Multi-component film evaporation film thickness monitoring and adjusting device, method and application

Abstract

The invention provides a multi-component thin film evaporation film thickness monitoring and adjusting device and method and application, the multi-component thin film evaporation film thickness monitoring and adjusting device comprises a conveying module used for conveying a substrate so as to deposit a film layer on the moving substrate through a first evaporation source and a second evaporation source, the conveying module is provided with a position sensing module, and the position sensing module is used for sensing the position of the film layer on the moving substrate through the first evaporation source and the second evaporation source; a trigger signal is generated when the substrate enters the set area; the first film thickness monitoring module is used for acquiring the deposition speed of the first evaporation source and the thickness of a film layer deposited on the substrate; the second film thickness monitoring module is used for acquiring a reflection spectrum of the second evaporation source in a set area; and the control module is used for obtaining the film thickness according to the reflection spectrum of the second evaporation source through an inversion algorithm, and independently feeding back and controlling the real-time evaporation working condition. The thickness of materials with different evaporation rates is subjected to differential parallel monitoring, a closed-loop feedback system is formed, the film thickness monitoring accuracy is improved, and long-time operation of monitoring work is guaranteed.

Description

Technical Field

[0001] This invention belongs to the field of coating technology, specifically the field of film thickness monitoring, and particularly relates to a device, method, and application for monitoring and adjusting the thickness of multi-component thin film evaporation. Background Technology

[0002] In the industrial production of perovskite solar cells, the precise deposition of inorganic salt layers is a core factor determining the photoelectric performance of the device. Current technologies employ thermal evaporation for thin film deposition, using a quartz crystal microbalance (QCM) to monitor the deposition process in real time and control the film thickness by tracking the deposition rate.

[0003] However, the evaporation characteristics of different inorganic salts in perovskite material systems vary significantly. For example, evaporation materials with a low component proportion need to maintain a low evaporation rate to ensure stable operation of the QCM for over 300 hours. Conversely, the main components require a high evaporation rate, leading to rapid accumulation of thick deposits on the QCM surface. This results in loss of frequency response capability within 6-12 hours, necessitating frequent maintenance and severely impacting production continuity and equipment capacity. Furthermore, frequent QCM replacement or cleaning not only reduces equipment capacity but may also introduce contamination risks, affecting film quality and device consistency. Current technologies lack non-contact online detection solutions for high-evaporation-rate materials, making it difficult to meet the continuity and stability requirements of automated production lines. Moreover, existing monitoring systems are not suitable for non-contact real-time film thickness detection under high-temperature, high-deposition-rate conditions, and the film thickness detection results are delayed, failing to provide real-time feedback for adjusting evaporation process parameters.

[0004] Therefore, developing a film thickness monitoring technology that adapts to different vapor deposition characteristics has become an urgent need in the industry. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the present invention aims to provide a multi-component thin film evaporation thickness monitoring and adjustment device, method, and application, which realizes differentiated collaborative monitoring and control of materials with different evaporation rates, and predicts film thickness through an inversion algorithm to form a closed-loop feedback system, thereby improving the accuracy of thickness prediction and the ability to resist process disturbances.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] In a first aspect, the present invention provides a multi-component thin film deposition thickness monitoring and adjustment device, comprising a transport module, a first film thickness monitoring module, a second film thickness monitoring module, and a control module; the transport module is used to transport a substrate for depositing a film layer on a moving substrate using a first deposition source and a second deposition source, wherein the evaporation rate of the first deposition source is less than the evaporation rate of the second deposition source; the transport module is further provided with a position sensing module, which generates a trigger signal when the substrate enters a set area; the first film thickness monitoring module is used to acquire a first film thickness monitoring and adjustment device. The deposition rate of the evaporation source and the thickness of the film layer deposited on the substrate are measured. The second film thickness monitoring module is located below the substrate transport path and is used to acquire the reflection spectrum of the second evaporation source within a set area. The control module is connected to the transport module, the first film thickness monitoring module, the second film thickness monitoring module, the position sensing module, the first evaporation source, and the second evaporation source. It is used to receive the deposition rate and film thickness of the first evaporation source, and obtain the film thickness of the second evaporation source through an inversion algorithm based on the reflection spectrum of the second evaporation source. It also independently feeds back and controls the evaporation conditions of the first and second evaporation sources.

[0008] This invention integrates multi-modal film thickness detection fusion and intelligent feedback control to perform differentiated monitoring and unified control of film thickness deposited on substrates by high-evaporation-rate materials and low-evaporation-rate materials. It also forms a closed-loop feedback mechanism within the system, achieving automated regulation, reducing manual intervention, improving thickness prediction accuracy, adapting to various thin film deposition scenarios, and enhancing system applicability.

[0009] As a preferred embodiment of the present invention, the first film thickness monitoring module includes at least one QCM sensing device, the QCM sensing device being parallel to the substrate, and the QCM sensing device being electrically connected to the control module for acquiring the deposition rate of the first evaporation source and the film thickness deposited on the substrate, and uploading the data to the control module. The control module receives and analyzes the deposition rate and film thickness, and provides feedback to control the real-time evaporation status of the first evaporation source.

[0010] This invention employs a QCM sensing device for real-time in-situ monitoring and control of the film thickness formed by materials with low evaporation rates. It features high sensitivity, long-term stable operation, reduced equipment maintenance and replacement frequency, and facilitates long-term operation of the evaporation process.

[0011] As a preferred embodiment of the present invention, the second film thickness monitoring module includes an electrically connected spectral detection device and a shutter-type optical shutter; the spectral detection device and the shutter-type optical shutter are independently electrically connected to the control module; the control module receives a trigger signal generated by the position sensing module and, in conjunction with the transmission speed of the substrate, controls the shutter-type optical shutter to switch, thereby opening or closing the spectral detection device; the spectral detection device acquires the reflection spectrum and uploads it to the control module; the control module calculates the film thickness deposited on the substrate by the second evaporation source based on the reflection spectrum using an inversion algorithm, and then provides feedback to control the real-time evaporation status of the second evaporation source.

[0012] This invention targets the vapor deposition of materials with high evaporation rates. It employs an optical detection timing control strategy based on position triggering and a high-speed shutter, which activates and acquires the reflection spectrum only within the detection window. This achieves contamination protection and high signal-to-noise ratio spectral acquisition during the high-speed coating process, significantly improving the continuous operating time and production capacity of the equipment.

[0013] As a preferred embodiment of the present invention, the distance between the spectral detection device and the substrate is 3 to 10 cm, for example, it can be 3 cm, 4 cm, 5 cm, 6 cm, 7 cm, 8 cm, 9 cm or 10 cm, and is not limited to the listed values. Other unlisted values ​​within this range are also applicable.

[0014] The response time of the shutter-type optical shutter is <10ms.

[0015] As a preferred embodiment of the present invention, the control module includes a data receiving end, a data analysis end, and an execution end. The data receiving end is electrically connected to the transport module, the position sensing module, the first film thickness monitoring module, and the second film thickness monitoring module, respectively. The data receiving end is configured to receive the transmission speed of the substrate, the trigger signal generated by the position sensing module, the deposition rate and film thickness obtained by the first film thickness monitoring module, and the reflectance spectral data obtained by the second film thickness monitoring module, respectively. The data analysis end is electrically connected to the data receiving end and the execution end, respectively. The data analysis end is configured to analyze whether the deposition rate and film thickness of the first evaporation source deviate from the target threshold, calculate the predicted value of the second evaporation source through an inversion algorithm, analyze whether the predicted value deviates from the standard value, and output the analysis result. The execution end is also electrically connected to the data receiving end, the second film thickness monitoring module, the first evaporation source, and the second evaporation source, respectively. The execution end is configured to perform timing control on the second film thickness monitoring unit and adjust the real-time evaporation conditions of the first and second evaporation sources.

[0016] As a preferred embodiment of the present invention, the data analysis terminal includes a database, a modeling component, and an analysis terminal. The modeling component is electrically connected to the database and the analysis terminal, respectively, and the analysis terminal is electrically connected to the data receiving terminal and the execution terminal. The database is configured to pre-store a dataset of the reflection spectra of a film layer formed by a second evaporation source of known thickness. The modeling component is configured to construct and train a machine learning hybrid model based on the dataset to map the reflection spectrum to the film thickness using physical enhancement. The analysis terminal is configured to analyze and process the data information from the data receiving terminal, retrieve the machine learning hybrid model from the modeling component to interact with the data information, and output the analysis results to the execution terminal.

[0017] Secondly, the present invention provides a method for monitoring and adjusting the thickness of multi-component thin film evaporation. The method employs the multi-component thin film evaporation thickness monitoring and adjustment device described in the first aspect, comprising: a transport substrate; depositing a film layer on a moving substrate using a first evaporation source and a second evaporation source; acquiring the deposition rate of the first evaporation source and the thickness of the film layer deposited on the substrate using a first film thickness monitoring module, and uploading this data to a control module; the control module receiving the deposition rate and film layer thickness of the first evaporation source, and analyzing the deposition rate and film layer thickness of the first evaporation source. Whether the thickness deviates from the target threshold, the analysis results are used to control the real-time evaporation conditions of the first evaporation source. When the substrate enters the set area, the position sensing module generates a trigger signal and uploads it to the control module. The control module receives the signal and controls the second film thickness monitoring module to obtain the reflection spectrum of the second evaporation source in the set area. The second film thickness monitoring module uploads the reflection spectrum to the control module. The control module receives the reflection spectrum and obtains the film thickness deposited by the second evaporation source on the substrate through an inversion algorithm. The film thickness is used to control the real-time evaporation conditions of the second evaporation source.

[0018] As a preferred technical solution of the present invention, the method of obtaining the film thickness of the second evaporation source deposited on the substrate by the inversion algorithm includes: generating the mapping relationship between the reflection spectrum and the film thickness based on the transfer matrix method, performing noise robustness fitting and nonlinear correction by the improved gradient boosting decision tree regression algorithm, and constructing a machine learning hybrid model; inputting the real-time reflection spectrum and interacting with the machine learning hybrid model, and outputting the calculation result of the film thickness of the second evaporation source.

[0019] This invention combines the physical model of the transfer matrix method with the improved gradient boosting decision tree regression algorithm to form a hybrid model. By combining the physical model with the data-driven method, the thickness prediction value is obtained by inverting the thickness prediction value through the hybrid model, which improves the thickness prediction accuracy and the ability to resist process disturbances, and meets the high-speed continuous detection requirements of the thin film evaporation process.

[0020] As a preferred embodiment of the present invention, the vapor deposition conditions include at least one of working power, deposition rate and deposition time.

[0021] This invention adjusts the evaporation process based on feedback control of monitored film thickness, thereby reducing coating fluctuations and improving film uniformity.

[0022] Thirdly, the present invention provides an application of the multi-component thin film evaporation thickness monitoring and adjustment device described in the first aspect, wherein the multi-component thin film evaporation thickness monitoring and adjustment device is applied to the evaporation of perovskite inorganic salt layers.

[0023] The system refers to an equipment system, device, or production device.

[0024] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0025] (1) Based on the difference in evaporation rate of different thin film materials, the present invention adopts a modular film thickness monitoring design to avoid production interruption due to the failure of a single monitoring method, and ensures the long-term efficient operation of thin film evaporation.

[0026] (2) The present invention establishes a closed-loop feedback system for online film thickness monitoring and evaporation source evaporation conditions, realizes automatic film thickness control, and predicts film thickness through inversion algorithm, which greatly improves the accuracy of thickness prediction, enhances the system's resistance to human interference and process disturbance, reduces film thickness fluctuation, and improves film uniformity and yield.

[0027] (3) This invention uses non-contact, high-precision film thickness detection for high evaporation rate materials, which reduces operation and maintenance costs and pollution risks, ensures long-term stable operation of the monitoring system, and has a measurement accuracy better than ±3%, reducing maintenance costs by more than 50%.

[0028] (4) This invention is suitable for various thin film evaporation scenarios, especially for monitoring the film thickness of perovskite inorganic salt evaporation, effectively improving the film uniformity of the perovskite absorber layer, reducing film surface defects, and helping to enhance battery performance and photoelectric conversion efficiency. Attached Figure Description

[0029] Figure 1 This is a schematic diagram of the structure of the multi-component thin film evaporation thickness monitoring and adjustment device provided in Embodiment 1 of the present invention.

[0030] Among them, 10-CsI vapor deposition source; 20-PbBr2 vapor deposition source; 30-PbI2 vapor deposition source; 40-substrate; 1-control module; 2-position sensing module; 3-second QCM sensing device; 4-first QCM sensing device; 5-spectral detection device; 6-shutter-type optical shutter. Detailed Implementation

[0031] It should be understood that in the description of this invention, the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0032] It should be noted that, in the description of this invention, unless otherwise explicitly specified and limited, the terms "set," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0033] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0034] In one specific embodiment, the present invention provides a multi-component thin film deposition thickness monitoring and adjustment device, including a transport module, a first film thickness monitoring module, a second film thickness monitoring module, and a control module. The transport module is used to transport a substrate for depositing a film layer on the moving substrate using a first deposition source and a second deposition source, wherein the evaporation rate of the first deposition source is less than the evaporation rate of the second deposition source. The transport module is also equipped with a position sensing module, which generates a trigger signal when the substrate enters a designated area. The first film thickness monitoring module is used to obtain the deposition rate of the first deposition source and the thickness of the film layer deposited on the substrate. The second film thickness monitoring module is disposed below the substrate transport path and is used to obtain the reflection spectrum of the second deposition source within the designated area. The control module is connected to the transport module, the first film thickness monitoring module, the second film thickness monitoring module, the position sensing module, the first evaporation source, and the second evaporation source, respectively. It is used to receive the deposition rate and film thickness of the first evaporation source, and obtain the film thickness of the second evaporation source through an inversion algorithm based on the reflection spectrum of the second evaporation source. It also independently feeds back and controls the evaporation conditions of the first and second evaporation sources.

[0035] The vapor deposition materials provided by the first and second vapor deposition sources include, but are not limited to, organic, inorganic, and metallic raw materials. Due to the differences in the proportions of different raw materials in the multi-component film, their evaporation rates are not entirely the same. To ensure the uniformity of the film, the evaporation rate of the vapor deposition source with a higher proportion of the component is usually higher than that of the vapor deposition source with a lower proportion of the component. Furthermore, there can be multiple first and second vapor deposition sources to provide different vapor deposition materials, adjusted according to the film composition. For example, there may be two first vapor deposition sources and one second vapor deposition source, or three first vapor deposition sources and one second vapor deposition source, or two first vapor deposition sources and two second vapor deposition sources, etc.

[0036] The substrate, serving as a carrier to support the multi-component thin film, can be a flexible or rigid substrate. The substrate can be a component of the multi-component thin film or, together with the multi-component thin film, constitute an assembly. Specifically, the substrate includes, but is not limited to, thin films, glass substrates, silicon wafers, metal substrates, and ceramic substrates. For example, in a perovskite solar cell, the substrate can be a conductive substrate covered with a carrier transport layer.

[0037] The transmission module is a linear transmission device. The deposition order of the first and second evaporation sources can be adjusted according to actual conditions, but this invention does not impose specific limitations on this.

[0038] The first film thickness monitoring module includes at least one QCM sensor, which is parallel to the substrate and used to acquire the deposition rate of the first evaporation source and the film thickness deposited on the substrate. Multiple QCM sensors can be used, each corresponding to a specific first evaporation film. The QCM sensor is based on the principle that the change in the resonant frequency of a quartz crystal is proportional to its surface mass load, and then converts the mass into thickness and deposition rate. The QCM sensor is also electrically connected to the control module, uploading real-time data of the deposition rate and film thickness of the first evaporation source to the control module. The control module receives and analyzes the deposition rate and film thickness, and provides feedback to control the real-time evaporation conditions of the first evaporation source. The control module has preset target thresholds for the deposition rate and film thickness of the first evaporation source, compares and analyzes the target thresholds with the real-time data, and adjusts the real-time evaporation conditions of the first evaporation source based on the comparison results. Because the evaporation rate of the first evaporation source is relatively low, the problem of easy contamination of the QCM sensor is alleviated, its service life is extended, and the maintenance frequency is reduced.

[0039] The second film thickness monitoring module includes an electrically connected spectral detection device and a shutter-type optical shutter. The spectral detection device is disposed below the substrate and is used to acquire the reflection spectrum of the film layer formed by the second evaporation source on the substrate. The shutter-type optical shutter controls the opening and closing of the spectral detection device. The spectral detection device and the shutter-type optical shutter are independently electrically connected to the control module. In this invention, the control module receives a trigger signal generated by the position sensing module and, in conjunction with the transmission speed of the substrate, controls the switching of the shutter-type optical shutter to open or close the spectral detection device. The spectral detection device acquires the reflection spectrum and uploads it to the control module. The positioning accuracy of the position sensing module is ±0.1 mm. The position sensing module achieves millisecond-level regional positioning, providing precise timing control for optical detection. During application, a trigger signal is generated when the substrate edge passes through, and transmitted to the control module. The control module then controls the switching of the shutter to open the spectral detection device to acquire the reflection spectrum within the set area. The control module then controls the switching of the shutter again to close the spectral detection device, ensuring it is only open during the detection window period. This effectively prevents vapor deposition contaminants from depositing on the optical components and causing contamination. The distance between the spectral detection device and the substrate is 3-10 cm, and the response time of the shutter is <10 ms. The transmission speed of the substrate is 0.1-5 m / min. Based on the transmission rate and time, the length of the set area can be determined. The control module calculates the film thickness deposited on the substrate by the second vapor deposition source using an inversion algorithm based on the reflection spectrum. When the calculated film thickness deviates from the target threshold by ±5%, the real-time vapor deposition conditions of the second vapor deposition source are automatically adjusted with an adjustment accuracy of ±1%, achieving closed-loop control.

[0040] The control module includes a data receiving end, a data analysis end, and an execution end. The data receiving end is electrically connected to the transport module, the position sensing module, the first film thickness monitoring module, and the second film thickness monitoring module, respectively. The data receiving end is configured to receive the transmission speed of the substrate, the trigger signal generated by the position sensing module, the deposition rate and film thickness acquired by the first film thickness monitoring module, and the reflectance spectral data acquired by the second film thickness monitoring module, respectively. The data analysis end is electrically connected to the data receiving end and the execution end, respectively. The data analysis end is configured to analyze whether the deposition rate and film thickness of the first evaporation source deviate from the target threshold, calculate the predicted value of the second evaporation source using an inversion algorithm, analyze whether the predicted value deviates from the standard value, and output the analysis result. The execution end is also electrically connected to the data receiving end, the second film thickness monitoring module, the first evaporation source, and the second evaporation source, respectively. The execution end is configured to perform timing control on the second film thickness monitoring unit and adjust the real-time evaporation conditions of the first and second evaporation sources.

[0041] Specifically, the data analysis terminal includes a database, a modeling component, and an analysis terminal. The database is configured to pre-store a dataset of reflectance spectra of films formed from a second evaporation source of known thickness, and the dataset contains more than 200 data samples of reflectance spectra of films of known thickness. The modeling component is electrically connected to both the database and the analysis terminal, and is configured to construct and train a machine learning hybrid model based on the dataset, representing a physically enhanced mapping relationship between reflectance spectra and film thickness. The analysis terminal is electrically connected to both the data receiving end and the execution end, and is configured to analyze and process the data information from the data receiving end, retrieve the machine learning hybrid model from the modeling component to interact with the data information, and output the analysis results to the execution end.

[0042] In another specific embodiment, the present invention provides a method for monitoring and adjusting the thickness of multi-component thin film evaporation, which employs a multi-component thin film evaporation thickness monitoring and adjustment device as described in a specific embodiment, specifically including: a transfer substrate, and depositing a film layer on the moving substrate through a first evaporation source and a second evaporation source.

[0043] The deposition rate of the first evaporation source and the thickness of the film layer deposited on the substrate are obtained by the first film thickness monitoring module and uploaded to the control module.

[0044] The control module receives the deposition rate and film thickness of the first evaporation source, analyzes whether the deposition rate and film thickness of the first evaporation source deviate from the target threshold, and feeds back the analysis results to control the real-time evaporation conditions of the first evaporation source.

[0045] When the substrate enters the set area, the position sensing module generates a trigger signal and uploads it to the control module. The control module receives the signal and controls the second film thickness monitoring module to obtain the reflection spectrum of the second evaporation source in the set area. The second film thickness monitoring module uploads the reflection spectrum to the control module.

[0046] The control module receives the reflection spectrum and obtains the film thickness deposited on the substrate by the second evaporation source through an inversion algorithm. Based on the film thickness feedback, it controls the real-time evaporation conditions of the second evaporation source.

[0047] The vapor deposition conditions include at least one of the following: operating power, deposition rate, and deposition time.

[0048] The present invention obtains the film thickness deposited on the substrate by the second evaporation source using an inversion algorithm, including:

[0049] The mapping relationship between reflectance spectrum and film thickness is generated based on the transfer matrix method. A noise-robust fitting and nonlinear correction are performed by an improved gradient boosting decision tree regression algorithm to construct a machine learning hybrid model.

[0050] Input the real-time reflectance spectrum and interact with the machine learning hybrid model to output the calculated film thickness of the second vapor deposition source.

[0051] The training process of the machine learning hybrid model in this invention includes:

[0052] Phase 1: Offline training—Establishing an intelligent mapping relationship between thickness and reflectance spectrum.

[0053] This phase is completed before deployment on the production line, and its purpose is to train the computer to identify thickness based on the reflectance spectrum.

[0054] (1) The transfer matrix method generates a large-scale, high-quality training dataset.

[0055] In actual production, obtaining a large number of high-quality samples with known precise thicknesses that cover all process variations is extremely costly and difficult. To address this, this invention utilizes a transfer matrix method physical model. First, the optical constants of the thin film to be tested are input, including but not limited to refractive index and extinction coefficient. Then, the computer automatically and in batches simulates and generates "perfect" theoretical reflectance spectra corresponding to different thicknesses (e.g., from 10 nm to 600 nm, in 1 nm increments), ensuring a large dataset, no noise, and absolutely accurate labeling (thickness).

[0056] (2) Introduce process noise for data enhancement.

[0057] To enable the model to adapt to real, disruptive production environments, noise needs to be injected into the perfect theoretical spectral data. This noise simulates various fluctuations in actual production, including but not limited to fluctuations in light source intensity, detector noise, minor unevenness on the substrate surface, and film inhomogeneity, making the training data closer to the real signals collected during online detection.

[0058] (3) The gradient boosting decision tree model is trained.

[0059] Input variable X: The generated, noisy reflectance spectral data (typically reflectance values ​​corresponding to hundreds of wavelength points).

[0060] Output dependent variable Y: The thickness value used to generate this spectrum.

[0061] Training process: The gradient boosting decision tree algorithm learns this vast "spectrum-thickness" mapping relationship, directly identifying complex, non-linear patterns from the data. After training, the gradient boosting decision tree model calculates the thickness using the spectrum.

[0062] Phase Two: Online Inversion—Real-time Thickness Calculation.

[0063] This stage is performed in real time while the production line is running, and it is extremely fast.

[0064] (1) Data acquisition: The online optical detection module acquires the measured reflection spectrum of a certain point on the substrate.

[0065] (2) Preprocessing: Perform simple standardization, filtering and other preprocessing operations on the reflectance spectrum.

[0066] (3) Model prediction: Input the preprocessed measured reflectance spectrum data into the trained gradient boosting decision tree model.

[0067] (4) Output of results: The gradient boosting decision tree model directly outputs its predicted thickness value.

[0068] In another specific embodiment, the present invention provides an application of the multi-component thin film evaporation thickness monitoring and adjustment device described in the specific embodiment, which is applied to the evaporation of perovskite inorganic salt layers. The present invention has modular scalability and can be adapted to various perovskite materials and other high-evaporation-rate functional thin film preparation scenarios.

[0069] The present invention provides vapor deposition materials for perovskite inorganic salt layers including, but not limited to, any one or at least two combinations of PbI2, PbBr2, CsI, CsPbI3, CsBr, BaTiO3, SrTiO3, and LaCoO3. Typical but non-limiting combinations include: combinations of PbI2 and PbBr2, combinations of PbI2, PbBr2, and CsI, combinations of PbBr2, CsI, and CsPbI3, combinations of PbI2 and CsI, combinations of CsBr, BaTiO3, and SrTiO3, combinations of BaTiO3, SrTiO3, and LaCoO3, etc.

[0070] Depending on the proportions of each component in the perovskite inorganic salt layer, its evaporation rate during the vapor deposition process also varies. Taking a perovskite inorganic salt material with a composition of PbI2, PbBr2, and CsI as an example, the mass ratio of PbI2, PbBr2, and CsI is 36:4:1. This results in the evaporation rate of PbI2 being greater than that of PbBr2 and CsI during the vapor deposition process, while the evaporation rates of PbBr2 and CsI are comparable.

[0071] Example 1

[0072] This embodiment provides a multi-component thin film evaporation thickness monitoring and adjustment device for process monitoring during the evaporation of perovskite inorganic salt layers. The perovskite inorganic salt layer is deposited using PbI2, PbBr2, and CsI as raw materials. Figure 1As shown, the entire device includes a CsI evaporation source 10, a PbBr2 evaporation source 20, a PbI2 evaporation source 30, a transport module, a first film thickness monitoring module, a second film thickness monitoring module, and a control module 1. The control module 1 is electrically connected to the PbI2 evaporation source, the PbBr2 evaporation source, the CsI evaporation source, the transport module, the first film thickness monitoring module, and the second film thickness monitoring module, respectively.

[0073] The transport module is used to transport the substrate 40. CsI evaporation source 10, PbBr2 evaporation source 20, and PbI2 evaporation source 30 provide CsI, PbBr2, and PbI2 respectively, to sequentially deposit corresponding films on the substrate 40. Simultaneously, the evaporation rate of PbI2 is higher than that of PbBr2 and CsI, and the evaporation rates of PbBr2 and CsI are comparable. The transport module includes a position sensing module 2 disposed below the transport path of the substrate 40, used to generate a trigger signal when the substrate 40 enters a designated area and upload it to the control module 1.

[0074] The first film thickness monitoring module includes a first QCM sensor 4 and a second QCM sensor 3. The first QCM sensor 4 is parallel to the substrate 40 and is positioned toward the PbBr2 film on the deposition substrate, and is used to obtain the deposition rate of the PbBr2 evaporation source 20 and the film thickness deposited on the substrate 40. The second QCM sensor 3 is parallel to the substrate 40 and is positioned toward the CsI film on the deposition substrate, and is used to obtain the deposition rate of the CsI evaporation source 10 and the film thickness deposited on the substrate 40.

[0075] The second film thickness monitoring module includes an electrically connected spectral detection device 5 and a shutter-type optical shutter 6, which are independently electrically connected to the control module 1. The spectral detection device 5 is positioned 5 cm below the transmission path of the substrate 40, corresponding to the position after the PbI2 film deposition is completed. The control module 1 receives a trigger signal generated by the position sensing module 2 and, in conjunction with the transmission speed of the substrate 40, controls the shutter-type optical shutter 6 to switch, thereby opening or closing the spectral detection device 5. The spectral detection device 5 acquires the reflection spectrum of the film layer deposited on the substrate 4 by the PbI2 evaporation source 30 within a set area and uploads it to the control module 1.

[0076] The control module 1 includes a data receiving end, a data analysis end, and an execution end. The data receiving end is electrically connected to the transport module, the position sensing module 2, the first QCM sensor 4, the second QCM sensor 3, and the spectral detection device 5, respectively. The data receiving end is configured to receive the transmission speed of the substrate 40 uploaded by the transport module, the trigger signal generated by the position sensing module 2, the deposition rate and film thickness of the PbB2 evaporation source 20 acquired by the first QCM sensor 4, the deposition rate and film thickness of the CsI evaporation source 10 acquired by the second QCM sensor 3, and the reflectance spectral data of the film deposited on the substrate 40 by the PbI2 evaporation source 30 acquired by the spectral detection device 5. The data analysis end includes a database, a modeling component, and an analysis terminal. The modeling component is electrically connected to the database and the analysis terminal, and the analysis terminal is electrically connected to the data receiving end and the execution end. The database is configured to pre-store a dataset of reflectance spectra of films formed by PbI2 evaporation sources 30 with known thicknesses. The modeling component is configured to construct and train a machine learning hybrid model based on the dataset to map the physical enhancement of reflectance spectra to film thickness. The analysis terminal is configured to analyze and process data from the data receiver, interact with the machine learning hybrid model in the modeling component, and output analysis results to the execution terminal. The execution terminal is also electrically connected to the data receiver, shutter 5, PbI2 deposition source 30, PbBr2 deposition source 20, and CsI deposition source 10, respectively. The execution terminal is configured to perform timing control on the shutter and adjust the real-time deposition conditions of CsI deposition source 10, PbBr2 deposition source 20, and PbI2 deposition source 30.

[0077] Example 2

[0078] This embodiment provides a method for monitoring and adjusting film thickness using the multi-component thin film evaporation thickness monitoring and adjustment device of Embodiment 1, which specifically includes the following steps.

[0079] The substrate 40 is transported using a transport module, and a film layer is deposited on the moving substrate 40 using a CsI evaporation source 10, a PbBr2 evaporation source 20, and a PbI2 evaporation source 30.

[0080] The deposition rate of the PbBr2 evaporation source 20 and the film thickness deposited on the substrate 40 are acquired by the first QCM sensor 4 and uploaded to the control module 1. The control module 1 has a first rate threshold and a first thickness threshold pre-stored. The control module 1 receives the deposition rate and film thickness data of the PbBr2 evaporation source 20, analyzes whether the deposition rate of the PbBr2 evaporation source 20 deviates from the first rate threshold, and whether the film thickness formed by the PbBr2 evaporation source 20 deviates from the first thickness threshold. Based on the analysis results, the control module 1 adjusts at least one of the working power, deposition rate, and deposition time of the PbBr2 evaporation source 20 through feedback from the execution end.

[0081] The deposition rate of the CsI evaporation source 10 and the film thickness deposited on the substrate 40 are acquired by the second QCM sensor 3 and uploaded to the control module 1. The control module 1 has a second rate threshold and a second thickness threshold pre-stored. The control module 1 receives the deposition rate and film thickness data of the CsI evaporation source 10, analyzes whether the deposition rate of the CsI evaporation source 10 deviates from the second rate threshold, and whether the film thickness formed by the CsI evaporation source 10 deviates from the second thickness threshold. Based on the analysis results, the control module 1 adjusts at least one of the operating power, deposition rate, and deposition time of the CsI evaporation source 10 through feedback from the execution terminal.

[0082] When the substrate 40 enters the set area, the position sensing module 2 generates a trigger signal and uploads it to the control module 1. The control module 1 receives the signal and switches the shutter 6 to open the spectral detection device 5 to obtain the reflection spectrum of the PbI2 evaporation source 10 in the set area and upload it to the control module 1. After the substrate 40 passes through the set area, the shutter 6 is switched again to close the spectral detection device 5.

[0083] The control module 1 receives the reflection spectrum and obtains the predicted value of the film thickness deposited on the substrate 40 by the PbI2 evaporation source 30 through the inversion algorithm. It analyzes the difference between the predicted value and the target threshold. When the predicted value deviates from the target threshold by ±5%, it adjusts at least one of the working power, deposition rate and deposition time of the PbI2 evaporation source 30 through the execution terminal.

[0084] The method for obtaining the film thickness of PbI2 evaporation source 30 deposited on substrate 40 through inversion algorithm includes: generating the mapping relationship between reflectance spectrum and film thickness based on the transfer matrix method; performing noise robustness fitting and nonlinear correction through an improved gradient boosting decision tree regression algorithm; and constructing a machine learning hybrid model. The real-time reflectance spectrum is input and interacts with the machine learning hybrid model to output the calculated film thickness of the second evaporation source, thus obtaining the predicted value.

[0085] This invention achieves differentiated parallel monitoring and unified control of materials with different evaporation rates through a collaborative monitoring mechanism of QCM and online optical inspection. It designs an optical inspection timing control strategy based on position triggering and a high-speed shutter, realizing contamination protection and high signal-to-noise ratio spectral acquisition during high-speed coating. Simultaneously, it proposes a film thickness inversion algorithm based on the transfer matrix method and an improved gradient boosting decision tree regression algorithm. This combines a physical model with a data-driven approach, improving thickness prediction accuracy and resilience to process disturbances, and forming a closed-loop feedback system to achieve automatic film thickness control and reduce manual intervention.

[0086] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A device for monitoring and adjusting the thickness of a multi-component thin film evaporation deposition, characterized in that, The multi-component thin film evaporation thickness monitoring and adjustment device includes a transport module, a first film thickness monitoring module, a second film thickness monitoring module, and a control module; The transport module is used to transport the substrate so as to deposit a film layer on the moving substrate through a first evaporation source and a second evaporation source. The evaporation rate of the first evaporation source is less than that of the second evaporation source. The transport module is also provided with a position sensing module, which generates a trigger signal when the substrate enters a set area. The first film thickness monitoring module is used to obtain the deposition rate of the first evaporation source and the thickness of the film layer deposited on the substrate. The second film thickness monitoring module is disposed below the substrate transport path and is used to obtain the reflection spectrum of the second evaporation source in a set area. The control module is connected to the transport module, the first film thickness monitoring module, the second film thickness monitoring module, the position sensing module, the first evaporation source, and the second evaporation source, respectively. It is used to receive the deposition rate and film thickness of the first evaporation source, and obtain the film thickness of the second evaporation source through an inversion algorithm based on the reflection spectrum of the second evaporation source. It also independently feeds back and controls the evaporation conditions of the first and second evaporation sources.

2. The multi-component thin film evaporation thickness monitoring and adjustment device according to claim 1, characterized in that, The first film thickness monitoring module includes at least one QCM sensing device, which is parallel to the substrate. The QCM sensing device is also electrically connected to the control module for acquiring the deposition rate of the first evaporation source and the film thickness deposited on the substrate, and uploading it to the control module. The control module receives and analyzes the deposition rate and film thickness, and provides feedback to control the real-time evaporation status of the first evaporation source.

3. The multi-component thin film evaporation thickness monitoring and adjustment device according to claim 1, characterized in that, The second film thickness monitoring module includes an electrically connected spectral detection device and a shutter-type optical shutter; The spectral detection device and the shutter are independently and electrically connected to the control module; The control module receives the trigger signal generated by the position sensing module and, in conjunction with the transmission speed of the substrate, controls the shutter to switch to open or close the spectral detection device. The spectral detection device acquires the reflection spectrum and uploads it to the control module. The control module calculates the film thickness deposited on the substrate by the second evaporation source based on the reflection spectrum using an inversion algorithm, and then feeds back to control the real-time evaporation status of the second evaporation source.

4. The multi-component thin film evaporation thickness monitoring and adjustment device according to claim 3, characterized in that, The distance between the spectral detection device and the substrate is 3~10cm; The response time of the shutter-type optical shutter is <10ms.

5. The multi-component thin film evaporation thickness monitoring and adjustment device according to claim 1, characterized in that, The control module includes a data receiving end, a data analysis end, and an execution end; The data receiving end is electrically connected to the transport module, the position sensing module, the first film thickness monitoring module and the second film thickness monitoring module respectively. The data receiving end is configured to receive the transmission speed of the substrate, the trigger signal generated by the position sensing module, the deposition rate and film thickness obtained by the first film thickness monitoring module, and the reflectance spectral data obtained by the second film thickness monitoring module respectively. The data analysis terminal is electrically connected to the data receiving terminal and the execution terminal respectively. The data analysis terminal is configured to analyze whether the deposition rate and film thickness of the first evaporation source deviate from the target threshold, calculate the predicted value of the second evaporation source through an inversion algorithm, analyze whether the predicted value deviates from the standard value, and output the analysis result. The execution terminal is also electrically connected to the data receiving terminal, the second film thickness monitoring module, the first evaporation source and the second evaporation source respectively. The execution terminal is configured to perform timing control on the second film thickness monitoring unit and adjust the real-time evaporation conditions of the first evaporation source and the second evaporation source.

6. The multi-component thin film evaporation thickness monitoring and adjustment device according to claim 5, characterized in that, The data analysis terminal includes a database, a modeling component, and an analysis terminal. The modeling component is electrically connected to the database and the analysis terminal, and the analysis terminal is electrically connected to the data receiving terminal and the execution terminal. The database is configured to pre-store a dataset of reflection spectra of films formed by a second vapor deposition source of known thickness; The modeling component is configured to build and train a hybrid machine learning model based on the mapping relationship between physically enhanced reflectance spectra and film thickness, using the dataset. The analysis terminal is configured to analyze and process the data information of the data receiving terminal, retrieve the machine learning hybrid model in the modeling component to interact with the data information, and output the analysis results to the execution terminal.

7. A method for monitoring and adjusting the thickness of multi-component thin film evaporation, characterized in that, The multi-component thin film evaporation thickness monitoring and adjustment method uses the multi-component thin film evaporation thickness monitoring and adjustment device according to any one of claims 1-6, comprising: A transfer substrate is used to deposit a film layer on a moving substrate through a first evaporation source and a second evaporation source; The deposition rate of the first evaporation source and the thickness of the film layer deposited on the substrate are obtained by the first film thickness monitoring module and uploaded to the control module. The control module receives the deposition rate and film thickness of the first evaporation source, analyzes whether the deposition rate and film thickness of the first evaporation source deviate from the target threshold, and feeds back the analysis results to control the real-time evaporation conditions of the first evaporation source. When the substrate enters the set area, the position sensing module generates a trigger signal and uploads it to the control module. The control module receives the signal and controls the second film thickness monitoring module to obtain the reflection spectrum of the second evaporation source in the set area. The second film thickness monitoring module uploads the reflection spectrum to the control module. The control module receives the reflection spectrum and obtains the film thickness deposited on the substrate by the second evaporation source through an inversion algorithm. Based on the film thickness feedback, it controls the real-time evaporation conditions of the second evaporation source.

8. The method for monitoring and adjusting the thickness of multi-component thin film evaporation according to claim 7, characterized in that, Methods for obtaining the film thickness deposited on the substrate by the second evaporation source using inversion algorithms include: The mapping relationship between reflectance spectrum and film thickness is generated based on the transfer matrix method. Noise robustness fitting and nonlinearity correction are performed by an improved gradient boosting decision tree regression algorithm, and a machine learning hybrid model is constructed. Input the real-time reflectance spectrum and interact with the machine learning hybrid model to output the calculated film thickness of the second vapor deposition source.

9. The method for monitoring and adjusting the thickness of multi-component thin film evaporation according to claim 8, characterized in that, The vapor deposition conditions include at least one of the following: operating power, deposition rate, and deposition time.

10. The application of the multi-component thin film evaporation thickness monitoring and adjustment device according to any one of claims 1-6, characterized in that, The multi-component thin film evaporation thickness monitoring and adjustment device is applied to the evaporation of perovskite inorganic salt layers.

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