Display panel and display device

Abstract

The application discloses a display panel and a display device. The display panel comprises a pixel circuit and a light-emitting element, the pixel circuit comprises a driving transistor and a photosensitive capacitor, the photosensitive capacitor comprises a first electrode and a second electrode, the first electrode is electrically connected with the gate electrode of the driving transistor, the second electrode is electrically connected with a first signal line, the first signal line is used for transmitting a fixed voltage signal, the photosensitive capacitor has a first capacitance value under a first light intensity, the photosensitive capacitor has a second capacitance value under a second light intensity, the first light intensity is smaller than the second light intensity, and the first capacitance value is smaller than the second capacitance value. The display panel and the display device provided by the application series-connect the photosensitive capacitor between the gate electrode of the driving transistor and the first signal line for transmitting the fixed voltage signal, the capacitance value of the photosensitive capacitor increases with the increase of the external light intensity, thereby helping to keep the gate potential of the driving transistor unchanged when the external light intensity increases, and improving the problems of flashing screen and color deviation.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel and a display device. BACKGROUND

[0002] An organic light emitting diode (OLED) display panel has the advantages of high visibility, high brightness and lightness, and therefore, the application of the OLED display panel is more and more extensive.

[0003] However, the current OLED display panel has the problems of screen flashing and color deviation under sunlight. SUMMARY

[0004] The present application provides a display panel and a display device to solve the problems of screen flashing and color deviation of the display panel under sunlight.

[0005] According to an aspect of the present application, a display panel is provided, comprising a pixel circuit and a light emitting element electrically connected with the pixel circuit.

[0006] The pixel circuit comprises a driving transistor and a photosensitive capacitor.

[0007] The driving transistor is configured to provide a driving current to the light emitting element.

[0008] The photosensitive capacitor comprises a first electrode and a second electrode, the first electrode is electrically connected with the gate of the driving transistor, and the second electrode is electrically connected with a first signal line.

[0009] The first signal line is configured to transmit a first voltage signal, and the first voltage signal is a fixed voltage signal.

[0010] The photosensitive capacitor has a first capacitance value under a first light intensity, and has a second capacitance value under a second light intensity.

[0011] The first light intensity is less than the second light intensity, and the first capacitance value is less than the second capacitance value.

[0012] According to another aspect of the present application, a display device is provided, comprising the display panel of the first aspect.

[0013] The display panel and the display device provided by the embodiment of the present application have a photosensitive capacitor connected in series between the gate of the driving transistor and the first signal line for transmitting a fixed voltage signal, the photosensitive capacitor has a first capacitance value when the display panel is in a first light intensity with weak light intensity, and the photosensitive capacitor has a second capacitance value when the display panel is in a second light intensity with strong light intensity, so that the capacitance value of the photosensitive capacitor increases with the increase of the external light intensity, thereby increasing the ability of the photosensitive capacitor to maintain the gate potential of the driving transistor, helping to keep the gate potential of the driving transistor unchanged, reducing the decrease of the first frame luminance of the display panel when the display panel is irradiated by strong light, better maintaining the luminance stability of the display panel, improving the screen flickering problem, and helping to reduce the difference between the first frame luminance of different color light emitting elements after being irradiated by strong light, thereby improving the color cast phenomenon.

[0014] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present application, nor is it used to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0016] Figure 1 A structural schematic diagram of a display panel provided by the embodiment of the present application is shown in the figure.

[0017] Figure 2 A structural schematic diagram of a display panel provided by the embodiment of the present application is shown in the figure. Figure 1 A sectional structure schematic diagram along the A-A' direction is shown in the figure.

[0018] Figure 3 A structural schematic diagram of a pixel circuit provided by the embodiment of the present application is shown in the figure.

[0019] Figure 4 A partial sectional structure schematic diagram of a display panel provided by the embodiment of the present application is shown in the figure.

[0020] Figure 5 A partial sectional structure schematic diagram of another display panel provided by the embodiment of the present application is shown in the figure.

[0021] Figure 6 A partial sectional structure schematic diagram of another display panel provided by the embodiment of the present application is shown in the figure.

[0022] Figure 7A structure schematic diagram of a photosensitive capacitor provided for an embodiment of the present application is shown in the figure;

[0023] Figure 8 A structure schematic diagram of a display panel provided for an embodiment of the present application is shown in the figure; Figure 7 A structure schematic diagram of a cross section along the direction of B-B' is shown in the figure;

[0024] Figure 9 A structure schematic diagram of a display panel provided for an embodiment of the present application is shown in the figure;

[0025] Figure 10 A structure schematic diagram of a display panel provided for an embodiment of the present application is shown in the figure; Figure 9 A structure schematic diagram of a cross section along the direction of C-C' is shown in the figure;

[0026] Figure 11 A structure schematic diagram of a display panel provided for an embodiment of the present application is shown in the figure;

[0027] Figure 12 A structure schematic diagram of a display panel provided for an embodiment of the present application is shown in the figure;

[0028] Figure 13 A structure schematic diagram of a display panel provided for an embodiment of the present application is shown in the figure;

[0029] Figure 14 A structure schematic diagram of a display device provided for an embodiment of the present application is shown in the figure. DETAILED DESCRIPTION

[0030] In order to make the person skilled in the art better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by the person skilled in the art without creative labor should belong to the protection scope of the present application.

[0031] It should be noted that the terms "first", "second", and the like in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and do not have to be used to describe a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0032] Figure 1This is a schematic diagram of the structure of a display panel provided in an embodiment of the present invention. Figure 2 for Figure 1 A schematic diagram of the cross-sectional structure along the A-A' direction. Figure 3 A schematic diagram of a pixel circuit provided in an embodiment of the present invention is shown below. Figures 1-3 As shown, the display panel provided in this embodiment of the invention includes a pixel circuit 10 and a light-emitting element 11 electrically connected to the pixel circuit 10. The pixel circuit 10 includes a driving transistor M3 and a photosensitive capacitor Cst2. The driving transistor M3 is used to provide driving current to the light-emitting element 11. The photosensitive capacitor Cst2 includes a first electrode C21 and a second electrode C22. The first electrode C21 is electrically connected to the gate of the driving transistor M3, and the second electrode C22 is electrically connected to a first signal line 12. The first signal line 12 is used to transmit a first voltage signal, which is a fixed voltage signal. The photosensitive capacitor Cst2 has a first capacitance value under a first illumination intensity and a second capacitance value under a second illumination intensity. The first illumination intensity is less than the second illumination intensity, and the first capacitance value is less than the second capacitance value.

[0033] Specifically, the display panel provided in this embodiment can be an organic light-emitting diode (OLED) display panel, but is not limited to this.

[0034] Among them, such as Figures 1-3 As shown, a plurality of pixel circuits 10 are provided on the display panel. The arrangement of the pixel circuits 10 on the display panel can be an array arrangement, but is not limited to this.

[0035] The pixel circuit 10 is connected to a light-emitting element 11, such as Figure 2 As shown, taking an organic light-emitting diode (OLED) as an example, the light-emitting element 11 may include an anode layer 111, a light-emitting layer 112, and a cathode layer 113 stacked together. When electrons and holes are injected into the light-emitting layer 112 from the cathode layer 113 and the anode layer 111, respectively, excitons are formed in the light-emitting layer 112, exciting the light-emitting molecules and causing the light-emitting layer 112 to emit visible light. Different colors of visible light can be emitted by using different materials for the light-emitting layer 112.

[0036] It should be noted that the light-emitting element 11 is not limited to organic light-emitting diodes. In other embodiments, the light-emitting element 11 may also be other types of light-emitting devices, and the embodiments of the present invention do not make specific limitations on this.

[0037] Continue to refer to Figure 2Optionally, the light-emitting layers 112 of each light-emitting element 11 are spaced apart by a pixel definition layer 13, wherein the pixel definition layer 13 includes multiple openings, at least a portion of the light-emitting layers 112 are located within the openings, and the area where the openings of the pixel definition layer 13 are located is the light-emitting area of ​​the light-emitting element 11.

[0038] Furthermore, the light-emitting element 11 may include at least two light-emitting elements of different colors. For example, the light-emitting element 11 may include a red light-emitting element, a green light-emitting element, and a blue light-emitting element to achieve color image display.

[0039] The arrangement of the light-emitting elements 11 on the display panel can be an array arrangement, but is not limited to this.

[0040] Furthermore, the shape of the light-emitting area of ​​the light-emitting element 11 includes, but is not limited to, Figure 1 The rectangle shown in the figure can be used in other embodiments. The shape of the light-emitting area of ​​the light-emitting element 11 can also be designed according to actual needs. This embodiment of the invention does not specifically limit this.

[0041] Furthermore, the pixel circuit 10 is electrically connected to the light-emitting element 11. The pixel circuit 10 transmits driving current to the light-emitting element 11 under the action of signals from driving signal lines (such as scan lines, data lines, voltage signal lines, etc.) on the display panel, thereby driving the light-emitting element 11 to emit light. The light-emitting element 11 and the pixel circuit 10 electrically connected to it together constitute the sub-pixels of the display panel. Multiple sub-pixels are arranged according to a certain pattern. By precisely controlling the brightness of different sub-pixels, the display of a complete image can be achieved.

[0042] like Figure 3 As shown, the pixel circuit 10 includes a driving transistor M3. The driving transistor M3 and the light-emitting element 11 are connected in series between the first power signal line PVDD and the second power signal line PVEE. The first power signal line PVDD is used to transmit the first power supply voltage, and the second power signal line PVEE is used to transmit the second power supply voltage. The first power supply voltage is greater than the second power supply voltage.

[0043] The driving transistor M3 can be turned on according to the potential of its gate, and the driving current generated by its conduction is used to drive the light-emitting element 11 to emit light. It can be understood that the gate potential of the driving transistor M3, as a driving transistor, determines the magnitude of the driving current generated by its conduction. Therefore, the brightness of the light-emitting element 11 can be adjusted by controlling the gate voltage of the driving transistor M3, thereby controlling the grayscale.

[0044] The drive current I generated by the driving transistor M3 can satisfy the following formula:

[0045] I = 1 / 2C ox μW / L(Vsg-|Vth|)2 ;

[0046] wherein μ is the carrier mobility of the driving transistor M3, W / L is the width-length ratio of the channel of the driving transistor M3, C ox is the gate oxide capacitance per unit area of the driving transistor M3, Vsg is the voltage difference between the source and the gate of the driving transistor M3, and Vth is the threshold voltage of the driving transistor M3.

[0047] It can be seen from the formula that the driving current I is related to the threshold voltage Vth of the driving transistor M3, and the driving current I determines the luminance of the light emitting element 11. Therefore, the threshold voltage Vth of the driving transistor M3 affects the luminance of the light emitting element 11.

[0048] Continuing to refer to Figure 3 Optionally, the pixel circuit 10 further comprises a data writing transistor M2 and an additional transistor M4. The gate of the data writing transistor M2 is electrically connected to the second scan signal line S2. The first pole M21 of the data writing transistor M2 is electrically connected to the second pole M32 of the driving transistor M3. The second pole M22 of the data writing transistor M2 is electrically connected to the data signal line Vdata. The gate of the additional transistor M4 is electrically connected to the second scan signal line S2. The first pole M41 of the additional transistor M4 is electrically connected to the first pole M31 of the driving transistor M3. The second pole M42 of the additional transistor M4 is electrically connected to the gate of the driving transistor M3.

[0049] In the data writing stage, the second scan signal on the second scan signal line S2 turns on the data writing transistor M2 and the additional transistor M4. At the same time, the driving transistor M3 is also in the on state. The data signal provided by the data signal line Vdata passes through the data writing transistor M2, the driving transistor M3 and the additional transistor M4, and is applied to the gate of the driving transistor M3 (i.e. the first node N1). The potential of the first node N1 is gradually pulled up until the driving transistor M3 is cut off. When the driving transistor M3 is cut off, the gate potential of the driving transistor M3 is VDATA-|Vth|, wherein VDATA is the voltage value of the data signal on the data signal line Vdata, and Vth is the threshold voltage of the driving transistor M3.

[0050] After the data writing stage ends, the display panel can enter the light emitting stage. In the light emitting stage, the first power signal on the first power signal line PVDD is transmitted to the second pole M32 of the driving transistor M3. Therefore, the voltage difference (i.e. Vsg) between the second pole M32 and the gate of the driving transistor M3 is VPVDD-(VDATA-|Vth|), so that the driving current I generated by the driving transistor M3 is 1 / 2C ox μW / L(Vsg-|Vth|)2 = 1 / 2C ox μW / L(VPVDD-VDATA) 2 wherein VPVDD is the voltage value of the first power signal on the first power signal line PVDD, thus achieving that the driving current generated by the driving transistor M3 is irrelevant to its own threshold voltage Vth.

[0051] However, the inventors have found through research that when light irradiates on the additional transistor M4, the additional transistor M4 will generate a leakage current, causing the potential of the first node N1 connected with the additional transistor M4 to rise, and further causing the driving current flowing through the light emitting element 11 to decrease, so that the luminance of the light emitting element 11 decreases.

[0052] Meanwhile, due to the difference in the material of the light emitting layer, the light emitting elements 11 of different colors will produce different degrees of luminance decrease in the first frame of picture in which the display panel is subjected to light irradiation and causes luminance decrease, thereby causing color cast phenomenon.

[0053] Based on the above technical problems, as shown in Figure 3 In the present embodiment, a photosensitive capacitor Cst2 is arranged in the pixel circuit 10, the first electrode C21 of the photosensitive capacitor Cst2 is electrically connected with the gate M31 of the driving transistor M3, and the second electrode C22 of the photosensitive capacitor Cst2 is electrically connected with the first signal line 12.

[0054] wherein the first voltage signal transmitted on the first signal line 12 is a fixed voltage signal, i.e. the voltage on the first signal line 12 is a constant voltage, thereby providing a constant fixed voltage for the photosensitive capacitor Cst2.

[0055] As shown in Figure 3 The photosensitive capacitor Cst2 is connected in series between the gate M31 of the driving transistor M3 (i.e. the first node N1) and the first signal line 12, when the display panel is in the first light irradiation intensity with weak light irradiation, the photosensitive capacitor Cst2 has a smaller first capacitance value, and when the display panel is in the second light irradiation intensity with strong light irradiation, the photosensitive capacitor Cst2 has a larger second capacitance value.

[0056] Wherein, with the increase of the external light intensity, the leakage current of the additional transistor M4 caused by the light also gradually increases, and the influence on the potential at the gate M31 (i.e. the first node N1) of the driving transistor M3 also gradually increases. In this embodiment, with the increase of the external light intensity, the capacitance value of the photosensitive capacitor Cst2 also increases, and thus the ability of the photosensitive capacitor Cst2 to maintain the potential of the first node N1 gradually increases. Therefore, when the external light intensity increases, the increase of the capacitance value of the photosensitive capacitor Cst2 helps to keep the potential of the first node N1 unchanged, reduces the decrease of the first frame light emitting brightness of the light emitting element after being irradiated by strong light, and thus better maintains the brightness stability of the display panel under different light conditions and improves the screen flicker problem.

[0057] Meanwhile, the decrease of the brightness of the display panel under strong light irradiation is smaller, which also helps to reduce the difference between the first frame brightness decreases of the light emitting elements 11 of different colors after being irradiated by strong light, and thus improves the color cast phenomenon.

[0058] It should be noted that the first light intensity, the second light intensity, the first capacitance value and the second capacitance value can be reasonably set according to actual needs to ensure that the display panel can provide stable display quality and good user experience under different light conditions, and the present embodiment does not make specific limitations.

[0059] In summary, the display panel provided by the present embodiment has the photosensitive capacitor connected in series between the gate of the driving transistor and the first signal line for transmitting the fixed voltage signal. When the display panel is under the first light intensity with weak light intensity, the photosensitive capacitor has a smaller first capacitance value. When the display panel is under the second light intensity with strong light intensity, the photosensitive capacitor has a larger second capacitance value. Thus, the capacitance value of the photosensitive capacitor increases with the increase of the external light intensity, and thus the ability of the photosensitive capacitor to maintain the potential of the gate of the driving transistor is enhanced when the external light intensity increases, which helps to keep the potential of the gate of the driving transistor unchanged and reduces the decrease of the first frame light emitting brightness of the display panel when being irradiated by strong light, better maintains the brightness stability of the display panel, improves the screen flicker problem, and also helps to reduce the difference between the first frame brightness decreases of the light emitting elements of different colors after being irradiated by strong light, and thus improves the color cast phenomenon.

[0060] Continuing to refer to Figure 3 Optionally, the display panel provided by the present embodiment also includes a first power signal line PVDD, and the driving transistor M3 is connected in series between the first power signal line PVDD and the light emitting element 11. The first signal line 12 and the first power signal line PVDD are the same signal line.

[0061] Specifically, as Figure 3As shown, the first current signal transmitted on the first power signal line PVDD is a direct current signal, rather than an alternating current (AC) signal, and thus a constant fixed voltage can be provided to the photosensitive capacitor Cst2 through the first power signal line PVDD.

[0062] In this embodiment, by setting the first signal line 12 and the first power signal line PVDD as the same signal line, i.e., directly electrically connecting the second electrode C22 of the photosensitive capacitor Cst2 with the first power signal line PVDD, the number of signal lines can be reduced, the circuit structure can be simplified, and the cost can be reduced.

[0063] Optionally, the first light intensity and the second light intensity are both greater than a preset light intensity threshold, the photosensitive capacitor Cst2 has a fixed capacitance value under a third light intensity, the third light intensity is less than or equal to the preset light intensity threshold, and the fixed capacitance value is less than the first capacitance value.

[0064] Specifically, a light intensity value can be preset as the preset light intensity threshold, and the preset light intensity threshold is used to distinguish between weak light and strong light conditions.

[0065] The third light intensity refers to the light intensity under a weak light condition, such as the light intensity in an indoor or overcast environment.

[0066] The first light intensity and the second light intensity refer to the light intensity under a strong light condition, such as the light intensity under the irradiation of outdoor sunlight.

[0067] In this embodiment, when the display panel is in a weak light condition (e.g., the light intensity is less than or equal to the preset light intensity threshold), the capacitance value of the photosensitive capacitor Cst2 is a smaller fixed capacitance value, which can avoid the photosensitive capacitor Cst2 from being coupled with other signals in the display panel to affect the potential change speed of the gate voltage of the driving transistor M3, thereby avoiding the photosensitive capacitor Cst2 from affecting the picture switching effect of the display panel under a weak light condition. Meanwhile, the capacitance value of the photosensitive capacitor Cst2 is a constant fixed capacitance value, which can ensure the brightness and color stability of the display panel under a weak light condition.

[0068] When the display panel is in a strong light condition (e.g., the light intensity is greater than the preset light intensity threshold), the capacitance value of the photosensitive capacitor Cst2 increases with the increase of the light intensity. At this time, the ability of the photosensitive capacitor Cst2 to maintain the gate potential (i.e., the first node N1) of the driving transistor M3 is enhanced, so that when the additional transistor M4 generates a large leakage current under the irradiation of light, the increase of the capacitance value of the photosensitive capacitor Cst2 helps to keep the potential of the first node N1 unchanged, thereby reducing the decrease of the first frame luminance of the display panel after being irradiated by strong light, and further better maintaining the brightness stability of the display panel under the condition of strong light irradiation, and improving the screen flicker problem.

[0069] Meanwhile, the luminance of the display panel under strong light irradiation decreases to a smaller extent, and the difference between the luminance of the first frame of the light emitting elements 11 of different colors under strong light irradiation is reduced, thereby improving the color cast phenomenon.

[0070] It should be noted that the preset light intensity threshold and the fixed capacitance value can be reasonably set according to actual needs to ensure that the display panel can provide stable display quality and good user experience under different light conditions, and the embodiments of the present application do not make specific limitations.

[0071] Optionally, the preset light intensity threshold A is 8000 lux≤A≤12000 lux.

[0072] As described above, when the light intensity at which the display panel is located is less than or equal to the light intensity threshold A, the photosensitive capacitor Cst2 has a smaller fixed capacitance value, so as to ensure the luminance and color stability of the display panel under weak light conditions; when the light intensity at which the display panel is located is greater than the light intensity threshold A, the capacitance value of the photosensitive capacitor Cst2 will increase with the increase of the light intensity, so as to better maintain the luminance stability of the display panel under strong light irradiation, and improve the screen flicker and color cast problems.

[0073] In the present embodiment, the preset light intensity threshold A is set to a value between 8000 lux and 12000 lux. On the one hand, the preset light intensity threshold A is not set too small, so that the capacitance value of the photosensitive capacitor Cst2 changes under weak light conditions, thereby avoiding affecting the luminance and color stability of the display panel under weak light conditions; on the other hand, the preset light intensity threshold A is not set too large, so that the capacitance value of the photosensitive capacitor Cst2 cannot respond to the change of the light intensity under strong light conditions, thereby avoiding the screen flicker and color cast problems under strong light conditions.

[0074] In the present embodiment, the preset light intensity threshold A can be set to 10000 lux to effectively balance the display performance of the display panel under different light conditions, but is not limited thereto.

[0075] Continuing to refer to Figure 3 Optionally, the display panel provided by the embodiments of the present application further includes a first power signal line PVDD, and the driving transistor M3 is connected in series between the first power signal line PVDD and the light emitting element 11. The pixel circuit 10 further includes a storage capacitor Cst1, and the storage capacitor Cst1 includes a third electrode C11 and a fourth electrode C12, the third electrode C11 is electrically connected with the gate electrode of the driving transistor M3, and the fourth electrode C12 is electrically connected with the first power signal line PVDD. The fixed capacitance value is smaller than the capacitance value of the storage capacitor Cst1.

[0076] Specifically, asFigure 3 As shown, the driving transistor M3 and the light-emitting element 11 are connected in series between the first power signal line PVDD and the second power signal line PVEE. The first power signal line PVDD is used to transmit the first power supply voltage, and the second power signal line PVEE is used to transmit the second power supply voltage. The first power supply voltage is greater than the second power supply voltage.

[0077] The storage capacitor Cst1 is connected in series between the gate of the driving transistor M3 and the first power supply signal line PVDD. The storage capacitor Cst1 can store the gate voltage of the driving transistor M3 to maintain the potential stability of the first node N1.

[0078] For example, such as Figure 1 As shown, the pixel circuit 10 also includes a reset transistor M5. The first terminal M51 of the reset transistor M5 is electrically connected to the gate of the driving transistor M3, the second terminal M52 of the reset transistor M5 is electrically connected to the reference signal line Vref, and the gate of the reset transistor M5 is electrically connected to the first scan signal line S1.

[0079] The driving process of the pixel circuit 10 includes, for example:

[0080] During the initialization phase, the first scan signal on the first scan signal line S1 turns on the reset transistor M5. The reference voltage on the reference signal line Vref is applied to the third electrode C11 of the storage capacitor Cst1 through the reset transistor M5, that is, the potential of the first node N1 is the reference voltage, so as to reset the first node N1. At this time, the gate potential of the driving transistor M3 is also the reference voltage.

[0081] During the data writing phase, the second scan signal on the second scan signal line S2 turns on the data writing transistor M2 and the additional transistor M4. At this time, the gate potential of the driving transistor M3 is the reference voltage, and the driving transistor M3 is also turned on. The data signal on the data signal line Vdata is applied to the first node N1 through the data writing transistor M2, the driving transistor M3 and the additional transistor M4, thereby writing the data signal into the storage capacitor Cst1.

[0082] In this embodiment, the fixed capacitance value of the photocapacitor Cst2 under the third light intensity is set to be less than the capacitance value of the storage capacitor Cst1. This makes the fixed capacitance value of the photocapacitor Cst2 smaller under low light conditions, which can reduce the coupling effect between the photocapacitor Cst2 and other signals in the display panel under low light conditions. This reduces the impact of the photocapacitor Cst2 on the potential change rate of the gate voltage of the driving transistor M3, thereby preventing the photocapacitor Cst2 from affecting the screen switching effect of the display panel under low light conditions.

[0083] Optionally, the fixed capacitance value is F1, and the storage capacitance value is F2, wherein F1≤F2 / 100.

[0084] The fixed capacitance value of the photosensitive capacitor Cst2 under the third light intensity is less than or equal to 1 / 100 of the capacitance value of the storage capacitor Cst1, so that the fixed capacitance value of the photosensitive capacitor Cst2 under the weak light condition is much smaller than the capacitance value of the storage capacitor Cst1. Under the weak light condition, the coupling effect between the photosensitive capacitor Cst2 and other signals in the display panel can be greatly reduced, and the potential change speed of the gate voltage of the driving transistor M3 affected by the coupling between the photosensitive capacitor Cst2 and other signals in the display panel is avoided, thereby avoiding the influence of the photosensitive capacitor Cst2 on the picture switching effect of the display panel under the weak light condition.

[0085] Continuing to refer to Figure 2 and Figure 2 Optionally, the display panel provided by the embodiment of the present application further includes a substrate 14, and the photosensitive capacitor Cst2 is located on one side of the substrate 14. The photosensitive capacitor Cst2 further includes a photosensitive dielectric layer C20 located between the first electrode C21 and the second electrode C22. The first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 are stacked on one side of the substrate 14. In the thickness direction of the substrate 14, the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 have an overlapping region.

[0086] Specifically, as shown in Figure 2 The substrate 14 can provide support and structural foundation for the display panel.

[0087] The photosensitive capacitor Cst2 is located on one side of the substrate 14, and the photosensitive capacitor Cst2 includes the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 which are stacked. In the thickness direction of the substrate 14, the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 have an overlapping region to ensure the effective formation and function realization of the photosensitive capacitor Cst2.

[0088] By stacking the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 on one side of the substrate 14, the space utilization of the display panel can be improved, and the design is more compact.

[0089] Further, the photosensitive dielectric layer C20 is located between the first electrode C21 and the second electrode C22. The material of the photosensitive dielectric layer C20 is a photosensitive material. When light irradiates on the photosensitive dielectric layer C20, the characteristics of the photosensitive dielectric layer C20 will change, thereby affecting the capacitance value of the photosensitive capacitor Cst2, and realizing the function that the capacitance value of the photosensitive capacitor Cst2 changes with the change of the light intensity.

[0090] The material of the photosensitive dielectric layer C20 can be designed to have a desired change in capacitance value of the photosensitive capacitor Cst2 under different light intensities. The design of the material of the photosensitive dielectric layer C20 can include selection of the material of the photosensitive dielectric layer C20, doping of the photosensitive dielectric layer C20, selection of the doping material, adjustment of the doping ratio, etc., which are not specifically limited in the embodiments of the present application.

[0091] In addition, the thickness of the photosensitive dielectric layer C20 can also be adjusted to adjust the capacitance value of the photosensitive capacitor Cst2 and its response characteristics to light.

[0092] For example, the smaller the thickness of the photosensitive dielectric layer C20, the greater the capacitance value of the photosensitive capacitor Cst2; the greater the thickness of the photosensitive dielectric layer C20, the smaller the capacitance value of the photosensitive capacitor Cst2.

[0093] Alternatively, the thinner photosensitive dielectric layer C20 is more sensitive to light and can change the capacitance value faster; the thicker photosensitive dielectric layer C20 has better stability and durability, and the thickness of the photosensitive dielectric layer C20 is not specifically limited in the embodiments of the present application.

[0094] Optionally, the photosensitive dielectric layer C20 has a first electrical conductivity under a first light intensity, and the photosensitive dielectric layer has a second electrical conductivity under a second light intensity, the first electrical conductivity being less than the second electrical conductivity.

[0095] When light is incident on the photosensitive dielectric layer C20, based on the photoelectric effect of the photosensitive material, the energy of the photons will excite electrons, causing the electrical conductivity of the photosensitive dielectric layer C20 to change, thereby causing the capacitance value of the photosensitive capacitor Cst2 to change.

[0096] In this embodiment, under the weaker first light intensity, the photosensitive dielectric layer C20 has a lower first electrical conductivity, thereby realizing that the photosensitive capacitor Cst2 has a smaller first capacitance value. Under the stronger second light intensity, the photosensitive dielectric layer C20 has a higher second electrical conductivity, thereby realizing that the photosensitive capacitor Cst2 has a larger second capacitance value.

[0097] Thus, by setting the conductivity of the photosensitive dielectric layer C20 to increase with the increase of the light intensity, the capacitance value of the photosensitive capacitor Cst2 is set to increase with the increase of the light intensity. When the external light intensity increases, the capacitance value of the photosensitive capacitor Cst2 increases, which enhances the ability of the photosensitive capacitor Cst2 to maintain the gate potential of the driving transistor M3, helps to keep the gate potential of the driving transistor M3 unchanged, reduces the decrease of the first frame light emitting brightness of the display panel when it is irradiated by strong light, better maintains the brightness stability of the display panel, improves the flash screen problem, and also helps to reduce the difference between the first frame brightness decreases of the light emitting elements 11 of different colors after being irradiated by strong light, thereby improving the color cast phenomenon.

[0098] Optionally, the photosensitive dielectric layer C20 has a first dielectric constant under a first light intensity, and has a second dielectric constant under a second light intensity, the first dielectric constant being smaller than the second dielectric constant.

[0099] When the light irradiates on the photosensitive dielectric layer C20, based on the photoelectric effect of the photosensitive material, the energy of the photons is absorbed to cause the generation of photo-generated carriers to change, thereby causing the dielectric constant of the photosensitive dielectric layer C20 to change, thereby causing the capacitance value of the photosensitive capacitor Cst2 to change.

[0100] In the embodiment, under the first light intensity, the photosensitive dielectric layer C20 has a first dielectric constant, and the photosensitive capacitor Cst2 has a first capacitance value. Under the second light intensity, the photosensitive dielectric layer C20 has a second dielectric constant, and the photosensitive capacitor Cst2 has a second capacitance value.

[0101] Thus, by setting the dielectric constant of the photosensitive dielectric layer C20 to increase with the increase of the light intensity, the capacitance value of the photosensitive capacitor Cst2 is set to increase with the increase of the light intensity. When the external light intensity increases, the capacitance value of the photosensitive capacitor Cst2 increases, which enhances the ability of the photosensitive capacitor Cst2 to maintain the gate potential of the driving transistor M3, helps to keep the gate potential of the driving transistor M3 unchanged, reduces the decrease of the first frame light emitting brightness of the display panel when it is irradiated by strong light, better maintains the brightness stability of the display panel, improves the flash screen problem, and also helps to reduce the difference between the first frame brightness decreases of the light emitting elements 11 of different colors after being irradiated by strong light, thereby improving the color cast phenomenon.

[0102] Optionally, the material of the photosensitive dielectric layer C20 includes at least one of copper tungstate and titanium oxide.

[0103] The copper tungstate (CuWO4) and the titanium oxide (TiO2) are both semiconductor materials with good photosensitive properties, and the conductivity of the two materials changes when they are irradiated by light, thereby affecting the dielectric constant.

[0104] In the embodiment, the photosensitive dielectric layer C20 adopts at least one of copper tungstate (CuWO4) and titanium oxide (TiO2), which can achieve good photosensitive characteristics and has a wide spectral response range, so that the photosensitive capacitor Cst2 can be more sensitive to the change of light intensity.

[0105] Further, the performance of the photosensitive dielectric layer C20 can be further optimized by doping to help control the conductivity and dielectric constant of the photosensitive dielectric layer C20, thereby affecting the change of the capacitance value of the photosensitive capacitor Cst2, so that the photosensitive capacitor Cst2 can have an expected change of the capacitance value under different light intensities.

[0106] With reference to Figure 2 Optionally, the overlapping area of the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 along the thickness direction of the substrate 14 is equal to the area of the first electrode C21, and / or the overlapping area of the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 is equal to the area of the second electrode C22.

[0107] Specifically, as shown in Figure 4 , the photosensitive dielectric layer C20 completely covers the first electrode C21 and / or the second electrode C22 in the thickness direction of the substrate 14, so that the effective area of the photosensitive capacitor Cst2 can be maximized in the effective space, thereby achieving a greater change of the capacitance value in a limited space, so that the change of the capacitance value of the photosensitive capacitor Cst2 can better respond to the change of the light intensity.

[0108] Figure 4 A partial cross-sectional structure schematic diagram of a display panel provided by the embodiment of the present application is shown in Figure 4 Optionally, the length of the photosensitive dielectric layer C20 in the first direction X is L1, and the length of the second electrode C22 in the first direction X is L2, L1≥(3 / 2)*L2, wherein the first direction X is parallel to the plane in which the substrate 14 is located.

[0109] Specifically, as shown in Figure 2 , by setting the length L1 of the photosensitive dielectric layer C20 in the first direction X to be at least 1.5 times the length L2 of the second electrode C22 in the first direction X, while satisfying that the photosensitive dielectric layer C20 completely covers the first electrode C21 and the second electrode C22 in the thickness direction of the substrate 14, the difficulty of alignment in the process can be reduced, so that the process is easier to implement, which helps to improve the yield and controllability of the process in the manufacturing process.

[0110] With reference to Figure 4 and Figure 2Optionally, the driving transistor M3 is connected in series between the first power signal line PVDD and the light emitting element 11. The pixel circuit 10 further comprises a storage capacitor Cst1, the storage capacitor Cst1 comprising a third electrode C11 and a fourth electrode C12, the third electrode C11 being electrically connected to the gate of the driving transistor M3, and the fourth electrode C12 being electrically connected to the first power signal line PVDD. The third electrode C11 and the fourth electrode C12 are stacked on one side of the substrate 14, and the fourth electrode C12 is located on the side of the third electrode C11 away from the substrate 14. In the thickness direction of the substrate 14, the spacing between the first electrode C21 and the second electrode C22 is greater than the spacing between the third electrode C11 and the fourth electrode C12.

[0111] The connection structure and function of the driving transistor M3, the first power signal line PVDD, the light emitting element 11 and the storage capacitor Cst1 can refer to the above-mentioned embodiments, which will not be described here.

[0112] As shown in Figure 4 and Figure 2 , in the thickness direction of the substrate 14, the first power signal line PVDD is arranged on the side of the storage capacitor Cst1 away from the substrate 14, so that the fourth electrode C12 of the storage capacitor Cst1 is arranged on the side of the third electrode C11 away from the substrate 14, which facilitates the formation of an electrical connection between the fourth electrode C12 of the storage capacitor Cst1 and the first power signal line PVDD.

[0113] Continuing to refer to Figure 4 and Figure 2 , optionally, when the first signal line 12 and the first power signal line PVDD are the same signal line, or when an electrical connection is formed between the first signal line 12 and the first power signal line PVDD, the second electrode C22 of the photosensitive capacitor Cst2 is arranged on the side of the first electrode C21 away from the substrate 14, which facilitates the formation of an electrical connection between the second electrode C22 of the photosensitive capacitor Cst2 and the first power signal line PVDD.

[0114] Further, as shown in Figure 4 and Figure 5 , in the thickness direction of the substrate 14, the spacing between the first electrode C21 and the second electrode C22 is greater than the spacing between the third electrode C11 and the fourth electrode C12, so that the fixed capacitance value of the photosensitive capacitor Cst2 is less than the capacitance value of the storage capacitor Cst1, thereby realizing a smaller fixed capacitance value of the photosensitive capacitor Cst2 under weak light conditions, reducing the coupling effect between the photosensitive capacitor Cst2 and other signals in the display panel under weak light conditions, avoiding the influence of the photosensitive capacitor Cst2 on the potential change speed of the gate voltage of the driving transistor M3 due to the coupling between the photosensitive capacitor Cst2 and other signals in the display panel, and further avoiding the influence of the photosensitive capacitor Cst2 on the picture switching effect of the display panel under weak light conditions.

[0115] In which, the distance between the first electrode C21 and the second electrode C22 can be greater than the distance between the third electrode C11 and the fourth electrode C12 by increasing the thickness of the film layer between the first electrode C21 and the second electrode C22.

[0116] For example, as shown in Figure 5 and Figure 2 , the third electrode C11 and the fourth electrode C12 of the storage capacitor Cst1 have a first interlayer insulating layer 16 therebetween, the first interlayer insulating layer 16 can be an insulating layer provided in an entire layer, and the first electrode C21 and the second electrode C22 of the photosensitive capacitor Cst2 are respectively located on both sides of the first interlayer insulating layer 16 along the thickness direction of the substrate 14, and the photosensitive dielectric layer C20 is further provided between the first electrode C21 and the second electrode C22 on the basis of the first interlayer insulating layer 16, so that the distance between the first electrode C21 and the second electrode C22 is greater than the distance between the third electrode C11 and the fourth electrode C12, and the fixed capacitance value of the photosensitive capacitor Cst2 is less than the capacitance value of the storage capacitor Cst1.

[0117] In other embodiments, the distance between the first electrode C21 and the second electrode C22 can be greater than the distance between the third electrode C11 and the fourth electrode C12 by adjusting the film layer position of the first electrode C21 and the second electrode C22.

[0118] For example, Figure 4 Another partial cross-sectional structure schematic diagram of a display panel provided by an embodiment of the present application is shown in Figure 5 , which takes the first electrode C21 of the photosensitive capacitor Cst2 and the third electrode C11 of the storage capacitor Cst1 as an example, and sets the second electrode C22 of the photosensitive capacitor Cst2 on the side away from the substrate 14 of the fourth electrode C12 of the storage capacitor Cst2 along the thickness direction of the substrate 14, for example, sets the second electrode C22 of the photosensitive capacitor Cst2 and the first power signal line PVDD in the same film layer, so that the distance between the first electrode C21 and the second electrode C22 is greater than the distance between the third electrode C11 and the fourth electrode C12, thereby realizing that the fixed capacitance value of the photosensitive capacitor Cst2 is less than the capacitance value of the storage capacitor Cst1.

[0119] It should be noted that the specific film layer position of the first electrode C21 and the second electrode C22 of the photosensitive capacitor Cst2, and the film layer structure between the first electrode C21 and the second electrode C22 are not limited to the above embodiments, and the embodiments of the present application do not specifically limit them.

[0120] Continuing to refer to Figures 2-5 , Figures 2-5 and Figures 2-5Optionally, along the thickness direction of the substrate 14, the first electrode C21 is located on the side of the fourth electrode C12 close to the substrate 14.

[0121] If the photosensitive capacitor Cst2 is too close to the light-emitting surface of the display panel, external light will directly irradiate on the photosensitive capacitor Cst2, which makes the photosensitive capacitor Cst2 too sensitive to the external light intensity, and the capacitance value of the photosensitive capacitor Cst2 is easily changed in a weak light environment, thereby being not conducive to ensuring the brightness and color stability of the display panel in a weak light condition.

[0122] In the embodiment, the first electrode C21 of the photosensitive capacitor Cst2 is arranged on the side of the fourth electrode C12 of the storage capacitor Cst1 close to the substrate 14, so that the photosensitive capacitor Cst2 is far away from the light-emitting surface of the display panel, and the sensitivity of the photosensitive capacitor Cst2 to the light intensity is in a suitable range, thereby avoiding the capacitance value of the photosensitive capacitor Cst2 from being changed in a weak light environment, and ensuring the brightness and color stability of the display panel in a weak light condition.

[0123] Continuing to refer to Figures 2-5 Optionally, the pixel circuit 10 includes at least one thin film transistor T including the driving transistor M3, wherein the thin film transistor T can include an active layer T1, a gate T2 and a source-drain electrode T3 arranged on the side of the substrate 14 in a stacked manner.

[0124] In the embodiment, the first electrode C21 of the photosensitive capacitor Cst2 can be located in the same film layer as the gate T2, or the first electrode C21 of the photosensitive capacitor Cst2 is located in the film layer on the side of the gate T2 close to the substrate 14, so that the photosensitive capacitor Cst2 is far away from the light-emitting surface of the display panel, thereby avoiding the capacitance value of the photosensitive capacitor Cst2 from being changed in a weak light environment, and ensuring the brightness and color stability of the display panel in a weak light condition.

[0125] Further, after the film layer position of the first electrode C21 of the photosensitive capacitor Cst2 is determined, the film layer position of the second electrode C22 can be determined according to the film layer position of the first electrode C21 and the required distance between the first electrode C21 and the second electrode C22, which is not specifically limited in the embodiment of the present application.

[0126] Continuing to refer to Figure 2Optionally, the driving transistor M3 is connected in series between the first power signal line PVDD and the light-emitting element 11. The pixel circuit 10 also includes a storage capacitor Cst1, which includes a third electrode C11 and a fourth electrode C12. The third electrode C11 is electrically connected to the gate of the driving transistor M3, and the fourth electrode C12 is electrically connected to the first power signal line PVDD. The third electrode C11 and the fourth electrode C12 are stacked on one side of the substrate 14, and the fourth electrode C12 is located on the side of the third electrode C11 away from the substrate 14. Along the thickness direction of the substrate 14, the overlap area between the first electrode C21 and the second electrode C22 is S1, and the overlap area between the third electrode C11 and the fourth electrode C12 is S2, where S1 < S2.

[0127] The specific structure and function of the driving transistor M3, the first power signal line PVDD, the light-emitting element 11 and the storage capacitor Cst1 can be referred to the above embodiments, and will not be repeated here.

[0128] In this embodiment, as Figure 4 As shown, along the thickness direction of the substrate 14, the overlap area S1 between the first electrode C21 and the second electrode C22 is set to be smaller than the overlap area S2 between the third electrode C11 and the fourth electrode C12, so that the size of the photocapacitor Cst2 is smaller than the size of the storage capacitor Cst1, thereby making the fixed capacitance value of the photocapacitor Cst2 smaller than the capacitance value of the storage capacitor Cst1. This setting makes the fixed capacitance value of the photocapacitor Cst2 smaller under low light conditions, which can reduce the coupling effect between the photocapacitor Cst2 and other signals in the display panel under low light conditions, avoid the photocapacitor Cst2 from coupling with other signals in the display panel and affecting the potential change rate of the gate voltage of the driving transistor M3, and thus avoid the photocapacitor Cst2 from affecting the screen switching effect of the display panel under low light conditions.

[0129] Furthermore, 5*S1≤S2≤10*S1.

[0130] The overlapping area S2 between the third electrode C11 and the fourth electrode C12 along the thickness direction of the substrate 14 is 5 to 10 times of the overlapping area S1 between the first electrode C21 and the second electrode C22, so that the size of the storage capacitor Cst1 is 5 to 10 times of the size of the photosensitive capacitor Cst2. While meeting the requirement that the capacitance value of the photosensitive capacitor Cst2 changes with the light intensity, the fixed capacitance value of the photosensitive capacitor Cst2 under the weak light condition is small enough, so as to reduce the coupling effect between the photosensitive capacitor Cst2 and other signals in the display panel under the weak light condition, avoid the influence of the photosensitive capacitor Cst2 and other signals in the display panel on the potential change speed of the gate voltage of the driving transistor M3, and further avoid the influence of the photosensitive capacitor Cst2 on the picture switching effect of the display panel under the weak light condition. Meanwhile, the photosensitive capacitor Cst2 has a small size, so as to reduce the occupied space and help to realize a more compact pixel design, so that the display panel can support a higher resolution.

[0131] With reference to Figure 5 Optionally, the driving transistor M3 is connected in series between the first power signal line PVDD and the light emitting element 11. The pixel circuit 10 further includes a storage capacitor Cst1, which includes a third electrode C11 and a fourth electrode C12. The third electrode C11 is electrically connected to the gate of the driving transistor M3, and the fourth electrode C12 is electrically connected to the first power signal line PVDD. The third electrode C11 and the fourth electrode C12 are stacked on one side of the substrate 14, and the fourth electrode C12 is located on the side of the third electrode C11 away from the substrate 14. The first electrode C21 and the third electrode C11 are located in the same film layer, and / or the second electrode C22 and the fourth electrode C12 are located in the same film layer.

[0132] The specific structure and function of the driving transistor M3, the first power signal line PVDD, the light emitting element 11 and the storage capacitor Cst1 can refer to the above-mentioned embodiments, which will not be described here.

[0133] In this embodiment, as shown in Figure 2 , Figure 4 and Figure 5 , the first electrode C21 of the photosensitive capacitor Cst2 and the third electrode C11 of the storage capacitor Cst1 can be located in the same film layer, so as to reduce the setting of one layer of metal layer, thereby achieving the purpose of reducing production cost and reducing the thickness of the display panel. At the same time, the first electrode C21 can be made of the same material as the third electrode C11, so that the first electrode C21 and the third electrode C11 can be prepared in the same process, thereby shortening the process time.

[0134] With reference to Figure 2 , Figure 4 and Figure 5The second electrode C22 of the photosensitive capacitor Cst2 and the fourth electrode C12 of the storage capacitor Cst1 can be located in the same film layer to reduce the number of metal layers, thereby reducing the production cost and the thickness of the display panel. Meanwhile, the same material as the third electrode C11 can be used to manufacture the first electrode C21 and the third electrode C11 in the same process, thereby shortening the process time.

[0135] It should be noted that, as shown in Figure 2 、 Figure 4 and Figure 5 , the third electrode C11 and the fourth electrode C12 of the storage capacitor Cst1 have a first interlayer insulating layer 16 therebetween, wherein the first interlayer insulating layer 16 can be an insulating layer laid in an entire layer, so that the first interlayer insulating layer 16 does not need to be subjected to a separate patterning process when the first interlayer insulating layer 16 is manufactured, thereby simplifying the manufacturing process and improving the production efficiency.

[0136] At this time, as shown in Figure 6 、 Figure 6 and Figure 6 , the first electrode C21 and the second electrode C22 of the photosensitive capacitor Cst2 include the first interlayer insulating layer 16 and the photosensitive dielectric layer C20 arranged in a stacked manner therebetween, so that the distance between the first electrode C21 and the second electrode C22 is greater than the distance between the third electrode C11 and the fourth electrode C12, thereby realizing that the fixed capacitance value of the photosensitive capacitor Cst2 is less than the capacitance value of the storage capacitor Cst1, which is conducive to reducing the coupling effect between the photosensitive capacitor Cst2 and other signals in the display panel under weak light conditions, avoiding the influence of the photosensitive capacitor Cst2 on the driving transistor M3 gate voltage potential change speed caused by the coupling between the photosensitive capacitor Cst2 and other signals in the display panel, and further avoiding the influence of the photosensitive capacitor Cst2 on the picture switching effect of the display panel under weak light conditions.

[0137] Figures 2-5 Another partial cross-sectional structure schematic diagram of a display panel provided by the embodiment of the present application is shown in Figure 7 , and the driving transistor M3 is connected in series between the first power signal line PVDD and the light emitting element 11. The pixel circuit 10 further includes a storage capacitor Cst1, the storage capacitor Cst1 includes a third electrode C11 and a fourth electrode C12, the third electrode C11 is electrically connected to the gate of the driving transistor M3, and the fourth electrode C12 is electrically connected to the first power signal line PVDD. The third electrode C11 and the fourth electrode C12 are arranged in a stacked manner on one side of the substrate 14, and the fourth electrode C12 is located on the side of the third electrode C11 away from the substrate 14. The first electrode C21 and the third electrode C11 are the same electrode plate, and the second electrode C22 and the fourth electrode C12 are the same electrode plate.

[0138] The specific structure and function of the drive transistor M3, the first power supply signal line PVDD, the light emitting element 11, and the storage capacitor Cst1 can refer to the above-mentioned embodiments, which will not be described here again.

[0139] In the embodiment, as shown in Figure 8 , the third electrode C11 of the storage capacitor Cst1 is taken as the first electrode C21 of the photosensitive capacitor Cst2, and the fourth electrode C12 of the storage capacitor Cst1 is taken as the second electrode C22 of the photosensitive capacitor Cst2, so as to multiplex the storage capacitor Cst1 as the photosensitive capacitor Cst2. At this time, only the photosensitive dielectric layer C20 needs to be added between the third electrode C11 and the fourth electrode C12 of the storage capacitor Cst1, so that the storage capacitor Cst1 can realize the function of the photosensitive capacitor Cst2, which is beneficial to simplify the circuit structure and the manufacturing process.

[0140] Continuing to refer to Figure 7 , since the size and structure of the storage capacitor Cst1 are fixed, in other embodiments, the photosensitive capacitor Cst2 can also be set as a capacitor structure independent of the storage capacitor Cst1, so as to increase the structure design space of the photosensitive capacitor Cst2, which is beneficial to realize the ideal photosensitive characteristics.

[0141] Figure 7 A structure schematic diagram of a photosensitive capacitor provided in an embodiment of the present application is shown in Figure 8 , which is Figure 7 a cross-sectional structure schematic diagram along the B-B' direction. Figure 8 , and Figures 7-8 , optionally, in the direction perpendicular to the display panel, the photosensitive dielectric layer C20 covers at least part of the edge of the fourth electrode C12.

[0142] Specifically, as shown in Figures 7-8 , and Figure 2 , when the storage capacitor Cst1 is multiplexed as the photosensitive capacitor Cst2, since the storage capacitor Cst1 usually has a large size, in the direction perpendicular to the plane where the display panel is located, that is, the thickness direction of the substrate 14, the photosensitive dielectric layer C20 can be locally arranged in the overlapping area between the third electrode C11 and the fourth electrode C12 of the storage capacitor Cst1, so as to realize the function of the photosensitive capacitor Cst2 without significantly affecting the size and performance of the storage capacitor Cst1.

[0143] In a direction perpendicular to the plane in which the display panel lies, the photosensitive dielectric layer C20 covers at least part of the edge of the fourth electrode C12, or in other words, the photosensitive dielectric layer C20 is arranged at the edge position of the fourth electrode C12, so as to avoid external light being completely blocked by the fourth electrode C12 and failing to irradiate onto the photosensitive dielectric layer C20, thereby ensuring that the photosensitive dielectric layer C20 can receive sufficient external light, so that the photosensitive capacitor Cst2 has ideal sensitivity to external light intensity.

[0144] With reference to Figure 4 , optionally, in a direction parallel to the plane in which the display panel lies, the edge of the photosensitive dielectric layer C20 exceeds the edge of the fourth electrode C12, so as to ensure that at least part of the photosensitive dielectric layer C20 is not blocked by the fourth electrode C12 in the thickness direction of the substrate 14, thereby ensuring that the photosensitive dielectric layer C20 can receive sufficient external light, so that the photosensitive capacitor Cst2 has ideal sensitivity to external light intensity.

[0145] Further, as shown in Figure 5 , the photosensitive dielectric layer C20 can have a ring shape, and in the thickness direction of the substrate 14, the photosensitive dielectric layer C20 covers the edge of the fourth electrode C12, so as to avoid external light being completely blocked by the fourth electrode C12 and failing to irradiate onto the photosensitive dielectric layer C20, while the area of the photosensitive dielectric layer C20 meets the ideal photosensitive characteristic requirement, thereby ensuring that the photosensitive dielectric layer C20 can receive sufficient external light to realize the photosensitive function of the photosensitive capacitor Cst2.

[0146] The shape and specific arrangement range of the photosensitive dielectric layer C20 can be set according to actual requirements, and embodiments of the present application do not make specific limitations thereto.

[0147] With reference to Figure 2 , Figure 4 and Figure 5 , optionally, along the thickness direction of the substrate 14, the first electrode C21 and the gate T2 of the driving transistor M3 do not have an overlapping area, and the second electrode C22 and the gate T2 of the driving transistor M3 do not have an overlapping area.

[0148] In which, as Figure 9 , Figure 10 and Figure 9As shown, when the storage capacitor Cst1 is not multiplexed as the photosensitive capacitor Cst2, that is, the photosensitive capacitor Cst2 is a capacitor structure independent of the storage capacitor Cst1, the first electrode C21 and the second electrode C22 of the photosensitive capacitor Cst2 do not form an overlapping area with the gate T2 of the driving transistor M3 in the thickness direction of the substrate 14, so as to avoid the photosensitive capacitor Cst2 from interfering with the operation of the driving transistor M3, thereby ensuring the normal operation of the driving transistor M3 and improving the stability of the display panel.

[0149] Figure 9 Another structural schematic diagram of a display panel provided by the embodiment of the present application is shown in FIG. 4. Figure 10 As shown in FIG. 4, Figure 9 A structural schematic diagram of a cross section along the direction of C-C’ is shown in FIG. 5. Figure 10 As shown in FIG. 5, Figure 9 Optionally, the pixel circuit 10 includes a first pixel circuit 10A and a second pixel circuit 10B, and the light emitting element 11 includes a first light emitting element 11A and a second light emitting element 11B, the first pixel circuit 10A and the first light emitting element 11A are electrically connected, the second pixel circuit 10B and the second light emitting element 11B are electrically connected, and the light emitting colors of the first light emitting element 11A and the second light emitting element 11B are different. The photosensitive capacitor Cst2 in the first pixel circuit 10A is a first photosensitive capacitor Cst2A, the photosensitive capacitor Cst2 in the second pixel circuit 10B is a second photosensitive capacitor Cst2B, the first capacitance value of the first photosensitive capacitor Cst2A is different from the first capacitance value of the second photosensitive capacitor Cst2B, and / or the second capacitance value of the first photosensitive capacitor Cst2A is different from the second capacitance value of the second photosensitive capacitor Cst2B.

[0150] Specifically, as shown in FIG. 5 and FIG. 6, Figure 10 As shown in FIG. 5 and FIG. 6, Figure 11 The light emitting element 11 includes at least two light emitting elements of different colors, for example, the light emitting element 11 can include a red light emitting element R, a green light emitting element G and a blue light emitting element B to realize color image display, but is not limited thereto.

[0151] In the embodiment, the light emitting element 11 includes a first light emitting element 11A and a second light emitting element 11B emitting light of different colors, wherein the pixel circuit 10 connected with the first light emitting element 11A is a first pixel circuit 10A, and the first pixel circuit 10A is used to drive the first light emitting element 11A to emit light; the pixel circuit 10 connected with the second light emitting element 11B is a second pixel circuit 10B, and the second pixel circuit 10B is used to drive the second light emitting element 11B to emit light. In this way, the sub-pixel composed of the first light emitting element 11A and the first pixel circuit 10A and the sub-pixel composed of the second light emitting element 11B and the second pixel circuit 10B are sub-pixels of different colors.

[0152] The first light emitting element 11A can be any one of a red light emitting element R, a green light emitting element G and a blue light emitting element B, the second light emitting element 11B can be any one of a red light emitting element R, a green light emitting element G and a blue light emitting element B, and the light emitting colors of the first light emitting element 11A and the second light emitting element 11B are different. The light emitting colors of the first light emitting element 11A and the second light emitting element 11B are not limited in the embodiment of the application.

[0153] Further, a plurality of driving signal lines (such as scan lines, data lines, voltage signal lines, etc.) are arranged in the display panel. The driving signal lines usually adopt metal traces. The metal traces can shield the thin film transistor T and reduce the influence of external light on the thin film transistor T. Meanwhile, a light shielding metal layer can be additionally arranged in the display panel to further reduce the influence of external light on the thin film transistor T.

[0154] However, the inventors have found through research that, due to the requirements of the preparation process of the display panel and the transmittance requirement, the metal traces and the light shielding metal layer cannot completely shield the thin film transistor T. When the angle of incidence of light is large or the intensity of light is too large, light can still be incident on the thin film transistor T. Meanwhile, a bottom metal layer is usually arranged on the side of the thin film transistor T close to the substrate 14. The reflection of external light by the bottom metal layer can also cause part of the light to be incident on the thin film transistor T, thereby causing the thin film transistor T to generate a leakage current. Therefore, the influence of light on the thin film transistor T cannot be completely avoided, which can cause the brightness of the first frame of the display panel to decrease under light.

[0155] Meanwhile, due to the layout design, the sizes and arrangement modes of the subpixels of different colors are different, so that the degree of shielding of the thin film transistor T in the subpixels of different colors by the metal traces and the light shielding metal layer is different. Under strong light, the amount of light received by the thin film transistor T in the subpixels of different colors is different, so that the size of the leakage current generated by the thin film transistor T in the subpixels of different colors is different, thereby causing the degree of decrease in the brightness of the first frame of the subpixels of different colors after being irradiated by strong light to be different, and the problem of color cast of the display panel under strong light occurs.

[0156] In the present embodiment, the first capacitance value of the first photosensitive capacitor Cst2A in the first pixel circuit 10A is set to be different from the first capacitance value of the second photosensitive capacitor Cst2B in the second pixel circuit 10B, and / or the second capacitance value of the first photosensitive capacitor Cst2A in the first pixel circuit 10A is set to be different from the second capacitance value of the second photosensitive capacitor Cst2B in the second pixel circuit 10B, so that the first photosensitive capacitor Cst2 in the different color sub-pixels has different first capacitance values under the first light intensity and / or different second capacitance values under the second light intensity, and the first photosensitive capacitor Cst2 in the different color sub-pixels has different capacitance values under the same light intensity, so that the ability of the first photosensitive capacitor Cst2 in the different color sub-pixels to maintain the gate potential of the driving transistor M3 under the same light intensity is different, thereby the difference in the amount of light received by the thin film transistor T in the different color sub-pixels can be balanced by adjusting the capacitance value of the photosensitive capacitor Cst2 in the different color sub-pixels, wherein the greater the amount of light received by the thin film transistor T in the sub-pixel, the greater the capacitance value of the photosensitive capacitor Cst2, and vice versa, so as to reduce the difference in the first frame picture brightness change of the different color sub-pixels under strong light conditions, and improve the color cast problem of the display panel under strong light irradiation.

[0157] For example, the degree to which the thin-film transistor T in different color sub-pixels is blocked by metal traces and light-shielding metal layers can be analyzed. If the degree of blocking of the thin-film transistor T in the first pixel circuit 10A is greater than that in the second pixel circuit 10B, then under the same illumination intensity (e.g., the first illumination intensity or the second illumination intensity), the amount of illumination received by the thin-film transistor T in the first pixel circuit 10A is less than that received by the thin-film transistor T in the second pixel circuit 10B. Therefore, the leakage current generated by the thin-film transistor T in the first pixel circuit 10A is less than that generated by the thin-film transistor T in the second pixel circuit 10B. This can lead to a smaller increase in the gate potential of the driving transistor M3 in the first pixel circuit 10A compared to the increase in the gate potential of the driving transistor M3 in the second pixel circuit 10B. Consequently, the decrease in the luminance of the first light-emitting element 11A is less than that of the second light-emitting element 11A. To mitigate the decrease in the luminance of the second light-emitting element 11B, the capacitance value (e.g., the first capacitance value or the second capacitance value) of the first photosensitive capacitor Cst2A in the first pixel circuit 10A is set to be less than the capacitance value (e.g., the first capacitance value or the second capacitance value) of the second photosensitive capacitor Cst2B in the second pixel circuit 10B. This reduces the ability of the first photosensitive capacitor Cst2A in the first pixel circuit 10A to maintain the gate potential of the driving transistor M3 to be less than the ability of the second photosensitive capacitor Cst2B in the second pixel circuit 10B to maintain the gate potential of the driving transistor M3. This further reduces the rise in the gate potential of the driving transistor M3 in the second pixel circuit 10B, thereby reducing the decrease in the luminance of the second light-emitting element 11B. Consequently, this reduces the difference in brightness variation between the first light-emitting element 11A and the second light-emitting element 11B of different colors under strong light illumination in the first frame, improving the color cast problem under strong light illumination.

[0158] Similarly, if the degree of occlusion of the thin-film transistor T in the first pixel circuit 10A is less than the degree of occlusion of the thin-film transistor T in the second pixel circuit 10B, then under the same light intensity (e.g., the first light intensity or the second light intensity), the amount of light received by the thin-film transistor T in the first pixel circuit 10A is greater than the amount of light received by the thin-film transistor T in the second pixel circuit 10B. In this case, the capacitance value (e.g., the first capacitance value or the second capacitance value) of the first photosensitive capacitor Cst2A in the first pixel circuit 10A is set to be greater than the capacitance value (e.g., the first capacitance value or the second capacitance value) of the second photosensitive capacitor Cst2B in the second pixel circuit 10B, so as to reduce the difference in brightness change of the first light-emitting element 11A and the second light-emitting element 11B of different colors under strong light illumination in the first frame, and improve the color cast problem under strong light illumination. This will not be elaborated further here.

[0159] Continue to refer to Figure 11 and Figure 11Optionally, a difference between the second capacitance value and the first capacitance value of the first photosensitive capacitor Cst2A is a first difference, and a difference between the second capacitance value and the first capacitance value of the second photosensitive capacitor Cst2B is a second difference, and the first difference and the second difference are different.

[0160] The first difference is a change amount of the capacitance value of the first photosensitive capacitor Cst2A when the light intensity changes from the second light intensity to the first light intensity, and the first difference can reflect the sensitivity of the first photosensitive capacitor Cst2A to the light intensity to a certain extent.

[0161] The second difference is a change amount of the capacitance value of the second photosensitive capacitor Cst2B when the light intensity changes from the second light intensity to the first light intensity, and the second difference can reflect the sensitivity of the second photosensitive capacitor Cst2B to the light intensity to a certain extent.

[0162] Further, under the same change of light intensity (for example, the light intensity changes from the second light intensity to the first light intensity), the change amount (for example, the first difference) of the capacitance value of the first photosensitive capacitor Cst2A and the change amount (for example, the second difference) of the capacitance value of the second photosensitive capacitor Cst2B are different, so as to adjust the sensitivities of the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B in different color sub-pixels to the light intensity, reduce the difference in the first frame picture brightness change of different color sub-pixels under strong light, and improve the color cast problem of the display panel under strong light irradiation. Wherein, the greater the change range of the light amount received by the thin film transistor T in the sub-pixel, the greater the change amount of the capacitance value of the photosensitive capacitor Cst2, and vice versa.

[0163] For example, if the degree of shading of the thin film transistor T in the first pixel circuit 10A is greater than the degree of shading of the thin film transistor T in the second pixel circuit 10B, then under the same change range of the light intensity (for example, the light intensity changes from the second light intensity to the first light intensity), the change range of the amount of light received by the thin film transistor T in the first pixel circuit 10A is smaller than the change range of the amount of light received by the thin film transistor T in the second pixel circuit 10B, the change range of the leakage current generated by the thin film transistor T in the first pixel circuit 10A is smaller than the change range of the leakage current generated by the thin film transistor T in the second pixel circuit 10B, which can cause the change range of the rising degree of the gate potential of the driving transistor M3 in the first pixel circuit 10A to be smaller than the change range of the rising degree of the gate potential of the driving transistor M3 in the second pixel circuit 10B, and further cause the change range of the falling degree of the luminance of the first light emitting element 11A to be smaller than the change range of the falling degree of the luminance of the second light emitting element 11B. At this time, the change amount (for example, the first difference) of the capacitance value of the first photosensitive capacitor Cst2A can be set to be smaller than the change amount (for example, the second difference) of the capacitance value of the second photosensitive capacitor Cst2B, so that the change range of the ability of the first photosensitive capacitor Cst2A to maintain the gate potential of the driving transistor M3 in the first pixel circuit 10A is smaller than the change range of the ability of the second photosensitive capacitor Cst2B to maintain the gate potential of the driving transistor M3 in the second pixel circuit 10B. Thus, by adjusting the sensitivity of the first photosensitive capacitor Cst2A to the light intensity to be smaller than the sensitivity of the second photosensitive capacitor Cst2B to the light intensity, the ability of the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B to maintain the gate potential of the driving transistor M3 is matched with the change range of the amount of light received by the thin film transistor T in the first pixel circuit 10A and the second pixel circuit 10B, the difference in the first frame luminance of the first light emitting element 11A and the second light emitting element 11B under different light intensities is reduced, and the color cast problem is improved.

[0164] Similarly, if the degree of shading of the thin film transistor T in the first pixel circuit 10A is smaller than the degree of shading of the thin film transistor T in the second pixel circuit 10B, then under the same change range of the light intensity (for example, the light intensity changes from the second light intensity to the first light intensity), the change range of the amount of light received by the thin film transistor T in the first pixel circuit 10A is greater than the change range of the amount of light received by the thin film transistor T in the second pixel circuit 10B. At this time, the change amount (for example, the first difference) of the capacitance value of the first photosensitive capacitor Cst2A can be set to be smaller than the change amount (for example, the second difference) of the capacitance value of the second photosensitive capacitor Cst2B, so as to reduce the difference in the first frame luminance of the first light emitting element 11A and the second light emitting element 11B under different light intensities, and improve the color cast problem. Details are not described herein.

[0165] Optionally, the first light intensity and the second light intensity are both greater than a preset light intensity threshold, the photosensitive capacitor Cst2 has a fixed capacitance value under a third light intensity, and the third light intensity is less than or equal to the preset light intensity threshold. The fixed capacitance value of the first photosensitive capacitor Cst2A and the fixed capacitance value of the second photosensitive capacitor Cst2B are different.

[0166] Specifically, the preset light intensity threshold is used to distinguish between weak light and strong light conditions, and the third light intensity refers to the light intensity under the weak light condition, and the first light intensity and the second light intensity refer to the light intensity under the strong light condition.

[0167] Under the weak light condition (for example, the third light intensity), because the degrees of shielding of the thin film transistors T in the first pixel circuit 10A and the second pixel circuit 10B of the sub-pixels of different colors are different, the amounts of light received by the thin film transistors T in the first pixel circuit 10A and the second pixel circuit 10B are different, the sizes of the drain currents generated by the thin film transistors T in the first pixel circuit 10A and the second pixel circuit 10B are different, and then the brightness of the first light emitting element 11A and the second light emitting element 11B under the weak light condition is different, and the display panel under the weak light condition is color cast.

[0168] In the embodiment, the fixed capacitance value of the first photosensitive capacitor Cst2A and the fixed capacitance value of the second photosensitive capacitor Cst2B under the third light intensity are different, so that the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B located in the sub-pixels of different colors have different fixed capacitance values under the weak light condition, so as to balance the difference in the amounts of light received by the thin film transistors T in the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B under the weak light condition. Under the weak light condition, the greater the amount of light received by the thin film transistor T in the sub-pixel, the greater the fixed capacitance value of the photosensitive capacitor Cst2, and vice versa, so as to reduce the difference in the brightness of the sub-pixels of different colors under the weak light condition, and improve the color cast problem of the display panel under the weak light condition.

[0169] For example, if the degree of shading of the thin film transistor T in the first pixel circuit 10A is greater than the degree of shading of the thin film transistor T in the second pixel circuit 10B, under the same light intensity (for example, the third light intensity), the amount of light received by the thin film transistor T in the first pixel circuit 10A is less than the amount of light received by the thin film transistor T in the second pixel circuit 10B, and the leakage current generated by the thin film transistor T in the first pixel circuit 10A is less than the leakage current generated by the thin film transistor T in the second pixel circuit 10B, which can cause the rising degree of the gate potential of the driving transistor M3 in the first pixel circuit 10A to be less than the rising degree of the gate potential of the driving transistor M3 in the second pixel circuit 10B, and further cause the decrease degree of the luminance of the first light emitting element 11A to be less than the decrease degree of the luminance of the second light emitting element 11B. At this time, by setting the capacitance value (for example, a fixed capacitance value) of the first photosensitive capacitor Cst2A in the first pixel circuit 10A to be less than the capacitance value (for example, a fixed capacitance value) of the second photosensitive capacitor Cst2B in the second pixel circuit 10B, the ability of the first photosensitive capacitor Cst2A in the first pixel circuit 10A to maintain the gate potential of the driving transistor M3 is less than the ability of the second photosensitive capacitor Cst2B in the second pixel circuit 10B to maintain the gate potential of the driving transistor M3, so as to further reduce the rising degree of the gate potential of the driving transistor M3 in the second pixel circuit 10B and reduce the decrease degree of the luminance of the second light emitting element 11B, thereby reducing the difference in luminance change of the first light emitting element 11A and the second light emitting element 11B of different colors under weak light irradiation, and improving the color cast problem under weak light irradiation.

[0170] Similarly, if the degree of shading of the thin film transistor T in the first pixel circuit 10A is less than the degree of shading of the thin film transistor T in the second pixel circuit 10B, under the same light intensity (for example, the third light intensity), the amount of light received by the thin film transistor T in the first pixel circuit 10A is greater than the amount of light received by the thin film transistor T in the second pixel circuit 10B. At this time, by setting the capacitance value (for example, a fixed capacitance value) of the first photosensitive capacitor Cst2A in the first pixel circuit 10A to be greater than the capacitance value (for example, a fixed capacitance value) of the second photosensitive capacitor Cst2B in the second pixel circuit 10B, the difference in luminance change of the first light emitting element 11A and the second light emitting element 11B of different colors under weak light irradiation is reduced, and the color cast problem under weak light irradiation is improved. Details are not described herein.

[0171] Figure 11 Another partial cross-sectional structure schematic diagram of a display panel provided by an embodiment of the present application is shown in FIG. 6. Figure 11As shown, the optional photosensitive capacitor Cst2 further includes a photosensitive dielectric layer C20 between the first electrode C21 and the second electrode C22, and the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 are stacked on one side of the substrate 14. Along the thickness direction of the substrate 14, the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 overlap. The thickness of the photosensitive dielectric layer C20 in the first photosensitive capacitor Cst2A is different from the thickness of the photosensitive dielectric layer C20 in the second photosensitive capacitor Cst2B.

[0172] The specific structure of the photosensitive capacitor Cst2 can refer to the above-mentioned embodiments, which will not be described here.

[0173] In this embodiment, by adjusting the thickness of the photosensitive dielectric layer C20 in the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B in different color sub-pixels, the capacitance values of the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B are different.

[0174] The smaller the thickness of the photosensitive dielectric layer C20, the greater the fixed capacitance value, the first capacitance value and the second capacitance value of the photosensitive capacitor Cst2; the greater the thickness of the photosensitive dielectric layer C20, the smaller the fixed capacitance value, the first capacitance value and the second capacitance value of the photosensitive capacitor Cst2, but not limited to this.

[0175] For example, as shown in FIG. 2, the thickness of the photosensitive dielectric layer C20 in the first photosensitive capacitor Cst2A is greater than the thickness of the photosensitive dielectric layer C20 in the second photosensitive capacitor Cst2B, and the thickness of the photosensitive dielectric layer C20 in the first photosensitive capacitor Cst2A is greater than the thickness of the photosensitive dielectric layer C20 in the second photosensitive capacitor Cst2B. Figure 11 As shown, the thickness of the photosensitive dielectric layer C20 in the first photosensitive capacitor Cst2A is less than the thickness of the photosensitive dielectric layer C20 in the second photosensitive capacitor Cst2B, and the capacitance value of the first photosensitive capacitor Cst2A is less than the capacitance value of the second photosensitive capacitor Cst2B under the same light intensity, but not limited to this.

[0176] In other embodiments, the thickness of the photosensitive dielectric layer C20 in the first photosensitive capacitor Cst2A can also be less than the thickness of the photosensitive dielectric layer C20 in the second photosensitive capacitor Cst2B, and the present embodiment is not limited to this.

[0177] Continuing to refer to FIG. 2, Figure 11 As shown, the optional photosensitive capacitor Cst2 further includes a photosensitive dielectric layer C20 between the first electrode C21 and the second electrode C22, and the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 are stacked on one side of the substrate 14. Along the thickness direction of the substrate 14, the first electrode C21, the photosensitive dielectric layer C20 and the second electrode C22 overlap. In the overlapping area, along the thickness direction of the substrate 14, the distance between the first electrode C21 and the second electrode C22 in the first photosensitive capacitor Cst2A is a first distance, the distance between the first electrode C21 and the second electrode C22 in the second photosensitive capacitor Cst2B is a second distance, and the first distance and the second distance are different.

[0178] The specific structure of the photocapacitor Cst2 can be referred to in the above embodiment, and will not be repeated here.

[0179] In this embodiment, by adjusting the spacing between the first electrode C21 and the second electrode C22 in the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B located in different color sub-pixels, the capacitance values ​​of the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B are made different.

[0180] The smaller the distance between the first electrode C21 and the second electrode C22, the larger the fixed capacitance, the first capacitance, and the second capacitance of the photocapacitor Cst2; the larger the distance between the first electrode C21 and the second electrode C22, the smaller the fixed capacitance, the first capacitance, and the second capacitance of the photocapacitor Cst2, but this is not the only factor.

[0181] For example, such as Figure 12 As shown, the distance between the first electrode C21 and the second electrode C22 in the first photocapacitor Cst2A (i.e., the first distance) is smaller than the distance between the first electrode C21 and the second electrode C22 in the second photocapacitor Cst2B (i.e., the second distance). Therefore, under the same light intensity, the capacitance value of the first photocapacitor Cst2A is greater than the capacitance value of the second photocapacitor Cst2B, but it is not limited to this.

[0182] In other embodiments, the distance between the first electrode C21 and the second electrode C22 in the first photocapacitor Cst2A may be set to be smaller than the distance between the first electrode C21 and the second electrode C22 in the second photocapacitor Cst2B. This embodiment of the present invention does not specifically limit this.

[0183] Furthermore, such as Figure 12 As shown, the distance between the first electrode C21 and the second electrode C22 can be adjusted by adjusting the film thickness between the first electrode C21 and the second electrode C22. The greater the film thickness between the first electrode C21 and the second electrode C22, the greater the distance between the first electrode C21 and the second electrode C22.

[0184] For example, such as Figure 12 As shown, the thickness of the photosensitive dielectric layer C20 in the first photosensitive capacitor Cst2A is less than the thickness of the photosensitive dielectric layer C20 in the second photosensitive capacitor Cst2B, so that the distance between the first electrode C21 and the second electrode C22 in the first photosensitive capacitor Cst2A (i.e., the first distance) is less than the distance between the first electrode C21 and the second electrode C22 in the second photosensitive capacitor Cst2B (i.e., the second distance), but it is not limited to this.

[0185] Figure 13 A partial cross-sectional structural diagram of another display panel provided in an embodiment of the present invention is shown below. Figure 13 As shown, optionally, along the thickness direction of the substrate 14, the first electrode C21 of the first photocapacitor Cst2A and the first electrode C21 of the second photocapacitor Cst2B are located in different film layers; and / or, the second electrode C22 of the first photocapacitor Cst2A and the second electrode C22 of the second photocapacitor Cst2B are located in different film layers.

[0186] In this embodiment, the distance between the first electrode C21 and the second electrode C22 can be adjusted by adjusting the position of the film layer between the first electrode C21 and the second electrode C22. The more film layers there are between the first electrode C21 and the second electrode C22, the greater the distance between the first electrode C21 and the second electrode C22.

[0187] For example, such as Figure 13 As shown, the first electrode C21 of the first photocapacitor Cst2A and the first electrode C21 of the second photocapacitor Cst2B are located in the same film layer. Along the thickness direction of the substrate 14, the second electrode C22 of the first photocapacitor Cst2A is located on the side of the second electrode C22 of the second photocapacitor Cst2B closer to the substrate 14, such that the number of film layers between the first electrode C21 and the second electrode C22 in the first photocapacitor Cst2A is less than the number of film layers between the first electrode C21 and the second electrode C22 in the second photocapacitor Cst2B. This achieves that the distance between the first electrode C21 and the second electrode C22 in the first photocapacitor Cst2A (i.e., the first distance) is less than the distance between the first electrode C21 and the second electrode C22 in the second photocapacitor Cst2B (i.e., the second distance), but it is not limited to this.

[0188] Figure 3 This is a partial cross-sectional structural diagram of another display panel provided in an embodiment of the present invention, as shown below. Figures 3-6 As shown, optionally, the photocapacitor Cst2 further includes a photosensitive dielectric layer C20 located between the first electrode C21 and the second electrode C22. The first electrode C21, the photosensitive dielectric layer C20, and the second electrode C22 are stacked on one side of the substrate 14. Along the thickness direction of the substrate 14, there is an overlap region between the first electrode C21, the photosensitive dielectric layer C20, and the second electrode C22. Along the thickness direction of the substrate 14, the overlap area between the first electrode C21 and the second electrode C22 in the first photocapacitor Cst2A is S11, and the overlap area between the first electrode C21 and the second electrode C22 in the second photocapacitor Cst2B is S12, where S11 ≠ S12.

[0189] The specific structure of the photocapacitor Cst2 can be referred to in the above embodiment, and will not be repeated here.

[0190] In this embodiment, by adjusting the overlapping area between the first electrode C21 and the second electrode C22 in the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B located in different color sub-pixels, the capacitance values ​​of the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B are made different.

[0191] The larger the overlap area between the first electrode C21 and the second electrode C22, the larger the fixed capacitance, the first capacitance, and the second capacitance of the photocapacitor Cst2; the smaller the overlap area between the first electrode C21 and the second electrode C22, the smaller the fixed capacitance, the first capacitance, and the second capacitance of the photocapacitor Cst2, but this is not limited to these two conditions.

[0192] For example, such as Figures 2-13 As shown, along the thickness direction of the substrate 14, the overlap area S11 between the first electrode C21 and the second electrode C22 in the first photocapacitor Cst2A is smaller than the overlap area S12 between the first electrode C21 and the second electrode C22 in the second photocapacitor Cst2B. Therefore, under the same light intensity, the capacitance value of the first photocapacitor Cst2A is smaller than the capacitance value of the second photocapacitor Cst2B, but it is not limited to this.

[0193] In other embodiments, the overlap area S11 between the first electrode C21 and the second electrode C22 in the first photocapacitor Cst2A may be set to be greater than the overlap area S12 between the first electrode C21 and the second electrode C22 in the second photocapacitor Cst2B. This embodiment of the present invention does not specifically limit this.

[0194] In other embodiments, the capacitance values ​​of the first photosensitive capacitor Cst2A and the second photosensitive capacitor Cst2B located in different color sub-pixels can be made different by adjusting the material of the photosensitive dielectric layer C20. The embodiments of the present invention do not specifically limit this.

[0195] It should be noted that the capacitance value of the photosensitive capacitor Cst2 in different color sub-pixels (e.g., including a fixed capacitance value, a first capacitance value, and a second capacitance value) can be set based on the material of the light-emitting layer in different color sub-pixels, the magnitude of the driving current in different color sub-pixels, and the degree of shading of the thin-film transistor T in different color sub-pixels. It is understood that display panels from different manufacturers or of different models may differ in material selection, driving current design, and metal layer layout, resulting in different relationships between the capacitance values ​​of the photosensitive capacitor Cst2 in different color sub-pixels. This embodiment of the invention does not specifically limit this.

[0196] In addition, the specific structure of the pixel circuit 10 is not limited to the specific circuit structure provided in the above embodiment, and a person skilled in the art can set the specific structure of the pixel circuit 10 according to actual needs.

[0197] Optionally, as shown in Figures 2-13 The pixel circuit 10 can also include a light-emitting reset transistor M7, the gate of the light-emitting reset transistor M7 is connected with the second scan signal line S2, the first electrode M71 of the light-emitting reset transistor M7 is electrically connected with the reference signal line Vref, and the second electrode M72 of the light-emitting reset transistor M7 is electrically connected with the anode of the light-emitting element 11.

[0198] The driving process of the pixel circuit 10 can include:

[0199] In the data writing stage, the second scan signal on the second scan signal line S2 makes the light-emitting reset transistor M7 conductive, and the light-emitting reset transistor M7 writes the reference voltage on the reference signal line Vref to the anode of the light-emitting element 11, resets the anode potential of the light-emitting element 11, and can reduce the influence of the anode voltage of the light-emitting element 11 in the previous frame on the anode voltage of the light-emitting element 11 in the next frame, thereby improving display uniformity.

[0200] Continuing to refer to Figure 14 Optionally, the pixel circuit 10 can also include a first light-emitting control transistor M1 and a second light-emitting control transistor M6, the driving transistor M3, the first light-emitting control transistor M1, the second light-emitting control transistor M6 and the light-emitting element 11 are connected in series between the first power signal line PVDD and the second power signal line PVEE, and the gate of the first light-emitting control transistor M1 and the gate of the second light-emitting control transistor M6 are both connected with the light-emitting control signal line EM.

[0201] The driving process of the pixel circuit 10 can include:

[0202] In the light-emitting stage, the light-emitting control signal on the light-emitting control signal line EM makes the first light-emitting control transistor M1 and the second light-emitting control transistor M6 conductive, so as to drive the light-emitting element 11 to emit light through the driving transistor M3, thereby realizing the light-emitting and display functions of the display panel.

[0203] Further, the film layer structure of the display panel is not limited to the specific film layer structure provided in the above embodiment, and a person skilled in the art can set the film layer structure of the display panel according to actual needs.

[0204] Illustratively, as shown in Figure 14 Optionally, a buffer layer 15 is arranged between the substrate 14 and the active layer T1, and the buffer layer 15 can play a buffering and isolating role.

[0205] Continuing to refer to Figure 14Optionally, the buffer layer 15 is sequentially stacked with a gate insulating layer 17, a first interlayer insulating layer 16, a second interlayer insulating layer 18 and a planarization layer 19 on the side away from the substrate 14. In the thickness direction of the substrate 14, the gate insulating layer 17 is located between the active layer T1 and the gate T2, the first interlayer insulating layer 16 is located between the third electrode C11 and the fourth electrode C12, the second interlayer insulating layer 18 is located between the fourth electrode C12 and the first power signal line PVDD, and the planarization layer 19 is located between the first power signal line PVDD and the light emitting element 11.

[0206] The gate insulating layer 17, the first interlayer insulating layer 16 and the second interlayer insulating layer 18 can be inorganic film layers, and the planarization layer 19 can be an organic film layer.

[0207] Based on the same inventive concept, the embodiments of the present application also provide a display device, ​ The structural schematic diagram of the display device provided by the embodiments of the present application is shown in ​ The display device 30 includes the display panel 31 described in any of the embodiments of the present application, and thus the display device 30 provided by the embodiments of the present application has the technical effects of the technical solutions in any of the above embodiments. The same or corresponding structures and explanations of terms are not repeated here.

[0208] The display device 30 provided by the embodiments of the present application can be ​ The display device 30 provided by the embodiments of the present application can be

[0209] It should be understood that the various forms of flow shown above can be used to reorder, add or delete steps. For example, the steps described in the present application can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solutions of the present application can be achieved, and the present application is not limited in this regard.

[0210] The above detailed description does not constitute a limitation on the scope of protection of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A display panel, characterized by, The pixel circuit comprises a driving transistor and a photosensitive capacitor; The driving transistor is configured to provide a driving current to the light emitting element; The photosensitive capacitor comprises a first electrode and a second electrode, the first electrode is electrically connected with a gate electrode of the driving transistor, and the second electrode is electrically connected with a first signal line; The first signal line is configured to transmit a first voltage signal, and the first voltage signal is a fixed voltage signal; The photosensitive capacitor has a first capacitance value under a first light intensity, and has a second capacitance value under a second light intensity; The first light intensity is less than the second light intensity, and the first capacitance value is less than the second capacitance value; The first light intensity and the second light intensity are both greater than a preset light intensity threshold value; The photosensitive capacitor has a fixed capacitance value under a third light intensity, the third light intensity is less than or equal to the preset light intensity threshold value, and the fixed capacitance value is less than the first capacitance value.

2. The display panel of claim 1, wherein the display panel further comprises a first power signal line; The driving transistor is connected in series between the first power signal line and the light emitting element; The first signal line and the first power signal line are the same signal line.

3. The display panel of claim 1, wherein the preset light intensity threshold value is A, 8000 lux≤A≤12000 lux.

4. The display panel of claim 1, wherein the display panel further comprises a first power signal line, and the driving transistor is connected in series between the first power signal line and the light emitting element; The pixel circuit further comprises a storage capacitor; The storage capacitor comprises a third electrode and a fourth electrode, the third electrode is electrically connected with the gate electrode of the driving transistor, and the fourth electrode is electrically connected with the first power signal line; The fixed capacitance value is less than a capacitance value of the storage capacitor.

5. The display panel of claim 1, wherein the display panel further comprises a substrate; The photosensitive capacitor is located on one side of the substrate, and further comprises a photosensitive dielectric layer located between the first electrode and the second electrode; The first electrode, the photosensitive dielectric layer and the second electrode are stacked on one side of the substrate; Along the thickness direction of the substrate, the first electrode, the photosensitive dielectric layer and the second electrode have an overlapping area.

6. The display panel of claim 5, wherein along the thickness direction of the substrate, the overlapping area of the first electrode, the photosensitive dielectric layer and the second electrode is equal to the area of the first electrode and / or the second electrode.

7. The display panel of claim 5, wherein the photosensitive dielectric layer has a first dielectric constant under the first light intensity, and has a second dielectric constant under the second light intensity; The first dielectric constant is less than the second dielectric constant.

8. The display panel of claim 5, wherein ​ ​ ​ ​ ​ ​ ​ The driving transistor is connected in series between the first power signal line and the light emitting element; The pixel circuit further comprises a storage capacitor; The storage capacitor comprises a third electrode and a fourth electrode, the third electrode is electrically connected with the gate of the driving transistor, and the fourth electrode is electrically connected with the first power signal line; The third electrode and the fourth electrode are arranged in a stacked manner on one side of the substrate, and the fourth electrode is located on the side of the third electrode away from the substrate; In the thickness direction of the substrate, the spacing between the first electrode and the second electrode is greater than the spacing between the third electrode and the fourth electrode.

9. The display panel of claim 5, wherein, The driving transistor is connected in series between the first power signal line and the light emitting element; The pixel circuit further comprises a storage capacitor; The storage capacitor comprises a third electrode and a fourth electrode, the third electrode is electrically connected with the gate of the driving transistor, and the fourth electrode is electrically connected with the first power signal line; The third electrode and the fourth electrode are arranged in a stacked manner on one side of the substrate, and the fourth electrode is located on the side of the third electrode away from the substrate; In the thickness direction of the substrate, the overlapping area between the first electrode and the second electrode is S1, and the overlapping area between the third electrode and the fourth electrode is S2, S1 < S2.

10. The display panel of claim 5, wherein, The driving transistor is connected in series between the first power signal line and the light emitting element; The pixel circuit further comprises a storage capacitor; The storage capacitor comprises a third electrode and a fourth electrode, the third electrode is electrically connected with the gate of the driving transistor, and the fourth electrode is electrically connected with the first power signal line; The third electrode and the fourth electrode are arranged in a stacked manner on one side of the substrate, and the fourth electrode is located on the side of the third electrode away from the substrate; The first electrode and the third electrode are located in the same film layer, and / or the second electrode and the fourth electrode are located in the same film layer.

11. The display panel of claim 5, wherein, The driving transistor is connected in series between the first power signal line and the light emitting element; The pixel circuit further comprises a storage capacitor; The storage capacitor comprises a third electrode and a fourth electrode, the third electrode is electrically connected with the gate of the driving transistor, and the fourth electrode is electrically connected with the first power signal line; The third electrode and the fourth electrode are arranged in a stacked manner on one side of the substrate, and the fourth electrode is located on the side of the third electrode away from the substrate; The first electrode and the third electrode are the same electrode plate; The second electrode and the fourth electrode are the same electrode plate.

12. The display panel of claim 11, wherein, In the direction perpendicular to the display panel, the photo-sensitive dielectric layer covers at least part of the edge of the fourth electrode.

13. The display panel of claim 1, wherein, The pixel circuit comprises a first pixel circuit and a second pixel circuit; The light-emitting element includes a first light-emitting element and a second light-emitting element, the first pixel circuit and the first light-emitting element are electrically connected, the second pixel circuit and the second light-emitting element are electrically connected, and the light-emitting colors of the first light-emitting element and the second light-emitting element are different; The photosensitive capacitor in the first pixel circuit is a first photosensitive capacitor; The photosensitive capacitor in the second pixel circuit is a second photosensitive capacitor; The first capacitance value of the first photosensitive capacitor and the first capacitance value of the second photosensitive capacitor are different, and / or the second capacitance value of the first photosensitive capacitor and the second capacitance value of the second photosensitive capacitor are different.

14. The display panel of claim 13, wherein, The difference between the second capacitance value and the first capacitance value of the first photosensitive capacitor is a first difference; The difference between the second capacitance value and the first capacitance value of the second photosensitive capacitor is a second difference; The first difference and the second difference are different.

15. The display panel of claim 13, wherein, The first light intensity and the second light intensity are both greater than a preset light intensity threshold; The photosensitive capacitor has a fixed capacitance value under a third light intensity, and the third light intensity is less than or equal to the preset light intensity threshold; The fixed capacitance value of the first photosensitive capacitor and the fixed capacitance value of the second photosensitive capacitor are different.

16. The display panel of claim 13, wherein, The photosensitive capacitor further includes a photosensitive dielectric layer between the first electrode and the second electrode; The first electrode, the photosensitive dielectric layer, and the second electrode are stacked on one side of a substrate; Along the thickness direction of the substrate, the first electrode, the photosensitive dielectric layer, and the second electrode have an overlapping region; The thickness of the photosensitive dielectric layer in the first photosensitive capacitor and the thickness of the photosensitive dielectric layer in the second photosensitive capacitor are different.

17. The display panel of claim 13, wherein, The photosensitive capacitor further includes a photosensitive dielectric layer between the first electrode and the second electrode; The first electrode, the photosensitive dielectric layer, and the second electrode are stacked on one side of a substrate; Along the thickness direction of the substrate, the first electrode, the photosensitive dielectric layer, and the second electrode have an overlapping region; In the overlapping region, along the thickness direction of the substrate, the distance between the first electrode and the second electrode in the first photosensitive capacitor is a first distance, and the distance between the first electrode and the second electrode in the second photosensitive capacitor is a second distance; The first distance and the second distance are different.

18. The display panel of claim 13, wherein, The photosensitive capacitor further includes a photosensitive dielectric layer between the first electrode and the second electrode; The first electrode, the photosensitive dielectric layer, and the second electrode are stacked on one side of a substrate; Along the thickness direction of the substrate, the first electrode, the photosensitive dielectric layer, and the second electrode have an overlapping region; An overlapping area between the first electrode and the second electrode in the first photosensitive capacitor is S11, and an overlapping area between the first electrode and the second electrode in the second photosensitive capacitor is S12 along a thickness direction of the substrate, S11≠S12.

19. A display device comprising: The display panel of any one of claims 1-18.

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