millimeter wave CMOS 4+1 phased array chip with the baseband, realizing the conversion between the intermediate frequency signal and the baseband signal and the adjustment of the signal strength, thereby forming a millimeter wave phased array transceiver. At the same time, the output end of the C-band low noise amplifier 130 of the C-band front end (2) and the input end of the C-band power amplifier 129 are respectively connected to the receiving single-pole double-throw switch 122 (1) and the transmitting single-pole double-throw switch 122 (2) of the C-band / intermediate frequency transceiver multiplexing chip (2) Port 2 is connected to form a second C-band transceiver. This working mode combines the functions of millimeter wave phased array transceiver and C-band transceiver. The millimeter wave phased array transceiver and C-band transceiver work simultaneously in the millimeter wave band and C-band band respectively, so that the C-band can achieve long-distance communication, while the millimeter wave band provides a new collaborative working mode with large bandwidth, high rate and low latency communication.

[0126] The second working mode is Figure 6 As shown. In this mode, the C-band / IF transceiver multiplexing chip supports the independent operation of the full-function millimeter-wave CMOS 4+1 phased array chip. Unlike the first working mode, the second mode no longer includes the C-band transceiver, but allows the millimeter-wave phased array transceiver to work independently in specific environments and situations. By turning off the C-band transceiver, the C-band / IF transceiver multiplexing chip (1) acts as a multiplexing module to support the intermediate frequency amplification and intermediate frequency conversion modules of the millimeter-wave CMOS 4+1 phased array chip. The millimeter-wave CMOS 4+1 phased array chip is connected to the baseband to realize the conversion between the intermediate frequency signal and the baseband signal and the adjustment of the signal strength, thereby realizing the processing of the wireless signal. This design is highly flexible, enabling the system to select an independent operation of the millimeter-wave phased array transceiver as needed to meet specific environmental or application requirements. In this case, the C-band / IF transceiver multiplexing chip acts as an important multiplexing module, effectively supporting the intermediate frequency processing and frequency conversion operations of the millimeter-wave phased array chip.

[0127] The third working mode is as follows Figure 7 As shown. By multiplexing the C-band / IF transceiver multiplexing chip, the independent working mode of the two-input / two-output C-band transceiver is realized. Figure 7In the embodiment, by switching the receiving single-pole double-throw switch and the transmitting single-pole double-throw switch of the C-band / intermediate frequency transceiver multiplexing chip (1), the receiving single-pole double-throw switch 122 (1) of the C-band / intermediate frequency transceiver multiplexing chip (1) and the transmitting single-pole double-throw switch 122 (2) are connected to each other, and the receiving single-pole double-throw switch 122 (1) and the transmitting single-pole double-throw switch 122 (2) are multiplexed into the C-band signal amplification and C-band frequency conversion module of the first C-band front end, forming a first C-band transceiver. The receiving single-pole double-throw switch 122 (1) and the transmitting single-pole double-throw switch 122 (2) of the C-band / intermediate frequency transceiver multiplexing chip (2) are connected to each other to form a second C-band transceiver. At the same time, the full-function millimeter wave CMOS 4+1 phased array chip is controlled to be in a stopped working state. Therefore, through the joint cooperation of the two C-band transceivers, a third working mode is formed, that is, the independent working mode of the two-input / two-output C-band transceiver.

[0128] Embodiment 2:

[0129] like Figure 8 As shown, on the basis of Example 1, the millimeter-wave variable gain low noise amplifier 101 in the receiving channel of the millimeter-wave CMOS 4+1 phased array chip adopts a low noise amplifier 101' connected in series with a variable attenuator 101" to achieve noise reduction signal amplification and variable gain, and the millimeter-wave variable gain power amplifier 103 adopts a power amplifier amplifier 103' connected in series with a variable attenuator 103" to achieve signal power amplification and gain adjustment. This implementation scheme can achieve the same functions as the full-function millimeter-wave phased array chip, transceiver system and communication equipment in Example 1. Similarly, the C-band / intermediate frequency variable low noise amplifier 123, C-band / intermediate frequency variable gain power amplifier 125 or the calibration variable gain low noise amplifier 113, calibration variable gain power amplifier 114 in Example 1 can achieve the same function by using amplifiers and variable attenuators in the same way.

[0130] Embodiment 3:

[0131] like Fig. 9 As shown, based on Example 1, the variable gain functions of the millimeter wave variable gain low noise amplifier 101 and the millimeter wave variable gain power amplifier 103 in the receiving channel of the millimeter wave CMOS 4+1 phased array chip are integrated with the millimeter wave receiving phase shifter 102 and the millimeter wave transmitting phase shifter 104, respectively, to realize the design of the millimeter wave variable gain receiving phase shifter 102' and the millimeter wave variable gain receiving phase shifter 104'. This implementation scheme can realize the same functions as the full-function millimeter wave phased array chip, transceiver system and communication equipment in Example 1.

[0132] Embodiment 4:

[0133] like Fig.10As shown, based on Example 1, the orthogonal signal generator 109 in the millimeter wave CMOS 4+1 phased array chip is reversely placed at the output end of the millimeter wave orthogonal up-mixer 108 to realize orthogonal phase shifting and power synthesis, and the lower sideband suppression function can also be realized. Similarly, based on Example 1, the orthogonal signal generator 110 is placed at the output end of the millimeter wave orthogonal up-mixer 108 to realize the lower sideband suppression function. This implementation scheme can realize the same functions as the full-function millimeter wave phased array chip, transceiver system and communication equipment in Example 1.

[0134] Embodiment 5:

[0135] On the basis of Example 1, the frequency source of dual-frequency fusion multiplexing can be implemented in other ways. For example, the frequency source of dual-frequency fusion multiplexing only includes a frequency multiplier, and the phase-locked loop frequency can be designed to be in the frequency band of the local oscillator required by the multiplexing C-band / intermediate frequency transceiver multiplexing chip, and the local oscillator signal required by the millimeter-wave CMOS 4+1 phased array chip can be realized through a suitable frequency multiplier. For another example, the frequency source of dual-frequency fusion multiplexing only includes a frequency divider, and the phase-locked loop frequency can be designed to be in the frequency band of the local oscillator required by the millimeter-wave CMOS 4+1 phased array chip, and the required local oscillator signal can be realized through a suitable frequency divider multiplexing the C-band / intermediate frequency transceiver multiplexing chip.

[0136] Embodiment 6:

[0137] On the basis of Example 1, the calibration channel can remove the calibration variable gain low noise amplifier 113 and the calibration variable gain power amplifier 114, and only the calibration down mixer 115 and the calibration up mixer 116 are connected to the port 2 and the port 1 of the calibration single-pole double-throw switch 117 at the antenna end, respectively. This implementation scheme can achieve the same functions as the full-function millimeter wave phased array chip, transceiver system and communication equipment in Example 1.

[0138] Embodiment 7:

[0139] Based on Example 1, the full-function millimeter wave CMOS 4+1 phased array chip is not limited to 4 channels, but can be expanded to more channels (8 channels, 16 channels or 32 channels). For C-band transceivers, the number of channels can also be expanded. This implementation scheme can realize more data stream transmission, higher communication rate dual-frequency fusion transceiver system and communication equipment.

[0140] In summary, the present invention has at least the following advantages over the prior art:

[0141] A new type of full-function dual-frequency fusion phased array system and communication equipment, which integrates the transceivers of the C-band and millimeter-wave frequency bands and supports multiple working modes. Functional reuse and multiple working modes are achieved through reasonable planning of signal frequency and design of switches.

[0142] (1) The millimeter wave phased array chip proposed in the present invention integrates four transceiver channels, a calibration channel and an internal frequency source, and has the full-function characteristics of high integration, internal chip calibration and flexible switching between internal and external sources, which enhances the performance and applicability of the system and has strong scalability.

[0143] (2) The frequency synthesis technology of dual-frequency fusion was introduced, and the large frequency difference output problem between millimeter wave and C band was solved through frequency multiplication and division circuits. The fusion and output of dual-frequency local oscillator signal sources were reliably supported.

[0144] (3) Multiplexing C-band / IF transceiver multiplexing chips in different modes. This multiplexing technology realizes multi-mode and multi-function while effectively reducing redundant circuits in the system, improving system efficiency and reducing costs.

[0145] (4) The new full-function dual-frequency fusion phased array system and communication equipment proposed in the present invention integrates C-band and millimeter wave transceivers, supports multiple operating modes, and realizes circuit reuse and multiple operating modes by rationally planning signal frequencies and designing switches. The system allocates resources in real time according to demand, supports the optimal dual-frequency joint communication mode, combines the advantages of long-distance transmission of C-band communication and millimeter wave communication, and improves communication efficiency and performance.

[0146] In the above description of this specification, the description with reference to the terms "one embodiment / example", "another embodiment / example" or "certain embodiments / examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0147] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

[0148] The above is a specific description of the preferred implementation of the present invention, but the present invention is not limited to the above embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention. These equivalent modifications or substitutions are all included in the scope defined by the claims of this application.

Claims

1. A frequency source for dual-frequency fusion multiplexing, characterized in that: It includes a phase-locked loop, a first frequency multiplier, a second frequency multiplier, a frequency divider, a first single-pole double-throw switch and a second single-pole double-throw switch; The signal output end of the phase-locked loop is connected to the first active end of the first single-pole double-throw switch and to the input end of the first frequency multiplier, the fixed end of the first single-pole double-throw switch is connected to the input end of the second frequency multiplier, and the output end of the first frequency multiplier and the output end of the second frequency multiplier respectively output millimeter-wave local oscillator signals; The phase-locked loop is multiplexed and connected in series with the frequency divider; the output end of the frequency divider is connected to the first active end of the second single-pole double-throw switch, and the fixed end of the second single-pole double-throw switch outputs the C-band local oscillator signal; The phase-locked loop, the first frequency multiplier, the second frequency multiplier and the first single-pole double-throw switch form a millimeter wave frequency source; the phase-locked loop is multiplexed to form a C-band frequency source with the frequency divider and the second single-pole double-throw switch to achieve the function of outputting a millimeter wave local oscillator signal and a C-band dual-frequency local oscillator signal.

2. A frequency source for dual-frequency fusion multiplexing according to claim 1, characterized in that: The operating frequency of the phase-locked loop is between the C-band and the millimeter-wave band; The second active end of the first single-pole double-throw switch is connected to the external millimeter-wave signal source, and the switching with the external millimeter-wave signal source input is realized through the first single-pole double-throw switch; The second active end of the second single-pole double-throw switch is connected to the external C-band signal source, and the switching between the phase-locked loop and the external C-band signal source is achieved through the second single-pole double-throw switch.

3. A full-function millimeter wave CMOS 4+1 phased array chip, characterized in that: include: Millimeter wave mixers, including millimeter wave up mixers and millimeter wave down mixers; A combiner, an output end of which is connected to the radio frequency end of the millimeter wave down-mixer; A splitter, an input end of which is connected to the radio frequency end of the millimeter wave up-mixer; a phased array front end including a plurality of Category I radio frequency channels; The first type of radio frequency channel includes a receiving channel and a transmitting channel, and each channel includes an antenna terminal and a common terminal; The common end of the receiving channel is connected to the combining end of the combiner, and the common end of the transmitting channel is connected to the branching end of the brancher; A calibration channel, comprising a second type of radio frequency channel, a calibration single-pole double-throw switch, a calibration antenna terminal, a calibration signal terminal and a calibration local oscillator terminal; the calibration antenna terminal is coupled and connected to the antenna terminal of the first type of radio frequency channel; A dual-frequency fusion multiplexing frequency source as claimed in claim 1 or 2, wherein the output end of the first frequency multiplier is connected to the calibration local oscillator end, and the output end of the second frequency multiplier is connected to the local oscillator end of the millimeter wave mixer.

4. A full-function millimeter wave CMOS 4+1 phased array chip according to claim 3, characterized in that: The antenna end of the first type of radio frequency channel is used to connect to the millimeter wave phased array antenna; The receiving channel of the first type of radio frequency channel includes a millimeter wave variable gain low noise amplifier and a receiving phase shifter in sequence from the antenna end to the common end; The transmitting channel of the first type of radio frequency channel includes a millimeter wave variable gain power amplifier and a transmitting phase shifter in sequence from the antenna end to the common end.

5. The full-function millimeter wave CMOS 4+1 phased array chip according to claim 3, characterized in that: The second type of radio frequency channels of the calibration channel include a calibration receiving channel and a calibration transmitting channel; The calibration receiving channel includes a low noise amplifier and a calibration down mixer, and the calibration transmitting channel includes a power amplifier and a calibration up mixer; The output end of the power amplifier is connected to the first active end of the calibration single-pole double-throw switch, the input end of the low-noise amplifier is connected to the second active end of the calibration single-pole double-throw switch, and the fixed end of the calibration single-pole double-throw switch serves as the calibration antenna end; the calibration antenna end is coupled and connected to the antenna ends of the receiving channel and the transmitting channel of each first-class radio frequency channel of the phased array front end to achieve amplitude and phase calibration between multiple channels; the calibration signal end inputs or outputs the calibration signal through a balun.

6. A full-function millimeter wave CMOS 4+1 phased array chip according to claim 5, characterized in that: The output end of the first frequency multiplier of the millimeter wave frequency source is connected to the local oscillator end of the calibration up-mixer and the calibration down-mixer; the output end of the second frequency multiplier of the millimeter wave frequency source is connected to the local oscillator end of the millimeter wave down-mixer and to the input end of the first orthogonal signal generator to generate multiple orthogonal local oscillator signals connected to the local oscillator end of the millimeter wave up-mixer; The intermediate frequency signal is connected to the intermediate frequency end of the millimeter wave up-mixer through the multi-channel orthogonal intermediate frequency signals output by the second orthogonal signal generator. The millimeter wave up-mixer mixes the multi-channel orthogonal local oscillator signals with the multi-channel orthogonal intermediate frequency signals to output an upper sideband millimeter wave signal to suppress the image interference signal of the lower sideband.

7. A C-band / intermediate frequency transceiver multiplexing chip, characterized in that: include: C-band / IF transceiver channel, including C-band / IF receiving channel and C-band / IF transmitting channel; Transceiver single-pole double-throw switch, including a receiving single-pole double-throw switch and a transmitting single-pole double-throw switch; A dual-frequency fusion multiplexing frequency source as claimed in claim 1 or 2, wherein the C-band frequency source output end, i.e., the fixed end of the second single-pole double-throw switch, is connected to the local oscillator end of the C-band / intermediate frequency transceiver channel; The intermediate frequency end of the C-band / intermediate frequency transceiver channel is connected to the fixed end of the transceiver single-pole double-throw switch; By controlling the connection relationship between the fixed end and the active end of the transceiver single-pole double-throw switch, the C-band / intermediate frequency transceiver multiplexing chip is reused to achieve the selection and switching of different signal paths.

8. A C-band / intermediate frequency transceiver multiplexing chip according to claim 7, characterized in that: The C-band / intermediate frequency receiving channel comprises a C-band / intermediate frequency variable gain low noise amplifier and a C-band / intermediate frequency down mixer connected in series in sequence; the C-band / intermediate frequency transmitting channel comprises a C-band / intermediate frequency up mixer and a C-band / intermediate frequency variable gain power amplifier connected in series in sequence; The C-band / intermediate frequency variable gain low noise amplifier is connected to the fixed end of the receiving single-pole double-throw switch, and the C-band / intermediate frequency variable gain power amplifier is connected to the fixed end of the transmitting single-pole double-throw switch; By controlling the connection relationship between the fixed end and the active end of the transceiver single-pole double-throw switch, the C-band / intermediate frequency transceiver multiplexing chip is reused to achieve the gating and switching of different signal paths.

9. A dual-frequency fusion radio frequency transceiver, characterized in that: include: A full-function millimeter wave CMOS 4+1 phased array chip as claimed in any one of claims 3 to 6; A C-band / intermediate frequency transceiver multiplexing chip as claimed in claim 7 or 8, referred to as a first C-band / intermediate frequency transceiver multiplexing chip; a C-band front end, referred to as the first C-band front end; The intermediate frequency end of the full-function millimeter wave CMOS 4+1 phased array chip is connected to the first active end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip, and the signal end of the first C-band front end is connected to the second active end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip; The switching between the intermediate frequency signal path and the C-band signal path is achieved by controlling the connection relationship between the fixed end and the active end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip.

10. The dual-frequency fusion radio frequency transceiver according to claim 9, characterized in that: Control the fixed end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip to be connected to the first active end, the first active end is connected in series with a balun and the intermediate frequency end of the full-function millimeter wave CMOS 4+1 phased array chip to achieve the connection between the first C-band / intermediate frequency transceiver multiplexing chip and the full-function millimeter wave CMOS 4+1 phased array chip, and disconnected from the first C-band front end, thereby forming a millimeter wave phased array transceiver; The fixed end of the transceiver single-pole double-throw switch controlling the first C-band / intermediate frequency transceiver multiplexing chip is connected to the second active end, the first C-band / intermediate frequency transceiver multiplexing chip is multiplexed to be connected to the first C-band front end, and is disconnected from the full-function millimeter wave CMOS 4+1 phased array chip to realize the first C-band transceiver.

11. A full-function dual-frequency fusion radio frequency transceiver system, characterized in that: include: A dual-frequency fusion radio frequency transceiver as claimed in claim 9 or 10; A C-band / intermediate frequency transceiver multiplexing chip as claimed in claim 7 or 8, referred to as a second C-band / intermediate frequency transceiver multiplexing chip; a C-band front end, referred to as a second C-band front end; Fully digital control logic circuit; The second C-band front-end signal terminal is connected to one active terminal of the transceiver single-pole double-throw switch of the second C-band / intermediate frequency transceiver multiplexing chip, and the other active terminal is left floating, so as to realize the second C-band transceiver; The full-function dual-band fusion RF transceiver system has three working modes: the concurrent working mode of the millimeter-wave phased array transceiver and the C-band transceiver; the C-band / intermediate frequency transceiver multiplexing chip supports the independent working mode of the full-function millimeter-wave CMOS 4+1 phased array chip; and the multiplexed C-band / intermediate frequency transceiver multiplexing chip realizes the coordinated working mode of two C-band transceivers.

12. A full-function dual-frequency fusion radio frequency transceiver system according to claim 11, characterized in that: A control instruction is sent through a fully digital control logic circuit to control the connection relationship between the fixed end and the active end of the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip, that is, the connection relationship between the first C-band / intermediate frequency transceiver multiplexing chip and the full-function millimeter-wave CMOS4+1 phased array chip and the first C-band front end, so as to realize the working switching of the millimeter-wave transceiver and the first C-band transceiver.

13. A full-function dual-frequency fusion radio frequency transceiver system according to claim 11, characterized in that: For the millimeter-wave phased array transceiver and C-band transceiver fusion concurrent working mode, the all-digital control logic circuit provides control instructions to the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip, so that the fixed end is connected to the first active end, controls the dual-frequency fusion RF transceiver and the second C-band transceiver to work simultaneously, and controls to stop the first C-band front end from working, so as to finally realize the millimeter-wave phased array transceiver and C-band transceiver fusion concurrent working mode.

14. A full-function dual-frequency fusion radio frequency transceiver system according to claim 11, characterized in that: For the C-band / intermediate frequency transceiver multiplexing chip supporting the full-function millimeter wave CMOS 4+1 phased array chip independent working mode, the all-digital control logic circuit provides a control instruction to the second C-band transceiver to stop the operation of the C-band transceiver, and at the same time provides a control instruction to the transceiver single-pole double-throw switch of the first C-band / intermediate frequency transceiver multiplexing chip to connect the fixed end with the first active end, so as to realize the first C-band / intermediate frequency transceiver multiplexing chip as an intermediate frequency module to support the millimeter wave phased array transceiver independent working mode.

15. A full-function dual-frequency fusion radio frequency transceiver system according to claim 11, characterized in that: For the multiplexed C-band / intermediate frequency transceiver multiplexing chip to realize the collaborative working mode of two C-band transceivers, the all-digital control logic circuit provides control instructions to the full-function millimeter wave CMOS 4+1 phased array chip to stop the operation of the full-function millimeter wave CMOS 4+1 phased array chip, and at the same time controls the first C-band transceiver and the second C-band transceiver to work together, thereby forming an independent working mode of a two-input / two-output C-band transceiver to achieve doubling of the transmission rate.

16. A full-function dual-frequency fusion radio frequency transceiver system according to claim 11, characterized in that: The full-function dual-band fusion RF transceiver system also includes an ESD protection circuit, which is electrically connected to the full-function millimeter wave CMOS4+1 phased array chip, C-band front end and C-band / intermediate frequency transceiver multiplexing chip to prevent or reduce damage to electronic equipment and circuits caused by electrostatic discharge.

17. A communication device, characterized in that: Including the dual-frequency fusion multiplexing frequency source as described in claim 1 or 2; or, including the full-function millimeter wave CMOS 4+1 phased array chip as described in any one of claims 3-6; or, including the C-band / intermediate frequency transceiver multiplexing chip as described in claim 7 or 8; or, including the dual-frequency fusion RF transceiver as described in claim 9 or 10; or, including a full-function dual-frequency fusion RF transceiver system architecture and its multiple operating modes as described in any one of claims 11-16.

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