Integrated circuits and their control methods, radio frequency transceivers and terminals

Abstract

This application provides an integrated circuit and its control method, a radio frequency transceiver, and a terminal, relating to the field of circuit technology. It allows adjustment of the gain of the link containing the amplifier using a first attenuator and a second attenuator. The integrated circuit includes an amplifier circuit. The amplifier circuit includes an input terminal, an output terminal, an amplifier coupled between the input terminal and the output terminal, and a radio frequency signal transmission line coupled to the amplifier. The amplifier circuit amplifies the radio frequency signal coupled at the input terminal and outputs it through the output terminal. The amplifier circuit also includes a first attenuator and a second attenuator. The first attenuator includes multiple first transistors coupled to ground, used to control the number of on / off states of the multiple first transistors under the control of a digital signal. The second attenuator includes a second transistor coupled to ground, used to adjust the attenuation of the radio frequency signal by adjusting the impedance of the second transistor under the control of an analog signal. The multiple first transistors and the second transistor are connected in parallel.

Description

Technical Field

[0001] This application relates to the field of circuit technology, and in particular to an integrated circuit and its control method, a radio frequency transceiver, and a terminal. Background Technology

[0002] In radio frequency communication, the gain of an amplifier can fluctuate due to external factors. Changes in the amplifier's gain will affect the power of the radio frequency signal output from the link where the amplifier is located.

[0003] Therefore, it is often necessary to adjust the magnitude of the radio frequency signal transmitted in the link where the amplifier is located, depending on the actual situation. Summary of the Invention

[0004] To address the aforementioned technical problems, this application provides an integrated circuit and its control method, a radio frequency transceiver, and a terminal, which can adjust the gain of the link where the amplifier is located by adjusting the attenuation of the radio frequency signal using a first attenuator and a second attenuator.

[0005] In a first aspect, this application provides an integrated circuit including an amplifier circuit. The amplifier circuit includes an input terminal, an output terminal, an amplifier coupled between the input terminal and the output terminal, and a radio frequency (RF) signal transmission line coupled to the amplifier. The amplifier circuit amplifies the RF signal coupled at the input terminal and outputs it through the output terminal. The amplifier circuit also includes a first attenuator and a second attenuator jointly used to attenuate the RF signal. The first attenuator includes a plurality of first transistors coupled to ground, used to control the number of on / off states of the plurality of first transistors under the control of a digital signal. The second attenuator includes a second transistor coupled to ground, used to adjust the attenuation of the RF signal by adjusting the impedance of the second transistor under the control of an analog signal. The plurality of first transistors and the second transistor are connected in parallel.

[0006] In this application, taking the change in amplifier gain due to ambient temperature as an example, on the one hand, a first attenuator can be used to achieve a large dynamic range adjustment of the radio frequency signal; on the other hand, a second attenuator, under the control of an analog signal, can reduce the attenuation of the radio frequency signal as the ambient temperature increases, which is the opposite of the amplifier's characteristic of "gain decreasing with increasing temperature." Therefore, based on adjusting the amplifier gain using the first attenuator, the attenuation of the radio frequency signal can also be adjusted using the second attenuator based on the ambient temperature to compensate for the amplifier gain, thereby using the first and second attenuators to jointly adjust the gain of the link where the amplifier is located. Of course, the solution of this application can also be applied to amplifier gain changes caused by other reasons.

[0007] In some possible implementations, regarding the positional relationship between the plurality of first and second transistors and the amplifier, the plurality of first and second transistors may be coupled between the input side of the amplifier and ground. And / or, the plurality of first and second transistors may be coupled between the output side of the amplifier and ground.

[0008] In some possible implementations, the characteristic impedance of the RF signal transmission line can be adjusted to ensure good matching between the amplifier and the first and second attenuators, respectively. Both the input and output sides of the RF signal transmission line are coupled to the first and second attenuators.

[0009] Compared to coupling the first and second attenuators on one side of the RF signal transmission line, this application couples the first and second attenuators on both the input and output sides of the RF signal transmission line, which makes the two sides of the RF signal transmission line more symmetrical, improves the port impedance of the amplifier and the first and second attenuators, and optimizes the scattering parameters (S-parameters).

[0010] In some possible implementations, multiple first transistors are coupled between the input side of the amplifier and ground, and a second transistor is coupled between the output side of the amplifier and ground. Alternatively, multiple first transistors are coupled between the output side of the amplifier and ground, and a second transistor is coupled between the input side of the amplifier and ground.

[0011] In some possible implementations, the integrated circuit also includes a control circuit. The control circuit is coupled to the gates of a plurality of first transistors and is used to input digital signals to the gates of the plurality of first transistors to control the number of times the plurality of first transistors are turned on or off.

[0012] In some possible implementations, the integrated circuit also includes a bias circuit. The bias circuit is coupled to the gate of the second transistor and is used to input an analog signal to the gate of the second transistor. The bias circuit can dynamically input the analog signal to the gate of the second transistor based on external factors, such as changes in ambient temperature, to adjust the impedance of the second transistor, thereby enabling the second attenuator to conduct at different degrees and thus attenuating the radio frequency signal to different degrees.

[0013] In some possible implementations, taking the environment as an example, the ambient temperature is the temperature of the bias circuit. The bias circuit inputs an analog signal to the second transistor based on the ambient temperature, causing the second attenuator, under the control of the analog signal, to reduce the attenuation of the RF signal as the ambient temperature increases. The bias circuit can input a dynamic analog signal to the gate of the second transistor in real time based on its own real-time temperature. Under the control of the analog signal, the impedance of the second transistor can change with the analog signal, thus changing the conduction level of the second transistor. This causes the attenuation of the RF signal to decrease as the ambient temperature increases and increase as the ambient temperature decreases, compensating for changes in amplifier gain caused by changes in ambient temperature.

[0014] In some possible implementations, taking the external factor as an example, the integrated circuit also includes a temperature detection circuit coupled to a bias circuit. The temperature detection circuit detects the ambient temperature and sends this information to the bias circuit. The bias circuit sends an analog signal to the gate of the second transistor based on the received ambient temperature information. Under the control of the analog signal, the impedance of the second transistor can change accordingly, thus changing the conduction level of the second transistor. This causes the attenuation of the radio frequency signal to decrease as the ambient temperature increases and increase as the ambient temperature decreases, compensating for changes in amplifier gain caused by changes in ambient temperature.

[0015] In this implementation, in one possible scenario, the temperature detection circuit can send real-time ambient temperature information to the bias circuit. After receiving the real-time ambient temperature information, the bias circuit can input a real-time analog signal to the second attenuator to control the second attenuator to adjust the attenuation of the radio frequency signal in real time according to the ambient temperature. In another possible scenario, the temperature detection circuit can also send ambient temperature information to the bias circuit once at regular time intervals. After receiving the ambient temperature information at regular time intervals, the bias circuit can input an analog signal to the second attenuator to control the second attenuator to adjust the attenuation of the radio frequency signal according to the ambient temperature within a certain period.

[0016] In some possible implementations, the first attenuator is a digital step attenuator, and the second attenuator is a voltage-variable attenuator. The multiple first and second transistors can be either N-type or P-type transistors.

[0017] Taking an example where multiple first transistors are all N-type transistors, if the control circuit inputs a high level (e.g., "1") to the gate of at least some of the first transistors, then at least some of the first transistors will conduct. During the transmission of the radio frequency (RF) signal in the amplifier circuit, a portion of the RF signal can be released to ground through the conducting at least some of the first transistors. That is, the conducting at least some of the first transistors attenuate the magnitude of the RF signal by dividing the voltage. Conversely, if the control circuit inputs a low level (e.g., "0") to the gate of at least some of the first transistors, then at least some of the first transistors will turn off, and the disconnected at least some of the first transistors cannot attenuate the magnitude of the RF signal.

[0018] Taking a scenario where multiple first transistors are all P-type transistors as an example, if the control circuit inputs a low level (e.g., "0") to the gate of at least some of the first transistors, then at least some of the first transistors will conduct. During the transmission of the radio frequency (RF) signal in the amplifier circuit, a portion of the RF signal can be released to ground through the conducting at least some of the first transistors. That is, the conducting at least some of the first transistors attenuate the magnitude of the RF signal by dividing the voltage. Conversely, if the control circuit inputs a high level (e.g., "1") to the gate of at least some of the first transistors, then at least some of the first transistors will turn off, and the disconnected at least some of the first transistors cannot attenuate the magnitude of the RF signal.

[0019] Taking an N-type transistor as an example, the smaller the analog signal input from the bias circuit to the gate of the second transistor, the greater the impedance of the second transistor, and the less completely it conducts. The less of the RF signal is released to ground through the second transistor, the smaller the attenuation of the RF signal by the second attenuator, and the greater the gain of the amplifier link. Conversely, the larger the analog signal input from the bias circuit to the gate of the second transistor, the smaller the impedance of the second transistor, and the more completely it conducts. The more of the RF signal is released to ground through the second transistor, the greater the attenuation of the RF signal by the second attenuator, and the smaller the gain of the amplifier link.

[0020] Taking a P-type transistor as an example, the larger the analog signal input from the bias circuit to the gate of the second transistor, the higher the impedance of the second transistor, and the less completely it conducts. The less of the RF signal is released to ground through the second transistor, the smaller the attenuation of the RF signal by the second attenuator, and the higher the gain of the amplifier link. Conversely, the smaller the analog signal input from the bias circuit to the gate of the second transistor, the lower the impedance of the second transistor, and the more completely it conducts. The more of the RF signal is released to ground through the second transistor, the greater the attenuation of the RF signal by the second attenuator, and the lower the gain of the amplifier link.

[0021] In some possible implementations, the active layers of the multiple first transistors can have different dimensions, so that different degrees of attenuation can be achieved by controlling the number of on / off states of the multiple first transistors of different sizes. If the number of second transistors is only one, the layout area of ​​the integrated circuit can also be saved.

[0022] In a second aspect, a radio frequency transceiver is provided, comprising a transmitter and a receiver; both the transmitter and the receiver include the integrated circuit described in the first aspect.

[0023] The implementation method of the second aspect corresponds to any implementation method of the first aspect. The technical effects corresponding to the implementation method of the second aspect can be found in the first aspect and the technical effects corresponding to any implementation method of the first aspect mentioned above, and will not be repeated here.

[0024] Thirdly, a terminal is provided, comprising an antenna and the radio frequency transceiver described in the second aspect, wherein the antenna is coupled to a transmitter and a receiver of the radio frequency transceiver. The antenna is used to transmit radio frequency signals to the receiver and to receive radio frequency signals transmitted by the transmitter.

[0025] The implementation method of the third aspect corresponds to any implementation method of the first aspect. The technical effects corresponding to the implementation method of the third aspect can be found in the first aspect and the technical effects corresponding to any implementation method of the first aspect mentioned above, and will not be repeated here.

[0026] Fourthly, a control method for an integrated circuit is provided. The integrated circuit includes an amplifier circuit; the amplifier circuit includes an input terminal, an output terminal, a first attenuator, a second attenuator, an amplifier coupled between the input terminal and the output terminal, and a radio frequency (RF) signal transmission line. The RF signal transmission line is coupled to the amplifier; the first attenuator includes a plurality of first transistors, the second attenuator includes a second transistor, and the plurality of first transistors and the second transistor are connected in parallel. The control method for the integrated circuit includes: amplifying the RF signal coupled at the input terminal using the amplifier circuit and outputting it through the output terminal; adjusting the attenuation of the RF signal by controlling the number of on / off states of the plurality of first transistors under the control of a digital signal; and adjusting the attenuation of the RF signal by adjusting the impedance of the second transistor under the control of an analog signal.

[0027] In this application, taking the change in amplifier gain due to ambient temperature as an example, on the one hand, a first attenuator can be used to achieve a large dynamic range adjustment of the radio frequency signal; on the other hand, a second attenuator, under the control of an analog signal, can reduce the attenuation of the radio frequency signal as the ambient temperature increases, contrary to the characteristic of the amplifier that "gain decreases with increasing temperature". Therefore, based on adjusting the amplifier gain using the first attenuator, the attenuation of the radio frequency signal can also be adjusted using the second attenuator based on the ambient temperature to compensate for the amplifier gain, thereby using the first and second attenuators to jointly adjust the gain of the link where the amplifier is located. Of course, the solution of this application can also be applied to changes in amplifier gain caused by other reasons.

[0028] In some possible implementations, the integrated circuit also includes a control circuit. The control circuit is coupled to the gates of a plurality of first transistors; under the control of a digital signal, the attenuation of the radio frequency signal is adjusted by controlling the number of times the plurality of first transistors are turned on and off, including: using the control circuit to input a digital signal to the gates of the plurality of first transistors, and under the control of the digital signal, adjusting the attenuation of the radio frequency signal by controlling the number of times the plurality of first transistors are turned on and off.

[0029] In some possible implementations, the integrated circuit also includes a bias circuit; the bias circuit is coupled to the gate of the second transistor. Under the control of an analog signal, the attenuation of the radio frequency (RF) signal is adjusted by regulating the impedance of the second transistor, including: inputting an analog signal to the gate of the second transistor using the bias circuit, and adjusting the attenuation of the RF signal by regulating the impedance of the second transistor under the control of the analog signal. The bias circuit can dynamically input an analog signal to the gate of the second transistor based on external factors, such as changes in ambient temperature, to adjust the impedance of the second transistor, enabling the second attenuator to achieve different degrees of conduction, thereby attenuating the RF signal to different degrees.

[0030] In some possible implementations, taking the environment as an example, the ambient temperature is the temperature of the bias circuit. Based on the ambient temperature, an analog signal is input to the second transistor using the bias circuit. This includes: the bias circuit inputting an analog signal to the gate of the second transistor according to the ambient temperature, so that the second attenuator, under the control of the analog signal, causes the attenuation of the RF signal to decrease as the ambient temperature increases. The bias circuit can input a dynamic analog signal to the gate of the second transistor in real time according to its own real-time temperature. Under the control of the analog signal, the impedance of the second transistor can change with the analog signal, thereby changing the conduction level of the second transistor. This causes the attenuation of the RF signal to decrease as the ambient temperature increases and increase as the ambient temperature decreases, thus compensating for changes in amplifier gain caused by changes in ambient temperature.

[0031] In some possible implementations, taking the external factor as an example, the integrated circuit also includes a temperature detection circuit coupled to a bias circuit. Based on the ambient temperature, an analog signal is input to the second transistor via the bias circuit. This includes: detecting the ambient temperature using the temperature detection circuit and sending the ambient temperature information to the bias circuit; and inputting an analog signal to the gate of the second transistor based on the received ambient temperature information. Under the control of the analog signal, the impedance of the second transistor can change with the analog signal, thereby changing the conduction level of the second transistor. This causes the attenuation of the radio frequency signal to decrease as the ambient temperature increases and increase as the ambient temperature decreases, compensating for changes in amplifier gain caused by changes in ambient temperature.

[0032] In this implementation, in one possible scenario, the temperature detection circuit can send real-time ambient temperature information to the bias circuit. After receiving the real-time ambient temperature information, the bias circuit can input a real-time analog signal to the second attenuator to control the second attenuator to adjust the attenuation of the radio frequency signal in real time according to the ambient temperature. In another possible scenario, the temperature detection circuit can also send ambient temperature information to the bias circuit once at regular time intervals. After receiving the ambient temperature information at regular time intervals, the bias circuit can input an analog signal to the second attenuator to control the second attenuator to adjust the attenuation of the radio frequency signal according to the ambient temperature within a certain period.

[0033] In some possible implementations, the first attenuator is a digital step attenuator, and the second attenuator is a voltage-variable attenuator. The multiple first and second transistors can be either N-type or P-type transistors.

[0034] The working principle of multiple first transistors and second transistors can be found in the first aspect above, and will not be repeated here. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of an application scenario for a mobile phone provided in an embodiment of this application;

[0036] Figure 2a A circuit diagram of an integrated circuit provided in an embodiment of this application;

[0037] Figure 2b A circuit diagram of another integrated circuit provided in an embodiment of this application;

[0038] Figure 3a A circuit diagram of yet another integrated circuit provided in an embodiment of this application;

[0039] Figure 3b A circuit diagram of yet another integrated circuit provided in an embodiment of this application;

[0040] Figure 4 A circuit diagram of yet another integrated circuit provided in an embodiment of this application;

[0041] Figure 5 A circuit diagram of yet another integrated circuit provided in an embodiment of this application;

[0042] Figure 6 A circuit diagram of yet another integrated circuit provided in an embodiment of this application;

[0043] Figure 7a A graph showing the relationship between the gate voltage of a second attenuator and the amplifier gain is provided in an embodiment of this application.

[0044] Figure 7b Another diagram showing the relationship between the gate voltage of a second attenuator and the amplifier gain provided in this application embodiment;

[0045] Figure 8a A graph showing the relationship between the gate voltage and ambient temperature of a second attenuator provided in an embodiment of this application;

[0046] Figure 8b A graph showing the relationship between the gate voltage and ambient temperature of another second attenuator provided in an embodiment of this application;

[0047] Figure 9a A circuit diagram of yet another integrated circuit provided in an embodiment of this application;

[0048] Figure 9b A circuit diagram of yet another integrated circuit provided in an embodiment of this application;

[0049] Figure 10a This is a schematic diagram of the structure of a radio frequency signal transmission line provided in an embodiment of this application;

[0050] Figure 10b A circuit diagram of a radio frequency signal transmission line provided in an embodiment of this application;

[0051] Figure 11 A diagram showing the connection relationship between the first and second attenuators and the radio frequency signal transmission line, provided for related technologies.

[0052] Figure 12 The control flowchart of the integrated circuit provided in the embodiments of this application.

[0053] Figure label:

[0054] 11-First attenuator; 12-Second attenuator; 13-Amplifier; 14-Bias circuit; 15-Temperature detection circuit; 16-Control circuit; 17-RF signal transmission line; 21-Trace layer; 22-Insulation layer; 23-Ground layer; 101-Receiver; 102-Transmitter; 103-Antenna. Detailed Implementation

[0055] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0056] In this article, the term "and / or" is merely a description of the relationship between related objects, indicating that there can be three relationships. For example, A and / or B can represent three situations: A exists alone, A and B exist simultaneously, and B exists alone.

[0057] The terms "first" and "second," etc., used in the specification and claims of this application are used to distinguish different objects, not to describe a specific order of objects. For example, "first target object" and "second target object," etc., are used to distinguish different target objects, not to describe a specific order of target objects.

[0058] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0059] In the description of the embodiments in this application, unless otherwise stated, "multiple" means two or more. For example, multiple processing units means two or more processing units; multiple systems means two or more systems.

[0060] This application provides a terminal, but the terminal can also be a mobile phone, base station, computer, tablet computer, personal digital assistant (PDA), smart wearable device, smart home device, or any other device including an amplifier. This application does not limit the type of device. For ease of explanation, a mobile phone is used as an example below.

[0061] Figure 1This illustration shows an application scenario diagram of a mobile phone provided in an embodiment of this application. The mobile phone may include a radio frequency transceiver and an antenna 103. The radio frequency transceiver may include a receiver 101 and a transmitter 102. The antenna 103 is coupled to both the receiver 101 and the transmitter 102, and is used to transmit radio frequency signals to the receiver 101 and receive radio frequency signals transmitted by the transmitter 102.

[0062] To meet different application requirements, receiver 101 can amplify the radio frequency (RF) signal received from antenna 103; the signal transmitted by transmitter 102 to antenna 103 can also be an amplified RF signal. This amplification can be achieved using amplifiers. That is, both receiver 101 and transmitter 102 can include amplifiers. For example, receiver 101 can include a low-noise amplifier (LNA), and transmitter 102 can include a power amplifier (PA).

[0063] Of course, receiver 101 and transmitter 102 may also include other amplifiers.

[0064] In some application scenarios, user A calls user B's phone B using phone A. During this call, the radio frequency (RF) signal emitted by phone A needs to reach a certain strength to be transmitted to the base station. Therefore, phone A needs to amplify the RF signal before transmitting it. However, the distance between user A and the base station is not constant; as the distance changes, the strength of the RF signal received by the base station from phone A also changes. Similarly, as the distance between user A and the base station changes, the strength of the RF signal received by phone A from the base station also changes.

[0065] The above example illustrates an application scenario where the radio frequency signal strength needs to be adjusted. Of course, there may also be scenarios where the radio frequency signal needs to be adjusted in other application scenarios, or when the terminal is other electronic devices. This application embodiment does not limit this.

[0066] Based on the above, in order for mobile phone A to send a stable radio frequency (RF) signal to the base station, transmitter 102 may also include an attenuator. The attenuator is used to adjust the attenuation of the RF signal transmitted by transmitter 102, thereby adjusting the gain of the link where the amplifier is located (i.e., the transmitter). Similarly, in order for mobile phone A to receive a stable RF signal sent by the base station, receiver 101 may also include a first attenuator 11. The first attenuator 11 is used to adjust the attenuation of the RF signal transmitted by receiver 101, thereby adjusting the gain of the link where the amplifier is located (i.e., the receiver). Of course, the first attenuator 11 can also be used to achieve other functions, such as adjusting the RF signal over a large dynamic range to meet different application scenarios.

[0067] As mentioned in the background section, amplifier gain fluctuates due to external factors, and this change in gain affects the power of the RF signal output from the link containing the amplifier. For example, amplifiers exhibit gain temperature drift, meaning their gain is temperature-dependent. Higher temperatures result in lower amplifier gain, which in turn reduces the gain of the link containing the amplifier (e.g., receiver and transmitter). Conversely, lower temperatures result in higher amplifier gain, which in turn increases the gain of the link containing the amplifier (e.g., receiver and transmitter).

[0068] Of course, there may be other reasons for gain fluctuations in the amplifier, and this application does not limit them.

[0069] Based on this, embodiments of this application provide an integrated circuit that integrates a first attenuator 11 and a second attenuator 12 in the amplifier's link. Gain fluctuations in the amplifier caused by external factors can be compensated for using the second attenuator 12. Furthermore, the first attenuator 11 and the second attenuator 12 are used together to adjust the attenuation of the radio frequency signal, thereby adjusting the gain of the amplifier's link.

[0070] Those skilled in the art should understand that, in this application, the amplifier gain refers to the ratio X1 between the RF signal output from the amplifier and the RF signal input to the amplifier. The amplifier gain Y1 can also be expressed as Y1 = 20lgX1. For example, if the ratio between the RF signal output from the amplifier and the RF signal input to the amplifier is 11.22, the amplifier gain can be expressed as 11.22 or 21dB. In this application, the gain of the link where the amplifier is located refers to the ratio X2 between the RF signal output from the link where the amplifier is located and the RF signal input to the link where the amplifier is located. The gain Y2 of the link where the amplifier is located can also be expressed as Y2 = 20lgX2. For example, if the ratio between the RF signal output from the link where the amplifier is located and the RF signal input to the link where the amplifier is located is 3.16, the gain of the link where the amplifier is located can be expressed as 3.16 or 10dB.

[0071] The following section will introduce the specific circuit diagram of the integrated circuit using receiver 101 and transmitter 102 as examples.

[0072] like Figures 2a-3b As shown, the integrated circuit includes an amplifier circuit. The amplifier circuit includes an input terminal IN, an output terminal OUT, an amplifier 13 coupled between the input terminal IN and the output terminal OUT, and a radio frequency signal transmission line 17 coupled to the amplifier 13. The amplifier circuit amplifies the radio frequency signal coupled at the input terminal IN and outputs it through the output terminal OUT.

[0073] The amplifier circuit also includes the aforementioned first attenuator 11 and second attenuator 12, which together attenuate the radio frequency (RF) signal. The first attenuator 11 includes multiple grounded first transistors, used to adjust the attenuation of the RF signal by controlling the number of on / off states of the multiple first transistors under the control of a digital signal. The second attenuator 12 includes a grounded second transistor, used to adjust the attenuation of the RF signal by adjusting the impedance of the second transistor under the control of an analog signal. The multiple first transistors and the second transistor are connected in parallel.

[0074] When external factors affect the gain of amplifier 13, causing a change in the gain, both the first attenuator 11 and the second attenuator 12 can be activated. By adjusting the magnitude of the digital signal input to the multiple first transistors, the number of on / off states of the multiple first transistors can be controlled, thereby adjusting the magnitude of the radio frequency signal attenuated by the first attenuator 11. For example, if there are five first transistors, under the control of the digital signal, three first transistors can be turned on and two first transistors can be turned off to adjust the magnitude of the radio frequency signal attenuated by the first attenuator 11. Furthermore, by adjusting the magnitude of the analog signal input to the second transistor, the impedance of the second transistor can be adjusted, thereby adjusting the magnitude of the radio frequency signal attenuated by the second attenuator 12. This allows the gain of the link containing amplifier 13 to be adjusted using both the first attenuator 11 and the second attenuator 12.

[0075] Specifically, taking the change in amplifier 13 gain due to ambient temperature as an example, on the one hand, the first attenuator 11 can be used to adjust the radio frequency signal over a large dynamic range; on the other hand, the second attenuator 12, under the control of an analog signal, can reduce the attenuation of the radio frequency signal as the ambient temperature increases, which is the opposite of the characteristic of amplifier 13 that "the gain decreases as the temperature rises." Therefore, based on adjusting the gain of amplifier 13 using the first attenuator 11, the attenuation of the radio frequency signal can also be adjusted using the second attenuator 12 based on the ambient temperature to compensate for the gain of amplifier 13, thereby using the first attenuator 11 and the second attenuator 12 to jointly adjust the gain of the link where amplifier 13 is located.

[0076] Of course, the solution of this application can also be applied if the gain of amplifier 13 changes due to other reasons, which will not be elaborated here.

[0077] In some possible implementations, the present application embodiments do not limit the positional relationship between the plurality of first transistors and second transistors and amplifier 13. As long as the plurality of first transistors in the first attenuator 11 are connected in parallel with the second transistors in the second attenuator 12, and the plurality of first transistors and second transistors are coupled to the ground terminal, the attenuation of the radio frequency signal can be adjusted by releasing part of the radio frequency signal to the ground terminal.

[0078] Optional, such as Figure 2a As shown, multiple first and second transistors can be coupled between the output side of amplifier 13 and the ground terminal. The radio frequency signal, after being attenuated by the first attenuator 11 and the second attenuator 12, is input to amplifier 13, amplified by amplifier 13, and then output from the output terminal OUT. Alternatively, as... Figure 2b As shown, multiple first transistors and second transistors can be coupled between the input side of amplifier 13 and the ground terminal. After being amplified by amplifier 13, the radio frequency signal is input to the first attenuator 11 and the second attenuator 12, and after passing through the first attenuator 11 and the second attenuator 12, it is output from the output terminal OUT.

[0079] Or, such as Figure 3a As shown, multiple first transistors are coupled between the input side of amplifier 13 and the ground terminal, and second transistors are coupled between the output side of amplifier 13 and the ground terminal. The radio frequency signal is attenuated by the first attenuator 11, input to amplifier 13, amplified by amplifier 13, attenuated by the second attenuator 12, and output from the output terminal OUT. Alternatively, as... Figure 3bAs shown, multiple first transistors are coupled between the output side of amplifier 13 and the ground terminal, and second transistors are coupled between the input side of amplifier 13 and the ground terminal. The radio frequency signal is attenuated by the second attenuator 12, input to amplifier 13, amplified by amplifier 13, attenuated by the first attenuator 11, and output from the output terminal OUT.

[0080] for Figures 2a-3b The coupling relationships between the multiple first transistors, second transistors, and amplifier 13 are shown. For example, referring to Tables 1 and 2, taking the change in amplifier 13 gain due to different ambient temperatures, and the adjustment of the total gain of the link containing amplifier 13 by the first attenuator 11 and the second attenuator 12 at different ambient temperatures as an example, the specific calculation process is as follows:

[0081] Assuming the ambient temperature is normal, the gain Y1 of amplifier 13 is 21dB (X1 = 11.22); assuming the ambient temperature is low, the gain Y1 of amplifier 13 is 22dB (X1 = 12.59), which is 1dB higher than the original 21dB (X1 increases by 1.37); assuming the ambient temperature is high, the gain Y1 of amplifier 13 is 20dB (X1 = 10), which is 1dB lower than the original 21dB (X1 decreases by 1.22).

[0082] As mentioned earlier, based on the location relationship between mobile phone A and the base station, it is assumed that the system requires the amplifier 13 to have a variable gain range of 10dB to 20dB. When mobile phone A is close to the base station, the first attenuator 11 always reduces the gain Y1 of amplifier 13 by 10dB. In other words, the gain Y3 of the first attenuator 11 is -10dB, and the gain X3 of the first attenuator 11 is 0.32. When mobile phone A is far from the base station, the first attenuator 11 always reduces the gain Y1 of amplifier 13 by 0dB. In other words, the gain Y3 of the first attenuator 11 is 0dB, and the gain X3 of the first attenuator 11 is 1. Where Y3 = 20lgX3.

[0083] Regardless of whether mobile phone A is close or very close to the base station, if the ambient temperature is normal, the second attenuator 12 reduces the gain Y1 of amplifier 13 by 1dB. In other words, the gain Y4 of the second attenuator 12 is -1dB, and the gain X4 of the second attenuator 12 is 0.89. If the ambient temperature is low, the second attenuator 12 attenuates the gain of amplifier 13 by 2dB. In other words, the gain Y4 of the second attenuator 12 is -2dB, and the gain X4 of the second attenuator 12 is 0.79. If the ambient temperature is high, the second attenuator 12 reduces or increases the gain X4 of amplifier 13 by 0dB. In other words, the gain Y4 of the second attenuator 12 is 0dB, and the gain X4 of the second attenuator 12 is 1. Where Y4 = 20lgX4.

[0084] In summary, when the distance between mobile phone A and the base station is relatively short, if the ambient temperature is low, the total gain Y2 of the link where amplifier 13 is located is 22dB - 10dB - 2dB = 10dB, and X2 = 12.59 * 0.32 * 0.79 ≈ 3.16; if the ambient temperature is normal, the total gain Y2 of the link where amplifier 13 is located is 21dB - 10dB - 1dB = 10dB, and X2 = 11.22 * 0.32 * 0.89 ≈ 3.16; if the ambient temperature is high, the total gain Y2 of the link where amplifier 13 is located is 20dB - 10dB - 0dB = 10dB, and X2 = 10 * 0.32 * 1 ≈ 3.16. Therefore, based on different ambient temperatures, the first attenuator 11 and the second attenuator 12 can be used to keep the total gain Y2 of the link where amplifier 13 is located consistently at 10dB, and X2 consistently at 3.16.

[0085] When the distance between mobile phone A and the base station is relatively far, if the ambient temperature is low, the total gain Y2 of the link where amplifier 13 is located is 22dB - 0dB - 2dB = 20dB, and X2 = 12.59 * 1 * 0.79 ≈ 10; if the ambient temperature is normal, the total gain Y2 of the link where amplifier 13 is located is 21dB - 0dB - 1dB = 20dB, and X2 = 11.22 * 1 * 0.89 ≈ 10; if the ambient temperature is high, the total gain Y2 of the link where amplifier 13 is located is 20dB - 0dB - 0dB = 20dB, and X2 = 10 * 1 * 1 ≈ 10. Therefore, based on different ambient temperatures, the first attenuator 11 and the second attenuator 12 can be used to keep the total gain Y2 of the link where amplifier 13 is located consistently at 20dB, and X2 consistently at 10.

[0086] Of course, the above calculation data is only an example. Other gain data that are calculated without departing from the above circuit connection method are all within the protection scope of this application.

[0087] Table 1

[0088]

[0089] Table 2

[0090]

[0091] Or, such as Figure 4As shown, the integrated circuit includes two sets of attenuators, each set comprising a first attenuator 11 and a second attenuator 12. Multiple first transistors and second transistors in one set of attenuators are connected in parallel and coupled between the input side of amplifier 13 and ground. Multiple first transistors and second transistors in the other set of attenuators are connected in parallel and coupled between the output side of amplifier 13 and ground. The radio frequency signal is attenuated by the first attenuator 11 and the second attenuator 12 in one set, then input to amplifier 13. After being amplified by amplifier 13, it is attenuated again by the first attenuator 11 and the second attenuator 12 in the other set and output from the output terminal OUT.

[0092] for Figure 4 The coupling relationships between the multiple first transistors, second transistors, and amplifier 13 are shown. For example, referring to Tables 3 and 4, taking the case where the gain of amplifier 13 changes due to different ambient temperatures, and the first attenuator 11 and second attenuator 12 adjust the total gain of the link containing amplifier 13 under different ambient temperatures, the specific calculation process is as follows:

[0093] Assuming the ambient temperature is normal, the gain Y1 of amplifier 13 is 21dB (X1 = 11.22); assuming the ambient temperature is low, the gain Y1 of amplifier 13 is 22dB (X1 = 12.59), which is 1dB higher than the original 21dB (X1 increases by 1.37); assuming the ambient temperature is high, the gain Y1 of amplifier 13 is 20dB (X1 = 10), which is 1dB lower than the original 21dB (X1 decreases by 1.22).

[0094] As mentioned earlier, based on the location relationship between mobile phone A and the base station, it is assumed that the system requires the amplifier 13 to have a variable gain range of 10dB to 20dB. When mobile phone A is close to the base station, the two first attenuators 11 always reduce the gain Y1 of amplifier 13 by 10dB. In other words, the total gain Y3 of the two first attenuators 11 is -10dB, and the total gain X3 of the two first attenuators 11 is 0.32. When mobile phone A is far from the base station, the two first attenuators 11 always reduce the gain Y1 of amplifier 13 by 0dB. In other words, the total gain Y3 of the two first attenuators 11 is 0dB, and the total gain X3 of the two first attenuators 11 is 1. Where Y3 = 20lgX3.

[0095] Regardless of whether mobile phone A is close or close to the base station, if the ambient temperature is normal, the two second attenuators 12 reduce the gain Y1 of amplifier 13 by 1dB. In other words, the total gain Y4 of the two second attenuators 12 is -1dB, and the total gain X4 of the two second attenuators 12 is 0.89. If the ambient temperature is low, the two second attenuators 12 reduce the gain of amplifier 13 by 2dB. In other words, the total gain Y4 of the two second attenuators 12 is -2dB, and the total gain X4 of the two second attenuators 12 is 0.79. If the ambient temperature is high, the two second attenuators 12 reduce or increase the gain X4 of amplifier 13 by 0dB. In other words, the total gain Y4 of the two second attenuators 12 is 0dB, and the total gain X4 of the two second attenuators 12 is 1. Where Y4 = 20lgX4.

[0096] In summary, when the distance between mobile phone A and the base station is relatively short, if the ambient temperature is low, the total gain Y2 of the link where amplifier 13 is located is 22dB - 10dB - 2dB = 10dB, and X2 = 12.59 * 0.32 * 0.79 ≈ 3.16; if the ambient temperature is normal, the total gain Y2 of the link where amplifier 13 is located is 21dB - 10dB - 1dB = 10dB, and X2 = 11.22 * 0.32 * 0.89 ≈ 3.16; if the ambient temperature is high, the total gain Y2 of the link where amplifier 13 is located is 20dB - 10dB - 0dB = 10dB, and X2 = 10 * 0.32 * 1 ≈ 3.16. Therefore, based on different ambient temperatures, the total gain Y2 of the link where amplifier 13 is located can be maintained at 10dB and X2 at 3.16 by using two first attenuators 11 and two second attenuators 12.

[0097] When the distance between mobile phone A and the base station is relatively far, if the ambient temperature is low, the total gain Y2 of the link where amplifier 13 is located is 22dB - 0dB - 2dB = 20dB, and X2 = 12.59 * 1 * 0.79 ≈ 10; if the ambient temperature is normal, the total gain Y2 of the link where amplifier 13 is located is 21dB - 0dB - 1dB = 20dB, and X2 = 11.22 * 1 * 0.89 ≈ 10; if the ambient temperature is high, the total gain Y2 of the link where amplifier 13 is located is 20dB - 0dB - 0dB = 20dB, and X2 = 10 * 1 * 1 ≈ 10. Therefore, based on different ambient temperatures, the total gain Y2 of the link where amplifier 13 is located can be maintained at 20dB and X2 at 10 by using two first attenuators 11 and two second attenuators 12.

[0098] Of course, the above calculation data is only an example. Other gain data that are calculated without departing from the above circuit connection method are all within the protection scope of this application.

[0099] Table 3

[0100]

[0101] Table 4

[0102]

[0103] In some possible ways of implementation, such as Figures 2a-3b As shown, this application does not limit the specific type and structure of the first attenuator 11 and the second attenuator 12. As long as the first attenuator 11 can achieve a large dynamic range adjustment of the radio frequency signal, the attenuation of the radio frequency signal by the second attenuator 12 can be dynamically adjusted according to external factors (e.g., ambient temperature).

[0104] Optionally, the first attenuator 11 can be a digital step attenuator (DSA), and the second attenuator 12 can be a voltage variable attenuator (VVA). Furthermore, the plurality of first transistors in the digital step attenuator and the second transistors in the voltage variable attenuator can be N-type transistors or P-type transistors. All of the plurality of first transistors can be either N-type or P-type transistors, or the plurality of first transistors can include both N-type and P-type transistors. The number of second transistors can be one or more. When there are multiple second transistors, all of the multiple second transistors can be either N-type or P-type transistors, or the multiple second transistors can include both N-type and P-type transistors.

[0105] In some embodiments, such as Figure 5 and Figure 6 As shown, the integrated circuit may further include a bias circuit 14, which is coupled to the gate of the second transistor. The bias circuit 14 can dynamically input an analog signal to the gate of the second transistor based on external factors, such as changes in ambient temperature, to adjust the impedance of the second transistor, thereby enabling the second attenuator 12 to conduct at different degrees and thus attenuating the radio frequency signal to different degrees. Furthermore, the first terminal of the second transistor is coupled to the input or output side of the amplifier 13, and the second terminal of the second transistor is coupled to ground. The first terminal of the second transistor can be the source, and the second terminal can be the drain. Alternatively, the first terminal of the second transistor can be the drain, and the second terminal can be the source.

[0106] It should be noted that the foregoing examples illustrate the case where there are one or two second attenuators 12. In this embodiment, the number of second attenuators 12 can be one or more. When there are multiple second attenuators 12, multiple second attenuators 12 can be controlled by the same bias circuit 14, or the bias circuit 14 can be paired one-to-one with multiple second attenuators 12, with each bias circuit 14 controlling its corresponding second attenuator 12. Furthermore, when the same bias circuit 14 controls multiple second attenuators 12, the analog signal values ​​input by the same bias circuit 14 to the second transistors of the multiple second attenuators 12 can be the same or different.

[0107] The number of second transistors in each second attenuator 12 can be one or more. When a second attenuator 12 includes multiple second transistors, the same bias circuit 14 can control all the second transistors in one second attenuator 12; alternatively, the bias circuit 14 can correspond one-to-one with the multiple second transistors, with each bias circuit 14 controlling its corresponding second transistor. Furthermore, when the same bias circuit 14 controls multiple second transistors, the analog signal values ​​input by the same bias circuit 14 to the multiple second transistors can be the same or different.

[0108] The analog signal input to the gate of the second transistor by the bias circuit 14 can be either a voltage signal or a current signal. For ease of explanation, the following description will use the example of the analog signal input to the gate of the second transistor by the bias circuit 14 being a voltage signal.

[0109] The following example illustrates how the bias circuit 14 controls the second attenuator 12 based on the ambient temperature, using the change in gain of amplifier 13 caused by ambient temperature as an example.

[0110] One possible way to achieve this is, such as Figure 5 As shown, the analog signal input to the gate of the second transistor by the bias circuit 14 can change with its own temperature. In this case, the ambient temperature can be the temperature of the bias circuit 14. In this way, the bias circuit 14 can input a dynamic analog signal to the gate of the second transistor in real time according to its own real-time temperature. Under the control of the analog signal, the impedance of the second transistor can change with the analog signal, thereby changing the conduction level of the second transistor. This causes the attenuation of the RF signal to decrease as the ambient temperature increases and increase as the ambient temperature decreases, thus compensating for the change in gain of the amplifier 13 due to changes in ambient temperature.

[0111] Another possible way to achieve this is, such as Figure 6As shown, the integrated circuit may further include a temperature detection circuit 15, which is coupled to a bias circuit 14. The temperature detection circuit 15 detects the ambient temperature and sends this information to the bias circuit 14. The bias circuit 14 sends an analog signal to the gate of the second transistor based on the received ambient temperature information. Under the control of the analog signal, the impedance of the second transistor can change accordingly, thereby changing the conduction level of the second transistor. This causes the attenuation of the radio frequency signal to decrease as the ambient temperature increases and increase as the ambient temperature decreases, thus compensating for the change in gain of the amplifier 13 due to changes in ambient temperature.

[0112] In this implementation, in one possible scenario, the temperature detection circuit 15 can send real-time ambient temperature information to the bias circuit 14. After receiving the real-time ambient temperature information, the bias circuit 14 can input a real-time analog signal to the second attenuator 12 to control the second attenuator 12 to adjust the attenuation of the radio frequency signal in real time according to the ambient temperature. In another possible scenario, the temperature detection circuit 15 can also send ambient temperature information to the bias circuit 14 once at regular intervals. After receiving the ambient temperature information at regular intervals, the bias circuit 14 can input an analog signal to the second attenuator 12 to control the second attenuator 12 to adjust the attenuation of the radio frequency signal according to the ambient temperature within a certain period.

[0113] It should be noted that the embodiments of this application do not limit the specific duration of a certain time period. For example, a certain time period can be 20ms or 1s. Furthermore, the ambient temperature measured by the temperature detection circuit 15 can be the ambient temperature around the temperature detection circuit 15 or the ambient temperature around the amplifier 13.

[0114] Considering that if the entire integrated circuit is integrated onto a single chip, the size of the entire integrated circuit is very small, and the ambient temperature around any device within the integrated circuit is close to the ambient temperature around other devices within the integrated circuit. Therefore, regardless of whether the ambient temperature represents the temperature of the bias circuit 14 itself, the ambient temperature around the temperature detection circuit 15, or the temperature of other devices within the integrated circuit, it is the same as the ambient temperature around the amplifier 13.

[0115] Of course, other methods can also be used to make the bias circuit 14 input an analog signal to the gate of the second transistor according to the ambient temperature, so that the attenuation of the radio frequency signal by the second transistor decreases as the ambient temperature increases under the control of the analog signal.

[0116] In some embodiments, such as Figure 5 and Figure 6As shown, the integrated circuit may further include a control circuit 16, which can be coupled to the gates of the plurality of first transistors for inputting digital signals to the gates of the plurality of first transistors to control the number of times the plurality of first transistors are turned on or off. Furthermore, the first terminals of the plurality of first transistors are coupled to the input or output side of the amplifier 13, and the second terminals of the plurality of first transistors are coupled to ground. The first terminals of the plurality of first transistors can be sources, and the second terminals of the plurality of first transistors can be drains. Alternatively, the first terminals of the plurality of first transistors can be drains, and the second terminals of the plurality of first transistors can be sources.

[0117] It should be noted that there can be one or more first attenuators 11, and multiple first transistors in at least one first attenuator 11 can be controlled by the same control circuit 16. Alternatively, each control circuit 16 can correspond one-to-one with a single first transistor, controlling its corresponding first transistor. Furthermore, when the same control circuit 16 controls multiple first transistors, the digital signal values ​​input by the same control circuit 16 to the gates of the multiple first transistors can be the same or different.

[0118] Furthermore, the digital signal input by the control circuit 16 to the gates of the plurality of first transistors can be either a voltage signal or a current signal. For ease of explanation, the following description will use the example of the analog signal input by the control circuit 16 to the gates of the plurality of first transistors being a voltage signal.

[0119] The working principle of the multiple first transistors and second transistors will be explained in detail below in conjunction with the bias circuit 14 and the control circuit 16.

[0120] Taking an example where multiple first transistors are all N-type transistors, if the control circuit 16 inputs a high level (e.g., "1") to the gate of at least some of the first transistors, then at least some of the first transistors will be turned on. During the transmission of the radio frequency signal in the amplifier circuit, part of the radio frequency signal can also be released to ground through the at least some of the turned-on first transistors. That is, the at least some of the turned-on first transistors attenuate the magnitude of the radio frequency signal by dividing the voltage. Conversely, if the control circuit 16 inputs a low level (e.g., "0") to the gate of at least some of the first transistors, then at least some of the first transistors will be turned off, and the at least some of the turned-off first transistors cannot attenuate the magnitude of the radio frequency signal.

[0121] Taking a scenario where multiple first transistors are all P-type transistors as an example, if the control circuit 16 inputs a low level (e.g., "0") to the gate of at least some of the first transistors, then at least some of the first transistors will be turned on. During the transmission of the radio frequency signal in the amplifier circuit, a portion of the radio frequency signal can be released to ground through the turned-on at least some of the first transistors. That is, the turned-on at least some of the first transistors attenuate the magnitude of the radio frequency signal by dividing the voltage. Conversely, if the control circuit 16 inputs a high level (e.g., "1") to the gate of at least some of the first transistors, then at least some of the first transistors will be turned off, and the turned-off at least some of the first transistors cannot attenuate the magnitude of the radio frequency signal.

[0122] Taking an N-type transistor as an example, if the analog signal input from the bias circuit 14 to the gate of the second transistor is smaller, the impedance of the second transistor is larger, and the second transistor is less fully turned on. The less of the RF signal is released to ground through the second transistor, the smaller the attenuation of the RF signal by the second attenuator 12, and the greater the gain of the link containing amplifier 13. Conversely, if the analog signal input from the bias circuit 14 to the gate of the second transistor is larger, the impedance of the second transistor is smaller, and the second transistor is more fully turned on. The more of the RF signal is released to ground through the second transistor, the greater the attenuation of the RF signal by the second attenuator 12, and the smaller the gain of the link containing amplifier 13.

[0123] Taking a P-type transistor as an example, if the analog signal input from the bias circuit 14 to the gate of the second transistor is larger, the impedance of the second transistor is larger, and the second transistor is less fully turned on. The less of the RF signal is released to ground through the second transistor, the smaller the attenuation of the RF signal by the second attenuator 12, and the greater the gain of the link containing amplifier 13. Conversely, if the analog signal input from the bias circuit 14 to the gate of the second transistor is smaller, the impedance of the second transistor is smaller, and the second transistor is more fully turned on. The more of the RF signal is released to ground through the second transistor, the greater the attenuation of the RF signal by the second attenuator 12, and the smaller the gain of the link containing amplifier 13.

[0124] Specifically, the gain G of amplifier 13 is related to the digital signal code input to the multiple first transistors and the analog signal V input to the second transistor, and can be represented by formula 1: G(code,V). Figure 7a As shown, if the second transistor is an N-type transistor, the smaller the analog signal received at the gate of the second transistor, the greater the gain of amplifier 13, which can be expressed by formula 2: To represent. For example... Figure 7b As shown, if the second transistor is a P-type transistor, the larger the analog signal received at the gate of the second transistor, the greater the gain of amplifier 13, which can be expressed by formula 3: To express.

[0125] As the ambient temperature T increases, the attenuation of the radio frequency signal by the second attenuator 12 decreases, thereby increasing the gain of the amplifier 13 as the ambient temperature T increases, as can be expressed by formula 4: To express.

[0126] Furthermore, such as Figure 8a and Figure 8b As shown, the relationship curve between the analog signal V and the ambient temperature T can be set.

[0127] like Figure 8a As shown, taking an N-type transistor as an example, the higher the ambient temperature T, the smaller the analog signal V received by the gate of the second transistor, and the smaller the attenuation of the radio frequency signal by the second transistor. This can be expressed by formula 5: V = a - bT, (b > 0). Where a and b are constants.

[0128] like Figure 8b As shown, taking a P-type transistor as an example, the higher the ambient temperature T, the larger the analog signal V received by the gate of the second transistor, and the smaller the attenuation of the radio frequency signal by the second transistor. This can be expressed by formula 6: V = a + bT, (b > 0). Where a and b are constants.

[0129] In this way, if the second transistor is an N-type transistor, the relationship between the ambient temperature T, the analog signal input to the gate of the second transistor, and the attenuation of the radio frequency signal by the second transistor can be determined based on the parameters of the second transistor according to Formulas 1, 2, 4, and 5, thereby adjusting the gain of the link where amplifier 13 is located according to the ambient temperature T.

[0130] For example, Formula 5 can be expressed as V = 1.44 - 0.012T. When the ambient temperature is -30℃, the analog signal input to the gate of the second transistor from the bias circuit 14 can be 1.8V; when the ambient temperature is 120℃, the analog signal input to the gate of the second transistor from the bias circuit 14 can be 0V. By adjusting the size of the second transistor, the gain of the second attenuator 12 is 0dB when V = 0V, and -2dB when V = 1.8V. In this way, the temperature drift compensation range of the second attenuator 12 is 2dB, which precisely compensates for the temperature drift of the amplifier 13, keeping the total gain of the link containing the amplifier 13 unchanged with temperature.

[0131] If the second transistor is a P-type transistor, the relationship between the ambient temperature T, the analog signal input to the gate of the second transistor, and the attenuation of the radio frequency signal by the second transistor can be determined based on the parameters of the second transistor according to formulas 1, 3, 4, and 6. Thus, the gain of the link where amplifier 13 is located can be adjusted according to the ambient temperature T.

[0132] For example, Formula 6 can be expressed as V = 0.36 + 0.012T. When the ambient temperature is -30℃, the analog signal input to the gate of the second transistor from the bias circuit 14 can be 0V; when the ambient temperature is 120℃, the analog signal input to the gate of the second transistor from the bias circuit 14 can be 1.8V. By adjusting the size of the second transistor, the gain of the second attenuator 12 is -2dB when V = 0V and 0dB when V = 1.8V. In this way, the temperature drift compensation range of the second attenuator 12 is 2dB, which precisely compensates for the temperature drift of the amplifier 13, keeping the total gain of the link containing the amplifier 13 unchanged with temperature.

[0133] In some possible implementations, the active layers of the multiple first transistors can have different dimensions, so that different degrees of attenuation can be achieved by controlling the number of on / off states of the multiple first transistors of different sizes. If the number of second transistors is only one, the layout area of ​​the integrated circuit can also be saved.

[0134] In addition, as shown in the figure Figure 9a and Figure 9b As shown, in some embodiments, the characteristic impedance of the radio frequency signal transmission line 17 can be adjusted to ensure good matching between the amplifier 13 and the first attenuator 11 and the second attenuator 12. The radio frequency signal transmission line 17 is coupled between the amplifier 13 and the output terminal OUT. The radio frequency signal transmission line 17 can be a microstrip line (…). Figure 10a ), or coplanar waveguide, or capacitor-inductor-capacitor (CLC) lumped transmission line ( Figure 10b ).

[0135] like Figure 10a As shown, the microstrip line includes a trace layer 21, an insulating layer 22, and a ground layer 23 stacked sequentially. Radio frequency signals can be transmitted through the trace layer 21 and return to the ground layer 23. Figure 10b As shown, a CLC lumped transmission line includes an inductor L, a capacitor C coupled between the inductor input side and the ground terminal, and a capacitor C2 coupled between the inductor output side and the ground terminal. Radio frequency signals can be transmitted along the branch containing inductor L and return to ground through capacitor C2.

[0136] In some possible ways of implementation, such as Figure 9a As shown, the radio frequency signal transmission line 17 can be coupled between the output side of amplifier 13 and the output terminal OUT. Alternatively, as... Figure 2b As shown, the radio frequency signal transmission line 17 can be coupled between the input terminal IN and the input side of the amplifier 13.

[0137] In some possible ways of implementation, such as Figure 2a and Figure 2b As shown, the first terminals of multiple first transistors and second transistors can be coupled to the input side of the radio frequency signal transmission line 17. Alternatively, as... Figure 9a As shown, the first terminals of multiple first transistors and second transistors can be coupled to the output side of the radio frequency signal transmission line 17.

[0138] Or, such as Figure 9b As shown, both the input and output sides of the radio frequency signal transmission line 17 are coupled to the first attenuator 11 and the second attenuator 12. Taking an amplifier circuit including two sets of attenuators as an example, the first electrodes of multiple first transistors and second transistors in one set of attenuators are coupled to the input side of the radio frequency signal transmission line 17, and the first electrodes of multiple first transistors and second transistors in the other set of attenuators are coupled to the output side of the radio frequency signal transmission line 17.

[0139] Compared to Figure 9a The first attenuator 11 and the second attenuator 12 are coupled on one side of the radio frequency signal transmission line 17, as shown. Figure 9b The first attenuator 11 and the second attenuator 12 are coupled on both the input and output sides of the RF signal transmission line 17, which makes the two sides of the RF signal transmission line 17 more symmetrical, improves the port impedance of the amplifier 13 coupled with the first attenuator 11 and the second attenuator 12, and optimizes the scattering parameters (S-parameters).

[0140] Furthermore, when both the input and output sides of the radio frequency signal transmission line 17 are coupled with either a first attenuator 11 or a second attenuator 12, Figure 11 Another series configuration is illustrated. Specifically, the link containing amplifier 13 includes a first set of attenuators 111 and a second set of attenuators 121 connected in series. The first set of attenuators 111 includes two first attenuators 11 connected in parallel, with the RF signal transmission line 17 coupled between the two first attenuators 11. The second set of attenuators 121 includes two second attenuators 12 connected in parallel, with the RF signal transmission line 17 coupled between the two second attenuators 12. That is, the two first attenuators 11 and the two second attenuators 12 require two RF signal transmission lines 17. Since the RF signal transmission line 17 occupies a large layout area, if the integrated circuit has multiple first attenuators 11 and second attenuators 12, the layout area occupied by the integrated circuit will increase significantly.

[0141] In contrast, this application Figure 9b In the illustrated scheme, although the link containing amplifier 13 includes an RF signal transmission line 17, the RF signal transmission line 17 is coupled between a group of first and second transistors connected in parallel and another group of first and second transistors connected in parallel, thus achieving a first attenuator 11 and a second attenuator 12 on both sides of the RF signal transmission line 17. Compared to Figure 11The proposed solution allows for optimization of scattering parameters while maintaining the same number of first attenuators 11 and second attenuators 12. This also reduces the number of radio frequency signal transmission lines 17 by half, significantly decreasing the layout area occupied by the radio frequency signal transmission lines 17 and thus reducing the layout area occupied by the integrated circuit.

[0142] This application also provides a control method for an integrated circuit, which can be any of the integrated circuits described in the foregoing embodiments. The integrated circuit includes an amplifier circuit. The amplifier circuit includes an input terminal IN, an output terminal OUT, a first attenuator 11, a second attenuator 12, an amplifier 13 coupled between the input terminal IN and the output terminal OUT, and a radio frequency signal transmission line 17. The radio frequency signal transmission line 17 is coupled to the amplifier 13. The first attenuator 11 includes a plurality of first transistors, and the second attenuator 12 includes a second transistor; the plurality of first transistors and the second transistor are connected in parallel.

[0143] like Figure 12 As shown, the control method for an integrated circuit may include the following steps:

[0144] S110 uses an amplifier circuit to amplify the radio frequency signal coupled at the input terminal IN and output it through the output terminal OUT.

[0145] S120, under the control of digital signals, adjusts the attenuation of radio frequency signals by controlling the number of on / off states of multiple first transistors.

[0146] In some possible implementations, the embodiments of this application do not limit the specific type and structure of the first attenuator 11, as long as the first attenuator 11 can achieve large dynamic range adjustment of the radio frequency signal.

[0147] Optionally, the first attenuator 11 can be a DSA. Furthermore, the plurality of first transistors in the digital step attenuator can be N-type transistors or P-type transistors. All of the plurality of first transistors can be either N-type or P-type transistors, or the plurality of first transistors can include both N-type and P-type transistors.

[0148] In one possible case, such as Figure 5 and Figure 6As shown, the integrated circuit may further include a control circuit 16, which can be coupled to the gates of the plurality of first transistors for inputting digital signals to the gates of the plurality of first transistors to control the number of times the plurality of first transistors are turned on or off. Furthermore, the first terminals of the plurality of first transistors are coupled to the input or output side of the amplifier 13, and the second terminals of the plurality of first transistors are coupled to ground. The first terminals of the plurality of first transistors can be sources, and the second terminals of the plurality of first transistors can be drains. Alternatively, the first terminals of the plurality of first transistors can be drains, and the second terminals of the plurality of first transistors can be sources.

[0149] It should be noted that there can be one or more first attenuators 11, and multiple first transistors in at least one first attenuator 11 can be controlled by the same control circuit 16. Alternatively, each control circuit 16 can correspond one-to-one with a single first transistor, controlling its corresponding first transistor. Furthermore, when the same control circuit 16 controls multiple first transistors, the digital signal values ​​input by the same control circuit 16 to the gates of the multiple first transistors can be the same or different.

[0150] Furthermore, the digital signal input by the control circuit 16 to the gates of the plurality of first transistors can be either a voltage signal or a current signal. For ease of explanation, the following description will use the example of the analog signal input by the control circuit 16 to the gates of the plurality of first transistors being a voltage signal.

[0151] The working principle of the multiple first transistors will be explained in detail below with reference to the control circuit 16.

[0152] Taking an example where multiple first transistors are all N-type transistors, if the control circuit 16 inputs a high level (e.g., "1") to the gate of at least some of the first transistors, then at least some of the first transistors will be turned on. During the transmission of the radio frequency signal in the amplifier circuit, part of the radio frequency signal can also be released to ground through the at least some of the turned-on first transistors. That is, the at least some of the turned-on first transistors attenuate the magnitude of the radio frequency signal by dividing the voltage. Conversely, if the control circuit 16 inputs a low level (e.g., "0") to the gate of at least some of the first transistors, then at least some of the first transistors will be turned off, and the at least some of the turned-off first transistors cannot attenuate the magnitude of the radio frequency signal.

[0153] Taking a scenario where multiple first transistors are all P-type transistors as an example, if the control circuit 16 inputs a low level (e.g., "0") to the gate of at least some of the first transistors, then at least some of the first transistors will be turned on. During the transmission of the radio frequency signal in the amplifier circuit, a portion of the radio frequency signal can be released to ground through the turned-on at least some of the first transistors. That is, the turned-on at least some of the first transistors attenuate the magnitude of the radio frequency signal by dividing the voltage. Conversely, if the control circuit 16 inputs a high level (e.g., "1") to the gate of at least some of the first transistors, then at least some of the first transistors will be turned off, and the turned-off at least some of the first transistors cannot attenuate the magnitude of the radio frequency signal.

[0154] S130, under the control of the analog signal, adjusts the attenuation of the radio frequency signal by adjusting the impedance of the second transistor.

[0155] When external factors affect the gain of amplifier 13, causing a change in the gain, both the first attenuator 11 and the second attenuator 12 can be activated. By adjusting the magnitude of the digital signal input to the multiple first transistors, the number of on / off states of the multiple first transistors can be controlled, thereby adjusting the magnitude of the radio frequency signal attenuated by the first attenuator 11. For example, if there are five first transistors, under the control of the digital signal, three first transistors can be turned on and two first transistors can be turned off to adjust the magnitude of the radio frequency signal attenuated by the first attenuator 11. Furthermore, by adjusting the magnitude of the analog signal input to the second transistor, the impedance of the second transistor can be adjusted, thereby adjusting the magnitude of the radio frequency signal attenuated by the second attenuator 12. This allows the gain of the link containing amplifier 13 to be adjusted using both the first attenuator 11 and the second attenuator 12.

[0156] Specifically, taking the change in amplifier 13 gain due to ambient temperature as an example, on the one hand, the first attenuator 11 can be used to adjust the radio frequency signal over a large dynamic range; on the other hand, the second attenuator 12, under the control of an analog signal, can reduce the attenuation of the radio frequency signal as the ambient temperature increases, which is the opposite of the characteristic of amplifier 13 that "the gain decreases as the temperature rises." Therefore, based on adjusting the gain of amplifier 13 using the first attenuator 11, the attenuation of the radio frequency signal can also be adjusted using the second attenuator 12 based on the ambient temperature to compensate for the gain of amplifier 13, thereby using the first attenuator 11 and the second attenuator 12 to jointly adjust the gain of the link where amplifier 13 is located.

[0157] Of course, the solution of this application can also be applied if the gain of amplifier 13 changes due to other reasons, which will not be elaborated here.

[0158] In some possible implementations, the present application embodiments do not limit the positional relationship between the plurality of first transistors and second transistors and amplifier 13. As long as the plurality of first transistors and second transistors are connected in parallel and the plurality of first transistors and second transistors are coupled to the ground terminal, the attenuation of the radio frequency signal can be adjusted by releasing part of the radio frequency signal to the ground terminal.

[0159] Optional, such as Figure 2a As shown, multiple first and second transistors can be coupled between the output side of amplifier 13 and the ground terminal. The radio frequency signal, after being attenuated by the first attenuator 11 and the second attenuator 12, is input to amplifier 13, amplified by amplifier 13, and then output from the output terminal OUT. Alternatively, as... Figure 2b As shown, multiple first transistors and second transistors can be coupled between the input side of amplifier 13 and the ground terminal. After being amplified by amplifier 13, the radio frequency signal is input to the first attenuator 11 and the second attenuator 12, and after passing through the first attenuator 11 and the second attenuator 12, it is output from the output terminal OUT.

[0160] Or, such as Figure 3a As shown, multiple first transistors are coupled between the input side of amplifier 13 and the ground terminal, and second transistors are coupled between the output side of amplifier 13 and the ground terminal. The radio frequency signal is attenuated by the first attenuator 11, input to amplifier 13, amplified by amplifier 13, attenuated by the second attenuator 12, and output from the output terminal OUT. Alternatively, as... Figure 3b As shown, multiple first transistors are coupled between the output side of amplifier 13 and the ground terminal, and second transistors are coupled between the input side of amplifier 13 and the ground terminal. The radio frequency signal is attenuated by the second attenuator 12, input to amplifier 13, amplified by amplifier 13, attenuated by the first attenuator 11, and output from the output terminal OUT.

[0161] for Figures 2a-3b The coupling relationships between the multiple first transistors, second transistors, and amplifier 13 are shown. For example, referring to Tables 1 and 2, taking the change in amplifier 13 gain due to different ambient temperatures, and the adjustment of the total gain of the link containing amplifier 13 by the first attenuator 11 and the second attenuator 12 at different ambient temperatures as an example, the specific calculation process is as follows:

[0162] Assuming the ambient temperature is normal, the gain Y1 of amplifier 13 is 21dB (X1 = 11.22); assuming the ambient temperature is low, the gain Y1 of amplifier 13 is 22dB (X1 = 12.59), which is 1dB higher than the original 21dB (X1 increases by 1.37); assuming the ambient temperature is high, the gain Y1 of amplifier 13 is 20dB (X1 = 10), which is 1dB lower than the original 21dB (X1 decreases by 1.22).

[0163] As mentioned earlier, based on the location relationship between mobile phone A and the base station, it is assumed that the system requires the amplifier 13 to have a variable gain range of 10dB to 20dB. When mobile phone A is close to the base station, the first attenuator 11 always reduces the gain Y1 of amplifier 13 by 10dB. In other words, the gain Y3 of the first attenuator 11 is -10dB, and the gain X3 of the first attenuator 11 is 0.32. When mobile phone A is far from the base station, the first attenuator 11 always reduces the gain Y1 of amplifier 13 by 0dB. In other words, the gain Y3 of the first attenuator 11 is 0dB, and the gain X3 of the first attenuator 11 is 1. Where Y3 = 20lgX3.

[0164] Regardless of whether mobile phone A is close or very close to the base station, if the ambient temperature is normal, the second attenuator 12 reduces the gain Y1 of amplifier 13 by 1dB. In other words, the gain Y4 of the second attenuator 12 is -1dB, and the gain X4 of the second attenuator 12 is 0.89. If the ambient temperature is low, the second attenuator 12 attenuates the gain of amplifier 13 by 2dB. In other words, the gain Y4 of the second attenuator 12 is -2dB, and the gain X4 of the second attenuator 12 is 0.79. If the ambient temperature is high, the second attenuator 12 reduces or increases the gain X4 of amplifier 13 by 0dB. In other words, the gain Y4 of the second attenuator 12 is 0dB, and the gain X4 of the second attenuator 12 is 1. Where Y4 = 20lgX4.

[0165] In summary, when the distance between mobile phone A and the base station is relatively short, if the ambient temperature is low, the total gain Y2 of the link where amplifier 13 is located is 22dB - 10dB - 2dB = 10dB, and X2 = 12.59 * 0.32 * 0.79 ≈ 3.16; if the ambient temperature is normal, the total gain Y2 of the link where amplifier 13 is located is 21dB - 10dB - 1dB = 10dB, and X2 = 11.22 * 0.32 * 0.89 ≈ 3.16; if the ambient temperature is high, the total gain Y2 of the link where amplifier 13 is located is 20dB - 10dB - 0dB = 10dB, and X2 = 10 * 0.32 * 1 ≈ 3.16. Therefore, based on different ambient temperatures, the first attenuator 11 and the second attenuator 12 can be used to keep the total gain Y2 of the link where amplifier 13 is located consistently at 10dB, and X2 consistently at 3.16.

[0166] When the distance between mobile phone A and the base station is relatively far, if the ambient temperature is low, the total gain Y2 of the link where amplifier 13 is located is 22dB - 0dB - 2dB = 20dB, and X2 = 12.59 * 1 * 0.79 ≈ 10; if the ambient temperature is normal, the total gain Y2 of the link where amplifier 13 is located is 21dB - 0dB - 1dB = 20dB, and X2 = 11.22 * 1 * 0.89 ≈ 10; if the ambient temperature is high, the total gain Y2 of the link where amplifier 13 is located is 20dB - 0dB - 0dB = 20dB, and X2 = 10 * 1 * 1 ≈ 10. Therefore, based on different ambient temperatures, the first attenuator 11 and the second attenuator 12 can be used to keep the total gain Y2 of the link where amplifier 13 is located consistently at 20dB, and X2 consistently at 10.

[0167] Of course, the above calculation data is only an example. Other gain data that are calculated without departing from the above circuit connection method are all within the protection scope of this application.

[0168] Or, such as Figure 4 As shown, the integrated circuit includes two sets of attenuators, each set comprising a first attenuator 11 and a second attenuator 12. Multiple first and second transistors in one set of attenuators are connected in parallel and coupled between the input side of amplifier 13 and ground. Multiple first and second transistors in the other set of attenuators are connected in parallel and coupled between the output side of amplifier 13 and ground. The radio frequency signal is attenuated by the first attenuator 11 and the second attenuator 12 in one set, input to amplifier 13, amplified by amplifier 13, attenuated again by the first attenuator 11 and the second attenuator 12 in the other set, and output from the output terminal OUT.

[0169] for Figure 4The coupling relationships between the multiple first transistors, second transistors, and amplifier 13 are shown. For example, referring to Tables 3 and 4, taking the case where the gain of amplifier 13 changes due to different ambient temperatures, and the first attenuator 11 and second attenuator 12 adjust the total gain of the link containing amplifier 13 under different ambient temperatures, the specific calculation process is as follows:

[0170] Assuming the ambient temperature is normal, the gain Y1 of amplifier 13 is 21dB (X1 = 11.22); assuming the ambient temperature is low, the gain Y1 of amplifier 13 is 22dB (X1 = 12.59), which is 1dB higher than the original 21dB (X1 increases by 1.37); assuming the ambient temperature is high, the gain Y1 of amplifier 13 is 20dB (X1 = 10), which is 1dB lower than the original 21dB (X1 decreases by 1.22).

[0171] As mentioned earlier, based on the location relationship between mobile phone A and the base station, it is assumed that the system requires the amplifier 13 to have a variable gain range of 10dB to 20dB. When mobile phone A is close to the base station, the two first attenuators 11 always reduce the gain Y1 of amplifier 13 by 10dB. In other words, the total gain Y3 of the two first attenuators 11 is -10dB, and the total gain X3 of the two first attenuators 11 is 0.32. When mobile phone A is far from the base station, the two first attenuators 11 always reduce the gain Y1 of amplifier 13 by 0dB. In other words, the total gain Y3 of the two first attenuators 11 is 0dB, and the total gain X3 of the two first attenuators 11 is 1. Where Y3 = 20lgX3.

[0172] Regardless of whether mobile phone A is close or close to the base station, if the ambient temperature is normal, the two second attenuators 12 reduce the gain Y1 of amplifier 13 by 1dB. In other words, the total gain Y4 of the two second attenuators 12 is -1dB, and the total gain X4 of the two second attenuators 12 is 0.89. If the ambient temperature is low, the two second attenuators 12 reduce the gain of amplifier 13 by 2dB. In other words, the total gain Y4 of the two second attenuators 12 is -2dB, and the total gain X4 of the two second attenuators 12 is 0.79. If the ambient temperature is high, the two second attenuators 12 reduce or increase the gain X4 of amplifier 13 by 0dB. In other words, the total gain Y4 of the two second attenuators 12 is 0dB, and the total gain X4 of the two second attenuators 12 is 1. Where Y4 = 20lgX4.

[0173] In summary, when the distance between mobile phone A and the base station is relatively short, if the ambient temperature is low, the total gain Y2 of the link where amplifier 13 is located is 22dB - 10dB - 2dB = 10dB, and X2 = 12.59 * 0.32 * 0.79 ≈ 3.16; if the ambient temperature is normal, the total gain Y2 of the link where amplifier 13 is located is 21dB - 10dB - 1dB = 10dB, and X2 = 11.22 * 0.32 * 0.89 ≈ 3.16; if the ambient temperature is high, the total gain Y2 of the link where amplifier 13 is located is 20dB - 10dB - 0dB = 10dB, and X2 = 10 * 0.32 * 1 ≈ 3.16. Therefore, based on different ambient temperatures, the total gain Y2 of the link where amplifier 13 is located can be maintained at 10dB and X2 at 3.16 by using two first attenuators 11 and two second attenuators 12.

[0174] When the distance between mobile phone A and the base station is relatively far, if the ambient temperature is low, the total gain Y2 of the link where amplifier 13 is located is 22dB - 0dB - 2dB = 20dB, and X2 = 12.59 * 1 * 0.79 ≈ 10; if the ambient temperature is normal, the total gain Y2 of the link where amplifier 13 is located is 21dB - 0dB - 1dB = 20dB, and X2 = 11.22 * 1 * 0.89 ≈ 10; if the ambient temperature is high, the total gain Y2 of the link where amplifier 13 is located is 20dB - 0dB - 0dB = 20dB, and X2 = 10 * 1 * 1 ≈ 10. Therefore, based on different ambient temperatures, the total gain Y2 of the link where amplifier 13 is located can be maintained at 20dB and X2 at 10 by using two first attenuators 11 and two second attenuators 12.

[0175] Of course, the above calculation data is only an example. Other gain data that are calculated without departing from the above circuit connection method are all within the protection scope of this application.

[0176] In some possible implementations, the embodiments of this application do not limit the specific type and structure of the second attenuator 12, as long as the attenuation of the radio frequency signal by the second attenuator 12 can be dynamically adjusted according to external factors (e.g., ambient temperature).

[0177] Optionally, the second attenuator 12 can be VVA. The second transistor in the voltage-variable attenuator can be an N-type transistor or a P-type transistor. The number of second transistors can be one or more. If there are multiple second transistors, all of them can be N-type transistors or P-type transistors, or the multiple second transistors can include both N-type and P-type transistors.

[0178] In some possible ways of implementation, such as Figure 5 and Figure 6 As shown, the integrated circuit may further include a bias circuit 14, which is coupled to the gate of the second transistor. The bias circuit 14 can dynamically input an analog signal to the gate of the second transistor based on external factors, such as changes in ambient temperature, to adjust the impedance of the second transistor, thereby enabling the second attenuator 12 to conduct at different degrees and thus attenuating the radio frequency signal to different degrees. Furthermore, the first terminal of the second transistor is coupled to the input or output side of the amplifier 13, and the second terminal of the second transistor is coupled to ground. The first terminal of the second transistor can be the source, and the second terminal can be the drain. Alternatively, the first terminal of the second transistor can be the drain, and the second terminal can be the source.

[0179] It should be noted that the foregoing examples illustrate the case of one or two second attenuators 12. In this embodiment, the number of second attenuators 12 can be one or more. When there are multiple second attenuators 12, multiple second attenuators 12 can be controlled by the same bias circuit 14, or the bias circuit 14 can be paired one-to-one with multiple second attenuators 12, with each bias circuit 14 controlling its corresponding second attenuator 12. Furthermore, when the same bias circuit 14 controls multiple second attenuators 12, the analog signal values ​​input by the same bias circuit 14 to the second transistors of the multiple second attenuators 12 can be the same or different.

[0180] The number of second transistors in each second attenuator 12 can be one or more. When a second attenuator 12 includes multiple second transistors, the same bias circuit 14 can control all the second transistors in one second attenuator 12; alternatively, the bias circuit 14 can correspond one-to-one with the multiple second transistors, with each bias circuit 14 controlling its corresponding second transistor. Furthermore, when the same bias circuit 14 controls multiple second transistors, the analog signal values ​​input by the same bias circuit 14 to the multiple second transistors can be the same or different.

[0181] Furthermore, the analog signal input to the gate of the second transistor by the bias circuit 14 can be either a voltage signal or a current signal. For ease of explanation, the following description will use the example of the analog signal input to the gate of the second transistor by the bias circuit 14 being a voltage signal.

[0182] The following example illustrates how the bias circuit 14 controls the second attenuator 12 based on the ambient temperature, using the change in gain of amplifier 13 caused by ambient temperature as an example.

[0183] One possible way to achieve this is, such as Figure 5As shown, the analog signal input to the gate of the second transistor by the bias circuit 14 can change with its own temperature. In this case, the ambient temperature can be the temperature of the bias circuit 14. In this way, the bias circuit 14 can input a dynamic analog signal to the gate of the second transistor in real time according to its own real-time temperature. Under the control of the analog signal, the impedance of the second transistor can change with the analog signal, thereby changing the conduction level of the second transistor. This causes the attenuation of the RF signal to decrease as the ambient temperature increases and increase as the ambient temperature decreases, thus compensating for the change in gain of the amplifier 13 due to changes in ambient temperature.

[0184] Another possible way to achieve this is, such as Figure 6 As shown, the integrated circuit may further include a temperature detection circuit 15, which is coupled to a bias circuit 14. The temperature detection circuit 15 detects the ambient temperature and sends this information to the bias circuit 14. The bias circuit 14 sends an analog signal to the gate of the second transistor based on the received ambient temperature information. Under the control of the analog signal, the impedance of the second transistor can change accordingly, thereby changing the conduction level of the second transistor. This causes the attenuation of the radio frequency signal to decrease as the ambient temperature increases and increase as the ambient temperature decreases, thus compensating for the change in gain of the amplifier 13 due to changes in ambient temperature.

[0185] In this implementation, in one possible scenario, the temperature detection circuit 15 can send real-time ambient temperature information to the bias circuit 14. After receiving the real-time ambient temperature information, the bias circuit 14 can input a real-time analog signal to the second attenuator 12 to control the second attenuator 12 to adjust the attenuation of the radio frequency signal in real time according to the ambient temperature. In another possible scenario, the temperature detection circuit 15 can also send ambient temperature information to the bias circuit 14 once at regular intervals. After receiving the ambient temperature information at regular intervals, the bias circuit 14 can input an analog signal to the second attenuator 12 to control the second attenuator 12 to adjust the attenuation of the radio frequency signal according to the ambient temperature within a certain period.

[0186] It should be noted that the embodiments of this application do not limit the specific duration of a certain time period. For example, a certain time period can be 20ms or 1s. Furthermore, the ambient temperature measured by the temperature detection circuit 15 can be the ambient temperature around the temperature detection circuit 15 or the ambient temperature around the amplifier 13.

[0187] Considering that if the entire integrated circuit is integrated onto a single chip, the size of the entire integrated circuit is very small, and the ambient temperature around any device within the integrated circuit is close to the ambient temperature around other devices within the integrated circuit. Therefore, regardless of whether the ambient temperature represents the temperature of the bias circuit 14 itself, the ambient temperature around the temperature detection circuit 15, or the temperature of other devices within the integrated circuit, it is the same as the ambient temperature around the amplifier 13.

[0188] Of course, other methods can also be used to make the bias circuit 14 input an analog signal to the gate of the second transistor according to the ambient temperature, so that the attenuation of the radio frequency signal by the second transistor decreases as the ambient temperature increases under the control of the analog signal.

[0189] The working principle of the second transistor will be explained in detail below with reference to the bias circuit 14.

[0190] Taking an N-type transistor as an example, if the analog signal input from the bias circuit 14 to the gate of the second transistor is smaller, the impedance of the second transistor is larger, and the second transistor is less fully turned on. The less of the RF signal is released to ground through the second transistor, the smaller the attenuation of the RF signal by the second attenuator 12, and the greater the gain of the link containing amplifier 13. Conversely, if the analog signal input from the bias circuit 14 to the gate of the second transistor is larger, the impedance of the second transistor is smaller, and the second transistor is more fully turned on. The more of the RF signal is released to ground through the second transistor, the greater the attenuation of the RF signal by the second attenuator 12, and the smaller the gain of the link containing amplifier 13.

[0191] Taking a P-type transistor as an example, if the analog signal input from the bias circuit 14 to the gate of the second transistor is larger, the impedance of the second transistor is larger, and the second transistor is less fully turned on. The less of the RF signal is released to ground through the second transistor, the smaller the attenuation of the RF signal by the second attenuator 12, and the greater the gain of the link containing amplifier 13. Conversely, if the analog signal input from the bias circuit 14 to the gate of the second transistor is smaller, the impedance of the second transistor is smaller, and the second transistor is more fully turned on. The more of the RF signal is released to ground through the second transistor, the greater the attenuation of the RF signal by the second attenuator 12, and the smaller the gain of the link containing amplifier 13.

[0192] Specifically, the gain G of amplifier 13 is related to the digital signal code input to the multiple first transistors and the analog signal V input to the second transistor, and can be represented by formula 1: G(code,V). Figure 7a As shown, if the second transistor is an N-type transistor, the smaller the analog signal received at the gate of the second transistor, the greater the gain of amplifier 13, which can be expressed by formula 2: To represent. For example... Figure 7b As shown, if the second transistor is a P-type transistor, the larger the analog signal received at the gate of the second transistor, the greater the gain of amplifier 13, which can be expressed by formula 3: To express.

[0193] As the ambient temperature T increases, the attenuation of the radio frequency signal by the second attenuator 12 decreases, thereby increasing the gain of the amplifier 13 as the ambient temperature T increases, as can be expressed by formula 4: To express.

[0194] Furthermore, such as Figure 8a and Figure 8b As shown, the relationship curve between the analog signal V and the ambient temperature T can be set.

[0195] like Figure 8a As shown, taking an N-type transistor as an example, the higher the ambient temperature T, the smaller the analog signal V received by the gate of the second transistor, and the smaller the attenuation of the radio frequency signal by the second transistor. This can be expressed by formula 5: V = a - bT, (b > 0). Where a and b are constants.

[0196] like Figure 8b As shown, taking a P-type transistor as an example, the higher the ambient temperature T, the larger the analog signal V received by the gate of the second transistor, and the smaller the attenuation of the radio frequency signal by the second transistor. This can be expressed by formula 6: V = a + bT, (b > 0). Where a and b are constants.

[0197] In this way, if the second transistor is an N-type transistor, the relationship between the ambient temperature T, the analog signal input to the gate of the second transistor, and the attenuation of the radio frequency signal by the second transistor can be determined based on the parameters of the second transistor according to Formulas 1, 2, 4, and 5, thereby adjusting the gain of the link where amplifier 13 is located according to the ambient temperature T.

[0198] For example, Formula 5 can be expressed as V = 1.44 - 0.012T. When the ambient temperature is -30℃, the analog signal input to the gate of the second transistor from the bias circuit 14 can be 1.8V; when the ambient temperature is 120℃, the analog signal input to the gate of the second transistor from the bias circuit 14 can be 0V. By adjusting the size of the second transistor, the gain of the second attenuator 12 is 0dB when V = 0V, and -2dB when V = 1.8V. In this way, the temperature drift compensation range of the second attenuator 12 is 2dB, which precisely compensates for the temperature drift of the amplifier 13, keeping the total gain of the link containing the amplifier 13 unchanged with temperature.

[0199] If the second transistor is a P-type transistor, the relationship between the ambient temperature T, the analog signal input to the gate of the second transistor, and the attenuation of the radio frequency signal by the second transistor can be determined based on the parameters of the second transistor according to formulas 1, 3, 4, and 6. Thus, the gain of the link where amplifier 13 is located can be adjusted according to the ambient temperature T.

[0200] For example, Formula 6 can be expressed as V = 0.36 + 0.012T. When the ambient temperature is -30℃, the analog signal input to the gate of the second transistor from the bias circuit 14 can be 0V; when the ambient temperature is 120℃, the analog signal input to the gate of the second transistor from the bias circuit 14 can be 1.8V. By adjusting the size of the second transistor, the gain of the second attenuator 12 is -2dB when V = 0V and 0dB when V = 1.8V. In this way, the temperature drift compensation range of the second attenuator 12 is 2dB, which precisely compensates for the temperature drift of the amplifier 13, keeping the total gain of the link containing the amplifier 13 unchanged with temperature.

[0201] In some possible implementations, the active layers of the multiple first transistors can have different dimensions, so that different degrees of attenuation can be achieved by controlling the number of on / off states of the multiple first transistors of different sizes. If the number of second transistors is only one, the layout area of ​​the integrated circuit can also be saved.

[0202] Furthermore, it should be noted that the embodiments of this application do not limit the order of steps S110, S120, and S130. After the radio frequency signal corresponding to step S110 is transmitted in the amplifier circuit, step S120 can be executed first, where the attenuation of the radio frequency signal is adjusted by controlling the number of on / off states of multiple first transistors under the control of digital signals; then step S130 can be executed, where the attenuation of the radio frequency signal is adjusted by adjusting the impedance of the second transistor under the control of analog signals; after that, step S110 can be executed again to continue transmitting the attenuated radio frequency signal in the amplifier circuit. Alternatively, after the radio frequency signal corresponding to step S110 is transmitted in the amplifier circuit, step S130 can be executed first, where the attenuation of the radio frequency signal is adjusted by adjusting the impedance of the second transistor under the control of analog signals; then step S120 can be executed, where the attenuation of the radio frequency signal is adjusted by controlling the number of on / off states of multiple first transistors under the control of digital signals; after that, step S110 can be executed again to continue transmitting the attenuated radio frequency signal in the amplifier circuit.

[0203] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. An integrated circuit, characterized in that, Includes amplifier circuitry; The amplifier circuit includes an input terminal, an output terminal, an amplifier coupled between the input terminal and the output terminal, and a radio frequency signal transmission line; the radio frequency signal transmission line is coupled to the amplifier. The amplifier circuit is used to amplify the radio frequency signal coupled at the input terminal and output it through the output terminal; The amplifier circuit further includes a first attenuator and a second attenuator, which together are used to attenuate the radio frequency signal; The first attenuator includes a plurality of first transistors coupled to ground, used to adjust the attenuation of the radio frequency signal by controlling the number of the plurality of first transistors being turned on and off under the control of a digital signal; The second attenuator includes a grounded second transistor for adjusting the attenuation of the radio frequency signal by adjusting the impedance of the second transistor under the control of an analog signal; wherein the plurality of first transistors are connected in parallel with the second transistor.

2. The integrated circuit according to claim 1, characterized in that, The plurality of first transistors and second transistors are coupled between the input side of the amplifier and the ground terminal.

3. The integrated circuit according to claim 1 or 2, characterized in that, The plurality of first transistors and second transistors are coupled between the output side of the amplifier and the ground terminal.

4. The integrated circuit according to claim 1, characterized in that, Both the input and output sides of the radio frequency signal transmission line are coupled to the first attenuator and the second attenuator.

5. The integrated circuit according to claim 1, characterized in that, The plurality of first transistors are coupled between the input side of the amplifier and ground, and the second transistor is coupled between the output side of the amplifier and ground; or, The plurality of first transistors are coupled between the output side of the amplifier and the ground terminal, and the second transistor is coupled between the input side of the amplifier and the ground terminal.

6. The integrated circuit according to any one of claims 1-2 and 4-5, characterized in that, The integrated circuit also includes a control circuit; The control circuit is coupled to the gate of the plurality of first transistors and is used to input the digital signal to the gate of the plurality of first transistors.

7. The integrated circuit according to any one of claims 1-2 and 4-5, characterized in that, The integrated circuit also includes a bias circuit; The bias circuit is coupled to the gate of the second transistor and is used to input the analog signal to the gate of the second transistor.

8. The integrated circuit according to claim 7, characterized in that, The bias circuit is used to input the analog signal to the second transistor according to the ambient temperature, so that the attenuation of the radio frequency signal decreases as the ambient temperature increases.

9. The integrated circuit according to claim 8, characterized in that, The ambient temperature is the temperature of the bias circuit. The bias circuit is used to input the analog signal to the gate of the second transistor according to the ambient temperature, so that the second attenuator, under the control of the analog signal, reduces the attenuation of the radio frequency signal as the ambient temperature increases.

10. The integrated circuit according to claim 8, characterized in that, The integrated circuit further includes a temperature detection circuit coupled to the bias circuit; the temperature detection circuit is used to detect the ambient temperature and send the ambient temperature information to the bias circuit. The bias circuit is used to input the analog signal to the gate of the second transistor based on the received ambient temperature information, so that the second attenuator, under the control of the analog signal, reduces the attenuation of the radio frequency signal as the ambient temperature increases.

11. The integrated circuit according to any one of claims 8-10, characterized in that, The second transistor is an N-type transistor. The higher the ambient temperature, the smaller the analog signal input to the gate of the second transistor from the bias circuit; or, The second transistor is a P-type transistor. The higher the ambient temperature, the greater the analog signal input to the gate of the second transistor by the bias circuit.

12. The integrated circuit according to any one of claims 1-2, 4-5, and 8-10, characterized in that, The first attenuator is a digital step attenuator, and the second attenuator is a voltage-variable attenuator.

13. The integrated circuit according to any one of claims 1-2, 4-5, and 8-10, characterized in that, The active layers of the plurality of first transistors have different sizes.

14. A radio frequency transceiver, characterized in that, The radio frequency transceiver includes a transmitter and a receiver; both the transmitter and the receiver include the integrated circuit according to any one of claims 1-13.

15. A terminal, characterized in that, Includes an antenna and the radio frequency transceiver as described in claim 14, wherein the antenna is coupled to the transmitter and receiver of the radio frequency transceiver; The antenna is used to transmit radio frequency signals to the receiver; The antenna is also used to receive radio frequency signals transmitted by the transmitter.

16. A control method for an integrated circuit, characterized in that, The integrated circuit includes an amplifier circuit; the amplifier circuit includes an input terminal, an output terminal, a first attenuator, a second attenuator, an amplifier coupled between the input terminal and the output terminal, and a radio frequency signal transmission line; the radio frequency signal transmission line is coupled to the amplifier; the first attenuator includes a plurality of first transistors coupled to ground, the second attenuator includes a second transistor coupled to ground, and the plurality of first transistors and the second transistor are connected in parallel; The control method for the integrated circuit includes: The radio frequency signal coupled at the input terminal is amplified by the amplifier circuit and then output through the output terminal. Under the control of digital signals, the attenuation of the radio frequency signal is adjusted by controlling the number of times the plurality of first transistors are turned on and off. Under the control of the analog signal, the attenuation of the radio frequency signal is adjusted by adjusting the impedance of the second transistor.

17. The integrated circuit control method according to claim 16, characterized in that, The integrated circuit further includes a control circuit; the control circuit is coupled to the gate of the plurality of first transistors; The method of adjusting the attenuation of the radio frequency signal by controlling the number of on / off states of the plurality of first transistors under the control of digital signals includes: The control circuit inputs the digital signal to the gate of the plurality of first transistors, and under the control of the digital signal, the attenuation of the radio frequency signal is adjusted by controlling the number of the plurality of first transistors on and off.

18. The integrated circuit control method according to claim 16 or 17, characterized in that, The integrated circuit further includes a bias circuit; the bias circuit is coupled to the gate of the second transistor. The method of adjusting the attenuation of the radio frequency signal by adjusting the impedance of the second transistor under the control of the analog signal includes: The analog signal is input to the gate of the second transistor using the bias circuit. Under the control of the analog signal, the attenuation of the radio frequency signal is adjusted by adjusting the impedance of the second transistor.

19. The integrated circuit control method according to claim 18, characterized in that, The step of inputting the analog signal to the gate of the second transistor using the bias circuit includes: The analog signal is input to the second transistor using the bias circuit based on the ambient temperature.

20. The integrated circuit control method according to claim 19, characterized in that, The ambient temperature is the temperature of the bias circuit. The step of inputting the analog signal to the second transistor using the bias circuit based on the ambient temperature includes: The bias circuit inputs the analog signal to the gate of the second transistor according to the ambient temperature, so that the second attenuator, under the control of the analog signal, reduces the attenuation of the radio frequency signal as the ambient temperature increases.

21. The integrated circuit control method according to claim 19, characterized in that, The integrated circuit further includes a temperature detection circuit, which is coupled to the bias circuit. The step of inputting the analog signal to the second transistor using the bias circuit based on the ambient temperature includes: The ambient temperature is detected using the temperature detection circuit, and the ambient temperature information is sent to the bias circuit. The bias circuit inputs the analog signal to the gate of the second transistor based on the received ambient temperature information, so that the second attenuator, under the control of the analog signal, reduces the attenuation of the radio frequency signal as the ambient temperature increases.

22. The integrated circuit control method according to any one of claims 19-21, characterized in that, The second transistor is an N-type transistor; The step of inputting the analog signal to the second transistor using the bias circuit based on the ambient temperature includes: The higher the ambient temperature, the smaller the analog signal input to the gate of the second transistor through the bias circuit; The second transistor is a P-type transistor; the step of inputting the analog signal to the second transistor using the bias circuit according to the ambient temperature includes: The higher the ambient temperature, the greater the analog signal input to the gate of the second transistor through the bias circuit.

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