Display device and temperature monitoring method thereof

Abstract

The present application provides a display device and a temperature monitoring method thereof, wherein the display device comprises: a display panel including a display area, wherein a plurality of light-emitting units are provided in the display area; an optical fiber including a connected sensing optical fiber and a transmission optical fiber, wherein the sensing optical fiber is provided in the display panel and is close to the light-emitting unit, and the transmission optical fiber extends out of the display panel; a photoelectric unit connected to the transmission optical fiber and configured to emit excitation light to the optical fiber and receive reflected light and convert it into an electrical signal; and a signal processing unit electrically connected to the photoelectric unit and configured to receive the electrical signal and analyze it to obtain temperature information distributed along the optical fiber. The display device and the temperature monitoring method thereof provided by the present application have a simple structure, are easy to manufacture, have high space utilization, good temperature monitoring accuracy, and provide a good user experience.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display device and a temperature monitoring method thereof. Background Art

[0002] OLEDs are highly dependent on the recombination and migration of organic carriers when emitting light, and their temperature characteristics are quite pronounced. Therefore, the brightness of OLED displays also exhibits certain temperature characteristics. To achieve stable luminance over a wide temperature range, the temperature of OLED displays must be monitored in real time. The temperature monitoring results are then fed back to the signal drive unit for drive voltage compensation.

[0003] Conventional temperature monitoring of OLED display devices usually requires an external temperature sensor, which has obvious disadvantages. It makes the system more complicated and is not conducive to miniaturization, intelligence, and integration. In addition, the external temperature sensor cannot truly detect the heating of the internal structure of the display panel, and the detection is subject to errors and lags. Therefore, a display device with better temperature monitoring effect is urgently needed. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a display device and a temperature monitoring method thereof.

[0005] In a first aspect of the present application, a display device is provided, comprising: a display panel, comprising a display area, wherein a plurality of light-emitting units are provided in the display area; an optical fiber, comprising a connected sensing optical fiber and a transmission optical fiber, wherein the sensing optical fiber is arranged in the display panel and is close to the light-emitting unit, and the transmission optical fiber extends out of the display panel; a photoelectric unit, connected to the transmission optical fiber, for emitting excitation light to the optical fiber and receiving reflected light to convert it into an electrical signal; and a signal processing unit, electrically connected to the photoelectric unit, for receiving the electrical signal and analyzing it to obtain temperature information distributed along the optical fiber.

[0006] In some embodiments, the display panel includes a substrate, a driving circuit layer is provided on one side of the substrate, the light-emitting unit is provided on a side of the driving circuit layer away from the substrate, the light-emitting unit includes a first electrode layer, a light-emitting layer and a second electrode layer that are stacked, the first electrode layer is arranged close to the substrate, and a pixel defining layer is provided between adjacent light-emitting units.

[0007] In some embodiments, the orthographic projection of the transmission optical fiber on the substrate is a first projection, the orthographic projection of the light emitting unit on the substrate is a second projection, and the first projection partially overlaps with the second projection.

[0008] In some embodiments, the orthographic projection of the transmission optical fiber on the substrate is a first projection, the orthographic projection of the pixel defining layer on the substrate is a third projection, and the third projection covers the first projection.

[0009] In some embodiments, the transmission optical fiber is located between the second electrode layer and the light-emitting layer, or the transmission optical fiber is located on a side of the second electrode layer away from the light-emitting layer.

[0010] In some embodiments, the diameter of the sensing fiber is smaller than the diameter of the transmission fiber.

[0011] In some embodiments, the sensing optical fiber is located in the periphery and the middle area of ​​the display area.

[0012] In some embodiments, the sensing optical fiber includes a first sensing optical fiber and a second sensing optical fiber connected, the first sensing optical fiber is arranged along the periphery of the display area, and the second sensing optical fiber is located in the middle of the display area, passes through the display area, and is connected to the transmission optical fiber.

[0013] In some embodiments, the optoelectronic unit includes: a laser for emitting excitation light to the optical fiber; a wavelength division multiplexer, one end of which is connected to the laser and the other end of which is connected to the transmission optical fiber, for receiving reflected light and separating Raman scattered light; and a photodetector, connected to the wavelength division multiplexer, for converting the Raman scattered light into an electrical signal.

[0014] In a second aspect of the present application, a temperature monitoring method for a display device is provided, using the display device described in the first aspect above, the method comprising: emitting excitation light to the optical fiber through the photoelectric unit; receiving reflected light passing through the optical fiber and separating Raman scattered light through the photoelectric unit; converting the Raman scattered light into an electrical signal through the photoelectric unit; and analyzing the electrical signal through the signal processing unit to obtain temperature information distributed along the optical fiber.

[0015] As can be seen from the above description, the present application provides a display device and a temperature monitoring method thereof, wherein the display device includes: a display panel including a display area, wherein a plurality of light-emitting units are provided in the display area; an optical fiber including a connected sensing optical fiber and a transmission optical fiber, wherein the sensing optical fiber is arranged in the display panel and is arranged close to the light-emitting unit, and the transmission optical fiber extends out of the display panel; a photoelectric unit connected to the transmission optical fiber, configured to emit excitation light to the optical fiber and receive reflected light and convert it into an electrical signal; a signal processing unit electrically connected to the photoelectric unit, configured to receive the electrical signal and analyze and obtain temperature information distributed along the optical fiber; by arranging the optical fiber in the display panel, the volume is small and the space utilization rate is higher, and the temperature changes inside the display panel can be more realistically monitored; the photoelectric unit is used to excite the optical fiber and reflect it, and the intensity of the Raman scattered light in the reflected light is sensitive to temperature changes. The reflected light is converted into an electrical signal for analysis, and the temperature information distributed along the optical fiber can be obtained, that is, the temperature conditions inside the display panel can be understood; the display device and the temperature monitoring method thereof have a simple structure, are easy to manufacture, have high space utilization rate, good temperature monitoring accuracy, and good user experience. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in this application or related technologies, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, the drawings described below are merely embodiments of this application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0017] Figure 1 This is a schematic structural diagram of a display device according to an embodiment of the present application;

[0018] Figure 2 Schematic diagram of the cross-sectional structure of the first display panel in the embodiment of the present application;

[0019] Figure 3 Schematic diagram of the cross-sectional structure of the second display panel in the embodiment of the present application;

[0020] Figure 4 This is a schematic diagram of the arrangement of the first type of sensing optical fiber in an embodiment of the present application;

[0021] Figure 5 Schematic diagram of the cross-sectional structure of the third display panel in the embodiment of the present application;

[0022] Figure 6 Schematic diagram of the cross-sectional structure of the fourth display panel in the embodiment of the present application;

[0023] Figure 7 This is a schematic diagram of the arrangement of the second type of sensing optical fiber in an embodiment of the present application;

[0024] Figure 8 This is a schematic diagram of the arrangement of the third type of sensing optical fiber in an embodiment of the present application;

[0025] Figure 9 This is a schematic structural diagram of a photoelectric unit in an embodiment of the present application;

[0026] Figure 10 Schematic diagram of a flow chart of a temperature monitoring method for a display device in an embodiment of the present application.

[0027] Figure numerals: 1. signal processing unit; 2. photoelectric unit; 21. laser; 22. wavelength division multiplexer; 23. photodetector; 3. optical fiber; 31. transmission optical fiber; 32. sensing optical fiber; 32-1. first sensing optical fiber; 32-2. second sensing optical fiber; 4. display panel; 401. substrate; 402. driving circuit layer; 403. first electrode layer; 404. hole transport layer; 405. light-emitting layer; 406. electron transport layer; 407. second electrode layer; 408. pixel defining layer; 409. light-emitting unit; 409-1. green light-emitting unit; 409-2. red light-emitting unit; 409-3. blue light-emitting unit; 5. display area. DETAILED DESCRIPTION

[0028] In order to make the objectives, technical solutions and advantages of this application more clear, this application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0029] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should have the usual meanings understood by people with ordinary skills in the field to which this application belongs. The "first", "second" and similar words used in the embodiments of the present application do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0030] In recent years, organic light-emitting devices (OLEDs), as a new type of flat-panel display, have been gaining increasing attention. They offer active illumination, a wide color gamut, high brightness, high contrast, high resolution, wide viewing angle, fast response, low energy consumption, and flexibility. They are currently one of the mainstream information display technologies used in smart display devices. They are widely used in various mobile devices, particularly mobile devices, wearable devices, notebooks, in-vehicle displays, AR / VR (augmented reality / virtual reality), and scrolling devices.

[0031] OLEDs are highly dependent on the recombination and migration of organic carriers when emitting light, and their temperature characteristics are more pronounced, so the brightness of OLED display devices will also exhibit certain temperature characteristics. When an OLED display device is operating, the brightness of the OLED display device will also change due to factors such as ambient temperature or the device's own heat generation, which can easily cause the OLED display device to be too bright or too dark at high or low temperatures. In order to achieve stable luminous brightness over a wide temperature range, it is necessary to monitor the temperature of the OLED display device in real time, and feed the temperature monitoring results back to the signal drive unit for drive voltage compensation.

[0032] Conventional temperature monitoring of OLED display devices usually requires an external temperature sensor, which has obvious disadvantages. It makes the system more complicated and is not conducive to miniaturization, intelligence, and integration. In addition, the external temperature sensor cannot truly detect the heating of the internal structure of the display panel, and the detection is subject to errors and lags. Therefore, a display device with better temperature monitoring effect is urgently needed.

[0033] In the process of implementing this application, it was discovered that micro-nano optical fibers can be used as sensing fibers, and the sensing fibers can be integrated inside the display panel. The temperature can be measured by detecting changes in the Raman scattered light intensity in the sensing fiber, and then the OTDR (optical time-domain rflectometer) technology can be used to locate the position of the temperature change, ultimately achieving continuous measurement of the spatial distribution state of the temperature inside the OLED display panel and the temperature change information.

[0034] Below, through specific embodiments and combined Figures 1 to 10 To describe the technical solution of this application in detail.

[0035] In some embodiments of the present application, a display device is provided, such as Figure 1As shown, it includes: a display panel 4, including a display area 5, in which a plurality of light-emitting units 409 are provided; an optical fiber 3, including a connected sensing optical fiber 32 and a transmission optical fiber 31, wherein the sensing optical fiber 32 is arranged in the display panel 4, close to the light-emitting unit 409, and the transmission optical fiber 31 extends out of the display panel 4; a photoelectric unit 2, connected to the transmission optical fiber 31, for emitting excitation light to the optical fiber 3, and receiving reflected light to convert it into an electrical signal; a signal processing unit 1, electrically connected to the photoelectric unit 2, for receiving the electrical signal and analyzing it to obtain temperature information distributed along the optical fiber 3.

[0036] like Figure 1 As shown, a transparent optical fiber 3 is arranged inside the display panel 4 and close to the light-emitting unit 409, and optical fiber sensing technology is adopted, which has the advantages of anti-electromagnetic interference, small size, light weight, bendability, low cost, etc. Compared with the temperature sensor in conventional technology, the space utilization rate is higher, and the transmission optical fiber 31 and the sensing optical fiber 32 are set at different positions. The two optical fibers 3 can be optical fibers 3 with the same size and material, or optical fibers 3 with different sizes and materials. There is no specific limitation. By integrating the sensing optical fiber 32 inside the display panel 4, the sensing optical fiber 32 is always in the detected temperature field, and the temperature changes inside the OLED display panel 4 can be truly detected.

[0037] The photoelectric unit 2 and the signal processing unit 1 can be bent and bound to the back of the display panel 4 in terms of layout, further improving space utilization. The photoelectric unit 2 is used to excite and reflect light on the optical fiber 3. The intensity of Raman scattered light in the reflected light is sensitive to temperature changes. The reflected light is converted into an electrical signal and analyzed by the signal processing unit 1. The temperature corresponding to each beam of light can be determined. The OTDR technology is used to locate the position of the temperature change, thereby obtaining temperature information distributed along the optical fiber 3, that is, the temperature conditions inside the display panel 4 can be understood.

[0038] The display device can be a smart phone, notebook, car display, TV, tablet, digital camera, etc. The display device has a simple structure, is easy to manufacture, has high space utilization, good temperature monitoring accuracy, and good user experience.

[0039] In some embodiments, as Figure 2 As shown, the display panel 4 includes a substrate 401, a driving circuit layer 402 is provided on one side of the substrate 401, and the light-emitting unit 409 is provided on the side of the driving circuit layer 402 away from the substrate 401. The light-emitting unit 409 includes a first electrode layer 403, a light-emitting layer 405 and a second electrode layer 407 that are stacked. The first electrode layer 403 is arranged close to the substrate 401, and a pixel defining layer 408 is provided between adjacent light-emitting units 409.

[0040] The substrate 401, for example, includes a flexible base layer, a barrier layer and a buffer layer. The material of the flexible base layer may include one or more of PI (polyimide), PET (polyethylene terephthalate) and PC (polycarbonate); the size range of the barrier layer is 5000 angstroms to 6000 angstroms, and the size range of the buffer layer is 3500 angstroms to 4500 angstroms.

[0041] A driving circuit layer 402 is provided on one side of the substrate 401. The driving circuit layer 402 includes a plurality of pixel circuits. Each pixel circuit includes a thin film transistor (T) and a storage capacitor (C). The thin film transistor is a low-temperature polycrystalline oxide transistor or an oxide thin film transistor.

[0042] The light emitting unit 409 includes a red light emitting unit 409-2, a green light emitting unit 409-1 and a blue light emitting unit 409-3, etc. Figure 2 The area in the dotted box; the red light-emitting layer comprises a host material and a phosphorescent dopant, wherein the host material contains at least one material. When the host contains two materials, they are excimer complexes, isomers or homologues, which are beneficial to improving the utilization rate of excitons and thus improving the efficiency of the device; the green light-emitting layer comprises a host material and a phosphorescent dopant, wherein the host material contains at least two materials, which can be excimer complexes or isomers, which are beneficial to improving the utilization rate of excitons and thus improving the efficiency of the device; the blue light-emitting layer comprises a host material and a guest material, wherein the host material is at least one material containing anthracene, and the guest material is a fluorescent or phosphorescent dopant. When the host material contains two materials, the two materials are isomers or homologues, or can be excimer complexes.

[0043] The first electrode layer 403 can be an anode, and the material is a high work function electrode material, such as transparent oxide ITO, IZO; it can also be a composite electrode formed by ITO / Ag / ITO, Ag / IZO, CNT / ITO, CNT / IZO, GO / ITO, GO / IZO, etc.

[0044] The second electrode layer 407 may be a cathode, and is preferably made of a material with a low work function so as to easily inject electrons into the organic material layer, and has both good light transmittance and electrical conductivity. Its materials include: metals, metal oxides, metal alloys, such as aluminum (Al), silver (Ag), gold (Au), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium (Li), potassium (K), sodium (Na), tin (Sn), titanium (Ti), lead (Pb), samarium (Sm), yttrium (Y), indium tin oxide (ITO), magnesium silver alloy (Mg:Ag), ytterbium gold alloy (Yb:Au), ytterbium silver alloy (Yb:Ag), lithium aluminum alloy (Li:Al), lithium calcium magnesium alloy (Li:Ca:Al), etc.; and laminated materials, such as magnesium / aluminum (Mg / Al), magnesium / silver (Mg / Ag), aluminum / silver (Al / Ag), aluminum / gold (Al / Au), ytterbium / gold (Yb / Au), ytterbium / silver (Yb / Ag), calcium / magnesium (Ca / Mg), calcium / silver (Ca / Ag), barium / silver (Ba / Ag), etc., without specific limitation.

[0045] The pixel defining layer 408 is used to separate the light emitting units 409 to avoid crosstalk, and can be made of an inorganic material.

[0046] In some embodiments, as Figures 5 to 7 As shown, the orthographic projection of the transmission optical fiber 31 on the substrate 401 is a first projection, and the orthographic projection of the light emitting unit 409 on the substrate 401 is a second projection, and the first projection partially overlaps with the second projection.

[0047] The orthographic projection of the transmission optical fiber 31 on the substrate 401 is the first projection, and the orthographic projection of the light emitting unit 409 on the substrate 401 is the second projection. The first projection partially overlaps with the second projection, that is, the first projection can overlap with the second projection. Figure 5 As shown, the transmission optical fiber 31 is arranged between the light emitting layer 405 and the second electrode layer 407. Figure 6 As shown, the transmission optical fiber 31 is arranged on the side of the second electrode layer 407 away from the substrate 401 and overlaps with the light-emitting unit 409. This makes it more convenient to arrange the transmission optical fiber 31, and the measured temperature can represent the temperature of a specific light-emitting unit 409.

[0048] In some embodiments, as Figures 2 to 4 As shown, the orthographic projection of the transmission optical fiber 31 on the substrate 401 is a first projection, and the orthographic projection of the pixel definition layer 408 on the substrate 401 is a third projection, and the third projection covers the first projection.

[0049] The orthographic projection of the transmission optical fiber 31 on the substrate 401 is the first projection, and the orthographic projection of the pixel defining layer 408 on the substrate 401 is the third projection. The third projection covers the first projection, that is, the first projection does not overlap with the light emitting unit 409. Figure 2 As shown, the transmission optical fiber 31 is arranged between the pixel defining layer 408 and the second electrode layer 407. Figure 3 As shown, the transmission optical fiber 31 is arranged on the side of the second electrode layer 407 away from the substrate 401 and overlaps with the pixel definition layer 408. Such arrangement of the transmission optical fiber 31 can avoid affecting the light emitting effect of the light emitting unit 409.

[0050] In some embodiments, as Figure 2 and Figure 5 As shown, the transmission optical fiber 31 is located between the second electrode layer 407 and the light emitting layer 405, or as shown in FIG. Figure 3 and Figure 6 As shown, the transmission optical fiber 31 is located on a side of the second electrode layer 407 away from the light-emitting layer 405 .

[0051] like Figure 2 and Figure 5 As shown, the sensing optical fiber 32 is arranged under the second electrode layer 407. After the electron transport layer 406 is manufactured, the sensing optical fiber 32 is fixed on the electron transport layer 406 by micromachining technology, and then the second electrode layer 407 is manufactured; Figure 3 and Figure 6 As shown, the sensing optical fiber 32 is arranged on the second electrode layer 407. After the second electrode layer 407 is manufactured, the sensing optical fiber 32 is fixed above the second electrode layer 407 through a micromachining process. In this way, the sensing optical fiber 32 is arranged in the display panel 4, close to the light-emitting unit 409, which can truly reflect the temperature change of the light-emitting unit 409, and has little impact on the structure of the light-emitting unit 409, and has better stability.

[0052] In some embodiments, the transmission optical fiber 31 is located between the first electrode layer 403 and the light-emitting layer 405 , or the transmission optical fiber 31 is located on a side of the first electrode layer 403 away from the light-emitting layer 405 .

[0053] The transmission optical fiber 31 can also be arranged between the first electrode layer 403 and the light-emitting layer 405, or arranged on the side of the first electrode layer 403 away from the light-emitting layer 405, which is also close to the light-emitting unit 409, but may affect the subsequent film layer production of the light-emitting unit 409.

[0054] In some embodiments, the diameter of the sensing optical fiber 32 is smaller than the diameter of the transmission optical fiber 31 .

[0055] The diameter of the sensing optical fiber 32 is set to be smaller than the diameter of the transmission optical fiber 31. On the one hand, the monitoring effect of the sensing optical fiber 32 on the display panel 4 can be more accurate without increasing the thickness of the display panel 4 too much. On the other hand, the transmission optical fiber 31 can transmit signals to the photoelectric unit 2 better. The diameter of the transmission optical fiber 31 is, for example, 20μm to 30μm, and the diameter of the sensing optical fiber 32 is, for example, 0.5μm to 2μm. This avoids the sensing optical fiber 32 being too small, brittle, and easy to break, and also avoids the sensing optical fiber 32 being too large and increasing the thickness of the display panel 4 too much.

[0056] The sensing optical fiber 32, for example, is a micro-nano optical fiber, which can be produced using a high-temperature melt-drawing method. First, a high-temperature source such as an oxyhydrogen flame, a carbon dioxide laser, or an electric arc is used to heat the optical fiber 3 until it softens and melts. The melted optical fiber 3 is then stretched to obtain a micro-nano optical fiber with a diameter in the micro-nanometer range. This method can adjust the diameter of the optical fiber 3 by controlling the stretching speed and distance, allowing the production of micro-nano optical fibers 3 of various diameters to meet the needs of different applications. Micro-nano optical fibers have advantages such as low loss, low cost, and ease of mass production. As sensing optical fibers 32, they have higher sensitivity. By integrating the sensing optical fiber 32 within the display panel 4 and keeping it in the temperature field to be detected, the sensing optical fiber 32 can accurately detect temperature changes within the OLED display device.

[0057] In some embodiments, as Figure 4 and Figure 7 As shown, the sensing optical fiber 32 is located in the periphery and the middle area of ​​the display area 5 .

[0058] like Figure 4 and Figure 7 As shown, the sensing optical fibers 32 are arranged around and in the middle of the display area 5, so that the overall temperature change of the display area 5 can be monitored, which facilitates understanding of the local temperature, so as to adjust the driving voltage in a targeted manner and improve the display effect.

[0059] In some embodiments, as Figure 4 and Figure 7 As shown, the sensing optical fiber 32 includes a first sensing optical fiber 32-1 and a second sensing optical fiber 32-2 connected to each other. The first sensing optical fiber 32-1 is arranged along the periphery of the display area 5, and the second sensing optical fiber 32-2 is located in the middle of the display area 5, passes through the display area 5, and is connected to the transmission optical fiber 31.

[0060] like Figure 4 and Figure 7As shown, the sensing optical fiber 32 includes a first sensing optical fiber 32-1 and a second sensing optical fiber 32-2 that are connected. The first sensing optical fiber 32-1 is arranged along the periphery of the display area 5, and the second sensing optical fiber 32-2 is located in the middle of the display area 5, passes through the display area 5, and is connected to the transmission optical fiber 31. In this way, the overall temperature change of the display area 5 can be understood along the first sensing optical fiber 32-1 and the second sensing optical fiber 32-2, and less wiring is required, thereby reducing costs.

[0061] like Figure 4 As shown, the cross-sectional shape of the display area 5 is a rectangle. The first sensing optical fiber 32-1 can start from one corner of the rectangle, bypass the other three corners, and then connect with the second sensing optical fiber 32-2 in the middle. In this way, the temperatures of the four corners and the middle of the display area 5 can be monitored, and materials can be saved; the second sensing optical fiber 32-2 is connected to the transmission optical fiber 31, and the transmission optical fiber 31 can be bent in the middle of the display area 5 to the back of the display panel 4 to improve space utilization.

[0062] In some embodiments, as Figure 8 As shown, the sensing optical fibers 32 are arranged in a serpentine shape in the display area 5 .

[0063] The sensing optical fibers 32 are arranged in a serpentine pattern in the display area 5, so that the temperature changes at various locations in the display area 5 can be understood in more detail. Figure 8 As shown, the cross-sectional shape of the display area 5 is a rectangle, and the sensing optical fiber 32 can start from one corner of the rectangle and end at the other opposite corner, and be arranged in a serpentine shape along the length or width direction of the display area 5. Adjacent sensing optical fibers 32 can be arranged at intervals of the light-emitting units 409 to monitor the temperature changes of each light-emitting unit 409.

[0064] In some embodiments, as Figure 9 As shown, the optoelectronic unit 2 includes: a laser 21 for emitting excitation light to the optical fiber 3; a wavelength division multiplexer 22, one end of which is connected to the laser 21 and the other end is connected to the transmission optical fiber 31, for receiving reflected light and separating Raman scattered light; a photodetector 23, which is connected to the wavelength division multiplexer 22 and is used to convert the Raman scattered light into an electrical signal.

[0065] The laser 21 is the main component of the entire system that outputs optical pulses. The wavelength division multiplexer 22 is mainly responsible for filtering out Raman scattered light from the reflected light. The photodetector 23 is a device that converts optical signals into electrical signals.

[0066] Distributed fiber 3 temperature sensing utilizes anti-Stokes light from Raman scattering. The intensity of anti-Stokes light is affected by the ambient temperature, and temperature measurement is achieved by detecting changes in anti-Stokes light intensity. Optical Time Domain Reflection (OTDR) technology is then used to locate fiber 3, ultimately enabling continuous measurement of the spatial temperature distribution and temperature variation along the fiber 3. When the OLED display device is in operation, laser 21 emits pulsed laser light. Passing through wavelength division multiplexer 22, the pulsed laser light is coupled into sensing fiber 32. The pulsed laser light scatters at various points within sensing fiber 32. The intensity of the Raman scattered light in the backscattered light is related to temperature. The wavelength division multiplexer 22 separates the reflected Raman scattered light, which is converted into an electrical signal by the photodetector 23. This electrical signal is then transmitted to the signal processing unit 1, which analyzes it to obtain the temperature information to be measured. At the same time, the optical fiber 3 is positioned by using the optical time domain reflection (OTDR) technology, and finally the temperature spatial distribution state and temperature change information along the optical fiber 3 are continuously measured.

[0067] In some embodiments, a protective encapsulation layer is placed on top of the light-emitting unit 409. A black matrix and color resist blocks are placed on top of the encapsulation layer. The color resist blocks are positioned one-to-one with the light-emitting devices to adjust the light output, improve transmittance, increase light efficiency, reduce product power consumption, increase the color gamut area, and achieve a thinner and more integrated panel structure. This theoretically allows for smaller folding and curling radii, improving bending reliability. The black matrix is ​​a black, opaque material that absorbs external light, thereby enhancing contrast. The color resist blocks are optical filters that precisely select a narrow range of wavelengths to pass through while reflecting other undesirable wavelengths. They are composed of chemical dyes and resins.

[0068] In some embodiments, the storage capacitor includes a first electrode and a second electrode, and the thin film transistor includes an active layer, a gate, a source electrode, and a drain electrode.

[0069] In some embodiments, the driving circuit layer 402 includes a plurality of gate lines and a plurality of data lines distributed in an array. The plurality of gate lines and the plurality of data lines intersect with each other to form a plurality of pixel regions. A pixel circuit for one pixel is correspondingly disposed in each pixel region.

[0070] The driving circuit layer 402 may further include a control circuit configured to control the data driving subcircuit to apply a data signal and control the gate driving subcircuit to apply a scan signal. An example of the control circuit is a timing control circuit (T-con).

[0071] In some embodiments, the pixel circuit may include a driving subcircuit, a data writing subcircuit, a compensation subcircuit, and a storage subcircuit, and may further include a light emitting control subcircuit, a reset circuit, etc. as needed.

[0072] In some embodiments, the driving circuit layer 402 includes a conductive material, such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W), and alloy materials composed of the above metals; or a conductive metal oxide material, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum zinc oxide (AZO), etc.

[0073] In some embodiments, the driving circuit layer 402 includes an inorganic insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, or other silicon oxide, silicon nitride, or includes aluminum oxide, titanium nitride, or other metal nitride insulating materials; it may also include an organic insulating material, such as polyimide (PI), acrylate, epoxy resin, polymethyl methacrylate (PMMA), or other organic insulating materials.

[0074] In some embodiments, the light-emitting unit 409 includes a first electrode layer 403, a hole injection layer (HIL), a hole transport layer 404 (HTL), an electron blocking layer (EBL), a light-emitting layer 405 (EML), a hole blocking layer (HBL), an electron transport layer 406 (ETL), an electron injection layer (EIL) and a second electrode layer 407, which are stacked in sequence.

[0075] The hole injection layer can be an inorganic oxide, such as molybdenum oxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide, chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, silver oxide, tungsten oxide, manganese oxide, etc.; it can also be a dopant of a strong electron-withdrawing system, such as F4TCNQ, HATCN, etc.; P-type doping can also be performed on the hole transport material, and the thickness of this layer is 5nm to 20nm, and the hole injection layer is formed by co-evaporation.

[0076] The hole transport layer 404 material has good hole transport properties and can be an aromatic amine or carbazole material, such as NPB, TPD, BAFLP, DFLDPBi, etc.

[0077] The electron blocking layer also has good hole transport properties and can be an aromatic amine or carbazole material, such as CBP, PCzPA, etc.

[0078] The hole blocking layer and the electron transport layer 406 are generally aromatic heterocyclic compounds, such as imidazole derivatives such as benzimidazole derivatives, imidazopyridine derivatives, and benzimidazolephenanthridine derivatives; oxazine derivatives such as pyrimidine derivatives and triazine derivatives; compounds containing a nitrogen six-membered ring structure such as quinoline derivatives, isoquinoline derivatives, and phenanthroline derivatives, and also include compounds having phosphine oxide-based substituents on the heterocyclic ring, such as OXD-7, TAZ, p-EtTAZ), BPhen, BCP, etc.

[0079] The electron injection layer preferably has a material capable of transporting electrons and has the effect of injecting electrons from the cathode. It has excellent thin film forming ability and is generally an alkali metal or metal, such as LiF, Yb, Mg, Ca or their compounds.

[0080] In some embodiments, the encapsulation layer includes a first inorganic layer, an organic layer, and a second inorganic layer stacked in layers; a touch layer is provided between the encapsulation layer and the black matrix; and a protective layer is provided on the side of the color resist block away from the base substrate 401 .

[0081] The encapsulation layer includes a first inorganic layer, an organic layer, and a second inorganic layer, which play the role of isolating water and oxygen and making it flat. The first inorganic layer and the second inorganic layer may include at least one inorganic insulating material selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride and silicon oxynitride; the organic layer can reduce the internal stress of the first inorganic layer and the second inorganic layer. The organic layer may include a polymer material, including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, HMDSO, acrylic resin or any combination thereof.

[0082] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. Within the scope of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0083] In the embodiments of the present application, the first electrode may be the second electrode, the second electrode may be the first electrode, or the first electrode may be the first electrode and the second electrode may be the second electrode. In cases where transistors with opposite polarities are used or the direction of current changes during circuit operation, the functions of the "first electrode" and the "second electrode" may be interchanged. Therefore, in this specification, the "first electrode" and the "second electrode" may be interchanged.

[0084] In the embodiments of the present application, "film" and "layer" can be interchanged. For example, sometimes "conductive layer" can be replaced with "conductive film". Similarly, sometimes "insulating film" can be replaced with "insulating layer". The proportions of the drawings in the embodiments of the present application can be used as a reference in the actual process, but are not limited to this. For example: the width-to-length ratio of the channel, the thickness and spacing of each film layer can be adjusted according to actual needs. The number of pixels in the display panel 4 and the number of sub-pixels in each pixel are not limited to the numbers shown in the figure. The drawings described in the embodiments of the present application are only structural schematic diagrams, and a method in the embodiments of the present application is not limited to the shapes or values ​​shown in the drawings.

[0085] In the embodiments of the present application, the triangles, rectangles, trapezoids, pentagons or hexagons are not in the strict sense, but may be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances, and there may be chamfers, arc edges and deformations.

[0086] In addition, when details are set forth to describe exemplary embodiments of the present application, it will be apparent to those skilled in the art that the present application embodiments can be implemented without these details or with variations in these details. Therefore, these descriptions should be considered illustrative rather than restrictive.

[0087] In some embodiments of the present application, a method for monitoring the temperature of a display device is provided, using the display device described in any of the above embodiments, such as Figure 10 As shown, the method includes: S1, emitting excitation light to the optical fiber 3 through the photoelectric unit 2; S2, receiving the reflected light through the optical fiber 3 and separating the Raman scattered light through the photoelectric unit 2; S3, converting the Raman scattered light into an electrical signal through the photoelectric unit 2; S4, parsing the electrical signal through the signal processing unit 1 to obtain temperature information distributed along the optical fiber 3.

[0088] In some embodiments of the present application, a method for manufacturing a display device is provided, including: setting a sensing optical fiber 32 in the display panel 4, the sensing optical fiber 32 is connected to the transmission optical fiber 31, the transmission optical fiber 31 extends out of the display panel 4 and is connected to the photoelectric unit 2, and the signal processing unit 1 is electrically connected to the photoelectric unit 2.

[0089] The "patterning process" referred to in the embodiments of this application includes processes such as photoresist coating, mask exposure, development, etching, and photoresist stripping for metal materials, inorganic materials, or transparent conductive materials, and includes processes such as organic material coating, mask exposure, and development for organic materials. Deposition can be performed by any one or more of sputtering, evaporation, and chemical vapor deposition; coating can be performed by any one or more of spray coating, spin coating, and inkjet printing; and etching can be performed by any one or more of dry etching and wet etching, without limitation.

[0090] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. Within the scope of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0091] In addition, for simplicity of description and discussion, and in order not to make the embodiment of the application difficult to understand, the known power supply / ground connection with other components may or may not be shown in the accompanying drawings provided. In addition, the device can be shown in the form of a block diagram to avoid making the embodiment of the application difficult to understand, and this also takes into account the following fact, that is, the details of the embodiment of these block diagram devices are highly dependent on the platform to be implemented in the embodiment of the application (that is, these details should be fully within the scope of understanding of those skilled in the art). When specific details are set forth to describe the exemplary embodiments of the application, it will be apparent to those skilled in the art that the embodiment of the application can be implemented without these specific details or when these specific details are changed. Therefore, these descriptions should be considered to be illustrative rather than restrictive.

[0092] Although the present application has been described in conjunction with specific embodiments of the present application, many substitutions, modifications, and variations of these embodiments will be apparent to those skilled in the art based on the foregoing description. The present application embodiments are intended to encompass all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application embodiments should be included within the scope of protection of the present application.

Claims

1. A display device, characterized in that: include: The display panel comprises a display area, wherein a plurality of light-emitting units are provided in the display area; Optical fibers, including connected sensing fibers and transmission fibers, wherein the sensing fibers are disposed within the display panel and adjacent to the light-emitting unit, and the transmission fibers extend out of the display panel; a photoelectric unit connected to the transmission optical fiber, configured to emit excitation light to the optical fiber and receive reflected light and convert it into an electrical signal; A signal processing unit is electrically connected to the photoelectric unit and is used to receive the electrical signal and analyze it to obtain temperature information distributed along the optical fiber.

2. The display device according to claim 1, wherein The display panel includes a substrate, a driving circuit layer is provided on one side of the substrate, the light-emitting unit is provided on the side of the driving circuit layer away from the substrate, the light-emitting unit includes a first electrode layer, a light-emitting layer and a second electrode layer that are stacked, the first electrode layer is arranged close to the substrate, and a pixel defining layer is provided between adjacent light-emitting units.

3. The display device according to claim 2, wherein: The orthographic projection of the transmission optical fiber on the substrate is a first projection, the orthographic projection of the light emitting unit on the substrate is a second projection, and the first projection partially overlaps with the second projection.

4. The display device according to claim 2, wherein: The orthographic projection of the transmission optical fiber on the substrate is a first projection, the orthographic projection of the pixel defining layer on the substrate is a third projection, and the third projection covers the first projection.

5. The display device according to claim 2, wherein The transmission optical fiber is located between the second electrode layer and the light-emitting layer, or the transmission optical fiber is located on a side of the second electrode layer away from the light-emitting layer.

6. The display device according to claim 1, wherein The diameter of the sensing optical fiber is smaller than the diameter of the transmission optical fiber.

7. The display device according to claim 1, wherein The sensing optical fibers are located in the periphery and the middle area of ​​the display area.

8. The display device according to claim 7, wherein: The sensing optical fiber includes a first sensing optical fiber and a second sensing optical fiber connected to each other. The first sensing optical fiber is arranged along the periphery of the display area, and the second sensing optical fiber is located in the middle of the display area, passes through the display area, and is connected to the transmission optical fiber.

9. The display device according to claim 1, wherein The photoelectric unit comprises: a laser, configured to emit excitation light toward the optical fiber; a wavelength division multiplexer, one end of which is connected to the laser and the other end of which is connected to the transmission optical fiber, for receiving the reflected light and separating the Raman scattered light; A photodetector is connected to the wavelength division multiplexer and is used to convert the Raman scattered light into an electrical signal.

10. A method for monitoring the temperature of a display device, characterized in that: Using the display device according to any one of claims 1 to 9, the method comprises: emitting excitation light to the optical fiber through the photoelectric unit; receiving the reflected light from the optical fiber through the optoelectronic unit and separating the Raman scattered light; converting the Raman scattered light into an electrical signal by the photoelectric unit; The signal processing unit analyzes the electrical signal to obtain temperature information distributed along the optical fiber.

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