Silicon carbide ingot laser stripping equipment and laser stripping method

Abstract

The present invention discloses a silicon carbide ingot laser stripping device and a laser stripping method, which include a grinding mechanism, a texturing mechanism, at least two modification mechanisms, a stripping test mechanism and a collecting mechanism. Advantages: The ingot is rough ground and fine ground by the grinding mechanism, so that the plane accuracy of the ingot can be guaranteed. The ingot is first textured and then modified by the modification mechanism, so that the modified layer is subjected to multiple pulse laser scanning and focusing forming, which can effectively ensure that the modified points and modified cracks generated by the modification are effectively connected to form a surface, which is convenient for stripping; the texturing action points block the downward extension of the modified cracks during multiple modification processes, thereby effectively controlling the thickness of the final modified layer, which can effectively reduce the loss of the ingot, improve cutting efficiency and reduce material waste; the wafer is adsorbed by the stripping test mechanism and then moved horizontally for stripping, which can not only detect the unstripped wafers, but also ensure that the unstripped wafers will not be damaged.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a silicon carbide ingot laser stripping device and a laser stripping method. Background Art

[0002] Silicon carbide (SiC) is widely regarded as the most promising third-generation semiconductor substrate material due to its excellent physical and chemical properties. Similar to the processing process of traditional semiconductor wafers, SiC substrate wafers are obtained by cutting SiC ingots and subsequent grinding, polishing, testing and other processes. Among them, ingot cutting is currently widely achieved by multi-wire cutting. The laser modification and stripping technology proposed in recent years is a new method to replace wire cutting. It uses pulsed laser to focus on the inside of the ingot through the surface of the ingot, forms a modified layer inside the ingot by ablation, and then strips the wafer from above the modified layer. The existing laser cutting focuses on the inside of the ingot after a single scan, which will cause the adjacent modified cracks generated by the modification to be unable to be effectively connected into one surface, making it easy to cause chip damage during stripping. In addition, since the modified layer generated by the modification will extend to the bottom of the ingot, the usable part of the remaining ingot after modification is reduced. At the same time, when peeling the wafer, the method of using a suction cup to adsorb the wafer and then lift it up not only cannot effectively detect whether the wafer is peeled, but also once the wafer peeling fails, due to the small contact area between the suction cup and the wafer, the wafer will be damaged due to stress concentration during the lifting process. Once damaged, it will not only cause a waste of raw materials, but also require time to clean up the remaining wafers in the equipment, which reduces work efficiency and increases production costs.

[0003] For example, the State Key Laboratory of Advanced Automotive Design and Manufacturing Technology at Hunan University published a paper titled "Thermal Damage Mechanism and Regulation of Picosecond Laser Modification of Silicon Carbide Wafers" in the Journal of Chemical Engineering, which introduced that the thermal losses that affect silicon carbide include cracks, fragmentation, and oxidation, all of which are caused by heat accumulation. According to this paper, when laser is used to modify silicon carbide ingots, laser ablation will cause heat accumulation in the ingots, which can easily cause crack extension in the ablation holes. When the cracks are too long, the peeling surface roughness of the ingot will increase.

[0004] In view of this, it is necessary to provide a silicon carbide ingot laser stripping device and a laser stripping method. Summary of the invention

[0005] The present invention provides a silicon carbide ingot laser stripping device and a laser stripping method, which effectively solve the problems of low efficiency, low raw material utilization and high cost of existing ingot laser stripping.

[0006] The technical solution adopted by the present invention is:

[0007] The silicon carbide ingot laser stripping equipment comprises a grinding mechanism, a texturing mechanism, at least two modifying mechanisms, a stripping test mechanism and a collecting mechanism, wherein the grinding mechanism is used for rough grinding and fine grinding of the ingot, the texturing mechanism is used for texturing the ingot, the modifying mechanism is used for modifying the textured ingot, and the stripping test mechanism is used for stripping and stripping test of the modified wafer.

[0008] Furthermore, the collection mechanism is used to collect the wafers, the peeling test mechanism includes a first machine, a water tank arranged on the first machine, a first rotating material receiving assembly arranged on the first machine, a transfer test assembly arranged on the first machine, and a vacuum carrier arranged on the water tank, the transfer test includes a three-axis module arranged on the first machine, a mounting plate driven by the three-axis module, a first clamping jaw assembly arranged on the mounting plate, an ultrasonic generator assembly, and an adsorption test assembly, and the ultrasonic generator assembly and the adsorption test assembly can be extended into the water tank at the same time. The adsorption test assembly includes a No. 1 cylinder A fixedly arranged on the mounting plate along the Z-axis direction with the output end downward, a vacuum suction cup fixedly arranged at the output end of the No. 1 cylinder A, and the vacuum suction cup can be extended into the water tank, the ultrasonic generator assembly includes a No. 1 cylinder B fixedly arranged on the mounting plate along the Z-axis direction with the output end downward, and an ultrasonic transducer fixedly arranged at the output end of the No. 1 cylinder B, and both the ultrasonic transducer and the vacuum suction cup can be extended into the water tank.

[0009] Furthermore, the grinding mechanism includes machine No. 1, a transport robot No. 1 arranged on machine No. 1, a rough grinding station arranged on machine No. 1, a fine grinding station arranged on machine No. 1, a cleaning and drying station arranged on machine No. 1, a loading platform and an unloading platform arranged on machine No. 1, and the transport robot No. 1 is used to transfer the ingot between the loading platform, the rough grinding station, the fine grinding station, the cleaning and drying station and the unloading platform.

[0010] Furthermore, the texturing mechanism includes a No. 3 machine, a No. 3 XY two-axis moving platform arranged on the No. 3 machine, a No. 3 carrier driven by the No. 3 XY two-axis moving platform, a No. 3 bracket arranged on the No. 3 machine, a No. 3 material receiving assembly arranged on the No. 3 machine, a No. 3 crystal ingot suction and placement assembly arranged on the No. 3 bracket, and a No. 3 laser irradiation unit arranged on the No. 3 bracket, and the No. 3 laser irradiation unit includes a No. 3 laser arranged on the No. 3 bracket, a No. 3 upper optical box, a No. 3 lower optical box, a No. 3 laser irradiation objective lens arranged on the No. 3 lower optical box, and a No. 3 displacement sensor.

[0011] Furthermore, there are three modification mechanisms, which include a No. 4 machine, a No. 4 XY two-axis mobile platform arranged on the No. 4 machine, a No. 4 carrier driven by the No. 4 XY two-axis mobile platform, a No. 4 bracket arranged on the No. 4 machine, a No. 4 crystal ingot suction and release assembly arranged on the No. 4 bracket, a No. 4 material receiving assembly arranged on the No. 4 machine, a light source arranged on the No. 4 bracket, a camera arranged on the No. 4 bracket and a No. 4 laser irradiation unit arranged on the No. 4 bracket, the No. 4 laser irradiation unit includes a No. 4 laser arranged on the No. 4 bracket, a No. 4 upper optical box, a No. 4 lower optical box, a No. 4 laser irradiation objective lens arranged on the No. 4 lower optical box and a No. 4 displacement sensor; the No. 3 laser irradiation unit is the same as the No. 4 laser irradiation unit, and the No. 4 laser irradiation unit at least includes an optical path module and a real-time focusing module.

[0012] Furthermore, the structure of the No. 3 crystal ingot suction and placement component is the same as that of the No. 4 crystal ingot suction and placement component. The No. 3 crystal ingot suction and placement component includes a No. 3 mounting frame arranged on a No. 3 bracket, a No. 3 electric cylinder fixedly arranged on the No. 3 mounting frame along the Z-axis direction with the output end downward, a No. 3 rotating platform A arranged at the output end of the No. 3 electric cylinder, a rotating plate driven by the No. 3 rotating platform A, and two No. 3 clamps arranged at both ends of the rotating plate and symmetrical about the No. 3 rotating platform A. The No. 3 material receiving component and the No. 4 material receiving component have the same structure. The No. 3 material receiving component includes a No. 3 mounting frame fixedly arranged on the No. 3 mounting frame along the Z-axis direction with the output end downward, a No. 3 rotating platform A arranged at the output end of the No. 3 electric cylinder, a rotating plate driven by the No. 3 rotating platform A, and two No. 3 clamps arranged at both ends of the rotating plate and symmetrical about the No. 3 rotating platform A. There is a No. 3 linear module arranged on the No. 3 machine platform, a No. 3 frame fixedly arranged on the output end of the No. 3 linear module, a No. 3 lifting frame fixedly arranged on the No. 3 frame, a No. 3 cylinder arranged on the No. 3 frame for driving the No. 3 lifting frame to lift, a No. 3 rotating platform B arranged on the No. 3 lifting frame, and a No. 3 material receiving table driven by the No. 3 rotating platform B. A No. 3 material receiving position is respectively arranged at both ends of the No. 3 material receiving table, and the two No. 3 material receiving positions are symmetrical about the No. 3 rotating platform B, and one of the No. 3 material receiving positions can correspond to one of the No. 3 clamps up and down.

[0013] Furthermore, the collecting mechanism includes a No. 8 machine, a material rack arranged on the No. 8 machine, a wafer transfer assembly and a crystal ingot transfer assembly arranged on the No. 8 machine and located between the material rack and the water tank.

[0014] Furthermore, the first rotating material receiving assembly includes a No. 1 linear module fixedly arranged on the first machine platform along the X direction, a No. 1 frame fixedly arranged at the output end of the No. 1 linear module, a No. 1 lifting frame fixedly arranged on the No. 1 frame, a No. 1 electric cylinder fixedly arranged on the No. 1 frame for driving the No. 1 lifting frame to lift, a No. 1 rotating platform fixedly arranged on the upper end surface of the No. 1 lifting frame, a No. 1 plate driven by the No. 1 rotating platform, and two No. 1 carriers respectively fixedly arranged at both ends of the No. 1 plate and symmetrical about the No. 1 rotating platform.

[0015] Furthermore, a transfer mechanism is also arranged between the grinding mechanism and the texturing mechanism, and the grinding mechanism, the transfer mechanism, a plurality of modifying mechanisms, a peeling test mechanism and a collecting mechanism are arranged along the X-axis direction. The transfer mechanism includes a transfer machine, a linear guide rail arranged on the transfer machine along the Y-axis direction, a slide plate slidably arranged on the linear guide rail, a No. 2 linear module fixedly arranged on the transfer machine for driving the slide plate to slide along the linear guide rail, a No. 2 lifting frame slidably arranged on the slide plate, a No. 2 cylinder fixedly arranged on the slide plate for driving the No. 2 lifting frame to lift, a No. 2 rotating platform arranged at the upper end of the No. 2 lifting frame, and a No. 2 material receiving plate driven by the No. 2 rotating platform, and both ends of the No. 2 material receiving plate are provided with No. 2 material receiving positions symmetrical about the No. 2 rotating platform.

[0016] The method for laser stripping of silicon carbide ingots uses a silicon carbide ingot laser stripping device, and comprises the following steps:

[0017] S1. Roughly grinding, fine grinding and cleaning the ingot by using a grinding mechanism;

[0018] S2, using a texturing mechanism to texturize the crystal ingot processed by the grinding mechanism;

[0019] S3, modifying the textured ingot by using a modification mechanism; identifying concentration spots on the modified ingot, and performing additional modification on the identified concentration spot areas;

[0020] S4, using a peeling test mechanism to peel the modified ingot and the wafer, and determining whether the wafer and the ingot are peeled successfully during the peeling process;

[0021] S5. If the ingot stripping is successful, the stripped wafers are collected into a collection mechanism, and the remaining ingots repeat the above steps S1 to S4; if the wafer stripping is unsuccessful, the ingots are collected separately for subsequent manual processing.

[0022] Beneficial effects of the invention:

[0023] 1. The rough grinding and fine grinding of the crystal ingot by the grinding mechanism can ensure the plane accuracy of the crystal ingot. The crystal ingot is first roughened and then modified by the modification mechanism, so that the modified layer is subjected to multiple pulse laser scanning and focusing molding, which can effectively ensure that the modified points and the modified cracks produced by the modification are effectively connected to form a surface for easy peeling; the roughening point blocks the downward extension of the modified cracks during multiple modification processes, thereby effectively controlling the thickness of the final modified layer, which can effectively reduce the loss of the crystal ingot, improve cutting efficiency and reduce material waste; the wafer is adsorbed by the peeling test mechanism and then moved horizontally for peeling, which can not only detect the unpeeled wafers, but also ensure that the unpeeled wafers will not be damaged.

[0024] 2. By using the adsorption test component to absorb the wafer and then move it horizontally for peeling, it can not only detect the unpeeled wafers, but also ensure that the unpeeled wafers will not be damaged. By using the vacuum suction cup to absorb the wafer and then move it horizontally for peeling, it can be ensured that in the case of wafer peeling failure, there is a vacuum leak between the vacuum suction cup and the wafer when the vacuum suction cup moves, which can not only effectively detect the peeling effect, but also avoid damage to the wafer.

[0025] 3. The number of modification mechanisms and the coordinated working mode of each modification mechanism can realize the modification of the ingot one by one. Compared with one-time modification, the modified points and modified cracks can be connected into a surface, reducing the connection force between the chip and the ingot, thereby reducing the probability of chip breakage or fragmentation during peeling, which can effectively reduce the ingot loss. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is an overall schematic diagram of a silicon carbide ingot laser stripping device provided in an embodiment of the present application.

[0027] Figure 2 A schematic diagram of a stripping test mechanism of a silicon carbide ingot laser stripping equipment provided in an embodiment of the present application.

[0028] Figure 3 A schematic diagram of a mounting plate, an adsorption test assembly, and an ultrasonic generator assembly of a stripping test mechanism of a silicon carbide ingot laser stripping equipment provided in an embodiment of the present application.

[0029] Figure 4 A schematic diagram of the grinding mechanism of the silicon carbide ingot laser peeling equipment provided in an embodiment of the present application.

[0030] Figure 5 A schematic diagram of a transfer mechanism of a silicon carbide ingot laser stripping device provided in an embodiment of the present application.

[0031] Figure 6 A schematic diagram showing one perspective of a texturing mechanism of a silicon carbide ingot laser lift-off device provided in an embodiment of the present application.

[0032] Figure 7 This is a schematic diagram from another perspective of the texturing mechanism of the silicon carbide ingot laser stripping equipment provided in an embodiment of the present application.

[0033] Figure 8 This is a schematic diagram from one perspective of the modification mechanism of the silicon carbide ingot laser stripping equipment provided in an embodiment of the present application.

[0034] Fig. 9This is a schematic diagram from another perspective of the modification mechanism of the silicon carbide ingot laser stripping equipment provided in an embodiment of the present application.

[0035] Fig.10 A schematic diagram of a collection mechanism of a silicon carbide ingot laser stripping device provided in an embodiment of the present application.

[0036] Fig.11 A schematic diagram of a first rotating material receiving assembly of a silicon carbide ingot laser stripping apparatus provided in an embodiment of the present application.

[0037] Fig.12 A schematic diagram of a silicon carbide ingot in a cutting state used in the silicon carbide ingot laser stripping equipment provided in an embodiment of the present application.

[0038] Fig.13 A schematic diagram of a stripping surface of a silicon carbide ingot stripped by a laser stripping device for stripping a silicon carbide ingot provided by an embodiment of the present application and a stripping surface of a silicon carbide ingot stripped by a laser stripping device for stripping a silicon carbide ingot provided by an embodiment of the present application not being applied.

[0039] The markings in the figure are: 1. Grinding mechanism; 2. Transfer mechanism; 3. Roughing mechanism; 4. Modification mechanism; 6. Peeling test mechanism; 5. Collection mechanism; 61. First machine; 62. Water tank; 63. First rotary material receiving assembly; 64. Transfer test assembly; 65. Vacuum carrier; 641. Three-axis module; 642. Mounting plate; 643. First clamping jaw assembly; 644. Ultrasonic generator assembly; 645. Adsorption test assembly; 601. Cylinder A No. 1; 602. Vacuum suction cup; 603. Cylinder B No. 1; 604. Ultrasonic transducer; 11. Machine No. 1; 12. No. 3 handling robot; 13, coarse grinding station; 14, fine grinding station; 15, cleaning and drying station; 16, loading platform; 17, unloading platform; 31, No. 3 machine; 32, No. 3 XY dual-axis mobile platform; 33, No. 3 platform; 34, No. 3 bracket; 35, No. 3 ingot suction and placement component; 36, No. 3 material receiving component; 37, No. 3 laser irradiation unit; 371, No. 3 laser; 372, No. 3 upper optical box; 373, No. 3 lower optical box; 374, No. 3 laser irradiation objective lens; 375, No. 3 displacement sensor; 41, No. 4 machine; 42, No. 4 XY dual-axis mobile platform 43, stage No. 4; 44, bracket No. 4; 45, ingot suction and placement assembly No. 4; 46, material receiving assembly No. 4; 47, laser irradiation unit No. 4; 471, laser No. 4; 472, upper optical box No. 4; 473, lower optical box No. 4; 474, laser irradiation objective lens No. 4; 475, displacement sensor No. 4; 48, camera; 49, light source; 351, mounting frame No. 3; 352, electric cylinder No. 3; 353, rotating platform A No. 3; 354, rotating plate; 355, clamping claw No. 3; 361, linear module No. 3; 362, frame No. 3; 363, lifting frame No. 3; 364, cylinder No. 3; 365, rotating platform No. 3 B; 366, receiving platform No. 3; 51, machine No. 8; 52, material rack; 53, wafer transfer assembly; 54, ingot transfer assembly; 21, transfer machine; 22, linear guide rail; 23, slide plate; 24, linear module No. 2; 25, lifting frame No. 2; 26, cylinder No. 2; 27, rotating platform No. 2; 28, receiving plate No. 2; 631, linear module No. 1; 632, frame No. 1; 633, lifting frame No. 1; 634, electric cylinder No. 1; 635, rotating platform No. 1; 636, plate No. 1; 637, carrier No. 1. DETAILED DESCRIPTION

[0040] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0041] like Figure 1As shown, the present application provides a first embodiment, which is a silicon carbide ingot laser stripping device, and its structure includes a grinding mechanism 1, a texturing mechanism 3, at least two modifying mechanisms 4, a stripping test mechanism 6 and a collecting mechanism 5. The grinding mechanism 1 is used for rough grinding and fine grinding of the ingot, the texturing mechanism 3 is used for texturing the ingot, the modifying mechanism 4 is used for modifying the textured ingot, and the stripping test mechanism 6 is used for stripping and stripping test of the modified wafer. The collecting mechanism 5 is used for collecting wafers.

[0042] It should be noted that the material loss caused by the laser stripping technology to complete the slicing of SiC ingots mainly includes: the loss of the modified layer composed of modified points and cracks, the loss caused by the depth offset of the modified points, and the loss caused by the subsequent grinding of the wafers and ingots. In order to ensure the quality requirements such as the warpage of the wafer, the subsequent grinding amount of the wafers and ingots is sufficient and quantitative. Therefore, how to form a modified layer with small thickness, high flatness and smoothness is particularly important to reduce material loss. In the process of producing conductive ingots, the temperature field is uneven, resulting in uneven nitrogen doping and concentration spots. The high concentration of nitrogen doping will increase the absorption of the laser, so the laser energy at the focus is reduced, and the modification effect is correspondingly reduced. Therefore, for ingots with concentration spots, controlling the loss of the modified layer while ensuring effective stripping has become one of the challenges of laser modification and stripping.

[0043] In actual use, the ingot is subjected to rough grinding and fine grinding by the grinding mechanism 1, such as Fig.12 As shown, the texturing mechanism 3 texturizes the crystal ingot after being ground by the grinding mechanism 1, so that a texturizing point is formed inside the crystal ingot, and a texturizing layer is formed. Then, a plurality of modifying mechanisms 4 modify the texturized crystal ingot, and a modified layer is formed above the texturizing point. The modified layer stops when it extends to the texturizing point, and the concentration spot of the modified crystal ingot is identified, and the identified concentration spot area is supplemented and modified. Then, the stripping test mechanism 6 strips the modified crystal ingot along the modified layer, and the stripped crystal is a wafer. Then, the collection mechanism 5 collects the wafer, and the remaining crystal ingot is returned to the grinding mechanism 1, and the above grinding, texturizing, modification, and stripping test processes are repeated.

[0044] LTV / um TTV / um BOW / um Warp / um Hairless 20 40 120 200 Hairy 10 25 80 120

[0045] Among them, LTV stands for total thickness deviation, TTV stands for local thickness deviation, BOW stands for bending, and Warp stands for warpage. Fig.13 Figure a shows the peeling surface of the ingot that is directly subjected to reforming and peeling without using the texturing mechanism of the present application. Fig.13 Figure b shows the peeling surface of the ingot after being processed by the texturing mechanism 3 of the present application and then subjected to reforming and peeling. Fig.13Combined with the above table, it can be seen that the surface roughness of the peeling surface of the crystal ingot treated with the texturing mechanism 3 of the present application and then subjected to modified peeling is much lower than the surface roughness of the peeling surface of the crystal ingot that is not treated with the texturing mechanism of the present application but is directly subjected to modified peeling, and the overall flatness of the peeling surface is higher, indicating that the crystal ingot treated with the texturing mechanism 3 of the present application can reduce the downward extension of cracks during the modification process, reduce the thickness of the modified layer, and make the utilization rate of the crystal ingot higher.

[0046] In the above design, the crystal ingot is coarsely ground and finely ground by the grinding mechanism 1, so that the plane accuracy of the crystal ingot can be guaranteed. The crystal ingot is first roughened and then modified by the modifying mechanism 4, so that the modified layer is subjected to multiple pulse laser scanning and focusing forming, which can effectively ensure that the modified points and the modified cracks produced by the modification are effectively connected to form a surface for easy peeling; the roughening points block the downward extension of the modified cracks during multiple modification processes, thereby effectively controlling the thickness of the final modified layer, which can effectively reduce the loss of the crystal ingot, improve cutting efficiency and reduce material waste; the wafer is adsorbed by the peeling test mechanism 6 and then moved laterally for peeling, which can not only detect the unpeeled wafers, but also ensure that the unpeeled wafers will not be damaged.

[0047] Specifically: Figure 2 and Figure 3 As shown, the peeling test mechanism 6 includes a first machine 61, a water tank 62 arranged on the first machine 61, a first rotating material receiving assembly 63 arranged on the first machine 61, a transfer test assembly 64 arranged on the first machine 61 and a vacuum carrier 65 arranged on the water tank 62. The transfer test assembly 64 includes a three-axis module 641 arranged on the first machine 61, a mounting plate 642 driven by the three-axis module 641, a first clamping jaw assembly 643 arranged on the mounting plate 642, an ultrasonic generator assembly 644 and an adsorption test assembly 645. The ultrasonic generator assembly 644 and the adsorption test assembly 645 can be simultaneously extended into the water tank 62. The adsorption test component 645 includes a No. 1 cylinder A601 fixedly arranged on the mounting plate 642 along the Z-axis direction with the output end facing downward, and a vacuum suction cup 602 fixedly arranged at the output end of the No. 1 cylinder A601, and the vacuum suction cup 602 can be extended into the water tank 62. The ultrasonic generator component 644 includes a No. 1 cylinder B603 fixedly arranged on the mounting plate 642 along the Z-axis direction with the output end facing downward, and an ultrasonic transducer 604 fixedly arranged at the output end of the No. 1 cylinder B603, and both the ultrasonic transducer 604 and the vacuum suction cup 602 can be extended into the water tank 62.

[0048] In actual use, the modified ingot is received by the first rotating material receiving assembly 63, and then the first clamping jaw assembly 643 is driven by the three-axis module 641 to clamp the ingot and place it in the water tank 62 to ensure that the ingot is below the liquid level. Then the first clamping jaw assembly 643 is separated from the ingot, and the adsorption test assembly 645 adsorbs the ingot from above, and the ultrasonic generator assembly 644 extends below the liquid level to provide ultrasonic waves, and the modified layer is peeled off by ultrasonic waves, so that the original ingot is peeled off to form an ingot and a wafer. Then the three-axis module 641 drives the adsorption test assembly 645 to absorb the wafer and move it in the horizontal direction. If the peeling is successful, the adsorption test assembly 645 will successfully transfer the wafer to the first rotating material receiving assembly 63 under the drive of the three-axis module 641, and there will be no vacuum leakage between the adsorption test assembly 645 and the wafer; if the peeling is unsuccessful, the adsorption test assembly 645 will leak vacuum between the adsorption test assembly 645 and the wafer under the drive of the three-axis module 641, so that the wafer will not move further with the adsorption test assembly 645. The specific actions of the adsorption test component 645 and the ultrasonic generator component 644 are as follows: the ingot is located in the water tank 62 and below the liquid level, the No. 1 cylinder A601 drives the vacuum suction cup 602 to adsorb from the upper end surface of the ingot, the No. 1 cylinder B603 drives the ultrasonic transducer 604 to penetrate below the liquid level, and the ultrasonic wave of the ultrasonic transducer 604 is used to separate the modified layer of the ingot, and then the three-axis module 641 drives the adsorption test component 645 and the ultrasonic generator component 644 to move horizontally. If the peeling is successful, there is no vacuum leakage between the suction cup and the wafer, and the wafer can be driven to separate from the remaining ingot. If the peeling is unsuccessful, the connection force between the wafer and the ingot is greater than the adsorption force of the suction cup, and the suction cup will leak vacuum between the wafer when moving, so that the wafer is completely retained on the ingot.

[0049] In the above design, the wafer is adsorbed by the adsorption test component 645 and then moved horizontally for peeling, which can not only detect the unpeeled wafer, but also ensure that the unpeeled wafer will not be damaged. The vacuum suction cup 602 is used to absorb the wafer and then move it horizontally for peeling, which can ensure that in the case of wafer peeling failure, there is a vacuum leak between the vacuum suction cup 602 and the wafer when the vacuum suction cup 602 moves, which can not only effectively detect the peeling effect, but also avoid damage to the wafer.

[0050] Specifically: Figure 4As shown, the grinding mechanism 1 includes a machine No. 11, a transport robot No. 12 arranged on the machine No. 11, a coarse grinding station 13 arranged on the machine No. 11, a fine grinding station 14 arranged on the machine No. 11, a cleaning and drying station 15 arranged on the machine No. 11, a loading platform 16 and a unloading platform 17 arranged on the machine No. 11, and the transport robot No. 12 is used to transfer the ingot between the loading platform 16, the coarse grinding station 13, the fine grinding station 14, the cleaning and drying station 15 and the unloading platform 17.

[0051] In actual use, the initial crystal ingot is first placed on the loading platform 16, and then the initial crystal ingot is transferred to the rough grinding station 13 for rough grinding by the No. 1 handling robot 12, and then the rough ground crystal ingot is transported to the fine grinding station 14 for fine grinding by the No. 1 handling robot 12, and then the No. 1 handling robot 12 transfers the finely ground crystal ingot to the cleaning and drying station 15 for cleaning and drying, and then the No. 1 handling robot 12 transfers the cleaned and dried crystal ingot to the unloading platform 17.

[0052] In the above design, the grinding mechanism 1 performs rough grinding and fine grinding on the crystal ingot, which can effectively make the planarity of the crystal ingot more precise.

[0053] Specifically: Figure 7 and Figure 6 As shown, the texturing mechanism 3 includes a No. 3 machine 31, a No. 3 XY two-axis moving platform 32 arranged on the No. 3 machine 31, a No. 3 carrier 33 driven by the No. 3 XY two-axis moving platform 32, a No. 3 bracket 34 arranged on the No. 3 machine 31, a No. 3 material receiving assembly 36 arranged on the No. 3 machine 31, a No. 3 crystal ingot suction and release assembly 35 arranged on the No. 3 bracket 34, and a No. 3 laser irradiation unit 37 arranged on the No. 3 bracket 34. The No. 3 laser irradiation unit 37 includes a No. 3 laser 371 arranged on the No. 3 bracket 34, a No. 3 upper optical box 372, a No. 3 lower optical box 373, a No. 3 laser irradiation objective lens 374 arranged on the No. 3 lower optical box 373, and a No. 3 displacement sensor 375.

[0054] In actual use, the No. 3 material receiving component 36 receives the ground ingot, and then the No. 3 ingot suction and release component 35 transfers the ingot to the No. 3 carrier 33. The ingot is fixed on the No. 3 carrier 33, and the No. 3 XY dual-axis moving platform 32 drives the No. 3 carrier 33 to move along the XY direction, so that the ingot is within the working range of the No. 3 laser irradiation unit 37. Then the No. 3 laser irradiation unit 37 works, so that after the No. 3 laser 371 emits a pulsed laser, it sequentially passes through the No. 3 upper optical box 372, the No. 3 lower optical box 373 and the No. 3 laser irradiation objective lens 374 through the surface of the ingot and focuses on the inside of the ingot. The No. 3 displacement sensor 375 senses the distance between the No. 3 laser irradiation objective lens 374 and the upper end face of the ingot in real time. At the same time, the No. 3 XY dual-axis moving platform 32 drives the No. 3 carrier 33 to feed the ingot, so that the pulsed laser beam forms fine cracks inside the ingot and below the modified layer to achieve roughening.

[0055] In the above design, the structural design and specific implementation method of the texturing mechanism 3 can achieve texturing modification of the crystal ingot.

[0056] Specifically: Figure 8 and Fig. 9 As shown, the number of the modification mechanisms 4 is three, and the modification mechanisms 4 include a No. 4 machine 41, a No. 4 XY two-axis moving platform 42 arranged on the No. 4 machine 41, a No. 4 carrier 43 driven by the No. 4 XY two-axis moving platform 42, a No. 4 bracket 44 arranged on the No. 4 machine 41, a No. 4 crystal ingot suction and placement assembly 45 arranged on the No. 4 bracket 44, a No. 4 material receiving assembly 46 arranged on the No. 4 machine 41, a light source 49 arranged on the No. 4 bracket 44, and a camera 48 arranged on the No. 4 bracket 44. And a No. 4 laser irradiation unit 47 arranged on the No. 4 bracket 44, the No. 4 laser irradiation unit 47 includes a No. 4 laser 471 arranged on the No. 4 bracket 44, a No. 4 upper optical box 472, a No. 4 lower optical box 473, a No. 4 laser irradiation objective lens 474 arranged on the No. 4 lower optical box 473, and a No. 4 displacement sensor 475; the No. 3 laser irradiation unit 37 is the same as the No. 4 laser irradiation unit 47, and the No. 4 laser irradiation unit 47 at least includes an optical path module and a real-time focusing module.

[0057] In actual use, the power of the fourth laser 471 of the modification mechanism 4 is greater than the third laser 371 of the texturing mechanism 3. The fourth laser 471 with greater power is used to ensure that the focal position of the pulse laser emitted by the fourth laser 471 acting on the crystal ingot needs to be higher than the focal position of the pulse laser emitted by the third laser 371 acting on the crystal ingot, thereby blocking the downward extension of the modified crack through the texturing point. The three modification mechanisms 4 have the same structure and the same working principle. The same modification mechanism 4 can be used to modify the same crystal ingot multiple times to achieve parallel synchronous processing of multiple crystal ingots; the same crystal ingot can also be modified by three modification mechanisms 4 in sequence: that is, the first modification mechanism 4 is used to perform the first scan on the crystal ingot after texturing to achieve the first modification; the second modification mechanism 4 is used to perform the second scan on the crystal ingot modified by the first modification mechanism 4 to achieve the second modification; the third modification mechanism 4 is used to perform the third scan on the crystal ingot modified by the second modification mechanism 4, and finally form a modified layer. The working principle of the reforming mechanism 4 is as follows: the No. 4 receiving component 46 receives the ground ingot, and then the No. 4 ingot suction and placement component 45 transfers the ingot to the No. 4 carrier 43. The ingot is fixed on the No. 4 carrier 43, and the No. 4 XY dual-axis moving platform 42 drives the No. 4 carrier 43 to move along the XY direction, so that the ingot is within the working range of the No. 4 laser irradiation unit 47. Then the No. 4 laser irradiation unit 47 transmits the pulsed laser beam through the surface of the ingot and focuses it inside the ingot. At the same time, the No. 4 XY dual-axis moving platform 42 drives the No. 4 carrier 43 to feed the ingot, and the real-time focusing method is used to ensure the parallelism of the focal depth and the surface of the ingot. The real-time focusing module consists of a high-precision laser rangefinder and a high-sensitivity piezoelectric ceramic motor (not shown in the figure), the objective lens is installed below the piezoelectric ceramic motor, and the laser rangefinder is installed on one side of the objective lens. During the scanning process, the rangefinder first measures the height of the ingot surface, and the piezoelectric ceramic motor compensates in the Z direction according to this height data, thereby realizing real-time focusing of the laser focus. This method requires precise control of the response time of the piezoelectric ceramic motor according to the distance between the rangefinder and the objective lens and the scanning speed to ensure that the measurement position of the rangefinder is as consistent as possible with the scanning position of the laser beam, so that the pulsed laser beam forms a flat modified layer inside the ingot to achieve modification. After modification, the concentration spots on the surface of the ingot are identified by camera 48. The concentration spot area is automatically calibrated and the relevant coordinates are extracted, and then the concentration spot area is modified and re-scanned. In order to further improve efficiency, specific optimization parameters can also be used, such as increasing power, increasing pulse frequency, etc. for re-scanning and modification. With the improvement of crystal growth technology, the probability of concentration spots will gradually decrease, the area of ​​the concentration spot area will become smaller and smaller, and the modification re-scanning time will become shorter and shorter, which can even be negligible compared with the whole surface re-scanning, thereby greatly improving production efficiency.

[0058] In the above design, the number of modification mechanisms 4 and the coordinated working mode of each modification mechanism 4 can realize the modification of the ingot one by one. Compared with one-time modification, the modified points and modified cracks can be connected into a surface, thereby reducing the connection force between the chip and the ingot, thereby reducing the probability of chip breakage or fragmentation during peeling, and can effectively reduce the ingot loss.

[0059] Specifically: Figure 6 As shown, the No. 3 crystal ingot suction and placement component 35 and the No. 4 crystal ingot suction and placement component 45 have the same structure. The No. 3 crystal ingot suction and placement component 35 includes a No. 3 mounting frame 351 arranged on a No. 3 bracket 34, a No. 3 electric cylinder 352 fixedly arranged on the No. 3 mounting frame 351 along the Z-axis direction with the output end downward, a No. 3 rotating platform A353 arranged at the output end of the No. 3 electric cylinder 352, a rotating plate 354 driven by the No. 3 rotating platform A353, and two No. 3 clamps 355 arranged at both ends of the rotating plate 354 and symmetrical about the No. 3 rotating platform A353. The No. 3 material receiving component 36 and the No. 4 material receiving component 46 have the same structure. The No. 3 material receiving component 36 includes a No. 3 mounting frame 351 arranged along the X-axis direction. The No. 3 linear module 361 on the No. 3 machine platform 31, the No. 3 frame 362 fixedly arranged at the output end of the No. 3 linear module 361, the No. 3 lifting frame 363 fixedly arranged on the No. 3 frame 362, the No. 3 cylinder 364 arranged on the No. 3 frame 362 for driving the No. 3 lifting frame 363 to rise and fall, the No. 3 rotating platform B365 arranged on the No. 3 lifting frame 363, and the No. 3 material receiving platform 366 driven by the No. 3 rotating platform B365, a No. 3 material receiving position is respectively arranged at both ends of the No. 3 material receiving platform 366, and the two No. 3 material receiving positions are symmetrical about the No. 3 rotating platform B365, and one of the No. 3 material receiving positions can correspond to one of the No. 3 clamps 355 up and down.

[0060] In actual use, the working principle of the No. 3 crystal ingot suction and placement component 35 and the No. 3 material receiving component 36 is as follows: the crystal ingot is received through one of the No. 3 material receiving positions, and then the No. 3 linear module 361 drives the No. 3 frame 362 to move, so that the crystal ingot corresponds to one of the No. 3 clamps 355, and then the No. 3 electric cylinder 352 drives the No. 3 rotating platform A353 to move down, and the No. 3 air cylinder 364 drives the No. 3 rotating platform B365 to move up, so that the No. 3 clamp 355 grabs the crystal ingot, and then the No. 3 electric cylinder 352 and the No. 3 air cylinder 364 are pressed together. Position, then No. 3 rotating platform A353 drives the turn plate 354 to rotate 180°, and No. 3 rotating platform B365 drives No. 3 receiving platform 366 to rotate 180°, so that another No. 3 clamp 355 corresponds to another No. 3 receiving position up and down, and then No. 3 electric cylinder 352 drives rotating platform A to move downward, and No. 3 air cylinder 364 drives No. 3 rotating platform B365 to move upward, so that one of the No. 3 clamps 355 places the grabbed ingot on No. 3 carrier 33, and the other No. 3 clamp 355 clamps the ingot at the No. 3 receiving position.

[0061] In the above design, the structural design and specific implementation method of the No. 3 crystal ingot suction and placement assembly 35 and the No. 3 material receiving assembly 36 can effectively realize the alternating taking and placing of crystal ingots, effectively improving the work efficiency.

[0062] Specifically: Fig.10 As shown, the collecting mechanism 5 includes a No. 8 machine 51 , a material rack 52 arranged on the No. 8 machine 51 , a wafer transfer assembly 53 and a crystal ingot transfer assembly 54 arranged on the No. 8 machine 51 and located between the material rack 52 and the water tank 62 .

[0063] In actual use, the wafers in the first rotating material receiving assembly 63 are transferred to the material rack 52 through the wafer transfer assembly 53, and the ingots in the water tank 62 are transferred to the external circulation line through the ingot transfer assembly 54.

[0064] In the above design, the structural design and specific implementation method of the collecting mechanism 5 can effectively realize the rapid transfer of the stripped ingots and wafers.

[0065] Specifically: Fig.11 As shown, the first rotating material receiving assembly 63 includes a No. 1 linear module 631 fixedly arranged on the first machine table 61 along the X direction, a No. 1 frame 632 fixedly arranged at the output end of the No. 1 linear module 631, a No. 1 lifting frame 633 fixedly arranged on the No. 1 frame 632, a No. 1 electric cylinder 634 fixedly arranged on the No. 1 frame 632 for driving the No. 1 lifting frame 633 to move up and down, a No. 1 rotating platform 635 fixedly arranged on the upper end surface of the No. 1 lifting frame 633, a No. 1 plate 636 driven by the No. 1 rotating platform 635, and two No. 1 carriers 637 respectively fixedly arranged at both ends of the No. 1 plate 636 and symmetrical about the No. 1 rotating platform 635.

[0066] In actual use, the No. 1 linear module 631 drives the No. 1 frame 632 to move along the X direction, so that the No. 1 lifting frame 633 moves to a predetermined position, and then the No. 1 electric cylinder 634 drives the No. 1 lifting frame 633 to rise or fall, and the No. 1 rotating platform 635 drives the No. 1 plate 636 to rotate 180°, so that the two No. 1 carriers 637 receive the wafer and the ingot respectively.

[0067] In the above design, the structural design and specific implementation of the first rotating material receiving assembly 63 can effectively receive the ingots and wafers.

[0068] Specifically: Figure 1 and Figure 5As shown, a transfer mechanism 2 is also arranged between the grinding mechanism 1 and the texturing mechanism 3. The grinding mechanism 1, the transfer mechanism 2, a plurality of modification mechanisms 4, the peeling test mechanism 6 and the collecting mechanism 5 are arranged along the X-axis direction. The transfer mechanism 2 includes a transfer machine 21, a linear guide rail 22 arranged on the transfer machine 21 along the Y-axis direction, a slide plate 23 slidably arranged on the linear guide rail 22, a No. 2 linear module 24 fixedly arranged on the transfer machine 21 for driving the slide plate 23 to slide along the linear guide rail 22, a No. 2 lifting frame 25 slidably arranged on the slide plate 23, a No. 2 cylinder 26 fixedly arranged on the slide plate 23 for driving the No. 2 lifting frame 25 to rise and fall, a No. 2 rotating platform 27 arranged at the upper end of the No. 2 lifting frame 25, and a No. 2 material receiving plate 28 driven by the No. 2 rotating platform 27, and No. 2 material receiving positions symmetrical about the No. 2 rotating platform 27 are arranged at both ends of the No. 2 material receiving plate 28.

[0069] In actual use, the ground ingot is transferred through the transfer mechanism 2. Specifically, the second linear module 24 drives the slide plate 23 to slide along the linear guide rail 22, driving the second lifting frame 25 to move to a predetermined position, and then the second cylinder 26 drives the second lifting frame 25 to rise and fall, and the second rotating platform 27 drives the second receiving plate 28 to rotate, so that the second receiving plate 28 receives or feeds the material.

[0070] In the above design, the structural design and specific implementation method of the transfer mechanism 2 can effectively realize the transfer of the crystal ingot.

[0071] The method for laser stripping of silicon carbide ingots uses a silicon carbide ingot laser stripping device, and comprises the following steps:

[0072] S1, using a grinding mechanism 1 to perform rough grinding and fine grinding on the ingot;

[0073] S2, using the texturing mechanism 3 to texturize the crystal ingot processed by the grinding mechanism 1;

[0074] S3, modifying the textured ingot using a modifying mechanism 4;

[0075] S4. The modified ingot is peeled by the peeling test mechanism 6. During the peeling, the wafer after the action of the ultrasonic generator component 644 is vacuum-adsorbed by the adsorption test component 645 and moved radially. If the adsorption test component 645 and the wafer produce vacuum leakage during the movement, the wafer peeling is judged to be unqualified, and the ingot needs to be collected separately for subsequent manual processing. If the adsorption test component 645 and the wafer do not produce vacuum leakage during the movement, the wafer peeling is judged to be qualified, and the peeled wafer is placed in the collection mechanism 5, and then the remaining ingot is returned to the grinding mechanism 1 for grinding.

[0076] In the above design, by vacuum adsorbing the wafer and then applying a horizontal movement force, it is determined whether vacuum leakage will occur between the adsorption test component 645 and the wafer. This can avoid the problem of stress concentration when the adsorption test component 645 vertically lifts the wafer, causing the wafer that has not been successfully peeled to break, thereby effectively improving the utilization rate of raw materials.

[0077] To further explain in detail, it should be understood that the above is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. Silicon carbide ingot laser stripping equipment, characterized by: The invention comprises a grinding mechanism (1), a texturing mechanism (3), at least two modifying mechanisms (4), a stripping test mechanism (6) and a collecting mechanism (5), wherein the grinding mechanism (1) is used for rough grinding and fine grinding of a crystal ingot, the texturing mechanism (3) is used for texturing the crystal ingot, the modifying mechanism (4) is used for modifying the textured crystal ingot, the stripping test mechanism (6) is used for stripping and stripping test of the modified wafer, and the collecting mechanism (5) is used for collecting the wafer; the texturing mechanism (3) comprises a No. 3 machine platform (31), a No. 3 XY dual-axis movable platform (32) arranged on the No. 3 machine platform (31), a No. 3 XY dual-axis movable platform (32) controlled by the No. 3 XY dual-axis movable platform A No. 3 carrier (33) driven by a platform (32), a No. 3 bracket (34) arranged on the No. 3 machine platform (31), a No. 3 material receiving assembly (36) arranged on the No. 3 machine platform (31), a No. 3 crystal ingot suction and placement assembly (35) arranged on the No. 3 bracket (34), and a No. 3 laser irradiation unit (37) arranged on the No. 3 bracket (34), wherein the No. 3 laser irradiation unit (37) comprises a No. 3 laser (371) arranged on the No. 3 bracket (34), a No. 3 upper optical box (372), a No. 3 lower optical box (373), a No. 3 laser irradiation objective lens (374) arranged on the No. 3 lower optical box (373), and a No. 3 displacement sensor (375); The peeling test mechanism (6) comprises a first machine platform (61), a water tank (62) arranged on the first machine platform (61), a first rotating material receiving assembly (63) arranged on the first machine platform (61), a transfer test assembly (64) arranged on the first machine platform (61), and a vacuum carrier (65) arranged on the water tank (62); the transfer test assembly (64) comprises a three-axis module (641) arranged on the first machine platform (61), a mounting plate (642) driven by the three-axis module (641), a first clamping jaw assembly (643) arranged on the mounting plate (642), an ultrasonic generator assembly (644), and an adsorption test assembly (645); the ultrasonic generator assembly (644) and the adsorption test assembly (645) are connected to each other. The components (645) can be extended into the water tank (62) at the same time. The adsorption test component (645) includes a No. 1 cylinder A (601) fixedly arranged on the mounting plate (642) along the Z-axis direction and with the output end facing downward, and a vacuum suction cup (602) fixedly arranged at the output end of the No. 1 cylinder A (601). The vacuum suction cup (602) can be extended into the water tank (62). The ultrasonic generator component (644) includes a No. 1 cylinder B (603) fixedly arranged on the mounting plate (642) along the Z-axis direction and with the output end facing downward, and an ultrasonic transducer (604) fixedly arranged at the output end of the No. 1 cylinder B (603). Both the ultrasonic transducer (604) and the vacuum suction cup (602) can be extended into the water tank (62). The grinding mechanism (1) comprises a No. 1 machine (11), a No. 1 handling robot (12) arranged on the No. 1 machine (11), a rough grinding station (13) arranged on the No. 1 machine (11), a fine grinding station (14) arranged on the No. 1 machine (11), a cleaning and drying station (15) arranged on the No. 1 machine (11), a loading platform (16) and a unloading platform (17) arranged on the No. 1 machine (11), wherein the No. 1 handling robot (12) is used to transfer the crystal ingot between the loading platform (16), the rough grinding station (13), the fine grinding station (14), the cleaning and drying station (15) and the unloading platform (17).

2. The silicon carbide ingot laser lift-off device according to claim 1, characterized in that: The number of the modification mechanisms (4) is three. The modification mechanisms (4) include a fourth machine platform (41), a fourth XY dual-axis movable platform (42) arranged on the fourth machine platform (41), a fourth carrier (43) driven by the fourth XY dual-axis movable platform (42), a fourth support (44) arranged on the fourth machine platform (41), a fourth crystal ingot suction and placement assembly (45) arranged on the fourth support (44), a fourth material receiving assembly (46) arranged on the fourth machine platform (41), a light source (49) arranged on the fourth support (44), and a camera (43) arranged on the fourth support (44). 8) and a No. 4 laser irradiation unit (47) arranged on the No. 4 bracket (44), the No. 4 laser irradiation unit (47) comprising a No. 4 laser (471) arranged on the No. 4 bracket (44), a No. 4 upper optical box (472), a No. 4 lower optical box (473), a No. 4 laser irradiation objective lens (474) arranged on the No. 4 lower optical box (473), and a No. 4 displacement sensor (475); the No. 3 laser irradiation unit (37) is the same as the No. 4 laser irradiation unit (47), and the No. 4 laser irradiation unit (47) at least comprises an optical path module and a real-time focusing module.

3. The silicon carbide ingot laser lift-off device according to claim 2, characterized in that: The No. 3 crystal ingot suction and placement component (35) and the No. 4 crystal ingot suction and placement component (45) have the same structure. The No. 3 crystal ingot suction and placement component (35) includes a No. 3 mounting frame (351) arranged on a No. 3 bracket (34), a No. 3 electric cylinder (352) fixedly arranged on the No. 3 mounting frame (351) along the Z-axis direction with the output end facing downward, a No. 3 rotating platform A (353) arranged at the output end of the No. 3 electric cylinder (352), a rotating plate (354) driven by the No. 3 rotating platform A (353), and two No. 3 clamps (355) arranged at both ends of the rotating plate (354) and symmetrical about the No. 3 rotating platform A (353). The No. 3 material receiving component (36) and the No. 4 material receiving component (46) have the same structure. The No. 3 material receiving component (36) includes a No. 3 mounting frame (351) arranged along the X-axis direction. A No. 3 linear module (361) on the No. 3 machine platform (31), a No. 3 frame (362) fixedly arranged at the output end of the No. 3 linear module (361), a No. 3 lifting frame (363) fixedly arranged on the No. 3 frame (362), a No. 3 cylinder (364) arranged on the No. 3 frame (362) for driving the No. 3 lifting frame (363) to rise and fall, a No. 3 rotating platform B (365) arranged on the No. 3 lifting frame (363), and a No. 3 material receiving platform (366) driven by the No. 3 rotating platform B (365), wherein a No. 3 material receiving position is respectively arranged at both ends of the No. 3 material receiving platform (366), and the two No. 3 material receiving positions are symmetrical about the No. 3 rotating platform B (365), and one of the No. 3 material receiving positions can correspond to one of the No. 3 clamps (355) up and down.

4. The silicon carbide ingot laser lift-off device according to claim 1, characterized in that: The collecting mechanism (5) comprises a No. 8 machine (51), a material rack (52) arranged on the No. 8 machine (51), a wafer transfer assembly (53) and a crystal ingot transfer assembly (54) arranged on the No. 8 machine (51) and located between the material rack (52) and a water tank (62).

5. The silicon carbide ingot laser lift-off device according to claim 1, characterized in that: The first rotating material receiving assembly (63) comprises a No. 1 linear module (631) fixedly arranged on the first machine platform (61) along the X direction, a No. 1 frame (632) fixedly arranged at the output end of the No. 1 linear module (631), a No. 1 lifting frame (633) fixedly arranged on the No. 1 frame (632), a No. 1 electric cylinder (634) fixedly arranged on the No. 1 frame (632) for driving the No. 1 lifting frame (633) to move up and down, a No. 1 rotating platform (635) fixedly arranged on the upper end surface of the No. 1 lifting frame (633), a No. 1 plate (636) driven by the No. 1 rotating platform (635), and two No. 1 carriers (637) respectively fixedly arranged at two ends of the No. 1 plate (636) and symmetrical with respect to the No. 1 rotating platform (635).

6. The silicon carbide ingot laser lift-off device according to claim 1, characterized in that: A transfer mechanism (2) is further arranged between the grinding mechanism (1) and the texturing mechanism (3); the grinding mechanism (1), the transfer mechanism (2), a plurality of modification mechanisms (4), a peeling test mechanism (6) and a collecting mechanism (5) are arranged along the X-axis direction; the transfer mechanism (2) comprises a transfer platform (21), a linear guide rail (22) arranged on the transfer platform (21) along the Y-axis direction, a slide plate (23) slidably arranged on the linear guide rail (22), and a slide plate (23) fixedly arranged on the transfer platform (21) for driving the slide plate ( A second linear module (24) sliding along the linear guide rail (22), a second lifting frame (25) slidably arranged on the slide plate (23), a second cylinder (26) fixedly arranged on the slide plate (23) for driving the second lifting frame (25) to rise and fall, a second rotating platform (27) arranged at the upper end of the second lifting frame (25), and a second material receiving plate (28) driven by the second rotating platform (27), wherein both ends of the second material receiving plate (28) are provided with second material receiving positions symmetrical with respect to the second rotating platform (27).

7. A method for laser stripping of a silicon carbide ingot, using the silicon carbide ingot laser stripping device according to any one of claims 1 to 6, characterized in that: The steps include: S1, using the grinding mechanism (1) to perform rough grinding, fine grinding and cleaning on the crystal ingot; S2, using a texturing mechanism (3) to texturize the crystal ingot processed by the grinding mechanism (1); S3, using the modification mechanism (4) to modify the roughened ingot, identifying concentration spots on the modified ingot, and performing additional modification on the identified concentration spot areas; S4, using a peeling test mechanism (6) to peel the modified crystal ingot and the wafer, and determining whether the wafer and the crystal ingot are successfully peeled during the peeling process; S5. If the crystal ingot is successfully peeled off, the peeled wafers are collected into the collection mechanism (5), and the remaining crystal ingots repeat the above steps S1 to S4; if the wafer is not successfully peeled off, the crystal ingots are collected separately for subsequent manual processing.

Images