Silicon wafer positioning calibration method, device, equipment and storage medium

Abstract

The present disclosure provides a positioning and calibration method, device, equipment and storage medium for silicon wafers. The method includes: S1, controlling a robotic arm to grab the silicon wafer and place the silicon wafer on a rotating disk according to a preset movement route; S2, driving the rotating disk to rotate the silicon wafer at a preset speed, and transmitting and receiving optical signals through a first optical sensor and a second optical sensor; S3, when the optical signal of the first optical sensor disappears for a duration greater than a threshold during the rotation process, the offset coordinates of the center of the silicon wafer are determined according to the optical signals of the first optical sensor and the second optical sensor; S4, according to the offset coordinates, the position of the silicon wafer is adjusted using a robotic arm; after the adjustment is completed, return to execute step S2 until the duration of signal disappearance is no greater than the threshold. According to the scheme of the present disclosure, the silicon wafer can be accurately adjusted to the rotation center to achieve high-speed and stable rotation of the silicon wafer, thereby achieving a higher yield.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a method, device, equipment and storage medium for positioning and calibrating a silicon wafer. Background Art

[0002] In the heat treatment process, the silicon wafer rotates at a constant speed in the rapid heat treatment equipment to achieve consistent surface temperature of the silicon wafer, providing a guarantee for the formation of a uniform and dense oxide layer; the faster the rotation speed, the better the consistency of the silicon wafer surface temperature. When the speed is raised to a certain height, if the silicon wafer is not accurately placed at the center of rotation and the eccentricity is large, the silicon wafer will be thrown out and slippage will occur. Summary of the invention

[0003] The present disclosure provides a silicon wafer positioning calibration method, device, equipment and storage medium to solve or alleviate one or more technical problems in the prior art.

[0004] In a first aspect, the present disclosure provides a method for positioning and calibrating a silicon wafer, comprising:

[0005] S1, controlling the robot arm to grab the silicon wafer and place the silicon wafer on the rotating disk according to a preset movement route;

[0006] S2, driving the rotating disk to rotate the silicon wafer at a preset speed, and transmitting and receiving optical signals through the first optical sensor and the second optical sensor; wherein the first optical sensor is arranged at the edge of the theoretical position of the silicon wafer; the second optical sensor is arranged at the edge of the rotating disk, and the edge of the rotating disk has a light-shielding structure that intermittently transmits light during rotation;

[0007] S3, when the signal disappearance time length of the optical signal of the first optical sensor during the rotation process is greater than a threshold, determine the offset coordinates of the center of the silicon wafer according to the optical signals of the first optical sensor and the second optical sensor; wherein the rotation center of the rotating disk is the coordinate origin;

[0008] S4. According to the offset coordinates, the position of the silicon wafer is adjusted using a robotic arm; after the adjustment is completed, the process returns to step S2 and continues until the signal disappears for a duration no longer than a threshold.

[0009] In a second aspect, the present disclosure provides a silicon wafer positioning and calibration device, comprising:

[0010] The transmission control module is used to execute step S1: control the robot arm to grab the silicon wafer and place the silicon wafer on the rotating disk according to a preset movement route;

[0011] The chamber control module is used to execute step S2: drive the rotating disk to rotate the silicon wafer at a preset speed, and transmit and receive optical signals through the first optical sensor and the second optical sensor; wherein the first optical sensor is arranged at the edge of the theoretical position of the silicon wafer; the second optical sensor is arranged at the edge of the rotating disk, and the edge of the rotating disk has a light shielding structure that intermittently transmits light during rotation;

[0012] A coordinate calculation module, used to execute step S3: when the optical signal of the first optical sensor disappears for a time period greater than a threshold during the rotation process, determine the offset coordinates of the center of the silicon wafer according to the optical signals of the first optical sensor and the second optical sensor; wherein the rotation center of the rotating disk is the coordinate origin;

[0013] An adjustment module, used to execute step S4: adjusting the position of the silicon wafer using a robotic arm according to the offset coordinates;

[0014] The loop module is used to return to execute step S2 until the signal disappears for a duration not greater than a threshold.

[0015] In a third aspect, the present disclosure provides a silicon wafer position adjustment system, comprising:

[0016] The heat treatment chamber includes a rotating disk and a heating assembly, wherein the rotating disk is used to drive the silicon wafer to rotate, and the rotating disk supports the silicon wafer through supporting pins;

[0017] A robotic arm is arranged outside the chamber and is used to move and adjust the position of the silicon wafer;

[0018] The lower end surface of the heat treatment chamber is provided with a first optical sensor transmitting end and a second optical sensor transmitting end, and the transmitting end is used to send out an optical signal; the upper end surface of the heat treatment chamber is provided with a first optical sensor receiving end and a second optical sensor receiving end, and the receiving end is used to receive the optical signal sent out by the corresponding transmitting end;

[0019] The first optical sensor is arranged at the edge of the theoretical position of the silicon wafer, and the second optical sensor is arranged at the edge of the rotating disk. The edge of the rotating disk has a light-shielding structure that intermittently transmits light during rotation.

[0020] In a fourth aspect, an electronic device is provided, including:

[0021] at least one processor; and

[0022] a memory communicatively connected to the at least one processor; wherein,

[0023] The memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to execute any method in the embodiments of the present disclosure.

[0024] In a fifth aspect, a non-transitory computer-readable storage medium storing computer instructions is provided, wherein the computer instructions are used to cause the computer to execute any method according to the embodiments of the present disclosure.

[0025] In a sixth aspect, a computer program product is provided, comprising a computer program, which, when executed by a processor, implements any method according to the embodiments of the present disclosure.

[0026] The beneficial effects of the technical solution provided by the present disclosure include at least: the silicon wafer can be accurately adjusted to the rotation center, so as to achieve high-speed and stable rotation of the silicon wafer, thereby achieving a higher yield.

[0027] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present disclosure, nor is it intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments provided according to the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0029] Figure 1 is a structural schematic diagram of a silicon wafer position adjustment system provided according to an embodiment of the present disclosure;

[0030] Figure 2 It is a flow chart of a method for positioning and calibrating a silicon wafer provided according to an embodiment of the present disclosure;

[0031] Figure 3 is a position diagram of a silicon wafer on a rotating disk according to an embodiment of the present disclosure;

[0032] Figure 4 is a flow chart of precise positioning of a single silicon wafer provided according to an embodiment of the present disclosure;

[0033] Figure 5 is a structural schematic diagram of a silicon wafer positioning and calibration device provided according to an embodiment of the present disclosure;

[0034] Figure 6 is a block diagram of an electronic device for implementing an embodiment of the present disclosure.

[0035] Explanation of the reference numerals: 10, chamber; 11, rotating disk; 12, supporting pin; 13, silicon wafer; 20, robotic arm; 14a, first optical sensor transmitting end; 14b, first optical sensor receiving end; 15a, second optical sensor transmitting end; 15b, second optical sensor receiving end. DETAILED DESCRIPTION

[0036] The present disclosure will be further described in detail below with reference to the accompanying drawings. The same reference numerals in the accompanying drawings represent elements with the same or similar functions. Although various aspects of the embodiments are shown in the accompanying drawings, the drawings are not necessarily drawn to scale unless otherwise specified.

[0037] In addition, in order to better illustrate the present disclosure, numerous specific details are given in the following specific embodiments. It should be understood by those skilled in the art that the present disclosure can also be implemented without certain specific details. In some examples, methods, means, components and circuits well known to those skilled in the art are not described in detail in order to highlight the main purpose of the present disclosure.

[0038] In the related art, in the rapid thermal processing chamber, the silicon wafer is placed above the rotating structure and follows the rotation to achieve uniform heating, but the silicon wafer is not placed at the exact center of rotation, or it is easy to cause slicing if it exceeds a certain eccentric distance. The reasons may include the following aspects: 1. Due to the inherent errors of the robotic arm and the rotating system, the actual placement position is easily inaccurate. For example, if the cantilever of the robotic arm is too long, the positioning accuracy and repeated positioning accuracy of its execution end are poor, which can easily cause the actual silicon wafer to be placed at a large eccentric distance. 2. During mass production, the relative positions of different silicon wafers at the execution end of the robotic arm are slightly different, and it is difficult to find an optimal moving position among the differences between different silicon wafers. 3. The placement position of the robotic arm is usually adjusted by manual adjustment and naked eye observation, so that the robotic arm places the silicon wafer at the center of rotation, and this adjustment position is set as the position of the subsequent batch of silicon wafers on the rotating platform, which is time-consuming, labor-intensive and has low accuracy.

[0039] In order to at least partially solve one or more of the above-mentioned problems and other potential problems, an embodiment of the present invention provides a positioning and calibration method for a silicon wafer. By using the technical solution of the embodiment of the present invention, the position of the silicon wafer on the rotating axis is collected, monitored and adjusted by two optical sensors, so that the silicon wafer can rotate stably at a higher speed without scratching.

[0040] Figure 1 Schematic diagram of a silicon wafer position adjustment system provided by an embodiment of the present disclosure. Figure 1 As shown, the system includes:

[0041] The heat treatment chamber 10 includes a rotating disk 11 and a heating assembly. The rotating disk 11 is used to drive the silicon wafer 13 to rotate. The rotating disk 11 supports the silicon wafer 13 through supporting pins 12.

[0042] A robot arm 20 is disposed outside the chamber 10 and is used to move and adjust the position of the silicon wafer 13;

[0043] The lower end surface of the heat treatment chamber is provided with a first optical sensor transmitting end 14a and a second optical sensor transmitting end 15a, and the transmitting ends are used to send optical signals; the upper end surface of the heat treatment chamber is provided with a first optical sensor receiving end 14b and a second optical sensor receiving end 15b, and the receiving ends are used to receive optical signals sent by the corresponding transmitting ends;

[0044] The first optical sensor is arranged at the edge of the theoretical position of the silicon wafer, and the second optical sensor is arranged at the edge of the rotating disk 11. The edge of the rotating disk 11 has a light shielding structure that intermittently transmits light during rotation.

[0045] In the disclosed embodiment, the rotation center of the rotating disk 11 coincides with the center of the theoretical silicon wafer position, and the theoretical silicon wafer position is a circular area with the rotation center as the center and the silicon wafer diameter as the diameter. The receiving end 14b and the transmitting end 14a of the first optical sensor are placed directly above and directly below the edge of the theoretical silicon wafer position, respectively. If there is no obstruction between the two, the receiving end 14b will receive the optical signal from the transmitting end 14a. If there is an obstruction in the middle, the receiving end 14b will not receive the optical signal from the transmitting end 14a. Therefore, when part of the silicon wafer 13 is outside the theoretical silicon wafer position, the silicon wafer will intermittently block the optical signal of the first optical sensor during rotation.

[0046] The edge of the rotating disk 11 has a light shielding structure that intermittently transmits light during rotation, such as a toothed structure evenly distributed along the outer edge of the rotating disk, which may be sharp teeth, square teeth, or trapezoidal teeth, etc. A second optical sensor is placed at any position on the outer edge of the rotating disk 11. When the optical signal emitted by the transmitting end 15a of the second optical sensor falls on the teeth on the outer edge of the rotating disk, the receiving end 15b cannot receive the signal. When the light source emitted by the transmitting end 15a of the second optical sensor falls outside the teeth on the outer edge of the rotating disk, the receiving end 15b will receive the signal.

[0047] The robotic arm can be a 4-axis linkage robotic arm to achieve precise handling of silicon wafers.

[0048] Figure 2 1 is a flow chart of a silicon wafer positioning calibration method provided by an embodiment of the present disclosure. The method can be performed on the above-mentioned silicon wafer position adjustment system, such as Figure 2 As shown, the method comprises the following steps:

[0049] S1. Control the robot arm to grab the silicon wafer and place the silicon wafer on the rotating disk according to a preset movement route.

[0050] In the disclosed embodiment, the preset motion path is used to place the silicon wafer on the rotating disk and align the center of the silicon wafer with the rotation center of the rotating disk. In actual operation, the preset motion path needs to be adjusted and calibrated to accurately align the center of the silicon wafer with the rotation center.

[0051] S2. Drive the rotating disk to rotate the silicon wafer at a preset speed, and transmit and receive optical signals through the first optical sensor and the second optical sensor.

[0052] The first optical sensor is arranged at the edge of the theoretical position of the silicon wafer, and the second optical sensor is arranged at the edge of the rotating disk, and the edge of the rotating disk has a light shielding structure that intermittently transmits light during rotation.

[0053] When the silicon wafer rotates, the part of the silicon wafer that deviates from the theoretical position of the silicon wafer will block the light source of the first optical sensor during each rotation. The light shielding structure of the rotating disk will block the light source of the second optical sensor multiple times during each rotation. The first optical sensor is used to determine the arc length of the deviated part. The second optical sensor is used to determine the rotation angle of the rotating disk and the silicon wafer. The more light shielding structures there are around the edge of the rotating disk, the higher the accuracy of the measured rotation angle.

[0054] S3. When the duration of signal disappearance of the optical signal of the first optical sensor during the rotation process is greater than a threshold, determine the offset coordinates of the center of the silicon wafer according to the optical signals of the first optical sensor and the second optical sensor.

[0055] The rotation center of the rotating disk is the coordinate origin.

[0056] The center of the silicon wafer is the center point of the silicon wafer and also the center of its circle. When the arc length of the deviated part of the silicon wafer does not exceed half the circumference of the silicon wafer, the greater the degree of deviation, the longer the time of blocking the light source of the first optical sensor, that is, the duration of signal disappearance of the first optical sensor is related to the arc length of the deviated part of the silicon wafer. If the duration of signal disappearance is less than the threshold, it means that the degree of deviation of the silicon wafer meets the requirements, and there will be no sliding phenomenon, and no adjustment is required. Otherwise, the position of the silicon wafer needs to be adjusted. The first optical sensor can determine the arc length of the deviated part, and the second optical sensor can determine the rotation angle of the rotating disk and the silicon wafer. The offset coordinates of the center of the silicon wafer can be calculated through the two. The offset coordinates are based on the rotation center of the rotating disk as the coordinate origin.

[0057] S4. According to the offset coordinates, the position of the silicon wafer is adjusted using a robotic arm; after the adjustment is completed, the process returns to step S2 and continues until the signal disappears for a duration no longer than a threshold.

[0058] In the disclosed embodiment, after the offset coordinates are determined, the offset coordinates are input to the robotic arm so that the robotic arm can move the center of the silicon wafer from the current position, i.e., the position of the offset coordinates, to the coordinate origin, i.e., the rotation center.

[0059] After the robot adjusts the position of the silicon wafer, it can return to step S2, use the rotating disk to drive the silicon wafer to rotate again, and use the first optical sensor to determine whether the signal disappearance time is greater than the threshold, so as to judge whether the adjusted silicon wafer position meets the requirements. If it still does not meet the requirements, continue to execute the subsequent steps to complete this cycle and adjust the silicon wafer position again. If the requirements are met, end the steps and complete the adjustment. Considering that there are errors in the transmission system of the robot, if the errors are large, it may be necessary to execute multiple rounds of steps S2 to S4 before the silicon wafer position meets the requirements.

[0060] According to the solution of the embodiment of the present disclosure, the center of the silicon wafer can be accurately positioned by an optical sensor and the error of the transmission system can be overcome, so that the center of the silicon wafer can be adjusted to the rotation center, thereby achieving high-speed and stable rotation of the silicon wafer, which helps to improve the yield.

[0061] In a possible implementation, step S3: when the signal disappearance time length of the optical signal of the first optical sensor during the rotation process is greater than a threshold, determining the offset coordinates of the center of the silicon wafer according to the optical signals of the first optical sensor and the second optical sensor, further comprises the steps of:

[0062] S3-1. When the optical signal of the first optical sensor disappears for a duration greater than a threshold during the rotation process, determine the offset distance between the center of the silicon wafer and the rotation center according to the duration of the signal disappearance and the duration of the signal existence. The optical signal of the first optical sensor disappears due to being blocked by a portion of the silicon wafer that exceeds a theoretical position of the silicon wafer.

[0063] S3-2, determining the deflection angle between the center of the silicon wafer and the center of rotation according to the number of times the optical signal of the second optical sensor disappears during the rotation process, wherein the optical signal of the second optical sensor disappears due to being blocked by the light shielding structure.

[0064] S3-3. Determine the offset coordinates of the center of the silicon wafer based on the offset distance and the deflection angle.

[0065] In the embodiment of the present disclosure, when the rotation speed of the rotating disk reaches a preset speed, the signal disappearance duration of each time the optical signal of the first optical sensor disappears during the rotation process is obtained. Each time the silicon wafer rotates one circle, the light source of the first optical sensor is blocked once, so that the receiving end cannot obtain the light source emitted by the transmitting end, that is, a signal disappearance occurs. The signal disappearance duration corresponds to the arc length of the silicon wafer beyond the theoretical position of the silicon wafer.

[0066] When the rotating disk starts to rotate, the number of rotations of the rotating disk and the rotation angle of the last rotation can be obtained through the number of times the optical signal of the second optical sensor disappears during the rotation process and the number of light shielding structures.

[0067] The offset distance and deflection angle can be calculated, and the offset coordinates of the center of the silicon wafer can be further calculated based on the offset distance and deflection angle.

[0068] According to the solution of the embodiment of the present disclosure, the offset distance between the center of the silicon wafer and the rotation center is determined by the first optical sensor, and the deflection angle between the center of the silicon wafer and the rotation center is determined by the second optical sensor, thereby obtaining the offset coordinates of the center of the silicon wafer.

[0069] In a possible implementation, step S3-1: determining the offset distance between the center of the silicon wafer and the rotation center according to the signal disappearance duration and the signal existence duration, further includes:

[0070] The arc of the blocking arc is determined according to the disappearance time of the blocked signal of the first optical sensor and the existence time of the unblocked signal. The blocking arc is the part of the silicon wafer that exceeds the theoretical position of the silicon wafer.

[0071] The offset distance between the center of the silicon wafer and the rotation center of the rotating disk is determined according to the curvature of the shielding arc and the diameter of the silicon wafer.

[0072] In the embodiment of the present disclosure, Figure 3 In the example shown, the rotation center position of the rotating disk is O1, the solid circle is the theoretical position of the silicon wafer, the dotted circle is the actual placement position of the silicon wafer, the diameter of the silicon wafer is d, and the center point of the silicon wafer is O2. The bottom tip of the triangle shown by A1 is the position of the first optical sensor, and the left tip of the triangle shown by A2 is the position of the second optical sensor. When the silicon wafer rotates counterclockwise, the silicon wafer from C1 to C2 that exceeds the theoretical position of the silicon wafer will block the optical sensor A1, and there will be no signal at the receiving end of the optical sensor A1. The blocking time, that is, the duration of signal disappearance, is t1. From C2 to C1, the unblocked time, that is, the duration of signal existence, is t2.

[0073] From the geometric relationship, the curvature of the shading arc of the silicon wafer is 2π·t1 / (t1+t2). Therefore, the actual offset distance of the center of the silicon wafer is O1O2=d·|cos(π·t1 / (t1+t2))|.

[0074] According to the solution of the embodiment of the present disclosure, the offset distance between the center of the silicon wafer and the rotation center can be determined by the length of time when the light source of the first optical sensor is blocked and unblocked.

[0075] In a possible implementation, step S3-2: determining the deflection angle between the center of the silicon wafer and the center of rotation according to the number of times the optical signal of the second optical sensor disappears during the rotation process, further includes:

[0076] From the time when the optical signal of the first optical sensor is blocked and disappears for the first time, the number of times the optical signal of the second optical sensor is blocked and disappears during the rotation process is counted until the silicon wafer stops rotating, and the number of times the signal disappears is obtained.

[0077] The angle of the last rotation is determined based on the number of times the signal disappears and the number of light-shielding structures of the rotating disk.

[0078] The deflection angle between the center of the silicon wafer and the rotation center of the rotating disk is determined based on the initial angle of the silicon wafer and the angle of the last rotation.

[0079] In the present disclosure, reference is still made to Figure 3 As shown, O1 is the origin of the coordinate system, the horizontal right direction is the positive direction of the x-axis, and the vertical upward direction is the positive direction of the y-axis. The number of light-shielding structures of the rotating disk is n. When the optical sensor A1 blocks the light for the first time, the optical sensor A2 starts counting from 0. When the silicon wafer stops rotating, the total count is n1. The remainder of n1 / n is n2, which is the number of light-shielding structures passed by the last rotation. From this, the angle of the last rotation can be obtained, which is 2π·n2 / n. The initial angle refers to the angle of the center point O2 of the silicon wafer when counting starts. The initial angle can be determined based on the angle of the optical sensor A1 relative to O1 and the radian of the blocking arc C1C2. The angle of the optical sensor A1 relative to O1 is a known parameter when setting the optical sensor A1. When counting starts, the blocking arc C1 has just reached A1. At this time, the angle between the center point O2 of the silicon wafer and the optical sensor A1 is half the radian of the blocking arc C1C2, which is π·t1 / (t1+t2). If the position of the optical sensor A1 is 0°. At this time, there are two cases of the deflection angle between the center of the silicon wafer and the rotation center of the rotating disk, namely, π·t1 / (t1+t2)≤2π·n2 / n or π·t1 / (t1+t2)>2π·n2 / n.

[0080] According to two different situations, step S3-3: the specific method of determining the offset coordinates of the center of the silicon wafer according to the offset distance and the deflection angle is divided into:

[0081] If π·t1 / (t1+t2)≤2π·n2 / n, the coordinates (x1, y1) of the actual silicon wafer when it stops are:

[0082] (-d·|cos(π·t1 / (t1+t2))|·sin(2π·n2 / n-π·t1 / (t1+t2)),d·|cos(π·t1 / (t1+t2))|·cos(2π·n2 / n-π·t1 / (t1+t2)));

[0083] If π·t1 / (t1+t2)>2π·n2 / n, the actual coordinates (x1, y1) of the silicon wafer when it stops are: (d·|cos(π·t1 / (t1+t2))|·sin(2π·n2 / n-π·t1 / (t1+t2)),d·|cos(π·t1 / (t1+t2))|·cos(2π·n2 / n-π·t1 / (t1+t2))).

[0084] According to the solution of the embodiment of the present disclosure, by setting multiple shading structures on the edge of the rotating disk and using the second optical sensor to illuminate the shading structure, the rotation angle of the silicon wafer can be measured, and the offset coordinates of the center of the silicon wafer can be further calculated in combination with the data of the first optical sensor.

[0085] In a possible implementation, the threshold is determined according to the following steps:

[0086] The maximum centrifugal distance of the silicon wafer is determined based on the friction coefficient and the target angular velocity of the silicon wafer.

[0087] According to the preset safety factor, target angular velocity and maximum eccentric distance, the longest allowable occlusion time is determined as the threshold.

[0088] In the embodiment of the present disclosure, the mass of the silicon wafer is m, the friction coefficient on the rotating disk is f, and the friction force is F f =m·g·f, the target angular velocity of the silicon wafer under the actual processing technology is ω, and the safety factor is α. The maximum eccentric distance of the silicon wafer, that is, the maximum distance that the center of the silicon wafer deviates from the rotation center is d max = g·f / (ω 2 ), the maximum allowable occlusion time of optical sensor A1 T1=α·arccos(g·f / (ω 2 ·d)) / ω. The safety factor can be any value not less than 1, such as 1.1, 1.2, 1.5, 1.8, 2, 2.5...

[0089] According to the solution of the embodiment of the present disclosure, by calculating the longest allowed occlusion time in advance as a threshold, it is possible to directly determine whether the degree of deviation of the center of the silicon wafer from the rotation center meets the requirements during operation through the measurement results of the first optical sensor.

[0090] In a possible implementation, the silicon wafer positioning calibration method of the embodiment of the present disclosure further includes the steps of:

[0091] Determine the comprehensive error of the robot arm transmission system based on the multi-wheel offset coordinates of the silicon wafer;

[0092] According to the comprehensive errors corresponding to multiple groups of silicon wafers, the preset movement route of the robot arm is optimized so that the initial position of the silicon wafer placed on the rotating disk is close to the theoretical position of the silicon wafer.

[0093] In the embodiment of the present disclosure, after the first silicon wafer performs the above steps S2 to S4 for the first time, the initial adjustment of the position is completed. In order to overcome the error of the transmission system, Figure 4 As shown, it may also be necessary to perform multiple rounds of operation steps to achieve precise adjustment. That is to say, the first round of executing the above steps can achieve preliminary adjustment of the position, and subsequent multiple rounds of operation can achieve precise adjustment. In each round of operation after the first round of operation, it still rotates at the preset speed until the single silicon wafer meets the use requirements. Relative to the theoretical silicon wafer origin, the accumulated actual coordinates of the silicon wafer at this time are: (X1, Y1) = (x1 + x2 ... xi, y1 + y2 ... yi), and the comprehensive error of the transmission system is (△x1, △y1) = (x2 ... xi, y2 ... yi). The comprehensive error of the transmission system does not take into account the offset coordinates during the preliminary adjustment.

[0094] After a silicon wafer is precisely adjusted, multiple silicon wafers can be tested in the same way. First, the silicon wafer is moved to the target position determined by the first silicon wafer, that is, (X1, Y1), and multiple rounds of steps S2 to S4 are performed to obtain multiple sets of comprehensive errors. Taking a total of 25 silicon wafers as an example, statistics are calculated for (△x2, △y2)...(△x25, △y25). After statistics, the two largest data sets are removed, the two smallest data sets are removed, and the other 21 data sets are averaged to obtain (△x, △y). The subsequent manipulator moves the silicon wafer to (X1+△x, Y1+△y), which is the optimal position for the manipulator to move. The preset motion route of the manipulator is optimized with this optimal position.

[0095] Through three-dimensional modeling simulation calculations, the movement route of the robotic arm is planned, so that the robotic arm can grab the silicon wafer and move it to the rapid thermal processing chamber, and achieve precise positioning without human intervention.

[0096] According to the solution of the embodiment of the present disclosure, the offset coordinates generated by multiple groups of silicon wafers in multiple rounds of fine-tuning are accumulated to calculate the average values ​​of the multiple groups of data as the comprehensive error of the transmission system.

[0097] In a possible implementation, the preset speed is one quarter of the working speed.

[0098] In the embodiment of the present disclosure, the preset speed may be any value between 20% and 80% of the target operating speed of the actual process, such as 25%, 40%, 50%, 60%, etc.

[0099] Figure 5 This is a schematic diagram of the structure of a silicon wafer positioning and calibration device provided by an embodiment of the present disclosure. Figure 5 As shown, the device comprises:

[0100] The transmission control module 501 is used to execute step S1: control the robot arm to grab the silicon wafer and place the silicon wafer on the rotating disk according to a preset movement route;

[0101] The chamber control module 502 is used to execute step S2: drive the rotating disk to rotate the silicon wafer at a preset speed, and transmit and receive optical signals through the first optical sensor and the second optical sensor; wherein the first optical sensor is arranged at the edge of the theoretical position of the silicon wafer; the second optical sensor is arranged at the edge of the rotating disk, and the edge of the rotating disk has a light shielding structure that intermittently transmits light during rotation;

[0102] The coordinate calculation module 503 is used to execute step S3: when the signal disappearance time length of the optical signal of the first optical sensor during the rotation process is greater than a threshold value, determine the offset coordinates of the center of the silicon wafer according to the optical signals of the first optical sensor and the second optical sensor; wherein the rotation center of the rotating disk is the coordinate origin;

[0103] The adjustment module 504 is used to execute step S4: adjusting the position of the silicon wafer using a robotic arm according to the offset coordinates;

[0104] The loop module 505 is used to return to execute step S2 until the signal disappears for a duration not greater than a threshold.

[0105] In a possible implementation, the coordinate calculation module 503 is used to:

[0106] When the signal disappearance time of the optical signal of the first optical sensor during the rotation process is greater than a threshold, the offset distance between the center of the silicon wafer and the rotation center is determined according to the signal disappearance time and the signal existence time, wherein the optical signal of the first optical sensor disappears due to being blocked by a portion of the silicon wafer that exceeds a theoretical position of the silicon wafer.

[0107] The deflection angle between the center of the silicon wafer and the center of rotation is determined according to the number of times the optical signal of the second optical sensor disappears during the rotation process, wherein the optical signal of the second optical sensor disappears due to being blocked by the light shielding structure.

[0108] According to the offset distance and the deflection angle, the offset coordinates of the center of the silicon wafer are determined.

[0109] In a possible implementation, the coordinate calculation module 503 is used to:

[0110] The arc of the blocking arc is determined according to the disappearance time of the blocked signal of the first optical sensor and the existence time of the unblocked signal. The blocking arc is the part of the silicon wafer that exceeds the theoretical position of the silicon wafer.

[0111] The offset distance between the center of the silicon wafer and the rotation center of the rotating disk is determined according to the curvature of the shielding arc and the diameter of the silicon wafer.

[0112] In a possible implementation, the coordinate calculation module 503 is used to:

[0113] From the time when the optical signal of the first optical sensor is blocked and disappears for the first time, the number of times the optical signal of the second optical sensor is blocked and disappears during the rotation process is counted until the silicon wafer stops rotating, and the number of times the signal disappears is obtained.

[0114] The angle of the last rotation is determined based on the number of times the signal disappears and the number of light-shielding structures of the rotating disk.

[0115] The deflection angle between the center of the silicon wafer and the rotation center of the rotating disk is determined based on the initial angle of the silicon wafer and the angle of the last rotation.

[0116] In a possible implementation, the threshold is determined according to the following steps:

[0117] The maximum centrifugal distance of the silicon wafer is determined based on the friction coefficient and the target angular velocity of the silicon wafer.

[0118] According to the preset safety factor, target angular velocity and maximum eccentric distance, the longest allowable occlusion time is determined as the threshold.

[0119] In a possible implementation, the silicon wafer positioning calibration device of the embodiment of the present disclosure further includes an optimization module, which is used to:

[0120] Determining a comprehensive error of the robot arm transmission system according to the multi-wheel offset coordinates of the silicon wafer;

[0121] According to the comprehensive errors corresponding to the multiple groups of silicon wafers, the preset movement route of the robot arm is optimized so that the initial position of the silicon wafer placed on the rotating disk approaches the theoretical position of the silicon wafer.

[0122] In a possible implementation, the preset speed is one quarter of the working speed.

[0123] For the description of specific functions and examples of each module and submodule of the device in the embodiment of the present disclosure, reference can be made to the relevant description of the corresponding steps in the above method embodiment, which will not be repeated here.

[0124] Figure 6 FIG. 1 is a structural block diagram of an electronic device according to an embodiment of the present disclosure. Figure 6As shown, the electronic device includes: a memory 610 and a processor 620, and the memory 610 stores a computer program that can be run on the processor 620. The number of the memory 610 and the processor 620 can be one or more. The memory 610 can store one or more computer programs. When the one or more computer programs are executed by the electronic device, the electronic device executes the method provided by the above method embodiment. The electronic device may also include: a communication interface 630, which is used to communicate with external devices and perform data exchange transmission.

[0125] If the memory 610, the processor 620 and the communication interface 630 are implemented independently, the memory 610, the processor 620 and the communication interface 630 can be connected to each other through a bus and communicate with each other. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus. The bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 6 Only one thick line is used in the diagram, but this does not mean that there is only one bus or only one type of bus.

[0126] Optionally, in a specific implementation, if the memory 610, the processor 620 and the communication interface 630 are integrated on a chip, the memory 610, the processor 620 and the communication interface 630 can communicate with each other through an internal interface.

[0127] It should be understood that the processor may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor, etc. It is worth noting that the processor may be a processor supporting the Advanced RISC Machines (ARM) architecture.

[0128] Further, optionally, the above-mentioned memory may include a read-only memory and a random access memory, and may also include a non-volatile random access memory. The memory may be a volatile memory or a non-volatile memory, or may include both volatile and non-volatile memories. Among them, the non-volatile memory may include a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. The volatile memory may include a random access memory (RAM), which is used as an external cache. By way of example but not limitation, many forms of RAM are available. For example, static random access memory (SRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDR SDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM) and direct memory bus random access memory (DR RAM).

[0129] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer instructions are loaded and executed on a computer, the process or function described in the embodiment of the present disclosure is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network or other programmable device. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from a website site, computer, server or data center by wired (for example: coaxial cable, optical fiber, data subscriber line (Digital Subscriber Line, DSL)) or wireless (for example: infrared, Bluetooth, microwave, etc.) mode to another website site, computer, server or data center. The computer-readable storage medium can be any available medium that a computer can access, or a data storage device such as a server or data center that includes one or more available media integrations. The available medium may be a magnetic medium (e.g., a floppy disk, a hard disk, a magnetic tape), an optical medium (e.g., a digital versatile disc (DVD)), or a semiconductor medium (e.g., a solid state disk (SSD)), etc. It is worth noting that the computer-readable storage medium mentioned in the present disclosure may be a non-volatile storage medium, in other words, a non-transient storage medium.

[0130] A person skilled in the art will understand that all or part of the steps to implement the above embodiments may be accomplished by hardware or by instructing related hardware through a program, and the program may be stored in a computer-readable storage medium, and the above-mentioned storage medium may be a read-only memory, a disk or an optical disk, etc.

[0131] In the description of the embodiments of the present disclosure, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0132] In the description of the embodiments of the present disclosure, unless otherwise specified, " / " means or, for example, A / B can mean A or B. "And / or" in this article is only a way to describe the association relationship of associated objects, indicating that there can be three relationships, for example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone.

[0133] In the description of the embodiments of the present disclosure, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0134] The above description is only an exemplary embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A method for positioning and calibrating a silicon wafer, comprising: S1, controlling the robot arm to grab the silicon wafer and place the silicon wafer on the rotating disk according to a preset movement route; S2, driving the rotating disk to rotate the silicon wafer at a preset speed, and transmitting and receiving optical signals through a first optical sensor and a second optical sensor; wherein the first optical sensor is arranged at the edge of the theoretical position of the silicon wafer; the second optical sensor is arranged at the edge of the rotating disk, and the edge of the rotating disk has a light-shielding structure that intermittently transmits light during rotation; S3, when the signal disappearance time length of the optical signal of the first optical sensor during the rotation process is greater than a threshold, determining the offset coordinates of the center of the silicon wafer according to the optical signals of the first optical sensor and the second optical sensor; wherein the rotation center of the rotating disk is the coordinate origin; S4. According to the offset coordinates, the position of the silicon wafer is adjusted using the robotic arm; after the adjustment is completed, the process returns to step S2 until the signal disappears for a duration no longer than the threshold.

2. The method according to claim 1, wherein: When the optical signal of the first optical sensor disappears for a time period greater than a threshold value during the rotation process, determining the offset coordinates of the center of the silicon wafer according to the optical signals of the first optical sensor and the second optical sensor includes: When the signal disappearance duration of the optical signal of the first optical sensor during the rotation process is greater than a threshold, determining the offset distance between the center of the silicon wafer and the rotation center according to the signal disappearance duration and the signal existence duration; wherein the optical signal of the first optical sensor disappears due to being blocked by a portion of the silicon wafer that exceeds a theoretical position of the silicon wafer; Determine the deflection angle between the center of the silicon wafer and the center of rotation according to the number of times the optical signal of the second optical sensor disappears during the rotation process; wherein the optical signal of the second optical sensor disappears due to being blocked by the light shielding structure; The offset coordinates of the center of the silicon wafer are determined according to the offset distance and the deflection angle.

3. The method according to claim 2, wherein: Determining the offset distance between the center of the silicon wafer and the rotation center according to the signal disappearance duration and the signal existence duration includes: Determine the curvature of the blocking arc according to the disappearance time of the blocked signal and the existence time of the unblocked signal of the optical signal of the first optical sensor; the blocking arc is the portion of the silicon wafer that exceeds the theoretical position of the silicon wafer; The offset distance between the center of the silicon wafer and the rotation center of the rotating disk is determined according to the curvature of the shielding arc and the diameter of the silicon wafer.

4. The method according to claim 2, wherein: Determining the deflection angle between the center of the silicon wafer and the rotation center according to the number of times the optical signal of the second optical sensor disappears during the rotation process includes: Starting from the time when the optical signal of the first optical sensor is blocked and disappears for the first time, the number of times the optical signal of the second optical sensor is blocked and disappears during the rotation process is counted until the silicon wafer stops rotating, thereby obtaining the number of times the signal disappears; Determining the angle of the last rotation according to the number of times the signal disappears and the number of light shielding structures of the rotating disk; The deflection angle between the center of the silicon wafer and the rotation center of the rotating disk is determined according to the initial angle of the silicon wafer and the angle of the last rotation.

5. The method according to claim 1, wherein: The threshold is determined according to the following steps: Determine the maximum centrifugal distance of the silicon wafer according to the friction coefficient and the target angular velocity of the silicon wafer; According to the preset safety factor, the target angular velocity and the maximum eccentric distance, the longest allowable occlusion time is determined as the threshold.

6. The method according to claim 1, further comprising: Determining a comprehensive error of a transmission system of the robotic arm according to the multi-wheel offset coordinates of the silicon wafer; According to the comprehensive errors corresponding to the multiple groups of silicon wafers, the preset movement route of the robot arm is optimized so that the initial position of the silicon wafer placed on the rotating disk approaches the theoretical position of the silicon wafer.

7. The method according to claim 1, wherein: include: The preset speed is one quarter of the working speed.

8. A silicon wafer positioning and calibration device, comprising: The transmission control module is used to execute step S1: control the robot arm to grab the silicon wafer and place the silicon wafer on the rotating disk according to a preset movement route; The chamber control module is used to execute step S2: drive the rotating disk to rotate the silicon wafer at a preset speed, and transmit and receive optical signals through a first optical sensor and a second optical sensor; wherein the first optical sensor is arranged at the edge of the theoretical position of the silicon wafer; the second optical sensor is arranged at the edge of the rotating disk, and the edge of the rotating disk has a light shielding structure that intermittently transmits light during rotation; A coordinate calculation module, configured to execute step S3: when the optical signal of the first optical sensor disappears for a time period greater than a threshold during the rotation process, determine the offset coordinates of the center of the silicon wafer according to the optical signals of the first optical sensor and the second optical sensor; wherein the rotation center of the rotating disk is the coordinate origin; An adjustment module, configured to execute step S4: adjusting the position of the silicon wafer using the robotic arm according to the offset coordinates; The loop module is used to return to execute step S2 until the signal disappears for a duration not greater than the threshold.

9. A silicon wafer position adjustment system, comprising: A heat treatment chamber, comprising a rotating disk and a heating assembly, wherein the rotating disk is used to drive the silicon wafer to rotate, and the rotating disk supports the silicon wafer through supporting pins; A mechanical arm is arranged outside the chamber and is used to move and adjust the position of the silicon wafer; The lower end surface of the heat treatment chamber is provided with a first optical sensor transmitting end and a second optical sensor transmitting end, and the transmitting end is used to send out an optical signal; the upper end surface of the heat treatment chamber is provided with a first optical sensor receiving end and a second optical sensor receiving end, and the receiving end is used to receive the optical signal sent out by the corresponding transmitting end; Wherein, "the first optical sensor transmitting end and the first optical sensor receiving end are arranged at the edge of the theoretical position of the silicon wafer, the second optical sensor transmitting end and the second optical sensor receiving end are arranged at the edge of the rotating disk, and the edge of the rotating disk has a light shielding structure that intermittently transmits light during rotation.

10. An electronic device, comprising: at least one processor; as well as a memory communicatively connected to the at least one processor; wherein, The memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the method according to any one of claims 1 to 7.

11. A non-transitory computer-readable storage medium storing computer instructions, wherein: The computer instructions are used to cause the computer to execute the method according to any one of claims 1-7.

12. A computer program product, comprising a computer program, which, when executed by a processor, implements the method according to any one of claims 1 to 7.

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