A multispectral in-situ fusion detector and a manufacturing method thereof

Abstract

The application provides a multispectral in-situ fusion detector and a manufacturing method thereof. The detector comprises a visible light chip and an infrared light chip. The visible light chip comprises a visible light pixel array. The infrared light chip is connected below the visible light chip. The infrared light chip comprises an infrared light pixel array. The infrared light pixel array and the visible light pixel array are arranged in a corresponding relationship in a three-dimensional vertical space. One infrared pixel corresponds to one or more visible light pixels to realize vertical in-situ fusion detection of visible light / infrared light. The detector fuses the visible light chip and the infrared light chip in an integrated manner. While meeting process compatibility, the detector can realize all-weather and dynamic detection and identification of a detection target in a complex environment (for example, a high-speed motion scene), and improves the accuracy and flexibility of visible light / infrared light fusion detection. The manufacturing method is simple in steps, compatible in manufacturing process, and easy to mass produce.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of integrated circuits and detectors, and relates to a multispectral in-situ fusion detector and a manufacturing method thereof. BACKGROUND

[0002] An image sensor is a device for converting incident light signals into electrical signals. With the development of technology, visible light and infrared sensor technology are constantly mature. Infrared detectors can detect according to the thermal radiation of an object, can work all day long, and are not easily affected by special environments such as smoke and fog. However, infrared imaging has low contrast and relatively insufficient texture details. Visible light images use visible light reflection for imaging, have high contrast and rich texture information, and are more conducive to machine recognition or human eye observation, but the imaging effect of visible light images in fog, low light and other scenes is not ideal.

[0003] The combination of visible light band and long-wave infrared band imaging detection can have the advantages of rich details, high contrast, all-day monitoring, good concealment, etc. The multispectral detection of visible light and long-wave infrared at the present stage mainly uses discrete devices for detection, and mainly uses image algorithms for fusion to realize multispectral detection of visible light and long-wave infrared. However, the current multispectral detector has the following problems: visible light and infrared light are imaged separately, it is difficult to realize synchronous imaging and cannot restore the detection information in situ, and the optical system is complex, and the application demand of the detector is limited in miniaturization and light weight.

[0004] Therefore, how to provide a multispectral in-situ fusion detector and a manufacturing method thereof to realize multispectral in-situ fusion detection of visible light / infrared light has become an important technical problem to be solved by those skilled in the art.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of clearly and completely describing the technical scheme of the present application, and for the convenience of understanding by those skilled in the art. The above technical scheme cannot be considered as known to those skilled in the art only because it is described in the background section of the present application. SUMMARY

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present application is to provide a multispectral in-situ fusion detector and a manufacturing method thereof, which can solve the problem that the multispectral detector in the prior art cannot realize multispectral in-situ fusion detection of visible light / infrared light.

[0007] To achieve the above object and other related objects, the present application provides a multispectral in-situ fusion detector, comprising:

[0008] A visible light chip comprising a visible light pixel array, the visible light chip having one side with the visible light pixel array facing upward;

[0009] An infrared light chip connected below the visible light chip, the infrared light chip comprising an infrared light pixel array, and the infrared light chip having one side with the infrared light pixel array facing upward, the infrared light pixel array and the visible light pixel array being vertically correspondingly arranged to realize vertical in-situ fusion detection of visible light / infrared light.

[0010] Optionally, the visible light pixel array comprises a plurality of visible light pixels arranged in a first manner, the infrared light pixel array comprises a plurality of infrared light pixels arranged in a second manner, and one infrared light pixel is correspondingly arranged with one or more visible light pixels.

[0011] Optionally, the visible light chip further comprises a through-silicon via, the through-silicon via being located at the periphery of the visible light pixel array to electrically connect the visible light chip and the infrared light chip.

[0012] Optionally, the detector further comprises an electrical connection structure, the electrical connection structure being located between the visible light chip and the infrared light chip and connected with the through-silicon via, and the electrical connection structure comprises at least one of a bonding metal and a vertical interconnect bridge.

[0013] Optionally, the detector further comprises a cavity, the cavity being located between the visible light pixel array and the infrared light pixel array.

[0014] Optionally, the cavity is open from one side of the visible light chip towards the infrared light chip and partially penetrates the visible light chip.

[0015] Optionally, the detector comprises a cofferdam, the cofferdam being located between the visible light chip and the infrared light chip to form the cavity, and the infrared light pixel array is located in the cavity.

[0016] Optionally, the detector further comprises at least one of a visible light anti-reflection film and an infrared light anti-reflection film, wherein the visible light anti-reflection film is located on the side of the visible light chip with the visible light pixel array, and the infrared light anti-reflection film is located in the cavity.

[0017] Optionally, the visible light chip comprises a front-illuminated image sensor or a back-illuminated image sensor.

[0018] Optionally, the detector further comprises a medium layer and a groove, the medium layer is arranged on a side of the visible light chip facing the infrared light chip, the groove is opened on a side of the medium layer facing the infrared light chip and extends upward to partially penetrate the medium layer, and a part of the medium layer above the groove constitutes a microlens.

[0019] Optionally, the detector further comprises a surface structure arranged on a side of the visible light chip facing the infrared light chip to select infrared light of a preset wavelength.

[0020] Optionally, the surface structure comprises at least one of a grating structure, a sawtooth grating structure and a metasurface structure.

[0021] The application further provides a manufacturing method of a multispectral in-situ fusion detector, comprising the following steps:

[0022] A visible light wafer and an infrared light wafer are provided, the visible light wafer comprises at least one visible light pixel array, and the infrared light wafer comprises at least one infrared light pixel array;

[0023] The visible light wafer is connected above the infrared light wafer, wherein a side of the visible light wafer provided with the visible light pixel array and a side of the infrared light wafer provided with the infrared light pixel array are both arranged upward, and the infrared light pixel array and the visible light pixel array are arranged in vertical correspondence.

[0024] Optionally, the method further comprises the following step: segmenting the structure after the visible light wafer is connected to the infrared light wafer to obtain at least one detector, the detector comprises a visible light chip segmented based on the visible light wafer and an infrared light chip segmented based on the infrared light wafer, wherein the visible light chip comprises the visible light pixel array, and the infrared light chip comprises the infrared light pixel array.

[0025] Optionally, the method further comprises the step of forming a through silicon via in the visible light wafer, and the through silicon via is located at the periphery of the visible light pixel array.

[0026] As described above, the multispectral in-situ fusion detector of the present application, by vertically stacking the visible light chip for detecting visible light information on the infrared light chip for detecting infrared light information, makes the infrared pixel array and the visible light pixel array set a corresponding relationship in the three-dimensional vertical space, further electrically connects the visible light chip and the infrared light chip based on the through silicon via to realize the electrical and signal interconnection of the two, and fuses the visible light chip and the infrared light chip from the integration mode, while meeting the process compatibility, fundamentally solves the problem that the existing multispectral detector cannot realize in-situ fusion detection of visible light and infrared light, can realize all-weather and dynamic detection and identification of the detection target in a complex environment (for example, a high-speed motion scene), and improves the accuracy and flexibility of visible light / infrared light fusion detection. In addition, through the design of the detector structure, for example, the functional structures such as cavity, antireflection film, getter, microlens and surface structure are set, the detection sensitivity and structural flexibility of the detector are further improved, and the miniaturization and lightweight application requirements of the detector are met. The manufacturing method of the multispectral in-situ fusion detector of the present application, by processing and manufacturing the visible light wafer and the infrared light wafer respectively, then stacking and connecting them in three-dimensional space, and then according to actual needs, the detector structure composed of vertically stacked visible light chip and infrared light chip is obtained, realizing multispectral vertical in-situ fusion detection of visible light and infrared light, and the manufacturing steps are simple, the manufacturing process is compatible, and it is easy to mass produce. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 A cross-sectional schematic diagram of the multispectral in-situ fusion detector of the present application in embodiment one is shown.

[0028] Figure 2 A partial cross-sectional schematic diagram of the structure obtained after providing the visible light wafer in the manufacturing method of the multispectral in-situ fusion detector of the present application is shown.

[0029] Figure 3 A partial cross-sectional schematic diagram of the structure obtained after forming a through silicon via in the visible light wafer in the manufacturing method of the multispectral in-situ fusion detector of the present application is shown.

[0030] Figure 4 A partial cross-sectional schematic diagram of the structure obtained after forming a cavity in the visible light wafer in the manufacturing method of the multispectral in-situ fusion detector of the present application in embodiment one is shown.

[0031] Figure 5 A partial cross-sectional schematic diagram of the structure obtained after forming a dielectric film in the manufacturing method of the multispectral in-situ fusion detector of the present application in embodiment one is shown.

[0032] Figure 6Figure 1 shows a partial cross-sectional view of a structure obtained after forming a visible light anti-reflection coating and getter layer in the method of fabricating a multispectral in-situ fusion detector of the present application according to Example 1.

[0033] Figure 7 Figure 2 shows a partial cross-sectional view of a structure obtained after opening a through-silicon via in the method of fabricating a multispectral in-situ fusion detector of the present application according to Example 1.

[0034] Figure 8 Figure 3 shows a partial cross-sectional view of a structure obtained after forming a bonding metal in the method of fabricating a multispectral in-situ fusion detector of the present application according to Example 1.

[0035] Figure 9 Figure 4 shows a partial cross-sectional view of a structure obtained after providing an infrared light wafer in the method of fabricating a multispectral in-situ fusion detector of the present application.

[0036] Figure 10 Figure 5 shows a partial cross-sectional view of a structure obtained after attaching a visible light wafer over the infrared light wafer in the method of fabricating a multispectral in-situ fusion detector of the present application according to Example 1.

[0037] Figure 11 Figure 6 shows a cross-sectional view of a multispectral in-situ fusion detector according to Example 2.

[0038] Figure 12 Figure 7 shows a partial cross-sectional view of a structure obtained after forming a microlens in the method of fabricating a multispectral in-situ fusion detector of the present application according to Example 2.

[0039] Figure 13 Figure 8 shows a partial cross-sectional view of a structure obtained after opening a through-silicon via in the method of fabricating a multispectral in-situ fusion detector of the present application according to Example 2.

[0040] Figure 14 Figure 9 shows a partial cross-sectional view of a structure obtained after forming a dam in the method of fabricating a multispectral in-situ fusion detector of the present application.

[0041] Figure 15 Figure 10 shows a partial cross-sectional view of a structure obtained after forming a vertical interconnect bridge in the method of fabricating a multispectral in-situ fusion detector of the present application.

[0042] Figure 16 Figure 11 shows a partial cross-sectional view of a structure obtained after forming a bonding metal in the method of fabricating a multispectral in-situ fusion detector of the present application according to Example 3. Figure 15 Figure 12 shows a top view of the structure shown in Figure 11.

[0043] Figure 17 Figure 13 shows a cross-sectional view of a multispectral in-situ fusion detector according to Example 3.

[0044] Figure 18The fabrication method of the multispectral in-situ fusion detector of the present application is shown in the partial cross-sectional view of the structure after surface formation in Example 3.

[0045] Legend of reference signs

[0046] 100 visible light wafer

[0047] 10 visible light chip

[0048] 11 visible light pixel array

[0049] 111 visible light pixel

[0050] 12 first interconnection metal pad

[0051] 13 through-silicon via

[0052] 14 dielectric film

[0053] 151 infrared light anti-reflection film

[0054] 152 visible light anti-reflection film

[0055] 16 getter layer

[0056] 17 first dielectric layer

[0057] 171 recess

[0058] 18 second dielectric layer

[0059] 181 surface structure

[0060] 200 infrared light wafer

[0061] 20 infrared light chip

[0062] 21 infrared light pixel array

[0063] 211 infrared light pixel

[0064] 22 second interconnection metal pad

[0065] 31 key metal

[0066] 32 vertical interconnection bridge

[0067] 40a, 40b, 40c cavity

[0068] 50 dam DETAILED DESCRIPTION

[0069] Following, the embodiments of the present application will be described in detail by specific examples. Other advantages and effects of the present application can be easily understood by those skilled in the art from this description. The present application can also be implemented or applied by other different embodiments, and various modifications or changes can be made to the details in this description based on different views and applications without departing from the spirit of the present application.

[0070] Please refer to Figures 1 to 18 It is to be noted that the diagrams provided in this embodiment only schematically illustrate the basic concept of the present application, and thus the diagrams only show the components related to the present application rather than being drawn according to the number, shape and size of the components in actual implementation. The shape, number and ratio of the components in actual implementation can be arbitrarily changed, and the layout pattern of the components can be more complicated.

[0071] Embodiment One

[0072] This embodiment provides a multi-spectrum in-situ fusion detector (hereinafter referred to as "detector"), please refer to Figure 1 , which is a cross-sectional schematic diagram of the detector. The detector includes a visible light chip 10 and an infrared light chip 20.

[0073] Specifically, the visible light chip 10 includes a visible light pixel array 11. The visible light chip 10 is provided with the visible light pixel array 11 with one side upward. The infrared light chip 20 is connected below the visible light chip 10. The infrared light chip 20 includes an infrared light pixel array 21 and is provided with the infrared light pixel array 21 with one side upward. The infrared light pixel array 21 and the visible light pixel array 11 are vertically correspondingly arranged to realize vertical in-situ fusion detection of visible light / infrared light. In order to realize information detection of the same incident light, the photosensitive surface of the visible light pixel array and the photosensitive surface of the infrared light pixel array are both arranged upward (i.e. the photosensitive surface is arranged toward the incident direction of the incident light). "Vertically correspondingly arranged" means that the vertical projection of the area where the infrared light pixel array 21 is located substantially coincides with the vertical projection of the area where the visible light pixel array 11 is located (with process error). "In-situ fusion detection" means that when the detector is in a detection environment, the visible light information detected by the visible light chip and the infrared light information detected by the infrared light chip belong to the same incident light information in the vertical direction. Only the incident light information is detected and restored through different wave bands, and there is no offset in the horizontal space, so it has high detection accuracy.

[0074] As an example, the visible light pixel array 11 includes a plurality of visible light pixels 111 arranged in a first manner, the infrared light pixel array 21 includes a plurality of infrared light pixels 211 arranged in a second manner, and one infrared light pixel 211 is arranged corresponding to one or more visible light pixels 111. That is, each infrared light pixel can be arranged corresponding to one or more visible light pixels, for example, two. The arrangement manner of the plurality of visible light pixels and the plurality of infrared light pixels can be designed based on actual needs, for example, a square array, and the arrangement manners can be the same or different.

[0075] As an example, the visible light chip 10 includes a back-illuminated image sensor or a front-illuminated image sensor.

[0076] As an example, the visible light chip 10 further includes a first interconnection metal pad 12, the infrared light chip 20 further includes a second interconnection metal pad 22 and a readout circuit (not shown), the first interconnection metal pad 12 is electrically connected with the visible light pixel 111, the second interconnection metal pad 22 is electrically connected with the infrared light pixel 211, and the readout circuit is also connected with the second interconnection metal pad 22 to realize reading and outputting of visible light information received by the visible light pixel array 11 and infrared light information received by the infrared light pixel array 21.

[0077] As an example, the visible light chip 10 further includes a through-silicon via 13 located at the periphery of the visible light pixel array 11 to electrically connect the visible light chip 10 and the infrared light chip 20, more specifically, the through-silicon via 13 electrically connects the first interconnection metal pad 12 and the second interconnection metal pad 22.

[0078] Further, the aperture range of the through-silicon via 13 is 10-200 μm, including but not limited to 50 μm, 120 μm, 150 μm and 180 μm.

[0079] As an example, the detector further includes an electrical connection structure located between the visible light chip 10 and the infrared light chip 20 and connected with the through-silicon via 13, the electrical connection structure includes at least one of a bonding metal 31 and a vertical interconnection bridge 32. In the embodiment, the electrical connection structure is the bonding metal 31, and the visible light chip 10 and the infrared light chip 20 are connected by wafer-level bonding based on the bonding metal.

[0080] Further, the bonding metal 31 includes at least one of Ti, Pt, Au, Sn and Cu, and the bonding metal 31 can be a single layer or a stacked structure.

[0081] As an example, the detector further comprises a cavity 40a between the visible light pixel array 11 and the infrared light pixel array 21. In one aspect, the cavity is used to set up a structure layer such as a medium film, an anti-reflection film, a getter, etc. to improve the performance of the detector while ensuring the overall integration of the detector to achieve miniaturization. On the other hand, the cavity protects the infrared pixel array from physical damage and adverse effects of environmental factors. In addition, the cavity is also conducive to heat dissipation to maintain the stability and long-term reliability of the detector during operation, while facilitating the realization of the overall lightweight requirement of the detector.

[0082] In an example, the cavity 40a is open from one side of the visible light chip 10 towards the infrared light chip 20 and partially penetrates the visible light chip 10, i.e. the cavity 40a is obtained by etching based on the back of the wafer on which the visible light chip 10 is located. This can ensure the stability of the cavity structure while shortening the transmission path of infrared light in the visible light chip after penetrating the visible light pixel array, so as to reduce the loss during the propagation of infrared light and improve the detection accuracy of the detector to a certain extent.

[0083] Further, the depth of the cavity 40a ranges from 50 to 500 μm, including but not limited to 100 μm, 200 μm, 300 μm and 400 μm. The depth of the cavity 40a set in the above range can meet the accommodation of the structure layer such as the medium film, assist the infrared light pixel array to enhance the absorption of infrared light, and improve the accuracy of the image collected by the detector, while ensuring the structural stability and reliability of the visible light chip.

[0084] As an example, the detector further comprises a medium film 14 on one side of the visible light chip 10 towards the infrared light chip 20. In the present embodiment, the medium film 14 also covers the bottom wall of the cavity 40a. The medium film is used to realize electrical isolation of the area of the visible light chip and the infrared light chip except the signal interconnection structure, to ensure the working performance and reliability of the detector. When the detector comprises a medium film and a bonding metal, the cavity additionally comprises a bonding metal part and a medium film part around the part in addition to the part located in the visible light chip, to meet the good vacuum requirement.

[0085] As an example, the detector further comprises at least one of a visible light anti-reflection film 152 and an infrared light anti-reflection film 151, wherein the visible light anti-reflection film 152 is located on the side of the visible light chip 10 provided with the visible light pixel array 11, and the infrared light anti-reflection film 151 is located in the cavity 40a. In this embodiment, the detector comprises both the visible light anti-reflection film 152 and the infrared light anti-reflection film 151, and the infrared light anti-reflection film 151 also covers at least part of the surface of the dielectric film 14. The infrared light anti-reflection film is used to improve the high transmittance of infrared light in a specific wave band, so as to improve the accuracy of the detector. The visible light anti-reflection film is used to reduce the reflection of visible light by the visible light chip and increase the transmittance, so as to improve the detection accuracy of visible light. Preferably, the area of the infrared light anti-reflection film is larger than the area of the region where the visible light pixel array is located and the area of the region where the infrared light pixel array is located, and the area of the visible light anti-reflection film is larger than the area of the region where the visible light pixel array is located, so as to realize omnidirectional anti-reflection of visible light / infrared light.

[0086] Further, the material of the visible light anti-reflection film 152 comprises at least one of SiO2, SiN, Ge, ZnS, ZnSe and BaF, the material of the infrared light anti-reflection film 151 comprises at least one of Ge, ZnS, ZnSe and BaF, and any anti-reflection film can be a single-layer structure or a multi-layer structure, and the thickness of any anti-reflection film ranges from 0.5 to 2 μm, including but not limited to 0.8 μm, 1.2 μm and 1.5 μm.

[0087] As an example, the detector further comprises a getter layer 16 located in the cavity 40a. In this embodiment, the getter layer 16 is located on the bottom wall of the cavity 40a. The getter layer is used to adsorb and fix the gas possibly generated in the process of manufacturing the detector, especially in the process of bonding the wafer provided with the visible light chip and the wafer provided with the infrared light chip, so as to maintain the vacuum inside the cavity, thereby reducing the noise possibly caused by gas molecules and improving the sensitivity and signal quality of the detector.

[0088] Further, the material of the getter layer 16 comprises at least one of zirconium alloy, titanium alloy, palladium and stainless steel, or other alloy or metal material with high gettering performance.

[0089] As an example, the application field of the detector comprises at least one of aerospace remote sensing, military equipment, astronomical detection and security monitoring.

[0090] The multispectral in-situ fusion detector of the embodiment is characterized in that the visible light chip for detecting visible light information is vertically stacked and connected above the infrared light chip for detecting infrared light information, so that the infrared pixel array and the visible light pixel array are arranged in correspondence in the three-dimensional vertical space, and the visible light chip and the infrared light chip are electrically connected based on the through silicon via to realize electrical and signal interconnection of the two, the visible light chip and the infrared light chip are fused in the integrated manner, without complex optical path design, simplifying the detector structure, while meeting the process compatibility, fundamentally solving the problem that the existing multispectral detector cannot realize in-situ fusion detection of visible light and infrared light, and achieving all-weather and dynamic detection and identification of the detection target in a complex environment (for example, a high-speed motion scene), improving the accuracy and flexibility of visible light / infrared light fusion detection. In addition, through the design of the detector structure, such as the structures of cavities, antireflection films, and getters, the detection sensitivity and structural flexibility of the detector are further improved, while meeting the application requirements of miniaturization and light weight of the detector.

[0091] Embodiment two

[0092] The embodiment provides a manufacturing method of a multispectral in-situ fusion detector, referring to Figures 1 to 9 , the manufacturing method is used for manufacturing the detector structure as described in embodiment one or other suitable detector structure, and includes the following steps:

[0093] providing a visible light wafer and an infrared light wafer, the visible light wafer including at least one visible light pixel array, and the infrared light wafer including at least one infrared light pixel array;

[0094] connecting the visible light wafer above the infrared light wafer, wherein one side of the visible light wafer provided with the visible light pixel array and one side of the infrared light wafer provided with the infrared light pixel array are both arranged upward, and the infrared light pixel array and the visible light pixel array are arranged in correspondence in the vertical direction.

[0095] Next, the manufacturing method is exemplarily introduced.

[0096] First, referring to Figure 2 and Figure 9 , a visible light wafer 100 and an infrared light wafer 200 are provided, the visible light wafer 100 including at least one visible light pixel array 11, and the infrared light wafer 200 including at least one infrared light pixel array 21.

[0097] As an example, referring to Figure 2, which is a schematic diagram of a partial cross-section of a visible light wafer, the visible light wafer 100 further comprises a first interconnection metal pad 12, the first interconnection metal pad 12 is electrically connected with the visible light pixel array 11, and the upper surface of the first interconnection metal pad 12 is flush with the front surface of the visible light wafer 100, for the avoidance of doubt, the "front surface of the visible light wafer" refers to the surface of the visible light wafer that is closer to the visible light pixel array, and the "back surface of the visible light wafer" refers to the surface of the visible light wafer that is farther away from the visible light pixel array, Figure 2 may be regarded as a schematic diagram of a cross-section corresponding to a visible light pixel array and its peripheral region, or as a schematic diagram of a cross-section of a visible light chip obtained after subsequent segmentation.

[0098] For example, referring to Figure 3 , the manufacturing method further comprises the step of forming a through-silicon via 13 in the visible light wafer 100, the through-silicon via 13 is located in the periphery of the visible light pixel array 11.

[0099] In an example, referring to Figure 2 and Figure 3 , forming the through-silicon via 13 comprises the following steps:

[0100] Place the visible light wafer 100 with the side provided with the first interconnection metal pad 12 facing down; form a first photoresist layer (not shown) on the back surface of the visible light wafer 100 and perform photolithography to obtain a patterned first photoresist layer; etch the visible light wafer 100 based on the patterned first photoresist layer to obtain a via (not labeled), the via extends from the back surface of the visible light wafer 100 to expose at least a portion of the first interconnection metal pad 12; remove the first photoresist layer and clean the via; form an insulating medium layer (not shown) on the sidewall of the via; sequentially form a barrier layer (not shown) and a seed layer (not shown) on the inner wall of the via; form a conductive layer (not labeled) to fill the via, the conductive layer is also located on the back surface of the visible light wafer 100; planarize the conductive layer to only retain the portion of the conductive layer located in the via to obtain the through-silicon via 13.

[0101] Further, the method of forming the barrier layer and the seed layer both comprises sputtering, the method of forming the conductive layer comprises electroplating, the material of the conductive layer comprises Cu; the method of planarizing the conductive layer comprises chemical mechanical polishing (CMP).

[0102] For example, referring to Figure 4 , the manufacturing method further comprises the step of forming a cavity 40a between the visible light pixel array 11 and the infrared light pixel array 21.

[0103] Furthermore, forming the cavity 40a includes the following steps: forming a second photoresist layer (not shown) on the back side of the visible light wafer 100 and performing photolithography to obtain a patterned second photoresist layer, and etching the visible light wafer 100 based on the patterned second photoresist layer to obtain the cavity 40a, that is, the cavity 40a opens from the back side of the visible light wafer 100 and extends toward the front side of the visible light wafer 100 to partially penetrate the visible light wafer 100.

[0104] As an example, see Figure 5 After forming the cavity 40 a , the method further includes forming a dielectric film 14 on the bottom wall of the cavity 40 a and the back side of the visible light wafer 100 .

[0105] Further, see Figure 6 After forming the cavity 40a, the step further includes forming an infrared anti-reflection film 151 on the bottom wall of the cavity 40a. When the dielectric film 14 is formed, the infrared anti-reflection film 151 is located on the side of the dielectric film 14 facing away from the visible light wafer 100 and covers the infrared light pixel array 21. The method for forming the infrared anti-reflection film 151 includes a lift-off process.

[0106] As an example, Figure 6 As shown, the manufacturing method further includes the step of forming a getter layer 16 , the getter layer 16 is located in the cavity 40 a , and the manufacturing method of the getter layer 16 includes a lift-off process.

[0107] As an example, see Figure 7 The fabrication method further includes the step of removing the portion of the dielectric film 14 covering the TSV 13 to open the TSV 13, thereby exposing at least a portion of the conductive layer within the TSV 13 to facilitate subsequent connection to an electrical connection structure. The TSV opening step is performed before attaching the visible light wafer to the infrared light wafer. Preferably, this step is performed after forming the infrared antireflection film and getter layer to prevent other film layers from filling the opened area and subsequently causing insufficient etching, which could interfere with electrical connection and signal transmission.

[0108] As an example, see Figure 8Before connecting the visible light wafer 100 above the infrared light wafer 200, a step of forming an electrical connection structure is included, the electrical connection structure is located between the visible light wafer 100 and the infrared light wafer 200 and connected with the through silicon via 13, and the electrical connection structure includes at least one of a bonding metal 31 and a vertical interconnect bridge 32. In this embodiment, the electrical connection structure is the bonding metal 31, and the visible light chip 10 and the infrared light chip 20 are connected by wafer-level bonding through the bonding metal 31. The bonding metal 31 is filled in the opening area above the through silicon via 13 to be connected with the through silicon via 13. The manufacturing method of the bonding metal 31 includes a lift off process.

[0109] As an example, please refer to Figure 9 The infrared light wafer 200 also includes a second interconnection metal pad 22 and a readout circuit (not shown), the second interconnection metal pad 22 is electrically connected with the infrared light pixel 211, and the readout circuit is also electrically connected with the infrared light pixel 211.

[0110] Please refer to Figure 10 The visible light wafer 100 is connected above the infrared light wafer 200, wherein one side of the visible light wafer 100 provided with the visible light pixel array 11 and one side of the infrared light wafer 200 provided with the infrared light pixel array 21 are both arranged upward (i.e. the photosensitive surface of the visible light pixel array 11 and the photosensitive surface of the infrared light pixel array 21 are both arranged toward the incident direction of the incident light), and the infrared light pixel array 21 and the visible light pixel array 11 are arranged in vertical correspondence.

[0111] As an example, connecting the visible light wafer 100 above the infrared light wafer 200 includes the following steps:

[0112] As shown in Figure 10 The back of the visible light wafer 100 is placed downward above the infrared light wafer 200, and the cavity 40a is located above the infrared light pixel array 21. When the electrical connection structure is formed on the back of the visible light wafer 100, it is also necessary to ensure that the electrical connection structure is at least partially aligned with the second interconnection metal pad 22;

[0113] Bonding is performed to bond the visible light wafer 100 and the infrared light wafer 200, more specifically, the bonding is performed to connect the electrical connection structure and the second interconnection metal pad 22.

[0114] As an example, as shown in Figure 1As shown, the manufacturing method further comprises a step of forming a visible light anti-reflection film 152 on the front surface of the visible light wafer 100 and covering the visible light pixel array 11, the forming method of the visible light anti-reflection film 152 comprises a lift off process. The step of forming the visible light anti-reflection film can be performed before or after the visible light wafer is connected to the infrared light wafer, and preferably after the connection of the two wafers to avoid damaging the surface of the visible light anti-reflection film and weakening the overall performance of the detector structure during the connection of the two wafers.

[0115] As an example, please refer to Figure 10 and Figure 1 , wherein, Figure 1 may be regarded as a partial enlarged view in Figure 10 , the manufacturing method further comprises a step of dividing the structure after the visible light wafer 100 is connected to the infrared light wafer 200 to obtain at least one detector (vertical division is performed along the dotted line in Figure 10 ), the detector comprises a visible light chip 10 obtained by dividing the visible light wafer 100 and an infrared light chip 20 obtained by dividing the infrared light wafer 200, wherein the visible light chip 10 comprises the visible light pixel array 11, the infrared light chip 20 comprises the infrared light pixel array 21, and the visible light pixel array 11 and the infrared light pixel array 21 are arranged in vertical correspondence.

[0116] As an example, the visible light wafer 100 comprises one or more visible light pixel arrays 11, the infrared light wafer 200 comprises one or more infrared light pixel arrays 21, and the number of visible light pixel arrays 11 contained in the visible light wafer 100 is preferably consistent with the number of infrared light pixel arrays 21 contained in the infrared light wafer 200.

[0117] Further, when the visible light wafer 100 only comprises one visible light pixel array 11 and the infrared light wafer 200 only comprises one infrared light pixel array 21, the above-mentioned dividing step is equivalent to removing the excess area of the two wafers that does not form devices or structures to reduce the overall volume of the detector and thus achieve miniaturization and light weight; when the visible light wafer 100 comprises a plurality of visible light pixel arrays 11 and the infrared light wafer 200 comprises a plurality of infrared light pixel arrays 21, the above-mentioned dividing step is equivalent to dividing each of the two wafers into a plurality of chips, and the two chips arranged in correspondence constitute a detector structure.

[0118] It should be noted that when the number of visible light pixel arrays (or infrared light pixel arrays) in the visible light wafer (or infrared light wafer) and the visible light chip (or infrared light chip) is inconsistent, each of the above structures is correspondingly provided as multiple, that is, the visible light wafer includes multiple visible light device regions arranged at intervals, and the visible light device region is formed with a visible light pixel array and a first interconnection metal pad in the periphery thereof; the infrared light wafer includes multiple infrared light device regions arranged at intervals and provided with an infrared light pixel array, and the infrared light device region is formed with an infrared light pixel array and a second interconnection metal pad in the periphery thereof. When the two wafers are connected vertically, each visible light device region corresponds to an infrared light device region; and then a plurality of cavities, a plurality of electrical connection structures, a plurality of visible light / infrared light anti-reflection films, and a plurality of getter layers are formed on the back of the visible light wafer corresponding to the visible light region, so as to ensure that each detector has the above structures, and the same structure / structure layer is preferably made in the same step, thereby saving process steps and ensuring the consistency of the detector structure.

[0119] The manufacturing method of the detector of the embodiment is to process and manufacture the visible light wafer and the infrared light wafer respectively, then stack and connect the two wafers in three-dimensional space, and then cut according to actual needs to obtain a detector structure composed of a visible light chip and an infrared light chip stacked vertically, so as to realize multispectral vertical in-situ fusion detection of visible light and infrared light, and the manufacturing method is simple, the manufacturing process is compatible, and the production is easy to scale.

[0120] Embodiment three

[0121] The embodiment provides a multispectral in-situ fusion detector (hereinafter referred to as "detector"). The difference between the embodiment and embodiment one is that the structure of the cavity, the electrical connection structure, and the overall structure of the visible light chip are different, and the detector of the embodiment is not provided with a visible light anti-reflection film but is provided with a microlens structure. Please refer to Figure 10 , which shows a cross-sectional structure diagram of the detector. The detector includes a visible light chip 10 and an infrared light chip 20.

[0122] Specifically, the visible light chip 10 includes a visible light pixel array 11, one side of the visible light chip 10 provided with the visible light pixel array 11 faces upward, the infrared light chip 20 is located below the visible light chip 10, the infrared light chip 20 includes an infrared light pixel array 21, one side of the infrared light chip 20 provided with the infrared light pixel array 21 faces upward, and the infrared light pixel array 21 and the visible light pixel array 11 are correspondingly arranged in the vertical direction to realize vertical in-situ fusion detection of visible light / infrared light.

[0123] As an example, the detector further comprises a cavity 40b between the visible light pixel array 11 and the infrared light pixel array 21.

[0124] Further, the detector further comprises a dike 50 between the visible light chip 10 and the infrared light chip 20 to form the cavity 40b, and the infrared light pixel array 21 is located in the cavity 40b.

[0125] Further, the width of the dike 50 ranges from 50 to 300 μm, including but not limited to 80 μm, 150 μm, 200 μm and 250 μm; the height of the dike 50 ranges from 50 to 200 μm, including but not limited to 80 μm, 120 μm, 150 μm and 180 μm; the material of the dike 50 includes at least one of silicon and PI.

[0126] As an example, the detector further comprises an electrical connection structure between the visible light chip 10 and the infrared light chip 20 and connected with the through silicon via 13, which includes at least one of a bonding metal 31 and a vertical interconnect bridge 32. In the embodiment, the electrical connection structure is the vertical interconnect bridge 32, and the visible light chip 10 and the infrared light chip 20 are connected by wafer-level bonding through the vertical interconnect bridge 32. When the cavity 40b is formed based on the dike 50, the vertical interconnect bridge 32 is also located at the periphery of the dike 50.

[0127] Further, the vertical interconnect bridge 32 includes at least one of a TSV silicon bridge and a Cu conductive column.

[0128] As an example, the detector further comprises a first dielectric layer 17 arranged on the side of the visible light chip 10 facing the infrared light chip 20, and a groove 171 opening from the side of the dielectric layer facing the infrared light chip 20 and extending upward to partially penetrate the first dielectric layer 17, and the part of the first dielectric layer 17 above the groove 171 forms a microlens. Preferably, the number and projection area of the grooves are consistent with the infrared light pixels 2. Further, the curvature of the groove is reasonably designed based on the vertical distance between the first dielectric layer and the infrared light pixel, the size of the infrared light pixel and other parameters, which are not limited here.

[0129] Further, the thickness of the first dielectric layer 17 ranges from 0.1 to 10 μm, including but not limited to 2 μm, 4 μm, 6 μm and 8 μm; the material of the first dielectric layer 17 includes at least one of SiO2, Si2N3 and TiO2.

[0130] The detector of the embodiment adjusts the cavity structure and the structure for enhancing infrared light on the basis of the structure of the first embodiment, improves the design and production flexibility of the detector structure on the premise of improving the accuracy of in-situ fusion detection of visible light and infrared light.

[0131] Embodiment four

[0132] The embodiment provides a manufacturing method of a multispectral in-situ fusion detector, which is used for manufacturing the detector structure as described in the third embodiment or other suitable detector structure, please refer to Figure 2 、 Figure 3 、 Figures 9 to 16 for the example introduction of the manufacturing method.

[0133] First, as shown in Figure 2 and Figure 9 , a visible light wafer 100 and an infrared light wafer 200 are provided, the visible light wafer 100 includes at least one visible light pixel array 11, and the infrared light wafer 200 includes at least one infrared light pixel array 21.

[0134] As an example, as shown in Figure 3 , the manufacturing method further includes the step of forming a through silicon via 13 in the visible light wafer 100, and the through silicon via 13 is located at the periphery of the visible light pixel array 11.

[0135] As an example, before forming the through silicon via 13, the step of back-thinning the visible light wafer 100 is further included. Since the cavity 40b in the detector of the embodiment is not formed based on the back etching of the visible light wafer 100 but is composed of the cofferdam 50 arranged in the two wafers, the thinning process is needed before processing the back of the visible light wafer 100, to ensure the miniaturization and lightweight requirements of the final detector structure, and to avoid the influence of the thickness of the visible light chip obtained subsequently on the efficient propagation of infrared light.

[0136] Further, the method of thinning includes at least one of mechanical thinning, wet thinning, dry thinning and CMP thinning.

[0137] Further, the thickness of the thinned visible light wafer ranges from 400 to 600 μm, including but not limited to 450 μm, 500 μm and 550 μm.

[0138] As an example, as shown in Figure 12 , after forming the through silicon via 13, the step of forming a microlens (not labeled) on the visible light wafer 100 is further included, and the forming of the microlens includes the following steps:

[0139] forming a first dielectric layer 17 on the thinned visible light wafer 100, the first dielectric layer 17 covering the thinned side of the visible light wafer 100;

[0140] performing dry etching or wet etching to form a plurality of grooves 171 in the first dielectric layer 17, the grooves 171 being open from the side of the first dielectric layer 17 away from the visible light wafer 100 and extending towards the visible light wafer 100 to partially penetrate the first dielectric layer 17, wherein the portion of the first dielectric layer 17 above the grooves 171 constitutes the microlens.

[0141] As an example, as shown in Figure 13 , after forming the microlens, the method further includes forming a gettering layer 16 and etching the portion of the dielectric layer above the through silicon via 13 to open the through silicon via 13, wherein the gettering layer 16 is located at the periphery of the area where the microlens is located to avoid affecting the infrared enhancement function of the microlens.

[0142] As an example, please refer to Figure 9 and Figure 14 , the method further includes forming a cofferdam 50, the cofferdam 50 being located above the infrared light wafer 200, the cofferdam 50 also being located at the periphery of the infrared light pixel array 21 to ensure that the infrared light pixel array 21 is located within the cavity region formed subsequently, and further, the cofferdam 50 is also located between the second interconnection metal pad 22 and the infrared light pixel array 21 (which can be understood in combination with Figure 16 ).

[0143] As an example, as shown in Figure 15 , before connecting the visible light wafer 100 above the infrared light wafer 200, the method includes forming an electrical connection structure, the electrical connection structure being located between the visible light wafer 100 and the infrared light wafer 200 and connected with the through silicon via 13, the electrical connection structure including at least one of a bonding metal 31 and a vertical interconnection bridge 32. In this embodiment, the electrical connection structure is a vertical interconnection bridge 32, and the visible light chip 10 and the infrared light chip 20 are connected by wafer-level bonding through the vertical interconnection bridge 32. In this embodiment, the vertical interconnection bridge 32 is attached to the infrared light wafer 200 and connected with the second interconnection metal pad 22.

[0144] Then, step S2 is executed to connect the visible light wafer 100 to the top of the infrared light wafer 200, wherein the side of the visible light wafer 100 provided with the visible light pixel array 11 and the side of the infrared light wafer 200 provided with the infrared light pixel array 21 are both arranged upward, and the infrared light pixel array 21 and the visible light pixel array 11 are arranged correspondingly in the vertical direction.

[0145] As an example, connecting the visible light wafer 100 to the infrared light wafer 200 includes the following steps:

[0146] like Figure 10 As shown, the visible light wafer 100 is placed with its backside facing downward on top of the infrared light wafer 200. The visible light wafer 100, the dam 50, and the infrared light wafer 200 are sequentially connected to form a cavity 40b, and the infrared pixel array is located within the cavity 40b. When an electrical connection structure is formed above the infrared light wafer 200, it is also necessary to ensure that the electrical connection structure (such as a vertical interconnect bridge) is at least partially aligned with the through-silicon via 13.

[0147] Bonding is performed to bond the visible light wafer 100 to the infrared light wafer 200 . More specifically, bonding is performed to connect the electrical connection structure to the through silicon via 13 .

[0148] It should be noted that, although the present embodiment uses an example of forming a microlens structure on the back side of the visible light wafer to enhance infrared light, in other embodiments, an infrared light anti-reflection film as described in the first embodiment can be directly produced on the back side of the thinned visible light wafer to enhance infrared light. In addition, although not shown in the figure, the production method of the present embodiment may also include the step of forming a visible light anti-reflection film on the front side of the visible light wafer, and also includes the step of dividing the structure after the visible light wafer and the infrared light wafer are connected to obtain at least one detector, which will not be repeated here.

[0149] Example 5

[0150] This embodiment provides a multi-spectral in-situ fusion detector (hereinafter referred to as the "detector"). The difference between this embodiment and Example 3 is that a surface structure is formed in this embodiment while a microlens structure is formed in Example 3. Please refer to the figure, which shows a schematic diagram of the cross-sectional structure of the detector. The detector includes a visible light chip 10 and an infrared light chip 20.

[0151] Specifically, the visible light chip 10 includes a visible light pixel array 11, the infrared light chip 20 is located below the visible light chip 10, one side of the visible light chip 10 provided with the visible light pixel array 11 faces upward, the infrared light chip 20 includes an infrared light pixel array 21, and one side of the infrared light chip 20 provided with the infrared light pixel array 21 faces upward, the infrared light pixel array 21 and the visible light pixel array 11 are vertically correspondingly arranged to realize vertical in-situ fusion detection of visible light / infrared light.

[0152] As an example, the detector further includes a surface structure 181, the surface structure 181 is arranged on one side of the visible light chip 10 facing the infrared light chip 20, and the surface structure 181 is used for selecting infrared light of a preset wavelength.

[0153] Further, the surface structure 181 includes at least one of a grating grating structure, a sawtooth grating structure, and a metasurface structure.

[0154] As an example, the detector further includes a cofferdam 50, the cofferdam 50 is located between the visible light chip 10 and the infrared light chip 20 to form a cavity 40c, and the infrared light pixel array 21 is located in the cavity 40c.

[0155] The detector of the embodiment, on the basis of the structure of the second embodiment, changes the microlens structure to a surface structure, realizes selection of specific band infrared light under the premise of in-situ fusion detection accuracy of visible light and infrared light, and improves the application flexibility of the detector.

[0156] Embodiment six

[0157] The embodiment provides a manufacturing method of a multi-spectrum in-situ fusion detector, which is used for manufacturing the detector as described in the fifth embodiment or other suitable detector structures, please refer to Figure 2 、 Figure 3 、 Figure 9 、 Figures 14 to 18 The manufacturing method is exemplarily illustrated.

[0158] First, please refer to Figure 2 and Figure 9 , a visible light wafer 100 and an infrared light wafer 200 are provided, the visible light wafer 100 includes at least one visible light pixel array 11, and the infrared light wafer 200 includes at least one infrared light pixel array 21;

[0159] As an example, as Figure 3As shown, the manufacturing method further comprises a step of forming a through-silicon via 13 in the visible light wafer 100, the through-silicon via 13 being located at the periphery of the visible light pixel array 11. In this embodiment, the step of forming the through-silicon via 13 is preceded by a step of back-thinning the visible light wafer 100.

[0160] As an example, as shown in Figure 18 As shown, the step of forming the through-silicon via 13 is followed by a step of forming a surface structure 181 on the visible light wafer 100, the step of forming the surface structure 181 comprising the following steps:

[0161] A second dielectric layer 18 is formed on the thinned visible light wafer 100, the second dielectric layer 18 covering the thinned side of the visible light wafer 100; the second dielectric layer 18 is etched to obtain the surface structure 181, the surface structure 181 being located below the visible light pixel array 11 (for the case where the visible light chip is located above the infrared light chip).

[0162] As an example, the step of forming the surface structure 181 is followed by a step of forming a getter layer 16, wherein the getter layer 16 is located on the second dielectric layer 18 and at the periphery of the region where the surface structure 181 is located.

[0163] As an example, as shown in Figure 9 and Figure 14 As shown, the manufacturing method further comprises a step of forming a dam 50, the dam 50 being located above the infrared light wafer 200, the dam 50 also being located at the periphery of the infrared light pixel array 21.

[0164] As an example, the step of connecting the visible light wafer 100 above the infrared light wafer 200 is preceded by a step of forming an electrical connection structure, the electrical connection structure being located between the visible light wafer 100 and the infrared light wafer 200 and being connected to the through-silicon via 13, the electrical connection structure comprising at least one of a bonding metal 31 and a vertical interconnect bridge 32. In this embodiment, the electrical connection structure is a vertical interconnect bridge 32. In this embodiment, the vertical interconnect bridge 32 is attached to the infrared light wafer 200 and is connected to the second interconnection metal pad 22.

[0165] Then, the visible light wafer 100 is connected above the infrared light wafer 200, wherein one side of the visible light wafer 100 provided with the visible light pixel array 11 and one side of the infrared light wafer 200 provided with the infrared light pixel array 21 are both arranged upward, and the infrared light pixel array 21 and the visible light pixel array 11 are arranged in vertical correspondence.

[0166] It should be noted that the manufacturing method also includes the step of segmenting the structure after the visible light wafer 100 and the infrared light wafer 200 are connected to obtain at least one detector, which will not be described here.

[0167] In summary, the multispectral in-situ fusion detector of the present application vertically stacks the visible light chip for detecting visible light information on the infrared light chip for detecting infrared light information, so that the infrared pixel array and the visible light pixel array are arranged in a corresponding relationship in a three-dimensional vertical space, and the visible light chip and the infrared light chip are electrically connected based on the through silicon via to realize electrical and signal interconnection of the two, the visible light chip and the infrared light chip are fused from the integration mode, without complex optical path design, simplifying the detector structure, while meeting the process compatibility, fundamentally solving the problem of existing multispectral detectors that cannot realize in-situ fusion detection of visible light and infrared light, and achieving all-weather and dynamic detection and recognition of the detection target in a complex environment (for example, a high-speed motion scene), improving the accuracy and flexibility of visible light / infrared light fusion detection. In addition, through the design of the detector structure, such as the functional structures of cavities, antireflection films, getters, microlenses and surface structures, the detection sensitivity and structural flexibility of the detector are further improved, while meeting the application requirements of miniaturization and lightweight of the detector. The manufacturing method of the multispectral in-situ fusion detector of the present application processes and manufactures the visible light wafer and the infrared light wafer respectively, then stacks and connects them in a three-dimensional space, and then segments them according to actual needs to obtain a detector structure composed of vertically stacked visible light chips and infrared light chips, realizing multispectral vertical in-situ fusion detection of visible light and infrared light, and the manufacturing method is simple, the manufacturing process is compatible, and it is easy to mass produce. Therefore, the present application effectively overcomes the shortcomings of the prior art and has high industrial utilization value.

[0168] The above embodiments only exemplarily illustrate the principles and effects of the present application, and are not intended to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical thought disclosed by the present application should be covered by the claims of the present application.

Claims

1. A multispectral in situ hybridization probe, characterized by, The detector comprises: a visible light chip comprising a visible light pixel array, the visible light chip having one side provided with the visible light pixel array facing upward; an infrared light chip connected below the visible light chip, the infrared light chip comprising an infrared light pixel array, and the infrared light chip having one side provided with the infrared light pixel array facing upward, the infrared light pixel array and the visible light pixel array being vertically correspondingly arranged to realize vertical in-situ fusion detection of visible light / infrared light, the vertical corresponding arrangement being that a vertical projection of a region where the infrared light pixel array is located substantially coincides with a vertical projection of a region where the visible light pixel array is located; the visible light chip and the infrared light chip are bonded and connected, wherein one side of the visible light chip away from the infrared light chip is provided with a first interconnection metal pad, one side of the infrared light chip close to the visible light chip is provided with a second interconnection metal pad, and the visible light chip further comprises a through silicon via, the through silicon via being located at a periphery of the visible light pixel array, one end of the through silicon via being electrically connected with the first interconnection metal pad, and the other end of the through silicon via being electrically connected with the second interconnection metal pad, so as to electrically connect the visible light chip and the infrared light chip.

2. The multispectral in situ hybridization probe of claim 1, wherein: The visible light pixel array comprises a plurality of visible light pixels arranged in a first manner, the infrared light pixel array comprises a plurality of infrared light pixels arranged in a second manner, and one infrared light pixel is correspondingly arranged with one or more visible light pixels.

3. The multispectral in situ hybridization probe of claim 1, wherein: The detector further comprises an electrical connection structure, the electrical connection structure being located between the visible light chip and the infrared light chip and being connected with the through silicon via, and the electrical connection structure comprises at least one of a bonding metal and a vertical interconnection bridge.

4. The multispectral in situ hybridization probe of claim 1, wherein: The detector further comprises a cavity, the cavity being located between the visible light pixel array and the infrared light pixel array.

5. The multispectral in situ hybridization probe of claim 4, wherein: The cavity is open on one side of the visible light chip facing the infrared light chip and partially penetrates the visible light chip.

6. The multispectral in situ hybridization probe of claim 4, wherein: The detector comprises a cofferdam, the cofferdam being located between the visible light chip and the infrared light chip to form the cavity, and the infrared light pixel array is located in the cavity.

7. The multispectral in situ hybridization probe of claim 4, wherein: The detector further comprises at least one of a visible light anti-reflection film and an infrared light anti-reflection film, wherein the visible light anti-reflection film is located on one side of the visible light chip provided with the visible light pixel array, and the infrared light anti-reflection film is located in the cavity.

8. The multispectral in situ hybridization probe of claim 1, wherein: The visible light chip comprises a front-illuminated image sensor or a back-illuminated image sensor.

9. The multispectral in situ hybridization probe of claim 1, wherein: The detector further comprises a dielectric layer and a groove, the dielectric layer being arranged on one side of the visible light chip facing the infrared light chip, the groove being open on one side of the dielectric layer facing the infrared light chip and extending upward to partially penetrate the dielectric layer, and a part of the dielectric layer above the groove forms a microlens.

10. The multispectral in situ hybridization probe of claim 1, wherein: The detector further comprises a surface structure, the surface structure being arranged on one side of the visible light chip facing the infrared light chip to select infrared light of a preset wavelength.

11. The multispectral in situ hybridization probe of claim 10, wherein: The surface structure comprises at least one of a grating structure, a sawtooth grating structure and a metasurface structure.

12. A method of fabricating a multispectral in situ fusion probe, comprising: The method comprises the following steps: The application provides a visible light wafer and an infrared light wafer, the visible light wafer comprises at least one visible light pixel array, and the infrared light wafer comprises at least one infrared light pixel array; the visible light wafer is connected above the infrared light wafer, wherein one side of the visible light wafer provided with the visible light pixel array and one side of the infrared light wafer provided with the infrared light pixel array are both arranged upwards, and the infrared light pixel array and the visible light pixel array are vertically corresponding arranged, the vertical corresponding arrangement is that a vertical projection of an area where the infrared light pixel array is located and a vertical projection of an area where the visible light pixel array is located are substantially coincident. The visible light wafer and the infrared light wafer are bonded and connected, wherein one side of the visible light wafer away from the infrared light wafer is provided with a first interconnection metal pad, one side of the infrared light wafer close to the visible light wafer is provided with a second interconnection metal pad, the visible light wafer further comprises a through silicon via, the through silicon via is located at the periphery of the visible light pixel array, one end of the through silicon via is electrically connected with the first interconnection metal pad, and the other end of the through silicon via is electrically connected with the second interconnection metal pad, so as to electrically connect the visible light wafer and the infrared light wafer.

13. The method of claim 12, wherein: The application further comprises the following steps: The structure after the visible light wafer and the infrared light wafer are connected is segmented to obtain at least one detector, the detector comprises a visible light chip segmented based on the visible light wafer and an infrared light chip segmented based on the infrared light wafer, wherein the visible light chip comprises the visible light pixel array, and the infrared light chip comprises the infrared light pixel array.

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