Semiconductor device
By designing a gate stack structure and a trench isolation structure in a semiconductor device to make contact, and combining multiple insulating layers, the problem of leakage current introduced by the trench isolation structure is solved, thereby improving electrical performance and enhancing structural stability.
CN118841437BActive Publication Date: 2026-06-30FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
- Filing Date
- 2024-06-21
- Publication Date
- 2026-06-30
Smart Images
Figure CN118841437B_ABST
Abstract
This application discloses a semiconductor device. The semiconductor device includes: a substrate; a trench isolation structure disposed in the substrate and adjacent to at least one active region; a gate stack structure disposed on the substrate and in contact with the trench isolation structure, wherein a first portion of the gate stack structure is located on the trench isolation structure, and a second portion of the gate stack structure is located on the active region; and a first gate sidewall disposed on the trench isolation structure and in direct contact with the gate stack structure; wherein the lowest point of the first gate sidewall is higher than the lowest point of the first portion. The above-described semiconductor device can effectively avoid leakage current generation, thereby improving the electrical performance of the semiconductor device. Furthermore, utilizing the trench isolation structure and the gate stack structure can also improve the structural stability of the semiconductor device, thereby increasing the device yield.
Need to check novelty before this filing date? Find Prior Art