Display panel

By introducing a color conversion component into the display panel, blue light is converted into green light, which solves the problem of local color shift caused by increasing the intensity of green light in traditional display panels, improves fingerprint recognition sensitivity, and extends the lifespan of green light-emitting devices.

CN118870914BActive Publication Date: 2025-11-28WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202410842711.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-06-27
Publication Date
2025-11-28
Estimated Expiration
2044-06-27

AI Technical Summary

Technical Problem

In the fingerprint recognition process, traditional organic light-emitting display panels have low light transmittance. In order to improve the fingerprint recognition sensitivity, the luminous intensity of the green light-emitting device is increased, which leads to local color shift problems and affects the display effect.

Method used

Introducing a color conversion component into the display panel improves the fingerprint recognition sensitivity of the photosensitive device by converting blue light into green light, without increasing the luminous intensity of the green light-emitting device. Quantum dots or fluorescent materials are used as the color conversion component.

Benefits of technology

Without increasing the luminous intensity of the green light-emitting device, the fingerprint recognition sensitivity of the photosensitive device was improved, the lifespan of the green light-emitting device was extended, local color shift was alleviated, and the display effect was improved.

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Abstract

The application discloses a display panel, which comprises a substrate, a thin film transistor device layer, a light-emitting device layer, a light-sensing device and a color conversion component. The thin film transistor device layer is arranged on one side of the substrate. The light-emitting device layer is arranged on the side of the thin film transistor device layer away from the substrate and is electrically connected with the thin film transistor device layer. The light-emitting device layer comprises a plurality of light-emitting devices. The light-sensing device is arranged on the side of the substrate close to the thin film transistor device layer and is electrically connected with the thin film transistor device layer. The light-sensing device is located between two adjacent light-emitting devices. The color conversion component is arranged on the side of the light-sensing device away from the substrate. The orthographic projection of the color conversion component on the substrate overlaps with the orthographic projection of the light-sensing device on the substrate. The application can improve the display effect.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel. BACKGROUND

[0002] With the continuous development of display technology, organic light emitting diode (OLED) as a self-luminous display device has been widely used in the display field. The traditional organic light emitting display panel integrates an optical fingerprint identification module with a fingerprint identification function. In the process of fingerprint identification, a high-brightness green light source is instantaneously emitted to irradiate the finger, and the reflected light enters the fingerprint sensor through the finger. The fingerprint sensor identifies the fingerprint according to the different reflection intensities of the ridge lines and valley lines of the fingerprint.

[0003] However, in the traditional organic light emitting display panel, due to the low light transmittance of the panel, in order to improve the sensitivity of fingerprint identification, the luminous intensity of the green light emitting device is increased. After a long period of use, the aging degree of the green light emitting device in the fingerprint identification area is more serious than that of the blue light emitting device and the red light emitting device, which is prone to local color deviation and affects the display effect.

[0004] Therefore, it is necessary to propose a new technical scheme to solve the above technical problems. SUMMARY

[0005] The purpose of the present application is to provide a display panel to improve the display effect.

[0006] To solve the above problems, the technical scheme of the present application is as follows:

[0007] The present application provides a display panel, comprising:

[0008] a substrate;

[0009] a thin film transistor device layer arranged on one side of the substrate;

[0010] a light emitting device layer arranged on a side of the thin film transistor device layer away from the substrate and electrically connected with the thin film transistor device layer, the light emitting device layer comprising a plurality of light emitting devices;

[0011] a light sensing device arranged on a side of the substrate close to the thin film transistor device layer and electrically connected with the thin film transistor device layer, a projection of the light sensing device on the substrate being located between projections of two adjacent light emitting devices on the substrate; and

[0012] a color conversion member disposed on a side of the light sensing device distal to the substrate, a projection of the color conversion member on the substrate overlapping a projection of the light sensing device on the substrate.

[0013] In an embodiment of the present application, the light emitting device and the light sensing device are disposed in the same layer.

[0014] In an embodiment of the present application, the display panel further comprises a pixel defining layer disposed on a side of the thin film transistor device layer distal to the substrate, a surface of the pixel defining layer distal to the substrate being provided with a plurality of first openings, and one of the first openings being provided with one of the light emitting devices;

[0015] The surface of the pixel defining layer distal to the substrate is further provided with a plurality of second openings, and one of the second openings is provided with one of the light sensing devices.

[0016] In an embodiment of the present application, the light emitting device comprises a red light emitting device, a green light emitting device, and a blue light emitting device, and one of the first openings is provided with one of the red light emitting device, the green light emitting device, and the blue light emitting device.

[0017] The color conversion member comprises a color conversion film for converting blue light into green light.

[0018] At least part of the color conversion film is disposed between the blue light emitting device and the green light emitting device, and a projection of the color conversion film on the substrate is located between a projection of the blue light emitting device on the substrate and a projection of the green light emitting device on the substrate.

[0019] In an embodiment of the present application, the color conversion film covers a surface of the light sensing device distal to the substrate.

[0020] In an embodiment of the present application, the display panel further comprises:

[0021] a first anode disposed on a surface of the thin film transistor device layer distal to the substrate, and the first opening exposing part of the first anode;

[0022] a second anode disposed on a surface of the thin film transistor device layer distal to the substrate, and the second opening exposing part of the second anode;

[0023] a first common layer covering a surface of the pixel defining layer away from the substrate, a first portion of the first common layer being located in the first opening and overlapping a surface of the first anode away from the substrate, a second portion of the first common layer being located in the second opening and overlapping a surface of the second anode away from the substrate;

[0024] an organic light emitting layer located on a surface of the first portion of the first common layer away from the substrate;

[0025] a light sensing layer located on a surface of the second portion of the first common layer away from the substrate;

[0026] a second common layer, a first portion of the second common layer covering a surface of the organic light emitting layer away from the substrate, a second portion of the second common layer covering a surface of the light sensing layer away from the substrate;

[0027] wherein the first anode, the first portion of the first common layer, the organic light emitting layer and the first portion of the second common layer form the light emitting device, the second anode, the second portion of the first common layer, the light sensing layer and the second portion of the second common layer form the light sensing device, and the organic light emitting layer and the light sensing layer are located in the same layer.

[0028] In an embodiment of the present application, the first common layer comprises:

[0029] a hole injection layer covering a surface of the pixel defining layer away from the substrate, a first portion of the hole injection layer being located in the first opening and overlapping a surface of the first anode away from the substrate, a second portion of the hole injection layer being located in the second opening and overlapping a surface of the second anode away from the substrate; and

[0030] a hole transport layer covering a surface of the hole injection layer away from the substrate, a first portion of the hole transport layer being located in the first opening and overlapping the first portion of the hole injection layer, a second portion of the hole transport layer being located in the second opening and overlapping the second portion of the hole injection layer, wherein the organic light emitting layer is located on a surface of the first portion of the hole transport layer away from the substrate, and at least a portion of the light sensing layer is located on a surface of the second portion of the hole transport layer away from the substrate;

[0031] the second common layer comprises:

[0032] an electron transport layer covering a surface of the organic light emitting layer away from the substrate and a surface of the light sensing layer away from the substrate;

[0033] an electron injection layer covering a surface of the electron transport layer away from the substrate; and

[0034] a cathode layer covering a surface of the electron injection layer away from the substrate.

[0035] In an embodiment of the present application, the material of the pixel defining layer is a light shielding material.

[0036] In an embodiment of the present application, the display panel further comprises:

[0037] a first inorganic encapsulation layer covering a side of the light emitting device layer away from the substrate;

[0038] an organic encapsulation layer covering a side of the first inorganic encapsulation layer away from the substrate; and

[0039] a second inorganic encapsulation layer covering a side of the organic encapsulation layer away from the substrate;

[0040] The color conversion member comprises at least one color conversion film, at least one of the color conversion films is arranged on a side of the first inorganic encapsulation layer away from the substrate, and a projection of an edge of the color conversion film on the substrate is located on a periphery of a projection of an edge of the light sensing device on the substrate.

[0041] In an embodiment of the present application, at least one of the color conversion films is arranged between the first inorganic encapsulation layer and the organic encapsulation layer; and / or,

[0042] at least one of the color conversion films is arranged between the organic encapsulation layer and the second inorganic encapsulation layer; and / or,

[0043] at least one of the color conversion films is arranged on a side of the second inorganic encapsulation layer away from the substrate.

[0044] In this application, a photosensitive device is used to convert light signals into electrical signals. A color conversion component is disposed on the side of the photosensitive device away from the substrate. During fingerprint recognition, the light emitted by the light-emitting device is reflected by the finger and then incident on the color conversion component. The color conversion component can convert the first color light into the second color light, thereby increasing the intensity of the second color light. After the second color light enters the photosensitive device, the fingerprint recognition sensitivity of the photosensitive device can be improved. Taking blue light as the first color light and green light as the second color light as an example, compared with the traditional display panel's solution of increasing the luminous intensity of the green light-emitting device to improve fingerprint recognition sensitivity, this application improves the fingerprint recognition sensitivity of the photosensitive device without increasing the luminous intensity of the green light-emitting device by setting the color conversion component. Since the luminous intensity of the green light-emitting device in this application is lower than that of the green light-emitting device in the traditional display panel, it improves the problem that the aging rate of the green light-emitting device is faster than that of the blue and red light-emitting devices after long-term cumulative use, alleviates the phenomenon of local color shift, and improves the display effect. Attached Figure Description

[0045] Figure 1 This is a schematic diagram of a first embodiment of the display panel of this application;

[0046] Figure 2 This is a schematic diagram of a second embodiment of the display panel of this application;

[0047] Figure 3 This is a schematic diagram of a third embodiment of the display panel of this application;

[0048] Figure 4 This is a schematic diagram of a fourth embodiment of the display panel of this application;

[0049] Figure 5 This is a schematic diagram of the fifth embodiment of the display panel of this application;

[0050] Figure 6 This is a schematic diagram of the sixth embodiment of the display panel of this application;

[0051] Figure 7 This is a schematic diagram of the seventh embodiment of the display panel of this application;

[0052] Figure 8 This is a schematic diagram of the eighth embodiment of the display panel of this application;

[0053] Figure 9 This is a schematic diagram of the ninth embodiment of the display panel of this application;

[0054] Figure 10 This is a schematic diagram of the tenth embodiment of the display panel of this application. Detailed Implementation

[0055] The meanings of the terms used in the specification and claims correspond to the meanings commonly understood by those of ordinary skill in the art to which the present application pertains. The terms used in the specification and claims are only for the purpose of facilitating the description and understanding of the present application, and are not intended to limit the present application to the narrow interpretation of the specific terms used in the specification and claims.

[0056] In a conventional display panel, in order to improve the fingerprint recognition sensitivity of the light sensing device, the light emitting intensity of the light emitting device is usually increased without setting a color conversion member. After the light emitting intensity of the light emitting device is increased, the light intensity of the light of the preset wavelength incident on the light sensing device is increased, thereby achieving the effect of improving the fingerprint recognition sensitivity of the light sensing device. However, with the increase of the light emitting intensity of the light emitting device, the service life of the light emitting device is also reduced. After long-term use, local color deviation problems occur, affecting the display effect.

[0057] Please refer to Figure 1 The present application provides a display panel 100, which comprises a substrate 10, a thin film transistor device layer 20, a light emitting device layer 40, a light sensing device 50 and a color conversion member 60. The thin film transistor device layer 20 is arranged on one side of the substrate 10. The light emitting device layer 40 is arranged on the side of the thin film transistor device layer 20 away from the substrate 10 and is electrically connected with the thin film transistor device layer 20. The light emitting device layer 40 comprises a plurality of light emitting devices 41. The light sensing device 50 is arranged on the side of the substrate 10 close to the thin film transistor device layer 20 and is electrically connected with the thin film transistor device layer 20. The orthographic projection of the light sensing device 50 on the substrate 10 is located between the orthographic projections of two adjacent light emitting devices 41 on the substrate 10. The color conversion member 60 is arranged on the side of the light sensing device 50 away from the substrate 10. The orthographic projection of the color conversion member 60 on the substrate 10 overlaps with the orthographic projection of the light sensing device 50 on the substrate 10.

[0058] In the present application, the light sensing device 50 is used to convert the light signal into an electrical signal. The light sensing device 50 is provided with a color conversion member 60 on the side away from the substrate 10. During the process of fingerprint identification, the light emitted by the light emitting device 41 is reflected by the finger and then shoots towards the color conversion member 60. The color conversion member 60 can convert the first color light into the second color light, thereby improving the light intensity of the second color light. After the second color light enters the light sensing device 50, the fingerprint identification sensitivity of the light sensing device 50 can be improved. Taking the first color light as blue light and the second color light as green light as an example, compared with the scheme of improving the fingerprint identification sensitivity by increasing the light intensity of the green light emitting device in the conventional display panel, the present application improves the fingerprint identification sensitivity of the light sensing device 50 by setting the color conversion member 60 without increasing the light intensity of the green light emitting device 411. Since the light intensity of the green light emitting device 411 in the present application is lower than that of the green light emitting device in the conventional display panel, the problem that the aging speed of the green light emitting device 411 is faster than that of the blue light emitting device 412 and the red light emitting device is improved, the phenomenon of local color cast is alleviated, and the display effect is improved.

[0059] In an embodiment, the light sensing device 50 is used to convert the light signal of green light (light with a wavelength ranging from 500 nanometers to 560 nanometers) into an electrical signal, thereby realizing fingerprint identification. In order to improve the sensitivity of the light sensing device 50, without increasing the light intensity of the green light emitting device 411, the color conversion member 60 is configured to convert blue light (light with a wavelength ranging from 450 nanometers to 480 nanometers) into green light. During the process of fingerprint identification, the blue light emitted by the blue light emitting device 412 is reflected by the finger and then enters the color conversion member 60 and is converted into green light. Without changing the light intensity of the green light emitting device 411, the green light intensity entering the light sensing device 50 is increased, thereby improving the sensitivity of fingerprint identification. Since it is not necessary to increase the light intensity of the green light emitting device 411, compared with the conventional display panel, the service life of the green light emitting device 411 can be prolonged, thereby improving the color cast and improving the display effect.

[0060] In this embodiment, the color conversion member 60 is used to convert blue light into green light. The material of the color conversion member 60 includes one of quantum dot material and fluorescent material.

[0061] The quantum dot material is composed of binary compounds, and the photoelectric properties of the quantum dots change with the size and shape. The diameter of the green quantum dots and the blue quantum dots is in the range of 2-3 nm, and the specific color and size depend on the exact composition of the quantum dots. The green quantum dots are used to convert blue light with a wavelength of 450-480 nm into green light with a wavelength in the range of 500-560 nm. Preferably, the green quantum dots are used to convert blue light with a wavelength of 460-470 nm into green light with a wavelength of 520-535 nm. The quantum dot material includes at least one of indium phosphide (InP) quantum dot material, cadmium selenide (CdSe) quantum dot material, quantum dot material of a mixture of cadmium sulfide (CdS) and cadmium selenide (CdSe), and perovskite quantum dot material.

[0062] The fluorescent material includes at least one of the fluorescent material of the Red Lumogen F305 (perylene derivative) series, the fluorescent material of the Alexa Fluor 430 series, and the fluorescent material of the Lucifer yellow series.

[0063] In another embodiment, the light sensing device 50 is used for converting the light signal of green light into an electrical signal, and the color conversion component 60 is used for converting the light of non-green light into green light, thereby improving the sensitivity of the light sensing device 50. Optionally, the material of the color conversion component 60 includes one of the up-conversion material, the down-conversion material, and the fluorescent material. The up-conversion material is excited by low-energy light to emit high-energy light, i.e., the light with a longer wavelength and a lower frequency is used to excite the up-conversion material to emit light with a shorter wavelength and a higher frequency. The down-conversion material refers to a material that can emit two or more low-energy photons after absorbing one high-energy photon of ultraviolet light.

[0064] In yet another embodiment, the light sensing device 50 is used for converting the light signal of blue light into an electrical signal, and the color conversion component 60 is used for converting the light of non-blue light into blue light, thereby improving the sensitivity of the light sensing device 50. Optionally, the material of the color conversion component 60 includes one of the up-conversion material, the down-conversion material, and the fluorescent material.

[0065] It should be noted that the light sensing device 50 used for under-screen fingerprint identification in the display panel 100 generally adopts a design mainly using green light and supplemented by blue light. Among the red light emitting device, the green light emitting device 411, and the blue light emitting device 412, the green light emitting device 411 has a high light emitting intensity. The green light emitted by the green light emitting device 411 has a high light intensity reflected from the fingerprint identification area, which can improve the fingerprint identification sensitivity. The reason why red light is not used is that the light irradiates the mobile phone, and the human body blood, flesh tissue, etc. will reflect other red light spectrum, which will interfere with the fingerprint identification.

[0066] Optionally, the display panel 100 further comprises a red light filter layer, which is arranged on the side of the color conversion component 60 away from the light sensing device 50, and is used for filtering red light and removing the influence of red light spectrum, so as to improve the accuracy of fingerprint identification.

[0067] Optionally, the thin film transistor device layer 20 comprises a buffer layer, a plurality of thin film transistors, and an interlayer dielectric layer. The buffer layer is arranged on a surface of the substrate 10. The plurality of thin film transistors are arranged on a surface of the buffer layer away from the substrate 10. The interlayer dielectric layer covers a surface of the thin film transistors away from the substrate 10. The light emitting device 41 is electrically connected to one of the thin film transistors, and the light sensing device 50 is electrically connected to another thin film transistor.

[0068] Optionally, the display panel 100 further comprises a planarization layer 30, which is arranged between the thin film transistor device layer 20 and the light emitting layer. The planarization layer 30 can improve the flatness of the side of the thin film transistor device layer 20 away from the substrate 10, so as to improve the light extraction efficiency of the display panel 100.

[0069] Optionally, the display panel 100 further comprises an encapsulation layer 80, which covers the side of the light emitting device layer 40 away from the substrate 10.

[0070] Optionally, the encapsulation layer 80 comprises a first inorganic encapsulation layer 81, an organic encapsulation layer 82, and a second inorganic encapsulation layer 83. The first inorganic encapsulation layer 81 covers the side of the light emitting device layer 40 away from the substrate 10. The organic encapsulation layer 82 covers the side of the first inorganic encapsulation layer 81 away from the substrate 10. The second inorganic encapsulation layer 83 covers the side of the organic encapsulation layer 82 away from the substrate 10. The three-layer encapsulation layer 80 can prevent water and oxygen from the outside from invading the light emitting device layer 40 through the encapsulation layer 80, and improve the encapsulation effect of the display panel 100 while realizing the bending function of the encapsulation layer 80.

[0071] Optionally, the light emitting device 41 and the light sensing device 50 are arranged in different layers.

[0072] Optionally, referring to Figure 2 , the light sensing device 50 is arranged between the buffer layer and the substrate 10. Alternatively, in some other embodiments, the light sensing device 50 is arranged between the buffer layer and the interlayer dielectric layer.

[0073] Optionally, referring to Figure 3 , the light sensing device 50 is arranged between the interlayer dielectric layer and the planarization layer 30.

[0074] In the above embodiments, the light sensing device 50 is arranged in the thin film transistor device layer 20. Optionally, the material of the light sensing device 50 includes silicon. The light sensing device 50 can be manufactured synchronously with the thin film transistor device layer 20, so that the light sensing device 50 can be completed together with the process of the thin film transistor device layer 20, thereby saving the number of masks and reducing the production cost. At the same time, since the light sensing device 50 is integrated in the thin film transistor device layer 20, the overall thickness of the display panel 100 can be reduced.

[0075] Optionally, the light sensing device 50 is arranged on the side of the encapsulation layer 80 away from the substrate 10, and the color conversion member 60 is arranged on the side of the light sensing device 50 away from the substrate 10. In this embodiment, the number of film layers through which the reflected light of the fingerprint reaches the light sensing device 50 is reduced, thereby reducing the light attenuation of the reflected light of the fingerprint and improving the light intensity of the light received by the light sensing device 50, thereby improving the sensitivity and accuracy of the light sensing device 50.

[0076] Optionally, the light emitting device 41 is arranged in the same layer as the light sensing device 50. The light emitting device 41 is arranged on the side of the thin film transistor device layer 20 away from the substrate 10, and the light sensing device 50 is arranged on the side of the thin film transistor device layer 20 away from the substrate 10.

[0077] Optionally, referring to Figure 4 , the light emitting device 41 is arranged on the surface of the thin film transistor device layer 20 away from the substrate 10, and the light sensing device 50 is arranged on the surface of the thin film transistor device layer 20 away from the substrate 10. The color conversion member 60 is arranged on the surface of the light sensing device 50 away from the substrate 10. The design of the color conversion member 60 closely adhering to the light entering side of the light sensing device 50 can maximize the conversion of part of the light of non-pre-set wavelength into light of pre-set wavelength, thereby improving the light intensity of the light of pre-set wavelength. Due to the enhancement of the light of pre-set wavelength, after the light of pre-set wavelength enters the light sensing device 50, the fingerprint recognition sensitivity of the light sensing device 50 can be improved. Since the fingerprint recognition sensitivity of the light sensing device 50 is improved, the light emitting intensity of the light emitting device 41 can be reduced, thereby prolonging the service life of the light emitting device 41, alleviating the phenomenon of local color deviation, and improving the display effect.

[0078] Optionally, the material of the light sensing device 50 includes organic photoelectric conversion material. The organic photoelectric conversion material includes small-molecule organic polymer material, such as PBDB-T and the like. The organic photoelectric conversion material is used to convert light signals into electrical signals. Optionally, the light sensing device 50 can be manufactured synchronously with the light emitting device layer 40. Since the light sensing device 50 is arranged in the same layer as the light emitting device 41, the material of the light sensing device 50 can be arranged in the common layer of the light emitting device layer 40, which can reduce the thickness of the display panel 100 and save the number of masks and reduce the production cost.

[0079] Optionally, the display panel 100 further comprises a pixel defining layer 70. The pixel defining layer 70 is arranged on the side of the thin film transistor device layer 20 away from the substrate 10. A surface of the pixel defining layer 70 away from the substrate 10 is provided with a plurality of first openings 71. One light emitting device 41 is arranged in one first opening 71. The surface of the pixel defining layer 70 away from the substrate 10 is further provided with a plurality of second openings 72. One light sensing device 50 is arranged in one second opening 72.

[0080] Optionally, the light emitting device 41 comprises a red light emitting device 41, a green light emitting device 41 and a blue light emitting device 41. One of the red light emitting device, the green light emitting device 41 and the blue light emitting device 41 is arranged in one first opening 71.

[0081] Optionally, the display panel 100 further comprises a color conversion component 60. The color conversion component 60 is arranged on the side of the pixel defining layer 70 away from the substrate 10. The color conversion component 60 is arranged in the first opening 71 and the second opening 72. Figure 4 In the embodiment, the light emitting device 41 and the light sensing device 50 are arranged in the same layer. The light emitted by the light emitting device 41 passes through the color conversion component 60 and reaches the light sensing device 50 after being reflected by the finger, so as to realize the fingerprint identification. In the embodiment, since the light emitting device 41 and the light sensing device 50 are arranged in the same layer, the light sensing device 50 can be evaporated at the same time when the light emitting device 41 is evaporated by evaporation, which can save the number of masks and reduce the production cost. On the other hand, since the light emitting device 41 and the light sensing device 50 are arranged in the same layer, the light sensing device 50 does not need to be provided with an additional film layer, which reduces the thickness of the display panel 100.

[0082] Optionally, the material of the pixel defining layer 70 is a light shielding material. The pixel defining layer 70 is a BPDL (Black Pixel Define Layer). In the conventional display panel, the material of the pixel defining layer 70 is a transparent material. Part of the light emitted by the light emitting device 41 will pass through the transparent pixel defining layer 70 and enter the light sensing device 50, which causes the light signal interference, affects the conversion of the photoelectric signal, and thus affects the sensitivity of the fingerprint identification.

[0083] Optionally, the display panel 100 further comprises a color conversion component 60. The color conversion component 60 is arranged on the side of the pixel defining layer 70 away from the substrate 10. The color conversion component 60 is arranged in the first opening 71 and the second opening 72. Figure 5The display panel 100 further comprises a first anode 91, a second anode 92, a first common layer 93, an organic light emitting layer 94, a light sensing layer 95, and a second common layer 96. The first anode 91 is disposed on a surface of the thin film transistor device layer 20 away from the substrate 10, and a portion of the first anode 91 is exposed by the first opening 71. The second anode 92 is disposed on a surface of the thin film transistor device layer 20 away from the substrate 10, and a portion of the second anode 92 is exposed by the second opening 72. The first common layer 93 covers a surface of the pixel defining layer 70 away from the substrate 10, a first portion of the first common layer 93 is located in the first opening 71 and overlaps a surface of the first anode 91 away from the substrate 10, and a second portion of the first common layer 93 is located in the second opening 72 and overlaps a surface of the second anode 92 away from the substrate 10. The organic light emitting layer 94 is disposed on a surface of the first portion of the first common layer 93 away from the substrate 10. The light sensing layer 95 is disposed on a surface of the second portion of the first common layer 93 away from the substrate 10. A first portion of the second common layer 96 covers a surface of the organic light emitting layer 94 away from the substrate 10, and a second portion of the second common layer 96 covers a surface of the light sensing layer 95 away from the substrate 10. The first anode 91, the first portion of the first common layer 93, the organic light emitting layer 94, and the first portion of the second common layer 96 form the light emitting device 41, the second anode 92, the second portion of the first common layer 93, the light sensing layer 95, and the second portion of the second common layer 96 form the light sensing device 50, and the organic light emitting layer 94 and the light sensing layer 95 are disposed in the same layer.

[0084] In the embodiment, the organic light emitting layer 94 and the light sensing layer 95 are disposed in the same layer, so that the organic light emitting layer 94 can be manufactured at the same time as the organic light emitting layer 94 is manufactured. On the one hand, the overall thickness of the display panel 100 can be reduced, and on the other hand, the number of masks used to manufacture the display panel 100 can be reduced, thereby reducing the production cost.

[0085] Optionally, the material of the organic light emitting layer 94 comprises a red organic light emitting material, a green organic light emitting material, and a blue organic light emitting material.

[0086] Optionally, the material of the light sensing layer 95 comprises an organic photoelectric conversion material. The organic photoelectric conversion material comprises a small-molecule organic polymer material, such as PBDB-T and the like. The light sensing layer 95 is used to convert a light signal into an electrical signal.

[0087] Optionally, the first common layer 93 comprises a hole injection layer 931 and a hole transport layer 932. The hole injection layer 931 covers a surface of the pixel defining layer 70 away from the substrate 10. A first portion of the hole injection layer 931 is located in the first opening 71 and overlaps a surface of the first anode 91 away from the substrate 10. A second portion of the hole injection layer 931 is located in the second opening 72 and overlaps a surface of the second anode 92 away from the substrate 10. The hole transport layer 932 covers a surface of the hole injection layer 931 away from the substrate 10. A first portion of the hole transport layer 932 is located in the first opening 71 and overlaps the first portion of the hole injection layer 931. A second portion of the hole transport layer 932 is located in the second opening 72 and overlaps the second portion of the hole injection layer 931. The organic light emitting layer 94 is disposed on a surface of the first portion of the hole transport layer 932 away from the substrate 10. At least a portion of the light sensing layer 95 is disposed on a surface of the second portion of the hole transport layer 932 away from the substrate 10.

[0088] Optionally, the second common layer 96 comprises an electron transport layer 961, an electron injection layer 962 and a cathode layer 963. The electron transport layer 961 covers a surface of the organic light emitting layer 94 away from the substrate 10 and a surface of the light sensing layer 95 away from the substrate 10. The electron injection layer 962 covers a surface of the electron transport layer 961 away from the substrate 10. The cathode layer 963 covers a surface of the electron injection layer 962 away from the substrate 10.

[0089] As can be seen from the above, the light sensing layer 95 and the organic light emitting layer 94 are disposed in the same layer, and the light sensing layer 95 and the organic light emitting layer 94 share the first common layer 93 and the second common layer 96. Compared with the solution in which the light sensing layer 95 and the organic light emitting layer 94 are disposed in different layers, the light sensing layer 95 and the organic light emitting layer 94 can make the most of the first common layer 93 and the second common layer 96, and the light sensing layer 95 does not need a new common layer, thereby reducing the number of masks needed for producing the display panel 100 and reducing the production cost.

[0090] Optionally, please refer to Figure 7The light emitting device 41 and the light sensing device 50 are arranged in the same layer. The first anode 91 and the second anode 92 are arranged on the planar layer 30 with a spacing. In the light emitting device 41, the first anode 91, the first common layer 93, the light emitting layer 94 and the second common layer 96 form a complete circuit loop. In the light sensing device 50, the second anode 92, the first common layer 93, the light sensing layer 95, the second common layer 96 and the second common layer 96 form a complete circuit loop. In the embodiment, the first common layer 93 includes a hole injection layer 931 and a hole transport layer 932. The second common layer 96 includes an electron transport layer 961, an electron injection layer 962 and a cathode layer 963. The light sensing layer 95 and the light emitting layer 94 are arranged in the same film layer. Optionally, the thin film transistor device layer 20 includes a plurality of thin film transistors. The first anode 91 and the second anode 92 are electrically connected to different thin film transistors respectively. The first anode 91 is electrically connected to the drain of one thin film transistor through the planar layer 30, so as to electrically connect the light emitting layer 94 and the thin film transistor device layer 20. The second anode 92 is arranged on the planar layer 30 with a spacing from the first anode 91. The second anode 92 is electrically connected to the drain of another thin film transistor through the planar layer 30, so as to electrically connect the light sensing layer 95 and the thin film transistor device layer 20. The cathode layer 963 is arranged on the side of the electron injection layer 962 away from the first anode 91 and the second anode 92. The light emitting layer 94 and the light sensing layer 95 are electrically connected to the same layer cathode layer 963. In the embodiment, the light emitting device 41 and the light sensing device 50 arranged in the same layer share the same layer cathode layer 963.

[0091] Optionally, referring to Figure 6 The organic light emitting layer 94 and the light sensing layer 95 are arranged in the same layer with a spacing. This is to prevent the adjacent light emitting device 41 from being brightened, so as to improve the display effect.

[0092] Optionally, a barrier layer is arranged between the organic light emitting layer 94 and the light sensing layer 95. The barrier layer is used to further block the carriers flowing between the organic light emitting layer 94 and the light sensing layer 95, so as to prevent the adjacent light emitting device 41 from being brightened, and improve the display effect. The material of the barrier layer includes an insulating material.

[0093] Optionally, referring to Figure 7 An auxiliary layer 97 is arranged between the organic light emitting layer 94 and the first common layer 93. The auxiliary layer 97 is used to assist the movement of holes, so as to improve the light emitting efficiency of the light emitting device 41. After the auxiliary layer 97 is arranged, in order to reduce the gap between the light sensing layer 95 and the hole transport layer 932, a new hole transport layer 932 is added between the light sensing layer 95 and the hole transport layer, so as to improve the packaging effect of the display panel 100.

[0094] Optionally, referring to Figure 5The color conversion member 60 includes a color conversion film 61 for converting blue light into green light. The color conversion film 61 has at least a part of its orthogonal projection on the substrate 10 located between the orthogonal projection of the blue light emitting device 412 and the orthogonal projection of the green light emitting device 411 on the substrate 10.

[0095] In the embodiment, the blue light emitted by the blue light emitting device 412 and the green light emitted by the green light emitting device 411 are reflected by the finger and then enter the light sensing device 50 through the color conversion film 61. In the embodiment, the color conversion film 61 is configured to convert the blue light emitted by the blue light emitting device 412 into green light, thereby increasing the overall light intensity of the green light reaching the light sensing device 50, improving the sensitivity of the fingerprint recognition without increasing the light intensity of the green light emitting device 411, prolonging the service life of the light emitting device layer 40, improving the color cast of the display panel 100, and improving the display effect.

[0096] Optionally, the color conversion film 61 is configured to convert blue light with a wavelength in the range of 450 nm to 480 nm into green light with a wavelength in the range of 500 nm to 560 nm. The material of the color conversion film 61 includes one of quantum dot material and fluorescent material.

[0097] Optionally, the material of the color conversion film 61 includes at least one of indium phosphide (InP) quantum dot material, cadmium selenide (CdSe) quantum dot material, a mixture of cadmium sulfide (CdS) and cadmium selenide (CdSe) quantum dot material, and perovskite quantum dot material.

[0098] Optionally, the material of the color conversion film 61 includes at least one of Red Lumogen F305 (perylene derivative) series fluorescent material, Alexa Fluor 430 series fluorescent material, and Lucifer yellow series fluorescent material.

[0099] Optionally, the color conversion film 61 is arranged on a surface of the light sensing device 50 away from the substrate 10. Since the material of the color conversion film 61 is one of quantum dot material and fluorescent material, the color conversion film 61 can be directly evaporated on the surface of the light sensing device 50 away from the substrate 10 by evaporation during the manufacturing process of the color conversion film 61.

[0100] Optionally, the color conversion film 61 covers a surface of the light sensing device 50 away from the substrate 10. Since the color conversion film 61 covers a surface of the light sensing device 50, the light intensity of the converted green light can be maximized, thereby further improving the sensitivity of the fingerprint recognition.

[0101] Optionally, compared with the above embodiment, in some embodiments, the color conversion member 60 is located differently. Please refer to Figure 8 The color conversion member 60 includes a color conversion film 61. The color conversion film 61 is arranged on the side of the first inorganic encapsulation layer 81 away from the substrate 10. In this embodiment, the color conversion film 61 is arranged apart from the light sensing device 50. Since the light sensing device 50 is arranged in the second opening 72 of the pixel defining layer 70, arranging the color conversion film 61 between the first inorganic encapsulation layer 81 and the light sensing device 50 will affect the encapsulation effect of the light emitting device layer 40 to a certain extent. Therefore, in this embodiment, the color conversion film 61 is arranged on the side of the first inorganic encapsulation layer 81 away from the substrate 10, which improves the sensitivity of the light sensing device 50 in fingerprint identification without affecting the encapsulation effect of the display panel 100.

[0102] Optionally, the edge of the color conversion film 61 on the substrate is located on the outer periphery of the edge of the light sensing device 50 on the substrate. In this embodiment, most of the light rays incident on the light sensing device 50 from the encapsulation layer 80 side will pass through the color conversion film 61. The color conversion film 61 is configured to convert blue light into green light, thereby improving the overall light intensity of the green light incident on the light sensing device 50. In this way, the sensitivity of fingerprint identification is improved without increasing the light emitting intensity of the green light emitting device 411, thereby prolonging the service life of the green light emitting device 411, improving the color cast of the display panel 100, and improving the display effect of the display panel 100.

[0103] Optionally, please refer to Figure 8 The color conversion film 61 is arranged between the first inorganic encapsulation layer 81 and the organic encapsulation layer 82.

[0104] Optionally, please refer to Figure 9 The color conversion film 61 is arranged between the organic encapsulation layer 82 and the second inorganic encapsulation layer 83.

[0105] Optionally, please refer to Figure 10 The color conversion film 61 is arranged on the side of the second inorganic encapsulation layer 83 away from the substrate 10.

[0106] The above three ways of arranging the color conversion film 61 can improve the encapsulation effect of the encapsulation layer 80 on the light emitting device layer 40 and prevent water and oxygen from the outside from invading the light emitting device layer 40.

[0107] The specific embodiments of the present application are described in detail above. The above-described embodiments of the present application are only preferred embodiments of the present application. Those skilled in the art can make many modifications and improvements without departing from the concept of the present application. These modifications and improvements fall within the scope of the claims of the present application.

Claims

1. A display panel, characterized in that, include: Substrate; A thin-film transistor device layer is disposed on one side of the substrate; A light-emitting device layer is disposed on the side of the thin-film transistor device layer away from the substrate and is electrically connected to the thin-film transistor device layer. The light-emitting device layer includes a plurality of light-emitting devices. A photosensitive device is disposed on the side of the substrate close to the thin-film transistor device layer and is electrically connected to the thin-film transistor device layer. At least part of the orthographic projection of the photosensitive device on the substrate is located between the orthographic projections of two adjacent light-emitting devices on the substrate. The photosensitive device is used to convert green light optical signals into electrical signals. as well as A color conversion component is disposed on the side of the photosensitive device away from the substrate, and the orthographic projection of the color conversion component on the substrate overlaps with the orthographic projection of the photosensitive device on the substrate; The color conversion component is used to convert blue light into green light, and the material of the color conversion component includes one of quantum dot materials and fluorescent materials; or... The color conversion component is used to convert non-green light into green light, and the material of the color conversion component includes one of upconversion material, downconversion material and fluorescent material.

2. The display panel as described in claim 1, characterized in that, The light-emitting device and the photosensitive device are arranged on the same layer.

3. The display panel as described in claim 2, characterized in that, The display panel further includes a pixel defining layer, which is disposed on the side of the thin film transistor device layer away from the substrate. The pixel defining layer has a plurality of first openings on one surface away from the substrate, and a light-emitting device is disposed in one of the first openings. The pixel defining layer has a plurality of second openings on one surface away from the substrate, and a photosensitive device is disposed in one of the second openings.

4. The display panel as described in claim 3, characterized in that, The light-emitting device includes a red light-emitting device, a green light-emitting device, and a blue light-emitting device, wherein one of the red light-emitting device, green light-emitting device, and blue light-emitting device is provided in the first opening; The color conversion component includes a color conversion film, which is used to convert blue light into green light; The photosensitive device is provided between adjacent blue light-emitting devices and green light-emitting devices, and at least a portion of the color conversion film is projected onto the substrate between the orthogonal projections of the adjacent blue light-emitting devices and the green light-emitting devices on the substrate.

5. The display panel as described in claim 4, characterized in that, The color conversion film covers a surface of the photosensitive device away from the substrate.

6. The display panel as described in claim 3, characterized in that, The display panel also includes: A first anode is disposed on a surface of the thin-film transistor device layer away from the substrate, and the first opening exposes a portion of the first anode. The second anode is disposed on a surface of the thin-film transistor device layer away from the substrate, and the second opening exposes a portion of the second anode. A first common layer covers a surface of the pixel defining layer away from the substrate. A first portion of the first common layer is located within the first opening and overlaps the surface of the first anode away from the substrate. A second portion of the first common layer is located within the second opening and overlaps the surface of the second anode away from the substrate. An organic light-emitting layer is disposed on a surface of the first portion of the first common layer that is away from the substrate; A photosensitive layer is disposed on a surface of the second portion of the first common layer that is away from the substrate; A second common layer, a first portion of which covers a surface of the organic light-emitting layer away from the substrate, and a second portion of which covers a surface of the photosensitive layer away from the substrate; The light-emitting device is formed by the first anode, the first portion of the first common layer, the organic light-emitting layer, and the first portion of the second common layer; the light-emitting device is formed by the second anode, the second portion of the first common layer, the photosensitive layer, and the second portion of the second common layer; and the organic light-emitting layer and the photosensitive layer are disposed in the same layer.

7. The display panel as described in claim 6, characterized in that, The first common layer includes: A hole injection layer covers a surface of the pixel defining layer away from the substrate; a first portion of the hole injection layer is located within the first opening and overlaps with a surface of the first anode away from the substrate; a second portion of the hole injection layer is located within the second opening and overlaps with a surface of the second anode away from the substrate. A hole transport layer covers a surface of the hole injection layer away from the substrate. A first portion of the hole transport layer is located within a first opening and overlaps with a first portion of the hole injection layer. A second portion of the hole transport layer is located within a second opening and overlaps with a second portion of the hole injection layer. The organic light-emitting layer is disposed on the surface of the first portion of the hole transport layer away from the substrate, and at least a portion of the photosensitive layer is disposed on the surface of the second portion of the hole transport layer away from the substrate. The second common layer includes: An electron transport layer covers the surface of the organic light-emitting layer away from the substrate and the surface of the photosensitive layer away from the substrate; An electron injection layer covers a surface of the electron transport layer away from the substrate; and A cathode layer covers a surface of the electron injection layer away from the substrate.

8. The display panel as described in any one of claims 3-7, characterized in that, The pixel defining layer is made of a light-shielding material.

9. The display panel as described in any one of claims 1-3, characterized in that, The display panel also includes: A first inorganic encapsulation layer covers the side of the light-emitting device layer away from the substrate; An organic encapsulation layer covering the side of the first inorganic encapsulation layer away from the substrate; and The second inorganic encapsulation layer covers the side of the organic encapsulation layer away from the substrate; The color conversion component includes at least one color conversion film, which is disposed on the side of the first inorganic encapsulation layer away from the substrate. The orthographic projection of the edge of the color conversion film on the substrate is located on the outer periphery of the orthographic projection of the edge of the photosensitive device on the substrate.

10. The display panel as claimed in claim 9, characterized in that, At least one of the color conversion films is disposed between the first inorganic encapsulation layer and the organic encapsulation layer; and / or, At least one of the color conversion films is disposed between the organic encapsulation layer and the second inorganic encapsulation layer; and / or, At least one of the color conversion films is disposed on the side of the second inorganic encapsulation layer away from the substrate.

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