Film coating device and film coating adjustment method

Abstract

The embodiments of the present application relate to a coating device and a coating adjustment method. The coating device includes: a shell is provided with an air outlet, and a reaction chamber is formed inside the shell, and the air outlet is connected to the reaction chamber; an evaporation table is used to heat the film material and evaporate it, and the film material forms a gaseous film material after evaporation; the mounting assembly is used to mount the substrate, and the gaseous film material forms an airflow field and adheres to the surface of the substrate to form a thin film; the grid assembly includes a plurality of grids and a plurality of driving members, and the grid adjusts the opening and closing state under the action of the driving member; the driving member drives the grid to adjust the opening and closing state under the control of the controller, so as to adjust the distribution of the airflow field, and then adjust the uniformity of the thin film formed on the substrate surface. The coating device provided by the embodiments of the present application can adjust the uniformity of the thin film formed on the substrate surface, thereby improving the deposition uniformity on the substrate surface.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a coating device and a coating adjustment method. Background Art

[0002] In the existing semiconductor manufacturing process, evaporation coating technology occupies a very important position. Evaporation coating has the advantages of simple equipment operation, high film purity and fast speed. Existing evaporation coating mostly adopts point evaporation source evaporation. Due to the different distances from the point evaporation source to each position of the substrate, the flying distance of the film material particles between the evaporation source and the substrate is also different. Therefore, the probability of collision between the metal particles and the residual gas molecules in the vacuum chamber during the flight is also different, which inevitably causes problems such as uneven coating thickness and different film quality when evaporation coating is performed on a large area substrate.

[0003] At present, the uniformity of coating thickness is generally improved by rotating the substrate, increasing the number of film material evaporation sources, and adjusting the distance between the film material and the substrate, but the improvement in the uniformity of coating thickness is limited. Summary of the invention

[0004] In view of this, the embodiments of the present application provide a coating device and a coating adjustment method to solve the problems existing in the background technology.

[0005] In a first aspect, an embodiment of the present application provides a coating device, comprising:

[0006] A shell body, provided with an air outlet, a reaction chamber is formed inside the shell body, and the air outlet is connected to the reaction chamber;

[0007] An evaporation table, located in the reaction chamber and connected to the bottom of the shell, the evaporation table is used to heat the film material and evaporate it, and the film material forms a gaseous film material after evaporation;

[0008] A mounting assembly, located in the reaction chamber and connected to the top of the shell, the mounting assembly is used to mount a substrate, the gaseous film material forms an air flow field and adheres to the surface of the substrate to form a thin film;

[0009] A grille assembly connected to the housing and located at the air outlet, the grille assembly comprising a plurality of grilles and a plurality of driving members, each of the grilles being connected to one of the driving members, and the grilles adjusting the opening and closing states under the action of the driving members;

[0010] The controller is electrically connected to the driving member and controls the driving member to drive the grid to adjust the opening and closing state, so as to adjust the air flow field distribution, and further adjust the uniformity of the film formed on the surface of the substrate.

[0011] In the above technical solution, a plurality of grids are provided at the air outlet, and the controller controls the driving member to drive the grid to adjust its opening and closing state, thereby adjusting the air flow field distribution in the reaction chamber, and then adjusting the uniformity of the thin film formed on the substrate surface to improve the deposition uniformity on the substrate surface.

[0012] In conjunction with the first aspect of the present application, in an optional implementation manner, the installation component includes:

[0013] A connecting rod, one end of which is connected to the top of the shell;

[0014] The rotating member is connected to the other end of the connecting rod and can rotate relative to the connecting rod. The substrate is installed on the rotating member.

[0015] In the above technical solution, the rotating member can rotate relative to the connecting rod and then drive the substrate to rotate, so as to adjust the position and posture of the substrate in the reaction chamber and improve the deposition uniformity on the substrate surface.

[0016] In combination with the first aspect of the present application, in an optional embodiment, in a first direction, the air outlet has a first height, and there is a second height between the rotating member and the top of the shell, and the second height is less than or equal to 2 / 3 of the first height and greater than or equal to 1 / 3 of the first height.

[0017] In the above technical solution, the relationship between the first height and the second height within the above range can enhance the influence of the adjustment of the grid on the air flow field in the reaction chamber.

[0018] In combination with the first aspect of the present application, in an optional embodiment, in a direction perpendicular to the first direction, there is a first distance between the evaporation table and the gas outlet, there is a second distance between the connecting rod and the gas outlet, and the second distance plus the radius of the substrate is smaller than the first distance.

[0019] In the above technical solution, the relationship between the first distance and the second distance within the above range is conducive to the air flow field flowing through the space where the substrate is located.

[0020] In combination with the first aspect of the present application, in an optional implementation manner, the plurality of grilles are arranged in sequence from the top of the air outlet to the bottom of the air outlet in a first direction.

[0021] In the above technical solution, arranging a plurality of grids at the gas outlet can increase the adjustment range of the airflow field distribution in the reaction chamber, and further improve the coverage of the airflow field to the substrate.

[0022] In conjunction with the first aspect of the present application, in an optional implementation, the coating device further includes:

[0023] A weighing piece is installed on the evaporation table and is used to weigh the film material. The weighing piece is electrically connected to the controller.

[0024] In the above technical solution, the weighing element can obtain the weight information of the film material in real time to improve the accuracy of the grid adjustment.

[0025] In combination with the first aspect of the present application, in an optional embodiment, the housing is further provided with an air inlet, and the air inlet is connected to the reaction chamber; the coating device further includes:

[0026] The auxiliary gas input assembly is communicated with the gas inlet and is used for inputting the auxiliary gas from the gas inlet into the reaction chamber.

[0027] In the above technical solution, inputting auxiliary gas from the gas inlet can increase the flow velocity of the gas flow field in the reaction chamber, thereby improving the substrate coating efficiency.

[0028] In combination with the first aspect of the present application, in an optional implementation manner, the air inlet is located on a side of the evaporation table away from the air outlet.

[0029] In the above technical solution, the air inlet is located on the side of the evaporation table away from the air outlet, which can increase the distribution range of the air flow field in the reaction chamber.

[0030] In combination with the first aspect of the present application, in an optional embodiment, the gas outlet is connected to a vacuum component, and the vacuum component includes a vacuum pump and an outlet pipe, one end of the outlet pipe is connected to the vacuum pump, and the other end is connected to the gas outlet, and the gas in the reaction chamber is discharged from the gas outlet under the action of the vacuum pump.

[0031] In the above technical solution, the speed and pressure of the airflow field in the reaction chamber can be changed during the process of the vacuum pump extracting the gas in the reaction chamber, and the distribution of the airflow field in the reaction chamber can be adjusted by adjusting the opening and closing states of multiple grids to improve the uniformity of deposition on the substrate surface.

[0032] In a second aspect, an embodiment of the present application provides a coating adjustment method of a coating device according to any one of the first aspects, comprising:

[0033] Acquiring a plurality of initial parameters of the reaction chamber in an initial state, wherein the plurality of initial parameters at least include chamber pressure, chamber temperature, film material mass, auxiliary gas flow rate, and film material evaporation amount per unit time;

[0034] The simulation system of the controller obtains the variance value of the concentration of the reactant at multiple reference points provided on the substrate based on the multiple initial parameters;

[0035] Determine the target opening and closing states of the plurality of grids corresponding to the minimum value among the plurality of variance values;

[0036] The controller controls the driving member to drive the grille to adjust the opening and closing state, and adjusts the opening and closing state of the grille to the target opening and closing state.

[0037] In the above technical scheme, the distribution of the gas flow field, i.e., the flow trajectory of the gas film material, is controlled by adjusting the opening and closing state of the grid during the movement of the gas film material, thereby improving the uniformity of the thin film on the substrate surface; this coating adjustment method can greatly eliminate the negative impact of the gas flow in the reaction chamber on the uniformity of the thin film, and improve the uniformity of the film thickness.

[0038] The coating device and coating adjustment method provided in the embodiments of the present application have the following beneficial effects:

[0039] (1) The coating device uses a controller to control the opening and closing state of the driving member to drive the grid to adjust the gas flow field distribution in the reaction chamber, that is, adjust the flow trajectory of the gas in the reaction chamber, and then adjust the uniformity of the thin film formed on the substrate surface, thereby improving the deposition uniformity on the substrate surface.

[0040] (2) The air inlet is located on the side of the evaporation table away from the air outlet, which can increase the distribution range of the air flow field in the reaction chamber, thereby greatly reducing the situation where the air flow field cannot flow through the substrate.

[0041] (3) The film material evaporates from the heat source, and the gas film material adheres to the substrate surface through diffusion and flow to form a thin film. During the movement of the gas film material, the distribution of the gas flow field, that is, the flow trajectory of the gas film material, is controlled by adjusting the opening and closing state of the grid, thereby improving the uniformity of the thin film on the substrate surface. This coating adjustment method can greatly eliminate the negative impact of the gas flow in the reaction chamber on the uniformity of the thin film, and improve the uniformity of the film thickness.

[0042] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0044] Figure 1 This is a segmented diagram of the fluid flow state in the process chamber under different conditions in the embodiment of the present application;

[0045] Figure 2 A schematic diagram of the planar structure of a coating device provided in an embodiment of the present application;

[0046] Figure 3 A schematic diagram of the three-dimensional structure of a coating device provided in an embodiment of the present application;

[0047] Figure 4 A schematic diagram of the planar structure of a coating device provided in a specific embodiment of the present application;

[0048] Figure 5 A schematic diagram of the planar structure of a coating device provided in another specific embodiment of the present application;

[0049] Figure 6 A schematic diagram of a process flow of a coating adjustment method provided in an embodiment of the present application;

[0050] Figure 7 A schematic flow chart of a coating adjustment method provided in a specific embodiment of the present application.

[0051] Reference numerals:

[0052] a. Film material; b. Substrate;

[0053] 100, coating device; 10, housing; 110, air outlet; 120, reaction chamber; 130, air inlet;

[0054] 20. Evaporation table; 210. Heating element; 220. Heat source;

[0055] 30. Mounting assembly; 310. Connecting rod; 320. Rotating member;

[0056] 40. grille assembly; 410. grille;

[0057] 50. Vacuum assembly; 510. Vacuum pump; 520. Export pipeline. DETAILED DESCRIPTION

[0058] In order to make the technical solutions and beneficial effects of the present invention more clearly understandable, the following is a detailed description by listing specific embodiments. The drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly show the details of the local features; unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which this application belongs.

[0059] In the description of the present invention, terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "height", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of simplified description of the present invention, and do not indicate that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and should not be understood as a limitation to the present invention.

[0060] In the present invention, the terms "first" and "second" are only used for the purpose of clear description and cannot be understood as the relative importance of the indicated features or the number of the indicated technical features. Therefore, the features defined as "first" and "second" can explicitly include at least one of the features. In the description of the present invention, "multiple" means at least two, such as two, three, etc.; "several" means at least one, such as one, two, three, etc., unless otherwise clearly and specifically defined.

[0061] In the present invention, unless otherwise clearly defined, the terms "install", "connect", "connect", "fix", "set", etc. should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0062] In the present invention, unless otherwise clearly defined, a first feature being “on”, “above”, “above”, “below”, “below”, “below” or “below” a second feature may mean that the first feature is in direct contact with the second feature, or the first feature and the second feature are in indirect contact with each other through an intermediate medium. Moreover, a first feature being “on”, “above” or “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than the horizontal height of the second feature. A first feature being “below”, “below” or “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the horizontal height of the first feature is lower than the horizontal height of the second feature.

[0063] In the prior art, the uniformity of film thickness is generally improved by rotating the substrate, increasing the number of film material evaporation sources, and adjusting the distance between the substrate and the film material. However, the above technologies do not consider the effect of gas fluidity on the uniformity of film deposition.

[0064] Specifically, the Knudsen number is generally used to determine whether a fluid is suitable for the continuum hypothesis, that is, to determine whether the fluid is transported in a molecular flow state or in a continuous medium flow. Among them, the calculation formula of the Knudsen number Kn is:

[0065] ; Formula 1

[0066] In Formula 1, λ is the mean free path of the molecules; L is the geometric characteristic length. The characteristic length refers to the length scale that is representative of an object or system in the flow field. In the evaporation coating process, it can be regarded as the size of the reaction chamber.

[0067] Assuming that gas molecules are spheres with a molecular diameter of d, the mean free path of the molecules can be estimated by the following formula:

[0068] ; Formula 2

[0069] Then substituting Formula 2 into Formula 1 gives:

[0070] ; Formula 3

[0071] In Formulas 2 and 3, K b is the Boltzmann constant (1.38×10 -23 J / K); d is the gas molecular diameter; p is the pressure.

[0072] When Kn < 0.01, the flow is a continuous flow and the N-S equation (Navier-Stokes equation, the equation for continuous fluid flow) holds; when 0.01 < Kn < 0.1, the flow is a slip flow and the N-S equation is still applicable, but only special boundary conditions need to be applied; when 0.1 < Kn < 10, the flow is a transitional flow, the free molecular flow plays a dominant role, and the continuous flow still plays a certain role; when 10 < Kn, the flow is a free molecular flow and the N-S equation does not hold.

[0073] Oxide evaporation coating is generally carried out at a pressure of about 10 -2 ~10 -3 Pa. With the increasing demand for the size of the workpiece to be coated, the size of the coating chamber also increases accordingly. For example, when coating yttrium oxide on a 300 mm disk workpiece, the chamber height is generally between 1 and 2 m. As Figure 1 shown, the fluid flow states in the process chamber are different under different conditions, and the fluid flow state can be judged by calculating the Knudsen number or the Knudsen number line segmentation diagram.

[0074] In the oxide evaporation coating process with low vacuum and large-size chamber, there is only a small amount of molecular flow in the chamber, and most of the flow state is transition flow, slip flow, or even local continuous flow. In these cases, the flow trajectory of the gas will have a great impact on the performance of thin film deposition. In the evaporation coating of other plating materials, Kn can be calculated according to the above formula to determine the flow state.

[0075] Based on this, an embodiment of the present application provides a coating device 100, which uses a controller to control a driving member to drive the grid 410 to adjust the opening and closing state, so as to further adjust the airflow field distribution in the reaction chamber 120, that is, adjust the flow trajectory of the gas in the reaction chamber 120, and then adjust the uniformity of the thin film formed on the surface of the substrate b.

[0076] Specifically, Figure 2 and Figure 3 As shown, the coating device 100 includes a housing 10, an evaporation table 20, a mounting assembly 30, a grid assembly 40 and a controller (not shown in the figure).

[0077] The housing 10 is provided with an air outlet 110 , and a reaction chamber 120 is formed inside the housing 10 . The air outlet 110 is connected to the reaction chamber 120 .

[0078] The evaporation table 20 is located in the reaction chamber 120 and connected to the bottom of the housing 10. The evaporation table 20 is used to heat the film material a and evaporate the solid film material a into a gaseous film material. As an example, the film material a is Y2O3, but it is not limited thereto.

[0079] The mounting assembly 30 is located in the reaction chamber 120 and connected to the top of the housing 10. The mounting assembly 30 is used to mount the substrate b. The gaseous film material formed after the film material a evaporates moves upward and forms an air flow field. When the gaseous film material in the air flow field contacts the substrate b, it can adhere to the surface of the substrate b and form a thin film.

[0080] The grille assembly 40 is connected to the housing 10 and is located at the air outlet 110. The grille assembly 40 includes a plurality of grilles 410 and a plurality of driving members. Each grille 410 is connected to a driving member. The grille 410 adjusts the opening and closing state under the action of the driving member. The opening and closing state of the grille includes opening, closing and opening at different angles of the grille. It can be understood that the driving member can not only drive the grille to close and open, but also drive the grille to adjust the opening angle.

[0081] As an example, the driving member is a rotary motor, which can be connected to the housing 10 and located at the end of the grille 410, but is certainly not limited thereto.

[0082] The driving member is electrically connected to the controller, and drives the opening and closing state of the grid 410 under the control of the controller. Under the control of the controller, one driving member can drive one grid 410 to adjust the opening and closing state, or multiple driving members can drive multiple grids 410 to adjust the opening and closing state, so as to adjust the airflow field distribution, and further adjust the uniformity of the film formed on the surface of the substrate b.

[0083] It can be understood that the film material a evaporates after heating to form a gaseous film material, and the gaseous film material diffuses and flows from the evaporation table 20 to the gas outlet 110, so that an airflow field is formed in the reaction chamber 120, and the airflow field flows through the substrate b, and part of the gaseous film material adheres to the surface of the substrate b, and part of the gaseous film material is discharged from the gas outlet 110, and part of the gaseous film material diffuses to other spaces in the reaction chamber 120. The distribution of the airflow field is adjusted by adjusting the opening and closing states of the multiple grids 410, and then the uniformity of the thin film formed by the gaseous film material adhering to the substrate b in the airflow field is adjusted; at the same time, the negative impact of the gas flow in the reaction chamber 120 on the uniformity of the thin film can be eliminated to a great extent, and the uniformity of the thin film on the surface of the substrate b can be further improved.

[0084] Preferably, the gas outlet 110 is disposed on the side of the shell 10 , and the top of the gas outlet 110 is the top of the shell 10 , which can improve the space utilization between the substrate b and the evaporation table 20 , and further improve the space utilization of the entire reaction chamber 120 .

[0085] like Figure 4 As shown, the mounting assembly 30 includes a connecting rod 310 and a rotating member 320, one end of the connecting rod 310 is connected to the top of the housing 10, and the other end of the connecting rod 310 extends into the space of the reaction chamber 120 and is connected to the rotating member 320, the rotating member 320 can rotate relative to the connecting rod 310, and the substrate b is mounted on the rotating member 320. It can be understood that the gas flow field formed by the gas film material a can contact the substrate b during the flow process and adhere to the substrate b to form a thin film.

[0086] Furthermore, the rotating member 320 can rotate relative to the connecting rod 310 and can also be adjusted in angle to adjust the position and posture of the substrate b mounted on the rotating member 320, and further adjust the relative position of the substrate b and the airflow field.

[0087] like Figure 2 and Figure 5 As shown, in the first direction, Figure 5 In the direction of arrow s1 shown in FIG. 1 , the air outlet 110 has a first height, that is, Figure 5 h1 shown in the figure, there is a second height between the rotating member 320 and the top of the housing 10, that is, Figure 5 In the h2 shown in FIG, h2 is less than or equal to 2 / 3 h1, and greater than or equal to 1 / 3 h1.

[0088] When h2 is greater than 2 / 3 h1 or h2 is less than 1 / 3 h1, the influence of the opening and closing of the grid 410 on the uniformity of the thin film on the surface of the substrate b will be greatly reduced.

[0089] Preferably, when h2 is close to 1 / 2h1, in the first direction, the substrate b is located at the middle position of the gas outlet 110, and the distribution of the air flow field has the largest adjustment range, further improving the uniformity of the film on the surface of the substrate b.

[0090] Conversely, when substrate b is close to the top of the outlet 110 or the bottom of the outlet 110, the opening and closing of the grille 410 away from the substrate b has less effect on the uniformity of the thin film on the surface of substrate b, and the number of grilles 410 close to the substrate b is relatively reduced, and the adjustable range becomes smaller, which affects the adjustment of the uniformity of the thin film on the surface of substrate b.

[0091] In the second direction Figure 5 In the direction of arrow s2 shown in FIG. 1 , the second direction is perpendicular to the first direction, and the evaporation table 20 and the gas outlet 110 have a first distance, that is, Figure 5 L1 shown in FIG. 1 , the connecting rod 310 and the air outlet 110 have a second distance, that is, Figure 5 L2 is shown in the figure, the radius of substrate b is r, and L2 plus r is less than L1, which is conducive to the airflow field flowing through the space where substrate b is located, and is conducive to the gaseous film material in the airflow field adhering to the surface of substrate b. Of course, when L2 plus r is greater than L1, the airflow field flows through part of the substrate b, affecting the film effect of substrate b.

[0092] In an alternative embodiment, if Figure 3 As shown, the housing 10 is further provided with an air inlet 130, and the air inlet 130 is connected to the reaction chamber 120. The coating device 100 further includes an auxiliary gas input component (not shown in the figure), which is connected to the air inlet 130, and the auxiliary gas input component is used to input the auxiliary gas from the air inlet 130 into the reaction chamber 120. The auxiliary gas can be oxygen as a reaction gas, or the auxiliary gas can also be argon as a protective gas.

[0093] Furthermore, the air inlet 130 is located on a side of the evaporation table 20 away from the air outlet 110. This can increase the distribution range of the air flow field in the reaction chamber 120, thereby greatly reducing the situation where the air flow field cannot flow through the substrate b.

[0094] like Figure 3 As shown, the coating device 100 also includes a vacuum component 50, which includes a vacuum pump 510 and an outlet pipe 520. One end of the outlet pipe 520 is connected to the vacuum pump 510, and the other end of the outlet pipe 520 is connected to the gas outlet 110. The gas in the reaction chamber 120 is discharged from the gas outlet 110 under the action of the vacuum pump 510.

[0095] The vacuum pump 510 is electrically connected to the controller, and under the control of the controller, the vacuum pump 510 is used to adjust the vacuum degree in the reaction chamber 120. The vacuum pump 510 can change the speed and pressure of the gas flow field in the reaction chamber 120 during the process of extracting gas in the reaction chamber 120, and then adjust the opening and closing of the plurality of grids 410 to further adjust the distribution of the gas flow field in the reaction chamber 120, so as to improve the uniformity of deposition on the surface of the substrate b.

[0096] In addition, the extraction of gas in the reaction chamber 120 by the vacuum pump 510 and the input of gas from the gas inlet 130 by the auxiliary gas input component can increase the speed of the gas flow field in the reaction chamber 120 and further improve the deposition efficiency of the substrate b; combined with the opening and closing adjustment of multiple grids 410, the deposition efficiency can be guaranteed while improving the deposition uniformity.

[0097] In one embodiment, the outlet pipe 520 is directly connected to the housing 10 and communicates with the air outlet 110 .

[0098] In another embodiment, Figures 2 to 5 The housing 10 shown in FIG. 1 extends along the second direction to form an exhaust chamber, the gas outlet 110 can connect the exhaust chamber with the reaction chamber 120, and the outlet pipe 520 connects the exhaust chamber. The exhaust chamber can form a buffer for the gas exhausted from the reaction chamber 120, greatly reducing the speed of the air flow field affected by the narrow outlet pipe 520.

[0099] It should be noted that the first height of the air outlet 110 in the first direction is set based on factors such as the size of the housing 10 and the size of the substrate b, and is not specifically limited in the embodiment of the present application.

[0100] Preferably, the plurality of grids 410 are arranged in a first direction, that is, Figure 5 110 are arranged in sequence from the top of the gas outlet 110 to the bottom of the gas outlet 110 in the direction of the arrow s1 shown in FIG. It can be understood that when all the grilles 410 at the gas outlet 110 are closed, the gas in the reaction chamber 120 cannot be discharged from the gas outlet 110. Arranging multiple grilles 410 at the gas outlet 110 can increase the adjustment range of the gas flow field distribution in the reaction chamber 120, and further improve the coverage of the gas flow field to the substrate b.

[0101] The evaporation table 20 includes a heating element 210 and a heat source 220. Under the action of the heating element 210, the heat source 220 generates heat and can evaporate the film material a on the heat source 220 into a gaseous film material. As an example, the heating element 210 is a resistance wire, and heating is performed by the resistance wire, but it is not limited to this.

[0102] The coating device 100 further includes a weighing element (not shown in the figure), which is installed on the evaporation table 20 and is used to weigh the film material a. The weighing element is electrically connected to the controller. The weighing element is installed on the surface of the heating element 210 to obtain the weight of the film material a on the heating element 210 in real time. As an example, the weighing element is a pressure sensor, but it is not limited to this.

[0103] Optionally, the coating device 100 further includes a temperature sensor, a pressure detector, a flow detector, etc. The temperature sensor, the pressure detector, and the flow detector are all electrically connected to the controller, and the temperature sensor, the pressure detector, and the flow detector feed back their respective detection values ​​to the controller. The temperature sensor is used to detect the temperature in the reaction chamber 120 in real time, the pressure detector is used to detect the pressure in the reaction chamber 120, and the flow detector is used to detect the auxiliary gas flow, etc.

[0104] Furthermore, there may be multiple temperature sensors, pressure sensors, and flow rate detectors, and they may be distributed at different locations of the reaction chamber 120 , so as to improve the detection accuracy based on the confirmation of multiple detection values.

[0105] The present application also provides a coating adjustment method based on the above coating device, such as Figure 6 As shown, the following steps are included:

[0106] S1. Acquire a plurality of initial parameters of the reaction chamber in an initial state, wherein the plurality of initial parameters at least include chamber pressure, chamber temperature, film material mass, auxiliary gas flow rate, and film material evaporation amount per unit time.

[0107] S2. The simulation system of the controller confirms and obtains the variance value of the reactant concentration at multiple reference points set on the substrate based on the multiple initial parameters obtained in step S1.

[0108] The multiple reference points provided on the substrate can be set according to specific circumstances. As an example, they are set in advance in the form of coordinates, which is not limited in the embodiments of the present application.

[0109] The simulation system of the controller is used as an example: rarefied gas dynamics calculation is adopted. Rarefied gas dynamics uses the method of molecular kinetic theory to analyze the effect of the discrete structure of gas molecules according to the different degrees of gas rarefaction in the flow problem. As another example, the basic equation of molecular kinetic theory is the Boltzmann equation, which is also the basic equation of rarefied gas dynamics. The Boltzmann equation is an equation that describes the law of change of the molecular motion velocity distribution function. Of course, the simulation system of the controller is not limited to this.

[0110] S3, confirming the minimum value among the multiple variance values ​​in step S2, and obtaining the target opening and closing states of the multiple grids corresponding to the minimum variance value.

[0111] In step S2, the simulation system of the controller can obtain the variance values ​​of the concentrations of the reactants at multiple reference points on the multiple groups of substrates. The minimum value among the multiple variance values ​​corresponds to the concentrations of the reactants at multiple reference points on the substrate that are closest, that is, the uniformity is the best. The opening and closing state of the grid corresponding to the minimum variance value is the optimal opening and closing state, that is, the target opening and closing state. The optimal opening and closing state can be understood as: in this state, the gaseous film material in the air flow field in the reaction chamber can be uniformly attached to the surface of the substrate and form a thin film.

[0112] S4. Based on the opening and closing states of the multiple grilles obtained in step S3, the controller controls the driving member to drive the grilles to adjust the opening and closing states, and adjusts the opening and closing states of the grilles to the target opening and closing states, thereby adjusting the airflow field distribution and the uniformity of the thin film formed on the substrate surface.

[0113] Based on the optimal opening and closing states of the multiple grilles obtained in step S3, the controller controls one driving member to drive one grille to adjust the opening and closing state, or controls multiple driving members to drive multiple grilles to adjust the opening and closing states.

[0114] In step S1, the chamber pressure, chamber temperature, film material mass and auxiliary gas flow rate can all be detected by the detector. The evaporation amount of the film material per unit time = the weight difference of the film material at two time points / (the interval time between the two time points x the molar mass of the film material).

[0115] In step S1, the initial parameters also include the grille state. For example, there are n grilles in total, and the state when all the grilles are open is S0. Starting from the top of the air outlet, the grilles are closed one by one, and the corresponding states are S1, S2, S3...Sn-1.

[0116] In step S1 , the initial parameters also include the first height, the second height, the first distance, the second distance, the radius of the substrate and other parameters mentioned above.

[0117] It should be noted that during the deposition of the film material on the substrate by evaporation, various parameters in the reaction chamber are changing. For example, the mass of the film material will gradually decrease, thereby affecting the evaporation amount of the film material per unit time.

[0118] Based on this, Figure 7 As shown, the coating adjustment method provided in the embodiment of the present application also includes:

[0119] S1`, after a preset time, a plurality of current parameters in the reaction chamber are obtained, wherein the plurality of current parameters at least include chamber pressure, chamber temperature, film material quality, auxiliary gas flow rate and evaporation amount of film material per unit time.

[0120] In step S1', the current parameters also include the first height, the second height, the first distance, the second distance and the radius of the substrate mentioned above.

[0121] S2', the simulation system of the controller determines the variance value of the concentration of the reactant at multiple reference points on the substrate based on the multiple current parameters obtained in step S1'.

[0122] S3', confirming the minimum value among the multiple variance values ​​in step S2', and obtaining the opening and closing states of the multiple grids corresponding to the minimum variance value.

[0123] S4', based on the opening and closing states of the multiple grids obtained in step S3', the controller controls the driving member to drive the grids to adjust the opening and closing states, so as to adjust the airflow field distribution, and further adjust the uniformity of the thin film formed on the substrate surface.

[0124] Repeat steps S1' to S4' until the coating is completed.

[0125] In the above coating adjustment method, the film material evaporates from the heat source, and the gas film material adheres to the substrate surface through diffusion and flow to form a thin film. During the movement of the gas film material, the distribution of the gas flow field, that is, the flow trajectory of the gas film material, is controlled by adjusting the opening and closing of the grid, thereby improving the uniformity of the thin film on the substrate surface; the coating adjustment method can greatly eliminate the negative impact of the gas flow in the reaction chamber on the uniformity of the thin film, and improve the uniformity of the film thickness.

[0126] It should be understood that the above embodiments are exemplary and are not intended to include all possible implementations included in the claims. Various modifications and changes may be made on the basis of the above embodiments without departing from the scope of the present disclosure. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form other embodiments of the present application that may not be explicitly described. Therefore, the above embodiments only express several implementations of the present application and do not limit the scope of protection of the patent of this application.

Claims

1. A coating device, characterized in that: include: A shell body, provided with an air outlet, a reaction chamber is formed inside the shell body, and the air outlet is connected to the reaction chamber; An evaporation table, located in the reaction chamber and connected to the bottom of the shell, the evaporation table is used to heat the film material and evaporate it, and the film material forms a gaseous film material after evaporation; A mounting assembly, located in the reaction chamber and connected to the top of the shell, the mounting assembly is used to mount a substrate, the gaseous film material forms an air flow field and adheres to the surface of the substrate to form a thin film; A grille assembly connected to the housing and located at the air outlet, the grille assembly comprising a plurality of grilles and a plurality of driving members, each of the grilles being connected to one of the driving members, and the grilles adjusting the opening and closing states under the action of the driving members; A controller, electrically connected to the driving member, and controlling the driving member to drive the grid to adjust the opening and closing state, so as to adjust the air flow field distribution, and further adjust the uniformity of the thin film formed on the surface of the substrate; The coating adjustment method of the coating device comprises: Acquiring a plurality of initial parameters of the reaction chamber in an initial state, wherein the plurality of initial parameters at least include chamber pressure, chamber temperature, film material mass, auxiliary gas flow rate, and film material evaporation amount per unit time; The simulation system of the controller obtains the variance value of the concentration of the reactant at multiple reference points provided on the substrate based on the multiple initial parameters; Determine the target opening and closing states of the plurality of grids corresponding to the minimum value among the plurality of variance values; The controller controls the driving member to drive the grille to adjust the opening and closing state, and adjusts the opening and closing state of the grille to the target opening and closing state.

2. The coating device according to claim 1, characterized in that: The installation assembly includes: A connecting rod, one end of which is connected to the top of the shell; The rotating member is connected to the other end of the connecting rod and can rotate relative to the connecting rod. The substrate is installed on the rotating member.

3. The coating device according to claim 2, characterized in that: In the first direction, the air outlet has a first height, and the rotating member and the top of the shell have a second height, and the second height is less than or equal to 2 / 3 of the first height and greater than or equal to 1 / 3 of the first height.

4. The coating device according to claim 2 or 3, characterized in that: In a direction perpendicular to the first direction, there is a first distance between the evaporation table and the gas outlet, there is a second distance between the connecting rod and the gas outlet, and the second distance plus the radius of the substrate is smaller than the first distance.

5. The coating device according to claim 1, characterized in that: The plurality of grilles are arranged in sequence from the top of the air outlet to the bottom of the air outlet in a first direction.

6. The coating device according to claim 1, characterized in that: Also includes: A weighing piece is installed on the evaporation table and is used to weigh the film material. The weighing piece is electrically connected to the controller.

7. The coating device according to claim 1, characterized in that: The shell is also provided with an air inlet, and the air inlet is connected to the reaction chamber; the coating device also includes: The auxiliary gas input assembly is communicated with the gas inlet and is used for inputting the auxiliary gas from the gas inlet into the reaction chamber.

8. The coating device according to claim 7, characterized in that: The air inlet is located at a side of the evaporation table away from the air outlet.

9. The coating device according to claim 1 or 7, characterized in that: The gas outlet is connected to a vacuum component, which includes a vacuum pump and an outlet pipeline. One end of the outlet pipeline is connected to the vacuum pump, and the other end is connected to the gas outlet. The gas in the reaction chamber is discharged from the gas outlet under the action of the vacuum pump.

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