A high-power microwave millimeter-wave load with a π-type resistor attenuation network

Abstract

The present invention belongs to microwave millimeter wave technology, specifically, is a high-power microwave millimeter wave load that introduces a π-type resistance attenuation network, comprising an electromagnetic field constraint carrier in a groove structure, wherein a load body adapted to a recessed portion is arranged in the electromagnetic field constraint carrier, and the load body and the electromagnetic field constraint carrier are bonded together by gold wires; multiple π-type resistance attenuation networks are introduced into the propagation path of the load body, and the incident and reflected energy of the input signal are simultaneously attenuated in multiple stages, firstly, the energy intensity reaching a terminal 50Ω load is reduced, the heat dissipation performance of the load is enhanced, and the power capacity of the load is improved; secondly, the reflected energy is attenuated again, the energy intensity reflected back to the input port is reduced, and the overall standing wave performance of the load is improved.

Description

Technical Field

[0001] The invention belongs to microwave millimeter wave technology, in particular to a high-power microwave millimeter wave load introducing a π-type resistance attenuation network. Background Art

[0002] With the development of science and technology, low-cost, high-power, small-size power devices play a very important role in microwave circuits.

[0003] High-power microwave loads are mainly used to absorb high-power microwave energy at the terminals of microwave circuits. While protecting microwave equipment from overload, they must also meet the requirement of keeping the standing wave ratio as small as possible within the working frequency band to prevent the reflected signal from being reflected back to the previous circuit components and affecting the performance of the previous circuit. Surface mount resistors (SMD) are a common form of high-power microwave loads. Because of their advantages such as light weight, relatively low cost, and high power density, they are easy to mass produce and apply, and are widely used in various RF microwave systems.

[0004] At present, the main SMD high-power microwave loads in the world, such as the high-power loads based on 1310 package: EMCtechnology ® CT1310D and Yantel ® TD1310, use diamond produced by chemical vapor deposition process as the dielectric plate substrate, the input port material is nickel-plated gold, the ground terminal surface is gold-plated platinum, and the resistance layer is TaN (tantalum nitride) resistance film. The overall performance parameters are as follows:

[0005] Resistance: 50Ω±5%;

[0006] Length, width and height: 3.33*2.67*0.38 (units: mm) Working frequency band: DC-14GHz;

[0007] Input power: 125Watts;

[0008] Peak power: 5000Watts (1 μs pulse width / 1% duty cycle);

[0009] VSWR( VSWR ):1.40:1Max

[0010] Working temperature: -55°C-+150°C, storage temperature: -55°C-+150°C;

[0011] Temperature coefficient: ±200PPM / °C Max.

[0012] However, in the actual application of microwave circuits, the response of the above high-power load to high-frequency signals is not ideal, which is reflected in the following aspects:

[0013] 1. Low operating frequency band: The nominal maximum operating frequency of this commercial load is only 14GHz, and the standing wave ratio at this frequency is 1.4. However, in actual use, due to external factors such as processing errors, assembly tolerances and gold wire bonding, the actual standing wave ratio is often worse than the nominal value;

[0014] 2. The standing wave is relatively large: In order to prevent the high-power reflected signal from damaging the front-stage components, the reflection coefficient is required to be as close to 1:1 as possible in the application of high-power microwave circuits. The high-power load is guaranteed to be better than 1.40:1 within the nominal operating frequency band. This indicator is completely sufficient for low-power and medium-power loads, but for high-power loads (over 100W), due to the large injection power, a smaller standing wave ratio will also have a larger absolute power reflection signal, so there is an objective requirement to further improve the standing wave ratio of the resistive load.

[0015] In the face of the application needs of high-power equipment in scenarios such as military electronic countermeasures and long-distance communications, continuously improving the power capacity and working performance of microwave circuits, and designing and realizing a low-cost, wide-band, low-standing-wave-ratio high-power load will have great engineering significance for the actual application and development of high-power microwave circuits. Summary of the invention

[0016] The purpose of the present invention is to design and realize a low-cost, wide-band, low-standing-wave-ratio high-power microwave millimeter-wave load in view of the above-mentioned problems and shortcomings, and utilize the characteristics of a π-type resistor attenuation network, combined with the traditional circuit structure of a microstrip transmission line terminal connected to a matching load, to realize a step-by-step attenuation of power, and to improve the power capacity of the existing SMD high-power load, and to reduce the risk of local overheating of a single attenuation unit of the traditional load; the working bandwidth is expanded by a π-type resistor attenuation network, the standing wave ratio within the working frequency band is improved, and the influence of signal reflection on the preceding circuit in the high-power microwave circuit is further reduced.

[0017] To achieve the above-mentioned purpose of the invention, the technical solution of the present invention is as follows:

[0018] A high-power microwave millimeter wave load introducing a π-type resistance attenuation network, comprising an electromagnetic field constraint carrier in a groove structure, a load body adapted to the recessed portion being arranged in the electromagnetic field constraint carrier, and the load body and the electromagnetic field constraint carrier being bonded together by gold wire;

[0019] The load body comprises a dielectric layer substrate, on which a gold-plated contact, a tantalum nitride resistor film, at least one π-type resistor attenuation network, and a segmented microstrip transmission line are arranged; the gold-plated contact adopts the same structure as the electromagnetic field constraint carrier, and the groove opening directions of the two are consistent; the tantalum nitride resistor film is arranged at the bottom of the groove of the gold-plated contact and does not contact the inner side wall of the groove of the gold-plated contact; the segmented microstrip transmission line coincides with the midline of the width W_sub direction of the gold-plated contact groove, one end of which is connected to the tantalum nitride resistor film, and the other end extends to the top opening of the groove of the gold-plated contact; the π-type resistor attenuation network is arranged between the tantalum nitride resistor film and the groove opening of the gold-plated contact, wherein the middle resistor is connected to the segmented microstrip transmission line, and the side resistor is connected to the gold-plated contact.

[0020] Furthermore, when there are multiple π-type resistance attenuation networks, the multiple π-type resistance attenuation networks are arranged in sequence along the length direction of the segmented microstrip transmission line, the middle resistor of each π-type resistance attenuation network is connected to the segmented microstrip transmission line, and the side resistors are connected to the gold-plated contacts.

[0021] Furthermore, in order to reduce standing waves, densely arranged gold wires are used to connect the gold-plated contacts and the electromagnetic field constraint carrier to achieve a good grounding effect.

[0022] Furthermore, the square resistance of the π-type resistor and the tantalum nitride resistor film is 50Ω / □.

[0023] Furthermore, the dielectric layer substrate is made of diamond with a thermal conductivity of W / (m·K).

[0024] Furthermore, the electromagnetic field confinement carrier is prepared by copper-gold plating.

[0025] Furthermore, the size of the dielectric layer substrate is slightly smaller than the size of the groove portion of the electromagnetic field confinement carrier.

[0026] Furthermore, the segmented microstrip transmission line is composed of three microstrip line segments with different impedances, the lengths of the three microstrip line segments with different impedances are msL_1, msL_2, msL_3, and msL_4, respectively, and the widths are all ms_W; the length of the dielectric layer substrate is L_sub, and the width is W_sub; the length of the groove of the gold-plated contact is L_pad, the width is W_sub, and the characteristic width is W_pad; the length of the tantalum nitride resistor film is L_TaN, and the width is equal to the length.

[0027] Furthermore, the length of the middle resistor of the π-type resistor attenuation network is equal to the width of the segmented microstrip transmission line, both of which are ms_W. The width is determined by the theoretical calculation value of the π-type resistor attenuation network and the resistance value formula based on 50Ω square resistance. The length of the side resistor of the π-type resistor attenuation network is L_side, and the width is determined by the theoretical calculation value of the π-type resistor attenuation network and the resistance value formula based on 50Ω square resistance. The calculation formula of the π-type resistor attenuation network is shown in formula (1) (2):

[0028] (1)

[0029] (2)

[0030] in, dB Indicates decibel value ，R 1 is the middle resistor of the π-type resistor attenuation network, R 2 is the side resistance of the π-type resistance attenuation network, Z 0 is the characteristic impedance of the microstrip line.

[0031] Furthermore, the electromagnetic field constraint carrier has a length of L_cav and a width of W_cav. A gap of width W_gap is provided between the high-power load resistor and the electromagnetic field constraint metal carrier for easy assembly.

[0032] The working principle of the high-power microwave millimeter wave load of the present invention is as follows:

[0033] When the signal is injected into the high-power microwave millimeter wave load through the input port, the electromagnetic wave propagates in the quasi-TEM mode on the microstrip transmission line. The traditional method usually connects the microstrip line directly to the terminal 50Ω load resistor. Since there is discontinuity in the propagation between the microstrip line and the terminal resistor (the main reason is that the physical width of the two segments of the line is inconsistent), from the perspective of distributed parameters, part of the energy will be reflected back to the input port at the junction end face of the two. This discontinuity is particularly obvious in the high frequency band, which is also the key reason why the existing high-power load has poor standing wave performance in the high frequency band. The present invention introduces multiple π-type resistor attenuation networks on the propagation path to simultaneously perform multi-stage attenuation on the incident and reflected energy of the input signal. First, the energy intensity reaching the terminal 50Ω load is reduced, and the heat energy converted by microwaves is dispersed and distributed to various parts of the high-power load resistor, reducing the risk of local overheating of a single attenuation unit, enhancing the heat dissipation performance of the load, and thus improving the power capacity of the load; it solves the problem that when the signal of the existing high-power load flows through the load, the excessive concentration of energy through the terminal tantalum nitride resistor film is easy to cause the local temperature of the load to be too high, resulting in damage to the load. Second, the reflected energy is attenuated again, reducing the energy intensity reflected back to the input port, thereby improving the overall standing wave performance of the load. The relationship between the standing wave ratio and power of the load can be simply expressed by formula (3):

[0034] (3)

[0035] in, VSWR represents the load standing wave ratio, is the input power of the high power load input port, The power reflected from the terminal 50Ω resistor is obtained by introducing multiple ideal π-type resistor attenuation networks on the propagation path to attenuate the energy reflected from the terminal 50Ω resistor. When the input power of the port is constant, the power of the input port is VSWR As the reflected power decreases, it decreases. According to formula (3), the introduction of a π-type resistor attenuation network can improve the standing wave ratio of the input port. In addition, Figure 1 It can be seen that inserting a π-type resistor attenuation network between microstrip lines can maintain a stable low standing wave ratio in a wide frequency band. Through relevant simulation software, it can be seen that its standing wave ratio is similar to that of microstrip lines, and the standing wave ratio in the 5-40GHz band is better than 1.10. Therefore, the π-type attenuation network introduced in this patent can be regarded as an ideal circuit.

[0036] Based on the above technical solutions, the present invention has the following advantages:

[0037] 1. Low cost: After introducing multiple π-type resistance attenuation networks, the present invention can be realized by printing a tantalum nitride resistance film on the surface of the dielectric layer substrate without metallizing the side wall of the dielectric substrate, that is, a planar structure is adopted instead of a three-dimensional structure, which significantly reduces the production cost.

[0038] 2. Low standing wave: The present invention introduces a π-type resistor attenuation network, which makes the standing wave ratio of the load significantly better than the existing commercial single-resistance high-power load.

[0039] 3. Wide frequency band: The high-power microwave millimeter wave load of the present invention has a wide operating frequency band, which can cover from DC to 43.5 GHz.

[0040] 4. High power capacity: The high-power microwave millimeter wave load of the present invention utilizes its step-by-step attenuation characteristics of input energy to evenly distribute heat to various parts of the load, thereby improving the overall power capacity of the load.

[0041] The present invention also provides a test circuit design method for a microwave millimeter wave high-power load that introduces a π-type resistor attenuation network, comprising the following steps:

[0042] (1) Select a circuit substrate and calculate the width of a 50Ω microstrip transmission line on the substrate based on transmission line theory;

[0043] (2) Preparation of high-power microwave millimeter-wave loads by introducing a π-type resistor attenuation network;

[0044] a. Calculate the specific resistance values ​​of multiple π-type resistor attenuation networks according to the required step attenuation. Each π-type resistor in the multiple π-type resistor attenuation networks bears the same absolute power to ensure the thermal stability of the high-power load. Simulate and design the high-power load that introduces multiple π-type resistor attenuation networks to obtain its standing wave performance. For example, the characteristic impedance of the microstrip line is 50Ω, and the required attenuation is 0.5dB. Substitute it into formula (1) (2) to calculate the intermediate resistance R 1 About 3Ω, two side resistors R 2 About 1800 ohms; similarly, the middle resistance is calculated at 1dB R 1 About 5.6Ω, two side resistors R 2 About 910Ω.

[0045] b. Optimize the design of key parameters of high-power load according to the simulated standing wave ratio curve, including: the length of each segmented transmission line (such as msL_1, msL_2, msL_3, msL_4, etc., the length of each transmission line cannot be equal to avoid resonance in the wide band), the distance between the transmission line and the gold-plated contact L_side (that is, the length of the side resistor of the π-type attenuation network), and the size of the terminal 50Ω tantalum nitride film resistor L_TaN;

[0046] c. According to the parameters obtained in b, a high-power microwave millimeter-wave load with a π-type resistor attenuation network is prepared;

[0047] (3) Based on the microstrip matching theory, a multi-branch matching microstrip line is designed to optimize the standing wave characteristics of the overall structure of the high-power load;

[0048] (4) According to the multi-branch matching microstrip line obtained in step (3), the 50Ω microstrip transmission line obtained in step (1) is connected to the high-power microwave millimeter wave load center introduced with the π-type resistance attenuation network prepared in step (2).

[0049] The beneficial effects of the present invention are as follows: the π-type resistor attenuation network introduced by the present invention has a simple structure, and several π-type resistor attenuation networks can be combined and used according to the actual required attenuation, which significantly improves the standing wave performance and power capacity of high-power microwave millimeter wave loads. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 It is an ideal microstrip line and a microstrip line with a π-type resistor attenuation network VSWR Simulation comparison;

[0051] Figure 2 It is a high-power load resistor for traditional microstrip transmission lines and multi-branch matching microstrip transmission lines. VSWR Simulation comparison;

[0052] Figure 3 It is a high power load based on the introduction of ceramic substrate and without the introduction of three π-type resistor attenuation networks. VSWR Simulation result diagram;

[0053] Figure 4 This is a schematic diagram of the length of a high-power load structure in which three π-type resistor attenuation networks are introduced in the embodiment.

[0054] Figure 5 It is a schematic diagram of the width of a high-power load structure in which three π-type resistor attenuation networks are introduced in an embodiment;

[0055] Figure 6 is a schematic structural diagram of an electromagnetic field-constrained metal carrier according to an embodiment;

[0056] Figure 7 This is a schematic diagram of a high-power load test circuit structure in an embodiment;

[0057] Figure 8 is a partial schematic diagram of multi-branch matching microstrip lines and gold wire bonding in an embodiment;

[0058] Fig. 9 It is a high-power microwave millimeter wave load based on a ceramic substrate and introduces three π-type resistor attenuation networks. VSWR Comparison chart of simulation and test results;

[0059] Figure numerals: 1 is a dielectric substrate, 2 is a segmented microstrip transmission line, 3 is a π-type resistance attenuation network, 4 is a gold-plated contact, 5 is a tantalum nitride resistance film, 6 is an electromagnetic field constraint carrier, 7 is a gold wire, 8 is a printed circuit board PCB substrate, 9 is a 50Ω impedance transmission line, 10 is a multi-branch matching microstrip line, and 11 is a metal cavity. DETAILED DESCRIPTION

[0060] The present invention is further described in detail below with reference to the accompanying drawings and embodiments.

[0061] Currently, commercial high-power microwave loads have the disadvantages of insufficient operating frequency band and standing wave ratio. Through simulation analysis of commercial high-power microwave loads, it is known that when the electromagnetic wave signal attenuates through the load, part of the energy is directly reflected due to the discontinuity of the terminal resistance, which affects the performance of the load.

[0062] To solve this problem, this embodiment provides a high-power microwave millimeter-wave load that introduces a π-type resistor attenuation network. By introducing three π-type resistor attenuation networks, the incident and reflected energy is attenuated twice back and forth. At the same time, the tantalum nitride resistor film further absorbs energy to reduce the absolute energy of the reflection and reduce the standing wave ratio seen from the port.

[0063] like Figure 4 , Figure 5 and Figure 8As shown, a high-power microwave millimeter wave load that introduces a π-type resistance attenuation network provided in this embodiment includes an electromagnetic field constraint carrier 6 with a groove structure, and a load body adapted to the recessed portion is provided in the electromagnetic field constraint carrier 6, and the load body and the electromagnetic field constraint carrier 6 are bonded together by a gold wire 7. The load body includes a dielectric layer substrate 1, and the dielectric layer substrate 1 is made of ceramic, with a thickness of 0.38 mm and a dielectric constant of 9.9. A gold-plated contact 4, a tantalum nitride resistance film 5, a plurality of π-type resistance attenuation networks 3, and a segmented microstrip transmission line 2 are provided on the dielectric layer substrate 1. The gold-plated contact 4 adopts the same structure as the electromagnetic field constraint carrier 6, and the groove opening directions of the two are consistent. The tantalum nitride resistance film 5 is provided at the bottom of the groove of the gold-plated contact 4, and does not contact the inner side wall of the groove of the gold-plated contact 4. The segmented microstrip transmission line 2 coincides with the midline of the groove width W_sub of the gold-plated contact 4, one end of which is connected to the tantalum nitride resistor film 5, and the other end extends to the top opening of the groove of the gold-plated contact 4, which is a gold-plated segmented microstrip transmission line prepared by gold plating. Three π-type resistance attenuation networks 3 are arranged in sequence along the length direction of the segmented microstrip transmission line 2, and are printed on the dielectric plate substrate 1 by printing; the middle resistor of each π-type resistance attenuation network 3 is connected to the segmented microstrip transmission line 2, and the side resistor is connected to the gold-plated contact 4. All components in the high-power microwave millimeter wave load that introduces the π-type resistance attenuation network adopt surface processing technology, that is, plane structure processing. In order to reduce production costs and improve the yield rate of high-power load preparation.

[0064] In order to verify the effectiveness of the π-type resistor attenuation network in improving the performance of the high-power microwave millimeter-wave load introduced with the π-type resistor attenuation network, this embodiment simulates the high-power microwave millimeter-wave load including the π-type resistor attenuation network 3 and removing the π-type resistor attenuation network 3. VSWR The simulation results are as follows Figure 3 The simulation results show that the π-type resistor attenuation network 3 has the function of attenuating the reflected energy and effectively improves the overall standing wave performance of the high-power microwave millimeter wave load.

[0065] It should be noted that when the high-power microwave millimeter wave load of this embodiment introduces multiple π-type resistor attenuation networks 3, it should be ensured that the absolute power borne by each π-type resistor attenuation network 3 is the same. Taking the input power of 100W as an example, the attenuation distribution from the input port is 0.8dB, 1dB, and 1.2dB in sequence, and the attenuation percentage of each part to the input energy is 17%, 20.4%, and 25.7% respectively. Therefore, the absolute power actually borne by each π-type resistor attenuation network 3 is about 17W, and the energy that finally enters the terminal 50Ω load resistor is 50W, achieving 50% power attenuation of the input energy.

[0066] Based on the high-power microwave millimeter-wave load introduced with the π-type resistor attenuation network, this embodiment designs a test circuit for the high-power microwave millimeter-wave load introduced with the π-type resistor attenuation network for performance verification. Figure 6 As shown in FIG. 1 , the test circuit of the high-power microwave millimeter wave load introduced with the π-type resistor attenuation network includes: a printed circuit board PCB substrate 8, a 50Ω impedance transmission line 9 arranged on the upper surface of the printed circuit board PCB substrate 8, and a metal cavity 11. The printed circuit board PCB substrate 8 uses Rogers4350, which has a thickness of 0.254mm, a metal layer thickness of 40um, and a dielectric constant of 3.66. The end of the 50Ω impedance transmission line 9 close to the metal cavity 11 is connected to a multi-branch matching microstrip line 10 for realizing signal transmission and better matching with the high-power microwave load introduced with the π-type resistor attenuation network. The standing wave performance thereof is compared with that of the traditional microstrip line as shown in FIG. Figure 2 Shown according to Figure 2 It can be seen that the use of multi-branch microstrip lines has a better matching effect and presents a smaller standing wave ratio. The metal cavity 11 plays the role of fixing, protecting and grounding. The overall structure of the high-power microwave load with the introduction of the π-type resistance attenuation network is placed in the metal cavity 11, and the electromagnetic field constraint carrier 6 is bonded to the metal cavity 11 with a high-power conductive adhesive. The high-power microwave load with the introduction of the π-type resistance attenuation network is bonded to the multi-branch matching microstrip line 10 through three gold wires.

[0067] During implementation, the π-type resistor attenuation network 3 is used to perform step-by-step attenuation on the input signal, the tantalum nitride resistor film 5 is used to absorb the attenuated energy, and the opening edge of the electromagnetic field constraint carrier 6 is oriented toward and close to the PCB. The electromagnetic simulation software Ansoft HFSS is used to simulate and optimize the test circuit of the high-power microwave millimeter wave load introducing the π-type resistor attenuation network to obtain the optimal parameter size, as shown in Table 1:

[0068] Table 1 Optimal dimensions of high-power microwave millimeter-wave loads with π-type resistor attenuation networks

[0069] Segmented microstrip transmission line width Ms_W 0.35mm The first microstrip transmission line msL_1 0.50mm The second microstrip transmission line msL_2 0.42mm The third microstrip transmission line msL_3 0.66mm The fourth microstrip transmission line msL_4 0.99mm Microstrip transmission line thickness ms_T 0.005mm π-shaped side resistance length L_side 0.8mm Concave gold-plated contact characteristic width L_pad 4.6mm Concave gold-plated contact characteristic width W_pad 0.2mm Tantalum nitride resistor film width L_TaN 1.8mm Dielectric board substrate length L_sub 4.8mm Dielectric board substrate width W_sub 2.45mm Electromagnetic field confinement carrier length L_cav 6.4mm Electromagnetic field confinement carrier width W_cav 5.8mm The internal groove size L_incav of the electromagnetic field confinement carrier 4.9mm The internal groove size W_incav of the electromagnetic field confinement carrier 2.65mm The gap between the electromagnetic field confinement carrier and the dielectric substrate W_gap 0.1mm Transmission line width W 0.52mm Multi-branch matching narrow section length Tmatch1_L 0.2mm Multi-branch matching narrow segment width Tmatch1_W 0.24mm Multi-branch matching wide section length Tmatch2_L 0.15mm Multi-branch matching wide section width Tmatch2_W 1.4mm Wire diameter 25um

[0070] The above example can achieve high power load resistance in the range of 5-43.5GHz. Fig. 9 It is a high-power microwave millimeter wave load based on a ceramic substrate and introduces a π-type resistor attenuation network. VSWR Test results graph. Fig. 9 It can be seen that the high-power microwave millimeter wave load of this embodiment is within the frequency band of 5-43.5 GHz. VSWRBoth are less than 1.4, which is much better than the existing commercial high-power load. Due to the influence of gold wire bonding in the actual assembly and the working frequency relationship of the TRL calibration component itself, there is a slight gap compared with the ideal structure in the simulation, but it is within the predetermined value range. In addition, according to engineering experience and common sense, it can be obtained that the standing wave performance is usually better when the operating frequency is lower than 5GHz. Therefore, the embodiment of the present invention can achieve a low standing wave ratio (SWR) of high-power load resistance in the DC-43.5GHz frequency band. VSWR ), which is less than 1.4.

[0071] Finally, it is worth noting that in high-power applications, diamond substrates have better heat dissipation characteristics. However, due to the high cost of diamond and the purpose of this embodiment to do a verification test, that is, to evaluate the impact of introducing a π-type resistor attenuation network on the standing wave and the overall standing wave characteristics of the load, a lower-cost ceramic was used as the dielectric substrate for simulation and actual measurement.

Claims

1. A high-power microwave millimeter wave load introducing a π-type resistance attenuation network, comprising an electromagnetic field constraint carrier in a groove structure, a load body adapted to the recessed portion being arranged in the electromagnetic field constraint carrier, the load body and the electromagnetic field constraint carrier being bonded together by gold wire, characterized in that: The load body comprises a dielectric layer substrate, on which a gold-plated contact, a tantalum nitride resistor film, a π-type resistor attenuation network, and a segmented microstrip transmission line are arranged; the gold-plated contact adopts the same structure as the electromagnetic field constraint carrier, and the groove opening directions of the two are consistent; the tantalum nitride resistor film is arranged at the bottom of the groove of the gold-plated contact, and does not contact the inner side wall of the groove of the gold-plated contact; the segmented microstrip transmission line coincides with the midline in the direction of the width W_sub of the groove of the gold-plated contact, one end of which is connected to the tantalum nitride resistor film, and the other end extends to the top opening of the groove of the gold-plated contact; the π-type resistor attenuation network is arranged between the tantalum nitride resistor film and the groove opening of the gold-plated contact, there are multiple π-type resistor attenuation networks, and the multiple π-type resistor attenuation networks are arranged in sequence along the length direction of the segmented microstrip transmission line, the middle resistor of each π-type resistor attenuation network is connected to the segmented microstrip transmission line, and the side resistors are connected to the gold-plated contact, and by introducing multiple π-type resistor attenuation networks on the propagation path, the incident and reflected energy of the input signal are simultaneously attenuated in multiple stages.

2. The high-power microwave millimeter wave load introducing a π-type resistor attenuation network according to claim 1, characterized in that: Densely arranged gold wire connections between gold-plated contacts and electromagnetic field confinement carriers.

3. The high-power microwave millimeter wave load introducing a π-type resistor attenuation network according to claim 1, characterized in that: The square resistance of the π-type resistor and the tantalum nitride resistor film are both 50Ω / □.

4. The high-power microwave millimeter wave load introducing a π-type resistor attenuation network according to claim 1, characterized in that: The dielectric layer substrate is made of diamond.

5. The high-power microwave millimeter wave load introducing a π-type resistor attenuation network according to claim 1, characterized in that: The electromagnetic field confinement carrier is prepared by copper-gold plating.

6. The high-power microwave millimeter wave load introducing a π-type resistor attenuation network according to claim 1, characterized in that: The size of the dielectric layer substrate is slightly smaller than the size of the groove portion of the electromagnetic field confinement carrier.

7. The high-power microwave millimeter wave load introducing a π-type resistor attenuation network according to claim 1, characterized in that: The length of the middle resistor of the π-type resistor attenuation network is equal to the width of the segmented microstrip transmission line, and the width is determined by the theoretical calculation value of the π-type resistor attenuation network and the resistance value formula calculated based on 50Ω square resistance; the side resistor length of the π-type resistor attenuation network is L_side, and the width is determined by the theoretical calculation value of the π-type resistor attenuation network and the resistance value formula calculated based on 50Ω square resistance; the calculation formula of the π-type resistor attenuation network is shown as follows: R2 / / (R2 / / Z0+R1)=Z0 Among them, dB represents decibel value, R1 is the middle resistor of the π-type resistor attenuation network, R2 is the side resistor of the π-type resistor attenuation network, and Z0 is the characteristic impedance of the microstrip line.

8. A high-power microwave millimeter wave load introducing a π-type resistor attenuation network according to any one of claims 1 to 7, characterized in that: A distance is arranged between the load body and the electromagnetic field restraining metal carrier.

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