A temperature-controlled thermal switch device based on charge density wave transition

Abstract

A temperature-controlled thermal switch device based on charge density wave transition. This invention addresses the technical problem that existing temperature-controlled thermal switch devices based on thermo-induced lattice phase transition characteristics are limited by a major factor, failing to support stepless control of heat flow over a wide temperature range. The temperature-controlled thermal switch device of this invention specifically includes: a receiving end composite structure, a transmitting end composite structure, and a shell body (5); the lower surfaces of both ends of the transmitting end composite structure are attached to the first connecting surface (5-1) of the shell body (5), and the upper surfaces of both ends of the receiving end composite structure are attached to the second connecting surface (5-2) of the shell body (5). The transmitting end composite structure, the receiving end composite structure, and the shell body (5) form a sealed cavity structure. This invention belongs to the field of thermal regulators.

Description

Technical Field

[0001] This invention relates to a temperature-controlled thermal switch device, belonging to the technical field of thermal regulators. Background Technology

[0002] With the development of spacecraft technology, the trends of orbital maneuvering, multiple operating modes, and miniaturization are becoming increasingly apparent. These changes place higher demands on the thermal control systems of spacecraft. Spacecraft operating in space experience extreme temperature environments, such as the high temperatures under direct sunlight and the low temperatures in Earth's shadow. Therefore, the emergence and development of temperature-controlled thermal switch technology plays a crucial role in solving the challenges of thermal control design for spacecraft requiring frequent maneuvers or drastic changes in external environments. Current temperature-controlled thermal switches mainly utilize the thermally induced phase transition properties of vanadium dioxide and GST materials in radiative heat transfer to achieve automatic on / off switching of heat flow. However, due to their narrow phase transition temperature range (thermally induced lattice phase transition to first-order phase transition), they cannot support stepless control of heat flow over a wide temperature range. Therefore, there is an urgent need for a temperature-controlled thermal switch device based on charge density wave transitions that can achieve stepless control over a wide temperature range. Summary of the Invention

[0003] To address the problem that temperature-controlled thermal switch devices based on thermally induced lattice phase transition characteristics cannot support stepless control of heat flow over a wide temperature range, this invention proposes a temperature-controlled thermal switch device based on charge density wave transition.

[0004] The technical solution adopted by the present invention to solve the above problems is as follows: The present invention includes a receiver composite structure, a transmitter composite structure and a shell body 5; the lower surfaces of both ends of the transmitter composite structure are attached to the first connecting surface 5-1 of the shell body 5, and the upper surfaces of both ends of the receiver composite structure are attached to the second connecting surface 5-2 of the shell body 5. The transmitter composite structure, the receiver composite structure and the shell body 5 form a sealed cavity structure.

[0005] Furthermore, the receiver composite structure includes a receiver thermal pad 1, a receiver substrate 2, a receiver stage 3, and a receiver charge density wave coating 4; the receiver charge density wave coating 4, the receiver stage 3, the receiver substrate 2, and the receiver thermal pad 1 are stacked sequentially from top to bottom, and the receiver stage 3 and the receiver charge density wave coating 4 are located within the sealed cavity structure.

[0006] Furthermore, the transmitter composite structure specifically includes a transmitter thermal pad 6, a transmitter substrate 7, a transmitter stage 8, and a transmitter charge density wave coating 9; the transmitter thermal pad 6, the transmitter substrate 7, the transmitter stage 8, and the transmitter charge density wave coating 9 are stacked sequentially from top to bottom, and the transmitter stage 8 and the transmitter charge density wave coating 9 are located within the sealed cavity structure.

[0007] Furthermore, the charge density wave coating 4 at the receiving end is deposited on the first bonding surface 10 of the receiving end stage 3 using molecular beam epitaxy.

[0008] Furthermore, the charge density wave coating 9 of the transmitting end is deposited on the second bonding surface 12 of the transmitting end stage 8 by molecular beam epitaxy.

[0009] Furthermore, both the transmitter charge density wave coating 9 and the receiver charge density wave coating 4 are made of two-dimensional TiSe2 thin film, and the single-layer thickness of both the transmitter charge density wave coating 9 and the receiver charge density wave coating 4 is 0.5~5 nm.

[0010] Furthermore, the transmitter stage 8 is formed by etching on the transmitter substrate 7 using photolithography, and the thickness of the transmitter stage is 500 nm.

[0011] Furthermore, the shell body 5 is attached to the epitaxial connection surface 11 of the transmitter substrate 7 by magnetron sputtering technology; the shell body 5 is made of Cu4TiSe4 crystal material.

[0012] Furthermore, the transmitter substrate 7, transmitter stage 8, receiver stage 3, and receiver substrate 2 are all made of lightly doped silicon wafers, with a doping concentration of less than 10⁻⁶. 17 cm -3 .

[0013] Furthermore, the vertical spacing of the shell body 5 is 1010 nm to 1100 nm.

[0014] The beneficial effects of this invention are as follows: The temperature-controlled thermal switch device of this invention has strong radiative heat transfer capability at low temperatures and low radiative heat transfer capability at high temperatures. Based on the modulation effect of charge density wave transitions on radiative heat transfer in the charge density wave coating at the transmitting end and the charge density wave coating at the receiving end, and utilizing the characteristic that the radiative heat transfer capability induced by interband transitions in charge density wave materials decreases with increasing temperature, the electronic band structure of the temperature-controlled material is used to achieve stepless control of heat flow in a wide temperature range at the microscale, thereby overcoming the limitation of the narrow temperature range of heat flow transitions based on the thermally induced lattice phase transition characteristics. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the overall structure of the present invention;

[0016] Figure 2 This is a schematic diagram of the shell body;

[0017] Figure 3 This is a graph showing the change in the radiative thermal conductivity before and after the transition of the present invention.

[0018] Figures 1 to 3 In the middle: 1. Receiver end thermal pad; 2. Receiver end substrate; 3. Receiver end stage; 4. Receiver end charge density wave coating; 5. Shell body; 5-1. First connecting surface; 5-2. Second connecting surface; 6. Transmitter end thermal pad; 7. Transmitter end substrate; 8. Transmitter end stage; 9. Transmitter end charge density wave coating; 10. First bonding surface; 11. Extended connecting surface; 12. Second bonding surface. Detailed Implementation

[0019] A temperature-controlled thermal switch is a thermal control device that can establish and disconnect a thermal connection between two components. It can automatically open or close the heat transfer path as needed.

[0020] Specific implementation method one: as follows Figure 1 and Figure 2 As shown, a temperature control thermal switch device based on charge density wave transition includes a receiving end composite structure, a transmitting end composite structure, and a shell body 5; the lower surfaces of both ends of the transmitting end composite structure are attached to the first connecting surface 5-1 of the shell body 5, and the upper surfaces of both ends of the receiving end composite structure are attached to the second connecting surface 5-2 of the shell body 5. The transmitting end composite structure, the receiving end composite structure, and the shell body 5 form a sealed cavity structure.

[0021] The shell body 5 is made of a low thermal conductivity crystalline material and is fixed to both ends of the receiving end composite structure and the transmitting end composite structure through vapor phase epitaxy growth technology and photolithography. The two ends of the receiving end composite structure are attached to the first connecting surface 5-1 of the shell body 5, and the two ends of the transmitting end composite structure are attached to the second connecting surface 5-2 of the shell body 5 to form a cavity. The receiving end composite structure receives external temperature and conducts it into the cavity formed by the receiving end composite structure, the transmitting end composite structure, and the shell body 5. The receiving end composite structure and the transmitting end composite structure are mirror images of each other. The composite structure of the transmitter and receiver incorporates a charge density wave material. Based on the modulation effect of charge density wave transitions in the transmitter charge density wave coating 9 and receiver charge density wave coating 4 on radiative heat transfer, the temperature control thermal switch device of the present invention has strong radiative heat transfer capability at low temperatures and low radiative heat transfer capability at high temperatures. When the temperature rises, the charge density wave material undergoes hybridization of charge density wave (CDW) excitons and plasma surface excitons, causing a significant decrease in the radiative heat transfer capability of the temperature control thermal switch device based on charge density wave transitions, and the temperature control thermal switch device is switched off.

[0022] Compared to existing technologies, this invention utilizes the characteristic that the charge density wave (CDW) bandgap of the charge density wave material gradually closes with increasing temperature, and the excited thermal radiation also attenuates accordingly. This allows the temperature-controlled thermal switch device to exhibit even lower radiative heat transfer capacity at high temperatures, achieving a temperature-controlled switching effect on heat flow. Consequently, the temperature-controlled thermal switch device exhibits excellent automatic thermal switching performance. The temperature-controlled thermal switch device based on charge density wave transitions in this invention has a wide transition temperature range and a broader range of radiative heat flow regulation. This invention features a simple energy transfer path, requires no manual control, and does not involve traditional refrigerants. It also boasts advantages such as being environmentally friendly, having a fast response speed, and a high degree of intelligence and automation.

[0023] Preferably, the receiver composite structure includes a receiver thermal pad 1, a receiver substrate 2, a receiver stage 3, and a receiver charge density wave coating 4; the receiver charge density wave coating 4, the receiver stage 3, the receiver substrate 2, and the receiver thermal pad 1 are stacked sequentially from top to bottom, and the receiver stage 3 and the receiver charge density wave coating 4 are located within the sealed cavity structure.

[0024] Preferably, the transmitter composite structure specifically includes a transmitter thermal pad 6, a transmitter substrate 7, a transmitter stage 8, and a transmitter charge density wave coating 9; the transmitter thermal pad 6, the transmitter substrate 7, the transmitter stage 8, and the transmitter charge density wave coating 9 are stacked sequentially from top to bottom, and the transmitter stage 8 and the transmitter charge density wave coating 9 are located inside the sealed cavity structure.

[0025] The receiver composite structure comprises a receiver thermal pad 1, a receiver substrate 2, and a receiver charge density wave plating layer 4. The receiver charge density wave plating layer 4 is deposited on the upper surface of the receiver substrate, and the receiver substrate 2 is fixed to the surface of the thermal pad 1 by thermally conductive adhesive. The transmitter charge density wave plating layer 9 is deposited on the lower surface of the transmitter substrate 7, and the transmitter substrate 7 is fixed to the transmitter thermal pad 6 by thermally conductive adhesive.

[0026] Thermally conductive adhesive: refers to a one-component, thermally conductive, room-temperature curing silicone adhesive and sealant. It cures by reacting with moisture in the air, releasing low-molecular-weight substances that cross-link and solidify into a high-performance elastomer. This type of thermally conductive adhesive exhibits excellent resistance to thermal cycling, aging resistance, and electrical insulation properties. It also possesses superior moisture resistance, shock resistance, corona resistance, leakage resistance, and chemical resistance.

[0027] The receiving end receives heat through the thermal pad 1, which is then conducted to the charge density wave coating 4; the transmitting end receives heat through the thermal pad 6, which is then conducted to the charge density wave coating 9. This causes the material to change according to the external temperature. When the temperature is higher than the charge density wave transition temperature, the charge density wave (CDW) bandgap of the charge density wave material gradually closes, and the excited thermal radiation also attenuates. Simultaneously, when the system is in a charge density wave sequence, charge density wave (CDW) exciton and plasma surface exciton hybridization occurs between the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4, generating strong evanescent wave radiation capability. When the temperature rises, the system's charge density wave (CDW) bandgap relationship fails to excite strong charge density wave (CDW) excitons, limiting the evanescent field radiation transmission channel between the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4. This results in a significant decrease in the radiative heat transfer capability of the temperature control thermal switch device based on charge density wave transition, thus forming a good automatic thermal switch.

[0028] Compared with existing technologies, the temperature-controlled thermal switch device based on charge density wave transition proposed in this invention uses charge density wave as the main energy regulation carrier. Based on the characteristic that the radiative heat transfer capacity induced by interband transitions in charge density wave materials decreases with increasing temperature, the transition temperature of the charge density wave can be adjusted by factors such as stress and doping through temperature control of the material's electronic band structure. This allows for stepless control of heat flow at the microscale over a wide temperature range. Furthermore, the charge density wave transition used in this invention is a second-order phase transition. Compared to traditional materials such as vanadium dioxide and GST, which have relatively fixed phase transition temperatures, this invention has a wider transition temperature range, supporting stronger radiative heat flow regulation capabilities. This overcomes the limitation of the narrow temperature range of heat flow transitions based on thermally induced lattice phase transition characteristics. Figure 3 As shown, the radiation heat transfer regulation capability of the temperature control thermal switch device based on charge density wave transition will far surpass that of vanadium-based phase change materials such as vanadium dioxide and sulfide phase change materials such as GST.

[0029] Preferably, the charge density wave coating 4 at the receiving end is deposited on the first bonding surface 10 of the receiving end stage 3 using a molecular beam epitaxy method.

[0030] The charge density wave coating 4 at the receiving end is deposited on the first bonding surface 10 of the receiving end stage 3 using molecular beam epitaxy.

[0031] Molecular beam epitaxy is a modern technique that uses a molecular beam to grow single crystals or thin films on the surface of a crystal substrate.

[0032] Compared with existing technologies, the molecular beam epitaxy method can make the contact surface thinner, thereby making the charge density wave coating 4 at the receiving end more sensitive to temperature, and thus better realize the automatic conduction or disconnection of heat flow.

[0033] Preferably, the transmitter charge density wave coating 9 is deposited on the second bonding surface 12 of the transmitter stage 8 by molecular beam epitaxy.

[0034] The transmitter charge density wave coating 9 is deposited on the second bonding surface 12 of the transmitter stage 8 by molecular beam epitaxy.

[0035] Compared with existing technologies, the molecular beam epitaxy method can make the contact surface thinner, thereby making the charge density wave coating 4 at the receiving end more sensitive to temperature, and thus better realize the automatic conduction or disconnection of heat flow.

[0036] Preferably, both the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4 are made of two-dimensional TiSe2 thin film, and the single layer thickness of both the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4 is 0.5~5nm.

[0037] The transmitter charge density wave coating 9 and the receiver charge density wave coating 4 are both made of two-dimensional TiSe2 thin film, and the single layer thickness of the transmitter charge density wave coating 9 and the receiver charge density wave coating 4 is 0.5~5nm.

[0038] Compared to existing technologies, when the temperature transferred by the receiving end thermal pad 1 exceeds the charge density wave transition temperature of the two-dimensional TiSe2 thin film, the CDW bandgap of the charge density wave material, the two-dimensional TiSe2 thin film, will gradually close, and the excited thermal radiation will also attenuate. Simultaneously, when the system is in a charge density wave sequence, CDW exciton and plasma surface exciton hybridization will occur between the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4, generating strong evanescent wave radiation capability. When the temperature rises, the system's CDW bandgap relationship fails to excite strong CDW excitons, limiting the evanescent field radiation transmission channel between the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4. This results in a significant decrease in the radiative heat transfer capability of the charge density wave transition-based temperature control thermal switch device, leading to good automatic thermal switching performance. Furthermore, since charge density wave transition is a second-order phase transition with a wide transition temperature range, it can support stronger radiative heat flux control capabilities. Furthermore, the radiation heat transfer regulation capability of the temperature control thermal switch device based on charge density wave transition will far surpass that of vanadium-based phase change materials such as vanadium dioxide and sulfide phase change materials such as GST.

[0039] Preferably, the transmitter stage 8 is formed by etching on the transmitter substrate 7 using photolithography, and the thickness of the transmitter stage is 500 nm.

[0040] The transmitter stage 8 is formed by etching on the transmitter substrate 7 using photolithography, and the thickness of the transmitter stage is 500 nm.

[0041] Compared with existing technologies, etching the transmitter stage 8 onto the transmitter substrate 7 using photolithography can improve heat conduction and enhance the stability of the charge density wave coating 9 on the transmitter stage 8.

[0042] Preferably, the shell body 5 is attached to the epitaxial connection surface 11 of the transmitter substrate 7 by magnetron sputtering technology; the shell body is made of Cu4TiSe4 crystal material.

[0043] The shell body 5 is attached to the epitaxial connection surface 11 of the emitter substrate 7 by magnetron sputtering technology; the shell body 5 is made of Cu4TiSe4 crystal material.

[0044] Magnetron sputtering is a commonly used physical vapor deposition (PVD) method, which has the advantages of low deposition temperature, fast deposition rate, good uniformity of deposited films, and composition close to that of the target material.

[0045] Compared to existing technologies, Cu4TiSe4 crystal material has low thermal conductivity, which can prevent the surrounding environment from affecting the operation of the device. Furthermore, magnetron sputtering technology can achieve a more robust adhesion, ensuring a stable bond between the shell and the emitter substrate, thus enhancing the overall structural reliability.

[0046] Preferably, the transmitter substrate 7, transmitter stage 8, receiver stage 3, and receiver substrate 2 are all made of low-doped silicon wafers, with a doping concentration of less than 10⁻⁶. 17 cm -3 .

[0047] Among them, the transmitter substrate 7, transmitter stage 8, receiver stage 3, and receiver substrate 2 are all made of low-doped silicon wafers, with a doping concentration of less than 10%. 17 cm -3 .

[0048] Compared with existing technologies, the transmitter substrate 7, the transmitter stage 8, the receiver stage 3, and the receiver substrate 2 are all made of low-doped silicon wafers, which helps to maintain relatively good electrical insulation performance and reduce unnecessary leakage current and signal interference. Furthermore, silicon wafers themselves have good mechanical strength and stability, providing reliable support and fixation for related components.

[0049] Preferably, the vertical spacing of the shell body 5 is 1010 nm to 1100 nm.

[0050] The vertical spacing of the shell body 5 is 1050 nm, and the spacing between the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4 is 50 nm.

[0051] In another embodiment, the vertical spacing of the shell body 5 is 1100 nm, that is, the spacing between the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4 is 100 nm.

[0052] In another embodiment, the vertical spacing of the shell body 5 is 2000 nm, that is, the spacing between the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4 is 1000 nm.

[0053] Compared with existing technologies, the above embodiments can adapt to different application needs, providing multiple configuration options that can be flexibly adjusted according to specific application scenarios and performance requirements to achieve optimal results. Different spacing settings may affect charge transmission, energy distribution, etc., and reasonable adjustments can optimize the overall performance of the device, such as better controlling signal transmission characteristics and energy conversion efficiency. Multiple spacing combinations also provide possibilities for the device to adapt to different working conditions and environments, helping to expand its application in different fields. Among them, the embodiment with a vertical spacing of 1050 nm for the shell body 5 and a spacing of 50 nm between the transmitting end charge density wave coating layer 9 and the receiving end charge density wave coating layer 4 shows better results.

[0054] Working principle

[0055] The temperature-controlled thermal switch device can achieve strong radiative heat transfer capability at low temperatures and low radiative heat transfer capability at high temperatures. Its core induction mechanism is the modulation effect of charge density wave transition in the transmitter charge density wave coating 9 and receiver charge density wave coating 4 on radiative heat transfer.

[0056] The receiver charge density wave coating 4 and the transmitter charge density wave coating 9 are composed of two-dimensional TiSe2 thin films and possess temperature-dependent properties. When the temperature changes, the charge density wave undergoes transitions, affecting performance such as heat transfer. The receiver and transmitter composite structures are connected by a shell to form a cavity. Heat from the receiver can be transferred to the receiver charge density wave coating through the receiver thermal pad, receiver substrate, and receiver stage; the same applies to the transmitter. Heat transfer is controlled by responding to temperature and changes in charge density wave characteristics, thus functioning as a temperature-controlled thermal switch. When the temperature of the hot end exceeds the charge density wave transition temperature, the CDW bandgap of the charge density wave material gradually closes, and the excited thermal radiation also attenuates. Simultaneously, when the system is in a charge density wave sequence, CDW exciton and plasma surface exciton hybridization will occur between the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4, generating strong evanescent wave radiation capability. However, as the temperature rises, the system's CDW bandgap relationship prevents the generation of strong CDW excitons, limiting the evanescent field radiation transmission channel between the transmitting end charge density wave coating 9 and the receiving end charge density wave coating 4. This leads to a significant decrease in the radiative heat transfer capability of the charge density wave transition-based temperature control thermal switch device, resulting in good automatic thermal switching performance. Furthermore, since charge density wave transition is a second-order phase transition with a wide transition temperature range, it can support stronger radiative heat flux control capabilities. Figure 3 As shown, the radiation heat transfer regulation capability of the temperature control thermal switch device based on charge density wave transition will far surpass that of vanadium-based phase change materials such as vanadium dioxide and sulfide phase change materials such as GST.

[0057] Compared with existing technologies, this invention utilizes the characteristic that the radiative heat transfer capacity induced by interband transitions in charge density wave materials decreases with increasing temperature. By controlling the electronic band structure of the material at the temperature, it realizes the possibility of stepless control of heat flow in a wide temperature range at the microscale, thereby overcoming the limitation of the narrow temperature range of heat flow transitions based on the thermally induced lattice phase transition characteristics of the original technology.

[0058] Furthermore, the temperature control thermal switch device based on charge density wave transition proposed in this invention has advantages such as not involving traditional refrigerants (green and environmentally friendly), simple energy transmission path (fast response speed), and no need for human control (high degree of intelligence and automation).

[0059] The temperature-controlled thermal switch device based on charge density wave transition proposed in this invention uses charge density wave as the main energy regulation carrier. The transition temperature of the charge density wave can be adjusted by factors such as stress and doping. Compared with traditional materials such as vanadium dioxide and GST, which have relatively fixed phase transition temperatures, it can meet more application scenarios. Furthermore, since charge density wave transition is a second-order phase transition process, its phase transition temperature range is wide, which can support stronger heat flow regulation performance.

[0060] The temperature-controlled thermal switch device based on charge density wave transition proposed in this invention uses evanescent waves as the primary energy carrier. Its heat transfer capacity can exceed the blackbody radiation limit by several orders of magnitude, potentially providing a practical solution to the problem of low output power density faced by radiation technology. Furthermore, the spectral energy distribution of the temperature-controlled thermal switch device based on charge density wave transition proposed in this invention is not bound by Planck's law, exhibiting a significant monochromatic effect and a more concentrated spectral energy, which is more conducive to the direct control of heat flow.

[0061] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent substitutions, and improvements made to the above embodiments without departing from the scope of the present invention, based on the technical essence of the present invention and within the spirit and principles of the present invention, shall still fall within the protection scope of the present invention.

Claims

1. A temperature-controlled thermal switch device based on charge density wave transition, comprising a receiving end composite structure, a transmitting end composite structure and a shell body (5); the lower surfaces of both ends of the transmitting end composite structure are attached to the first connecting surface (5-1) of the shell body (5), and the upper surfaces of both ends of the receiving end composite structure are attached to the second connecting surface (5-2) of the shell body (5); the transmitting end composite structure, the receiving end composite structure and the shell body (5) form a sealed cavity structure. Its features are, The receiving end thermal pad (1), receiving end substrate (2), receiving end stage (3) and receiving end charge density wave coating (4) are stacked from top to bottom, and the receiving end charge density wave coating (4), receiving end stage (3), receiving end substrate (2) and receiving end thermal pad (1) are located inside the sealed cavity structure. The transmitter composite structure specifically includes a transmitter heat-conducting pad (6), a transmitter substrate (7), a transmitter stage (8), and a transmitter charge density wave coating (9); the transmitter heat-conducting pad (6), the transmitter substrate (7), the transmitter stage (8), and the transmitter charge density wave coating (9) are stacked sequentially from top to bottom, and the transmitter stage (8) and the transmitter charge density wave coating (9) are located inside the sealed cavity structure; The charge density wave coating (4) at the receiving end is deposited on the first bonding surface (10) of the receiving end stage (3) using molecular beam epitaxy. The charge density wave coating (9) of the transmitter is deposited on the second bonding surface (12) of the transmitter stage (8) by molecular beam epitaxy. Both the transmitter charge density wave coating (9) and the receiver charge density wave coating (4) are made of two-dimensional TiSe2 thin film, and the single layer thickness of both the transmitter charge density wave coating (9) and the receiver charge density wave coating (4) is 0.5~5 nm.

2. The temperature control thermal switch device based on charge density wave transition according to claim 1, characterized in that, The transmitter stage (8) is formed by etching on the transmitter substrate (7) using photolithography, and the thickness of the transmitter stage is 500 nm.

3. The temperature control thermal switch device based on charge density wave transition according to claim 1, characterized in that, The shell body (5) is attached to the epitaxial connection surface (11) of the emitter substrate (7) by magnetron sputtering technology; the shell body (5) is made of Cu4TiSe4 crystal material.

4. The temperature control thermal switch device based on charge density wave transition according to claim 1, characterized in that, The transmitter substrate (7), transmitter stage (8), receiver stage (3), and receiver substrate (2) are all made of low-doped silicon wafers with a doping concentration of less than 10. 17 cm -3 .

5. The temperature control thermal switch device based on charge density wave transition according to claim 1, characterized in that, The vertical spacing of the shell body (5) is 1010 nm to 1100 nm.

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