An active frequency selective surface structure based on photodiodes

Abstract

The application relates to an active frequency selective surface structure based on a photodiode, which comprises a metal layer, a closed gap etched on the metal layer, and a plurality of photodiodes arranged in a central symmetry on the closed gap; when the light intensity of a dynamic electromagnetic wave with different angles of incidence is greater than or equal to a preset light intensity, the plurality of photodiodes are synchronously turned on to make the internal metal of the closed gap and the metal layer conductive, so that the closed gap and the metal layer totally reflect the incident dynamic electromagnetic wave; when the light intensity is less than the preset light intensity, the plurality of photodiodes are synchronously turned off, so that the metal layer reflects part of the dynamic electromagnetic wave located on the surface of the metal layer, and the closed gap allows part of the dynamic electromagnetic wave located on the surface of the closed gap to be incident. The device can flexibly switch between a total reflection mode and a wave transmission mode to protect the radio frequency device to be protected, avoid thermal damage of the radio frequency device caused by dynamic high-power electromagnetic waves, and greatly reduce the damage risk of the radio frequency device.

Description

Technical Field

[0001] This invention belongs to the field of electromagnetic protection technology, specifically relating to an active frequency selective surface structure based on a photodiode. Background Technology

[0002] A frequency selective surface (FSS) is an infinitely large periodic array structure composed of identical metal patches or aperture units. It exhibits different transmission characteristics for electromagnetic waves based on their incident frequency, angle, and polarization, effectively controlling the transmission or reflection of electromagnetic waves near their resonant frequency. It has wide applications in radar stealth, electromagnetic compatibility, electromagnetic interference suppression, and high-power electromagnetic wave protection.

[0003] With the continuous development of electromagnetic control technology, the requirements for FSS design are becoming increasingly stringent, making it increasingly difficult to design an FSS capable of adapting to dynamic electromagnetic environments. Traditional passive FSSs, due to their fixed unit structure and transmission characteristics after fabrication, cannot meet the switching requirements in dynamic scenarios. While existing active FSSs can be applied to dynamic scenarios, their response speed is affected by the components in the circuit, and their control sensitivity is significantly influenced by the feeder network design, resulting in low response speed and sensitivity. Summary of the Invention

[0004] To address the aforementioned problems in the prior art, this invention provides an active frequency-selective surface structure based on a photodiode. The technical problem to be solved by this invention is achieved through the following technical solution:

[0005] This invention provides an active frequency selective surface structure based on photodiodes, comprising: a metal layer, on which a closed slit is etched, and a plurality of photodiodes are centrally symmetrically disposed on the closed slit; wherein, when the illumination intensity of dynamic electromagnetic waves incident at different angles is greater than or equal to a preset light intensity, the plurality of photodiodes are synchronously turned on, so that the metal inside the closed slit is connected to the metal layer, thereby the closed slit and the metal layer totally reflect the incident dynamic electromagnetic waves; when the illumination intensity of the dynamic electromagnetic waves incident at different angles is less than the preset light intensity, the plurality of photodiodes are synchronously turned off, so that the metal inside the closed slit is disconnected from the metal layer, thereby the metal layer reflects part of the dynamic electromagnetic waves located on the surface of the metal layer, and the closed slit allows part of the dynamic electromagnetic waves located on the surface of the closed slit to be incident.

[0006] In some embodiments, the outer shape of the closed gap is polygonal, and each side of the closed gap is provided with a photodiode.

[0007] In some embodiments, the closed gap includes a polygonal gap and a plurality of T-shaped rotating gaps, the plurality of T-shaped rotating gaps being located within the closed area formed by the polygonal gap, and each T-shaped rotating gap being disposed at a vertex of the polygonal gap and communicating with the polygonal gap through the vertex.

[0008] In some embodiments, each T-shaped rotating slit includes a first slit and a second slit, the first slit being disposed at a apex of the polygonal slit and communicating with the polygonal slit through the apex, the second slit being disposed at an end of the first slit away from the apex, and the first slit being perpendicular to the second slit and communicating with the second slit.

[0009] In some embodiments, the angle between the first slit and the two sides forming the apex of the polygonal slit is 45°.

[0010] In some embodiments, when the outer shape of the closed gap is a square, the side length of the square is in the range of 7mm to 9mm, and the gap width is in the range of 0.4mm to 0.6mm.

[0011] In some embodiments, the width of the first gap and the width of the second gap are the same, but their lengths are different.

[0012] In some embodiments, the width of the first gap and the width of the second gap are both in the range of 0.4mm to 0.6mm, the length of the first gap is in the range of 1.2mm to 1.4mm, and the length of the second gap is in the range of 1.5mm to 1.7mm.

[0013] In some embodiments, the photodiode-based active frequency selective surface structure further includes: a dielectric substrate; the dielectric substrate is disposed on the side of the metal layer away from the closed gap.

[0014] In some embodiments, the length of the metal layer or the dielectric substrate is in the range of 12mm to 16mm, and the width is in the range of 12mm to 16mm; the thickness of the metal layer is in the range of 0.017mm to 0.035mm, and the thickness of the dielectric substrate is in the range of 0.4mm to 0.6mm.

[0015] Compared with existing technologies, the beneficial effects of this invention are as follows: Addressing the issues of existing active FSSs failing to achieve high response speeds and exhibiting low sensitivity, this invention proposes an active frequency selective surface structure based on photodiodes. This device can rapidly respond to changes in the dynamic electromagnetic wave intensity based on incident light from different angles. By controlling the conduction or disconnection of the photodiode, it flexibly switches between the total internal reflection mode and the wave transmission mode of the closed gap, thereby protecting the radio frequency device when dynamic electromagnetic waves are incident. This avoids thermal damage to the radio frequency device caused by dynamic high-power electromagnetic waves, greatly reducing the risk of damage or even destruction of the radio frequency device. Attached Figure Description

[0016] Figure 1 This is a three-dimensional example diagram of an active frequency selective surface structure based on a photodiode provided in an embodiment of the present invention;

[0017] Figure 2 This is a front view of the active frequency selective surface structure based on a photodiode provided in an embodiment of the present invention;

[0018] Figure 3 This is the transmission / reflection characteristic of the active frequency selective surface structure based on the photodiode when the photodiode is turned on, as provided in the embodiments of the present invention;

[0019] Figure 4 This is the transmission / reflection characteristic of the active frequency selective surface structure based on the photodiode when the photodiode is disconnected, as provided in the embodiments of the present invention.

[0020] Figure 5 This is a schematic diagram showing the dimensions of an active frequency selective surface structure based on a photodiode provided in an embodiment of the present invention.

[0021] Figure 6 This is an arrangement diagram of multiple active frequency selective surface structures based on photodiodes provided in the embodiments of the present invention;

[0022] Figure 7 This is a simulation diagram of the S-parameters of an active frequency-selective surface structure based on a photodiode when the photodiode is conducting, using TE polarized waves or TM polarized waves as incident.

[0023] Figure 8 This is a simulation diagram of the S-parameters of an active frequency-selective surface structure based on a photodiode when the photodiode is disconnected, using TE polarized waves or TM polarized waves.

[0024] Figure 9 This is a performance simulation diagram of the active frequency selective surface structure based on the photodiode when the photodiode is in the on state, using TE polarized waves or TM polarized waves obliquely incident on it, according to an embodiment of the present invention.

[0025] Figure 10 This is a performance simulation diagram of the active frequency selective surface structure based on the photodiode when the photodiode is in the off state, using TE polarized waves or TM polarized waves obliquely incident on it.

[0026] Figure label:

[0027] 1: Metal layer; 2: Sealed gap; 3: Photodiode; 4: Dielectric substrate; 21: Polygonal gap; 22: T-shaped rotating gap; 221: First gap; 222: Second gap. Detailed Implementation

[0028] The present invention will be further described in detail below with reference to specific embodiments, but the implementation of the present invention is not limited thereto.

[0029] In the description of this invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0030] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. In addition, those skilled in the art can combine and integrate the different embodiments or examples described in this specification.

[0031] Although the invention has been described herein in conjunction with various embodiments, those skilled in the art will understand and implement other variations of the disclosed embodiments by reviewing the accompanying drawings, disclosure, and appended claims in carrying out the claimed invention. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude multiple instances. A single processor or other unit can implement several functions listed in the claims. While different dependent claims may recite certain measures, this does not mean that these measures cannot be combined to produce good results.

[0032] To address the issues of existing active FSSs failing to achieve high response speeds and having low sensitivity, this invention proposes an active frequency selective surface structure based on a photodiode, which can effectively improve the response speed and sensitivity of active FSSs.

[0033] The active frequency selective surface structure based on a photodiode proposed in this invention will now be described in detail with reference to the accompanying drawings. Figure 1 This is a three-dimensional example diagram of an active frequency selective surface structure based on a photodiode provided in an embodiment of the present invention; Figure 2 This is a front view of the active frequency selective surface structure based on a photodiode provided in an embodiment of the present invention. Please refer to... Figure 1 and Figure 2 The active frequency selective surface structure based on photodiodes includes: a metal layer 1, a closed gap 2 etched on the metal layer 1, and a plurality of photodiodes 3 centrally symmetrically arranged on the closed gap 2; wherein, when the illumination intensity of dynamic electromagnetic waves incident at different angles is greater than or equal to a preset light intensity, the plurality of photodiodes 3 are synchronously turned on, so that the metal inside the closed gap 2 is connected to the metal layer 1, thereby the closed gap 2 and the metal layer 1 totally reflect the incident dynamic electromagnetic waves; when the illumination intensity of the dynamic electromagnetic waves incident at different angles is less than the preset light intensity, the plurality of photodiodes 3 are synchronously turned off, so that the metal inside the closed gap 2 is disconnected from the metal layer 1, thereby the metal layer 1 reflects part of the dynamic electromagnetic waves located on the surface of the metal layer 1, and the closed gap 2 allows part of the dynamic electromagnetic waves located on the surface of the closed gap 2 to be incident.

[0034] Please continue to refer to Figure 1 and Figure 2 The active frequency selective surface structure based on photodiode also includes: a dielectric substrate 4; the dielectric substrate 4 is disposed on the side of the metal layer 1 away from the closed gap 2.

[0035] Here, the metal layer 1 is made of copper, and the dielectric substrate 4 is made of Rogers RT / duriod 5880, a heat-resistant material with a relative permittivity of 2.2 and a loss tangent of 0.0009.

[0036] Here, the closed gap 2 includes a polygonal gap 21 and multiple T-shaped rotating gaps 22. The multiple T-shaped rotating gaps 22 are located within the closed area formed by the polygonal gap 21, and each T-shaped rotating gap 22 is located at a vertex of the polygonal gap 21 and communicates with the polygonal gap 21 through the vertex. Each T-shaped rotating gap 22 includes a first gap 221 and a second gap 222. The first gap 221 is located at a vertex of the polygonal gap 21 and communicates with the polygonal gap 21 through the vertex. The second gap 222 is located at the end of the first gap 221 away from the vertex, and the first gap 221 is perpendicular to the second gap 222, and the first gap 221 communicates with the second gap 222. Here, for symmetry, the included angle between the two sides forming the vertex of the first gap 221 and the polygonal gap 21 is... θ All are 45°.

[0037] Here, the outer shape of the closed gap 2 is polygonal, and each side of the closed gap 2 is provided with a photodiode 3. Exemplarily, the outer shape of the closed gap 2, or the polygonal gap 21, can be square, hexagonal, octagonal, or circular. The photodiode 3 is located at the center of each side of the polygonal gap 21, and each photodiode 3 connects the inner metal and the outer metal of the polygonal gap 21.

[0038] Here, under normal conditions, metal layer 1 always reflects the dynamic electromagnetic waves on its surface, and the sealed gap 2 is always in a wave-transmitting state, that is, photodiode 3 is in the off state. When photodiode 3 is turned on, the operating state of the sealed gap 2 is changed, switching it to an electromagnetic wave reflection state. The photodiode 3 is a surface-mount photodiode, model TEMD7000X01, which has advantages such as fast response speed, high sensitivity, and high temperature resistance. Compared to traditional PIN diodes, the multiple photodiodes 3 in this invention can automatically switch between total internal reflection mode and wave-transmitting mode of the sealed gap based on the intensity of the received electromagnetic wave illumination.

[0039] Figure 3 This is the transmission / reflection characteristic of the active frequency selective surface structure based on the photodiode when the photodiode is turned on, as provided in the embodiments of the present invention; Figure 4 This refers to the transmission / reflection characteristics of the active frequency-selective surface structure based on the photodiode when the photodiode is turned off, as provided in this embodiment of the invention. For example... Figure 3 As shown, when the photodiode is turned on, no dynamic electromagnetic waves are incident; as Figure 4 As shown, when the photodiode is turned off, the active frequency selective surface structure based on the photodiode has two reflection bands and one transmission band.

[0040] Figure 5This is a schematic diagram showing the dimensions of an active frequency-selective surface structure based on a photodiode provided in an embodiment of the present invention. Figure 5 As shown, the length of the metal layer 1 or the dielectric substrate 4 is in the range of 12mm to 16mm, and the width is in the range of 12mm to 16mm; the thickness of the metal layer 1 is in the range of 0.017mm to 0.035mm, and the thickness of the dielectric substrate 4 is in the range of 0.4mm to 0.6mm. The length of the metal layer 1 or the dielectric substrate 4... P and width Q The values ​​are the same. Preferably, the thickness of the dielectric substrate 4 is 0.5 mm. In this embodiment of the invention, the thickness of the metal layer 1 or the dielectric substrate 4 is smaller, which has the advantage of a lower profile compared to the existing FSS structure size.

[0041] Please continue to refer to Figure 5 When the outer shape of the closed gap 2 is a square, the side length of the square is... l 1. The gap width is within the range of 7mm to 9mm. g 1. The thickness is within the range of 0.4mm to 0.6mm. Preferably, the side length of the square is... l 1 is 8mm, gap width g 1 is 0.5mm. Furthermore, the width of the first gap 221 is the same as the width of the second gap 222, but their lengths are different. Specifically, the width of the first gap 221 is... g 2. The width of the second gap 222 g All three are within the range of 0.4mm to 0.6mm, and the length of the first gap 221 is... l 2. The length of the second gap 222 is within the range of 1.2mm to 1.4mm. l 3 is within the range of 1.5mm to 1.7mm. Preferably, the gap width of the first gap 221 is... g 2. The width of the second gap 222 g All three are 0.5mm, and the length of the first gap is 221. l 2 is 1.3mm, the length of the second gap 222 l 3 is 1.6mm.

[0042] Figure 6 This is an arrangement diagram of multiple active frequency-selective surface structures based on photodiodes provided in embodiments of the present invention. For example... Figure 6 As shown, multiple active frequency-selective surface structures based on photodiodes are closely arranged.

[0043] To verify the performance of the active frequency selective surface structure based on photodiodes provided in this invention, simulation software was used for simulation. First, the simulation conditions were set as follows: the thickness of metal layer 1 was in the range of 0.017mm to 0.035mm, the thickness of dielectric substrate 4 was 0.5mm, the external shape of the sealed gap 2 was square, the number of photodiodes 3 was 4, and the side length of the square was... l 1 is 8mm, gap width g 1 is 0.5mm, the width of the first gap 221 g 2. The width of the second gap 222 g All three are 0.5mm, and the length of the first gap is 221. l 2 is 1.3mm, the length of the second gap 222 l 3 is 1.6mm.

[0044] Figure 7 This is a simulation diagram of the S-parameters of an active frequency-selective surface structure based on a photodiode, provided by an embodiment of the present invention, when the photodiode is conducting, using either a TE-polarized wave or a TM-polarized wave incident on the photodiode. S11 refers to the reflection coefficient curve, and S21 refers to the transmission coefficient curve. Figure 7 (a) is a simulation diagram of the S-parameters of an active frequency selective surface structure based on a photodiode when the photodiode 3 is conducting and the TE polarized wave is incident. Figure 7 (b) shows the S-parameter simulation diagram of a TM-polarized wave incident on an active frequency-selective surface structure based on a photodiode when photodiode 3 is conducting. Here, TE-polarized wave refers to an incident wave where the electric field vector E is perpendicular to the incident surface and the magnetic field vector H is parallel to the incident surface; TM-polarized wave refers to an incident wave where the magnetic field vector H is perpendicular to the incident surface and the electric field vector E is parallel to the incident surface. Figure 7 As shown in (a) and (b), when the photodiode is conducting, S11 is essentially 0dB, and S21 is less than -20dB. This indicates that regardless of whether TE-polarized or TM-polarized waves are used for incident radiation, the resonant frequency of the active frequency-selective surface structure of the photodiode provided by this invention remains essentially unchanged, the S-parameter simulation results are basically suppressed, and S11 and S21 under both polarizations almost overlap. This demonstrates good polarization insensitivity. Furthermore, when the photodiode is conducting, the active frequency-selective surface structure of the photodiode provided by this invention can achieve total internal reflection performance with a transmission coefficient of less than -20dB and a reflection coefficient of around 0dB in the range of 5GHz to 13GHz.

[0045] Figure 8 This is a simulation diagram of the S-parameters of an active frequency-selective surface structure based on a photodiode when the photodiode is off, using either a TE-polarized wave or a TM-polarized wave incident on the photodiode. Figure 8(a) is a simulation diagram of the S-parameters of the active frequency selective surface structure based on the photodiode when the photodiode 3 is off, with the TE polarized wave incident. Figure 8 (b) in the figure is a simulation diagram of the S-parameters of an active frequency-selective surface structure based on a photodiode when a TM-polarized wave is incident with photodiode 3 disconnected. Figure 8 As shown in (a) and (b), when the photodiode is off, the insertion loss of the transmission coefficient curve (S21) at the resonant frequency is close to zero. This indicates that regardless of whether TE-polarized or TM-polarized waves are used for incident radiation, the resonant frequency of the active frequency-selective surface structure of the photodiode provided by this invention remains essentially unchanged, exhibiting good polarization insensitivity. Furthermore, when the photodiode is off, the active frequency-selective surface structure of the photodiode provided by this invention can achieve a transmission bandwidth of 7.95 GHz to 10.39 GHz with a -3 dB transmission bandwidth, a transmission response of 9.12 GHz, and an insertion loss of 0.09 GHz, demonstrating a wide transmission bandwidth and low insertion loss.

[0046] Figure 9 This is a performance simulation diagram of the active frequency selective surface structure based on the photodiode when it is in the on-state, using TE-polarized waves or TM-polarized waves obliquely incident on it, according to an embodiment of the present invention. The incident angle of the electromagnetic wave increases from 0° to 60° in steps of 15°. Figure 9 (a) is a simulation diagram of the S-parameters of an active frequency-selective surface structure based on a photodiode, using TE polarized waves incident obliquely. Figure 9 (b) in the figure is a simulation diagram of the S-parameters of an active frequency-selective surface structure based on a photodiode, using a TM-polarized wave obliquely incident on the surface. Figure 9 As shown in (a) and (b), under TE polarization mode and TM polarization mode, S11 is basically 0dB and S21 is less than -20dB. When electromagnetic waves are obliquely incident on an active frequency selective surface structure based on a photodiode, the transmission curves of the S-parameters are basically consistent, and they have excellent angular stability and polarization stability.

[0047] Figure 10 This is a performance simulation diagram of an active frequency-selective surface structure based on a photodiode when the photodiode is in the off state, using either a TE-polarized wave or a TM-polarized wave incident obliquely. The incident angle of the electromagnetic wave increases from 0° to 60° in steps of 15°. Figure 10 (a) is a simulation diagram of the S-parameters of an active frequency-selective surface structure based on a photodiode, using TE polarized waves incident obliquely. Figure 10 (b) in the figure is a simulation diagram of the S-parameters of an active frequency-selective surface structure based on a photodiode, using a TM-polarized wave obliquely incident on the surface. Figure 10As shown in (a) and (b), in both TE and TM polarization modes, the insertion loss of the transmission coefficient curve (S21) at the resonant frequency is close to zero. For electromagnetic waves incident obliquely on an active frequency-selective surface structure based on a photodiode, the S-parameter transmission curves are basically consistent. Although grating lobes appear as the angle increases, the performance within the transmission window still exhibits angular stability, and the deviation of the resonant frequency remains within an acceptable range.

[0048] To address the issues of existing active FSSs' inability to achieve high response speeds and low sensitivity, this invention proposes an active frequency selective surface structure based on photodiodes. This device can rapidly respond to changes in the dynamic electromagnetic wave intensity based on the incident angle. By controlling the conduction or disconnection of the photodiode, it flexibly switches between the total internal reflection mode and the wave transmission mode of the closed gap, thereby protecting the radio frequency device to be protected when dynamic electromagnetic waves are incident. This avoids thermal damage to the radio frequency device caused by dynamic high-power electromagnetic waves, greatly reducing the risk of damage or even destruction of the radio frequency device.

[0049] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. An active frequency-selective surface structure based on a photodiode, characterized in that, include: A metal layer (1) is provided, on which closed gaps (2) are etched, and on which multiple photodiodes (3) are centrally symmetrically arranged; When the light intensity of the dynamic electromagnetic waves incident at different angles is greater than or equal to the preset light intensity, the multiple photodiodes (3) are simultaneously turned on, so that the metal inside the closed gap (2) is connected to the metal layer (1), thereby the closed gap (2) and the metal layer (1) reflect the incident dynamic electromagnetic waves completely; when the light intensity of the dynamic electromagnetic waves incident at different angles is less than the preset light intensity, the multiple photodiodes (3) are simultaneously turned off, so that the metal inside the closed gap (2) is disconnected from the metal layer (1), thereby the metal layer (1) reflects part of the dynamic electromagnetic waves located on the surface of the metal layer (1), and the closed gap (2) allows part of the dynamic electromagnetic waves located on the surface of the closed gap (2) to be incident; The external shape of the closed gap (2) is polygonal, and the closed gap (2) includes a polygonal gap (21) and a plurality of T-shaped rotating gaps (22). The plurality of T-shaped rotating gaps (22) are located within the closed area formed by the polygonal gap (21), and each T-shaped rotating gap (22) is located at one of the apex corners of the polygonal gap (21) and communicates with the polygonal gap (21) through the apex corner. Each T-shaped rotating slit (22) includes a first slit (221) and a second slit (222). The first slit (221) is located at one apex of the polygonal slit (21) and communicates with the polygonal slit (21) through the apex. The second slit (222) is located at the end of the first slit (221) away from the apex. The first slit (221) is perpendicular to the second slit (222). The first slit (221) communicates with the second slit (222). The included angle between the two sides of the first slit (221) and the polygonal slit (21) forming the apex is 45°.

2. The active frequency selective surface structure based on a photodiode according to claim 1, characterized in that, Each side of the closed gap (2) is provided with a photodiode (3).

3. The active frequency selective surface structure based on a photodiode according to claim 2, characterized in that, When the outer shape of the closed gap (2) is a square, the side length of the square is in the range of 7mm to 9mm, and the gap width is in the range of 0.4mm to 0.6mm.

4. The active frequency selective surface structure based on a photodiode according to claim 1, characterized in that, The first gap (221) has the same gap width as the second gap (222), but different lengths.

5. The active frequency selective surface structure based on a photodiode according to claim 1, characterized in that, The width of the first gap (221) and the width of the second gap (222) are both within the range of 0.4mm to 0.6mm, the length of the first gap (221) is within the range of 1.2mm to 1.4mm, and the length of the second gap (222) is within the range of 1.5mm to 1.7mm.

6. The active frequency selective surface structure based on a photodiode according to claim 1, characterized in that, The active frequency selective surface structure based on photodiode further includes: a dielectric substrate (4); The dielectric substrate (4) is disposed on the side of the metal layer (1) away from the closed gap (2).

7. The active frequency selective surface structure based on a photodiode according to claim 6, characterized in that, The length of the metal layer (1) or the dielectric substrate (4) is in the range of 12mm to 16mm, and the width is in the range of 12mm to 16mm; the thickness of the metal layer (1) is in the range of 0.017mm to 0.035mm, and the thickness of the dielectric substrate (4) is in the range of 0.4mm to 0.6mm.

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