A dynamic adaptive evaporation system and evaporation method

Abstract

The present invention relates to a dynamic adaptive evaporation system and method. The evaporation system includes a vacuum chamber, an evaporation source, and a substrate carrier. The vacuum chamber includes an evaporation zone, a transition zone, and a deposition zone, which are sequentially connected from bottom to top. A first partition is provided between the evaporation zone and the transition zone, the center of the first partition being ventilated and provided with a first partitioning device. A second partition is provided between the transition zone and the deposition zone, the center of the second partition being ventilated and provided with a second partitioning device. An evaporation source is provided in the middle of the evaporation zone. A cooling chamber is arranged around the periphery of the transition zone, the cooling chamber being provided with a condensation ring and a cryogenic trap. A substrate carrier is provided in the upper center of the deposition zone. The evaporation method comprises the steps of establishing a dynamic pressure-stratified vacuum environment, preheating, and evaporation. The evaporation system can dynamically pressure-stratify the chamber using an electromagnetic barrier with an array of charged micropores. Through pressure gradient design, the system can isolate and regulate evaporated substances and byproducts in real time, resulting in low pressure fluctuations, high coating uniformity, and high material utilization.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite batteries, and in particular to a dynamic adaptive evaporation system and an evaporation method. Background Art

[0002] Perovskite solar cells have garnered widespread attention in recent years due to their exceptional photovoltaic conversion efficiency (single-junction efficiency exceeding 25%) and potential for low cost. While traditional solution-based methods offer simplicity, they suffer from issues such as solvent residue, environmental pollution, and film non-uniformity. Vacuum vapor deposition, by contrast, offers the advantages of being solvent-free, producing dense, uniform films, and facilitating large-scale, continuous production. However, existing vacuum evaporation equipment presents the following challenges when depositing highly volatile organic materials (such as FAI and MAI):

[0003] 1. Significant pressure fluctuation: FAI has a high evaporation rate when evaporating, causing the cavity pressure to fluctuate from 10 -6 Pa rises rapidly to 10 -2 Pa, with fluctuations of up to ±50%, affecting deposition stability and sample loading;

[0004] 2. Low material utilization: Traditional evaporation source design (such as tungsten boat, crucible) leads to disordered vapor diffusion, and the material utilization rate is only about 30%;

[0005] 3. Serious decomposition phenomenon: High temperature (180-200℃) evaporation can easily decompose FAI, MAI, etc. into volatile by-products (such as HI), reducing the quality of the film;

[0006] 4. Unstable thickness detection: The quartz crystal oscillator (QCM) is contaminated by FAI adhesion, the frequency decays rapidly, the measurement error exceeds ±20%, and the crystal oscillator frequency decays rapidly.

[0007] Existing technologies often increase vacuum levels, optimize heating temperatures, adjust molecular flows through mechanical valves or fixed-aperture baffles, or employ static parameter control. However, these methods struggle to dynamically adapt to the transient volatility of FAI and are unable to effectively isolate byproducts. These measures struggle to simultaneously address pressure control, material utilization, and long-term stable monitoring. Furthermore, traditional equipment lacks real-time data feedback and intelligent regulation, and process parameter adjustments rely on empirical experience, making it difficult to meet the requirements of industrial large-scale production. Existing literature (e.g., "Research Progress in Vacuum Evaporation Perovskite Solar Cell Device Processing") indicates that multi-level pressure stratification and precise dynamic control of equipment are crucial for improving product consistency and stability.

[0008] Chinese patent CN117512522A discloses an evaporation device and process. The device utilizes a funnel-shaped structure, allowing the object to be evaporated to pass from the lower evaporation chamber through a buffer chamber to a heating chamber, where it adheres to the object. A large number of filler balls are stacked within the buffer chamber to form a channel for vapor dispersion, ensuring more uniform vapor distribution within the buffer chamber. However, this method is not effective in removing byproducts, which can lead to product quality issues.

[0009] Therefore, it is necessary to improve the equipment structure and coating method to solve the above problems. Summary of the Invention

[0010] The main purpose of the present invention is to provide a dynamic adaptive evaporation system that can dynamically pressure-stratify the cavity, use an electromagnetic barrier with a charged micropore array, and isolate and regulate the evaporated material and by-products in real time through pressure gradient design.

[0011] The present invention achieves the above-mentioned purpose through the following technical scheme: a dynamic adaptive evaporation system, comprising a vacuum chamber, an evaporation source and a substrate carrier, the vacuum chamber comprising an evaporation zone, a transition zone and a deposition zone connected in sequence from bottom to top, a first partition plate is provided between the evaporation zone and the transition zone, the center of the first partition plate is ventilated and provided with a first partition device, a second partition plate is provided between the transition zone and the deposition zone, the center of the second partition plate is ventilated and provided with a second partition device, an evaporation source is provided in the middle of the evaporation zone, a cooling chamber is arranged around the periphery of the transition zone, a condensation ring for cooling the transition zone and a deep cold trap for cooling the deposition zone are provided in the cooling chamber, a substrate carrier is provided in the upper center of the deposition zone, a first exhaust port connected to a first exhaust pump is provided on the side wall of the evaporation zone, a second exhaust port connected to a second exhaust pump is provided on the side wall of the transition zone, and a third exhaust port connected to a third exhaust pump is provided on the side wall of the deposition zone, the suction forces of the first exhaust pump, the second exhaust pump and the third exhaust pump are increased in sequence.

[0012] Specifically, a film thickness monitoring device is provided in the deposition area and is located below the substrate carrier.

[0013] Furthermore, the film thickness monitoring device includes a plurality of crystal oscillator detectors arranged in a circular array around a vertical axis, an anti-plating baffle rotating around the vertical axis, and a cleaning head moving with the anti-plating baffle. A notch is provided on the anti-plating baffle to allow only one crystal oscillator detector to be exposed. When the notch is aligned with one crystal oscillator detector, the cleaning head is aligned with another crystal oscillator detector.

[0014] Specifically, the cleaning head is a plasma gas nozzle.

[0015] Specifically, the first partition device and the second partition device are electromagnetic barriers, which are made of a porous molybdenum substrate with a thickness of 2 to 5 mm. A micropore array with a diameter of 0.1 to 1 mm is distributed on the porous molybdenum substrate, and the porosity is 20% to 80%.

[0016] Another main purpose of the present invention is to provide an evaporation method that can utilize the above dynamic adaptive evaporation system to obtain a perovskite organic halide material deposition film with high coating uniformity, small thickness error, and high material utilization.

[0017] A vapor deposition method using the vapor deposition system, comprising the following steps:

[0018] S1. Establishing a dynamic pressure stratified vacuum environment: The working pressure of the evaporation zone is controlled at 10 -3 ~10 -2 Pa, the working pressure of the transition zone is controlled at 10 -4 ~10 -3 Pa, the condensation ring temperature is 10~20℃, and the working pressure of the deposition area is controlled at 10 -6 ~10 -5 Pa, the temperature of the deep cold trap is -50~-100℃;

[0019] S2. Preheating: heating the evaporation material to 75-85°C in the evaporation zone to remove impurities and moisture;

[0020] S3, evaporation: heating the evaporation material to 125-135° C. in the evaporation zone, monitoring the film thickness in real time until the target film thickness is reached, and completing the evaporation.

[0021] Specifically, the temperature of the evaporation source is maintained at 125-135°C, the heating cycle frequency of the pulse heater is 0.2-0.5 Hz, and the duty cycle is 30%-50%; the power of the plasma generator is 5-30 W, and inert gas is used as the shielding gas.

[0022] Specifically, an electromagnetic funnel coil is provided below the first partition device, the lower diameter of the electromagnetic funnel coil is larger than the upper diameter, the lower diameter of the electromagnetic funnel coil is not less than the diameter of the evaporation source, the upper diameter of the electromagnetic funnel coil is equal to the diameter of the first partition device, the electromagnetic funnel coil has a diameter of 2-5 mm, the number of turns is 10-20, and the coil spacing is 1-2 cm.

[0023] Furthermore, the temperature of the evaporation source is maintained at 125-135°C, the heating cycle frequency of the pulse heater is 0.2-0.5 Hz, and the duty cycle is 30%-50%; the power of the plasma generator is 5-30 W, and an inert gas is used as the shielding gas.

[0024] Specifically, the evaporation source includes a porous crucible, a plasma generator located above the porous crucible, and a pulse heater located below the porous crucible.

[0025] Furthermore, the electromagnetic funnel coil has an operating current of 1-5A and generates a gradient magnetic field with a field strength of 0.1-0.5T.

[0026] The beneficial effects of the technical solution of the present invention are:

[0027] 1. The dynamic pressure stratification chamber adopts an electromagnetic barrier with a charged micropore array. Through the pressure gradient design, it can isolate and regulate the evaporated substances and by-products in real time. The pressure fluctuation is as low as ±5%, the coating uniformity is ±2%, and the material utilization rate is as high as 80%;

[0028] 2. Plasma-assisted pulse evaporation source combines super plasma technology and pulse heating to achieve low-temperature, high-efficiency and uniform material volatilization, reduce decomposition, and the decomposition rate is as low as 4%, and the HI concentration is <10 -5 mbar;

[0029] 3. Adaptive film thickness monitoring device and online self-cleaning crystal oscillator detector allow the crystal oscillator detector to be reused to extend its life and reduce the frequency of cavity replacement. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a cross-sectional view of a dynamic adaptive evaporation system in an embodiment;

[0031] Figure 2 It is a three-dimensional diagram of the film thickness monitoring device.

[0032] The numbers in the figure represent:

[0033] 1-vacuum chamber, 11a-evaporation zone, 11b-transition zone, 11c-deposition zone, 11d-cooling chamber, 12a-first partition, 12b-second partition, 13a-first partition device, 13b-second partition device, 14a-first exhaust port, 14b-second exhaust port, 14c-third exhaust port;

[0034] 2-evaporation source, 21-porous crucible, 22-plasma generator, 23-pulse heater;

[0035] 3- substrate carrier;

[0036] 4-film thickness monitoring device, 41-crystal oscillator detector, 42-anti-plating baffle, 421-notch, 43-cleaning head;

[0037] 5-Electromagnetic funnel coil. DETAILED DESCRIPTION

[0038] The present invention is further described in detail below with reference to specific embodiments.

[0039] Example:

[0040] like Figure 1 As shown, a dynamic adaptive evaporation system of the present invention includes a vacuum chamber 1, an evaporation source 2 and a substrate carrier 3. The vacuum chamber 1 includes an evaporation area 11a, a transition area 11b and a deposition area 11c connected in sequence from bottom to top. A first partition 12a is provided between the evaporation area 11a and the transition area 11b. The center of the first partition 12a is ventilated and provided with a first partition device 13a. A second partition 12b is provided between the transition area 11b and the deposition area 11c. The center of the second partition 12b is ventilated and provided with a second partition device 13b. The middle of the evaporation area 11a is provided with an evaporation device. Source 2, a cooling chamber 11d is arranged around the outer periphery of the transition zone 11b, a condensation ring for cooling the transition zone 11b and a deep cold trap for cooling the deposition zone 11c are provided in the cooling chamber 11d, a substrate carrier 3 is provided in the upper center of the deposition zone 11c, a first vacuum port 14a connected to a first vacuum pump is provided on the side wall of the evaporation zone 11a, a second vacuum port 14b connected to a second vacuum pump is provided on the side wall of the transition zone 11b, and a third vacuum port 14c connected to a third vacuum pump is provided on the side wall of the deposition zone 11c, and the suction forces of the first vacuum pump, the second vacuum pump and the third vacuum pump increase successively.

[0041] Here, the first vacuum pump can be a small mechanical pump (10-20 L / s), the second vacuum pump can be a turbine pump (100-200 L / s), and the third vacuum pump can be a molecular pump (500-1000 L / s). The suction forces of the three increase in sequence, so that each zone can be used as a control point to create a pressure gradient in the vacuum chamber 1. The working pressure of the evaporation zone 11a is controlled at 10 -3 ~10 -2 Pa, the working pressure of the transition zone 11b is controlled at 10 -4 ~10 -3 Pa, the working pressure of the deposition area 11c is controlled at 10 -6 ~10 -5PaPa, the edges of the horizontal partitions (first partition 12a and second partition 12b) between each zone are connected to the cavity wall through sealing rings, and an electromagnetic barrier (first partition device 13a and second partition device 13b) is embedded in the center: a porous molybdenum substrate (thickness 2-5 mm) can be used, with a micropore array with a diameter of 0.1-1 mm distributed on the surface and a porosity of 20%-80%. Copper electrodes are embedded on both sides of the substrate and connected to a radio frequency power supply (13.56 MHz, voltage 100-500 V). An insulating layer is coated on the surface, and argon gas (1-5 sccm) is injected into the micropores to excite low-density plasma. The passage rate of neutral molecules (such as FAI) is controlled by electric field confinement and particle collisions, forming an effect similar to a variable aperture, and the molecular flow rate is regulated in real time. The three areas are equipped with independent vacuum pumping systems to achieve multi-level pressure precision isolation and reduce the interference of pressure fluctuations on the deposition process.

[0042] During the deposition of FAI, the pressure in the evaporation zone 11a rises to 10 -2 Pa, it is difficult for the traditional system to maintain the pressure of the deposition area 11c at 10 -5 The present invention achieves multi-level pressure isolation through the following mechanisms: (1) A low voltage (100-200 V) is applied to the first isolation device 13a to limit the molecular flow to 10~15 molecules / s, so that the pressure in the transition zone 11b is reduced to 10 -3 Pa; (2) The second isolation device 13b applies a high voltage (300-500 V) to further reduce the flow rate to 10~14 molecules / s, and cooperates with a high-speed molecular pump (1000 L / s) to ensure that the pressure in the deposition area 11c is stable at 10 -5 Pa.

[0043] This technology significantly reduces pressure fluctuations (from ±50% to ±5%), improves material utilization (from 30% to 80%), and enhances film quality through byproduct isolation. Compared to existing technologies, its dynamic control capabilities and adaptability to dispersed organic materials represent significant technological advancements.

[0044] like Figure 1 and Figure 2 As shown, a film thickness monitoring device 4 is provided within the deposition area 11c, located below the substrate carrier 3. The film thickness monitoring device 4 comprises a plurality of crystal oscillator detectors 41 arranged in a circular array around a vertical axis, a plating prevention shield 42 that rotates about the vertical axis, and a cleaning head 43 that moves with the plating prevention shield 42. The plating prevention shield 42 has a notch 421 that allows only one crystal oscillator detector 41 (QCM) to be exposed. When the notch 421 is aligned with one crystal oscillator detector 41, the cleaning head 43 is aligned with the other crystal oscillator detector 41.

[0045] The film thickness monitoring device 4 is used to monitor the thickness of the coating on the substrate in real time. It can be a crystal oscillator detector 41 or a laser interferometer head. To overcome the problem of oscillation frequency attenuation caused by surface contamination during the deposition of organic materials in traditional QCMs, a monitoring array consisting of multiple crystal oscillator detectors 41 is set up in the device of the present invention to detect the thickness of the deposited film in real time. The number of crystal oscillator detectors 41 of the present invention is 4-10 (coated with a TiO2 photocatalytic layer), and the crystal oscillator detectors 41 are equipped with a low-temperature condensation ring (10-20°C) to ensure that the temperature of the crystal oscillator detectors 41 can be controlled. When the notch 421 is aligned with one crystal oscillator detector 41, the crystal oscillator detector 41 can monitor the coating thickness in real time, while the cleaning head 43 is aligned with the other crystal oscillator detector 41. This film thickness monitoring device 4 is a self-cleaning crystal oscillator system. When it detects that the crystal oscillator frequency has dropped to a preset value due to organic deposits, it switches to a backup crystal oscillator and automatically cleans the replaced crystal oscillator, restoring its sensitivity. This ensures the uninterrupted use and reuse of the crystal oscillator detector 41, extending its lifespan and reducing the frequency of cavity replacement. The cleaning head 43 can perform periodic self-cleaning using either an ultraviolet light source (wavelength 254 nm) or a plasma gas nozzle (power 50-300 W).

[0046] like Figure 1 As shown, the first partition device 13a and the second partition device 13b are electromagnetic barriers, which are made of a porous molybdenum substrate with a thickness of 2 to 5 mm. A micropore array with a diameter of 0.1 to 1 mm is distributed on the porous molybdenum substrate, and the porosity is 20% to 80%.

[0047] like Figure 1 As shown, an electromagnetic funnel coil 5 is provided below the first partition device 13a. The lower diameter of the electromagnetic funnel coil 5 is larger than the upper diameter. The lower diameter of the electromagnetic funnel coil 5 is not less than the diameter of the evaporation source 2. The upper diameter of the electromagnetic funnel coil 5 is equal to the diameter of the first partition device 13a. The electromagnetic funnel coil 5 has a diameter of 2-5 mm, 10-20 turns, and a coil spacing of approximately 1-2 cm.

[0048] The electromagnetic funnel coil 5 is a vapor flow control device installed above the evaporation source 2. It uses a magnetic field to guide the FAI vapor from a disordered diffusion state into a directional molecular beam. Vapor released from traditional evaporation sources diffuses isotropically, limited by the cosine distribution (cosθ distribution), resulting in significant differences in deposition rate between the substrate edge and center (uniformity ±10%-20%). This problem is exacerbated for highly volatile materials such as FAI. Therefore, the electromagnetic funnel coil 5 is introduced to achieve directional vapor transport and uniform deposition.

[0049] FAI vapor is mainly composed of neutral molecules and is not directly affected by the magnetic field. However, FAI vapor contains charged fragments (in the evaporation area 11a, due to the interaction between decomposition products and plasma, charged fragments such as I - 、CH(NH2)2 + These particles are constrained by the Lorentz force (F = qv × B) and spiral upward along magnetic field lines. Neutral FAI molecules are indirectly guided upward by collisions and momentum transfer (drag effect) with charged particles. The molecular beam is released upward from the top of the funnel, passing through the transition zone 11b and the deposition zone 11c, and ultimately deposited uniformly on the substrate above (at a distance of 10-20 cm).

[0050] like Figure 1 As shown, the evaporation source 2 includes a porous crucible 21 , a plasma generator 22 located above the porous crucible 21 , and a pulse heater 23 located below the porous crucible 21 .

[0051] The lower portion of the evaporation source 2 is heated by a pulse heater 23. The porous crucible 21 utilizes an ultra-thin, porous tungsten-ceramic composite boat or crucible embedded with a nickel-chromium heating filament, enabling pulse heating (frequency 0.1-1 Hz), rapidly raising the temperature to near the evaporation temperature. Pulsed heating alternates between brief high-temperature pulses and low-temperature cooling, effectively reducing the average heat load on the organic material and preventing prolonged localized overheating and decomposition. A plasma generator 22 (low-pressure Ar or N2 atmosphere, power 5-30 W) is located above the porous crucible 21. This low-density plasma generates surface activation and light bombardment of the organic material molecules, thereby lowering their sublimation energy barrier (lowering the evaporation temperature) and promoting molecular cluster disaggregation, minimizing molecular decomposition. Plasma-assisted heating can reduce the evaporation temperature of organic materials by 20%-30% (reference: Applied Surface Science, 2018). The plasma energy is significantly lower than the chemical bond energy required for FAI decomposition (C-N bonds are approximately 3 eV, and I-N bonds are approximately 100 eV). - The plasma-assisted pulse evaporation source, combined with super plasma technology and pulse heating, achieves low-temperature, high-efficiency, and uniform material volatilization, reducing decomposition, with a decomposition rate as low as 4% and HI concentration <10 -5 mbar.

[0052] A vapor deposition method using a vapor deposition system, comprising the following steps:

[0053] S1. Establish dynamic pressure stratified vacuum environment: the working pressure of evaporation zone 11a is controlled at 10 -3 ~10 -2 Pa, the working pressure of the transition zone 11b is controlled at 10 -4 ~10 -3Pa, the condensation ring temperature is 10~20℃, and the working pressure of the deposition area 11c is controlled at 10 -6 ~10 -5 Pa, deep cold trap temperature is -50~-100℃;

[0054] S2. Preheating: heating the deposition material to 75-85°C in the evaporation zone 11a to remove impurities and moisture;

[0055] S3, evaporation: heating the evaporation material to 125-135° C. in the evaporation zone 11 a , and monitoring the film thickness in real time until the target film thickness is reached, thus completing the evaporation.

[0056] The temperature of the evaporation source 2 is maintained at 125-135°C. The pulse heater 23 operates at a heating cycle frequency of 0.2-0.5 Hz and a duty cycle of 30%-50%. The plasma generator 22 operates at a power of 5-30 W, using an inert gas as the shielding gas. The electromagnetic funnel coil 5 operates at a current of 1-5 A, generating a gradient magnetic field with a field strength of 0.1-0.5 T.

[0057] This dynamic adaptive evaporation system can be combined with artificial intelligence for feedback control:

[0058] a) The sensor network collects the pressure, temperature, evaporation rate and film thickness data in each vacuum chamber 1 in real time and transmits the data to the central control unit. The sensor group includes: pressure sensor (10 -7 -10 -1 Pa, accuracy ±0.1%), infrared temperature sensor (50-200℃, accuracy ±1℃), mass spectrometer (detection of HI, sensitivity 10 -6 mbar), laser interferometer film thickness gauge (accuracy 0.1nm);

[0059] b) The control unit incorporates an AI module based on reinforcement learning and dynamic adaptive algorithms. This module compares real-time data with preset process parameters and autonomously adjusts the evaporation source heating power, pulse heating cycle, plasma power, and electromagnetic barrier aperture settings to achieve automatic optimization of process parameters. The actuator group includes: a pulse heater 23 (0.1-1 Hz), a plasma generator 22 (5-30 W), an electromagnetic barrier power supply (100-500 V), and a crystal oscillator array self-cleaning system.

[0060] c) AI control not only generates optimal deposition plans based on the characteristics of different organic materials, but also compensates for environmental fluctuations in real time, ensuring the deposition process always operates at optimal conditions, significantly improving product consistency and production efficiency. The control module is based on a Deep Q Network (DQN) reinforcement learning algorithm. The state space includes pressure, temperature, byproduct concentration, and film thickness, while the action space includes heating frequency, plasma power, and barrier voltage. The reward function is a weighted sum of uniformity (±3%) and decomposition rate (<5%). The DQN model is pre-trained on a dataset simulating specific materials, such as the FAI deposition dataset (over 100 experiments), and uses online learning to update weights. Integrated into an ARM Cortex-M7 controller, the response time is controlled to <10ms.

[0061] The above are only some embodiments of the present invention. For those skilled in the art, several modifications and improvements can be made without departing from the inventive concept of the present invention, which all fall within the scope of protection of the present invention.

Claims

1. A dynamic adaptive evaporation system, characterized by: The invention comprises a vacuum chamber, an evaporation source and a substrate carrier, wherein the vacuum chamber comprises an evaporation zone, a transition zone and a deposition zone which are sequentially connected from bottom to top, a first partition plate is provided between the evaporation zone and the transition zone, the center of the first partition plate is ventilated and provided with a first partition device, a second partition plate is provided between the transition zone and the deposition zone, the center of the second partition plate is ventilated and provided with a second partition device, an evaporation source is provided in the middle of the evaporation zone, a cooling chamber is arranged around the periphery of the transition zone, a condensation ring for cooling the transition zone and a deep cold trap for cooling the deposition zone are provided in the cooling chamber, and the upper portion of the deposition zone A substrate carrier is provided at the center of the part, a first air pumping port connected to a first air pump is provided on the side wall of the evaporation zone, a second air pumping port connected to a second air pump is provided on the side wall of the transition zone, and a third air pumping port connected to a third air pump is provided on the side wall of the deposition zone, and the suction forces of the first air pump, the second air pump and the third air pump increase successively; the first partition device and the second partition device are both electromagnetic barriers, and the electromagnetic barriers are made of a porous molybdenum substrate with a thickness of 2 to 5 mm, and a micropore array with a diameter of 0.1 to 1 mm is distributed on the porous molybdenum substrate, and the porosity is 20% to 80%.

2. The dynamic adaptive evaporation system according to claim 1, characterized in that: A film thickness monitoring device is provided in the deposition area and is located below the substrate carrier.

3. The dynamic adaptive evaporation system according to claim 2, characterized in that: The film thickness monitoring device includes a plurality of crystal oscillator detectors arranged in a circular array around a vertical axis, an anti-plating baffle rotating around the vertical axis, and a cleaning head moving with the anti-plating baffle. A notch is provided on the anti-plating baffle to allow only one crystal oscillator detector to be exposed. When the notch is aligned with one crystal oscillator detector, the cleaning head is aligned with another crystal oscillator detector.

4. The dynamic adaptive evaporation system according to claim 3, characterized in that: The cleaning head is a plasma gas nozzle.

5. A vapor deposition method using the vapor deposition system according to claim 3 or 4, characterized in that: The steps are: S1. Establishing a dynamic pressure stratified vacuum environment: The working pressure of the evaporation zone is controlled at 10 -3 ~10 -2 Pa, the working pressure of the transition zone is controlled at 10 -4 ~10 -3 Pa, the condensation ring temperature is 10~20℃, and the working pressure of the deposition area is controlled at 10 -6 ~10 -5 Pa, the temperature of the deep cold trap is -50~-100℃; S2. Preheating: heating the evaporation material to 75-85°C in the evaporation zone to remove impurities and moisture; S3, evaporation: heating the evaporation material to 125-135° C. in the evaporation zone, monitoring the film thickness in real time until the target film thickness is reached, and completing the evaporation.

6. The vapor deposition method according to claim 5, wherein: The evaporation source includes a porous crucible, a plasma generator located above the porous crucible, and a pulse heater located below the porous crucible.

7. The vapor deposition method according to claim 6, wherein: The temperature of the evaporation source is maintained at 125-135° C., the heating cycle frequency of the pulse heater is 0.2-0.5 Hz, and the duty cycle is 30%-50%. The power of the plasma generator is 5-30 W, and an inert gas is used as the shielding gas.

8. The vapor deposition method according to claim 5, wherein: An electromagnetic funnel coil is provided below the first partition device. The lower diameter of the electromagnetic funnel coil is larger than the upper diameter. The lower diameter of the electromagnetic funnel coil is not less than the diameter of the evaporation source. The upper diameter of the electromagnetic funnel coil is equal to the diameter of the first partition device. The electromagnetic funnel coil has a diameter of 2-5 mm, 10-20 turns, and a coil spacing of 1-2 cm.

9. The evaporation method according to claim 8, wherein: The electromagnetic funnel coil has an operating current of 1-5A and generates a gradient magnetic field with a field strength of 0.1-0.5T.

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