Vertical cavity surface emitting laser and method of manufacturing

Abstract

The present disclosure provides a vertical cavity surface emitting laser and a manufacturing method thereof. The vertical cavity surface emitting laser comprises a first mirror, an active region, an oxidation confinement structure and a second mirror which are sequentially stacked, the oxidation confinement structure comprises at least one oxidation inhibition layer and at least one oxidation layer, the oxidation inhibition layer and the oxidation layer are stacked along the direction from the first mirror to the second mirror, and the oxidation layer is spaced from the active region by at least one oxidation inhibition layer, and the oxidation inhibition layer is used for inhibiting the diffusion of oxygen elements. The reliability of the vertical cavity surface emitting laser can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, and in particular to a vertical cavity surface emitting laser and a manufacturing method. BACKGROUND

[0002] A vertical cavity surface emitting laser (VCSEL for short) is a kind of semiconductor laser, which has the advantages of good mode, low threshold, good stability, long life, high modulation rate, high integration, small divergence angle, high coupling efficiency, and low cost, and is suitable for application in the fields of parallel optical transmission and parallel optical interconnection.

[0003] In the prior art, a vertical cavity surface emitting laser includes a top mirror, an active region, a current confinement layer, and a bottom mirror. The top mirror and the bottom mirror form an optical resonant cavity of the laser. The active region is a recombination region of carriers, which is used to generate laser. The current confinement layer is used to concentrate the current in the laser emitting region, to improve the efficiency and maintain good beam quality. Oxidation process is a commonly used technology for manufacturing the current confinement layer. However, the oxidation layer formed by the oxidation process has the problem of large stress bias, which is easy to cause damage to the active region, and there is also the problem of interface oxidation of the active region near the interface of the oxidation layer. The above factors all limit the further improvement of the reliability of the vertical cavity surface emitting laser. SUMMARY

[0004] Therefore, it is necessary to provide a vertical cavity surface emitting laser capable of reducing the damage of the oxidation layer to the active region and inhibiting the problem of interface oxidation of the active region, to improve the reliability of the vertical cavity surface emitting laser.

[0005] According to some embodiments of the present application, a vertical cavity surface emitting laser is provided, which includes a first mirror, an active region, an oxidation structure, and a second mirror which are sequentially stacked, the oxidation structure includes at least one oxidation inhibition layer and at least one oxidation layer, the oxidation inhibition layer and the oxidation layer are stacked along the direction from the first mirror to the second mirror, and the oxidation layer is spaced from the active region by at least one oxidation inhibition layer, and the oxidation inhibition layer is used to inhibit the diffusion of oxygen elements.

[0006] In some embodiments of the present application, the oxidation structure has a conduction region and an oxidation region outside the conduction region, the oxidation inhibition layer located in the conduction region includes a first base material and an oxidation inhibition element doped in the first base material, and the oxidation inhibition element includes one or more of tellurium element and zinc element.

[0007] In some embodiments of the present disclosure, the oxidation inhibition layer has multiple layers, and the oxidation layer is arranged between each two adjacent layers of the oxidation inhibition layer.

[0008] In some embodiments of the present disclosure, the oxidation inhibition layer closest to the first mirror is further doped with silicon element, and the doping concentration of the silicon element is greater than the doping concentration of the oxidation inhibition element.

[0009] The oxidation inhibition layer closest to the second mirror is further doped with carbon element, and the doping concentration of the carbon element is greater than the doping concentration of the oxidation inhibition element.

[0010] In some embodiments of the present disclosure, the doping concentration of the oxidation inhibition element in the oxidation inhibition layer is 5×10 17 cm -3 and / or,

[0011] The doping concentration of the silicon element in the oxidation inhibition layer closest to the first mirror is 5×10 17 cm -3 ~1×10 20 cm -3 The doping concentration of the carbon element in the oxidation inhibition layer closest to the second mirror is 5×10 17 cm -3 ~1×10 20 cm -3 .

[0012] In some embodiments of the present disclosure, the oxidation layer has multiple layers, and the multiple layers of the oxidation inhibition layer and the multiple layers of the oxidation layer are arranged alternately layer by layer.

[0013] In some embodiments of the present disclosure, the oxidation layer located in the conduction region comprises a second base material, and the first base material and the second base material are both compounds containing group III element and group V element; wherein,

[0014] The first base material and the second base material are both compounds not containing aluminum, and the first base material and the second base material are the same; or,

[0015] The first base material and the second base material are both compounds containing aluminum, and the content of aluminum element in the first base material is lower than the content of aluminum element in the second base material.

[0016] In some embodiments of the present disclosure, the doping concentration of the oxidation inhibition element at the central position of the oxidation inhibition layer is lower than the doping concentration of the oxidation inhibition element at the two side surfaces of the oxidation inhibition layer.

[0017] In some embodiments of the present disclosure, the total thickness of all the oxidation inhibition layers is less than the total thickness of all the oxidation layers.

[0018] Further, the present disclosure also provides a manufacturing method of a vertical cavity surface emitting laser as described in any of the above embodiments, comprising the following steps:

[0019] forming the first reflector and the active region on the substrate in sequence;

[0020] depositing at least one oxidation precursor layer and at least one oxidation inhibition layer on the active region, the material of the oxidation inhibition layer comprising the first base material and a doping element doped in the first base material;

[0021] forming the second reflector on the oxidation inhibition layer and the oxidation precursor layer; and,

[0022] performing oxidation treatment on the oxidation inhibition layer and the oxidation precursor layer located in the oxidation region to form the oxidation inhibition layer and the oxidation layer respectively.

[0023] In some embodiments of the present disclosure, the oxidation inhibition layer and the oxidation precursor layer are sequentially deposited in the same deposition chamber, and the temperature of the deposition chamber is the first temperature when the deposition of the oxidation inhibition layer is completed. After the formation of the oxidation inhibition layer and before the formation of the oxidation precursor layer, the temperature of the deposition chamber is first lowered to be lower than the first temperature, and then the temperature of the deposition chamber is raised to be the second temperature, which is higher than the first temperature by more than 50℃.

[0024] The vertical cavity surface emitting laser of at least one of the above embodiments is provided with an oxidation structure. The oxidation structure comprises an oxidation inhibition layer and an oxidation layer, and the oxidation inhibition layer is used to inhibit the diffusion of oxygen elements. In the oxidation process, the oxidation inhibition layer can inhibit the diffusion of oxygen elements and inhibit the oxidation from the oxidation layer to the active region interface, thereby inhibiting the oxidation problem of the active region interface. Moreover, the oxidation inhibition layer arranged between the oxidation layer and the active region can also avoid the direct contact between the oxidation layer and the active region, thereby reducing the damage of the oxidation layer to the active region. Therefore, the reliability of the vertical cavity surface emitting laser is also improved.

[0025] The above description is only a summary of the technical solutions of the present application. In order to enable one skilled in the art to better understand the technical means of the present application and to implement the same according to the content of the description, the following will describe the preferred embodiments of the present application in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following will briefly introduce the drawings needed to be used in the embodiments description. Obviously, the drawings in the following description are only some embodiments of the present disclosure, and for those skilled in the art, other drawings can also be obtained from these drawings without creative effort.

[0027] Figure 1 A cross-sectional structure schematic diagram of a vertical cavity surface emitting laser of an embodiment;

[0028] Figure 2 A cross-sectional structure schematic diagram of a vertical cavity surface emitting laser of another embodiment;

[0029] Figure 3 A cross-sectional structure schematic diagram of a vertical cavity surface emitting laser of another embodiment;

[0030] Figure 4 A temperature change curve of a deposition chamber of a manufacturing method of an embodiment.

[0031] In the drawings, reference signs and their meanings are as follows:

[0032] 100, substrate; 110, first mirror; 120, active region; 130, oxidation inhibition layer; 140, oxidation layer; 150, second mirror; 160, buffer layer; 170, ohmic contact layer. DETAILED DESCRIPTION

[0033] In order to facilitate understanding of the present text, the following will be a more comprehensive description of the present text. The preferred embodiments of the present text are given in the text. However, the present text can be realized in many different forms, and is not limited to the embodiments described in the text. On the contrary, the purpose of providing these embodiments is to make the content of the present text more thorough and comprehensive.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present text belongs. The terms used in the specification of the present text are only used to describe the specific embodiments of the present text, and are not intended to limit the present text.

[0035] It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or connected to the other element or layer or intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section.

[0036] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0037] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising", when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0038] The present disclosure provides a vertical cavity surface emitting laser, which includes a first mirror, an active region, an oxidation structure, and a second mirror, which are sequentially stacked, the oxidation structure includes at least one oxidation inhibition layer and at least one oxidation layer, the oxidation inhibition layer and the oxidation layer are sequentially stacked along a direction from the first mirror to the second mirror, and the oxidation layer is separated from the active region by at least one oxidation inhibition layer. The oxidation inhibition layer is used to inhibit the diffusion of oxygen elements.

[0039] This vertical-cavity surface-emitting laser (VCSEL) incorporates an oxide structure. This oxide structure includes an oxide suppression layer and an oxide layer. The oxide suppression layer suppresses oxide diffusion between the oxide layers located on either side of it. During oxidation, the oxide suppression layer inhibits oxygen diffusion and oxidation from the oxide layer towards the active region interface, thereby mitigating active region interface oxidation problems. Furthermore, the oxide suppression layer positioned between the oxide layer and the active region prevents direct contact between them, reducing damage to the active region caused by the oxide layer. This further improves the reliability of the VCSEL.

[0040] Figure 1 This is a schematic cross-sectional view of a vertical-cavity surface-emitting laser disclosed herein. (Refer to...) Figure 1 As shown, the vertical cavity surface-emitting laser includes a substrate 100 and a first reflector 110, an active region 120, an oxide structure, and a second reflector 150 sequentially stacked on the substrate 100. The first reflector 110, the active region 120, the oxide structure, and the second reflector 150 can be sequentially fabricated on the substrate 100 via epitaxial growth. The substrate 100 serves as the substrate for epitaxial growth and supports the epitaxial structure.

[0041] Reference Figure 1 As shown, in this embodiment, the oxide structure may include one oxide inhibition layer 130 and two oxide layers 140. The oxide inhibition layer 130 is used to inhibit the diffusion of oxygen.

[0042] As examples of this embodiment, two oxide layers 140 are sequentially stacked on the surface of the oxidation suppression layer 130 away from the active region 120. The oxide structure has a conductive region and an oxide region located outside the conductive region. The two oxide layers 140 can be made of the same material or different materials.

[0043] It can be understood that the conductive region refers to the area in the oxide structure that allows current to flow, and the material in the conductive region is in an unoxidized state. The oxide region refers to the high-resistivity region formed after oxidation in the oxide structure. Each oxide suppression layer 130 and each oxide layer 140 includes portions located in the conductive region and portions located in the oxide region.

[0044] In this embodiment, the oxidation inhibition layer 130 located in the conduction region includes a first base material and an oxidation inhibition element doped in the first base material, and the oxidation inhibition element includes one or more of tellurium element and zinc element. The first base material doped with the tellurium element and the zinc element can better inhibit and block the oxygen element, so as to inhibit the diffusion of the oxygen element, which can inhibit the oxidation of the active region 120. It can be understood that the oxidation inhibition layer 130 located in the oxidation region can include the oxidation product of the first base material. Further, the oxidation inhibition layer 130 located in the oxidation region can also include the first base material that is not completely oxidized.

[0045] In this embodiment, the oxidation layer 140 located in the conduction region includes a second base material, and the second base material is not doped with the oxidation inhibition element, which can make the second base material more easily oxidized, so as to ensure that the oxidation structure has better current performance. In this embodiment, by doping the oxidation inhibition element in the oxidation inhibition layer 130, the oxidation inhibition layer 130 and the oxidation layer 140 can have the same or similar base material, so as to simplify the preparation process. It can be understood that in other embodiments, the oxidation inhibition layer 130 can also use other known materials or structures that can inhibit the diffusion of the oxygen element.

[0046] As some examples of this embodiment, the first base material and the second base material are both compounds including group III elements and group V elements.

[0047] In some examples, the first base material and the second base material are compounds not containing aluminum, and the first base material and the second base material are the same. For example, the first base material and the second base material can be selected from one or more of gallium arsenide (GaAs) and gallium indium phosphide (GaInP).

[0048] In other examples, the first base material and the second base material are compounds containing aluminum, and the content of aluminum element in the first base material is lower than that in the second base material. For example, the first base material and the second base material can be selected from one or more of aluminum gallium arsenide (AlGaAs), aluminum gallium indium arsenide (AlGaInAs), and aluminum gallium indium phosphide (AlGaInP). Aluminum element is easy to be oxidized and form aluminum oxide, and using a material with a lower content of aluminum as the first base material is beneficial to make the oxidation inhibition layer 130 have a better effect of inhibiting oxidation diffusion.

[0049] Further, in this embodiment, the atomic content of aluminum element in the first base material can be less than 90%, so that the first base material is less likely to be oxidized. The atomic content of aluminum element in the second base material can be higher than 90%, so that the second base material is more likely to be oxidized.

[0050] As some examples of this embodiment, the doping concentration of the oxidation suppression element in the oxidation suppression layer 130 is 5 × 10⁻⁶. 17 cm -3 The following is an explanation of how this ensures good oxidation diffusion suppression while preventing diffusion into the oxide layer 140 due to excessive oxidation suppression elements. It can be understood that when the oxidation suppression elements include both tellurium and zinc, the doping concentration of the oxidation suppression elements refers to the total doping concentration of tellurium and zinc.

[0051] In this example, the doping concentration of the oxidation suppression element in the oxidation suppression layer 130 can be 1×10⁻⁶. 15 cm -3 ~5×10 17 cm -3 For example, the doping concentration of the oxidation suppression element in the oxidation suppression layer 130 can be 1 × 10⁻⁶. 15 cm -3 3×10 15 cm -3 5×10 15 cm -3 7×10 15 cm -3 1×10 16 cm -3 3×10 16 cm -3 5×10 16 cm -3 7×10 16 cm -3 1×10 17 cm -3 3×10 17 cm -3 5×10 17 cm -3 Alternatively, the doping concentration of the oxidation inhibitor can be between any two of the above doping concentrations.

[0052] As examples of this embodiment, the doping concentration of the oxidation suppressing element at the center of the oxidation suppressing layer 130 is lower than its doping concentration on the two side surfaces of the oxidation suppressing layer 130. Further, in this embodiment, the doping concentration of the oxidation suppressing element can first decrease and then increase from one side surface of the oxidation suppressing layer 130 to the other. A higher doping concentration on the surface of the oxidation suppressing layer 130 is beneficial for maintaining a better effect on suppressing oxidation diffusion, while a lower doping concentration at the center is beneficial for keeping the oxide region in a high-resistivity state, thereby maintaining a good current-limiting effect on the oxide structure while suppressing oxidation diffusion.

[0053] Figure 2 FIG. 1 is a schematic view of a cross-sectional structure of a vertical cavity surface emitting laser according to an embodiment of the present disclosure. Figure 2 As shown in FIG. 1, the vertical cavity surface emitting laser includes a substrate 100, a first mirror 110, an active region 120, an oxidation structure, and a second mirror 150 which are sequentially stacked on the substrate 100. The first mirror 110, the active region 120, the oxidation structure, and the second mirror 150 can be prepared on the substrate 100 by epitaxial growth, and the substrate 100 can be used as a base material for epitaxial growth and for carrying the epitaxial structure.

[0054] As shown in FIG. 1, the vertical cavity surface emitting laser includes a substrate 100, a first mirror 110, an active region 120, an oxidation structure, and a second mirror 150 which are sequentially stacked on the substrate 100. The first mirror 110, the active region 120, the oxidation structure, and the second mirror 150 can be prepared on the substrate 100 by epitaxial growth, and the substrate 100 can be used as a base material for epitaxial growth and for carrying the epitaxial structure. Figure 2 As shown in FIG. 2, as some examples of this embodiment, the oxidation inhibition layer 130 has multiple layers, and an oxidation layer 140 is arranged between each pair of adjacent oxidation inhibition layers 130.

[0055] As shown in FIG. 2, as some examples of this embodiment, the oxidation inhibition layer 130 has multiple layers, and an oxidation layer 140 is arranged between each pair of adjacent oxidation inhibition layers 130. Figure 2 As shown in FIG. 3, in this embodiment, the oxidation structure can include two oxidation inhibition layers 130 and one oxidation layer 140. The oxidation layer 140 is arranged between the two oxidation inhibition layers 130, so that the oxidation layer 140 is spaced apart from the active region 120 by one of the oxidation inhibition layers 130, and the oxidation layer 140 is spaced apart from the second mirror 150 by the other oxidation inhibition layer 130. The materials of the two oxidation inhibition layers 130 can be the same or different.

[0056] In this embodiment, the oxidation structure has a conduction region and an oxidation region outside the conduction region.

[0057] As shown in FIG. 4, the oxidation structure of this embodiment is different from the oxidation structure of the embodiment of FIG. 3 in the number and arrangement of the oxidation inhibition layer 130 and the oxidation layer 140. Figure 2 The materials of the oxidation inhibition layer 130 and the oxidation layer 140 of this embodiment can be selected according to the content shown in FIG. 1. Figure 1 Figure 1 As shown in FIG. 5, in this embodiment, by arranging multiple oxidation inhibition layers 130 and arranging an oxidation layer 140 between each pair of adjacent oxidation inhibition layers 130, the effect of inhibiting oxidation diffusion is further improved.

[0058] As shown in FIG. 5, in this embodiment, by arranging multiple oxidation inhibition layers 130 and arranging an oxidation layer 140 between each pair of adjacent oxidation inhibition layers 130, the effect of inhibiting oxidation diffusion is further improved. Figure 2 As some examples of this embodiment, the oxidation inhibition layer 130 closest to the first mirror 110 is also doped with silicon elements, and the doping concentration of the silicon elements is greater than the doping concentration of the oxidation inhibition elements. Simultaneous doping of silicon elements in the oxidation inhibition layer 130 can make the oxidation inhibition layer 130 form N-type doping. This is conducive to improving the electrical connection performance between the first mirror 110 and the oxidation structure.

[0059]

[0060] ​​In this example, the silicon doping concentration in the oxide suppression layer 130 closest to the first reflector 110 can be 5 × 10⁻⁶. 17 cm -3 ~1×10 20 cm -3 For example, the silicon doping concentration is 5 × 10⁻⁶. 17 cm -3 7×10 17 cm -3 1×10 18 cm -3 3×10 18 cm -3 5×10 18 cm -3 7×10 18 cm -3 1×10 19 cm -3 3×10 19 cm -3 5×10 19 cm -3 7×10 19 cm -3 1×10 20 cm -3 Alternatively, the silicon doping concentration can be between any two of the above concentrations.

[0061] As examples of this embodiment, the doping element in the oxide suppression layer 130 closest to the second reflector 150 also includes carbon, and the carbon doping concentration is greater than the tellurium doping concentration. Simultaneous doping of carbon in the oxide suppression layer 130 enables it to form a p-type doped structure. This is beneficial for improving the electrical connection performance between the second reflector 150 and the oxide structure.

[0062] In this example, the carbon doping concentration in the oxidation suppression layer 130 closest to the second reflector 150 can be 5 × 10⁻⁶. 17 cm -3 ~1×10 20 cm -3 For example, the carbon doping concentration is 5 × 10⁻⁶. 17 cm -3 7×10 17 cm -3 1×10 18 cm -3 3×10 18 cm -3 5×10 18 cm -3 7×10 18 cm -31×10 19 cm -3 3×10 19 cm -3 5×10 19 cm -3 7×10 19 cm -3 1×10 20 cm -3 Alternatively, the carbon doping concentration can be between any two of the above concentrations.

[0063] Figure 3 This is a schematic cross-sectional view of a vertical-cavity surface-emitting laser disclosed herein. (Refer to...) Figure 3 As shown, the vertical cavity surface-emitting laser includes a substrate 100 and a first reflector 110, an active region 120, an oxide structure, and a second reflector 150 sequentially stacked on the substrate 100. The first reflector 110, the active region 120, the oxide structure, and the second reflector 150 can be sequentially fabricated on the substrate 100 via epitaxial growth. The substrate 100 serves as the substrate for epitaxial growth and supports the epitaxial structure.

[0064] As some examples of this embodiment, the oxidation inhibition layer 130 has multiple layers, the oxide layer 140 also has multiple layers, and the multiple oxidation inhibition layers 130 and the multiple oxide layers 140 are alternately arranged layer by layer.

[0065] Reference Figure 3 As shown, in this embodiment, along the direction away from the active region 120, two oxide suppression layers 130 and two oxide layers 140 are sequentially stacked in the manner of oxide suppression layer 130, oxide layer 140, oxide suppression layer 130, oxide layer 140. The oxide layer 140 is separated from the active region 120 by an oxide suppression layer 130. The materials of the two oxide layers 140 can be the same or different. The materials of the two oxide suppression layers 130 can also be the same or different.

[0066] like Figure 3 The oxidation structure shown in the embodiments is similar to Figure 1 The main difference in the oxidation structure shown in the embodiment lies in the number and arrangement of the oxidation inhibition layer 130 and the oxide layer 140. The materials of the oxidation inhibition layer 130 and the oxide layer 140 in this embodiment can be referred to Figure 1 Select from the options shown.

[0067] exist Figure 3In the illustrated embodiment, by providing the multi-layer oxidation inhibition layer 130 and the multi-layer oxidation layer 140, the oxidation inhibition effect and the oxidation structure current limiting effect can be improved simultaneously. In other embodiments, the number of the oxidation inhibition layer 130 can be more than two, such as three, four or more. The number of the oxidation layer 140 can also be more than two, such as three, four or more.

[0068] As some examples of this embodiment, the total thickness of all the oxidation inhibition layers 130 is less than the total thickness of all the oxidation layers 140. Further, the thickness of each single oxidation inhibition layer 130 is also less than the thickness of each single oxidation layer 140.

[0069] In this example, the thickness of each oxidation inhibition layer 130 can be 1 nm to 10 nm. For example, the thickness of the oxidation inhibition layer 130 can be 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 7 nm, 9 nm, 10 nm, or the thickness of the oxidation inhibition layer can be between any two of the above thicknesses.

[0070] In this example, the thickness of each oxidation layer 140 can be 5 nm to 50 nm. For example, the thickness of the oxidation layer 140 can be 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, or the thickness of the oxidation layer 140 can be between any two of the above thicknesses.

[0071] As some examples of this embodiment, the thickness of each oxidation layer 140 in the multi-layer oxidation layer 140 can gradually increase along the direction away from the active region 120. This can amplify the inhibition effect of the oxidation inhibition layer 130 on the oxidation diffusion.

[0072] As some examples of this embodiment, the second base material in each oxidation layer 140 is an aluminum-containing compound, and the aluminum content in the second base material in the multi-layer oxidation layer 140 can gradually increase along the direction away from the active region 120. This can amplify the inhibition effect of the oxidation inhibition layer 130 on the oxidation diffusion.

[0073] Figures 1 to 3 Other components of the vertical cavity surface emitting laser in the illustrated embodiments can be provided according to the following examples.

[0074] As some examples of this embodiment, the material of the substrate 100 can be selected from semiconductor crystalline materials. For example, the material of the substrate 100 can be gallium arsenide (GaAs).

[0075] Referring to Figures 1 to 3As shown, as some examples of this embodiment, the vertical cavity surface emitting laser can further include a buffer layer 160 disposed between the substrate 100 and the first mirror 110. The buffer layer 160 is used to buffer the stress caused by the lattice mismatch between the substrate 100 and the first mirror 110, so as to ensure that the first mirror 110 has a good lattice quality.

[0076] In this example, the material of the buffer layer 160 can be selected from N-type gallium arsenide materials.

[0077] In this embodiment, the first mirror 110 is a Distributed Bragg Reflector (DBR) having a high reflectivity for light of a specific wavelength band and a high transmissivity for light of other wavelength bands, which is used to reflect light of the specific wavelength band and allow light of other wavelength bands to pass through.

[0078] As some examples of this embodiment, the material of the first mirror 110 can include a plurality of layers of a first high refractive index material and a plurality of layers of a first low refractive index material, wherein the first high refractive index material has a higher refractive index than the first low refractive index material, and the layers of the first high refractive index material and the layers of the first low refractive index material are alternately stacked.

[0079] In this example, the first high refractive index material and the first low refractive index material are both semiconductor materials. Further, the first high refractive index material and the first low refractive index material are both N-type semiconductor materials. For example, the material of the first high refractive index material and the first low refractive index material can both be N-type aluminum gallium arsenide, wherein the aluminum content of the aluminum gallium arsenide in the first high refractive index material is higher than the aluminum content of the aluminum gallium arsenide in the first low refractive index material. The aluminum gallium arsenide with a higher aluminum content has a higher refractive index.

[0080] As some examples of this embodiment, the active region 120 can include a strained quantum well, and the material of the strained quantum well can be gallium indium arsenide (GaInAs). Further, the active region 120 can further include a quantum barrier, and the material of the quantum barrier can be aluminum gallium arsenide (AlGaAs). In this embodiment, the active region 120 can be composed of a plurality of groups of strained quantum well / quantum barrier.

[0081] In this embodiment, the second mirror 150 is a Distributed Bragg Reflector (DBR).

[0082] As some examples of this embodiment, the material of the second mirror 150 can include a plurality of layers of a second high refractive index material and a plurality of layers of a second low refractive index material, wherein the second high refractive index material has a higher refractive index than the second low refractive index material, and the layers of the second high refractive index material and the layers of the second low refractive index material are alternately stacked.

[0083] In this example, the second high refractive index material layer and the second low refractive index material layer are both semiconductor materials. Further, the second high refractive index material layer and the second low refractive index material layer are both P-type semiconductor materials. For example, the materials of the second high refractive index material layer and the second low refractive index material layer can both be P-type aluminum gallium arsenide, wherein the aluminum content of the aluminum gallium arsenide in the second high refractive index material layer is higher than the aluminum content of the aluminum gallium arsenide in the second low refractive index material layer.

[0084] Referring to Figures 1 to 3 As some examples of this embodiment, the vertical cavity surface emitting laser can further include an ohmic contact layer 170 stacked on the second mirror 150 away from the first mirror 110, as shown.

[0085] In this example, the material of the ohmic contact layer 170 can be selected from gallium arsenide.

[0086] Further, the present disclosure also provides a method of manufacturing a vertical cavity surface emitting laser as shown. The method includes steps S1-S4, as follows. Figures 1 to 3

[0087] Step S1, forming a first mirror 110 and an active region 120 in sequence on a substrate 100.

[0088] In this embodiment, the material of the substrate 100 can be selected from gallium arsenide.

[0089] As some examples of this embodiment, before forming the first mirror 110 and the active region 120, the method further includes a step of preparing a buffer layer 160 on the substrate 100.

[0090] In this example, the method of preparing the buffer layer 160 can be chemical vapor deposition, such as metal organic chemical vapor deposition.

[0091] In this example, the material of the buffer layer 160 can be N-type doped gallium arsenide.

[0092] As some examples of this embodiment, the method of forming the first mirror 110 can be chemical vapor deposition, such as metal organic chemical vapor deposition.

[0093] In this example, the first mirror 110 can be a laminated structure composed of N-type doped aluminum gallium arsenide with a higher refractive index and N-type doped aluminum gallium arsenide with a lower refractive index.

[0094] As some examples of this embodiment, the method of forming the active region 120 can be chemical vapor deposition, such as metal organic chemical vapor deposition.

[0095] In this example, the active region 120 can be a laminated structure composed of gallium indium arsenide and aluminum gallium arsenide.​

[0096] As some examples of this embodiment, the deposition temperature when forming the first mirror 110 is higher than the deposition temperature when forming the active region 120. For example, the deposition temperature when forming the first mirror 110 can be 550-800℃, and the deposition temperature when forming the active region 120 can be 500-700℃.

[0097] At step S2, at least one suppression precursor layer and at least one oxidation precursor layer are deposited on the active region 120.

[0098] It can be understood that the suppression precursor layer is used as a precursor of the oxidation suppression layer 130, and the suppression precursor layer is converted into the oxidation suppression layer 130 in a subsequent oxidation process. The oxidation precursor layer is used as a precursor of the oxidation layer 140, and the oxidation precursor layer is converted into the oxidation layer 140 in a subsequent oxidation process. Therefore, the number and arrangement of the suppression precursor layer and the oxidation precursor layer can be arranged correspondingly according to the oxidation structure. For example, if the oxidation structure as shown in FIG. 1A is needed to be prepared, one suppression precursor layer and two oxidation precursor layers are sequentially deposited. If the oxidation structure as shown in FIG. 1B is needed to be prepared, one suppression precursor layer, one oxidation precursor layer, and one suppression precursor layer are sequentially deposited. If the oxidation structure as shown in FIG. 1C is needed to be prepared, one suppression precursor layer, one oxidation precursor layer, one suppression precursor layer, and one oxidation precursor layer are sequentially deposited. Figure 1 Figure 2 Figure 3

[0099] As some examples of this embodiment, the thickness of each suppression precursor layer is less than the thickness of each oxidation precursor layer, and further, the total thickness of all suppression precursor layers is less than the total thickness of all oxidation precursor layers.

[0100] In this example, the thickness of the suppression precursor layer can be 1-10nm.

[0101] In this example, the thickness of the oxidation precursor layer can be 5-50nm.

[0102] As some examples of this embodiment, the method for forming the suppression precursor layer can be chemical vapor deposition, such as metal organic chemical vapor deposition. When forming the suppression precursor layer, tellurium source or zinc source gas can be added into the reaction gas, so that the oxidation suppression element can be doped into the suppression precursor layer.

[0103] As some examples of this embodiment, the method for forming the oxidation precursor layer can be chemical vapor deposition, such as metal organic chemical vapor deposition.

[0104] ​​​As some examples of this embodiment, the inhibiting precursor layer and the oxidizing precursor layer can be sequentially deposited in the same deposition chamber, and the temperature of the deposition chamber is the first temperature when the deposition of the inhibiting precursor layer is completed. After the formation of the preceding inhibiting precursor layer and before the formation of the following oxidizing precursor layer, the temperature of the deposition chamber is first lowered to be lower than the first temperature, and then the temperature of the deposition chamber is raised to be the second temperature, which is higher than the first temperature by 50 DEG C or more. The process of first lowering the temperature and then raising the temperature to be higher can help to solidify the doped tellurium element in the inhibiting precursor layer, and can inhibit the diffusion of the tellurium element into the oxidizing precursor layer, thereby ensuring the oxidation performance of the oxidizing precursor layer.

[0105] As some examples of this embodiment, in the step of depositing the inhibiting precursor layer, the deposition temperature is controlled to be first lowered and then raised. By changing the deposition temperature when depositing the inhibiting precursor layer, the doping concentration of the oxidation inhibiting element in the inhibiting precursor layer can be first lowered and then raised.

[0106] Step S3, forming a second mirror 150 on the inhibiting precursor layer and the oxidizing precursor layer.

[0107] As some examples of this embodiment, the second mirror 150 can be formed by a chemical vapor deposition method, such as a metal organic chemical vapor deposition method.

[0108] In this example, the second mirror 150 can be a laminated structure composed of a P-type doped aluminum gallium arsenide with a higher refractive index and a P-type doped aluminum gallium arsenide with a lower refractive index.

[0109] As some examples of this embodiment, after the formation of the second mirror 150, a step of forming an ohmic contact layer 170 on the second mirror 150 can be further included.

[0110] In this example, the ohmic contact layer 170 can be formed by a chemical vapor deposition method, such as a metal organic chemical vapor deposition method.

[0111] As some examples of this embodiment, the first mirror 110, the active region 120, the inhibiting precursor layer, the oxidizing precursor layer, the second mirror 150, and the ohmic contact layer 170 can be sequentially deposited in the same deposition chamber. In the deposition, a corresponding gas source can be selected according to the material of each layer, and the gas source can include one or more of an organic indium compound, an organic gallium compound, an organic aluminum compound, an organic zinc compound, silane, arsine, and phosphine. A carrier gas such as hydrogen can also be included in the gas source.

[0112] Step S4, performing an oxidation treatment on the inhibiting precursor layer and the oxidizing precursor layer located in the oxidation region, to form an oxidation inhibiting layer 130 and an oxidation layer 140, respectively.

[0113] As some examples of this embodiment, before the oxidation process, an oxidation groove can be formed by means of photolithography and etching, which is used to realize selective oxidation of the inhibiting precursor layer and the oxidation precursor layer.

[0114] As some examples of this embodiment, the oxidation process can be thermal oxidation, for example, the oxidation precursor layer is oxidized through the oxidation groove in an oxidation furnace to form the oxidation layer 140, at this time, the material of the oxidation precursor layer in the conduction region is not oxidized, thus the material of the oxidation layer 140 in the conduction region is the material of the oxidation precursor layer. During the oxidation process, the inhibiting precursor layer is also oxidized or partially oxidized to form the oxidation inhibiting layer 130, at this time, the material of the inhibiting precursor layer in the conduction region is not oxidized, thus the material of the oxidation inhibiting layer 130 in the conduction region is the material of the inhibiting precursor layer.

[0115] As some examples of this embodiment, after the oxidation process, a step of forming an insulating protective layer to protect and isolate the oxidation groove can be further included.

[0116] As some examples of this embodiment, after the formation of the insulating protective layer, a step of forming a first electrode electrically connected to the first reflector 110 on the back surface of the substrate 100 and a second electrode electrically connected to the second reflector 150 on the front surface of the substrate 100 can be further included.

[0117] It can be understood that through the above steps S1-S4, the vertical cavity surface emitting laser in the present disclosure can be formed.

[0118] To further illustrate the process of the above-mentioned manufacturing method of the vertical cavity surface emitting laser, Figure 4 The temperature change curve of the deposition chamber of the manufacturing method of an embodiment is shown in the following figure. The following will be combined with the figure to further illustrate the process of the manufacturing method of the vertical cavity surface emitting laser. Figure 4 The preparation process of the vertical cavity surface emitting laser will be further illustrated in detail.

[0119] Combined with the above-mentioned manufacturing method of the vertical cavity surface emitting laser, Figure 4 As shown in the figure, between time t0-t1, the deposition temperature of the reaction chamber is controlled to be T1, and 42 pairs of N-type Al 0.88 Ga 0.12 As / N-type Al 0.18 Ga 0.92 As, as the first reflector 110. Between time t1-t2, the temperature of the reaction chamber is gradually decreased from T1 to T2. Then, between time t2-t3, the deposition temperature of the reaction chamber is controlled to be T2, and 6 periods of GaInAs / AlGaAs are deposited as the active region 120. Between time t3-t4, the deposition temperature of the reaction chamber is first decreased and then increased back to T3, and a thickness of 5nm of Te-doped Al 0.7 Ga 0.3As is deposited as an inhibiting precursor layer. Between time t4 and t5, the temperature of the reaction chamber is controlled to decrease from T3 and then increase to T4, which is 50°C higher than T3, to fix the tellurium element in the inhibiting precursor layer. Between time t5 and t6, the temperature of the reaction chamber is controlled to be T4, and Al 0.97 Ga 0.03 As is deposited as an oxidizing precursor layer. The content of aluminum in the oxidizing precursor layer is obviously higher than that in the inhibiting precursor layer. Between time t6 and t7, the temperature of the reaction chamber is controlled to be T5, and 22 pairs of P-type Al 0.86 Ga 0.14 As / P-type Al 0.1 Ga 0.9 As, as the second mirror 150, 40 nm thick gallium arsenide is re-deposited as an ohmic contact layer 170. After the deposition is completed, the substrate 100 is taken out of the deposition chamber, and the inhibiting precursor layer and the oxidizing precursor layer are subjected to an oxidation treatment.

[0120] It should be noted that the above-mentioned embodiments are only for illustrative purposes and do not mean to limit the present disclosure.

[0121] It should be understood that, unless otherwise explicitly stated herein, the execution of the steps is not strictly limited in sequence, and the steps can be executed in other sequences. Moreover, at least a part of the steps in the preparation process can include multiple sub-steps or multiple stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of the sub-steps or stages is not necessarily sequential, but can be executed in rotation or alternation with at least a part of other steps or sub-steps or stages of other steps.

[0122] Each embodiment in the specification is described in a progressive manner, and each embodiment focuses on the difference from other embodiments, and the same or similar parts between each embodiment can be referred to each other.

[0123] Each technical feature of the above embodiments can be combined arbitrarily, and in order to make the description concise, not all possible combinations of each technical feature in the above embodiments are described, however, as long as the combination of the technical features does not exist contradictory, it should be considered as the scope of the present disclosure.

Claims

1. A vertical cavity surface emitting laser, characterized by, The active region, the oxidation structure and the second mirror are sequentially stacked, the oxidation structure comprises at least one oxidation inhibition layer and at least one oxidation layer, the oxidation inhibition layer and the oxidation layer are stacked along the direction from the first mirror to the second mirror, and the oxidation layer is separated from the active region by at least one oxidation inhibition layer, and the oxidation inhibition layer is used for inhibiting the diffusion of oxygen elements; the oxidation inhibition layer has multiple layers, the oxidation layer has multiple layers, and the multiple layers of the oxidation inhibition layer and the multiple layers of the oxidation layer are alternately stacked; along the direction away from the active region, the thickness of each oxidation layer in the multiple layers of the oxidation layer gradually increases; the oxidation structure has a conduction region and an oxidation region outside the conduction region; each layer of the oxidation inhibition layer and each layer of the oxidation layer comprises a part in the conduction region and a part in the oxidation region.

2. The vertical cavity surface emitting laser according to claim 1, characterized in that The oxidation inhibition layer in the conduction region comprises a first base material and an oxidation inhibition element doped in the first base material, and the oxidation inhibition element comprises one or more of tellurium and zinc.

3. The vertical cavity surface emitting laser of claim 2, wherein, The oxidation inhibition layer closest to the first mirror is also doped with silicon, and the doping concentration of silicon is greater than the doping concentration of the oxidation inhibition element; The oxidation inhibition layer closest to the second mirror is also doped with carbon, and the doping concentration of carbon is greater than the doping concentration of the oxidation inhibition element.

4. The vertical cavity surface emitting laser according to claim 3, characterized in that The doping concentration of the oxidation inhibiting element in the oxidation inhibiting layer is in the range of 5 x 10 17 cm -3 below; and / or, The doping concentration of silicon element in the oxidation inhibition layer closest to the first mirror is 5 x 10 17 cm -3 ~1 x 10 20 cm -3 The doping concentration of carbon element in the oxidation inhibition layer closest to the second mirror is 5 x 10 17 cm -3 ~1 x 10 20 cm -3 .

5. The vertical cavity surface emitting laser according to any one of claims 2 to 4, characterized in that The oxidation layer in the conduction region comprises a second base material, and the first base material and the second base material are both compounds comprising group III elements and group V elements; wherein, The first base material and the second base material are compounds without aluminum, and the first base material and the second base material are the same; or, The first base material and the second base material are compounds containing aluminum, and the content of aluminum in the first base material is lower than the content of aluminum in the second base material.

6. The vertical cavity surface emitting laser according to any one of claims 2 to 4, characterized in that The doping concentration of the oxidation inhibition element at the center position of the oxidation inhibition layer is lower than the doping concentration of the oxidation inhibition element at the two side surfaces of the oxidation inhibition layer.

7. The vertical cavity surface emitting laser according to any one of claims 1 to 4, characterized in that The total thickness of all the oxidation inhibition layers is less than the total thickness of all the oxidation layers.

8. A method of manufacturing a vertical cavity surface emitting laser as claimed in any one of claims 1 to 7, characterized in that The method comprises the following steps: sequentially forming the first mirror and the active region on a substrate; depositing at least one inhibition precursor layer and at least one oxidation precursor layer on the active region; forming the second mirror on the inhibition precursor layer and the oxidation precursor layer; and oxidizing the inhibition precursor layer and the oxidation precursor layer located in the oxidation region to form the oxidation inhibition layer and the oxidation layer, respectively.

9. The method of manufacturing a vertical cavity surface emitting laser according to claim 8, wherein The inhibiting precursor layer and the oxidizing precursor layer are sequentially formed in the same deposition chamber, and the temperature of the deposition chamber is the first temperature when the deposition of the inhibiting precursor layer is completed; and before the formation of the oxidizing precursor layer after the formation of the inhibiting precursor layer, the temperature of the deposition chamber is first lowered to be lower than the first temperature, and then the temperature of the deposition chamber is raised to be the second temperature, which is higher than the first temperature by more than 50 ℃.

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